201134755 六、發明說明： 【發明所屬之技術領域】 [0001] 本發明涉及一奈米礙管膜之製備方法。 【先前技術】 [00〇2]奈米碳管（Carbon Nanotube，CNT)係一種由石墨烯片 卷成之中空管狀物’其具有優異之力學、熱學及電學性 ' 質’故具有廣闊之應用領域。由於單根奈米碳管之尺寸 為奈米級，難於進行加工，為便於實際應用’人們嘗試 將複數奈米碳管作為原材料，製成具有較大尺寸之宏觀201134755 VI. Description of the Invention: [Technical Field of the Invention] [0001] The present invention relates to a method for preparing a nano tube film. [Prior Art] [00〇2] Carbon Nanotube (CNT) is a hollow tubular material rolled from graphene sheets, which has excellent mechanical, thermal and electrical properties. field. Since the size of a single carbon nanotube is nanometer-scale, it is difficult to process, and it is convenient for practical use. 'People try to make a plurality of carbon nanotubes as raw materials to make a macro with a larger size.
Q 結構。該宏觀結構由.複.數..奈米碳:管麵成:，.可以係膜狀、 線狀或其他形狀。先前技術中，一般將由複數奈米碳管組 成之宏觀膜狀結構稱為奈米碳管，膜.:..（ Carbon Nano tube Film) ° 師3]馮辰等人於2008年8月16日公開之第200833862號台灣 發明專利申請公佈說明書中揭露5了 一種從奈米碳管陣列 中直接拉取獲得之奈来碳管膜，這種奈米碳管膜具有宏 〇 觀尺度且能夠自支撐，其包括複數在凡德瓦爾力作用下 首尾相連之奈米碳管。由於該奈米碳管膜中奈米碳管基 本沿同一方向排列，故該奈米碳管膜能夠較好之發揮夬 米碳管轴向具有之導電及導熱等各種優異性質，具有極 為廣泛之應用前景。 [醒]然而，該奈米碳管膜從一奈米碳管陣列中拉出，膜之面 積受到該奈米碳管陣列尺寸之限制。傳統之形成奈米碳 管陣列之方法主要係化學氣相沈積法（CVD)。化學氣相、尤 積法運用沈積在生長基底上之奈米尺度之過渡金屬或其 099110663 表單編號A0101 第3頁/共24頁 0992018755-0 201134755 氧化物作為催化劑，在一固定溫度下熱解碳源氣體來製 備奈米碳管陣列。目前化學氣相沈積法一般選用平面形 狀之硬質生長基底，如矽基底。而該平面形狀之硬質生 長基底由於受反應室尺寸之限制，其面積無法做到很大 ，從而使得生長於其上之奈米碳管陣列面積也無法做到 很大。故，使從該生長基底上生長之奈米碳管陣列中拉 取之奈米碳管膜寬度和面積受到限制。 【發明内容】 [0005] 有鑒於此，提供一種能夠獲得尺寸較大之奈米碳管膜之 製備方法實為必要。 [0006] 本發明提供一種奈米碳管膜之製備方法，一種奈米碳管 膜之製備方法，其包括以下步驟：在一彎曲成曲面形狀 之面狀柔性基底之表面形成一奈米碳管陣列；至少局部 展開所述被彎曲成曲面形狀之面狀柔性基底，從而至少 局部展開所述奈米碳管陣列；採用一拉伸工具與該展開 部分之奈米碳管陣列接觸，從而在該奈米碳管陣列中選 定一奈米碳管片段；以及通過該拉伸工具拉取該選定之 奈米碳管片段，形成一奈米碳管膜。 [0007] 相較於先前技術，本發明奈米碳管膜之製備方法具有以 下優點··與傳統之硬質生長基底相比，該柔性基底可被 彎曲成各種形狀之後再設置在相同之反應爐中生長奈米 碳管陣列，從而可充分利用反應爐内之空間，生長出較 大尺寸之奈米碳管陣列，進而使從該奈米碳管陣列中拉 取獲得之奈米碳管膜具有較大之面積。 【實施方式】 099110663 表單編號A0101 第4頁/共24頁 0992018755-0 201134755 [0008] 以下將結合附圖詳細說明本發明實施例奈米碳管膜之製 備方法。 [0009] 請參閱圖1及圖2，本發明第一實施例提供一種奈米碳管 膜之製備方法，其包括以下步驟： [0010] 步驟一：在一彎曲成曲面形狀之面狀柔性基底104之表面 形成一奈米碳管陣列102 ; [0011] 步驟二：至少局部展開所述被彎曲成曲面形狀之面狀柔 性基底104，從而至少局部展開所述奈米碳管陣列102 ; Ο [0012] 步驟三：採用一拉伸工具與該展開部分之奈米碳管陣列 102接觸，從而在該奈米碳管陣列102中選定一奈求碳管 片段；以及 [0013] 步驟四：通過該拉伸工具拉取該選定之奈米碳管片段， 形成一奈米碳管膜100。 [0014] 以下將對上述各步驟進行詳細說明。 ^ [0015] 在步驟一中，所述奈米碳管陣列102通過化學氣相沈積法 ❹ 形成於所述彎曲成曲面形狀之面狀柔性基底104表面，所 述奈米碳管陣列102優選為超順排奈米碳管陣列102。本 實施例中，該超順排奈米碳管陣列102之製備方法具體包 括： [0016] (a)提供一彎曲成曲面形狀之面狀柔性基底104，該柔性 基底104具有至少一表面，且所述柔性基底104之至少一 表面上形成有一催化劑層； [0017] (b)採用化學氣相沈積法在所述面狀柔性基底104之至少 099110663 表單編號A0101 第5頁/共24頁 0992018755-0 201134755 一表面上生長超順排奈米碳管陣列102。 [0018] 在步驟（a)中，所述柔性基底104之材料為耐高溫、可發 生彎曲變形且可以支撐所述奈米碳管陣列102之材料。 [0019] 所述柔性基底1 0 4之材料之熔點大於奈米碳管陣列1 〇 2之 生長溫度，優選為大於500°C。該柔性基底104為具有較 小厚度之面狀或片狀基底，其材料可為金屬片、石英片 、矽片或陶瓷片等，所述金屬片可為鉬片、鈦片、锆片 、鈮片、鈕片、铪片、鎢片、釩片或上述幾種材料之任 意組合之合金片，或不銹鋼片等。該柔性基底1〇4之厚度 以可使該柔性基底104發生彎曲變形且不發生斷裂為基準 ，且該柔性基底104厚度越小，越可產生較大之f曲變形 。如若所述柔性基底104為金屬片，則該柔性基底1〇4之 厚度可為小於等於3毫米且大於等於0.01毫米，若所述柔 性基底104為矽片、石英片和陶瓷片，則該柔性基底1〇4 之厚度可小於等於0. 3毫米，優選為小於等於〇. 1毫米並 大於等於1微米。本實施例中，該柔性基底1〇4之材料為 50微米之石英片。另外，該柔性基底1〇4所具有之至少一 表面優選為一平滑之表面。 [0020] 該面狀或片狀之柔性基底1〇4可被彎曲成各種曲面形狀， 且該曲面形狀之柔性基底1 〇4還可被展開成一平面形狀而 不會斷裂。該曲面形狀可為筒形形狀、螺旋形狀或其他 規則或不規則之形狀。具體為，該曲面形狀可視為具有 一固定長度之動直線段沿一曲線軌跡平行移動形成之面 。該動直線段被稱為桎面之直母線，定曲線被稱為桎面 之準線。當準線係圓時所得枉面稱為圓柱面，當準線係 0992018755-0 099110663 表單編號A0101 第6頁/共24頁 201134755 螺旋線時所得柱面為螺旋柱面。本實施例中，該柔性基 底104被彎曲成螺旋柱面，即可視為具一固定寬度之直線 段平行地沿一平面螺旋線軌跡移動形成之面，該直線段 垂直於平面螺旋線所在之平面。該螺旋狀柔性基底104具 有一由該螺旋狀柔性基底104定義之間隙，該間隙為螺旋 狀間隙。該間隙之寬度以大於後續生長之奈米碳管陣列 102之南度為基準。 [0021] Ο 所述催化劑層之材料可選擇為鐵（Fe)、鈷（Co)、鎳 (Ni)或者該幾種金屬之氧化物，該催化劑層可採用熱 沈積、電子束沈積、蒸鍍或磁控濺射等方法形成於上述 柔性基底104之至少一表面。該催化劑層之厚度可根據實 際需要選擇，優選為1奈米至50奈米。該催化劑層也可以 同時形成在所述柔性基底104之相對之兩個表面，從而使 在該兩個相對之表面均形成所述奈米碳管陣列102。本實 施例中，所述催化劑層形成在該柔性基底104之一個表面 ，該催化劑層之材料為鐵，厚度為5奈米。 〇 [0022] 在步驟（b)中，將上述表面形成有催化劑層並且被彎曲成 曲面形狀之面狀柔性基底104在300°C~900°C (如700°C )之空氣中退火約30分鐘~90分鐘；以及將該柔性基底 104置於一反應爐中，在保護氣體環境下加熱到500°C ~900°C (如740°C)，然後通入碳源氣體反應約5分鐘 〜30分鐘，生長得到超順排之奈米碳管陣列102。 所述反應爐‘可為管式反應爐，當該柔性基底104被彎曲成 螺旋狀或圓筒狀時，該螺旋狀或圓筒狀柔性基底104之軸 向可平行於管式反應爐之軸向設置於該管式反應爐内。 099110663 表單編號A0101 第7頁/共24頁 0992018755-0 [0023] 201134755 進一步地，可通過一支架固定該柔性基底104之兩端，該 支架即可固定該柔性基底104被彎曲成之曲面形狀，又可 使該柔性基底104被懸於該反應爐内，且該支架需儘量少 地遮擋所述柔性基底104，以避免阻隔熱量或碳源氣體傳 輸至所述催化劑層處，從而影響奈米碳管之生長。該碳 源氣可選用乙炔、乙烯、乙烷等，優選為乙炔等化學性 質較活潑之碳氫化合物，保護氣體可選用氮氣、氨氣或 惰性氣體。 [0024] 該奈米碳管陣列102包括複數奈米碳管，該複數奈米碳管 有序地垂直於柔性基底104排列。該複數奈米碳管基本為 直線狀，並且，當所述柔性基底104被展開成平面形狀之 後，所述複數奈米碳管基本相互平行，且沿基本垂直於 所述柔性基底104之至少一表面之方向生長。所述基本平 行係指該複數奈米碳管中之大部分基本沿同一方向延伸 ，僅有少數奈米碳管隨機排列，這些奈米碳管不會對奈 米碳管陣列1 0 2中大多數奈米碳管之整體取向排列構成明 顯影響。所述基本垂直係指所述複數奈米碳管中之大部 分奈米碳管垂直於所述柔性基底104之至少一表面，僅有 少數奈米碳管並不完全垂直所述柔性基底104，而為近似 垂直，如大於等於80度小於等於100度。通過上述控制生 長條件，該奈米碳管陣列1 0 2中基本不含有雜質，如無定 型碳或殘留之催化劑金屬顆粒等。該奈米碳管陣列中之 奈米碳管彼此之間存在凡德瓦爾力。> [0025] 由於從一個曲面基底，尤其係彎曲成螺旋狀之曲面基底 表面形成之奈米碳管陣列102中拉取奈米碳管膜較為困難 099110663 表單編號A0101 第8頁/共24頁 0992018755-0 201134755 ’故在拉取奈米碳管膜之前，在步驟二中，先將所述已 經生長有奈米碳管陣列1 〇 2之柔性基底1 04從所述反應爐 中取出並展開。 [0026] 所述展開係指將所述被彎曲成曲面形狀之柔性基底1 〇4被 展開成一整體上具有較小彎曲度以利於後續拉膜之形狀 ’優選為展開成一平面形狀’從而使生長於該柔性基底 104表面之奈米碳管陣列ι〇2也被展開成一平面形狀。 [0027] Ο 在步驟三中，請參閱圖3，該奈米碳管片段143由該奈米 碳管陣列102中之一個或相鄰之複數相互平行之一束奈米 ...... ...... .... .... 碳管145組成。該拉仲工具用於從展開之奈米碳管陣列 1 〇 2中選定並拉取該奈米碳管片段i 4 3。該拉神工具優選 為具有一固定寬度之膠帶或表面具有黏膠之硬質基條。 該選定所述奈米碳管片段〗43之過程可似係採用膠帶或硬 質基條之黏膠接觸該奈米碳管陣列丨〇2 ,以使所述奈米碳 [0028] Ο 管片段143黏附於所述膠帶或硬質基條表面。 在步驟四中，通過移動該拉伸工具，拉取所述奈米碳管 片段143。該拉伸工具可逐漸遠離該奈米碳管陣列1〇2移 動，從而以一固定速度拉取該選定之奈米碳管片段。 當該被選定之奈米碳管肢143在拉力仙下沿拉取方向 逐漸脫離柔性基底1G4之同時，由於凡德瓦爾力作用，與 忒選定之奈米碳管片段143相鄰之其他奈米碳管片段首尾 相連地相繼地被拉出，從而形成一連續、均勻之奈米碳 s膜100。該奈米碳管膜1〇〇之寬度可與該選定之奈米碳 官片&143之寬度基本相等。拉出之奈米碳管㈣〇一端 099110663 與所述拉伸工具連接，另—端與所述奈米碳管陣列連 表單編號A0101 第9頁/共24頁 0992018755-0 201134755 接，在奈米碳管膜100與奈米碳管陣列102連接處，所述 奈米碳管膜100與所述柔性基底104之夾角大於等於0度且 小於90度，優選為小於30度。在不斷之拉取奈米碳管膜 100之過程中，維持該夾角小於30度，即基本所有奈米碳 管均沿小於30度之方向被拉出。當奈米碳管陣列102中之 奈米碳管相繼地從奈米碳管陣列102中被拉出時，形成之 奈米碳管膜100與該奈米碳管陣列102之間接觸之位置具 有一界線，該界線隨著奈米碳管陣列102之不斷消耗在柔 性基底表面向與拉膜方向相反之方向不斷移動。優選地 ，該界線始終為一直線，直至所述奈米碳管陣列102中全 部奈米碳管被拉出。 [0029] 此外，上述步驟二和步驟三可同時進行，具體為：首先 局部展開所述柔性基底104，從而局部展開所述奈米碳管 陣列102 ;在該局部展開之奈米碳管陣列102上進行拉膜 ;之後在該拉膜之過程中，所述彎曲成曲面形狀之面狀 柔性基底104被連續地局部展開成平面形狀，以連續地提 供平面形狀奈米碳管陣列1 0 2，從而使奈米碳管膜10 0連 續地從該平面形狀之奈米碳管陣列102中拉出。另，該步 驟二和步驟三也可分開進行，具體為：首先將所述柔性 基底104整體完全展開，從而完全展開所述奈米碳管陣列 102 ;之後再在該整體完全展開之奈米碳管陣列102上拉 膜。本實施例中為該步驟二和步驟三同時進行，具體如 下： [0030] a,提供一固定裝置及一展開工具（圖未示），採用所述 固定裝置固定所述柔性基底104 ; b，採用所述展開工具 099110663 表單編號A0101 第10頁/共24頁 0992018755-0 201134755 夾持所述柔性基底104之一自由端並向所述柔性基底i〇4 之一侧拉伸，使所述柔性基底104局部展開，從而使生長 於該柔性基底104上之奈米碳管陣列102也被局部展開； c，採用所述拉伸工具在所述展開部分之奈米碳管陣列1 〇 2 上拉取奈米碳管膜100。其中，在步驟a中，所述固定裝 置包括兩個相對且間隔設置之卡槽122和一為支撐和固定 該兩個卡槽122之固定架（圖未示），該卡槽122之形狀 可根據所述柔性基底104之曲面形狀而設定，具體為，該Q structure. The macrostructure consists of a complex number: nanocarbon: tube surface::. may be film-like, linear or other shape. In the prior art, a macroscopic membrane structure composed of a plurality of carbon nanotubes is generally referred to as a carbon nanotube, a membrane.: (. Carbon Nano tube Film) ° 3, Feng Chen et al., August 16, 2008 The disclosure of the Taiwan Patent Application Publication No. 200833862 discloses a carbon nanotube film obtained by directly pulling from a carbon nanotube array. The carbon nanotube film has a macroscopic scale and is self-supporting. It includes a plurality of carbon nanotubes connected end to end under the action of Van der Valli. Since the carbon nanotubes in the carbon nanotube film are arranged substantially in the same direction, the carbon nanotube film can better exert various excellent properties such as conductivity and heat conduction in the axial direction of the carbon nanotubes, and has a wide range of properties. Application prospects. [Wake] However, the carbon nanotube film is pulled out from an array of carbon nanotubes, and the area of the film is limited by the size of the carbon nanotube array. The conventional method of forming a carbon nanotube array is mainly a chemical vapor deposition (CVD) method. Chemical vapor phase, special method using a nanoscale transition metal deposited on a growth substrate or its 099110663 Form No. A0101 Page 3 / 24 pages 0992018755-0 201134755 Oxide as a catalyst, pyrolysis of carbon at a fixed temperature The source gas is used to prepare a carbon nanotube array. At present, chemical vapor deposition generally uses a planar shaped hard growth substrate such as a ruthenium substrate. The planar growth of the hard growth substrate is not limited by the size of the reaction chamber, so that the area of the carbon nanotube array grown thereon cannot be made large. Therefore, the width and area of the carbon nanotube film taken from the carbon nanotube array grown on the growth substrate are limited. SUMMARY OF THE INVENTION [0005] In view of the above, it is necessary to provide a method for preparing a carbon nanotube film having a large size. [0006] The present invention provides a method for preparing a carbon nanotube film, a method for preparing a carbon nanotube film, comprising the steps of: forming a carbon nanotube on a surface of a planar flexible substrate curved into a curved shape Arraying; at least partially expanding the planar flexible substrate that is curved into a curved shape to at least partially unfold the carbon nanotube array; contacting the expanded portion of the carbon nanotube array with a stretching tool, thereby A carbon nanotube segment is selected from the carbon nanotube array; and the selected carbon nanotube segment is drawn by the stretching tool to form a carbon nanotube film. [0007] Compared with the prior art, the method for preparing a carbon nanotube film of the present invention has the following advantages: Compared with a conventional hard growth substrate, the flexible substrate can be bent into various shapes and then placed in the same reactor. Medium-growth carbon nanotube array, so that the space inside the reactor can be fully utilized to grow a larger size carbon nanotube array, and then the carbon nanotube film obtained from the carbon nanotube array has Larger area. [Embodiment] 099110663 Form No. A0101 Page 4 of 24 0992018755-0 201134755 [0008] Hereinafter, a method of preparing a carbon nanotube film of an embodiment of the present invention will be described in detail with reference to the accompanying drawings. Referring to FIG. 1 and FIG. 2, a first embodiment of the present invention provides a method for preparing a carbon nanotube film, which includes the following steps: [0010] Step 1: a planar flexible substrate curved into a curved shape Forming a carbon nanotube array 102 on the surface of 104; [0011] Step 2: at least partially expanding the planar flexible substrate 104 that is curved into a curved shape to at least partially expand the carbon nanotube array 102; 0012] Step 3: contacting the expanded portion of the carbon nanotube array 102 with a stretching tool to select a carbon tube segment in the carbon nanotube array 102; and [0013] Step 4: Passing the The drawing tool pulls the selected carbon nanotube segments to form a carbon nanotube film 100. [0014] Each of the above steps will be described in detail below. [0015] In the first step, the carbon nanotube array 102 is formed on the surface of the planar flexible substrate 104 curved into a curved shape by chemical vapor deposition, and the carbon nanotube array 102 is preferably Super-aligned carbon nanotube array 102. In this embodiment, the method for preparing the super-sequential carbon nanotube array 102 specifically includes: [0016] (a) providing a planar flexible substrate 104 curved into a curved shape, the flexible substrate 104 having at least one surface, and Forming a catalyst layer on at least one surface of the flexible substrate 104; (b) using chemical vapor deposition at least 099110663 of the planar flexible substrate 104 Form No. A0101 Page 5 / Total 24 Page 0992018755- 0 201134755 A super-sequential carbon nanotube array 102 is grown on a surface. [0018] In step (a), the material of the flexible substrate 104 is a material that is resistant to high temperatures, may be deformed by bending, and may support the carbon nanotube array 102. [0019] The melting point of the material of the flexible substrate 104 is greater than the growth temperature of the carbon nanotube array 1 〇 2, preferably greater than 500 ° C. The flexible substrate 104 is a planar or sheet-like substrate having a small thickness, and the material thereof may be a metal sheet, a quartz sheet, a tantalum sheet or a ceramic sheet, etc., and the metal sheet may be a molybdenum sheet, a titanium sheet, a zirconium sheet, or a tantalum sheet. Sheets, button pieces, cymbals, tungsten sheets, vanadium sheets or alloy sheets of any combination of the above materials, or stainless steel sheets. The thickness of the flexible substrate 1〇4 is such that the flexible substrate 104 is bent and deformed without being broken, and the smaller the thickness of the flexible substrate 104, the larger the f-bend deformation. If the flexible substrate 104 is a metal piece, the thickness of the flexible substrate 1〇4 may be 3 mm or less and 0.01 mm or more. If the flexible substrate 104 is a crotch piece, a quartz piece, and a ceramic piece, the flexibility is The thickness of the substrate 1〇4 may be less than or equal to 0.3 mm, preferably less than or equal to 0.1 mm and greater than or equal to 1 μm. In this embodiment, the material of the flexible substrate 1〇4 is a 50 micron quartz piece. Further, at least one surface of the flexible substrate 1〇4 is preferably a smooth surface. [0020] The planar or sheet-like flexible substrate 1〇4 can be bent into various curved shapes, and the curved-shaped flexible substrate 1〇4 can also be developed into a planar shape without being broken. The curved shape may be a cylindrical shape, a spiral shape, or other regular or irregular shape. Specifically, the curved surface shape can be regarded as a surface formed by moving a straight line segment having a fixed length along a curved trajectory. This moving straight line segment is called the straight busbar of the facet, and the fixed curve is called the guideline of the facet. When the guideline is rounded, the resulting kneading surface is called a cylindrical surface. When the alignment is 0992018755-0 099110663 Form No. A0101 Page 6 of 24 201134755 The spiral is obtained as a spiral cylinder. In this embodiment, the flexible substrate 104 is bent into a spiral cylinder surface, which can be regarded as a plane in which a straight line segment having a fixed width is moved parallel along a plane spiral track, and the straight line segment is perpendicular to a plane where the plane spiral is located. . The spiral flexible substrate 104 has a gap defined by the spiral flexible substrate 104, which is a helical gap. The width of the gap is based on the south of the subsequently grown carbon nanotube array 102. [0021] The material of the catalyst layer may be selected from iron (Fe), cobalt (Co), nickel (Ni) or oxides of the metals, and the catalyst layer may be thermally deposited, electron beam deposited, vapor deposited. Or a method such as magnetron sputtering is formed on at least one surface of the flexible substrate 104. The thickness of the catalyst layer can be selected according to actual needs, and is preferably from 1 nm to 50 nm. The catalyst layer may also be formed simultaneously on opposite surfaces of the flexible substrate 104 such that the carbon nanotube array 102 is formed on both opposing surfaces. In this embodiment, the catalyst layer is formed on one surface of the flexible substrate 104. The material of the catalyst layer is iron and has a thickness of 5 nm.步骤 [0022] In the step (b), the planar flexible substrate 104 having the above-mentioned surface formed with a catalyst layer and bent into a curved shape is annealed in air at 300 ° C to 900 ° C (eg, 700 ° C) for about 30 [0020] Minutes ~ 90 minutes; and the flexible substrate 104 is placed in a reactor, heated to 500 ° C ~ 900 ° C (such as 740 ° C) in a protective gas atmosphere, and then reacted with carbon source gas for about 5 minutes ~ After 30 minutes, a super-aligned carbon nanotube array 102 was grown. The reaction furnace 'may be a tubular reaction furnace. When the flexible substrate 104 is bent into a spiral or a cylindrical shape, the axial direction of the spiral or cylindrical flexible substrate 104 may be parallel to the axis of the tubular reactor. The direction is set in the tubular reactor. 099110663 Form No. A0101 Page 7 of 24 0992018755-0 [0023] Further, the two ends of the flexible substrate 104 can be fixed by a bracket, which can fix the curved shape of the flexible substrate 104 to be curved. The flexible substrate 104 can be suspended in the reaction furnace, and the bracket needs to cover the flexible substrate 104 as little as possible to avoid the amount of heat insulation or carbon source gas from being transmitted to the catalyst layer, thereby affecting the nanocarbon. The growth of the tube. The carbon source gas may be selected from the group consisting of acetylene, ethylene, ethane, etc., preferably a chemically active hydrocarbon such as acetylene, and the protective gas may be nitrogen, ammonia or an inert gas. [0024] The carbon nanotube array 102 includes a plurality of carbon nanotubes that are sequentially aligned perpendicular to the flexible substrate 104. The plurality of carbon nanotubes are substantially linear, and after the flexible substrate 104 is unfolded into a planar shape, the plurality of carbon nanotubes are substantially parallel to each other and are substantially perpendicular to at least one of the flexible substrates 104. Growth in the direction of the surface. The substantially parallel means that most of the plurality of carbon nanotubes extend substantially in the same direction, and only a few carbon nanotubes are randomly arranged, and the carbon nanotubes are not large in the carbon nanotube array 1 0 2 The overall orientation of most carbon nanotubes constitutes a significant impact. The substantially vertical means that a majority of the carbon nanotubes in the plurality of carbon nanotubes are perpendicular to at least one surface of the flexible substrate 104, and only a few of the carbon nanotubes are not completely perpendicular to the flexible substrate 104, It is approximately vertical, such as greater than or equal to 80 degrees and less than or equal to 100 degrees. The carbon nanotube array 102 contains substantially no impurities such as amorphous carbon or residual catalyst metal particles, etc., by controlling the growth conditions described above. The carbon nanotubes in the array of carbon nanotubes have a van der Waals force between each other. > [0025] It is difficult to pull a carbon nanotube film from a curved substrate, especially a carbon nanotube array 102 formed by bending a curved curved substrate surface. Form No. A0101 Page 8 of 24 0992018755-0 201134755 'Before pulling the carbon nanotube film, in step two, the flexible substrate 104 having grown the carbon nanotube array 1 〇 2 is taken out from the reaction furnace and unfolded. . [0026] The unfolding means that the flexible substrate 1 〇 4 bent into a curved shape is unfolded to have a small curvature as a whole to facilitate the shape of the subsequent drawn film 'preferably into a planar shape' to grow The carbon nanotube array ι 2 on the surface of the flexible substrate 104 is also expanded into a planar shape. [0027] 步骤 In step 3, referring to FIG. 3, the carbon nanotube segment 143 is one of the carbon nanotube arrays 102 or adjacent to each other in a plurality of mutually parallel bundles of nanometers... ..... .... Carbon tube 145 composition. The pulling tool is used to select and pull the carbon nanotube segment i 4 3 from the unfolded carbon nanotube array 1 〇 2 . The pull tool is preferably a tape having a fixed width or a hard base having a surface with an adhesive. The process of selecting the carbon nanotube segment 43 may be performed by contacting the carbon nanotube array 丨〇2 with a tape or a hard-based adhesive to make the nanocarbon [0028] 片段 tube segment 143 Adhered to the surface of the tape or rigid strip. In step four, the carbon nanotube section 143 is pulled by moving the stretching tool. The stretching tool can be moved away from the carbon nanotube array 1〇2 to pull the selected carbon nanotube segments at a fixed speed. When the selected carbon nanotube limb 143 gradually disengages from the flexible substrate 1G4 in the pulling direction under the pulling force, other nanometer adjacent to the selected carbon nanotube segment 143 due to the van der Waals force acts. The carbon tube segments are successively pulled out end to end to form a continuous, uniform nanocarbon s film 100. The width of the carbon nanotube film may be substantially the same as the width of the selected nanocarbon sheet & 143. Pull out the carbon nanotubes (four) one end of the 01099110663 is connected with the stretching tool, and the other end is connected with the carbon nanotube array form No. A0101 Page 9 / 24 pages 0992018755-0 201134755 The carbon nanotube film 100 is joined to the carbon nanotube array 102, and the angle between the carbon nanotube film 100 and the flexible substrate 104 is greater than or equal to 0 degrees and less than 90 degrees, preferably less than 30 degrees. During the continuous pulling of the carbon nanotube film 100, the angle is maintained at less than 30 degrees, that is, substantially all of the carbon nanotubes are pulled out in a direction less than 30 degrees. When the carbon nanotubes in the carbon nanotube array 102 are successively pulled out from the carbon nanotube array 102, the contact between the formed carbon nanotube film 100 and the carbon nanotube array 102 has A boundary line that continuously moves along the surface of the flexible substrate in a direction opposite to the direction of the film as the carbon nanotube array 102 is continuously consumed. Preferably, the boundary is always in a straight line until all of the carbon nanotubes in the array of carbon nanotubes 102 are pulled out. [0029] In addition, the above steps 2 and 3 may be performed simultaneously, specifically: firstly, the flexible substrate 104 is partially unfolded, thereby partially unfolding the carbon nanotube array 102; and the partially expanded carbon nanotube array 102 is deployed. The film is stretched thereon; then, during the film drawing, the planar flexible substrate 104 curved into a curved shape is continuously partially expanded into a planar shape to continuously provide the planar shape carbon nanotube array 1 0 2, Thereby, the carbon nanotube film 100 is continuously pulled out from the planar carbon nanotube array 102. In addition, the second step and the third step may also be performed separately, specifically: firstly, the flexible substrate 104 is completely unfolded, thereby fully unfolding the carbon nanotube array 102; and then the carbon carbon is fully deployed in the whole. The tube array 102 is pulled up. In this embodiment, the second step and the third step are performed simultaneously, as follows: [0030] a, a fixing device and a deployment tool (not shown) are provided, and the flexible substrate 104 is fixed by the fixing device; b, Using the unfolding tool 099110663 Form No. A0101 Page 10 / Total 24 page 0992018755-0 201134755 Clamping one of the free ends of the flexible substrate 104 and stretching to one side of the flexible substrate i〇4, making the flexibility The substrate 104 is partially unfolded such that the carbon nanotube array 102 grown on the flexible substrate 104 is also partially expanded; c, the stretching tool is used to pull up the carbon nanotube array 1 〇 2 of the expanded portion The carbon nanotube film 100 is taken. In the step a, the fixing device includes two opposite and spaced apart card slots 122 and a fixing frame (not shown) for supporting and fixing the two card slots 122. The shape of the card slot 122 can be Setting according to the curved shape of the flexible substrate 104, specifically, the
卡槽122之截面形狀與所述柔性基底1〇4之垂直於軸線方 向之橫截面之形狀相同，本實施例申，所述卡槽122之截 面形狀為螺旋形狀。採用該卡檜122固定所述螺旋狀柔性 基底104之方式具體為，將所述螺旋狀之柔性基底1〇4之 沿軸線方向之兩端分別活動設置在該兩個卡槽122中，由 於該兩個卡槽122之形狀也為螺旋形狀，且該兩個卡槽 122相對且間隔設置，從而可使該螺旋狀柔性基底104可 被固定在其中’且除兩端被卡槽122.卡:設之外，其他部分 均懸空設置。在步驟b中，在採用所述展開工具拉伸所述 柔性基底104之過程中，由於該柔性基底1〇4之兩端被活 動設置在所述兩個卡槽122中，從而可使所述柔性基底 104在展開工具之拉力作用下，逐漸沿著該卡槽122之螺 旋路禮移出並展開。在步驟c中，在此拉膜過程中，隨著 被形成之奈米碳管膜1〇〇與奈米碳管陣列1〇2之界線不斷 099110663 移動，所述柔性基底104從所述卡槽122中逐漸移出且展 開，且該展開之速度與奈米碳管陣列102消耗之速度（界 線之移動速度）基本相同，以實現連續地拉膜。另外， 在該拉膜過程中，優選為，所述拉取方向與所述展開方 表翠編號A0101 第11頁/共24頁 0992018755-0 201134755 [0031] [0032] [0033] 向基本相同。 進一步地’在所述奈米碳管逐漸脫離所述柔性基底1〇4並 形成奈米碳管膜100之同時，可逐漸捲繞該奈米碳管已經 脫離之柔性基底104。 可以理解，當柔性基底104被彎曲成曲面形狀並在反應室 内形成奈米碳管陣列102，尤其係彎曲成螺旋狀時，該柔 性基底104之面積可能很大。將大面積之柔性基底1〇4完 全展開成一平面形狀，需要佔用較大空間，且不便於工 業連續化生產。故，通過將上述廉開柔性基底104之過程 ......... ...·: ..· 與拉取奈米碳管膜同時進行之方式，可儘量節省拉取奈 米碳管膜100過程所需要之空間，僅展開所需要之部分柔 性基底104即可。 進一步地，在拉取所述奈米碳管膜10〇之同時，為便於保 存，可將拉取出之奈米碳管膜1〇〇覆蓋於一基底表面。該 基底優選為柔性之層狀基底11〇。將所述奈米碳管膜1〇〇 覆蓋於該層狀基底110之過程可與所述展開柔性基底1〇4 之過程及拉取奈米碳管膜1〇〇之過程同時進行，具體可包 括： [0034] a.提供1柔性之層狀基底110，該層狀基底110具有一第 一表面112及一第二表面114 ; [0035] b.將拉取獲得之奈米碳管膜100與拉伸工具連接之一端貼 附於層狀基底11Q之第一表面112 ; [0036] 099110663 c·通過所述層狀基底11Q之運動，帶動所述奈米碳管膜 100運動，從而使奈米碳管膜1〇〇連續地從奈米碳管陣列 表翠編號A0101 第12頁/共24頁 0992018755-0 201134755 [0037] [0038] Ο [0039] ❹ [0040] 102中被拉出，並貼附於該層狀基底110之第一表面112 9 該層狀基底110可為一聚對苯二甲酸（PET)類塑膠，為 方便使用並減小該層狀基底110之佔用空間，可進一步將 該層狀基底110捲繞於一第一卷轴106上。 進一步地，在將所述奈米碳管膜100貼附於所述層狀基底 110之前，採用鐳射照射所述奈米碳管膜100，通過該鐳 射照射，可使所述奈米碳管膜100之厚度減薄，從而提高 了該奈米碳管膜100之透明度。具體原因為，由於奈米碳 管對鐳射具有較好吸收特性，使得該奈米碳管膜100中吸 收較多熱量之部分奈米碳管被燒壞。 進一步地，為使所述奈米碳管膜100可以牢固地貼附在所 述層狀基底110之第一表面112，在該層狀基底110脫離 第一卷軸106之後，且在貼附所述奈米碳管膜100之前， 在所述層狀基底110之第一表面112上均勻地塗覆一黏膠 層（圖未示），該黏膠層可為普通之黏膠或者紫外線固 化膠。此外，當奈米碳管膜100貼附於所述層狀基底100 上之後，可進一步熱壓處理所述貼附有奈米碳管膜100之 層狀基底110，或者採用紫外線照射該貼附於層狀基底上 之奈米碳管膜以使所述黏膠層固化。 其中，所述熱壓之方法具體可為：提供兩個分別位於所 述層狀基底110之兩侧且相對設置之磙子116，且該其中 一個磙子116與所述層狀基底110接觸，另一個磙子116 與所述奈米碳管膜100接觸，在該兩個磙子116轉動之過 099110663 表單編號A0101 第13頁/共24頁 0992018755-0 201134755 程中，該兩個礎子11 6不僅對所述層狀基底11 0和奈米碳 管膜100同時施加一固定之壓力，且也可對所述層狀基底 110和奈米碳管膜100施加一沿拉伸方向之力，同時在該 過程中，可加熱所述黏膠層使所述黏膠層固化，從而最 終使奈米碳管膜100平整地固定在所述層狀基底110上。 [0041] 進一步地，可提供一第二卷軸108，在拉取所述奈米碳管 膜100並覆蓋在層狀基底110之同時，將覆蓋有奈米碳管 膜100之層狀基底110捲繞在該第二卷軸108上。為避免 該捲繞之層狀基底11 0之第二表面黏附所述奈米碳管膜 100，該層狀基底110之第二表面114可進一步具有矽、 石蠟、特氟隆或其他不乾膠用底膜塗層材料，從而使所 述層狀基底110之第一表面112對奈米碳管之黏結力可遠 大於該第二表面114對奈米碳管之黏結力，從而使捲繞在 該第二卷軸108上之覆蓋有奈米碳管膜100之層狀基底 110可根據需要被展開。 [0042] 請參閱圖4，所述奈米碳管膜100係由若干奈米碳管組成 之自支撐結構。所述若干奈米碳管為沿該奈米碳管膜100 之長度方向擇優取向排列。所述擇優取向係指在奈米碳 管膜100中大多數奈米碳管之整體延伸方向基本朝同一方 向。而且，所述大多數奈米碳管之整體延伸方向基本平 行於奈米碳管膜100之表面。進一步地，所述奈米碳管膜 100中多數奈米碳管係通過凡德瓦爾力首尾相連。具體地 ，所述奈米碳管膜100中基本朝同一方向延伸之大多數奈 米碳管中每一奈米碳管與在延伸方向上相鄰之奈米碳管 通過凡德瓦爾力首尾相連。當然，所述奈米碳管膜100中 099110663 表單編號Α0101 第14頁/共24頁 0992018755-0 201134755 存在少數偏離該延伸方向之奈米碳管，這些奈米碳管不 會對奈米碳管膜100中大多數奈米碳管之整體取向排列構 成明顯影響。所述自支撐為奈米碳管膜100不需要大面積 之載體支撐，而只要相對兩邊提供支撐力即能整體上懸 空而保持自身膜狀狀態，即將該奈米碳管膜100置於（或 固定於）間隔一固定距離設置之兩個支撐體上時，位於 兩個支撐體之間之奈米碳管膜100能夠懸空保持自身膜狀 狀態。所述自支撐主要通過奈米碳管膜100中存在連續之 通過凡德瓦爾力首尾相連延伸排列之奈米碳管而實現。 〇 具體地，所述奈米碳管膜1〇〇中基本朝同一方向延伸之多 數奈米碳管，並非絕對之直線狀，可以適當之彎曲；或 者並非完全按照延伸方向上排列，可以適當之偏離延伸 方向。故，不能排除奈米碳管膜100之基本朝同一方向延 伸之多數奈米碳管中並列之奈米碳管之間可能存在部分 接觸。 [0043] 在宏觀上，由於該奈米碳管膜100中大多數奈米碳管沿奈 n 米碳管膜100長度方向延伸，該奈米碳管膜100長度方向 〇 具有比寬度方向明顯優異之導電及導熱性能，另外，由 於多數奈米碳管彼此通過凡德瓦爾力首尾相連，在宏觀 上該奈米碳管膜100為一自支撐結構。 [0044] 具體地，每一奈米碳管膜100包括複數連續且定向排列之 奈米碳管片段143。該複數奈米碳管片段143通過凡德瓦 爾力首尾相連。每一奈米碳管片段143由複數相互平行之 奈米碳管145組成，該複數相互平行之奈米碳管145通過 凡德瓦爾力緊密結合。該奈米碳管片段143具有任意之長 099110663 表單編號A0101 第15頁/共24頁 0992018755-0 201134755 [0045] [0046] [0047] [0048] [0049] 099110663 度、厚度、均勻性及形狀。 所述奈米碳管膜100之厚度為0.5奈米〜100微米，長度與 奈米碳管陣列102之面積有關。該奈米碳管膜100之比表 面積可大於100平方米每克。該奈米碳管膜100具有較好 之透光性’可見光透過率可以達到75%以上。 該製備奈米碳管膜之方法具有以下優點：第一，與傳統 之硬質生長基底相比，該柔性基底可被彎曲成各種形狀 之後再設置在相同之反應爐中生長奈米碳管陣列，從而 可充分利用反應爐内之空間，生長出較大尺寸之奈米碳 管陣列，進而使從該奈米碳管陣列中拉取獲得之奈米碳 管媒具有較大之面積。 第二’由於該柔性基底具有柔性，從而可被展開成一平 面形狀，相較於直接在一複雜之曲面狀基底上拉取奈米 礙管膜，先將曲面基底展開再進行拉取奈米碳管膜之方 式更為簡單易行。 綜上所述，本發明確已符合發明專利之要件，遂依法提 出專利申請。惟’以上所述者僅為本發明之較佳實施方 式，自不能以此限制本案之申請專利範圍。舉凡熟悉本 案技藝之人士援依本發明之精神所作之等效修飾或變化 ’皆應涵蓋於以下申請專利範圍内。 【圖式簡單說明】 圖1為本發明第一實施例提供之奈米碳管膜之製備方法流 程圖。 圖2為本發明第一實施例提供之奈米碳管膜之製備方法過 表單編號A0101 第16頁/共24頁 0992018755-0 [0050] 201134755 程示意圖。 [0051] 圖3為本發明第一實施例奈米碳管片段之結構示意圖。 [0052] 圖4為本發明第一實施例奈米碳管膜之掃描電鏡照片。 【主要元件符號說明】 [0053] 奈米碳管膜 ：100 [0054] 奈米碳管陣列： 102 [0055] 柔性基底： 104 [0056] 第一卷軸： 106 [0057] 第二卷軸： 108 [0058] 層狀基底： 110 [0059] 第一表面： 112 [0060] 第二表面： 114 [0061] 磙子：116 [0062] 卡槽：122 [0063] 奈米碳管片段： 143 [0064] 奈米碳管： 145 099110663 表單編號A0101 第17頁/共24頁 0992018755-0The cross-sectional shape of the card slot 122 is the same as the cross-sectional shape of the flexible substrate 1〇4 perpendicular to the axial direction. In this embodiment, the cross-sectional shape of the card slot 122 is a spiral shape. The manner in which the spiral flexible substrate 104 is fixed by the latch 122 is specifically that the two ends of the spiral flexible substrate 1 4 in the axial direction are respectively disposed in the two card slots 122, because The two card slots 122 are also in the shape of a spiral, and the two card slots 122 are opposite and spaced apart so that the spiral flexible substrate 104 can be fixed in it and the two ends are surrounded by the card slot 122. In addition to the settings, the other parts are suspended. In step b, during the stretching of the flexible substrate 104 by the deployment tool, since both ends of the flexible substrate 1〇4 are movably disposed in the two card slots 122, the The flexible substrate 104 is gradually removed and deployed along the spiral path of the card slot 122 under the pulling force of the deployment tool. In step c, during the film drawing process, the flexible substrate 104 moves from the card slot as the boundary between the formed carbon nanotube film 1〇〇 and the carbon nanotube array 1〇2 is continuously moved 099110663. The 122 is gradually removed and unfolded, and the speed of the unfolding is substantially the same as the speed at which the carbon nanotube array 102 is consumed (the moving speed of the boundary) to achieve continuous film pulling. In addition, in the film drawing process, it is preferable that the drawing direction is substantially the same as the unfolding surface number A0101 page 11 / 24 pages 0992018755-0 201134755 [0031] [0032]. Further, while the carbon nanotube is gradually detached from the flexible substrate 1〇4 and the carbon nanotube film 100 is formed, the flexible substrate 104 from which the carbon nanotube has been detached can be gradually wound. It will be appreciated that the area of the flexible substrate 104 may be large when the flexible substrate 104 is curved into a curved shape and the carbon nanotube array 102 is formed in the reaction chamber, particularly when curved into a spiral shape. Fully expanding a large-area flexible substrate 1〇4 into a planar shape requires a large space and is inconvenient for industrial continuous production. Therefore, by the process of the above-mentioned low-open flexible substrate 104, and the pulling of the carbon nanotube film simultaneously, the pulling of the nanometer can be saved as much as possible. The space required for the carbon nanotube film 100 process can be expanded only by a portion of the flexible substrate 104 required. Further, while the carbon nanotube film 10 is being pulled, the drawn carbon nanotube film may be covered on the surface of a substrate for convenience of storage. The substrate is preferably a flexible layered substrate 11〇. The process of covering the carbon nanotube film 1 to the layered substrate 110 may be performed simultaneously with the process of unfolding the flexible substrate 1〇4 and the process of drawing the carbon nanotube film 1〇〇, specifically The method includes: [0034] a providing a flexible layered substrate 110 having a first surface 112 and a second surface 114; [0035] b. The carbon nanotube film 100 to be drawn One end of the connection with the stretching tool is attached to the first surface 112 of the layered substrate 11Q; [0036] 099110663 c. The movement of the layered substrate 11Q drives the carbon nanotube film 100 to move, thereby enabling The carbon nanotube film 1〇〇 is continuously pulled out from the carbon nanotube array table No. A0101, page 12/24 pages 0992018755-0 201134755 [0037] [0040] 00 [0040] 102, And attached to the first surface 112 9 of the layered substrate 110. The layered substrate 110 can be a poly (PET) plastic, which is convenient for use and reduces the occupied space of the layered substrate 110. The layered substrate 110 is further wound on a first reel 106. Further, before the carbon nanotube film 100 is attached to the layered substrate 110, the carbon nanotube film 100 is irradiated with laser light, and the carbon nanotube film can be made by the laser irradiation. The thickness of 100 is reduced, thereby increasing the transparency of the carbon nanotube film 100. The specific reason is that a part of the carbon nanotubes in the carbon nanotube film 100 that absorbs more heat is burned out because of the better absorption characteristics of the carbon nanotubes. Further, in order to enable the carbon nanotube film 100 to be firmly attached to the first surface 112 of the layered substrate 110, after the layered substrate 110 is detached from the first reel 106, and attached Before the carbon nanotube film 100, an adhesive layer (not shown) is uniformly coated on the first surface 112 of the layered substrate 110, and the adhesive layer may be a common adhesive or a UV-curable adhesive. Further, after the carbon nanotube film 100 is attached to the layered substrate 100, the layered substrate 110 to which the carbon nanotube film 100 is attached may be further hot-pressed, or the attachment may be irradiated with ultraviolet rays. A carbon nanotube film on the layered substrate to cure the adhesive layer. Specifically, the hot pressing method may be: providing two dice 116 respectively disposed on opposite sides of the layered substrate 110 and oppositely disposed, and one of the dice 116 is in contact with the layered substrate 110, Another dice 116 is in contact with the carbon nanotube film 100, and the two dice 116 are rotated by 099110663 Form No. A0101 Page 13 of 24 0992018755-0 201134755, the two bases 11 6 not only applying a fixed pressure to the layered substrate 110 and the carbon nanotube film 100, but also applying a force in the stretching direction to the layered substrate 110 and the carbon nanotube film 100. At the same time, in the process, the adhesive layer can be heated to cure the adhesive layer, thereby finally fixing the carbon nanotube film 100 to the layered substrate 110 in a flat manner. [0041] Further, a second reel 108 may be provided, and the layered substrate 110 covered with the carbon nanotube film 100 is rolled while the carbon nanotube film 100 is drawn and covered on the layered substrate 110. Wrap around the second reel 108. In order to prevent the second surface of the wound layered substrate 110 from adhering to the carbon nanotube film 100, the second surface 114 of the layered substrate 110 may further have bismuth, paraffin, Teflon or other stickers. The base film coating material is used, so that the bonding force of the first surface 112 of the layered substrate 110 to the carbon nanotubes can be much greater than the bonding force of the second surface 114 to the carbon nanotubes, thereby winding the The layered substrate 110 on the second reel 108 covered with the carbon nanotube film 100 can be unrolled as needed. Referring to FIG. 4, the carbon nanotube film 100 is a self-supporting structure composed of a plurality of carbon nanotubes. The plurality of carbon nanotubes are arranged in a preferred orientation along the length of the carbon nanotube film 100. The preferred orientation means that the majority of the carbon nanotubes in the carbon nanotube film 100 extend substantially in the same direction. Moreover, the overall direction of extension of the majority of the carbon nanotubes is substantially parallel to the surface of the carbon nanotube film 100. Further, most of the carbon nanotubes in the carbon nanotube film 100 are connected end to end by Van der Waals force. Specifically, each of the carbon nanotubes in the majority of the carbon nanotubes 100 extending in the same direction and the carbon nanotubes adjacent in the extending direction are connected end to end by Van der Waals force . Of course, the carbon nanotube film 100 is 099110663 Form No. 1010101 Page 14 / Total 24 Page 0992018755-0 201134755 There are a few carbon nanotubes deviating from the extending direction, these carbon nanotubes will not be on the carbon nanotubes. The overall orientation of the majority of the carbon nanotubes in film 100 constitutes a significant influence. The self-supporting carbon nanotube film 100 does not require a large-area carrier support, but can maintain a self-membrane state as long as the support force is provided on both sides, that is, the carbon nanotube film 100 is placed (or When fixed to two supports disposed at a fixed distance apart, the carbon nanotube film 100 located between the two supports can be suspended to maintain a self-film state. The self-supporting is mainly achieved by the presence of a continuous carbon nanotube in the carbon nanotube film 100 which is continuously connected by van der Waals force. Specifically, a plurality of carbon nanotubes extending substantially in the same direction in the carbon nanotube film are not absolutely linear, and may be appropriately bent; or may not be arranged completely in the extending direction, and may be appropriately Deviate from the direction of extension. Therefore, it is not possible to exclude partial contact between the carbon nanotubes juxtaposed in the majority of the carbon nanotubes of the carbon nanotube film 100 which extend substantially in the same direction. [0043] Macroscopically, since most of the carbon nanotubes in the carbon nanotube film 100 extend along the length direction of the carbon nanotube film 100, the length of the carbon nanotube film 100 is significantly better than the width direction. Conductive and thermal conductivity, in addition, since most of the carbon nanotubes are connected end to end by Van der Waals force, the carbon nanotube film 100 is macroscopically self-supporting. Specifically, each of the carbon nanotube films 100 includes a plurality of continuous and aligned carbon nanotube segments 143. The plurality of carbon nanotube segments 143 are connected end to end by Van der Valli. Each of the carbon nanotube segments 143 is composed of a plurality of carbon nanotubes 145 which are parallel to each other, and the plurality of mutually parallel carbon nanotubes 145 are tightly bonded by van der Waals force. The carbon nanotube segment 143 has any length 099110663 Form No. A0101 Page 15 / Total 24 Page 0992018755-0 201134755 [0049] [0049] [0049] 099110663 degrees, thickness, uniformity and shape . The carbon nanotube film 100 has a thickness of from 0.5 nm to 100 m and a length related to the area of the carbon nanotube array 102. The specific surface area of the carbon nanotube film 100 can be greater than 100 square meters per gram. The carbon nanotube film 100 has a good light transmittance, and the visible light transmittance can be 75% or more. The method for preparing a carbon nanotube film has the following advantages: First, the flexible substrate can be bent into various shapes and then placed in the same reactor to grow a carbon nanotube array, compared to a conventional hard growth substrate. Therefore, the space inside the reactor can be fully utilized to grow a larger size carbon nanotube array, and the nanocarbon tube obtained by drawing the carbon nanotube array has a larger area. Secondly, because the flexible substrate has flexibility, it can be unfolded into a planar shape. Compared with directly pulling a nano tube film on a complicated curved substrate, the curved substrate is first unfolded and then the nano carbon is pulled. The way of the membrane is simpler and easier. In summary, the present invention has indeed met the requirements of the invention patent, and the patent application is filed according to law. However, the above description is only a preferred embodiment of the present invention, and it is not possible to limit the scope of the patent application of the present invention. Equivalent modifications or variations made by persons skilled in the art in light of the present invention are intended to be included within the scope of the following claims. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a flow chart showing a method of preparing a carbon nanotube film according to a first embodiment of the present invention. 2 is a schematic diagram of a method for preparing a carbon nanotube film according to a first embodiment of the present invention. Form No. A0101, page 16 of 24 0992018755-0 [0050] 201134755. 3 is a schematic structural view of a carbon nanotube segment according to a first embodiment of the present invention. 4 is a scanning electron micrograph of a carbon nanotube film according to a first embodiment of the present invention. [Main component symbol description] [0053] Nano carbon nanotube film: 100 [0054] Carbon nanotube array: 102 [0055] Flexible substrate: 104 [0056] First reel: 106 [0057] Second reel: 108 [ 0058] Layered substrate: 110 [0059] First surface: 112 [0060] Second surface: 114 [0061] Tweezers: 116 [0062] Card slot: 122 [0063] Carbon nanotube segment: 143 [0064] Carbon nanotubes: 145 099110663 Form No. A0101 Page 17 of 24 0992018755-0