201135837 六、發明說明： 【發明所屬之技術領域】 本發明係有關於一種用於基板處理設備之氣體供應構 造’其在腔室内產生電漿以處理基板表面。 【先前技術】 如習知技藝人士所熟知者，製造電子元件，例如大型 積體（LSI)電路或平面顯示器（fpds)，通常會經歷例如基 板的真空處理之處理。 在真空處理方法中’氣體係供應至腔室内，而電漿係 利用高壓放電來產生《電漿微粒的加速力實質上將物質 賤鑛至基板上。基板上的物質藉由電漿的自由基化學分 解。 利用電漿處理基板的技術根據形成電漿的方法被歸類 為PE(電漿姓刻）技術、rie(反應性離子触刻）技術、 MERIE(磁場強化反應性離子蝕刻）技術、ECR(電子迴旋 加速共振）技術、TCP(變壓耦合電漿）技術、ICP(感應耦 合電漿）技術等。 明確地說，形成高密度電漿並增強玻璃（或半導體）基 板上的電漿密度均勻性大大影響沈積或蝕刻效能。為達 到這些目的’研發出多種產生電漿的方法。ICP(感應耦 合電漿）法是該等電漿產生方法之代表範例。 ICP法是一種產生高密度電漿的方法，其根據在線圈 201135837 纏繞於介電質後而使電場改變時，會在線圈内部產生感 應磁場，並藉以在反應室内形成第二感應電流之原理。 叙而§，運用ICP法的基板處理設備包含下電極， 其係裝配在反應室下半部。基板放置在下電極上。該設 備更包含天線，其裝配在腔室内或在與腔室外罩連結的 上蓋框架上。施加RF功率至天線。藉由供應反應性氣體 至腔室内並產生電漿來處理基板表面。 就注射製程氣體至基板處理設備之腔室内的構造而 言’其具備直接注射構造及喷頭構造。 根據注射製程氣體至腔室内的構造，電漿密度均勻性 與基板沈積或蝕刻的效能會大幅度改變。因此，需要一 種適合基板處理設備大型化趨勢之改善的氣體注射構 造0 應了解前面習知技術係本發明之發明人在演繹本發明 前即知曉或在演繹本發明的過程期間取得的資訊，並且 當然不意味著習知技術的構造在申請日前即已知。 【發明内容】 據此’本發明係在考量上述先前技藝所發生的問題下 產生，並且本發明之—目的係在於提供一種用於基板處 理設備之氣體供應構造，其中喷頭以矩形配置方式設 置，因此製程氣體可均勻注入腔室中，從而改善所形成 電聚的密度之均勻性，並強化沈積或蝕刻效能。 201135837 為實現上述目的，尤 At , 1曰的在一態樣中，本發明提供一種基板 處理《又備之乳體供應構造，包含：上蓋框架，其具有形 成一多角框架構造的周邊之外框架，以及裝配在該外框 架内σρ之刀割框架’該分割框架將該外框架的内部空間 劃刀為中央窗與圍繞該中央窗形成的周邊窗；以及喷 頭，其以多角配置方式裝配在該分割框架之下表面下 方，該噴頭將製程氣體注入腔室内。 嗔頭可具有朝向水平方向的注射表面。氣體注射孔可 穿透該注射表面而形成。該等氣體注射孔可朝向垂直方 向。 喷頭可包含注射表面，其具有圓形形狀。氣體注射孔 可穿透注射表面而形成。氣體注射孔可以放射狀構造設 置。 喷頭可具有第-注射表面形成在該分割框架的下表面 下方、及第一’主射表面形成在該分割框架此鄰該中央 窗的一侧上。 上蓋框架的外框架可具有矩形框架構造，並且喷頭可 以矩形設置裝配。 分割框架可具有钜形形狀以形成中央窗，而進氣管可 與矩形分割框架的各個角連結，使製程氣體可透過形成 在分割框架内的流動通道從進氣管供應至喷頭。 在另一態樣中，本發明提供一種基板處理設備之氣體 供應構造，包含：噴頭，其注射製程氣體至腔室内，該 喷頭包含注射表面，其具有圓形形狀。氣體注射孔穿透 5 201135837 注射表面而形成。氣體注射孔可以放射狀構造設置。 可從如下詳細描述連同附圖更清楚了解上述本發明之 關鍵技術解決方案’且會提出並解釋根據本發明之其它 各種技術解決方案。 【實施方式】 以下’將參考附圖詳細描述本發明之較佳實施例。 現在開始會參考該等圖式，其中在不同圖式中使用同 樣的元件符號來表示相同或類似的元件。 第1圖係顯示根據本發明之基板處理設備之結構的概 要剖面圖。 根據本發明之基板處理設備包含腔室外罩11、基板支 擔台15、下電極17、上蓋框架2〇、複數個窗3〇、天線 40、RF電源供應器5〇及製程氣體供應單元6〇。基板支 樓台15及下電極17裝配在腔室外罩^内，且基板δ安 置在基板支撐台15及下電極17上。上蓋框架20與腔室 外罩11的頂端連結。窗30裝配在上蓋框架20内。天線 40與RF電源供應器5〇設置在窗3〇上。製程氣體供應 單元60供應製程氣體至腔室10内，而腔室10由腔室外 罩11與上蓋框架2〇界定。 以下將更詳細描述根據本發明之基板處理設備的特徵 零組件。 首先’將參考第2及3圖描述上蓋框架20。 201135837 上蓋框架20具有矩形框架構造。上蓋框架2〇内部分 割為五個部分，並且分別由各該五個部分界定出五個窗 30 〇 為形成此構造，上盍框架2〇包含外框架21，其形成 矩形框架構造的周邊，以及分割框架25，其裝配在外框 架内部且彼此連結’因此外框架21内部係經分割為五個 部分’以形成五個窗30。 形成在上蓋框架20内的五個窗3〇包含中央窗3〇a， 其安置在上蓋框架20的中央部分’以及四個周邊窗 3〇B ’其係設置在中央窗3〇a周圍。 中央窗30A與周邊窗30B具有矩形形狀。在此實施例 中，如在圖式中所示者’四個周邊窗3〇B以順時針方向 圍繞中央窗3GA設置。當^，四個周邊窗則能夠以反 時針方向圍繞中央窗3 0A設置。 在周邊窗30B具有矩形形狀的情況中，每一個周邊窗 30B均包含第—側a、第二側b、第三侧^與第四側d。 第一側a分隔周.邊窗3〇B和中央窗3〇A以及順時針方向BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a gas supply structure for a substrate processing apparatus which produces plasma in a chamber to treat a substrate surface. [Prior Art] As is well known to those skilled in the art, the manufacture of electronic components, such as large integrated circuit (LSI) circuits or flat panel displays (fpds), typically undergoes processing such as vacuum processing of the substrate. In the vacuum processing method, the gas system is supplied into the chamber, and the plasma system uses high-voltage discharge to generate the "acceleration force of the plasma particles to substantially smear the material onto the substrate. The material on the substrate is chemically decomposed by free radicals of the plasma. The technique of treating a substrate by plasma is classified into a PE (plasma surname) technique, a rie (reactive ion etch) technique, a MERIE (magnetic field enhanced reactive ion etch) technique, and an ECR (electron) according to a method of forming a plasma. Cyclotron acceleration resonance technology, TCP (variable pressure coupled plasma) technology, ICP (inductively coupled plasma) technology, etc. In particular, the formation of high density plasma and enhanced plasma density uniformity across the glass (or semiconductor) substrate greatly affects deposition or etching performance. In order to achieve these goals, a variety of methods for generating plasma have been developed. The ICP (Inductively Coupled Plasma) method is a representative example of such plasma generation methods. The ICP method is a method of producing a high-density plasma which generates an induced magnetic field inside the coil and a second induced current in the reaction chamber according to the fact that the electric field is changed after the coil 201135837 is wound around the dielectric. As a matter of §, the substrate processing apparatus using the ICP method includes a lower electrode which is assembled in the lower half of the reaction chamber. The substrate is placed on the lower electrode. The device further includes an antenna that fits within the chamber or on the upper cover frame that is coupled to the outer cover of the chamber. Apply RF power to the antenna. The substrate surface is treated by supplying a reactive gas into the chamber and generating a plasma. With respect to the configuration in which the process gas is injected into the chamber of the substrate processing apparatus, it has a direct injection structure and a nozzle structure. Depending on the configuration of the injection process gas into the chamber, the uniformity of plasma density and the effectiveness of substrate deposition or etching can vary significantly. Therefore, there is a need for a gas injection structure suitable for the improvement of the tendency of the substrate processing apparatus to be enlarged. It is to be understood that the prior art is the information obtained by the inventors of the present invention prior to the interpretation of the present invention or during the process of the present invention, and Of course, this does not mean that the construction of the prior art is known before the filing date. SUMMARY OF THE INVENTION Accordingly, the present invention has been made in view of the problems occurring in the prior art described above, and the present invention is directed to providing a gas supply configuration for a substrate processing apparatus in which the heads are arranged in a rectangular configuration Therefore, the process gas can be uniformly injected into the chamber, thereby improving the uniformity of the density of the formed electropolymer and enhancing the deposition or etching efficiency. 201135837 In order to achieve the above object, in one aspect of the At, 1 曰, the present invention provides a substrate processing "further breast supply structure comprising: an upper cover frame having a periphery forming a polygonal frame structure a frame, and a knife cutting frame assembled in the outer frame, the dividing frame dicing the inner space of the outer frame into a central window and a peripheral window formed around the central window; and a showerhead assembled in a polygonal configuration Below the lower surface of the split frame, the showerhead injects process gas into the chamber. The hoe can have an injection surface that faces in the horizontal direction. A gas injection hole can be formed through the injection surface. The gas injection holes can be oriented in a vertical direction. The showerhead can include an injection surface that has a circular shape. The gas injection hole can be formed by penetrating the injection surface. The gas injection holes can be arranged in a radial configuration. The showerhead may have a first injection surface formed below the lower surface of the split frame and a first ' major projection surface formed on a side of the split frame adjacent the central window. The outer frame of the upper cover frame may have a rectangular frame configuration, and the spray heads may be assembled in a rectangular arrangement. The split frame may have a dome shape to form a center window, and the intake duct may be coupled to each corner of the rectangular split frame to allow process gas to be supplied from the intake pipe to the shower head through a flow passage formed in the split frame. In another aspect, the present invention provides a gas supply configuration of a substrate processing apparatus, comprising: a showerhead that injects a process gas into a chamber, the showerhead comprising an injection surface having a circular shape. Gas injection hole penetration 5 201135837 injection surface formed. The gas injection holes can be arranged in a radial configuration. The above-described key technical solutions of the present invention will be more clearly understood from the following detailed description together with the accompanying drawings, and various other technical solutions according to the present invention will be presented and explained. [Embodiment] Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. Reference will now be made to the drawings, in which the same reference Fig. 1 is a schematic cross-sectional view showing the structure of a substrate processing apparatus according to the present invention. The substrate processing apparatus according to the present invention includes a chamber cover 11, a substrate support 15, a lower electrode 17, an upper cover frame 2, a plurality of windows 3, an antenna 40, an RF power supply 5, and a process gas supply unit 6 . The substrate support 15 and the lower electrode 17 are mounted in the chamber cover, and the substrate δ is placed on the substrate support 15 and the lower electrode 17. The upper cover frame 20 is coupled to the top end of the chamber cover 11. The window 30 is fitted within the upper cover frame 20. The antenna 40 and the RF power supply 5 are disposed on the window 3. The process gas supply unit 60 supplies process gas into the chamber 10, and the chamber 10 is defined by the chamber outer cover 11 and the upper cover frame 2''. The features of the substrate processing apparatus according to the present invention will be described in more detail below. First, the upper cover frame 20 will be described with reference to Figs. 2 and 3. 201135837 The upper cover frame 20 has a rectangular frame configuration. The upper cover frame 2〇 is internally divided into five parts, and five windows 30 are defined by each of the five parts, respectively. The upper frame 2〇 includes an outer frame 21 which forms a periphery of the rectangular frame structure, and The split frame 25 is fitted inside the outer frame and joined to each other 'so the inner frame 21 is internally divided into five parts' to form five windows 30. The five windows 3'' formed in the upper cover frame 20 include a center window 3a, which is disposed at a central portion' of the upper cover frame 20, and four peripheral windows 3''' are disposed around the center window 3''. The center window 30A and the peripheral window 30B have a rectangular shape. In this embodiment, as shown in the drawings, the four peripheral windows 3B are disposed in a clockwise direction around the center window 3GA. When ^, the four peripheral windows can be placed around the center window 30A in a counterclockwise direction. In the case where the peripheral window 30B has a rectangular shape, each of the peripheral windows 30B includes a first side a, a second side b, a third side ^ and a fourth side d. The first side a separates the circumference. The side window 3〇B and the center window 3〇A and the clockwise direction
上的下-個毗鄰的周邊窗通。第二側b分隔周邊窗30B 和順時針方向上位於其後方的另—晚鄰的周邊窗MB。 第三側e與第—側a相對並與上蓋框架Μ的周邊表面接 壌》第四側d與第二側b相對並與上蓋框架2〇的周邊表 面接壤。 理想上，每-個周邊窗鳩的第一側&與中央窗似 的對應側及設置在其前方之周邊窗现的第二側b，兩者 201135837 3〇A以順時針方 接壌，而使所有周邊窗3 0B圍繞中央窗 向連續設置。 此外，每一個周邊窗綱的第—側&與第二側 對應的分割框架25形成，而其第三側。與第四側d倍 該外框架21形成。 ’、由 如此，每-個周邊窗則與中央窗3〇A的四個側邊之 相對應者接壤’並且四個料窗3〇B幻俱時針或反時針 方向圍繞中央窗30A設置。因此，基本上，周邊窗地 形成規則的安排。 由例如陶竞之材料製成的絕緣板31拔入以上述配置 形成的中央窗30A和周邊窗地内m緣板支擇件 22均具有階梯狀構造，其形成在外框冑21 &内表:及 等分割框架25兩側上’因此每—個絕緣板3ι的周邊係 由相對應的絕緣板支撐件22支揮著。 此外’托座23及26安裳在外框架21及分割框架25 上，以避免絕緣板3 1不預期地與窗3〇分離。如圖所示， 裝配在外框架21上的每一個托座23具有L形剖面，而 裝配在分割框架25上的每一個托座26具有u形剖面。 U形托座26可支撐裝配在單一個分割框架之相反側上 的兩個絕緣板3 1。 托座23與26可藉由固接件等固接至上蓋框架2〇。 此外，可在必要時以各種方式調整每一個托座Μ、％ 的形狀及構造^ 參見第3圖，加熱流體通道24a形成在上蓋框架加的 201135837 外框架2 1内，因此加熱上蓋框架的流體可沿著加熱流體 通道24a流動。此外，進及出連接頭2仆可裝配在外框 架21的預疋部分上，因此加熱流體通道24a可利用接頭 24b連結至外部加熱流體供應管線。 此外，天線穿越凹槽27形成在上蓋框架2〇的分割框 架25内，以在分割框架25内形成空間，而使將在本文 中詳細解釋的周邊天線45可穿過分割框架25。換言之， 如第2圖所示，天線穿越凹槽27形成在將周邊窗3〇b彼 此分隔的分割框架25内。 在第3圖中，元件符號28表示天線固接支架，其安裝 在每一個天線穿越凹槽27内以將天線固接至對應的分 割框架25。兀件符號29表示天線托座，其覆蓋每一個 天線固接支架28以避免周邊天# 45 &其安裝位置移 開。較佳地，天線托座29也有U形刮面。更佳地，天線 托座29經配置得使其也可發揮抓持對應絕緣板31的作 用。 同時，雖然上蓋枢架20經圖解為具有矩形框架構造， 但本發明並不受限於此。例如，±蓋框帛2()彳具有五角 形或六角形框架構造’而其構造可在必要時以各種方式 調整。 現參考第3及4圖描述裝配具上述構造的上蓋框架2〇 之基板處理設備的天線4〇之配置。 參^第3圖，兩個中央天線41安裝在上蓋框架⑽ 央固30A上。四個周邊天線45安裝在四個周邊窗则 201135837 上0 4〇 ’其經置入上蓋框 央窗30A的中央在中 兩個中央天線41包含兩個天線 架中央上’並以順時針方向圍繞中 央窗30A上延伸。 四個周邊天線45經配署媒你 、！配罝得使母一個天線被置入對應The upper one is adjacent to the adjacent perimeter window. The second side b separates the peripheral window 30B and the other neighboring peripheral window MB located rearward in the clockwise direction. The third side e is opposed to the first side a and is in contact with the peripheral surface of the upper cover frame 壌. The fourth side d is opposed to the second side b and borders the peripheral surface of the upper cover frame 2〇. Ideally, the first side of each of the peripheral window sills and the corresponding side of the central window and the second side b of the peripheral window disposed in front of the front window, both 201135837 3〇A are connected clockwise. All peripheral windows 30B are continuously disposed around the central window. Further, the first side of each of the peripheral window frames is formed with the divided frame 25 corresponding to the second side, and the third side thereof. The outer frame 21 is formed by d times the fourth side. Thus, each of the peripheral windows borders the four sides of the center window 3A and the four windows 3B are disposed around the center window 30A in a clockwise or counterclockwise direction. Therefore, basically, the peripheral window forms a regular arrangement. The insulating plate 31 made of, for example, Tao Jing's material is pulled into the central window 30A formed in the above configuration and the peripheral edge m-plate supporting member 22 has a stepped configuration, which is formed in the outer frame 胄 21 & And on both sides of the equally divided frame 25 'so the periphery of each of the insulating sheets 3 1 is supported by the corresponding insulating plate support 22 . Further, the brackets 23 and 26 are mounted on the outer frame 21 and the split frame 25 to prevent the insulating plate 31 from being unintentionally separated from the window 3. As shown, each of the brackets 23 fitted to the outer frame 21 has an L-shaped cross section, and each of the brackets 26 fitted to the split frame 25 has a u-shaped cross section. The U-shaped bracket 26 can support two insulating plates 31 assembled on opposite sides of a single split frame. The brackets 23 and 26 can be fixed to the upper cover frame 2 by a fixing member or the like. Further, the shape and configuration of each of the brackets %, % can be adjusted in various ways as necessary. Referring to Fig. 3, the heating fluid passage 24a is formed in the outer frame 21 of the upper cover frame plus 201135837, thereby heating the fluid of the upper cover frame. It can flow along the heating fluid passage 24a. Further, the inlet and outlet connector 2 can be mounted on the pre-twist portion of the outer frame 21, so that the heating fluid passage 24a can be coupled to the external heating fluid supply line by the joint 24b. Further, an antenna crossing groove 27 is formed in the divided frame 25 of the upper cover frame 2 to form a space in the split frame 25, so that the peripheral antenna 45, which will be explained in detail herein, can pass through the split frame 25. In other words, as shown in Fig. 2, the antenna crossing groove 27 is formed in the split frame 25 which partitions the peripheral windows 3〇b from each other. In Fig. 3, reference numeral 28 denotes an antenna fixing bracket which is installed in each of the antenna crossing grooves 27 to fix the antenna to the corresponding dividing frame 25. The symbol 29 indicates an antenna holder that covers each of the antenna fixing brackets 28 to prevent the peripheral position from being removed. Preferably, the antenna holder 29 also has a U-shaped scraping surface. More preferably, the antenna holder 29 is configured such that it also functions to grip the corresponding insulating plate 31. Meanwhile, although the upper cover pivot 20 is illustrated as having a rectangular frame configuration, the present invention is not limited thereto. For example, the ± cover frame 帛 2 () 彳 has a pentagonal or hexagonal frame configuration ' and its configuration can be adjusted in various ways as necessary. The arrangement of the antenna 4A of the substrate processing apparatus equipped with the upper cover frame 2 of the above configuration will now be described with reference to Figs. Referring to Fig. 3, two center antennas 41 are mounted on the upper cover frame (10) central solid 30A. The four peripheral antennas 45 are mounted on the four peripheral windows on the 201135837. The four central antennas are placed in the center of the upper cover frame central window 30A. The two central antennas 41 contain the center of the two antenna frames' and are surrounded by a clockwise direction. The central window 30A extends. Four peripheral antennas 45 are equipped with you,! Matching so that one antenna is placed in the corresponding
的周邊窗30B之一去I*，* ,、，，IS 有上並以順時針方向連續通過另三 個周邊f娜。例如，參見第3圖，第-周邊天線451 乂順時針方向從第一周邊窗3〇1通過第二周邊窗3⑽及 第三周邊f 303延伸至第四周邊窗3〇4。第二周邊天線 452以順時針方向從第二周邊窗3〇2通過第三周邊窗3〇3 及第四周邊窗304延伸至第一周邊窗3〇丨。第二周邊天 線452的起始端設於第一周邊天線45丨内側。第三周邊 天線453及第四周邊天線454以與第一周邊天線45丨及 第二周邊天線452相同的方式設置。因此，基本上，四 個周邊天線45以螺旋形態規則安排，同時以一致的間隙 彼此隔開。 在圖式中，元件符號401表示其上置入中央天線41或 每一個周邊天線45的部分。元件符號405表示端點支撐 件’其設置在中央天線41或每一個周邊天線4 5延伸所 達處’因此對應的天線40可利用該端點支撐件與接地部 分連結。 較佳地，在每一個天線固接支架28内形成三個天線嵌 入孔28a，因此通過對應分割框架25的三個周邊天線45 嵌入各自的天線嵌入孔28a中。天線托座（29 ;參見第2 10 201135837 圖）與天線固接支帛28的上半部分連結，因成匕周邊天線 45可穩定地固接至天線固接支架28。 在提供具有上述設置的上蓋框架2〇和天線4〇之本發 明中，腔室中電漿的產生方向與周邊窗和天線圍繞上蓋 框架的中央窗之配置的構造有緊密關聯。因此，在基板 處理操作期間，不僅可在腔室的中央部分上形成，也可 在腔至的邊緣部分上形成密度均勻的電漿。此外，渦流 在分割框架25周圍產生，因而可進一步平均分配電漿。 因此，由於上蓋框架20與天線4〇的上述配置，可顯著 改善處理效能。 第4圖係顯示配置天線之構造的另一實施例之平面 圖0 第4圖所示之天線4〇’包含中央天線41，及周邊天線 45’’其朝向與第3圖之實施例之中央天線41及周邊天 線45所朝方向相反的方向。 四個周邊天線45，的每一個均包含兩個分支天線45&， 其係從單一條引線分出。因此，四對周邊天線45,以螺旋 形態設置在四個周邊窗3〇B上。 接下來，將參考第5至1〇圖解釋供應並注射製程氣體 至裝配具上述構造的上蓋框架2〇之基板處理設備内的 構造。 在一實施例中，喷頭（61;參見第7圖）係裝配在部分 分割框架25(將中央窗30A界定在其内）上，以使製程氣 體從喷頭61注入腔室内。換句話說，中央窗3〇A具有矩 201135837 形構&巾可將製程氣體注入腔室之喷頭“裝配在形成 中央窗30A的四邊之各個分割框架25上。 第7圖係顯不該上蓋框架2〇的中央部分之倒轉透視 圖。將參考此圖描述喷頭61的構造。 /配在形成中央窗30A的四邊的對應分割框架25上之 每個喷頭61包含複數個以規則形態設置的注射孔 62a。在第7圖之實施例中，嘴頭61經配置得使製程氣 體分別從中央窗3GA的四個邊而非中央窗观的角落注 入該腔室中。 較佳地，每一個喷頭61均具有凹槽（63;參見第6圖）， 其形成在分割框架25的下表面中，而使製程氣體通過凹 槽63 ;以及喷頭平板62 ’其具有注射孔62a在其中並且 在凹槽63外部與分割框架25連結。 第8至1〇圖係顯示裝配噴頭平板62的分割框架乃之 剖面圖。將參考料圖式_噴頭61之注射構造的若干 實施例。 喷頭6i的注射構造包含注射表面㈣，其形成在分割 框架25的下表面上。如第8圖所示，注射表面㈣係朝 向水平方向，而注射孔62a係朝向垂直方向。 此外，如第9圖所示，注射表面62b，可具有半圓形或 +橢圓形弧狀，並且注射孔62a，可以放射狀向外伸展的 形態形成在弧形注射表面62b，内。弧形注射表面Mb，以 及徑向注射孔62a，形成簡單構造，其可有效地平均分散 襲程氣體至腔室内，因此強化基板處理操作的效率。 12 201135837 或者，如第10圖所示，可不僅在分割框架25的下表 面上，並且也在分割框架25的一侧上形成注射表面 62b’’，並可穿透下表面及分割框架25的對應側兩者形成 注射孔62a”。在此情況中，側面注射孔62a，，較佳地係 經配置使得從側邊注射孔62a’，排出的製程氣體注入中 央窗3 0 A内。 現將參考包含第5及6圖的相關圖式，描述供應製程 氣體至可貫施為具上述構造的若干實施例之喷頭61的 構造。 可以各種方式實施製程氣體供應構造。在一實施例 中’進氣口（64 ;參見第6圖）形成在分割框架25中毗鄰 中央窗30A的四個角之位置上。進氣管65垂直連結至具 有進氣口 64的分割框架25之上表面。 製程氣體供應構造可經配置，使得透過每一個進氣管 65供應的氣體基於中央窗30A的對應角而僅以—個方向 或以兩個方向沿著形成在對應分割框架25内的流動通 道流動。在製程氣體供應構造經配置得使氣體雙向流動 的情況中，可在中央窗30A的對應側内形成流動通道之 每一個凹槽63的中間部分提供阻擋牆。 由於進氣管65裝配在中央窗3〇A的四個角周圍，可在 不妨礙抓持絕緣板3 1的托座26或29的情況下形成製程 氣體供應構造。 元件符號65a和65b表示進氣管65的凸緣。上凸緣 65a固接至裝配於腔室上方的上部覆蓋構造，而下凸緣 13 201135837 65b固接至上蓋框架2〇。 在本實施例中’四個進惫 m a ^ 、s65裝配在中央窗30A周 圍8參見第5圖，用來供庫 應礼體至四個進氣管65的單一 個氧體供應管66a分兮土、& ^ 刀岔成兩個第一供應管66b。每一個 第一供應管66b分岔点盘；v ^ ^ 贫成為兩個第二供應管66c。第二供 應官66c連接至對應的進氣管65。 同時，雖然所顯示的喑 碩1為矩形配置，但本發明並 不受限於此。取決於卜笔 調整…,： 0的構造，可以各種方式 。 、配置，例如’其可有八角形或六角形配置。 Λ敍者冑參考第1 1至14圖描述冷卻天線40的構造及 加熱絕緣板3 1的構造。 加熱絕緣板31的構造包含加熱管71，其排放加熱空 氣至絕緣板3 1上。 加熱管71經設計以形成適於均句加熱絕緣板Η的配 在必要時，可妥善調整加熱管71的配置，只要其可 均勻加熱絕緣板3丨即可。 而 隹圖式之實施例中，在每個周 窗30Β上裝配兩條加熱管線。設置在中央窗观内的 絕緣板3 1係由從周邊窗 私比 門遠® 3〇B延伸出之加熱管線加熱。加 :營線包含加熱管71，其以水平方向設置在窗上，並具 有朝向窗的排放孔。 π田然’加熱管71可以低於或高於配置在窗上的天線而 設置，以避免在其間產生干擾。 如第η圖所示’加熱管線71a可連接在加熱管71之 間。在此情況中’每一條加熱管、線71a包含直徑小於加 14 201135837 熱管71者的管子。或者，可能沒有加熱管線71a。 如此’由於本發明設備配備有可加熱絕緣板3 1的加熱 ^ 1 故了減少高分子聚合物在腔室10内之絕緣板 上的沈積。 可利用多種構造來實施供應加熱空氣至加熱管71内 的方法例如，藉由在其上連接加熱空氣供應管線。在 本實施例中’使用滿流產生器73。猶後將參考第12圖 於本文做解釋。 如第14圖所示，在冷卻天線4〇的構造中每一個天 線（40，4 1、45)均具有中空管狀，並且冷卻流體流經管 狀天線40，因而冷卻天線4〇。 在實施例中，冷卻路徑可經配置得使冷卻流體經由天 線40的起始端通入天線4〇，然後由其尾端從天線排 出。沿著天線40流動的冷卻流體路線之結構可利用熟知 技術實施，因此省略進一步的解釋。 在本發月之貫施例中，加熱板的加熱及天線的冷卻 可利用渦流產生器73 —同實施。這將會詳細解釋。 渦流產生器73為能量分離元件，其利用環管（circular tube)及具簡單構造的喷嘴將壓縮空氣分為低溫^氣和高 溫空氣，而不使用任何化學作用或燃燒作用。如第12圖 所示，壓縮空氣經由供應管供應至渦流管74内。然後， 供應至渦流管74内的壓縮空氣首先進入渦流旋轉室75 並以超间速旋轉。旋轉空氣朝加熱空氣出口行進。在此 同時，當次渦流通過位於主渦流内部之較低壓區域時， 15 201135837 次渦流損失熱並朝冷卻空氣出口行進。在這兩種空氣流 中’由於内側空氣流之空氣微粒旋轉一次所需時間與外 侧空氣流之空氣微粒相同，因此内側空氣流的移動速度 低於外側空氣流。此移動速度的差異意味著動能的降 低。喪失的動能轉換成熱因而增加外側空氣流的溫度， 而内側空氣流的溫度則進一步降低。 加熱官7 1與天線40的冷卻路徑分別與渦流產生器73 的兩端連接。如此，同時加熱絕緣板3丨並冷卻天線4〇 的構造可利用此一簡單構造實施。 同時，雖然所示之渦流產生器用做提供加熱空氣與冷 卻空氣的設施，但該設施並不限於渦流產生器。可使用 具備其他構造的冷卻器，且可分開提供供應加熱空氣的 設施與供應冷卻空氣的設施。 接下來將參考第15至19圖描述基板處理設備的能 損降低構造’其可最小化腔室内表面關的能量損失並 確保電漿均勻性。 如第15及16圖所示’内襯保護器81安裝在腔室1〇 《腔室壁内表面上。每一個内襯保護器81與腔室的對應 角落和對應腔室壁緊密接觸。 第15圖顯示内襯保護器81，其裝配在上蓋框架⑼之 外框架的内表面上(第1圖的W部分上)，並且每一者皆 從上蓋框架20的對應角落朝外框架的兩個桃鄰内表面 延伸。 第16圖顯示當未在上蓋框架2〇内部裝配分割框架 16 201135837 (25，參見第2jg|楚、 圖等）時’或疋内襯保護器81設置在腔室 1 0的外罩内而非 升°又置在上蓋框架20周圍的情況下，内 觀保s蒦|§ 8 1的忠 、 J文装。母一個内襯保護器82屬於又稱為 内襯或保護器的生 .., 的4件。内襯保護器82包含：角落保護器 每者白具備”L”形並且安裝在腔室1〇的對應角落 、及腔至壁保護器83，每一者皆具備平坦形狀並且 安裝在腔室1〇的對應腔室壁上。 内襯保護器81可藉由陽極處理銘板表面來形成。 ―卜在第16圖的實施例中，僅有内襯保護器81的 π '、蒦器82可藉由電鍍鋁板表面來形成。在此情況 中’腔至壁保護器83可由陶瓷塗覆板製成。 在貫施例中，組裝在一起的每一個角落保護器Μ之邊 緣與眺鄰腔室壁保罐5| 6 主空保濩器83之對應邊緣具有彼此嚙合的 階梯構造’因此角落保護器82與腔室壁保護器Μ在腔 室壁上其間的接合處同平面。 如第17圖之「c,·^公裕；— .. 」〇P刀所不’母一個角落保護器82 可在其内角上具有相對於腔室壁傾斜的表面。 在根據本發明之能損降低構造中，穿透腔室壁的每一 個角在對應的角落保護器82後方形成孔12。電容器Μ 可安裝在孔12内，並與對應的角落保護器“電氣連接。 電容器85與外部電路連接或接地。 如第15至17圖所示，單一電容器85可穿透腔室ι〇 的腔室壁之角落嵌入並與角落保護器82的後表面連 接。在此情況中，其内嵌入電容器85的孔12穿透腔室 17 201135837 10的腔室壁之角落以對角方向形成β 或者，如第18圖所示，可在腔室10的每—個角落周 圍提供複數個電容器85。在此情況中，可穿透裝配在腔 室10的角落之相反側的個別腔室壁安裝電容器85，並 與角落保護器82的後表面連接。當然，孔12穿透裝配 在腔室10的角落之相反側的腔室壁形成，因此電容器 8 5係透過個別的孔12嵌入腔室壁。 雖然並未在圖式中顯示，較佳地可提供密封構件（未顯 不），以在嵌入對應的電容器85之每一個孔12内密封腔 室。 每一個電容器85可藉由螺紋連結（threadedc〇upiing) 與對應的角落保護器82連結…b，凸座84從角落保 護器82的後表面突出。外螺紋部分86安置在電容器85 末端。外螺紋部分86可旋進凸座84内。此外，凸座安 置槽13係形成在每一個孔12内，因此每一個電容器μ 的凸座84係嵌入對應的凸座安置槽13内。 内襯保護器81、凸座84、螺紋部分86、電容器85及 與電容器85連接的外部電路係彼此電氣連接。 10的腔室壁外表面上安裝支撐罩 較佳地在腔室 88， 以支撐對應的電容器85。φ擔1 、> 口 电今裔u叉梡罩88可以多種方法實施， 只要其可支撐嵌入在孔12内的對應電容器Μ即可。 每-個電容器85可包含真空可變電容器。真空可變電 容器具有熟知構造’因此相信進m細解釋是不必 要的。較佳地，在本發明中’真空可變電容器係經配置 18 201135837 得使電容器的電容量能藉由調整（例如旋轉）裝配在腔室 外部的電容量控制元件89控制。 控制電容器的電容量之原因在於當電容器85的電容 里可因應腔室1 〇内的電漿產生條件來控制時，能損降低 構造的效率可最佳化。 如第19圖所示，在基板處理設備缺乏本發明之能損降 低構造的情況A中，腔室10之腔室壁和角落周圍的電位 幾乎是零。但是，在如本發明實施例所示般裝配内襯保 護器81與電容器85的情況B中，腔室1〇之角落周圍的 電位顯著增至零以上。 因此，在本發明中，如第19圖的情況B所示，整體腔 室10的電位差可最小化，因此電漿可在腔室1〇内更均 勻地產生。明確地說，如圖中的「κ」部分所示腔室壁 上的能量損失可降低。所有節省下來的能量可用來產生 電漿。因此，例如，具有本發明之能損降低構造的沈積 設備或姓刻設備的效率可提升。 同時，具有上述特徵之本發明可應用在使用電漿之所 有類型的基板處理設備上。例如，本發明可用於乾式蝕 刻機、化學氣相沈積設備等。 如上所述，在根據本發明之基板處理設備的氣體供應 構造中，喷頭可以矩形配置方式裝配在腔室的上半部分 中，而使製程氣體均勻地注入腔室中。因此，電漿可均 勻地形成，而沈積或截刻操作的效能可提升。 此外，喷頭的注射表面具有圓形構造，並且注射孔係 19 201135837 以放射狀構造配置。因此’製程氣體可更均勻地注入腔 室中。 在本發明實施例甲所描述的技術精神可獨立實施，或 者可將其合併。雖然本發明已參考其範例實施例具體顯 示f描述’熟知技藝者會了解可在其中進行各種形式及 細即的改變，而不會偏離本發明之精神或範圍。因此， 本發明之精神或範圍必須由如下中請專利㈣界定。 201135837 【圖式簡單說明】 第1圖係顯示根據本發明之基板處理設備之結構的概 要剖面圖； 第2圖係根據本發明之基板處理設備的上蓋框架之透 視圖； 第3圖係顯示根據本發明之基板處理設備的上蓋框架 上之設置天線構造之一實施例的平面圖； 第4圖係顯示根據本發明之基板處理設備的上蓋框架 上之設置天線構造之另一實施例的平面圖； 第5圖係該上蓋框架上半部的關鍵部分之透視圖，其 顯示根據本發明之基板處理設備的製程氣體供應構造； 第6圖係沿著第5圖的A_A線取得之剖面透視圖； 第7圖係中央窗的倒轉透視圖，其顯示根據本發明之 基板處理設備的製程氣體注射構造； 第8至10圖係顯示根據本發明之基板處理設備之製程 氣體注射構造的數個實施例之剖面圖； 第11圖係顯示根據本發明之基板處理設備之天線冷 卻構造與絕緣板加熱構造的平面圖； 第12圖係顯示根據本發明之用來冷卻天線與加熱絕 缘板的渦流產生器的剖面圖； 第13圖係沿著第丨i圖的B_B線取得的剖面圖； 第14圖係根據本發明之天線的剖面圖； 第15圖係顯示根據本發明用於減少基板處理設備中 21 201135837 的能量損耗的構造之一實施例的平面圖； 第16圖係顯示根據本發明用於減少基板處理設備中 的成量損耗的構造之另一實施例的平面圖； 第17圖係第16圖之關鍵部分的放大圖； 第18圖係對應第17圖的放大圖，但顯示另一個實施 例；以及 第19圖係顯示根據本發明用於減少能量損耗的構造 之效果的參考圖。 【主要元件符號說明】 10 ： 腔室 11 ： 腔室外罩 12 ： 孔 13 ： 凸座安置槽 15 ： 基板支撐台 17 ： 下電極 20 : 上蓋框架 21 ： 外框架 22 ： 絕緣板支撐 23、 26 :托座 24a :加熱流體通道 24b :連接頭 25 ： 分割框架 26 ： 托座 27 ： 天線穿越凹槽 28 ： 天線固接支架 28a :天線嵌入孔 29 ： 天線托座 30 ： 窗 30A :中央窗 30B :周邊窗 301 :第一周邊窗 302 :第二周邊窗 303 :第三周邊窗 304 :第四周邊窗 31 ·· 絕緣板 22 201135837 40 ' 405 45、 451 453 50 ： 61 ： 62a 62b 63 : 65 : 66a 66c 71a 74 : 81 ' 85 : 88 : 40’ ：天線 401 :置入天線部分 :端點支撐 41、 4 Γ :中央天線 45’ ：周邊天線 45a :分支天線 :第一周邊天線 452 :第二周邊天線 :第三周邊天線 454 :第四周邊天線 RF電源供應器 60 ： 製程氣體供應單元 喷頭 62 ： 喷頭平板 、62a’、62a” ： 注射孔 、62b’、62b’，： 注射表面 凹槽 64 ： 進氣口 進氣管 65a 、65b :凸緣 :氣體供應管 66b :第一供應管 :第二供應管 71 ： 加熱管 :加熱管線 73 ： 渦流產生器 渦流管 75 ： 渦流旋轉室 82 :内襯保護器 84 : 凸座 電容器 86 ： 外螺紋部分 支撐罩 89 ： 電容量控制元件 23One of the peripheral windows 30B goes to I*, *, ,,, IS, and passes through the other three peripherals in a clockwise direction. For example, referring to Fig. 3, the first-peripheral antenna 451 extends clockwise from the first peripheral window 3〇1 through the second peripheral window 3(10) and the third periphery f303 to the fourth peripheral window 3〇4. The second peripheral antenna 452 extends from the second peripheral window 3〇2 through the third peripheral window 3〇3 and the fourth peripheral window 304 to the first peripheral window 3〇丨 in a clockwise direction. The beginning end of the second peripheral antenna 452 is disposed inside the first peripheral antenna 45A. The third peripheral antenna 453 and the fourth peripheral antenna 454 are disposed in the same manner as the first peripheral antenna 45A and the second peripheral antenna 452. Therefore, basically, the four peripheral antennas 45 are regularly arranged in a spiral shape while being spaced apart from each other with a uniform gap. In the drawings, reference numeral 401 denotes a portion on which the center antenna 41 or each of the peripheral antennas 45 is placed. The symbol 405 indicates that the end support ' is disposed at the point where the center antenna 41 or each of the peripheral antennas 45 extends. Thus, the corresponding antenna 40 can be coupled to the ground portion by the end support. Preferably, three antenna insertion holes 28a are formed in each of the antenna fixing brackets 28, and thus are embedded in the respective antenna insertion holes 28a through the three peripheral antennas 45 corresponding to the division frame 25. The antenna holder (29; see Fig. 2 10 201135837) is coupled to the upper half of the antenna fixing bracket 28, and the peripheral antenna 45 can be stably fixed to the antenna fixing bracket 28. In the present invention providing the upper cover frame 2'' and the antenna 4'' having the above arrangement, the direction in which the plasma is generated in the chamber is closely related to the configuration of the peripheral window and the arrangement of the antenna around the central window of the upper cover frame. Therefore, during the substrate processing operation, not only a central portion of the chamber but also a plasma of uniform density can be formed on the edge portion of the cavity. Further, eddy currents are generated around the split frame 25, so that the plasma can be further distributed evenly. Therefore, due to the above configuration of the upper cover frame 20 and the antenna 4, the processing efficiency can be remarkably improved. Figure 4 is a plan view showing another embodiment of the configuration of the antenna. The antenna 4' shown in Fig. 4 includes a central antenna 41, and the peripheral antenna 45'' is oriented toward the central antenna of the embodiment of Fig. 3. 41 and the peripheral antenna 45 are oriented in opposite directions. Each of the four peripheral antennas 45 includes two branch antennas 45& which are separated from a single lead. Therefore, the four pairs of peripheral antennas 45 are disposed in a spiral form on the four peripheral windows 3B. Next, the configuration in which the process gas is supplied and injected to the substrate processing apparatus equipped with the upper cover frame 2 of the above configuration will be explained with reference to Figs. 5 to 1 . In one embodiment, the spray head (61; see Fig. 7) is fitted over a portion of the split frame 25 (with the central window 30A defined therein) to allow process gases to be injected from the spray head 61 into the chamber. In other words, the central window 3A has a moment 201135837. The wiper that can inject the process gas into the chamber "is assembled on each of the four divided frames 25 forming the central window 30A. Figure 7 shows that An inverted perspective view of the central portion of the upper cover frame 2. The configuration of the head 61 will be described with reference to this figure. / Each of the heads 61 disposed on the corresponding divided frame 25 forming the four sides of the center window 30A includes a plurality of regular forms. An injection hole 62a is provided. In the embodiment of Fig. 7, the nozzle 61 is configured to inject process gases into the chamber from the four sides of the center window 3GA instead of the central window. Each of the heads 61 has a groove (63; see Fig. 6) formed in the lower surface of the dividing frame 25 to pass the process gas through the groove 63; and the head plate 62' having the injection hole 62a at Therein, and in addition to the outside of the recess 63, the split frame 25 is joined. Sections 8 to 1 show a cross-sectional view of the split frame of the assembly head plate 62. Several embodiments of the injection configuration of the reference head_head 61 will be described. The injection structure of the head 6i contains an injection table The face (4) is formed on the lower surface of the split frame 25. As shown in Fig. 8, the injection surface (4) is oriented in the horizontal direction, and the injection hole 62a is oriented in the vertical direction. Further, as shown in Fig. 9, the injection surface 62b It may have a semicircular or + elliptical arc shape, and the injection hole 62a may be formed in a radially outwardly extending shape in the arcuate injection surface 62b, the arcuate injection surface Mb, and the radial injection hole 62a, forming A simple configuration that effectively distributes the range gas to the chamber evenly, thereby enhancing the efficiency of the substrate processing operation. 12 201135837 Alternatively, as shown in Fig. 10, not only on the lower surface of the split frame 25, but also on the segmentation An injection surface 62b'' is formed on one side of the frame 25, and can penetrate the lower surface and the corresponding side of the split frame 25 to form an injection hole 62a". In this case, the side injection hole 62a is preferably configured such that the discharged process gas is injected into the center window 30A from the side injection hole 62a'. The configuration in which the process gas is supplied to the head 61 which can be applied to several embodiments having the above configuration will now be described with reference to the related drawings including Figs. 5 and 6. The process gas supply configuration can be implemented in a variety of ways. In an embodiment, the air inlets (64; see Fig. 6) are formed in the division frame 25 at positions adjacent to the four corners of the center window 30A. The intake pipe 65 is vertically coupled to the upper surface of the split frame 25 having the intake port 64. The process gas supply configuration may be configured such that the gas supplied through each of the intake pipes 65 flows along only the flow direction formed in the corresponding split frame 25 in one direction or in two directions based on the corresponding angle of the center window 30A. . In the case where the process gas supply configuration is configured to cause the gas to flow in both directions, a barrier wall may be provided in the intermediate portion of each of the grooves 63 forming the flow passages in the corresponding side of the center window 30A. Since the intake pipe 65 is fitted around the four corners of the center window 3A, the process gas supply configuration can be formed without hindering the holding of the bracket 26 or 29 of the insulating plate 31. Element symbols 65a and 65b denote flanges of the intake pipe 65. The upper flange 65a is fixed to the upper cover structure fitted above the chamber, and the lower flange 13 201135837 65b is fixed to the upper cover frame 2''. In the present embodiment, 'four inlets ma ^ and s65 are assembled around the center window 30A. 8 See Fig. 5 for distributing the single oxygen supply tube 66a for the library to the four intake pipes 65. The soil, & ^ knife is divided into two first supply tubes 66b. Each of the first supply tubes 66b branches into a plurality of trays; v^^ is depleted into two second supply tubes 66c. The second supplier 66c is connected to the corresponding intake pipe 65. Meanwhile, although the display 1 is a rectangular configuration, the present invention is not limited thereto. Depending on the pen adjustment..., the construction of 0 can be done in various ways. The configuration, for example, may have an octagonal or hexagonal configuration. The structure of the cooling antenna 40 and the configuration of the heating insulating plate 31 are described with reference to Figs. The configuration of the heating insulating plate 31 includes a heating pipe 71 which discharges the heating air to the insulating plate 31. The heating pipe 71 is designed to form a fitting suitable for heating the insulating plate 均, and the configuration of the heating pipe 71 can be appropriately adjusted as long as it can uniformly heat the insulating plate 3丨. In the embodiment of the drawings, two heating lines are assembled on each of the peripheral windows 30Β. The insulating plate 3 1 disposed in the central window view is heated by a heating line extending from the peripheral window to the door ® 〇 3 〇 B. Add: The camp line includes a heating pipe 71 which is disposed on the window in a horizontal direction and has a discharge hole toward the window. The π Tianran 'heating tube 71 can be placed lower or higher than the antenna disposed on the window to avoid interference therebetween. The heating line 71a can be connected between the heating tubes 71 as shown in Fig. In this case, 'each of the heating tubes, the line 71a contains a tube having a diameter smaller than that of the heat pipe 71 of 14 201135837. Alternatively, there may be no heating line 71a. Thus, since the apparatus of the present invention is equipped with the heating of the heatable insulating sheet 31, the deposition of the polymer on the insulating sheet in the chamber 10 is reduced. The method of supplying heated air into the heating pipe 71 can be implemented using various configurations, for example, by connecting a heated air supply line thereto. In the present embodiment, the full stream generator 73 is used. I will refer to Figure 12 for an explanation in this article. As shown in Fig. 14, each of the antennas (40, 41, 45) in the configuration of the cooling antenna 4 has a hollow tubular shape, and the cooling fluid flows through the tubular antenna 40, thereby cooling the antenna 4''. In an embodiment, the cooling path may be configured such that the cooling fluid passes into the antenna 4A via the beginning of the antenna 40 and is then discharged from the antenna by its trailing end. The structure of the cooling fluid path flowing along the antenna 40 can be implemented using well-known techniques, and thus further explanation is omitted. In the embodiment of the present month, the heating of the heating plate and the cooling of the antenna can be carried out by using the eddy current generator 73. This will explain in detail. The vortex generator 73 is an energy separating element that divides compressed air into low-temperature gas and high-temperature air using a circular tube and a nozzle having a simple configuration without using any chemical action or combustion action. As shown in Fig. 12, compressed air is supplied into the vortex tube 74 via the supply pipe. Then, the compressed air supplied into the vortex tube 74 first enters the vortex rotating chamber 75 and rotates at a super-intermediate speed. Rotating air travels toward the heated air outlet. At the same time, when the secondary vortex passes through the lower pressure region located inside the main vortex, 15 201135837 eddy currents lose heat and travel toward the cooling air outlet. In these two air flows, the air particles in the inner air flow rotate for the same time as the air particles of the outer air flow, so the inner air flow moves at a lower speed than the outer air flow. This difference in moving speed means a decrease in kinetic energy. The lost kinetic energy is converted into heat thereby increasing the temperature of the outside air stream, while the temperature of the inside air stream is further reduced. The cooling path of the heating unit 71 and the antenna 40 is connected to both ends of the eddy current generator 73, respectively. Thus, the configuration in which the insulating plate 3 is heated and the antenna 4 is cooled at the same time can be implemented with this simple configuration. Meanwhile, although the vortex generator shown is used as a facility for supplying heated air and cooling air, the facility is not limited to the eddy current generator. Coolers with other configurations can be used, and facilities for supplying heated air and facilities for supplying cooling air can be separately provided. Next, the energy loss reduction structure of the substrate processing apparatus will be described with reference to Figs. 15 to 19, which can minimize the energy loss in the chamber surface and ensure plasma uniformity. The lining protector 81 is mounted on the inner surface of the chamber wall as shown in Figs. 15 and 16. Each of the liner protectors 81 is in intimate contact with the corresponding corner of the chamber and the corresponding chamber wall. Fig. 15 shows a lining protector 81 which is fitted on the inner surface of the frame outside the upper cover frame (9) (on the W portion of Fig. 1), and each of which is from the corresponding corner of the upper cover frame 20 toward the outer frame The inner surfaces of the peach neighbors extend. Figure 16 shows that when the split frame 16 201135837 (25, see 2jg|Chu, Fig., etc.) is not assembled inside the upper cover frame 2' or the lining protector 81 is disposed in the housing of the chamber 10 instead of the liter ° In the case of being placed around the upper cover frame 20, Vipassana s蒦|§ 8 1 of the loyalty, J text. The mother lining protector 82 belongs to the four pieces of the raw lining or protector. The lining protector 82 includes: a corner protector each having an "L" shape and mounted at a corresponding corner of the chamber 1 、 and a cavity-to-wall protector 83, each having a flat shape and mounted in the chamber 1 The corresponding cavity on the wall of the chamber. The liner protector 81 can be formed by anodizing the surface of the nameplate. In the embodiment of Fig. 16, only the π' of the liner protector 81, the crucible 82 can be formed by plating the surface of the aluminum plate. In this case, the cavity-to-wall protector 83 can be made of a ceramic coated plate. In the embodiment, the edge of each corner protector that is assembled together with the corresponding edge of the adjacent chamber wall retaining can 5|6 main air retainer 83 has a stepped configuration that engages with each other' thus the corner protector 82 It is flush with the joint between the chamber wall protector and the chamber wall. As shown in Fig. 17, "c, ^^公裕; - .." 〇P knife does not have a female corner protector 82 having a surface inclined at its inner corner with respect to the chamber wall. In the energy loss reduction configuration according to the present invention, each corner of the wall of the penetration chamber forms a hole 12 behind the corresponding corner protector 82. The capacitor Μ can be mounted in the hole 12 and electrically connected to the corresponding corner protector. The capacitor 85 is connected or grounded to an external circuit. As shown in Figures 15 to 17, a single capacitor 85 can penetrate the chamber of the chamber ι The corner of the chamber wall is embedded and connected to the rear surface of the corner protector 82. In this case, the hole 12 in which the capacitor 85 is embedded penetrates the corner of the chamber wall of the chamber 17 201135837 10 to form a β or a diagonal direction, As shown in Fig. 18, a plurality of capacitors 85 may be provided around each corner of the chamber 10. In this case, the capacitors 85 may be mounted through individual chamber walls mounted on opposite sides of the corners of the chamber 10. And connected to the rear surface of the corner protector 82. Of course, the holes 12 are formed through the chamber walls fitted on the opposite sides of the corners of the chamber 10, so that the capacitors 85 are embedded in the chamber walls through the individual holes 12. Not shown in the drawings, a sealing member (not shown) is preferably provided to seal the chamber within each of the apertures 12 embedded in the corresponding capacitors 85. Each capacitor 85 can be threaded (threadedc〇) Upiing) and corresponding The corner protector 82 is coupled to...b, and the boss 84 protrudes from the rear surface of the corner protector 82. The externally threaded portion 86 is disposed at the end of the capacitor 85. The externally threaded portion 86 can be screwed into the boss 84. Further, the boss seating groove 13 The holes 84 of each of the capacitors are embedded in the corresponding boss seating grooves 13. The liner protector 81, the boss 84, the threaded portion 86, the capacitor 85, and the capacitor 85 are connected. The external circuits are electrically connected to each other. A support cover is preferably mounted on the outer surface of the chamber wall 10 to be in the chamber 88 to support the corresponding capacitor 85. φ1, > Various methods are implemented as long as they can support corresponding capacitors 嵌入 embedded in the holes 12. Each of the capacitors 85 can comprise a vacuum variable capacitor. The vacuum variable capacitor has a well-known configuration 'so it is believed that it is unnecessary to explain Preferably, in the present invention, the 'vacuum variable capacitor is configured 18 201135837 so that the capacitance of the capacitor can be controlled by adjusting (e.g., rotating) the capacitance control element 89 mounted outside the chamber. The reason for the capacitance of the capacitor is that when the capacitance of the capacitor 85 can be controlled in accordance with the plasma generation conditions in the chamber 1 ,, the efficiency of the damage reduction structure can be optimized. As shown in Fig. 19, in the substrate processing In the case where the apparatus lacks the energy loss reducing structure of the present invention A, the potential around the chamber wall and the corner of the chamber 10 is almost zero. However, the liner protector 81 and the capacitor 85 are assembled as shown in the embodiment of the present invention. In the case B, the potential around the corner of the chamber 1 显 is significantly increased to zero or more. Therefore, in the present invention, as shown in the case B of Fig. 19, the potential difference of the entire chamber 10 can be minimized, so the plasma It can be produced more evenly within the chamber 1〇. Specifically, the energy loss on the chamber wall as shown in the "κ" portion of the figure can be reduced. All the energy saved can be used to generate plasma. Therefore, for example, the efficiency of the deposition apparatus or the surname apparatus having the energy loss reducing structure of the present invention can be improved. Meanwhile, the present invention having the above features can be applied to all types of substrate processing apparatuses using plasma. For example, the present invention can be applied to a dry etching machine, a chemical vapor deposition apparatus, or the like. As described above, in the gas supply configuration of the substrate processing apparatus according to the present invention, the head can be assembled in the upper half of the chamber in a rectangular configuration, and the process gas is uniformly injected into the chamber. Therefore, the plasma can be formed uniformly, and the performance of the deposition or dicing operation can be improved. Further, the injection surface of the spray head has a circular configuration, and the injection hole system 19 201135837 is configured in a radial configuration. Therefore, the process gas can be injected into the chamber more uniformly. The technical spirit described in the embodiment A of the present invention can be implemented independently or can be combined. The present invention has been described with reference to the exemplary embodiments thereof. It is to be understood by those skilled in the art that the present invention may be modified in various forms and modifications without departing from the spirit or scope of the invention. Therefore, the spirit or scope of the present invention must be defined by the following patent (4). BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic cross-sectional view showing the structure of a substrate processing apparatus according to the present invention; FIG. 2 is a perspective view of a top cover frame of a substrate processing apparatus according to the present invention; A plan view showing an embodiment of an antenna configuration on a top cover frame of a substrate processing apparatus of the present invention; and FIG. 4 is a plan view showing another embodiment of a configuration of an antenna on a cover frame of a substrate processing apparatus according to the present invention; 5 is a perspective view of a key portion of the upper half of the upper cover frame, showing a process gas supply structure of the substrate processing apparatus according to the present invention; FIG. 6 is a sectional perspective view taken along line A_A of FIG. 5; 7 is an inverted perspective view of a central window showing a process gas injection configuration of a substrate processing apparatus according to the present invention; FIGS. 8 to 10 are diagrams showing several embodiments of a process gas injection configuration of a substrate processing apparatus according to the present invention. 1 is a plan view showing an antenna cooling structure and an insulating plate heating structure of a substrate processing apparatus according to the present invention; 12 is a cross-sectional view showing a vortex generator for cooling an antenna and a heating insulating plate according to the present invention; FIG. 13 is a cross-sectional view taken along line B_B of the first drawing; FIG. 14 is a view according to the present invention. FIG. 15 is a plan view showing an embodiment of a configuration for reducing energy loss of 21 201135837 in a substrate processing apparatus according to the present invention; FIG. 16 is a view showing a reduction in a substrate processing apparatus according to the present invention. FIG. 17 is an enlarged view of a key portion of FIG. 16; FIG. 18 is an enlarged view corresponding to FIG. 17, but showing another embodiment; and FIG. A reference diagram showing the effect of the configuration for reducing energy loss according to the present invention. [Main component symbol description] 10 : Chamber 11 : External cavity cover 12 : Hole 13 : Seat placement groove 15 : Substrate support table 17 : Lower electrode 20 : Upper cover frame 21 : Outer frame 22 : Insulation plate support 23 , 26 : Bracket 24a: heating fluid passage 24b: connector 25: split frame 26: bracket 27: antenna through recess 28: antenna fixing bracket 28a: antenna insertion hole 29: antenna bracket 30: window 30A: center window 30B: Peripheral window 301: first peripheral window 302: second peripheral window 303: third peripheral window 304: fourth peripheral window 31 · Insulation board 22 201135837 40 ' 405 45, 451 453 50 : 61 : 62a 62b 63 : 65 : 66a 66c 71a 74 : 81 ' 85 : 88 : 40 ' : Antenna 401 : Inserted antenna section : End point support 41 , 4 Γ : Center antenna 45 ' : Peripheral antenna 45a : Branch antenna : First peripheral antenna 452 : Second Peripheral antenna: Third peripheral antenna 454: Fourth peripheral antenna RF power supply 60: Process gas supply unit head 62: Head plate, 62a', 62a": Injection hole, 62b', 62b',: Injection surface Groove 64: intake port intake pipe 65a, 65b: flange: gas supply pipe 66b: first supply pipe: second supply pipe 71: heating pipe: heating pipe 73: vortex generator vortex pipe 75: vortex swirling chamber 82: lining protector 84: pedestal capacitor 86: externally threaded portion support cover 89: capacitance control element 23