201117420 六、發明說明： 【發明所屬之技術領域】 本發明是有關於一種發光二極體，特別是指一種平面 導通式發光二極體及其設計方法。 【先前技術】 參閱圖1、圖2，目前平面導通式發光二極體丨包含一 板狀的基材11、一形成在該基材u上並在提供電能時以光 φ 電效應產生光的發光單元12，及設置在該發光單元12上彼 此相配合地對該發光單元12提供電能的一第—電極13與 一第二電極14 » 5亥基材11通常是藍寳石（sapphire )。 該發光單元12主要是選擇氮化鎵系半導體材料自該基 - 材11向上磊晶形成，具有一層與該基材11連接且包括有一 底部124與一自該底部124 一體向上延伸之台部125的第 —型披覆層121、一自該第一型披覆層121的台部124向上 • 形成的第二型披覆層122，及-層在磊晶形成該第一、二型 披覆層121、122後以透明且可導電的材料形成在該第二型 披覆層122上的電流擴散層123，該第一 '二型披覆層⑵ 、122在彼此連接處並形成一在提供電能時產生光子的接面 層域！26,該第一型彼覆層121之底部124與台部125、第 二型彼覆層m、電流擴散層123形成的態樣即為業界所稱 該第一電極 未延伸有該台部 13設置在該第一型披覆層121之底部 125的區域上，並與該第一型彼覆層 124 121 201117420 相電連接，該第一電極13具有一第一銲墊單元131，及自 該第一銲墊單元131向外延伸的第一指狀片單元132，該第 知墊單元131包括一位於同一側邊供外界以打線（wire bonding)方式電連接的第一銲墊U3，該第一指狀片單元 132包括一連接該二第一銲墊133的第一連接段134、二分 別自该二第一銲墊丨33向該第二電極14方向延伸的第—側 延伸段135,及一自該第一連接段134向該第二電極14方 向延伸的中延伸段136，該中延伸段136至該二第一側延伸 段135的距離相等。 該第二電極14設置在該電流擴散層123頂面上而與該 第一型披覆層122電連接，具有一第二銲墊單元141，及自 該第一銲墊單元141向外延伸的第二指狀片單元該第 一銲墊單元141具有二相間隔地位於相反於設置有該二第 銲墊133之側邊上且供外界以打線方式電連接的第二銲 °亥第一私狀片單元142具有一連接該二第二銲塾 :的第一連接段144，及二分別自該二第二銲墊分別 向以第辉塾133方向延伸的第二侧延伸段145，該任一第 I伸奴145至相鄰的第一側延伸段135與中延伸段136 的距離相等。 當第一、-番1 一冤極13、14配合提供電能時，電流自該等 第二銲墊@ _ / 弟一扣狀片單元142經由電流擴散層123橫 :引後再均勻地向下流通過第一、二型披覆層Μ， 美面層域126,而以光電效應產生光子產生的光反向於 土 11方向穿出發光單元12而向外正向出光。 201117420 現在的平面導通式發光二極冑1冑然在外界提供 T確實可以發光，但是’正向出光時發光亮度最大的部: 疋集中在環繞第二電極14 _圍區域，特収第二辉塾 143周圍’然後才向外逐漸降低，所以正向出光並不均勻， 因此’目前的平面導通式發光二極體1需要改進，而讓敕 體出光更加地均勻。 ι 【發明内容】 發明人自目前平面導通式發光二極體的實際製程中發 現，第一、二電極是於同一製程步驟中製作成型的，而因 ，，第一、二電極的第一、二銲墊單元與第一、二指狀片 早兀的厚度均實質相等，構成材料也完全—致，也因為第 一、二薛塾單元與第_、二指狀片單元的厚度相等、構成 材料-致，所以反而在以第一、二電極提供電能時，電流 會自然地較集中自對應於第二電極周緣區域向下流通至第 -電極，而造成了上述正向出光時發光亮度均集中在環繞 第一電極的周圍區域的問題。 所以，當設計第一、二電極的第一、二銲墊單元與第 一、二指狀片單元具有對應的厚度差值，及/或第一、二指 狀片單元彼此也具有對應的厚度差值時，以第一、二電極 提供電能時電流即非均勻地流出，同時再配合電流循電阻 最小及最短路徑流動的必然趨勢，即可使電流不會集中於 第二電極周圍區域，如此一來，即可克服正向出光時發光 亮度集中於第二電極的周圍區域的問題，同時，這樣的解 決方式，只需要於第一、二電極的製程步驟中簡單區分出 201117420 元的過程而已 並無製作上的 形成第一、二銲墊單元與第一、二指狀片單 ’對現有的技術而言僅屬簡單的參數變化， 困難’或是有不易導入現有製程的問題。 體 因此，本發明之目的，即在提供一種電極厚度彼此不 同而具有預定正向光出光集中區域的平面導通式發光二極 再者’本發明之另-目的’即在提供—種電極厚度不 同’而具有預定正向光出光集中區域的平面導通式發光二 極體的設計方法。 於是，本發明具有預定正向光出光集中區域的平面導 通式f光二極體包含—板狀的基材、—形成在該基材上的 發光早兀、一第一電極，及一第二電極。 該發光單元具有一層第一型披覆層，及—自該第一型 彼:二:广成的第一型披覆層，該第―、二型披覆層在 彼此連接處形成-在提供電能時產生光子的接面層域。 覆設置在該第一型披覆層上並與該第-型披 θ電連接’具有—供外界電連接用的第-鋒墊單元， 及一自該第—鮮墊單元向外延伸的第-指狀片單元，該第 一焊塾單元的厚度大於該卜指狀片單元的厚；：^ 層置::發光單元頂面並與該第二型披覆 電能:―供外界電連接用的：： 元，㈣及自該第一銲塾單元向外延伸的第二指狀片單 銲塾單元的厚度大於該第二指狀片單元的厚度 201117420 ’本發明具有敎正向光出光集巾區域的平面導 光二極體的設計方法，是在—基材上形成-包括有 披覆層與—第二披覆層的發光單it，其中，該第一 、二披覆層在彼此連接處形成—在提供電能時產生光子的 接面層域，接著在形成分職該第—、：彼覆層電連接且 彼此配合對該發光單元提供電能的―第―電極與—第二電 極^使形成的第-電極具有—供外界電連接關第—鲜 墊早兀’及-自該第一銲墊單元向外延伸且厚度小於該第 -銲墊單元的第-指狀片單元，且形成的該第二電極具有 :供外界電連接用的第二銲墊單元，及一自該第二銲墊單 TL向外延伸且厚度小於該第二鲜塾單元的第二指狀片單元 …本發明之功效在於：以第_、二電極的第―、二銲塾 早疋與第—、二指狀片單元的厚度不同的設計，使電流不 會集中地自肖應於第^電極肖圍區域向下流通至第一電極 ’而可以改善正向出光時發光亮度均集中在環繞第二電極 的周邊區域的問題，進而可讓正向光出光更均勻實際工 作壽命更趨近設計值。 【實施方式】 有關本發明之前述及其他技術内容、特點與功效，在 以下配合參考圖式之一個較佳實施例的詳細說明中，將可 清楚的呈現。 在本發明被詳細描述之前’要注意的是，在以下的說 201117420 明内谷中’類似的元件是以相同的編號來表示。 參閱圖3、圖4,本發明具有預定正向光出光集中區域 的平面導通式發光二極體2包含一板狀的基材21、一形成 在該基材21上並在提供電能時以光電效應產生光的發光單 疋22，及設置在該發光單元22上彼此相配合地對該發光單 元22提供電能的一第一電極23與一第二電極24。 °亥基材21通常是藍寶石（sapphire )。 該發光單元22主要是選擇氮化鎵系半導體材料自該基 材21向上磊晶形成，具有一層與該基材連接且包括有 一底部224與一自該底部224 一體向上延伸之台部225的 第型披覆層221、一自該第一型彼覆層221的台部224向 上形成的第二型披覆層 222，及一層在磊晶形成該第一、二 型披覆層221、222後以透明且可導電的材料形成在該第二 型披覆層222上的電流擴散層223，該第一、二型彼覆層 221、222在彼此連接處並形成一在提供電能時產生光子的 接面層域226,該第一型披覆層221之底部224與台部225 、第二型彼覆層222、電流擴散^ 223形成的態樣即為業界 所稱的MESA。 該第一電極23設置在該第一型坡覆層221之底部224 未延伸有該台部225的區域上，並與該第一型披覆層221 相電連接，該第-電極23具有—第—銲塾單元231，及自 該第-銲塾單元231向外延伸的第一指狀片單元232,該第 一銲塾單it 231包括二位於同-側邊供外界以打線方式電 連接的第-銲墊233’該第-指狀片單元232包括一連接該 201117420 二第一銲墊233的第一連接段234、二分別自該二第一銲墊 233向該第二電極24方向延伸的第一側延伸段235，及一 自該第一連接段234向該第二電極24方向延伸的中延伸段 236,該中延伸段236至該二第一側延伸段235的距離相等 ，特別是，該第一銲墊單元231的二第一銲墊233的厚度 大於第一指狀片單元232的第一連接段234、第一側延伸段 235與中延伸段236。201117420 VI. Description of the Invention: [Technical Field] The present invention relates to a light-emitting diode, and more particularly to a planar conductive light-emitting diode and a design method thereof. [Prior Art] Referring to FIG. 1 and FIG. 2, the planar light-emitting diode 丨 includes a plate-shaped substrate 11 which is formed on the substrate u and generates light by the electric effect of light φ when supplying electric energy. The light-emitting unit 12, and a first electrode 13 and a second electrode 14 provided on the light-emitting unit 12 to supply electric power to the light-emitting unit 12 are generally sapphire. The light-emitting unit 12 is mainly formed by selecting a gallium nitride-based semiconductor material to be epitaxially formed upward from the substrate 11 and having a layer connected to the substrate 11 and including a bottom portion 124 and a land portion 125 extending integrally from the bottom portion 124. a first type of cladding layer 121, a second type of cladding layer 122 formed upward from the land portion 124 of the first type of cladding layer 121, and a layer to form the first and second type of cladding in epitaxial formation After the layers 121, 122 are formed of a transparent and electrically conductive material, the current diffusion layer 123 is formed on the second type of cladding layer 122. The first 'type 2 cladding layers (2), 122 are connected to each other and form a The junction layer of photons is generated when power is generated! 26, the bottom portion 124 of the first type of the first cladding layer 121 and the mesa portion 125, the second type of the cladding layer m, and the current diffusion layer 123 are formed by the industry. The first electrode does not extend the mesa portion 13 The first electrode 13 has a first pad unit 131, and the first electrode 13 is electrically connected to the bottom portion 125 of the first type of cladding layer 121. a first finger pad unit 132 extending outwardly from the first pad unit 131, the first pad unit 131 includes a first pad U3 on the same side for external connection by wire bonding. The first finger segment 132 includes a first connecting portion 134 connecting the two first pads 133, and a first side extending portion 135 extending from the two first pads 33 to the second electrode 14 respectively. And a middle extension 136 extending from the first connecting section 134 toward the second electrode 14 , wherein the distance between the middle extension 136 and the two first side extensions 135 is equal. The second electrode 14 is disposed on the top surface of the current diffusion layer 123 and electrically connected to the first type of cladding layer 122, has a second pad unit 141, and extends outward from the first pad unit 141. The second finger unit 141 has a second solder joint 141 which is disposed at a distance from the side opposite to the second solder pad 133 and is electrically connected to the outside by a wire bonding method. The sheet unit 142 has a first connecting portion 144 connecting the two second soldering dies, and two second extending portions 145 extending from the second soldering pads to the second illuminating 133, respectively. A first extension 145 to the adjacent first side extension 135 is equidistant from the intermediate extension 136. When the first, first, and first drains 13 and 14 cooperate to supply electric energy, the current flows from the second solder pads @ _ / brother-like button unit 142 via the current diffusion layer 123: By the first and second type coating layers, the surface layer 126 is formed, and the light generated by the photoelectric effect photons is emitted in the direction of the soil 11 and exits the light-emitting unit 12 to emit light outward. 201117420 The current planar light-emitting diode 胄1 is actually provided in the outside world. T can actually emit light, but the part with the highest luminance when the light is emitted forward is: 疋 concentrated around the second electrode 14 _ surrounding area, special second light塾 around 143' then gradually decreases outward, so the forward light is not uniform, so 'the current planar conductive LED 1 needs to be improved, and the 敕 body is more uniform. ι [Summary] The inventors found in the actual process of the current planar light-emitting diode that the first and second electrodes are formed in the same process step, and because of the first and second electrodes, The thickness of the second pad unit and the first and second finger pieces are substantially equal, and the constituent materials are completely identical, and also because the thicknesses of the first and second sputum units are equal to those of the first and second finger units. The material is so, so when the electric energy is supplied by the first and second electrodes, the current is naturally concentrated from the peripheral edge region corresponding to the second electrode to the first electrode, and the luminance of the light is generated when the forward light is emitted. Focus on the problem surrounding the surrounding area of the first electrode. Therefore, when the first and second pad units of the first and second electrodes are designed to have corresponding thickness differences, and/or the first and second finger units have corresponding thicknesses to each other, When the difference is obtained, the current flows non-uniformly when the first and second electrodes supply electric energy, and at the same time, the current trend of the minimum current and the shortest path flow is matched, so that the current is not concentrated in the area around the second electrode. In one way, the problem that the luminance of the light is concentrated in the surrounding area of the second electrode during the forward light emission can be overcome. At the same time, such a solution only needs to simply distinguish the process of 201117420 yuan in the process steps of the first and second electrodes. There is no problem in forming the first and second pad units and the first and second finger sheets alone, which is a simple parameter change for the prior art, which is difficult or difficult to introduce into the existing process. Therefore, it is an object of the present invention to provide a planar-conducting light-emitting diode having a predetermined thickness of a predetermined positive light-emitting concentrating electrode, and the other object of the present invention is to provide a different thickness of the electrode. 'The design method of a planar conductive light-emitting diode having a predetermined concentrated light exiting concentrated region. Thus, the planar conductive f-diode of the present invention having a predetermined forward light exiting concentrated region comprises a plate-like substrate, a light-emitting layer formed on the substrate, a first electrode, and a second electrode . The light emitting unit has a first type of coating layer, and - from the first type: two: a wide type of first coating layer, the first and second type coating layers are formed at the joints of each other - provided When the electrical energy is generated, the junction layer of the photon is generated. a first-front pad unit disposed on the first type of cladding layer and electrically connected to the first type-type θ, and having an outer-electrical connection a finger-like unit, the thickness of the first soldering unit is greater than the thickness of the finger-shaped sheet unit; and: layering: the top surface of the light-emitting unit and the electric energy of the second type: “for external electrical connection The thickness of the second finger-shaped single-welded unit extending outward from the first soldering unit is greater than the thickness of the second finger-shaped unit 201117420 'The present invention has a positive light-emitting set The planar light guiding diode of the towel area is designed to be formed on the substrate - a light emitting sheet including a coating layer and a second coating layer, wherein the first and second coating layers are connected to each other Forming a junction layer domain that generates photons when power is supplied, and then forming a "first electrode" and a second electrode that electrically connect to each other and cooperate with each other to supply electric energy to the light emitting unit. The formed first electrode has - for external electrical connection, the fresh pad is early and the The first pad unit extends outwardly and has a thickness smaller than the first finger unit of the first pad unit, and the second electrode is formed with: a second pad unit for external electrical connection, and a The second pad has a single TL extending outward and has a thickness smaller than that of the second finger unit of the second fresh sputum unit. The effect of the present invention is that the first and second electrodes are first and second, and the second and second electrodes are The design of the thickness of the two-finger-like piece unit is different, so that the current does not concentrate in the downward flow of the first electrode to the first electrode in the axial region of the second electrode, and the brightness of the light is concentrated in the circumferential direction. The problem of the peripheral area of the two electrodes, in turn, allows the forward light to be more uniform and the actual working life is closer to the design value. The above and other technical contents, features, and advantages of the present invention will be apparent from the following detailed description of the preferred embodiments. Before the present invention has been described in detail, it is to be noted that the like elements in the following description of the referenced <RTIgt; Referring to FIG. 3 and FIG. 4, the planar conductive light-emitting diode 2 having a predetermined forward light-emitting concentrated region includes a plate-shaped substrate 21, which is formed on the substrate 21 and is provided with photoelectric energy when supplying electric energy. The light-emitting unit 22 for generating light, and a first electrode 23 and a second electrode 24 disposed on the light-emitting unit 22 to supply electric power to the light-emitting unit 22 in cooperation with each other. The substrate 21 is typically sapphire. The light-emitting unit 22 is mainly formed by selecting a gallium nitride-based semiconductor material to be epitaxially formed upward from the substrate 21, and has a layer connected to the substrate and including a bottom portion 224 and a portion 225 extending upward from the bottom portion 224. a type of cladding layer 221, a second type of cladding layer 222 formed upward from the land portion 224 of the first type of cladding layer 221, and a layer after epitaxial formation of the first and second type cladding layers 221, 222 The current diffusion layer 223 is formed on the second type cladding layer 222 by a transparent and electrically conductive material, and the first and second type cladding layers 221, 222 are connected to each other and form a photon when generating electric energy. The junction layer region 226, the bottom portion 224 of the first type cladding layer 221 and the mesa portion 225, the second type cladding layer 222, and the current diffusion 223 are known as the MESA in the industry. The first electrode 23 is disposed on a region of the bottom portion 224 of the first type of slope layer 221 where the land portion 225 is not extended, and is electrically connected to the first type cladding layer 221, and the first electrode 23 has a first soldering unit 231, and a first finger unit 232 extending outward from the first soldering unit 231, the first soldering unit unit 231 includes two sides on the same side for external connection by wire bonding The first-type pad unit 232 includes a first connecting portion 234 connecting the first and second pads 233 of the 201117420, and two directions from the two first pads 233 to the second electrode 24, respectively. An extended first side extension 235 and a middle extension 236 extending from the first connection section 234 toward the second electrode 24, wherein the intermediate extension 236 is equidistant from the two first side extensions 235, In particular, the thickness of the two first pads 233 of the first pad unit 231 is greater than the first connection segment 234, the first side extension 235 and the middle extension 236 of the first finger unit 232.
該第二電極24設置在該電流擴散層223頂面上而與該 第一型披覆層222電連接，具有一第二銲墊單元241，及自 該第二銲墊單元241向外延伸的第二指狀片單元242，該第 二銲墊單元241具有二相間隔地位於相反於設置有該二第 -銲墊233《側邊上且#外界以打線方式電連接的第二鲜 墊243,該第二指狀片單元242具有一連接該二第二銲墊 243的第—連接& 244，及二分別自該二第二銲墊243分別 向β亥第-銲塾233方向延伸的第二侧延伸段245，該任一第 一側延伸段245至相鄰的第一側延伸段235與中延伸段236 的距離相等’特別是’該第二銲塾單& Μ的二第二鲜塾 243的厚度大於第一指狀片單元242的第二連接段與第 二側延伸段245。 田第一電極23、24配合提供電能時，電流自該等 第-銲塾243 f 一指狀片單元242經由電流擴散層橫 向導引後再均勾地向下流通過第一'二型披覆層Π， 與接面層域226,而以光電效應產生光子產生的光反向於 基材方向穿出發光單元22而向外正向出光。 201117420 由於該第一、二銲墊單元231、241的第一、二銲整 233、243的厚度大於第一、二指狀片單元232、242，所以 正向出光時發光亮度最大的部份大致集中在環繞第一、二 電極23、24的第一、二指狀片單元232、242周邊區域， 且愈靠近第-、二側延伸段235、245的端部區域亮度越大 」然後才漸次向第-、二銲墊233、243方向漸低，也就是 說’電流雖_是自對應於第二電極24周緣區域向下流通 ’但藉著第…墊233、243與第_、二指狀片單元 232、242彼此具有相對應的厚度差的緣故，而不再集中只 發生在對應於第二電極24的周緣區域，也因此，正向出光 會更均勻，同時，也因為電流並未總是集中流通發生在特 定的區域，而使本發明的平面導通式發光二極體2的實際 工作壽命更趨近於理論設計值。 ••赤上所述，本發明主要是在基材上形成發光單元後， 形成第―、二電極時使形成的第…二電極的第一、二 鐸塾單S的厚度分別大於第―、二指狀片單元的厚度，更 =步地’第-、二指狀片單元的厚度也具有預定的對應 差值，而藉著厚薄各異的第-、二料單元與第―、二指 :片單元，使得電流雖然還是自對應於第二電極周圍區域 二：通，但藉著第一、二録塾與第…二指狀片單元彼 ==相對應的厚度差的緣故，而可較均勻的分散不再集 = 極的周緣區域’進而可以讓整體正向光出光更 面遂’同時’也因為電流並未集中流動，而使本發明的平 面導通式發光二極體的實際工作壽命更趨近於理論設計值 10 201117420 ’確實改進目前平面導ii _v i , Λ ,, τ回导逋式發光二極體出光不夠均勻的缺 點’達成本發明之目的。 准以上所述者，j堇為本發明之較佳實施例而已，當不 能以此限定本發明實施之範圍，即大凡依本發明巾請專利 範圍及發明說明内容所作之簡單的等效變化與修飾，皆仍 屬本發明專利涵蓋之範圍内。 【圖式簡單說明】 圖1疋一俯視圖，說明習知的平面導通式發光二極體 9 圖2疋一剖視不意圖，與圖i共同說明習知的平面導 通式發光二極體； 圖3是一俯視圖，說明本發明正向出光均勻的平面導 通式發光二極體的一較佳實施例；及 圖4是-剖視示意圖，配合與圖3共同說明本發明正 向出光均勻的平面導通式發光二極體的較佳實施例。 201117420 【主要元件符號說明】 2 平面導通式發光 232 第一指狀片單元 二極體 233 第一鲜塾 21 基材 234 第一連接段 22 發光單元 235 第一側延伸段 221 第一型彼覆層 236 中延伸段 222 第二型彼覆層 24 第二電極 223 電流擴散層 241 第二銲墊單元 224 底部 242 第二指狀片單元 225 台部 243 第二銲墊 226 接面層域 244 第二連接段 23 第一電極 245 第二側延伸段 231 第一銲墊單元The second electrode 24 is disposed on the top surface of the current diffusion layer 223 and electrically connected to the first type of cladding layer 222 , has a second pad unit 241 , and extends outward from the second pad unit 241 . a second finger pad unit 242 having a second fresh pad 243 spaced apart from each other on the side opposite to the side of the second pad-pad 233 and electrically connected by a wire bonding method. The second finger unit 242 has a first connection & 244 connecting the two second pads 243, and two extending from the second and second pads 243 to the β-weld 233, respectively. a second side extension 245, the distance from any of the first side extensions 245 to the adjacent first side extensions 235 and the intermediate extensions 236 is the same as the 'second welder' & The thickness of the second fresh slab 243 is greater than the second connecting section and the second side extending section 245 of the first finger piece unit 242. When the field first electrodes 23, 24 cooperate to supply electric energy, the current is laterally guided from the first-welding pad 243f-finger-sheet unit 242 via the current diffusion layer, and then flows down through the first 'di-type cladding'. The layer Π, and the junction layer domain 226, and the light generated by the photoelectric effect photon passes through the light-emitting unit 22 in the direction opposite to the substrate direction to emit light outwardly. 201117420 Since the thicknesses of the first and second soldering portions 233 and 243 of the first and second pad units 231 and 241 are larger than the first and second finger unit units 232 and 242, the portion having the highest luminance when the light is emitted forward is substantially Concentrating on the peripheral regions of the first and second finger segments 232, 242 surrounding the first and second electrodes 23, 24, and the closer to the end regions of the first and second side extensions 235, 245, the greater the brightness" then gradually The direction of the first and second pads 233, 243 is gradually lowered, that is, the current is circulated downward from the peripheral region corresponding to the second electrode 24, but by the ... pads 233, 243 and the first and second fingers The patch units 232, 242 have a corresponding thickness difference from each other, and no longer concentrate only on the peripheral region corresponding to the second electrode 24, and therefore, the forward light is more uniform, and also because the current is not The concentrated circulation always occurs in a specific region, and the actual working life of the planar conduction light-emitting diode 2 of the present invention is closer to the theoretical design value. • In the above description, the present invention mainly forms a light-emitting unit on a substrate, and when the first and second electrodes are formed, the thickness of the first and second orders S of the second electrode formed is greater than that of the first, The thickness of the two-finger-like piece unit, and the thickness of the first- and second-finger-like piece units also have a predetermined corresponding difference, and the first and second units and the first and second fingers are different by thickness. : a chip unit, such that the current is still self-corresponding to the area around the second electrode: pass, but by the difference between the first and second recordings and the second finger unit == corresponding thickness difference The more uniform dispersion is no longer set = the peripheral region of the pole 'and thus allows the overall forward light to be more radiant 'at the same time' and because the current does not flow intensively, the practical work of the planar conduction light-emitting diode of the present invention The life is closer to the theoretical design value 10 201117420 'Improve the shortcomings of the current plane guide ii _v i , Λ , , τ return 逋-type light-emitting diode light is not uniform enough 'to achieve the purpose of the present invention. The above is a preferred embodiment of the present invention, and it is not intended to limit the scope of the practice of the present invention, that is, the simple equivalent change of the patent scope and the description of the invention according to the invention. Modifications are still within the scope of the invention. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a top plan view showing a conventional planar conduction light-emitting diode 9. FIG. 2 is a cross-sectional view, and a conventional planar light-emitting diode is illustrated together with FIG. 3 is a top view showing a preferred embodiment of the planar light-emitting diode of the present invention having uniform forward light emission; and FIG. 4 is a cross-sectional view showing the plane of uniform forward light emission of the present invention together with FIG. A preferred embodiment of a derivative light emitting diode. 201117420 [Description of main components] 2 Planar guide light 232 First finger unit diode 233 First fresh 塾 21 Substrate 234 First connection section 22 Light-emitting unit 235 First side extension 221 First type Layer 236 middle extension 222 second type second layer 24 second electrode 223 current diffusion layer 241 second pad unit 224 bottom 242 second finger piece unit 225 stage portion 243 second pad 226 junction layer field 244 Two connection segments 23 first electrode 245 second side extension 231 first pad unit
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