CN112146359B - Drying device, drying method, cleaning and drying system and cleaning and drying method - Google Patents
Drying device, drying method, cleaning and drying system and cleaning and drying method Download PDFInfo
- Publication number
- CN112146359B CN112146359B CN202011024121.1A CN202011024121A CN112146359B CN 112146359 B CN112146359 B CN 112146359B CN 202011024121 A CN202011024121 A CN 202011024121A CN 112146359 B CN112146359 B CN 112146359B
- Authority
- CN
- China
- Prior art keywords
- wafer
- drying
- cleaning
- gas
- chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F26—DRYING
- F26B—DRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
- F26B5/00—Drying solid materials or objects by processes not involving the application of heat
- F26B5/04—Drying solid materials or objects by processes not involving the application of heat by evaporation or sublimation of moisture under reduced pressure, e.g. in a vacuum
- F26B5/041—Drying solid materials or objects by processes not involving the application of heat by evaporation or sublimation of moisture under reduced pressure, e.g. in a vacuum for drying flowable materials, e.g. suspensions, bulk goods, in a continuous operation, e.g. with locks or other air tight arrangements for charging/discharging
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F26—DRYING
- F26B—DRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
- F26B21/00—Arrangements or duct systems, e.g. in combination with pallet boxes, for supplying and controlling air or gases for drying solid materials or objects
- F26B21/14—Arrangements or duct systems, e.g. in combination with pallet boxes, for supplying and controlling air or gases for drying solid materials or objects using gases or vapours other than air or steam, e.g. inert gases
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F26—DRYING
- F26B—DRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
- F26B23/00—Heating arrangements
- F26B23/04—Heating arrangements using electric heating
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F26—DRYING
- F26B—DRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
- F26B25/00—Details of general application not covered by group F26B21/00 or F26B23/00
- F26B25/008—Seals, locks, e.g. gas barriers or air curtains, for drying enclosures
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F26—DRYING
- F26B—DRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
- F26B25/00—Details of general application not covered by group F26B21/00 or F26B23/00
- F26B25/06—Chambers, containers, or receptacles
- F26B25/14—Chambers, containers, receptacles of simple construction
- F26B25/18—Chambers, containers, receptacles of simple construction mainly open, e.g. dish, tray, pan, rack
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F26—DRYING
- F26B—DRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
- F26B9/00—Machines or apparatus for drying solid materials or objects at rest or with only local agitation; Domestic airing cupboards
- F26B9/06—Machines or apparatus for drying solid materials or objects at rest or with only local agitation; Domestic airing cupboards in stationary drums or chambers
Abstract
The application discloses a drying device, a drying method, a cleaning and drying system and a cleaning and drying method. The drying device is used for drying the wafer with the deep hole formed by etching, and comprises: the cavity is arranged in an etching cavity for etching the wafer; a rotary suction cup which is placed in the chamber upside down with the adsorption surface facing downward and is arranged to be able to rotate around the rotating shaft; the power supply is connected to the rotary sucker and supplies power to the rotary sucker; and the base is arranged on the adsorption surface of the rotary sucker in a manner of rotating together with the rotary sucker and is used for fixing the wafer. The drying device directly utilizes the inverted rotary sucker in the etching cavity of the wafer to enable the water in the deep hole of the wafer to be separated under the dual actions of gravity and centrifugal force, and the efficiency and reliability of drying the wafer are improved.
Description
Technical Field
The present invention relates to the field of semiconductor manufacturing technologies, and more particularly, to a wafer drying apparatus, a wafer drying method, a wafer cleaning and drying system, and a wafer cleaning and drying method.
Background
In semiconductor processing, wafers are typically cleaned and dried to meet the cleanliness requirements of the wafer surface. Therefore, wafer cleaning techniques are one of the important factors affecting the yield, device quality and reliability of semiconductor devices. The purpose of wafer cleaning is to remove contaminants such as particles, organic substances, metals and oxides attached to the surface of the wafer, so as to prevent the contaminants from adversely affecting the subsequent processes.
In the existing semiconductor process, the wet cleaning process for the wafer mainly comprises two types, namely groove type batch cleaning and chamber single-wafer rotary cleaning. In the Batch tank cleaning, wafers are immersed in a cleaning tank in batches (Batch Run) for cleaning. In the chamber single-wafer spin cleaning, a cleaning solution is added to a single wafer while the single wafer is being spun for cleaning. And after the two wet cleaning processes are finished, natural airing is carried out.
The increase in memory density of memory devices is closely related to the progress of semiconductor manufacturing processes. As the feature size (CD) of a semiconductor manufacturing process is reduced, the storage density of a memory device is higher and the aspect ratio is increased. In order to further increase the memory density, a memory device (3D memory device) of a three-dimensional structure has been developed. The 3D memory device includes a plurality of memory cells stacked in a vertical direction, can increase integration in multiples on a unit area of a wafer, and can reduce costs.
For a memory device with a 3D NAND structure, after a gate stack structure is formed, an opening penetrating the gate stack structure is formed, and then epitaxial layers of a channel pillar, i.e., various functional layers, are formed to form a plurality of memory cells. However, in the 3D NAND process, with the improvement of the etching process capability, deep Hole features such as Channel Holes (Channel Holes, Dummy Channel Holes) and contact Holes (Contacts), and deep groove features such as ultra-deep gate line grooves (gate slots) and bit lines (Bitline) are formed by dry etching. These deep holes (trenches) each have a high Aspect Ratio (AR), for example, AR > 20. Cleaning of deep holes (trenches) with high aspect ratios is required after dry etching. Because the characteristic dimension of the lower layer is usually smaller than that of the upper layer, a bottleneck can be formed at the junction of the lamination layers, and therefore, the deep hole (deep groove) is difficult to clean by adopting the traditional wet process mode, residues can be generated, the subsequent process is seriously influenced, and the device can be caused to fail. In addition, the deep hole (deep groove) is difficult to dry in a natural drying manner, so that an extremely long process period is required, and moisture residue may occur, thereby affecting the subsequent process and the final device performance.
Disclosure of Invention
In view of the above problems, an object of the present invention is to provide a drying apparatus, a drying method, a cleaning and drying system, and a cleaning and drying method, which can efficiently clean and dry a deep hole having a high aspect ratio in a wafer.
According to an aspect of the present invention, there is provided a drying apparatus for drying a wafer having a deep hole formed by etching, including: the cavity is arranged in an etching cavity for etching the wafer; a rotary suction cup which is placed upside down in the chamber with a suction surface facing downward and is provided to be rotatable around a rotary shaft; a power supply connected to the rotating chuck to supply power to the rotating chuck; and the base is arranged on the adsorption surface of the rotary sucker in a manner of rotating together with the rotary sucker and is used for fixing the wafer.
Preferably, in the drying apparatus, the pedestal fixes the wafer in an electrostatic adsorption manner.
Preferably, in the drying apparatus, the chamber has a gas inlet and a gas outlet, and the drying apparatus further includes a vacuum pump connected to the gas outlet of the chamber, the drying gas is introduced into the chamber from the gas inlet, and the drying gas is discharged to the outside through the gas outlet by the vacuum pump.
Preferably, in the drying apparatus, the drying gas is N2Gas, IPA gas, CO2Any one or more of gases.
Preferably, in the drying apparatus, a heater for heating the inside of the chamber is further included.
Preferably, in the drying device, the heater is provided inside the rotary sucker.
Preferably, in the drying apparatus, the heater is provided spaced apart from the rotary suction cup.
According to a second aspect of the present invention, there is provided a drying method for drying a wafer having a deep hole formed by etching, the drying method comprising the steps of: fixing the wafer to a base, wherein the base is arranged on an adsorption surface of a rotary sucker in a manner of rotating together with the rotary sucker, the rotary sucker is inversely arranged in a cavity in a manner that the adsorption surface faces downwards and is arranged to rotate around a rotating shaft, and the cavity is arranged in an etching cavity for etching the wafer; and switching on a power supply, enabling the rotary sucker to rotate around the rotating shaft, and separating the water in the deep hole of the wafer by utilizing gravity and centrifugal force.
Preferably, in the drying method, the wafer is fixed to the pedestal in an electrostatic adsorption manner.
Preferably, the drying method further includes a step of introducing a drying gas into the chamber through a gas inlet of the chamber, and discharging the drying gas to the outside through a gas outlet of the chamber by a vacuum pump.
Preferably, in the drying method, the drying gas is N2Gas, IPA gas, CO2Any one or more of gases.
Preferably, in the drying method, the method further includes a step of heating the inside of the chamber by a heater to accelerate evaporation of water in the deep hole of the wafer.
According to a third aspect of the present invention, there is provided a cleaning and drying system for cleaning and drying a wafer having a deep hole formed by etching, comprising: the cleaning device is arranged in an etching cavity for etching the wafer and is used for cleaning the wafer; and a drying apparatus as described above.
Preferably, in the cleaning and drying system, the cleaning device cleans the wafer by using a cleaning liquid.
According to a fourth aspect of the present invention, there is provided a cleaning and drying method for cleaning and drying a wafer having a deep hole formed by etching, comprising the steps of: a step of cleaning the wafer by using a cleaning liquid in a cleaning device arranged in an etching chamber for etching the wafer; cleaning the wafer for the second time by using deionized water in the cleaning device; and drying the wafer by using the drying method.
According to a fifth aspect of the present invention, there is provided a cleaning and drying system for cleaning and drying a wafer having a deep hole formed by etching, comprising: the chamber is arranged in an etching cavity for etching the wafer and is provided with an air inlet and an air outlet; a vacuum pump connected to the gas outlet of the chamber; a rotary suction cup which is placed upside down in the chamber with a suction surface facing downward and is provided to be rotatable around a rotary shaft; a power supply connected to the rotating chuck to supply power to the rotating chuck; and a base which is provided on an adsorption surface of the spin chuck so as to be rotatable together with the spin chuck, and which fixes the wafer, wherein in a cleaning mode, a cleaning gas is introduced into the chamber from the gas inlet, and the cleaning gas is discharged to the outside through the gas outlet by the vacuum pump, and in a drying mode, a drying gas is introduced into the chamber from the gas inlet, and the drying gas is discharged to the outside through the gas outlet by the vacuum pump.
Preferably, in the purge drying system, the purge gas is a gaseous purge of APM, SPM, HPM, DHF, BHF or deionized water.
Preferably, in the purge drying system, the drying gas is N2Gas, IPA gas, CO2Any one or more of gases.
Preferably, in the washing and drying system, a heater is further included for heating the inside of the chamber.
According to a sixth aspect of the present invention, there is provided a cleaning and drying method for cleaning and drying a wafer having a deep hole formed by etching, comprising the steps of: fixing the wafer to a base, wherein the base is arranged on an adsorption surface of a rotary sucker in a manner of rotating together with the rotary sucker, the rotary sucker is inversely arranged in a cavity in a manner that the adsorption surface faces downwards and is arranged to rotate around a rotating shaft, and the cavity is arranged in an etching cavity for etching the wafer; turning on a power supply to rotate the rotary sucker around a rotating shaft; introducing a cleaning gas into the chamber from a gas inlet of the chamber and discharging the cleaning gas to the outside through a gas outlet of the chamber by a vacuum pump during a cleaning process; and a step of introducing a dry gas into the chamber from a gas inlet of the chamber and discharging the dry gas to the outside through a gas outlet of the chamber by the vacuum pump during the drying process.
The drying device provided by the invention utilizes the inverted rotary sucker to enable the water in the deep hole of the wafer to be separated under the dual actions of gravity and centrifugal force, so that the efficiency and reliability of drying the wafer are improved, and the yield, the device quality and the reliability of the finally formed semiconductor device are improved.
In addition, the drying device is directly arranged in the etching cavity of the wafer to dry the wafer, so that the operation of taking the wafer out of the etching cavity during drying can be omitted, secondary pollution is avoided, the efficiency and the reliability of wafer drying are improved, and the yield, the device quality and the reliability of finally formed semiconductor devices are improved.
The cleaning and drying system and the cleaning and drying method of the invention utilize the cleaning device and the drying device which are directly arranged in the etching cavity of the wafer to clean and dry the wafer, thereby saving the operation of taking the wafer out of the etching cavity during cleaning and drying, avoiding secondary pollution, improving the efficiency and the reliability of cleaning and drying the wafer, and further improving the yield, the device quality and the reliability of the finally formed semiconductor device.
The other cleaning and drying system and the cleaning and drying method of the invention can switch the gas introduced into the chamber according to the cleaning mode and the drying mode, thereby realizing the integrated design of the cleaning device and the drying device. In addition, cleaning gas is introduced to clean the deep holes in the inverted wafer in the cleaning mode, the cleaning gas can easily reach pollutants at the bottoms of the deep holes, the pollutants can be easily removed from the bottoms of the deep holes under the action of gravity, centrifugal force, impact force of the cleaning gas and chemical action, the cleaning efficiency and reliability of the wafer are improved, and therefore the yield, the quality and the reliability of finally formed semiconductor devices are improved.
Drawings
Fig. 1 shows a cross-sectional view of a 3D memory device.
Fig. 2 shows a schematic view of a drying apparatus according to an embodiment of the present invention.
Fig. 3 is a schematic diagram illustrating the arrangement of a cleaning and drying system in an etching chamber according to an embodiment of the present invention.
Fig. 4 is a schematic view showing a cleaning and drying method according to an embodiment of the present invention.
Description of the reference symbols
10 semiconductor substrate
11 insulating laminated structure
111 interlayer insulating layer
112 sacrificial layer
12 channel hole
13 epitaxial layer
20 drying device 2
21 chamber
22 rotating suction cup
23 power supply
24 base
25 wafer
26 vacuum pump
27 heating device
30 transmission manipulator
Detailed Description
Hereinafter, embodiments for carrying out the present invention will be described in more detail with reference to the accompanying drawings.
It should be noted that in the following description, numerous specific details are set forth, such as structures, materials, dimensions, processing techniques and techniques of the devices in order to provide a thorough understanding of the present invention. The present invention may be embodied in other specific forms than those herein described and it should be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims.
In the present application, a wafer is a semiconductor structure including a semiconductor substrate and a semiconductor material formed on the surface of the semiconductor substrate through deposition, etching, and other steps. The wafer and the deep hole (deep trench) with high aspect ratio in the present application will be further described below by taking the wafer of the 3D memory device as an example.
A semiconductor structure formed during the fabrication of a 3D memory device is shown in fig. 1. The semiconductor structure includes a semiconductor substrate 10 and an insulating stacked structure 11 on a surface thereof, the insulating stacked structure 11 including a plurality of interlayer insulating layers 111 and a plurality of sacrificial layers 112 which are alternately stacked. In this embodiment, a deep hole having a high Aspect Ratio (AR: Aspect Ratio) is formed as the channel hole 12 in the insulating laminated structure 11 by dry etching. In some embodiments, an epitaxial layer 13 is also formed at the bottom of the channel hole 12.
After the semiconductor structure shown in fig. 1 is formed, functional layers are formed in the trench hole 12 to form a plurality of memory cells. The functional layer is, for example, a channel layer, a tunneling dielectric layer, a charge storage layer, a blocking dielectric layer, and the like. In a 3D memory device, the quality of each functional layer directly affects the performance of the device, for example, if each functional layer is contaminated or insufficiently dried by contaminants such as particles, organic substances, metals, and oxides (as shown in the dashed line box of fig. 1) during the manufacturing process, the read/write performance of the finally formed 3D memory device may be deteriorated, short-circuited, or even damaged.
Because each functional layer is formed in the deep hole with the high aspect ratio, the characteristic dimension of the lower layer is often smaller than that of the upper layer, and a bottleneck can be formed at the junction of the lamination layers, the pollutants in the deep hole are difficult to clean by adopting the traditional wet process mode, and the pollutants are difficult to be sufficiently dried by adopting the natural drying mode, so that the yield, the device quality and the reliability of the semiconductor device can be reduced.
Therefore, the inventor of the present application provides a wafer drying apparatus, a wafer drying method, a wafer cleaning and drying system, and a wafer cleaning and drying method, which can sufficiently clean and dry contaminants in deep holes with a high aspect ratio in a wafer, thereby improving yield, device quality, and reliability of semiconductor devices.
It should be understood that the drying device, the drying method, the cleaning system and the cleaning and drying device for the wafer provided by the present application are not limited to cleaning the wafer of the 3D memory device, and may be applied to various wafers involving deep hole cleaning in the process, and the present application is not limited to the specific structure and use of the wafer to be cleaned.
The following detailed description of specific embodiments of the present invention is provided in connection with the accompanying drawings and the embodiments.
Fig. 2 is a schematic view showing a wafer drying apparatus according to an embodiment of the present invention.
As shown in fig. 2, a wafer drying apparatus 20 according to an embodiment of the present invention is used for drying a wafer 25 having a deep hole formed by etching, and includes a chamber 21, a spin chuck 22, a power supply 23, and a base 24.
The chamber 21 is disposed in an etching chamber for etching the wafer 25, and provides a space for accommodating the dried wafer 25.
The rotary suction cup 22 is placed upside down in the chamber 21 with the suction surface facing downward, and is provided to be rotatable about the rotary shaft. The rotating suction cup 22 may be, for example, a cylindrical cavity.
A power supply 23 is connected to the rotary sucker 22 for supplying power to the rotary sucker 22.
The pedestal 24 is provided on the suction surface of the spin chuck 22 so as to be rotatable together with the spin chuck 22, and fixes the wafer 25. As an example, the pedestal 24 holds the wafer 25 by electrostatic attraction (E-Chuck). As another example, the base 24 may fix the wafer 25 by a fixing device such as a wafer chuck.
The drying apparatus 20 according to the present embodiment separates moisture in the deep hole of the wafer by the dual action of gravity and centrifugal force using the inverted spin chuck, thereby improving the efficiency and reliability of drying the wafer, and improving the yield, device quality, and reliability of the finally formed semiconductor device.
In addition, the drying device 20 is directly arranged in the etching cavity of the wafer to dry the wafer, so that the operation of taking the wafer out of the etching cavity during drying can be omitted, secondary pollution is avoided, the efficiency and reliability of wafer drying are improved, and the yield, the device quality and the reliability of finally formed semiconductor devices are improved.
In a preferred embodiment, the chamber 21 has a gas inlet for introducing the dry gas into the chamber 21 and a gas outlet for leading the dry gas out to the outside. Preferably, the gas inlet is provided in a bottom portion of the chamber at a position opposite to the wafer, and the gas outlet is provided in a top portion of the chamber at a position opposite to the gas inlet, whereby drying efficiency of the drying gas can be improved. The drying apparatus 20 further comprises a vacuum pump 26, and the vacuum pump 26 is connected to the gas outlet of the chamber 21 to provide motive power for the drying gas, specifically, to provide motive power for the drying gas to flow from the gas inlet to the gas outlet. In the present embodiment, the flow of the drying gas can take the moisture in the wafer out of the chamber 21, so as to avoid the wafer 25 from being stuck with moisture again or being secondarily contaminated due to the retention of the moisture in the chamber 21, and facilitate the evaporation of the moisture.
Wherein the drying gas may be N2Gas, IPA (isopropyl alcohol) gas, CO2Any one or more of gases.
In the utilization of N2Gas or CO2When the gas is used as drying gas, the water in the wafer is dried by centrifugal force caused by rotation, and dry N is used as auxiliary2Gas or CO2The blowing force of the gas can quickly blow and dry the moisture in the deep hole of the wafer, and the method is suitable for the wafer drying process of simple patterns.
When IPA gas is used as drying gas, due to the difference of surface tension of IPA and wafer, after the wafer is placed in the IPA steam environment, the IPA peels off the water on the surface of the wafer to replace the water to contact the surface of the wafer, the water is more easily dried when the subsequent wafer rotates, and the IPA is evaporated, so that the deep hole cleaning and drying quality is improved, and the method is suitable for the wafer drying process with complicated patterns and high depth-to-width ratio.
In addition, the drying device 20 may further include a heater 27 for heating the inside of the chamber 21 to accelerate the evaporation rate of the moisture in the wafer by using a temperature evaporation effect. The heater 27 may be provided in the rotary chuck 22 or may be provided separately from the rotary chuck 22.
In the embodiment of the present invention, an air inlet valve and an air outlet valve may be further disposed at the air inlet and the air outlet of the chamber 21, respectively, for evacuating the chamber 21 to further dry the wafer 25.
When drying the wafer 25 by the drying device 20, first, the wafer 25 is fixed to the pedestal 24 by, for example, electrostatic adsorption or by a fixing device such as a wafer chuck; then, the power is turned on to rotate the spin chuck 22 around the rotation axis, and the moisture in the deep hole of the wafer 25 is removed by gravity and centrifugal force.
In addition, as an alternative embodiment, while the rotary suction cup 22 is rotated around the rotary shaft, the drying gas is introduced into the chamber 21 through the gas inlet of the chamber 21, and the drying gas is introduced to the outside through the gas outlet of the chamber 21 by using the vacuum pump 26, so that the moisture is prevented from staying in the chamber 21, and the evaporation of the moisture is facilitated.
As an alternative embodiment, the inside of the chamber 21 is also heated by the heater 27, and the evaporation rate of the moisture in the deep hole of the wafer is further increased by the temperature evaporation effect.
As an alternative embodiment, after drying with the drying gas for a certain time, the inlet and outlet valves may be closed, and the vacuum pump 26 may be turned on to evacuate the chamber 21 for further drying the wafer 25. Further, another embodiment of the present invention provides a system for cleaning and drying a wafer, which includes a cleaning device and a drying device 20 as shown in fig. 2. The cleaning device is arranged in an etching cavity for etching the wafer and is used for cleaning the wafer. The cleaning device can adopt a groove type cleaning device with a soaking cleaning mode or a chamber single-chip rotary cleaning device with a spraying cleaning mode and the like.
According to the cleaning and drying system, the cleaning device and the drying device which are directly arranged in the etching cavity of the wafer are used for cleaning and drying the wafer, so that the operation of taking the wafer out of the etching cavity during cleaning and drying can be omitted, secondary pollution is avoided, the efficiency and the reliability of cleaning and drying the wafer are improved, and the yield, the device quality and the reliability of a finally formed semiconductor device are improved.
In order to better facilitate understanding of the technical solution of the present invention, the main manufacturing process before cleaning will be described in detail with reference to fig. 1.
First, a semiconductor substrate 10 is provided, as shown with reference to fig. 1. The semiconductor substrate 10 may be, for example, a Si substrate, a Ge substrate, a SiGe substrate, an SOI (Silicon On Insulator) or GOI (Germanium On Insulator) or the like. In other embodiments, the semiconductor substrate may also be a substrate including other element semiconductors or compound semiconductors, such as GaAs, InP, SiC, or the like, may also be a stacked structure, such as Si/SiGe, or the like, and may also be another epitaxial structure, such as SGOI (silicon germanium on insulator), or the like. Typically, the substrate is a bulk silicon substrate.
Next, an insulating laminated structure 11 is formed on the semiconductor substrate 10, the insulating laminated structure 11 being formed by alternately laminating a plurality of interlayer insulating layers 111 and a plurality of sacrificial layers 112, as shown with reference to fig. 2.
The number of layers of the insulating laminated structure 11 is determined according to the number of memory cells to be formed in the vertical direction, and may be, for example, 32 layers, 64 layers, 128 layers, or the like. The number of layers of the insulating laminated structure herein refers to the number of layers of the sacrificial layer therein, which will be replaced with a metal layer in a subsequent step. The interlayer insulating layer serves to space the metal layers apart. The metal layer is the control gate of the memory device, and the number of layers determines the number of memory cells in the vertical direction. Therefore, the greater the number of layers of the insulating laminated structure, the higher the integration level. In the illustration of the embodiment of the present invention, only a few layers are schematically illustrated, and in an actual device structure, the insulating stacked structure may have a larger number of layers.
The materials of the interlayer insulating layer and the sacrificial layer may be determined according to the etching selectivity in the subsequent process. Typically, the interlayer insulating layer is silicon oxide (SiO)2) The sacrificial layer is a silicon nitride layer. The insulating stack 11 may be formed by alternately depositing silicon nitride and silicon oxide in sequence by chemical vapor deposition, atomic layer deposition, or other suitable deposition methods. Then, by an etching process, the edge of the insulating stacked structure 11 is made to be a step structure, the step structure is used for subsequently forming a contact on the control gate, and the central region of the insulating stacked structure 11 is used for forming a channel hole and a storage region in the channel hole.
Thereafter, a trench hole 12 having a high aspect ratio is formed in the insulating stacked structure 11.
The channel hole 12 is a through hole penetrating the insulating laminated structure 11, and the insulating laminated structure may be etched by a dry etching technique, such as RIE (reactive ion etching), until the surface of the semiconductor substrate is exposed, or a portion of the semiconductor substrate is over-etched, thereby forming the channel hole 12. The depth of the trench hole 12 is determined by the thickness of the insulating laminated structure 11, and the depth of the trench hole formed is about 3um and about 3um for a 32-layer insulating laminated structure. In some embodiments, after forming the channel hole 12, the Epitaxial layer 13 is grown in situ at the bottom of the channel hole 12 by Selective Epitaxial Growth (Selective Epitaxial Growth). The epitaxial layer 13 functions to connect the memory regions in the channel holes and to support the stack layer when the silicon nitride layer is removed.
Finally, the functional layers are formed in the channel holes.
The cleaning device can clean the deep hole in the wafer in the etching chamber after forming the deep hole as the channel hole by dry etching. In the cleaning, the cleaning device performs cleaning using a cleaning liquid. The cleaning solution can be selected to be suitable for cleaning according to the structure formed on the semiconductor substrate, the process before cleaning and the type of the pollutants to be cleaned.
In particular, in the case where the contaminants are particles such as polymers, photoresist and etching impurities, which affect etching and film growth, APM (Ammonium hydroxide/hydrogen peroxide/DI water mixture) may be used. APM is commonly referred to as SC1 cleaning solution, utilizing NH4OH、H2O2、H2O, to remove surface particles by oxidation and microetching.
In the case where the contaminants are organic substances such as adhesion contaminants, photoresist, and solvent, which affect the patterning and film growth, APM or SPM (sulfuric acid/hydrogen peroxide/DI water mixture) as described above may be used. SPM, commonly referred to as SC3 cleaning solution, utilizes H2SO4、H2O2、H2And O, removing organic pollutants.
In the case where the contaminant is metal atoms and ions such as etching and chemical mechanical polishing residues, which may cause short circuits or poor reliability, the aforementioned SPM or HPM (Hydrochloric Acid/hydrogen peroxide/DI water mixture) or DHF (Diluted Hydrofluoric Acid) may be used. HPM is commonly referred to as SC2 cleaning solution, using HCl, H2O2、H2And removing the metal pollutants by using the mixed solution of O. DHF utilizes dilute aqueous hydrofluoric acid (HF) to remove contaminants.
In the case where the contaminant is a native oxide, a chemical oxide, DHF or BHF (Buffered Hydrofluoric Acid) as described above can be used. BHF is prepared by using hydrofluoric acid (HF) and ammonium fluoride (NH)4F) The mixed solution of (a) to remove contaminants.
In another embodiment of the present invention, the drying apparatus 20 shown in fig. 2 may be used as a cleaning apparatus to form a cleaning and drying system.
Specifically, in the cleaning mode, a cleaning gas is introduced into the chamber 21 from the gas inlet of the chamber 21, and the cleaning gas is discharged to the outside by the vacuum pump 26 through the gas outlet of the chamber 21. The cleaning gas may be, for example, a gaseous cleaning solution such as the above-described APM, SPM, HPM, DHF, BHF or deionized water. On the other hand, in the dry mode, as described above, the dry gas is introduced into the chamber 21 from the gas inlet of the chamber 21, and is discharged to the outside by the vacuum pump 26 through the gas outlet of the chamber 21.
According to the cleaning and drying system, the gas introduced into the chamber is switched between the cleaning mode and the drying mode, so that the cleaning device and the drying device can be integrally designed. In addition, cleaning gas is introduced to clean the deep holes in the inverted wafer in the cleaning mode, the cleaning gas can easily reach pollutants at the bottoms of the deep holes, the pollutants can be easily removed from the bottoms of the deep holes under the action of gravity, centrifugal force, impact force of the cleaning gas and chemical action, the cleaning efficiency and reliability of the wafer are improved, and therefore the yield, the quality and the reliability of finally formed semiconductor devices are improved.
When the wafer 25 is dried by the above-mentioned cleaning and drying system, the wafer 25 is first fixed to the pedestal 24 by, for example, electrostatic adsorption or by a fixing device such as a wafer chuck; then, the power supply is switched on to enable the rotary sucker 22 to rotate around the rotating shaft; during the cleaning process, a cleaning gas is introduced into the chamber 21 from the gas inlet of the chamber 21, and is discharged to the outside through the gas outlet of the chamber by the vacuum pump 26; during the drying process, a drying gas is introduced into the chamber 21 from the gas inlet of the chamber 21, and is discharged to the outside through the gas outlet of the chamber by the vacuum pump 26.
Next, an installation of the cleaning and drying system according to an embodiment of the present invention in the etching chamber will be described with reference to fig. 3.
As shown in fig. 3, according to the production speed and the cycle time, an etching chamber and a cleaning and drying system located in the etching chamber are respectively arranged at a plurality of positions, namely (the first position), (the second position), (the fifth position), (the sixth position), and the like. The wafers at the respective steps on the flow line are transferred to a cleaning and drying system by a Transfer Robot (30).
There is a high requirement for cleanliness in semiconductor manufacturing processes, which affects the yield, quality and reliability of semiconductor devices. Through the above, the cleaning and drying system is arranged in the etching cavity, so that integrated flow line production under the condition that wafers cannot go out of the cavity in the whole cleaning and drying process can be realized, secondary pollution is avoided, cleanliness and cleaning and drying efficiency can be improved, and the yield, device quality and reliability of semiconductor devices are improved.
Fig. 4 shows a flow chart of a method for cleaning and drying a wafer according to an embodiment of the invention.
The method for cleaning and drying the wafer provided by the embodiment of the invention comprises steps S101 to S104.
In step S101, a cleaning device disposed in an etching chamber for etching a wafer cleans the wafer with a cleaning solution.
In step S102, the wafer is cleaned with deionized water in the cleaning apparatus for the second time.
In step S103, the wafer is fixed to the base by, for example, electrostatic attraction or by a fixing device such as a wafer chuck. Wherein, the base is arranged on the adsorption surface of the rotary sucker in a manner of rotating together with the rotary sucker. The rotary suction cup is placed upside down in the chamber with the suction surface facing downward and is arranged to be rotatable around the rotary shaft. The chamber is also disposed within the etch chamber.
In step S104, the power is turned on to rotate the spin chuck around the rotation shaft, and the moisture in the wafer is removed by gravity and centrifugal force.
In a preferred embodiment, the cleaning and drying method further includes a step S105 of introducing a drying gas into the chamber through a gas inlet of the chamber, and discharging the drying gas to the outside through a gas outlet of the chamber by using a vacuum pump. The flow of the drying gas can bring the moisture out of the chamber, so that the wafer is prevented from being stuck with the moisture again or being secondarily polluted due to the retention of the moisture in the chamber, and the evaporation of the moisture is facilitated.
In a preferred embodiment, the cleaning and drying method further includes a step S106 of heating the inside of the chamber by a heater to further accelerate the evaporation rate of the moisture in the wafer. In the present embodiment, step S104, step S105, and step S106 can be performed simultaneously.
In a preferred embodiment, the drying method further includes step S107 of evacuating the chamber to further dry the wafer. In this step, the inlet valve and the outlet valve respectively provided at the inlet and the outlet of the chamber are closed, and the vacuum pump is continuously turned on, thereby vacuumizing the chamber.
According to the cleaning and drying method provided by the embodiment of the invention, the inverted rotary sucker is utilized to enable the water in the wafer to be separated under the dual actions of gravity and centrifugal force, so that the efficiency and reliability of drying the wafer are improved, and the yield, the device quality and the reliability of the finally formed semiconductor device are improved.
In addition, the cleaning and drying method utilizes the cleaning device and the drying device which are directly arranged in the etching cavity of the wafer to clean and dry the wafer, so that the operation of taking the wafer out of the etching cavity during cleaning and drying can be omitted, secondary pollution is avoided, the efficiency and the reliability of cleaning and drying the wafer are improved, and the yield, the device quality and the reliability of a finally formed semiconductor device are improved.
The present invention has been described in detail, but the above embodiments are merely examples of all embodiments, and the present invention is not limited thereto. The present invention may freely combine the respective embodiments, may modify any of the components of the respective embodiments, or may omit any of the components of the respective embodiments within the scope of the present invention.
Industrial application
The wafer drying device, the wafer drying method, the wafer cleaning and drying system and the wafer cleaning and drying method are suitable for the semiconductor process of cleaning and drying the wafer.
Claims (20)
1. A drying device for drying a wafer having a deep hole formed by etching, comprising:
the cavity is arranged in an etching cavity for etching the wafer;
a rotary suction cup which is placed upside down in the chamber with a suction surface facing downward and is provided to be rotatable around a rotary shaft;
a power supply connected to the rotating chuck to supply power to the rotating chuck; and
and the base is arranged on the adsorption surface of the rotary sucker in a manner of rotating together with the rotary sucker and is used for fixing the wafer.
2. Drying apparatus according to claim 1,
the base fixes the wafer in an electrostatic adsorption mode.
3. Drying apparatus according to claim 1,
the chamber has an air inlet and an air outlet,
the drying apparatus further comprises a vacuum pump connected to the gas outlet of the chamber,
and introducing a dry gas into the chamber from the gas inlet, and discharging the dry gas to the outside through the gas outlet by the vacuum pump.
4. Drying apparatus according to claim 3,
the drying gas is N2Gas, IPA gas, CO2Any one or more of gases.
5. Drying apparatus according to any one of claims 1 to 4,
also included is a heater for heating the interior of the chamber.
6. Drying apparatus according to claim 5,
the heater is arranged in the rotary sucker.
7. Drying apparatus according to claim 5,
the heater is spaced apart from the rotating chuck.
8. A drying method for drying a wafer with deep holes formed by etching, comprising the steps of:
fixing the wafer to a base, wherein the base is arranged on an adsorption surface of a rotary sucker in a manner of rotating together with the rotary sucker, the rotary sucker is inversely arranged in a cavity in a manner that the adsorption surface faces downwards and is arranged to rotate around a rotating shaft, and the cavity is arranged in an etching cavity for etching the wafer; and
and switching on a power supply to enable the rotary sucker to rotate around a rotating shaft, and separating the water in the deep hole of the wafer by utilizing gravity and centrifugal force.
9. Drying method according to claim 8,
the wafer is fixed on the base in an electrostatic adsorption mode.
10. Drying method according to claim 8,
the method also comprises the steps of introducing dry gas into the chamber through a gas inlet of the chamber, and leading the dry gas out of the chamber to the outside through a gas outlet of the chamber by using a vacuum pump.
11. Drying method according to claim 10,
the drying gas is N2Gas, IPA gas, CO2Any one or more of gases.
12. Drying method according to any of claims 8 to 11,
the method also comprises the step of heating the inside of the chamber by using a heater so as to accelerate the evaporation of water in the deep hole of the wafer.
13. A cleaning and drying system for cleaning and drying a wafer having a deep hole formed by etching, comprising:
the cleaning device is arranged in an etching cavity for etching the wafer and is used for cleaning the wafer; and
drying apparatus as claimed in any one of claims 1 to 7.
14. The cleaning and drying system of claim 13,
the cleaning device cleans the wafer by using a cleaning liquid.
15. A cleaning and drying method for cleaning and drying a wafer with deep holes formed by etching, comprising the steps of:
a step of cleaning the wafer by using a cleaning liquid in a cleaning device arranged in an etching chamber for etching the wafer;
cleaning the wafer for the second time by using deionized water in the cleaning device; and
a step of drying the wafer by using the drying method according to any one of claims 8 to 12.
16. A cleaning and drying system for cleaning and drying a wafer having a deep hole formed by etching, comprising:
the chamber is arranged in an etching cavity for etching the wafer and is provided with an air inlet and an air outlet;
a vacuum pump connected to the gas outlet of the chamber;
a rotary suction cup which is placed upside down in the chamber with a suction surface facing downward and is provided to be rotatable around a rotary shaft;
a power supply connected to the rotating chuck to supply power to the rotating chuck; and
a base which is provided on a suction surface of the spin chuck so as to be rotatable together with the spin chuck, and which fixes the wafer,
in a cleaning mode, a cleaning gas is introduced into the chamber from the gas inlet and is discharged to the outside through the gas outlet by the vacuum pump,
in the dry mode, a dry gas is introduced into the chamber from the gas inlet, and the dry gas is discharged to the outside through the gas outlet by the vacuum pump.
17. The cleaning and drying system of claim 16,
the cleaning gas is a gaseous cleaning liquid of APM, SPM, HPM, DHF, BHF or deionized water.
18. The cleaning and drying system of claim 16 or 17,
the drying gas is N2Gas, IPA gas, CO2Any one or more of gases.
19. The cleaning and drying system of claim 16,
also included is a heater for heating the interior of the chamber.
20. A cleaning and drying method for cleaning and drying a wafer with deep holes formed by etching, comprising the steps of:
fixing the wafer to a base, wherein the base is arranged on an adsorption surface of a rotary sucker in a manner of rotating together with the rotary sucker, the rotary sucker is inversely arranged in a cavity in a manner that the adsorption surface faces downwards and is arranged to rotate around a rotating shaft, and the cavity is arranged in an etching cavity for etching the wafer;
turning on a power supply to rotate the rotary sucker around a rotating shaft;
introducing a cleaning gas into the chamber from a gas inlet of the chamber and discharging the cleaning gas to the outside through a gas outlet of the chamber by a vacuum pump during a cleaning process; and
and a step of introducing a dry gas into the chamber from a gas inlet of the chamber and discharging the dry gas to the outside through a gas outlet of the chamber by the vacuum pump during the drying process.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011024121.1A CN112146359B (en) | 2020-09-25 | 2020-09-25 | Drying device, drying method, cleaning and drying system and cleaning and drying method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011024121.1A CN112146359B (en) | 2020-09-25 | 2020-09-25 | Drying device, drying method, cleaning and drying system and cleaning and drying method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN112146359A CN112146359A (en) | 2020-12-29 |
| CN112146359B true CN112146359B (en) | 2022-03-11 |
Family
ID=73897349
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202011024121.1A Active CN112146359B (en) | 2020-09-25 | 2020-09-25 | Drying device, drying method, cleaning and drying system and cleaning and drying method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112146359B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113721430B (en) * | 2021-03-30 | 2022-09-23 | 腾讯科技（深圳）有限公司 | Photoresist removing method and photoresist removing system |
Family Cites Families (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2592404B2 (en) * | 1994-04-21 | 1997-03-19 | 東京化工機株式会社 | Resist drying equipment |
| KR100696378B1 (en) * | 2005-04-13 | 2007-03-19 | 삼성전자주식회사 | Apparatus and method for cleaning a semiconductor substrate |
| JP2009021324A (en) * | 2007-07-11 | 2009-01-29 | Toshiba Corp | Cleaning method and cleaning device |
| CN201371142Y (en) * | 2009-03-23 | 2009-12-30 | 昆山西钛微电子科技有限公司 | Isopropanol steam cleaning and drying device |
| US8514370B2 (en) * | 2010-02-19 | 2013-08-20 | Mapper Lithography Ip B.V. | Substrate support structure, clamp preparation unit, and lithography system |
| CN102441539B (en) * | 2010-09-30 | 2013-09-18 | 承澔科技股份有限公司 | Element cleaning machine easy for flow guide |
| JP5985156B2 (en) * | 2011-04-04 | 2016-09-06 | 東京エレクトロン株式会社 | Method and apparatus for supercritical drying of semiconductor substrate |
| KR101318493B1 (en) * | 2012-02-15 | 2013-10-16 | 주식회사 케이씨텍 | Spin rinse dry apparatus |
| EP2905814B1 (en) * | 2012-10-02 | 2020-04-01 | Kaneka Corporation | Method for manufacturing crystalline silicon solar cell, and method for manufacturing solar cell module |
| KR101284363B1 (en) * | 2013-01-03 | 2013-07-08 | 덕산하이메탈(주) | Metal core solder ball and heat dissipation structure of semiconductor device using the same |
| JP6455962B2 (en) * | 2013-03-18 | 2019-01-23 | 芝浦メカトロニクス株式会社 | Substrate processing apparatus and substrate processing method |
| CN103474379B (en) * | 2013-09-13 | 2016-02-03 | 华进半导体封装先导技术研发中心有限公司 | Vacuum is prewetted wafer grasping device in chamber |
| CN204792735U (en) * | 2015-05-29 | 2015-11-18 | 中建材浚鑫科技股份有限公司 | Two unification silicon wafers of solar cell framves are dried, transported |
| CN205732097U (en) * | 2016-06-30 | 2016-11-30 | 重庆三零三科技有限公司 | A kind of automatic clearing and drying device of quasiconductor |
| CN108240740A (en) * | 2016-12-26 | 2018-07-03 | 北京北方华创微电子装备有限公司 | A kind of drying equipment |
| CN206688734U (en) * | 2017-02-15 | 2017-12-01 | 韩王成 | A kind of rotatable experiment equipment draining goods of furniture for display rather than for use frame |
| CN206915156U (en) * | 2017-05-15 | 2018-01-23 | 天津市环欧半导体材料技术有限公司 | One kind is used for wafer chamfering machine automatic collecting device |
| CN107442511A (en) * | 2017-08-10 | 2017-12-08 | 苏州德瑞姆超声科技有限公司 | A kind of silicon chip automatic rinser |
| CN109817512B (en) * | 2017-11-22 | 2021-11-09 | 上海新昇半导体科技有限公司 | Wafer cleaning method and cleaning device |
| CN208643448U (en) * | 2018-07-08 | 2019-03-26 | 上海科弦精密工具有限公司 | A kind of high single slot environment protection cleaning machine of cleaning efficiency |
| JP7231350B2 (en) * | 2018-07-25 | 2023-03-01 | 株式会社Ｓｃｒｅｅｎホールディングス | Substrate processing method and substrate processing apparatus |
| CN109226010A (en) * | 2018-09-28 | 2019-01-18 | 昆山市和博电子科技有限公司 | A kind of substrate cleaning machine and basal plate cleaning system |
| CN209935364U (en) * | 2019-03-28 | 2020-01-14 | 德淮半导体有限公司 | Cleaning device |
| CN110303007A (en) * | 2019-04-23 | 2019-10-08 | 南宁聚信众信息技术咨询有限公司 | A kind of dedusting type sorting equipment of the high reliablity based on flip-chip technology |
| CN110690148A (en) * | 2019-10-21 | 2020-01-14 | 缪丁武 | Semiconductor wafer cleaning equipment |
| CN210966116U (en) * | 2019-10-28 | 2020-07-10 | 无锡鑫科金属制品有限公司 | Acid and alkali washing device for copper substrate |
| CN111014167A (en) * | 2019-11-25 | 2020-04-17 | 大同新成新材料股份有限公司 | Intelligent cleaning machine for high-precision chip silicon production and cleaning method thereof |
-
2020
- 2020-09-25 CN CN202011024121.1A patent/CN112146359B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN112146359A (en) | 2020-12-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3802507B2 (en) | Manufacturing method of semiconductor device | |
| CN108475631B (en) | Substrate processing method | |
| US7228645B2 (en) | Multi-zone shower head for drying single semiconductor substrate | |
| US20050115671A1 (en) | Substrate treating apparatus and substrate treating method | |
| US20090120459A1 (en) | Apparatus and method for cleaning semiconductor substrates | |
| US9852914B2 (en) | Sacrificial-film removal method and substrate processing device | |
| KR20150059609A (en) | Mechanisms for wafer cleaning | |
| CN108028195B (en) | Substrate processing method, substrate processing apparatus, and storage medium | |
| CN111681949B (en) | Method for processing back of wafer | |
| CN112146359B (en) | Drying device, drying method, cleaning and drying system and cleaning and drying method | |
| US20080053486A1 (en) | Semiconductor substrate cleaning apparatus | |
| US20080045029A1 (en) | Semiconductor substrate processing apparatus | |
| US20050085081A1 (en) | Process integration of SOI FETs with active layer spacer | |
| US7524705B2 (en) | Method for manufacturing a semiconductor substrate and method for manufacturing a semiconductor device | |
| KR20040058070A (en) | Method of manufacturing a semiconductor device | |
| CN111492463A (en) | Hydrosilylation in semiconductor processing | |
| CN112542466A (en) | Three-dimensional memory manufacturing method | |
| KR20080001958A (en) | Apparatus for cleaning a wafer | |
| JP7397736B2 (en) | Etching method and substrate processing method | |
| US20230411141A1 (en) | Method for removing edge of substrate in semiconductor structure | |
| US20230022780A1 (en) | Method for processing semiconductor structure and method for forming word line structure | |
| US20080047576A1 (en) | Single-substrate type apparatus for processing a substrate | |
| KR20200084167A (en) | Apparatus for processing substrate | |
| JP2021073736A (en) | Method and device for processing substrate | |
| Aoto | Goals for Next-Generation Wafer Cleaning Technology: From the Viewpoint of Wafer Surface Conditioning |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |