TW201134230A - Supporting members for a speaker unit and arranging method therefor - Google Patents

Supporting members for a speaker unit and arranging method therefor Download PDF

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Publication number
TW201134230A
TW201134230A TW100108324A TW100108324A TW201134230A TW 201134230 A TW201134230 A TW 201134230A TW 100108324 A TW100108324 A TW 100108324A TW 100108324 A TW100108324 A TW 100108324A TW 201134230 A TW201134230 A TW 201134230A
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TW
Taiwan
Prior art keywords
support
electrode
diaphragm
sound
support body
Prior art date
Application number
TW100108324A
Other languages
Chinese (zh)
Inventor
Ming-Daw Chen
Chang-Ho Liou
Original Assignee
Ind Tech Res Inst
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Publication date
Application filed by Ind Tech Res Inst filed Critical Ind Tech Res Inst
Priority to TW100108324A priority Critical patent/TW201134230A/en
Publication of TW201134230A publication Critical patent/TW201134230A/en

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Abstract

Supporting members for a speaker unit and arranging method therefore are provided herein. The speaker unit has a light, thin bendable structure of a sound chamber. The structure of the sound chamber includes a substrate. A plurality of supporting members is arranged between the substrate and a vibrating film of the speaker unit. The supporting members can be formed on the substrate of the structure of the sound chamber or formed on an electrode of the vibrating film. The supporting members can be adhered to the substrate, or to the electrode of the vibrating film as desired. Optionally, the supporting members can also be manufactured in advance and then be disposed between the space between the substrate and the vibrating film.

Description

201134230 rDiy/uu^5TWDl 27665-ltwf.doc/n 六、發明說明: 【發明所屬之技術領域】 本發明是有關於一種適用於平面揚聲器之支护 特別是有關於-種_於平面揚聲器之切體及^配置= 法。 【先前技術】 人類最直接的兩種感官反應是視覺與聽覺系統, 長久以來,科學家們極力的發展與此相關的 '目前電聲揚聲器分類主要分為直接、間接輻 驅動方式大齡為_式、及靜電 咖最廣、技術成熟,因此是主宰整個= 的主要技#r,不過由於其先天架構的缺點,独法 ίϊ應/電式揚聲器則是利用壓電材料的壓 場於墨電材'料所造成材料變形的特 但限於壓電材發聲’此揚聲11雖赌構扁平微小化, 式揚罄$日騎燒結所以仍無法進行撓曲。靜電 傳统靜電市場主要為頂級(Hi如d)的耳機和♦八, ===】=原理是將兩片開孔的固定電極板 給予兩_定2= 料供給振魅流偏壓以及 的靜電力,帶鱗=^交流電壓,正負電場所發生 健k料電振膜振動並將聲音轄射出去。 ;人電子的相關技術應用中,聲音(Audio)是—個重 201134230 P5197〇()25TWD〗27略ltwf.d〇c/n 要的TO素。但軟性電子須具備軟、薄、及可燒曲等特性, T此如何讓平面靜電式揚聲器具前述的特性,又可在聲音 。口質上具備與現有揚聲器競爭的優勢。因此,搭配可棱曲 =的加入,突破習知固定式揚聲器音腔設計結構,完成 d軟性電子所需特色的聲音零組件將是軟性電子產業的 一大重點。 目則揚聲|§製作,其設計方式仍制單-單體的設計 生產方式’如美國第3,894,199號專利内容。 β關^靜電式揚聲n,如美國第3,894,199號專利,主 要疋揭路種電聲轉換器(Electr〇ac_tic 丁削恤⑽)結 構如圖1所示,該結構包括置於兩侧的固定電極(Fixed Electrodes)結構11〇與12〇β此固定電極結構⑽與具 有夕個孔洞可散佈所產生的聲音。而一振膜 Film)130則配置在固定電極結構11〇與i2〇之間。而固定 Μ冓140則為絕緣材料所構成,並用以固定所述的固定電 極結構110、12〇以及振膜13〇。固定電極結構⑽與 =別經由龍H 15〇連接到—錢電壓源·。當交流信 號傳送到固定電極結構110與12〇時,電位將會交替地改 變而使振膜130受到兩側電位的差異產生震動,藉以產生 對應的聲音。然而,上述配置的方式需増強聲壓輸出,因 此扁額外的功率元件配合驅動,如此一來,不但裝置體積 龐大,且使用元件較多,成本亦較高。另外,由^固定结 構140必須固定所述的固定電極結構u〇、12〇以及振膜 13〇’因此,這樣的電聲轉換器結構無法達到可撓曲的特性。 201134230 rwuz5TWDl 27665-ltwfd〇c/n 【發明内容】 本發明提供一種具借知 ^ 構,運用在揚聲器單體^ ’甘可撓曲等特性的音腔結 相當的支撐體組成。構上’其為在—音腔基材上設計 於振=!體:基材上:或者製作 有黏著或不黏著的兩種‘計方:取電極或振膜電極 成後再置入振膜電極與音腔基; 才間或者先行製作支撐體完 音腔支撐體时佈,财 支撐體的配置組合,於平面靜 聲器結構中 ^上依音頻設計的考量置人最佳化的= 有配置方式、高度等的設計。 城體叹和其可以 音腔=支出^ 體環繞電極、振膜與音腔基材開孔。邊框支樓 於電極與音腔基材之間。電極與振;振= 崔-第二腔 第-腔至空間内’配置在電極 之間,藉以防止振膜盥電極之桩緬一匕巧^、搌朕 於第二腔室空間内,對應於支撐體的腔支撐體位 上述揚聲器單體結構,其中音 式,《振膜之靜電效應大小、,方 音腔支撐體的配置佈局定。 之間的距離。 λ相整相鄰音腔支樓體 201134230 rD iy /uu25TWDl 27665-ltwf.doc/n 音腔支撐體的外型為點狀、三角柱形、圓柱形或是矩 形等任何幾何形狀,可搭配揚聲器單體的不同頻率響應設 計。 音腔支撐體的是採用轉印方式形成於音腔基材或是 振膜上。而此轉印方《包括噴墨列印$網版印刷其中之一 或其他方式。另外,音腔續體也可採用轉貼方式形成於 音腔基材或是賴上,其憎財式騎音腔支樓體置入 音腔基材與振膜之間加以黏著或是不需要黏著。 另外’音腔支樓體也可經由姓刻方式形成於音腔基材 或疋振膜上。歧經由総曝光顯影(phQtQiithQ_hy) 方式形成於音腔基材或是振膜上。 =腔支碰可岐由透明且可撓_材質所組成。 该曰腔支撑體為點狀結構、柵狀結構或是類十字狀結 構。 點能更明顯易懂,下文特 作洋細說明如下。 為讓本發明之上述特徵和優 舉較佳實施例,並配合所附圖式 【實施方式】 本發明揭7F-種應用於平面靜^ ^ 計’可以讓平面式揚聲器具有卓 '杨::曰1、、。構-又 化發展,若採_傳統成結構朝扁平 法達成讓揚聲n具備可撓_特性。心H大空間及無 本發月提出於曰腔區内含支樓體結構設計,並依規格201134230 rDiy/uu^5TWDl 27665-ltwf.doc/n VI. Description of the Invention: [Technical Field of the Invention] The present invention relates to a support suitable for a flat speaker, in particular, a type-to-plane speaker Body and ^ configuration = method. [Prior Art] The two most direct sensory responses of human beings are the visual and auditory systems. For a long time, scientists have been vigorously developing related to this. The current classification of electroacoustic speakers is mainly divided into direct and indirect spoke driving methods. And the static coffee is the widest and the technology is mature, so it is the main technology #r that dominates the whole =, but due to the shortcomings of its innate architecture, the unique method / electric speaker uses the pressure field of the piezoelectric material in the ink material The deformation of the material is limited to the piezoelectric material. This sound 11 is not flattened even if it is flat and thin. The electrostatic static electricity market is mainly for the top (Hi as d) headphones and ♦ eight, ===] = the principle is to give two pieces of fixed electrode plate to give two _ fixed 2 = material supply vibrating bias and static electricity Force, with scale = ^ AC voltage, positive and negative electric field vibration occurs and the sound is emitted. In the related technology application of human electronics, the sound (Audio) is a heavy weight. 201134230 P5197〇()25TWD〗 27 slightly ltwf.d〇c/n The desired TO prime. However, soft electronics must have the characteristics of softness, thinness, and burnability. How to make the flat electrostatic speaker have the aforementioned characteristics and sound. The vocabulary has the advantage of competing with existing speakers. Therefore, with the addition of the prismatic =, breaking through the design structure of the fixed speaker cavity, the sound components required to complete the soft electronics will be a major focus of the soft electronics industry. The purpose is to make a sound | § production, the design method is still a single-unit design production method, such as the United States No. 3,894,199 patent content.关关^ electrostatic type sound n, such as the United States No. 3,894,199 patent, the main structure of the electroacoustic converter (Electr〇ac_tic Ding (10)) structure shown in Figure 1, the structure includes placed on both sides The fixed electrode (Fixed Electrodes) structure 11 〇 and 12 〇 β this fixed electrode structure (10) and the sound produced by the scatter of a hole can be scattered. A diaphragm film 130 is disposed between the fixed electrode structures 11A and i2〇. The fixed crucible 140 is made of an insulating material and is used to fix the fixed electrode structures 110, 12A and the diaphragm 13A. The fixed electrode structure (10) and = do not connect to the money source by the dragon H 15〇. When the alternating current signal is transmitted to the fixed electrode structures 110 and 12, the potential will be alternately changed to cause the diaphragm 130 to vibrate by the difference in potential between the two sides, thereby generating a corresponding sound. However, the above configuration requires a bare sound pressure output, so that the extra power components are combined with the driving, so that the device is not only bulky, but also uses many components and costs are high. Further, the fixed electrode structures u 〇, 12 〇 and the diaphragm 13 〇 must be fixed by the fixing structure 140. Therefore, such an electroacoustic transducer structure cannot achieve the flexible characteristics. 201134230 rwuz5TWDl 27665-ltwfd〇c/n SUMMARY OF THE INVENTION The present invention provides a support structure having a structure in which a speaker unit is used in a speaker unit, such as a speaker unit. The structure is designed to be on the substrate of the sound chamber. The body is designed on the substrate: on the substrate: or two kinds of prescriptions that are adhered or not adhered: the electrode or the diaphragm electrode is formed and then placed into the diaphragm. The electrode and the sound chamber base; when the support or the first production of the support cavity is completed, the configuration of the financial support body is optimized in the structure of the flat silencer according to the design of the audio design = Design of configuration, height, etc. The city body sighs and can be sound chamber = expenditure ^ body around the electrode, diaphragm and sound cavity substrate opening. The frame branch is between the electrode and the sound chamber substrate. Electrode and vibration; vibration = Cui - second cavity - cavity to space 'disposed between the electrodes, so as to prevent the diaphragm 盥 electrode from being a good fit, 搌朕 in the second chamber space, corresponding to The cavity support body of the support body has the above-mentioned speaker single body structure, wherein the sound type, "the electrostatic effect size of the diaphragm, and the configuration layout of the square sound cavity support body". the distance between. λ phase-aligned adjacent sound chamber branch body 201134230 rD iy /uu25TWDl 27665-ltwf.doc/n The cavity support body has any geometric shape such as point, triangle column, cylinder or rectangle, which can be matched with the speaker list. Different frequency response designs of the body. The cavity support is formed on the sound chamber substrate or the diaphragm by transfer. And this transfer side "includes one of inkjet printing $ screen printing or other means. In addition, the sound cavity continuation can also be formed on the sound cavity substrate or the splicing method, and the 憎 式 骑 骑 骑 支 支 置 置 置 置 置 置 置 置 置 置 置 或是 或是 或是 或是 或是 或是 或是 或是 或是. In addition, the sound chamber branch body can also be formed on the sound cavity substrate or the diaphragm by the surname. The ambiguity is formed on the sound cavity substrate or the diaphragm by means of 総 exposure development (phQtQiithQ_hy). = cavity support can be composed of transparent and flexible material. The cavity support is a point structure, a grid structure or a cross-like structure. The points can be more obvious and easy to understand. The following is a detailed description. In order to make the above-mentioned features and preferred embodiments of the present invention, and to match the accompanying drawings [Embodiment], the present invention discloses that the application of the 7F-type to the plane static ^ ^ meter can make the planar speaker have Zhuo Yang:曰 1,,. The structure-and-construction development, if the traditional method of building into a flat method to achieve the sound of the sound n is flexible _ characteristics. Heart H large space and no This month is proposed in the squat cavity area containing the structure design of the branch building, and according to the specifications

6 S 201134230 __5TWD1 27665彻fd〇c/n 需求進行支撐體各種圖樣化或高度 結構置於發聲孔洞區的相對面,而將此音腔 與揚聲器元件内的支稽體位置配置I有If體的位置配置 藉由音腔支撐體結構的設計及配置,1相對稱的關係。而 當大的助益。雖然音腔支撐體的位置配以響應有相 的支撐體位置配置具有相對稱的關係:ί:= 元件内 非需要-致’此音腔支撐體的的數量可心丈量並 而調整,數量上可以大於、等於 ^^十上的需要 支撐體數量。 … 】、於揚聲器7L件内的 之平面靜電式揚聲器音腔結構,除了構造簡 於大量生術進行製程整合’實適用 一。產翻將疋千面揚聲器的重要結構組成技術之 材料_ ,表_形,驅 匕之電容值乘上内部電場大小及外部輪入 右振膜受力越大,則輸出聲音越大。 j 當平面靜電式揚聲器的結構設計朝輕、薄、可挽 =發展時,其音㈣設騎構即麟傳統大 吉料設計。因此本發明提出如下實施方式,二 3面設=具備輕、薄、可撓曲等特性的音腔結構,ϊ 為在音腔基材上料相當的音腔支撐體喊。而此音腔 201134230 r3iy/uu/5TWDl 27665-ltwf.doc/n 支撐體與支撐體的製程可分別為製作於音腔基材上、或者 製作於振膜電極上,*支雜可以採取與音腔電極或振膜 電極有黏著(adhesion)或不黏著的兩種設計方式,或者先行 製作音腔支撐體完成後再置入振膜電極與音腔基材間。而 此音腔支撐體的配置佈局方式,可以根據振膜之靜電效應 大小或音頻響應設計決定。 〜 音腔支撐體的分佈,則考量平面靜電式揚聲器結構中 支撐體的配置组合,於平面靜電式揚聲器結構另一面的位 置上依音頻设計的考量置入最佳化的支稽體設計,其可以 有配置方式、高度等的設計。音腔支撐體的配置數目可以 相等、少於或多於平面靜電式揚聲器元件結構中支撐體的 數目。在一選擇實施例中,音腔可内填入吸音材料,以增 加產生音場的深度與廣度。 曰 本實施例所提出的平面靜電式揚聲器音腔結構,於音 腔區内含音腔支撐體結構設計,依音頻設計的考量置入最 佳化的音腔支撐體設計,其可以有配置方式、高度等的設 計。而此音腔支撐體配置設計可為點狀、柵狀或類十字狀 等任意形狀或是不同類型混合搭配等等設計,而音腔支樓 體與音腔支撐體間的距離,可根據音頻設計實際狀況而達 到最佳配置的設計。 上述的音腔支撐體的製程可採用轉印或是轉貼的方式 於音腔基材上,也可以直接在音腔基材上採用印製技術如 噴墨印刷(Injet Printing)或是直接印刷法例如網印(Screen Printing)等方法形成。在另一實施例中,支撐體的製程亦 201134230 rDiv/uuzSTWDl 27665-ltwf.doc/n 可採用直接貼合的料,减行製作切體完錢再置入 電極與減間,而支撐射叫取與_(或是開 孔金屬電極)有黏著(Adhesi〇n)或不黏著的兩種設計方式。 在另外實闕巾,支雜的製程亦可採祕刻方式或 疋光阻曝光㈣㈣絲製作,或是_轉方式來形成。 =本發明職丨平面靜電式揚聲奸腔結構,其揚 聲益早體的結構是由單片金屬電極與單片帶電荷 制連續式捲帶製程,利用具駐極體振膜的軟性 構’突破傳統生產設計流程,彻捲料式的連續 式,搭配沖壓成型、壓鑄、膠合等方式形成捲料 單體素材’如此—來可大轉低現有揚聲器的 二乍成本,並因素材可提供大面積、不規則形狀等工業設 ’對於未來㈣㈣生活應職品有相當大的應 用二間,而這也是軟性電子零組件的一大重點。 而底下以-具體實關朗揚聲器之結構,但並非以 柏舰1。w參考圖2所示,揚聲11單體結構在兩侧 it娘立讀之間形成振膜的工作區域,也就是揚聲器產生 #'^場_室空間’而其内部配置多個經過特定設計的 立二體’不論是外型或是其配置的方式。而在面對發出聲 二=的後方’則是本實施例所提出的音腔結構設計。音 之間’ #_鄰音腔支龍之間形成振膜的 作區域j就是揚聲器產生共振音場的另一腔室空間。 極展揚聲器單體結構細包含振膜21G、具多個開孔的電 1跡邊框支撐體23〇以及介於電極層22〇與振膜別 201134230 rDiy/uu25TWDl 27665-ltwf.doc/n 之間的多個支樓體240。而在振膜210面向電極層220的 另外一側具有音腔結構’此音腔結構是由音腔基材260與 介於振膜210與音腔基材260之間的音腔支撐體270所組 成。振膜210包括駐極體層212、金屬薄膜電極214,其中, 駐極體層212的一側面212a與邊框支撐體230以及支撐體 240連接,而另一侧面212b則與上述金屬薄膜電極214電 性連接。 上述具多個開孔的電極層220可以是由金屬材質所組 成,在一實施例中,也可以經由具有彈性的材料,例如紙 張或是極薄的非導電材料層,其表面鍍上一層金屬薄膜所 完成。 菖電極層220是以非導電材料鑛上一層金屬薄膜時, 此非導電材料可以是塑膠、橡膠、紙張、不導電布料(棉纖 維、高分子纖維)等不導電材料,而此金屬薄膜可以是銘、 金、銀、銅等純金屬材質或其合金,或Ni/Au等雙金屬材 質、或是銦錫氧化物(Indium Tin Oxide,ITO)或銦辞氧 化物(Indium Zinc Oxide,IZ0)其中之一或其組合’或是 高分子導電材PEDOT等等。 在另一實施例中,當電極層220是由導電材質所組 成’可以是例如金屬(鐵、銅、鋁等或其合金)、導電布料(金 屬纖維、氧化金屬纖維、碳纖維、石墨纖維)其中之一所組 成。 駐極體層212的材料可選擇介電材料(Dieleetrie Materials)。而此介電材料經電化(Electrized )處理而能長 201134230 λ ji^/uu^5TWD1 27665-ltwf.doc/n 期保有靜電荷(Static Charges),而經充電後在材料内部可 產生駐電效果,因此可稱為駐極體振膜層。此駐極體層212 可為單層或多層介電材料所製成,而所述介電材料可為例 如氟化乙烯丙烯共聚物(FEP ,flu〇rinated ethylenepropylene)、聚四氟乙烯(PTFe , polytetrafluoethylene)、聚氟亞乙烯(pvDF,p〇lyvinylidene fluride)、cip彳刀含氟南分子聚合物(Fiu〇rjne p〇iymer)及其他 適當材料等等’而此介電材料内部包含微米或奈微米孔徑 的孔洞。由於駐極體層212係為介電材料經過電化處理 後,而能長期保有靜電荷及壓電性之振膜,並可使内部包 含奈微米孔洞以增加透光度及壓電特性,經電暈充電後在 材料内部產生具極性電荷(Dip〇iar charges )而產生駐電 效果。 上述的金屬薄膜電極214為了不影響振膜210的張力 與振動的效果’可以是一種極薄的金屬薄膜電極,在此所 界定的“極薄”為厚度介於約〇.2微米(micr0I1 meter 5 um) 到0.80毫米(millimeter,mm)之間,在一較佳實施例中厚 度約為0_2微来到0.4微米之間,可選擇約〇.3微米。 以駐極體層212注滿負電荷為例說明。當輸入的音源 訊號分別連接到具多個開孔的電極層220與金屬薄膜電極 214。當輸入的音源訊號為正電壓時’與揚聲器單體上駐極 體振膜的負電荷產生吸引力,而音源訊號為負電壓時,與 單體上正電荷產生排斥力,因此造成振膜21〇運動。 反之,當音源訊號電壓相位輸入改變時,同樣因為正 11 201134230 FMy/UU25TWDl 27665-ltwf.doc/n 電壓與揚聲器單體上駐極體振膜的負電荷產生吸引力,而 負電壓與單體上正電荷產生排斥力,振膜21〇運動方向將 相反°當駐極體振膜210藉由向著不同運動的方向運動 時’因壓縮周圍空氣而產生聲音輸出。 上述本實施例中的揚聲器單體結構200,在其周圍一 側或兩側可使用具有透氣防水的薄膜250包覆,例如材質 包括ePTFE(膨體聚四氟乙烯)材料的GORE-TEX (中文?) 薄膜等等’可防水氧的影響,造成駐極體層212所具有的 電荷洩漏而影響其駐電效果。 上述電極層220與振膜210之間,藉由相鄰支樓體240 之間形成振膜210的工作區域,也就是揚聲器產生共振音 場的腔室空間242。而音腔基材260與振膜210之間,藉 由相鄰音腔支撐體270之間形成振膜210的工作區域,也 就是揚聲器產生共振音場的腔室空間272。而不論是支撙 體240或是音腔支撐體270,其可以根據設計上的需求調 整配置方式、tIj度等的設計,另外音腔支樓體270的數目 可以相等、少於或多於支撐體240等等不同的設計。而支 撐體240或疋音腔支撐體270分別可以製作在電極層220 上或音腔基材260上。 本貫施例所提出的音腔結構,位於振膜21〇的金屬薄 膜電極214面的位置上,依揚聲器音頻設計的考量置入最 佳化的支撐體設計或置入類吸音綿的材料,苴可 方式、高度等的設計,而其外觀可以為任 +意形=置 邊框支撲體230在音腔結構位置所形成的腔室空間,可選6 S 201134230 __5TWD1 27665 彻fd〇c/n The various forms of the support or the height structure are placed on the opposite side of the sounding hole area, and the position of the sound chamber and the bearing body in the speaker element is I. The positional configuration is based on the design and configuration of the sound cavity support structure, a relative symmetry relationship. And when it comes to big help. Although the position of the sound chamber support is matched with the position configuration of the support body in a symmetrical relationship: ί:= The inside of the element is not required - the number of the sound cavity support can be measured and adjusted in quantity. It can be greater than or equal to the number of support bodies required on ^^10. ...], the planar electrostatic speaker cavity structure in the speaker 7L, in addition to the structure is simple and a lot of biotechnology for process integration. The output of the important structure of the 疋 面 扬声器 speaker is composed of the material _ , table _ shape, the capacitance value of the drive 乘 multiplied by the internal electric field size and the external wheel is inserted. j When the structural design of the flat-panel electrostatic speaker is light, thin, and can be pulled down, the sound (4) is set to be a traditional yoke design. Therefore, the present invention proposes the following embodiments, the two-faceted design = a sound chamber structure having characteristics of lightness, thinness, flexibility, etc., and is a sound cavity support body that is equivalent to a material on the sound cavity substrate. The sound chamber 201134230 r3iy/uu/5TWDl 27665-ltwf.doc/n can be fabricated on the substrate of the sound chamber or fabricated on the diaphragm electrode, respectively. The cavity electrode or the diaphragm electrode has two designs of adhesion or non-adhesion, or the sound cavity support is completed before being placed between the diaphragm electrode and the sound cavity substrate. The layout of the cavity support can be determined according to the electrostatic effect of the diaphragm or the audio response design. ~ The distribution of the sound cavity support body, considering the configuration combination of the support body in the planar electrostatic speaker structure, and placing the optimized design of the support body on the other side of the planar electrostatic speaker structure according to the design of the audio design. It can be designed in a configuration, height, and the like. The number of configurations of the cavity support may be equal, less or more than the number of supports in the planar electrostatic speaker element structure. In an alternative embodiment, the sound chamber can be filled with sound absorbing material to increase the depth and breadth of the sound field. The planar electrostatic speaker cavity structure proposed in the embodiment has a sound cavity support structure design in the sound cavity region, and is designed into an optimized sound cavity support body according to the design of the audio design, which can be configured. , height, etc. design. The configuration of the sound cavity support body can be any shape such as a dot shape, a grid shape or a cross shape, or a mixture of different types, etc., and the distance between the sound cavity support body and the sound cavity support body can be based on the audio. The design is designed to achieve the best configuration. The process of the above-mentioned sound cavity support body can be transferred or transferred to the sound cavity substrate, or directly printed on the sound cavity substrate by printing technology such as inkjet printing (Injet Printing) or direct printing method. For example, a method such as Screen Printing is formed. In another embodiment, the process of the support body is also 201134230 rDiv/uuzSTWDl 27665-ltwf.doc/n. The material can be directly bonded, and the cut body is made into the body and then placed in the electrode and the subtraction, and the support is shot. Take the design with _ (or open-cell metal electrode) adhesive (Adhesi〇n) or non-adhesive. In the case of another real towel, the mixed process can also be formed by secret method or 疋 photoresist exposure (4) (4) silk production, or _ turn mode. = The structure of the electrostatic electrostatic speaker structure of the present invention, the structure of the Yangshengsheng early body is a single-piece metal electrode and a monolithic charged continuous tape winding process, using a soft structure with an electret diaphragm 'Breakthrough the traditional production design process, the continuous type of roll-type, with stamping, die-casting, gluing, etc. to form the material of the coil material' so - can greatly reduce the cost of the existing speaker, and the factor can provide Industrial facilities such as large-area and irregular shapes have considerable applications for future (4) (4) life-related products, and this is also a major focus of soft electronic components. The bottom is to - specifically the structure of the speaker, but not the cypress 1. w Referring to Fig. 2, the speaker 11 monolithic structure forms a working area of the diaphragm between the two sides of the mother, that is, the speaker generates #'^field_room space' and the interior is configured with a plurality of specific designs. The two bodies are either in appearance or in the way they are configured. In the face of the sounding of the second sound = the sound cavity structure design proposed in this embodiment. The area j between the sounds that forms a diaphragm between the #_ neighboring cavity dragons is another chamber space in which the speaker produces a resonant sound field. The monolithic speaker unit structure includes a diaphragm 21G, an electric 1 track frame support body 23 having a plurality of openings, and an interposition between the electrode layer 22 and the diaphragm film 201134230 rDiy/uu25TWDl 27665-ltwf.doc/n Multiple branch bodies 240. On the other side of the diaphragm 210 facing the electrode layer 220, there is a sound chamber structure. The sound chamber structure is composed of the sound chamber substrate 260 and the sound chamber support body 270 between the diaphragm 210 and the sound chamber substrate 260. composition. The diaphragm 210 includes an electret layer 212 and a metal thin film electrode 214. One side surface 212a of the electret layer 212 is connected to the frame support body 230 and the support body 240, and the other side surface 212b is electrically connected to the metal film electrode 214. . The electrode layer 220 having a plurality of openings may be made of a metal material. In an embodiment, the surface may be coated with a layer of metal via a resilient material such as paper or a very thin layer of non-conductive material. The film is finished. When the ruthenium electrode layer 220 is a non-conductive material or a metal film, the non-conductive material may be a non-conductive material such as plastic, rubber, paper, non-conductive cloth (cotton fiber, polymer fiber), and the metal film may be Ming, gold, silver, copper and other pure metal materials or alloys thereof, or bimetallic materials such as Ni/Au, or Indium Tin Oxide (ITO) or Indium Zinc Oxide (IZ0). One or a combination thereof' is a polymer conductive material PEDOT and the like. In another embodiment, when the electrode layer 220 is composed of a conductive material, it may be, for example, a metal (iron, copper, aluminum, or the like or an alloy thereof), a conductive cloth (a metal fiber, an oxidized metal fiber, a carbon fiber, a graphite fiber). One of them. The material of the electret layer 212 can be selected from dielectric materials (Dieleetrie Materials). The dielectric material can be electrostatically charged (Electrized) and can have a static charge (2011). Therefore, it can be called an electret diaphragm layer. The electret layer 212 can be made of a single layer or a plurality of dielectric materials, and the dielectric material can be, for example, a fluorinated ethylene propylene copolymer (FEP), a polytetrafluoroethylene (PTFe, polytetrafluoethylene). ), polyfluoroethylene (pvDF, p〇lyvinylidene fluride), cip 彳 含氟 南 南 分子 分子 分子 分子 分子 分子 分子 南 南 含氟 含氟 含氟 含氟 含氟 含氟 含氟 含氟 含氟 含氟 含氟 含氟 含氟 含氟 而 而 而 而 而 而 而 而 而 而 而 而 而 而 而Holes in the aperture. Since the electret layer 212 is a dielectric material that has been subjected to an electrochemical treatment, it can retain a static charge and a piezoelectric film for a long period of time, and can contain inner micron holes to increase transmittance and piezoelectric characteristics, via corona. After charging, a polar charge (Dip〇iar charges) is generated inside the material to generate a resident effect. The above-mentioned metal thin film electrode 214 may be an extremely thin metal thin film electrode in order not to affect the tension and vibration effect of the diaphragm 210, and the "very thin" defined herein has a thickness of about 〇.2 μm (micr0I1 meter) 5 um) to between 0.80 millimeters (millimeter, mm), in a preferred embodiment, the thickness is between about 0 and 2 micrometers and between 0.4 micrometers, optionally about 0.3 micrometers. The electret layer 212 is filled with a negative charge as an example. When the input sound source signals are respectively connected to the electrode layer 220 having a plurality of openings and the metal film electrode 214. When the input sound source signal is a positive voltage, 'the negative charge of the electret diaphragm on the speaker unit generates an attractive force, and when the sound source signal is a negative voltage, a positive force is generated with the positive charge on the cell, thereby causing the diaphragm 21 〇 exercise. Conversely, when the phase input of the source signal voltage changes, it is also because the positive voltage of the 11 201134230 FMy/UU25TWDl 27665-ltwf.doc/n and the negative charge of the electret diaphragm on the speaker unit are attractive, while the negative voltage and the monomer The positive positive charge generates a repulsive force, and the diaphragm 21 〇 moves in the opposite direction. When the electret diaphragm 210 moves in the direction of different motions, the sound output is generated by compressing the surrounding air. The speaker unit structure 200 in the above embodiment may be covered with a film 250 having a gas permeable and waterproof shape on one or both sides thereof, for example, GORE-TEX made of ePTFE (expanded polytetrafluoroethylene) material. ?) The film or the like 'is resistant to water and oxygen, causing the charge leakage of the electret layer 212 to affect its electrification effect. Between the electrode layer 220 and the diaphragm 210, a working space of the diaphragm 210 is formed between the adjacent building blocks 240, that is, a chamber space 242 in which a resonance sound field is generated by the speaker. Between the cavity substrate 260 and the diaphragm 210, a working area of the diaphragm 210 is formed between the adjacent chamber supports 270, that is, a chamber space 272 in which the speaker generates a resonant sound field. Whether it is the support body 240 or the sound cavity support body 270, the design of the configuration, the tIj degree, etc. can be adjusted according to the design requirements, and the number of the sound cavity support body 270 can be equal, less or more than the support. Body 240 and so on different designs. The support body 240 or the snoring cavity support 270 can be formed on the electrode layer 220 or on the sound cavity substrate 260, respectively. The sound cavity structure proposed in the present embodiment is located at the position of the metal film electrode 214 of the diaphragm 21〇, and is placed in an optimized support design or a material for the sound absorbing cotton according to the consideration of the speaker audio design.苴 can be designed, height, etc., and its appearance can be any + meaning = frame space of the frame body 230 in the cavity structure position, optional

12 S 201134230 /uu^5TWDl 27665-1 twf.doc/n 擇性地具有透音孔272,可以釋放產生聲音的壓力,势乂 更好的音場效果。 ""k 底下以不同實施例加以說明。 請參照圖3,音腔結構300是由音腔基材31〇與介於 振膜與音腔基材310之間的音腔支撐體32〇所組成,而邊 框支樓體330則是圍著音腔結構3〇〇的侧邊。此實施例的 配置方式是振膜電極的雜支撑體,也就是各音腔支樓體 320之間以陣列方式等距離排列。各音腔支樓體32〇之間 距離可依據音頻設計採一最佳配置。 而請參照圖4,音腔結構400是由音腔基材41〇與介 於振膜與音腔基材彻之間的音腔支樓體·所組成,而 邊框支樓體430則是圍著音腔結構400的側邊。此實施例 的配置方式是振膜電極的點狀支㈣,但各音腔支撐體 420之間比圖3的方式距離更大,而且以間隔交錯方式等 距離排列。 π參照圖5,音腔結構5〇〇是由音腔基材51〇與介於 ^膜與a腔基材51〇之間的條狀音腔支撐體交錯排列所組 香而邊框支撐體53〇則是圍著音腔結構獅的側邊。此 一=的配置方式是以條狀音腔支撐體交錯排列,例如圖 音腔支擇體520與525。而條狀音腔支樓體的寬 ΐ佳L $之間的橫向或是縱向距離都可依據音頻設計採一 顧二 201134230 rji^/uu^5TWDl 27665-ltwf.doc/n 成,而邊框支撐體630則是圍著音腔結構6〇()的側邊。此 實施例的配置方式以條狀音腔支撐體交錯排列,例如圖示 的條狀音腔支撐體620與625,但與圖5相比較,條狀音 腔支樓體的寬度較小’但是彼此之間的橫向或是縱向距離 比車父大,此為依據音頻設計採不同的配置。 請參照圖7,音腔結構7〇〇是由音腔基材710與介於 振膜與音腔基材710之間的音腔支撐體72〇所組成,而邊 框支撐體730則是圍著音腔結構7〇〇的側邊。此實施例的 配置方式是振膜電極的十字狀支撐體,也就是各音腔支撐 體720之間以陣列方式等距離排列。各音腔支撐體72〇之 間距離可依據音頻設計採一最佳配置。 而請參照圖8 ’音腔結構8〇〇是由音腔基材810與介 於振膜與音腔基材810之間的音腔支撐體82〇所組成,而 邊框支撐體830則是圍著音腔結構8〇〇的侧邊。此實施例 的配置方式是振膜電極的十字狀支撐體,但與圖7相比 較’十字狀支撐體的寬度較小但長度比較長,而彼此之間 的橫向或是縱向距離比較大,此為依據音頻設計採不同的 配置。 晴參照圖8,在另一實施例中,音腔結構900是由音 腔基材910與介於振膜940與音腔基材910之間的音腔支 標體920所組成’而邊框支撐體930則是圍著音腔結構900 的側邊。此實施例的配置方式,音腔支撐體920之間的距 離都不同,可以根據揚聲器單體結構的設計而調整彼此的 距離’但並不需要一致。 201134230 rjiy/u^STWDl 27665-ltwf.doc/n i? 柄明已以較佳實施例揭露如上,然其並非用以 脫=:,Ϊ何所屬,術領域中具有通常知識者,在不 因 之圍内’當可作些許之更動與潤飾, I明之保護範圍當视後附之申請專利範圍所界定者 馬竿。 圖式簡單說明】 圖習知之-種電聲轉換器結構。 圖 圖2疋依照本發明實施例的揚聲器單體結構別面示意 【主要元件符號說明】 110、120 :固定電極 130 .振膜(Vibrating Film) 140 :固定結構 150 I變壓器 160 :交流電壓源 200 :揚聲器單體結構 210 :振膜 220 :金屬電極 230 :邊框支撐體 240 :支撐體 201134230 /uu^STWDl 27665· 1 twf.doc/n 250 :薄膜 260 :音腔基材 270 :音腔支撐體 272 :透音孔 400、500、600、700、800、900 :音腔結構 410、510、610、710、810、910 :音腔基材 420、520、620、720、820、920 :音腔支撐體 430、530、630、730、830、930 :邊框支撐體12 S 201134230 /uu^5TWDl 27665-1 twf.doc/n Selectively has a sound hole 272, which can release the pressure of the sound, which is better for the sound field effect. ""k is explained in different embodiments. Referring to FIG. 3, the sound chamber structure 300 is composed of a sound chamber substrate 31 and a sound chamber support 32 between the diaphragm and the sound chamber substrate 310, and the frame branch body 330 is surrounded. The side of the sound chamber structure 3〇〇. The configuration of this embodiment is a hybrid support of the diaphragm electrodes, that is, the sound chamber branches 320 are arranged equidistantly in an array. The distance between the 32 〇 of each sound chamber can be optimally configured according to the audio design. Referring to FIG. 4, the sound chamber structure 400 is composed of a sound chamber substrate 41 and a sound chamber supporting body between the diaphragm and the sound chamber substrate, and the frame branch body 430 is surrounded. The sides of the sound cavity structure 400 are placed. The arrangement of this embodiment is a point-like branch (4) of the diaphragm electrode, but the distance between the respective sound chamber support bodies 420 is larger than that of the mode of Fig. 3, and is arranged at equal intervals in a staggered manner. π Referring to FIG. 5, the sound chamber structure 5 is a mixture of the sound chamber substrate 51 and the strip-shaped sound chamber support between the film and the a cavity substrate 51, and the frame support 53 is arranged. The 〇 is the side of the lion that surrounds the sound chamber structure. The configuration of this = is staggered by strip-shaped cavity support bodies, such as the sound cavity support bodies 520 and 525. The lateral or longitudinal distance between the width and the L L of the strip-shaped sound chamber can be based on the audio design of 201134230 rji^/uu^5TWDl 27665-ltwf.doc/n, and the frame support 630 is the side of the sound cavity structure 6 〇 (). The configuration of this embodiment is staggered in a strip-shaped cavity support, such as the illustrated strip-like chamber supports 620 and 625, but the width of the strip-shaped chamber is smaller than that of Figure 5 'but The horizontal or vertical distance between each other is larger than that of the car, which is a different configuration depending on the audio design. Referring to FIG. 7, the sound chamber structure 7A is composed of a sound chamber substrate 710 and a sound chamber support body 72 between the diaphragm and the sound chamber substrate 710, and the frame support body 730 is surrounded. The side of the sound chamber structure 7〇〇. The arrangement of this embodiment is a cross-shaped support of the diaphragm electrodes, that is, the respective chamber supports 720 are arranged equidistantly in an array. The distance between the chamber supports 72 can be optimally configured according to the audio design. Referring to FIG. 8 , the sound cavity structure 8 is composed of the sound cavity substrate 810 and the sound cavity support 82 between the diaphragm and the sound cavity substrate 810 , and the frame support body 830 is surrounded by The side of the sound cavity structure is 8 inches. The configuration of this embodiment is a cross-shaped support of the diaphragm electrode, but compared with FIG. 7, the cross-shaped support has a smaller width but a longer length, and the lateral or longitudinal distance between the two is relatively large. Different configurations are available for audio design. Referring to FIG. 8, in another embodiment, the sound cavity structure 900 is composed of a sound cavity substrate 910 and a sound cavity support body 920 interposed between the diaphragm 940 and the sound cavity substrate 910. The body 930 is around the side of the sound cavity structure 900. The configuration of this embodiment is such that the distance between the sound chamber support bodies 920 is different, and the distances from each other can be adjusted according to the design of the speaker unit structure, but need not be uniform. 201134230 rjiy/u^STWDl 27665-ltwf.doc/ni? The handle has been disclosed above in the preferred embodiment, but it is not used to remove =:, what belongs to, the general knowledge in the field of surgery, not to In the area, when there are some changes and refinements, I Ming’s scope of protection is defined by the scope of the patent application. Brief description of the diagram] The figure is known as a kind of electroacoustic transducer structure. FIG. 2 is a schematic diagram showing the structure of a speaker unit according to an embodiment of the present invention. [Main component symbol description] 110, 120: fixed electrode 130. Vibrating film 140: fixed structure 150 I transformer 160: AC voltage source 200 : speaker unit structure 210 : diaphragm 220 : metal electrode 230 : frame support body 240 : support body 201134230 / uu ^ STWDl 27665 · 1 twf.doc / n 250 : film 260 : sound chamber substrate 270 : sound chamber support 272: sound transmission holes 400, 500, 600, 700, 800, 900: sound chamber structure 410, 510, 610, 710, 810, 910: sound chamber substrate 420, 520, 620, 720, 820, 920: sound chamber Support body 430, 530, 630, 730, 830, 930: frame support

16 S16 S

Claims (1)

201134230 rji?/wx5TWDl 27665-ltwf.doc/n 七、申請專利範圍: 1. 一種適用於平面揚聲器之支撐體,該平面揚聲器包 括一振膜與一電極,該電極包括多個開孔以及一非開孔區 域,其中該些支撐體配置於該電極非開孔區域與該振膜之 間丄该些支撐體的配置佈局方式,為調整相鄰該些支撐體 的兩度與相鄰該些支撐體的距離。 2. 如申請專利範圍第1項所述之支撐體,其中該電極 ,一具有多條交錯配置的條狀電極,其中該些條狀電極之 交錯位置的非開孔區域,則選擇性地配置該些支撐體。 。3.如申請專利範圍第1項所述之支撐體,其中該此支 撐體為三角柱形、圓柱形、矩形或其組合。 — 4. 如申請專利範圍第1項所述之支撐體,其中該支樓 體係採用轉印方式形成於該電極或該振膜上。 牙 5. 如申請專利範圍第4項所述之支撐體’其中該轉印 方式包括噴墨列印或網版印刷。 6. 如申請專利範圍第1項所述之支撐體,其中該些支 樓體的是採用轉貼方式形成於該電極或該振犋上。— 7. 如申請專利範圍第6項所述之支撐體,其中該轉貼 方式為該些支撐體與該振膜或電極黏著。 8. 如申請專利範圍第6項所述之支撐體,其中該轉貼 方式為該些支撐體與該振膜或電極不黏著。 9. 如申請專利範圍第1項所述之支撐體,其中該些支 撐體的是經由li刻方式形成於該電極或該振膜上。 10. 如申請專利範圍第丨項所述之支撐體,其中該些支 201134230 r31y/uy25TWDl 27665-ltwf.doc/n 撐體的是經由光阻曝光顯影(photolithography)方式形成 於該電極或該振膜上。 11. 如申請專利範圍第1項所述之支撐體’其中該些支 撐體為透明且可挽曲的材質。 12. 如申請專利範圍第1項所述之支撐體,其中該些支 撐體為點狀結構、柵狀結構、或類十字狀結構。 13. —種支樓體配置方法,適用於一平面揚聲器,該平 面揚聲器結構包括一振膜與一電極,該電極包括多個開孔 以及一非開孔區域,該方法包括: =置多個支撐體於該電極的非開孔區域與該振膜之 間,藉以防止該振膜與該電極之接觸,其中,該些支撐體 的配置佈局方式’為調整相鄰該些支撐體的高度與相鄰該 些支標體的距離。 14. 如申請專利範圍第13項所述之支撐體配置方法, 包括轉印方式將該些支撐體形成於該電極或該振膜上。 15. 如申請專利範圍第14項所述之支撐體配置方法, 其中該轉印=式包括噴墨列印或網版印刷其中之一。 如申請專利範圍第13項所述之支撐體配置方法, &括無方切該些支龍形成於該電極或該振膜 上0 、 盆:17·如申請專利範圍帛16項所述之支撑體配置方法, •^中該轉貼方式為該些切體與該振膜或電極黏著。 盆队如申請專利範圍第I6項所述之支撑體配置方法, 其中遠轉貼方^為該些切體無娜或電極不黏著。 18 S 201134230 r j π /wz5TWDl 27665-ltwf.doc/n 19. 如申請專利範圍第13項所述之支撐體配置方法, 包括經由触刻該電極或該振膜上的一材料層而形成該些支 撐體。 20. 如申請專利範圍第19項所述之支撐體配置方法, 其中經由光阻曝光顯影(Photolithography)方式將該些支 撐體形成於該電極或該振膜上。 21. 如申請專利範圍第13項所述之支撐體配置方法, 其中當該電極包括多條交錯配置的條狀電極時,該些條狀 電極之交錯位置的該非開孔區域選擇性地配置該些支撐 19201134230 rji?/wx5TWDl 27665-ltwf.doc/n VII. Patent Application Range: 1. A support body suitable for a flat speaker, the planar speaker comprising a diaphragm and an electrode, the electrode comprising a plurality of openings and a non- An arrangement area of the support body disposed between the non-opening area of the electrode and the diaphragm, and the arrangement of the support bodies is adjusted to adjust two degrees adjacent to the support body and adjacent support The distance of the body. 2. The support according to claim 1, wherein the electrode is a strip electrode having a plurality of staggered configurations, wherein the non-apert regions of the staggered positions of the strip electrodes are selectively disposed These supports. . 3. The support of claim 1, wherein the support is triangular, cylindrical, rectangular or a combination thereof. 4. The support according to claim 1, wherein the branch system is formed on the electrode or the diaphragm by a transfer method. 5. The support as described in claim 4, wherein the transfer method comprises ink jet printing or screen printing. 6. The support body of claim 1, wherein the plurality of support bodies are formed on the electrode or the vibrating body by means of a reposition. 7. The support of claim 6, wherein the transfer is such that the support is adhered to the diaphragm or electrode. 8. The support of claim 6, wherein the transfer is such that the support does not adhere to the diaphragm or electrode. 9. The support of claim 1, wherein the support is formed on the electrode or the diaphragm by engraving. 10. The support according to claim 2, wherein the branches of the 201134230 r31y/uy25TWD1 27665-ltwf.doc/n support are formed on the electrode or the vibration via photoresist photolithography. On the membrane. 11. The support according to claim 1, wherein the support is a transparent and bendable material. 12. The support of claim 1, wherein the support is a punctiform structure, a grid structure, or a cross-like structure. 13. A method for configuring a building body, suitable for a flat speaker, the planar speaker structure comprising a diaphragm and an electrode, the electrode comprising a plurality of openings and a non-opening area, the method comprising: The support body is disposed between the non-apert region of the electrode and the diaphragm, thereby preventing contact between the diaphragm and the electrode, wherein the arrangement of the support bodies is configured to adjust the height of adjacent support bodies The distance between the adjacent support bodies. 14. The support configuration method according to claim 13, comprising a transfer method for forming the support on the electrode or the diaphragm. 15. The support configuration method according to claim 14, wherein the transfer=type comprises one of inkjet printing or screen printing. The support body configuration method according to claim 13 of the patent application, wherein the branch is formed on the electrode or the diaphragm, and the basin is: 17 as described in claim 16 The support body is arranged in the method, and the transfer method is that the cut bodies are adhered to the diaphragm or the electrode. The basin team is in the method of configuring the support body as described in claim 1 of the patent scope, wherein the far-moving patch is such that the cut bodies are not covered or the electrodes are not adhered. 18 S 201134230 rj π /wz5TWDl 27665-ltwf.doc/n 19. The method of configuring a support according to claim 13, comprising forming the plurality of material layers by touching the electrode or the diaphragm Support body. 20. The support configuration method according to claim 19, wherein the support is formed on the electrode or the diaphragm via a photolithography method. The support configuration method according to claim 13, wherein when the electrode includes a plurality of staggered strip electrodes, the non-apert regions of the staggered positions of the strip electrodes are selectively disposed Some support 19
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI473505B (en) * 2012-03-09 2015-02-11 Taiwan Electrets Electronics Co Ltd Packages for electret electroacoustic transducers
TWI491272B (en) * 2012-03-09 2015-07-01 Taiwan Electrets Electronics Co Ltd Double-layered electret electroacoustic transducers and electronic devices containing the same
TWI563522B (en) * 2015-07-24 2016-12-21 Fortune Electric Co Ltd

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI473505B (en) * 2012-03-09 2015-02-11 Taiwan Electrets Electronics Co Ltd Packages for electret electroacoustic transducers
TWI491272B (en) * 2012-03-09 2015-07-01 Taiwan Electrets Electronics Co Ltd Double-layered electret electroacoustic transducers and electronic devices containing the same
TWI563522B (en) * 2015-07-24 2016-12-21 Fortune Electric Co Ltd

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