KR20110079508A - Gas supply structure for substrate processing apparatus - Google Patents

Abstract

PURPOSE: A gas supply structure of a substrate processing apparatus is provided to regulate the generated plasma and to enhance an evaporation or engraving process performance by arranging a shower head at an upper part of a chamber in a rectangular ring type structure and injecting regularly a process gas within a chamber. CONSTITUTION: A lead frame(20) includes the outer frame, a central window and a partitioning frame(25). The outer frame forms an outer side of a polygonal frame body. The central window is installed within the outer frame. The partitioning frame discriminates window surrounding the central window. A shower head(61) is installed at a bottom of the partitioning frame by a polygonal ring structure so that it can inject a process gas into a chamber. The shower head forms a horizontal injection face and installs a gas injection hole on the horizontal injection face in a vertical direction.

Description

Gas supply structure for substrate processing apparatus

The present invention relates to a gas supply structure of a substrate processing apparatus for generating a plasma in a chamber to perform a substrate surface treatment process.

Electronic devices such as a large scale integrated circuit (LSI) or a flat panel display (FPD) are subjected to a vacuum treatment process on a substrate during manufacturing.

This vacuuming process introduces a gas into the chamber, forms a plasma by high voltage discharge, and physically sputters the material on the substrate surface by its acceleration force and chemically activates the substrate surface by the activated species of the plasma. A method of decomposing the phase material.

Substrate processing techniques using plasma include Plasma Etching (PE), Reactive Ion Etching (RIE), Magnetic Enhanced Reactive Ion Etching (MERIE), Electron Cyclotron Resonance (ECR), and Transformer Coupled Plasma (TCP), depending on how plasma is formed. And Inductively Coupled Plasma (ICP).

In particular, high density plasma formation and uniformity of plasma concentration on glass (or semiconductor) substrates have a significant impact on deposition or etching performance. For this reason, development has been progressed by changing various methods for generating plasma, and one of them is an induced coupling plasma (ICP).

The inductively coupled plasma method is a high density plasma method in which an induction magnetic field is generated inside the coil when the coil is wound outside the dielectric to generate an induction magnetic field in the reaction chamber. .

A substrate processing apparatus using an ICP method is generally provided with a lower electrode on which a substrate is mounted below the inside of a chamber, and an antenna to which RF power is applied on the chamber or an upper part of a lead frame coupled to the chamber, and reacts in the chamber. It is configured to generate a plasma while supplying a gas to perform a surface treatment process of the substrate.

The substrate processing apparatus as described above has a structure injecting a process gas into the chamber, and has a direct injection method and a shower head method.

According to the structure of injecting the process gas into the chamber, it is possible to form a more uniform plasma, and also have an important effect on the deposition or etching performance of the substrate. Therefore, there is a need for a gas injection structure suitable for a larger substrate processing apparatus.

The contents of the background art described above are technical information that the inventor of the present application holds for the derivation of the present invention or acquired in the derivation process of the present invention and is a known technology disclosed to the general public prior to the filing of the present invention I can not.

The present invention has been made to solve the above problems, by arranging the shower head in a rectangular ring structure to uniformly spray the process gas in the chamber, forming a uniform plasma as well as deposition or etching performance It is an object of the present invention to provide a gas supply structure of a substrate processing apparatus so that this can be improved.

The gas supply structure of the substrate processing apparatus which concerns on this invention for realizing said subject is provided with the outer frame which comprises the outer surface of a polygonal body, and is provided in the inside of the outer frame, and a center window and the peripheral window around this center window A lead frame provided with a partition frame for separating a; The bottom of the partition frame, characterized in that provided with a shower head arranged in a polygonal ring structure to inject the process gas into the chamber.

In this case, the shower head may have a spray surface formed in a horizontal plane, and a gas injection hole formed in the horizontal plane may be formed in a vertical direction.

In addition, the shower head has a spray surface formed in a curved surface, the gas injection hole formed in the curved surface may be formed in a radial structure.

In addition, the shower head may have a spray surface formed on the side surface of the central window as well as the bottom surface of the partition frame.

In addition, the outer frame of the frame may be formed in a rectangular frame structure, the shower head may be configured to be arranged in a rectangular ring structure.

In the square-shaped partition frame constituting the center window, gas introduction pipes are connected to respective corners of the square, and configured to supply process gas to the shower head through an inner flow path of the partition frame.

The gas supply structure of the substrate processing apparatus which concerns on this invention for realizing the said subject is provided with the shower head so that process gas can be injected in a chamber, The shower head is formed in the curved surface, and this curved surface The formed gas injection port is characterized in that formed in a radial structure.

The main problem solving means of the present invention as described above, will be described in more detail and clearly through examples such as 'details for the implementation of the invention', or the accompanying 'drawings' to be described below, wherein In addition to the main problem solving means as described above, various problem solving means according to the present invention will be further presented and described.

In the gas supply structure of the substrate processing apparatus according to the present invention, since the shower head is arranged in a rectangular ring-shaped structure on the upper portion of the chamber to uniformly inject the process gas into the chamber, a uniform plasma is formed, and the deposition or etching is performed. It provides the effect of improving the processing performance.

In addition, the present invention provides an effect of more uniformly injecting the process gas because the spraying surface of the showerhead is composed of a curved structure, and the injection hole is formed in a radial structure.

1 is a cross-sectional configuration view showing a substrate processing apparatus according to the present invention,
2 is a perspective view showing a lead frame in the substrate processing apparatus according to the present invention;
3 is a plan view of an embodiment showing a structure in which an antenna is disposed in a lead frame in the substrate processing apparatus according to the present invention;
4 is a plan view of another embodiment showing a structure in which an antenna is arranged in a lead frame in the substrate processing apparatus according to the present invention;
5 is a perspective view of an essential part of an upper portion of a lead frame showing a process gas supply structure in a substrate processing apparatus according to the present invention;
6 is a cutaway view in the AA direction of FIG. 5, FIG.
7 is a bottom perspective view of a central window showing a process gas injection structure in a substrate processing apparatus according to the present invention;
8 to 10 are schematic cross-sectional views of various embodiments of a process gas injection structure in a substrate processing apparatus according to the present invention;
11 is a plan view showing the antenna cooling structure and the insulating plate heating structure in the substrate processing apparatus according to the present invention,
12 is a cross-sectional view showing a vortex generator used for antenna cooling and insulation plate heating in the present invention;
13 is a cross-sectional view taken along the line BB of FIG. 12;
14 is a cross-sectional view of an antenna configured in the present invention;
15 is a plan view showing an embodiment of the energy loss reduction structure in the substrate processing apparatus according to the present invention;
16 is a plan view showing another embodiment of the energy loss reduction structure in the substrate processing apparatus according to the present invention;
17 is an enlarged view of a main part of FIG. 16;
18 is an enlarged view of an essential part of an embodiment different from that of FIG. 17;
19 is a reference diagram for explaining the effect of the energy loss reduction structure of the present invention.

Hereinafter, exemplary embodiments of the present invention will be described with reference to the accompanying drawings.

In describing the configurations of various embodiments of the present invention, like reference numerals refer to like parts, and repeated descriptions thereof will be omitted.

1 is a schematic cross-sectional view showing an embodiment of a substrate processing apparatus according to the present invention.

The substrate processing apparatus according to the present invention includes a chamber main body 11, a substrate mounting base 15 and a lower electrode 17 provided on the chamber main body on which the substrate S is mounted, and the chamber main body 11. A lead frame 20 coupled to the upper portion, a plurality of windows 30 provided in the lead frame 20, an antenna 40 and an RF power applying unit 50 disposed on the windows 30, The process gas supply unit 60 is configured to supply a process gas into the chamber 10 including the chamber body 11 and the lead frame 20.

Such main characteristic components of the substrate processing apparatus according to the present invention will be described in detail.

First, the lead frame 20 will be described with reference to FIGS. 2 to 3.

The lead frame 20 is formed in a rectangular frame structure, and has a structure partitioned to form five windows 30 as a whole.

To this end, the lead frame 20 includes an outer frame 21 constituting the outer surface of the rectangular frame body, and a partition frame 25 connected to the inside of the outer frame 21 to partition five windows 30. Is done.

The five windows 30 formed in the lead frame 20 have a center window 30A located at the center of the lead frame 20 and four peripheral windows 30B arranged around the center window 30A. It is composed of

The center window 30A and the peripheral window 30B both have a rectangular window structure. In the drawing of this embodiment, four peripheral windows 30B are disposed in a clockwise direction with respect to the center window 30A. Of course, it is also possible to arrange the peripheral windows 30B counterclockwise around the center window 30A.

When each peripheral window 30B has a rectangular structure, the first side (a) partitioned from the central window 30A and the other peripheral window 30B in the clockwise direction, and the other peripheral window 30B in the clockwise direction The second side (b), which is divided into and the third side (c), which faces the first side (a) and contacts the outer surface of the lead frame 20, also faces the second side (b) of the lead frame It consists of a fourth side (d) in contact with the outer surface.

At this time, the first side a of each peripheral window 30B is in contact with one surface of the center window 30A and the second side b 'of the front peripheral window 30B, so that all the peripheral windows 30B are It is preferable to be comprised so that it may have a structure arrange | positioned continuously clockwise about the center window 30A.

Each peripheral window 30B has a first side a and a second side b formed in the clockwise direction by the partition frame 25, and a third side c and a fourth side d. Is formed by the outer frame 21.

Therefore, while each peripheral window 30B is in contact with any one of the square surfaces of the central window 30A, four peripheral windows are continuously arranged in a clockwise or counterclockwise direction with respect to the central window, and are arranged uniformly as a whole. Will be.

An insulating plate 31 made of a ceramic material or the like is inserted into and installed in the center window 30A and the peripheral window 30B arranged in such a configuration. Both the inner side of the outer frame 21 and each of the partition frames 25 are provided. The plate support part 22 of the stepped structure is formed in the part so as to support the outer surface of the insulating plate 31.

In addition, fixing jiges 23 and 26 are installed in the outer frame 21 and the partition frame 25 so that the insulating plates 31 installed in the respective windows 30 are not separated from each other. The fixing jig 23 installed in the frame 21 may have an L-shaped cross section, and the fixing jig 26 installed in the partition frame 25 may have a U-shaped cross section. .

The fixing jig 26 of the U-shaped structure is configured to support both of the insulating plates 31 around one partition wall.

The fixing jig 23, 26 is preferably fixed to the lead frame 20 using a fastening member or the like.

Such fixing members 23 and 26 can be implemented by variously changing the shape and structure according to the implementation conditions.

Meanwhile, referring to FIG. 3, in the outer frame 21 of the lead frame 20, a heating passage 24a through which a fluid capable of heating the lead frame may pass may be formed. Of course, one side of the outer frame 21 may be provided with an entry and exit connection nipple 24b connected to the heating channel 24a and a line for supplying an external heating fluid.

In addition, in the lead frame 20, the partition frame 25 includes an antenna passage part 27 formed lower than other portions so that the peripheral antennas 45 to be described below will pass through. Referring to FIG. 2, antenna passages 27 are formed in a partition frame 25 that partitions between the peripheral window 30B and the peripheral window 30B.

In FIG. 3, reference numeral 28 denotes an antenna fixing bracket installed at the antenna passage 27 of the partition frame 25 to fix the antennas. And reference numeral 29 denotes an antenna fixing jig which is covered by the antenna fixing bracket 28 so that the peripheral antennas 45 do not escape. At this time, the antenna fixing jig 29 is also preferably formed in a U-shaped structure, it is preferable to be configured to perform the role of fixing the insulating plate 31 at the same time.

On the other hand, the lead frame 20 has been described by illustrating a configuration formed in a rectangular frame structure, but is not limited to this, the leaf frame 20 is implemented in various forms according to the implementation conditions such as pentagonal frame, hexagonal frame body, etc. can do.

Next, an arrangement structure of the antenna 40 of the substrate processing apparatus having the lead frame 20 structure as described above will be described with reference to FIGS. 3 and 4.

Referring to FIG. 3, two central antennas 41 are installed in the center window 30A of the lead frame 20, and four peripheral antennas 45 are installed in the four peripheral windows 30B.

Two center antennas 41 may be introduced at the center of the lead frame and two antennas 40 may be disposed in the center window 30A and rotate clockwise.

The four peripheral antennas 45 may be configured such that one antenna is introduced from each peripheral window 30B and sequentially passes through three other peripheral windows 30B in a clockwise direction. Referring to FIG. 3, for example, the first peripheral antenna 451 may start in the first peripheral window 301 and may be clockwise through the second peripheral window 302 and the third peripheral window 303. It is connected to the window 304, the second peripheral antenna 452 starts in the second peripheral window 302, clockwise through the third peripheral window 303, the fourth peripheral window 304 in the first peripheral It is configured to be connected to the window 301. In this case, the second peripheral antenna 452 starts at an inner portion of the first peripheral antenna 451, and the third peripheral antenna 453 and the fourth peripheral antenna 454 also have the first peripheral antenna 451 and the first peripheral antenna. By connecting in the same manner as the two peripheral antennas 452, the four peripheral antennas 45 in a coil-like structure as a whole is made of a configuration that is arranged at regular intervals.

In the figure, reference numeral 401 denotes a portion at which the central antenna 41 or the peripheral antenna 45 is introduced, and reference numeral 405 is disposed at the point where the central antenna 41 and the peripheral antenna 45 end, and thus each antenna. (40) Shows the end fixture to be connected to the grounded part.

In addition, the antenna fixing bracket 28 is preferably configured to have three antenna inserts 28a so that three peripheral antennas 45 passing through the partition frame 25 can be fitted and fixed. In addition, the antenna fixing jig 29 (see FIG. 2) is coupled to the upper portion of the antenna fixing bracket 28 so that the peripheral antennas 45 may be stably fixed.

The arrangement structure of the lead frame 20 and the antenna 40 as described above, affects the direction of plasma generation in the chamber by the arrangement structure of the plurality of peripheral windows and antennas around the center window of the lead frame, thereby providing a substrate In the treatment process, the plasma density may be uniformly formed throughout the center of the chamber as well as the peripheral region. In addition, an eddy current is formed around the partition frame 25 to affect uniform plasma formation. As a result, the arrangement of the lead frame 20 and the antenna 40 as described above may contribute to process performance improvement.

Figure 4 shows an antenna arrangement structure of another embodiment different from the above.

In the antenna 40 'illustrated in FIG. 4, the center antenna 41' and the peripheral antenna 45 'are provided in the opposite directions from the center antenna 41 and the peripheral antenna 45 illustrated in FIG.

In addition, the four peripheral antennas 45 'form one pair 45a in a structure divided into two at one lead line, and the four pairs of peripheral antennas 45' are coiled in four peripheral windows 30B. It is arranged and configured as.

Next, in the substrate processing apparatus having the lead frame 20 structure as described above, the process gas introduction and injection structure will be mainly described with reference to FIGS. 5 to 10.

The present invention is configured such that a process gas is injected by forming a showerhead 61 (see FIG. 7) structure in a partition frame 25 partitioning the center window 30A. That is, since the center window 30A is formed in a rectangular structure, the shower head 61 is configured in the four partition frames 25 for partitioning the central window 30A so that the process gas can be injected.

FIG. 7 is a view illustrating the central portion of the lead frame 20 from below, and describes the structure of the showerhead 61 with reference to the drawing.

The partition frame 25 constituting each side is provided with a shower head 61 in which a plurality of injection holes 62a are regularly arranged. FIG. 7 illustrates a structure in which the showerhead 61 is configured to inject process gases from four sides except near the edge of the center window 30A.

The configuration of such a showerhead 61 forms a groove portion 63 (see FIG. 6) through which process gas passes at the bottom of each side of the partition frame 25, and an injection hole 62a outside the groove portion 63. It is preferable to configure in such a manner that the showerhead plate 62 is formed.

8 to 10 are cross-sectional side views of the partition frame 25 including the showerhead plate 62, with reference to which to illustrate various embodiments of the showerhead 61 spraying structure.

The shower head 61 spraying structure forms a spraying surface 62b on the bottom surface of the partition frame 25, wherein the spraying surface 62b is formed in a horizontal structure as shown in FIG. The injection port 62a can be comprised in the vertical direction.

In addition, as shown in FIG. 9, the injection surface 62b 'may be formed in a round structure (semi-circular, semi-elliptic, etc.), and the injection hole 62a' may be formed in a structure that spreads in a radial structure on the round injection surface. . The configuration of the round spray surface 62b 'and the radial spray port 62a' as described above allows the process gas to be uniformly spread in the chamber with a simple structure, thereby improving the process efficiency.

In addition, as illustrated in FIG. 10, the injection surface 62b ″ may be formed not only on the bottom surface of the partition frame 25 but also on the side surface thereof, so that the injection hole 62a ″ may be formed on the bottom surface and the side surface, respectively. At this time, the side injection port (62a ") is preferably configured such that the process gas is injected toward the center window (30A).

Now, a structure for supplying the process gas to the showerhead 61 of the various embodiments configured as described above will be described with reference to FIGS. 5 and 6.

The process gas supply structure may be configured in various ways according to the implementation conditions, but in this embodiment, a gas inlet 64 (see FIG. 6) is formed near four corners of the center window 30A, and the gas inlet 64 is formed. The structure in which the gas introduction pipe 65 is vertically connected to the upper part of the partition frame 25 is illustrated.

In this case, the gas supplied through one gas introduction pipe 65 may be configured to be supplied in one or both directions depending on the path of the flow path formed in the partition frame about the edge of the center window 30A. have. At this time, when it is comprised so that it may flow in both directions, it is also possible to form a blocking wall in the center part of the groove part 63 which comprises a flow path in each side.

Since the gas introduction pipes 65 are installed at four corners of the center window 30A, the gas supply structure can be configured without interference with the fixing jigs 26 and 29 fixing the insulating plates 31.

Reference numerals 65a and 65b denote flanges of the gas introduction pipe 65. The upper flange portion 65a is fixed to the upper cover structure of the chamber and the like, and the lower flange portion 65b is fixed to the lead frame 20.

As such, four gas introduction pipes 65 are formed around the center window 30A. Referring to FIG. 5, one gas supply pipe 66a for supplying gas to the four gas introduction pipes 65 is provided. ) Is branched into two first supply pipes 66b, and the first supply pipe 66b is again branched into two second supply pipes 66c, and then each second supply pipe 66c is connected to each gas introduction pipe 65. It can be configured as a structure connected to).

Meanwhile, in the above, the shower head 61 has been described with an example in which the rectangular ring structure is disposed. However, the configuration is not limited thereto, and the shower head 61 may be pentagonally or hexagonally arranged according to the structure of the lead frame 20. It is also possible to carry out various modifications.

Next, the cooling structure of the antenna 40 and the heating structure of the insulating plate 31 will be described with reference to FIGS. 11 to 14.

In the structure which heats the insulating plate 31, the heating tube 71 which can inject heating air in the upper part of the insulating plate 31 is comprised.

If the arrangement structure of the heating tube 71 is a structure which can heat the insulating plate 31 uniformly as a whole, it can be designed and comprised suitably according to implementation conditions. In the drawing of this embodiment, two heating lines are formed in each peripheral window 30B, and the center window 30A has a structure capable of heating the insulating plate 31 by introducing a heating line disposed in the peripheral window 30B. To illustrate. At this time, the heating line is disposed in the horizontal direction on the upper window is composed of a heating tube 71 formed with injection holes in the window direction.

Of course, the heating tube 71 is configured to be lower or higher than the antenna so that interference with the antennas disposed above the window does not occur.

Meanwhile, in FIG. 11, the heating line 71a connected between the heating tubes 71 may include a tube having a smaller diameter than other heating tubes, or may not constitute the heating line 71a.

As such, by configuring the heating tube 71 for heating the insulating plate 31, it is possible to reduce the deposition of a polymer on the insulating plate 31 inside the chamber 10.

A method of supplying heating air to the heating tube 71 may be configured in various ways by connecting a line for supplying heating air. In this embodiment, a vortex generator 73 is used. This will be described below with reference to FIG. 12.

Next, the structure for cooling the antenna 40, as shown in Figure 14, each antenna (40; 41, 45) is configured in a hollow tube shape, the cooling fluid passes through the inside to cool the antenna do.

At this time, the configuration of the cooling channel is configured to allow the cooling fluid to flow into the antenna from the antenna 40 introduction portion, and to allow the cooling fluid to be discharged from the end side of the antenna 40. Since the circuit configuration through which the cooling fluid passes inside the antenna 40 is well known, a detailed description thereof will be omitted.

However, in the exemplary embodiment of the present invention, since the insulating plate heating and the antenna cooling can be simultaneously performed using the vortex generator 73, the description will be given.

The vortex generator 73 is an energy separation device that separates low-temperature air from high-temperature air from compressed air without any chemical or combustion action by using a nozzle and a circular tube having a simple structure. As illustrated in FIG. 12, compressed air When supplied to the vortex tube 74 through the pipe is first put into the vortex rotation chamber 75 is to perform a super fast rotation. This rotating air exits to the hot air outlet, where the secondary vortex flow loses heat and is directed towards the cold air outlet as it passes through the lower pressure region inside the primary vortex flow. In this case, in the two rotating air streams, the air particles of the inner flow have the same rotational time as the air particles of the outer flow, so the actual movement speed is lower than that of the outer flow. This difference in kinetic velocity means that the kinetic energy is reduced, and this lost kinetic energy is converted to heat, raising the temperature of the air in the outer stream and lowering the temperature in the inner stream.

By connecting each of the vortex generators 73 to the cooling passages of the heating tube 71 and the antenna 40, respectively, the insulation plate 31 can be heated by the introduction of a simple structure, and the antenna 40 can be cooled simultaneously. The structure can be realized.

In the above description, the vortex generator is exemplified as a means for providing heating air and cooling air, but is not necessarily limited thereto. Alternatively, the vortex generator may be configured using another cooler or using separate heating air supply means and cooling air supply means. Do.

Next, an energy loss reduction structure for minimizing energy loss of the chamber inner wall portion and ensuring plasma uniformity in the substrate processing apparatus according to the present invention as described above will be described with reference to FIGS. 15 to 19. do.

As shown in FIGS. 15 and 16, a liner protector 81 is installed on the wall surface of the chamber 10. At this time, the liner protector 81 is installed to be in close contact with the wall surface of the chamber including the corner portion of the chamber 10.

FIG. 15 illustrates a configuration in which the liner protectors 81 are installed on the inner wall surface (the 'W' portion of FIG. 1) of the lead frame 20 described above and connected to both wall surfaces around the corner portion.

16 is a case in which the above-described partition frame 25 (see FIG. 2, etc.) is not formed inside the lead frame 20 or the liner protector 81 is installed inside the main body of the chamber 10 instead of the lead frame side. Shows. At this time, the liner protector 81 is a constituent part, also referred to as a liner or protector, is formed in an 'L' shape structure and is installed in a corner portion of the chamber 10 and is formed in a planar structure. 10 may be formed of a wall protector 83 installed on the wall surface.

The liner protector 81 may be configured by anodizing a surface of aluminum material.

In addition, in the embodiment illustrated in FIG. 16, the liner protector 81 may be configured by anodizing a surface of the aluminum protector only on the corner protector 82. At this time, the wall protector 83 may be configured by coating a ceramic material.

At this time, it is preferable that the corner protector 82 and the wall protector 83 are configured to be joined to each other in a stepped structure so that the height difference is not formed on the wall surface of the chamber.

In the corner protector 82, the inner corner portion may be configured as an inclined surface with respect to the wall surface of the chamber, as in the 'C' portion of FIG.

Next, in the energy loss reduction structure of the present invention, a hole 12 penetrating the wall of the chamber behind the corner protector 82 is formed, and the hole 12 is electrically connected to the corner protector 82. Capacitor 85 is provided. At this time, the capacitor 85 is configured to be connected to an external circuit or grounded.

As shown in FIGS. 15 to 17, one of the capacitors may be configured to be connected to the rear surface of the corner protector 82 through the corner of the chamber 10. At this time, the hole 12 is formed through the diagonal direction so that the capacitor 85 is inserted into the corner of the chamber 10.

Alternatively, as shown in FIG. 18, a plurality of capacitors 85 may be provided and connected to the rear surface of the coater protector 82 at both walls around the corner of the chamber 10. In this case, holes 12 are formed in the corner walls of the chamber 10 so that the respective capacitors 85 can be inserted and mounted therein.

Although not illustrated in the drawings, a sealing member (not shown) capable of sealing the inside of the chamber is preferably provided in the hole 12 in which the capacitor 85 is mounted.

The capacitor 85 as described above may be configured to be connected to the corner protector 82 in a screwed manner. At this time, it is preferable that the boss 84 protrudes behind the corner protector 82, and the capacitor 85 is provided with a threaded portion 86, so that the threaded portion 86 is fastened to the boss 84. The hole 12 of the chamber is provided with a boss insertion portion 13 so that the boss 84 can be fitted therein.

Accordingly, the liner protector 81, the boss 84 and the threaded portion 86, the capacitor 85, and the external circuit connected to the capacitor 85 have an electrically interconnected structure.

It is preferable that a support cap 88 is provided on the outer wall of the chamber 10 to support the capacitor 85. The support cap 88 may be modified in various ways as long as it can support the capacitor 85 so that the capacitor 85 is inserted into the hole 12 of the chamber.

On the other hand, the capacitor 85 may be composed of a vacuum variable capacitor. Since the vacuum variable capacitor is a configuration of a well-known capacitor, a detailed structure description thereof is omitted. However, in the present invention, the vacuum variable capacitor is preferably configured to appropriately control the capacitance of the capacitor in such a manner as to adjust the capacity regulating mechanism 89 outside the chamber.

The reason for adjusting the capacitance of the capacitor as described above is to realize the optimized energy loss reduction operation by adjusting the capacitance of the capacitor 85 according to the plasma generation state in the chamber 10.

As shown in FIG. 19, when the energy loss reduction structure of the present invention is not provided (A), the wall and corner potentials of the chamber 10 are almost close to zero, but as in the present invention, the liner protector ( 81 and the capacitor 85 are provided (B), the potential at the corner of the chamber 10 is significantly higher than zero.

Therefore, in the present invention, as shown in FIG. 19B, the potential difference inside the chamber 10 as a whole can be minimized to generate a more uniform plasma in the chamber, and particularly at the wall surface of the chamber as shown in the "K" portion of the graph. By reducing the energy loss, the energy can be used fully to generate the plasma, thereby increasing the efficiency of the deposition apparatus or the etching apparatus.

On the other hand, the present invention as described above can be applied to both substrate processing apparatus using a plasma. For example, it can be applied to a substrate processing apparatus (Dry etcher), a chemical vapor deposition apparatus (Chemical Vapor Deposition) and the like.

As described above, the technical ideas described in the embodiments of the present invention can be performed independently of each other, and can be implemented in combination with each other. While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is evident that many alternatives, modifications, and variations will be apparent to those skilled in the art. It is possible. Accordingly, the technical scope of the present invention should be determined by the appended claims.

Claims (7)

A lead frame including an outer frame constituting an outer surface of the polygonal frame, and a partition frame provided inside the outer frame to distinguish a central window and a peripheral window around the central window;
The bottom surface of the partition frame, the gas supply structure of the substrate processing apparatus, characterized in that provided with a shower head arranged in a polygonal ring structure to inject the process gas into the chamber.
The method according to claim 1,
The shower head has a spray surface formed in a horizontal plane, and a gas injection hole formed in the horizontal plane is formed in a vertical direction.
The method according to claim 1,
The shower head has a spray surface formed in a curved surface, and the gas injection hole formed in the curved surface is formed in a radial structure gas supply structure of the substrate processing apparatus.
The method according to claim 1,
The gas showerhead of the substrate treating apparatus, wherein the shower head has a spray surface formed not only on the bottom surface of the partition frame but also on the side surface of the center window.
The method according to any one of claims 1 to 4,
The outer frame of the frame is formed in a rectangular frame structure,
The shower head is a gas supply structure of the substrate processing apparatus, characterized in that arranged in a rectangular ring structure.
The method according to claim 5,
In the quadrangular partition frame constituting the central window, the gas inlet pipes are connected to each corner of the quadrangular corner, and the substrate is configured to supply the process gas to the shower head through the inner flow path of the compartment frame Gas supply structure of the processing unit.
The shower head is provided to inject the process gas into the chamber,
The shower head has a spray surface formed in a curved surface, and the gas injection hole formed in the curved surface is formed in a radial structure gas supply structure of the substrate processing apparatus.

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