200920689 .九、發明說明： 【發明所屬之技術領域】 本發明涉及一碳納米管薄膜的製備裝置及其製備方 法。 【先前技術】 奈米碳管係九十年代初才發現的一種新型一維奈米材200920689. IX. Description of the Invention: [Technical Field] The present invention relates to a device for preparing a carbon nanotube film and a method for preparing the same. [Prior Art] A new type of nano-dimensional material that was discovered in the early 1990s.
料（請參見 “Helical microtubules of graphitic carbon”，SMaterial (see "Helical microtubules of graphitic carbon", S
Iijima ’ Nature ’ vol.354，P56(1991))。奈米石炭管的特殊結 構决疋了其具有特殊的性質’如向抗張強度和高熱穩定 性，P逍者奈米石反管螺旋方式的變化’奈来碳管可呈現出金 屬性或半導體性等。由於奈米碳管具有理想的一維結構以 及在力學、電學、熱學等領域優良的性質，其在材料科學、 化學、物理學等交叉學科領域已展現出廣闊的應用前景， 在科學研究以及產業應用上也受到越來越多的關注。 雖然奈米碳管性能優異’具有廣泛的應用，但是一般 I^情況下製備得到的奈米碳管為顆粒狀或粉末狀，這對人們 的應用造成了很多不便。為便於應用，需將奈米碳管制成 奈米碳管薄膜。 先前的製備奈米碳管薄膜的方法主要包括：直接生長 法；喷塗法或朗繆爾.布洛節塔（Langmuir Blodgett，LB)法。 其中，直接生長法一般通過控制反應條件，如以硫磺作為 添加劑或設置多層催化劑等，通過化學氣相沉積法直接生 長得到奈米碳管薄膜結構。喷塗法一般通過將奈米碳管粉 末形成水性溶液並塗覆於一基材表面，經乾燥後形成奈米 7 200920689 碳管薄膜結構。然而，通過直接生長法或噴塗法獲得的奈 米碳管薄膜結構中，奈米碳管往往容易聚集成團導致薄膜 厚度不均。 LB法一般通過將一奈米碳管溶液混入另一具有不同 密度之溶液（如有機溶劑）中，利用分子自組裝運動，奈Iijima ’ Nature ’ vol. 354, P56 (1991)). The special structure of the carboniferous tube of the nanometer is determined by its special properties such as tensile strength and high thermal stability, and the change of the hemispherical anti-tubular helix of the P-nanocarbon can be metallic or semi-conducting. Sex and so on. Because carbon nanotubes have an ideal one-dimensional structure and excellent properties in the fields of mechanics, electricity, heat, etc., they have shown broad application prospects in the fields of materials science, chemistry, physics, etc., in scientific research and industry. Applications are also receiving more and more attention. Although the performance of the carbon nanotubes is excellent, it has a wide range of applications, but the carbon nanotubes prepared in the general case are granular or powdery, which causes a lot of inconvenience to people's applications. For ease of application, the carbon nanotubes are made into a carbon nanotube film. Previous methods for preparing carbon nanotube films mainly include: direct growth method; spray method or Langmuir Blodgett (LB) method. Among them, the direct growth method generally obtains a carbon nanotube film structure by controlling the reaction conditions, such as using sulfur as an additive or a multilayer catalyst, and directly growing by chemical vapor deposition. The spraying method generally forms a carbon nanotube film structure by forming an aqueous solution of the carbon nanotube powder and coating it on a surface of a substrate, and drying to form a carbon nanotube film structure. However, in the carbon nanotube film structure obtained by the direct growth method or the spray method, the carbon nanotubes tend to aggregate easily, resulting in uneven thickness of the film. The LB method generally utilizes molecular self-assembly motion by mixing a carbon nanotube solution into another solution having a different density (such as an organic solvent).
米/炭管浮出溶液表面形成奈米碳管薄膜結構（請參IThe surface of the rice/carbon tube floats out of the solution to form a carbon nanotube film structure (please refer to I)
Homogeneous and structurally controlled thin films of smgle-wall carbon nanotubes by the Langmuir-Blodgett technique55 Ύ.Κιιη Synthetic metals ύ〇1.135 ^747(2003)) ° 通過LB法製備得到的奈米碳管薄膜結構一般為均勻網狀 結構’奈米碳管分散均勾，不團聚。但，奈米碳管在薄膜 中仍然為無序排列’不利於充分發揮奈米碳管的性能，其 應用仍然受到限制。Homogeneous and structurally controlled thin films of smgle-wall carbon nanotubes by the Langmuir-Blodgett technique55 Ύ.Κιιη Synthetic metals ύ〇1.135 ^747(2003)) ° The structure of the carbon nanotube film prepared by the LB method is generally a uniform network The structure 'nano carbon tube is scattered and not agglomerated. However, the carbon nanotubes are still disorderly arranged in the film, which is not conducive to the full performance of the performance of the carbon nanotubes, and its application is still limited.
另外， 驗室階段， 續化生產。 上述幾種製備奈米碳管薄膜的方法，均處於實 試驗條件要求較高，操作複雜，且無法實現連 借古2確有必要提供—種奈米碳管薄膜的製備裝置及製 太二，作簡早，可以較大批量的生產奈米碳管薄膜’ :不未奴管在薄膜中均句分散且擇 【發明内容】 〜 牛勺：種奈米碳管薄膜的製備裝置，包括一樣品台，進一 条供給裝置、一載物裝置及-拉伸裝置依次設 琴載Sr側’其_絲條供給u與該樣品台相鄰， ”載物裝置設置在該基條供給裝置和該拉㈣置之間。 8 200920689 —一種製備奈米碳f薄膜的方法，包括：提供一奈米碳 &障歹成於基底上，將該基底固定於樣品台上；從上述 奈米破管陣列預拉出—段奈米石炭管薄m，將此奈米碳管薄 膜一端_於基條供給裝置提供的第—基條上；將上述第 一基條固定於拉伸裝置上，拉伸上述奈米碳管薄膜；將夺 米碳管薄膜粘附於基條供給裝置提供的第二基條上；提供 撑體於載物台上，將第一基條與第二基條之間的奈米 碳管薄膜枯附於支撐體上；在第—基條與支撐體之間及第 二基條與支撐體之間截斷奈米碳管薄膜。 ，與先前技術相比較，所述的奈米碳管薄膜製備裝置及 其，備m過電腦程式控料可以實現半自動化地大 批里連績地生產奈米碳管薄膜。另夕卜，由於利用機械拉力 ^奈米碳管陣列中直接拉出制得奈米碳管薄膜，奈米碳管 薄膜中的奈米碳管通過凡德瓦爾力結合，故奈米碳管在薄 膜中均勻分散，且擇優取向排列。 【實施方式】 下面將結合附圖及具體實施例對本技術方案作進一步 的詳細說明。 μ參見圖1，本技術方案提供一種奈米碳管薄膜製備 裝置100，其包括一樣品台110，一基條供給裝置，一 載物裝置130及一拉伸裝置140，其中基條供給裝置12〇、 載物裝置130及拉伸裝置14〇依次設置在樣品台11〇的一 側’基條供給裝置120與樣品台no相鄰，載物裝置13〇 設置於基條供給裝置120與拉伸裝置140之間。所述基條 200920689 .供給裝置120、載物裝置130和拉伸裝置140設置於所述 樣品台110同一側的同一方向。 所述樣品台110為一固定裝置，該樣品台110包括一 平面112，奈米碳管陣列116的基底114可固定在樣品台 110的平面122上，固定方式包括卡扣、粘結等。 所述基條供給裝置120包括一供給台122，該基條供 給裝置120的供給台122可以沿垂直於水平面方向升降移 動，該基條供給裝置120的供給台122的升降移動可通過 人工手動控制或者電腦程式控制，基條供給裝置120可連 續地供應基條設置於供給台122上。使用時，預先從固定 在樣品台110的平面112上的奈米碳管陣列116中拉取一 段奈米碳管薄膜118粘附於基條供給裝置120所提供的第 一基條124上。通過拉伸第一基條124沿著奈米碳管薄膜 118的拉伸方向拉長奈米碳管薄膜118，拉伸奈米碳管薄膜 118至一預定長度後，將該基條供給裝置120提供的第二 基條126與被拉長後的奈米碳管薄膜118接觸並粘附，在 第一基條124與第二基條126之間的奈米碳管薄膜118被 截斷後，第二基條126可繼續維持奈米碳管薄膜118拉出 的狀態及奈米碳管薄膜118的完整性，以便繼續從奈米碳 管陣列116中繼續拉出並拉伸奈米碳管薄膜118。基條供 給裝置120通過持續的供應基條與奈米碳管薄膜118接觸 並粘附，以維持奈米碳管薄膜118的拉伸狀態，保證奈米 碳管薄膜118的持續拉伸。 所述載物裝置130包括一載物台132，該載物裝置130 10 200920689 ‘與基條供給裝置12〇位於栉σ a m20位…△ 的同一側，基條供給 裝置4於樣σσσ 11〇與載物裝置13〇 置130設置于太丰#总2 # 通載物裝 又直卞不未石厌官薄膜的拉出方向上。 可以沿奈米碳管薄膜的拉巾 戰物裝置130 的載物台!32可以圍J :水準移動，載物裝置130 以⑷·，堯其中心軸水準36〇。轉 垂直於水平面方向上下升降移動。載物n口 i娜動均通過電腦程式控制。使用 設置於載物裝置13〇的韶私A i 支標體134 和載物a 132 、 ° 32上，移動載物裝置13〇 充分接；，將太Ϊ 134與奈米碳管薄臈118的底部 :::奈米碳管薄膜11δ枯附於支撐體134上。同 時，可以调控载物台132的轉動 同的角度盥丰乎舻其$ π , 丈义存體134多次以不 月又，、不水石反s溥膜118接觸並粘附。 所述拉伸裝置14〇包括— ^ 1： 120 Μ ά^ι ^ 32 ° 2，其與基條供給 〇和载物裝置⑽位於樣品台 載物裝置13〇位於基條供給褒置12。的;= 所述固定H 142可4 — 甘 ㈣置140之間。 列116，開口端的宽，其開D端朝向奈米碳管陣 移動控制奈米碳管_118@ 疋U2通過水準 平面上下銘叙门 耵孜出方向，也可以垂直於水 電腦=器142的移動方向和移動逮度可通過 电月句私式控制。使用時，固定哭 端，順著太乎雄焚— °。 σ夾住基條124的兩 貝者不水石反官缚膜118的拉屮 碳管薄膜118。 拉出方向方向水準拉伸奈米 請參見圖2，本發明提供— 製備裝置製備使用上述奈米石反管薄骐 4峡官相的方法，其包括以下步驟. 11 200920689 ' (一）提供—奈米碳管陣列116形成於基底114上， 將該基底114固定於樣品台11()上。 本實施例中，所述奈米碳管陣列116為一超順排奈米 碳官陣列，該超順排奈米碳管陣列118的製備方法採用化 學氣相沉積法，其具體步驟包括：提供一平整基底114， 該基底114可選用p型或N型矽基底，或選用形成有氧化 層的矽基底，本實施例優選為採用4英寸的矽基底；在基 底114表面均勻形成一催化劑層，該催化劑層材料可選用 鐵（Fe)、銘（Co)、鎳（Ni)或其任意組合的合金之一； 將上述开> 成有催化劑層的基底114在〜9〇〇。〇的空氣中 退火約30分鐘〜90分鐘；將處理過的基底114置於反應爐 中，在保護氣體環境下加熱到5〇〇〜74〇°c，然後通入碳源 氣體反應約5〜30分鐘，生長得到超順排奈米碳管陣列。 該超順排奈米碳管陣列為多個彼此平行且垂直於基底生長 的奈米碳管形成的純奈米碳管陣列，其高度為2〇〇〜4〇〇微 米通過上述控制生長條件，該超順排奈米碳管陣列中基 本不含有雜質，如無定型碳或殘留的催化劑金屬顆粒等。 =奈米碳管陣列Π4中的奈米碳管彼此通過凡德瓦爾力緊 密接觸形成陣列。 本貝施例中竣源氣可選用乙炔等化學性質較活潑的竣 氫化合物，保護氣體可選用氮氣、氨氣或惰性氣體。 將上述奈米碳管陣列116的基底114固定於樣品台 U0上。可以選用膠帶、粘結劑等固定基底114於樣品台 110 上。 12 200920689 (二）從上述奈米碳管陣列114中預先拉出一段奈米 碳管薄膜118 ’將此奈米碳管薄膜118 一端粘附於基條供 給裝置120提供的第一基條124上。 採用膠帶從上述奈米碳管陣列114中選定—定寬产的 多個奈米碳管片斷，以一定的速度和角度拉伸出多個奈米 碳管片斷形成一連續的奈米碳管薄膜118。所述角度為奈 米碳管薄膜118與奈米碳管陣列114生長方向之間的夾角， 範圍為30°-90°，本實施例優選的角度為85。。調整基條供 給裝置120的高度，將此奈米碳管薄膜118的底 供給裝置12〇所提供的第-基條124接觸並㈣^使^ 碳管薄膜118處於拉伸狀態。 在上述拉伸過程中，該多個奈米碳管片斷在拉力作用 下沿拉伸方向逐漸脫離基底的同時，由於凡德瓦爾力作用， 該選定的多個奈米碳管片斷分別與其他奈米碳管片斷首尾 相連地連續地被拉出，從而形成一奈米碳管薄膜^8。芎 奈米碳管薄膜118為定向排列的多個奈米碳管束首尾相連 形成的具有一疋寬度的奈米碳管薄膜。該奈米碳管薄膜 118中奈米碳管的排列方向基本平行于奈米碳管薄膜 的拉伸方向。 本實施例中，該奈米碳管薄膜118的寬度與奈米碳管 陣歹j 116所生長的基底ι14的尺寸有關，該奈米碳管薄膜 ^ 8的長度不限，可根據實際需求製得。本實施例中採用* 央寸的基底114生長超順排奈米碳管陣列，該奈米碳管薄 膜U8的寬度可為lcm〜10cm，厚度為〇 〇1〜1〇〇微米。 13 200920689 所述基條材料包括金屬、玻璃、橡膠或塑膠等物質， 優選地，本實施例中基條為金屬，該基條設置於基條供給 裝置120的供給台122上，基條可脫離基條供給裝置12〇 自由移動，基條的長度大於等於奈米碳管薄膜的寬度。 由於本實施例步驟（一）中所提供的超順排奈米碳管 陣列116中的奈米碳管非常純淨，且由於奈米碳管本身的 比表面積非常大，所以該奈米碳管薄膜118本身具有較強 的粘性，故奈米碳管薄膜118可利用其本身的粘性直接粘 附於基條上。 (二）將上述第一基條124固定於拉伸裝置14〇上， 拉伸上述奈米碳管薄膜118。 移動拉伸裝置140上的固定器142，使其靠近第一基 條124，使用固疋器142將該第一基條固定於拉伸裝 置140上，調整拉伸裝置14〇，使其沿垂直于奈米碳管陣 列116生長方向繼續拉伸上述奈米碳管薄膜ιΐ8至載物裝 置130與拉伸裝置140之間。 乂 本實轭例中，所述固定器142為一 U型夾，其開口端 :寬度'調節。將此U型央固定器142移至第一基條124 处’使該第-基條124處於U型夾開口處，調整此 :口的寬度使其夹住第-基條m長度方向的兩端’將ί 基條124固定在拉伸裝置14〇上。 調整拉伸裳Ε 14〇上固定器142的位置，沿基 2 =:載物裝置13〇及拉伸裝置14〇所在的方向，、ς 不米奴官陣列114水準拉伸奈米碳管薄膜⑽至載物裝 14 200920689 置130與拉伸裝置140之間。 (四） 將奈米碳管薄膜118粘附於基條供給裝置120 提供的第二基條126上。 基條供給裝置120提供一第二基條126，調節基條供 給裝置120的高度，將第二基條126粘附於所述奈米碳管 薄膜118的底部。 此時，第一基條124與第二基條126之間的奈米碳 管薄膜118處於懸空狀態。 (五） 提供一支撐體134設置於載物台132上，將第 一基條124與第二基條126之間的奈米碳管薄膜118粘附 於支撐體134上。 所述支撐體134為具有一定形狀的起支撐奈米碳管薄 膜118的基材，可以為基板或者固定框架結構。本實施例 支撐體134為一方形基板。 所述支撐體134可選自任何材料如金屬、塑膠、橡膠 或玻璃等，優選地，本實施例支撐體134材料選自金屬。 将支撑体134放置于载物裝置130的载物台132上， 调整载物台132的位置，使支撑体134位于所述第一基条 124与第二基条126之间的碳纳米管薄膜118的下方；调 整载物台132与固定器142的高度，使碳纳米管薄膜118 底部与支撑体134充分接触，将第一基条124与第二基条 126之间的碳纳米管薄膜118粘附于支撑体134上。 (六） 在第二基條126與支撐體134之間及上述第一 基條124與支撐體134之間截斷奈米碳管薄膜118。 15 200920689 - 在第二基條126與支撐體ι34之間及上述第一基條 124與支撐體134之間截斷奈米碳管薄膜118，此時，在支 撐體134上形成一單層奈米碳管薄膜結構。 第二基條126使奈米碳管薄膜118繼續維持一拉伸狀 悲，可重複步驟（三）、（四）、（五）、（六），在不更換支撐 體134的情況下，可將多層奈米碳管薄膜118粘附於支撐 體134上，由於載物台132可36〇。轉動，故可轉動支撐體 134，調節支撐體134上相鄰兩層奈求碳管薄膜的疊加角 度，獲得一奈米碳管多層膜結構，其具體包括以下步驟： 將上述第二基條126固定於拉伸裝置140上，繼續拉 伸上述奈米碳管薄膜n8 ; 將奈米碳管薄膜118粘附於基條供給裝置12〇提供的 第三基條上； 轉動載物台132’調節支撲體134的角度，將第二美 條126與第二基條之間的奈米碳管薄膜118枯附於支撑體 134 上； 在第二基條126與支撐體134之間及上述第三基條與 支撐體134之間截斷奈米碳管薄膜U8。 可以理解，更換載物台上的支撐體，重複步驟（三）、 (四）、（五）、（六）可連續製備多個單層奈米碳管薄膜。 综上所述，本發明確已符合發明專利之要件，遂依法 提出專利申請。惟，以上所述者僅為本發明之較佳實施例， 自不也以此限制本案之申請專利範圍。舉凡熟悉本案技蓺 之人士援依本發明之精神所作之等效修飾或變化，皆應涵 16 200920689 _蓋於以下申請專利範圍内。 【圖式簡單說明】 圖1為本技術方案的奈米碳管薄膜製備裝置示意圖。 圖2為採用圖1中的奈米碳管薄膜製備裝置製備奈米 碳管薄膜的流程圖。 【主要元件符號說明】 奈米碳管薄膜製備裝置 100 樣品台 110 平面 112 基底 114 奈米碳管陣列 116 奈米碳管薄膜 118 基條供給裝置 120 供給台 122 第一基條 124 第二基條 126 載物裝置 130 載物台 132 支撐體 134 拉伸裝置 140 固定器 142 17In addition, in the laboratory stage, the production is continued. The above several methods for preparing the carbon nanotube film are all required in the actual test conditions, the operation is complicated, and it is impossible to realize the preparation device of the carbon nanotube film and the production of the solar nanotube film. As a short time, it is possible to produce a carbon nanotube film in a larger batch. 'There is no need to separate the film in the film and select the content of the invention. 】 【牛牛勺: Preparation device for the carbon nanotube film, including a sample And a feeding device, a loading device and a stretching device sequentially set the Sr side of the piano, and the yarn supply u is adjacent to the sample stage, wherein the loading device is disposed on the base supply device and the pulling device (d) between the sets. 8 200920689 - A method of preparing a nanocarbon f film, comprising: providing a nanocarbon & barrier formed on a substrate, the substrate is fixed on the sample stage; from the above-mentioned nano tube array Pre-pulling the segmented carbon nanotube tube thin m, the end of the carbon nanotube film is on the first base strip provided by the base strip supply device; and the first base strip is fixed on the stretching device to stretch the naphthalene Carbon tube film; adhere the carbon nanotube film to the base a second base strip provided by the strip supply device; a support body is provided on the stage, and the carbon nanotube film between the first base strip and the second base strip is adhered to the support; in the first base strip The carbon nanotube film is cut between the support body and the second base strip and the support body. Compared with the prior art, the carbon nanotube film preparation device and the device can be controlled by the computer program. To achieve semi-automatic production of carbon nanotube film in a large number of batches. In addition, due to the use of mechanical tension ^ nano carbon tube array directly pulled out to produce nano carbon film, nano carbon nanotube film The carbon nanotubes are combined by the van der Waals force, so the carbon nanotubes are uniformly dispersed in the film and arranged in a preferred orientation. [Embodiment] The technical solution will be further described in detail below with reference to the accompanying drawings and specific embodiments. 1 , the present technical solution provides a carbon nanotube film preparation apparatus 100 including a sample stage 110, a substrate supply device, a load device 130 and a stretching device 140, wherein the substrate supply device 12, Load device 130 and stretching 14 is disposed in turn on the side of the sample stage 11A. The base strip supply device 120 is adjacent to the sample stage no, and the load device 13 is disposed between the base strip supply device 120 and the stretching device 140. 200920689. The supply device 120, the loading device 130 and the stretching device 140 are disposed in the same direction on the same side of the sample stage 110. The sample stage 110 is a fixing device, and the sample stage 110 includes a plane 112, nano carbon The base 114 of the tube array 116 can be secured to the plane 122 of the sample stage 110 in a manner that includes snaps, bonds, etc. The base strip supply 120 includes a supply station 122, which is fed to the base 120 The lifting movement of the supply table 122 of the base strip supply device 120 can be controlled by manual manual control or computer program, and the base strip supply device 120 can continuously supply the base strip on the supply table 122. In use, a portion of the nanotube film 118 is previously drawn from the array of carbon nanotubes 116 fixed to the plane 112 of the sample stage 110 to adhere to the first base strip 124 provided by the substrate supply unit 120. The carbon nanotube film 118 is elongated in the stretching direction of the carbon nanotube film 118 by stretching the first substrate 124, and after stretching the carbon nanotube film 118 to a predetermined length, the substrate is supplied to the device 120. The second base strip 126 is provided in contact with and adhered to the elongated carbon nanotube film 118. After the carbon nanotube film 118 between the first base strip 124 and the second base strip 126 is cut off, the second The strip 126 can continue to maintain the state in which the carbon nanotube film 118 is pulled out and the integrity of the carbon nanotube film 118 to continue to pull and stretch the carbon nanotube film 118 from the carbon nanotube array 116. The base strip supplying device 120 is in contact with and adhered to the carbon nanotube film 118 through a continuous supply base to maintain the stretched state of the carbon nanotube film 118, and to ensure continuous stretching of the carbon nanotube film 118. The load device 130 includes a stage 132, which is located on the same side of the 供给σ a m20 position ... Δ with the base strip supply device 12 ,, and the base strip supply device 4 is σσσ 11 〇 And the loading device 13 is disposed on the Taifeng #总2# through the loading and unloading direction of the film. The stage 32 of the towel-type object device 130 along the carbon nanotube film can be moved around the J: level, and the load device 130 is at (36), and its center axis level is 36 〇. Turn up and down in the direction perpendicular to the horizontal plane. The n-port of the load is controlled by a computer program. The movable load device 13 is fully connected by using the self-propelled A i support body 134 disposed on the load carrying device 13 and the loads a 132 and ° 32; and the sun 134 and the carbon nanotube thin tube 118 are Bottom::: The carbon nanotube film 11δ is attached to the support 134. At the same time, the rotation of the stage 132 can be adjusted to the same angle as the $ π, and the deposit 134 is repeatedly contacted and adhered to the non-salt film 118. The stretching device 14A includes - ^ 1: 120 ά ά ^ ^ ^ 32 ° 2, which is located in the substrate supply device 12 with the substrate supply cassette and the carrier device (10). ; = The fixed H 142 can be 4 - Gan (four) between 140. Column 116, the width of the open end, its open D end toward the carbon nanotube array mobile control carbon nanotube _118@ 疋U2 through the leveling plane in the direction of the door, or perpendicular to the water computer = 142 The direction of movement and the degree of movement can be controlled privately by the electric moon. When using it, fix the crying end and follow it too hardly - °. The σ is sandwiched between the two carbon nanotube films 118 of the two strips of the water-repellent counter-actuator film 118. Pulling out the direction of the horizontal stretching of the nanometer, please refer to FIG. 2, the present invention provides a method for preparing a preparation device using the above-mentioned nanometer anti-tube thin scorpion, which includes the following steps. 11 200920689 ' (1) Provided - A carbon nanotube array 116 is formed on the substrate 114 to secure the substrate 114 to the sample stage 11(). In this embodiment, the carbon nanotube array 116 is a super-sequential nanocarbon array, and the method for preparing the super-sequential carbon nanotube array 118 is a chemical vapor deposition method, and the specific steps include: providing A flat substrate 114, the substrate 114 may be selected from a p-type or N-type germanium substrate, or a germanium substrate formed with an oxide layer. In this embodiment, a 4-inch germanium substrate is preferably used; a catalyst layer is uniformly formed on the surface of the substrate 114. The catalyst layer material may be selected from one of iron (Fe), indium (Co), nickel (Ni) or any combination thereof; the substrate 114 having the catalyst layer formed above is at ~9 Torr. Annealing in the air for about 30 minutes to 90 minutes; placing the treated substrate 114 in a reaction furnace, heating to 5 〇〇 74 〇 ° C under a protective gas atmosphere, and then introducing a carbon source gas to react about 5 〜 After 30 minutes, a super-aligned carbon nanotube array was grown. The super-sequential carbon nanotube array is a plurality of pure carbon nanotube arrays formed by a plurality of carbon nanotubes which are parallel to each other and perpendicular to the substrate, and have a height of 2 〇〇 4 4 μm through the above controlled growth conditions, The super-sequential carbon nanotube array contains substantially no impurities, such as amorphous carbon or residual catalyst metal particles. The carbon nanotubes in the carbon nanotube array Π4 are in close contact with each other to form an array by van der Waals force. In the present embodiment, the ruthenium gas can be selected from the chemically active hydrazine compounds such as acetylene, and the protective gas can be nitrogen, ammonia or an inert gas. The substrate 114 of the above-described carbon nanotube array 116 is fixed to the sample stage U0. The substrate 114 may be fixed to the sample stage 110 by means of a tape, an adhesive or the like. 12 200920689 (b) A section of the carbon nanotube film 118' is preliminarily pulled from the above-mentioned carbon nanotube array 114. One end of the carbon nanotube film 118 is adhered to the first base strip 124 provided by the strip supply device 120. A plurality of carbon nanotube segments selected from a plurality of carbon nanotube arrays 114 are selected by tape, and a plurality of carbon nanotube segments are stretched at a certain speed and angle to form a continuous carbon nanotube film. 118. The angle is the angle between the growth direction of the carbon nanotube film 118 and the carbon nanotube array 114, ranging from 30° to 90°, and the preferred angle of this embodiment is 85. . The height of the base strip feeding device 120 is adjusted, the first base strip 124 provided by the bottom supply means 12 of the carbon nanotube film 118 is brought into contact, and (4) the carbon tube film 118 is stretched. In the above stretching process, the plurality of carbon nanotube segments are gradually separated from the substrate in the stretching direction under the action of the tensile force, and the selected plurality of carbon nanotube segments are respectively associated with the other naphthalenes due to the van der Waals force. The carbon nanotube segments are continuously pulled out end to end to form a carbon nanotube film ^8. The carbon nanotube film 118 is a carbon nanotube film having a width of one turn formed by connecting a plurality of aligned carbon nanotube bundles end to end. The arrangement of the carbon nanotubes in the carbon nanotube film 118 is substantially parallel to the stretching direction of the carbon nanotube film. In this embodiment, the width of the carbon nanotube film 118 is related to the size of the substrate ι14 grown by the carbon nanotube array j 116. The length of the carbon nanotube film 8 is not limited, and can be made according to actual needs. Got it. In this embodiment, a super-sequential carbon nanotube array is grown by using a substrate 114 of a central inch, and the carbon nanotube film U8 has a width of 1 cm to 10 cm and a thickness of 〇1 to 1 μm. 13 200920689 The base strip material comprises a metal, glass, rubber or plastic material. Preferably, in the embodiment, the base strip is metal, and the base strip is disposed on the supply table 122 of the base strip supply device 120, and the base strip can be detached. The base strip supply device 12 is free to move, and the length of the base strip is greater than or equal to the width of the carbon nanotube film. Since the carbon nanotubes in the super-sequential carbon nanotube array 116 provided in the step (1) of the present embodiment are very pure, and because the specific surface area of the carbon nanotube itself is very large, the carbon nanotube film is 118 itself has a strong viscosity, so the carbon nanotube film 118 can be directly adhered to the base strip by its own viscosity. (2) The first base strip 124 is fixed to the stretching device 14A, and the carbon nanotube film 118 is stretched. The holder 142 on the stretching device 140 is moved closer to the first base strip 124, and the first base strip is fixed to the stretching device 140 using the fixing device 142, and the stretching device 14 is adjusted to be vertical. The carbon nanotube film ι 8 is continuously stretched between the carrier device 130 and the stretching device 140 in the growth direction of the carbon nanotube array 116. In the present embodiment, the holder 142 is a U-shaped clip whose open end: width 'adjusts. Move the U-shaped central fixer 142 to the first base strip 124 to make the first base strip 124 at the U-shaped clip opening, and adjust the width of the slit to sandwich the length of the first base strip m. The end 'fixes the ί strip 124 to the stretching device 14〇. Adjust the position of the stretcher Ε 14Ε upper holder 142, along the base 2 =: the load device 13 〇 and the stretching device 14 〇 in the direction, ς 米 奴 官 Array 114 level tensile carbon nanotube film (10) between the load assembly 14 200920689 130 and the stretching device 140. (4) The carbon nanotube film 118 is adhered to the second base strip 126 provided by the base strip supply device 120. The base strip supply unit 120 provides a second base strip 126 which adjusts the height of the base strip supply unit 120 to adhere the second base strip 126 to the bottom of the carbon nanotube film 118. At this time, the carbon nanotube film 118 between the first base strip 124 and the second base strip 126 is in a floating state. (5) A support body 134 is provided on the stage 132, and the carbon nanotube film 118 between the first base strip 124 and the second base strip 126 is adhered to the support body 134. The support body 134 is a substrate having a shape supporting the carbon nanotube film 118, and may be a substrate or a fixed frame structure. In this embodiment, the support body 134 is a square substrate. The support 134 may be selected from any material such as metal, plastic, rubber or glass, etc. Preferably, the support 134 material of the present embodiment is selected from the group consisting of metals. The support body 134 is placed on the stage 132 of the loading device 130, and the position of the stage 132 is adjusted so that the support body 134 is located between the first base strip 124 and the second base strip 126. The height of the stage 132 and the holder 142 is adjusted so that the bottom of the carbon nanotube film 118 is in sufficient contact with the support 134, and the carbon nanotube film 118 between the first base strip 124 and the second base strip 126 is Adhered to the support 134. (6) The carbon nanotube film 118 is cut between the second base 126 and the support 134 and between the first base 124 and the support 134. 15 200920689 - The carbon nanotube film 118 is cut between the second base 126 and the support ι 34 and between the first base 124 and the support 134. At this time, a single layer of nano-lining is formed on the support 134. Carbon tube film structure. The second base strip 126 continues to maintain the stretched shape of the carbon nanotube film 118, and steps (3), (4), (5), and (6) can be repeated, without replacing the support body 134. The multilayered carbon nanotube film 118 is adhered to the support 134, since the stage 132 can be 36 〇. Rotating, so that the support body 134 can be rotated to adjust the superimposed angle of the adjacent two layers of the carbon nanotube film on the support body 134 to obtain a carbon nanotube multilayer film structure, which specifically includes the following steps: Fixing on the stretching device 140, continuing to stretch the carbon nanotube film n8; adhering the carbon nanotube film 118 to the third base strip provided by the base strip feeding device 12; adjusting the rotating stage 132' The angle of the baffle body 134 is such that the carbon nanotube film 118 between the second strip 126 and the second strip is adhered to the support 134; between the second strip 126 and the support 134 and the above The carbon nanotube film U8 is cut between the three base strips and the support body 134. It can be understood that the support body on the stage is replaced, and steps (3), (4), (5), and (6) are repeated to continuously prepare a plurality of single-layer carbon nanotube films. In summary, the present invention has indeed met the requirements of the invention patent, and has filed a patent application according to law. However, the above description is only a preferred embodiment of the present invention, and it is not intended to limit the scope of the patent application of the present invention. Any equivalent modifications or variations made by those skilled in the art to the spirit of the present invention should be included in the scope of the following patent application. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic view of a carbon nanotube film preparation apparatus of the present technical scheme. Fig. 2 is a flow chart showing the preparation of a carbon nanotube film by using the carbon nanotube film preparation apparatus of Fig. 1. [Main component symbol description] Carbon nanotube film preparation apparatus 100 Sample stage 110 Plane 112 Base 114 Carbon nanotube array 116 Carbon nanotube film 118 Base supply device 120 Supply stage 122 First base strip 124 Second base strip 126 Loader 130 Stage 132 Support 134 Stretching Device 140 Fixer 142 17