201131658 六、發明說明： 【發明所屬之技術領域】 本發明係關於半導體基板熱處理裝置，特別是有關薄 型（wafer type)的半導體基板熱處理裝置。 【先前技術】 半導體製造工程之一有熱處理工程。半導體製造工程 之熱處理工程中，有必要將晶圓的溫度均一化，而作爲熱 處理裝置之方式習知有燈加熱（lamp-heating )方式、電 阻加熱方式、分區控制（zone control)感應加熱方式等 等，各加熱方式也一直被屢次進行種種改良。 就可以急速且溫度分布控制上，比燈加熱方式或電阻 加熱方式較爲優良之分區控制感應加熱方式，在進行直徑 較大的晶圓的加熱的場合下，如圖5 ( A ) 、 （ B )所示， 係採取薄型（wafer type )的加熱方式（參照專利文獻1 ) 。又，圖5之方塊圖中，圖5(A)係熱處理裝置之側面構 成、圖5(B)顯示平面構成。 具體而言，就是所謂利用一種裝置，具有被配置於同 心圓上之複數之圓形感應加熱線圈2、與配置於該圓形線 圈2上部之加熱體（石墨3)之裝置，加熱石墨3上所載置 之晶圓4之方式。以前，具有該種基本構成之熱處理裝置1 中，石墨3之尺寸，係與位於最外圍之感應加熱線圈2之直 徑大致相同，或者，被做成比位於最外圍之感應加熱線圈 2之直徑還要小的尺寸。因此’在石墨3相對於感應加熱線 201131658 圏2即使稍微偏心時，在石墨3的端部附近也會發生磁束的 不平衡’產生溫度的偏差。因此，在以前，是藉由提高感 應加熱線圈2對石墨3的載置精確度，進而採取一邊確認溫 度分布一邊反覆進行微調整之手段，以謀求均一溫度分布 的高精確度化。 〔先行技術文獻〕 〔專利文獻〕 專利文獻1:日本專利特開2008-159759號公報 【發明內容】 〔發明所欲解決之課題〕 的確，藉由反覆進行上述之類的微調整是能夠得到符 合要求精確度之溫度分布。但是，因爲微調整依賴調整者 的直覺或熟練度，所以調整時間與調整精確度之間的差別 相當大。此外，將加熱體與最外圍之線圈外形作成相同之 場合，考慮到設置加熱體但不使之偏心是比較容易，實際 上，卻會產生微小的誤差，還是必須進行微調整。再者， 雖然在熱處理裝置具備可自動執行加熱體的中心調整之機 構也是可以的，但是在該場合下則有裝置大型化或高成本 化等等之疑慮。 於是，本發明之目的，在於提供一種不必小規模的微 調整，就能夠在不需要依賴直覺或熟練度而加熱體（石墨 )可得到所期待之溫度分布的半導體基板熱處理裝置。 201131658 〔用以解決課題之手段〕 關於用以達成上述目的之本發明之半導體基板熱處理 裝置，具有被配置在同心圓上之複數之感應加熱線圈、被 接續在各個複數之前述感應加熱線圈，並控制對各感應加 熱線圈之投入電力之換流器、配置於利用複數之前述感應 加熱線圈所構成之面上之圓盤型加熱體等’然後將載置於 前述加熱體之半導體基板加熱之半導體基板熱處理裝置， 其特徵爲：前述加熱體係將其外徑作成比配置於複數之前 述感應加熱線圈之中最外圍之感應加熱線圈之外徑還要大 0 此外，具有上述特徵之半導體基板熱處理裝置，其中 ，在將被配置於前述最外圍之感應加熱線圈之磁束到達距 離設爲h、將複數之前述感應加熱線圏與前述加熱體之垂 直距離設爲d之場合下，前述加熱體的直徑D的最大値，最 好是滿足：【數學式1】之關係式。 【數學式1】BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor substrate heat treatment apparatus, and more particularly to a wafer type semiconductor substrate heat treatment apparatus. [Prior Art] One of the semiconductor manufacturing projects has a heat treatment project. In the heat treatment engineering of semiconductor manufacturing engineering, it is necessary to uniformize the temperature of the wafer, and as a heat treatment device, a lamp-heating method, a resistance heating method, a zone control induction heating method, etc. are conventionally known. Etc., each heating method has been repeatedly improved. In the case of rapid and temperature distribution control, the zone-controlled induction heating method is superior to the lamp heating method or the resistance heating method, and in the case of heating a wafer having a large diameter, as shown in Fig. 5 (A), (B) As shown in the figure, a heating method of a wafer type is adopted (refer to Patent Document 1). Further, in the block diagram of Fig. 5, Fig. 5(A) shows the side surface configuration of the heat treatment apparatus, and Fig. 5(B) shows the plane configuration. Specifically, it is a device that has a plurality of circular induction heating coils 2 disposed on concentric circles and a heating body (graphite 3) disposed on the upper portion of the circular coil 2, and heats the graphite 3 The way the wafer 4 is placed. In the heat treatment apparatus 1 having such a basic configuration, the size of the graphite 3 is substantially the same as the diameter of the induction heating coil 2 located at the outermost periphery, or is made smaller than the diameter of the induction heating coil 2 located at the outermost periphery. To be small size. Therefore, even when the graphite 3 is slightly eccentric with respect to the induction heating wire 201131658 圏2, a magnetic flux imbalance occurs in the vicinity of the end portion of the graphite 3 to cause a temperature deviation. Therefore, in the past, by adjusting the accuracy of the mounting of the graphite coil 3 by the induction heating coil 2, it is possible to repeatedly perform fine adjustment while confirming the temperature distribution, thereby achieving high precision of the uniform temperature distribution. [Provisional Technical Documents] [Patent Document] Patent Document 1: JP-A-2008-159759 (Summary of the Invention) [Problems to be Solved by the Invention] Indeed, it is possible to obtain compliance by repeating the above-described fine adjustment. The temperature distribution required for accuracy. However, because the fine adjustment relies on the adjuster's intuition or proficiency, the difference between the adjustment time and the adjustment accuracy is quite large. Further, in the case where the heating body is formed in the same shape as the outermost coil shape, it is relatively easy to set the heating body without eccentricity, and in fact, a slight error occurs, and fine adjustment is necessary. Further, although it is also possible to provide a mechanism for automatically performing center adjustment of the heating body in the heat treatment apparatus, in this case, there is a concern that the apparatus is increased in size or cost. Accordingly, it is an object of the present invention to provide a semiconductor substrate heat treatment apparatus which can obtain a desired temperature distribution by heating a body (graphite) without relying on intuition or proficiency without requiring minor adjustments. 201131658 [Means for Solving the Problem] The semiconductor substrate heat treatment apparatus of the present invention for achieving the above object has a plurality of induction heating coils arranged on a concentric circle, and is connected to each of the plurality of induction heating coils, and An inverter that controls the input of electric power to each of the induction heating coils, a disk-shaped heating body disposed on a surface of the plurality of induction heating coils, and the like, and then heats the semiconductor substrate placed on the semiconductor substrate of the heating body The substrate heat treatment apparatus is characterized in that the heating system has an outer diameter larger than an outer diameter of an induction heating coil disposed at a periphery of a plurality of the plurality of induction heating coils. Further, the semiconductor substrate heat treatment apparatus having the above characteristics In the case where the magnetic flux arrival distance of the induction heating coil disposed at the outermost periphery is h, and the vertical distance between the plurality of induction heating coils and the heating body is d, the diameter of the heating body The maximum flaw of D is best to satisfy the relationship of [Mathematical Formula 1]. [Math 1]
D的最大値=被配置於最外圍的感應加熱線圈的直徑+L (L = ^l(h2-d2)) 根據上述方式訂定加熱體之直徑D，即使在加熱體的 誤差量最大，亦即作成超出側與相反側的端部大致位於最 外圍之感應加熱線圈之正上方之場合’對於超出側之端部 之放熱量的比例變得極端地髙，造成無法均一之溫度分布 控制之情事也能夠避免。 Λ 201131658 〔發明之效果〕 如根據具有上述型態特徵之半導體基板熱處理裝置’ 在對加熱體施予均一的溫度分布時’就沒有必要進行小規 模的微調整。此外，由於微調整變得不必要，所以也消除 了依賴直覺或熟練度之情事。 【寳施方式】 以下，針對關於本發明之半導體基板熱處理裝置之實 施型態，參照圖面並詳細說明。 首先，針對關於本發明之半導體基板熱處理裝置（以 下，簡稱熱處理裝置）之實施型態，參照圖1並加以說明 。關於本實施型態之熱處理裝置1 〇，至少，具備感應加熱 線圈12 ( 12a〜12e )、作爲加熱體之石墨（graphite ) 14 、以及電力控制部18,作成在石墨14上載置半導體基板之 晶圓1 6之構成。又，以下的實施型態係如前述，試舉加熱 體以石墨1 4爲例加以說明，可以適用於本發明之加熱體當 然並不限於石墨。如果要替代石墨作爲加熱體，能夠試舉 例如Sic、塗布SiC之石墨、以及耐熱金屬等等。 前述感應加熱線圈1 2，係指圓形（C型）的線圈，就 全體來看之場合，因爲半徑（直徑）不同之複數之圓形線 圈是被配置於同心圓上，所以形成所謂的蛋糕捲（ baumkuchen)狀體。在複數配置之感應加熱線圈12，接續 著電力控制部1 8。 電力控制部1 8，例如，基本上以三相交流電源（ -8 - 201131658 three-phase alternating ) 26、整流器(converter ) 24、斷 路器（chopper) 22 ( 22a 〜22e) '以及換流器（inverter )20(20a〜20e)構成。 整流器24，係將被輸入三相交流電源2 6之三相交流電 流變換成直流後，往接續在後段之斷路器22輸出之順變換 部。 前述斷路器22，係使從整流器24輸出之電流之通流率 改變，使輸入換流器20之電流之電壓改變之電壓調整部。 前述換流器20，將利用斷路器22被電壓調整之直流電 流，變換成交流電流並往感應加熱線圈1 2供給之逆變換部 。又，本實施型態中例舉之熱處理裝置1 〇之換流器20，係 作成將感應加熱線圈12與共振電容器（condenser) 19串聯 配置之串聯共振型的換流器。此外，在複數之（本實施型 態之場合爲5個）感應加熱線圈1 2分別、個別地接續換流 器20、以及斷路器22。又，從換流器20往感應加熱線圏1 2 之輸出電流之控制，係作成根據從未圖示之驅動控制部之 輸入訊號而執行之方式。 根據上述型態之電力控制部1 8，就能利用斷路器22控 制從整流器24輸出之電流之電壓，利用換流器20變換從斷 路器22輸出之直流電流、予以調整頻率。因此，能夠利用 斷路器22控制輸出電力，利用換流器20，與被往複數之線 圈相鄰接配置之感應加熱線圈1 2投入之電流之頻率進行位 相調整。於是，藉由將輸出電流之頻率之位相同步化（指 將位相差設在〇或使之趨近於〇 )、或者保持在被訂定之間 201131658 隔，就能夠迴避被鄰接配置之感應加熱線圈12之間的相互 感應之影響。此外，藉由針對各個複數之感應加熱線圈12 控制投入電力，就能進行加熱體之石墨14 ’甚至是加熱對 象物之晶圓1 6之溫度分布控制。 此外，關於本實施型態之感應加熱線圈1 2 ’係如圖1 所示被形成中空構造，形成內部可以插通冷媒（例如水） 。利用作成這樣的構成’就能夠承受來自成爲熱源的石墨 1 4之輻射或傳熱，並防止感應加熱線圈1 2自身過熱之情形 〇 關於本實施型態之石墨1 4，係被形成平板圓板狀。此 外，關於本實施型態之石墨1 4之特徵型態’能夠例舉其外 徑，相較於上述之感應加熱線圈12之中’被配置於最外圍 之感應加熱線圈1 2 e之外徑，將前者作成比後者還要大之 點。針對石墨1 4之大小，參照圖2具體地加以說明。 圖2係模式地顯示石墨1 4與感應加熱線圈1 2之配置關 係之圖。圖2中，將感應加熱線圈1 2與石墨1 4的垂直距離 設爲d、將感應加熱線圈1 2 (最外圍的感應加熱線圈1 2 e ) 之磁束的到達距離設爲h。在此，將從最外圍的感應加熱 線圈1 2e的正上方位置、到其外周側之磁束的到達距離的 範圍之距離（超出距離）設爲L之場合下，L係能用數學式 2來表示。 【數學式2】 L = yj(h2 -d2) 在L爲超過數學式2的範圍之場合，因爲石墨14的先端 -10- 201131658 不被加熱，導致放熱量的比例增加，而成爲破壞均一的溫 度分布的原因。 此外，如圖3所示之以前的石墨般’大小與被配置於 最外圍之感應加熱線圈的外徑約略相等’相對於感應加熱 線圈而石墨的配置位置偏心之場合則會發生如下的現象。 亦即，依磁束浸透深度的影響之不同，對於狹窄的最外圍 的感應加熱線圈所形成之加熱領域（格子線的領域：特別 是圖中右側）而言磁束較爲集中，產生局部地方過度加熱 之情形。因此，就石墨全體而言加熱的平衡崩壞’爲均一 的溫度分布控制帶來不良的影響。 依照這樣的實際狀況，石墨1 4係如圖4所示方式’即 使例如在相對於感應加熱線圈1 2被偏心配置之場合，也有 必要使其端部不位於被配置於最外圍之感應加熱線圈1 之正上方位置之內側。於是，斟酌該等條件之後，石墨1 4 的直徑D的最大値成爲 【數學式3】The maximum 値 of D = the diameter of the induction heating coil disposed at the outermost circumference + L (L = ^l (h2-d2)) The diameter D of the heating body is set according to the above method, even if the amount of error of the heating body is the largest, In the case where the end portions on the opposite side and the opposite side are located substantially directly above the outermost induction heating coil, the ratio of the amount of heat released to the end portion of the excess side becomes extremely ambiguous, resulting in a situation in which uniform temperature distribution control is impossible. Can also be avoided. Λ 201131658 [Effects of the Invention] According to the semiconductor substrate heat treatment apparatus having the above-described characteristics, when a uniform temperature distribution is applied to the heating body, it is not necessary to perform fine adjustment of the small mold. In addition, since micro-adjustment becomes unnecessary, it also eliminates the need to rely on intuition or proficiency. [Bao Shi Mode] Hereinafter, the embodiment of the heat treatment apparatus for a semiconductor substrate according to the present invention will be described in detail with reference to the drawings. First, an embodiment of a semiconductor substrate heat treatment apparatus (hereinafter, simply referred to as a heat treatment apparatus) according to the present invention will be described with reference to Fig. 1 . In the heat treatment apparatus 1 of the present embodiment, at least the induction heating coils 12 (12a to 12e), the graphite 14 as a heating body, and the electric power control unit 18 are provided to form a crystal on which the semiconductor substrate is placed on the graphite 14. The composition of the circle 16. Further, the following embodiment is as described above, and the test heating body is described by taking graphite 14 as an example, and the heating body which can be applied to the present invention is of course not limited to graphite. If graphite is to be used as a heating body, for example, Sic, graphite coated with SiC, and heat resistant metal can be tried. The induction heating coil 12 refers to a circular (C-type) coil. When viewed from the whole, a plurality of circular coils having different radii (diameters) are arranged on concentric circles, so that a so-called cake is formed. Volume (baumkuchen) shape. The plurality of induction heating coils 12 are connected to the power control unit 18. The power control unit 18 is, for example, basically a three-phase AC power supply (-8 - 201131658 three-phase alternating) 26, a rectifier 24, a circuit breaker 22 (22a to 22e)', and an inverter ( Inverter 20 (20a~20e). The rectifier 24 converts the three-phase AC current input to the three-phase AC power source 26 into DC, and then goes to the forward conversion portion of the circuit breaker 22 outputted in the subsequent stage. The circuit breaker 22 is a voltage adjustment unit that changes the current flow rate of the current output from the rectifier 24 and changes the voltage of the current input to the inverter 20. The inverter 20 converts the DC current whose voltage is adjusted by the circuit breaker 22 into an alternating current and supplies it to the inverse conversion unit of the induction heating coil 12. Further, the inverter 20 of the heat treatment apparatus 1 exemplified in the present embodiment is a series resonance type inverter in which the induction heating coil 12 and the resonance capacitor 19 are arranged in series. Further, in the plurality of (in the case of the present embodiment, five) induction heating coils 1 2, the inverter 20 and the circuit breaker 22 are individually connected. Further, the control of the output current from the inverter 20 to the induction heating coil 圏1 is performed in accordance with an input signal from a drive control unit (not shown). According to the above-described type of power control unit 18, the voltage of the current output from the rectifier 24 can be controlled by the circuit breaker 22, and the DC current output from the circuit breaker 22 can be converted by the inverter 20 to adjust the frequency. Therefore, the output power can be controlled by the circuit breaker 22, and the frequency of the current supplied from the induction heating coil 12 disposed adjacent to the reciprocating coil can be phase-adjusted by the inverter 20. Thus, by synchronizing the phase of the frequency of the output current (meaning that the phase difference is set to 〇 or close to 〇), or to remain between the set 201131658, the adjacent induction heating coil can be avoided. The effect of mutual induction between 12. Further, by controlling the input electric power for each of the plurality of induction heating coils 12, the temperature distribution control of the graphite 14' of the heating body or even the wafer 16 for heating the object can be performed. Further, the induction heating coil 1 2 ' of the present embodiment is formed into a hollow structure as shown in Fig. 1, and a refrigerant (for example, water) can be inserted into the inside. By using such a configuration, it is possible to withstand the radiation or heat transfer from the graphite 14 which is a heat source, and prevent the induction heating coil 12 from overheating itself. The graphite 1 4 of the present embodiment is formed into a flat circular plate. shape. Further, the characteristic pattern 'of the graphite type 14 of the present embodiment' can be exemplified by the outer diameter thereof, which is smaller than the outer diameter of the induction heating coil 1 2 e disposed at the outermost periphery of the induction heating coil 12 described above. Make the former a bigger point than the latter. The size of the graphite 14 will be specifically described with reference to Fig. 2 . Fig. 2 is a view schematically showing the arrangement relationship between the graphite 14 and the induction heating coil 12. In Fig. 2, the vertical distance between the induction heating coil 12 and the graphite 14 is set to d, and the distance of arrival of the magnetic flux of the induction heating coil 12 (the outermost induction heating coil 1 2 e ) is h. Here, when the distance (out of distance) from the position immediately above the outermost induction heating coil 1 2e to the range of the arrival distance of the magnetic flux on the outer peripheral side is L, the L system can be expressed by the mathematical formula 2 Said. [Math 2] L = yj(h2 -d2) When L is outside the range of Mathematical Formula 2, since the tip of the graphite 14-10-201131658 is not heated, the proportion of heat release increases, and the damage is uniform. The reason for the temperature distribution. Further, as in the case where the former graphite-like size shown in Fig. 3 is approximately equal to the outer diameter of the induction heating coil disposed at the outermost periphery, the following phenomenon occurs when the arrangement position of graphite is eccentric with respect to the induction heating coil. That is, depending on the influence of the depth of magnetic flux soaking, the magnetic field is concentrated on the heating field formed by the narrowest outermost induction heating coil (the field of the lattice line: especially the right side in the figure), and localized local heating is generated. The situation. Therefore, the equilibrium collapse of heating in the entirety of the graphite has a bad influence on uniform temperature distribution control. According to such an actual situation, the graphite 14 is in a manner as shown in FIG. 4, and even if it is eccentrically disposed with respect to the induction heating coil 12, for example, it is necessary that the end portion is not located at the outermost induction heating coil. The inside of the position directly above 1 . Therefore, after considering these conditions, the maximum 値 of the diameter D of the graphite 14 becomes [Math 3]
D = D 〇 + L D〇爲位於最外圍之感應加熱線圈的直徑（外徑） 而石墨的直徑D的範圍則成爲 【數學式4】D = D 〇 + L D〇 is the diameter (outer diameter) of the induction heating coil located at the outermost periphery, and the range of the diameter D of the graphite becomes [Math 4]
D〇^ D〇 + L 根據在該種方式的範圍下訂定石墨1 4的直徑D，即使 相對於感應加熱線圈1 2之中心位置而言石墨1 4的中心位置 偏心之場合，局部的過度加熱、或放熱比例的增加所導致 -11 - 201131658 之加熱平衡的崩壞，以及伴隨該等狀況之對 控制之影響也會消失，而可以進行高精確度 的熱處理。石墨1 4之中，超出感應加熱線圈 因爲所到達之磁束變少而容易變涼，但是因 發生實質的溫度降低則幾乎沒有。因此，對 部分，亦即石墨1 4之中之感應加熱線圈1 2正 言，不易受到溫度變化的影響。因而，藉由 之構成，可以執行均一溫度分布控制。 又，就對石墨1 4之晶圓1 6的載置型態而 被均一加熱，當然地，透過石墨1 4被間接加 會被均一加熱。因此，晶圓1 6，如果被配置 14表面之方式，在石墨14與晶圓16、或感應 晶圓1 6之間即使作成具有偏心，也不會對加 響。但是，最佳條件是，晶圓1 6的中心位置 應加熱線圏1 2之中心位置。 根據上述型態構成之熱處理裝置10，即 線圈12而言石墨14的配置型態爲偏心之場合 附近之磁束也不易發生不平衡，而可以形成 布控制。藉此，就能夠省去進行微調整石墨 時。亦即，變成不需要倚賴調整者的直覺或 作中心調整之特別的機構之調整精確度。 【圖式簡單說明】 圖1係關於實施型態之感應加熱裝置之2 均一溫度分布 的半導體基板 1 2之部分，會 爲發熱自體所 於實質的加熱 上方的部分而 形成上述型態 言，如石墨1 4 熱之晶圓1 6也 成收納於石墨 加熱線圈1 2與 熱體系造成影 最好重合在感 使對感應加熱 ，石墨14端部 均一之溫度分 1 4的配置的工 經驗，或者用 塊圖。 -12- 201131658 圖2係用以決定石墨（graphite )之尺寸之原理之說明 圖。 圖3係圖示從前之石墨的誤差與加熱範圍。 圖4係圖示關於實施型態之石墨的誤差與加熱範圍。 圖5係圖示從前之薄型感應加熱裝置之構成。 【主要元件符號說明】 10:熱處理裝置（半導體基板熱處理裝置） 1 2 ( 1 2 a〜1 2 e ):感應加熱線圈 14:石墨（graphite) 16:晶圓（wafer) 1 8 :電力控制部 20 ( 20a~ 20e):換流器（inverter) 22 ( 22a 〜22e):斷路器（chopper) 24:整流器（converter) 2 6 :三相交流電源 -13-D〇^ D〇+ L According to the diameter D of the graphite 14 in the range of the mode, even if the center position of the graphite 14 is eccentric with respect to the center position of the induction heating coil 12, partial excessive The increase in heating or the proportion of heat release causes the collapse of the heating balance of -11 - 201131658, and the influence on the control accompanying such conditions also disappears, and high-precision heat treatment can be performed. Among the graphites 1 4, the induction heating coil is more likely to be cooled because the magnetic flux is less, but there is almost no substantial temperature drop. Therefore, the opposite portion, i.e., the induction heating coil 12 in the graphite 14, is not susceptible to temperature changes. Thus, by this configuration, uniform temperature distribution control can be performed. Further, the wafer 14 of the graphite 14 is uniformly heated by the mounting pattern, and of course, the graphite 14 is indirectly heated and uniformly heated. Therefore, the wafers 16 are not erected even if they are eccentric between the graphite 14 and the wafer 16 or the inductive wafer 16 if the surface of the wafer 14 is disposed. However, the optimum condition is that the center position of the wafer 16 should be heated to the center of the line 圏1. According to the heat treatment apparatus 10 of the above-described configuration, that is, the arrangement of the graphite 14 in the coil 12 is eccentric, the magnetic flux in the vicinity is less likely to be unbalanced, and the cloth control can be formed. Thereby, it is possible to omit the time when the fine adjustment of the graphite is performed. That is, it becomes the adjustment precision of a special institution that does not need to rely on the adjuster's intuition or center adjustment. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a portion of a semiconductor substrate 12 in which a uniform temperature distribution of an induction heating device of the embodiment is formed, and the above-mentioned type is formed by heating a portion above the substantial heating body. For example, the graphite 1 4 hot wafer 16 is also stored in the graphite heating coil 1 2 and the thermal system is best to overlap the shadow in the sense of induction heating, the uniform temperature of the end of the graphite 14 is divided into 14 parts of the work experience, Or use a block diagram. -12- 201131658 Figure 2 is an explanatory diagram of the principle used to determine the size of graphite. Figure 3 is a graph showing the error and heating range of the prior graphite. Figure 4 is a graph illustrating the error and heating range for the graphite of the embodiment. Fig. 5 is a view showing the configuration of a conventional thin induction heating device. [Description of main component symbols] 10: Heat treatment device (semiconductor substrate heat treatment device) 1 2 (1 2 a~1 2 e ): Induction heating coil 14: Graphite 16: Wafer 1 8 : Power control unit 20 ( 20a~ 20e): Inverter 22 ( 22a ~ 22e): Circuit breaker (chopper) 24: Rectifier (converter) 2 6 : Three-phase AC power supply - 13-