TW201124221A - Method and device for wire bonding - Google Patents

Method and device for wire bonding Download PDF

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Publication number
TW201124221A
TW201124221A TW99134263A TW99134263A TW201124221A TW 201124221 A TW201124221 A TW 201124221A TW 99134263 A TW99134263 A TW 99134263A TW 99134263 A TW99134263 A TW 99134263A TW 201124221 A TW201124221 A TW 201124221A
Authority
TW
Taiwan
Prior art keywords
gas
process gas
generator
bonding
joint
Prior art date
Application number
TW99134263A
Other languages
Chinese (zh)
Inventor
Christoph Laumen
Pang Ling Hiew
Original Assignee
Linde Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Linde Ag filed Critical Linde Ag
Publication of TW201124221A publication Critical patent/TW201124221A/en

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/002—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating specially adapted for particular articles or work
    • B23K20/004—Wire welding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67138—Apparatus for wiring semiconductor or solid state device
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/42—Printed circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/4501—Shape
    • H01L2224/45012—Cross-sectional shape
    • H01L2224/45015—Cross-sectional shape being circular
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
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    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/781—Means for controlling the bonding environment, e.g. valves, vacuum pumps
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85053—Bonding environment
    • H01L2224/85054—Composition of the atmosphere
    • H01L2224/85065—Composition of the atmosphere being reducing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85053—Bonding environment
    • H01L2224/85054—Composition of the atmosphere
    • H01L2224/85075—Composition of the atmosphere being inert
    • H—ELECTRICITY
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    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
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    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
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    • H01L2924/01018—Argon [Ar]
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    • H01L2924/01079—Gold [Au]

Abstract

The present invention relates to a device for wire bonding comprising a guidance for a bond wire and a melt inducing device for melting the surface of a definite region of the bond wire surface, whereby the bond wire guidance is adapted to guide the definite region of the bond wire into a bonding area (1) and connect it to at least one bond pad, whereby the bonding area (1) comprises a process gas inlet (3), characterized in that the process gas inlet (3) is connected to an on-site gas generator (5) which generates the process gas. In addition, the present invention relates to a method for wire bonding comprising the steps of: connecting a definite region of a guided bond wire to a bond pad, whereby the surface of the definite region is previously melted and the whole process takes place within a bonding area (1), which contains a process gas, which is led into the bonding area prior or during the bonding process, characterized in that at least a part of the process gas is generated by an on-site gas generator (5).

Description

201124221 六、發明說明： 【發明所屬之技術領域】 本發明係關於一種用於打線接合之裝置，其包含用於接 〇線之導槽及用於熔融接合線表面之指定區域之表面之熔 融誘發裝置，藉此調整該接合線以將接合線之指定區域引 導至接合區域中並將其連接至至少一接合塾片，其中該接 。區域包含-加工氣體入口。此外，本發明係關於一種用 於打線接合之方法，其包含步驟：將接合線之指定區域連 接至接合墊片’藉此預熔融指定區域之表面及於含有於接 σ加工之刖或期間導入接合區域中之加工氣體之接合區域 中實施整個加工。 【先前技術】 打線接合係-種於電子工業中用於連接電子零件，尤』 微電子零件之已知製造方法。亦可藉由此方法連接微米 非電子零件。所使用之線通常具有極小直徑且稱為接洽 線。打線接合係用於以此線連接兩或更多個零件。各零科 具有-般稱為接合塾片之至少—接觸位點。該等零㈣ 例如微電路之金屬或金屬化零件，或任何晶片模組或其他 電子零件。 果。證 氫氣與 。亦已 —眾所周知加工氣體可用於改良打線接合方法之結 實數種氣體及氣體混合物特财用，例如，氮氣、 說氣及/或氬氣、氦氣之混合物或其他。 ?尤打、，泉接口方法所已知，通常使用金線或金合線 知使用鋁或銅線。 150262.doc 201124221 當使用銅線或含銅或銅合金線時，已知會遭遇黏附性氧 化物之難題。已知銅至少會被輕微氧化。含氧化銅之線之 導電性、接合難易及連接強度會因含銅線表面上存在氧化 物而降低。含銅或銅合金線之所有上述可能性於下文中稱 為含銅線且應涵蓋純銅線及含有至少10%純鋼之含銅線。 文獻US 6,234,3 76揭示一種利用加工氣體以減少氧化物 形成及藉此改良改良銅或鋁接合線之利用率之方法及裝 置。 、 【發明内容】 本發明之目的係改良加工氣體之供應。 此目的係藉由提供一種用於打線接合之裝置實現，該裝 置包含用於接合線之導槽及用於熔融接合線表面之指=區 域表面之熔融誘發裝置，藉此接合線導槽適於引導接合線 之指定區域至接合區域中並將其連接至至少一接合墊片， 其中該接合區域包含加X氣體人口且其特徵在於該加工氣 體入口係連接至產生加工氣體之現場氣體發生器。 於下文中用於打線接合之裝置亦稱為打線接合機。 術語「加工氣體」應，特定言之，意指惰性氣體，如氮 氣、氬氣或氦氣，及可與接合線及/或接合墊片表面反應 之活性氣體，如氫氣。 術語「接合區域」應意指實施接合加工之區域。特定言 之，將接合區域設計成密封接合室。然而，接合區域亦可 為部份或完全向周圍敞開之容室。 根據本發明現場產生至少—部份加卫氣體，該現場靠近 150262.doc 201124221 使用位點。此方案之優勢在於可省去儲氣罐。例如，現場 氮氣發生器可於接合區域内提供惰性氛圍，例如，包含 PSA(.變壓吸附)或隔膜之氮氣發生單元。根據另一實例， 可使用氫氣發生器’例如，電解、氨裂化或碳水化合物再 形成類發生器。可將所產生之氫氣單獨用作m線接合 裝置之加工氣體或可與其他氣體混合。 打線接合機係相對小的機器且因此接合區域之體積亦相 對小。於標準溫度及氣卿τρ)下，於接合加工期間所需 求之氣體量-般係於數⑽/小時（i/h)之範圍^因此，根 據較佳實心列，該現場發生器係經設計以力標準條件 (πρ)下製造少於_ 1/h加工氣體，較佳少於_ i/h加工 氣體’更佳少於200 l/h加工氣體。 根據本發明之一貫施例，藉由第一管將該氣體發生器連 ,至入口。較佳該氣體發生器係用於製造惰性氣體，尤其 是氮氣，及/或活性加工氣體例如可於電漿中激發之加工 氣體，尤其氫氣。 根據本發明之一較佳實施例，將第二管連接至第一管或 通向接合區域之另-人口或儲氣罐。因此，該第二管將儲 氣罐與打線接合裝置連接◊可使用儲氣罐對打線接合機， 尤其對接合(I域供應惰性氣體。儲氣罐亦可用於儲存與接 合線、接合墊片、存在於接合線或接合墊片表面上或周圍 之物質、顆粒或氣體反應之加工氣體。此實施例甚為有 利，係因可將由儲氣罐供應之加工氣體混合物，例如，氮 氣’與由現場氣體發生器產生之氫氣組合。可對此氣氣發 150262.doc 201124221 生器供應水、NH3及/或碳水化合物。 較佳地以氮氣及氫氣供應打線接合機，其中此等氣體中 之至：>' 者係由現場產生。例如’使用含有3%至1 〇〇%氫 氣之氮氣與氫氣之混合物，較佳使用含有3%至2〇%氫氣， 更佳5°/。至1 〇%氫氣之氮氣與氫氣之混合物。 根據本發明之另一實施例’於接合區域之加工氣體入口 上游之連接點處將第一管連接至第二管。因此，較佳僅需 一入口來將一或多種加工氣體導入接合區域中。 根據本發明之另-實施例，將混合器置於連接點處。使 用此混合器可提供加工氣體混合物之預定百分比之各組 分。例如’氮氣與氫氣之氣體混合物中之氫氣百分比決定 加工氣體混合物之還原作用及因此係較佳之預定目標。例 如，可使用混合器以將所產生之急名伽ώ匕尸 所座生之虱軋與自氮氣儲氣罐供應 之氮氣混合。 只把例，將除氧淨化器連接至位於接 口上游之第一及/或第二管，以控制 根據本發明之另一 合區域之加工氣體入 可使用 加工氣體及/或加工氣體之組分之氧含量。例如 催化除氧淨化器。 根據本發明之另一實施例，提 发 代〜、弟一軋體發生器。此第 二氣體發生器係，例如，氮氣於 咕_ _ 虱轧1生态。根據此實施例，該 第一氣體發生器可省去任何儲氣罐 ,„ , „ ^ 巩罐例如，兩現場氣體發 生窃（一虱氣發生器及一氮氣私& 乱軋I生态）之組合極其有利。然 而，若於打線接合機中需求多 夕於兩種加工氣體，則亦可使 用兩現場氣體發生器及—或多個赌氣罐。 150262.doc 201124221 本發明之目的亦藉由一種打線接合方法實現，該方法包 含步驟：藉由現場氣體發生器產生至少一部份加工氣體。 根據另一實施例’將加工氣體與由儲氣罐供應或由第二 現場氣體發生器產生之第二氣體混合並隨後導入接合區域 中。 根據另一實施例’於通向接合區域之入口上游某處使用 除氧淨化器’以移除加工氣體或加工氣體之組分中之至少 一部份氧含量。 根據本發明之另一實施例，氣體發生器可用於對多個接 S裝置供應加工氣體。打線接合機之一般加工氣體消耗係 於20至100 1/h(STP)範圍内。因此，若現場發生器僅供應 打線接合機，則用於本發明打線接合機之現場氣體發生 器於標準溫度及壓力條件下較佳供應少於2〇〇 1/h加工氣 體。右該氣體發生器需對多個打線接合裝置供應加工氣 體，則需調整現場氣體發生器之產生速率。於彼情況中， 氣體發生器產生，例如，2〇〇 1/h至5〇〇 1/h加工氣體或3〇〇 Ι/h至1000 i/h加工氣體。 本發明尤其可用於將接合線接合至接合墊片，其中其等 接合線中至少一者係由鋼或銅合金製成。術語「由銅製 成」應意指接合線及/或接合墊片含有純銅或具有至少 銅含量之銅合金。 根據較佳實施例’氫氣係、由氣體發生器現場產生並隨後 供應至打線接合機中之電滎發生構件，如電漿喷燈。電漿 發生構件產生電毁’該電毁較佳係用於在接合區域中製造 150262.doc 201124221 還原氛圍。 本發明顯示許多優點。其中藉由省去氫氣儲氣罐提供該 裝置及方法改良之安全性。打線接合機使用者無需處理可 燃及具爆炸性之氫氣或含氫氣之混合物。此外，無需儲 存、移動或以較長距離地輸送氫氣或含氫氣之氣體混合 物，此減少空間、處理、管理及例如關於洩漏之安全性努 力之需求。此外，由於常與現場設備連接，故可降低遞送 需求及連接能量消耗。現場氣體發生容許甚至以少量製造 所需量。 【實施方式】 本發明及本發明之其他細節及較佳實施例揭示於下述實 &方式及附圖中。附圖顯示作為使用位點及將加工氣體供 應至打線接合裝置之接合區域之示意圖。 °羊田而s，圖1顯示本技藝之包含接合區域丨之接合裝 置對-玄接合區域供應自裝有例如氫氣與氮氣之混合物， 或作為替代方案’裝有純氫氣之儲氣罐2獲得之加工氣 體。 /根據本發日月’加卫氣體或加王氣體混合物之至少一組分 =昜製以而非自儲氣罐供應。將加工氣體或加工氣體混 α物仏應至接合裝置或直接供應至接合區域或接合裝置中 使用該加工氣體之任何構件。 2 2顯不根據本發明之打線接合裝置，其具有接合區域1 ^由s道4連接至通向接合區域1之入口 3之現場氣體發 生器5。此實例較佳對接合區域!提供純氫氣加工氣體，而 150262.doc 201124221 可避免氧化物於接合線及/或接合墊片上累積。例如，可 將水、NH3或碳水化合物作為輸入饋入氫氣發生器5並產生 作為輸出之A氣。所|生之氫氣離開1氣發生器5並經由 管道4饋入至接合區域1中。 因此本發明可安全且輕易地處理打線接合系統。使用者 無需處理可燃且具爆炸性之氫氣或含氫氣之混合物。由於 無需儲存氫氣，故可實質上降錢漏的機率，#此提高安 全性。 根據本發明之另一實施例，加工氣體混合物之至少一组 分係現場產生及加工氣體混合物之至少另—其他組分係自 氣體儲存裝置或儲氣罐供應。可將此等氣流作為獨立氣流 導入接合區域而不經任何預混合或可預混合兩或更多種氣 流及隨後導入接合區域。 —圖3顯示包含接合區域1及現場氣體發生器5及儲氣罐2之 實把例分J如，將水、ΝΗ3或碳水化合物饋入氣氣發生器 5。所產生之氫氣離開氫氣發生器5並經由管道9及管道4導 入至接合區域1中。將管道4連接至儲氣罐2及於通向接合 區域1之入口 3處終結。因此，首先將所產生之氣體，例 如：氫氣與來自錯氣罐之氣體，例如，氮氣混合，並隨後 將氫氣-氮氣混合物經由管道4導入至接合區域4。 於中顯不不預混合所產生之氣流9與自儲氣罐2提 出之孔體4之系統。特定言之，宜將不同加工氣流4、9導 入接合：域!之不同區域或不將其等中之—者或兩者直接 導入接°區域1而首先導入接合裝置中之子裝f，例如， I50262.doc 201124221 電漿發生裝置。 亦可將氣流4、9之第-部分料僅含卜種加工氣體之 純流導入接合區域艸及將此氣流之剩餘部分愈另一加工 氣體混合，然後饋入接合區域1十。例如，可自儲氣罐供 應氮氣，及針對惰性化目的將一部份氮氣以純氣體饋入接 &區域中H部份氮氣與已根據本發明現場製得之氫201124221 VI. Description of the Invention: [Technical Field] The present invention relates to a device for wire bonding, which comprises a guide groove for a joint line and a melting induction of a surface for a specified area of the surface of the fusion bonding wire The device thereby adjusting the bond wire to direct a designated area of the bond wire into the bond area and connect it to at least one bond tab, wherein the bond. The area contains - the process gas inlet. Furthermore, the present invention relates to a method for wire bonding comprising the steps of: joining a designated area of a bonding wire to a bonding pad' thereby pre-melting the surface of the designated area and introducing it during or after the σ processing The entire process is performed in the joint region of the process gas in the joint region. [Prior Art] Wire bonding system - a known manufacturing method for connecting electronic components, especially microelectronic parts, in the electronics industry. Micron non-electronic parts can also be connected by this method. The wire used usually has a very small diameter and is called an access line. Wire bonding is used to connect two or more parts in this line. Each Zero has at least a contact site, commonly referred to as a bonded cymbal. Such zeros (4) are, for example, metal or metallized parts of microcircuits, or any wafer module or other electronic component. fruit. Proof of hydrogen and . It has also been known that process gases can be used to improve the consolidation of several gas and gas mixtures for use in wire bonding processes, such as nitrogen, gas and/or argon, helium mixtures or others. The Eurasian, and Spring interface methods are known, and it is common to use aluminum or copper wires to use aluminum or copper wires. 150262.doc 201124221 When using copper wire or copper or copper alloy wire, it is known to encounter the problem of adhesive oxides. It is known that copper is at least slightly oxidized. Conductivity, bonding difficulties, and joint strength of copper oxide-containing wires are reduced by the presence of oxides on the surface of the copper-containing wires. All of the above possibilities for copper or copper alloy wires are referred to hereinafter as copper-containing wires and should cover pure copper wires and copper-containing wires containing at least 10% pure steel. Document US 6,234,3 76 discloses a method and apparatus for utilizing a process gas to reduce oxide formation and thereby improve the utilization of improved copper or aluminum bond wires. SUMMARY OF THE INVENTION The object of the present invention is to improve the supply of processing gases. This object is achieved by providing a device for wire bonding comprising a channel for bonding wires and a melt inducing device for melting the surface of the finger surface of the wire surface, whereby the wire guide is adapted A designated area of the bond wire is directed into the joint region and joined to at least one bond pad, wherein the joint region comprises an X-enriched gas population and is characterized in that the process gas inlet is coupled to a field gas generator that produces a process gas. The device for wire bonding below is also referred to as a wire bonding machine. The term "processing gas" shall, in particular, mean an inert gas such as nitrogen, argon or helium, and an active gas such as hydrogen which is reactive with the surface of the bonding wire and/or the bonding pad. The term "joining area" shall mean the area where the joining process is performed. In particular, the joint area is designed to seal the joint chamber. However, the joint area may also be a chamber that is partially or completely open to the surroundings. According to the present invention, at least a portion of the gas is generated on site, and the site is near the site of 150262.doc 201124221. The advantage of this solution is that the gas tank can be omitted. For example, an on-site nitrogen generator can provide an inert atmosphere within the junction region, for example, a nitrogen generating unit comprising a PSA (. pressure swing adsorption) or membrane. According to another example, a hydrogen generator can be used, for example, an electrolysis, ammonia cracking or carbohydrate reforming type generator. The generated hydrogen gas can be used alone as a processing gas for the m-wire bonding device or can be mixed with other gases. The wire bonding machine is a relatively small machine and therefore the volume of the joint area is relatively small. At standard temperature and qing τρ), the amount of gas required during the bonding process is generally in the range of (10) / hour (i / h). Therefore, according to the better solid column, the field generator is designed A process gas of less than _1/h is produced under force standard conditions (πρ), preferably less than _i/h of process gas 'better than less than 200 l/h of process gas. According to a consistent embodiment of the invention, the gas generator is connected to the inlet by a first tube. Preferably, the gas generator is used to produce an inert gas, especially nitrogen, and/or an active process gas such as a process gas, such as hydrogen, which can be excited in the plasma. According to a preferred embodiment of the invention, the second tube is connected to the first tube or another population or gas reservoir leading to the junction region. Therefore, the second pipe connects the gas storage tank to the wire bonding device, and can use the gas storage tank to wire bonding machine, especially for joining (I domain supply inert gas. The gas storage tank can also be used for storage and bonding wires, joint gaskets) a process gas that reacts with a substance, particle, or gas that is present on or around the surface of the bond wire or the gasket. This embodiment is advantageous because the process gas mixture supplied by the gas tank, for example, nitrogen, a combination of hydrogen produced by the on-site gas generator. The gas can be supplied with water, NH3 and/or carbohydrates. Preferably, the wire bonding machine is supplied with nitrogen and hydrogen, of which :>' is produced on site. For example, 'use a mixture of nitrogen and hydrogen containing 3% to 1% hydrogen, preferably 3% to 2% hydrogen, more preferably 5°/. to 1 〇. % hydrogen of a mixture of nitrogen and hydrogen. According to another embodiment of the invention, the first tube is connected to the second tube at a junction upstream of the process gas inlet of the junction region. Therefore, preferably only one inlet is required Or a plurality of process gases are introduced into the joint zone. According to another embodiment of the invention, the mixer is placed at the junction. The mixer is used to provide a predetermined percentage of the components of the process gas mixture, such as 'nitrogen and hydrogen. The percentage of hydrogen in the gas mixture determines the reduction of the process gas mixture and is therefore a preferred target. For example, a mixer can be used to roll the resulting jibs from the nitrogen gas storage tank. Supply of nitrogen gas mixture. For example, the oxygen scavenger is connected to the first and/or second tubes upstream of the interface to control the processing gas entering another process area according to the present invention into the process gas and/or An oxygen content of a component of a process gas, such as a catalytic oxygen scavenger. According to another embodiment of the present invention, a second gas generator is used, for example, nitrogen gas. _ _ rolling 1 ecology. According to this embodiment, the first gas generator can save any gas storage tank, „ , „ ^ 巩罐, for example, two scene gas stolen (a glimpse The combination of the generator and a nitrogen private & rolling I ecology) is extremely advantageous. However, if the two types of processing gases are required in the wire bonding machine, two on-site gas generators and/or multiple bets can be used. The object of the present invention is also achieved by a wire bonding method comprising the steps of: generating at least a portion of a process gas by an on-site gas generator. According to another embodiment, the process gas is The gas tank supply or the second gas produced by the second field gas generator is mixed and subsequently introduced into the joint zone. According to another embodiment, 'the deaerator purifier is used somewhere upstream of the inlet to the joint area to remove At least a portion of the oxygen content of the processing gas or process gas component. According to another embodiment of the invention, the gas generator can be used to supply a plurality of S-devices with process gases. The general processing gas consumption of the wire bonding machine is in the range of 20 to 100 1/h (STP). Therefore, if the field generator only supplies the wire bonding machine, the on-site gas generator used in the wire bonding machine of the present invention preferably supplies less than 2 〇〇 1 / h of processing gas under standard temperature and pressure conditions. To the right, the gas generator needs to supply the machining gas to a plurality of wire bonding devices, and the production rate of the field gas generator needs to be adjusted. In the case of the gas generator, for example, 2 〇〇 1/h to 5 〇〇 1/h of process gas or 3 Ι h/h to 1000 i/h of process gas is produced. The invention is particularly useful for joining bond wires to bond pads wherein at least one of the bond wires is made of steel or a copper alloy. The term "made of copper" shall mean that the bonding wires and/or the bonding pads contain pure copper or a copper alloy having a copper content. According to a preferred embodiment, a hydrogen system, an electric generating member, such as a plasma torch, is produced in situ by a gas generator and then supplied to a wire bonding machine. The plasma generating component produces electrical damage. This electrical destruction is preferably used to create a reducing atmosphere in the joint region. The present invention shows a number of advantages. The safety of the device and method is improved by eliminating the hydrogen storage tank. Wire bonding machines do not require the treatment of flammable and explosive hydrogen or hydrogen containing mixtures. In addition, there is no need to store, move or transport hydrogen or a hydrogen-containing gas mixture over long distances, which reduces the need for space, handling, management, and safety efforts such as leaks. In addition, because it is often connected to field devices, delivery requirements and connection energy consumption can be reduced. On-site gas generation allows for even the required amount to be manufactured in small quantities. [Embodiment] The invention and other details and preferred embodiments of the invention are disclosed in the following <RTIgt; The drawing shows a schematic view of the joint area as a use site and supply of processing gas to the wire bonding apparatus. ° Yang Tian and s, Figure 1 shows that the joining device of the prior art comprising the joint region 对 is supplied from a mixture containing, for example, hydrogen and nitrogen, or alternatively, the gas storage tank 2 containing pure hydrogen is obtained. Processing gas. / According to this date of the month, at least one component of the gas or king gas mixture = 昜 is supplied instead of the gas tank. The process gas or process gas mixture is applied to the joining device or directly to the joining region or any component of the joining device that uses the process gas. 2 2 shows a wire bonding apparatus according to the present invention having a joint region 1 ^ connected by an s-way 4 to a field gas generator 5 leading to an inlet 3 of the joint region 1. This example preferably provides a pure hydrogen processing gas to the joint region! 150262.doc 201124221 prevents oxide buildup on the bond wires and/or bond pads. For example, water, NH3 or carbohydrate can be fed as an input to the hydrogen generator 5 and produce an A gas as an output. The hydrogen gas is taken out of the gas generator 5 and fed into the joint region 1 via the pipe 4. Therefore, the present invention can safely and easily handle the wire bonding system. The user does not have to deal with flammable and explosive hydrogen or a mixture containing hydrogen. Since there is no need to store hydrogen, it can reduce the probability of money leakage, which improves safety. In accordance with another embodiment of the present invention, at least one of the at least one component of the process gas mixture is supplied from the gas storage device or the gas storage tank. These streams can be introduced as separate streams into the joint zone without any premixing or premixing of two or more streams and subsequent introduction into the joint zone. - Figure 3 shows an example of the inclusion of the junction zone 1 and the on-site gas generator 5 and the gas storage tank 2, for example, feeding water, helium 3 or carbohydrates to the gas generator 5. The generated hydrogen leaves the hydrogen generator 5 and is introduced into the joint region 1 via the pipe 9 and the pipe 4. The pipe 4 is connected to the gas storage tank 2 and terminates at the inlet 3 leading to the joint area 1. Therefore, the generated gas, for example, hydrogen is mixed with a gas from a gas cylinder, for example, nitrogen, and then a hydrogen-nitrogen mixture is introduced into the joint region 4 via the pipe 4. The system in which the gas stream 9 generated by the pre-mixing is not pre-mixed with the pore body 4 raised from the gas storage tank 2 is shown. In particular, it is preferable to introduce the different process air flows 4, 9 into the different regions of the domain: or to introduce them directly into the junction region 1 and first to introduce the sub-assembly f in the bonding device, for example, I50262.doc 201124221 Plasma generating device. Alternatively, the first portion of the gas streams 4, 9 may be introduced into the joint region only by the pure stream containing the processing gas, and the remainder of the gas stream may be mixed with another processing gas and then fed into the joint region. For example, nitrogen can be supplied from a gas storage tank, and a portion of the nitrogen gas is fed as a pure gas to the H-part nitrogen in the & region for hydrogenation purposes and hydrogen produced in situ according to the present invention.

氣混合。獨立地將彼氫氣.氮氣混合物饋入接合區域並用 作用於在例如接合區域内之A A 體。 戍内之局…產生電聚之電聚氣 亦可使用含三或更多種組分之加工氣體混合物。各組分 Z由發生器現場製造或自氣體儲集器供應。亦可現場製造 —組分及將其他組分作為氣體混合物儲存於儲氣罐中。 圖4顯示包含接合區域i、現場氣體發生器5、儲氣罐2及 通合器6之本發明裝置。除混合器6外，圖4中所顯示之所 有其他組件均與圖3相同。於管道4與管道9之連接點處安 裝混，器6並用於改良由兩管道4及9供應之兩種氣體之混 口二组發生5之容量較佳係可調整。因此，藉由將自 :氣罐H、應之諸如氮氣之基質氣體與由氣體發生器$製造 之氫氣混合’可產生於基質氣體中具有不同百分比氯氣之 t工氣體混合物。可根據接合方法調整加工氣體混合物之 氧氣含量。 除將來自館氣罐之高純度氣體供應至接合區域外，亦可 職體純化器添加至氣體供應系統。首先將自儲氣罐提出 之乱體饋人诸如除氧淨化器之氣體純化單元以純化氣體， 150262.doc 201124221 例如，移除殘餘氧氣。隨後將經純化之氣體饋入接合區 域。如上所述，可將經純化之氣體作為獨立氣流或與由氣 體發生器產生之氣流一起導入接合區域。 圓5顯示此系統之一實例。本發明裝置包含接合區域玉、 現％氣體發生器5、儲氣罐2及除氧淨化器7。使用除氧淨 化器7令使用裝有低純度氣體（例如低純度氮氣）之儲氣罐2 成為可能。除氧淨化器7將殘餘氧氣自低純度.氮氣移除。 隨後將經純化之氮氣導入接合區域1。 亦可使用淨化器以將非所需組分自氣體發生器製造之氣 體移除。根據另一較佳實施例’將氣體淨化器，例如，除Gas mixing. The hydrogen gas mixture is fed independently to the joint region and acts on the A A body, for example, in the joint region. The inside of the crucible...the electropolymerized gas that produces electricity can also be used as a processing gas mixture containing three or more components. Each component Z is manufactured on-site by the generator or supplied from a gas reservoir. It is also possible to manufacture on-site components and store the other components as a gas mixture in a gas storage tank. Figure 4 shows the apparatus of the invention comprising a joint zone i, a field gas generator 5, a gas storage tank 2 and a coupler 6. Except for the mixer 6, all other components shown in Fig. 4 are the same as those of Fig. 3. At the junction of the pipe 4 and the pipe 9, the mixer 6 is installed and used to improve the mixing of the two gases supplied by the two pipes 4 and 9 and the capacity of the group 5 is preferably adjustable. Therefore, a t-gas mixture having a different percentage of chlorine in the matrix gas can be produced by mixing the gas from the gas tank H, the substrate gas such as nitrogen, and the hydrogen gas produced by the gas generator $. The oxygen content of the process gas mixture can be adjusted according to the joining method. In addition to supplying high purity gas from the gas tank to the joint area, a body purifier can be added to the gas supply system. The chaotic body proposed from the gas storage tank is first fed to a gas purification unit such as an oxygen scavenger to purify the gas, for example, removing residual oxygen. The purified gas is then fed into the junction zone. As described above, the purified gas can be introduced into the joint region as a separate gas stream or together with the gas stream generated by the gas generator. Circle 5 shows an example of this system. The apparatus of the present invention comprises a joint region jade, a current % gas generator 5, a gas storage tank 2, and a deaerator purifier 7. The use of the oxygen scavenger 7 makes it possible to use the gas storage tank 2 equipped with a low purity gas such as low purity nitrogen. The oxygen scavenger 7 removes residual oxygen from the low purity. nitrogen. The purified nitrogen gas is then introduced into the joint region 1. A purifier can also be used to remove undesired components from the gas produced by the gas generator. According to another preferred embodiment, a gas purifier, for example,

氧淨化器用於純化由氣體發生器製造之氣體及自儲氣罐供 應之氣體。 A 根據另一較佳實施例，加工氣體之兩或更多種組分較 佳加工氣體之所有組分均係由一或多個氣體發生器製造。 圖6顯示包含接合區域〗及兩現場氣體發生器5、8及除氧淨 化器7之裝置。除第二現場氣體發生器8外，圖6中所顯示 之所有其他組件均與圖5中相同。第二現場氣體發生器8 係^，例如’包含出〇管道4之氮氣發生器8。將除氧淨化°器 7安裝於管道4與管道9之連接點處並用於清潔由管道4及管 道9供應之兩氣體。因此，可將已完全由現場氣體發生器 5、8產生之極潔淨加工氣體經由管道4供應至接合區域工 中。根據本發明之此實例，不再需求儲氣罐。 亦可使用上述任—發明實施例以供應多個接合區域。圖 8顯示此系統之-實例。該系統類似於圖3中所顯示者，然 150262.doc -12- 201124221 而，與僅-接合區域不同的是，存在以來自氣體發生器$ 及來自儲氣罐2之氣體供應之3個接合區域“、心ic。。 【圖式簡單說明】 圖1顯示本技藝之對接合區域供應加工氣體之儲氣罐， 圖2顯示包含接合區域及現場氣體發生器之本發明 置， 、 圖3顯不包含接合區域及現場氣體發生器及儲氣罐之 發明裝置， ~ + T 4顯示包含接合區域、現場氣體發生器、儲氣罐及混 合器之本發明裝置， 圖5顯示包含接合區域、現場氣體發生器、儲氣罐及除 氧淨化器之本發明裝置， 圖6顯示包含接合區域及兩現場氣體發生器及除氧淨化 器之本發明裝置， 圖7顯示包含接合區域、現場氣體發生器及儲氣罐而無 混合器之本發明裝置，及 圖8顯示本發明之另一較佳實施例。 【主要元件符號說明】 1 接合區域 la 接合區域 lb 接合區域 1 c 接合區域 2 儲氣罐 3 加工氣體入 150262.doc 201124221 4 管道 5 現場氣體發生器 6 混合器 7 除氡淨化器 8 現場氣體發生器 9 管道 150262.doc -14-The oxygen purifier is used to purify the gas produced by the gas generator and the gas supplied from the gas storage tank. A According to another preferred embodiment, all of the components of the processing gas that are better than two or more of the processing gases are produced by one or more gas generators. Figure 6 shows a device comprising a joint region and two field gas generators 5, 8 and a deaerator cleaner 7. Except for the second field gas generator 8, all other components shown in Fig. 6 are the same as in Fig. 5. The second field gas generator 8 is, for example, a nitrogen generator 8 containing a helium conduit 4. The oxygen scavenger 7 is installed at the junction of the pipe 4 and the pipe 9 and is used to clean the two gases supplied from the pipe 4 and the pipe 9. Therefore, the extremely clean process gas which has been completely generated by the on-site gas generators 5, 8 can be supplied to the joint area via the pipe 4. According to this example of the invention, the gas storage tank is no longer required. The above-described embodiments of the invention may also be used to supply a plurality of joint regions. Figure 8 shows an example of this system. The system is similar to that shown in Figure 3, but 150262.doc -12- 201124221, and unlike the only-joining area, there are 3 joints from the gas generator $ and the gas supply from the gas storage tank 2 Area ", heart ic." [Simple description of the drawings] Figure 1 shows the gas storage tank for supplying processing gas to the joint area of the present technology, and Figure 2 shows the present invention including the joint area and the field gas generator, Fig. 3 Invented device that does not include the joint area and the on-site gas generator and the gas tank, ~ + T 4 shows the device of the present invention including the joint area, the field gas generator, the gas tank and the mixer, and FIG. 5 shows the joint area, the site The apparatus of the present invention for a gas generator, a gas storage tank and an oxygen scavenger, FIG. 6 shows the apparatus of the present invention including a joint region and two on-site gas generators and an oxygen scavenger, and FIG. 7 shows a joint region, a field gas generator. And a gas storage tank without a mixer of the present invention, and Fig. 8 shows another preferred embodiment of the present invention. [Main element symbol description] 1 joint area la joint area lb joint area Domain 1 c Junction area 2 Gas tank 3 Process gas into 150262.doc 201124221 4 Pipe 5 Field gas generator 6 Mixer 7 Dehumidifier 8 Field gas generator 9 Pipe 150262.doc -14-

Claims (1)

201124221 七、申請專利範圍： 1· -種用於打線接合之裝置，其包含用於接合線之導槽及 用於熔融6亥接合線表面之指定區域表面之熔融誘發裝 置，其中該接合線導槽適於引導該接合線之指定區域至 2合區域⑴中並將其連接至至少—接合墊片，其中該接 合區域⑴包含加工氣體入口 (3) ’其特徵在於該加工氣 體入口（3)係連接至產生加工氣體之現場氣體發生器 2.如，求項1之裝置，其進一步包含用於在將加工氣體（4、 ^導入至該接合區域⑴之前，純化該加玉氣體或-部份 =體(4、9)之氣體淨化器⑺，較佳為除氧淨化器。 诵h拉入 -特徵在於第二管道⑼係連接至 通向该接合區域（1) 氣罐⑺。（)之门或另-加工氣體入口⑺及儲 4.如請求項3之裝置，其特徵 合區域Λ T a 官道（4)係於該接 —()之加工氣體入D(3)上游夕^ 二管道（9)。. 4接Μ連接至第 5.如請求項4之襄置，其包含 (6)。 χ逆接點處之混合器 6. 0月米項4或5之裝 穴π信又. 至位於該接合區域⑴之加工j 及/或第二管道（4、9)。 除氧淨化器（7)連接 口（3)上游之該第一201124221 VII. Patent application scope: 1. A device for wire bonding, which comprises a guiding groove for a bonding wire and a melting inducing device for melting a surface of a designated area of the surface of the bonding wire, wherein the bonding wire guide The groove is adapted to guide a designated area of the bond wire into the 2-to-region (1) and to connect it to at least the joint gasket, wherein the joint region (1) comprises a process gas inlet (3) 'characterized by the process gas inlet (3) Is connected to a field gas generator that produces a process gas. 2. The apparatus of claim 1, further comprising: for purifying the jade gas or portion before introducing the process gas (4, ^ into the joint region (1) Part = body (4, 9) gas purifier (7), preferably oxygen scavenger. 诵h pull-in feature that the second pipe (9) is connected to the gas zone (7) leading to the joint zone (1). Door or other-processed gas inlet (7) and storage 4. The apparatus of claim 3, characterized in that the area Λ T a official road (4) is connected to the processing gas of the connection - () upstream of D (3) ^ Two pipes (9). 4 connections are connected to the fifth. Set, which contains (6). Mixer at the hiccup junction 6. 0 month rice item 4 or 5 of the hole π letter again. to the processing area (1) processing j and / or the second pipe (4, 9 The first of the upstream of the oxygen removal purifier (7) connection port (3) 如請求項】至6令任(8) 〇 項之裳置 其包含第二氣體發生器 I50262.doc 201124221 8*如印求項1至7中任一項之裝置，其特徵在於該現場發生 器係經設計以於標準條件（STp)下製造少於1〇〇〇 l/h之加 工氣體，較佳少於50〇 1/h之加工氣體，更佳少於2〇〇 1/h 之加工氣體。 9.種用於打線接合之方法，其包含下列步驟：將接合線 之指定區域連接至接合塾片，藉此預炼融該指定區域之 表面並於含有加工氣體之接合區域（丨）中實施整個加工， 該加工氣體係於接合加工之前或期間導入至該接合區域 中，其特徵在於至少-部份加工氣體係由現場氣體發生 器（5)產生。 10.如請求項9之方法，其特徵在於將該加工氣體與由儲氣 罐⑺供應或由第二現場氣體發生器⑻產生之第二氣體 混合及隨後導入至該接合區域（1)中。 11. 如請求項9或1〇之方法，其特徵在於在通向該接合區域 之入口（3)上游某處使用除氧淨化器（7)，以移除該加工 氣體或加工氣體組分中之至少一部份氧含量。 12. 如請求項9至11中任—項之方法，其特徵在於藉由該氣 體發生器（5)產生含氫氣體。 其特徵在於藉由該氣 其特徵在於該接合線 其特徵在於由該現場 生少於1000 l/h之加工 13.如請求項9至12中任一項之方法 體發生器（5)產生含氮氣體。 14·如請求項9至13中任一項之方法 及/或該接合墊片係由銅製成。 15.如凊求項9至14中任一項之方法， 氣體發生器於標準條件（STP)下產 J50262.doc 201124221 氣體，較佳少於500 l/h之加工氣體，更佳少於200 l/h之 加工氣體。 150262.docThe apparatus of any one of the items 1 to 7 of the present invention is characterized in that the apparatus of the present invention is characterized in that the apparatus of the present invention is characterized in that Designed to produce less than 1〇〇〇l/h of process gas, preferably less than 50〇1/h of process gas, preferably less than 2〇〇1/h, under standard conditions (STp) gas. 9. A method for wire bonding comprising the steps of: joining a designated region of a bonding wire to a bonding die, thereby pre-smelting a surface of the designated region and performing in a bonding region (丨) containing a processing gas Throughout the processing, the process gas system is introduced into the joint zone prior to or during the joining process, characterized in that at least a portion of the process gas system is produced by the field gas generator (5). 10. The method of claim 9, characterized in that the process gas is mixed with a second gas supplied from a gas storage tank (7) or generated by a second field gas generator (8) and subsequently introduced into the joint region (1). 11. The method of claim 9 or 1 characterized by using an oxygen scavenger (7) somewhere upstream of the inlet (3) leading to the joint region to remove the process gas or process gas component At least a portion of the oxygen content. 12. The method of any of clauses 9 to 11, characterized in that the hydrogen generator gas is produced by the gas generator (5). It is characterized in that the gas is characterized in that the bonding wire is characterized by a process of producing less than 1000 l/h from the site. 13. The method body generator (5) according to any one of claims 9 to 12 Nitrogen gas. The method of any one of claims 9 to 13 and/or the joint gasket is made of copper. 15. The method of any one of clauses 9 to 14, wherein the gas generator produces J50262.doc 201124221 gas under standard conditions (STP), preferably less than 500 l/h of processing gas, more preferably less than 200 l/h processing gas. 150262.doc
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