TW201142982A - Substrate support structure, clamp preparation unit, and lithography system - Google Patents

Substrate support structure, clamp preparation unit, and lithography system Download PDF

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TW201142982A
TW201142982A TW100105385A TW100105385A TW201142982A TW 201142982 A TW201142982 A TW 201142982A TW 100105385 A TW100105385 A TW 100105385A TW 100105385 A TW100105385 A TW 100105385A TW 201142982 A TW201142982 A TW 201142982A
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Taiwan
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substrate
liquid
edge
substrate support
distance
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TW100105385A
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Chinese (zh)
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TWI582894B (en
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Jong Hendrik Jan De
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Mapper Lithography Ip Bv
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures

Abstract

A substrate support structure (13) for clamping a substrate (12) on a surface (16) by means of a capillary layer of a liquid (11). The surface has an outer edge (28) and includes one or more substrate supporting elements (17) for receiving the substrate to be clamped, wherein the one or more substrate supporting elements are arranged to provide support for the substrate at a plurality of support locations. The substrate support structure further includes a sealing structure (21) circumscribing the surface and having a top surface or edge (22, 24, 26) forming a sealing rim. A distance (c) between the outer edge of the surface and an outermost of the support locations is greater than a distance (d) between the outer edge and the sealing rim.

Description

201142982 六、發明說明： 【發明所屬之技術領域】 本發明是有關用於將基板夾持於其表面上的基板支撐 結構。 【先前技術】 將基板（例如是晶圓）固定於基板支撐結構（例如是 晶圓檯）之表面上的夾持作用在半導體產業中係為習知， 特別是在微景彡“中。纟此種微影系統中’被夾持之基板 是藉由曝露至投射光子或帶電粒子（例如是離子或電子） ，將圖案成形。夾持作用係容許基板表面之㈣部位得到 高精確度的圓案成形結果。 -種夾持作用的方法是藉由吸取介於基板與基板支撐 結構之間的空氣，#即是藉由於基板與基板切結構之間 產生真空作用。然％ ’倘若被夾持之基板是在真空環境内 被處理時，將無法有效使㈣方法。存在用以將基板央持 於真空環境中的不同其他解決方案，例如是藉由機電式夾 持作用 '然而，由於被用來夹持至帶電粒子束上之電場合 :到不必要的影響’以上解決方案並不適合使用於帶電： 子之微影作用。 7 另外一種夾持作用的方法Β &丄^ '用的方法疋藉由使用液體層來避免以 上問題發生，液體層被配置用 ^ ^ ^ ^ 5丨出毛細管作用力，使 付基板^被μ於基^撐結構之表面上。 體到達基板之表面的附著力， f，液 力r方面，基板支撐結 201142982 構將生成周圍延伸液體表面，以内凹之方式延伸於以上二 表面之間。已成形之内凹液體表面易於維持其形狀，甚至 倘若作用力被施加，用以從基板支撐結構表面處來將基板 移除時。液體層進一步提供加強介於基板與基板支撐結構 表面中間之受熱接觸狀況之目的，使得基板能夠接受較高 的熱負載’且不致承受到過度的收縮或膨脹作用。 然而，使用液體夾層之夾持作用遭遇到一些缺點。夾 持液體層的蒸發將導致夾持作用力經過一段時間後會造成 劣化，因而將夾持作用的使用壽命限制住β從液體層洩漏 出去的蒸氣對於許多應用而言，亦是一項問題，例如是微 影加工程序’其中被夾持之基板被導入至真空環境内，以 及從蒸氣中洩漏至真空室内的水分子係為對於微影加工程 序有害之污染物。來自夾持液體之蒸氣的凝結作用亦將產 生問題，導致夾持作用的使用壽命減少。 【發明内容】 本發明之一項目的是提供用於將基板夾持住之機構， 用以提出在先前方法中所遭遇到之問題。至此，本發明提 供藉由液體毛細管層之作用，用以將基板夾持於表面上的 基板支撐結構。 表面具有外部邊緣’且包括一個或更多個用於將待夾 持之基板接收的基板支撐元件，其中一個或更多個基板支 樓元件被配置用以在複數的支撐位置處提供支撐作用予基 板。基板支撐結構進一步包括與表面外切以及具有形成密 201142982 封邊緣之頂部表面或邊緣的密封結構。介於表面之外部邊 緣與最外側支撐位置之間的距離是大於介於外部邊緣與密 封邊緣之間的距離。 基板支撐結構可以;^皮設計成使得介於密#邊緣與最外 侧支撐位置之間的距離是大於介於相鄰接支撐位置：間的 最大距離。在一些實施例中，介於表面之外部邊緣與最外 側支樓位置中間的距離是大於或等於介於外部邊緣與密封 邊緣中間之距離的二倍。在—些實施例中，介於密封邊緣 與最外側支撐位置之間的距離是大於或等於介於相鄰接支 撐位置之間之最大距離的二倍。在一些實施例中，介於表 面之外部邊緣與最外側支撐位置之間的距離是大於或等於 介於相鄰接支樓位置之間之最大距離的二倍。密封邊緣可 以被配置成大致上是與基板支撐元件之頂部同高。 一個或更多個基板支撐元件係在複數 供支樓作用予基板，該支樓位置収配置成具=== 之規則圖案，且介於密封邊緣與最接近密封邊緣之支撐位 置之間的距離可以被配置成使得其本身能夠超過以上節 距。 基板支撐結構的接收表面進一步包含具有不同毛細管 位能之部位’用以於夾持期間，在液體失持層内導引出預 設的毛細管流。具有不同毛細管位能之部位的至少一部份 是被提供於基板支撐結構之接收表面的周圍處。在一些實 施例中，於液體夾持層内之預設毛細管流是在朝向液體夾 持層之周圍的方向上，以及在一些實施例巾，於液體炎持 6 201142982 層内之預設毛細管流的至少—部份係發生於在基板支標結 構之表面内的一個或更多個溝槽中。 帶有不同毛細管位能之部位可以具有不同的高度和/或 用於夾持液體的不同親和力和/或不同的表面處理或表面材 料或表面被覆層’帛以提供不同的毛細f位能。基板支樓 結構之表面可以包含具有較低毛細管位能的輕，此部位 則是位於在-個或更多個預設位置處之基板支#結構表面 的周圍處’同日寺，大部份的基板支撐結構表面之周圍處則 是具有較高的毛細管位能。 具有較低毛細管位能之表面部位的至少一部份可以是 -個或更多個溝槽之樣式，且一個或更多個溝槽可以包含 -個或更多個-曲部位。在一些實施例中，—個或更多個 溝槽的至少-部份可以是螺旋之樣式，以及在—些實施例 中，-個或更多個溝槽的至少一部份是具有婉挺樣式。一 個或更多個溝槽的表面區域可以被配置用來蓋住基板支樓 結構之小於25%部位。在一些實施例中，一個或更多個溝 槽的表面區域被平均分佈至基板支撐結構的表面之上方。 緣溝可以被提供於接收表面的周圍，緣溝包含位於 =面之周圍處的較高段差部位。介於基板支撐元件之頂部 …緣溝之奴差部位之間的高度差是大於或等於基板支 揮凡件之高度的二倍。 妾收表面亦疋可以具有用於形成複數隔間之凸起結 一且凸起結構之高度是小於基板支撐元件之高度。在一 實鈿例中’介於凸起結構與基板支撐元件之間的高度差 201142982 是至少】.5微米β 基板支撐結構亦是可以包括用於存放儲存槽液體之液 體儲存槽，且與具有基板支撐結構接收表面之儲存槽相連 接的蒸氣傳送系統係用以將來自儲存槽液體之蒸氣提供至 毛細官層。儲存槽是於接收表面之下方延伸，且儲存槽可 以包含具有較大部位和較小部位之孔穴’其中較大部位被 安置於接收表面之下方，較小部位則是從接收表面之周圍 處往外延伸。用於將儲存槽液體存放至儲存槽内之體積是 大於液體毛細管層之體積。在一些實施例中，儲存槽是可 以從接收表面處分離。 基板支撐結構亦是可以包括用於將在接收表面周圍處 之液體移除的液體清除系統。液體清除系統包括氣體分配 系統。氣體分配系統則包含至少一用於提供氣體之氣體入 口，以及至少一用於移除氣體之氣體出口。氣體分配系統 是具有若干相對於彼此而位於等距離位置處之氣體入口和 氣體出口。 在另外一項觀點中，本發明是有關基板支撐結構和被 夾持於基板支撐結構表面上之基板的組合，其中基板是藉 由液體毛細管層之作用而被夾持於基板支撐結構表面上， 表面包含一個或更多個基板支撐元件，用以接收基板和被 配置用來提供支撐作用予在一個或更多個支撐位置處之基 板。基板支樓結構進一步包含沿著表面周圍之密封結構， 以及具有組成密封邊緣之頂部表面或邊緣。介於密封邊緣 與最外側支撐位置之間的距離是足夠大，使得在基板之爽 8 201142982 寺程中基板此夠往下·彎曲，用以減小或消除介於密封 邊緣與基板之底部表面中間的間隙。 在基板之夾持期間，間隙可以被減小，使得基板之底 部表面能夠碰觸到密封邊緣。在一些實施例中，密封邊緣 大致上是與基板支撐元件之頂部同高。以上組合可以被配 置成使彳于介於密封邊緣與最外側支撐位置之間的距離是大 於或等於介於相鄰接支撐位置之間之最大距離的二倍。在 一些實施例中，介於毛細管液體層周圍與最外側支撐位置 之間的距離是大於介於毛細管液體層周圍與密封邊緣之間 的距離。 接收表面‘進一步包含具有不同毛細管位能之部位，用 以於失持之過程中，在液體失持層内導引出預設的毛細管 /；，L在些貫施例中，於液體夾持層内之預設毛細管流是 在朝向液體夾持層之周圍的方向上，以及在一些實施例 中’於液體失持層内之預設毛細管流的至少一部份係發生 於在基板支撐結構之表面内的一個或更多個溝槽中。 目前所揭示之本發明原理顯然是可以採用不同方式來 【實施方式】 乂下内谷係為本發明之不同實施例的描述内容，僅提 供作為應用實例並參考下列圖式。 圖1為概略說明介於第一基板2 (例如是晶圓）與第二 基板3 (例如是類似晶圓檯之基板支撐結構）之間之液體層 201142982 1的剖面視圖。適合用於與微影 a . 狂斤有關之應用的液黯 疋水。包含第一基板2和第_ 1 從體 一盆』 乐—基板3之配置方式，其中第 一基板和第二基板是藉由液體 Λα s 1之作用而被夾持在一 液體層進一步被稱為夾持層 .^ 穴竹層在如同圖1所示之方式 中，將於以下内容中被稱為，，失持器”。 :於編的厚度通常是非常小，且在此種實例中， 毛細官作用力有其重要性， # 、 《持層亦是可以被稱為毛細管 S 基板2和第二基板3分別具有大致上是平坦的表 6 ;,於第基板2和第二基板3之相對置表面5、6 ^間的標示距離是以高度h來表示。夹持層i具有亦被稱 為凹液面之外部液體表面8,由於液體至第—基材2和第二 基材3之附著連接作用’以上外部液體表面通常是内凹的 形狀。在將水用來作為夾持液體之應用實例中’由水分子 偶極配置方式所產生的凡得瓦力會導致分子彼此能夠相 互連接（表面張力）’以及連接至其他表面（附著力）。 外部液體表面8之凹度（亦被稱為凹液面曲率）係依 據介於外部液體表面8與第-基板2之表面5中間的接觸 角度，以及依據介於外部液體表面8與第二基板3之表面6 中間的接觸角纟。以上個別不同的接觸角度則是依據在夾 持層1内所使用之液體，以及依據以上二基板2、3之材料 拴質。此外，凹液面曲率提供橫過外部液體表面8之壓力 差。較高的凹液面曲率（亦即是更加内凹之外部表面）可 以提供較大的壓力差。有關用以將二個具有大致上是平坦 相對置表面之結構握持在一起的夾持層之更加詳細描述内 201142982 容是於國際專利申請案WO 2009/01 1574中被提供，其全部 内容併於此以作為參考。 圖2A和圖2B概略表示出適合用於將基板12夹持住之 基板支撐結構13的剖面視圖與上視圖’其中基板支撐結構 13是藉由夾持層n之作用而以參考圖丨所描述之方式來將 基板12夾持住。基板支撐結構13包含具有—個或更多個 基板支撐元件17之表面16。 基板支撐tl件17被配置用以界定和維持介於基板12 與基板支撐結構13之間的距離。以上這些基板支撐元件17 可以是如圖2A、圖2B中所示之結節部位的樣式，或是— :或更多個隆起部位。另外或是或者，若干間隔件（例如 =玻璃顆粒、二氧化⑦顆粒或是類似顆粒）可以被均句地 分散至表面16之上方’用以作為基板支撐元件。 基板支撐元件17被配置用以減少藉由夾持層丨丨所施 加之爽持作用力所產生的基板變形現象。基板支撐元件Η 的存在例如是可以減少基板彎曲現象之發生。此外，基板 支撐元件17的存在可以減少藉由在基板12之背面15 :的 粒子所產生之污染影響。 基板支撐元件Γ/之節距係依據設定用於藉由夾持層之 ^持作用力所導致之最大基板偏向量的需求。每—個基板 2兀件Π之接觸表面使得該接觸表面心承受在所施加 广下的變形和/或破壞。接觸元件之邊緣以是圓角為 以於例如是潔淨加工之過程中，減少粒子污染 -性。具有圓形接觸區域之結節部位的一般直徑值是 11 201142982 在10微米到500微米之範圍内，例如是·微米。若干結 節部位的-般節距值是在i毫米到5毫米之範圍内，例如 是3毫米。 基板支撐tl件1 7之標稱高度係決定介於基板丨2與基 板支撐結構13之表面16之間的距離。標稱高度進一步對 於可得到之炎持壓力是具有影響。基板支禮㈣17之標稱 高度的選擇通常是介於所需夾持壓力與粒子所造成扭曲之 可能危險性中間的交換結果。 較低的高度通常會增加可得到之灸持壓力。較大的夹 持壓力通常會改善夾持器的穩定性。另外，較低的標稱高 度將減少夾持層之厚度，以及隨後改善介於基板Μ與基板 支#結構1 3之間的熱傳狀況。 另外-方面，雖然在真空系統中並未存在有許多迷走 粒子，於基板支禮結構上所出現之這些迷走粒子將導致嚴 重的局部不穩定狀況發生，特別是倘若這些迷走粒子的尺 :二：基板支撐疋件Π之標稱高度。於是，較高的高度將 月匕夠減少面對以上負面衝擊之機會。 可以被改變來得到所需夾持壓力的其他參數 12之材料性質、基板 土板 土饭义存口構13之表面16的材料性質、 表面16之表面區域、基板支撐元件17之形狀和數目、某 板支樓元件之節距，以及被用央也赤忠姓麻 成夾持層11之液體種 類作為特定的解決方案，基板12和基板支撐結構。之 一個或二個接觸表面可以被施加表面處理， JLJ. 4-iL to 4疋包覆一層 材科m響介於組成夾持層^液體與_接觸表面 12 201142982 中間的接觸角度。 &才反支樓結構13之表面μ係與緣溝或溝槽19或是類 似、’Ό構外切。在加工程序中，緣溝1 9是被用來建構夹持器。 為了達到此項目的’緣溝1 9可以被連接至液體調節系統和 /或氣體調節系統。在建構夾持器之加工程序中，一個或更 多個加工動作是經由緣溝19來施行，其中包括供應夾持液 體、β除過多液體和分配乾燥氣體。氣體分配動作以是包 括Α著基板支樓結構之外部表面周圍來將乾燥氣體分配出 去為較適宜，用以進一步清除過多的夾持液體來建構夾持 益。適且使用於氣體分配動作中之乾燥氣體包括氮氣和類 似氬氣之惰性氣體，雖燃其他氣體亦是可以被採用。 液體調節系統被構形用以將液體供應至基板支撐結構 表面和/或在將基板安置於液體層的頂部上之後，用以將在 基板之下方的液體清除掉而形成夾持層關於藉由使用 外部液體供應和採用緣溝之液體清除系統來形成夾持層的 進:步詳細描述内容係在美國專利中請案12/7G8,543中加 以描述，其全部内容併於此以作為參考。 在緣溝19之形狀中，緣溝19是被密封結構η限制住， 用以將來自夾持層η和緣溝19之流到周邊環境内的基氣 2漏量限制住。密封結構21之頂部側邊以具有與基板支 寻疋件17之標稱高度相等的高度為較適宜。 如同先前所提及之内容’緣溝19是與氣體分配系統相 妾觸，例如是經由一個或更多個氣體入口 23和一個或更夕 個氣體出口 25°倘若密封結構21存在，氣流是能夠被建^ 13 201142982 於具有液體層的基板支撐結構表面16與密封結構21之 間，因此，組成在圖2B中以虛線箭頭所示之溝槽氣流。 一個或更多個氣體入口 23和一個或更多個氣體出口 25 是以對稱之方式而沿著緣溝19來提供。在圖28之實施例 中，其中出現一個氣體入口 23和二個氣體出口 25。氣體入 口 23和氣體出口 25可以被安置成使得第一虛線27係藉由 連接二個氣體入口 23而成形，以及藉由連接二個氣體出口 25來組成第二虛線29,以上二虛線大致上是彼此相互保持 垂直。 在以上圖示之一些實施例中，緣溝19、密封結構21， 或是相關元件並未被表示出來。然而，應瞭解的是以上這 些實施例亦是可以包括以上肖色，2緣溝和/或密封結構亦 疋可以從具有以上特色之實施例中加以刪除。 圖3為概略說明來自液體夾持層丨之蒸發加工程序的 剖面視圖。位於液體層介面處之蒸發作用（亦即是位於内 凹液體表面處之蒸發作用）對於夾持器之穩定性是具有負 面衝擊。由於蒸發作用的產生，外部液體表面8之位置可 以往内朝向全新位置移轉，用以組成外部液體表面以 上位置移轉的結果造成藉由液體夾持層丨所覆蓋之表面區 域縮小，因此，被用來將表面2和表面3夾持在一起之表 面區域亦被縮小。結果導致夾持器之穩定性和強度減弱。 倘若被夾持層1所覆蓋之表面區域變得太小，夾持器的功 月&將會被破壞，且表面2和表面3則將無法再被保持在一 起。 201142982 檢視夹持器功能失效的原因，本專利發明人指出一項 能夠造成夾持器功能被破壞的主要機制係在此被稱為基板 1離之機制。圖5概略說明基板剝離之觀念。毋須受到理 論之限制，應瞭解的是由於沿著液體夾持層n之外部表面 、二發速率產生變化，基板丨2之邊緣可以開始從基板支撐 :構13往上抬高，位於具有由於液體夾持層退後所產生之 較大蒸發作用的位置點。抬高動作在圖5中是以箭頭Μ來 概略表7F。&於以上之剝離動作，蒸氣則更加容易從液體 夹持層11往外浪漏（如箭頭72之所示）。此外，液體失 持層11之外部液體表面18的表面區域增加同時，造成 蒸發速率增加。另外’局部剝離動作導致夾持層η進一步 2剝離動作發生之區域往後退，造成進—步的剝離動作和 广夾持之結果。以此方式，局部剝離動作將嚴重地限制 住夾持器的使用壽命。 需要延長夾持器的平均使用壽命，特別是用於與微影 σ工相關之應用，使得在被夹持基板有時接受的冗長加工 之過程中’夾持器功能得以被維持住和基板被保持於夾持 立置處4持器的使用壽命可以經由使料同解決方案來 =長。以上解決方案包括例如是沿著夹持液體周圍之 :用以大致上將面朝向夹持液體表面之周圍開口 ㈣、k供用於基板之懸臂梁配置方式1以得到介於其 板與基板支撐結構之密封έ士槿 土 & ^ 面巾間之周® Μ ϋ 上關閉動作、調整基板支撐6士 用於丰一思— &叉保、'。構之表面’用以包括具有 、、’田吕層疋位之不同毛細管位能的區域，以及包括用 15 201142982 於進入至沿著失持液體周圍區域内之犧牲蒸發作用的液體 儲存槽。此外，基板支撐結構之表面可以被區分為隔間， 用以避免在夾持液體層内生成氣泡，以及緣溝可以被使用 於具有段差部位之表面周圍，用以吸收凝結液滴來防止夾 持液體層受到干擾。將在此被詳加描述之以上解決方案是 可以單獨或是以彼此之間的任何組合方式來使用。 針對即將在真空環境内使用之夾持器的另外一項議題 係避免夾持液體過度洩漏至真空中。對於例如是在真空室 内所施行之帶電粒子微影加工的應用而言，以上議題是重 要考置，其中在真空室内的過多水份會損害微影加工程 序。密封結構和/或懸臂梁配置方式的使用（每一項單獨使 用或是結合其他解決方案來使用）能夠有助於減少來自夾 持液體層之蒸氣$漏量’以及延長夾持器之使用壽命。 密封結構 如同先前所提及之内容，密封結構可以被包括用以大 致^將=朝向夾持液體表面之周圍開口關閉，密封結構例 如是沿著以上所描述之爽持液體周圍的蒸氣限制用環形結 ，或邊緣2卜圖4A表示出基板支撲結構13具有型式為加 同邊緣之密封結構2丨。密封結構之頂部邊緣22以是具有與 基板支撐元件17之高度相等的高度為較適宜，使得密封結 冓此夠碰觸到接近其周圍處之基板，或是在介於密封結構 與基板之間組成狹窄間隙:。此種配置方式可以被用來大致 上將面朝向夾持液體表面之周圍開口關閉，用以減少蒸氣 的洩漏量。沿著夾持液體周圍所成形之封閉空$ (在此項 16 201142982 應用貫例中係藉由邊緣2丨、緣溝丨9、夾持液體i 1，以及基 板丨2之底部表面）亦是有助於延長夾持器的使用壽命，藉 由谷許失持液體和其蒸氣到達部份壓力，因此，能夠減小 來自夾持液體之蒸發速率。 密封結構21可以包含堅硬的頂部邊緣22，或是一個或 更多個具彈性可變形元件，例如是由氟化橡膠或橡膠所製 成之〇型裱或c型環，具彈性可變形元件被使用於頂部表 面處，用以形成蒸氣密封件來抵住基板。在圖4B之實施例 斤示之Ο型環24被配置於在封結構内的凹部中使得〇 型環的頂部被設定到達基板支樓元件之高度。Q型環於徑向 側邊（例如是面朝向基板支撐結構13之中央的徑向側邊） 處可以具有切口，使得在毋須施加過度壓力之狀況下，〇型 環可以被壓縮於基板支撐結構13與基板12之間，但是足 以限制住蒸氣的茂漏量。另外或是或纟，堅硬隆起部位或 刀刀邊緣（例如是在圖7B中所示之隆起部位26)可以被成 形於密封結構21之頂部表面内，用以往上延伸而形成外部 密封環。 、、f乍选封邊緣（亦即是密封結構之較窄頂部表面） 減少粒子或污染物可能被捕捉於密封邊緣之頂部表面上 破積存於基板與邊緣之間的機會，以及形成用於容許蒸 ::中洩漏出去之間隙、然而，較寬密封邊緣形成用於 5〒蒸氣洩漏出去$ & i 4, ®云之較長洩漏路徑，提供更大之阻力予蒸 :::¾:狀况。因此，介於較窄密封邊緣與較寬密封邊緣 間-有交換作用（例如是以上述之圖7A和圖7B來做 17 201142982 較）。當基板正確地接觸到較寬密封邊緣時，較 緣形成較長的茂漏量限流路徑，增加蒸氣茂漏經過密封件 :流動阻力和減小茂漏速率。然而，較寬密封邊緣亦增加 容易接受小型粒子的„，倘若小型粒子積存於基心密 封邊緣之間’ I交宽密封邊緣將會導致基板之局部偏向和得 到易產生洩漏之密封件…b，最佳的密封邊緣寬度係依 據環境之潔淨度和粒子干擾密封件之可能性而定。 密封結構之頂部表面或是外部密封環之頂部邊緣可以 被製成非常平㊣，用以避免非必要的間隙成形於密封環與 基板之底部表面中間。 … 在封結構2 1之頂部表面22、頂部表面具彈性可變形元 件24’或是隆起部位26之頂部邊緣以是被安置在基板支撐 元件之頂部高度或是被安置成低於基板支撐元件之頂部： 度為較適宜。位於基板支樓元件頂部之上方的頂部表面： 邊緣將容易導引出基板剝離動作，進而減少毛細管 之使用壽命。 、° 如同以 封件，以避 導致的抬高 致的間隙並 種在基板内 法預測。此 是經常存在 形抵住基板 蒸氣壓力 或變形戶ή 外，由於 性能則是 示洩漏量 量經過初 C型環纪 上所拖述之雄、封結構係用以得到狹 免基板被發現具有若干問題。藉由 動作，以及藉由基板之彎曲、撓曲 未被補你用於在此配置方式中。另 之扭曲現象的不可預期特性，密封 外，在此種設計中，蒸氣的若干標 。堅硬的密封結構將容許標示洩漏 之狹窄間隙，以及例如是0型環或 18 201142982 變形密封結構具有亦容許得到標示汽漏量之若干粗糙度 (大約100奈米或是更大）。 圖6概略說明蒸氣由於基板邊緣之抬高或彎曲現象而 產生泡漏。從液體爽持層蒸發出來之蒸氣被釋放於沿著夹 持液體周圍的空間内，其中包括緣溝19，以上空間是以帶 點區域來標示。倘若在此空間内的壓力超過特定臨界值 時，基板將會被略微抬高（以指向上方 同時，基板的其餘部份是被往下拉住（以指向員頭 來標不）。介於基板與密封結構之間的間隙增加，且蒸氣” 發散”至外界環境中’以箭頭74來概略標示。由於在基板内 之f曲現象或是在基板形狀内之其他扭曲結果，基板邊緣 的抬面動作和間隙的變寬結果亦是得以產生。當所使用之 基板非常薄時，以上狀況則是特別的問題。 包圍著以上配置方式之真空環境可以是特別的問題。 在壓域小之環境下施行微影加卫應用中，必須將發散至 真空環境内之蒸氣量維持於最小值。 懸臂梁配置方式 懸臂梁配置方式可以被用來提出以上所提及之問題。 懸臂梁配置方式的得到係藉由將在基板邊緣處之突出結構201142982 VI. Description of the Invention: [Technical Field] The present invention relates to a substrate supporting structure for holding a substrate on a surface thereof. [Prior Art] The clamping action of fixing a substrate (for example, a wafer) on the surface of a substrate supporting structure (for example, a wafer table) is conventionally known in the semiconductor industry, particularly in the micro-view. In a lithography system, a 'clamped substrate is formed by exposure to a projected photon or charged particles (for example, ions or electrons). The clamping function allows a high-precision round of the (four) portion of the substrate surface. Forming result - The method of clamping is to absorb the air between the substrate and the substrate supporting structure, that is, by creating a vacuum between the substrate and the substrate cutting structure. When the substrate is processed in a vacuum environment, it will not be effective (4). There are different solutions for holding the substrate in a vacuum environment, for example by electromechanical clamping. However, since it is used Clamping to the charged particle beam on the occasion: to the unnecessary influence 'The above solution is not suitable for use in charging: sub-microscopic effect. 7 Another method of clamping actionΒ &丄^ 'The method used to avoid the above problem by using a liquid layer, the liquid layer is configured to use ^ ^ ^ ^ 5 to pull out the capillary force, so that the substrate is π on the surface of the base structure The adhesion of the body to the surface of the substrate, f, hydraulic force r, the substrate support junction 201142982 will form a peripherally extending liquid surface extending in a concave manner between the above two surfaces. The formed concave liquid surface is easy to maintain Its shape, even if a force is applied to remove the substrate from the surface of the substrate support structure. The liquid layer further provides the purpose of enhancing the thermal contact between the substrate and the surface of the substrate support structure, making the substrate acceptable Higher heat load 'does not suffer from excessive shrinkage or expansion. However, clamping with liquid interlayers encounters some disadvantages. Evaporation of the clamping liquid layer will cause the clamping force to deteriorate over time. Therefore, limiting the service life of the clamping action to the vapor leaking from the liquid layer is also a question for many applications. The problem is, for example, a lithography process in which the substrate being clamped is introduced into a vacuum environment, and the water molecules leaking from the vapor into the vacuum chamber are contaminants that are harmful to the lithography process. The condensation of steam will also cause problems, resulting in a reduced service life of the clamping action. SUMMARY OF THE INVENTION One item of the present invention is to provide a mechanism for holding a substrate to present a problem encountered in prior methods. The problem heretofore is that the present invention provides a substrate support structure for holding a substrate on a surface by the action of a liquid capillary layer. The surface has an outer edge 'and includes one or more substrates for the substrate to be clamped a receiving substrate support member, wherein the one or more substrate branch members are configured to provide support to the substrate at a plurality of support locations. The substrate support structure further includes an outer surface tangentially and having a top edge that forms a dense 201142982 edge Surface or edge sealing structure. The distance between the outer edge of the surface and the outermost support location is greater than the distance between the outer edge and the edge of the seal. The substrate support structure may be designed such that the distance between the edge of the dense # and the outermost support position is greater than the maximum distance between adjacent support positions: In some embodiments, the distance between the outer edge of the surface and the outermost side leg position is greater than or equal to twice the distance between the outer edge and the sealing edge. In some embodiments, the distance between the sealing edge and the outermost support location is greater than or equal to twice the maximum distance between adjacent support locations. In some embodiments, the distance between the outer edge of the surface and the outermost support location is greater than or equal to twice the maximum distance between adjacent dock locations. The sealing edge can be configured to be substantially the same height as the top of the substrate support member. One or more substrate support members are applied to the substrate in a plurality of sub-buildings that are positioned to have a regular pattern of === and a distance between the sealing edge and the support position closest to the sealing edge It can be configured such that it can itself exceed the above pitch. The receiving surface of the substrate support structure further includes a portion having a different capillary potential energy for guiding a predetermined capillary flow in the liquid loss holding layer during clamping. At least a portion of the portion having different capillary potential energy is provided around the receiving surface of the substrate support structure. In some embodiments, the predetermined capillary flow in the liquid grip layer is in a direction toward the periphery of the liquid grip layer, and in some embodiments, a predetermined capillary flow in the layer of liquid inflammation 6 201142982 At least some of this occurs in one or more trenches within the surface of the substrate support structure. The locations with different capillary potentials can have different heights and/or different affinities for holding liquids and/or different surface treatments or surface materials or surface coatings to provide different capillary f-bit energies. The surface of the substrate support structure may include light having a lower capillary potential energy, and the portion is located at the periphery of the substrate support surface at - or more predetermined positions, 'Tongri Temple, most of which There is a higher capillary potential energy around the surface of the substrate support structure. At least a portion of the surface portion having a lower capillary potential energy may be in the form of one or more grooves, and the one or more grooves may comprise - or more - curved portions. In some embodiments, at least a portion of the one or more grooves may be in the form of a helix, and in some embodiments, at least a portion of the one or more grooves have a stiff style. The surface area of one or more of the grooves may be configured to cover less than 25% of the substrate structure. In some embodiments, the surface areas of the one or more trenches are evenly distributed over the surface of the substrate support structure. The rim groove may be provided around the receiving surface, and the rim groove includes a higher step portion located around the = face. Between the top of the substrate support member, the height difference between the slave portions of the edge groove is greater than or equal to twice the height of the substrate support member. The snagging surface may also have raised features for forming a plurality of compartments and the height of the raised structures is less than the height of the substrate support members. In a practical example, 'the height difference between the raised structure and the substrate supporting member 201142982 is at least 】 5 micrometer β substrate supporting structure may also include a liquid storage tank for storing the storage tank liquid, and has A vapor transport system coupled to the storage tank of the substrate support structure receiving surface is used to provide vapor from the reservoir liquid to the capillary layer. The storage tank extends below the receiving surface, and the storage tank may include a hole having a larger portion and a smaller portion, wherein a larger portion is disposed below the receiving surface, and a smaller portion is outwardly from the periphery of the receiving surface. extend. The volume used to store the reservoir liquid into the reservoir is greater than the volume of the liquid capillary layer. In some embodiments, the reservoir is detachable from the receiving surface. The substrate support structure can also include a liquid removal system for removing liquid at the periphery of the receiving surface. The liquid removal system includes a gas distribution system. The gas distribution system then includes at least one gas inlet for providing a gas and at least one gas outlet for removing the gas. The gas distribution system is a gas inlet and a gas outlet having a plurality of equidistant positions relative to each other. In another aspect, the present invention relates to a substrate support structure and a combination of substrates sandwiched on a surface of a substrate support structure, wherein the substrate is clamped to the surface of the substrate support structure by the action of a liquid capillary layer, The surface includes one or more substrate support members for receiving the substrate and the substrate configured to provide support to the substrate at one or more support locations. The substrate support structure further includes a sealing structure along the perimeter of the surface, and a top surface or edge that forms the sealing edge. The distance between the sealing edge and the outermost supporting position is sufficiently large that the substrate is bent down and bent in the substrate during the process of the substrate to reduce or eliminate the bottom surface of the sealing edge and the substrate. The gap in the middle. During the clamping of the substrate, the gap can be reduced such that the bottom surface of the substrate can touch the sealing edge. In some embodiments, the sealing edge is substantially the same height as the top of the substrate support member. The above combination may be configured such that the distance between the sealing edge and the outermost support position is greater than or equal to twice the maximum distance between adjacent support positions. In some embodiments, the distance between the capillary liquid layer and the outermost support location is greater than the distance between the capillary liquid layer and the sealing edge. The receiving surface 'further includes a portion having a different capillary potential energy for guiding a predetermined capillary in the liquid loss holding layer during the loss of the holding force; L, in some embodiments, in the liquid holding The predetermined capillary flow within the layer is in a direction toward the periphery of the liquid clamping layer, and in some embodiments, at least a portion of the predetermined capillary flow within the liquid loss holding layer occurs in the substrate support structure In one or more grooves in the surface. The presently disclosed principles of the present invention are obviously in various ways. [Embodiment] The present invention is a description of different embodiments of the present invention, and is provided as an application example only with reference to the following drawings. 1 is a cross-sectional view schematically showing a liquid layer 201142982 1 between a first substrate 2 (for example, a wafer) and a second substrate 3 (for example, a substrate supporting structure similar to a wafer table). It is suitable for liquid helium used in applications related to lithography a. The first substrate 2 and the first substrate and the second substrate are arranged in a liquid layer by the action of the liquid Λα s 1 and further referred to as a liquid layer. For the clamping layer, the bamboo layer in the manner shown in Figure 1 will be referred to as the following, "disarmed device". The thickness of the pattern is usually very small, and in this case The capillary force has its importance, #, "The holding layer can also be referred to as the capillary S substrate 2 and the second substrate 3 respectively have a substantially flat surface 6; on the second substrate 2 and the second substrate 3 The indicated distance between the opposing surfaces 5, 6^ is indicated by the height h. The clamping layer i has an outer liquid surface 8 also referred to as a concave surface, due to the liquid to the first substrate 2 and the second substrate 3 Adhesive connection function 'The surface of the external liquid above is usually a concave shape. In the application example of using water as a liquid holding liquid, the van der Waals force generated by the dipole arrangement of water molecules will cause the molecules to each other. Interconnected (surface tension)' and attached to other surfaces (adhesion) The concavity of the outer liquid surface 8 (also referred to as the concave surface curvature) is based on the contact angle between the outer liquid surface 8 and the surface 5 of the first substrate 2, and according to the external liquid surface 8 and the second The contact angle 中间 in the middle of the surface 6 of the substrate 3. The above different contact angles are based on the liquid used in the sandwich layer 1 and the enamel according to the materials of the above two substrates 2, 3. Further, the concave surface curvature Providing a pressure differential across the outer liquid surface 8. A higher concave surface curvature (i.e., a more concave outer surface) can provide a greater pressure differential. The two are used to have substantially flat relative orientations. A more detailed description of the clamping layer that holds the structure of the surface is provided in the International Patent Application No. WO 2009/01 1574, the entire disclosure of which is hereby incorporated by reference in its entirety. A cross-sectional view and a top view of a substrate support structure 13 suitable for holding the substrate 12, wherein the substrate support structure 13 is formed by the action of the clamping layer n in the manner described with reference to FIG. The substrate support structure 13 includes a surface 16 having one or more substrate support members 17. The substrate support member 17 is configured to define and maintain a distance between the substrate 12 and the substrate support structure 13. These substrate support members 17 may be in the form of nodule portions as shown in Figures 2A, 2B, or - or more raised portions. Alternatively or alternatively, a plurality of spacers (e.g., = glass particles, dioxide 7 Particles or similar particles may be uniformly dispersed above the surface 16 for use as a substrate support member. The substrate support member 17 is configured to reduce the holding force exerted by the clamping layer 丨丨Deformation of the substrate. The presence of the substrate supporting member 例如 can, for example, reduce the occurrence of substrate bending. In addition, the presence of the substrate supporting member 17 can reduce the influence of contamination caused by particles on the back surface 15 of the substrate 12. The pitch of the substrate support member Γ/ is based on the requirement for the maximum substrate offset vector caused by the clamping force of the clamping layer. The contact surface of each of the substrates 2 is such that the contact surface is subjected to extensive deformation and/or damage. The edges of the contact elements are rounded to reduce particle contamination during the clean process, for example. The general diameter value of the nodule portion having a circular contact area is 11 201142982 in the range of 10 micrometers to 500 micrometers, for example, micrometers. The average pitch value of several nodules is in the range of i mm to 5 mm, for example 3 mm. The nominal height of the substrate support tl member 17 determines the distance between the substrate 丨 2 and the surface 16 of the substrate support structure 13. The nominal height is further influenced by the available pressure on the inflammation. Substrate support (4) The nominal height of 17 is usually the result of an exchange between the required clamping pressure and the possible risk of distortion caused by the particles. Lower heights usually increase the available moxibustion pressure. Larger clamping pressures generally improve the stability of the gripper. In addition, a lower nominal height will reduce the thickness of the clamping layer and subsequently improve the heat transfer between the substrate Μ and the substrate 11 structure 13. In addition, although there are not many vagus particles in the vacuum system, these vagus particles appearing on the substrate support structure will lead to severe local instability, especially if the stalk particles are: 2: The nominal height of the substrate support member. Therefore, the higher altitude will reduce the chance of facing the above negative impact. The material properties of the other parameters 12 that can be varied to achieve the desired clamping pressure, the material properties of the surface 16 of the substrate slab, the surface area of the surface 16, the shape and number of substrate support members 17, The pitch of the components of a board and the liquid type of the sandwich layer 11 of the board are also used as a specific solution, the substrate 12 and the substrate supporting structure. One or two contact surfaces may be surface treated, and JLJ. 4-iL to 4疋 is coated with a layer of material that is in the middle of the contact angle between the liquid layer and the _ contact surface 12 201142982. The surface μ of the anti-branch structure 13 is similar to the edge groove or groove 19 or similar. In the machining program, the edge groove 19 is used to construct the holder. In order to achieve this, the 'edge groove 1' can be connected to a liquid conditioning system and/or a gas conditioning system. In the machining program for constructing the gripper, one or more machining operations are performed via the rim 19, which includes supplying the gripping liquid, beta removing excess liquid, and dispensing dry gas. The gas distribution action is preferably to distribute the dry gas around the outer surface of the substrate support structure to further remove excess gripping liquid to construct the grip. Dry gases suitable for use in gas distribution operations include nitrogen and inert gases such as argon, although other gases may be employed. The liquid conditioning system is configured to supply liquid to the surface of the substrate support structure and/or to remove the liquid under the substrate to form a clamping layer after the substrate is disposed on top of the liquid layer The use of an external liquid supply and a liquid removal system using a rim groove to form a nip layer is described in detail in the U.S. Patent Application Serial No. 12/7, the entire disclosure of which is hereby incorporated by reference. In the shape of the rim 19, the rim 19 is confined by the sealing structure η to limit the amount of leakage of the base gas 2 from the nip η and the rim 19 into the surrounding environment. The top side of the sealing structure 21 is preferably of a height equal to the nominal height of the substrate-seeking member 17. As previously mentioned, the 'edge groove 19 is in contact with the gas distribution system, for example via one or more gas inlets 23 and one or more gas outlets 25°. If the sealing structure 21 is present, the gas flow is capable of It is constructed between 13 201142982 between the substrate support structure surface 16 having the liquid layer and the sealing structure 21, thus constituting the groove flow shown by the dashed arrow in Fig. 2B. One or more gas inlets 23 and one or more gas outlets 25 are provided along the rim 19 in a symmetrical manner. In the embodiment of Fig. 28, a gas inlet 23 and two gas outlets 25 are present. The gas inlet 23 and the gas outlet 25 may be disposed such that the first broken line 27 is formed by connecting the two gas inlets 23, and the second dotted line 29 is formed by connecting the two gas outlets 25. The upper two dashed lines are substantially Keep each other perpendicular to each other. In some of the embodiments illustrated above, the rim 19, the sealing structure 21, or related components are not shown. However, it should be understood that these embodiments may also include the above-described color, and the two edge grooves and/or sealing structures may also be removed from the embodiments having the above features. Fig. 3 is a cross-sectional view schematically showing an evaporating process from a liquid holding layer. The evaporation at the interface of the liquid layer (i.e., the evaporation at the surface of the concave liquid) has a negative impact on the stability of the holder. Due to the evaporation, the position of the external liquid surface 8 can be moved inward toward the new position, and the surface area above the surface of the external liquid is displaced to cause the surface area covered by the liquid clamping layer to be reduced. The surface area that is used to hold the surface 2 and the surface 3 together is also reduced. As a result, the stability and strength of the holder are weakened. If the surface area covered by the grip layer 1 becomes too small, the power of the gripper & will be destroyed, and the surface 2 and the surface 3 will no longer be held together. 201142982 In view of the failure of the function of the gripper, the inventor of the present invention pointed out that a main mechanism capable of causing the function of the gripper to be broken is referred to herein as a mechanism for the separation of the substrate. Fig. 5 schematically illustrates the concept of substrate peeling. Without being bound by theory, it should be understood that due to the change in the rate of the second surface along the outer surface of the liquid clamping layer n, the edge of the substrate 丨2 can begin to be supported from the substrate: the structure 13 is raised upwards, and is located at the The point at which the clamping layer retreats to produce a larger evaporation effect. The raising operation is shown in Fig. 5 by an arrow to summarize the table 7F. & In the above peeling action, the vapor is more easily leaked from the liquid holding layer 11 (as indicated by the arrow 72). Further, the surface area of the outer liquid surface 18 of the liquid-releasing layer 11 is increased while causing an increase in the evaporation rate. Further, the partial peeling operation causes the region where the pinching layer η further 2 peeling action occurs to retreat, resulting in a peeling action of the step and a result of wide gripping. In this way, the partial peeling action will severely limit the useful life of the holder. There is a need to extend the average life of the gripper, particularly for applications related to lithography, so that the gripper function is maintained and the substrate is held during the lengthy processing that is sometimes accepted by the substrate being clamped. The service life of the holder held at the clamping stand can be lengthened by the same solution. The above solution includes, for example, along the periphery of the clamping liquid: a cantilever beam arrangement 1 for substantially surrounding the surface toward the clamping liquid surface (4), k for the substrate to obtain a plate and substrate support structure therebetween Sealed gentleman's earth & ^ Week of face towel® Μ 上 Close action, adjust substrate support 6 for Feng Yisi - & Fork, '. The surface of the structure is used to include regions having different capillary potentials of the , , and the fields of the field, and a liquid storage tank that includes the use of 15 201142982 to enter the sacrificial evaporation in the area surrounding the lost liquid. In addition, the surface of the substrate support structure can be divided into compartments to avoid bubble formation in the liquid layer being sandwiched, and the edge groove can be used around the surface having the stepped portion to absorb the condensation droplets to prevent the clamping. The liquid layer is disturbed. The above solutions, which will be described in detail herein, can be used individually or in any combination with each other. Another issue for grippers that are to be used in a vacuum environment is to avoid excessive leakage of the gripping liquid into the vacuum. For applications such as charged particle lithography performed in a vacuum chamber, the above issues are important considerations in which excessive moisture in the vacuum chamber can damage the lithography plus engineering. The use of sealing structures and/or cantilever configurations (each used alone or in combination with other solutions) can help reduce vapor leakage from the liquid layer and increase the life of the holder . Sealing Structure As previously mentioned, the sealing structure can be included to substantially close the opening around the surface of the gripping liquid, such as a vapor restricting ring around the liquid holding liquid described above. The junction, or the edge 2, shows that the substrate baffle structure 13 has a sealing structure 2 flanked by the same edge. The top edge 22 of the sealing structure is preferably of a height equal to the height of the substrate support member 17 such that the sealing jaw is sufficiently accessible to the substrate near its periphery or between the sealing structure and the substrate. Form a narrow gap: This arrangement can be used to substantially close the face toward the surrounding opening of the gripping liquid surface to reduce the amount of vapor leakage. The enclosed void $ formed along the circumference of the gripping liquid (in the application of this example, the edge 2 丨, the edge groove 、 9, the liquid i 1, and the bottom surface of the substrate 丨 2) is also This helps to extend the life of the gripper, and by the loss of the liquid and its vapor to the partial pressure, it is possible to reduce the evaporation rate from the gripping liquid. The sealing structure 21 may comprise a rigid top edge 22 or one or more elastically deformable elements, such as a 裱-type or c-type ring made of fluorinated rubber or rubber, with elastically deformable elements being Used at the top surface to form a vapor seal against the substrate. The Ο-shaped ring 24 shown in the embodiment of Fig. 4B is disposed in a recess in the closure structure such that the top of the 〇-shaped ring is set to the height of the substrate slab element. The Q-shaped ring may have a slit at a radial side (for example, a radial side facing the center of the substrate support structure 13) so that the 〇-shaped ring can be compressed to the substrate support structure without excessive pressure being applied. Between 13 and substrate 12, but sufficient to limit the amount of leakage of vapor. Alternatively or alternatively, a hard raised portion or knife edge (e.g., raised portion 26 as shown in Figure 7B) may be formed into the top surface of the sealing structure 21 to form an outer sealing ring by conventional extension. The edge of the seal (ie, the narrower top surface of the seal structure) reduces the chance that particles or contaminants may be trapped on the top surface of the seal edge between the substrate and the edge, and is formed to allow Steaming:: The gap that leaks out, however, the wider sealing edge forms a longer leak path for the 5 〒 vapor leak out of the $ & i 4, ® cloud, providing greater resistance to steaming:::3⁄4: condition. Therefore, there is an exchange between the narrower sealing edge and the wider sealing edge (for example, compared to Figure 11A and Figure 7B above). When the substrate is properly in contact with the wider sealing edge, the trailing edge forms a longer leakage path to increase the vapor leakage through the seal: flow resistance and reduced leach rate. However, the wider sealing edge also increases the ease with which small particles can be accepted, provided that small particles accumulate between the edges of the core seal. I widening the sealing edge will result in partial deflection of the substrate and a seal that is prone to leakage...b, The optimum sealing edge width depends on the cleanliness of the environment and the possibility of particle interference with the seal. The top surface of the sealing structure or the top edge of the outer sealing ring can be made very flat to avoid unnecessary The gap is formed between the seal ring and the bottom surface of the substrate. ... at the top surface 22 of the seal structure 21, the top surface has an elastically deformable element 24' or the top edge of the raised portion 26 is placed on top of the substrate support member The height is either lower than the top of the substrate support member: a degree is preferred. The top surface is located above the top of the substrate support member: the edge will easily guide the substrate to peel off, thereby reducing the life of the capillary. As with the seal, the gap caused by the lifting is avoided and the method is predicted in the substrate. This is often the form In addition to the substrate vapor pressure or the deformation of the household, the performance is the amount of leakage indicated by the male C-circle, and the sealing structure used to obtain the narrow substrate is found to have several problems. And by bending and flexing the substrate, it is not used in this configuration. In addition to the unpredictable nature of the distortion phenomenon, in addition to the seal, in this design, several dimensions of the vapor. The rigid sealing structure will allow The narrow gap indicating the leak, and for example the 0-ring or 18 201142982 deformed seal structure, has some roughness (approximately 100 nm or more) that also allows for the indicated steam leak. Figure 6 is a schematic illustration of the vapor due to the edge of the substrate. The bubble is raised or bent to cause bubble leakage. The vapor evaporated from the liquid cooling layer is released into the space around the clamping liquid, including the edge groove 19, and the above space is indicated by the dotted area. When the pressure in this space exceeds a certain threshold, the substrate will be slightly raised (to point upward while the rest of the substrate is pulled down (to point The head is marked with no.) The gap between the substrate and the sealing structure increases, and the vapor "diverges into the external environment" is generally indicated by the arrow 74. Due to the f-bend phenomenon in the substrate or within the shape of the substrate As a result of other distortions, the lifting action of the edge of the substrate and the widening of the gap are also produced. The above situation is a particular problem when the substrate used is very thin. The vacuum environment surrounding the above arrangement can be special. Problem: In the application of lithography in a small pressure environment, the amount of vapor that is diverged into the vacuum environment must be kept to a minimum. Cantilever beam configuration The cantilever beam configuration can be used to propose the above mentioned Problem. The cantilever beam configuration is obtained by protruding structures at the edge of the substrate.

增加 由將基板支撐元件安置於從基板支撐結構表面W 之周圍异起的若干最短gp连 /0 ^ 距離處，使付基板於其邊緣處能夠 <下移動’用以大致上將面朝向夾持液體表面之周圍開 及進—步限制從液體夾持層蒸發出來之蒸氣被 釋放朝向I繞環境中。密封結構可以於基板周圍或是於基 19 201142982 板周圍附近被使用，用以改善抵住基板之密封件。此種解 決方案可以被使用於基板支撐結構之任何實施例。 圖7Α概略說明以下狀態，其中圖6之表面的外部基板 支撐元件被移動，使得介於基板邊緣與最外側基板支撐結 構17之間的距離增加。結果導致從最後一個基板支撐元件 延伸出來之基板部位增加，用以組成懸臂梁部位。因為藉 由毛細管夾持層所施加之夾持作用力（以指向下方之箭頭 來標示），基板之懸臂梁部位被往下拉動朝向密封結構Μ， 與由於在夾持液體周圍之空間内的蒸氣壓力和基板脊曲現 象所產生的往上作用力做相反方向運動4基板内之下垂 現象將介於基板與密封結構之間的間隙減小，且以是導致 基板大致上將間隙關閉為較適宜。基板的周圍部位以是因 受力而抵住密封結構為較適宜，甚至當在基板内略有彎曲 時’亦可痛保基板周圍部位與密封結構相接觸和介於基板 與密封結構之間的間隙被關閉。因此，懸臂梁式密封件能 夠與用於將基板從密封邊緣推動離開之蒸氣壓力的作用力 做相反方向運動，以及能夠克服在基板内的一些彎曲量（正 向或反向），用以大幅增加密封件功能的可預測性。 為了要在基板之周圍部位上產生足夠的往下作用力， 用以組成有效的密封件，基板之懸臂梁部位必須要足夠大 和作動於懸臂梁部位之夾持液體層的區域亦必須要足夠 大。以上結果的得到則是藉由於從最外側基板支撐結構17 到達立夾持液體層之周圍部位處（亦即是成形於爽持液體層 之外邛表面上的凹液面位置處）配置有足夠長的距離。此 20 201142982 距離在圖7B中是以距離，，a”來說明。在懸臂梁部位下方之 較大夹持區域將施加相對應的較大往下作用力將基板往 下拉動，用以組成抵住密封結構21之密封邊緣或隆起部位 26的良好密封件。 存在於夾持液體層之凹液面與密封結構中間之空間内 的蒸氣壓力將會施加往上作用力於基板接近其周圍部位 上為了要組成良好密封件，藉由位於基板懸臂梁部位上 之炎持層戶斤施加的往下作肖力必須大到能夠抵消掉由蒸氣 壓力所施加之往上作用力，以及作動基板來與密封邊緣相 接觸。為了要確保得到以上結果，相較於曝露至往上蒸氣 壓力之基板區域’在懸臂梁部位下方之夾持區域則必須要 足夠大。在一項實施例中’距離a是明顯地大於從夾持液體 層之凹液面到達畨封邊緣處的距離，此距離在圖7B中被表 示為距離”b”。舉例而士，她 θ + J而5距離a可以是比距離b大二倍或 疋一倍以上。以上結果確保在基板懸臂梁部位上的作用力 平衡狀況能夠往下偏斜、朝向密封邊緣。 由於夹持液體層之凹液面位置是可以改變基板支標 結構的幾何形狀是可以s丄λ 另卜精由參考夾持表面16之周圍部 位來加以界定，央拉矣；1 r '面16亦即是夾持液體層成形於其上 之表面的外部邊緣28 Γ力固m丄 . (在圖7B中被標示）。外部邊緣28 可以被界定’例如是藉由缝潜 稽由、.彖溝丨9之内側壁面的徑向 （ 同在圖7B中所示之實· 9)或是第二部位52(::A、周圍邊緣41之外部邊緣(圖 側壁面（圖⑽、圖17β摊圖12) ’段差部位83之内 )溝L 43之内側壁面（圖18A)， 21 201142982 或疋用以”且成夾持表面之外側邊緣的任何其他結構。因 此，基板支樓結構以是具有從最外側基板支撐結構到達夹 持表面1 6之周圍部位（外部邊緣28 )處足夠長的距離為較 適宜’此距離在圖7B中是以距離”c”來說明。同樣地，距 離c以是明顯地大於從夾持表面16之周圍部位到達密封結 構21之密封邊緣或隆起部位％的距離為較適宜，此距離 在圖7B中是以距離，，d”來說明。在一項實施例中，距離c 可以疋比距離d大二倍或是二倍以上。以上結果確保在基 板懸臂梁部位上的作用力平衡狀況能夠往下偏斜、朝向密 封邊緣。 此外’真正的距離a和距離c以是足夠長為較適宜，使 仔基板之懸臂梁部位能夠略微往下偏斜，使得在基板内之 任何f曲或撓曲現象（亦即是接近基板之周圍處的往上偏 向狀況）能夠被抵消掉。基板支撐元件17以是被配置用以 提供支撐作用予其所在位置是足夠靠近在一起之基板為較 適宜’用㈣免於支樓位置之間出減板的明顯往下偏向 (下垂）；見象。基板支樓元件可以被配置成規則的樣式， 其中介於支撐位置中間之節距尺寸是能夠避免在支撐位置 :間之基板内出現明顯下垂現象。在一些實施例中，距離c 是大致上等於或大於介於支撐位置之間的標示距離，同 時距離d疋大致上等於或小於此標示距離。距離“口距離 c則以是大幅度地大於介於基板支撐元件之支撐位置中間 的標示距離或最長距離為較適宜。舉例而言，針對〇 775毫 米厚之矽基板，介於支撐位置之間可以採用3毫米或更短 22 201142982 的節距，且5毫米或更長的距離a亦是適宜。在一項實施例 中，距離a和/或轉c是等於或大於介於基板支樓位置中 間之最長距離的二倍。 施加於基板之懸臂梁部位上的壓力可以被視為從最外 側支撐位置所作動之扭矩，在懸臂梁部位之下方的夾持作 用力是作動於往下方向’而蒸氣壓力係作動於往上方向。 倘右夹持液體層往後退朝向位於夾持液體層周圍之任何位 置處的基板支I结構“（例如是由於夾持液體之蒸發作 用），由於夾持區域縮小和扭矩臂m主下的夹持作用 力將會減小。#而，往上的作用力將維持固定不變，或是 因為介於凹液面與填充有蒸氣之密封邊緣中間的區域變 4上的作用力將會增大。因此，介於往上作用力與往 下作用力之間的平衡狀態是可以移轉，使得*再有足夠的 下作用力來提供足夠密封作用’且在凹液面往後退之區 量將會增力"以下所描述之夾持器定位解 =案可以被用來防止或降低凹液面往後退狀況的發生， 件致得到更加長期耐久和更加緊密的懸臂梁式蒸氣密封 隨者介於基板底部表面與密封結構頂部 建構，蒸氣密封件的緊密度則是受限於以上二= 面面：;;輪度和粒子之存在，粒子係變成被保存於以上二： 構的基板與其抵住而相接觸之密封結 二、且，用以避免非必要的間隙出現 23 201142982 於基板與&封結構之間’且能夠大幅度降低蒸氣的茂漏速 率(相較於圖6中之箭頭74,以較小的箭頭75來概略表示)。 θ密封結構21是以如同以上所描述之方式來成形（例如 疋在圖4Α和圖4Β之討論内容中），舉例而言，藉由包括 堅硬表面22或具彈性可變形元件24之頂部表面，或是藉 由從在圖7Β中所示之密封結構2 i往上延伸的狹窄隆起部 位26用以組成密封邊緣。如同先前所記載之内容，介於 在圖7A中所不之較寬密封邊緣與在圖7B中所示之較窄密 ’于邊’彖中間係具有交換情形。當基板正確地與密封邊緣相 接觸時，車交寬密封邊緣將形成較長的流動通路，針對攻漏 、!過：封件之蒸氣提供較高的流動阻力但是較寬密封邊 緣亦疋更加谷易受到小型粒子的影響，造成基板產生局部 偏向，得到容易發生洩漏的密封#。因此，密封邊緣的最 佳寬度係依據被夾持基板於其内被使用之環境的潔淨 而定。 密封邊緣（亦即是密封結構之頂部表面、具彈性可變 形兀件’或是㈣隆起部位）以是被安置成大約是與基板 支標7L件之頂部保持相同高度，或是略微高於或低於此高 ^為，適1：。由於因為懸臂帛酉己置方式所導致產生之基板 f下又壓狀況，在頂部表面或邊緣之相關定位中則具有更 f空間，以及甚至當密封結構是略微高於基板支撐元件之 高度時，基板的剝離動作則是難以產生。此外，加入以上 锸述之周圍防止剝離邊緣將進一步降低發生基板剝離動 作的可能性，且較高的密封結構係有助於在基板與基板支 24 201142982 撐結構之間導引 件。 出較大的密 封作用力和提供較佳的密封 懸臂梁式密封件將夾持作 贪up 料用之持續時間改善和降低蒸 矾的洩漏罝，且毋須額外的夾 ,α ^ Η，n ^ ^ B 了卡侑步驟。懸臂梁式密封 件亦疋相备間易和施行成本低廉，且不同於—些其他的解 决方案，懸臂梁式密封件不致 於^加基板支撐結構的容積。 懸#梁式密封件是足以使得 〇〇 * 于隹此所4田^之用於延長夾 持器使用壽命和降低蒸m量所需的其他解決方案變成 不需要。倘若懸臂梁式密封件的作動狀況極佳，導致蒸氣 的洩漏現象不再發生，以及其中毋須使用到例如是毛細管 層疋位之額外解決方案。然@，倘若密封件並非是完美的 (如㈣封件經常是如此），以下所描述之基板剝離現象 依然疋會發生’進而將在某一位置處之密封件破壞，以及 料蒸氣從夾持液體層茂漏出去和快速蒸發。因此，較適 宜之方式係另外採用以下所描述之毛細管層定位和/或在此 所描述之其他解決方案，用以將基板剝離動作減到最少和 將夾持器穩定住。 毛細管層定位 如同先則所提及之内容’基板支撑結構之表面可以被 °周^用以包括具有不同毛細管位能的區域，用以影響夾持 液體之運動狀況來加強在重要區域内的夾持器。毛細管位 能被界定為藉由毛細管壓力來吸引液體之位能。具有較高 毛細管位能之表面部位係用以吸引夾持液體，同時，具有 較低毛細管位能之表面部位則對夾持液體的吸引力較小。 25 201142982 此特徵可以被用來形成以預設方向流動之夾持液體流，用 以確保在重要位置處之蒸發液體能被重新補充。 本項專利發明人特別發現具有包含不同毛細管位能部 位之表面的基板支撐結構導致夾持器能夠維持較長之平均 使用期限。不同的表面部位必須被配置成使得在夹持層内 能夠建構可預測毛細管流。藉由在夾持層内之液體的運 動，毛細管流可以被導引產生，其中在夾持層内之液體是 從具有較低毛細管位能之位置點流到具有較高毛細管位能 之位置點，特別是位於具有較高蒸發速率之外部表面的位 置點。依據特殊的狀況，藉由適宜地將不同表面部位配置 於基板支撐結構之表面上，毛細管流則是可以採用可預測 之方式來導引。 表面部位之毛細管位能是以若干方式而受到影響。在 整個描述内容中，本發明之實施例係 使用來加以描述。使用不同高度水平是穩健==之 用以得到具有不同毛細管位能之部位。具有較低高度水平 之表面部位於基板與表面部位之間將會容納有相當厚的夹 持液體。相較於具有較高之高度水平和相當薄之夾持液體 層的表面部位，具有較低高度水平之表面部位的毛細管位 能則是相當低。 用以得到表面部位所需之不同毛細管位能的其他方法 包括，但不限於是表面處理、用於每一個表面部位之不同 材料選擇，以及於表面部位上提供一層或更多層包覆層。 在使用水之應用實例中，舉例而言，I面部位可以被製成 26 201142982 大致上疋親水性，或是表® # /Λν -Γ ΛΙ 衣面°卩位可以被製成大致上是疏水 性’或是以上技術可以被社人 、，σ σ使用。接著，施加至表面上 的水份將會被吸引至相當且 *具親水性之表面部位。 圖8Α表示出基板剝離的觀念。在此項應用實例中，基 板之右手側邊被抬高，因而將位於此位置處之夾持層η的 卜Ρ表面加大&於基板12被抬高，更多蒸氣將會茂漏至 接近基板抬高區域處之圍繞真空系統中…要補償蒸氣 的流失，夾持液體的蒸發作用亦為之增力σ。此外，基板的 抬高動作導致接近基板12之抬高區域處料部表面22被 拉長。此拉長現象導引出⑵液面曲率減小，亦即是内凹外 部表面縮小。Μ先前所提及之㈣，縮小的内凹外部表 ，是與橫過表面之較小壓力差—致。由於沿著外部表面之 瘵氣壓力維持大約是相同，在夹持層i i内之壓力差則是會 上升。在圖8A中，於右側外部表面之夾持層内的壓力是大 於在左側外部表面之夾持層内的壓力。或是換言之，在左 側外。P表面.之毛細f位能是高於在右側外部表面之毛細管 位能’以及導致在夾持層内之毛細管流是從右側被導引朝 向左側，概略是以白色箭頭來標示。此毛細管流使得位於 左側之外部表面18能夠維持其原有位置。另外一方面，倘 若左側外部表面確實已往後退而組成外部表面18,，毛細管 流則是以雙向箭頭來概略標示。位於在圖8A中失持器之右 手側邊，毛細管流導致夾持層U之外部表面22依照箭頭 所概略標示之方向而往後退。由於基板12之下方的液體被 清除，被夾持層n所覆蓋之區域將會縮小。位於右手側邊 27 201142982 之夾持作用力的缺少將造成基板12之邊緣進一步被抬高， 進而導致夾持器的進一步劣化，以及最後致使夾持器失效。 圖8B概略表示出在本發明之若干實施例中所採用的觀 念。本項專利發明人已瞭解到在凹液面曲率中之相類似差 異係藉由將具有包含不同高度水平部位之表面的基板支撐 結構13組成而被導引得到。在圖8B中，元件5〇代表著具 有相較於其餘表面而是突出高度水平之基板支撐結構表面 的部份。 在平衡之狀態下，位於左手側邊之凹液面和位於右手 側邊之凹液面是具有大致上相同的曲率。因為蒸發之結 果，位於以上二側邊之外部表面丨8是略微往後退^從圖形 中可以看出，介於基板12與基板支撐結構丨3之間，位於 在藉由元件50所覆蓋區域内之位置處的液體夾持層丨丨之 尚度疋小於位於尚未被元件5 〇所覆蓋位置處之液體夾持層 11的高度。外部表面18在左手側邊處之後退動作將會導致 凹液面高度減小和其曲率增加，在右手側邊處，外部表面 之後退動作對於凹液面之尺寸和形狀則並未具有重要的影 響。結果導致毛細管流是以參考圖8A所討論之類似方式而 被導引產生（以白色箭頭為代表）。毛細管流容許位於左 手側邊處之夾持層周圍液體被重新補充，使得外部表面j 8 能夠回復到其原有位置，同時，位於右手側邊處之外部表 面疋從位置2 2朝向更加往内之位置後退。 圖9為用於將依照本發明實施施例之基板丨2支撐住的 基板支撐結構1 3之剖面視圖。圖9之基板支撐結構丨3包 28 201142982 止剝離或夹持器定位邊緣41。周圍邊緣4i於基板 ^構13與基板12 <間是具有較短距離。介於基板支 樓結構13與某;1 2 $ _、 3的標示距離在圖1中是以高度h :，向度h通常是大約3到1〇微米。介於周圍邊緣4i ，、基板U之間的距離-般是在5〇〇奈米到15微米之範圍 内士。周圍邊緣41所具有之高度則以是比被提供於基板支樓 、:構13之表面16上的接觸元件之標稱高度少"敬米為較 適宜。 毋須受到理論之限制，周圍邊緣41係參考圖10A到圖The addition is made by placing the substrate support member at a distance of a few shortest gp connections / 0 ^ from the periphery of the surface W of the substrate support structure, so that the substrate can be moved "at the edge" to substantially face the clip The vaporization of the liquid from the liquid-carrying layer is released to the surroundings of the liquid. The sealing structure can be used around the substrate or near the perimeter of the base 19 201142982 to improve the seal against the substrate. Such a solution can be used in any embodiment of a substrate support structure. Fig. 7A schematically illustrates a state in which the outer substrate supporting member of the surface of Fig. 6 is moved so that the distance between the edge of the substrate and the outermost substrate supporting structure 17 is increased. As a result, the portion of the substrate extending from the last substrate support member is increased to form the cantilever portion. Because of the clamping force exerted by the capillary clamping layer (indicated by the arrow pointing downwards), the cantilever portion of the substrate is pulled downward toward the sealing structure, and the vapor in the space around the clamping liquid The upward force generated by the pressure and the substrate curvature phenomenon is moved in the opposite direction. 4 The sagging phenomenon in the substrate reduces the gap between the substrate and the sealing structure, and the substrate is generally closed to close the gap. . The surrounding portion of the substrate is suitable for resisting the sealing structure due to the force, even when slightly bent in the substrate, it can also ensure that the surrounding portion of the substrate is in contact with the sealing structure and between the substrate and the sealing structure. The gap is closed. Thus, the cantilevered beam seal can be moved in the opposite direction to the force of the vapor pressure used to push the substrate away from the sealing edge, and can overcome some amount of bending (forward or reverse) within the substrate for substantial Increase the predictability of seal function. In order to create sufficient downward force on the surrounding portion of the substrate to form an effective seal, the cantilever portion of the substrate must be large enough and the area of the liquid layer that is to be actuated on the cantilever beam must be large enough. . The above results are obtained by arranging from the outermost substrate supporting structure 17 to the peripheral portion of the vertical liquid layer (that is, at the position of the concave surface formed on the surface of the crucible outside the liquid layer). Long distance. This 20 201142982 distance is illustrated by the distance, a" in Figure 7B. The larger clamping area below the cantilever beam will apply a correspondingly larger downward force to pull the substrate down to form A good seal for the sealing edge or raised portion 26 of the sealing structure 21. The vapor pressure present in the space between the concave liquid surface of the liquid holding layer and the sealing structure will exert an upward force on the substrate near its surrounding portion. In order to form a good seal, the downward force exerted by the inflammatory layer on the cantilever of the substrate must be large enough to offset the upward force exerted by the vapor pressure, and actuate the substrate to The sealing edges are in contact. In order to ensure that the above results are obtained, the clamping region below the cantilever portion must be sufficiently large compared to the substrate region exposed to the upward vapor pressure. In one embodiment, the distance a is Significantly greater than the distance from the concave surface of the liquid layer to the edge of the seal, this distance is represented as distance "b" in Figure 7B. For example, she θ + J and 5 distance a can be twice or more than the distance b. The above results ensure that the balance of forces on the cantilever portion of the substrate can be deflected downwards toward the sealing edge. The position of the concave surface of the liquid layer is The geometry of the substrate support structure can be changed to be defined by the surrounding portion of the reference clamping surface 16, and the surface of the substrate is formed by clamping the liquid layer thereon. The outer edge 28 of the surface is Γ力固m丄. (marked in Figure 7B). The outer edge 28 can be defined as 'for example, by the seaming, the radial direction of the inner side wall surface of the sulcus 9 In Fig. 7B, the real part 9) or the second portion 52 (:: A, the outer edge of the peripheral edge 41 (the inside of the side wall surface (Fig. 10, Fig. 17 β Fig. 12) 'the step portion 83') The inner side wall surface of L 43 (Fig. 18A), 21 201142982 or any other structure for "and the outer side edge of the clamping surface. Therefore, the substrate branch structure has a support structure from the outermost substrate support structure 1 The distance between the surrounding part of 6 (outer edge 28) is longer than Preferably, this distance is illustrated by the distance "c" in Figure 7B. Similarly, the distance c is significantly greater than the distance from the peripheral portion of the clamping surface 16 to the sealing edge or ridge portion of the sealing structure 21 Suitably, this distance is illustrated by the distance, d" in Figure 7B. In one embodiment, the distance c can be two times or more than the distance d. The above results are ensured on the cantilever portion of the substrate. The force balance condition can be deflected downwards and toward the sealing edge. In addition, the 'true distance a and the distance c are longer enough to allow the cantilever portion of the substrate to be slightly deflected downward so that it is inside the substrate. Any f-bend or deflection phenomenon (i.e., an upward biasing condition near the periphery of the substrate) can be cancelled out. The substrate support member 17 is preferably configured to provide a supporting action to the substrate in which it is located sufficiently close together (4) to avoid significant downward deflection (sagging) between the positions of the branch buildings; Elephant. The substrate branch elements can be configured in a regular pattern in which the pitch dimension intermediate the support locations is such as to avoid significant sagging in the substrate between the support locations. In some embodiments, the distance c is substantially equal to or greater than the indicated distance between the support locations, while the distance d疋 is substantially equal to or less than the indicated distance. The distance "c" is preferably greater than the indicated distance or the longest distance between the support positions of the substrate support members. For example, for a 〇775 mm thick substrate, between the support positions A pitch of 3 mm or less 22 201142982 may be employed, and a distance a of 5 mm or longer is also suitable. In one embodiment, the distance a and/or the turn c is equal to or greater than the position of the substrate branch. The distance between the longest distance in the middle is twice. The pressure applied to the cantilever beam of the substrate can be regarded as the torque from the outermost support position, and the clamping force below the cantilever beam is actuated in the downward direction' The vapor pressure is actuated in the upward direction. If the right clamping liquid layer is retracted toward the substrate support structure at any position around the liquid layer of the clamping liquid (for example, due to the evaporation of the clamping liquid), due to the clamping The area reduction and the clamping force under the main arm of the torque arm m will be reduced. #而, The upward force will remain fixed, or the force acting on the area between the concave surface and the sealing edge filled with vapor will increase. Therefore, the equilibrium state between the upward force and the downward force can be shifted, so that *there is enough lower force to provide sufficient sealing effect' and the amount of the recessed liquid surface will be retracted. Forcer"The gripper positioning solution described below can be used to prevent or reduce the occurrence of the recessed surface to the retreat condition, resulting in a longer-lasting and tighter cantilever-type vapor seal. The bottom surface of the substrate is constructed with the top of the sealing structure, and the tightness of the vapor seal is limited by the above two = surface:;; the rotation and the presence of particles, the particle system becomes stored in the above two: the substrate is placed against it The sealing layer is in contact with the second, and is used to avoid unnecessary gaps between the substrate and the & sealing structure and can significantly reduce the vapor leakage rate (compared to the arrow 74 in Figure 6). , roughly represented by a small arrow 75). The θ seal structure 21 is shaped in a manner as described above (e.g., in the discussion of Figures 4A and 4B), for example, by including a hard surface 22 or a top surface having an elastically deformable element 24, Alternatively, the sealing rim is formed by a narrow ridge portion 26 extending upward from the sealing structure 2 i shown in Fig. 7A. As previously described, there is an exchange between the wider sealing edge that is not shown in Figure 7A and the narrower edge & side of the edge shown in Figure 7B. When the substrate is properly in contact with the sealing edge, the car's wide sealing edge will form a longer flow path, providing a higher flow resistance for the leak, the vapor of the seal, but the wider sealing edge is also more valley It is susceptible to small particles, causing local deflection of the substrate and obtaining a seal # that is prone to leakage. Therefore, the optimum width of the sealing edge depends on the cleanliness of the environment in which the substrate being held is used. The sealing edge (that is, the top surface of the sealing structure, the elastically deformable element) or (4) the raised portion is placed so as to be approximately the same height as the top of the substrate member 7L, or slightly higher than or Below this high ^ is suitable for 1:. Since the substrate f is pressed down due to the cantilever entanglement mode, there is more f space in the associated positioning of the top surface or edge, and even when the sealing structure is slightly higher than the height of the substrate supporting member, The peeling action of the substrate is difficult to produce. In addition, the addition of the perimeter to prevent peeling edges will further reduce the likelihood of substrate peeling, and the higher sealing structure will aid in guiding the substrate between the substrate and the substrate. Greater sealing force and better sealing of the cantilevered beam seal will improve the duration of the gripping and reduce the leakage of the steaming, without the need for additional clamps, α ^ Η, n ^ ^ B has a card step. The cantilever beam seals are also easy to install and cost less to implement, and unlike other solutions, the cantilever beam seals do not add to the volume of the substrate support structure. The suspension #beam seal is sufficient to make the other solutions needed to extend the life of the gripper and reduce the amount of steam m. If the cantilevered seal is in an excellent condition, the vapor leakage will no longer occur and there is no need to use an additional solution such as capillary layer clamping. However, if the seal is not perfect (as in (4) seals are often the case), the substrate peeling phenomenon described below will still occur 'and thus the seal at a certain location will be destroyed, and the vapor will be clamped. The liquid layer leaks out and evaporates quickly. Accordingly, a more convenient approach is to additionally employ capillary layer positioning as described below and/or other solutions described herein to minimize substrate stripping motion and stabilize the holder. Capillary layer positioning is as mentioned first. 'The surface of the substrate support structure can be used to include areas with different capillary potential energy to affect the movement of the clamping liquid to strengthen the clip in the important area. Holder. The capillary position can be defined as the potential energy of the liquid by capillary pressure. The surface portion with higher capillary potential energy is used to attract the holding liquid, while the surface portion with lower capillary potential energy is less attractive to the clamping liquid. 25 201142982 This feature can be used to create a stream of gripping liquid that flows in a predetermined direction to ensure that the evaporative liquid at important locations can be replenished. The inventors of the present invention have found that a substrate support structure having a surface comprising different capillary potential sites results in a longer average life of the holder. Different surface locations must be configured such that a predictable capillary flow can be constructed within the clamping layer. The capillary flow can be guided by the movement of the liquid in the clamping layer, wherein the liquid in the clamping layer flows from a point having a lower capillary potential energy to a point having a higher capillary potential energy. Especially at the point of the location of the external surface with a higher evaporation rate. Depending on the particular situation, capillary flow can be guided in a predictable manner by suitably arranging different surface locations on the surface of the substrate support structure. The capillary position of the surface portion is affected in several ways. Embodiments of the invention are described throughout the description. The use of different height levels is robust == to obtain sites with different capillary potentials. A surface portion having a lower height level between the substrate and the surface portion will accommodate a relatively thick gripping liquid. The capillary position of a surface portion having a lower height level is considerably lower than that of a surface portion having a relatively high level and a relatively thin holding liquid layer. Other methods for obtaining the desired capillary potential of the surface portion include, but are not limited to, surface treatment, different material selection for each surface portion, and providing one or more coating layers on the surface portion. In the application example using water, for example, the I face portion can be made to be 26 201142982 substantially hydrophilic, or the table ® # /Λν -Γ 衣 the face can be made substantially hydrophobic Sex' or the above technology can be used by the community, σ σ. The moisture applied to the surface will then be attracted to a relatively and *hydrophilic surface site. Fig. 8A shows the concept of substrate peeling. In this application example, the right hand side of the substrate is raised, thereby increasing the dice surface of the clamping layer η at this position & the substrate 12 is raised, and more vapor will leak to Close to the vacuum system in the raised area of the substrate... To compensate for the loss of vapor, the evaporation of the liquid is also increased by σ. In addition, the lifting action of the substrate causes the material portion surface 22 to be elongated near the raised region of the substrate 12. This elongation phenomenon leads to (2) a decrease in the curvature of the liquid surface, that is, a reduction in the outer surface of the concave portion. Μ As mentioned earlier (4), the reduced concave external surface is caused by a small pressure difference across the surface. Since the helium pressure along the outer surface is maintained approximately the same, the pressure difference within the clamping layer i i will rise. In Fig. 8A, the pressure in the clamping layer on the right outer surface is greater than the pressure in the clamping layer on the left outer surface. Or in other words, on the left side. The capillary surface energy of the P surface is higher than the capillary potential energy on the right outer surface and causes the capillary flow in the sandwich layer to be directed from the right side to the left side, generally indicated by white arrows. This capillary flow enables the outer surface 18 on the left to maintain its original position. On the other hand, if the left outer surface does indeed retreat to form the outer surface 18, the capillary flow is outlined by a double arrow. Located on the right hand side of the disarmer in Figure 8A, the capillary flow causes the outer surface 22 of the grip layer U to retreat in the direction generally indicated by the arrow. Since the liquid below the substrate 12 is removed, the area covered by the sandwich layer n will shrink. The lack of clamping force on the right hand side 27 201142982 will cause the edge of the substrate 12 to be further raised, which in turn causes further deterioration of the holder and, ultimately, failure of the holder. Figure 8B schematically illustrates the concepts employed in several embodiments of the present invention. The inventors of the present invention have appreciated that similar differences in the curvature of the concave surface are guided by the composition of the substrate support structure 13 having surfaces containing portions of different height levels. In Fig. 8B, the element 5'' represents a portion having a surface of the substrate supporting structure which is horizontally protruded from the remaining surface. In the balanced state, the concave liquid surface on the left-hand side and the concave liquid surface on the right-hand side have substantially the same curvature. As a result of the evaporation, the outer surface 丨8 on the upper two sides is slightly backward. As can be seen from the figure, between the substrate 12 and the substrate supporting structure 丨3, in the area covered by the element 50. The liquid grip layer at the location is less than the height of the liquid grip layer 11 at the location that has not been covered by the component 5 . The retraction of the outer surface 18 at the left hand side will result in a decrease in the height of the recess and an increase in its curvature. At the right hand side, the retraction of the outer surface is not important for the size and shape of the recess. influences. The result is that the capillary flow is directed (indicated by a white arrow) in a similar manner as discussed with reference to Figure 8A. The capillary flow allows the liquid around the clamping layer at the left hand side to be replenished so that the outer surface j 8 can return to its original position while the outer surface 位于 at the right hand side is oriented further from position 2 2 The position is back. Figure 9 is a cross-sectional view of a substrate supporting structure 13 for supporting a substrate 2 according to an embodiment of the present invention. The substrate support structure of Fig. 9 丨 3 package 28 201142982 The peeling or gripper positioning edge 41. The peripheral edge 4i has a short distance between the substrate 13 and the substrate 12 < The distance between the substrate support structure 13 and some; 1 2 $ _, 3 is the height h in Fig. 1, and the degree h is usually about 3 to 1 μm. Between the peripheral edge 4i, the distance between the substrates U is generally in the range of 5 〇〇 to 15 μm. The peripheral edge 41 has a height that is less than the nominal height of the contact elements provided on the surface 16 of the substrate support, 13; Without being bound by theory, the surrounding edge 41 is referred to Figure 10A to Figure

1〇C所描述之方式’用以限制基板剝離動作，其中圖10A 到圖10C表示出具有夾持層之基板支架的上視圖。雖然周 圍邊緣的出現是已參考圖9來加以討論，此種周圍邊緣 4!的使用並不限於是此項實施例，但是可以被使用於在此 所描述之任何其他實施例。 首先，隨著液體從外部表面8蒸發出去，外部表面8 將往後退至介於周圍邊緣41與基板12之間的小間隙内。 由=不均句的蒸發作用產^，如同在圖1QA中概略表示之 内谷’外部表φ 8將有局部進—步往内後退。介於周圍邊 緣41與基板12中間之小間隙上方的壓力差是遠大於在主 要夾持區域内之壓力值’亦即是分別為大約i巴對上大約 2〇毫巴。換言之，在周圍邊緣41之毛細管位能是大於在主 要夾持區域内之毛細管位能。當外部表面8因為蒸發作用 而到達周圍邊緣之内側表面時，表面則將碰觸到介於基 板12與基板支撐結構13之間的較長距離。如同在圖_ 29 201142982 中T略表示之内容，在以上區域内之較小壓力差將會導致 y里液體流入至介於周圍邊緣41與基板丨2之間的間隙 内如H 1 oc之所示，液體將持續流動，直到介於周圍邊 緣41與基板12之間的間隙被完全填充為止。空穴則將被 留存於主要夾持區域内。整個空穴是被液體層所圍繞。由 於蒸發作用所產生之毛細管夾持區域流失情形則是實際上 已往内側移動”卜部毛細管表面維持於相同位置處。結果 導致基板邊緣將不容易被剝離’ i夾持器的使用壽命被延 長。藉由避免或減少剝離作用之發生，周圍邊緣41亦可用 以降低蒸氣的茂漏’以上結果則是藉由避免導入間隙或是 避免增加介於基板與在基板支I结構周圍處之密封結構中 間的間隙尺寸。 圖11A概略表示出依照本發明實施例之基板支撐結構 :16的上視圖。為了清楚表示之目的，在其他圖形出現 之若干額外結構（例如县其士 _ # (例如疋基板支m冓和/或密封結 聋）、未在圖11A中被表示出來。在此項實施例中 包，二不同高度水平之部位。具有第一高度水平之表面部 位疋以線條區域（沿著從左側頂部到右側底部之方向來力 以條紋）來表示文中被稱為第-部位5卜且有： 兩度水平之表面部位是以未具條紋區域來表示，在下文： 被稱為第二部位5 2。 中 第-部位51之高度水平是低於第二部位52之 平。倘若液體夹持層是成形於基板支樓結構表面Μ:;: 上’位於第二部位52之頂部上的液體夾持層厚度將會小於 30 201142982 液體夾持層位於第一部位51之頂部上的厚度，例 日 2到4微米，以是3微米為較適宜，對上： 是5微米為較適宜。 域未’以 圖11Β概略表示出圖UA之基板支撐姓 持液體層覆蓋住的上視圖（夹持液體層是二沿著 部到右側頂部加上條紋之條紋輪扉來概略表示）。:車 清楚地相，基板並未被表示於圓形卜液體夹持層之外 部表面是明顯地與基板支樓結構表面i 千（亦即疋第二部位52)的部位相接觸。然而，位 位置處（亦即是以元件符號54標示之位置 志 是與基板支撐結構表面16之具有低高度水平（亦^是卜 位5 1 )的部位相接觸。如同參考圖8Β所解釋之内容 部表面的往後退動作係集中於間隙位置處，此間隙2 一步被稱為犧牲間隙。 ’、 進 在圖11Β中，夾持液體之外部表面正沿著在溝槽55内 之大型黑色箭頭的方向往後退。如同參考圖8 :釋”容’毛細管流（在圖"Β中是以白色箭頭來概略 表不）疋於炎持層内被導引生成。毛細管流容許用 體供應至與第二部位52相接觸之液體夾持層的外部表面， 用以限制住夾持液體層之外部表面的往後退動作j此H 退動作的產生係由於在與第二部位52相接觸之周圍二 發作用（小型黑色箭頭）所導致。 “、、 介於第一部位51之高度水平與第二部位 千中間的向度差是使得流動阻力能夠被毛細管壓力差所克 31 201142982 服°此外’為了要避免外部表面在與第二部位52相接觸之 夾持層周圍處產生往後退動作，毛細管流的流動速率可以 被配置成使得以上流動速率能夠與位於夾持層外部表面處 之夾持液體的蒸發速率維持一致。 藉由容許外部表面於特定預設位置（亦即是外部表面 被安置用以與第一部位5 1相接觸之位置）處產生往後退動 作，以及補償來自外部表面之其餘部份（亦即是外部表面 與第一部位52相接觸之位置）的夾持液體蒸發作用，在夾 持之加工過程中，大部份的液體夾持層之外部表面是維持 於定位。 在此項實施例令，溝槽55係作為液體之犧牲來源，用 以將藉由來自夾持液體層周圍處之外部表面的蒸發作用所 流失之液體加以重新補充。液體是藉由毛細管流而從溝槽 内被抽取，且液體是流到第二（較低）部位52之上方，用 以將位於沿著基板支撐結構周圍處之第一（較高）部位51 的液體加以重新補充。隨著更多的蒸發作用產生，在溝槽 内之液體的外部表面將沿著溝槽長度而往後退，逐漸將溝 槽清空，用以將位於沿著周圍之第一部位51的夾持層加以 重新補充。結果導致夾持器的使用壽命能夠被延長。 第°卩位5 1和第二部位5 2之分佈狀況的設計，連同 個或更夕個犧牲間隙54之所在位置和數目可以決定夾持 器的使用壽命能夠延長到多久。在圖丨1A、圖丨1B中所示 之设什方式表示出單一位置係沿著具有較低高度水平之基 板支撐結構表面的周圍，亦即是用於開發得到犧牲間隙之 32 201142982 單-選項。為了要拉長夾持層外部表面經由單一犧牲間隙 而僅有往退後動作發生期間的時間，第一部位η包含型式 為溝槽55之部位。此種溝槽之寬度以是小於基板支樓元二 (例如是結節部位）之節距為較適宜。舉 ^ 彳而s ’倘右結 郎部位的卵距是大約3毫米，溝槽的寬度可以是大約〇5到 3毫米，例如是1.5毫米。 為了要進-步延長夾持器的使用壽命，溝槽可以包含 彎曲部位。在一項甚至是更進一步之實施例中溝槽可以 是螺旋的樣式，螺旋樣式之應用實例被概略表示於圖Μ 中。此溝槽之長度可以是非常長。舉例而言’在基板直徑 為300毫米，以及於液體失持層内之可容許空穴區域為全 部區域之20%的應用實财，具# 15毫米寬度之溝槽將 可到達6000.毫米的長度。如此長的溝槽長度將會增加於夾 持層外部表面之特定預設位置處產生蒸發作用的所 間。 在圖11A、圖11B之實施例中，從預設位置54往外延 伸之溝槽係沿著具有較低高度水平之周圍。預設位置54被 女置成使得夾持層之外部表面能夠如同一開始被設置之方 式而與溝槽相接觸。 在圖12之實施例中的溝槽並非是於基板支撐結構表面 之周圍處開始成形，反而是於沿著徑向略微往内之位置處 開始成形。此位置容許液體夾持層能夠穩定存在，使得液 體夹持層之外部表面亦被安置於從基板支撐結構表面之周 圍算起的較短徑向距離處。如同以下所討論之内容，結果 33 201142982 關之其他影響將被減 導致邊緣之影響連同與凝結作用相 yj、 〇 雖然圖11A、圖11B係描述具有單_犧牲間隙之表面 的實施例，基板支料構之表面料方式是可以被容許開 發得到多重犧牲間隙。更多個犧牲間㉟（例如是沿著夾持 層外部表面之周圍處而彼此之間是相等距離的三個犧牲間 隙）將會減小毛細管流的距離，此毛細管流距離則是介於 後退表面的位置與沿著有液體被供應至其中之夾持層外部 :面的所在位置中間。結果導致用於導弓丨出毛細管流之所 需驅動作用力係用以重新將液體供應至被安置於第二部位 52之頂部上的外部表面，使得液體夾持層之外部表面能= 維持於在以上it些可能被縮小之所在位置處之原有位置。 實驗模擬得到之基板支撐結構是具有包含二個不同高 度水平的表面，二個不同高度水平已被表示出以上結果2 有利於將具有相較於一個或更多個到達表面區域之溝槽是 較低高度水平之表面部位的佔有百分比限制住以上表面 部位所覆蓋的比例是小於液體夾持層全部區域之25%，以 是小於液體夾持層全部區域之20%為較適宜。倘若一個或 更多個溝槽覆蓋住更多空間，藉由使用具有不同高度水平 之基板支撐結構所導致的改良過夾持性能將孓以被降低。 倘若預先存在之氣泡出現於被用來準備液體夾持層的 夹持液體中，如同在圖13A和圖13B所概略說明之内容， 失持器被導入至真空環境内之結果將會造成在夾持層内的 氣泡變膨脹。倘若外界壓力減小，例如是從i巴降低至2〇 34 201142982 到40毫巴，在夾持液體為水之應用實例中，以上壓力值係 為在液體夾㈣外部表面之圍繞環境巾的-般蒸氣墨力 值，如同在圖UA中所示之—開始是小型氣泡61的尺寸將 會膨脹至如同在圖13B中所示之數十倍大小。如同先前已 看到之内容，.在圖UB中之氣泡61的尺寸將會嚴重影響到 夾持作用之強纟’至少是具有局部性的影響，且對於夹持 器之穩定性是具有負面影響。 另外一種可能導致夾持器不穩、定性i生之機制是自發 I·生工八的成形’例如是藉由在夹持層内之液體渦漩真空現 象或是藉由溶解氣體沈澱作用來產生。倘若A持器被提供 於真空環境中’相較於其中所預先存在之氣泡，藉由渦漩 真空現象所成形之空穴則是以如同先前所討論之相同方式 變膨脹。所成形之空穴對於夾持器之穩^性是具有負 響。 基板支撐結構13之實施例是類似於在圖2A中所示之 實施例’以上實施例可以被設計成使得璇渦真空作用能夠 破減到最，卜毋須受到理論之限制，應瞭解的是其中具有 用於孔穴之重要半徑。倘若孔穴之半徑大於此重要半徑， 孔穴將膨脹得太大。藉由將基板支#結構13設計成使得夾 持層之組成是具有最小尺寸（亦即是厚度h)，此最小尺寸 :是小於以上重要半徑’旋渦真空現象得以被大幅度地限 ，住。實驗結果已表示出具有3到1G微米最大厚度h之水 夹持層中並未出現旋渦真空現象。 隔間 35 201142982 圖14概略說明可以被使用於一些實施例中之空穴封入 的觀念。在這些實施例中，表面進一步具有用於組成若干 隔間之凸起結構63。在準備爽持層之過程中，倘若有小型 氣泡ό 1存在’例如是在圖1 〇A中所示之氣泡，由於外界壓 力如同在圖1 0Β中所示之方式減小，氣泡不再膨脹朝向大 型空穴，氣泡61的膨脹作用則是受到凸起結構63之限制。 接著’膨脹氣泡的最大尺寸是由將氣泡封閉之隔間尺寸來 決定。另外’除了將氣泡61之膨脹限制住以外，藉由凸起 結構6 3所組成之隔間可以被配置用以將氣泡61局限住。 氣泡之運動受到限制的結果則是能夠改善夾持器的穩定 性。由於凸起結構63的出現，自發性空穴發展和/或漩渦真 空現象的影響因而能夠被進一步減小，進而導致夾持器的 可靠度和穩定性得到改善。 圖15為依照本發明另一實施例之基板支撐結構的上視 圖。在此項實施例中，與在圖12中所示之實施例相類似， 第ρ位51之至少一部份是具有樣式為螺旋形狀溝槽的較 低高度水平。與在圖12令所示之實施例做對比，螺旋形狀 使得具有較低高度水平的表面部位51能夠被均勾地分佈於 基板支樓結構表面16之上方。此外，表面16具有用於組 成隔間65之凸起結構，用以容許採用參考圖14所描述之 方式來將氣泡限制住。 段差緣溝 圖16Α概略表示出藉由在使用液體夹持層之基板支樓The manner described in 1C is used to limit the substrate peeling action, wherein Figs. 10A to 10C show top views of the substrate holder having the holding layer. Although the appearance of the peripheral edges has been discussed with reference to Figure 9, the use of such peripheral edges 4! is not limited to this embodiment, but can be used with any of the other embodiments described herein. First, as the liquid evaporates from the outer surface 8, the outer surface 8 will recede into a small gap between the peripheral edge 41 and the substrate 12. By the evaporation of the = inhomogeneous sentence, as shown in Fig. 1QA, the inner valley 'outer table φ 8 will have a partial advance step backward. The pressure difference above the small gap between the peripheral edge 41 and the substrate 12 is much greater than the pressure value in the main clamping region, i.e., about 2 mbar on the i-bar pair, respectively. In other words, the capillary energy at the peripheral edge 41 is greater than the capillary potential within the primary clamping region. When the outer surface 8 reaches the inner side surface of the peripheral edge due to evaporation, the surface will touch a relatively long distance between the substrate 12 and the substrate support structure 13. As indicated by T in Figure _ 29 201142982, a small pressure difference in the above region will cause the liquid in y to flow into the gap between the peripheral edge 41 and the substrate 如 2 such as H 1 oc. It will be shown that the liquid will continue to flow until the gap between the peripheral edge 41 and the substrate 12 is completely filled. The holes will remain in the main clamping area. The entire cavity is surrounded by a layer of liquid. The loss of the capillary clamping area due to evaporation is actually moving to the inside. The surface of the capillary is maintained at the same position. As a result, the edge of the substrate will not be easily peeled off. The service life of the holder is extended. By avoiding or reducing the occurrence of peeling, the peripheral edge 41 can also be used to reduce the leakage of vapor. The above result is achieved by avoiding the introduction of a gap or avoiding an increase between the substrate and the sealing structure around the structure of the substrate I. Figure 11A is a schematic top plan view of a substrate support structure: 16 in accordance with an embodiment of the present invention. For additional purposes, additional structures appearing in other graphics (e.g., county _# (eg, 疋 substrate branch m)冓 and/or sealing 聋), not shown in Figure 11A. In this embodiment, the package has two parts of different height levels. The surface portion having the first height level is lined with the line area (along the left side) The direction from the top to the bottom of the right side is used to indicate the first part of the text and is: the surface of the second level. It is represented by an unstriped area, hereinafter: referred to as a second portion 52. The height level of the first portion 51 is lower than that of the second portion 52. If the liquid clamping layer is formed in the substrate branch The surface of the structure Μ:;: the thickness of the upper liquid holding layer on the top of the second portion 52 will be less than 30 201142982 The thickness of the liquid clamping layer on the top of the first portion 51, for example 2 to 4 microns, to It is more suitable for 3 micrometers, and it is more suitable for upper: 5 micrometers. The domain is not shown in Fig. 11Β. The top view of the substrate support of UA is covered by the liquid layer (the liquid layer is sandwiched along the second section). To the top of the right side, add the striped stripe rim to the outline).: The car is clearly phased, the substrate is not shown on the outer surface of the circular liquid clamping layer is obviously the surface of the substrate supporting structure i thousand (also That is, the portion of the second portion 52) is in contact. However, the position at the bit position (i.e., the position indicated by the symbol 54 is a low level with the substrate support structure surface 16 (also ^bit 5 1 ) The parts are in contact. As explained in Figure 8 The retreating action of the surface of the content portion is concentrated at the gap position, and the gap 2 is referred to as a sacrificial gap in one step. ', In Fig. 11A, the outer surface of the clamping liquid is along the large black in the groove 55. The direction of the arrow is backwards. As shown in Fig. 8: the release of the "capacitance" capillary flow (in the figure "Β is outlined by a white arrow) is generated in the inflammatory layer. The capillary flow allows the supply of the body. To the outer surface of the liquid clamping layer in contact with the second portion 52 for restricting the retracting action of the outer surface of the liquid layer to be clamped, the H retreating action is due to contact with the second portion 52 Caused by the surrounding two-effect (small black arrow). ",, the difference in the height between the height level of the first portion 51 and the second portion is such that the flow resistance can be overcome by the capillary pressure difference 31 201142982 'In order to avoid the outward surface creating a retreating action around the clamping layer in contact with the second portion 52, the flow rate of the capillary flow can be configured such that the above flow rate can be placed in the clamp The evaporation rate of the gripping liquid at the outer surface of the layer is maintained to be uniform. By allowing the outer surface to be retracted at a particular predetermined position (ie, where the outer surface is placed in contact with the first portion 51), and compensating for the remainder from the outer surface (ie, The clamping liquid evaporates at the location where the outer surface is in contact with the first portion 52. During the clamping process, the outer surface of most of the liquid clamping layer is maintained in position. In this embodiment, the grooves 55 serve as a source of sacrifice for the liquid to replenish the liquid lost by evaporation from the outer surface surrounding the liquid layer. The liquid is drawn from the trench by capillary flow and the liquid flows over the second (lower) portion 52 for placing the first (higher) portion 51 along the periphery of the substrate support structure. The liquid is replenished. As more evaporation occurs, the outer surface of the liquid within the trench will recede along the length of the trench, gradually emptying the trench for placing the sandwich layer along the first portion 51 along the perimeter. Replenish it. As a result, the life of the gripper can be extended. The design of the distribution of the first 5 position 5 1 and the second portion 5.2, together with the position and number of the sacrificial gaps 54 or more, can determine how long the life of the holder can be extended. The manner shown in FIG. 1A and FIG. 1B shows that a single position is around the surface of the substrate supporting structure having a lower height level, that is, for developing a sacrificial gap 32 201142982 Single-option . In order to lengthen the outer surface of the clamping layer via a single sacrificial gap and only during the time during which the retracting action occurs, the first portion n comprises a portion of the pattern 55. The width of such a groove is preferably smaller than the pitch of the substrate member (e.g., the nodule). For example, if the egg distance of the right knot is about 3 mm, the width of the groove may be about 5 to 3 mm, for example, 1.5 mm. In order to further extend the life of the holder, the grooves may contain curved portions. In an even further embodiment the groove may be in the form of a helix, and an application example of the spiral pattern is schematically illustrated in Figure 。. The length of this groove can be very long. For example, 'the diameter of the substrate is 300 mm, and the allowable hole area in the liquid loss-holding layer is 20% of the total area. The groove with a width of 15 mm will reach 6000. length. Such a long groove length will increase at a certain predetermined position on the outer surface of the grip layer to cause evaporation. In the embodiment of Figures 11A, 11B, the grooves extending from the predetermined position 54 are along a circumference having a lower level of height. The preset position 54 is placed such that the outer surface of the grip layer can be brought into contact with the groove as if it were initially set. The groove in the embodiment of Fig. 12 is not formed at the periphery of the surface of the substrate supporting structure, but is formed at a position slightly inward in the radial direction. This position allows the liquid grip layer to be stably present such that the outer surface of the liquid grip layer is also placed at a shorter radial distance from the periphery of the substrate support structure surface. As discussed below, the result 33 201142982 will be reduced to other effects that will result in edge effects along with the condensation phase yj, 〇 although FIGS. 11A, 11B depict embodiments having a single-sacrificial gap surface, substrate support The surface material of the material structure can be allowed to develop multiple sacrificial gaps. More sacrificial spaces 35 (for example, three sacrificial gaps at equal distances from each other around the outer surface of the clamping layer) will reduce the capillary flow distance, which is between The position of the surface is intermediate the location of the face: the face along which the liquid is supplied. The result is that the required driving force for guiding the capillary flow is used to resupply the liquid to the outer surface placed on top of the second portion 52 such that the external surface energy of the liquid clamping layer is maintained at In the original position where it may be reduced. The substrate support structure obtained by the experimental simulation has a surface containing two different height levels, and two different height levels have been shown to result in the above results. 2 It is advantageous to have a groove which is compared with one or more reaching surface areas. The percentage of the surface portion of the low height level limits the coverage of the surface portion to be less than 25% of the entire area of the liquid clamping layer, so that it is preferably less than 20% of the entire area of the liquid clamping layer. If one or more of the grooves cover more space, the improved over-clamping performance resulting from the use of substrate support structures having different height levels will be reduced. If pre-existing bubbles appear in the gripping liquid used to prepare the liquid grip layer, as outlined in Figures 13A and 13B, the result of the introducer being introduced into the vacuum environment will result in a clip. The bubbles in the holding layer expand. If the external pressure is reduced, for example, from i bar to 2〇34 201142982 to 40 mbar, in the application example where the liquid is water, the above pressure value is around the outer surface of the liquid clamp (4) - The vapor pressure value, as shown in Figure UA, begins with the size of the small bubble 61 expanding to a tens of times as large as shown in Figure 13B. As has been seen previously, the size of the bubble 61 in Figure UB will seriously affect the strength of the clamping action', at least with a localized effect, and has a negative impact on the stability of the holder. . Another mechanism that may cause the gripper to be unstable and qualitatively imitate is the formation of spontaneous I·many eight, for example, by liquid vortex vacuum in the clamping layer or by precipitation of dissolved gas. . If the A holder is provided in a vacuum environment, the voids formed by the vortex vacuum phenomenon expand in the same manner as previously discussed, as compared to the pre-existing bubbles therein. The formed holes have a negative effect on the stability of the holder. The embodiment of the substrate support structure 13 is similar to the embodiment shown in Fig. 2A. The above embodiment can be designed such that the vortex vacuum effect can be reduced to the maximum, which is subject to theoretical limitations. Has an important radius for the hole. If the radius of the hole is larger than this important radius, the hole will expand too much. By designing the substrate support structure 13 such that the composition of the sandwich layer has a minimum dimension (i.e., thickness h), the minimum dimension: is less than the above important radius. The vortex vacuum phenomenon is greatly limited and lived. The experimental results have shown that there is no vortex vacuum in the water-carrying layer having a maximum thickness h of 3 to 1 Gm. Compartment 35 201142982 Figure 14 schematically illustrates the concept of cavity encapsulation that can be used in some embodiments. In these embodiments, the surface further has a raised structure 63 for forming a plurality of compartments. In the process of preparing the cooling layer, if there is a small bubble ό 1 present, for example, the bubble shown in Fig. 1A, since the external pressure is reduced as shown in Fig. 10, the bubble is no longer expanded. Facing the large cavity, the expansion of the bubble 61 is limited by the convex structure 63. The largest size of the expanded bubble is then determined by the size of the compartment in which the bubble is closed. In addition to the restriction of the expansion of the bubble 61, the compartment formed by the raised structure 63 can be configured to confine the bubble 61. As a result of the limited movement of the bubbles, the stability of the holder can be improved. Due to the occurrence of the raised structure 63, the effects of spontaneous hole development and/or vortex vacuum can be further reduced, resulting in improved reliability and stability of the holder. Figure 15 is a top plan view of a substrate supporting structure in accordance with another embodiment of the present invention. In this embodiment, similar to the embodiment shown in Fig. 12, at least a portion of the p-th position 51 is of a lower height level having a pattern of spiral-shaped grooves. In contrast to the embodiment shown in Figure 12, the spiral shape allows surface portions 51 having a lower height level to be evenly distributed over the substrate floor structure surface 16. In addition, the surface 16 has a raised structure for forming the compartment 65 to permit confinement of the air bubbles in the manner described with reference to FIG. Segment gap groove Figure 16 is a schematic representation of the substrate branch by using a liquid clamping layer

結構内凝結現象所產斗沾你田 V %A> A 豕所產生的作用。當蒸亂被冷卻至其露點溫 36 201142982 度時’凝結現象將會發生。露點則是依據類似溫度、體積 和麼力等參數而定。倘若基板12之溫度是足以比蒸氣溫度 還要更冷’存在於區域19内’沿㈣於將外部夾持表面Μ 限制住之緣溝的蒸氣是可以被凝結於基才反i2 i。因此，如 同虛線箭頭所概略表示之内容，成形之凝結液滴η係沪著 基板表面來移動。偶若凝結液滴18朝向夹持層"之;;部 表面18來移動，液滴81將會被夾持層u所吸住，造成在 夾持層内的液體容量增加。如同參考蒸發作用所討論之内 容，所增加的液體將被均勻地分佈至整個夾持層中。 然而，倘若夾持層所具有之外部表面於二側邊處是帶 有相等的内凹表面’以及液滴的被吸收量是足夠大時，液 體的均勾分佈結果將會造成基板暫時產生局部變形，亦即 是波動現象將於基板之下方來移動，且基板因 應。 a /生王汉 為了要將因為吸收凝結液滴所產生之暫時局部變 象限制住，基板支撐結構13之表 叫0 J以抹用在圖16B 令所概略表示之方式來修正。基板支撐結構η於具有略微 較低尚度之表面周圍處是包含段差部纟83。表 位則是具有如同在圖丨6B中所示 古 ^、 、° 丁之早问度水平，但是 二以具有不同高度水平之部位，例如是具有參考圖11A、圖 BH2115和圖17A所表示和討論之外形輪廊。 由於較低段差部位83的出現，當液滴心㈣ 層之外部表面將膨脹至其中夹持層厚度是較厚的區域内。 結果導致藉由吸收液滴所產生的液體流動現象將會被制 37 201142982 止。相較於在沿著液體夾持層外部表面之其他位置處的凹 液面曲率，由於夾持層中覆蓋著較低段差部位之凹液面曲 率被減小’毛細管流將會被導引產生，用以容許外部表面 朝向在圖16 A中所示之位置往後退。由於以上的阻尼作用， 如同參考圖16 A所討論之基板12的暫時局部變形現象將會 被限制住。 實驗結果已表示出介於段差限制用部位83之高度水平 與主要夾持表面中間的適宜高度是與基板支撐結構17之標 稱高度一致。換言之，基板支撐結構17之高度和限制用部 位83之深度以是相等為較適宜。限制用部位83可以被用 來邊衝暫存用於基板支樓結構之任何實施例的夾持液體。 蛇形溝槽 圖ΠA為依照本發明另一實施例之基板支撐結構的上 視圖。在此項實施例中，參考先前實施例所討論之若干特 色被結合起來。圖17B為圖17A之基板支撐結構中一部份 的橫剖面視圖，以及圖17C為基板支撐結構中一部份的橫 剖面視圖，其中表示出用於不同結構元件之可能高度變化^ 在圖17A之實施例中，表面16具有成形於較高部位52 之間的溝槽55。溝槽是從位於周圍處之犧牲間隙，被往内 導引朝向中心，接著，從中心被往外導引朝向基板支撐結 構之周圍。在此項實施例中，溝槽是蛇形樣式。隨著夾持 液體從外部周圍處被蒸發出去，如同先前所描述之内容， 液體是從溝槽被抽取。溝槽的清空動作係開始於在沿著溝 槽長度之方向内的犧牲間隙處’朝向中心，接著，往後朝 38 201142982 向周圍。由於位於夹持液體層之外部表面處的蒸發作用是 從溝槽抽取液體，此項結果導致溝槽接近周圍處之最外側 Η刀疋最後才被清空。藉由長時間來將全部液體維持住， 溝槽之最外側部份能夠長期將夹持液體層之位於周圍處的 最重要部份所需之液體予以重新補充，因此，進—步 夾持器的使用壽命。 在夾持液體層内之流動阻力係隨著液體流動之距離而 =，同時，用於克服以上流動阻力之毛細管昼力則是不 _距離而依然維持一致。與在圖ΠΑ中所 似的蛇形溝槽樣式將會減小毛細管流所需行經之距離，用 以於當大致上蒸發作用已發生和溝槽已有部份被清空之狀 況下’將液體重新補充至夹持液體層之外部表面。甚 =上蒸發作用已發生之後’溝槽之外側部位依然具有用 :近夹持液體層外部表面之毛細管流所需的液體來源。 計:式Τ接近夾持層外部表面之溝槽避免 广“部位’沿者夹持層之液體必須流入到 :爲由於較短的流動距離係用以將液體重新補充至 ^之周圍處的外部表面，此種設計方式對於流動阻力的 負面景> 響則是較不敏感。 二：為圖17A之設計方式中—部份的立體剖面視 …周圍密封結構21、具有用於緩衝;=== 二制用部…緣溝19、周圍邊緣41或是夾持液體層又 卜4表面成形於其上的第一（較高 ha具有分隔 39 201142982 用凸起結構63之隔間65、圍繞著溝槽55之第一部位52b， 以及用於將基板支撐住之基板支撐元件17。 圖17C表示出具有用於不同元件之高度水平變化的構 形。此種設計方式包含至少五個高度水平hi到h5。緣溝 |9之底部高度h 1係為對於夾持作用之操作並無任何實際影 響的第二高度水平。基板支撐結構之最低高度是限制用部 位83的高度水平h2，例如是在凝結作用之應用實例中，限 制用部位83是用以緩衝暫存夾持液體。在此項實施例中之 南度水平h3是其餘表面部位的較低高度水平5 1，其中包括 溝槽55和隔間65。在此項實施例中，高度水平h4是周圍 邊緣,21之高度水平連同圍繞著溝槽55之較高部位μ的高 度j平，以及凸起結構63係用以組成被用來將空穴和如同 先別所解釋之類似部位加以^位之隔$ 65。最後 特定實施例中之高度水平h5是與基板支稽元件17和密封 結構21之水平高度一致。 液體儲存槽 液體之健存槽亦是可以被提供用以蒸發進入至沿著夹 持液體之區域内，用以降低來自爽持層之蒸發量。在圖18A 中所不之基板支樓結構13進一步包含液體儲存槽40。液體 储存槽40被構形用以容納特定容積之液體（例如是水）， 声、纟用以儲存此液體之蒸氣。此外，當毛細管夹持 I 11存在時，液體儲存槽被配置用以提供蒸氣予毛細管夾 摇’例如是經由—個或更多個溝槽43。儲存槽可以被 體錯存槽4G。在儲存槽内之儲存槽液體則以是與在 201142982 用於儲存槽液體和夾持 夾持層11内之液體相同為較適宜。 液體之適宜液體是水。 的屮：七、另一忐夠產生蒸氣之液體來源，液體儲存槽 用二：提供用以進一步減小來自夾持層11之液體蒸發作 卩存槽内之液體的自由表面區域以是大於夾持層U 卜部表面18的自由表面區域為較適宜。在所示之實 "，儲存槽是組成於基板支撐結構表面16之下方，以 $向延伸之Α型空間。儲存槽的延伸 :制，例如是在環形孔穴之樣式中，環形孔穴所具有之； ::延伸於表面16以下之小型距離所需的内側邊緣處。另 夕卜-方面，儲存槽在表面之下方亦是可以是無法延伸，儲 予才曰例如是被限制於在一些其他實施例中所示之緣溝19。 在與外部表面18相鄰接之空間内的蒸氣量係藉由每一 個液體來源所提供’以上蒸氣量則是依據在空間内之液體 ^由表面區域的相對尺寸而定。儲存於儲存槽内之液體的 較大自由表面區域能夠確保得到足夠的蒸氣量，用以將表 面18之環境弄濕，導致來自夾持層11之蒸發作用減小。 液體可以將儲存槽完全充滿，或是將儲存槽部份充 =，留下如同在圖18Α和圖18Β中所示之液體上方的蒸氣 工間。藉由一個或更多個氣體入口 43之作用，蒸氣可以從 液體儲存槽40被輸送朝向夾持層11之外部液體表面Μ。 在此種應用實例中，於氣體分配系統中所使用之氣體是經 由閥門45而被提供至基板支撐結構，閥門45亦是被用以 將液體提供至液體儲存槽40。 41 201142982 ,j外-方面，氣體可以經由一個或更多個單獨的氣體 連接單元來提供M尚若此種氣體連接單元被構形用以經由 -個或二多個溝槽43來提供氣流，以上溝槽43則是被用 來將蒸氣提供至毛細管層’一個或更多個溝槽α可以具有 机里=制早兀44，此流量控制單元44被構形用以經由氣體 連接單元而能夠從來自儲存槽4〇之蒸氣中分離出氣流。在 另外一項實施例中’整個氣體分配系統是與一個或更多個 元件分隔開來，用以將來自蒸氣儲存槽4〇之 持器。 β當溫度較高（例如是攝氏3G度）時，儲存槽導致凝結 問題的產生。#由調節基板支樓結構之受熱狀況，以上凝 結問題能夠被減輕。儲存槽亦是需要額外的準備步驟（例 如是用以確保儲存槽被充滿）’以及將容積增加至基板支 樓結構。然而’儲存槽可以被使用於夾持器所需使用壽命 是特別長之應用（例如是密封結構或懸臂梁式密封件和儲 存槽之組合是必須的）’或是被使用於難以組成有效密封 件之應用（例如是在以下之狀態，其中基板的底部表面太 粗趟，而無法容許得到適宜密封件來確保夹持器具有足夠 的使用壽命卜當較高的蒸氣茂漏速率是可以被容許時， 儲存槽亦是可以被使用（例如是儲存槽可以被用來取代密 封結構），或是在較低溫度下操作（例如是在攝氏2〇度下， 凝結問題將會是最小）。The effect of condensation in the structure is the effect of your field V %A> A 豕. Condensation will occur when the steaming is cooled to its dew point temperature of 36 201142982 degrees. The dew point is based on parameters such as temperature, volume and force. If the temperature of the substrate 12 is sufficiently colder than the vapor temperature to be present in the region 19, the vapor along the edge of the outer clamping surface Μ can be condensed to the base. Therefore, as shown by the outline of the dotted arrow, the formed condensed droplets η move on the surface of the substrate. Even if the condensed droplets 18 are moved toward the nip layer; the surface 18 is moved, the droplets 81 will be attracted by the nip u, causing an increase in the volume of liquid in the nip. As discussed with reference to evaporation, the added liquid will be evenly distributed throughout the clamping layer. However, if the outer surface of the clamping layer has an equal concave surface at both sides and the absorbed amount of the liquid droplets is sufficiently large, the uniform distribution of the liquid results in a temporary localization of the substrate. The deformation, that is, the wave phenomenon, moves below the substrate and the substrate responds. a / Sheng Wang Han In order to limit the temporary local deformation caused by the absorption of the condensation droplets, the surface of the substrate support structure 13 is called 0 J to be corrected by the manner schematically shown in Fig. 16B. The substrate supporting structure η includes a step portion 83 at the periphery of the surface having a slightly lower degree. The epitope is the same as the early level of the ancient ^, , and D, as shown in Fig. 6B, but the two have different height levels, for example, with reference to Fig. 11A, Fig. BH2115, and Fig. 17A. Discuss outside the shape of the corridor. Due to the appearance of the lower step portion 83, the outer surface of the layer of the droplet core (4) will expand into a region where the thickness of the layer is thicker. As a result, the phenomenon of liquid flow caused by the absorption of droplets will be made 37 201142982. Compared to the curvature of the concave surface at other locations along the outer surface of the liquid-carrying layer, the curvature of the concave surface is reduced due to the lower section of the clamping layer. The capillary flow will be guided. To allow the outer surface to retreat toward the position shown in Figure 16A. Due to the above damping effect, the temporary local deformation phenomenon of the substrate 12 as discussed with reference to Fig. 16A will be limited. The experimental results have shown that the height between the height level of the step limiting portion 83 and the intermediate portion of the main holding surface coincides with the nominal height of the substrate supporting structure 17. In other words, it is preferable that the height of the substrate supporting structure 17 and the depth of the restricting portion 83 are equal. The restriction portion 83 can be used to temporarily hold the clamping liquid for any of the embodiments of the substrate support structure. Serpentine Trench Figure A is a top view of a substrate support structure in accordance with another embodiment of the present invention. In this embodiment, several features discussed with reference to the previous embodiments are combined. Figure 17B is a cross-sectional view of a portion of the substrate support structure of Figure 17A, and Figure 17C is a cross-sectional view of a portion of the substrate support structure showing possible height variations for different structural elements ^ in Figure 17A In an embodiment, the surface 16 has a groove 55 formed between the upper portions 52. The trench is guided from the sacrificial gap at the periphery toward the center, and then is guided outward from the center toward the periphery of the substrate supporting structure. In this embodiment, the grooves are serpentine. As the gripping liquid is evaporated from the periphery of the outside, as previously described, the liquid is drawn from the grooves. The emptying action of the grooves begins at the sacrificial gap in the direction along the length of the groove toward the center, and then toward the periphery 3838642982. Since the evaporation at the outer surface of the sandwiched liquid layer is to draw liquid from the groove, the result is that the outermost edge of the groove near the periphery is finally emptied. By maintaining the entire liquid for a long time, the outermost portion of the groove can replenish the liquid required to hold the most important portion of the liquid layer at the periphery for a long time, and therefore, the step holder The service life. The flow resistance in the liquid layer is in accordance with the distance of the liquid flow, and at the same time, the capillary force for overcoming the above flow resistance is still not uniform. The serpentine groove pattern similar to that shown in Figure 将会 will reduce the distance traveled by the capillary flow for 'liquids' when substantially evaporation has occurred and the groove has been partially emptied. Replenish to the outer surface of the clamping liquid layer. Even after the upper evaporation has occurred, the outer side of the groove still has a source of liquid required for capillary flow near the outer surface of the liquid layer. The groove close to the outer surface of the clamping layer avoids the wide "parts" of the liquid that must be poured into the clamping layer: for the purpose of replenishing the liquid to the outside of the area due to the shorter flow distance Surface, this design is less sensitive to the negative side of the flow resistance. 2: For the design of Figure 17A - part of the three-dimensional section ... surrounding sealing structure 21, with buffering; == = two parts... the edge groove 19, the peripheral edge 41 or the first layer on which the liquid layer is sandwiched and the surface 4 is formed thereon (the higher ha has the partition 39 201142982, the compartment 65 with the raised structure 63, surrounds A first portion 52b of the groove 55, and a substrate support member 17 for supporting the substrate. Fig. 17C shows a configuration having a change in height level for different elements. This design includes at least five height levels hi To h5. The bottom height h 1 of the edge groove|9 is a second height level which does not have any practical influence on the operation of the clamping action. The lowest height of the substrate supporting structure is the height level h2 of the limiting portion 83, for example, Coagulation In the example, the restricting portion 83 is for buffering the temporary holding liquid. In this embodiment, the south level h3 is the lower height level of the remaining surface portion 5 1, including the groove 55 and the compartment 65. In this embodiment, the height level h4 is the peripheral edge, the height level of 21 is flat along with the height j around the upper portion μ of the groove 55, and the raised structure 63 is used to form the cavity. And the similar portion as explained earlier is separated by $ 65. The height level h5 in the last specific embodiment is consistent with the level of the substrate supporting member 17 and the sealing structure 21. The liquid storage tank liquid storage tank is also It can be provided to evaporate into the area along the holding liquid to reduce the amount of evaporation from the cooling layer. The substrate support structure 13 not shown in Fig. 18A further comprises a liquid storage tank 40. Liquid storage The trough 40 is configured to hold a liquid of a particular volume (e.g., water) for storing the vapor of the liquid. Further, when the capillary grip I 11 is present, the liquid storage tank is configured to provide a vapor. Capillary The shaking 'is, for example, via one or more grooves 43. The storage tank can be physically misplaced in the tank 4G. The storage tank liquid in the storage tank is used in the storage tank liquid and clamping the clamping layer at 201142982 The liquid in 11 is the same. The suitable liquid for liquid is water. 屮: 7. Another source of liquid for generating vapor, liquid storage tank 2: provided to further reduce the liquid from the clamping layer 11. It is preferred that the free surface area of the liquid evaporating as a reservoir is larger than the free surface area of the surface 18 of the sandwich layer U. As shown, the storage tank is formed below the surface 16 of the substrate support structure. The extension of the storage space of the $. The extension of the storage tank: for example, in the form of an annular cavity, the annular cavity has it; :: the inner edge required to extend over a small distance below the surface 16. In addition, the storage tank may also be incapable of extending below the surface, for example, being limited to the edge groove 19 shown in some other embodiments. The amount of vapor in the space adjacent to the outer surface 18 is provided by each liquid source. The above amount of vapor is determined by the relative size of the surface region depending on the liquid in the space. The larger free surface area of the liquid stored in the reservoir ensures that a sufficient amount of vapor is obtained to wet the environment of the surface 18, resulting in reduced evaporation from the grip layer 11. The liquid can completely fill the reservoir or fill the reservoir partially, leaving a vapor chamber as above the liquid shown in Figures 18A and 18B. Vapor can be transported from the liquid storage tank 40 toward the external liquid surface of the grip layer 11 by the action of one or more gas inlets 43. In such an application, the gas used in the gas distribution system is supplied to the substrate support structure via valve 45, which is also used to supply liquid to liquid storage tank 40. 41 201142982, externally, the gas may be provided via one or more separate gas connection units. If such a gas connection unit is configured to provide gas flow via one or more of the plurality of grooves 43, The above grooves 43 are used to provide vapor to the capillary layer 'one or more of the grooves α may have a machine = 44, the flow control unit 44 being configured to be able to be connected via the gas connection unit The gas stream is separated from the vapor from the storage tank 4〇. In another embodiment, the entire gas distribution system is separated from one or more components for holding the holder from the vapor storage tank 4 . When the temperature is high (for example, 3 G Celsius), the storage tank causes a problem of condensation. # By adjusting the heating condition of the substrate branch structure, the above condensation problem can be alleviated. The storage tank also requires additional preparation steps (e.g., to ensure that the storage tank is filled) and the volume is increased to the substrate support structure. However, the 'storage tank can be used for applications where the required service life of the holder is particularly long (for example, a seal structure or a combination of a cantilever beam seal and a storage tank is required) or is used to make it difficult to form an effective seal. The application of the device (for example, in the state in which the bottom surface of the substrate is too rough to allow a suitable seal to be obtained to ensure that the holder has a sufficient service life, and a higher vapor leakage rate can be tolerated The storage tank can also be used (for example, the storage tank can be used to replace the sealing structure) or operated at a lower temperature (for example, at 2 degrees Celsius, the condensation problem will be minimal).

從以上描述内容中可以清接！A 月楚仔知，藉由使用基板支撐 結構表面之高度差來導引得到毛細管流’具有用於握持住 42 201142982 f板之夾持層的毛細管流可以被施行用於其他目 是蒸發作用控制、將蒸氣密封件維持抵住密封邊緣，以及° 凝結作用控制。應瞭解的是本發明並不限於是以上这 的:但是亦可以被用來提供用於與液體央持層之穩定： 可#度相關其他事項的解決方案。 ， 是係參考，，夾持層，，之表達方式。應瞭解的 =夾持層之表達方式代表著具有内凹液面形狀之液體薄 曰’其中内凹液面形狀具有低於其周圍壓力之屋力值β 藉^考以上所討論之特定實施例’本發明已被描 二侍瞭解：是在不偏離本發明的精神和範疇之狀況 以上坆些實施例是容易得到熟習該項技術 ::修改内容和變更樣式。於是，雖然特定的實二： 以上攻些特定實施例僅為應用實例，且無意將在隨 〇凊專利_巾所界定之本發明料Μ限制住。 【圖式簡單說明】 —參考在圖形中所示之實施例，本發明的不同觀點將進 一步被說明，圖形中： 圖1為概略說明介於二大致上平坦結構中間之夾持層 的剖面視圖； 圖2Α為適合用於藉由夾持層來將基板夾持住之基板 撑結構的剖面視圖； 圖2β為圖2Α之基板支撐結構的上視圖； 圖3為概略說明沿著夾持層外部表面之蒸發加工程序 43 201142982 的剖面視圖； 圖4A和圖4B為包括密封結構之基板支撐結構的剖面 視圖； 圖5概略說明基板剝離的觀念； 圖6概略說明蒸氣朝向外部環境散發出去的觀念； 圖7A和圖7B概略說明相較於圖6，基板支撐元件之 另外一種安置方式的作用； 圖8A和圖8B概略說明不同的毛細管位能； 圖9為包括周圍邊緣之基板支撐結構的剖面視圖； 圖10A到圖1 〇c為圖9之基板支撐結構的上視圖，其 令進一步概略說明重新失持作用的觀念。 圖1 1A為具有不同毛細管位能區域之基板支撐結構的 上視圖； 圖11B為具有夾持層之圖nA所示基板支撐結構的上 視圆； 圖12為具有螺旋溝槽之基板支撐結構的上視圖； 圖13 A、圖13 B概略說明空穴成形和/或渦旋真空的觀 念； 圖1 4概略說明空穴封入的觀念； 圖1 5為具有隔間之基板支撐結構的上視圖； 圖1 6A概略描述在使用液體夾持層之基板支撐結構的 凝結現象； 圖16B概略說明基板支撐結構包括具有凸起部位之緣 溝； 201142982 圖 圖 肉 …具有蛇形樣式溝槽之基板支 圖17B為圓15之基 铒旳上視圖， 板支撐、.，“冓中一部份的橫剖面視 圖17C為基板支撐結構中一部份的立體視圖； 圖18A為包括儲存槽之基板支#結構的剖面視圖；以 圖18B為包括儲存槽和周圍邊緣之基板支撐結 面視圖。 構的剖 【主要元件符號說明】 45Can be cleared from the above description! A month Chu knows that the capillary flow can be guided by using the height difference of the surface of the substrate support structure. The capillary flow with the clamping layer for holding the 42 201142982 f plate can be used for other purposes. Control, maintain the vapor seal against the sealing edge, and ° condensation control. It should be understood that the invention is not limited to the above: but can also be used to provide a solution for the stability of the liquid holding layer: other things that can be related to the degree. , is the reference, the clamping layer, the way of expression. It should be understood that the expression of the clamping layer represents a liquid thin crucible having a concave liquid surface shape in which the concave liquid surface shape has a house force value β lower than the surrounding pressure, by way of the specific embodiment discussed above. The present invention has been described in terms of the above-described embodiments in which the present invention is readily available to the present invention without departing from the spirit and scope of the invention. Thus, although specific two: the above specific embodiments are merely application examples, and are not intended to be limited by the invention described in the accompanying patents. BRIEF DESCRIPTION OF THE DRAWINGS - Various aspects of the present invention will be further described with reference to the embodiments shown in the drawings. FIG. 1 is a cross-sectional view schematically showing a sandwich layer interposed between two substantially flat structures. Figure 2 is a cross-sectional view of a substrate support structure suitable for holding a substrate by a clamping layer; Figure 2 is a top view of the substrate support structure of Figure 2; Figure 3 is a schematic illustration of the exterior of the substrate FIG. 4A and FIG. 4B are cross-sectional views of a substrate supporting structure including a sealing structure; FIG. 5 schematically illustrates the concept of substrate peeling; and FIG. 6 schematically illustrates the concept that vapor is emitted toward the external environment; Figures 7A and 7B schematically illustrate the effect of another arrangement of the substrate support members as compared to Figure 6; Figures 8A and 8B schematically illustrate different capillary potential energies; Figure 9 is a cross-sectional view of the substrate support structure including the peripheral edges. Fig. 10A to Fig. 1 〇c are top views of the substrate supporting structure of Fig. 9, which further clarify the concept of re-disengagement. Figure 1A is a top view of a substrate support structure having different capillary potential regions; Figure 11B is a top view circle of the substrate support structure shown in Figure nA with a clamping layer; Figure 12 is a substrate support structure having a spiral groove Figure 13A, Figure 13B schematically illustrates the concept of hole forming and/or vortex vacuum; Figure 144 schematically illustrates the concept of hole sealing; Figure 158 is a top view of the substrate support structure with compartments; Figure 1A is a schematic view showing the condensation phenomenon of the substrate supporting structure using the liquid clamping layer; Figure 16B is a schematic view showing the substrate supporting structure including the edge groove having the convex portion; 201142982 Fig. Meat ... substrate plate having a serpentine pattern groove 17B is a top view of the circle 15, a plate support, ", a cross-sectional view 17C of a portion of the crucible is a perspective view of a portion of the substrate support structure; FIG. 18A is a substrate support structure including a storage slot FIG. 18B is a view showing a supporting surface of a substrate including a storage tank and a peripheral edge.

Claims (1)

201142982 七、申請專利範圍： 1. 一種基板支撐結構（13)，用於藉由液體毛細管層（ 之作用將基板（12)夾持於一表面（16)上，該表面具有 一外部邊緣（28 )，且包含一個或更多個用於接收待夾持 之基板的基板支撐元件（17)， 其中，所述一個或更多個基板支撐元件被配置用以在 數支撐位置處提供支撐作用予基板， 其中該基板支撐結構進一步包含與表面外切以及具有 形成密封邊緣之頂部表面或邊緣（22、24、26 )的密封結 構（21 )，以及 其中介於表面之外部邊緣與最外側支撐位置之間的距 離（c )疋大於&quot;於外部邊緣與密封邊緣之間的距離（d )。 2.如申請專利範圍第丨項之基板支撐結構’其中介於密 封邊緣與最外側支撐位置之間的距離（c + d)是大於介於相 鄰接支撐位置之間的最大距離。 3·如申請專利範圍第1項之基板支撐結構，其中介於表 面之外部邊緣與最外側支撐位置之間的距離（c)是大於或 等於介於外部邊緣與密封邊緣之間之距離（d)的二倍。 4.如申請專利範圍第2項之基板支撐結構，其中介於表 ★卜。卩邊緣與最外側支撐位置之間的距離（c )是大於或 ★;;丨於外部邊緣與密封邊緣之間之距離（d )的二倍。 ^ 5.如申請專利範圍中任一項之基板支撐結構，其中介於 在封邊緣與最外側支擇位置之間的距離（c + d)是大於或等 &quot;丨於相鄰接支撐位置之間之最大距離的二倍。 46 201142982 6·如申請專利範圍第1項到第4項中任一項之基板支撐 結構’其中介於表面之外部邊緣最外側支撐位置之間的距 離（）疋大於或荨於介於相鄰接支樓位置之間之最大距離 的二倍。 7. 如申請專利範圍第丨項到第4項中任一項之基板支撐 結構’其中介於表面之外部邊緣最外側支標位置中間的距 離（〇是等於或大於介於支撐位置之間的一標稱距離，以 及其中介於外部邊緣與密封邊緣之間的距離（d )是等於或 小於該標稱距離。 8. 如申請專利範圍第1項到第4項中任一項之基板支撐 結構，其中K更多個基板支樓元件係在複數的支樓位 置處提ί、支撐作用予基板，該支樓位置則是配置成以具有 相互節距的規則圖f，且介於密封邊緣與最接近該密封邊 緣之支撐位置之間的距離是超過該節距。 9. 如申吻專利範圍第1項到第4項中任一項之基板支撐 結構，其+該密封邊緣A致上是與基板支撐元件之頂部同 面。 10. 如申請專利範圍帛i項到第4項中任一項之基板支 撐結構，纟中表面（16)進—步包含具有不同毛細管位能 之4位（41、5 1、52、83 )，用以於夾持期間，在液體夹 持層内導引出預設的毛細管流。 11·如申凊專利範圍第1〇項之基板支撐結構，其中具有 不同毛細管位能之部位的至少—部份是設在基板支樓結構 之接收表面的周圍處。 47 201142982 12·如申請專利範圍第10項或第11項之基板支撐結 構’其中於液體夾持層内之預設毛細管流是在朝向液體夾 持層之周圍的方向上β 13. 如申請專利範圍第1項或第4項之基板支撐結構， 其中一緣溝（19 )被提供於接收表面（丨6 )的周圍，該緣 溝包含位於表面之周圍處的較高段差部位（83 )。 14. 如申請專利範圍第13項之基板支撐結構，其中介於 基板支樓元件之頂部表面與緣溝（19)之段差部位（83)之 間的高度差是大於或等於基板支撐元件之高度的二倍。 1 5.如申請專利範圍第1項或第4項之基板支撐結構， 其中表面具有用於形成複數個隔間（65 )之凸起結構（63 )。 16. 如申請專利範圍第15項之基板支撐結構，其中凸起 結構之南度是小於基板支撑元件之高度。 17. 如申請專利範圍第丨項或第4項之基板支撐結構， 其進一步包含用於將在該表面周圍處之液體移除的液體清 除系統。 18. 如申請專利範圍第17項之基板支撐結構，其中液體 清除系統包含氣體分配系統。 19. 一種藉由液體毛細管層（η)之作用將基板（12) 夾持於表面（16)上的基板支撐結構（13)，該表面具有 外部邊緣（2 8 )，且包含一個或更多個用於將待夾持之基 板接收的基板支撑元件（17)， 其中一個或更多個基板支撐元件被配置用以在複數的 支撐位置處提供支撐作用予基板， 48 201142982 其中忒基板支撐結構進一步包含與表面外切及具有形 成街封邊緣之頂部表面或邊緣（22、24、26 )的密封結構 (2 1 )，以及 其中介於表面之外部邊緣最外側支撐位置之間的距離 (c )是等於或大於介於支撐位置之間的標稱距離，以及其 中介於外部邊緣與密封邊緣之間的距離（d )是等於或小於 該標稱距離。 20.如申請專利範圍第19項之基板支撐結構，其中一個 或更多個基板支撐元件在複數的支撐位置處提供支撐作用 予基板，該支撐位置係配置成具有相互節距之規則圖案， 且介於密封邊緣與最接近該密封邊緣之支撐位置之間的距 離是超過該節距。 2 1.如申請專利範圍第丨9項或第2〇項之基板支撐結 構，其十該密封邊緣大致上是與基板支撐元件之頂部同高。 22. 如申請專利範圍第19項或第2〇項之基板支撐結 構’其中該表面進一步包含具有不同毛細管位能之部位， 用以於夾持期間，在液體夾持層内導引出預設的毛細管流。 23. —種板支撐結構（1 3 )和被夾持於基板支撐結構表 面（16)上之基板的組合，該基板是藉由液體毛細管層（u) 之作用而被夾持於基板支撐結構表面上，該表面包含一個 或更多個基板支撐元件（17 )，用以接收基板和被配置用 來在一個或更多個支撐位置處提供支撐作用予基板， 其中基板支撐結構進一步包含沿著表面周圍以及具有 形成密封邊緣之頂部表面或邊緣（22、24、26 )之密封結 49 201142982 構（21 )，以及 其中；1於密封邊緣與最外側支撐位置之間的距離 (c d)疋足夠大使得在基板之夾持期間基板能夠往下 彎曲，用17、、4、， 減小或消除介於密封邊緣與基板之底部表面之 間的間隙。 24.如申請專利範圍第23項之組合其中在基板夾持期 巧隙被減小，使得基板之底部表面能夠碰觸到密封邊 緣。 25·如申請專利範圍第23項或第24項之組合，其中密 封邊緣大致上是與基板支撐元件之頂部同高。 26. 如申請專利範圍第23項或第24項之組合，其中介 ^密封邊緣與最外側支撐位置之間的距離（c + d )是大於或 等於介於相鄰接支撐位置中間之最大距離的二倍。 27. 如申請專利範圍第23項或第24項之組合其中介 於毛細管液體層周圍與最外側支撐位置之間的距離（a)是 大於介於毛細管液體層周圍與密封邊緣之間的距離（15)。 28. 如申請專利範圍第23項或第24項之組合，其中該 表面（16)進一步包含具有不同毛細管位能之部位（41、 51、52、83)，用以於夾持期間，在液體夾持層内導引出 預设的毛細管流。 29. 如申請專利範圍第28項之組合，其中於液體爽持層 内之預設毛細管流是在朝向液體夾持層之周圍的方向上。 八、圖式： (如次頁） 50201142982 VII. Patent application scope: 1. A substrate supporting structure (13) for clamping a substrate (12) on a surface (16) by a liquid capillary layer, the surface having an outer edge (28) And comprising one or more substrate support elements (17) for receiving a substrate to be clamped, wherein the one or more substrate support elements are configured to provide support at a plurality of support locations a substrate, wherein the substrate support structure further comprises a sealing structure (21) circumscribed to the surface and having a top surface or edge (22, 24, 26) forming a sealing edge, and wherein the outer edge and the outermost support position are between the surface The distance between (c) 疋 is greater than &quot; the distance between the outer edge and the sealing edge (d). 2. The substrate support structure of the scope of the patent application 'where the sealing edge and the outermost support position The distance between (c + d) is greater than the maximum distance between adjacent support positions. 3. The substrate support structure of claim 1 wherein the surface is The distance (c) between the edge of the portion and the outermost support position is greater than or equal to twice the distance (d) between the outer edge and the sealing edge. 4. The substrate support structure of claim 2, Wherein the distance between the edge of the crucible and the outermost support position (c) is greater than or ±;; 丨 twice the distance between the outer edge and the sealing edge (d). ^ 5. Apply A substrate support structure according to any one of the preceding claims, wherein the distance (c + d) between the edge of the seal and the outermost support position is greater than or equal to the maximum distance between adjacent support positions </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> The maximum distance between the positions of the adjacent joints. 7. The substrate support structure of any one of the claims to the fourth item, wherein the outermost edge of the outer edge of the surface is The distance in the middle of the position (〇 is equal to Greater than a nominal distance between the support locations, and wherein the distance (d) between the outer edge and the sealing edge is equal to or less than the nominal distance. 8. As in claim 1 to 4 The substrate supporting structure according to any one of the preceding claims, wherein the K plurality of substrate branch building elements are lifted and supported at a plurality of branch positions, and the position of the branch is configured to have a mutual pitch rule. Figure f, and the distance between the sealing edge and the supporting position closest to the sealing edge is greater than the pitch. 9. The substrate supporting structure according to any one of items 1 to 4 of the patent application, The + sealing edge A is in the same plane as the top of the substrate support member. 10. In the substrate support structure of any one of the claims 帛i to 4, the middle surface (16) further comprises 4 positions (41, 5 1, 52, 83) having different capillary potentials. For guiding the preset capillary flow in the liquid clamping layer during clamping. 11. The substrate support structure of claim 1, wherein at least a portion of the portion having different capillary potential energy is disposed around the receiving surface of the substrate support structure. 47 201142982 12. The substrate support structure of claim 10 or 11 wherein the predetermined capillary flow in the liquid clamping layer is in a direction toward the periphery of the liquid clamping layer. The substrate support structure of item 1 or 4, wherein a margin groove (19) is provided around the receiving surface (丨6), the edge groove including a higher step portion (83) located around the surface. 14. The substrate support structure of claim 13, wherein a height difference between a top surface of the substrate branch member and a step portion (83) of the edge groove (19) is greater than or equal to a height of the substrate support member Doubled. 1 5. The substrate support structure of claim 1 or 4, wherein the surface has a raised structure (63) for forming a plurality of compartments (65). 16. The substrate support structure of claim 15 wherein the south of the raised structure is less than the height of the substrate support member. 17. The substrate support structure of claim 4 or 4, further comprising a liquid removal system for removing liquid at the periphery of the surface. 18. The substrate support structure of claim 17, wherein the liquid removal system comprises a gas distribution system. 19. A substrate support structure (13) for holding a substrate (12) on a surface (16) by the action of a liquid capillary layer (n) having an outer edge (28) and comprising one or more a substrate support member (17) for receiving a substrate to be clamped, wherein the one or more substrate support members are configured to provide support to the substrate at a plurality of support locations, 48 201142982 wherein the substrate support structure Further comprising a sealing structure (2 1 ) circumscribed to the surface and having a top surface or edge (22, 24, 26) forming a street edge, and a distance between the outermost support positions of the outer edge of the surface (c Is a nominal distance equal to or greater than between the support locations, and wherein the distance (d) between the outer edge and the sealing edge is equal to or less than the nominal distance. 20. The substrate support structure of claim 19, wherein the one or more substrate support members provide support to the substrate at a plurality of support locations, the support locations being configured to have a regular pattern of mutual pitch, and The distance between the sealing edge and the support location closest to the sealing edge is beyond the pitch. 2 1. The substrate support structure of claim 9 or 2, wherein the sealing edge is substantially the same height as the top of the substrate supporting member. 22. The substrate support structure of claim 19 or 2, wherein the surface further comprises a portion having a different capillary potential energy for guiding the preset in the liquid clamping layer during clamping Capillary flow. 23. A combination of a seed board support structure (13) and a substrate held on a surface (16) of the substrate support structure, the substrate being held by the substrate support structure by the action of the liquid capillary layer (u) In surface, the surface includes one or more substrate support members (17) for receiving the substrate and configured to provide support to the substrate at one or more support locations, wherein the substrate support structure further comprises along a sealing junction 49 201142982 (21 ) around the surface and having a top surface or edge (22, 24, 26) forming a sealing edge, and wherein: 1 the distance (cd) between the sealing edge and the outermost supporting position is sufficient The substrate can be bent downward during the clamping of the substrate, and the gap between the sealing edge and the bottom surface of the substrate can be reduced or eliminated by 17, 4, 4. 24. The combination of claim 23 wherein the clump is reduced during substrate clamping so that the bottom surface of the substrate can contact the sealing edge. 25. A combination of claim 23 or 24 wherein the sealing edge is substantially the same height as the top of the substrate support member. 26. For the combination of claim 23 or 24, wherein the distance between the sealing edge and the outermost support position (c + d ) is greater than or equal to the maximum distance between adjacent support positions Doubled. 27. The combination of claim 23 or 24 wherein the distance between the capillary liquid layer and the outermost support position (a) is greater than the distance between the capillary liquid layer and the sealing edge ( 15). 28. The combination of claim 23 or claim 24, wherein the surface (16) further comprises a portion (41, 51, 52, 83) having a different capillary potential for use in the liquid during clamping A predetermined capillary flow is guided within the clamping layer. 29. The combination of claim 28, wherein the predetermined capillary flow in the liquid cooling layer is in a direction toward the periphery of the liquid holding layer. Eight, the pattern: (such as the next page) 50
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