KR20110038583A - Method and device for wire bonding - Google Patents

Method and device for wire bonding Download PDF

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KR20110038583A
KR20110038583A KR20100095449A KR20100095449A KR20110038583A KR 20110038583 A KR20110038583 A KR 20110038583A KR 20100095449 A KR20100095449 A KR 20100095449A KR 20100095449 A KR20100095449 A KR 20100095449A KR 20110038583 A KR20110038583 A KR 20110038583A
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gas
bonding
process gas
wire
wire bonding
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KR20100095449A
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Korean (ko)
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크리스토프 라우멘
팡 링 히에
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린데 악티엔게젤샤프트
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Publication of KR20110038583A publication Critical patent/KR20110038583A/en

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/002—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating specially adapted for particular articles or work
    • B23K20/004—Wire welding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67138—Apparatus for wiring semiconductor or solid state device
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/42—Printed circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/4501—Shape
    • H01L2224/45012—Cross-sectional shape
    • H01L2224/45015—Cross-sectional shape being circular
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/781—Means for controlling the bonding environment, e.g. valves, vacuum pumps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85053—Bonding environment
    • H01L2224/85054—Composition of the atmosphere
    • H01L2224/85065—Composition of the atmosphere being reducing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85053—Bonding environment
    • H01L2224/85054—Composition of the atmosphere
    • H01L2224/85075—Composition of the atmosphere being inert
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01018—Argon [Ar]
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    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
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    • H01—ELECTRIC ELEMENTS
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Wire Bonding (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)

Abstract

PURPOSE: A method and device for bonding a wire are provided to prevent oxide from being accumulated on a bonding wire and/or bond pad by supplying pure hydrogen process gas to a bonding area. CONSTITUTION: A device for bonding a wire includes a bond wire guide unit and a melting guide device. The melting guide device melts the limited part of the bond wire surface. The bond wire guide unit guides the limited part of the bond wire to a bonding area(1) and connects the limited part of the bond wire to one or more bond pads. The bonding area includes a process gas inlet(3). A process gas inlet is connected to an on-site gas generator(5) which generates process gas.

Description

Wire Bonding Method and Apparatus {METHOD AND DEVICE FOR WIRE BONDING}

The present invention relates to a device for wire bonding, wherein the device for wire bonding comprises a guide for a bond wire and a melt induction device for melting the surface of a defined area of the bond wire surface, whereby the bond wire guide is bonded And guide a confined region of the wire to a bonding zone and connect to one or more bond pads, the bonding zone including a process gas inlet. The present invention also relates to a method for wire bonding, wherein the method includes connecting a confined region of the bond wire to the bond pad, whereby the surface of the confined region is pre-melted and the entire process is carried out with a process gas. In a bonding zone, the process gas is directed into the bonding zone prior to or during the bonding process.

Wire bonding is a production process known in the electrical industry and is used to connect electrical parts, in particular to parts of microelectronic devices. In addition, micro-sized non-electronic portions can also be connected in this way. The wires used are generally of very small diameter and are called bond wires. Wire bonding is used to connect two or three or more portions using such a wire. Each portion has one or more contact sites, collectively referred to as bonding pads. The part may be a metal part or a metallized part of a microcircuit, for example, any chip module or other electronic device part.

The use of process gases is widely known to improve the results of wire bonding processes. There are several gases and gas mixtures that have proved particularly useful, for example nitrogen, hydrogen and mixtures of nitrogen and / or argon, helium or other gases.

In known wire bonding methods, gold wire or gold alloy wire is generally used. It is also known to use aluminum or copper wires.

Problems with adhesive oxides are known when using copper wires or copper or copper alloy containing wires. Copper is known to be at least slightly oxidized. The conductivity, ease of bonding, and joint strength of the oxidized copper containing wire are reduced by the presence of oxides on the surface of the copper containing wire. In the following, a possible example of the aforementioned copper or copper (alloy) containing wire is referred to as copper containing wire and such copper alloy wire will include not only pure copper wire but also copper containing wire comprising at least 10% pure copper.

US 6,234,376 discloses a wire bonding apparatus and method using a process gas to reduce oxide formation and thus to improve the utility of copper or aluminum bonding wires.

It is an object of the present invention to improve the supply of process gas.

This object is achieved by providing a device for wire bonding comprising a guide for the bond wire and a melt induction device for melting the surface of the confined area of the bond wire surface, whereby the bond wire guide provides a confined area of the bond wire. Configured to lead to a bonding zone and connect to one or more bond pads, the bonding zone including a process gas inlet, the process gas inlet being connected to an on-site gas generator that generates process gas. It is characterized by.

The following apparatus for wire bonding is also called a wire bonder.

The term “process gas” shall mean in particular an inert gas such as nitrogen, argon or helium and an active gas which reacts with the surface of the bond wire and / or bond pad, such as hydrogen.

The term "bonding zone" will mean the zone where the bonding process is carried out. In particular, the bonding zone is designed as a closed bonding room. However, the bonding zone may also be a volume that is partially or wholly open to the periphery.

According to the invention, at least a portion of the process gas is generated on-site, ie adjacent to the point of use. This solution offers the advantage of making the gas storage device unnecessary. For example, the on-site nitrogen generator may provide an inert atmosphere inside the bonding zone, for example the nitrogen generating unit comprises a PSA (Pressure Swing Adsorption) or a membrane. According to another example, a hydrogen generator may be used, for example an electrolytic, ammonia cracking or hydrocarbon reforming type generator may be used. The hydrogen produced may be used alone or in admixture with other gases to be used as process gas for the wire bonding apparatus.

Wire bonders are relatively few machines and therefore the volume of the bonding zone is also relatively small. The amount of gas required during the bonding process is typically in the range of about 10 liters per hour (l / h) at standard temperature and pressure (STP). Thus, according to a preferred embodiment, the on-site generator is provided with a process gas of less than 1000 l / h, preferably less than 500 l / h, more preferably 200 l / h under standard conditions (STP). Is designed to produce process gas.

According to an embodiment of the invention, the gas generator is connected to the inlet through the first pipe. Preferably, the gas generator is used to produce an inert gas, in particular nitrogen, and / or a process gas, in particular hydrogen, which can be activated in an active process gas, for example a plasma.

According to a preferred embodiment of the invention, the second pipe is connected to the first pipe or to another inlet to the bonding zone and to the gas reservoir. Thus, the second pipe connects the gas reservoir with the wire bonding device. The gas reservoir may be used to supply inert gas to the wire bonder, in particular to the bonding zone. In addition, gas reservoirs may be used to store bond wires, bond pads, substrates, and process gases that react with particles or gases on or near the surface of the bond wires or bond pads. This embodiment is preferred because there is an opportunity to combine the process gas mixture, for example, nitrogen supplied by the gas barrier with hydrogen produced by the on-site generator. Such hydrogen generators may be fed with water, NH 3 , and / or hydrocarbons.

Preferably, the wire bonder is fed with nitrogen and hydrogen, at least one of which is produced on-site. For example, a mixture of hydrogen and nitrogen comprising 3% to 100% hydrogen is used, preferably a mixture of hydrogen and nitrogen comprising 3% to 20% hydrogen, even more preferably 5% to 10% hydrogen. Is used.

According to another embodiment of the invention, the first pipe is connected to the second pipe at a connection point upstream of the process gas inlet of the bonding zone. As such, only one inlet is needed to introduce the process gas or process gases into the bonding zone.

According to another embodiment of the invention, the mixer is arranged at the connection point. By using such a mixer, it is possible to provide each component of the process gas mixture at a predetermined percentage. For example, the percentage of hydrogen in the gas mixture of nitrogen and hydrogen determines the reducing effect of the process gas mixture and thus becomes the desired object of predetermination. For example, a mixer may be used to mix the generated hydrogen with the nitrogen supplied from the nitrogen gas reservoir.

According to another embodiment of the present invention, a deoxopurifier is connected to the first and / or second pipes upstream of the process gas inlet of the bonding zone, and thus of the components of the process gas and / or of the process gas. The oxygen component of can be controlled. For example, a catalytic dioxo purifier may be used.

According to yet another embodiment of the present invention, a second gas generator is provided. This second gas generator is, for example, a nitrogen generator. According to this embodiment, the second gas generator may make the gas storage container unnecessary. For example, a combination of two on-site gas generators, one hydrogen generator and one nitrogen generator, may be very desirable. However, if two or more process gases are needed in the wire bonder, two on-site generators and one or more gas reservoirs may be used.

It is also an object of the present invention to be achieved by a wire bonding method comprising producing at least a portion of a process gas by an on-site gas generator.

According to another embodiment of the invention, the process gas is mixed with a second gas supplied by an air reservoir or produced by a second on-site gas generator and then introduced into a bonding zone.

According to yet another embodiment of the present invention, a dioxo purifier is used upstream of the inlet to the bonding zone to remove at least a portion of the oxygen content in the process gas or among the components of the process gas.

According to another embodiment of the present invention, the gas generator (s) may be used to supply process gas to a plurality of bonding devices. Typical process gas consumption of the wire bonder is 20 to 100 l / h (STP). Thus, if the on-site generator feeds with only one wire bonder, preferably the on-site gas generator for the wire bonder according to the invention supplies less than 200 l / h under standard temperature and pressure conditions. . If the gas generator supplies process gas to multiple wire bonding devices, the manufacturing speed of the on-site gas generator will have to be adjusted accordingly. In such a case, the gas generator will produce, for example, 200 to 500 l / h of process gas or 300 to 1000 l / h of process gas.

The present invention is particularly useful when bonding a bond wire to a bond pad, wherein at least one of the bond wire and the bond pad is made of copper or a copper alloy. The term "made of copper" refers to bond wires and / or bonds It means that the pad comprises pure copper or a copper alloy with a copper content of at least 10%.

According to a preferred embodiment, hydrogen is produced on-site by the gas generator and then supplied to plasma generating means such as a plasma torch in the wire bonder. The plasma generating means generates a plasma, which plasma is preferably used to generate a reducing atmosphere in the bonding zone.

The present invention has many advantages. Among the advantages, the removal of the hydrogen reservoir can improve the safety of the apparatus and method. Users of wire bonding devices no longer have to handle hydrogen or hydrogen containing mixtures that may ignite and explode. In addition, there is no need to store, move or pipe long distances of hydrogen or hydrogen containing gas mixtures, which makes less effort in space saving, handling, supervision and safety efforts, for example leakage. In addition, with respect to on-site facilities, there is an advantage that the supply needs and the associated energy consumption are reduced. On-site gas generators offer the advantage of being able to produce as much as needed even in small quantities.

The following description and the annexed drawings further describe the present invention and embodiments of the present invention. The accompanying drawings show the bonding zone at the point of use and the process gas supply to the bonding zone of the wire bonding device.

1 is a view showing a gas storage container for supplying a process gas to the bonding zone according to the prior art.
2 shows a device according to the invention comprising a bonding zone and an on-site gas generator.
3 shows a device according to the invention comprising a bonding zone, an on-site gas generator and a gas reservoir.
4 shows a device according to the invention comprising a bonding zone, an on-site gas generator, a gas reservoir and a mixer.
FIG. 5 shows an apparatus according to the invention comprising a bonding zone, an on-site gas generator, a gas reservoir and a dioxo purifier.
6 shows a device according to the invention comprising a bonding zone, two on-site gas generators and a dioxo purifier.
FIG. 7 shows a device without a mixer according to the invention comprising a bonding zone, an on-site gas generator and a gas generator.
8 is a view showing another preferred embodiment of the present invention.

Specifically, FIG. 1 shows the current state of the art, for example a bonding zone 1 supplied by a process gas taken from a gas reservoir 2 comprising a mixture of hydrogen and nitrogen or alternatively pure hydrogen as an alternative. Is a view showing a bonding apparatus including a).

According to the invention, one or more components of the process gas or process gas mixture are produced in an on-site manner without being supplied from the gas reservoir. The process gas or process gas mixture is fed to the bonding apparatus in such a way that it is fed directly into the bonding zone or by means in the bonding apparatus using the process gas.

FIG. 2 shows an apparatus for wire bonding according to the present invention, in which an on-site gas generator connected to an inlet 3 to the bonding zone 1 via a bonding zone 1 and a pipe 4 is shown. 5 is a view showing. This example is preferred because it can provide pure hydrogen process gas to the bonding zone 1 to prevent the accumulation of oxides on the bonding wires and / or bond pads. For example, water, NH 3 or a hydrocarbon can be fed to the hydrogen generator 5 as input and hydrogen can be produced as output. The generated hydrogen is supplied from the hydrogen generator 5 through the pipe 4 to the bonding zone 1.

Accordingly, the present invention provides a wire bonding system that is safe and easy to handle. The user does not have to handle hydrogen or a hydrogen containing mixture which is likely to ignite and explode. Since there is no need to store hydrogen, the chance of leakage is inherently reduced, thus increasing safety.

According to another embodiment of the invention, one or more components of the process gas mixture are generated in an on-site manner and one or more other components of the process gas mixture are supplied from a gas storage device or gas reservoir. These gas streams may be directed to the bonding zone as separate gas streams without premixing, or two or three or more gas streams may be premixed and directed to the bonding zone.

3 shows an embodiment comprising a bonding zone 1, an on-site gas generator 5 and a gas reservoir 2. For example, water, NH 3 or hydrocarbons are fed to the hydrogen generator 5. The generated hydrogen leaves the hydrogen generator 5 and is supplied to the bonding zone 1 through the pipe 9 and the pipe 4. The pipe 4 is connected to the gas reservoir 2 and terminates at the inlet 3 to the bonding zone 1. Thus, the generated gas, for example hydrogen, is first mixed with the gas from the gas reservoir, for example nitrogen, and then the hydrogen-nitrogen-mixture is fed through the pipe 4 to the bonding zone 1.

In FIG. 7, the gas stream 9 produced and the gas 4 extracted from the gas reservoir 2 are shown in the absence of premixing. This arrangement allows the bonding device to be first used when several process gas streams 4, 9 are directed to different zones of the bonding zone 1 or one or both of these gas streams are not directly introduced into the bonding zone 1. Particular preference is given when supplied to a sub-device within, for example a plasma generating device.

It is also possible to feed the first portion of one of the streams 4, 9 to a pure stream containing only process gas and to mix the remainder of this gas stream with other process gas prior to feeding it to the bonding zone 1. will be. For example, nitrogen may be supplied from the gas storage vessel and for the purpose of inerting, some of the nitrogen may be supplied as a pure gas into the bonding zone. Another portion of nitrogen is mixed with hydrogen produced in an on-site manner in accordance with the present invention. Such a hydrogen-nitrogen mixture is supplied separately to the bonding zone and used, for example, as a plasma gas for generating plasma at local spots in the bonding zone.

It is also possible to use process gas mixtures comprising three or four or more components. One component may be produced on-site by the generator or may be supplied from a gas reservoir. In addition, one component may be produced on-site and the other components may be provided as a gas mixture stored in a gas reservoir.

4 shows a device according to the invention comprising a bonding zone 1, an on-site gas generator 5, a gas reservoir 2 and a mixer. Except for the mixer 6, all other parts shown in FIG. 4 are identical to those shown in FIG. At the connection point of the pipe 4 and the pipe 9, the mixer 6 is integrated and used to improve the mixing of the two gases supplied by the two pipes 4 and 9. Preferably, the capacity of the gas generator 5 can be adjusted. Thus, by mixing a base gas, such as nitrogen, supplied from the gas reservoir 2 with hydrogen produced by the gas generator 5, it is possible to produce a process gas mixture with varying hydrogen percentages in the base gas. The hydrogen content of the process gas mixture may be adjusted for the bonding process gas.

Instead of supplying high purity gases from the gas reservoir to the bonding zone, a gas purifier may be added to the gas supply system. In order to purify the gas, for example to remove residual oxygen, the gas extracted from the gas reservoir is first supplied to a gas purifying unit, such as a dioxon purifier. The purified gas is then supplied to the bonding zone. As noted above, the purified gas may be directed to the bonding zone as a separate stream or along with the gas stream generated by the gas generator.

5 shows an example of such a system. Other devices of the present invention include a bonding zone 1, an on-site gas generator 5, a gas reservoir 2 and a di-oxo purifier 7. The use of the di-oxo purifier 7 makes it possible to use a gas reservoir 2 comprising a low purity gas, for example low purity nitrogen. The di-oxo purifier 7 removes residual oxygen from low purity nitrogen gas. The purified nitrogen gas is then directed to the bonding zone 1.

In addition, a purifier may be used to remove undesirable components from the gas produced by the gas generator. According to another preferred embodiment, a gas purifier, for example a di-oxo purifier, may be used to purify the gas produced by the gas generator and the gas supplied from the gas reservoir.

According to another embodiment of the present invention, two or three or more components of the process gas, preferably all components of the process gas, are produced by one or more gas generators. 6 shows such a device comprising a bonding zone 1 and two on-site gas generators 5, 8 and a di-oxo purifier 7. Except for the second on-site gas generator 8, all of the components shown in FIG. 6 are as shown in FIG. The second on-site gas generator 8 is, for example, a nitrogen generator 8 comprising an outlet pipe 4. At the point of connection of the pipe 4 and the pipe 9, the di-oxo purifier 7 may be integrated and clean both gases supplied by the pipe 4 and the pipe 9. The very clean process gas produced by the on-site gas generators 5, 8 is thus supplied through the pipe 3 to the bonding zone 1. According to this example of the invention, the gas reservoir is no longer needed.

Any of the embodiments of the invention described above may also be used to feed into multiple bonding zones. 8 shows an example of such a system. The system is shown in FIG. 3 except that there are three bonding zones 1a, 1b, 1c supplied with gas from the gas generator 5 and from the gas reservoir 2 instead of one bonding zone. Similar to the system

Claims (15)

A device for wire bonding comprising a guide for a bond wire and a melt induction device for melting the surface of a defined area of the bond wire surface, wherein the bond wire guide guides the limited area of the bond wire to the bonding zone 1. And wherein the bonding zone 1 is configured to connect to at least one bond pad, wherein the bonding zone 1 comprises a process gas inlet 3.
The process gas inlet 3 is connected to an on-site gas generator 5 which generates a process gas.
Device for wire bonding, characterized in that.
The method of claim 1,
Further comprising a gas purifier 7, preferably a di-oxo purifier, for purifying the process gas or a portion of the process gases 4, 9 prior to being directed to the bonding zone 1.
Device for wire bonding, characterized in that.
The method according to claim 1 or 2,
The second pipe 9 is connected to the same or different process gas inlet 3 to the bonding zone 1 and to the gas reservoir 2.
Device for wire bonding, characterized in that.
The method of claim 3, wherein
The first pipe 4 is connected to the second pipe 9 at a connection point upstream of the process gas inlet 3 of the bonding zone 1.
Device for wire bonding, characterized in that.
The method of claim 4, wherein
A mixer 6 located at the connection point
Device for wire bonding, characterized in that.
The method according to claim 4 or 5,
A dioxo purifier 7 is connected to at least one of the first and second pipes 4, 9 upstream of the process gas inlet 3 of the bonding zone 1.
Device for wire bonding, characterized in that.
The method according to any one of claims 1 to 6,
Including a second gas generator (8)
Device for wire bonding, characterized in that.
The method according to any one of claims 1 to 7,
The on-site generator is designed to produce less than 1000 l / h process gas, preferably less than 500 l / h process gas, more preferably less than 200 l / h process gas at standard conditions (STP).
Device for wire bonding, characterized in that.
A method of wire bonding comprising connecting a confined region of a bond wire to a bond pad, wherein the surface of the confined region is pre-melted and the entire process is made within a bonding zone 1 comprising a process gas, the process In a wire bonding method wherein a gas is introduced into the bonding zone prior to or during a bonding process,
At least a portion of the process gas is produced by the on-site gas generator 5
Wire bonding method, characterized in that.
The method of claim 9,
The process gas is mixed with a second gas supplied by the gas reservoir 2 or produced by the second on-site gas generator 8 and then introduced into the bonding zone 1.
Wire bonding method, characterized in that.
The method according to claim 9 or 10,
A dioxo purifier 7 is used upstream of the inlet 3 to the bonding zone to remove at least some of the components of the process gas or the oxygen content of the process gas.
Wire bonding method, characterized in that.
The method according to any one of claims 9 to 11,
Hydrogen-containing gas is generated by the gas generator 5
Wire bonding method, characterized in that.
The method according to any one of claims 9 to 12,
Nitrogen-containing gas is generated by the gas generator 5
Wire bonding method, characterized in that.
14. The method according to any one of claims 9 to 13,
At least one of the bond wires and bond pads is made of copper
Wire bonding method, characterized in that.
15. The method according to any one of claims 9 to 14,
Under standard conditions (STP), less than 1000 l / h process gas, preferably less than 500 l / h process gas, more preferably less than 200 l / h process gas is produced by the on-site generator
Wire bonding method, characterized in that.
KR20100095449A 2009-10-08 2010-09-30 Method and device for wire bonding KR20110038583A (en)

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MYPI20094226 2009-10-08
MYPI20094226 2009-10-08

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CN104057208A (en) * 2013-03-21 2014-09-24 吴宁 Multifunctional welding machine

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CN102034723A (en) 2011-04-27
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