201142175 … 六、發明說明: 【發明所屬之技術領域】 本發明係錢紐泡結構,尤其是具有 發光元件讀泡。 【先前技術】 依據國外機_研究,當水分子受财紅外線㈣卿 時’會立即以奶秒的速度振動,而由於分子的振動,帶動二子 的振動織產生出,這魏量轉縣缝日輪會溫暖人 部組織,使血管略為膨脹,血㈣流速加快,達勒部組織運動 的效果。此外,當水分刊遠紅外線照射而產生振動時,會 氧結合的生_、伸展、旋料3種縣,將原大分子 分子間的氫鍵打斷,而形成較小之小水分子團,比如5至6個八 子’即所謂的活化水。 77 習用技射產生遠紅外線的方式—缺彻被動式遠红外線 放射,比如制顧印刷、正溫度餘發_:£(pTc)或錦絡絲。 然而^職術是湖對遠紅外線放射體進行加熱,使熱能量轉 換成通紅外線而發射,因此放射效率很低,—般遠低於·。石山 膜印刷的耐溫細最高不於肩c,PTC及編咖為^ 與細。c,因而應用領域以及製程受到限制。此外 m:及祕絲在操作時,如果接_水會㈣爆炸 的安全醜。 &峨用上 r r_w、磁似細_輻射層而 /又有接觸水會發生爆炸危險以產生遠紅外線的喊燈泡結構,進 而解決上述習用技術的問題。 【發明内容】 本發明之主要目的在舰-種遠紅特喊錢、轉,包括 201142175201142175 ... VI. Description of the Invention: [Technical Field to Be Invented by the Invention] The present invention relates to a structure of a crypto-bubble, in particular, a luminescent element reading bubble. [Prior Art] According to the foreign machine _ research, when the water molecules are subject to the financial infrared (four) Qing's, they will immediately vibrate at the speed of the milk seconds, and due to the vibration of the molecules, the vibration of the two children will be generated. The sun wheel will warm the human body, making the blood vessels slightly inflated, the blood (4) flow rate increasing, and the effect of the tissue movement of the Dal. In addition, when the moisture is generated by the far-infrared irradiation, the oxygen-bonded _, stretching, and spinning materials are used to break the hydrogen bonds between the original macromolecules to form smaller small water molecules. For example, 5 to 6 eight sons, the so-called activated water. 77 The way in which the conventional technique produces far-infrared rays—there is a lack of passive far-infrared radiation, such as printing, positive temperature _: £(pTc) or brocade. However, the job is to heat the far-infrared emitters of the lake, so that the heat energy is converted into infrared rays and emitted, so the radiation efficiency is very low, generally far below. The temperature resistance of Shishan film printing is not higher than the shoulder c, and the PTC and the coffee maker are ^ and fine. c, thus the application area and process are limited. In addition, m: and the secret silk in operation, if the _ water will (four) explosion is safe and ugly. & use the r r_w, magnetic like fine _ radiant layer / / there is a danger of explosion in contact with water to generate a far-infrared shark bulb structure, and then solve the above problems of the conventional technology. SUMMARY OF THE INVENTION The main purpose of the present invention is to make money and transfer in the ship-species far red, including 201142175
發光元件、陶究基板、遠紅外線熱輻射層、電路翠元、燈私 罩及接頭’遠紅㈣熱輻縣與發光元件分卿成糊 上部及下部絲’電料元胁接_並魏雜至發光元 接頭,鮮包發光元件及_餘,燈財結_以 遠紅外線熱減層,綱個以輕外部電源,越頭藉第 氣連接線而連接至電路單元,細提供電源,而電路單元藉第一 電氣連接線而連接至⑽元件以提供驅動發私件所需的魏^ 號或電力。遠紅外線減射層將發光元件所產生的熱量以遠_ 線熱韓射方式朝燈罩向外傳播’同時可降低發光元件的操作溫 度’提高發光元件的發光穩定度,減緩老化速率,延長使用壽皿限, 進而提升遠紅外線的發光效率及使用安全性。 π又 【實施方式】 以下配合®式及元件符紐本發明之實财式做更詳細的說 明’俾使熟習該項技藝者在研讀本說明書後能據以實施。 參閲第-圖’本發明遠红外線陶£燈泡結構的示意圖。如第 -圖所不,本發明第-實酬的遠紅外、_紐泡結構包括發光 元件10、陶瓷基板20、遠紅外線熱輻射層3〇、電路單元4〇、燈 殼^)、燈罩60及魏70,用以藉發光元件1〇發射光線,同時^ 用遇紅外線熱輻射層30發射遠紅外線r,主要係包含4〜4〇〇^m之 間的範圍,尤其是6μηι至14μηι之間的範圍。 發光元件10可包括發光二極體(LED)晶片。 陶瓷基板20具有上部表面及下部表面,而LED晶片1〇係在 藍寳石基板(圖巾未顯)上形成,並連結至陶竞基板Μ的下部表面。 遠紅外線熱輻射層30係形成於陶瓷基板2〇的上部表面上。電路 單兀40位於接頭70内,燈殼50連結接頭70以包圍住遠紅外線 201142175 熱輻射層30。 燈罩60包圍住LED晶片1〇及陶竟基板2〇的下部表面。接 頭70個以連接至外部電源,且接襲藉第—電氣連接線(圖中 未顯示)*連接至祕私4〇哺供魏,t料元⑽藉第二電 氣連接線(圖中未顯示)而連接至LED晶片1〇以提供驅動或點亮 LED晶片1〇所需的電氣信號或電力。 〜 遠紅外線熱輕射層3〇包括金屬非金屬組合物,例如包括銀、 銅、錫、紹、鈦、鐵及録的至少其中之一,或包括銀'鋼、锡、 铭、欽、鐵及錄的至少其中之—的合金,或包括銀、銅、錫、銘、 鈦、鐵及錄的至少其巾之—的氧化物錢化物,或包括至少删、 碳的其中之一的氧化物或氮化物或無機酸機化合物。 燈殼5〇可為由陶曼材料或丙稀-丁二婦-苯乙烤(ABS)構成, 其中陶€材料適用於較高功率及較高操作溫度的應用,而細可 適用於中、低功率及中、低溫度的領域。燈罩6G可為透光性的聚 碳酸酯或玻璃。 遠紅外線脑射層3〇具有表面顯觀構,可難輻射方式將 LED晶片10及電路單元4〇所產生的熱量以遠紅外線細究基板 20的下部表面傳播’亦即圖中向下的遠紅外線尺所示。由於遠紅 外線熱輻賴30所發射的遠紅外線R包含遠紅外線光譜,亦即 5μηι至18μηι的範圍,或較佳的6μηι至14μηι的範圍因此本 發明第-貫施例的遠紅外線陶究燈泡結構可產生所需的遠紅外 線。 要注意的是’圖中的接頭7〇是以職狀接頭表示,比如Ε27, 但只是用峨明本發明之雜的示範性實例而6,並翻以限定 本發明的範圍,因此’接頭7G可包括其他燈泡的接頭,例如£14、 G4、G9、MR11 或 MR16 等。 201142175 參閱第一® ’本發明第二實施例遠紅外線陶竞燈泡結構的示 意圖。如第二圖所示’第二實施例的遠紅外線陶紐泡結構包括 LED 33片1〇、陶瓷基板2〇、遠紅外線熱輻射層%、電路單元、 燈殼50 '燈罩60、奈米釉散熱蓋65及接頭70,用以藉lED晶片 10發射光線’同時彻遠紅外線熱輻射層32發射遠紅外線 第二圖的第二實施例係類似於第一圖的第一實施例,而第二 圖的遠紅外線触射層32的概仙同於帛—關遠紅外線熱輕 射層30。 ’…Light-emitting elements, ceramic substrate, far-infrared heat radiation layer, circuit Cuiyuan, lamp private cover and joint 'far red (four) heat spoke county and light-emitting components are divided into upper and lower wire 'electric material element threat _ and Wei miscellaneous To the illuminating element connector, the fresh-package illuminating element and the _Yu, the lamp _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ The (10) component is connected by a first electrical connection to provide the power or power required to drive the smuggler. The far-infrared ray-reducing layer transmits the heat generated by the illuminating element to the outside of the lamp cover in a far-line heat-producing manner. At the same time, the operating temperature of the illuminating element can be lowered to improve the illuminating stability of the illuminating element, slow down the aging rate, and extend the use of the shovel. Limit, and thus improve the luminous efficiency and safety of far infrared rays. π 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 Referring to the drawings - the schematic diagram of the far infrared ray bulb structure of the present invention. As shown in the first figure, the far-infrared, _ bubble structure of the present invention includes the light-emitting element 10, the ceramic substrate 20, the far-infrared heat radiation layer 3, the circuit unit 4, the lamp housing, and the lampshade 60. And Wei 70, for emitting light by the light-emitting element 1〇, and emitting the far-infrared rays r by the infrared heat radiation layer 30, mainly including a range between 4~4〇〇^m, especially between 6μηι and 14μηι The scope. Light emitting element 10 can include a light emitting diode (LED) wafer. The ceramic substrate 20 has an upper surface and a lower surface, and the LED wafer 1 is formed on a sapphire substrate (not shown) and is bonded to the lower surface of the ceramic substrate. The far-infrared heat radiation layer 30 is formed on the upper surface of the ceramic substrate 2A. The circuit unit 40 is located within the connector 70, and the lamp housing 50 is coupled to the connector 70 to enclose the far infrared ray 201142175 heat radiation layer 30. The lamp cover 60 surrounds the lower surface of the LED chip 1 and the ceramic substrate 2 . 70 joints are connected to the external power supply, and the second electrical connection line is connected by the first electrical connection line (not shown)* to the secret private unit, and the second electrical connection line (10) is not shown in the figure. And connected to the LED chip 1 to provide the electrical signal or power required to drive or illuminate the LED chip. ~ Far-infrared thermal light-emitting layer 3〇 includes metal non-metallic composition, including at least one of silver, copper, tin, Shao, titanium, iron and recorded, or including silver 'steel, tin, Ming, Chin, iron And at least one of the alloys, or oxides including silver, copper, tin, indium, titanium, iron, and at least the towels thereof, or oxides including at least one of carbon and carbon Or a nitride or inorganic acid compound. The lamp housing 5〇 can be made of Tauman material or acrylonitrile-butadiene-benzene bake (ABS), which is suitable for higher power and higher operating temperature applications, and fine for medium and Low power and medium and low temperature fields. The lamp cover 6G may be a translucent polycarbonate or glass. The far-infrared brain ray layer 3 〇 has a surface appearance structure, and the heat generated by the LED chip 10 and the circuit unit 4 传播 can be propagated in a difficult radiation manner to the lower surface of the substrate 20 by far infrared ray. Shown. Since the far-infrared rays R emitted by the far-infrared heat radiation 30 include a far-infrared spectrum, that is, a range of 5 μm to 18 μm, or preferably a range of 6 μm to 14 μm, the far-infrared light bulb structure of the first embodiment of the present invention is It can produce the required far infrared rays. It is to be noted that the joint 7' in the figure is represented by a joint joint, such as Ε27, but is merely used to exemplify the exemplary embodiment of the present invention, and is turned over to define the scope of the present invention, thus 'joint 7G Links to other bulbs may be included, such as £14, G4, G9, MR11 or MR16. 201142175 Reference is made to the first 'second embodiment of the far infrared ray ray bulb structure of the second embodiment of the present invention. As shown in the second figure, the far-infrared ceramic bubble structure of the second embodiment includes an LED 33 sheet, a ceramic substrate 2, a far-infrared heat radiation layer%, a circuit unit, a lamp housing 50', a lampshade 60, and a nano glaze. The heat dissipating cover 65 and the joint 70 are used to emit light by the lED wafer 10 while the second embodiment of the far infrared ray radiating layer 32 emits the far infrared ray. The second embodiment is similar to the first embodiment of the first figure, and the second embodiment. The far-infrared ray-emitting layer 32 of the figure is similar to the 帛-gate far-infrared thermal light-emitting layer 30. ’...
土第二實施例與第一實施例的主要差異點在於,第二實施例的 遠紅外線熱輻射層32係形成於鮮6〇的上部表面,亦即第二圖 中朝上的表面。另-差異點為,燈殼5G連結接頭%以包圍住陶 兗基板20的上部表面。因此,LED晶片1〇所發射的光線在朝燈 罩60傳送時,可加驗罩6()上㈣二遠紅外雜輻射層%,進 而利用遠紅外線熱輻射層32的熱輻射特性以產生遠紅外光,並向 下傳达,如第二圖中的遠紅外線㈣示。同時,第二遠紅外線熱 輕射層32具有透紐,以使哪;1()所發射的光線穿透而朝 下方傳播,而同時具有照明功能。 订左共點為,在燈殼50的下方安置奈米轴散熱蓋 65,且奈米釉散熱蓋65與燈殼5〇包圍住陶究基板2〇的上部表面 其中奈米袖散熱盍&係由奈米顆粒經燒結而形成,骑米顆粒〒 包括氧化㉟、氮她、氧傾及氣化#5的其巾之-。此外,奈米 釉散熱蓋65具有複數個散熱孔π,同時燈殼%具於 散熱孔^的開口,用以藉空氣的對流以加強散熱效率。圖中3 米袖放熱蓋65係不接軸絲板Μ而以卿:關,但是本發明 並非受限於此,而是奈_散« &也可接_絲板2〇 . 孔67的做可騎二_福直餘貫穿孔,但要注意的是,第 201142175 二圖的直管狀貫穿孔只是㈣說明本發卿朗錢性實例而 已,因此,散熱孔67可為其他型式,比如第三圖所示具彎折狀貫 穿孔的散熱孔67A、具彎折狀孔洞的散熱孔67B或具直管狀孔洞 的散熱孔67C。 參閱第四®,本發郷三實關遠紅外_紐泡結構的示 意圖。如第四圖所*,第三實施例的遠紅外線陶究燈泡結構包括 LED晶片1〇、陶究基板2〇、遠紅外線熱輻射層32、熱輕射散熱層 34 '電路單元40、燈殼50、燈罩6〇、奈米釉散熱蓋幻及接頭%, 利用遂紅外線熱輻射層32發射所需的遠紅外線似,並利用熱輻射 散熱層34產生熱輻射Ri,以加強散熱效率。 第四圖的第三實施例係類似於第二圖的第二實施例,其中第 四圖的遠紅外線熱練層32的特徵係相同於第二圖的遠紅外線熱 輻射層32,而且第四圖的奈米釉散熱蓋65的特徵係相同於第二圖 的奈米轴散熱蓋65。因此’相同功能的細節在此不再贅述。 第四圖的第三實施例與第二圖的第二實施例之間的主要差異 點在於,第三實施例的熱輕射散熱層34係形成於陶竟基板2〇的 下。P表面’且LED晶片1〇係利用銀膠而連結至熱輕射散熱層34, 其中熱輻射散熱層34的組成係相同於第二圖的遠紅外線熱輻射層 32。熱賴射散熱層34 ’接收LED晶片1〇所產生的熱量而以熱輻 射方式傳播至奈米釉散熱蓋65,如圖中的熱輻射ri。 參閱第五圖,本發明第四實施例遠紅外線陶瓷燈泡結構的示 思圖。本發明第四實施例的遠紅外線陶瓷燈泡結構包括發光元件 10、陶瓷基板20、遠紅外線熱輻射層3〇、電路單元4〇、燈殼5〇、 燈罩60及接頭70,用以藉發光元件1〇發射光線,同時利用遠紅 外線熱輻射層30發射遠红外線R’主要係包含4〜4〇〇μιη之間的範 圍’尤其是6μιη至14μηι之間的範圍。 201142175 第五圖的第四實施例係類似於第—_第_實施例,第五圖 的第四實施例與第-圖的第一實施例之間的主要差異點在於,遠 紅外線熱輻射層30倍設置於陶板2〇的下方,以及發光元件 10的上方,直接將電路單元40所產生的缝以遠紅外線朝下傳 播,亦即圖中向下的遠紅外線R所示。 立參閱第八圖’本發明第五實施例遠紅外線陶究燈泡結構的示 忍圖。本發明第五實闕的遠紅外線燈餘構包括發光元件 10、陶兜基板20、第-熱_層36、第二織射層38、電路單元 4〇、燈殼50、鮮60及接頭7G,_藉發光元件1G發射光線, 同時利用遠紅外線熱輻射層3G發射遠紅外線尺,主要係包含 4〜400μιη之間的範圍,尤其是—至Μμηι之間的範圍。 第六圖的第五實施例係類似於第一圖的第一實施例及第五圖 的第四實施例之結合’主要差異點在於設置第—熱姉層%係設 置於陶曼基板20的上方、設置第二熱輻射層38於陶究基板2〇的 下方以及發光元件1G的上方,將電路單元4G所產生的熱量以遠 紅外線朝下傳播’亦即圖中向下的遠紅外線R所示。 本發明的特點主要在於’糊遠紅外線熱輻射層吸收發光元 件及電路單元的熱量而產生遠紅外線,且録—般溫度下操作而 不需額外的加熱處理與裝置,因此可避免高溫操作所引起的危險 及缺點’藉以提高使用安全性。 本發明的另-特點在於’遠紅外線熱輕射層具有熱輕射散熱 作用’可降低發光元件的操作溫度,亦即LED晶片的溫度,因而 能改善LED W的絲及發域定度,藉以提升整體遠紅外線的 發射效率。 本發明的再一特點在於,藉奈米釉散熱蓋提供進—步散熱作 用’且奈米釉散熱蓋具有散熱孔,可利用散熱孔中的空氣對流效 201142175 應以加強絲’能更進—步降低LED以的操作溫度。 以上所述麵為職解縣㈣之麵實細,並非企 以對本發雜任何狱±之限制’是以,凡有在姻之發明精神 下所作有關本㈣之任何㈣或變更,皆健包括在本發明意圖 保護之範疇。 【圖式簡單說明】 第-圖為本發明第—實施例遠紅外_究燈泡結構的示意圖。 々第二圖為本發明第二實施例遠紅外_纽泡結構的示意圖。 第三圖為第二圖中散熱孔的另一型式之示意圖。 第四圖為本發萄三實施例遠紅外_紐泡結構的示意圖。 第五圖為本發明第四實關遠紅外線喊燈泡結構的示意圖。 第六圖為本發明第五實劇遠紅外紐泡結構的示意圖。 【主要元件符號說明】 10發光元件(LED晶片) 2〇陶瓷基板 30遠紅外線熱轄射層 • 32遠紅外線熱輻射層 34熱輻射散熱層 36第一熱輻射層 38第二熱輻射層 40電路單元 50燈殼 60燈罩 65奈米釉散熱篕 67散熱孔 201142175 67A散熱孔 67B散熱孔 67C散熱孔 70接頭 R遠紅外線 R1熱輻射 R2遠紅外線The main difference between the second embodiment of the soil and the first embodiment is that the far-infrared heat radiating layer 32 of the second embodiment is formed on the upper surface of the fresh crucible, that is, the upward facing surface in the second drawing. Another difference is that the lamp housing 5G is connected to the joint % to surround the upper surface of the ceramic substrate 20. Therefore, when the light emitted by the LED chip 1 is transmitted toward the lamp cover 60, the (4) two far infrared radiation layer % can be added to the cover 6 (), and the heat radiation characteristics of the far infrared heat radiation layer 32 are utilized to generate the far infrared. Light, and convey down, as shown in the far picture of the far infrared (four). At the same time, the second far-infrared thermal light-emitting layer 32 has a transmissive layer so that the light emitted by 1() penetrates and propagates downward, while having an illumination function. The left common point is that a nano-axis heat-dissipating cover 65 is disposed under the lamp housing 50, and the nano-glaze heat-dissipating cover 65 and the lamp housing 5 〇 surround the upper surface of the ceramic substrate 2, wherein the nano-sleeve heat sink & It is formed by sintering of nano particles, including rice oxidized 35, nitrogen, oxygen, and gasification #5. In addition, the nano glaze heat-dissipating cover 65 has a plurality of heat-dissipating holes π, and the lamp housing is provided in the opening of the heat-dissipating hole to enhance the heat-dissipating efficiency by air convection. In the figure, the 3-meter sleeve heat-dissipating cover 65 is not connected to the shaft plate, but is not limited to this, but the present invention is also limited to the wire plate 2 amp. You can ride the second _ Fu straight through hole, but it should be noted that the straight tubular through hole of the 201142175 two figure is only (4) to illustrate the example of the hair, so the vent 67 can be other types, such as The three figures show a heat dissipation hole 67A having a bent through hole, a heat dissipation hole 67B having a bent hole, or a heat dissipation hole 67C having a straight tubular hole. Refer to the fourth®, the intention of the three-way far infrared _ 泡 bubble structure. As shown in the fourth figure, the far-infrared ray light bulb structure of the third embodiment includes an LED chip 1 〇, a ceramic substrate 2 〇, a far-infrared heat radiation layer 32, a thermal light-radiating heat-dissipation layer 34' circuit unit 40, and a lamp housing. 50. The lampshade 6 〇, the nano glaze heat-dissipating cover and the joint %, use the 遂 infrared heat radiation layer 32 to emit the required far-infrared ray, and use the heat radiation heat-dissipating layer 34 to generate the heat radiation Ri to enhance the heat dissipation efficiency. The third embodiment of the fourth figure is similar to the second embodiment of the second figure, wherein the far infrared ray thermal layer 32 of the fourth figure has the same features as the far infrared ray heat radiation layer 32 of the second figure, and the fourth The nano glaze heat dissipation cover 65 of the figure is identical to the nano shaft heat dissipation cover 65 of the second figure. Therefore, the details of the same function will not be described here. The main difference between the third embodiment of the fourth figure and the second embodiment of the second figure is that the thermal light-emitting heat dissipation layer 34 of the third embodiment is formed under the ceramic substrate 2〇. The P surface 'and the LED wafer 1 are bonded to the thermal light-emitting heat sink layer 34 by means of silver paste, wherein the heat radiation heat dissipation layer 34 has the same composition as the far-infrared heat radiation layer 32 of the second figure. The heat-radiating heat-dissipating layer 34' receives heat generated by the LED wafer 1 and is thermally radiated to the nano-glaze heat-dissipating cover 65, such as the heat radiation ri in the figure. Referring to Fig. 5, there is shown a schematic view of a structure of a far infrared ray ceramic bulb according to a fourth embodiment of the present invention. The far-infrared ceramic bulb structure of the fourth embodiment of the present invention comprises a light-emitting element 10, a ceramic substrate 20, a far-infrared heat radiation layer 3, a circuit unit 4, a lamp housing 5, a lamp cover 60 and a joint 70 for borrowing a light-emitting element. 1〇 emits light while using the far-infrared heat radiation layer 30 to emit far-infrared rays R' mainly consisting of a range between 4 and 4 μm, especially between 6 μm and 14 μm. 201142175 The fourth embodiment of the fifth figure is similar to the first embodiment, and the main difference between the fourth embodiment of the fifth figure and the first embodiment of the first figure is that the far-infrared heat radiation layer 30 times is placed under the enamel plate 2, and above the illuminating element 10, the slit generated by the circuit unit 40 is directly propagated downward with far infrared rays, that is, the far far infrared ray R shown in the figure. Referring to the eighth drawing, the display of the far-infrared ray bulb structure of the fifth embodiment of the present invention is shown. The far infrared ray lamp of the fifth embodiment of the present invention comprises a light-emitting element 10, a ceramic pocket substrate 20, a first heat-layer 36, a second woven layer 38, a circuit unit 4, a lamp housing 50, a fresh 60 and a joint 7G. The light-emitting element 1G emits light while the far-infrared heat radiation layer 3G is used to emit the far-infrared ray scale, mainly including a range between 4 and 400 μm, in particular, a range between —μηι. The fifth embodiment of the sixth embodiment is similar to the combination of the first embodiment of the first figure and the fourth embodiment of the fifth figure. The main difference is that the first heat enthalpy layer is disposed on the Tauman substrate 20. Above, the second heat radiation layer 38 is disposed under the ceramic substrate 2〇 and above the light-emitting element 1G, and the heat generated by the circuit unit 4G is propagated downward by far infrared rays, that is, the far-infrared rays R shown in the figure are downward. . The invention is mainly characterized in that the paste far infrared heat radiation layer absorbs the heat of the light emitting element and the circuit unit to generate far infrared rays, and operates at the normal temperature without additional heat treatment and device, thereby avoiding the high temperature operation. The dangers and shortcomings 'to improve the safety of use. Another feature of the present invention is that the 'far-infrared thermal light-emitting layer has a heat-radiating heat-dissipating effect' can reduce the operating temperature of the light-emitting element, that is, the temperature of the LED chip, thereby improving the wire and the hair field of the LED W, thereby Improve the efficiency of the overall far infrared ray emission. Another feature of the present invention is that the nano-glaze heat-dissipating cover provides an in-step heat-dissipating effect, and the nano-glaze heat-dissipating cover has a heat-dissipating hole, and the air-to-flow effect in the heat-dissipating hole can be utilized, and the reinforcing wire can be further advanced. Step to lower the operating temperature of the LED. The above-mentioned aspects are the actual details of the county (4). It is not intended to limit the prisoner's sentence to the prisoner's. Anyone who has made any (4) or change in this (4) under the spirit of the invention of the marriage includes It is intended to be within the scope of the invention. BRIEF DESCRIPTION OF THE DRAWINGS The first figure is a schematic view of the structure of the far-infrared light bulb of the first embodiment of the present invention. The second figure is a schematic diagram of a far-infrared-bubble structure according to a second embodiment of the present invention. The third figure is a schematic view of another type of heat dissipation holes in the second figure. The fourth figure is a schematic diagram of the far infrared_bubble structure of the third embodiment of the invention. The fifth figure is a schematic diagram of the structure of the fourth real-time far-infrared shunting light bulb of the present invention. The sixth figure is a schematic diagram of the fifth real drama far infrared bubble structure of the present invention. [Main component symbol description] 10 light-emitting element (LED chip) 2 〇 ceramic substrate 30 far-infrared thermal ray-control layer • 32 far-infrared heat radiation layer 34 heat radiation heat dissipation layer 36 first heat radiation layer 38 second heat radiation layer 40 circuit Unit 50 lamp housing 60 lamp cover 65 nano glaze cooling 篕 67 cooling hole 201142175 67A cooling hole 67B cooling hole 67C cooling hole 70 connector R far infrared R1 thermal radiation R2 far infrared