201132809 六、發明說明： 【發明所屬之技術領域】 本發明係關於藍寶石單結晶之製造裝置，更詳細 的說’乃關於一種利用單太& 之製造裝置者。向凝固法之藍寶石單結晶 【先前技術】 藍寶石可應用於種種用途，其中做為led製造 用之藍寳石基板的用途者，漸趨重要。亦即在藍寶石 基板上生長-層緩衝層和一氮化鉀系覆膜之磊晶，而 得到LED發光基板，成為主流。 為此’希望有能以良好效率穩定生產藍寶石單結 晶之製造裝置。 LED製造用的藍寶石基板，大多數是e面方位 (0001)基板。向來工業上所㈣的藍寶石單结晶之 造方法，有緣端限定成長（EFG)法、開羅多孔（κρ)法、 卻克拉爾斯基（CZ)法等，但如想獲得直徑3吋以上之 結晶，就發生種種結晶上的缺陷，因而就以生產a 軸方位成長的單結晶來代替。為了從a軸成長藍寶 石結晶加工成為C軸藍寶石結晶坑，必須，從橫方向 挖取結晶，加工不易，又因不能利用的部分太多，以 致發生生產良率不佳的問題。 氧化物單結晶之製造方法中，有所謂垂直布力茲 曼法（垂直溫度傾斜凝固法）較為著名。此垂直布力茲 201132809 曼法’為了能輕易取出其所生成的單結晶，乃使用厚 度較薄的坩堝。為了從像藍寶石那樣高熔點的熔液中 獲得單結晶，就需要厚度薄而且高溫下能維持強度及 化學性的坩堝，故先前技術中曾揭示有關於這種坩堝 的資料（參照專利文獻1)。 〔先行技術文獻〕： 專利文獻1 :特開2007-119297號公報 【發明内容】 尤其，為了以垂直布力茲曼法之單結晶製造裝置 獲得沒有結晶缺陷的藍寶石單結晶，重要的是防止種 子結晶軸（c軸）的傾斜，不致於使種子結晶熔融、再 結晶時發生其結晶方位的偏差。 於此，本案申請人舉例說明經試作及檢討後之藍 寶石單結晶之製造裝置101(參照第6圖），另一方面 就屬於凝固法的垂直布力茲曼法藍寶石單結晶之製 造過程（參照第7(a)圖〜第^(f)圖）加以說明。 該藍寶石單結晶之製造裝置101中，具備有流通 冷卻水用的筒狀被套112，及在為基座113所密閉的 空間内形成的配置有圓筒加熱器114與斷熱部材116 之熱區118的育成爐11〇。又，容納種子結晶124及 原料126的坩堝120，係成為由驅動轴1〇4做上下移 動的構造。 藍寶石單結晶之製造過程，首先加入藍寶石種子 201132809 結晶124與原料126於坩堝120内（第7(a)圖）。 為育成爐110的圓筒加熱器114所包圍之熱區， 其溫度被控制在跨過藍寶石熔點，其上側在炫點'溫°°度 以上，下側在熔點溫度以下之溫度（第7(f)圖）。又 裝有藍寶石種子結晶124與原料ι26的掛禍 120,其熱區被從下部提昇到上部側，使原料126熔 解，在種子結晶124上部炫解之際停止上昇（第7(匕 圖），其次緩慢以所需速度下降（第7(c)圖）。於是沿著 種子結晶124之結晶面，有熔液徐徐結晶 7(0、⑷圖）。 ^ 種子結晶124配置於坩堝120中，其c面成水平 狀，熔液沿此c面，亦即c軸方向成長。 結晶化後，最好在同樣的育成爐11〇内，實施退 火處理過程。更具體的說，減低對圓筒加熱器114的 ，出使其溫度降下至所需溫度（例如1800。〇,同時提 同坩堝120之溫度，使其溫度上昇（請參第7(e)圖）至 車乂圓筒加熱器114中間部之其他部位溫度傾度為小 :句…區128(s青參第7(f)圖），而使其在此均熱區 經歷所需時間（例如1小時），保持此狀態在堆禍12〇 實知藍寶石單結晶之退火處理。但如於殘留應力較 J之成長結晶之場合，並不一定須退火處理。 時，此2 1做為坩堝120的形成材料者，特別使用鎢 ，於結晶化過程、後述之退火過程及冷卻過程時， -f-g- *1 Ο 同之内壁面與藍寶石單結晶之外壁面成 6 201132809 $非接觸狀態。由是藍寶石不受外部應力而可防止藍 寶石發生龜裂。又因在取出結晶之際 120内壁面之間未加有應力，結晶之取出不受ΪΓ 同時坩堝120也不致於變形而可反覆使用。 又，結晶化後，在同一育成爐u 在…。内逕行做退火處理，因而可迅== :退火處理二可得以除去結晶内部熱應力而獲得結晶 缺陷較少的高品質藍寳石單結晶。 曰 所製者’利用藍寶石單結晶之製造裝置期 所製k的藍寶石單結晶照片(X光形貌照片)如第8⑷ =(:)Γ示。此外，第8⑷圖為平二 LC圖照片。由這照片可明瞭，如利 製造裝置101，就可能製造出較藉 少的::所製造的藍寶石單結晶之結晶缺陷較 然而，第8⑷圖及第吵)圖所示 :二其:傍，可看出有稍呈白色二 χ色刀，被稱呼為小傾角境界的結晶境 界\，：：像是在與中心部方位不同的結晶所成長的； 二：：小傾角境界乃相當於所謂結晶缺陷，想要獲 二為1:的藍寶石單結晶的場合，應屬於勢 的。卩分，故須防止其發生。 置製ίίΓΓ者們，於利用藍寶石單結晶之製造裝 表1¾藍寶石之單么士曰吐/ΑΛ J. 早、、·口日日時，從事追究小傾角境界發生 201132809 =因，完成追究結果同時，終於發展出可防止像小 *角境界般的結晶缺陷之藍寶石單結晶之製造裝置。 鑑於上述情形，本發明之目的在提供一種藍寶石 单結晶之製造裝置，其能味L ^ 衣夏昇此防止起因於結晶方 結晶缺陷之發生者。 1爾左的 〔問題解決之手段〕 本發明之-實施形態中，以下文中所揭示之解決 手段來解決上揭課題。 本發明所揭示之藍寶石單結晶之製造裝置，乃一 種收容種子結晶與原料於以支持部材所支持的掛禍 内’而配置該掛禍於育成爐内之筒狀加熱器内，藉筒 狀加熱器加熱而轉原料及種子結晶之—部分使其 結晶化，在如此之藍寶石單結晶之製造裝置中，備有 以圓環狀冷卻該杯狀㈣所定外周位置的 〔本發明之效果〕 胃 依照所揭示之藍寶石單結晶之製造裝置，可以防 止起因於結晶方位偏差的結晶缺陷。 【實施方式】 下文中參照附圖詳細說明本發明的較佳實施例。 第1圖為藍寶石單結晶之製造裝置正面斷 面圖（概略圖）。本實施例的藍寶石單結晶之製造裝置 1具備有眾所知悉的以垂直布力茲曼法製造藍寶石單 結晶之育成爐10。茲簡單說明其構造如下：育成爐 201132809 1〇係由流通冷卻水用筒狀被套12及為底座13所密 閉的空間内’配設一個或複數個上下延伸的筒狀加熱 器，構成者。在本實施例的形態中，使用一個圓筒加 …器14。此外，育成爐的尺寸，當然因所製造單 、〇日日=小而異，其中一例為直徑〇.5m，高lm左右。 一育成爐10内，設有未圖示的開口部二處，有惰 性氣體，較宜者為氬氣供應其令，育成結晶時，育成 爐10内充滿惰性氣體。 此外，月成爐ίο内於複數處所配設有未圖示的 溫度計’用以計測爐内各處溫度。 ,在本實施例中，圓筒加熱器14係以碳加熱器 所形成，經控制部（未圖示）控制通電而調節溫度。 圓筒加熱器14周圍配置有斷熱部材16，由斷熱 瘁材16包圍而形成熱區18。藉控制圓筒加熱器Η 的通電量，而可形成熱區18内上下方向的溫度傾斜。 做為-例者’斷熱部材16係以碳氈製成。由於 可利用碳氈，解決了先前所使用斷熱部材材料，如陶 究、氧化鍅會在高溫下龜裂的問題。 圖中符號20為形成杯狀的坩堝，而被固定於 =動轴4的先端之支持部材3所支持2〇隨驅 動軸4之上下移動而可在圓筒加熱器14内上下 動。又，可隨驅動軸4在軸線周圍之回轉，而 加熱器14内回轉。 靖 另一方面，驅動軸4連接於後述之冷卻軸5 201132809 藉未圖示之球形螺絲做上下移動。由是坩堝2〇被精 密地控制其上昇及下降速度而做上下移動。此外，育 成爐10及底部的斷熱部材16等，設有插通驅動軸4 用的構造（貫通孔等）。 依照上揭構成，在坩堝20内收容種子結晶及原 料，配置坩堝20於育成爐1〇内之圓筒加熱器14 内，以圓筒加熱器14加熱，熔解原料6及種子結晶 的一部分，同時形成上高下低的溫度傾斜於圓筒加熱 器14内，透過驅動軸4的上下移動，順次將坩堝2〇 内之熔液結晶化，即可實施藍寶石單結晶之製造。 此外，使用本實施形態的藍寶石單結晶之製造裝 置1’以垂直布力兹曼法製造藍f石單結晶的過程， 與前述第7⑷圖〜» 7(b)圓所述過程基本上相同，故 省略說明。 於是，做為藍寶石單結晶之製造裝置i的特徵構 成者’掛禍20係由熱傳導性材料作成，其外周面上 所疋位置具有放射狀突出之凸周部21。 齡二的凸周部21’如第2⑷圖之正面 斷面圖及第2(b)圖之底面圖所示’沿著㈣20之外 周面以環狀形成，同時其斷面形成台形狀 二 面形狀並非只限定於台形，亦可成斷 等。但是最好具備有可與後述之支持部材3做:= 之一面（本實施形態中為下面&)。 此外’做為上揭掛蜗20之形成材料者’最好選 201132809 擇-種材料，其能完全不發生起因於坩堝2〇之線膨 脹係數與所製造之藍寳石單結晶成長軸成垂直方向 的線膨脹係數之差異引起的相互應力於掛禍及藍 寶石單結晶中。或者其線膨脹係數能避免藍 晶發生起因於相互應力引起的結晶缺陷，掛禍也：； 相互應力而生變形者。 或者最好選擇一種材料做為坩堝2〇的形成材 :斗，其在藍寶石溶點與常溫兩點間的平均線膨脹係 J於所裝造藍寶石單結晶成長軸成垂直方向的藍 寶石熔點與常溫兩點間的平均線膨脹係數者。 或者最好選擇一種材料做為坩堝2〇的形成材 料’其在藍寶石熔點（2〇5(rc)至常溫間之平均線膨 脹係數，經常小於所製造藍寶石單結晶成長軸成垂直 方向的藍寶石平均線膨脹係數者。 上揭各種坩堝材料者，有鎢、鎢鉬合金、鉬等。 尤其鎢在各溫度下，其線膨脹係數小於藍寶石， 因此如使用以這些材料做成的掛禍，則在後述的结晶 化過程、退火處理過程、冷卻過程時，就成為收縮率 小於藍寶叾，坩堝20的内壁面與藍寶石單結晶外壁 面成為非接觸狀態，藍寶石不受壓力，因而可防止藍 寶石的龜裂。 - 另一方面，支持部材3以熱傳導性材料形成，具 『對坩堝20之凸周部21成圓環狀面接觸以支持坩堝 的支持面。帛1圖、第3⑷圖為平面圖，第3⑼ 201132809 圖為正面斷面圖’如各圖所示，在本實施形態中，支 持。卩材3形成杯狀’上端面3a對掛場20之凸周部 21之下面21a成面接觸，而成支持坩堝2〇的支持面。 做為一例者，支持部材3以與坩堝20同樣材料 形成。亦即最好選用鎢、鎢鉬合金、鉬等材料。 於此，本實施形態中的藍寶石單結晶之製造裝 置，其構成上的特徵為具有以圓環狀冷卻坩堝2〇所 定外周位置的冷卻機構。 在一實施形態中，該冷卻機構的構成具有坩堝 2〇之凸周部21，及以圓環狀對該凸周部21面接觸而 支持坩堝20的支持部材3。此時坩堝2〇之下面2〇a 與支持部材3,以留有間隙方式配設（參照第i圖）。 依此構成，產生從凸周部21至支持部材3之熱 移動（支持部材3的吸熱作用）。由是產生以圓環狀冷 部坩堝20所定外周位置（本實施形態中為凸周部21 的形成位置）的作用。 此外，從凸周部21移動至支持部材3之熱，再 由支持部材3移動至驅動軸4。這些熱移動作用之發 生，乃由於圓筒加熱器14使熱區18内產生溫度傾 斜，坩堝20之溫度相對提高，支持部材3的溫：較 低於坩堝20的溫度，加以驅動軸4的溫度較低於支 持部材3的溫度所致。 再者，本實施形態中的藍寶石單結晶之製造裝置 1，其構成中具有冷卻驅動軸4用的冷卻部材。 201132809 在一實施形態中，冷卻部材為内部具有循環管路 5!的軸狀部材，也是該管路十流㉟冷媒（例#冷卻水） 以進行冷卻之冷卻軸5。冷卻軸5之上端部固定有驅 動抽4。 藉做為冷卻部材的冷卻軸5,產生對驅動軸4的 吸熱作用，可減低驅動轴4的溫度。由是可以促進從 支持部材3向驅動軸4的熱移動作用。也就是促進支 持部材3的冷卻，結果’促進從凸周部。至支持部 材3的熱移動，冷卻機構的冷卻作用獲得加強。 加之’藉流通於循環管路51内之冷媒溫度控 希J獲得谷易控制該冷卻作用之效果。 此外’以圓環狀冷卻掛禍2〇所定外周位置的冷 部機構，並非限定於上揭實施例，例如即使坩堝％ 不具備凸周部21的杯狀，但以圓環狀冷卻_ 2〇外 =，或底面20a之周緣部的構成，也有能得到同 樣效果的場合。做為具體構成例者，有將支 牴接於該處的構造（未圖示）。 、 如上揭情形，依本實施形態的藍寶石翠結晶 造裝置！，可冷卻掛禍2〇所定外周位置，藉此防止 在結晶外周部發生小傾角境界等缺陷，而得到高口暂 之藍寶石單結晶。關於此點，下文中將加以詳細說1 於：明上揭效果之際，首先說明本案發明 查明之發生小傾角境界原因。做為—例者，藉藍寶石 単結晶之製造裝置繼（參照第6圖）所製造之藍寶石 13 201132809 單結晶之照片（第8⑷圖、帛8(b)圖）之觀察，其 部有白色化之凸狀圓弧曲線。這是種子結晶與所: 結晶間之界面。又，向外周追縱該凸狀圓弧曲線二 :線：點：刀’即結晶之下端部，而且是周緣 置，發現有白色化部分（第8(a)圖及帛吵）圓中 部）。亦即在It B部產生與種子結晶方位 晶。可推想是因以該異方結晶為基盤，在其上方^ 結晶之育成’以致發生小傾角境 圖…)。尤其是在結晶之下端部而且)又是=) =生白色化部分（第8⑷圖及第8(b)圖中3部)緣= =子結晶在㈣難（參照第7(b)圖）中，因 融而浸入該種子結晶下端部， P熔 查明為其原因。同時種子結晶與所育成J 3面(凸狀圓弧曲線)，於達到種子結晶4;: 子二=合，發生浸入現象，亦經查明。此由於種 的原因。 差將成為月成結晶龜裂 由是於種子結晶熔融過程中 熔融而進入嗲種程中為了防止因外周部 與所育端部，就應防止種子結晶 3成..，明間之界面（凸狀圓狐曲 其近傍’此事亦業經查明。可想到= 加熱器内上昇之量。 向乙長）’減少坩堝在 然而該方法需有較大的種子結晶，則發生成本大 14 201132809 而所月成之結晶量變小之問題。 另一方面，如將藍寶石單結晶之製造裝置1〇1 (坩 堝120_近傍）的溫度分佈以等溫線圖（濃色上方為高溫 處）>表不時，則有如第9圖之凸形狀，經查明此乃規 約著種子結晶與所育成結晶間界面(凸狀圓弧曲線) 之形狀。 亦即防止種子結晶與所育成結晶間界面（凸狀圓 =線）達到種子結晶下端部及其近傍的方法而言， ::實現將種子結晶與所育成結晶間之界面(凸狀圓 沬之形狀’做成更為平坦的形狀而非凸狀的方 器内^免予採用加大種子結晶’並減少掛竭在加熱 m之量的方法，即可防止種子結晶與所育成結 界面(凸狀圓弧曲線)到達種子結晶下端部及 =此點’依照本實施形態之藍寶石單結晶之 可以冷卻_2。之所定外周位置(在此為 二L之广成位置)。亦即可以將該外周位置(凸 坦的形狀:置)之坩堝20内溫度分佈形成更為平 晶之製造二广狀。以實際模擬算出之藍寶石單結 曰^裝置i(坩堝2〇近偻） 表示如第5A u近傍）的溢度分佈（等溫線圖） ，5圖（濃色上方為高溫處）。 由是’如設定凸周部21开彡士 & 14内上昇7成位置在圓筒加熱器 升之坩堝20溫度達到鉉眘 領域（軸方向）最下位置，亦 士日點溫度以上之 種子、，，〇日日炫融位置（轴 201132809 方向）與凸周部21形成位置（軸方向）略為一致，即可 使種子結晶與所育成結晶間之界面（凸狀圓弧曲線） 形狀’成為更為平坦形狀，而非凸狀。 s由是，於種子結晶熔融過程中，可防止外周部熔 =進入該種子結晶下端部，致使該種子結晶傾斜，其 結果，可防止在結晶之下端部而且又是周緣部位置產 生白色化部分，亦即與種子結晶方位不同之結晶。最 後，亦可防止以結晶下端部而且是周緣部位置所生白 色化部分為基盤，在周緣部向上方成長之小傾角境 界。同時又可防止發生起因於種子結晶傾斜的龜裂。 做為一例者，茲將藉藍寶石單結晶之製造裝置工 所製造之藍寶石單結晶的照片（χ光形貌照片）表示於 第4(a)圖及第4(b)圖。由此照片可明瞭，與第8(岣 圖及第8(b)圖之照片所示藍寶石單結晶相較，小傾角 境界的發生，已被顯著的抑制。 如以上的說明，依照所揭示藍寶石單結晶之製造 裝置之應用，可防止起因於結晶方位之偏差所發生之 結晶缺陷（小傾角境界、龜裂等），W寻以製造高品質 之藍寶石單結晶。 又，本發明並不限定於以上所說明之實施例，但 在不脫離本發明之範圍下可做種種變更，自不待言。 尤其上揭文中係以垂直布力茲曼法做了說明，但亦可 利用與垂直布力茲曼法相同之單方向凝固法的垂直 溫度傾斜凝固法（VGF法），進行結晶化、退火處理而 201132809 製得藍寶石單处曰。士 早、，、°曰此％合下，係使坩堝在圓筒加熱 :昇，並置於圓筒加熱器的均熱區内進行退火處 理0 又、’、σ晶的成長軸在上揭實施形態中係採C轴， 土奮_ a轴為成長軸，又可以與r面垂直的方向做 為成長轴。 本製造裝置適合於藍寶石單結晶的製造，當 ㈣M —其他單結晶之製造。 201132809 【圖式簡單說明】 第1圖為本發明之實施形態中表示藍寶石單結 晶之製造裝置一例之概略圖（正面斷面圖）。 第2(a)及2(b)圖為表示第1圖之藍寶石單結晶之 製造裝置中坩堝一例之概略圖。 第3(a)及3(b)圖為表示第1圖之藍寶石單結晶之 製造裝置中支持部材一例之概略圖。 第4(a)及4(b)圖為藉第1圖所示藍寶石單結晶之 製造裝置所製造藍寶石單結晶的χ光形貌照片。 第5圖為表示在第1圖之藍寶石單結晶之製造 裝置中坩堝部分溫度分佈的等溫線圖。 第6圖為本發明試作與檢討的藍寶石單結晶之 製造裝置構造的概略圖（正面斷面圖）。 第7(a)〜7(f)圖為說明藉布力茲曼法的藍寶石單 結晶之製造過程的說明圖。 第8(a)及8(b)圖為藉第6圖之藍寶石單結晶之製 造裝置所製造藍寶石單結晶的χ光形貌照片。 第9圖為表示第6圖之藍寶石單結晶之製造裝 置的坩堝部分溫度分佈之等溫線圖。 201132809 【主要元件符號說明】 1 :藍寶石單結晶之製造裝置 3 :支持部材 4 ·驅動轴 5 :冷卻轴 10:育成爐 12 :筒狀被套 13 :底座 14 :圓筒加熱器 16 :斷熱部材 W :熱區 20 :坩堝 21 :凸周部 51 :循環管路 2Qa ' 21a :下面 3a :上端面 101 :藍寶石單結 晶之製造裝置 1 〇4 .驅動輛 110 :育成爐 112 z筒狀被套 113 :基座 :圓筒加熱器 118 :熱區 116 :斷熱部材 120 :坩堝 124 .種子結晶 128 :均熱區 126 :原料 A :藍寶石單結晶 中小傾角境界的結晶續 B :藍寶石單結晶 中與種子結晶方位不同201132809 VI. Description of the Invention: [Technical Field of the Invention] The present invention relates to a device for manufacturing sapphire single crystal, and more particularly to a device for manufacturing a single tera-amp; Single crystal of sapphire to solidification method [Prior Art] Sapphire can be used in various applications, and it is becoming more and more important as a user of a sapphire substrate for LED manufacturing. That is, an epitaxial layer of a buffer layer and a potassium nitride-based film is grown on a sapphire substrate to obtain an LED light-emitting substrate, which has become a mainstream. For this reason, it is desirable to have a manufacturing apparatus capable of stably producing sapphire single crystals with good efficiency. Most sapphire substrates for LED manufacturing are e-plane orientation (0001) substrates. The sapphire single crystal method of the industry (4) has the edge-limited growth (EFG) method, the Cairo porous (κρ) method, the Clarence-based (CZ) method, etc., but if it is desired to obtain crystals having a diameter of 3 吋 or more. As a result, various defects in crystallization occur, and thus a single crystal which grows in the a-axis direction is replaced. In order to grow the sapphire crystal from the a-axis into a C-axis sapphire crystal pit, it is necessary to dig crystals from the lateral direction, which is difficult to process, and there are too many unusable parts, resulting in a problem of poor production yield. Among the methods for producing an oxide single crystal, there is a so-called vertical Brazemann method (vertical temperature tilt solidification method). This vertical Britz 201132809 Manfa' uses a thinner crucible in order to easily take out the single crystals it produces. In order to obtain a single crystal from a melt having a high melting point such as sapphire, it is necessary to maintain the strength and chemical properties at a high temperature, and the prior art has disclosed information on such a flaw (see Patent Document 1). . [Patent Document 1] JP-A-2007-119297 SUMMARY OF THE INVENTION In particular, in order to obtain a single crystal of sapphire having no crystal defects by a single crystal production apparatus of a vertical Bützmann method, it is important to prevent seeds. The inclination of the crystal axis (c-axis) does not cause variation in crystal orientation when the seed crystal is melted and recrystallized. Here, the applicant of the present invention exemplifies the manufacturing apparatus 101 of the sapphire single crystal after trial and review (refer to FIG. 6), and on the other hand, the manufacturing process of the vertical Brazemann sapphire single crystal of the solidification method (refer to 7(a) to ^(f) are explained. The sapphire single crystal manufacturing apparatus 101 includes a cylindrical jacket 112 for circulating cooling water, and a hot zone in which a cylindrical heater 114 and a heat-dissipating member 116 are disposed in a space sealed by the susceptor 113. The breeding furnace of 118 is 11 〇. Further, the crucible 120 accommodating the seed crystal 124 and the material 126 is configured to be moved up and down by the drive shaft 1〇4. In the manufacturing process of sapphire single crystal, sapphire seed is first added. 201132809 Crystal 124 and raw material 126 are in 坩埚120 (Fig. 7(a)). The hot zone surrounded by the cylindrical heater 114 of the growing furnace 110 is controlled to have a temperature across the melting point of the sapphire, the upper side of which is above the temperature of the bright point and the lower side of the temperature below the melting point temperature (the seventh ( f) Figure). In addition, the sapphire seed crystal 124 and the material ι26 are suspended, and the hot zone is lifted from the lower portion to the upper side, so that the raw material 126 is melted and stops rising when the upper portion of the seed crystal 124 is dazzled (the seventh drawing). Next, it slowly decreases at the required speed (Fig. 7(c)). Then, along the crystal plane of the seed crystal 124, there is a molten solid crystal 7 (0, (4)). ^ The seed crystal 124 is disposed in the crucible 120, The c surface is horizontal, and the melt grows along the c-plane, that is, the c-axis direction. After crystallization, it is preferable to carry out an annealing treatment in the same growth furnace 11 。. More specifically, the heating of the cylinder is reduced. The temperature of the device 114 is lowered to the desired temperature (for example, 1800 〇, while the temperature of the 坩埚120 is raised to raise the temperature (see Figure 7(e)) to the middle of the rut cylinder heater 114. The temperature gradient of other parts of the part is small: sentence ... area 128 (s qingshen 7 (f) figure), and make it take the required time (for example, 1 hour) in this soaking zone, keep this state in the heap disaster 12 It is known that the sapphire single crystal is annealed, but if the residual stress is higher than that of J, It is not necessary to anneal. When 2 1 is used as the material for the formation of 坩埚120, tungsten is used in particular, during the crystallization process, the annealing process and the cooling process described later, -fg- *1 Ο is the same as the inner wall surface The surface of the sapphire single crystal is 6 201132809 $ non-contact state. It is because sapphire is not subject to external stress and can prevent sapphire from cracking. Because there is no stress between the inner wall of 120 when crystallization is taken out, the crystallization is not taken out. At the same time, 坩埚120 is not deformed and can be used repeatedly. Also, after crystallization, in the same cultivating furnace u. The inner diameter is annealed, so that the anneal ==: annealing treatment can remove the internal thermal stress of the crystallization. A high-quality sapphire single crystal with less crystal defects is obtained. The sapphire single crystal photograph (X-ray topography) of k made by the manufacturer of sapphire single crystal is as follows: 8(4) = (:)Γ In addition, the picture in Fig. 8(4) is a picture of the LCD picture of the plaque. It is clear from this picture that if the device 101 is manufactured, it is possible to make a lesser borrowing: the crystal defects of the single crystal of sapphire produced are compared, however, Figure and the first noun): Two: 傍, it can be seen that there is a slightly white two-color knife, which is called the crystal realm of the small dip angle\,:: like a crystal in a different orientation from the center. Growing up; 2:: The small dip angle is equivalent to the so-called crystal defect. If you want to get a single crystal of sapphire 1: it should belong to the potential. Therefore, it must be prevented from happening. In the use of sapphire single crystal manufacturing table 13⁄4 sapphire single sputum vomiting / ΑΛ J. Early, □ mouth day, engaged in pursuing a small dip realm occurred 201132809 = cause, completed the investigation results, and finally developed to prevent the image A device for manufacturing sapphire single crystals with crystal defects like small angles. In view of the above circumstances, an object of the present invention is to provide a device for producing a single crystal of sapphire which is capable of preventing the occurrence of crystal defects due to crystallization. 1 左 Left [Means for Solving Problems] In the embodiment of the present invention, the solution disclosed in the following is to solve the above problems. The apparatus for manufacturing sapphire single crystal disclosed in the present invention is a cylindrical heater which accommodates seed crystals and raw materials in a support which is supported by a support member, and is arranged in a cylindrical heater in a breeding furnace. In the apparatus for manufacturing such a sapphire single crystal, the apparatus for heating and transferring the sapphire single crystal is provided with an annular shape to cool the outer peripheral position of the cup (four). The disclosed sapphire single crystal manufacturing apparatus can prevent crystal defects caused by crystal orientation deviation. [Embodiment] Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. Fig. 1 is a front sectional view (schematic diagram) of a manufacturing apparatus for sapphire single crystal. The sapphire single crystal manufacturing apparatus 1 of the present embodiment is provided with a well-known breeding furnace 10 for producing a sapphire single crystal by a vertical Brazemann method. The structure is simply described as follows: The cultivating furnace 201132809 is composed of one or a plurality of cylindrical heaters extending vertically from the space in which the tubular ferrule 12 for circulating cooling water and the base 13 are sealed. In the form of this embodiment, a cylinder applicator 14 is used. In addition, the size of the growing furnace is of course different depending on the number of sheets produced, and the day/day = small, and one of them is about 55m in diameter and about lm in height. In the cultivating furnace 10, there are two openings (not shown), and an inert gas is supplied, and it is preferable to supply argon gas. When the crystallization is formed, the aging furnace 10 is filled with an inert gas. In addition, a thermometer (not shown) is provided in the plurality of rooms to measure the temperature in the furnace. In the present embodiment, the cylindrical heater 14 is formed of a carbon heater, and the temperature is adjusted by controlling the energization by a control unit (not shown). A heat-dissipating member 16 is disposed around the cylindrical heater 14, and is surrounded by the heat-dissipating material 16 to form a hot zone 18. By controlling the amount of energization of the cylinder heater ,, the temperature tilt in the up and down direction in the hot zone 18 can be formed. As an example, the heat-dissipating member 16 is made of carbon felt. Since the carbon felt can be utilized, the problem of the previously used heat-dissipating material, such as ceramics and cerium oxide, is cracked at a high temperature. Reference numeral 20 in the figure denotes a cup-shaped crucible, and the support member 3 fixed to the tip end of the =-moving shaft 4 is supported by the lower side of the drive shaft 4 so as to be movable up and down in the cylinder heater 14. Further, the drive shaft 4 is swung around the axis, and the heater 14 is rotated. On the other hand, the drive shaft 4 is connected to a cooling shaft 5, which will be described later, 201132809, and is moved up and down by a spherical screw (not shown). The 坩埚2〇 is finely controlled to move up and down and move up and down. Further, the growth furnace 10 and the heat-dissipating member 16 at the bottom and the like are provided with a structure (through hole or the like) for inserting the drive shaft 4. According to the above configuration, the seed crystal and the raw material are accommodated in the crucible 20, and the crucible 20 is placed in the cylindrical heater 14 in the crucible furnace 1 and heated by the cylindrical heater 14 to melt the raw material 6 and a part of the seed crystal. The temperature at which the upper and lower heights are formed is inclined in the cylindrical heater 14, and the molten metal in the crucible is sequentially crystallized by the vertical movement of the drive shaft 4, whereby the sapphire single crystal can be produced. Further, the process of producing the blue f stone single crystal by the vertical Britzmann method using the apparatus 1' for sapphire single crystal of the present embodiment is substantially the same as the process described in the above-mentioned 7(4) to 7 (b) circle. Therefore, the description is omitted. Then, as a characteristic component of the manufacturing apparatus i of the sapphire single crystal, the smashing 20 is made of a thermally conductive material, and has a convex peripheral portion 21 which radially protrudes at a position on the outer peripheral surface. The convex portion 21' of the second age is formed in a ring shape along the outer peripheral surface of the (four) 20 as shown in the front sectional view of the second (4) diagram and the bottom surface view of the second (b) drawing, and the cross section is formed into two sides of the table shape. The shape is not limited to the shape of the table, but it can also be broken. However, it is preferable to have one side of the support member 3 which will be described later: (in the present embodiment, the following &). In addition, as the material for forming the material of the hang worm 20, it is best to choose the material of 201132809, which can not occur at all because the coefficient of linear expansion of 坩埚2〇 is perpendicular to the growth axis of the sapphire single crystal produced. The mutual stress caused by the difference in the coefficient of linear expansion is in the single crystal of sapphire. Or its linear expansion coefficient can avoid crystal defects caused by mutual stress caused by blue crystals, and the accidents are also caused by mutual stress. Or it is better to choose a material as the material of 坩埚2〇: bucket, the average linear expansion between the sapphire melting point and the normal temperature point J is the sapphire melting point and normal temperature in the vertical direction of the sapphire single crystal growth axis. The average linear expansion coefficient between two points. Or it is better to choose a material as the material for the formation of 坩埚2〇's average linear expansion coefficient at the melting point of sapphire (2〇5(rc) to normal temperature, often less than the average sapphire in the vertical direction of the sapphire single crystal growth axis. The coefficient of linear expansion. Those who have exposed various kinds of tantalum materials include tungsten, tungsten-molybdenum alloy, molybdenum, etc. Especially tungsten has a linear expansion coefficient smaller than sapphire at various temperatures, so if using a material made of these materials, then In the crystallization process, the annealing process, and the cooling process described later, the shrinkage rate is less than that of the sapphire. The inner wall surface of the crucible 20 is in a non-contact state with the outer surface of the sapphire single crystal, and the sapphire is not subjected to pressure, thereby preventing the sapphire turtle. On the other hand, the support member 3 is formed of a thermally conductive material, and has a support surface in which the convex peripheral portion 21 of the crucible 20 is in contact with the annular surface to support the crucible. FIG. 1 and FIG. 3(4) are plan views, 3(9) 201132809 The figure is a front sectional view. As shown in the respective drawings, in the present embodiment, the coffin 3 is formed into a cup-shaped upper end surface 3a to the convex peripheral portion 21 of the hanging field 20. The following 21a is in surface contact to form a support surface that supports 坩埚2〇. As an example, the support member 3 is formed of the same material as the crucible 20. It is preferable to use materials such as tungsten, tungsten-molybdenum alloy, and molybdenum. The apparatus for manufacturing a sapphire single crystal according to the present embodiment is characterized in that it has a cooling mechanism having an outer circumferential position defined by an annular cooling. In one embodiment, the cooling mechanism has a configuration of 冷却2〇. The convex peripheral portion 21 and the support member 3 that is in contact with the convex peripheral portion 21 in an annular shape to support the crucible 20. At this time, the lower surface 2〇a of the crucible 2 and the support member 3 are disposed with a gap therebetween ( According to the configuration, the heat transfer from the convex portion 21 to the support member 3 (the heat absorbing action of the support member 3) is generated. The outer peripheral position defined by the annular cold portion 20 is generated (this embodiment) The middle portion is the position at which the convex portion 21 is formed. Further, the heat moved from the convex portion 21 to the support member 3 is further moved by the support member 3 to the drive shaft 4. These heat transfer effects occur due to the cylinder Heater 14 enables hot zone 18 When the temperature is inclined, the temperature of the crucible 20 is relatively increased, and the temperature of the support member 3 is lower than the temperature of the crucible 20, and the temperature of the drive shaft 4 is lower than the temperature of the support member 3. Further, in the present embodiment, The sapphire single crystal manufacturing apparatus 1 has a cooling member for cooling the drive shaft 4. In the embodiment, the cooling member is a shaft member having a circulation line 5! therein, and is also a pipe flow 35 The refrigerant (example #cooling water) is used to cool the cooling shaft 5. The upper end of the cooling shaft 5 is fixed with drive pumping 4. By using the cooling shaft 5 as a cooling member, heat absorption to the drive shaft 4 is generated, and the drive shaft can be reduced. The temperature of 4 is such that the heat transfer from the support member 3 to the drive shaft 4 can be promoted, that is, the cooling of the support member 3 is promoted, and as a result, the promotion from the convex portion is promoted. To the heat transfer of the support member 3, the cooling action of the cooling mechanism is enhanced. In addition, the refrigerant temperature control in the circulation line 51 is used to obtain the effect of controlling the cooling by the valley. Further, the cold portion mechanism of the outer circumferential position defined by the annular cooling is not limited to the above-described embodiment. For example, even if 坩埚% does not have the cup shape of the convex portion 21, it is cooled in a ring shape _ 2〇 The outer = or the configuration of the peripheral portion of the bottom surface 20a may have the same effect. As a specific configuration example, there is a structure (not shown) in which the support is attached. As described above, the sapphire crystal building device according to the embodiment! It can cool the outer peripheral position of the smashing 2, thereby preventing defects such as small dip angles in the outer periphery of the crystal, and obtaining a single crystal of sapphire with a high mouth. In this regard, the following will be described in detail in 1: When the effect is revealed, the reasons for the small dip angle found in the invention of the present invention are first described. As an example, the sapphire crystallization of the sapphire sapphire sapphire 13 201132809 (see Figure 8 (4), 帛 8 (b)) The convex arc curve. This is the interface between the seed crystal and the crystal: In addition, the convex arc curve is traced to the outer circumference. Two: line: point: the knife is the end of the crystal, and the circumference is set, and a white part is found (the eighth (a) and the noisy circle). . That is, in the It B part, a crystal orientation with the seed crystal is generated. It is conceivable that the crystal of the heterogeneous crystal is used as a base, and the crystallization of the crystal is formed above it so that a small dip angle map appears. In particular, at the end of the crystallization, and again =) = whitening part (3 parts in the 8th (4th) and 8th (b)) edge = = sub-crystal is in (4) difficult (refer to Figure 7(b)) In the middle, it is immersed in the lower end of the crystal of the seed, and P is found to be the cause. At the same time, the seeds are crystallized and bred into J 3 plane (convex arc curve) to reach seed crystal 4;: sub-two = combined, immersion phenomenon has also been identified. This is due to the species. The difference will become a monthly crystal crack. It is melted during the process of seed crystal melting and enters the seedling stage. In order to prevent the outer part and the end of the breeding, it is necessary to prevent the seed crystal from crystallizing. The shape of the round fox 其 傍 傍 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此The problem that the amount of crystallization of the moon becomes smaller. On the other hand, if the temperature distribution of the sapphire single crystal manufacturing apparatus 1〇1 (坩埚120_near 傍) is in the isotherm diagram (high temperature is above the rich color)>, it is convex as shown in Fig. 9. The shape is found to be the shape of the interface between the seed crystal and the crystallization (convex arc curve). That is, to prevent the interface between the seed crystal and the crystallization (the convex circle = line) reaching the lower end of the seed crystal and its vicinity, :: to achieve the interface between the seed crystal and the crystallization (the convex round The shape 'made into a flatter shape rather than a convex square is free from the use of increased seed crystallization' and reduces the amount of heating in the amount of m, which prevents seed crystallization and the nucleation interface (convex) The circular arc curve reaches the lower end of the seed crystal and = this point 'The sapphire single crystal according to the embodiment can be cooled _2. The predetermined outer peripheral position (here, the wide position of the two L). The temperature distribution in the outer circumference position (the shape of the convexity: the setting) is 20°, and the sapphire single knot device i (坩埚2〇近偻) calculated by the actual simulation is expressed as the 5A. u near 傍) the distribution of the overflow (isotherm diagram), 5 (high temperature above the dark color). If it is set, the position of the top of the temperature is higher than the temperature of the top of the 加热器 领域 & & & & & & 圆筒 圆筒 圆筒 圆筒 圆筒 圆筒 圆筒 圆筒 圆筒 圆筒 圆筒 圆筒 圆筒 圆筒 圆筒 圆筒 圆筒 圆筒The position of the sunshade (axis 201132809 direction) and the position of the convex portion 21 (axis direction) are slightly identical, so that the interface between the seed crystal and the crystallization crystal (convex arc curve) shape becomes More flat shape, not convex. s is that, during the process of crystal melting of the seed, it is possible to prevent the outer peripheral portion from melting into the lower end portion of the seed crystal, causing the seed crystal to be inclined, and as a result, it is possible to prevent the white portion from being generated at the end portion of the crystal and the peripheral portion. , that is, crystals having different crystal orientations from the seeds. Finally, it is possible to prevent the whitened portion which is formed by the position of the lower end of the crystal and the position of the peripheral portion as the base, and the small dip angle which grows upward at the peripheral portion. At the same time, it is possible to prevent the occurrence of cracks caused by the crystallization of the seeds. As an example, a photograph of a sapphire single crystal (photograph of a calendered topography) produced by a manufacturing facility for sapphire single crystals is shown in Figs. 4(a) and 4(b). From this photograph, it can be understood that the occurrence of a small dip angle is significantly suppressed as compared with the single crystal of sapphire shown in the photographs of Figures 8 and 8(b). As explained above, according to the disclosed sapphire The application of the single crystal manufacturing apparatus can prevent crystal defects (small angle of inclination, cracks, etc.) which occur due to variations in the crystal orientation, and seek to produce high quality sapphire single crystals. Moreover, the present invention is not limited to The embodiments described above, but can be modified without departing from the scope of the invention, are not to be understood. In particular, the above description is based on the vertical Brazemann method, but can also be utilized with the vertical cloth. The vertical temperature tilt solidification method (VGF method) of the same single direction solidification method of Manfa, crystallization and annealing treatment, and the sapphire single 曰 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 2011 士 士 士 士 士 士 士 士 士The cylinder is heated: liter, and placed in the soaking zone of the cylindrical heater for annealing. 0, ', the growth axis of the σ crystal is in the upper embodiment, the C axis is taken, and the earthen _ a axis is the growth axis. Can also be r-shaped The manufacturing direction is suitable for the manufacture of sapphire single crystal, and (4) M - the manufacture of other single crystals. 201132809 [Simplified description of the drawings] Fig. 1 shows the manufacture of sapphire single crystal in the embodiment of the present invention. A schematic view (front cross-sectional view) of an example of the device. Figs. 2(a) and 2(b) are schematic diagrams showing an example of the apparatus for manufacturing a single crystal of sapphire in Fig. 1. Figs. 3(a) and 3((3) b) is a schematic view showing an example of a supporting member in the apparatus for manufacturing sapphire single crystal of Fig. 1. Figs. 4(a) and 4(b) are sapphire produced by the apparatus for manufacturing sapphire single crystal shown in Fig. 1. Photograph of the calendered topography of a single crystal. Fig. 5 is an isotherm diagram showing the temperature distribution of the crucible portion in the apparatus for manufacturing a single crystal of sapphire in Fig. 1. Fig. 6 is a single crystal of sapphire which is a trial and review of the present invention. A schematic view of the structure of the manufacturing apparatus (front cross-sectional view). Figures 7(a) to 7(f) are explanatory diagrams for explaining the manufacturing process of the sapphire single crystal by the Britzmann method. 8(a) and 8 (b) The figure shows the manufacturing device of the sapphire single crystal by the sixth figure. Photograph of the calendered topography of the sapphire single crystal. Fig. 9 is an isotherm diagram showing the temperature distribution of the 坩埚 part of the sapphire single crystal manufacturing apparatus of Fig. 6. 201132809 [Description of main component symbols] 1 : Sapphire single crystal Manufacturing apparatus 3: support member 4: drive shaft 5: cooling shaft 10: cultivating furnace 12: cylindrical quilt cover 13: base 14: cylindrical heater 16: heat-dissipating member W: hot zone 20: 坩埚 21: convex peripheral portion 51 : circulation line 2Qa ' 21a : lower 3a : upper end surface 101 : sapphire single crystal manufacturing apparatus 1 〇 4 . drive unit 110 : growing furnace 112 z cylindrical quilt cover 113 : pedestal : cylinder heater 118 : hot zone 116 : heat-breaking part 120 : 坩埚 124 . seed crystal 128 : soaking zone 126 : raw material A : crystallization of sapphire single crystal in the small dip angle boundary continued B : sapphire single crystal is different from the seed crystal orientation