TW201202272A - Radiation-sensitive resin composition - Google Patents
Radiation-sensitive resin composition Download PDFInfo
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- TW201202272A TW201202272A TW100109132A TW100109132A TW201202272A TW 201202272 A TW201202272 A TW 201202272A TW 100109132 A TW100109132 A TW 100109132A TW 100109132 A TW100109132 A TW 100109132A TW 201202272 A TW201202272 A TW 201202272A
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- XEIDQXWUPWWQEU-UHFFFAOYSA-N CC(c1ccccc1)S(c1ccccc1)c(cc1)ccc1OS(c1ccc(C)cc1)(=O)=O Chemical compound CC(c1ccccc1)S(c1ccccc1)c(cc1)ccc1OS(c1ccc(C)cc1)(=O)=O XEIDQXWUPWWQEU-UHFFFAOYSA-N 0.000 description 1
- IQHGVLOVYSNZPT-UHFFFAOYSA-N CS(Oc(cc1)ccc1S(c1ccccc1)c1ccccc1)(=O)=O Chemical compound CS(Oc(cc1)ccc1S(c1ccccc1)c1ccccc1)(=O)=O IQHGVLOVYSNZPT-UHFFFAOYSA-N 0.000 description 1
- JLJIQUNXBZIXBH-UHFFFAOYSA-N O=S(C(F)(F)F)(Oc(cc1)ccc1S(c1ccccc1)c1ccccc1)=O Chemical compound O=S(C(F)(F)F)(Oc(cc1)ccc1S(c1ccccc1)c1ccccc1)=O JLJIQUNXBZIXBH-UHFFFAOYSA-N 0.000 description 1
- MJKSMEWHDQXHQW-UHFFFAOYSA-N O=S(C1CCCCC1)(c(cc1)ccc1Sc1ccccc1)=O Chemical compound O=S(C1CCCCC1)(c(cc1)ccc1Sc1ccccc1)=O MJKSMEWHDQXHQW-UHFFFAOYSA-N 0.000 description 1
- NYRGPJNHQQQXJA-UHFFFAOYSA-N O=S(c1ccccc1)(c(cc1)ccc1S(c1ccccc1)c1ccccc1)=O Chemical compound O=S(c1ccccc1)(c(cc1)ccc1S(c1ccccc1)c1ccccc1)=O NYRGPJNHQQQXJA-UHFFFAOYSA-N 0.000 description 1
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/38—Esters containing sulfur
- C08F220/382—Esters containing sulfur and containing oxygen, e.g. 2-sulfoethyl (meth)acrylate
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
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- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Materials For Photolithography (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
Abstract
Description
201202272 六、發明說明: 【發明所屬之技術領域】 本發明係關於一種使用於1C等半導體製造步 晶、熱感頭等回路基板的製造、其他光蝕刻步驟的 線性樹脂組成物。 【先前技術】 化學增幅型敏輻射線性樹脂組成物係藉由代表 分子雷射或ArF準分子雷射的遠紫外光等放射線照 光部生成酸,將該酸作爲觸媒而進行反應,改變曝 未曝光部對於顯像液之溶解速度,於基板上形成光 之組成物。 進行更爲精密之線幅控制時,例如裝置之設計 次半微米以下的情況時,化學增幅型阻抗不僅解像 良,光阻圖型之線幅偏差指標之 LWR ( Line Roughness )亦小,且圖型形狀爲矩形成爲重要。 如此微細形狀,控制所生成之酸的擴散速度爲重要 達成此的方法,已知有於敏輻射線性樹脂組成物中 性化合物的技術正被檢討者,特別在曝光部因發生 解離並失去酸擴散控制性,而添加酸擴散控制劑時 高曝光部與未曝光部之對比(參照特公平2-27660 、特開2009-5 3 68 8號公報)。然而,即使使用該 LWR或圖型形狀等性能並尙未充分。 驟、液 敏輻射201202272 VI. Description of the Invention: [Technical Field] The present invention relates to a linear resin composition which is used in the manufacture of a circuit substrate such as a semiconductor such as 1C, a thermal sensing head, and the like, and other photo-etching steps. [Prior Art] The chemically amplified type sensitive radiation linear resin composition generates an acid by a radiation portion such as a far-ultraviolet light representing a molecular laser or an ArF excimer laser, reacts the acid as a catalyst, and changes the exposure. The exposure portion forms a composition of light on the substrate with respect to the dissolution rate of the developing solution. For more precise line width control, for example, when the design of the device is less than half a micron, the chemical amplification type impedance is not only good, but the LWR (Line Roughness) of the line deviation index of the photoresist pattern is also small, and the pattern is small. The shape of the rectangle becomes important. Such a fine shape, controlling the diffusion rate of the generated acid is an important method to achieve this, and it is known that a technique for forming a neutral compound in a sensitive linear resin is being reviewed, particularly in the exposure portion due to dissociation and loss of acid diffusion. Controllability, when the acid diffusion control agent is added, the high-exposure portion and the unexposed portion are compared (refer to Japanese Patent Publication No. Hei 2-27660, JP-A-2009-5 3 68 8). However, even if the LWR or the shape of the pattern is used, performance is not sufficient. Liquid, sensitive radiation
KrF準 射於曝 光部與 阻圖型 尺寸爲 性能優 Width 欲控制 。作爲 添加鹼 的酸而 ,可提 號公報 技術, 201202272 [先行技術文獻] [專利文獻] [專利文獻1]特公平2-27660號公報 [專利文獻2]特開2009-53688號公報 【發明內容】 發明所要解決之課題 本發明係以如以上之事項爲基礎所成者,該目的爲提 供一種LWR較小,且圖型形狀優良的可形成光阻圖型之 敏輻射線性樹脂組成物。 解決課題之手段 欲解決上述課題之發明爲, 一種敏輻射線性樹脂組成物,其爲含有〔A〕具有下 述式(〗)所示結構單位(I )之含有酸解離性基的聚合物 (以下亦稱爲「〔A〕聚合物」)、及 〔B〕下述式(2)所示化合物(以下亦稱爲「〔β〕 化合物」)》 【化1】 / R1、KrF is projected on the exposed part and the resistive type. The size is excellent. Width is to be controlled. In the case of the addition of a base acid, the technique of the invention is disclosed in Japanese Patent Application No. 2009-53688 [Patent Document 1] JP-A-2009-53688. OBJECTS TO BE SOLVED BY THE INVENTION The present invention has been made in view of the above matters, and an object thereof is to provide a radiation-sensitive linear resin composition capable of forming a photoresist pattern having a small LWR and excellent pattern shape. Means for Solving the Problem The invention of the above-mentioned problem is a sensitive radiation linear resin composition containing an acid dissociable group-containing polymer having the structural unit (I) represented by the following formula (I). Hereinafter, it is also referred to as "[A] polymer"), and [B] a compound represented by the following formula (2) (hereinafter also referred to as "[β] compound")" [Chemical Formula 1] / R1.
M+b I ONSHO η \ 1/ FI0 — F (式(1)中,R1爲氫原子、氟原子、三氟甲基或碳數i 〜3的烷基。E爲單鍵或-COO-。R2爲碳數1〜2〇的2價 201202272 烴基’該烴基之氫原子的一部份或全部可由氟原 ;η爲0〜5的整數;M +爲鎗陽離子) 【化2】 Υ—R3—X- Q+ (2) (式(2)中,Υ爲氫原子、羥基、丙烯醯基或 醯基;R3爲碳數1〜20的2價烴基或-R-Z-R,-; 獨立爲碳數1〜20的2價烴基;Ζ爲-Ο-、-CO 、-OCO-、-ΝΗ-、-NHCO-或-CONH- ; X 爲--SO /或-N_-S02-R”; R”爲碳數1〜20的1價烴基 的氫原子之一部份或全部可由氟原子所取代;又 彼此結合可形成環;Q +爲鑰陽離子) 本發明的敏輻射線性樹脂組成物爲含有具有 結構單位(I )及酸解離性基之〔A〕聚合物以及 特定結構之〔B〕化合物。〔A〕聚合物的結構| 爲藉由曝光會產生酸之單位,因此存在於聚合物 表現均質酸擴散,且由曝光部至未曝光部的酸擴 制。又,藉由〔B〕化合物,在曝光部有酸擴散 光部的酸擴散受到控制。 所謂該敏輻射線性樹脂組成物,可藉由該〔 物與〔B〕化合物之組合而使酸擴散受到高度控 果可形成LWR較小,且圖型形狀優良的光阻圖型 上述式(1 )中之M +係以選自下述式(3 ) (4)中各所示鑰陽離子所成群的至少1種鑰陽 子所取代 甲基丙烯 R及R’各 -、-C Ο 〇 -C00·、 ,該烴基 ,R 與 R, 上述特定 具有上述 ,位⑴ 中,故可 散得到控 ,在未曝 A〕聚合 制,其結 j 〇 及下述式 離子爲佳 201202272 【化3】 Ο)M+b I ONSHO η \ 1/ FI0 — F (In the formula (1), R1 is a hydrogen atom, a fluorine atom, a trifluoromethyl group or an alkyl group having a carbon number of i to 3. E is a single bond or -COO-. R2 is a divalent 201202272 hydrocarbon group having a carbon number of 1 to 2 Å. A part or all of the hydrogen atom of the hydrocarbon group may be a fluorine atom; η is an integer of 0 to 5; M + is a gun cation) [Chemical 2] Υ-R3 —X— Q+ (2) (In the formula (2), hydrazine is a hydrogen atom, a hydroxyl group, an acryl fluorenyl group or a fluorenyl group; R 3 is a divalent hydrocarbon group having a carbon number of 1 to 20 or -RZR,-; independently is a carbon number of 1 a divalent hydrocarbon group of -20; Ζ is -Ο-, -CO, -OCO-, -ΝΗ-, -NHCO- or -CONH-; X is --SO / or -N_-S02-R"; R" is One or all of the hydrogen atoms of the monovalent hydrocarbon group having 1 to 20 carbon atoms may be substituted by a fluorine atom; and combined with each other to form a ring; Q + is a key cation) The radiation sensitive linear resin composition of the present invention contains a structure The unit (I) and the acid-dissociable group [A] polymer and the compound of the specific structure [B]. [A] The structure of the polymer | is a unit which generates an acid by exposure, and therefore the polymer exhibits a homogeneous acid diffusion and is expanded by the acid from the exposed portion to the unexposed portion. Further, the acid diffusion of the acid-diffused light portion in the exposed portion is controlled by the compound [B]. The linear radiation resin composition of the sensitized radiation can be formed by the combination of the compound and the compound of [B], and the acid diffusion is highly controlled to form a photoresist pattern having a small LWR and an excellent shape of the pattern (1). M + is substituted with at least one type of key cation selected from the group consisting of the key cations shown in the following formulas (3) and (4), and the methacrylic acid R and R' each -, -C Ο 〇- C00·, , the hydrocarbon group, R and R, the above specific has the above-mentioned, in the position (1), so it can be controlled by dispersion, and is not exposed to A] polymerization, and the junction j 〇 and the following formula are good 201202272 [Chemical 3] Ο)
Fp R4b-S+~R4c (式(3 )中,R4a、R4b及.R4e各獨立爲碳數卜30的i 價烴基或核原子數4〜30的1價雜環基。但,上述烴基及 雜環基的氫原子之一部份或全部可被取代。又,R4a、R4b 及R4<:中任2個彼此結合’可與彼等所結合的硫原子共同 形成環狀結構。) 【化4】 R5a一丨+—R5b (4 ) (式(4)中,115:1及R5b各獨立爲碳數1〜30的1價烴基 或核原子數4〜30的1價雜環基;但,上述烴基及雜環基 的氣原子之一部份或全部可被取代。又,R5a及R5b爲彼 此結合,可與彼等所結合的碘原子共同形成環狀結構) 上述〔A〕聚合物中之M +所示鑰陽離子因具有上述特 定結構,可提高該敏輻射線性樹脂組成物之感度,作爲結 果,所得之光阻圖型的LWR更受到抑制,且圖型形狀更 爲優良。 〔B〕化合物係爲選自下述式(2-1)〜(2-6)中各 所示化合物所成群的至少1種化合物爲佳。 -8 - 201202272 【化5】Fp R4b-S+~R4c (In the formula (3), R4a, R4b and .R4e are each independently an i-valent hydrocarbon group having a carbon number of 30 or a monovalent heterocyclic group having a nuclear number of 4 to 30. However, the above hydrocarbon group and hetero One or all of the hydrogen atoms of the ring group may be substituted. Further, any two of R4a, R4b and R4<: are bonded to each other to form a cyclic structure together with the sulfur atom to which they are bonded.) R5a-丨+-R5b (4) (In the formula (4), 115:1 and R5b are each independently a monovalent hydrocarbon group having 1 to 30 carbon atoms or a monovalent heterocyclic group having 4 to 30 carbon atoms; One or all of the gas atoms of the above hydrocarbon group and the heterocyclic group may be substituted. Further, R5a and R5b are bonded to each other, and may form a cyclic structure together with the iodine atom to which they are bonded) in the above [A] polymer Since the key cation of M + has the specific structure described above, the sensitivity of the linear radiation resin composition can be improved, and as a result, the LWR of the obtained photoresist pattern is more suppressed, and the pattern shape is more excellent. The compound [B] is preferably at least one compound selected from the group consisting of the compounds represented by the following formulas (2-1) to (2-6). -8 - 201202272 【化5】
.OH.OH
Oc〇〇-Q+ (2-1) (2-2) 〇人0 〇人。 | 〇人。 I 1 R7 R7 | Ν' Q+ | S03_ Q+ R6 Ν' Q+Oc〇〇-Q+ (2-1) (2-2) 〇人0 〇人. | Deaf. I 1 R7 R7 | Ν' Q+ | S03_ Q+ R6 Ν' Q+
I o=s=oI o=s=o
I cf3 (2-3) o=s=o I cf3 (2-4) ,COO· Q+ (2-5) (2-6) (式(2-1)〜(2-6)中,R6爲碳數1〜6的1價鏈狀烴 基。R7各獨立爲碳數1〜6的2價鏈狀烴基。Q +的定義與 上述式(2 )相同。) 〔B〕化合物因具有上述特定結構,可提高酸擴散控 制性。該結果爲由該敏輻射線性樹脂組成物所形成之光阻 圖型的LWR受到進一步的抑制,且圖型形狀更優良。 〔A〕聚合物爲進一步具有下述式(5)所示結構單 位(Π)時爲佳。 -9 - (5) (5)201202272 【化6】I cf3 (2-3) o=s=o I cf3 (2-4) , COO· Q+ (2-5) (2-6) (in equations (2-1) to (2-6), R6 is a monovalent chain hydrocarbon group having 1 to 6 carbon atoms. Each of R7 is independently a divalent chain hydrocarbon group having 1 to 6 carbon atoms. The definition of Q + is the same as the above formula (2).) The compound [B] has the above specific structure. It can improve acid diffusion control. As a result, the LWR of the resist pattern formed by the sensitive radiation linear resin composition is further suppressed, and the pattern shape is more excellent. The polymer [A] is preferably a structure having a structural unit represented by the following formula (5). -9 - (5) (5)201202272 [Chem. 6]
(式(5)中’R1的定義與上述式(1)相同。R8、r9及 R1Q各獨立爲碳數1〜4的烷基或碳數4〜20的環烷基。但 ’ R9及R1()爲彼此結合,可與彼等所結合之碳原子共同形 成碳數4〜20的環鏈烷二基。) 〔A〕聚合物進一步具有作爲酸解離性基之結構單位 (Π )時’可提高酸解離容易性。該結果由該敏輻射線性 樹脂組成物所得之光阻圖型的LWR可進一步受到抑制, 且圖型形狀更優良。 [發明的效果] 所謂本發明的敏輻射線性樹脂組成物爲,可形成 LWR較小,且圖型形狀優良的光阻圖型。 實施發明的形態 <敏輻射線性樹脂組成物> 本發明的敏輻射線性樹脂組成物含有〔A〕聚合物及 〔B〕化合物。又’以不損害本發明的效果之範圍下,可 含有任意成分。以下對於各構成成分做說明。 201202272 <〔A〕聚合物> 〔A〕聚合物爲具有結構單位(I )之含有酸解離性基 的聚合物。結構單位(I)爲藉由曝光而分解,並產生酸 之單位,但藉由此存在於〔A〕聚合物中,可表現均質酸 擴散,且由曝光部至未曝光部的酸之擴散受到控制。又, 〔A〕聚合物爲顯示鹼不溶性或鹼難溶性之聚合物,具有 藉由酸之作用可脫離的保護基(酸解離性基),藉由酸之 作用脫離該保護基而顯示鹼可溶性。〔A〕聚合物可具有 1種或2種以上的酸解離性基。作爲具有酸解離性基之結 構單位,雖無特別限定,可舉出後述結構單位(II )的較 佳例子。 〔結構單位(I )〕 結構單位(I )爲上述式(1 )所示結構單位。上述式 (1)中,R1爲氫原子、氟原子、三氟甲基或碳數1〜3 的烷基爲單鍵或-(:00-。112爲碳數1〜20的2價烴基 ,該烴基之氫原子的一部份或全部可由氟原子所取代。N 爲0〜5的整數。M +爲鑰陽離子。 作爲上述R1所示碳數1〜3的烷基,例如可舉出甲基 、乙基、η-丙基等。其中以氫原子或甲基爲佳。 作爲上述R2所示碳數1〜2 0的2價烴基。例如可舉 出伸甲基、伸乙基、η-伸丙基、η-伸丁基、η-伸戊基等鏈 狀烴基;自環戊烷、環己烷、二環戊烷、三環癸烷、四環 十二烷、金剛烷等脂環式烴除去2個氫原子之2價脂環式 -11 - 201202272 烴基;一部份具有該脂環式烴基之2價烴基;伸苯基、伸 萘基、伸聯苯基等芳香族烴基;一部份具有芳香環之2價 烴基等。上述2價烴基爲氫原子的一部份或全部可由氟所 取代。作爲η,較佳爲1〜4。 作爲式(1 )中-R2-(CF2)n-所示結構中較佳者,可舉 tB-cf2-cf2-' -chf-cf2-' -cf2-cf2-cf2-' -CF2-CF2-CF2-CF2- ' -CH2-CH2-CF2-CF2- ' -CH2*CH2'CH2~CF2_CF2· ' -CH2-CH2'CH2_CH2_CF2'CF2_ ' -CH2_CH2~CH2_CH2_CH2_CF2-CF2- 、 -CH2-CH2-CHF-CF2- ' -CH2-CH2-CH2-CHF-CF2- ' -CH2-CH2-CH2-CH2-CHF-CF2- ' -CH2-CH2-CH2-CH2-CH2-CHF-CF2-、-CH2-CF2-、 -CH2-CH2-CF2- ' -CH2-CH2-CH2-CF2- ' -CH2-CH2-CH2-CH2-CF2- » 作爲上述M +所示鑰陽離子,以鎏陽離子、碘鐵陽離 子爲佳,以選自上述式(3)所示鐵陽離子(鎏陽離子) 及上述式(4)所示鑰陽離子(碘鑰陽離子)所成群之至 少1種鑰陽離子爲較佳。 上述式(3)中,R4a、1141)及R4e各獨立爲碳數1〜30 的1價烴基或核原子數4〜30的1價雜環基。但,上述烴 基及雜環基的氫原子之一部份或全部可被取代。又,R4a 、R4b及R4e中任2個彼此結合,可與彼等所結合的硫原 子共同形成環狀結構。 上述式(4)中,尺53及R5b各獨立爲碳數1〜3〇的1 -12- 201202272 價烴基或核原子數4〜30的1價雜環基。但, 雜環基的氫原子之一部份或全部可被取代。 R5 b爲彼此結合,可與彼等所結合的碘原子共 結構。 作爲上述式(3 )中之R4a、R4b及R4C以石 )中之R5a及R5b所示碳數1〜30的烴基,例 基、乙基、η-丙基、n-伸丁基、心伸戊基等1 ;環丁基、環戊基、環己基、二環戊烷基、三 環十二烷基、金剛烷基等1價脂環式烴基;一 述脂環式烴基之1價烴基;苯基、萘基、蒽基 〇 -甲苯基、m -甲苯基、ρ -甲苯基、ρ_羥基苯基 苯基、均三甲苯、〇 -枯烯基、2,3 -二甲苯基、 基、2,5-二甲苯基、2,6-二甲苯基、3,4-二甲苯 甲苯基、ρ -氟苯基、p -二氟甲基苯基、p -氯苯 基、Ρ-碘苯基等可被取代之1價芳香族烴基; 上述芳香族烴基之1價烴基等。 作爲上述式(3 )中之R4a、R4b及R4e以石 )中之R5a及R5b所示核原子數4〜30的1價 如可舉出呋喃基、噻嗯基、吡喃基、吡咯基、 唑基、異噻唑基、異噁唑基、吡嗪基、嘧啶基 四氫吡喃基、四氫呋喃基、四氫硫吡喃基、四 、3 -四氫噻吩-1,1-二氧化物基等。 作爲具有上述烴基及雜環基之取代基,以 羥基、羧基、氰基、硝基、鹵素化烴基、烷氧 上述烴基及 又,R5a及 同形成環狀 k上述式(4 如可舉出甲 價鏈狀烴基 環癸基、四 部份具有上 、聯苯基、 、P-甲氧基 2,4-二甲苯 基、3,5-二 基、P-溴苯 一部份具有 I上述式(4 雜環基,例 噻蒽基、吡 、噠嗪基、 氫硫呋喃基 鹵素原子、 基、胺基、 -13- 201202272 硫醇基爲佳。 作爲上述式(3)所示鎏陽離子,例如可舉出下述式 (i-Ι)〜(i-27)所示陽離子等。又,作爲上述式(4) 所示碘鎰陽離子,例如可舉出下述式(ii-Ι )〜(ii-25 ) 所示陽離子等。 【化7】(In the formula (5), the definition of 'R1 is the same as the above formula (1). R8, r9 and R1Q are each independently an alkyl group having 1 to 4 carbon atoms or a cycloalkyl group having 4 to 20 carbon atoms. However, 'R9 and R1' () in order to combine with each other, together with the carbon atoms to which they are combined, form a cycloalkanediyl group having a carbon number of 4 to 20.) [A] The polymer further has a structural unit (Π) as an acid dissociable group. It can improve the ease of acid dissociation. As a result, the LWR of the photoresist pattern obtained from the radiation-sensitive linear resin composition can be further suppressed, and the pattern shape is more excellent. [Effects of the Invention] The radiation sensitive linear resin composition of the present invention has a resist pattern which is small in LWR and excellent in shape. [Form of the Invention] <The radiation sensitive linear resin composition> The radiation sensitive linear resin composition of the present invention contains the [A] polymer and the compound [B]. Further, any component may be contained in a range that does not impair the effects of the present invention. The respective constituents will be described below. 201202272 <[A] Polymer> The polymer [A] is a polymer having an acid dissociable group having a structural unit (I). The structural unit (I) is a unit which decomposes by exposure and generates an acid, but by being present in the polymer [A], homogeneous acid diffusion can be exhibited, and the diffusion of acid from the exposed portion to the unexposed portion is affected. control. Further, the polymer [A] is a polymer which exhibits an alkali-insoluble or alkali-insoluble property, and has a protective group (acid-dissociable group) which can be detached by the action of an acid, and exhibits alkali solubility by removing the protecting group by the action of an acid. . [A] The polymer may have one or more acid dissociable groups. The structural unit having an acid-dissociable group is not particularly limited, and a preferred example of the structural unit (II) described later can be mentioned. [Structural unit (I)] The structural unit (I) is a structural unit represented by the above formula (1). In the above formula (1), R1 is a hydrogen atom, a fluorine atom, a trifluoromethyl group or an alkyl group having 1 to 3 carbon atoms is a single bond or -(:00-.112 is a divalent hydrocarbon group having 1 to 20 carbon atoms; A part or all of the hydrogen atom of the hydrocarbon group may be substituted by a fluorine atom. N is an integer of 0 to 5. M + is a key cation. The alkyl group having 1 to 3 carbon atoms represented by the above R 1 may, for example, be a A hydrogen atom or a methyl group is preferable. The divalent hydrocarbon group having 1 to 20 carbon atoms represented by the above R 2 may, for example, be a methyl group, an ethyl group or a methyl group. - a chain hydrocarbon group such as a propyl group, a η-butylene group, or a η-amyl pentyl group; a fat such as a cyclopentane, a cyclohexane, a dicyclopentane, a tricyclodecane, a tetracyclododecane or an adamantane; a cyclic hydrocarbon to remove two hydrogen atoms of a divalent alicyclic -11 - 201202272 hydrocarbon group; a part of a divalent hydrocarbon group having the alicyclic hydrocarbon group; an aromatic hydrocarbon group such as a phenyl group, a naphthyl group or a phenylene group a part of a divalent hydrocarbon group having an aromatic ring, etc. The above-mentioned divalent hydrocarbon group may be partially or wholly substituted by fluorine, and as η, preferably 1 to 4. As a formula (1), -R2- Preferred among the structures shown by (CF2)n- tB-cf2-cf2-' -chf-cf2-' -cf2-cf2-cf2-' -CF2-CF2-CF2-CF2- ' -CH2-CH2-CF2-CF2- ' -CH2*CH2'CH2~ CF2_CF2· ' -CH2-CH2'CH2_CH2_CF2'CF2_ ' -CH2_CH2~CH2_CH2_CH2_CF2-CF2-, -CH2-CH2-CHF-CF2- '-CH2-CH2-CH2-CHF-CF2- '-CH2-CH2-CH2-CH2 -CHF-CF2- '-CH2-CH2-CH2-CH2-CH2-CHF-CF2-, -CH2-CF2-, -CH2-CH2-CF2- '-CH2-CH2-CH2-CF2- '-CH2-CH2 -CH2-CH2-CF2-» is preferably a phosphonium cation or an iron iodide cation, and is selected from the group consisting of an iron cation (anthracene cation) represented by the above formula (3) and the above formula (4). Preferably, at least one type of key cation of the group of key cations (iodine cations) is preferred. In the above formula (3), R4a, 1141) and R4e are each independently a monovalent hydrocarbon group having 1 to 30 carbon atoms or a number of nuclear atoms. a monovalent heterocyclic group of 4 to 30. However, some or all of the hydrogen atoms of the above hydrocarbon group and heterocyclic group may be substituted. Further, any two of R4a, R4b and R4e are bonded to each other, and together with the sulfur atom to which they are bonded, form a cyclic structure. In the above formula (4), each of the ruler 53 and the group R5b is independently a 1-12-201202272 valent hydrocarbon group having a carbon number of 1 to 3 Å or a monovalent heterocyclic group having a nuclear number of 4 to 30. However, part or all of the hydrogen atom of the heterocyclic group may be substituted. R5b is bonded to each other and may be co-structured with the iodine atom to which they are bonded. a hydrocarbon group having 1 to 30 carbon atoms represented by R5a and R5b in the above formula (3), and an ethyl group, an ethyl group, an η-propyl group, an n-butylene group, and a core extension. a monovalent alicyclic hydrocarbon group such as a cyclopentyl group; a cyclopentyl group, a cyclopentyl group, a cyclohexyl group, a dicyclopentanyl group, a tricyclododecyl group, an adamantyl group; a monovalent hydrocarbon group of an alicyclic hydrocarbon group; ; phenyl, naphthyl, anthracenyl-tolyl, m-tolyl, ρ-tolyl, ρ-hydroxyphenylphenyl, mesitylene, decanoyl, 2,3-xylyl, Base, 2,5-dimethylphenyl, 2,6-dimethylphenyl, 3,4-dimethyltolyl, ρ-fluorophenyl, p-difluoromethylphenyl, p-chlorophenyl, hydrazine- A monovalent aromatic hydrocarbon group which may be substituted with an iodophenyl group or the like; a monovalent hydrocarbon group of the above aromatic hydrocarbon group. The R1a, R4b, and R4e in the above formula (3) are preferably a furan group, a thiol group, a pyranyl group, a pyrrolyl group, and a monovalent group having 4 to 30 atomic numbers of R5a and R5b. Azyl, isothiazolyl, isoxazolyl, pyrazinyl, pyrimidinyltetrahydropyranyl, tetrahydrofuranyl, tetrahydrothiopyranyl, tetra-, 3-tetrahydrothiophene-1,1-dioxide Wait. As the substituent having the above hydrocarbon group and heterocyclic group, a hydroxyl group, a carboxyl group, a cyano group, a nitro group, a halogenated hydrocarbon group, an alkoxy group, a hydrocarbon group, and R5a and a ring form k are the above formulas (4) a valence chain hydrocarbyl ring fluorenyl group having four parts of an upper, a biphenyl group, a P-methoxy 2,4-dimethylphenyl group, a 3,5-diyl group, and a P-bromobenzene group having the above formula (4 heterocyclic group, such as a thioxyl group, a pyridyl group, a pyridazinyl group, a hydrogenthiofuranyl halogen atom, a group, an amine group, a -13-201202272 thiol group is preferable. As the phosphonium cation represented by the above formula (3), For example, a cation represented by the following formula (i-Ι) to (i-27), etc., and the iodonium cation represented by the above formula (4), for example, may be exemplified by the following formula (ii-Ι)~ (ii-25) The cations shown, etc. [Chem. 7]
-14- 201202272 【化8】-14- 201202272 【化8】
(H3C)3C(H3C) 3C
(ί-14)(ί-14)
〇C2H5〇C2H5
(i-22 ) (Μ5)(i-22) (Μ5)
15- 201202272 【化9】15- 201202272 【化9】
Ο I o=s=o I ch3Ο I o=s=o I ch3
(i-24)(i-24)
(i-25)(i-25)
(i-27) 0 1o=s=o(i-27) 0 1o=s=o
ch3 -16- 201202272 【化1 0】QrOΗ3α^〇^,+"0~ (ii-1 )Ch3 -16- 201202272 [化1 0]QrOΗ3α^〇^,+"0~ (ii-1)
Or令 CH3 (ii-2 ) CH,Or order CH3 (ii-2) CH,
CH3 (ii-4 )CH3 (ii-4)
H3CH3C
h3c "CH, ch3 (ii-5) C2H5 (ii-7 ) CH(CH3)2 (ii-9) C(CH3)3 02N—^r^—1+~N〇2 (ii-14 ) N02ΟγΆ N〇2 o2n (ii-13) -17- 201202272 【化1 1】 ~~^~"〇CH3 (ii_16)H3c "CH, ch3 (ii-5) C2H5 (ii-7 ) CH(CH3)2 (ii-9) C(CH3)3 02N—^r^—1+~N〇2 (ii-14 ) N02ΟγΆ N〇2 o2n (ii-13) -17- 201202272 【化1 1】~~^~"〇CH3 (ii_16)
H3CO OCH3 (ii-17) (iM8)H3CO OCH3 (ii-17) (iM8)
(H-21 ) (ii-23 ) (ii-24 ) (ii-25 ) 其中以(i-1) 、 (i-23) 、 (ii-1) 、 (ii-21)及( i i - 2 2 )爲佳。 且,上述M +所示1價鑰陽離子例如可依據Advances in Polymer Science,Vol.62,p.l_48 ( 1984)所記載之一般 方法而合成。〔A〕聚合物可含有1種或2種以上的上述 M +所示1價鑰陽離子。 作爲結構單位(I ),例如可舉出下述式(1 -1 )〜( 1 -1 0 )所示結構單位。 -18- 201202272 【化1 2】(H-21) (ii-23) (ii-24) (ii-25) where (i-1), (i-23), (ii-1), (ii-21) and (ii-2) 2) is better. Further, the monovalent cation represented by the above M + can be synthesized, for example, according to the general method described in Advances in Polymer Science, Vol. 62, p. l_48 (1984). The polymer [A] may contain one or more kinds of the above-mentioned monovalent cations represented by M + . The structural unit (I) is, for example, a structural unit represented by the following formula (1 -1 ) to (1 -1 0 ). -18- 201202272 【化1 2】
上述式(1-1)〜(1-10)中,R1及M +的定義與上述 式(1 )相同。 其中以上述式(1-1) 、 (1-2) 、 (1-4) 、 (1-5) 及(1 -6 )各所示結構單位爲佳。 作爲賦予結構單位(I )之單體,例如可舉出下述式 (m -1 -1 )〜(m -1 - 2 3 )所示聚合性化合物等。 -19· 201202272 【化1 3】In the above formulae (1-1) to (1-10), the definitions of R1 and M + are the same as those in the above formula (1). Among them, the structural unit shown by each of the above formulae (1-1), (1-2), (1-4), (1-5), and (1-6) is preferable. The monomer to which the structural unit (I) is added is, for example, a polymerizable compound represented by the following formula (m -1 -1 ) to (m -1 - 2 3 ). -19· 201202272 【化1 3】
CF,CF,
【化1 4】[化1 4]
-20- 201202272-20- 201202272
其中’以上述式(m-l-l) 、 (m-1-14) 、 (m-1-15 )、(m -1 -1 6 )及(m -1 -1 7 )各所示聚合性化合物爲佳。 〔結構單位(II)〕 〔A〕聚合物除具有結構單位(I)以外,具有上述式 (5 )所示結構單位(II )者爲佳。結構單位(II )爲具有 藉由酸之作用可脫離的保護基(酸解離性基),且具有藉 由酸之作用可脫離該保護基並於〔A〕聚合物表現鹼可溶 性的功能者。 -21 - 201202272 上述式(5)中’ R1的定義與上述式(i)相同 、R9及R 各獨2爲碳數1〜4的院基或碳數4〜20 烷基。但’ R9及Rie爲彼此結合,可與彼等所結合之 子共同形成碳數4〜20的環鏈烷二基。 作爲上述R8、R9及RIG所示碳數1〜4的烷基。 可舉出甲基、乙基、η-丙基、i-丙基、n-丁基、2 -甲 基、1-甲基丙基、t -丁基等。其中以甲基及乙基爲佳。 作爲上述R8、R9及RIG所示碳數4〜20的環烷 可舉出環丁基、環戊基、環己基、環庚基 '環辛基等 之環烷基;降莰烷基、二環戊烷基、二環戊烯基、三 基、四環十二烷基、金剛烷基等具有有橋脂環骨架之 基等。 作爲上述R9及RIQ彼此結合與彼等所結合之碳 共同所形成的碳數4〜20的環鏈院二基,例如可舉出 述環烷基除去1個氫原子之基。其中以環戊院二基、 烷二基、環辛烷二基、降莰烷二基、金剛烷二基及四 二烷二基爲佳,以環戊烷二基、金剛烷二基及四環十 二基爲更佳。 作爲結構單位(II)以下述式(5-1 )〜式(5_17 示結構單位爲佳。 。R8 的環 碳原 例如 基丙 基, 單環 環癸 環烷 原子 自上 環己 環十 二烷 )所 -22- 201202272 【化1 6 R1 -CH2 — C — c=o R1 —|~CH2-C' ~~CH2 — c c=oI o ο (5-2)Among them, 'polymerized compounds represented by the above formulas (mll), (m-1-14), (m-1-15), (m -1 -1 6 ), and (m -1 -1 7 ) are preferred. . [Structural unit (II)] [A] The polymer is preferably a structural unit (II) having the structural unit (I) and having the structural unit (II) represented by the above formula (5). The structural unit (II) is a protecting group (acid dissociable group) which is detachable by the action of an acid, and has a function of desorbing the protecting group by an action of an acid and exhibiting alkali solubility in the [A] polymer. -21 - 201202272 In the above formula (5), the definition of R1 is the same as that of the above formula (i), and each of R9 and R is a group having a carbon number of 1 to 4 or a carbon number of 4 to 20 alkyl groups. However, 'R9 and Rie are combined with each other to form a cycloalkanediyl group having 4 to 20 carbon atoms together with the group to which they are combined. The alkyl group having 1 to 4 carbon atoms represented by the above R8, R9 and RIG. Examples thereof include a methyl group, an ethyl group, an η-propyl group, an i-propyl group, an n-butyl group, a 2-methyl group, a 1-methylpropyl group, and a t-butyl group. Among them, a methyl group and an ethyl group are preferred. Examples of the cyclohexane having 4 to 20 carbon atoms represented by R8, R9 and RIG include a cycloalkyl group such as a cyclobutyl group, a cyclopentyl group, a cyclohexyl group or a cycloheptyl 'cyclooctyl group; A group having a bridged alicyclic skeleton or the like, such as a cyclopentyl group, a dicyclopentenyl group, a triyl group, a tetracyclododecyl group or an adamantyl group. Examples of the cyclic chain dibasic group having 4 to 20 carbon atoms which are formed by combining R9 and RIQ with each other and carbon to be bonded thereto include, for example, a group in which a cycloalkyl group is removed by one hydrogen atom. Among them, cyclopentene diyl, alkanediyl, cyclooctanediyl, norbornanediyl, adamantanediyl and tetradioxane are preferred, cyclopentanediyl, adamantane diyl and tetra The ring twelve base is better. The structural unit (II) is preferably a structural unit represented by the following formula (5-1) to formula (5-17). The ring carbon of R8 is, for example, a propyl group, a monocyclic cyclononanal atom from the upper cyclohexane cyclododecane. -22- 201202272 【化1 6 R1 -CH2 — C — c=o R1 —|~CH2-C' ~~CH2 — cc=oI o ο (5-2)
R1 R1 ~~CH2 — C ~CH2 - C - c=o I oR1 R1 ~~CH2 — C ~CH2 - C - c=o I o
(5-4) (5-5) R1 (5-3)(5-4) (5-5) R1 (5-3)
C2H5 (5-8) R1 c=oI 01 ό (5-9) -CH2 — C —J— c=o I oC2H5 (5-8) R1 c=oI 01 ό (5-9) -CH2 — C —J— c=o I o
R1 I (5-6) (5-7)R1 I (5-6) (5-7)
I r1 —ch2—c ch2—c (5-11) (5-12) c=oI o ~~CH2 - c -J—I I 1 c=o c=o H3C — C 一 CH3 H3C — C — CH3 H3C — C — CH3 R1 —CH2 — c * R1 —CH2 - c - (5-13) 0 1I r1 —ch2—c ch2—c (5-11) (5-12) c=oI o ~~CH2 - c -J—II 1 c=oc=o H3C — C—CH3 H3C — C — CH3 H3C — C — CH3 R1 —CH2 — c * R1 —CH2 - c - (5-13) 0 1
(5-14)(5-14)
0 I0 I
(5-15)(5-15)
II
C = 0 IC = 0 I
c=o c2h5c=o c2h5
上述式中,R1的定義與上述式(1)相同。 其中以上述式(5-2) 、 (5-3) 、 (5-4) 、 (5-10) 、(5-11) 、(5-12) 、(5-16)及(5-17)各所示結構 -23- 201202272 單位爲佳,以上述式(5-2 ) 、(5-3) 、(5-10) 、( 5- 11)及(5-17)各所示結構單位爲較佳。 〔結構單位(III)〕 〔A〕聚合物係以具有選自具有內酯結構之結構單位 及具有環狀碳酸酯結構之結構單位所成群之至少1種結構 單位(III)者爲佳。 (ίϋ-28 作爲具有內酯結構之結構單位,例如可舉出來自(甲 基)丙烯酸-5-側氧-4-噁-三環〔5.2.1.〇3’8〕癸-2-基酯、 (甲基)丙烯酸- ]〇-甲氧基羰基-5-側氧-4-噁-三環〔 5.2.1.03’8〕壬-2-基酯、(甲基)丙烯酸-4-甲氧基羰基-6. 側氧-7-噁-雙環〔3.2.1〕辛-2-基酯、(甲基)丙烯酸 側氧-8-噁-雙環〔3.3.1〕壬-2-基酯、(甲基)丙烯酸_4· 甲氧基羰基-7-側氧-8-噁-雙環〔3.3.1〕壬-2-基酯、(甲 基)丙烯酸-2-側氧四氫吡喃-4-基酯、(甲基)丙烯酸 乙基-2-側氧四氫卩比喃-4-基醋、(甲基)丙稀酸-4-丙基- 2-側氧四氬卩比喃_4 -基醋、(甲基)丙稀酸-2,2·二甲基側 氧四氫呋喃_3·基醋、(甲基)丙嫌酸_4,4_二甲基-5-側氧 四氫呋喃-3-基酯、(甲基)丙烯酸·4,4-二甲基-2-側氧四 氫呋喃-3 -基酯、(甲基)丙烯酸_5,5 -二甲基_2 -側氧四氮 呋喃-3_基酯、(甲基)丙烯酸-5-側氧四氫呋喃_2_基甲基 醋、(甲基)丙烯酸-3,3 -二甲基-5-側氧四氫呋喃-2_基甲 基醋、(甲基)丙烯酸二甲基側氧四氫呋喃_2_基 甲基酯等化合物的結構單位及下述式() -24- 201202272 )所示結構單位等。 【化1 7】In the above formula, the definition of R1 is the same as the above formula (1). Among them, the above formulas (5-2), (5-3), (5-4), (5-10), (5-11), (5-12), (5-16), and (5-17) ) Each of the illustrated structures -23- 201202272 is better, with the structural units shown by the above formulas (5-2), (5-3), (5-10), (5-11), and (5-17) It is better. [Structural unit (III)] [A] The polymer is preferably one having at least one structural unit (III) having a structural unit selected from the group consisting of a lactone structure and a structural unit having a cyclic carbonate structure. (ίϋ-28 As a structural unit having a lactone structure, for example, 5-(oxy)-4-oxo-tricyclo[5.2.1.〇3'8]indol-2-yl from (meth)acrylic acid is exemplified. Ester, (meth)acrylic acid-]〇-methoxycarbonyl-5-sideoxy-4-oxo-tricyclo[5.2.1.03'8]non-2-yl ester, (meth)acrylic acid-4-methyl Oxycarbonyl-6-oxo-7-oxo-bicyclo[3.2.1]oct-2-yl ester, (meth)acrylic acid side oxo-8-oxa-bicyclo[3.3.1]non-2-yl ester , (meth)acrylic acid _4·methoxycarbonyl-7-sideoxy-8-oxa-bicyclo[3.3.1]non-2-yl ester, (meth)acrylic acid-2-oxotetrahydropyran -4-yl ester, ethyl-2-oxo-oxytetrahydroindole-pyran-4-yl vinegar, (meth)acrylic acid-4-propyl-2-oxo-oxo-argon _4-based vinegar, (meth)acrylic acid-2,2·dimethyl-oxo-oxytetrahydrofuran_3·yl vinegar, (methyl)propionic acid _4,4-dimethyl-5-side Oxytetrahydrofuran-3-yl ester, (meth)acrylic acid 4,4-dimethyl-2-oxo-tetrahydrofuran-3-yl ester, (meth)acrylic acid _5,5-dimethyl-2 - side Oxytetrazolidine-3-yl ester, (meth)acrylic acid-5-side oxytetrahydrofuran _2_methyl vinegar, (meth)acrylic acid-3,3-dimethyl-5-oxo-tetrahydrofuran-2-yl methyl vinegar, dimethyl oxytetrahydrofuran (meth) acrylate The structural unit of a compound such as a base ester and a structural unit represented by the following formula () -24-201202272). [化1 7]
(»1-1) (iii-2) (iii-3) (iii-4) (iii-5) (iii-6) (iij-7)(»1-1) (iii-2) (iii-3) (iii-4) (iii-5) (iii-6) (iij-7)
(»i-8) (»i-9) (iii-1〇) (iii-11) (iii-12) (iii-13) (iii-14) 【化1 8】(»i-8) (»i-9) (iii-1〇) (iii-11) (iii-12) (iii-13) (iii-14) [Chem. 1 8]
0 0 Ο O 〇 (iii-15) (iii-16) (iii-17) (iii-18) (iiM9>0 0 Ο O 〇 (iii-15) (iii-16) (iii-17) (iii-18) (iiM9>
(i»-20) (iii-21) (iii-22) (iii-23)(i»-20) (iii-21) (iii-22) (iii-23)
(in-24) (ii'-25) (iii-26) (iii-27) (iii-28) 上述式中,R1的定義與上述式(1)相同。 -25- 201202272 其中,以(iii-6 )所示結構單位爲佳。 作爲具有環狀碳酸酯結構之結構單位,例如可舉出下 述式(iv-Ι)〜(iv-21)所示結構單位等。 【化1 91(in-24) (ii'-25) (iii-26) (iii-27) (iii-28) In the above formula, the definition of R1 is the same as the above formula (1). -25- 201202272 Among them, the structural unit represented by (iii-6) is preferred. The structural unit having a cyclic carbonate structure may, for example, be a structural unit represented by the following formulas (iv-Ι) to (iv-21). 【化1 91
(iv-17) (ίν-18) (ίν-19) (iv-20) (ίν-21) -26- 201202272 上述式中,R1的定義與上述式(1)相同。 其中以上述式(iv-22 )所示結構單位爲佳》 <其他結構單位> 〔A〕聚合物具有結構單位(I )〜(111 )以外,作 爲其他結構單位,例如亦可具有來自(甲基)丙烯酸羥基 烷基酯、(甲基)丙烯酸羥基環烷基酯、(甲基)丙烯酸 羥基芳基酯、羧基含有(甲基)丙烯酸酯之結構單位等。 其中,各來自(甲基)丙烯酸羥基環烷基酯及(甲基)丙 烧酸經基芳基醋之結構單位爲佳,各來自(甲基)丙嫌酸 羥基金剛烷基酯、(甲基)丙烯酸羥基苯基酯及(甲基) 丙烯酸羥基萘基酯之結構單位爲較佳。 且,該敏輻射線性樹脂組成物可含有共聚合比或分子 量相異的二種以上之〔A〕聚合物,亦可含有〔A〕聚合 物之同時含有其他聚合物。作爲構成上述其他聚合物之結 構單位,可舉出上述結構單位(Π)或上述其他結構單位 所舉者。 上述結構單位(I)的含有比率對於含於該敏輻射線 性樹脂組成物之聚合物全結構單位而言,較佳爲〇. i〜2〇 莫耳% ’更佳爲0.1〜15莫耳%。在該含有比率下使用時 ,圖型形狀之提高或LWR減低等效果可進一步充分地表 現。 上述結構單位(11 )之含有比率對於含於該敏輻射線 性樹脂組成物之聚合物全結構單位而言,較佳爲2〇〜8〇 -27- 201202272 莫耳% ’更佳爲25〜75莫耳%。藉由以該含有比率下使 用時’可得到解像性優良的同時,亦可得到與基板之密著 性優良的光阻圖型。 上述結構單位(III )之含有比率對於含於該敏輻射 線性樹脂組成物的聚合物全結構單位而言,較佳爲1 〇〜 80莫耳%,更佳爲2〇〜70莫耳%。在該含有比率下使用 時,可得到阻抗被膜與基板之密著性優良的同時,亦可得 到圖型形成性優良的組成物。 上述其他結構單位之含有比率對於含於該敏輻射線性 樹脂組成物之聚合物全結構單位而言,較佳爲40莫耳% 以下,更佳爲30莫耳%以下。在該含有比率下使用時, 可得到圖型形成性優良的組成物。 <〔A〕聚合物的合成方法> 〔A〕聚合物的合成方法雖無特別限定,例如可將對 應所望結構單位組成之聚合性不飽和單體,在自由基聚合 啓始劑或視必要在連鎖移動劑等存在下,於適當溶劑中進 行聚合而合成。自由基聚合啓始劑因可實現充分聚合速度 ,故添加至充分高濃度爲佳。 作爲上述自由基聚合啓始劑,雖無特別限定,可舉出 熱聚合啓始劑、氧化還原聚合啓始劑、光聚合啓始劑。具 體可舉出例如過氧化物或偶氮化合物等聚合啓始劑。作爲 更具體之自由基聚合啓始劑,可舉出t-丁基氫過氧化物、 t-過氧化苯甲酸叔丁酯、苯甲醯基過氧化物、2,2’-偶氮雙 -28- 201202272 (2,4-二甲基戊腈)、2,2,-偶氮二異丁腈(AIBN )、 1,1’-偶氮雙(環己烷甲腈)、二甲基-2,2’-偶氮二異丁酸 酯(MAIB )等。 作爲上述連鎖移動劑,可舉出吡唑衍生物 '烷硫醇類 等。 對於上述聚合操作可使用一般分批式聚合、滴下聚合 等方法。例如對於形成各上述結構單位(I ) 、( Π )及 其他結構單位之單體,以必要種類及量溶解於有機溶劑, 在自由基聚合啓始劑、及視必要的連鎖移動劑等存在下進 行聚合,可得到〔A〕聚合物。聚合溶劑爲使用一般可溶 解單體、自由基聚合啓始劑及連鎖移動劑的有機溶劑。作 爲有機溶劑,可舉出酮系溶劑、醚系溶劑、非質子系極性 溶劑、酯系溶劑、芳香族系溶劑、鏈狀或環狀脂肪族系溶 劑。作爲酮系溶劑,可舉出甲基乙基酮、丙酮等。作爲醚 系溶劑,例如可舉出甲氧基二甲基醚(甲縮醛)、二乙基 醚等二烷基醚;四氫呋喃、1,4-二噁烷等環狀醚等。作爲 非質子系極性溶劑,可舉出二甲基甲醯胺、二甲亞颯等。 作爲酯系溶劑,例如可舉出乙酸乙酯、乙酸甲酯等乙酸烷 酯。作爲芳香族系溶劑,例如可舉出甲苯、二甲苯等烷基 含有芳香族烴溶劑;氯苯等鹵素化芳香族烴溶劑等。作爲 脂肪族系溶劑,可舉出己烷等鏈狀脂肪族系溶劑:環己烷 等環狀脂肪族系溶劑等。 聚合溫度一般爲20°C〜120°C,較佳爲50°C〜1 l〇°c, 更佳爲60 °C〜100 °C。一般在大氣環境中亦可聚合,但在 -29- 201202272 氮或氬等惰性氣體環境下的聚合爲佳。所得之〔A〕聚合 物之分子量可在控制單體量與連鎖移動劑量之比率而調整 。聚合時間一般爲0.5小時〜M4小時,較佳爲1小時〜 7 2小時,更佳爲2小時〜2 4小時。 〔A〕聚合物爲於分子鏈末端可具有來自連鎖移動劑 之殘基,亦可於分子鏈末端不具有來自連鎖移動劑之殘基 ,又亦可於分子鏈末端殘存一部份的來自連鎖移動劑之殘 基的狀態。 使用於該敏輻射線性樹脂組成物之〔A〕聚合物及其 他聚合物,雖當然鹵素、金屬等雜質較少,但殘留單體或 寡聚物成分在既定値以下,例如藉由HP LC之分析以0.1 質量%以下爲佳,藉此作爲阻抗之感度、解像度、製程安 定性、圖型形狀等不僅可進一步改善,液中異物或感度等 經時變化亦較少,可作爲阻抗使用而得到敏輻射線性樹脂 組成物。 作爲上述聚合物之精製法,例如可舉出以下方法。作 爲除去金屬等雜質之方法’可舉出使用界達電位過濾器, 吸附聚合物溶液中之金屬的方法或以草酸或磺酸等酸性水 溶液洗淨聚合物溶液後使金屬成爲螯合狀態而除去之方法 等。又’作爲除去殘留單體或寡聚物成分至規定値以下的 方法,可舉出藉由組合水洗或適當溶劑,除去殘留單體或 寡聚物成分之液體萃取法、僅萃取除去特定分子量以下者 的極限過濾等在溶液狀態下的精製方法、或藉由將聚合物 溶液滴入於貧溶劑中’使聚合物於貧溶劑中凝固後除去殘 -30- 201202272 留單體等再沈澱法或將過濾分離的聚合物泥發以貧 淨等在固體狀態的精製方法。又,亦可組合彼等方 爲使用於上述再沈澱法之貧溶劑,因受到精製之聚 物性等’故無法一槪例示,帶但若爲斯業者亦可配 物之物性等而做適宜選定。 〔A〕聚合物之藉由凝膠滲透層析法(GPC ) 乙烯換算重量平均分子量(以下亦稱爲「Mw」) 爲 1,000 〜300,000’ 較佳爲 2,000 〜300,000, 2,000〜20,000。〔 A〕聚合物的Mw未達1,〇〇〇時 阻抗之耐熱性會有降低之傾向,另一方面,: 3 0 0,0 0 0時,作爲阻抗之顯像性會有降低的傾向。 又,〔A〕聚合物的Mw與藉由凝膠滲透層 GPC )之聚苯乙烯換算數平均分子量(以下亦稱爲 )之比(Mw/Mn ),較佳爲1〜5,更佳爲1〜3, 1 〜1 · 6。 <〔B〕化合物> 該敏輻射線性樹脂組成物,除含有〔A〕聚合 ,含有使用於控制酸之擴散的上述式(2)所示〔B 物。〔B〕化合物對於在曝光步驟所產生的酸,作 作用,另一方面藉由活性光線或放射線之照射而分 去鹼性。因此,若爲含有〔B〕化合物之該敏輻射 脂組成物,在曝光部中酸會擴散,在未曝光部中之 受到控制,故可得到良好對比。 溶劑洗 法。作 合物的 合聚合 之聚苯 ,一般 €佳爲 ,作爲 专超過 折法( 「Μη」 特佳爲 物以外 〕化合 爲鹼而 解並失 線性樹 酸擴散 -31 - 201202272 上述式(2)中,Y爲氫原子、羥基、丙烯醯基或甲 基丙烯醯基。R3爲碳數1〜20的2價烴基或_r_Z-R,-。R 及R’各獨立爲碳數1〜20的2價烴基。Ζ爲-〇-、-CO-、 -COO-、-OCO-、-ΝΗ-、-NHCO·或-CONH-。X·爲-〇·、 -COO·、-S〇r或-N、S02-R”。R”爲碳數1〜20的1價烴基 ’該烴基之氫原子的一部份或全部可由氟原子所取代。又 ,R與R ’彼此結合可形成環。Q +爲鑰陽離子。 作爲上述R3、R及R’所示碳數1〜20的2價烴基, 可舉出伸甲基 '伸乙基、η-伸丙基、η-伸丁基、η-伸戊基 等鏈狀烴基;自環戊烷、環己烷、二環戊烷、三環癸烷、 四環十二烷、降莰烷、金剛烷等脂環式烴除去2個氫原子 的脂環式烴基;一部份具有上述脂環式烴基之2價烴基; 伸苯基、伸萘基、伸聯苯基等芳香族烴基;一部份具有上 述芳香族烴基之2價烴基等。這些烴基爲一部份或全部氫 原子可由氟原子所取代》但,X·爲- S03_時,S03·基與所結 合之碳原子由氟原子或全氟烷基所取代之化合物並不佳。 作爲上述Q +所示鑰陽離子,與〔A〕聚合物中之M + 所示鑰陽離子同樣地,選自上述式(3 )所示鑰陽離子( 鎏陽離子)及上述式(4)所示鑰陽離子(碘鑰陽離子) 所成群之至少1種鑰陽離子爲佳。其中亦以上述式(3 ) 所示鑰陽離子(鎏陽離子)爲佳,以三苯基鎏陽離子爲更 佳。 〔B〕化合物係以選自上述式(2-1 )〜(2-6 )各所 示化合物所成群之至少一種爲佳。 -32- 201202272 上述式(2-1)〜(2-6)中,R6爲碳數1〜6的1價 鏈狀烴基。R7各獨立爲碳數1〜6的2價鏈狀烴基。Q +的 定義與上述式(2)相同。 作爲上述R6所示1價鏈狀烴基,例如可舉出甲基、 乙基、η -丙基、i·丙基、η -丁基、i-丁基、sec -丁基、t -丁 基、η-戊基、n_己基等。其中,亦以η·丁基、n_戊基及n — 己基爲佳’以n_丁基爲較佳。 作爲上述R7所示2價鏈狀烴基,例如可舉出伸甲基 、伸乙基、η -伸丙基、i -伸丙基、η -伸丁基、η -伸戊基等 。其中亦以伸乙基、η -伸丙基及i -伸丙基爲佳,以伸乙基 爲更佳。 上述式(2-1 )〜(2-6 )所示化合物之中,亦以式( 2-1) ' (2-2) 、(2-3)及(2-4)所示化合物爲佳,以 式(2-1 )所示化合物爲較佳。 〔B〕化合物的含有量,由可確保作爲阻抗之感度及 顯像性的觀點來看,對於〔A〕聚合物1 00質量份而言, 以0.1〜20質量份爲佳,更佳爲0.5〜10質量份。該含有 量未達0.1質量份時,LWR之改良效果恐怕會有不充分的 情況。另一方面,超過20質量份時,作爲阻抗的感度恐 怕會顯著降低的情況。 <任意成分> 該敏輻射線性樹脂組成物中作爲任意成分’視必要可 含有〔C〕敏輻射線性酸產生劑、〔D〕酸擴散控制劑、 -33- 201202272 〔E〕溶劑、〔F〕添加物等。 <〔C〕敏輻射線性酸產生劑> 該敏輻射線性樹脂組成物其爲具有〔A〕聚合物之結 構單位(I)藉由曝光而產生酸之單位,故雖無需要含有 其他產生酸之化合物,但亦可含有其他〔C〕敏輻射線性 酸產生劑(以下亦稱爲「〔 C〕酸產生劑」)。 作爲上述〔C〕酸產生劑,可舉出鎏鹽或碘鑰鹽等鑰 鹽、有機鹵素化合物、雙颯類或雙偶氮甲烷颯類等颯化合 物。 作爲上述〔C〕酸產生劑之較佳具體例,可舉出三苯 基鎏三氟甲烷磺酸酯、三苯蕋鎏九氟-η-丁烷磺酸酯、三 苯基鎏全氟-η-辛烷磺酸酯、三苯基鎏2-雙環〔2.2.1〕庚-2-基-1,1,2,2 -四氟乙院磺酸酯、三苯基鎏棒腦礦酸酯等三 苯基鎏氯化合物; 4-環己基苯基二苯基鎏三氟甲烷磺酸酯、4-環己基苯 基二苯基鎏九氟-η-丁烷磺酸酯、4-環己基苯基二苯基蜜 全氟-η -辛垸擴酸醋、4·環己基苯基二苯基璧 2 -雙環〔 2.2.1〕庚-2-基-1,1,2,2-四氟乙院擴酸醋、4-環己基苯基二 苯基鎏樟腦磺酸酯等4_環己基苯基二苯基g氯化合物; 4·甲烷磺醯基苯基二苯基鎏三氟甲烷磺酸酯、4_甲院 磺醯基苯基二苯基鎏九氟-η -丁烷磺酸酯、4_甲院擴醯基 苯基二苯基鎏全氟-η -辛烷磺酸酯、4 -甲烷磺醯基苯基二 苯基璧2-雙環〔2.2.1〕庚-2-基-ΐ,ΐ,2,2-四氟乙院擴酸醋 • 34 - 201202272 、4 -甲院擴醯基本基一本基變樟腦擴酸酯等4_甲院磺醯基 苯基二苯基鎏氯化合物; 二苯基碘鑰二氟甲院擴酸酯、二苯基碘鑰九氟-n—丁 烷磺酸酯、一苯基碘鑰全氟-η -辛烷磺酸酯、二苯基碘鏺 2-雙環〔2.2.1〕庚-2-基·1,1,2,2 -四氟乙烷磺酸酯' 二苯基 碘鑰樟腦磺酸酯等二苯基碘鑰氯化合物; 雙(4-t -丁基苯基)碘鑰三氟甲烷磺酸酯、雙(4_t_ 丁基苯基)姚鑰九氣-η -丁院擴酸醋、雙(4_t_ 丁基苯基) 碘鑰全氟- η-辛烷磺酸酯、雙(4-t -丁基苯基)碘鐵2 -雙環 〔2.2.1〕庚-2-基-1,1,2,2 -四氟乙院碼酸酯、雙(4_t_ 丁基 苯基)碘鑰樟腦磺酸酯等雙(4-t -丁基苯基)碘鑰氯化合 物; 卜(4-n -丁氧基萘-1-基)四氫噻吩鎗三氟甲烷磺酸酯 、l-(4-n-丁氧基萘-1-基)四氫噻吩鑰九氟-n_T烷磺酸 酯、1_(4-η-丁氧基萘-1-基)四氫噻吩鑰全氟-η_辛烷磺 酸酯、1-(4-η -丁氧基萘-1-基)四氫唾吩鑰2 -雙環〔 2_2.1〕庚-2-基-1,1,2,2-四銳乙院擴酸酯、1_(4-11-丁氧基 萘-1-基)四氫噻吩鑰樟腦磺酸酯等1-(4-η-丁氧基萘-1-基)四氫噻吩鑰氯化合物; 1-(6-η-丁氧基萘-2-基)四氫噻吩鑰三氟甲烷磺酸酯 、1-(6-η-丁氧基萘-2-基)四氫噻吩鎰九氟-η-丁烷磺酸 酯、1-(6-η-丁氧基萘-2-基)四氫噻吩鐵全氟-η·辛烷磺 酸酯、1- ( 6-η-丁氧基萘-2-基)四氫噻吩鎗 2-雙環〔 2.2.1〕庚-2-基-1,1,2,2-四氟乙烷磺酸酯、1-( 6-η-丁氧基 -35- 201202272 萘-2-基)四氫噻吩鐡樟腦磺酸酯等1-( 4-n-丁氧基萘-h 基)四氫噻吩鑰氯化合物; 1- ( 3,5-二甲基-4-羥基苯基)四氫噻吩鑰三氟甲烷磺 酸酯、1- ( 3,5-二甲基-4-羥基苯基)四氫噻吩鎗九氟-n_ 丁烷磺酸酯、1-(3,5-二甲基-4_羥基苯基)四氫噻吩鑰全 氟-η-辛烷磺酸酯、1-(3,5-二甲基-4-羥基苯基)四氫噻 吩鑰2-雙環〔2.2.1〕庚-2-基-1,1,2,2-四氟乙烷磺酸酯、 1-(3,5-二甲基-4-羥基苯基)四氫噻吩鑰樟腦磺酸酯等1-(3,5-二甲基-4-羥基苯基)四氫噻吩鎗氯化合物; Ν-(三氟甲烷磺醯基氧基)雙環〔2.2.1〕庚-5-烯-2,3·二羧基亞胺、Ν-(九氟-η-丁烷磺醯基氧基)雙環〔 2.2.1〕庚-5-烯-2,3-二羧基亞胺、Ν-(全氟·η-辛烷磺醯基 氧基)雙環〔2.2.1〕庚-5-烯-2,3-二羧基亞胺、Ν- (2-雙 環〔2.2.1〕庚-2-基-1,1,2,2-四氟乙烷磺醯基氧基)雙環 〔2.2.1〕庚-5-烯-2,3-二羧基亞胺、Ν- ( 2- ( 3-四環〔 4.4.0.12’5.17’1()〕十二烷基)-1,1-二氟乙烷磺醯基氧基) 雙環〔2.2.1〕庚-5-烯-2,3-二羧基亞胺、Ν-(樟腦磺醯基 氧基)雙環〔2.2.1〕庚-5-烯-2,3-二羧基亞胺等雙環〔 2.2.1〕庚-5-烯-2,3-二羧基亞胺類化合物等。 〔C〕酸產生劑可單獨或混合2種以上使用。〔C〕 酸產生劑的含有量由可確保作爲阻抗之感度及顯像性的觀 點來看,對於〔A〕聚合物100質量份而言,以30質量 份以下爲佳,以0.1〜20質量份爲較佳。〔C〕酸產生劑 的含有量超過3 0質量份時,對於放射線之透明性會降低 -36- 201202272 ,有著難以得到矩形光阻圖型之傾向。 <〔D〕酸擴散控制劑> 該敏輻射線性樹脂組成物可含有〔D〕酸擴散控制劑 (但’除去〔B〕化合物)。含有該敏輻射線性樹脂組成 物之〔B〕化合物因具有酸擴散控制性,即使不與其他酸 擴散控制劑倂用,亦可得到良好解像度、圖型形狀、LWR 特性,但可使用其他〔D〕酸擴散控制劑。作爲〔D〕酸 擴散控制劑使用含氮化合物爲佳。 作爲上述含氮化合物,例如可舉出下述式(6 )所示 化合物(以下亦稱爲「含氮化合物(〇」)、同—分子 内具有2個氮原子之化合物(以下亦稱爲「含氮化合物( Π)」)、同一分子内具有3個以上氮原子之聚胺基化合 物及含有氮原子之聚合性化合物的聚合物(以下綜合稱爲 「含氮化合物(III )」)、含有醯胺基之化合物、脲化 合物、含氮雜環化合物等。 【化2 0】 R15a p15b 一 _ p15c ( 6 ) 上述式(6)中’ R15a、R15b及Rl5e各獨立爲氫原子 、可被取代之直鏈狀、分支狀的烷基、環烷基、芳基或芳 院基。 作爲含氮化合物(I ),例如可舉出η-己基胺、η-庚 基胺、η-辛基胺、η-壬基胺、η_癸基胺、環己基胺等單( 環)烷基胺類;二正丁基胺、二正戊基胺、二正己基胺' -37- 201202272 二正庚基胺、二正辛基胺、二正壬基胺、 己基甲基胺、二環己基胺等二(環)烷基 、三正丙基胺、三正丁基胺、三正戊基胺 三正庚基胺、三正辛基胺、三正壬基胺、 己基二甲基胺、甲基二環己基胺、三環己 烷基胺類;2,2’,2”·硝基三乙醇等取代烷 甲基苯胺、N,N-二甲基苯胺、2-甲基苯胺 4-甲基苯胺、4-硝基苯胺、二苯基胺、三 、2,4,6·三第三丁基-N-甲基苯胺、N-苯塞 二異丙基苯胺等芳香族胺類。 作爲含氮化合物(II ),例如可 N,N,N’,N’-四甲基乙二胺、四伸甲基二胺 、4,4’-二胺基二苯基甲烷、4,4’-二胺基 二胺基二苯甲酮、4,4’-二胺基二苯基胺· 苯基)丙烷、2- ( 3-胺基苯基)-2- ( 4-胺 2- ( 4·胺基苯基)-2- ( 3-羥基苯基)丙烧 基)-2- ( 4-羥基苯基)丙烷、1,4-雙〔1-1-甲基乙基〕苯、1,3-雙〔1-(4-胺基苯 〕苯、雙(2-二甲胺基乙基)醚、雙(2. 醚、丨-(2-羥基乙基)-2-咪唑烷酮、 N,N,N’,N’-肆(2-羥基丙基)乙二胺、N, 基二伸乙基三胺等。 作爲含氮化合物(III ),例如可舉 聚烯丙胺、2-二甲胺基乙基丙烯基醯胺之 二正癸基胺、環 胺類;三乙基胺 :、三正己基胺、 三正癸基胺、環 基胺等三(環) 基胺;苯胺、N-:、3 -甲基苯胺、 苯基胺、萘基胺 I二乙醇胺、2,6- 「舉出乙二胺、 、六伸甲基二胺 二苯基醚、4,4’-‘ 2,2-雙(4-胺基 基苯基)丙烷、 ί、2- ( 4-胺基苯 (4-胺基苯基)-基)-1-甲基乙基 -二乙胺基乙基) 2 -喹喔啉醇、 Ν,Ν’,Ν’’,Ν’’-五甲 出聚乙烯亞胺、 聚合物等。 -38- 201202272 作爲含有醯胺基之化合物,例如可舉出N-t -丁氧基羰 基二正辛基胺、N-t-丁氧基羰基二正壬基胺、N-t-丁氧基 羰基二正癸基胺、N-t-丁氧基羰基二環己基胺、N-t· 丁氧 基羰基-1-金剛烷基胺、N-t-丁氧基羰基-2-金剛烷基胺、 N-t-丁氧基羰基-N-甲基-1-金剛烷基胺、(S ) - ( - ) -1-( t-丁氧基羰基)-2-吡咯烷甲醇、(R) - (+ ) 丁氧 基羰基)-2-吡咯烷甲醇、N-t-丁氧基羰基-4-羥基哌啶、 N-t-丁氧基羰基吡咯烷、N-t-丁氧基羰基哌嗪、N,N-二-t-丁氧基羰基-1-金剛烷基胺、N,N -二-t -丁氧基羰基-N -甲 基-1-金剛烷基胺、N-t-丁氧基羰基-4,4’-二胺基二苯基甲 烷、Ν,Ν’-二-t-丁氧基羰基六伸甲基二胺、N,N,N’N’-四-t-丁氧基羰基六伸甲基二胺、 N,N’-二-t-丁氧基羰基-1,7-二胺基庚烷、Ν,Ν’-二-t-丁氧基羰基-1,8-二胺基辛烷、N,N’-二-t-丁氧基羰基-1,9-二胺基壬烷、N,N’-二-t-丁氧基羰基-l,l〇-二胺基癸烷、 N,N’-二-t-丁氧基羰基-1,12-二胺基十二烷、Ν,Ν’-二-t-丁 氧基羰基-4,4’-二胺基二苯基甲烷、N-t-丁氧基羰基苯並 咪唑、N-t-丁氧基羰基-2 -甲基苯並咪唑、:N-t-丁氧基羰 基-2-苯基苯並咪唑、N-t-丁氧基羰基吡咯烷等N-t·丁氧基 羰基含有胺基化合物以外,亦可舉出甲醯胺、N-甲基甲醯 胺、N,N-二甲基甲醯胺、乙醯胺' N-甲基乙醯胺、N,N-二 甲基乙醯胺、丙醯胺、苯甲醯胺胺、吡咯烷酮、N-甲基吡 咯烷酮、N -乙醯基-1-金剛烷基胺、異氰尿酸參(2 -羥基 乙基)等。 -39- 201202272 作爲脲化合物,例如可舉出脲、甲基脲、1,1-二 脲、1,3-二甲基脲、1,1,3,3-四甲基脲、1,3-二苯基脲 正丁硫脲等。 作爲含氮雜環化合物,例如可舉出咪唑、4-甲基 、4-甲基-2-苯基咪唑、苯並咪唑、2-苯基苯並咪唑、 甲基-2 -甲基咪唑、1-苯甲基-2 -甲基-1H-咪唑等咪唑 吡啶、2-甲基吡啶、4-甲基吡啶、2-乙基吡啶、4-乙 啶、2-苯基吡啶' 4-苯基吡啶、2-甲基-4-苯基吡啶、 、菸酸、菸酸醯胺、喹啉' 4-羥基喹啉、8-氧基唾啉 啶、2,2’ : 6’,2”-聯三吡啶等吡啶類;哌嗪、1- ( 2-羥 基)哌嗪等哌嗪類以外,亦可舉出吡嗪、吡唑、噠嗪 喔啉、嘌呤、吡咯烷、哌啶、哌啶乙醇、3 -哌啶-1,2 -二醇、嗎啉、4-甲基嗎啉、1· ( 4-嗎啉)乙醇、4-乙 嗎啉、3- ( N-嗎啉代)-1,2-丙烷二醇、1,4-二甲基哌 1,4-二氮雜雙環〔2.2.2〕辛烷等。 作爲〔D〕酸擴散控制劑之含有量,對於〔A〕 物1 00質量份而言以1 5質量份以下爲佳,以1 〇質量 下爲更佳,以5質量份以下爲特佳。上述含有量若 1 5質量份時,作爲阻抗的感度及曝光區域之顯像性 會有降低之情況。〔D〕酸擴散控制劑之含有量若 0.001質量份時,在製程條件下作爲阻抗的圖型形狀 寸忠實度恐怕會有下降之顧慮。 <〔E〕溶劑> 甲基 咪唑 1 -苯 類; 基吡 薛鹼 、吖 基乙 、喹 丙烷 醯基 嗪、 聚合 份以 超過 恐怕 未達 或尺 -40- 201202272 該敏輻射線性樹脂組成物一般爲含有〔E〕溶劑。作 爲使用於上述敏輻射線性樹脂組成物之調製的溶劑,若爲 可將上述〔A〕聚合物、〔B〕化合物及任意成分溶解或 分散者即可,並無特別限定,例如可舉出2-戊酮' 2-己酮 、2-庚酮' 2-辛酮等直鏈狀或分支狀酮類; 環戊酮、環己酮等環狀酮類; 丙二醇單甲基醚乙酸酯、丙二醇單乙基醚乙酸酯等丙 二醇單烷基醚乙酸酯類; 乙二醇單甲基醚乙酸酯、乙二醇單乙基醚乙酸酯等乙 二醇單烷基醚乙酸酯類; 丙二醇單甲基醚、丙二醇單乙基醚等丙二醇單烷基醚 類; 乙二醇單甲基醚、乙二醇單乙基醚等乙二醇單烷基醚 類; 二乙二醇二甲基醚、二乙二醇二乙基醚等二乙二醇二 烷基醚類; 2-羥基丙酸甲酯、2-羥基丙酸乙酯等2-羥基丙酸烷酯 類; 3 -甲氧基丙酸甲酯、3-甲氧基丙酸乙酯、3-乙氧基丙 酸甲酯、3-乙氧基丙酸乙酯等3_烷氧基丙酸烷酯類; 乙酸η-丁酯、丙酮酸甲酯、丙酮酸乙酯等酯類; Ν-甲基吡咯烷酮等內醯胺類: r-丁內酯等內酯類等。 〔E〕溶劑可使用1種或2種以上。其中亦以使用選 -41 - 201202272 自丙二醇單烷基醚乙酸酯類、丙二醇單烷基醚類、直鏈狀 、分支狀或環狀之酮類、2-羥基丙酸烷基類、3-烷氧基丙 酸烷基類及內酯類所成群之至少1種爲佳’以選自丙二醇 單甲基醚乙酸酯、丙二醇單甲基醚、2-庚酮、環己酮、2-羥基丙酸乙基、3 -乙氧基丙酸乙基及r -丁內酯所成群之 至少1種爲更佳,以選自丙二醇單甲基醚乙酸酯、環己酮 及r -丁內酯所成群之至少1種爲特佳。 <〔F〕添加劑> 該敏輻射線性樹脂組成物中作爲〔F〕添加劑,例如 可含有脂環族添加劑、界面活性劑、增感劑等。 〔脂環族添加劑〕 脂環族添加劑爲顯示對乾蝕刻耐性、圖型形狀、與基 板之接著性等進一步改善之作用的成分。脂環族添加劑可 具有酸解離性基。 作爲上述脂環族添加劑,例如可舉出1 -金剛烷羧酸t-丁酯、1-金剛烷羧酸t-丁氧基羰基甲酯、1-金剛烷羧酸α 丁內酯、1,3-金剛烷二羧酸二-t-丁酯、1-金剛烷乙酸t-丁 酯、〗-金剛烷乙酸t-丁氧基羰基甲酯、丨,3-金剛烷二乙酸 二-t-丁酯、2,5-二甲基-2,5-二(金剛烷基羰基氧基)己烷 等金剛烷衍生物類; 脫氧膽酸t-丁酯 '脫氧膽酸t·丁氧基羰基甲酯、脫氧 膽酸2-乙氧基乙酯、脫氧膽酸2_環己基氧基乙酯、脫氧 -42- 201202272 膽酸3 -側氧環己酯、脫氧膽酸四氫吡喃 '脫氧膽酸甲羥 戊酸內酯等脫氧膽酸酯類;膽石酸t-丁酯、膽石酸t-丁氧 基羰基甲酯、膽石酸2_乙氧基乙酯、膽石酸2-環己基氧 基乙酯、膽石酸3 -側氧環己酯、膽石酸四氫吡喃酯 '膽 石酸甲羥戊酸內酯等膽石酸酯類;己二酸二甲酯、己二酸 二乙酯、己二酸二丙酯、己二酸二η-丁酯、己二酸二t-丁 酯等烷基羧酸酯類等。且,上述脂環族添加劑可使用1種 或2種以上。 〔界面活性劑〕 界面活性劑爲顯示改良塗佈性、條紋、顯像性等作用 之成分。作爲上述界面活性劑,例如可舉出聚環氧乙烷月 桂基醚、聚環氧乙烷硬脂醯基醚、聚環氧乙烷油基醚、聚 環氧乙烷η-辛基苯基醚、聚環氧乙烷n-壬基苯基醚、聚 乙二醇二月桂酸酯、聚乙二醇二硬脂酸酯等非離子系界面 活性劑以外,亦可舉出以下所有商品名之ΚΡ 3 4 1 (信越化 學工業公司製)、Poly-FlowN〇.75,同 Νο·95(共榮公司 化學公司製)、EftopEF301,同 EF3 03,同 EF3 52 ( TOHKEM PRODUCTS 公司製)、MEGAFACF171,同 F173(大日本油墨化學工業公司製)、FLUOR ARD FC4 3 0 ,同 FC431(住友 3M 公司製)、AashiGuardAG710, SURFLON S-3 8 2,同 SC-101,同 SC-102,同 SC-103,同 SC-104,同 SC-105,同 SC-106(旭硝子公司製)等《上 述界面活性劑可使用1種或2種以上。作爲界面活性劑之 -43- 201202272 配合量,對於〔A〕聚合物100質量份而言以 下者爲佳。 〔增感劑〕 增感劑爲顯示吸收放射線之能源,將該能 酸產生劑,藉此增加酸之生成量的作用者’具 敏輻射線性樹脂組成物之感度的效果者。作爲 如可舉出咔唑類、二苯甲酮類、孟加拉玫紅類 類等。上述增感劑可使用1種或2種以上。ft 配合量,對於聚合物100質量份而言,以50 爲佳。 <敏輻射線性樹脂組成物之調製方法> 該敏輻射線性樹脂組成物一般爲溶解於 至全固體成分濃度(對於〔E〕溶劑以外成分 組成物的比率)爲1〜50質量%,較佳至3〜 例如可藉由孔徑0.2 v m程度之過濾器進行遇 敏輻射線性樹脂組成物溶液。 【實施方式】 [實施例] 以下舉出實施例,對於本發明之實施形! 體說明。但,本發明並未限制於彼等實施例。 例中之各物性測定以下述方法進行。 2質量份以 源傳達至光 有僅提高該 增感劑,例 、蒽類、酚 爲增感劑之 質量份以下 〔E〕溶劑中 合計質量之 25質量%, 丨濾,調製出 做進一步辱 下述各合成 -44- 201202272 〔重量平均分子量(Mw)及數平均分子量(Μη)〕 對於合成例1〜7、12及13,使用 TOSOH公司製 GPC 管柱(G2000HXL2 本、G3 000HXL1 本、G4000HXL1 本),在流量l.OmL/分鐘,在作爲溶離溶劑之四氫呋喃 '管柱溫度40 °C之分析條件下,藉由將單分散聚苯乙烯作 爲標準的凝膠滲透層析法(GPC )進行測定。 對於合成例8〜1 1,作爲GPC管柱使用TOSOH公司 製 GPC 管柱(TSKgel a -2500 ' TSKgel a -Μ ),流量 l.OmL/分鐘,作爲溶離溶劑,使用溶解LiBr之3 0mmol/L 與H3P04的10mmol/L之二甲基甲醯胺,在管柱溫度40°C 之分析條件下將 MALLS ( Wyatt公司製,DAWN DSP、 CelltypeK5、雷射波長632.8nm)作爲檢測器使用,藉由 凝膠滲透層析法(GPC )而測定。 〔13C-NMR 分析〕 使用日本電子公司製「JNM-EX2 70」進行測定。 <〔A〕聚合物的合成> 使用於〔A〕聚合物的合成之各單體如以下所示。 -45- 201202272 【化2 1】 0^0 ΟΤΌ(iv-17) (ίν-18) (ίν-19) (iv-20) (ίν-21) -26- 201202272 In the above formula, the definition of R1 is the same as the above formula (1). The structural unit represented by the above formula (iv-22) is preferred. <Other structural units> [A] The polymer has structural units (I) to (111), and may be, for example, other structural units. A hydroxyalkyl (meth) acrylate, a hydroxycycloalkyl (meth) acrylate, a hydroxyaryl (meth) acrylate, a structural unit in which a carboxyl group contains a (meth) acrylate, or the like. Wherein, each of the structural units derived from the hydroxycycloalkyl (meth) acrylate and the (meth) propyl succinic acid via the aryl vinegar are each derived from (meth) propyl hydroxyadamantyl amide, (A) The structural unit of hydroxyphenyl acrylate and hydroxy naphthyl (meth) acrylate is preferred. Further, the radiation sensitive linear resin composition may contain two or more kinds of [A] polymers having a copolymerization ratio or a molecular weight, and may contain the polymer of [A] and other polymers. The structural unit constituting the above other polymer may be the above-mentioned structural unit (Π) or the other structural unit mentioned above. The content ratio of the above structural unit (I) is preferably 〇. i 〜 2 〇 mol % 'more preferably 0.1 to 15 mol % for the polymer total structural unit contained in the sensitized linear resin composition. . When used at this content ratio, effects such as an increase in pattern shape or a decrease in LWR can be further sufficiently exhibited. The content ratio of the above structural unit (11) is preferably 2 〇 to 8 〇 -27 - 201202272 摩尔 % 'more preferably 25 to 75 for the polymer total structural unit contained in the sensitive radiation linear resin composition. Moer%. When the film is used at the content ratio, it is excellent in resolution, and a photoresist pattern excellent in adhesion to the substrate can be obtained. The content ratio of the above structural unit (III) is preferably from 1 〇 to 80 mol%, more preferably from 2 〇 to 70 mol%, based on the total structural unit of the polymer contained in the radiation sensitive linear resin composition. When it is used in the content ratio, it is possible to obtain a composition excellent in pattern formability while obtaining excellent adhesion between the resist film and the substrate. The content ratio of the other structural unit is preferably 40 mol% or less, more preferably 30 mol% or less, based on the total polymer unit of the linear composition of the radiation sensitive resin. When it is used at this content ratio, a composition excellent in pattern formability can be obtained. <Method for synthesizing [A] polymer> [A] The method for synthesizing the polymer is not particularly limited, and for example, a polymerizable unsaturated monomer having a composition corresponding to a desired structural unit can be used as a radical polymerization initiator or It is necessary to carry out polymerization in a suitable solvent in the presence of a chain shifting agent or the like to synthesize. Since the radical polymerization initiator can achieve a sufficient polymerization rate, it is preferably added to a sufficiently high concentration. The radical polymerization initiator is not particularly limited, and examples thereof include a thermal polymerization initiator, a redox polymerization initiator, and a photopolymerization initiator. Specifically, a polymerization initiator such as a peroxide or an azo compound can be mentioned. As a more specific radical polymerization initiator, t-butyl hydroperoxide, t-butyl peroxybenzoate, benzamidine peroxide, 2,2'-azobis- 28- 201202272 (2,4-Dimethylvaleronitrile), 2,2,-azobisisobutyronitrile (AIBN), 1,1'-azobis(cyclohexanecarbonitrile), dimethyl- 2,2'-azobisisobutyrate (MAIB) and the like. Examples of the above-mentioned chain shifting agent include a pyrazole derivative 'alkanolthiol' and the like. For the above polymerization operation, a general batch polymerization, a dropping polymerization or the like can be used. For example, the monomer forming each of the structural units (I), ((), and other structural units is dissolved in an organic solvent in a necessary type and amount, in the presence of a radical polymerization initiator, and, if necessary, a chain shifting agent. The polymerization is carried out to obtain [A] a polymer. The polymerization solvent is an organic solvent using a generally soluble monomer, a radical polymerization initiator, and a chain transfer agent. Examples of the organic solvent include a ketone solvent, an ether solvent, an aprotic polar solvent, an ester solvent, an aromatic solvent, a chain or a cyclic aliphatic solvent. Examples of the ketone solvent include methyl ethyl ketone and acetone. Examples of the ether solvent include dialkyl ethers such as methoxydimethyl ether (methylal) and diethyl ether; and cyclic ethers such as tetrahydrofuran and 1,4-dioxane. Examples of the aprotic polar solvent include dimethylformamide and dimethylhydrazine. The ester solvent may, for example, be an alkyl acetate such as ethyl acetate or methyl acetate. Examples of the aromatic solvent include an alkyl group-containing aromatic hydrocarbon solvent such as toluene or xylene; and a halogenated aromatic hydrocarbon solvent such as chlorobenzene. Examples of the aliphatic solvent include a chain aliphatic solvent such as hexane: a cyclic aliphatic solvent such as cyclohexane. The polymerization temperature is usually from 20 ° C to 120 ° C, preferably from 50 ° C to 1 l ° ° C, more preferably from 60 ° C to 100 ° C. Generally, it can be polymerized in the atmosphere, but it is preferably polymerized under an inert gas atmosphere such as -29-201202272 nitrogen or argon. The molecular weight of the resulting [A] polymer can be adjusted by controlling the ratio of the monomer amount to the linkage shift amount. The polymerization time is usually from 0.5 hours to M4 hours, preferably from 1 hour to 7 hours, more preferably from 2 hours to 2 hours. [A] The polymer may have residues from the chain-shifting agent at the end of the molecular chain, may also have no residues from the chain-shifting agent at the end of the molecular chain, or may remain at the end of the molecular chain from the chain. The state of the residue of the mobile agent. The polymer [A] used in the linear radiation-sensitive resin composition and other polymers, although of course less impurities such as halogen and metal, but the residual monomer or oligomer component is below the predetermined enthalpy, for example, by HP LC. The analysis is preferably 0.1% by mass or less, whereby the sensitivity, the resolution, the process stability, and the shape of the pattern can be further improved, and the change in the foreign matter or the sensitivity of the liquid is less, and can be used as an impedance. Sensitive radiation linear resin composition. As a method of purifying the above polymer, for example, the following method can be mentioned. As a method of removing impurities such as a metal, a method of adsorbing a metal in a polymer solution by using an boundary potential filter, or washing a polymer solution with an acidic aqueous solution such as oxalic acid or sulfonic acid, and then removing the metal into a chelate state can be mentioned. Method and so on. Further, as a method for removing the residual monomer or oligomer component to a predetermined enthalpy or less, a liquid extraction method in which residual monomer or oligomer component is removed by combining water washing or a suitable solvent, and only a specific molecular weight or less is extracted and removed. Refining method such as limiting filtration or the like in a solution state, or by dropping a polymer solution into a poor solvent, and then removing the residual -30-201202272 residual monomer after solidification of the polymer in a poor solvent or The polymer sludge separated by filtration is subjected to a purification method in a solid state such as lean. In addition, it is also possible to combine the poor solvents used in the above-mentioned reprecipitation method, and it is not possible to exemplify the properties due to the purification of the polymer, etc., but it is suitable for the physical properties of the ligands, etc. . The weight average molecular weight (hereinafter also referred to as "Mw") of the [A] polymer by gel permeation chromatography (GPC) is 1,000 to 300,000', preferably 2,000 to 300,000, 2,000 to 20,000. [A] The Mw of the polymer is less than 1, and the heat resistance of the impedance tends to decrease. On the other hand, when the temperature is 3 0 0, 0 0 0, the development of the impedance tends to decrease. . Further, the ratio (Mw/Mn) of the polystyrene-converted number average molecular weight (hereinafter referred to as Mw) of the polymer of [A] to the gel permeation layer GPC) is preferably from 1 to 5, more preferably 1~3, 1~1 · 6. <[B] Compound> The radiation sensitive linear resin composition contains the [B] represented by the above formula (2) for controlling the diffusion of the acid, in addition to the polymerization of [A]. The compound [B] acts on the acid produced in the exposure step, and on the other hand, is alkaline by irradiation with active rays or radiation. Therefore, in the case of the sensitized radiation grease composition containing the compound [B], acid is diffused in the exposed portion and controlled in the unexposed portion, so that a good contrast can be obtained. Solvent wash. The polyphenylene of the polymer of the composition is generally good, and is used as a specific excess method ("Μη" is particularly good) to combine into a base to solve the problem and lose linear alkalic acid diffusion -31 - 201202272 The above formula (2) In the above, Y is a hydrogen atom, a hydroxyl group, an acryloyl group or a methacryloyl group. R3 is a divalent hydrocarbon group having 1 to 20 carbon atoms or _r_Z-R, -. R and R' are each independently a carbon number of 1 to 20 A divalent hydrocarbon group: Ζ is -〇-, -CO-, -COO-, -OCO-, -ΝΗ-, -NHCO· or -CONH-. X· is -〇·, -COO·, -S〇r Or -N, S02-R". R" is a monovalent hydrocarbon group having 1 to 20 carbon atoms. A part or all of the hydrogen atom of the hydrocarbon group may be substituted by a fluorine atom. Further, R and R' are bonded to each other to form a ring. Q + is a key cation. Examples of the divalent hydrocarbon group having 1 to 20 carbon atoms represented by R 3 , R and R′ include a methyl group, an ethyl group, an η-propyl group, and an η-butyl group. a chain hydrocarbon group such as η-amyl pentyl; removing 2 hydrogens from an alicyclic hydrocarbon such as cyclopentane, cyclohexane, dicyclopentane, tricyclodecane, tetracyclododecane, norbornane or adamantane An alicyclic hydrocarbon group of an atom; a part of a divalent hydrocarbon group having the above alicyclic hydrocarbon group An aromatic hydrocarbon group such as a phenyl group, a naphthyl group or a biphenyl group; a part of a divalent hydrocarbon group having the above aromatic hydrocarbon group; etc. These hydrocarbon groups are partially or wholly hydrogen atoms which may be substituted by a fluorine atom" · When it is -S03_, the compound in which the S03 group and the carbon atom to be bonded are substituted by a fluorine atom or a perfluoroalkyl group is not preferable. As the above-mentioned key cation of Q + , and M in the [A] polymer In the same manner, the key cation is preferably at least one type of key cation selected from the group consisting of a key cation (anthracene cation) represented by the above formula (3) and a key cation (iodine cation) represented by the above formula (4). Preferably, the key cation (germanium cation) represented by the above formula (3) is preferred, and the triphenylphosphonium cation is more preferred. The compound [B] is selected from the above formula (2-1) to (2-6). At least one of the groups of the above-mentioned compounds is preferred. -32-201202272 In the above formulae (2-1) to (2-6), R6 is a monovalent chain hydrocarbon group having 1 to 6 carbon atoms. The divalent chain hydrocarbon group having 1 to 6 carbon atoms. The definition of Q + is the same as the above formula (2). As the monovalent chain hydrocarbon group represented by the above R6, for example, Methyl, ethyl, η-propyl, i.propyl, η-butyl, i-butyl, sec-butyl, t-butyl, η-pentyl, n-hexyl, etc. Preferably, n-butyl group, n-pentyl group and n-hexyl group are preferably n-butyl group. Examples of the divalent chain hydrocarbon group represented by the above R7 include methyl group, ethyl group and η. - propyl, i - propyl, η - butyl, η - pentyl, etc. Among them, ethyl, η-propyl and i-propyl are preferred, and ethyl is extended. Better. Among the compounds represented by the above formulas (2-1) to (2-6), the compounds represented by the formulae (2-1)' (2-2), (2-3) and (2-4) are also preferred. A compound represented by the formula (2-1) is preferred. The content of the compound (B) is preferably from 0.1 to 20 parts by mass, more preferably from 0.5 to 20 parts by mass, based on the viewpoint of the sensitivity and the development property of the impedance. ~10 parts by mass. When the content is less than 0.1 part by mass, the effect of improving the LWR may be insufficient. On the other hand, when it exceeds 20 parts by mass, the sensitivity as an impedance may be remarkably lowered. <arbitrary component> The sensitive radiation linear resin composition may contain, as necessary, a [C] sensitive radiation linear acid generator, [D] acid diffusion control agent, -33-201202272 [E] solvent, F] Additives, etc. <[C]sensitive radiation linear acid generator> The radiation sensitive linear resin composition is a unit having the structural unit (I) of [A] polymer which is produced by exposure, so that it is not necessary to contain other An acid compound, but may also contain other [C] sensitive radiation linear acid generator (hereinafter also referred to as "[C] acid generator"). The above-mentioned [C] acid generator may, for example, be a sulfonium salt such as a phosphonium salt or an iodine salt, an organic halogen compound, a biguanide or a bisazomethane oxime. Preferable specific examples of the above [C] acid generator include triphenylsulfonium trifluoromethanesulfonate, triphenylsulfonium nonafluoro-η-butanesulfonate, and triphenylsulfonium perfluoro- Η-octane sulfonate, triphenylsulfonium 2-bicyclo[2.2.1]hept-2-yl-1,1,2,2-tetrafluoroethane sulfonate, triphenylsulfonium rod mineral acid Triphenylphosphonium chloride compound such as ester; 4-cyclohexylphenyldiphenylphosphonium trifluoromethanesulfonate, 4-cyclohexylphenyldiphenylphosphonium hexafluoro-η-butane sulfonate, 4-ring Hexyl phenyl diphenyl honey perfluoro-η - octyl sulphate, 4 · cyclohexyl phenyl diphenyl fluorene 2 - bicyclo [ 2.2.1 ] hept-2-yl-1, 1, 2, 2- 4_cyclohexylphenyl diphenyl g chloro compound such as tetrafluoroethylene vinegar, 4-cyclohexyl phenyl diphenyl camphole sulfonate; 4 · methanesulfonyl phenyl diphenyl fluorene Methanesulfonate, 4 _ _ _ sulfonyl phenyl diphenyl sulfonium hexafluoro-η - butane sulfonate, 4 _ _ _ 醯 醯 phenyl phenyl diphenyl fluorene perfluoro- η octane sulfonate Acid ester, 4-methanesulfonylphenyldiphenylfluorene 2-bicyclo[2.2.1]heptan-2-yl-indole, hydrazine, 2,2-tetrafluoroethane vinegar • 34 - 201202272, 4 -A hospital醯Basic base-based base 樟 扩 扩 扩 等 4 4 4 4 4 4 4 4 4 ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; - Butane sulfonate, monophenyl iodide perfluoro-η-octane sulfonate, diphenyl iodonium 2-bicyclo[2.2.1]hept-2-yl-1,1,2,2- Diphenyl iodide chloride compound such as tetrafluoroethane sulfonate diphenyl iodide camphorsulfonate; bis(4-t-butylphenyl) iodine trifluoromethanesulfonate, bis(4_t_丁Base phenyl) Yao Key Nine-n-Dingyuan vinegar, bis(4_t_butylphenyl) iodine perfluoro- η-octane sulfonate, bis(4-t-butylphenyl) iodine Iron 2 -bicyclo[2.2.1]heptan-2-yl-1,1,2,2-tetrafluorobenzine acid ester, bis(4_t_butylphenyl) iodine camphorsulfonate, etc. T-butylphenyl) iodine chloride compound; (4-n-butoxynaphthalen-1-yl)tetrahydrothiophene trifluoromethanesulfonate, 1-(4-n-butoxynaphthalene- 1-yl)tetrahydrothiophene hexafluoro-n-T alkane sulfonate, 1-(4-η-butoxynaphthalen-1-yl)tetrahydrothiophene-perfluoro-n-octane sulfonate, 1-( 4-n-butoxynaphthalen-1-yl)tetrahydrogen Key 2-bicyclo[2_2.1]hept-2-yl-1,1,2,2-tetra-ruthenium extended ester, 1_(4-11-butoxynaphthalen-1-yl)tetrahydrothiophene 1-(4-η-butoxynaphthalen-1-yl)tetrahydrothiophene key chlorine compound such as molybdenum sulfonate; 1-(6-η-butoxynaphthalen-2-yl)tetrahydrothiophene key three Fluoromethanesulfonate, 1-(6-η-butoxynaphthalen-2-yl)tetrahydrothiophene nonafluoro-η-butanesulfonate, 1-(6-η-butoxynaphthalene-2 -yl)tetrahydrothiophene iron perfluoro-η·octane sulfonate, 1-(6-η-butoxynaphthalen-2-yl)tetrahydrothiophene gun 2-bicyclo[2.2.1]heptan-2- Base-1,1,2,2-tetrafluoroethanesulfonate, 1-(6-η-butoxy-35- 201202272 naphthalen-2-yl)tetrahydrothiophene camphosulfonate, etc. 1-( 4-n-butoxynaphthalene-h group) tetrahydrothiophene key chlorine compound; 1-(3,5-dimethyl-4-hydroxyphenyl)tetrahydrothiophene trifluoromethanesulfonate, 1-( 3,5-Dimethyl-4-hydroxyphenyl)tetrahydrothiophene gun nonafluoro-n-butanesulfonate, 1-(3,5-dimethyl-4-hydroxyphenyl)tetrahydrothiophene Fluorine-n-octane sulfonate, 1-(3,5-dimethyl-4-hydroxyphenyl)tetrahydrothiophene key 2-bicyclo[2.2.1]hept-2-yl-1,1,2 2-tetrafluoroethane Sulfonic acid ester, 1-(3,5-dimethyl-4-hydroxyphenyl)tetrahydrothiophene such as 1-(3,5-dimethyl-4-hydroxyphenyl)tetrahydrothiophene camphorsulfonate Chloride compound; Ν-(trifluoromethanesulfonyloxy)bicyclo[2.2.1]hept-5-ene-2,3·dicarboxyimine, fluorene-(nonafluoro-η-butanesulfonyl) Oxy)bicyclo[2.2.1]hept-5-ene-2,3-dicarboxyimine, fluorene-(perfluoro·η-octanesulfonyloxy)bicyclo[2.2.1]hept-5- Alkene-2,3-dicarboxyimine, fluorene-(2-bicyclo[2.2.1]hept-2-yl-1,1,2,2-tetrafluoroethanesulfonyloxy)bicyclo[2.2. 1]hept-5-ene-2,3-dicarboxyimine, Ν-(2-(3-tetracyclo[ 4.4.0.12'5.17'1()]dodecyl)-1,1-difluoro Ethylsulfonyloxy)bicyclo[2.2.1]hept-5-ene-2,3-dicarboxyimine, anthracene-(camphorsulfonyloxy)bicyclo[2.2.1]hept-5-ene a bicyclo[2.2.1]hept-5-ene-2,3-dicarboxyimine compound such as 2,3-dicarboxyimine. The [C] acid generator may be used singly or in combination of two or more. [C] The content of the acid generator is preferably 30 parts by mass or less, and 0.1 to 20 masses per 100 parts by mass of the [A] polymer, from the viewpoint of ensuring sensitivity and development as an impedance. The serving is preferred. When the content of the [C] acid generator exceeds 30 parts by mass, the transparency to radiation is lowered -36 to 201202272, and it is difficult to obtain a rectangular resist pattern. <Dic acid diffusion controlling agent> The radiation sensitive linear resin composition may contain a [D] acid diffusion controlling agent (but 'removing the compound [B]). The compound [B] containing the linear radiation-sensitive resin composition has good acid diffusion controllability, and good resolution, pattern shape, and LWR characteristics can be obtained even if it is not used together with other acid diffusion control agents, but other [D] can be used. Acid diffusion control agent. It is preferred to use a nitrogen-containing compound as the [D] acid diffusion controlling agent. Examples of the nitrogen-containing compound include a compound represented by the following formula (6) (hereinafter also referred to as "nitrogen-containing compound ("), and a compound having two nitrogen atoms in the same molecule (hereinafter also referred to as " a nitrogen-containing compound (Π)", a polyamine-based compound having three or more nitrogen atoms in the same molecule, and a polymer containing a polymerizable compound of a nitrogen atom (hereinafter collectively referred to as "nitrogen-containing compound (III)")) a compound of a guanamine group, a urea compound, a nitrogen-containing heterocyclic compound, etc. [Chem. 2 0] R15a p15b - _ p15c (6) In the above formula (6), 'R15a, R15b and Rl5e are each independently a hydrogen atom and can be substituted. a linear or branched alkyl group, a cycloalkyl group, an aryl group or an aromatic group. Examples of the nitrogen-containing compound (I) include η-hexylamine, η-heptylamine, and η-octylamine. , η-mercaptoamine, η_mercaptoamine, cyclohexylamine, etc. mono(cyclo)alkylamines; di-n-butylamine, di-n-pentylamine, di-n-hexylamine' -37- 201202272 a di(cyclo)alkyl group such as a base amine, a di-n-octylamine, a di-n-decylamine, a hexylmethylamine or a dicyclohexylamine Tri-n-propylamine, tri-n-butylamine, tri-n-pentylamine tri-n-heptylamine, tri-n-octylamine, tri-n-decylamine, hexyldimethylamine, methyldicyclohexylamine, tricyclic Hexylamines; 2,2',2"·nitrotriethanol and other substituted alkylanilines, N,N-dimethylaniline, 2-methylaniline 4-methylaniline, 4-nitroaniline An aromatic amine such as diphenylamine, tris, 2,4,6·trit-butyl-N-methylaniline or N-benzodiisopropylaniline. As a nitrogen-containing compound (II), for example N,N,N',N'-tetramethylethylenediamine, tetramethylammoniumdiamine, 4,4'-diaminodiphenylmethane, 4,4'-diaminodiaminediyl Benzophenone, 4,4'-diaminodiphenylamine phenyl)propane, 2-(3-aminophenyl)-2-(4-amine2-(4-aminophenyl)- 2-(3-hydroxyphenyl)propanyl)-2-(4-hydroxyphenyl)propane, 1,4-bis[1-1-methylethyl]benzene, 1,3-bis[1- (4-Aminophenyl)benzene, bis(2-dimethylaminoethyl)ether, bis(2. ether, 丨-(2-hydroxyethyl)-2-imidazolidinone, N,N,N' , N'-肆(2-hydroxypropyl)ethylenediamine, N, group Ethyltriamine, etc. As the nitrogen-containing compound (III), for example, polyallylamine, 2-dimethylaminoethylpropenylamine di-n-decylamine, cyclic amines; triethylamine: , tri-(cyclo)amines such as tri-n-hexylamine, tri-n-decylamine, and cyclic amine; aniline, N-:, 3-methylaniline, phenylamine, naphthylamine I diethanolamine, 2,6- "Ethylenediamine, hexamethylenediamine diphenyl ether, 4,4'-' 2,2-bis(4-aminophenyl)propane, ί, 2-(4-amino group) Benzene (4-aminophenyl)-yl)-1-methylethyl-diethylaminoethyl) 2-quinoxalinol, hydrazine, Ν', Ν'', Ν''-五甲出Polyethyleneimine, polymer, and the like. -38-201202272 Examples of the compound containing a guanamine group include Nt-butoxycarbonyldi-n-octylamine, Nt-butoxycarbonyldi-n-decylamine, and Nt-butoxycarbonyldi-n-decyl group. Amine, Nt-butoxycarbonyldicyclohexylamine, Nt. Butoxycarbonyl-1-adamantylamine, Nt-butoxycarbonyl-2-adamantylamine, Nt-butoxycarbonyl-N- Methyl-1-adamantylamine, (S)-(-)-1-(t-butoxycarbonyl)-2-pyrrolidinemethanol, (R)-(+)butoxycarbonyl)-2- Pyrrolidine methanol, Nt-butoxycarbonyl-4-hydroxypiperidine, Nt-butoxycarbonylpyrrolidine, Nt-butoxycarbonylpiperazine, N,N-di-t-butoxycarbonyl-1- Adamantylamine, N,N-di-t-butoxycarbonyl-N-methyl-1-adamantylamine, Nt-butoxycarbonyl-4,4'-diaminodiphenylmethane, Ν,Ν'-di-t-butoxycarbonylhexamethyldiamine, N,N,N'N'-tetra-t-butoxycarbonylhexamethyldiamine, N,N'-di -t-butoxycarbonyl-1,7-diaminoheptane, anthracene, Ν'-di-t-butoxycarbonyl-1,8-diaminooctane, N,N'-di-t -butoxycarbonyl-1,9-diaminodecane, N, N '-Di-t-butoxycarbonyl-l,l-diaminodecane, N,N'-di-t-butoxycarbonyl-1,12-diaminododecane, anthracene, fluorene '-Di-t-butoxycarbonyl-4,4'-diaminodiphenylmethane, Nt-butoxycarbonylbenzimidazole, Nt-butoxycarbonyl-2-methylbenzimidazole,: Nt-butoxycarbonyl groups such as Nt-butoxycarbonyl-2-phenylbenzimidazole and Nt-butoxycarbonylpyrrolidine contain an amine group compound, and may also be exemplified by formamide or N-methylformamidine. Amine, N,N-dimethylformamide, acetamide 'N-methylacetamide, N,N-dimethylacetamide, acetamide, benzamide, pyrrolidone, N- Methyl pyrrolidone, N-ethinyl-1-adamantylamine, isocyanuric acid ginseng (2-hydroxyethyl), and the like. -39- 201202272 Examples of the urea compound include urea, methyl urea, 1,1-diurea, 1,3-dimethylurea, 1,1,3,3-tetramethylurea, 1,3. - Diphenylurea n-butylthiourea and the like. Examples of the nitrogen-containing heterocyclic compound include imidazole, 4-methyl, 4-methyl-2-phenylimidazole, benzimidazole, 2-phenylbenzimidazole, and methyl-2-methylimidazole. Imidazopyridine such as 1-benzyl-2-(methyl-1H-imidazole), 2-methylpyridine, 4-methylpyridine, 2-ethylpyridine, 4-ethylpyridine, 2-phenylpyridine '4-benzene Pyridine, 2-methyl-4-phenylpyridine, nicotinic acid, guanidinium nicotinate, quinoline '4-hydroxyquinoline, 8-oxysporinidine, 2,2': 6', 2" Pyridines such as bipyridyl; piperazines such as piperazine and 1-(2-hydroxy)piperazine; pyrazine, pyrazole, pyridazine, pyrene, pyrrolidine, piperidine, and piperazine Pyridineethanol, 3-piperidine-1,2-diol, morpholine, 4-methylmorpholine, 1·(4-morpholine)ethanol, 4-ethylmorpholine, 3-(N-morpholino) -1,2-propanediol, 1,4-dimethylpiperazin-1-diazabicyclo[2.2.2]octane, etc. As the content of the [D] acid diffusion controlling agent, for [A] The amount of the 10,000 parts by mass is preferably 15 parts by mass or less, more preferably 1 〇 by mass, and particularly preferably 5 parts by mass or less. When the content is 15 parts by mass or less, The sensitivity of the impedance and the development of the exposed area may be lowered. [D] If the content of the acid diffusion controlling agent is 0.001 part by mass, the loyalty of the pattern shape as the impedance may be lowered under the process conditions. <[E] Solvent> Methylimidazolium 1-Benzene; Kispixine, Mercaptoethyl, Quinolpropionylazine, Polymeric Fraction Over Do Not Fear or Ruler -40 - 201202272 The Sensitive Radiation The linear resin composition generally contains a solvent of [E]. As a solvent used for the preparation of the above-mentioned radiation sensitive linear resin composition, if the above [A] polymer, the compound [B] and any component are dissolved or dispersed, However, it is not particularly limited, and examples thereof include linear or branched ketones such as 2-pentanone '2-hexanone and 2-heptanone' 2-octanone; and cyclic rings such as cyclopentanone and cyclohexanone. Ketones; propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether acetate, etc.; propylene glycol monoalkyl ether acetate; ethylene glycol monomethyl ether acetate, ethylene glycol monoethyl ether acetate Ethylene glycol monoalkyl ether acetate such as ester; propylene glycol monomethyl ether, Propylene glycol monoalkyl ether such as propylene glycol monoethyl ether; ethylene glycol monoalkyl ether such as ethylene glycol monomethyl ether or ethylene glycol monoethyl ether; diethylene glycol dimethyl ether, diethylene glycol Diethylene glycol dialkyl ethers such as alcohol diethyl ether; 2-hydroxypropionic acid alkyl esters such as methyl 2-hydroxypropionate and ethyl 2-hydroxypropionate; methyl 3-methoxypropionate , 3-methoxypropionic acid alkyl esters such as ethyl 3-methoxypropionate, methyl 3-ethoxypropionate, ethyl 3-ethoxypropionate; η-butyl acetate, pyruvic acid An ester such as methyl ester or ethyl pyruvate; an internal guanamine such as Ν-methylpyrrolidone: a lactone such as r-butyrolactone. The solvent (E) may be used alone or in combination of two or more. Among them, the use of -41 - 201202272 from propylene glycol monoalkyl ether acetate, propylene glycol monoalkyl ethers, linear, branched or cyclic ketones, 2-hydroxypropionic acid alkyls, 3- At least one of the alkoxypropionic acid alkyl groups and the lactones is preferably selected from the group consisting of propylene glycol monomethyl ether acetate, propylene glycol monomethyl ether, 2-heptanone, cyclohexanone, 2 At least one selected from the group consisting of ethyl hydroxypropionate, ethyl 3-ethoxypropionic acid and r-butyrolactone is more preferably selected from the group consisting of propylene glycol monomethyl ether acetate, cyclohexanone and r At least one of the groups of -butyrolactone is particularly preferred. <[F] Additive> The sensitive radiation linear resin composition may contain, as an additive of [F], for example, an alicyclic additive, a surfactant, a sensitizer, or the like. [Cycloaliphatic Additive] The alicyclic additive is a component which exhibits an effect of further improving the dry etching resistance, the pattern shape, and the adhesion to the substrate. The alicyclic additive may have an acid dissociable group. Examples of the alicyclic additive include t-butyl adamantanecarboxylate, t-butoxycarbonylmethyl ester of 1-adamantanecarboxylate, and α-butanolactone of 1-adamantanecarboxylic acid, and 1, 3-adamantyl dicarboxylic acid di-t-butyl ester, 1-adamantanic acid t-butyl ester, 〗-adamantanic acid t-butoxycarbonyl methyl ester, hydrazine, 3-adamantane diacetic acid di-t- Adamantane derivatives such as butyl ester and 2,5-dimethyl-2,5-di(adamantylcarbonyloxy)hexane; t-butyl deoxycholate t-butoxycarbonyl deoxycholate Methyl ester, 2-ethoxyethyl deoxycholate, 2-cyclohexyloxyethyl deoxycholate, deoxy-42-201202272 3-oxocyclohexyl cholate, tetrahydropyran deoxycholate deoxygenation Deoxycholate such as mevalonate of cholic acid; t-butyl cholate, t-butoxycarbonyl methyl cholate, 2-ethoxyethyl cholate, cholinate 2 - cholesteryl esters such as cyclohexyloxyethyl ester, 3-oxocyclohexyl cholate, tetrahydropyranyl cholinate, and mevalonate of gallstone; dimethyl adipate , alkyl adipate, diethyl adipate, di-n-butyl adipate, di-t-butyl adipate, etc. Acid esters, etc. Further, one type or two or more types of the above alicyclic group additives may be used. [Interfacial Agent] The surfactant is a component which exhibits an effect of improving coatability, streaking, and developing properties. Examples of the above surfactant include polyethylene oxide lauryl ether, polyethylene oxide stearyl ether, polyethylene oxide oleyl ether, and polyethylene oxide η-octylphenyl group. Other non-ionic surfactants such as ether, polyethylene oxide n-nonylphenyl ether, polyethylene glycol dilaurate, and polyethylene glycol distearate may be mentioned below. ΚΡ 3 4 1 (manufactured by Shin-Etsu Chemical Co., Ltd.), Poly-FlowN〇.75, Νο·95 (manufactured by Kyoei Chemical Co., Ltd.), EftopEF301, EF3 03, EF3 52 (manufactured by TOHKEM PRODUCTS), MEGAFACF171 , with F173 (made by Dainippon Ink Chemical Industry Co., Ltd.), FLUOR ARD FC4 3 0, with FC431 (manufactured by Sumitomo 3M), AashiGuard AG710, SURFLON S-3 8 2, same as SC-101, same as SC-102, with SC- 103, the SC-104, the same SC-105, and the SC-106 (made by Asahi Glass Co., Ltd.), etc. "The above surfactants may be used alone or in combination of two or more. The blending amount of -43 to 201202272 as the surfactant is preferably 100 parts by mass of the [A] polymer. [Sensitizer] The sensitizer is an effect of the sensitivity of the radiation-sensitive linear resin composition, which is an energy source that absorbs radiation and uses this acid generator to increase the amount of acid generated. Examples thereof include carbazoles, benzophenones, and Bengal rose. One type or two or more types of the above sensitizers can be used. The amount of ft blended is preferably 50 for 100 parts by mass of the polymer. <Preparation method of sensitive radiation linear resin composition> The sensitive radiation linear resin composition is generally dissolved in the total solid content concentration (ratio of component composition other than [E] solvent) of 1 to 50% by mass. Preferably, the linear resin composition solution of the radiation sensitive radiation can be carried out by a filter having a pore size of about 0.2 vm. [Embodiment] [Embodiment] Hereinafter, an embodiment will be described, and the embodiment of the present invention will be formed! Body description. However, the invention is not limited to the embodiments. The physical properties of each of the samples were measured by the following methods. 2 parts by mass of the source is transmitted to the light, and the sensitizer is only increased, and the mass of the sensitizer is hereinafter, the mass of the sensitizer is less than or equal to 25% by mass based on the total mass of the solvent in the solvent (E). Each of the following synthesis-44-201202272 [weight average molecular weight (Mw) and number average molecular weight (?n)] For Synthesis Examples 1 to 7, 12 and 13, a GPC column (G2000HXL2, G3 000HXL1, G4000HXL1 manufactured by TOSOH Co., Ltd.) was used. This was carried out by using monodisperse polystyrene as a standard gel permeation chromatography (GPC) under the conditions of a flow rate of 1.0 mL/min under the conditions of a tetrahydrofuran column temperature of 40 ° C as a solvent of dissolution. Determination. For Synthesis Examples 8 to 1, a GPC column (TSKgel a -2500 'TSKgel a -Μ) manufactured by TOSOH Co., Ltd. was used as a GPC column, and a flow rate of 1.0 mL/min was used as a dissolution solvent, and 30 mmol/L of LiBr was dissolved. With 10 mmol/L of dimethylformamide of H3P04, MALLS (DAWN DSP, Celltype K5, laser wavelength 632.8 nm, manufactured by Wyatt Co., Ltd.) was used as a detector under the condition of a column temperature of 40 ° C. Determined by gel permeation chromatography (GPC). [13C-NMR analysis] The measurement was carried out using "JNM-EX2 70" manufactured by JEOL Ltd. <Synthesis of [A] Polymer> Each monomer used in the synthesis of the [A] polymer is shown below. -45- 201202272 【化2 1】 0^0 ΟΤΌ
cr ο ίCr ο ί
(M-2)(M-2)
IQ (M-1)IQ (M-1)
o八o°A o (M-6) 0^0o八o°A o (M-6) 0^0
OH (M-3) (M-4) CF, cf2 o=s=o I 〇- (M-9)OH (M-3) (M-4) CF, cf2 o=s=o I 〇- (M-9)
OH (M-13) (M-14)OH (M-13) (M-14)
QfO όQfO ό
0^00^0
OH (M-15) (M-12) 〔合成例1〕 、單體 準備將上述單體(M-l) 19.30g(46莫耳%) -46- 201202272 (M-7) 5.12g(4 莫耳 %)及單體(m-5) 25.58g(50 莫 耳%)溶解於2-丁酮l〇〇g’進一步溶解2,2’_偶氮雙(異 丁腈)(AIBN ) 1.89g (對於單體之合計莫耳數而言爲5 莫耳% )的單體溶液。另一方面,投入50g之2 -丁酮的 300mL之三口燒瓶以30分鐘氮取代,其後一般攪拌反應 釜一邊加熱至80°C,將事前準備的上述單體溶液使用滴定 漏斗’經3小時滴入。將滴入開始時間作爲聚合啓始時間 ,實施6小時的聚合反應。聚合終了後,藉由使聚合溶液 在水冷下’冷卻至30°C以下,再投入於l,000g之甲醇中 ’過濾分離析出之白色粉末。經過濾分離的白色粉末分2 次各200g以甲醇成爲泥漿狀而洗淨後,過濾分離並在 5 0°C下進行17小時乾燥,得到白色粉末之聚合物(A-1 ) (36.3g,產率 72.5%)。該聚合物(A-1)的 Mw爲 6,8 00,Mw/Mn (分子量分散度)爲1.35,"C-NMR分析 之結果,來自單體(M-7)之結構單位:來自單體(M-1 )之結構單位:來自單體(M-5 )之結構單位的含有比率 (莫耳比)爲4.0: 45.8: 50.2之共聚物。又,所得之聚 合物(A-1)的分子量未達1,000之低分子量成分的含有 比率經GPC進行測定之結果爲未達0.1莫耳%。 〔合成例 2、4、5、6、8、9、10、11 及 12〕 合成例1中,使用下述表1所示單體之種類及量以外 ,與合成例1同樣地,各得到聚合物(A-2 ) 、( A-4) ' (A-5) 、 ( A-6 ) 、 ( A-8 ) 、 ( A-9 ) 、 ( A-1 0 )、( -47 - 201202272 A-ll)及(a-l)。所得之聚合物之產率(%) 、Mw、OH (M-15) (M-12) [Synthesis Example 1], monomer preparation 19.30 g (46 mol%) of the above monomer (Ml) -46-201202272 (M-7) 5.12 g (4 mol) %) and monomer (m-5) 25.58g (50 mol%) dissolved in 2-butanone l〇〇g' further dissolved 2,2'-azobis(isobutyronitrile) (AIBN) 1.89g ( A monomer solution of 5 mol% for the total number of monomers in the monomer. On the other hand, a 300-mL three-necked flask containing 50 g of 2-butanone was substituted with nitrogen for 30 minutes, and then the mixture was heated to 80 ° C while stirring the reaction vessel, and the monomer solution prepared beforehand was used for 3 hours using a titration funnel. Drop in. The polymerization start reaction time was carried out as the polymerization initiation time, and the polymerization reaction was carried out for 6 hours. After the completion of the polymerization, the precipitated white powder was separated by filtration by cooling the polymerization solution to below 30 ° C under water cooling and then into methanol of 10,000 g. The white powder which was separated by filtration was washed twice with 200 g of methanol in a slurry form, and then separated by filtration and dried at 50 ° C for 17 hours to obtain a white powder polymer (A-1 ) (36.3 g, Yield 72.5%). The polymer (A-1) had Mw of 6,800 and Mw/Mn (molecular weight dispersion) of 1.35, and the result of C-NMR analysis, the structural unit derived from the monomer (M-7): from the single The structural unit of the body (M-1): a copolymer having a content ratio (molar ratio) of 4.0: 45.8: 50.2 from the structural unit of the monomer (M-5). Further, the content ratio of the low molecular weight component having a molecular weight of less than 1,000 of the obtained polymer (A-1) was less than 0.1 mol% as measured by GPC. [Synthesis Examples 2, 4, 5, 6, 8, 9, 10, 11 and 12] In the same manner as in Synthesis Example 1, except that the types and amounts of the monomers shown in the following Table 1 were used, Polymer (A-2), (A-4) ' (A-5), (A-6), (A-8), (A-9), (A-1 0 ), ( -47 - 201202272 A-ll) and (al). Yield (%), Mw, of the obtained polymer
Mw/Mn及各聚合物中的各結構單位之含有比率(莫耳% )的測定結果如表2所示。 〔合成例3、7及1 3〕 合成例1中,使用下述表1所示單體的種類及量,將 單體(M-3)自聚合前投入於三口燒瓶中以外,與合成例 1同樣地,得到聚合物(A-3 ) 、( A-7 )及(A-9 )。所 得之聚合物之產率(%) 、Mw、Mw/Mn及各聚合物中的 各結構單位之含有比率(莫耳% )的測定結果如表2所示 -48- 201202272 【1® 聚合啓始劑 莫耳% νη ίο υ-> to n υη VO 種類 CP < 2 PQ ♦—H < | A I bn| z ω < | A I bn| Z CQ Η-ί < A I BN 2 CQ H—· < A I BN A I BN A I BN 2 CQ < A I BN 單體裝入比 其他結構單位 莫耳% 1 1 1 1 1 1 1 1 o 异 1 1 單體 1 1 1 1 1 1 1 CM rH 1 00 Γ—i 1 ID τ-Η 1 1 1 結構單位(I I I ) 莫耳% 沄 民 單體 LO 1 to 1 s m 1 S LO 1 LO 1 CD 1 S LO 1 in 1 S in 1 S Ln 1 LD 1 LO 1 LO 1 結構單位(II) 莫耳% 妄 o o cn 單體 _1 τ-Η 1 οα 1 S 00 1 1 I—i 1 ι—Η 1 T-1 1 CO 1 i—i 1 i-H 1 艺 寸 r—H 1 寸 rH 1 r-H 1 00 1 結構單位(I) 莫耳% 对 寸 寸 寸 寸 对 VO 卜 卜 1 1 單體 Ο Ι S 卜 1 S 卜 1 Ο Ι S 00 1 卜 1 Ο Ι Oi 1 s O i—H 1 S i—H ι—Ί 1 s τ-Η r—1 1 s 1 1 Γ < 1 1~1 1 < CM 1 < 00 1 < 寸 1 < LO 1 < CD 1 < t> 1 c 00 1 < 1 < o i-H 1 < ?—1 i-H 1 < τ-Η 1 CO CXI 1 cn 1合成例i 1 1合成例2 1 1合成例3 1 丨合成例4 | 1合成例5 1 1合成例6 1 合成例7 1合成例8 1 1合成例9 1 丨合成例i ol 1合成例i il 1合成例1 2| 合成例1 3 -49- 201202272 【CNfi Mw /Μη yr\ CO OO cn as cn o v〇 cn 严— 5 1 1 1H ro r-^ 1—H CN r·^ CN Vi 1.46 Mw Ο g ν〇 o § v〇 O s \D 〇 〇 VO o o o o CO VO o CO v〇 o o r- o OO o o 卜 〇 OO r- 〇 v〇 o v〇 其他結構單位 莫耳% 1 1 1 1 1 1 1 o r 4 cs CN 1 1 單體 1 1 1 1 1 1 1 OO i-H 1 s CO t—( 1 LO r-H 1 1 1 結構單位(I I I ) 莫耳% C3 51.0 1 < < wo v〇 泛 CN ON 1' < l〇 CS) »〇 V〇 cn OJ cn cn cn 佘 單體 LO 1 s ld 1 S LD 1 LD 1 LO 1 S CO 1 % LO 1 LO 1 Ln 1 LO 1 LO 1 LO 1 Ln 1 啩 聰 結構單位(I I ) 1 莫耳% oo 〇 JO OO 寸 ON 40.0 OO ON oo 寸 o 49.9 49.7 單體 ϊ—i 1 s (M 1 CO 1 s 1 r—( 1 r—( 1 T-i 1 CO 1 1—( 1 r—( 1 寸 t-H 1 寸 r—H 1 rH 1 S 00 1 S 結構單位(I) 莫耳% o 寸 o 寸 t 1 对 〇 对 〇 寸 o 寸 v〇 oo r- 1 1 單體 卜 1 % 卜 1 S ο- Ι s Ο Ι S 00 1 艺 卜 1 I> 1 CT) 1 s o i-H 1 »—H r-1 1 艺 i—H i-H 1 艺 1 1 產率 (%) CN CN ON VO V〇 VO 03 Oi 寸 8 VO m vo jn CN 〔A〕成分 τ-Η 1 < OO 1 < CO 1 < 寸 1 < uo 1 < CD 1 < 卜 1 < 00 1 < 03 1 < o r-H 1 < i-H r-H 1 < i-H 1 CQ oo 1 CQ b成例1 I b成例2 I I合成例3 I |合成例4 1 I合成例5 I I合成例6 I 合成例7 I合成例8 I 1合成例9 I 〇 Ϊ 链 <Q 1合成例11| I合成例1 2| 合成例1 3 -50- 201202272 <敏輻射線性樹脂組成物之調製> Β〕化 抑制劑 對於使用於敏輻射線性樹脂組成物之調製的〔 合物、〔c〕敏輻射線性酸產生劑、〔D〕酸擴散 及〔E〕溶劑,如以下所示。 〔〔B〕化合物〕 各下述式(B-1 )〜(B-5 )所示化合物 【化2 2】The measurement results of the content ratio (mol%) of Mw/Mn and each structural unit in each polymer are shown in Table 2. [Synthesis Examples 3, 7 and 13] In Synthesis Example 1, the monomer (M-3) was put into a three-necked flask before polymerization, using the type and amount of the monomer shown in the following Table 1, and the synthesis example. In the same manner, polymers (A-3), (A-7) and (A-9) were obtained. The results of the yield (%), Mw, Mw/Mn of the obtained polymer and the content ratio (mol%) of each structural unit in each polymer are shown in Table 2 -48-201202272 [1® Polymerization Starter Moer % νη ίο υ-> to n υη VO Type CP < 2 PQ ♦-H < | AI bn| z ω < | AI bn| Z CQ Η-ί < AI BN 2 CQ H _ _ _ _ _ _ _ _ _ _ 1 00 Γ—i 1 ID τ-Η 1 1 1 Structural unit (III ) Moer % 沄民单单 LO 1 to 1 sm 1 S LO 1 LO 1 CD 1 S LO 1 in 1 S in 1 S Ln 1 LD 1 LO 1 LO 1 structural unit (II) Moer % 妄oo cn monomer_1 τ-Η 1 οα 1 S 00 1 1 I—i 1 ι—Η 1 T-1 1 CO 1 i—i 1 iH 1 Art inch r-H 1 inch rH 1 rH 1 00 1 Structure unit (I) Moer % 寸 inch inch to VO Bu Bu 1 1 Monomer Ο S Bu 1 S Bu 1 Ο Ι S 00 1 Bu 1 Ο Ι Oi 1 s O i—H 1 S i—H ι—Ί 1 s τ-Η r—1 1 s 1 1 Γ < 1 1~1 1 < CM 1 < 00 1 < inch 1 < LO 1 < CD 1 <t> 1 c 00 1 < 1 < o iH 1 < ?-1 iH 1 < τ-Η 1 CO CXI 1 cn 1 Synthesis Example i 1 1 Synthesis Example 2 1 1 Synthesis Example 3 1 丨 Synthesis Example 4 | 1 Synthesis Example 5 1 1 Synthesis Example 6 Synthesis Example 7 Synthesis Example 8 1 Synthesis Example 9 1 丨 Synthesis Example i ol 1 Synthesis Example i il 1 Synthesis Example 1 2| Synthesis Example 1 3 -49- 201202272 [CNfi Mw /Μη yr\ CO OO cn as cn ov〇cn 严— 5 1 1 1H ro r-^ 1—H CN r·^ CN Vi 1.46 Mw Ο g ν〇o § v〇O s \D 〇〇VO oooo CO VO o CO v〇oo r- o OO oo 〇 OO r- 〇v〇ov〇 Other Structural unit Mohr% 1 1 1 1 1 1 1 or 4 cs CN 1 1 Monomer 1 1 1 1 1 1 1 OO iH 1 s CO t—( 1 LO rH 1 1 1 Structural unit (III ) Molar % C3 51.0 1 << wo v〇泛CN ON 1' < l〇CS) »〇V〇cn OJ cn cn cn 佘 monomer LO 1 s ld 1 S LD 1 LD 1 LO 1 S CO 1 % LO 1 LO 1 Ln 1 LO 1 LO 1 LO 1 Ln 1 啩 结构 structural unit (II ) 1 莫 % oo 〇 JO OO inch ON 40.0 OO ON oo inch o 49.9 49.7 monomer ϊ — i 1 s (M 1 CO 1 s 1 r—( 1 r—( 1 Ti 1 CO 1 1—( 1 r—( 1 inch tH 1 inch r—H 1 rH 1 S 00 1 S structural unit (I) Mo % % o inch o Inch t 1 pair 〇 〇 inch o inch v〇oo r- 1 1 monomer 卜 1 % 卜 1 S ο- Ι s Ο Ι S 00 1 Arti 1 I> 1 CT) 1 so iH 1 »—H r -1 1 艺i-H iH 1 Art 1 1 Yield (%) CN CN ON VO V〇VO 03 Oi inch 8 VO m vo jn CN [A] component τ-Η 1 < OO 1 < CO 1 < ; inch 1 < uo 1 < CD 1 < 卜 1 < 00 1 < 03 1 < o rH 1 < iH rH 1 < iH 1 CQ oo 1 CQ b Example 1 I b Example 2 II Synthesis Example 3 I | Synthesis Example 4 1 I Synthesis Example 5 II Synthesis Example 6 I Synthesis Example 7 I Synthesis Example 8 I 1 Synthesis Example 9 I 〇Ϊ Chain <Q 1 Synthesis Example 11 | I Synthesis Example 1 2 | Synthesis Example 1 3 - 50 - 201202272 <Preparation of Sensitive Radiation Linear Resin Composition> ΒChemical Inhibitor For the modulation of the linear radiation resin composition for sensitive radiation, [c] sensitive radiation linear acid generator, [D] Acid diffusion and [E] solvent are as follows. [[B] compound] Each compound represented by the following formula (B-1) to (B-5) [Chemical 2 2]
(Β-2)(Β-2)
(Β-4) 〔〔C〕敏輻射線性酸產生劑〕 C-1:三苯基鎏九氟- η-丁烷磺酸酯 -51 - 201202272 〔〔D〕酸擴散控制劑〕 D-l : N-t-丁氧基羰基-4-羥基哌啶 D-2 :三正辛基胺 〔〔E〕溶劑〕 E-1 :丙二醇單甲基醚乙酸酯 E-2 :環己酮 E-3 : r -丁內酯 [實施例1] 混合聚合物(A-1) 100質量份、化合物(B-1) 7質 量份、以及溶劑(E-1 ) 1,700質量份、(E-2 ) 700質量 份及(E-3 ) 30質S份,將所得之混合液以孔徑200nm的 薄膜過濾器進行過濾,而調製出實施例1的敏輻射線性樹 脂組成物。 [實施例2〜16及比較例1〜4] 對於實施例1,各成分的種類及量如下$$ 3 &示以 外,與實施例1同樣地,調製出實施例2〜1 6及比較例1 〜4的敏輻射線性樹脂組成物。且,「- j表示未使用該 成分。 -52- 201202272 【cns 丨溶劑 質量份 1700/700/30 1700/700/30 1700/700/30 1700/700/30 1700/700/30 1700/700/30 1700/700/30 1700/700/30 1700/700/30 1700/700/30 1700/700/30 1400/3300 1400/3300 1400/3300 1400/3300 1400/3300 1700/700/30 1700/700/30 1700/700/30 1400/3300 ω 種類 E-1/E-2/E-3 E-1/E-2/E-3 E-1/E-2/E-3 E-1/E-2/E-3 E-1/E-2/E-3 E-1/E-2/E-3 E-1/E-2/E-3 Ε-1/Ε-2/Ε-3 Ε-1/Ε-2/Ε-3 E-1/E-2/E-3 E-1/E-2/E-3 E-l/E-2 E-l/E-2 E-l/E-2 E-l/E-2 E-l/E-2 E-1/E-2/E-3 E-1/E-2/E-3 E-1/E-2/E-3 Ε-1/Έ-2 Μ 19 藏 m 1 質量份 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 CN 1 1 (N Μ Q 種類 I 1 1 1 1 1 1 1 1 1 1 1 1 1 1 CM 1 Q r—1 1 Q 1 1 CM 1 Q 〔C〕酸產生劑 質量份 1 1 1 1 1 1 1 1 1 1 CN 1 1 1 1 1 1 卜 卜 1 種類 1 1 1 1 1 1 1 1 1 1 i—t 1 o 1 1 1 1 1 1 ι-Η 1 CJ t-H 1 U 1 <SQ 質量份 卜 卜 卜 卜 卜 卜 卜 卜 卜 卜 卜 cn CO cn CO 1 卜 卜 1 /—Λ 0Q 種類 r-H 1 CQ T—( 1 PQ T—H 1 CQ τ-Η 1 CQ r—1 1 CQ T—i 1 τ-Η 1 0Q (Μ 1 CQ CO 1 PQ 寸 1 DQ τ-Η 1 CQ CO 1 CQ LO 1 PQ CO 1 CQ LO 1 DQ LO 1 CQ 1 τ—i 1 PQ i—1 1 CQ 1 〔A〕成分 質量份 〇 〇 〇 〇 〇 ο 〇 Ο 1—^ o ο o 〇 1—H o 〇 o o 1—^ 0 1 « o h o 〇 種類 τ-Η 1 < (M 1 < CO 1 < 1 < LO 1 < CD 1 < ϊ> 1 < τ-Η 1 < 〇〇 1 < CO 1 < 寸 1 < 00 1 < ① 1 < o τ-Η 1 < r-H r—1 1 < i—1 1 C i-H 1 < rH 1 co CM 1 CO CO 1 < 實施例1 1實施例2 1 實施例3 實施例4 丨實施例5 I 實施例6 1實施例7 I 丨實施例8 1 實施例9 實施例1 0 實施例1 1 1實施例1 2| 實施例1 3 實施例1 4 1實施例1 5| 實施例1 6 比較例1 |比較例2 I 比較例3 比較例4 -53- 201202272 <敏輻射線性樹脂組成物的評估(1 ) > 對於實施例1〜Π及比較例1〜3的各敏輻射線性樹 脂組成物,藉由以下方法,進行對於感度、圖型形狀及 LWR之評估。這些評估結果如表4所示。 〔感度〕 使用於晶圓表面形成膜厚1,〇5〇Α的ARC66 (日產化 學工業製)膜之矽晶圓,將各組成物溶液於基板上使用 Clean truck ACT12 (東京electron製),藉由旋轉塗佈進 行塗佈,在加熱板上,以表4所示溫度進行60秒預燒烤 (PB ),形成膜厚0.09 之阻抗被膜。其後於阻抗被 膜上使用 Lithius Pro-i (東京 electron 製),將 TCX041 (JSR製)藉由旋轉塗佈進行塗佈,於加熱板上以90°C進 行PB,形成膜厚0.09/z m之上包覆膜。於如上述所形成 之被膜上,使用 Nikon製 ArF準分子雷射曝光裝置「 S610C」(開口數1.30),介著光罩圖型進行曝光。在如 表4所示溫度下進行60秒PEB後,藉由2.38質量%之四 甲基錢氫氧化物水溶液,在23°C進行60秒顯像,經水洗 並乾燥後形成正型光阻圖型。此時將介著欲得到直徑 0.044 m之線與間距圖型(1L1S )的光罩所得之圖型可 成爲直徑0.044 /zm之尺寸的曝光量作爲最適曝光量,該 最適曝光量(單位:mJ/cm2 )作爲感度。 〔圖型形狀(圖型之截面形狀)〕 -54- 201202272(Β-4) [[C]sensitive radiation linear acid generator] C-1: triphenylsulfonium nonafluoro-η-butanesulfonate-51 - 201202272 [[D] acid diffusion control agent] Dl : Nt -butoxycarbonyl-4-hydroxypiperidine D-2: tri-n-octylamine [[E] solvent] E-1: propylene glycol monomethyl ether acetate E-2: cyclohexanone E-3 : r - Butyrolactone [Example 1] 100 parts by mass of the mixed polymer (A-1), 7 parts by mass of the compound (B-1), and the solvent (E-1) 1,700 parts by mass, (E-2) 700 The mass fraction and (E-3) 30 mass S parts were filtered, and the obtained mixed liquid was filtered with a membrane filter having a pore size of 200 nm to prepare the radiation sensitive linear resin composition of Example 1. [Examples 2 to 16 and Comparative Examples 1 to 4] In the same manner as in Example 1, except that the types and amounts of the respective components were as follows: in the same manner as in the first embodiment, the examples 2 to 16 were compared and compared. The sensitive radiation linear resin composition of Examples 1 to 4. Further, "- j indicates that the component is not used. -52- 201202272 [cns 丨 Solvent mass fraction 1700/700/30 1700/700/30 1700/700/30 1700/700/30 1700/700/30 1700/700/ 30 1700/700/30 1700/700/30 1700/700/30 1700/700/30 1700/700/30 1400/3300 1400/3300 1400/3300 1400/3300 1400/3300 1700/700/30 1700/700/ 30 1700/700/30 1400/3300 ω Category E-1/E-2/E-3 E-1/E-2/E-3 E-1/E-2/E-3 E-1/E- 2/E-3 E-1/E-2/E-3 E-1/E-2/E-3 E-1/E-2/E-3 Ε-1/Ε-2/Ε-3 Ε -1/Ε-2/Ε-3 E-1/E-2/E-3 E-1/E-2/E-3 El/E-2 El/E-2 El/E-2 El/E -2 El/E-2 E-1/E-2/E-3 E-1/E-2/E-3 E-1/E-2/E-3 Ε-1/Έ-2 Μ 19 藏m 1 parts by mass 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 CN 1 1 (N Μ Q type I 1 1 1 1 1 1 1 1 1 1 1 1 1 1 CM 1 Q r-1 1 Q 1 1 CM 1 Q [C] acid generator mass parts 1 1 1 1 1 1 1 1 1 1 CN 1 1 1 1 1 1 Bub 1 Type 1 1 1 1 1 1 1 1 1 1 i-t 1 o 1 1 1 1 1 1 ι-Η 1 CJ tH 1 U 1 <SQ masses of indus, insignias, insults, instincts, ins and outs PQ T—H 1 CQ τ-Η 1 CQ r—1 1 CQ T—i 1 τ- 1 0Q (Μ 1 CQ CO 1 PQ inch 1 DQ τ-Η 1 CQ CO 1 CQ LO 1 PQ CO 1 CQ LO 1 DQ LO 1 CQ 1 τ—i 1 PQ i—1 1 CQ 1 [A] Component parts by mass 〇〇〇〇〇ο 〇Ο 1—^ o ο o 〇1—H o 〇oo 1—^ 0 1 « oho 〇Type τ-Η 1 < (M 1 < CO 1 < 1 < LO 1 < CD 1 <ϊ> 1 < τ - Η 1 < 〇〇 1 < CO 1 < 1 1 < 00 1 < 1 1 < o τ - Η 1 < rH r - 1 1 < i-1 1 C iH 1 < rH 1 co CM 1 CO CO 1 < r 1 1 embodiment 2 2 Example 3 Example 4 丨 Example 5 I Example 6 1 Example 7 I 丨Example 8 1 Example 9 Example 1 0 Example 1 1 1 Example 1 2| Example 1 3 Example 1 4 1 Example 1 5| Example 1 6 Comparative Example 1 | Comparative Example 2 I Comparative Example 3 Comparison Example 4 -53 - 201202272 <Evaluation of Sensitive Radiation Linear Resin Composition (1) > For each of the radiation sensitive linear resin compositions of Examples 1 to Π and Comparative Examples 1 to 3, the sensitivity was performed by the following method , pattern shape and evaluation of LWR. The results of these assessments are shown in Table 4. [Sensitivity] A laminate of ARC66 (manufactured by Nissan Chemical Industries, Ltd.), which has a thickness of 1 and a thickness of 5%, was used on the surface of the wafer, and each composition solution was applied to a substrate using Clean Truck ACT12 (manufactured by Tokyo Electron). The coating was applied by spin coating, and pre-baked (PB) was performed on a hot plate at a temperature shown in Table 4 for 60 seconds to form an impedance film having a film thickness of 0.09. Then, Lithius Pro-i (manufactured by Tokyo Electron Co., Ltd.) was used on the resist film, and TCX041 (manufactured by JSR) was applied by spin coating, and PB was applied to the hot plate at 90 ° C to form a film thickness of 0.09 / zm. The upper cover film. On the film formed as described above, an ArF excimer laser exposure apparatus "S610C" (number of openings: 1.30) made of Nikon was used for exposure through a mask pattern. After performing PEB for 60 seconds at the temperature shown in Table 4, the image was developed by a 2.38 mass% aqueous solution of tetramethyl hydroxyhydroxide at 23 ° C for 60 seconds, washed with water and dried to form a positive photoresist pattern. type. At this time, the pattern obtained by obtaining the mask of the line and pitch pattern (1L1S) having a diameter of 0.044 m can be an exposure amount of a diameter of 0.044 /zm as the optimum exposure amount, and the optimum exposure amount (unit: mJ) /cm2) as the sensitivity. [Shape shape (section shape of the pattern)] -54- 201202272
將上述感度之測定時所得的〇 · 〇44 μ m線與間距 之截面形狀以 Hitachi High-Technologies 公司製 4 8 00」進行觀察’評估圖型形狀。顯示矩形形狀時評 「A」(良好),顯示矩形以外的形狀時評估爲「B 不良)。 〔LWR ( line width roughness 線寬粗縫度)〕 對於上述最適曝光量,將於基板上的阻抗被膜上 成之0.044em(lLlS)圖型,使用測長 SEM (日立 所公司製之型號「CG4〇00」),由圖型上部進行觀 在圖型幅之任意點進行測定,該測定値之偏差値作爲 號而求得LWR (單位:nm)。該LWR越小越佳,3 以下時評估爲「A」(良好),超過3 . Onm時評估肩 」(不良)。 圖型 「S- 估爲The cross-sectional shape of the 〇·〇44 μm line and the pitch obtained at the time of measurement of the above sensitivity was observed by Hitachi High-Technologies Co., Ltd. 4800 00' to evaluate the pattern shape. When the rectangular shape is displayed, "A" (good) is evaluated, and when the shape other than the rectangle is displayed, it is evaluated as "B bad". [LWR (line width roughness)] For the above optimum exposure amount, the impedance film on the substrate will be formed. The 0.044em (lLlS) pattern of the upper layer is measured by the length measurement SEM (model "CG4〇00" made by Hitachi, Ltd.), and the measurement is performed at any point of the pattern.値 Find the LWR (unit: nm) as the number. The LWR is as small as possible. When it is less than 3, it is evaluated as "A" (good), and when it is more than 3. Onm is evaluated as "poor". Figure "S- Estimated as
所形 製作 察, 3訊 .Onm ;Γ B 201202272Shaped production inspection, 3 news. Onm; Γ B 201202272
[表4] PB 酿 (°C) PEB (°C) 感度 (mJ /cm2) 圖型形狀 LWR 數値 (nm) 評估 實施例1 110 140 40 A 2.3 A 實施例2 110 140 42 A 2.4 A 實施例3 110 140 38 A 2.4 A 實施例4 110 140 44 A 2.5 A 實施例5 110 140 42 A 2.4 A 實施例6 110 140 37 A 2.2 A 實施例7 110 140 42 A 2.4 A 實施例8 110 140 40 A 2.3 A 實施例9 110 140 40 A 2.4 A fl施例1 0 110 140 40 A 2.4 A 魅例1 1 110 140 40 A 2.6 A 比較例1 110 140 38 B 3.8 B 比較例2 110 140 40 B 3.3 B 比較例3 110 140 33 B 3.4 B 由表4之結果得知,實施例1〜1 1的敏輻射線性樹脂 組成物與比較例1〜3的敏輻射線性樹脂組成物相比較, 於ArF曝光中,形成LWR較小,且具有持有矩形截面的 優良圖型形狀之光阻圖型。 <敏輻射線性樹脂組成物的評估(2 ) > 對於實施例1 2〜1 6及比較例4的各敏輻射線性樹脂 組成物,藉由以下方法,準行對邊緣粗糙度及解像度之評 估。彼等評估結果如表5所示。 〔感度〕 -56- 201202272 在東京electron製之「Cl ean truck ACT-8」内,於砂 晶圓上以旋轉塗佈敏輻射線性樹脂組成物後,在如表5所 示溫度下進行90秒PB ’形成膜厚60nm之阻抗被膜。其 後,使用簡易型電子線描繪裝置(日立製作所公司製之型 式「HL800D」’輸出;5〇KeV,電流密度;5.0安培/ cm2 )’於上述形成之阻抗被膜以電子線照射。電子線之照射 後,在如表5所示溫度下進行9 0秒P E B。其後,使用 2.38%四甲基銨氫氧化物水溶液,在23 t進行1分鐘之經 攪煉法並顯像後,以純水水洗並乾燥,形成光阻圖型。此 時將由線幅1 5 Onm之線部、與鄰接的線部所形成之間隔 爲1 50nm之間距部(即爲溝)所成的線與間距圖型( 1 L 1 S )’形成1對1的線幅之曝光量作爲最適曝光量,將 該最適曝光量作爲感度(單位:μ C/cm2 )。 〔邊緣粗糙度〕 將設計線幅150nm的線與間距圖型(1L1S )的線圖 型以半導體用掃描電子顯微鏡(高分解能FEB測長裝置 之商品名「S-9220」、日立製作所公司製)進行觀察。對 於經觀察之形狀,如圖1及圖2所示,由沿著形成於矽晶 圓1上之阻抗被膜的線部2之橫側面2 a所生成的凹凸最 顯著的地方的線幅、與設計線幅15〇nm之差「ACD」算出 邊緣粗糙度(單位:nm)。 〔解像度〕 -57- 201202272 對於線與間距圖型(1L ] S ),由最適曝光量所解 的線圖型之最小線幅作爲解像度(單位:nm)。 像出 [表5] PB 溫度 (°C) PEB 溫度 (°C) 感度 /cm2) 奈米邊緣粗 糙度(nm) 解像度 (nm) 實施例1 2 130 150 50 14 60 實施例1 3 130 140 49 13 60 實施例14 130 140 50 13 60 實施例1 5 130 140 49 12 60 實施例1 6 130 140 48 14 70 比較例i 130 140 50 17 80 由表5的結果得知,實施例1 2〜1 6的敏輻射線 脂組成物與比較例1的敏輻射線性樹脂組成物相比較 形成對電子線爲有效感應,奈米邊緣粗糙度較小,且 度亦優良的光阻圖型。 以上如表4及表5的結果所示,本發明的敏輻射 樹脂組成物爲在ArF等紫外線及電子線等荷電粒子線 意情況下,LWR或邊緣粗糙度受到抑制,可形成具 形良好之圖型形狀,解像度亦優良的光阻圖型。 性樹 ,可 解像 線性 之任 有矩 產業上可利用性 所謂本發明之敏輻射線性樹脂組成物爲可形成 較小’且圖型形狀優良的光阻圖型。因此,本發明的 射線性樹脂組成物對於可能作爲形成在今後預想可進 LWR 敏輻 一步 -58- 201202272 微細化的半導體裝置製造用之化學增幅型阻抗爲有用。 【圖式簡單說明】 [圖1 ]由上方觀察線圖型時的模式平面圖。 [圖2]線圖型形狀之模式截面圖。 【主要元件符號說明】 1 :基材 2 :光阻圖型 2a _·光阻圖型之橫側面 -59-[Table 4] PB Brewing (°C) PEB (°C) Sensitivity (mJ / cm2) Pattern Shape LWR Number 値 (nm) Evaluation Example 1 110 140 40 A 2.3 A Example 2 110 140 42 A 2.4 A Implementation Example 3 110 140 38 A 2.4 A Example 4 110 140 44 A 2.5 A Example 5 110 140 42 A 2.4 A Example 6 110 140 37 A 2.2 A Example 7 110 140 42 A 2.4 A Example 8 110 140 40 A 2.3 A Example 9 110 140 40 A 2.4 A fl Example 1 0 110 140 40 A 2.4 A Case 1 1 110 140 40 A 2.6 A Comparative Example 1 110 140 38 B 3.8 B Comparative Example 2 110 140 40 B 3.3 B Comparative Example 3 110 140 33 B 3.4 B From the results of Table 4, the radiation sensitive linear resin compositions of Examples 1 to 1 were compared with the radiation sensitive linear resin compositions of Comparative Examples 1 to 3, and exposed to ArF. Among them, a photoresist pattern having a small LWR and having an excellent pattern shape having a rectangular cross section is formed. <Evaluation of Sensitive Radiation Linear Resin Composition (2) > For each of the radiation sensitive linear resin compositions of Examples 1 2 to 16 and Comparative Example 4, the edge roughness and the resolution were quasi-aligned by the following method Evaluation. Their evaluation results are shown in Table 5. [Sensitivity] -56- 201202272 In the "Clean truck ACT-8" manufactured by Tokyo Electron, the radiation-sensitive linear resin composition was spin-coated on a sand wafer, and then subjected to a temperature of 90 seconds as shown in Table 5. PB 'forms an impedance film having a film thickness of 60 nm. Then, a simple electron beam drawing device (type "HL800D" output manufactured by Hitachi, Ltd.; 5 〇 KeV, current density; 5.0 amp / cm 2 ) was used to irradiate the resist film formed as described above with electron beams. After the irradiation of the electron beam, P E B was performed for 90 seconds at the temperature shown in Table 5. Thereafter, a 2.38% tetramethylammonium hydroxide aqueous solution was used, and after 1 minute of stirring at 23 t and developed, it was washed with pure water and dried to form a photoresist pattern. At this time, a line and a pitch pattern (1 L 1 S )' formed by the line portion of the line width of 15 Onm and the interval formed by the adjacent line portion being 1 50 nm (that is, the groove) form a pair. The exposure amount of the line width of 1 is taken as the optimum exposure amount, and the optimum exposure amount is taken as the sensitivity (unit: μ C/cm 2 ). [Edge Roughness] The line pattern of the line and the pitch pattern (1L1S) of the design line width of 150 nm is a scanning electron microscope for semiconductors (trade name "S-9220" of the high-decomposition energy FEB length measuring device, manufactured by Hitachi, Ltd.) Observe. As shown in FIG. 1 and FIG. 2, the shape of the observed shape is the width of the most prominent portion of the unevenness generated along the lateral side 2a of the line portion 2 of the resist film formed on the erbium wafer 1, and The edge roughness (unit: nm) was calculated by designing the difference "ACD" of the line width of 15 〇 nm. [Resolution] -57- 201202272 For the line and pitch pattern (1L ] S ), the minimum line width of the line pattern solved by the optimum exposure amount is taken as the resolution (unit: nm). Fig. 5 PB temperature (°C) PEB temperature (°C) sensitivity/cm2) Nano edge roughness (nm) Resolution (nm) Example 1 2 130 150 50 14 60 Example 1 3 130 140 49 13 60 Example 14 130 140 50 13 60 Example 1 5 130 140 49 12 60 Example 1 6 130 140 48 14 70 Comparative Example i 130 140 50 17 80 From the results of Table 5, Example 1 2~1 The sensitive radiation grease composition of 6 is compared with the radiation sensitive linear resin composition of Comparative Example 1 to form a photoresist pattern which is effective for the electron beam, has a small nanoedge roughness, and is excellent in degree. As shown in the results of Tables 4 and 5, the radiation-sensitive resin composition of the present invention has a LWR or edge roughness suppressed in the case of charged particles such as ultraviolet rays and electron beams such as ArF, and can be formed into a good shape. Pattern shape, excellent resolution of the resist pattern. Sex tree, solvable linearity, moment, industrial availability, the sensitive radiation linear resin composition of the present invention is a photoresist pattern which can be formed into a small size and has a good shape. Therefore, the ray-based resin composition of the present invention is useful as a chemically amplified type of resistance for forming a semiconductor device which is expected to be able to be made into a finer LWR sensitization step in the future. [Simple description of the drawing] [Fig. 1] A plan view of the line pattern when viewed from above. [Fig. 2] A schematic sectional view of a line pattern shape. [Description of main component symbols] 1 : Substrate 2 : Photoresist pattern 2a _· Horizontal side of photoresist pattern -59-
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JP5387546B2 (en) * | 2010-11-25 | 2014-01-15 | 信越化学工業株式会社 | Polymer compound, positive resist material and pattern forming method |
JP5802385B2 (en) * | 2010-12-08 | 2015-10-28 | 東京応化工業株式会社 | Resist composition and resist pattern forming method |
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US9057948B2 (en) | 2011-10-17 | 2015-06-16 | Tokyo Ohka Kogyo Co., Ltd. | Resist composition for EUV or EB, and method of forming resist pattern |
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JP5699943B2 (en) * | 2012-01-13 | 2015-04-15 | 信越化学工業株式会社 | Pattern forming method and resist material |
JP2014206686A (en) * | 2013-04-15 | 2014-10-30 | 富士フイルム株式会社 | Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, actinic ray-sensitive or radiation-sensitive film, manufacturing method of electronic device and electronic device |
JP6428495B2 (en) * | 2014-08-12 | 2018-11-28 | 信越化学工業株式会社 | Positive resist material and pattern forming method using the same |
JP7420002B2 (en) * | 2020-01-08 | 2024-01-23 | 信越化学工業株式会社 | Positive resist material and pattern forming method |
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