TW201200284A - Method for manufacturing glass substrate used for forming through-electrode of semiconductor device - Google Patents
Method for manufacturing glass substrate used for forming through-electrode of semiconductor device Download PDFInfo
- Publication number
- TW201200284A TW201200284A TW100113793A TW100113793A TW201200284A TW 201200284 A TW201200284 A TW 201200284A TW 100113793 A TW100113793 A TW 100113793A TW 100113793 A TW100113793 A TW 100113793A TW 201200284 A TW201200284 A TW 201200284A
- Authority
- TW
- Taiwan
- Prior art keywords
- glass substrate
- laser light
- excimer laser
- glass
- hole
- Prior art date
Links
- 239000011521 glass Substances 0.000 title claims abstract description 202
- 239000000758 substrate Substances 0.000 title claims abstract description 197
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 36
- 238000000034 method Methods 0.000 title claims abstract description 23
- 239000004065 semiconductor Substances 0.000 title claims abstract description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 21
- 230000001678 irradiating effect Effects 0.000 claims abstract description 14
- 229910052681 coesite Inorganic materials 0.000 claims abstract description 12
- 229910052906 cristobalite Inorganic materials 0.000 claims abstract description 12
- 230000003287 optical effect Effects 0.000 claims abstract description 12
- 229910052682 stishovite Inorganic materials 0.000 claims abstract description 12
- 229910052905 tridymite Inorganic materials 0.000 claims abstract description 12
- 230000004907 flux Effects 0.000 claims description 25
- 239000011651 chromium Substances 0.000 claims description 12
- 229910052804 chromium Inorganic materials 0.000 claims description 5
- 239000010931 gold Substances 0.000 claims description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 8
- 239000000377 silicon dioxide Substances 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 42
- 238000012545 processing Methods 0.000 description 14
- 238000005516 engineering process Methods 0.000 description 9
- 239000000463 material Substances 0.000 description 8
- 239000011347 resin Substances 0.000 description 8
- 229920005989 resin Polymers 0.000 description 8
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical group [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 5
- 239000010453 quartz Substances 0.000 description 5
- 239000011734 sodium Substances 0.000 description 5
- 230000009467 reduction Effects 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 2
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 210000000078 claw Anatomy 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 229910052700 potassium Inorganic materials 0.000 description 2
- 239000011591 potassium Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 241000270666 Testudines Species 0.000 description 1
- 238000002679 ablation Methods 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 238000004040 coloring Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000005357 flat glass Substances 0.000 description 1
- 239000005350 fused silica glass Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000009830 intercalation Methods 0.000 description 1
- 230000002687 intercalation Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000005297 pyrex Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
- H01L23/15—Ceramic or glass substrates
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
- B23K26/382—Removing material by boring or cutting by boring
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/486—Via connections through the substrate with or without pins
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Laser Beam Processing (AREA)
- Re-Forming, After-Treatment, Cutting And Transporting Of Glass Products (AREA)
- Glass Compositions (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010097226A JP2013144613A (ja) | 2010-04-20 | 2010-04-20 | 半導体デバイス貫通電極形成用のガラス基板の製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW201200284A true TW201200284A (en) | 2012-01-01 |
Family
ID=44834122
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW100113793A TW201200284A (en) | 2010-04-20 | 2011-04-20 | Method for manufacturing glass substrate used for forming through-electrode of semiconductor device |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP2013144613A (fr) |
| TW (1) | TW201200284A (fr) |
| WO (1) | WO2011132601A1 (fr) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI669279B (zh) * | 2014-10-03 | 2019-08-21 | Nippon Sheet Glass Co., Ltd. | 附貫通電極之玻璃基板的製造方法及玻璃基板 |
| TWI756930B (zh) * | 2015-02-03 | 2022-03-01 | 日商大日本印刷股份有限公司 | 雷射用遮罩、蒸鍍遮罩之製造方法、蒸鍍遮罩製造裝置及有機半導體元件之製造方法 |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2754524B1 (fr) | 2013-01-15 | 2015-11-25 | Corning Laser Technologies GmbH | Procédé et dispositif destinés au traitement basé sur laser de substrats plats, galette ou élément en verre, utilisant un faisceau laser en ligne |
| EP2781296B1 (fr) | 2013-03-21 | 2020-10-21 | Corning Laser Technologies GmbH | Dispositif et procédé de découpe de contours à partir de substrats plats au moyen d'un laser |
| US11556039B2 (en) | 2013-12-17 | 2023-01-17 | Corning Incorporated | Electrochromic coated glass articles and methods for laser processing the same |
| US9517963B2 (en) * | 2013-12-17 | 2016-12-13 | Corning Incorporated | Method for rapid laser drilling of holes in glass and products made therefrom |
| KR101406207B1 (ko) * | 2014-04-04 | 2014-06-16 | 영백씨엠 주식회사 | 브러시리스 직류 진동모터 |
| JP6533644B2 (ja) * | 2014-05-02 | 2019-06-19 | 株式会社ブイ・テクノロジー | ビーム整形マスク、レーザ加工装置及びレーザ加工方法 |
| KR102445217B1 (ko) | 2014-07-08 | 2022-09-20 | 코닝 인코포레이티드 | 재료를 레이저 가공하는 방법 및 장치 |
| CN107073642B (zh) | 2014-07-14 | 2020-07-28 | 康宁股份有限公司 | 使用长度和直径可调的激光束焦线来加工透明材料的系统和方法 |
| EP3274306B1 (fr) | 2015-03-24 | 2021-04-14 | Corning Incorporated | Découpe au laser de compositions de verre d'affichage |
| WO2017038075A1 (fr) * | 2015-08-31 | 2017-03-09 | 日本板硝子株式会社 | Procédé de production de verre présentant une structure fine |
| JP7066701B2 (ja) | 2016-10-24 | 2022-05-13 | コーニング インコーポレイテッド | シート状ガラス基体のレーザに基づく加工のための基体処理ステーション |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4405761B2 (ja) * | 2002-07-24 | 2010-01-27 | 日本板硝子株式会社 | レーザ加工用ガラス |
| DE112004000123T5 (de) * | 2003-01-10 | 2005-11-10 | Nippon Sheet Glass Co., Ltd. | Glas für die Laserbearbeitung |
| JP2005088045A (ja) * | 2003-09-17 | 2005-04-07 | Sumitomo Heavy Ind Ltd | レーザ穴あけ方法及び装置 |
-
2010
- 2010-04-20 JP JP2010097226A patent/JP2013144613A/ja active Pending
-
2011
- 2011-04-14 WO PCT/JP2011/059318 patent/WO2011132601A1/fr active Application Filing
- 2011-04-20 TW TW100113793A patent/TW201200284A/zh unknown
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI669279B (zh) * | 2014-10-03 | 2019-08-21 | Nippon Sheet Glass Co., Ltd. | 附貫通電極之玻璃基板的製造方法及玻璃基板 |
| TWI756930B (zh) * | 2015-02-03 | 2022-03-01 | 日商大日本印刷股份有限公司 | 雷射用遮罩、蒸鍍遮罩之製造方法、蒸鍍遮罩製造裝置及有機半導體元件之製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2013144613A (ja) | 2013-07-25 |
| WO2011132601A1 (fr) | 2011-10-27 |
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