TW201121065A - Thin-film solar cells containing nanocrystalline silicon and microcrystalline silicon. - Google Patents
Thin-film solar cells containing nanocrystalline silicon and microcrystalline silicon. Download PDFInfo
- Publication number
- TW201121065A TW201121065A TW098142586A TW98142586A TW201121065A TW 201121065 A TW201121065 A TW 201121065A TW 098142586 A TW098142586 A TW 098142586A TW 98142586 A TW98142586 A TW 98142586A TW 201121065 A TW201121065 A TW 201121065A
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- type
- film
- microcrystalline
- solar cell
- Prior art date
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 18
- 229910021424 microcrystalline silicon Inorganic materials 0.000 title abstract 3
- 229910021423 nanocrystalline silicon Inorganic materials 0.000 title abstract 3
- 239000010408 film Substances 0.000 claims abstract description 81
- 239000004065 semiconductor Substances 0.000 claims abstract description 77
- 238000006243 chemical reaction Methods 0.000 claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 238000000034 method Methods 0.000 claims description 41
- 239000004575 stone Substances 0.000 claims description 22
- 210000003298 dental enamel Anatomy 0.000 claims description 15
- 239000013078 crystal Substances 0.000 claims description 13
- 229910052732 germanium Inorganic materials 0.000 claims description 12
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 12
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 7
- 238000005229 chemical vapour deposition Methods 0.000 claims description 7
- 239000004020 conductor Substances 0.000 claims description 7
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 7
- 229910052715 tantalum Inorganic materials 0.000 claims description 7
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 7
- 239000004576 sand Substances 0.000 claims description 6
- 238000002425 crystallisation Methods 0.000 claims description 5
- 230000008025 crystallization Effects 0.000 claims description 5
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 5
- 229910021529 ammonia Inorganic materials 0.000 claims description 4
- 239000001257 hydrogen Substances 0.000 claims description 4
- 229910052739 hydrogen Inorganic materials 0.000 claims description 4
- 238000005224 laser annealing Methods 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 4
- 238000004050 hot filament vapor deposition Methods 0.000 claims description 3
- 239000012535 impurity Substances 0.000 claims description 3
- 239000002159 nanocrystal Substances 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 238000009792 diffusion process Methods 0.000 claims description 2
- 238000005468 ion implantation Methods 0.000 claims description 2
- 229910052707 ruthenium Inorganic materials 0.000 claims description 2
- 239000007790 solid phase Substances 0.000 claims description 2
- 101100041681 Takifugu rubripes sand gene Proteins 0.000 claims 3
- 239000007789 gas Substances 0.000 claims 2
- 239000000203 mixture Substances 0.000 claims 2
- KDXKERNSBIXSRK-UHFFFAOYSA-N Lysine Natural products NCCCCC(N)C(O)=O KDXKERNSBIXSRK-UHFFFAOYSA-N 0.000 claims 1
- 239000004472 Lysine Substances 0.000 claims 1
- 235000014676 Phragmites communis Nutrition 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
- 238000005234 chemical deposition Methods 0.000 claims 1
- DIOQZVSQGTUSAI-NJFSPNSNSA-N decane Chemical group CCCCCCCCC[14CH3] DIOQZVSQGTUSAI-NJFSPNSNSA-N 0.000 claims 1
- 238000000151 deposition Methods 0.000 claims 1
- 230000008021 deposition Effects 0.000 claims 1
- 150000002431 hydrogen Chemical class 0.000 claims 1
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 claims 1
- 229910052500 inorganic mineral Inorganic materials 0.000 claims 1
- 239000007788 liquid Substances 0.000 claims 1
- 239000007791 liquid phase Substances 0.000 claims 1
- 239000012528 membrane Substances 0.000 claims 1
- 239000011707 mineral Substances 0.000 claims 1
- 239000002120 nanofilm Substances 0.000 claims 1
- 238000007747 plating Methods 0.000 claims 1
- 238000007740 vapor deposition Methods 0.000 claims 1
- 230000010748 Photoabsorption Effects 0.000 abstract 1
- 238000001228 spectrum Methods 0.000 abstract 1
- 238000010521 absorption reaction Methods 0.000 description 6
- 238000013461 design Methods 0.000 description 4
- 230000003595 spectral effect Effects 0.000 description 3
- 238000001530 Raman microscopy Methods 0.000 description 2
- 238000001237 Raman spectrum Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- -1 decane Chemical class 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 238000001429 visible spectrum Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 241000283690 Bos taurus Species 0.000 description 1
- 101100328518 Caenorhabditis elegans cnt-1 gene Proteins 0.000 description 1
- 206010012735 Diarrhoea Diseases 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 241000239226 Scorpiones Species 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000009313 farming Methods 0.000 description 1
- 235000013305 food Nutrition 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000010297 mechanical methods and process Methods 0.000 description 1
- 230000005226 mechanical processes and functions Effects 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000010025 steaming Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 239000001648 tannin Substances 0.000 description 1
- 235000018553 tannin Nutrition 0.000 description 1
- 229920001864 tannin Polymers 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000002211 ultraviolet spectrum Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Landscapes
- Photovoltaic Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW098142586A TW201121065A (en) | 2009-12-11 | 2009-12-11 | Thin-film solar cells containing nanocrystalline silicon and microcrystalline silicon. |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW098142586A TW201121065A (en) | 2009-12-11 | 2009-12-11 | Thin-film solar cells containing nanocrystalline silicon and microcrystalline silicon. |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201121065A true TW201121065A (en) | 2011-06-16 |
| TWI408821B TWI408821B (enrdf_load_stackoverflow) | 2013-09-11 |
Family
ID=45045417
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW098142586A TW201121065A (en) | 2009-12-11 | 2009-12-11 | Thin-film solar cells containing nanocrystalline silicon and microcrystalline silicon. |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TW201121065A (enrdf_load_stackoverflow) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8557041B1 (en) | 2012-04-20 | 2013-10-15 | Industrial Technology Research Institute | Method for manufacturing P-I-N microcrystalline silicon structure for thin-film solar cells |
| TWI475703B (zh) * | 2011-12-27 | 2015-03-01 | Nexpower Technology Corp | 薄膜太陽能電池 |
| TWI482296B (zh) * | 2011-07-27 | 2015-04-21 | Univ Nat Sun Yat Sen | 具奈米抗反射層之太陽能電池構造 |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI557425B (zh) * | 2015-11-24 | 2016-11-11 | 財團法人金屬工業研究發展中心 | 具抗反射導電膜之光電結構 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080271675A1 (en) * | 2007-05-01 | 2008-11-06 | Applied Materials, Inc. | Method of forming thin film solar cells |
| TW200945598A (en) * | 2008-04-24 | 2009-11-01 | Contrel Technology Co Ltd | Structure and process of a silicon-based thin film solar-cell with multijunction structure |
-
2009
- 2009-12-11 TW TW098142586A patent/TW201121065A/zh unknown
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI482296B (zh) * | 2011-07-27 | 2015-04-21 | Univ Nat Sun Yat Sen | 具奈米抗反射層之太陽能電池構造 |
| TWI475703B (zh) * | 2011-12-27 | 2015-03-01 | Nexpower Technology Corp | 薄膜太陽能電池 |
| US8557041B1 (en) | 2012-04-20 | 2013-10-15 | Industrial Technology Research Institute | Method for manufacturing P-I-N microcrystalline silicon structure for thin-film solar cells |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI408821B (enrdf_load_stackoverflow) | 2013-09-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP4560245B2 (ja) | 光起電力素子 | |
| TWI438904B (zh) | 薄膜式太陽能電池及其製造方法 | |
| CN103000742B (zh) | 一种带隙渐变硅量子点多层膜的太阳电池及制备方法 | |
| TW201203576A (en) | Single junction CIGS/CIS solar module | |
| JPS6348197B2 (enrdf_load_stackoverflow) | ||
| TW201128789A (en) | New structure solar cell with superlattices | |
| CN101777593A (zh) | 一种具有掺杂中间层结构的非晶/微晶硅叠层太阳电池及其制造方法 | |
| CN103531647B (zh) | 异质结太阳能电池及其制备方法 | |
| CN102341919B (zh) | 太阳能电池 | |
| CN103563091B (zh) | 具有改善的隧道结的串列太阳能电池 | |
| CN108321240A (zh) | 一种太阳能异质结电池及其制备方法 | |
| CN217182188U (zh) | 一种钙钛矿/钙钛矿/硅-锗基三结叠层太阳能电池 | |
| CN102983215A (zh) | 具有硅纳米线结构的硅薄膜太阳能电池的制备方法 | |
| TW201121065A (en) | Thin-film solar cells containing nanocrystalline silicon and microcrystalline silicon. | |
| US8652871B2 (en) | Method for depositing an amorphous silicon film for photovoltaic devices with reduced light-induced degradation for improved stabilized performance | |
| CN101872805B (zh) | 一种具备杂质深能级的晶体硅光伏电池的制备方法 | |
| CN101540345B (zh) | 纳米硅薄膜三叠层太阳电池及其制备方法 | |
| CN104733548A (zh) | 具有量子阱结构的硅基薄膜太阳能电池及其制造方法 | |
| CN204668317U (zh) | 具有梯度结构的硅基薄膜太阳能电池 | |
| TWM319521U (en) | Thin film solar-cell with tandem intrinsic layer | |
| CN106784146A (zh) | 一种甲胺铅碘/可调带隙非晶硅锗叠层薄膜电池组装技术 | |
| TW201244144A (en) | Improved a-Si:H absorber layer for a-Si single-and multijunction thin film silicon solar cell | |
| CN102157594A (zh) | nc-Si:H/SiNx超晶格量子阱太阳电池 | |
| TW200933908A (en) | A silicon-based thin film solar-cell | |
| TW201126742A (en) | High-efficiency amorphous silicon photovoltaic devices |