M393636 五·、新型說明： 【新型所屬之技術領域】 本創作係有關一種陶瓷燈泡結構，尤其是具有發射遠紅外線的 發光元件之燈泡。 【先前技術】 依據國外機構的研究，當水分子受到遠紅外線(Far_IR)照射 時，會立即以1012/秒的速度振動，而由於分子的振動，帶動分子M393636 V. New description: [New technical field] This creation is about a ceramic bulb structure, especially a bulb with a light-emitting element that emits far-infrared rays. [Prior Art] According to research by foreign institutions, when water molecules are exposed to far infrared rays (Far_IR), they will immediately vibrate at a rate of 1012/sec, and the molecules will be driven by the vibration of molecules.
的振動就·生出能量’這些能量賴為熱量時就會溫暖人體内 雜織’使血I；略為膨脹，血液的流速加快，達咖部組織運動 的效果。料，當水分子因遠紅外線照射而產生振_，會使氣 氧結合的鏈產生壓縮、伸展、旋轉等3種現象，將原大分子團水 分子間的__，_成較小之小水分子目，· 5至6個分 子，即所謂的活化水。 77 .習用技術中產生遠紅外線的方式—般是利用被動式遠紅外線 放射’比如使用碳膜印刷、正溫度係數發熱陶竟(pTc)或錄鉻絲。 然而’制技術是_誠紅騎放射體進行蝴，使熱能量轉 換成遠紅外線而發射，因此放射效率很低，—般遠低於 膜印刷的㈣關最料於戰，PTC 相為= 與寒C，因而應用領域以及製程受到限制。此外，習 ptc 麟在操⑽，㈣翻麻會引起使上 的安全醜。 叫便用上 因此 ，需要-種利、發光稀及遠紅外線 沒有接觸水會發生_危險喊生遠紅外 _曰 而解決上述猶關題。 ㈤缝糖構，進 M393636 .· 【新型内容】 • « * · ' 本創作之主要目的在提供—種遠紅外_聽泡結構，包括 發光7L件 '陶瓷基板、遠紅外線熱輻射層 '電路單元、燈殼、产 罩及接頭’遠紅外線熱輻射層與發統件分卿成於喊^板二 上部及下部表面，電路單元位於接頭内並電氣連接至發光元件及 接頭，燈罩包圍住發光元件及陶兗基板，燈殼連結接頭以包圍住 k 遠紅外線熱輻射層，接頭係、用以連接外部電源，且接頭藉第一電 鲁 11連接線而連接至電路單元，藉以提供電源，而電路單元藉第二 電氣連接線而連接錄光元件以提供鶴發光元件所需的電氣信 號或電力。遠紅外賴輻射層將發光元件所產生的熱量以遠^卜 線熱輻射方式朝燈罩向外傳播，同時可降低發光元件的操作溫 度，提高發光元件的發光穩定度’減緩老化速率，延長使用壽限， 進而提升遠紅外線的發光效率及使用安全性。 【實施方式】 以下配合®式及元件符麟本翁之實施方式做更詳細的說 • 明’俾使熟f該項技藝者在研讀本說明紐能據以實施。 參閱第—®，本解遠紅外線陶紐親構的示意圖。如第 -圖所示，本創作第-實施例的遠紅外線陶£燈泡結構包括發光 兀件10、陶瓷基板20、遠紅外線熱輻射層3〇、電路單元4〇、燈 殼，、燈罩6〇及接頭7〇，用以藉發光元件1〇發射光線，同時利 用遂紅外線熱輻射層30發射遠紅外線R，主要係包含4〜4⑻帅之 間的範圍，尤其是6μηχ至14μιη之間的範圍。 發光元件10可包括發光二極體(LED)晶片。 陶瓷基板20具有上部表面及下部表面，而LED晶片1〇係在 藍寶石基板(圖中未顯)上形成，並連結至陶竟基板2〇的下部表面。 4 M393636 ，紅外線熱H射層3G係形成於_基板2㈣上部表面上。電路 單兀40位於接頭7〇内，燈殼％連結接頭7㈣包陳遠紅外線 熱輻射層30〇 ' 燈罩60包園住LED晶片1〇及陶竟基板如的下部表面。接 頭7〇係用Uit接餅部電源’且接頭㈣第—魏連接線(圖中 細示)而連電路單元4(UX提供電源，單元*藉第二電 氣連接線(圖中未顯示)而連接至LED晶片10以提供驅動或點亮 LED晶片1G所需的電氣信號或電力。 遠、、工外線熱輻射層3〇包括金屬非金屬組合物，例如包括銀、 銅、錫、紹、鈦、鐵及録的至少其中之一，或包括銀、銅、錫、 紹、鈦、鐵及錄的至少其中之—的合金，或包括銀、銅、錫、紹、 欽、鐵及錄的至少其中之一的氧化物或_化物，或包括至少删、 碳的其中之一的氧化物或氮化物或無機酸機化合物。 燈殼50可為由陶瓷材料或丙烯·丁二烯_笨乙烯(ABS)構成， 其中陶竟材料適用於較高功率及較高操作溫度的應用，而趣可 適用於中、低功率及中、低溫度的領域。燈罩6〇可為透光性的聚 碳酸酯或玻璃。 遠紅外線熱輻射層30具有表面顯微結構，可藉熱輻射方式將 LED晶片10及電路單元4〇所產生的熱量以遠紅外線朝陶瓷基板 20的下部表面傳播，亦即圖中向下的遠紅外線r所示。由於遠紅 外線熱輻射層30所發射的遠紅外線R包含遠紅外線光譜，亦即 5μηι至18μπι的範圍，或較佳的6μιη至14μιη的範圍，因此，本 創作第一實施例的遠紅外線陶瓷燈泡結構可產生所需的遠紅外 線。 要注意的是’圖中的接頭70是以螺旋狀接頭表示，比如Ε27, 但只是用以說明本創作之特點的示範性實例而已，並非用以限定 5 聊3636 本創作的範圍’因此，接頭7G可包括其他燈泡的接頭，例如㈣、 G4、G9、MR11 或]^16等。 ·' 立參閱第二圖’本創作第二實施例遠紅外線陶竟燈泡結構的示 、'圖如第—圖所不’第二實關的遠紅外線喊燈泡結構包括 晶片1〇、陶絲板20、遠紅外線熱輻射層32、電路單元4〇、 燈殼50、鮮6〇、奈米崎鮮&及_ %，肋藉咖曰曰片 1〇發射光線’同時利用遠紅外線熱輻射層32發射遠紅外線 第-圖的第二實施例係類修第—圖的第_實施例，而第二 圖的遠紅外線熱輻射層32的特徵係相同於第一圖的遠紅外線 射層30。 土第二實施例與第一實施例的主要差異點在於，第二實施例的 退紅外線熱輻射層32係形成於燈罩6〇的上部表面，亦即第 中朝上的表面。另—差異點為，燈殼5〇連結接頭7(UX包圍;^ =基板20的上部表面。因此，咖晶片1()所發射的光線在朝燈 罩6〇傳达時，可加熱燈罩60上的第二遠紅外線熱輻射層32，進 而利用遠紅外線熱輻射層32 _輻觸性以產生遠紅外光 下傳送’如第二圖中的遠紅外線R所示。同時，第二遠紅° 輕射層32具有透光性，以使咖晶片⑴所發射 透朝 下方傳播，關時具有照明功能。 W透而朝 此外’再-差異點為，在燈殼5G的下方安置 65,且奈米釉散熱蓋65與燈㈣包圍住陶絲板2G的上 其中奈雜賴蓋65係由絲·輯糾軸^ 包括氧她 '氮化銘、氧化錯及咖爾中之_。此夕^立可 轴散熱蓋65具有複數個散熱孔67,同時燈殼如具有對應於= 散熱孔67的開口，用以藉空氣的對流以加強散熱效率。圖中^ 米釉散熱蓋65係不接觸陶纖Μ _軸，但是本^ 6 亚非又限於此’而是奈米釉散熱蓋65也可接_錢板如。散熱 孔67的形狀可鱗二圖所示的直f狀貫穿孔但要注意的是，第 二圖的直管狀貫穿孔只是用以說明本創作特徵的示範性實例而 已，因此’散熱孔67可為其他型式，邮第三圖所示具騎狀貫 穿孔的散熱孔67A、具彎折狀孔洞的散· 或具直管狀孔洞 的散熱孔67C。 參閱第四圖’本創作第三實施例遠紅外_紐泡結構的示 意圖。如第四騎示，第三實施例的遠紅外線喊燈泡結構包括 LED晶;i Π)、陶錄板2G、遠紅外線難射層％、熱輻射散執層 34、電路單元40、燈殼50、燈罩6〇、奈米釉散熱蓋&及接頭％， 糊遠紅外線熱轄射層32發射所需的遠紅外線幻，並糊熱轄射 散熱層34產生熱輕射ri，以加強散熱效率。 第四圖的第三實施例係類似於第二圖的第二實施例，其中第 四圖的遠紅外線熱輻射層32的特徵係相同於第二圖的遠紅外線熱 輻射層32 ’而且第四圖的奈米釉散熱蓋&的特徵係相同於第二圖 的奈米轴散減65。因此，相同魏的㈣在此不再費述。 第四圖的第三實施例與第二圖的第二實施例之間的主要差異 點在於’第三實施例的熱輕射散熱層34係形成於陶竟基板2〇的 下部表面’且LED ¥ H)係_轉喊敍熱輻概熱層％， 其中純射散簡34驗祕彳目同於第二_遠紅外料轄射層 32。熱輻概歸34，接社ED ^㈣產生的歸而以熱輕 射方式傳播至奈米釉散熱蓋65 ’如圖中的熱輕射。 參閱第五圖，本發明第四實施例粗外_紐泡結構的示 意圖。本發明第四實施例的遠紅外線陶紐泡結構包括發光元件 10、陶瓷基板20、遠紅外線熱輻射層3〇、電路單元4〇、燈殼5〇、 燈罩60及接頭70，用以藉發光元件1〇發射光線，同時利用遠紅 外線熱輻射層3G.發射遠紅外線R，主要係包含4〜4⑻叫之間的範 圍，尤其是6μηι至14μτη之間的範圍。 第五圖的第四實關係類似於第—關第—實施例，第五圖 的第四實施例與第-圖的第一實施例之間的主要差異點在於，遠 紅外線熱輻射層3G係設置於陶絲板2G的下方，以及發光元件 W的上方，直接將電路單元4〇所產生的熱量以遠紅外線朝下傳 播’亦即圖中向下的遠紅外線R所示。 參閱第六圖，本發明第五實施例遠紅外線陶瓷燈泡結構的示 思圖。本發明第五實施例的遠紅外線陶瓷燈泡結構包括發光元件 10、陶瓷基板20、第一熱輻射層36、第二熱輻射層38、電路單元 4〇、燈殼50、燈罩60及接頭70 ,用以藉發光元件1〇發射光線， 同時利用退紅外線熱輻射層3〇發射遠紅外線r，主要係包含 4〜400μιη之間的範圍，尤其是6μπι至14jjm之間的範圍。 第六圖的第五實施例係類似於第一圖的第一實施例及第五圖 的第四實施例之結合’主要差異點在於設置第—滅射層36係設 置於陶瓷基板20的上方、設置第二熱輻射層38於陶瓷基板2〇的 下方以及發光元件10的上^ ’將電路單元4Q職钱熱量以遠 紅外線朝下傳播，亦即圖中向下的遠紅外線R所示。 本創作的特點主要在於，利用遠紅外線熱輻射層吸收發光元 件及電路單元的熱量而產生遠紅外線，且係在一般溫度下操作而 不需額外的加熱處理與裝置，因此可避免高溫操作所引起的危險 及缺點，藉以提高使用安全性。 本創作的另一特點在於，遠紅外線熱輻射層具有熱輻射散熱 乍用了降低發光元件的操作溫度，亦即LED晶片的溫度，因而 能改善LED晶片的光衰及發光穩定度，藉以提升整體遠紅外線的 發射效率》 M353636 60燈罩 65奈米轴散熱蓋 67散熱孔 67A散熱孔 67B散熱孔 67C散熱孔 70接頭 R遠紅外線 R1熱輻射 R2遠紅外線The vibration will produce energy. When these energy is used as heat, it will warm the body's weaving, making blood I; slightly expanding, the blood flow rate is accelerated, and the effect of the coffee movement is achieved. When the water molecules are vibrated by far-infrared rays, the gas-oxygen-bonded chains will be compressed, stretched, and rotated. The __, _ between the water molecules of the original macromolecular group will be smaller. Water molecules, · 5 to 6 molecules, the so-called activated water. 77. The way in which far-infrared rays are generated in conventional techniques is generally the use of passive far-infrared radiation, such as carbon film printing, positive temperature coefficient heating (PTc) or chrome. However, the 'system technology is _ Chenghong riding the radiation to perform the butterfly, so that the thermal energy is converted into far infrared rays and emitted, so the radiation efficiency is very low, as far as the film printing (four) is the most expected, PTC phase = Cold C, so the application area and process are limited. In addition, Xi ptc Lin is in practice (10), and (4) hemp will cause safety ugly. Therefore, it is necessary to use - kind of profit, illuminating and far-infrared rays. No contact with water will occur. _ Dangerous shouting far infrared _ 曰 and solve the above-mentioned problem. (5) Sewing sugar structure, into M393636 .· 【New content】 • « * · ' The main purpose of this creation is to provide a kind of far infrared _ listening bubble structure, including luminous 7L piece 'ceramic substrate, far infrared radiation layer' circuit unit , the lamp housing, the production cover and the joint 'the far-infrared heat radiation layer and the hair unit are divided into the upper and lower surfaces of the board 2, the circuit unit is located in the joint and electrically connected to the light-emitting element and the joint, and the lamp cover surrounds the light-emitting element And the ceramic substrate, the lamp shell connecting joint to surround the k far infrared heat radiation layer, the joint system for connecting an external power source, and the connector is connected to the circuit unit by the first electric cable 11 connecting wire, thereby providing power, and the circuit The unit connects the light-recording elements by means of a second electrical connection to provide electrical signals or power required by the light-emitting elements. The far-infrared radiation layer radiates the heat generated by the light-emitting element to the outside of the lamp cover in a far-reaching manner, and at the same time reduces the operating temperature of the light-emitting element and improves the light-emitting stability of the light-emitting element to slow down the aging rate and extend the service life. , thereby improving the luminous efficiency and safety of far infrared rays. [Embodiment] The following is a more detailed explanation of the implementation method of the type and the element of the company, and the implementation of this specification. See the -®, a schematic diagram of the far-infrared porpoule. As shown in the first figure, the far-infrared light bulb structure of the first embodiment of the present invention includes a light-emitting element 10, a ceramic substrate 20, a far-infrared heat radiation layer 3, a circuit unit 4, a lamp housing, and a lamp cover 6〇. And a connector 7 〇 for emitting light by the illuminating element 1 , while emitting the far infrared ray R by the 遂 infrared heat radiation layer 30, mainly comprising a range between 4 and 4 (8), especially between 6 μηχ and 14 μηη. Light emitting element 10 can include a light emitting diode (LED) wafer. The ceramic substrate 20 has an upper surface and a lower surface, and the LED wafer 1 is formed on a sapphire substrate (not shown) and is bonded to the lower surface of the ceramic substrate 2A. 4 M393636, infrared heat H layer 3G is formed on the upper surface of the substrate 2 (four). The circuit unit 40 is located in the joint 7〇, and the lamp housing is connected to the joint 7 (4). The Chen far infrared heat radiation layer 30 〇 ' The lamp cover 60 covers the lower surface of the LED wafer 1 and the ceramic substrate. The connector 7 is connected to the circuit unit power supply by the Uit and the connector (four) - Wei connection line (shown in the figure) and connected to the circuit unit 4 (the UX provides power, and the unit * is connected by the second electrical connection line (not shown)) Connected to the LED wafer 10 to provide electrical signals or power required to drive or illuminate the LED wafer 1G. The far, outer line thermal radiation layer 3 includes a metal non-metallic composition including, for example, silver, copper, tin, sinter, titanium At least one of, iron and recorded, or alloys including at least one of silver, copper, tin, sulphur, titanium, iron and recorded, or at least silver, copper, tin, sau, chin, iron and recorded An oxide or a compound thereof, or an oxide or a nitride or a mineral acid compound including at least one of carbon and carbon. The lamp envelope 50 may be made of a ceramic material or propylene butadiene. ABS), which is suitable for applications with higher power and higher operating temperature, and can be applied to medium and low power and medium and low temperature fields. The lampshade can be made of translucent polycarbonate. Or glass. The far-infrared heat radiation layer 30 has a surface microstructure and can be heated by heat. Radiation mode transmits the heat generated by the LED chip 10 and the circuit unit 4 to the lower surface of the ceramic substrate 20 with far infrared rays, that is, the far far infrared ray r shown in the figure. Due to the far-infrared heat radiation layer 30 emitted far The infrared ray R contains a far-infrared spectrum, that is, a range of 5 μm to 18 μm, or preferably a range of 6 μm to 14 μm, and therefore, the far-infrared ceramic bulb structure of the first embodiment of the present invention can produce a desired far-infrared rays. It is that the joint 70 in the figure is represented by a spiral joint, such as Ε27, but is merely an illustrative example for illustrating the features of the present creation, and is not intended to limit the scope of the 5 ́s creation. Therefore, the joint 7G may include Other bulb connectors, such as (4), G4, G9, MR11 or ^^16, etc. · 'Looking at the second picture 'The second embodiment of this creation, the far-infrared ceramic bulb structure, 'Figure as shown in the first picture 'The second real off-infrared shunt bulb structure includes wafer 1 陶, ceramic plate 20, far infrared radiant heat radiation layer 32, circuit unit 4 〇, lamp housing 50, fresh 〇, 奈 崎 鲜 & and _ % The second embodiment of the rib is used to emit light ray while using the far-infrared heat radiation layer 32 to emit the far-infrared image--the second embodiment of the system--the second embodiment of the far-infrared heat The radiation layer 32 has the same features as the far-infrared radiation layer 30 of the first figure. The main difference between the second embodiment of the soil and the first embodiment is that the infrared-infrared heat radiation layer 32 of the second embodiment is formed on the lampshade 6 The upper surface of the crucible, that is, the upper middle surface. The other difference is that the lamp housing 5 is connected to the joint 7 (UX surrounds; ^ = the upper surface of the substrate 20. Therefore, the light emitted by the coffee wafer 1 () The second far-infrared heat radiating layer 32 on the lamp cover 60 can be heated while being conveyed toward the lamp cover 6 to further transmit the far-infrared light by using the far-infrared heat radiating layer 32 to transmit 'as in the second figure. Far infrared ray R is shown. At the same time, the second far red light-emitting layer 32 is translucent so that the emitted light of the coffee wafer (1) propagates downward, and has an illumination function when turned off. W through the other 're-differential point, placed 65 below the lamp housing 5G, and the nano glaze heat-dissipating cover 65 and the lamp (four) surround the pottery board 2G on the Nai Nai Lai cover 65 series from the silk series Correction axis ^ includes oxygen her 'nitriding Ming, oxidation error and _ _ _. The shaft cooling cover 65 has a plurality of heat dissipation holes 67, and the lamp housing has an opening corresponding to the = heat dissipation hole 67 for convection by air to enhance heat dissipation efficiency. In the figure, the rice glaze heat-dissipating cover 65 does not touch the ceramic fiber Μ _ axis, but this is not limited to this, but the nano glaze heat-dissipating cover 65 can also be connected. The shape of the heat dissipation hole 67 can be a straight f-shaped through hole as shown in the first figure. However, it should be noted that the straight tubular through hole of the second figure is merely an illustrative example for explaining the feature of the present invention, so that the 'heat dissipation hole 67 can be For other types, the third embodiment shows a heat dissipation hole 67A having a riding through hole, a loose hole having a bent hole, or a heat dissipation hole 67C having a straight tubular hole. Referring to the fourth figure, the schematic of the far infrared ray burst structure of the third embodiment of the present invention. As shown in the fourth ride, the far-infrared shunt bulb structure of the third embodiment includes an LED crystal; i Π), a ceramic record board 2G, a far-infrared hard-to-shoot layer%, a heat radiation dissipation layer 34, a circuit unit 40, and a lamp housing 50. , the lampshade 6 〇, the nano glaze heat sink cover & and the joint %, the far-infrared thermal radiant layer 32 emits the required far-infrared illusion, and the paste heat-dissipating heat-dissipating layer 34 generates a heat-light ri to enhance the heat dissipation efficiency. . The third embodiment of the fourth figure is similar to the second embodiment of the second figure, wherein the far-infrared heat radiation layer 32 of the fourth figure is identical to the far-infrared heat radiation layer 32' of the second figure and is fourth. The characteristics of the nano glaze heat-dissipating cap & of the figure are the same as the nano-axis absorptive 65 of the second figure. Therefore, the same Wei (four) will not be mentioned here. The main difference between the third embodiment of the fourth figure and the second embodiment of the second figure is that the 'thermal light-emitting heat dissipation layer 34 of the third embodiment is formed on the lower surface of the ceramic substrate 2' and the LED ¥ H) Department _ shouting the heat layer of the hot layer, which is the same as the second _ far infrared ray. The heat radiation is reduced to 34, and the heat generated by the ED ^ (4) is transmitted to the nano glaze heat-dissipating cover 65 ′ as shown in the figure. Referring to the fifth drawing, a schematic view of a thick outer-bubble structure of a fourth embodiment of the present invention. The far-infrared ceramic bubble structure of the fourth embodiment of the present invention comprises a light-emitting element 10, a ceramic substrate 20, a far-infrared heat radiation layer 3, a circuit unit 4, a lamp housing 5, a lamp cover 60 and a joint 70 for emitting light. The element 1 〇 emits light while using the far-infrared heat radiation layer 3G. The far-infrared ray R is emitted, mainly including a range between 4 and 4 (8), in particular, a range between 6 μm to 14 μτη. The fourth real relationship of the fifth figure is similar to the first-off embodiment, and the main difference between the fourth embodiment of the fifth figure and the first embodiment of the first figure is that the far-infrared heat radiation layer 3G is It is disposed below the ceramic board 2G and above the light-emitting element W, and directly transfers the heat generated by the circuit unit 4〇 downward by the far-infrared rays, that is, the far-infrared rays R in the figure. Referring to a sixth drawing, a schematic view of a structure of a far infrared ray ceramic bulb according to a fifth embodiment of the present invention. The far-infrared ceramic bulb structure of the fifth embodiment of the present invention includes a light-emitting element 10, a ceramic substrate 20, a first heat radiation layer 36, a second heat radiation layer 38, a circuit unit 4, a lamp housing 50, a lamp cover 60, and a joint 70. The light source 1 〇 emits light while the infrared ray radiating layer 3 〇 emits far infrared ray r, mainly including a range between 4 and 400 μm, especially between 6 μm and 14 jjm. The fifth embodiment of the sixth embodiment is similar to the combination of the first embodiment of the first figure and the fourth embodiment of the fifth figure. The main difference is that the first-de-shot layer 36 is disposed above the ceramic substrate 20. The second heat radiation layer 38 is disposed below the ceramic substrate 2〇 and on the upper surface of the light-emitting element 10, and the heat of the circuit unit 4Q is radiated downward by the far-infrared rays, that is, the downward far-infrared rays R in the figure. The main feature of this creation is that the far-infrared heat radiation layer absorbs the heat of the light-emitting element and the circuit unit to generate far-infrared rays, and operates at a normal temperature without additional heat treatment and equipment, thereby avoiding the high temperature operation. The dangers and shortcomings are used to improve the safety of use. Another feature of the present invention is that the far-infrared heat radiation layer has heat radiation heat dissipation, which reduces the operating temperature of the light-emitting element, that is, the temperature of the LED chip, thereby improving the light decay and the light-emitting stability of the LED wafer, thereby improving the overall Far-infrared emission efficiency" M353636 60 lampshade 65 nanometer shaft cooling cover 67 cooling hole 67A cooling hole 67B cooling hole 67C cooling hole 70 connector R far infrared R1 heat radiation R2 far infrared