TW201123503A - Solar cell and method of manufacturing the same - Google Patents

Abstract

The present invention relates to a solar cell and a method of manufacturing the same. The solar cell includes a substrate surface-treated to minimize solar reflectance; a quantum dot layer formed by vapor-depositing a thin film material on the surface of the substrate; a n-junction layer formed on the upper part of the quantum dot layer; an emitter formed in the n-junction layer and to which electric charges separated by the light incident to the quantum dot layer transmit; and an anti-reflection coating formed on the upper part of the n-junction layer and the emitter to prevent reflection of light. Therefore, when light passes through quantum dots formed in n-junction layer and multilayers, band gap energy from various regions may be generated, so that it allows separation of electric charges at various regions by the band gap energy and generation of electricity by such separated electric charges. Thus, the generation of electricity from the broad range of wavelengths in solar spectrums may be increased and it may allow manufacturing ultra-efficient solar cells.

Description

201123503 VI. Description of the Invention: [Technical Field of the Invention] [(10) 1] The present invention relates to a solar cell and a method of manufacturing the same, and more particularly to a solar cell using a wide solar spectrum to generate electric power and a method of manufacturing the same. [Prior Art] [0002] A solar cell is a semiconductor device that converts light energy into electrical energy. [0003] When light corresponding to the band gap energy of the solar cell material is absorbed into the battery, electric charges are generated, and the solar cells separate and collect these charges. [0004] A typical conventional solar cell consists of a single PN junction crystal. This type of solar cell cannot use all the spectrum to generate electric charge. Since this solar cell contains only one band gap energy, it can only use wavelengths in the long-wavelength region and the near-infrared wavelength region in the visible light spectrum. [0005] Therefore, a large number of solar cell development studies are currently underway. These studies combine materials of different band gap energies to obtain a wide range of charges from various wavelengths, rather than using only a single junction solar cell. SUMMARY OF THE INVENTION [0006] In view of the above problems of the prior art, it is an object of the present invention to provide a solar cell using a wide solar spectrum to generate electric power and a method of fabricating the same. In accordance with the purpose of the present invention, a solar cell is provided that includes a substrate that is treated to reduce the solar reflectance. A quantum dot layer is deposited by vapor phase and forms a thin film material on the surface of the substrate. One N junction layer 099127192 Form No. A0101 Page 4 of 65 201123503 is formed on the upper part of the quantum dot layer. An emitter is formed on the splicing surface layer, and a plurality of charges that are transmitted by the person that is transmitted to the quantum dot layer are transmitted to the emitter. - The anti-reflective light layer is formed on the upper part of the splicing surface layer and the emitter to prevent reflection first. [0009] [0011] wherein the 'quantum dot layer is formed in a multi-layered structure stacked by a quantum dot layer, the multilayer structure having different energy band gap energies. It causes the 'quantum dot layer to be produced by initially expanding a film material and the film material has an atomic size different from the matrix to the atomic island (4) (10) Μ - ). The thickness of each layer of the quantum dot layer is nanometer. Among them, the film f contains bismuth (Si〇2), nitrogen cut (SiNx), oxidized stone (S10), oxidized sulphate, oxidized town (10), acidified crane (SrTi〇3), oxidation group (%,) At least one of the composition of dioxin (τ'), gasification town (MgF2), zinc oxide (Ζη0), oxidized agaric (_, Shi Xi (Si). ❹[0012] According to the purpose of (4), The invention provides a method for manufacturing a solar cell, which comprises the steps of: preparing a substrate; treating the surface of the substrate to reduce the reflection coefficient of the human light on the surface of the substrate; forming a quantum dot layer, the quantum dot layer, by the gas phase Depositing a film material on the surface of the processing substrate; forming a -N junction layer on the quantum dot layer; forming an emitter layer formed by heat-treating the N junction layer; removing the monoacid salt glass, The scale silicate glass is formed on the leg layer when the emitter layer is formed; and the anti-reflective coating layer is formed on the N junction layer and the emitter layer. wherein the film material comprises dioxotomy (10) Correction (siN) 099127192 0993428504-0

Form No. A0101 Page 5 of 65 X

[0013] 201123503, oxidized stone Xi (Si〇), oxidized Ming (Al2〇3), oxidized town (MgO), titanic acid (SrTi03), oxidation group (, ~), titanium dioxide (1) ~), gasification town ( At least one of MgF2), zinc oxide (Zn〇), indium tin oxide (ITO), and 矽(s〇 composition) [0014] [0020] [0020] [0020] The step of forming the quantum dot layer is performed by stacking a multilayer structure of quantum dot layers having different energy band gap energies, wherein the step of forming the quantum dot layer is performed by initially expanding a thin film. The substance is produced, and the film material has an atomic size different from the matrix to the atomic island. The step of forming the quantum dot layer includes a layer of vapor deposited a film material. The layered structure, and the 8 hot 'gels: the vapor deposited film V1 - . . . - wherein the step of forming the quantum dot layer comprises sequentially vapor-depositing a film material in at least one layer structure And heat-treating at least one layer of vapor-deposited film material. wherein the amount is formed The step of layering comprises: forming a mask on the surface of the substrate. The mask has a hole having a diameter of 1 to 2 μm; through the hole, a film material is vapor-deposited on the substrate; and the film is removed. The film material is heat-treated after the masking, wherein each of the quantum dot layers has a thickness of 1 to 20 nm. wherein 'more includes the following steps: generating a selective emitter layer in or after forming the N junction layer. Another object of the present invention is to provide a solar cell comprising a 099127192 form number A0101 page 6 / a total of 65 pages 0993428504-0 201123503 matrix, the substrate surface is treated to reduce the solar reflectance. An N junction layer is formed in On the substrate, a plasmonic layer is composed of a plurality of metal particles and is formed on the upper portion of the N junction layer. An anti-reflection coating layer is formed on the upper portion of the plasmonic layer to prevent reflected light. [0022 Wherein the treatment of the surface of the substrate comprises weaving to form a surface texture layer on the surface of the substrate. [0023] wherein the metal particles of the electric sub-layer are dispersed over the entire surface of the N-junction. [0024] wherein the plasmonic sublayer comprises the metal particles, the metal particles having a tunneling region of 1 to 30 nm in diameter. [0025] wherein the plasmonic layer layer comprises the And a metal particle having a light diffraction region of 30 to 100 nm in diameter. [0026] wherein the metal particles of the plasmonic layer comprise a mesh pattern formed by a plurality of pores. ] , where the electric layer is ordered—the metal particle layer is in a mesh pattern, and the mesh pattern is coated with the metal particles having a thickness of up to 30 nm. [0028] wherein the metal particles comprise gold (Au), silver (Ag), copper (Cu), recorded (Ni), complex (Cr), iron (Fe), germanium (W), turn (Mo ), zinc (Zn) at least one of them. [0029] According to an object of the present invention, there is further provided a method of fabricating a solar cell comprising the steps of: preparing a substrate; treating a surface of the substrate to reduce a reflection coefficient of incident light on the surface of the substrate; removing a phosphonic acid Salt glass; forming a plasmonic layer consisting of a plurality of metal particles 099127192 Form No. A0101 Page 7 / Total 65 pages 0993428504-0 201123503 and formed on the upper portion of the N junction layer; An anti-reflective cover layer is formed. Wherein the step of treating the surface of the substrate comprises weaving to form a surface texture layer on the surface of the substrate. [0031] wherein the step of forming the plasmonic sublayer is to disperse the metal particles to form a metal particle layer. Wherein the step of forming the plasmonic sublayer uniformly disperses the metal particles having a diameter of from 1 to 30 nm. [0033] wherein the step of forming the plasmonic sublayer forms a metal particle layer in a mesh pattern formed by a plurality of pores. [0034] wherein the step of forming the plasmonic sublayer forms a metal particle layer in a mesh pattern, the mesh pattern being coated with the metal particles having a thickness of up to 30 nm. [0035] wherein the metal particles comprise gold (Au), silver (Ag), copper (Cu), niobium (Ni), chromium (Cr), iron (Fe), tungsten (W), molybdenum (Mo) And zinc (Zn) at least one of them. [0036] wherein a scanning sputtering gun is used to disperse the metal particles to form the plasma sub-layer, and one of the ejection unit areas has a particle density of 1013 to 1 〇17 atoms. [0037] In accordance with the purpose of the present invention, a solar cell is further provided that includes a substrate that is treated to reduce the solar reflectance. A photonic crystal layer having a periodically arranged lattice structure formed by etching the substrate. An N junction layer is formed on the upper portion of the substrate. 099127192 Form No. A0101 Page 8 of 65 201123503 A reflection-preventing cover is formed on top of the splicing surface to prevent reflection of light. [0040] [0044] [0045] wherein the treatment of the surface of the substrate comprises weaving to form a surface texture layer on the surface of the substrate. Wherein, the photonic crystal layer comprises a plurality of needle-shaped etching trenches, and the plurality of needle-shaped etching trenches are etched by the surface texture layer. The acicular portion of the acicular portion is 0. 1 to 2, wherein the acicular portion is 0. 1 to 2 Micron. Wherein, the surface texture layer has a plurality of tapered irregularities, and the tapered irregular portions have an interval of 4 to 10 micrometers. In accordance with the purpose of the present invention, a method of fabricating a solar cell is further provided comprising the steps of: preparing a substrate; treating the surface of the substrate to reduce the reflection coefficient of incident light on the surface of the substrate; forming a photonic crystal r - . a layer having a periodically arranged lattice structure, the lattice structure being formed by etching the substrate; forming an N junction layer on the substrate, and the photonic crystal layer is formed on the substrate; removing a phosphorus a tellurite glass; and forming an anti-reflective coating. Wherein the step of treating the surface of the substrate comprises weaving to form a surface texture layer on the surface of the substrate. Wherein the step of forming the photonic crystal layer comprises etching to form a plurality of acicular-shaped trenches. Among them, the etching step uses a reactive ion etching method and an induction couple 099127192 Form No. A0101 Page 9 / Total 65 page 0993428504-0 201123503 Combined plasma method. [0046] wherein the step of forming the photonic crystal layer comprises: coating a hardened photoresist and hardening; forming a mask pattern, the mask pattern having a plurality of pattern holes, the pattern holes and hardening Corresponding to the photonic crystal layer pattern on the type of photoresist; exposing the substrate by the patterning holes and etching the substrate; removing the mask pattern; and removing the mask pattern by diffusing phosphorus The matrix forms an N junction layer. [0047] wherein the step of forming the mask pattern comprises using an imprinting module to form the pattern holes in the substrate, the imprinting module having an irregular portion corresponding to the light C) sub-crystal layer pattern . 01至两个微米。 [0048] wherein the size of the mask is from 0.1 to 2 microns. [0049] wherein the step of etching the substrate is to emit an ion beam. [0050] wherein the etching step uses a reactive ion etching method and an inductive coupling plasma method. [0051] According to the purpose of the present invention, another solar cell is provided, which comprises a d

U matrix, which is treated to reduce the solar reflectance. a photonic crystal layer is formed on the surface of the substrate, and the photonic crystal layer is composed of a plurality of fine metal particles and a plurality of quantum wires formed at the bottom of the fine metal particles to reflect incident from the inside. Light. An N junction layer is formed on the photonic crystal layer. An anti-reflective coating layer is formed on the upper portion of the N junction layer to prevent reflected light. Wherein the treatment of the surface of the substrate comprises weaving to form a surface texture layer on the surface of the substrate. 0993428504-0 099127192 Form No. A0101 Page 10 / Total 65 Page 201123503 [0055] [0056] [0058] [0060] [0060] 099127192 Form Number Α 0101 where photonic crystal layer The quantum wires are in a needle-like state, and the quantum wires are formed by vapor deposition on the bottom of the metal particles. Wherein, the metal particles have a diameter of 5 to 50 nm. Wherein, the quantum wires have a length of 10 to 100 nm. According to another aspect of the present invention, a method of fabricating a solar cell includes the steps of: preparing a substrate; treating a surface of the substrate to reduce a reflection coefficient of incident light on the surface of the substrate; and forming a photonic crystal layer on the substrate a surface, and the photonic crystal layer is composed of a plurality of fine metal particles and a plurality of quantum wires formed at the bottom of the fine metal particles to reflect incident light from the inside; forming a splicing surface layer on the substrate And the photonic crystal layer is formed on the substrate; the monophosphorus phosphate glass is removed; and an anti-reflection coating layer is formed. Wherein the treatment of the surface of the substrate comprises weaving to form a surface texture layer on the surface of the substrate. Wherein the step of forming the photonic crystal layer comprises: forming a plurality of metal particles on the surface of the substrate to form the fine metal particles; and vapor deposition on the bottom of the fine metal particles and generating the quantum Line® wherein the step of forming fine metal particles is performed by scanning sputtering to disperse the metal particles, and the density of the metal particles per unit area is 1013 to 1017 atoms. In accordance with the purpose of the present invention, a solar cell is further provided which comprises a substrate which is treated to reduce the solar reflectance. A photon Page 11 of 65 0993428504-0 201123503 A crystal layer with a periodically arranged lattice structure formed by engraving the matrix. A quantum dot layer is deposited by vapor deposition and forms a thin film material on top of the photonic crystal layer. An N junction layer is formed on the upper portion of the quantum dot layer. A reflection preventing cover layer is formed on the upper portion of the N junction layer to prevent reflected light. [0061] wherein the solar cell further comprises a selective emitter layer on the N junction layer [0062] wherein the solar cell further comprises a plasmonic sublayer, the plasmonic sublayer is located at the upper portion of the N junction layer It consists of a plurality of metal particles. [0063] According to another aspect of the present invention, a method of fabricating a solar cell includes the steps of: preparing a substrate; treating a surface of the substrate to reduce a reflection coefficient of incident light on the surface of the substrate; forming a photonic crystal layer, And the photonic crystal layer has a periodically arranged lattice structure, the lattice structure is formed by etching the matrix; forming a quantum dot layer, which is deposited by vapor deposition, and forms a film substance on the upper portion of the photonic crystal layer Forming an N junction layer on the substrate, and the quantum dot layer is formed on the substrate; removing a phosphosilicate glass, the phosphonate glass is formed on the N junction layer; forming a shot a pole layer obtained by heat-treating the N junction layer; and forming an anti-reflection coating layer on the emitter layer. [0064] As such, when light passes through the quantum junction formed by the N junction layer and the plurality of layers, energy band gap energy from different regions may be generated, and therefore, each region can have band gap energy to separate charges, and these separated charges are generated. electric power. Therefore, the wide inclusion of the wavelength of the solar spectrum increases the power generated and enables the manufacture of ultra-efficient solar cells. 0993428504-0 099127192 Form No. A0101 Page 12 of 65 201123503 [0065] Other aspects and advantages of the present invention will be described in the following embodiments, and the above information is somewhat apparent in the embodiments, or via More understanding of the invention is practiced. [0066] While the present invention has been described with respect to the specific embodiments thereof, many modifications and changes may be made by those skilled in the art without departing from the invention. And its equivalent. Throughout the description of the present invention, appropriate embodiments will be omitted when it is stated that certain technologies are determined to avoid some of the points of the present invention. 〇[0067] When words like "first" and "second" are used to describe many different components, the component is by no means limited to the above vocabulary. The above vocabulary is only used to identify different components. . The vocabulary is used to describe certain embodiments and is only intended to be limited to the invention. In the present description, the expression "constituting" or "consisting of" is used to designate a feature, a number, a step, an operation, an element, a part or a combination thereof, and cannot be constructed to exclude The existence or possibility of any one or more other features, numbers, steps, operations, elements, parts or combinations thereof. [0069] Solar cells in accordance with certain embodiments of the present invention and methods of making the same will be described in greater detail below and with reference to the accompanying drawings, which are provided with the same reference numerals or And the redundant explanation is omitted. [0070] Please refer to FIG. 1 , which is a cross-sectional view of a solar cell embodiment according to the invention. 099127192 Form No. A0101 Page 13 of 65 0993428504-0 201123503. In the figure, a solar cell according to an embodiment of the invention has an electrode formed of a wafer type on a substrate ίο, and has a surface texture layer 12 to minimize solar reflection on the surface of the substrate 10. Further, the quantum dot layer 14 is formed on the upper portion of the surface texture layer 12, and is formed on the substrate 10 in a layered configuration. [0072] The quantum dot layer 14 is formed in at least one layer structure in accordance with an embodiment of the invention. [0073] For example, the quantum dot layer 14 is formed in a multilayer structure, each layer having a thickness of 1 to 20 nm. More preferably, the quantum dot layer 14 is formed in a five-layer structure with a total thickness ranging from 5 to 100 nm. [0075] The N junction layer 16 is formed over the quantum dot layer 14. [0076] The N junction layer 16 is formed by partial diffusion of phosphorus over the quantum dot layer 14 via a number of different methods. [0077] Here, since the substrate 10 is of a P type, a single PN junction is formed along the junction portion due to the N junction layer 16 , and the incidental light along the junction portion is ionized and separated. The electron-hole pair. [0078] Light that partially passes through the N junction layer 16 strikes the quantum dot layer 14 and further releases charge. [0079] When the quantum dot layer 14 is formed on a multilayer structure, each layer reacts only to a wavelength having a specific energy band gap energy to release the charge. [0080] An anti-reflection cover layer (ARC) 18 is formed on the upper portion of the N junction layer 16 099127192 Form No. A0101 Page 14 of 65 0993^201123503 Prevents reflection of light. [0081] Both sides of the substrate 10 are treated by laser so that both sides of the N junction layer 16 are electrically de-energized. [0082] The electrodes are disposed above and below the substrate 10 so that they can be electrically connected externally. Referring to FIG. 2, which is a flow chart of an embodiment of a solar cell method of the present invention, and FIG. 3 is a process diagram of an embodiment of a solar cell method of the present invention. As shown in FIGS. 2 and 3, a method of manufacturing a solar cell embodiment of the present invention includes preparing a wafer substrate 10 comprising ruthenium (S11). [0085] The surface of the wafer substrate 10 is then processed to minimize light reflection on the wafer substrate (S12). [0086] To achieve this, the surface of the wafer substrate 10 is first treated to eliminate damage, such as to eliminate jagged damage. Q [0087] The purpose of this treatment is to eliminate chip breakage or any impure material on the surface of the wafer substrate 10 when the wafer substrate 10 is cut. [0088] The surface texture layer 12 is then formed from the tissue wafer substrate 10. [0089] The surface texture layer 12 is formed to reduce the loss of surface reflection and to increase the absorption of light by storing light, and to reflect incident light by forming a pyramid or a reverse-angled, porous or irregular shape on the surface of the substrate 10 ( S12). [0090] The quantum dots are formed via a tissue process on a surface texture layer 12 formed on a substrate 10, where the quantum dots 14 are formed on at least one layer of the structure. 099127192 Form No. A0101 Page 15 / Total 65 Page 0993428504-0 201123503 [0091] [0093] [0099] [0099] [0099] [0099] Please refer to FIG. 4, which is a system A plan view of an embodiment of a solar cell method of the present invention is illustrated in which a (a) multi-layer quantum dot layer 14 and (1) a single-layer quantum dot layer 14 formed on a surface of a substrate on a solar cell, a quantum dot layer 14 may be formed as a multilayer structure as shown in Fig. 4 (a) or a single layer structure as shown in Fig. 4 (b). The multilayer quantum dot layer 14 according to an embodiment of the present invention is formed in accordance with the compositional properties of the substrate 1 and is formed into a film material. Such a multilayer quantum dot layer 14 is formed by stacking quantum dot layers having different energy band gap energies. f) Such a multi-layer quantum dot layer 14 may also be formed from a substrate, from 1 Å to an atomic island, to form a film having a different atomic size. In order to form the quantum dot layer 14 into a multilayer structure, the single-layer quantum dot layer is passed through The vapor deposition is stacked one by one, and the step of heat-treating the vapor-deposited film material is repeated. ' ' : ; rt :- ^ ΜΓ ::!: VII, h The quantum dot layer 14 is formed by repeating vapor deposition of a thin film material in at least one layer structure, and simultaneously heat-treating a vapor deposited thin film material layer, but the quantum dot layer 14 The formation of the quantum dot layer 14 can be vapor deposited by using an island growth mode, and the vapor deposited material includes, for example, carbonized hair (SiC), bismuth (si〇), oxidized 2 zinc (ZnO), and nanometer. A material of the class of nano-crystalline SiH. In island growth, the interaction between film materials plays a major role. According to this embodiment, the quantum dot layer 14 is formed by a layer in a multilayer structure. 099127192 Form No. A0101 Page 16 of 65 0993428504-0 201123503 Long mode or island growth mode is formed. [0100] Each layer of the quantum dot layer 14 is composed of a semiconductor nanocrystal having a quantum dot size of a de Broglie wavelength. According to the solar cell of one embodiment of the invention, the incident light on the quantum dot layer 14 reacts with the quantum dots of the respective layers to separate the charges and collect the separated charges, thereby generating electric energy. ❹ [0102] The relationship between the quantum dot size and the band gap energy of each layer of the quantum dot layer 14 is as shown in Equation 1, and the band gap energy is inversely proportional to the square of the quantum dot diameter. [雠] 1 ϊΓ2 Γ2 ~· * \ MqμΟ .. Equation 1 [0104] Here Eo is the optical band gap energy of the host ,, and D is the diameter of the crystal. [0105] According to Equation 1, the nanocrystals having a band gap energy of 2. 6 eV have an average diameter of 13 A.

Since the size of the quantum dots is related to the energy of the band gap energy and is referred to as the quantum size effect, the equivalent sub-points are formed in the multilayer structure, allowing light to be absorbed at many different wavelengths. According to this embodiment, quantum dots are present in the quantum excitation layer and this quantum excitation layer can be stacked below five layers. [0108] Each of the quantum excitation layers has a thickness of about 1 to 20 nm, and the total thickness of the five-layer quantum dot layer is about 5 to 100 nm (S13). [0109] The N junction layer 16 is formed after the quantum dot layer 14 (S14) is formed into a multilayer structure. 099127192 Form No. A0101 Page 17 / Total 65 Page 0993428504-0 201123503 [0110] The N junction layer 16 contains phosphating via use. The hydrogen (ρη3) decane (siH4) and chemical vapor deposition apparatus are formed as an N-type tantalum layer, and the n-junction layer 16 may be formed as a single layer or a plurality of layers. When the N junction layer 16 is formed into a single layer, phosphorus per unit volume is controlled within a range of 10 ι 6 - 2 atoms. On the other hand, when the N junction layer 16 is formed into a plurality of layers, it is necessary to increase the phosphorus content when the layer is formed from the bottom to the top. [0113] When the N junction layer 16 is filled, for example, containing phosphorus, it becomes a radiation layer, where the N^ junction layer 16 is formed into a multilayer structure, and each layer of the structure has a different amount of phosphorus, for example, when the structure is from the bottom to At the top, the number is 1〇16 to 1018, and to 1〇20 cubic centimeters. [0114] After the N junction layer 16 is formed, a selective emitter layer 17 is further formed to enhance the ability to collect electrons (S15). According to this embodiment, the selective emitter layer locally injects energy via the laser beam. The shape is reduced and can occur when the N junction layer 16 is formed or formed. Just prior to the details, the pentoxide layer (pre-vapor deposition) consists of a high temperature trioxo oxychloride disk (P0C13) and oxygen ( 〇 2) The reaction, and the disc (P) of the bismuth pentoxide (P2〇5) skin is heat-treated at a high temperature to transfer and diffuse to Si Xi to form a radiation layer. [The radiation layer generates potential energy to simplify the transfer of separated charge to the N layer. According to this embodiment, the selective emitter layer 17 is formed by partial laser irradiation at the radiation 1' or by diffusion of the portions of the substrate 1 by heating and laser irradiation. 099127192 Form No. A0101 Page 18 of 65 0993428504-0 201123503 [0118] Before the selective emitter layer 17 is formed using a laser, a high concentration p material layer can be formed by printing at the point where the laser is used. The formation of the selective emitter layer 17 is accelerated. [Oil9] Atoms diffuse from a high concentration to a low concentration in the solid state until the atom becomes a uniform concentration from an uneven concentration under heating conditions. [0120] The diffusion phenomenon can be expressed by Equation 2, which occurs in response to the gradient of the response concentration in accordance with the first Fick (s) law of diffusion. 〇 [0121]

J n^c Sx .. Equation 2 [0122] Further, the divergence coefficient D increases rapidly as the temperature increases, and this function is expressed in Equation 3: .. Equation 3

[0123] An I £} = ^ [0124] Here D is a constant that is not affected by temperature, T is temperature, and Q in the exponential function is excitation energy and is about 2 to 5 eV depending on the material. [0125] For example, when Q=2eV and Do=8xl〇-V/sec, if T=3〇〇K, D is about 1 (T38m2/Sec, if D is τ = 15〇〇κ, D increases rapidly. Up to about 10 1 Wsec. [0126] Phosphorus Siiicate glass (PSG) is removed when the matrix 1 is performing the diffusion process. The gallate glass contains phosphorus oxyphosphorus (,) A wall that reacts with oxygen during the diffusion process and contains impurities in the stone eve, so the phosphate silicate glass should be removed after the splicing surface layer 16 is formed (S16). 099127192 Form No. A0101 Page 19/ A total of 65 pages 0993428504-0 201123503 [0128] The anti-reflection cover layer 18 is formed on the substrate 10 when the N layer is formed, and the formation of the reflective cover layer 18 is prevented by plasma enhanced chemical vapor deposition instruments or sprays. The sputtering apparatus (S17) reaches the vapor deposition of tantalum nitride (SiNx). [0129] Since the substrate 10 is connected to the surfaces of all the N layers, the substrate 10 can generate grooves on both sides to cut off electricity. Formed on the bottom and top end portions of the substrate 10 as an external electrical connection. [0131] Please refer to FIG. 5 for reference to another invention. A cross-sectional view of a battery cell embodiment. [0132] The solar cell of the present invention, as shown in FIG. 5, includes a substrate 10 prepared in the form of a wafer, and a surface texture layer 12 is formed on the surface of the substrate 10 to minimize Reflection of Solar Energy [0133] The composition of the matrix is a P-type crystal and the N junction layer 54 is formed by diffusion of phosphorus. [0134] The plasmonic sub-layer 56 is formed on the surface of the PN junction. [0135] According to an embodiment, electricity The slurry layer 56 is formed by spraying nano silver (Ag) particles, and y can also be sprayed with gold (Au), silver (Ag), copper (Cu), recorded (Ni), complex (Cr), iron (Fe), The mixture of tungsten (W), molybdenum (Mo), zinc (Zn) or its nanoparticles forms the plasmonic layer 56, but is not limited thereto. [0136] The plasmonic layer 56 has a small electromagnetic upon light incidence. Interference phenomenon, light incident on the metal surface generates waves through the interference phenomenon, and the incident light thereby vibrates the particles to efficiently scatter the light. [0137] Here, when the incident light has a specific resonance color, the scattered light will Interference and partial overlap to provide better scattering. 099127192 Forms A0101 Page 20 of 65 0993428504-0 201123503 [0138] The anti-reflective cover layer 18 is formed to prevent reflection of solar energy in a portion above the plasmonic layer 56. [0139] The trench 19 is then formed on both sides of the substrate 10 to The electricity is turned off, and then the electrodes 20, 22 are formed on the lower portion and the upper portion of the substrate 10. [0140] Please refer to FIG. 6 , which is a description of a plasmonic layer according to another embodiment of the present invention. [0141] FIG. 6( a ) shows that the plasmonic layer 56 can be uniformly sprayed with metal nanoparticles. 16a is formed. According to this embodiment, the metal nanoparticle 16a has a diameter of about 1 to 30 nm in the tunneling region. According to this embodiment, the metal nanoparticles 16a have a diameter of about 30 to 100 nm in the light diffraction region. [0144] Referring to Fig. 7, which is a plan view showing an embodiment of a plasmonic layer formed by a sputtering method in a solar cell of the present invention. The splatter method includes splattering 30 to spray metal particles and modules (not shown) to move the solar substrate 10 ❹ or splatter 30. [0145] The spray gun 30 sprays a fixed amount of metal particles on the substrate, and the number of metal particles sprayed on the surface of the substrate can be changed by the shape of the splash 30, the movement speed of the splash 30, and the splash 30 The distance from the substrate 10, the current used for the splash 30, the pressure of the processing gas, etc. are changed. [0146] According to this embodiment, when the metal particles forming the plasmonic sublayer are sputtered by the sputtering process, about 1013 to 1017 atoms per unit area on the substrate 10 are 099127192. Form No. A0101 Page 21 of 65 0993428504-0 201123503 [0147] In Fig. 6(b), the plasmonic sub-layer 56 is formed in a mesh form and a plurality of holes 16c as a metal particle layer 16b. [0148] According to this embodiment, the metal particle layer 16b may have a thickness of 30 nm or less to provide a light tunnel. [0149] When the plasmonic sub-layer 56 is formed of the sputtered metal particles on the substrate 10, the reflective cover layer 18 is prevented from being formed to prevent reflection of light. Further, the groove 19 is formed on both sides of the substrate 10 by de-energizing the N-junction layer 54 using a laser. [0151] The electrodes 20, 22 are formed on the bottom of the substrate 10 and are externally electronically coupled to the top surface portion. Please refer to FIG. 8, which is a flow chart of another embodiment of the method for fabricating a solar cell of the present invention. Please refer to Fig. 9, which is a process diagram of another embodiment of the solar cell manufacturing method of the present invention. As shown in FIGS. 8 and 9, the solar cell manufacturing method according to the present embodiment includes preparing a wafer substrate 10 containing germanium (S11). [0154] The surface of the substrate 10 is treated to minimize reflection of incident light from the surface of the substrate (S1 2). [0155] For this purpose, the surface of the wafer substrate 10 is first treated to eliminate damage, such as the removal of sawtooth damage. [0156] This treatment is for eliminating debris cracks generated when the wafer substrate 10 is cut, or any impurities on the surface of the wafer substrate 10. [0157] The surface texture layer 12 is then formed on the texture of the wafer substrate 10, surface grain 099127192 Form No. A0101, page 22 / total 65 pages 201123503 2 &ι; into low surface reflection loss and to store light to increase light : Absorption # is formed by forming a pyramid or a contralateral cone, perhaps a porous hole or forming an irregular shape on the surface of the base to reflect human light (S12). _] The N junction layer 94 is formed of a (1) layer by an N type by using a chemical vapor deposition apparatus (S13) and (IV) (SiH4) containing Wei hydrogen (10) 3). When the diffusion program on the substrate 1 is executed, the initial acid salt glass _ is removed. Just-salt glass is a gas containing a monument, which is produced by the reaction between the three gas oxygen scales (cis 3) and oxygen in the diffusion process, and contains the impurities in the dream, so the time is broken at N The junction layer 94 is formed (S14) and removed. After the bismuth (iv) silicate glass is removed, the ohmic layer 96 is formed on the upper portion of the N junction layer 94. [_The plasmonic layer 96 is sprayed with metal nanoparticles by using _grab-moving substrate 1D or at a fixed moving rate." Just in each (four) accumulation of money 1 () 13_17 gold > 1 particles are money in the matrix 10 is formed to form the plasmonic layer 96 (S15). After the rounded good layer 96 is formed on the substrate H), the reflective cover layer 18 is prevented from being formed to prevent reflection of light. [0166] 099127192 The anti-reflection coating layer 18 may be formed by vapor deposition of a nitride (SiNx) & electropolymerization enhanced chemical vapor deposition method or a sputtering method (S16). Since the substrate 10 is connected to all surfaces by the N layer, it can be de-energized on both sides of the substrate 10 by the creation of the grooves 19. Form No. A0101 Page 23/Total 65 100 M 0993428504-0 201123503 [0167] The electrode is formed at the bottom and the top end portion of the substrate 10 to provide an external electrical connection (S17). [0168] Please refer to Fig. 10, which is a cross-sectional view showing another embodiment of the solar cell method of the present invention. As shown in FIG. 10, the solar cell of the embodiment of the invention is formed in the form of a wafer on the substrate 10, and the surface texture layer 12 is formed to minimize the reflection of solar energy on the surface of the substrate 10. [0170] The photonic crystal layer 104 has a periodically arranged lattice structure formed by the etching substrate 10. [0171] Photonic crystal layer 104 prevents incident light from being reflected to the outside and provides sustained external reflection to enhance incident light. [0172] Photonic crystal layer 104 may comprise a plurality of acicular etched trenches formed by etched surface texture layer 12. [0173] The N junction layer 16 is formed of phosphorus diffused over the needle-shaped etched trenches. [0174] Here, since the substrate 10 is of a P-type, since the N-junction layer 16 is formed by diffusion of phosphorus in many different ways, a single-layer PN junction layer is formed along the junction portion, and incident light along the junction portion Generate ionized and separated pairs of holes. [0175] The anti-reflection cover layer 18 is formed on the top end portion of the N junction layer 16 to prevent reflection of light. [0176] The grooves on both sides of the substrate are formed to be electrically disconnected, and the electrodes 20, 22 are mounted to the bottom and top portions of the substrate 10. [0177] Please refer to FIG. 11 , which is a solar cell manufacturing method of the present invention. 099127192 Form No. A0101 Page 24 of 65 0993428504-0 201123503 Flow chart of the embodiment. Please refer to Fig. 12, which is a process diagram of another embodiment of the solar cell manufacturing method of the present invention. [0178] The solar cell manufacturing method of the embodiment shown in Figs. 11 and 12 includes preparing a wafer substrate 10 containing ruthenium (S11). [0179] The surface of the wafer substrate 10 is treated to minimize reflection of incident light at the surface of the substrate. [0180] For this purpose, the surface of the wafer substrate 10 is first treated to eliminate damage, such as the removal of sawtooth damage.此 [0181] This treatment is to eliminate debris cracks generated when the wafer substrate 10 is cut, or any impurities on the surface of the wafer substrate 10. [0182] The surface texture layer 12 is formed on the wafer substrate 10 by texturing the wafer substrate 10. [0183] The surface texture layer 12 is then formed to reduce surface reflection loss and to store light to increase absorption of light by forming a pyramid or a conical pyramid, perhaps a porous hole or forming an irregular shape on the surface of the substrate 10 to reflect incident light. (S1 2).

The Q photonic crystal layer 104 has a periodically arranged lattice structure formed by the etching substrate 10 after the surface texture layer 12 is formed. [0184] The photonic crystal layer 104 is formed on the surface texture layer 12. [0185] The photonic crystal layer 104 prevents incident light from being reflected to the outside and provides continuous external reflection to enhance incident light. [0186] The photonic crystal layer 104 is composed of fine metal particles 14a (as shown in FIG. 14) and quantum wires 14b (shown in FIG. 14), and a quantum wire 14b (formed in the lower portion of the fine metal particles 14a. 099127192 A0101 Page 25 of 65 pages 0993428504-0 201123503 [0187] The photonic crystal layer 104 is formed by spraying a fine metal particle Ua on a scanning surface of the surface texture layer 12 which is lifted on the substrate 12. The method achieves a particle density of about 1 〇 13 to 1 〇 17 atoms per unit area. The photonic crystal layer 104 is formed by etching the surface texture layer 12 by high-density ion etching to form a needle-shaped etching groove.咼 咼 离子 019 019 019 019 019 019 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 咼 离子 离子 离子 离子 离子 离子 离子 离子 离子 离子 离子 离子 离子 离子 离子 离子 离子 离子 离子 离子 离子 离子 离子 离子 离子 离子 离子 离子 离子 离子 离子 离子 离子 离子 离子 离子 离子The inductive coupled plasma (ICP) method is performed. The program gas of the high-density ion remnant method may be sulfur hexafluoride (S6), oxygen (02), gas (C12), nitrogen (N2) and the like. And the program pressure is 10_2 to 1 Torr (Τ〇ι·ι〇. Needle etching) The grooves are formed by high-density ion etching on the surface texture layer 12 and the needle-shaped etched trenches have an etching pattern of 3 Å to 2 Å nanometers and a lattice period of 1 to 2 μm. According to this embodiment The photonic crystal layer 104 is formed by a high-melting ion etching method, which can also be formed by many other methods not limited thereto. For example, the photonic crystal layer 1〇4 can be formed by a nano-imprint method as shown in FIG. Referring to Fig. 13, which is a process diagram of another embodiment of the solar cell manufacturing method of the present invention, the use of the nano-imprint method is described. As shown in Fig. 13, the wafer substrate 11 is prepared. A good flaw, and the surface texture layer is formed on the wafer substrate by the matrix texture. After the surface texture layer is formed, the photonic crystal layer is then formed by the nano-imprint method number A0101 page 26/65 pages 0993428504-0 [0196 ] 201123503 is formed. [0197] The hardened photoresist 11 3 covers the surface of the substrate 110 and hardens as a result. The hardened photoresist 113 may be optical impedance or electrical impedance. [0198] The pattern hole 113 a is made of nanometer Comparison of imprinting mold 116 1至两纳米, and the hole of the irregularity of the pattern 11 of the photonic crystal layer is formed on the photoresist 11 of the substrate 11 ,, the crystal period of the irregular part 11 6a on the nano-printing mold is 0.1 to 2 nm, and the hole The diameter is 30 to 200 nm. [0199] The photoresist 113 has a pattern hole 113a functioning as a nano mask to expose a portion of the substrate 11G with respect to the pattern of the photonic crystal layer. [0200] The substrate 110 is etched by ion beam, where a portion of the substrate 110 is exposed by the pattern holes 113a and etched by the ion beam. [0201] Ion lithography is performed by a reactive ion etching (RIE) method or an inductive coupled plasma (ICP) method. [0202] The program gas of the 离子 ion characterization method can be 'sulphur hexafluoride (S6), oxygen (op, gas (ci2), nitrogen (ν2) and the like, and the program pressure is ι〇-2 to 1 Torr. Ear (Torr) [0203] When the residual program is completed, the photoresist 113, which is a nano-mask, is removed with, for example, a propylene mesh. [0204] When a photonic crystal layer having a plurality of etched trenches is formed The N junction layer 116 is formed by diffusing phosphorus on the surface. [0205] Referring again to FIGS. 11 and 12, the N junction layer 16 is formed by using a chemical vapor deposition 099127192 device and containing arsenic phosphide (PH3). The decane (SiH4), formed as an N-type form number A0101, page 27, a total of 65 pages, 0993428504-0, 201123503 [0206] [0208] [0209] [0210] [0212] [0213] 0214] 矽(Si) layer (S14). Phosphite glass (PSG) is removed when the diffusion procedure on substrate 10 is performed. Disc silicate glass is a filled oxide containing The reaction between the phosphorus oxyphosphorus (P0C13) and the oxygen in the diffusion process of the N junction layer 16 is generated, and contains impurities present in the ruthenium, so the phosphonate is destroyed at the N junction. The surface layer 16 is removed after being formed (S15). After the substrate 1 is formed into an N layer, an anti-reflection coating layer 18 is formed. The anti-reflection coating layer 18 can be strengthened by vapor deposition of tantalum nitride (SiNx) by plasma addition. Formed by vapor deposition or sputtering. (4) The substrate 10 is connected to the surface by the N layer. It can be electrically disconnected on both sides of the substrate 10 by using the laser to generate the trench 19. The electrodes 20, 22 are formed on the substrate. The bottom and the top portion of the 1 提供 provide an external electrical connection (S17). Please refer to Fig. 14, which is a cross-sectional view of another embodiment of the solar cell method of the present invention. 0 In Fig. 14, one of the inventions of the solar cell Embodiments include electrodes on a wafer substrate and a surface texture layer 12 is formed to minimize reflection of solar energy on the surface of the substrate 10. The surface texture layer 12 is formed in a pyramidal configuration having a spacing of about 4 to 12 nanometers. Photonic Crystal Layer 104 is formed on the surface texture layer 12. 099127192 Form No. A0101 Page 28 / Total 65 Page 0993428504-0 201123503 [0215] The photonic crystal layer 104 prevents incident light from being reflected to the outside and provides continuous external reflection to enhance incident light. 0216] The sub-crystal layer 104 is composed of fine metal particles 14a and quantum wires 14b, and the quantum wires 14b are formed under the fine metal particles 14a. [0217] The photonic crystal layer 104 is formed by spraying the fine metal particles 14a on the substrate 10. The scanning of the formed surface texture layer 12 is achieved by spraying, and the particle density per unit area is about 1013 to 1017 atoms. [0218] In accordance with this embodiment, a sputtering method as illustrated in FIG. 7 depicts a plan view of a scanning splattering method including splattering 30 to spray metal particles and a module not shown to move the solar cell substrate 10 Or splatter grab 30. [0219] The splashing 30 splashes a fixed amount of metal particles on the surface of the substrate, and the number of metal particles sprayed on the surface of the substrate can be splattered by the shape of the splash 30, the moving speed of the spray gun 30, and the splashing. The distance between 30 and the substrate 10, the current used by the spray gun 30, the pressure of the process gas, etc. are changed. [0220] The fine metal particles 14a have a size of about 5 to 50 nm. According to this embodiment, the metal of the fine metal particles may be gold (Au), silver (Ag), copper (Cu), nickel (Ni), chromium (Cr), iron (Fe), crane (W). , Shao (Mo), or zinc (Zn) ... and so on. The ruthenium particles are diffused by vapor deposition by a chemical vapor deposition apparatus and grown in a lower portion of the fine metal particles 14a to have a low binding energy to the quantum wires 14b. [0223] The quantum wires 14b are formed to have a length of about 10 to 100 nm. [0224] When the ruthenium particles are grown on the surface texture layer 12 on the substrate 10, the fine metal 099127192 Form No. A0101 Page 29. Total 65 Page 0993428504-0 201123503 The particle 14a is transformed into the upper portion. [0225] The fine metal particles 14 a vibrate the incident light with a plasmon effect to scatter the light, and the scattered light is enhanced by the resonance increasing the scattering effect. [0227] Here, when the incident light has a specific resonance color, the scattered light interferes with each other and produces a partially overlapping image to provide a better scattering effect. The N junction layer 146 is formed by diffusing phosphorus on the quantum dot layer 14, and is composed of fine metal particles 14a and quantum wires 14b. [0229] Here, since the substrate 10 is a P-type 'single p_N junction formed by a portion of the junction due to the N junction layer 146, and diffused by a plurality of different ways to form a 'bridged junction' The person in the face portion first produces a hetero and a separate pair of electron-hole pairs. "III: * The anti-reflection cover layer 18 is formed on the top end portion of the N junction layer 146 to prevent reflection of light. [0231] The double-sided groove on the substrate is formed to be disconnected from electricity, i 22 is installed at the bottom of the substrate 10 and the part of the Kanzaki. .... 丨... Please refer to Fig. 15, which is a flow chart of another embodiment of the solar cell manufacturing method of the present invention, please refer to Fig. 16 It is a process diagram of another embodiment of the solar cell manufacturing method of the present invention.

[0232] As shown in FIGS. 15 and 16, the solar cell manufacturing method of the presently exemplified embodiment includes preparing a wafer substrate 10 (S(1)) containing the stone eve. [0233] The surface of the wafer substrate 10 is processed by the county, To minimize the incident light on the base zero. 099127192 Form No. A0101 Page 30 / Total 65 Page 0993428504-0 201123503 [0234] [0236] [0237] [0238] [0239] [ 0240] [0242] [0243] For this purpose, the surface of the wafer substrate 1 is first treated to eliminate the damage, such as the removal of sawtooth damage. This process is to eliminate the occurrence of wafer substrate 10 when it is cut. Fragmentation of the fragments, or any impurities on the surface of the wafer substrate 10. The surface texture layer 12 is formed by the textured wafer substrate 10 on the wafer substrate. The surface texture layer 12 is formed to reduce surface reflection loss and to store light by Increasing the absorption of light, after forming a pyramid or a conical taper, perhaps a porous hole or forming an irregular shape on the surface of the substrate 10 to reflect the incident light (S12) surface texture layer 12, the photonic crystal layer 14 is then salty. Photonic crystal Before the formation of 14, the fine metal particles 14a are squirted on the surface of the surface texture layer 12. The fine metal particles 14a are sprayed by a spray gun 30# moving substrate: 1 〇 or splatter 3 〇 spray at a fixed moving rate (S13) « The ruthenium particles are diffused by a chemical vapor deposition apparatus and grown on the fine metal particles 14a to the lower portion of the quantum wire 14b, while the fine metal particles act as a catalyst. Therefore, the diffused ruthenium is further vapor-deposited and grown on The lower portion of the fine metal particles 14a has a low binding energy to the quantum wires 14b, and the longer the quantum wires 14b grow, the larger the fine metal particles. The quantum wires 14b are most suitable for growth to a length of 1 〇 to 1 〇〇. The range of the nanometer (S14) 〇 099127192 Form No. A0101 Page 31 / Total 65 page 0993428504-0 201123503 [0244] The N junction layer 16 is formed by diffusing fluorescence through the photonic crystal layer. It is composed of fine metal particles and quantum wires. [0245] The N junction layer 16 is formed as an n-type Si layer by using decane (SiH4) containing phosphine (PH3) and a chemical vapor deposition device (S15). 0246] in The diffusion procedure is performed on the substrate 1 and the phosphosilicate glass (PSG) is removed. [0247] The phosphonium glass is an oxide containing tris (P〇Cl3) and oxygen in the diffusion process. The inter-reaction is impeded and contains impurities in the crucible, so the phosphonate glass should be removed after the N-junction layer 16 is formed (s16). 〆 , f " ^ [0248] The anti-reflection coating layer 18 is formed on the N layer of the base-poor shape. [0249] The anti-reflection coating layer 18 may be formed by gas phase deposition: nitriding CSi: Nx) by plasma enhanced chemical vapor deposition or sputtering (S17). [0250] Since the substrate 10 is connected to all surfaces by the N layer, it can be electrically disconnected from both sides of the substrate 1 by using the laser generating trench 19. [0251] The electrodes 20, 22 are formed at the bottom and the top of the substrate 10 An external electrical connection is provided in part (S18). Please refer to Fig. 17, which is a cross-sectional view showing another embodiment of the solar cell method of the present invention. A solar cell according to an embodiment of the invention is shown in Fig. 17. The electrode and surface texture layer 2 on the wafer substrate 10 are formed to minimize the reflection of solar energy on the surface of the substrate 10. [0254] The surface texture layer 12 is formed by a pyramidal structure having an interval of about 4 to 10 nm by 099127192 Form No. A0101 Page 32 of 65 pages 0993428504-0 201123503. [0255] Photonic crystal layer 14 is deposited on surface layer 12. [0256] Photonic crystal layer 14 prevents incident boundary reflections to enhance incident light. External, and providing a continuous outer [0257] Photonic crystal layer 104 may comprise a plurality of acicular etched trenches. The 量子 quantum dot layer 14 formed by the surface texture layer 12 is formed into a layered structure after being formed on the surface texture layer 丨2. Part of the photonic crystal layer 104 shape [0259] According to this embodiment, the quantum dot layer 14 is humiliated to the structure of the umbrella layer. [0260] For example, the quantum dot layer 14 may be formed into a layer structure, and each layer has a thickness of 1 to 20 nm. ^ a"Ping Han [0261] Preferably, the quantum dot layer 14 may be formed as a η The five-layer structure of the horse has a total thickness of 5 to 100 nanometers. 026; Κ 1 ϋ ϋ ? % ί""^ ::.:yf When a quantum dot layer is formed on a multilayer structure in accordance with an embodiment of the present invention, each layer will have a specific energy band of phase S The amount of wavelength reacts to release the charge. The photonic crystal layer can be formed stepwise above the quantum dot layer 14 just in accordance with this embodiment. The N junction layer 16 is formed on the upper portion of the quantum dot. _] The N junction layer 16 is formed by diffusing and filling a portion of the quantum dot layer (4) in a plurality of ways, and is composed of a fine metal plate 14a and a quantum wire Ub. Immediately here, since the matrix is a P-type 'single-P_N junction, which is formed along the junction portion due to the junction layer 16, the incident along the junction portion is 099127192. Form No. A0101 Page 33 / 65 0993428504 -0 201123503 Light produces ionized and separated electron-hole pairs. [0266] Light that partially passes through the N junction layer 16 strikes the quantum dot layer 14 and discharges charge. [0267] The plasmonic sub-layer 170 is then formed on the surface of the N-junction layer 16. [0268] According to an embodiment, the plasmonic sub-layer 170 is formed by spraying nano-silver (Ag) particles, and the plasmonic sub-layer 170 may also be etched with gold (Au), silver (Ag), copper (Cu), recorded ( A mixture of Ni), chromium (Cr), iron (Fe), tungsten (W), molybdenum (Mo), zinc (Zn) or its nanoparticles forms a plasma sub-layer 170, but is not limited thereto only [0269] The plasmonic sub-layer 170 has a small electromagnetic interference phenomenon when light is incident, and light incident on the metal surface generates a wave via an interference phenomenon, and the incident light thereby vibrates the particles to efficiently scatter light. [0270] Here, when the incident light has a specific resonance color, the scattered light interferes with each other and generates a partial overlap phenomenon to provide a better scattering effect. [0271] The plasmonic sub-layer 170 is formed by uniformly spraying metal nanoparticles. [0272] According to this embodiment, the metal particles have a diameter of about 1 to 30 nm in the tunneling region. [0273] According to this embodiment, the metal nanoparticle 16a has a diameter of about 30 to 100 nm in the light scattering region. Referring to FIG. 7, which is a plan view showing an embodiment of a plasmonic layer formed by a sputtering method in a solar cell of the present invention. The splatter method includes splattering 30 to sputter metal particles and modules (not shown) to move the solar substrate 10 or splatter 30. 099127192 Form No. A0101 Page 34 of 65 0993^ 201123503 [0275] [0276] Splashing 30 Splashes a fixed amount of metal particles onto the substrate, and the number of metal particles spattered on the surface of the substrate can be sputtered. Grab the shape of the 3 、, the movement speed of the splatter 30, the distance between the splatter 3 and the substrate 1 , the current used for the splash 30, the pressure of the processing gas, etc. According to this embodiment, when the metal particles forming the plasmonic sublayer are ejected by the splattering process, about 1 〇 3 to 1 〇 17 atoms per unit area on the substrate 10 [0277] Ο [0278] [0279 [0280] [0282] The plasmonic sub-layer 170 is formed in a mesh form and a plurality of pores as a metal particle layer. According to this embodiment, the metal particle layer may have a thickness of 30 nm or less to provide a light channel. . An anti-reflection coating layer 18 is formed on the upper portion of the plasmonic sub-layer 20 to prevent reflection of light. Further, the trench 24 is formed on both sides of the substrate 1 彳吏 by the laser to turn off the 'electrode 26, 28 formed: the substrate 1 (the bottom and the top portion of the K are externally electronically connected. i , see Figure 18 is a flow chart showing another embodiment of the solar cell manufacturing method of the present invention. Please refer to Fig. 19, which is a process diagram of another embodiment of the solar cell manufacturing method of the present invention. And Fig. 21 is an embodiment of the solar cell manufacturing method of the present invention, comprising preparing a substrate 10 (S11) comprising a Si wafer. [0283] The surface of the wafer substrate 1 is then processed to minimize Light reflection on the wafer substrate (S12) 099127192 Form No. A0101 Page 35 / Total 65 pages 0993428504-0 201123503 [0284] To achieve this, the surface of the wafer substrate 10 is first treated to eliminate damage, such as anti-aliasing The purpose of this process is to eliminate chip breakage or any impure material on the surface of the wafer substrate 10 when the wafer substrate 10 is cut. [0286] The surface texture layer 12 is then formed from the tissue wafer substrate 10. 0287] The surface texture layer 12 is formed to reduce the loss of surface reflection and to increase the absorption of light by storing light. The incident light can be reflected by forming a pyramid or a reverse-angled, porous or irregular type on the surface of the substrate 10.. (S12) [0288] After the surface texture layer 12 is formed, the photonic crystal layer 104 is subsequently formed. [0289] The photonic crystal layer 1 〇4 is formed by etching the surface texture layer 12 by high-density Huazi etching to form a needle shape. The trench is etched. [0290] The high-density ion etching method can be performed by a reactive ion etching method or an inductively coupled plasma method. [0291] The program gas of the high-density ion etching method can be sulfur hexafluoride (S6) or oxygen (〇). 2), gas (ci2), nitrogen (n2) and the like, and the program pressure is 1 (Γ2 to 1 Torr) [0292] The needle-shaped etched trench is made of high density on the surface texture layer 12. Ion etching forms 'and the acicular-shaped trench has an etching pattern of 30 to 200 nm and a lattice period of 0.1 to 2 μm. [0293] According to this embodiment, the photonic crystal layer 1〇4 is high. Density ion etching forms 'it can also be used without limitation A number of other methods are formed. 099127192 Form No. A0101 Page 36 / Total 65 Page 0993428504-0 201123503 [0294] For example, the photonic crystal layer 104 can be formed by a nanoimprint method as shown in Fig. 13. [0295] Photonic crystal layer 14 is formed on the surface texture layer 12 and the quantum dot layer 16, and the quantum dot layer 16 may be formed in at least one layer structure. [0296] The multilayer quantum dot layer 14 according to an embodiment of the present invention is formed according to the compositional properties of the matrix 10, And formed into a film material. [0297] Such a multilayer quantum dot layer 16 is formed by stacking quantum dot layers having different energy band gap energies. [0298] Such a multilayer quantum dot layer 14 can also be formed by forming a film material having a different atomic size from the substrate 10 to an atomic island. [0299] In order to form the quantum dot layer 14 into a multilayer structure, a single-layer quantum dot layer is stacked one by one via vapor deposition, and the step of heat-treating the vapor-deposited thin film substance is repeated. The quantum dot layer 14 is formed by repeating the vapor deposition of a thin film material in at least one layer and simultaneously heat-treating the vapor deposited thin film material layer, but the formation of the amount of the germanium dot layer 14 is not limited thereto. [0301] The quantum dot layer 14 may be vapor deposited by using an island growth mode, and the vapor deposition material includes, for example, tantalum carbide (SiC), germanium dioxide (Si〇2), zinc oxide (ZnO), and nanocrystalline crystal. A material of the nano-crystalline Si-H type. [0302] In island growth, the interaction between film materials predominates to form the quantum dot layer 16. [0303] According to this embodiment, the quantum dot layer 14 is formed by one layer in a multilayer structure. 099127192 Form No. A0101 Page 37 of 65 0993428504-0 201123503 Long mode or island growth mode is formed. [0304] Each layer of the quantum dot layer 14 is composed of a semiconductor nanocrystal having a quantum dot size of a de Broglie wavelength. [0305] The photonic crystal layer is further formed on the quantum dot layer 14. [0306] The N junction layer 16 is then formed. [0307] The N junction layer 16 is formed into an N-type bismuth (Si) layer by using a chemical vapor deposition apparatus (S13) and decane (SiH4) containing phosphine (PH3). The N junction layer 16 may be formed as a single layer or a plurality of layers. When the N junction layer 16 forms a single layer, the filling per unit volume is controlled in the range of 1016-21 atoms. On the other hand, when the N junction layer 16 is formed into a plurality of layers, it is necessary to increase the amount of breakage when the layer is formed from the bottom to the top (S15). [0310] The plasmonic sub-layer 190 is formed on the upper portion of the N junction layer 16. [0311] The plasmonic sub-layer 190 is sprayed with metal nanoparticles by moving the substrate 10 using a splash 30 or at a fixed rate of movement. About 1013 to 1017 metal particles per unit area are sprayed on the substrate 10 to form a plasmonic sub-layer 190 (S16). [0313] The emitter layer is formed after the formation of the plasma sub-layer 190 to improve the ability to collect electrons (S17). [0314] In accordance with this embodiment, the selective emitter layer 21 may be formed by diffusing a high density of phosphorous on the N junction layer and illuminating the laser beam regionally. [0315] The selective emitter layer 21 may be formed when the N junction layer 16 is formed or formed. 099127192 Form No. A0101 Page 38 of 65 201123503 [0316] In detail, the bismuth oxide (P 〇, π a , ~^2υ5) layer (pre-vapor deposition) consists of high-temperature phosphorus oxysulfide ( P〇C13) reacts with oxygen (〇2), and the bismuth (Ρ2) layer of bismuth pentoxide (做2〇) is heat-treated at a high temperature to transfer and diffuse to Shi Xi (si2^ forms a radiation layer. Potential energy is generated to simplify the transfer of the separated charge to the N layer. [_In accordance with this embodiment, the selective emitter layer 21 is irradiated to the radiation layer by a local laser, or the portions of the substrate 10 are illuminated by heating and laser irradiation. The diffusion process is formed. 〇_ Before the selective emitter layer 21 is formed using the laser, the formation of the selective emitter layer 21 can be accelerated by forming a high concentration layer of the P material at the place where the laser is used. [0320 Phosphonite glass (PSG) is an oxide containing phosphorus, which is produced by a two-oxygen gas in a diffusion process (reaction between POCip and oxygen) and contains impurities present in the ruthenium. The glass should be removed after the formation of the junction layer 16 (S14) (S18). Ο [0321] Anti-reflection The cap layer 22 is formed on the N layer formed on the substrate 10, and the anti-reflective cap layer 22 can be formed by vapor deposition of tantalum nitride (SiNx) by plasma enhanced chemical vapor deposition or sputtering (S19). Further, the trench 24 is formed on both sides of the substrate 10 by using a laser to turn off the 'electrodes 26, 28 formed on the bottom and top portions of the substrate 10 (s2). The solar cell according to an embodiment of the present invention comprises Photonic crystal layer 104 and quantum dot layer 14 or further comprising plasmonic sublayer 190 or selective emitter layer 0993428504-0 099127192 Form No. A0101 Page 39 / Total 65 Page 21 ° 201123503 [0324] Further, the invention The solar cell may include all of the layers 104, 14, 190, and 21 mentioned. [0325] That is, the solar cell according to an embodiment of the present invention includes at least one photonic crystal layer 104, a quantum dot layer 14, and a plasma sublayer. 190 or the selective emitter layer 21, more preferably all 104, 14, 190 and 21 layers are included. [0326] Although the invention has been described with respect to specific embodiments, many skilled practitioners are not deviating The changes and repairs made by the present invention Modifications are to be understood, and are defined as additional patent ranges and their equivalents. [0327] Therefore, other embodiments than those described above can be found in the scope of additional patents " [Simple Description] 1 is a cross-sectional view of an embodiment of a solar cell according to the present invention; FIG. 2 is a flow chart of an embodiment of a solar cell method of the present invention; and FIG. 3 is a solar cell method 1 of the present invention. FIG. 4 is a cross-sectional view showing an embodiment of a solar cell method according to another embodiment of the present invention; FIG. 5 is a cross-sectional view showing an embodiment of a solar cell method according to another invention, and FIG. 6 is a view of the present invention. A plasma layer description of another embodiment; FIG. 7 is a plan view showing an embodiment of a plasma layer formed by a sputtering method in the solar cell of the present invention; and FIG. 8 is a method for manufacturing a solar cell of the present invention. FIG. 9 is a flow chart of another embodiment of the solar cell manufacturing method of the present invention. 099127192 Form No. A0101 Page 40/65 pages 0993428504-0 201123503 Process chart; BRIEF DESCRIPTION OF THE DRAWINGS FIG. 11 is a cross-sectional view showing another embodiment of a solar cell method of the present invention; FIG. 11 is a flow chart of a method for manufacturing a solar cell of the present invention; and FIG. 12 is a method for manufacturing a solar cell of the present invention. Process diagram of an embodiment; FIG. 13 is a process diagram of another embodiment of a solar cell manufacturing method of the present invention;

Figure 14 is a cross-sectional view showing another embodiment of the solar cell method of the present invention, and Figure 15 is a flow chart showing another embodiment of the solar cell manufacturing method of the present invention; Figure 16 is a solar cell of the present invention. Process diagram of another embodiment of the manufacturing method; FIG. 17 is a cross-sectional view of the solar cell of the present invention, and another embodiment;

Fig. 18 is a flow chart showing another embodiment of the solar cell manufacturing method of the present invention; and Fig. 19 is a process chart showing another embodiment of the solar cell manufacturing method of the present invention. [Description of main component symbols] [0329] 1 0, 11 0 : Substrate 12 : Surface texture layer 14 : Quantum dot layer 14a : Fine metal particles 099127192 Form No. A0101 Page 41 / Total 65 Page 0993428504-0 201123503 14b : Quantum wire 16, 54, 94: N junction layer 16a: metal nanoparticle 16b: metal particle layer 16c: hole 17: selective emitter layer 18: anti-reflection coating layer 19, • 24: trench 20, • 22 ' 26 ' 28 : Electrode 20 ' > 22 ' 26 ' 28 : Electrode 21 : : Selective emitter layer 30 : : Splashing 56, 96, 170, 190 : Plasma sub-layer 104 : Photonic crystal layer 113 : Hardening type Photoresist 113a: pattern hole 116: nano-imprinting mold 116a: irregular parts S11 to S20: step 099127192 form number A0101 page 42/total 65 page 0993428504-0

Claims (1)

201123503 VII. Patent application scope: 1. A solar cell, comprising: a substrate, the surface of the substrate is treated to reduce the solar reflection coefficient; a quantum dot layer is deposited by vapor deposition and forms a surface on the surface of the substrate. a film material; an N junction layer is formed on the upper portion of the quantum dot layer; an emitter is formed on the N junction layer, and a plurality of charges that are transmitted to the quantum dot layer for separation of incident light are transmitted to The emitter electrode and the anti-reflection coating layer are formed on the upper portion of the N junction layer and the emitter electrode to prevent reflected light. 2. The solar cell of claim 1, wherein the quantum dot layer is formed in a multilayer structure stacked by a quantum dot layer having different energy band gap energies. 3. The solar cell of claim 1, wherein the quantum dot layer is produced by initially expanding a film material, and the film material has an atomic size different from the substrate to an atom island. The solar cell according to any one of claims 1 to 3, wherein the quantum dot layer has a thickness of 1 to 20 nm per layer. The solar cell according to any one of claims 1 to 3, wherein the film material comprises cerium oxide (SiOJ, cerium nitride (SiN) 2 X , cerium oxide (SiO), oxidation Aluminum (ΑΙ, Ο.), magnesium oxide (MgO), titanate u Ο lithium (SrTiOQ), yttrium oxide (Ta^O,), titanium dioxide (TiO.), fluorinated ο 〇L magnesium (MgF2), oxidation At least one of (ZnO), indium tin oxide (ΙΤ0), yttrium (Si) composition. 6. A method for manufacturing a solar cell, comprising the following steps: 099127192 Form No. A0101 Page 43 / Total 65 Page 0993428504-0 201123503 Preparing a substrate; treating the surface of the substrate to reduce the reflection coefficient of incident light on the surface of the substrate 9 to form a quantum dot layer, wherein the quantum dot layer is formed by vapor deposition of a film material on the surface of the processing substrate; Forming a layer on the quantum dot layer; forming an emitter layer formed by heat-treating the N junction layer; removing a phosphosilicate glass, the phosphorosilicate glass being formed to form the emitter Layers are generated in the N junction layer; and forming a prevention The method of manufacturing a solar cell according to the sixth aspect of the invention, wherein the step of forming the quantum dot layer is performed by one of the quantum dot layer stacks. A multilayer structure having a different energy band gap energy. The method of manufacturing a solar cell according to claim 6, wherein the step of forming the quantum dot layer is performed by initially expanding a film material, and The film material has a different atomic size from the substrate to the atom is. The method of manufacturing a solar cell according to any one of claims 6 to 8, wherein the quantum dot layer is formed. The method comprises the steps of: vapor-depositing a film material in a layered structure, and heat-treating the vapor-deposited film material. 10. The method of manufacturing a solar cell according to any one of claims 6 to 8, The step of forming the quantum dot layer comprises sequentially vapor-depositing a film material in at least one layer structure, and heat treating the at least one vapor deposited film material 11. The method of manufacturing a solar cell according to any one of claims 6 to 8, wherein the method of forming the quantum dot layer comprises the method of forming a solar cell 099127192, a form number A0101, a page 44, a total of 65 pages 0993428504-0, 201123503. Forming a mask on the surface of the substrate, the mask having a hole having a diameter of 0.1 to 20 microns; through the hole, vapor depositing a film material on the substrate; and removing the mask to heat the film material. The method of manufacturing a solar cell according to any one of claims 6 to 8, wherein the quantum dot layer has a thickness of from 1 to 20 nm per layer. 13. The manufacture of solar energy according to any one of claims 6 to 8. The pool method, wherein the quantum dot layer comprises cerium oxide (Si〇), cerium nitride (SiNx), oxidized stone (SiO), oxidized (Al2〇3), oxidized money (MgO), barium titanate At least one of (SrTi〇3), oxygenated group of titanium dioxide (Ti〇2), magnesium fluoride (MgF), zinc oxide, indium tin oxide (ΙΤ0), and bite (S i ). The method of manufacturing a solar cell according to any one of claims 6 to 8, wherein the method further comprises the step of: generating a selective emitter layer in or after forming the N junction layer. 15. A solar cell comprising: a substrate 'the surface of the substrate is treated to reduce the solar reflectance; an N junction layer formed on the substrate; and a plasmonic layer consisting of a plurality of metal particles And formed on the upper portion of the N junction layer; and an anti-reflection coating layer is formed on the upper portion of the electropolymer layer to prevent reflected light. The solar cell of claim 15, wherein the treatment of the surface of the substrate comprises weaving to form a surface texture layer on the surface of the substrate. The solar cell according to claim 15, wherein the plasmonics 099127192 Form No. A0101 Page 45 / Total 65 pages 0993428504-0 201123503 The metal particles of the layer are dispersed on the entire surface of the N junction layer. 18 . 19 . 20 . 21 . 22 . The solar cell of claim 17 , wherein the electro-floc layer comprises the metal particles, the metal particles having a diameter of one of the penetrating Zone (tunneling region). The solar cell according to claim 17, wherein the Koryo_sublayer comprises the metal particles, the metal particles having a light diffraction region of 3 Å to 1 Å in diameter. The solar cell of claim 15, wherein the metal particles of the electrical sub-layer comprise a mesh pattern formed by a plurality of holes. The solar cell of claim 20, wherein the electropolymer layer comprises a metal particle layer in the vocal form, and the mesh pattern is coated with the metal having a thickness of up to 30 nm. A solar cell according to any one of the items 15 to 21 wherein the metal particles comprise gold (Au), silver (Ag), copper (Cu), or niobium (Ni). At least one of chromium (cr), iron (Fe), tungsten (W), turn (Mo), and zinc (Zn). A method of manufacturing a solar cell comprising the following steps: Preparing a substrate; treating the surface of the substrate to reduce the reflection coefficient of the incident light on the surface of the substrate to remove the monophosphoric acid glass; forming a plasmonic layer consisting of a plurality of metal particles and forming An upper portion of the N junction layer; and an anti-reflection coating layer. The method of manufacturing a solar cell according to claim 23, wherein the step of treating the surface of the substrate comprises weaving to form a surface on the surface of the substrate 099127192 Form No. A0101 Page 46 / Total 65 Page 0993428504-0 24 . 201123503 Surface texture layer. The method of manufacturing a solar cell according to claim 23, wherein the step of forming the plasmonic layer is to disperse the metal particles to form a metal particle layer. The method of manufacturing a solar cell according to claim 25, wherein the step of forming the plasmonic layer uniformly disperses the metal particles having a diameter of from 1 to 30 nm. The method of manufacturing a solar cell according to claim 23, wherein the step of forming the plasmonic layer forms a metal particle layer in a mesh pattern formed by a plurality of holes. The method of manufacturing a solar cell according to claim 27, wherein the step of forming the plasmonic layer forms the metal particle layer in the mesh pattern, the mesh pattern being coated up to a thickness of up to 30 nanometers of these metal particles. The method of manufacturing a solar cell according to any one of claims 23 to 28, wherein the metal particles comprise gold (Au), silver (Ag), copper (Cu), niobium (Ni). At least one of chromium (Cr), iron (Fe), tungsten (W), molybdenum (Mo), and zinc (Zn). The method of manufacturing a solar cell according to any one of claims 25 to 28, wherein the scanning sputtering system is used for dispersing the metal particles to form the plasmonic layer, and each of the ejection units One of the areas has a particle density of 1〇13 to 1017 atoms. 31. A solar cell comprising: a substrate having a surface treated to reduce a solar reflectance; a photonic crystal layer having a periodically arranged lattice structure, the lattice structure being etched by the substrate Forming, an N junction layer formed on the upper portion of the substrate; and 099127192 Form No. A0101 Page 47 / Total 65 Page 0993428504-0 201123503 A reflection preventing coating layer formed on the upper portion of the N junction layer Prevent reflected light. The solar cell of claim 31, wherein the treatment of the surface of the substrate comprises weaving to form a surface texture layer on the surface of the substrate. The solar cell of claim 31, wherein the photonic crystal layer comprises a plurality of acicular etched trenches, the plurality of acicular etched trenches being etched from the surface texture layer. The job of T-Meng·Functions meets the solar energy embarrassment, Dan ^ The needle-shaped etching groove is 3 (1) called m, and contains several in the periodic lattice = to shape = residual ride (four) copies, pay The riding (four) size is a solar cell as described in the application for a full-time _32 shirt item, wherein the surface texture layer has a plurality of tapered money portions, and the tapered irregular portions have a thickness of 4 to 1 micron. Interval. - a method of manufacturing a solar cell comprising the steps of: preparing a substrate; treating the surface of the substrate with less reflection of the reflection of a person's surface light on the surface of the substrate - a photonic crystal layer, having a lattice structure of a periodic arrangement The structure is formed by engraving the substrate; forming a -N junction layer on the substrate' and the photonic crystal layer is formed on the substrate to remove a phosphophosic acid glass; and forming an anti-reflection coating. A battery method in which a surface is formed into a table 0993428504-0. The step of manufacturing solar energy to treat the surface of the substrate as described in claim 36 of the patent application includes weaving in the base form number A0101 page 61/2011. 39 . 40 . Ο 41 . 〇 42 . 43 . 44 · Surface texture layer. The method of fabricating a solar cell according to claim 36, wherein the step of forming the photonic crystal layer comprises etching to form a plurality of needle-shaped etched trenches. The method of manufacturing a solar cell according to claim 38, wherein the etching step is a method of using a reactive ion etching method and an inductively coupled plasma method, such as the manufacturing of a solar cell according to claim 36 or 37. The method, wherein the step of forming the photonic crystal layer comprises: coating a hardened photoresist and hardening; forming a mask pattern, the mask pattern having a plurality of pattern holes, the pattern holes and the hardened light Corresponding to the photonic crystal layer pattern; the pattern holes are used to expose the substrate and the substrate is etched; the mask pattern is removed; and the substrate removed by diffusing phosphorus in the mask pattern is A joint layer is formed. The method of manufacturing a solar cell according to claim 40, wherein the step of forming the mask pattern comprises using an imprinting module to form the pattern holes in the substrate, the imprinting module having a corresponding photonic crystal The irregular part of the layer type. 1至2微米。 The size of the mask type is 0.1 to 2 microns, as described in claim 41. The method of manufacturing a solar cell according to claim 40, wherein the step of etching the substrate is to emit an ion beam. The method for manufacturing a solar cell according to claim 40, wherein the etching step is a reactive ion etching method and an inductive coupling plasma method. 099127192 Form No. 1010101 Page 49/65 Page 0993428504-0 201123503 4 5 . a solar cell comprising: a substrate, the surface of the substrate is treated to reduce a solar reflectance; a photonic crystal layer is formed on a surface of the substrate, and the photonic crystal layer is composed of a plurality of fine metal particles and a plurality of a quantum wire composition, the quantum wires are formed at the bottom of the fine metal particles to reflect incident light from the inside; an N junction layer is formed on the photonic crystal layer; and an anti-reflection coating layer is formed on The N is connected to the upper portion of the surface layer to prevent reflected light. The solar cell of claim 45, wherein the treatment of the surface of the substrate comprises weaving to form a surface texture layer on the surface of the substrate. 47. The solar cell of claim 45, wherein the quantum wires of the photonic crystal layer are in a needle-like state, and the quantum wires are deposited by vapor deposition on the bottom of the metal particles. form. The solar battery according to any one of claims 45 to 47, wherein the metal particles have a diameter of 5 to 50 nm. The solar battery according to any one of claims 45 to 47, wherein the quantum wires have a length of 10 to 100 nm. 50. A method of fabricating a solar cell, comprising the steps of: preparing a substrate; treating a surface of the substrate to reduce a reflection coefficient of incident light on a surface of the substrate to form a photonic crystal layer on a surface of the substrate, and the photonic crystal layer And consisting of a plurality of fine metal particles and a plurality of quantum wires formed at the bottom of the fine metal particles to reflect incident light from the inside; forming an N junction layer on the substrate, and the photonic crystal layer Formed on the base 099127192 Form No. A0101 Page 50 / Total 65 Page 0993428504-0 201123503 51 . 52 . Ο 53 . 54 . ❹ 55 quality; remove the monophosphonate glass; and form an anti-reflective coating. The method of manufacturing a solar cell according to claim 50, wherein the treatment of the surface of the substrate comprises weaving to form a surface texture layer on the surface of the substrate. The method for manufacturing a solar cell according to claim 50, wherein the step of forming the photonic crystal layer comprises: forming a plurality of fine metal particles by spraying a plurality of metal particles on a surface of the substrate; And forming a solar cell method according to the invention of claim 52 The fine metal particle step is performed by scanning sputtering to disperse the fine metal particles, and the metal fine particles have a density of 1013 to 1017 atoms per unit area. A solar cell comprising: a substrate having a surface treated to reduce a solar reflection coefficient; a photonic crystal layer having a periodically arranged lattice structure, the lattice structure being formed by etching the substrate; a quantum dot layer deposited by vapor deposition and forming a film material on the upper portion of the photonic crystal layer; an N junction layer formed on an upper portion of the quantum dot layer; and an anti-reflection coating layer formed on the N junction Above the top layer to prevent reflected light. The solar cell of claim 54, wherein the solar energy 099127192 Form No. A0101 Page 51 of 65 0993428504-0 201123503 The battery further comprises a selective emitter layer on the N junction layer. The solar cell of claim 54, wherein the solar cell further comprises a plasmonic layer, the plasmonic layer being located above the N junction layer and composed of a plurality of metal particles. 57. A method of fabricating a solar cell comprising the steps of: preparing a substrate; treating a surface of the substrate to reduce a reflection coefficient of incident light on the surface of the substrate 9 to form a photonic crystal layer, and the photonic crystal layer has a periodic arrangement a lattice structure formed by etching the substrate; forming a quantum dot layer formed by vapor deposition and forming a film material on the upper portion of the photonic crystal layer; forming an N junction layer on the substrate And the quantum dot layer is formed on the substrate* to remove a phosphonate glass, the phosphonate glass is formed on the N junction layer; forming an emitter layer, the emitter layer is heat treated N is connected to the surface layer; and an anti-reflective coating layer is formed on the emitter layer. 099127192 Form No. A0101 Page 52 of 65 0993428504-0