TW201140656A - Gas discharge unit, manufacturing method for the same, and substrate processing apparatus having the same - Google Patents

Gas discharge unit, manufacturing method for the same, and substrate processing apparatus having the same Download PDF

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Publication number
TW201140656A
TW201140656A TW100116065A TW100116065A TW201140656A TW 201140656 A TW201140656 A TW 201140656A TW 100116065 A TW100116065 A TW 100116065A TW 100116065 A TW100116065 A TW 100116065A TW 201140656 A TW201140656 A TW 201140656A
Authority
TW
Taiwan
Prior art keywords
gas
reflection
processing apparatus
substrate processing
substrate
Prior art date
Application number
TW100116065A
Other languages
English (en)
Chinese (zh)
Inventor
Sun-Hong Choi
Sung-Rok Bae
Seung-Ho Lee
Tae-Wan Lee
Ho-Chul Lee
Original Assignee
Jusung Eng Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jusung Eng Co Ltd filed Critical Jusung Eng Co Ltd
Publication of TW201140656A publication Critical patent/TW201140656A/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
TW100116065A 2010-05-06 2011-05-06 Gas discharge unit, manufacturing method for the same, and substrate processing apparatus having the same TW201140656A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020100042686A KR20110123187A (ko) 2010-05-06 2010-05-06 가스 토출 유닛, 그 제조방법 및 이를 포함하는 기판 처리 장치

Publications (1)

Publication Number Publication Date
TW201140656A true TW201140656A (en) 2011-11-16

Family

ID=44904194

Family Applications (1)

Application Number Title Priority Date Filing Date
TW100116065A TW201140656A (en) 2010-05-06 2011-05-06 Gas discharge unit, manufacturing method for the same, and substrate processing apparatus having the same

Country Status (3)

Country Link
KR (1) KR20110123187A (ko)
TW (1) TW201140656A (ko)
WO (1) WO2011139039A2 (ko)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105839074A (zh) * 2015-02-03 2016-08-10 Lg电子株式会社 用于太阳能电池的金属有机化学气相沉积设备

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100375985B1 (ko) * 2000-08-17 2003-03-15 삼성전자주식회사 반사부를 구비하는 박막 형성 장치
KR100502420B1 (ko) * 2003-05-29 2005-07-20 삼성전자주식회사 반도체 소자 제조에 사용되는 증착 장치
KR101324211B1 (ko) * 2006-05-29 2013-11-06 주성엔지니어링(주) 기판 처리 장치

Also Published As

Publication number Publication date
WO2011139039A2 (en) 2011-11-10
WO2011139039A3 (en) 2012-01-26
KR20110123187A (ko) 2011-11-14

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