201110830 、發明說明： 【^明所屬之技術領域】 ’特別是指一種具有高 置。 本發明係與電漿生成技術有關 解離率的賴缝妓及其應用裳 【先前技術】201110830, invention description: [^ Ming Ming belongs to the technical field] ‘Specially refers to a type with a high setting. The present invention relates to a dissociation rate of plasma generation technology and its application. [Prior Art]
曰在半導體製造中，電㈣程廣泛應用如以各種摻雜劑 ^晶圓進行植人或者應祕導電材料、半導體材料或介電 材抖之沈積錢__程；尤其在元件尺寸愈驅小型化 的製程條件下’以M〇s元件結構為例，形成問極介電層 之製作品肢對元件表__因素，若直接在石夕晶 材"^習用熱成長方式氧化形成閘極介電層，會因高溫沈 積^程造成介電層下方元件通道結構内的摻雜物擴散；因 此’皿沈積大多不㈣來形成元件通道層上的沈積膜 層，普遍需配合以電漿辅助方式（如PECVD)在大約350 °C至約45〇t的環境下加以沈積形成閘極介電層。 至於電f：的-般製造方式，可藉由直流(DC)偏壓或交 流射頻(RF)偏壓下的電場職。典型直紐f產生電漿方 法係在一密封之反應室(chamber)充滿待要放電之氣體，並 插入二金屬電極以提供相對的偏壓；當反應室内氣壓條件 到達，且當直流電源電壓高於氣體之擊穿電壓時，電子通 過氣體为子或原子時將原子中的電子解離出來，因此氣體 發生電離製造出帶正電的離子電漿，且解離後之電子能量 持續累積並繼續撞擊其他氣體分子或原子而製造出更多的 201110830 離子電漿；如此對於PECVD製程而言，便可藉由電漿的 撞擊能量提高製程元件表面的活性，以及使電漿反應生成 的離子或中性原子參與沈積反應形成沈積物。直流放電法 之優點在於設備結構簡單，造價較低；惟，其缺點係電離 度低，當反應氣體與電漿的能量轉換過程中，反應室内壁 同時因沈積反應的持續進行而形成一層氧化層薄膜，對於 較不易解離的反應氣體分子而言，雖可使用較高偏壓產生 更大電漿能量來進行如HDP — CVD之沈積步驟，然強烈的 離子撞擊將肇使反應室内壁的氧化層更加容易剝落，從而 造成嚴重的電漿污染；再者，電極容易受電漿中帶電粒子 轟擊，使得電極使用壽命減少，並且從電極濺射出來之原 子會對電漿產生污染。 若以交流射頻(RF)電場產生電漿氣體的方式而言，在 射頻放電狀況下，大部份的電子由於高頻操作，使得在半 個週期内沒有足夠的時間移動至電極板上，致使這些電子 在電極板_振盪’並與氣體分子發生碰#，產生位於電 極板間的·氣體；如此·較為遠離電極位置的電聚來 解離反應氣體分子’可避紐以上述直 f污染情形，產生較純淨之電漿。然，交流射頻之 ^要^提供電子贼體分子發生碰撞，對於較難解離的 =刀子，難·提供加熱裝㈣魏體分子碰撞以加 ==如此應Γ沈積製程時，等同於高溫輔助的解離 層下方之元件通道結構，囉發线道結構 = 201110830 散問題。當然，若不另提供加熱裝置以辅助解離，則需等 待較長的f程時間較乡的碰歧應魏，目叫低製程 效率。縱使不考慮製程效率因·*·，較早解離的電聚氣體於 兩電極中央會形成高濃度的聚集，使聚集所產生之阻 抗(Impedance)大於兩端所產生之阻抗，如此因電漿阻抗不 E配而產生㈣條件的能量反射現象，則造成錢能量損 耗無法符合實際製程所需之電漿能量；或者因兩電極間無 法產生均勻的電漿，致使在沈積製程反應中’製程元件之 沈積表面形成不一致之沈積效果。 另有以微波放電產生電漿氣體的方式，可同樣提供於 低溫％境產生電漿氣體；一般採用波導管或天線將微波電 源產生之微波耦合至放電管内，使微波能量轉換為待解離 氣體之内能，進而激發待解離氣體使之電離；且初始管内 氣體經微波能量激發之少量解離電子被微波電場加速，得 以與尚未解離之氣體分子發生非彈性碰撞，因此反應氣體 • 在上述狀態下之微波電漿系統中可解離成高密度電漿，具 有相當高的解離率。但此種微波電漿系統應用於沈積製程 時’沈積面積卻受限於耦合微波電場的波導管或天線結 構，僅波導管開口範圍產生的微波電場得以有效提供電子 加速並解離反應氣體；一旦波導管口徑小於待沈積基底之 面積時’遠離波導管口徑的基底表面則難有解離氣體的反 應沈積物生成’同樣使製程元件有不一致之沈積效果；至 於若以加寬波導管口徑或加大天線結構方式形成較大範圍 的微波電場’除了增加系統成本外，更有高輻射的風險。 201110830 【發明内容】 因此本發明之主要目的乃在於提供—種高解離率電 装產生方法’可提高電漿應用製程之製程效率，使反 體具有高轉度並鼓高純度的電漿離子。 為達成前揭目的，本發明提供-種電漿產生方法，將 反應氣體先後通人-直流f極裝置及—交流電極I置，使 反應氣體經該直流電極I置之直流電壓解離產生電激，該 直机電極裝置未解戰未完全解離之反應氣體經該交流電 極裝置之射頻交流電壓解離產生電漿。 本發明之另-目的乃在於提供—種產生裝置，可 以低成本的製程設傭構產生高效率的製程反應電裝。 為達成前揭目的，本發明提供一種電漿產生裝置，係 於一反應腔體内設置一直流電極裝置及一交流電極裴置y 該交流電極裝置設於該反應腔體周圍且對應位於該直流電 極裝置下方；該直流電極裝置周圍設有至少一進氣管路， 用以自該反應腔體外部導入反應氣體使反應氣體經該直节 電極裝置之直流電壓解離，該直流電極裝置未解離^未=半导体In the semiconductor manufacturing industry, the electric (four) process is widely used, such as the implantation of various dopants and wafers, or the deposition of conductive materials, semiconductor materials or dielectric materials, especially in the component size. In the process conditions of the process, the structure of the M〇s element is taken as an example to form the body-to-component table of the electrode layer. If it is directly in the stone crystal, it is oxidized to form a gate. The dielectric layer will cause dopant diffusion in the component channel structure under the dielectric layer due to high temperature deposition; therefore, most of the dish deposition does not (4) form the deposited film layer on the component channel layer, which is generally required to be assisted by plasma. A method such as PECVD is deposited in an environment of about 350 ° C to about 45 〇 to form a gate dielectric layer. As for the general manufacturing method of electric f:, the electric field can be biased by direct current (DC) bias or alternating current (RF) bias. A typical straight-state f-generating plasma process is filled in a sealed chamber filled with a gas to be discharged, and inserted into a two-metal electrode to provide a relative bias; when the gas pressure condition in the reaction chamber arrives, and when the DC power supply voltage is high At the breakdown voltage of a gas, electrons dissociate electrons in the atom when the gas is a child or an atom, so that the gas is ionized to produce a positively charged ion plasma, and the dissociated electron energy continues to accumulate and continues to hit other More molecules of 201110830 ion plasma are produced by gas molecules or atoms; thus, for the PECVD process, the activity of the surface of the process element can be increased by the impact energy of the plasma, and the ions or neutral atoms generated by the plasma reaction can be generated. Participate in the deposition reaction to form sediments. The advantage of the DC discharge method is that the structure of the device is simple and the cost is low; however, the disadvantage is that the degree of ionization is low. During the energy conversion process between the reaction gas and the plasma, the interior wall of the reaction chamber simultaneously forms an oxide layer due to the continuous deposition reaction. Thin film, for reactive gas molecules that are less dissociable, although higher bias voltage can be used to generate larger plasma energy for deposition steps such as HDP-CVD, strong ion impact will cause oxide layer inside the reaction chamber wall. It is easier to peel off, causing serious plasma pollution; in addition, the electrode is easily bombarded by charged particles in the plasma, so that the electrode life is reduced, and the atoms sputtered from the electrode will pollute the plasma. In the case of alternating current radio frequency (RF) electric field to generate plasma gas, in the case of radio frequency discharge, most of the electrons do not have enough time to move to the electrode plate in half cycle due to high frequency operation. These electrons oscillate in the electrode plate and collide with the gas molecules to generate a gas located between the electrode plates; thus, the electropolymerization that is farther away from the electrode position dissociates the reaction gas molecules from the above-mentioned direct f pollution. Produce a purer plasma. However, the exchange of radio frequency ^ ^ ^ to provide electronic thief molecules collision, for the more difficult to dissociate = knife, difficult to provide heating equipment (four) Wei body molecular collision to add = = so should be the deposition process, equivalent to high temperature assisted The component channel structure under the dissociation layer, the burst line structure = 201110830 scattered problem. Of course, if a heating device is not provided to assist dissociation, it is necessary to wait for a longer f-time to be compared with the hometown, which is called low process efficiency. Even if the process efficiency is not considered, the earlier dissociated electropolymer gas will form a high concentration in the center of the two electrodes, so that the impedance generated by the aggregation is greater than the impedance generated at both ends, so that the plasma impedance The energy reflection phenomenon that does not produce E (4) conditions causes the energy loss of the energy to fail to meet the plasma energy required by the actual process; or because the uniform plasma cannot be generated between the two electrodes, causing the process component in the deposition process reaction The deposition surface forms an inconsistent deposition effect. In addition, the method of generating plasma gas by microwave discharge can also provide plasma gas at a low temperature %; generally, a microwave or a microwave is used to couple the microwave generated by the microwave power source into the discharge tube to convert the microwave energy into a gas to be dissociated. Internal energy, which in turn excites the gas to be dissociated to ionize; and a small amount of dissociated electrons excited by the microwave energy in the initial tube is accelerated by the microwave electric field to inelastically collide with the gas molecules that have not been dissociated, so the reaction gas is in the above state. The microwave plasma system can be dissociated into high-density plasma with a relatively high dissociation rate. However, when the microwave plasma system is applied to the deposition process, the deposition area is limited by the waveguide or antenna structure of the coupled microwave electric field. Only the microwave electric field generated by the waveguide opening range can effectively provide electron acceleration and dissociation reaction gas; once the wave When the diameter of the conduit is smaller than the area of the substrate to be deposited, 'the surface of the substrate far from the diameter of the waveguide is difficult to generate the reaction deposits of the dissociated gas', which also makes the process components have inconsistent deposition effects; as for widening the waveguide or increasing the antenna The structural mode forms a large range of microwave electric fields', in addition to increasing system cost, there is a higher risk of radiation. SUMMARY OF THE INVENTION Accordingly, it is a primary object of the present invention to provide a method for producing a high dissociation rate electrical appliance which can improve the process efficiency of a plasma application process, and to have a high degree of rotation and a high purity plasma ion. In order to achieve the foregoing object, the present invention provides a plasma generating method, wherein the reaction gas is sequentially passed through a human-DC f-pole device and an AC electrode I, so that the reaction gas is dissociated from the DC voltage of the DC electrode I to generate an electric shock. The straight electrode device does not solve the problem that the reaction gas that is not completely dissociated is dissociated by the RF voltage of the AC electrode device to generate plasma. Another object of the present invention is to provide a production apparatus which can produce a highly efficient process reaction package with a low cost process. In order to achieve the foregoing object, the present invention provides a plasma generating apparatus in which a DC electrode device and an AC electrode device are disposed in a reaction chamber. The AC electrode device is disposed around the reaction chamber and corresponding to the DC. Under the electrode device; at least one inlet pipe is disposed around the DC electrode device for introducing a reaction gas from the outside of the reaction chamber to dissociate the reaction gas from the DC voltage of the straight electrode device, and the DC electrode device is not dissociated. Not =
王解離之反應氣體向下流至该父流電極裝置經射頻交流電 壓解離產生電漿。 'L 本發明之另一目的乃在於提供一種電漿輔助氣相沈積 裝置，使用以產生電漿之反應氣體有效完全解離，以^得 高均勻度的反應沈積物。 為達成前揭目的’本發明提供一種電漿輔助氣相沈積 201110830 裝置L反應腔體内設置—基板、—直流電極裳置及 -交流電崎置；斷應腔體設有乡數個進氣管路， 用以自該反應腔體外部將反應氣體導人該直流電極裝置以 進行直流㈣解離。該交流電極裝置用以將通過該二電極 板未解離及未完全聽之反錢贿離，麟後之電聚離 子可先經較流電極裝置之射頻電場橫向縫位移，再以 物理反應、化學反應或兩者混和之反應擇—者於該基板上 形成均句分佈之沈積物。 【實施方式】 以下，纽配合若干圖式列舉對應之較佳實施例，用以 對本發明德賴件及功效作進—步說明，其情用各圖 式之簡要說明如下： 第-圖係為本發明第一較佳實施例所提供之結構示意 pal · 圖， 第-圖A係為上述第—較佳實施例所提供之上電極板 之底視圖’第二圖B為下電極板之底視圖； 第二圖係為本發明第二較佳實施例所提供之結構示意 圖0 "月參閱如第-圖所示，為本發明第一較佳實施例所提 =之-種電漿產生裝置1，係於—反應腔體1G内設置一直 流電極|置20、-交流電極裝置3()、—基板4()以及多數 個進氣管路50，其中： 201110830 該直流電極裝置20提供反應氣體進行直流放電反 應，以本實施例所提供之二電極板21、22為例，係鄰近該 反應腔體1 〇之一頂部1 〇 1分別以上、下平行並列，且電性 連接該電漿產生裝置1外部之一直流電壓源200 ;配合第 二A及二B圖參照，該二電極板21、22穿設有多數個氣 孔，其中穿设上電極板21的為進氣扎210，穿設下電極板 22的為出氣孔220，進氣孔210用以連接該進氣管路5〇 將反應氣體導入該二電極板21、22之間，經電離反應所產 生的電漿離子可再撞擊陰極結構的下電極板22以產生二 次電子提供反應氣體解離’或者直接經由下電極板22的周 緣及出氣孔220向下流出。 該交流電極裝置30設於該反應腔體1〇相對之二側邊 102鄰近該下電極板22與該基板40,係電性連接該電漿產 生裝置1外部之-射頻交流 3⑻’可產生具有特定頻 率以上之射頻交流電壓。t反應氣體於該直流電極裝置2〇 中未經解離或未完全解離即流出至該交流電極裝置3〇 時，該交流電極裝置30之射頻電場可將反應氣體進一步進 打解離’射頻電場作用於解離反應所產生之電漿離子可使 其限制於對應該直流電極|置2 Q下方的空間來回振堡；因 此由該技電極裝置3G解離出的―以及經該直流電極 裝置20解，產生的錢’可於該交流電極裝置川中來回 振盪產生板向位移，因而使通過該交流電極裝置％之電聚 具有均勻的分佈。 該基板40為待與魏直接或間狀應的加王件，係設 201110830 於加工座41上’該加工座41可藉由數個控制線路42 連接該電激產生裝置1外部之自動控制系統做升降、傾斜 或旋轉等位移’當然越多的控制線路可具有多維的控制精 度’以提供該加工座41越高精密度的調整量，藉此得以調 整該基板40以至最適之加工位置。 因此當該直流電壓源200所產生之高、低電位分別導 通至該二電極板21、22後’待解離之反應氣體自該進氣管 籲 路50及上電極板21的進氣孔210流入該二電極板21、22 之間；反應氣體分子或原子受到直流電壓的激發使氣體分 子或原子中的電子產生電離反應，同時製造出帶正電的電 聚離子。魏離子經由下電極板22的周緣及氣孔22〇流 出，在通過該交流電極裝置30時橫向來回振後，可使電聚L 在抵達該基板40前分佈均勻，不會僅對應該電極板”的 周緣及氣孔22〇的位置分佈；至於若原本輸入該直流電極 裝置20的反應氣體因流量、流速過大等因素，而未來得及 _ 參與電離反應或未完全獅，同樣可經由下電極板22的周 ，及氣孔220流出，在通過該交流電極裝置3〇時由射頻電 場的作⑽以完全解離騎際製㈣祕子條件。 由上述可知，本發明所提供之電漿產生裝置1同時提 供一種電漿產生方法，讓待解離之反應氣體先後藉由如該 直肌電極襄置20的直流電壓放電解離及該交流電極裝置 3〇的射頻交流錢解離，以產生高純度及均勻度的電聚離 子可應用至實際製程需求，例如於該電浆產生裝置1之 基板4〇上進行如離子佈植、沈積或钱刻等製程；或者可進 201110830 -步加入其餘製彳i輔助&備或條件氣體，將電聚離子經物 理或化學反應以進行如沈積或蝕刻等製程。如此之電漿產 生方法在初步進行直流電壓放電解離時，所使㈣電壓條 件僅需達到反應氣體之擊穿電壓條件，而不需使用更大電 衆能量而造成如制般之反應室内壁受到強烈的離子撞 擊，致使反應室内翻落；亦可避免電極受錢中帶電粒 子高能量的祕，歧電極使料命減少或從電極賤射出 來之原子會對«產生污染。再者，已由直流電壓完全解 離後之電t、_技電極裝科，轉分料重新均勾配 ，後再通過’ g此當未解離或未完全解離的氣體進行射頻 父流電壓的第二階段解料，不致發生㈣高濃度的聚集 於反應室中間，因而可避免產生如制電漿阻抗不匹配或 電漿濃度不均所造成的製程缺陷。 當然，本發明所提供之電梁產生方法並不限制以上述 實施例之電漿產生裝置！為應用，除了以該直流電極裝置 20及^父流f極裝置3〇進行二階段解離步驟所需亦可 同别述之加人其餘g程輔助設備或條件氣體，將電聚離 子、^物理或化學反應處理以進行如沈積或钱刻等製程。再 f，以本發明之主要技術手段而言該直流電極裝置 -該些氣孔210、220亦非必要的設置，請參照如第三圖所 τ係為本發明第二較佳實施例所提供一種電毁產生裝置 2，具有-直流電極裝置6〇、數個進氣管路7〇以及同^上 槪置3ΰ姻第-崎施例所 201110830 ，些進孔s路70沿該直流電極裝置6〇邊緣設置 二繼該直流電極裝置6〇側邊直接流入該二電極板 之間，因此該直流電縣置⑼省略了如上 例之進氣孔及出氣孔的 过實轭 電極裝置6G產生卜!Γ 求’·反應氣體於該直流 向流㈣二電触賴，錢離何順著氣流方 〇 、62，至於未解離及未完全解離之;5 =體_可騎氣流方向流㈣二電極板 = 流電極裝置3〇具有同於上述實施狀魏，可藉= =用’將已解離之電激離子域為具有均勾的電： :Γ樣可受射頻電場作嶋為具有均‘::: 故兴tUT者’僅林發明之雜可竹施例而已， 變:，==明書及申請專利範圍所為之等效結構 〜匕3在本發明之專利範圍内。 201110830 【圖式簡單說明】 第一圖係為本發明第一較佳實施例所提供之結構示意 圖； 第二圖A係為上述第一較佳實施例所提供之上電極板 之底視圖，第二圖B為下電極板之底視圖； 第三圖係為本發明第二較佳實施例所提供之結構示意 【主要元件符號說明】 101頂部 20、60直流電極裝置 1、2電漿產生裝置 10反應腔體 102側邊 21、22、61、62電極板 210進氣孔 220出氣孔 300射頻交流電源 41加工座 50、70進氣管路 30交流電極裝置 40基板 42控制線路The reaction gas of Wang dissociation flows down to the parent flow electrode device to be dissociated by radio frequency alternating current to generate plasma. Another object of the present invention is to provide a plasma-assisted vapor deposition apparatus which uses a reaction gas which produces a plasma to be effectively completely dissociated to obtain a highly uniform reaction deposit. In order to achieve the above objective, the present invention provides a plasma assisted vapor deposition 201110830 device L reaction chamber setting - substrate, - DC electrode skirting and - AC electric field setting; The path is used to direct the reaction gas from the outside of the reaction chamber to the DC electrode device for DC (four) dissociation. The AC electrode device is used for bridging the non-dissociated and incompletely listening through the two-electrode plate, and the electric polyion of the lining can be displaced laterally by the RF electric field of the comparative electrode device, and then physically reacted and chemically The reaction or a mixture of the two is selected to form a deposit of a uniform distribution on the substrate. [Embodiment] Hereinafter, a preferred embodiment of the present invention will be described with reference to a plurality of drawings for making a step-by-step description of the present invention, and a brief description of each of the drawings is as follows: The structure of the first preferred embodiment of the present invention is illustrated as a bottom view of the upper electrode plate provided in the above-described preferred embodiment. [Fig. 2 is the bottom of the lower electrode plate. The second diagram is a schematic diagram of the structure provided by the second preferred embodiment of the present invention. The first embodiment of the present invention is as shown in the first embodiment. The device 1 is provided with a DC electrode in the reaction chamber 1G, a 20, an AC electrode device 3 (), a substrate 4 (), and a plurality of intake lines 50, wherein: 201110830 The DC electrode device 20 provides The reaction gas is subjected to a DC discharge reaction, and the two electrode plates 21 and 22 provided in this embodiment are taken as an example, and the top portion 1 〇1 adjacent to one of the reaction chambers 1 is parallel and parallel, and electrically connected. a DC voltage source 200 external to the slurry generating device 1; Referring to FIGS. 2A and 2B, the two electrode plates 21 and 22 are provided with a plurality of air holes, wherein the upper electrode plate 21 is an air inlet 210, and the lower electrode plate 22 is an air outlet 220. The hole 210 is connected to the inlet line 5, and the reaction gas is introduced between the two electrode plates 21, 22. The plasma ions generated by the ionization reaction can further impact the lower electrode plate 22 of the cathode structure to generate secondary electrons. The reaction gas is dissociated or supplied directly downward through the periphery of the lower electrode plate 22 and the outlet holes 220. The AC electrode device 30 is disposed on the opposite side of the reaction chamber 1 opposite to the lower electrode plate 22 and the substrate 40, and is electrically connected to the outside of the plasma generating device 1 - RF AC 3 (8)' can be generated RF AC voltage above a certain frequency. When the t reaction gas flows out to the AC electrode device 3〇 without dissociating or not completely dissociating in the DC electrode device 2, the RF electric field of the AC electrode device 30 can further dissociate the reaction gas from the RF electric field. The plasma ions generated by the dissociation reaction can be limited to the space that is opposite to the space under the DC electrode | 2Q; therefore, the solution is dissociated by the technical electrode device 3G and generated by the DC electrode device 20 The money 'can oscillate back and forth in the AC electrode device to generate a plate-direction displacement, thereby making the electropolymerization through the AC electrode device have a uniform distribution. The substrate 40 is a king member to be directly or indirectly connected with Wei, and is provided with a 201110830 on the processing base 41. The processing seat 41 can be connected to the external control system of the electric excitation device 1 by a plurality of control lines 42. Displacement, tilting or rotation, etc. 'Of course, the more control lines can have multi-dimensional control accuracy' to provide a higher precision adjustment of the machining seat 41, thereby adjusting the substrate 40 to the optimum machining position. Therefore, when the high and low potentials generated by the DC voltage source 200 are respectively conducted to the two electrode plates 21 and 22, the reaction gas to be dissociated flows from the intake pipe 50 and the intake hole 210 of the upper electrode plate 21. Between the two electrode plates 21, 22; the reaction gas molecules or atoms are excited by a direct current voltage to cause ionization reaction of the gas molecules or electrons in the atoms, and at the same time, positively charged electropolymer ions are produced. The Wei ions flow out through the periphery of the lower electrode plate 22 and the air holes 22, and after the lateral vibration of the AC electrode device 30, the electropolymerization L can be evenly distributed before reaching the substrate 40, and does not correspond only to the electrode plate. The circumferential position and the position distribution of the pores 22〇; as long as the reaction gas originally input to the DC electrode device 20 is due to factors such as flow rate and flow rate, and may be obtained in the future, the ionization reaction or the incomplete lion may also pass through the lower electrode plate 22. Week, and the vent 220 flows out, and passes through the RF electric field device (10) to completely dissociate the riding (4) sedentary condition. It is known from the above that the plasma generating apparatus 1 provided by the present invention simultaneously provides a The plasma generation method is such that the reaction gas to be dissociated is dissociated by DC voltage discharge dissociation such as the rectus electrode assembly 20 and the RF exchange charge of the AC electrode device 3〇 to generate high-purity and uniform electropolymerization. The ions can be applied to the actual process requirements, for example, on the substrate 4 of the plasma generating device 1 such as ion implantation, deposition or money engraving; or can enter 20111 0830 - Steps are added to the remaining 辅助i auxiliary & preparation or conditional gas, and the electropolymerized ions are physically or chemically reacted for processes such as deposition or etching. Such a plasma generation method is initially subjected to DC voltage discharge dissociation. The voltage condition of (4) only needs to reach the breakdown voltage condition of the reaction gas, without using more electric energy, causing a strong ion impact on the inner wall of the reaction chamber, which causes the reaction chamber to fall over; The secret of the high energy of the charged particles in the money, the atom that reduces the fate of the material or the atom that is ejected from the electrode will cause pollution. Furthermore, the electric electrode that has been completely dissociated from the DC voltage will be transferred to the electric electrode. The materials are re-matched, and then the second stage of the RF parental voltage is discharged by the gas that is not dissociated or not completely dissociated, so that no (4) high concentration gathers in the middle of the reaction chamber, thus avoiding Process defects caused by plasma impedance mismatch or uneven plasma concentration. Of course, the method of generating an electric beam provided by the present invention is not limited to the plasma of the above embodiment. For the application, in addition to the two-stage dissociation step of the DC electrode device 20 and the parent-fed device, the other two-stage auxiliary equipment or condition gas may be added, and the electro-polymerization ion is added. , physical or chemical reaction treatment to carry out processes such as deposition or money engraving. Further, in the main technical means of the present invention, the DC electrode device - the vents 210, 220 are also unnecessary settings, please refer to The figure τ is a second embodiment of the present invention, which provides an electro-destruction generating device 2, which has a DC electrode device 6〇, a plurality of intake lines 7〇, and a top-mounted device. In the example 201110830, the inlet holes s are provided along the edge of the DC electrode device 6 and then the side of the DC electrode device 6 直接 directly flows between the two electrode plates. Therefore, the DC power county (9) omits the above example. The through-hole and the venting hole of the yoke electrode device 6G generate 卜! Γ ' '········································································ Dissociation; 5 = body _ can ride the airflow direction (four) two The plate = flow electrode device 3〇 has the same structure as the above-mentioned embodiment, and can use == to use the electric shock ion field that has been dissociated as the electric energy with the same hook: :Γ can be subjected to the RF electric field as the mean ::: The singular tUT's only the invention of the invention can be changed, and the equivalent structure of the invention and the scope of the patent application is 匕3 within the scope of the patent of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic structural view of a first preferred embodiment of the present invention; FIG. 2 is a bottom view of the upper electrode plate provided by the first preferred embodiment; Figure B is a bottom view of the lower electrode plate; the third figure is a schematic structure of the second preferred embodiment of the present invention. [Main component symbol description] 101 top 20, 60 DC electrode device 1, 2 plasma generating device 10 reaction chamber 102 side 21, 22, 61, 62 electrode plate 210 intake hole 220 air outlet 300 RF AC power supply 41 processing seat 50, 70 intake line 30 AC electrode device 40 substrate 42 control circuit