TW201135753A - Paste composition for electrode and photovoltaic cell - Google Patents
Paste composition for electrode and photovoltaic cell Download PDFInfo
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- TW201135753A TW201135753A TW100102720A TW100102720A TW201135753A TW 201135753 A TW201135753 A TW 201135753A TW 100102720 A TW100102720 A TW 100102720A TW 100102720 A TW100102720 A TW 100102720A TW 201135753 A TW201135753 A TW 201135753A
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- 239000000203 mixture Substances 0.000 title claims abstract description 99
- 239000002245 particle Substances 0.000 claims abstract description 163
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- 239000004332 silver Substances 0.000 claims abstract description 88
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- DLYUQMMRRRQYAE-UHFFFAOYSA-N tetraphosphorus decaoxide Chemical compound O1P(O2)(=O)OP3(=O)OP1(=O)OP2(=O)O3 DLYUQMMRRRQYAE-UHFFFAOYSA-N 0.000 claims abstract description 10
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- VSAISIQCTGDGPU-UHFFFAOYSA-N tetraphosphorus hexaoxide Chemical compound O1P(O2)OP3OP1OP2O3 VSAISIQCTGDGPU-UHFFFAOYSA-N 0.000 description 1
- 238000012549 training Methods 0.000 description 1
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 1
- HGBOYTHUEUWSSQ-UHFFFAOYSA-N valeric aldehyde Natural products CCCCC=O HGBOYTHUEUWSSQ-UHFFFAOYSA-N 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
- H01L31/02245—Electrode arrangements specially adapted for back-contact solar cells for metallisation wrap-through [MWT] type solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Landscapes
- Engineering & Computer Science (AREA)
- Sustainable Development (AREA)
- Life Sciences & Earth Sciences (AREA)
- Physics & Mathematics (AREA)
- Sustainable Energy (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Crystallography & Structural Chemistry (AREA)
- Dispersion Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Photovoltaic Devices (AREA)
- Conductive Materials (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010013515 | 2010-01-25 | ||
| JP2010222204A JP2011171273A (ja) | 2010-01-25 | 2010-09-30 | 電極用ペースト組成物及び太陽電池 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW201135753A true TW201135753A (en) | 2011-10-16 |
Family
ID=44307014
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW100102720A TW201135753A (en) | 2010-01-25 | 2011-01-25 | Paste composition for electrode and photovoltaic cell |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP2011171273A (ja) |
| TW (1) | TW201135753A (ja) |
| WO (1) | WO2011090213A1 (ja) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102568649A (zh) * | 2011-12-29 | 2012-07-11 | 彩虹集团公司 | 一种埋栅型晶体硅太阳能电池用电极浆料的制备方法 |
| CN106229026A (zh) * | 2016-07-12 | 2016-12-14 | 常州聚和新材料股份有限公司 | 合金银粉及其制备方法及由其制备的太阳能导电浆料 |
| CN105144305B (zh) * | 2012-12-28 | 2018-10-26 | 赫劳斯德国有限两和公司 | 制备mwt太阳能电池电极中的包含含钒化合物和含磷物质的导电浆料 |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5689773B2 (ja) * | 2011-10-01 | 2015-03-25 | 株式会社フジクラ | 光電変換素子用電極、光電変換素子、及び、光電変換素子用電極の製造に用いられる銀ペースト |
| CN102368391B (zh) * | 2011-10-26 | 2013-05-22 | 南昌大学 | 一种用于晶体硅太阳电池的高电导率无铅银浆及制备方法 |
| WO2013069727A1 (ja) * | 2011-11-10 | 2013-05-16 | 株式会社村田製作所 | 導電性ペースト、及び貫通電極の製造方法 |
| FR2992466A1 (fr) | 2012-06-22 | 2013-12-27 | Soitec Silicon On Insulator | Procede de realisation de contact pour led et structure resultante |
| EP2750139B1 (en) * | 2012-12-28 | 2019-02-27 | Heraeus Deutschland GmbH & Co. KG | An electro-conductive paste comprising a vanadium containing compound in the preparation of electrodes in MWT solar cells |
| EP2750141B1 (en) | 2012-12-28 | 2018-02-07 | Heraeus Deutschland GmbH & Co. KG | An electro-conductive paste comprising coarse inorganic oxide particles in the preparation of electrodes in MWT solar cells |
| EP2750142B1 (en) * | 2012-12-28 | 2017-05-24 | Heraeus Deutschland GmbH & Co. KG | An electro-conductive paste comprising an inorganic reaction system with a high glass transition temperature in the preparation of electrodes in mwt solar cells |
| JP6371099B2 (ja) * | 2014-04-18 | 2018-08-08 | ナミックス株式会社 | 導電性ペースト及び結晶系シリコン太陽電池 |
| JP7190989B2 (ja) * | 2019-09-17 | 2022-12-16 | 富士フイルム株式会社 | 導電膜、フィルムセンサー、タッチパネル、液晶表示装置、導電膜の製造方法、及び組成物 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0696988A (ja) * | 1992-09-11 | 1994-04-08 | Asahi Chem Ind Co Ltd | 積層セラミックコンデンサー内部電極用ペースト及び該ペーストを用いた積層セラミックコンデンサー |
| JPH08138969A (ja) * | 1994-11-02 | 1996-05-31 | Murata Mfg Co Ltd | 電子部品の製造方法 |
| JP5224722B2 (ja) * | 2007-05-17 | 2013-07-03 | 積水化学工業株式会社 | 樹脂組成物、導電ペースト及びセラミックペースト |
| CN102318013B (zh) * | 2009-03-27 | 2014-12-03 | 株式会社日立制作所 | 导电性浆料及具备使用其的电极配线的电子部件 |
-
2010
- 2010-09-30 JP JP2010222204A patent/JP2011171273A/ja not_active Withdrawn
-
2011
- 2011-01-25 TW TW100102720A patent/TW201135753A/zh unknown
- 2011-01-25 WO PCT/JP2011/051363 patent/WO2011090213A1/ja active Application Filing
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102568649A (zh) * | 2011-12-29 | 2012-07-11 | 彩虹集团公司 | 一种埋栅型晶体硅太阳能电池用电极浆料的制备方法 |
| CN105144305B (zh) * | 2012-12-28 | 2018-10-26 | 赫劳斯德国有限两和公司 | 制备mwt太阳能电池电极中的包含含钒化合物和含磷物质的导电浆料 |
| CN106229026A (zh) * | 2016-07-12 | 2016-12-14 | 常州聚和新材料股份有限公司 | 合金银粉及其制备方法及由其制备的太阳能导电浆料 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2011171273A (ja) | 2011-09-01 |
| WO2011090213A1 (ja) | 2011-07-28 |
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