201110180 六、發明說明： 【發明所屬之技術領域】 件作關於將可耐作回焊處理…合㈣絲元 件作表面格载在形成有 薄型化的保護元件 ㈣是曰曰片體的小型化、 瓷晶片體的*空 L、係關於將電p且發熱元件配設在陶 ““體的貝穿孔，將 ^ ^ ^ ^ , 守鳊子3又在背面側的保護元件及 使用該保5蔓疋件之保護裝置。 【先前技術】 :測因被保護機器的過電流所產生的過大發熱、或感 應周圍溫度的異常過熱而進行作動的非復原型保護元件， :以預疋的動作溫度進行作動來遮斷電路，俾以達成機器 /、例而s，有一種保護元件係藉由感測在機器 所產生的異常的訊號電流來使電阻發熱，以該發熱而使炼 絲元件進行作動。在日本特開平…1 53367號公報（專利 文獻1)及日本特開平08_16199〇號公報（專利文獻2)中 揭不一種採用將異常時發熱的電阻設在陶瓷基板上的膜電 阻的保護元件、及利用該保護元件來防止以鋰離子二次電 池的過充電模式在電極表面所生成的樹枝狀突起 (dendrite)所造成的性能劣化或著火、或防止充電時電 池被充電至預定電壓以上的保護襞置。 通常，在攜帶式資訊終端機器中，係在主電源利用保 存特性或耐漏液性優異的高密度能量的鋰離子二次電池或 鋰聚合物二次電池，但是由於能量密度高，因此在異常時， 201110180 該能量被-舉放出而發生危險狀態的可能性高。為了防止 在如此二次電池的過充電及過放電而確保安全，設有復原 型與非復原型之雙重保護電路，如曰本特開平ι〇 〇謂 號公報（專利文獻3)係揭示具備有：當電池電壓超過設 定電壓時即遮斷充電電流的復原型保護電路、及該保護電 路因某些原因而未進行作動時所被利用的溫度溶絲的非復 原型㈣電路的保護裝置。關於附電阻的溫度炼絲，係在 日本特開m5-129352號公報（專利文獻4)揭示在絕緣 基板使用玻璃環氧樹脂而達成低價格化的保護元件，在日 本特開2005-15嶋號公報（專利文獻5)揭示使用無鉛 可熔σ金之附電阻的熔絲。此外，日本特開2006_221919 遽公報（專利文獻6)#示在絕緣基板内層積發熱用電阻 體在§玄電阻體上的絕緣基板設置可炫金屬片的附電阻的 熔絲》 (先前技術文獻） (專利文獻） (專利文獻1)曰本特開平〇7_1 53367號公報 (專利文獻2)曰本特開平08-1 61 990號公報 (專利文獻3)日本特開平10-056742號公報 (專利文獻4)日本特開20 0 5-1 29 352號公報 (專利文獻5)日本特開2005-1 50075號公報 (專利文獻6)日本特開2006-221 91 9號公報 【發明内容】 4 201110180 (發明所欲解決的課題） 近年來’隨著小型銘叙 杜化主+ 移動pc的急速普及，圖求表面安裝 技術手法的利用或所使 ^ ^ 更用的電池組的小型化/薄型化，保 6 mm斷在&向。前述專利文獻卜2及 提’’’、：用某種合金的熔絲元件與電阻膜的組合有所 =表=任一者均在基板的水平方向，亦即沿著基板 的主表面的方向形成有電 # 肤遇帘，對該電阻膜係在異 韦時施加電池電壓，因此 f該電壓乾圍，必須以具有概度 的面積的方式進行吟古士，+ 在水平方向的尺寸縮短方面存有 界限。此外，專利文獻R __ 锻… ㈣文獻5所不之附電阻的熔絲係在陶曼製 絕緣基板的表面安梦罝 裝早體或2個低熔點可熔合金熔絲元 ，在背面連同引腳一起安裝厚膜電阻之發熱元件所構 成^該附電阻的溶絲中，可溶合金係在平板的落狀態下 被女裝在基板上的電極間，在背面係將膜電阻設在較寬廣 的面因此必然地所需安裝面積較大，而對作為保護元 件的安裝需要較大的空間。因此，在應用在被要求小型/ 薄型化之攜帶式資訊機器等時會產生不良情形，並且在組 裝：製造上會殘留問題。另-方面，在形成膜狀電阻體時， :氧化釕系糊膏進行印刷’難以以超㉟8〇rc的溫度進行 k成=仵均一厚膜電阻，同時在特性面獲得所希望的電阻 値，厚膜電阻的修整調整變成為費事的作業，而難以低成 本化。此外，電阻膜在體積上較小，耐電力愈小，則愈無 法使電阻膜烤印在有機基板。此外’由於形成在安裝拉出 用引腳的背面側’因此變得需要進行絕緣處理而無法提供 201110180 滿足的小型化/薄型化 的低… 化的保“件’難以達成精簡且有效 的低逯面化。因此，以 w双 件而士，^ *足的動作溫度進行作動的保護元 。’ -#包含製造加工性亦獲# St良之伴護元件 及使用其之機器電路用保«置之提f 件 因此’本發明係鑑於上述缺點而被提出者，著重在曰 片基板的貫穿：?丨肉财恶‘ Βθ 可炫人杯 1且發熱兀件’將耐作回焊處理的 I 料元件作表面搭載在形成錢案電極的陶究基 板上，將複數元件在總 s ^ ^ 土 傻作日日片分割而達成小型化 ' 之晶片類型保護元件之提供為其目的。 =發明的其他目的係提供一種在陶究基板的貫穿孔配 §又發熱心牛，將導出端子設在背面側的保護元件及使用令 保護元件之電池組等之保護裝置。具體而言，上述本發明 的其他目的係提供一種在陶究晶片體的其中一面配設可炫 合金溶絲7〇件、在另一面配設導出用的電極部或引腳，並 且在开y成於陶免晶片體的貫穿孔配置電阻發熱體之新穎且 經改良後的保護元件，提高製造的簡化與作業的效率性， 兼顧低成本化與小型化，達成性能面之提升與安裝空間之 有效活用的新且經改良之保護元件及使用其之保護裝 置。 ' (用以解決課題的手段） 藉由本發明，提供一種保護元件，其具備有：具有複 數個貫穿，在其中一個被埋設有電阻發熱元件，在表背 兩面係配設有複數個圖案電極的陶瓷晶片體；在屬於該陶 6 201110180 兗晶片體之其中一面的表面圖案電極間利用表面安裝用 回焊焊料予以連接的可炫合金溶絲元件；及連接配置在屬 於該陶曼晶片體之另-面的背面圖案電極的複數個導出用 引腳、:將晶片體表背兩面的圖案電極間藉由導通貫穿孔或 導通半貫穿孔相連接，將電阻發熱元件的發熱直接或透過 陶竞材的熱傳導而將可、熔合金、熔絲元件升溫而使其作動。 在此’電阻發熱元件係配置纟i個貫穿孔的晶片電阻體或 具有職電阻値的電阻填充物。其電阻値係藉由填充在貫 『孔的電阻材料的選定予以調整。在表面側的可溶合金溶 絲7L件’選定出不受回焊處理影響而可保證與可炫合金平 R的熔斷動作的助熔劑材料而與背面側的圖案電極相連 如上所不，使配線構造簡化。亦即，可熔合金熔絲元 =不會因回焊處理㈣斷，回焊處理後亦不會損及炼絲 、,2者此外，熔絲元件係亦可視需要而由2個以上的可 、:。金所構成’可將各自的可熔合金熔斷的溫度選定為相 同或不同的溫度。此外’較佳為導出用引腳由平角狀導體 所構成，將其平坦面焊接於另一面的圖案電極。 入具體而言作為熔絲元件的材料所被選定的金屬及可熔 ，金係有例如：97Bi —仏（255。〇、99.3BH.5Ag_0.2Cu 258 C ) > 97Bi-3Ag ( 262〇C ) ^ Bi ( 272〇C ) ^ 78Zn-22Al (275 C )、95Zn-5Al ( 382°C )、54Ge-46Al ( 424°C )等。 人 數字係表不合金的摻合率（重量％)。使用該等無鉛 5金的保護元件係可耐# 245。。以上之回焊焊接，因此可 作為表面安裝零件而與其他裝置同時總括焊接。201110180 VI. Description of the invention: [Technical field to which the invention pertains] The article relates to the reversible welding process, the (four) wire element is used as a surface carrier, and the protective element (4) which is formed into a thinner shape is miniaturized, *The empty space of the porcelain wafer body is related to the electric p and the heating element is disposed in the ceramic "", the shell perforation, ^ ^ ^ ^, the protection element of the scorpion 3 on the back side and the use of the protection Protective device for the piece. [Prior Art]: A non-restoring type protection element that measures excessive heat generated by an overcurrent of a protected device or abnormally overheated by an induced ambient temperature: operates at a pre-twisted operating temperature to interrupt the circuit In order to achieve the machine/example, there is a protection element that generates heat by sensing an abnormal signal current generated in the machine, and the heating element causes the wire-making element to operate. A protective element of a film resistor which is provided on a ceramic substrate by using a resistor which generates heat during abnormality, is disclosed in Japanese Laid-Open Patent Publication No. Hei. No. Hei. No. Hei. And using the protective element to prevent performance deterioration or ignition caused by dendrites generated on the surface of the electrode in the overcharge mode of the lithium ion secondary battery, or protection against charging of the battery to a predetermined voltage or higher during charging Set. In a portable information terminal device, a high-density lithium ion secondary battery or a lithium polymer secondary battery excellent in storage characteristics or liquid leakage resistance is used in the main power source, but since the energy density is high, the abnormality is caused. , 201110180 This energy is highly likely to be released and dangerous. In order to prevent over-charging and over-discharging of such a secondary battery, it is possible to provide a double-protection circuit of a regenerative type and a non-recovery type, such as the 曰本特开平平 〇〇 〇〇 ( (Patent Document 3) : A recovery type protection circuit that interrupts the charging current when the battery voltage exceeds the set voltage, and a protection device for the non-reset type (four) circuit of the temperature-dissolved wire that is used when the protection circuit is not operated for some reason. Japanese Patent Publication No. M5-129352 (Patent Document 4) discloses a protective element that uses a glass epoxy resin for an insulating substrate to achieve a low price, and is disclosed in Japanese Patent Laid-Open No. 2005-15. The publication (Patent Document 5) discloses a fuse using a lead-free fusible σ gold-attached resistor. In addition, Japanese Laid-Open Patent Publication No. 2006-221919 (Patent Document 6) discloses that a resistor for heat dissipation is laminated in an insulating substrate, and a fuse having a resistance of a metal plate is provided on an insulating substrate on a sigma resistor. (Prior Art Document) (Patent Document 1) Japanese Unexamined Patent Application Publication No. Hei No. Hei No. Hei No. Hei. Japanese Patent Laid-Open Publication No. 2005-15075 (Patent Document 6) Japanese Laid-Open Patent Publication No. Hei. No. 2005-221 91 No. In order to solve the problem of the miniaturization and thinning of the battery pack, the use of the surface mount technology or the use of the battery pack for the use of the surface mount technology has been rapidly promoted. Keep 6 mm broken in & The aforementioned patent documents 2 and 2', the combination of a fuse element and a resistive film of an alloy is used = Table = either in the horizontal direction of the substrate, that is, in the direction along the main surface of the substrate When the electric film is formed, the battery voltage is applied to the resistive film in the case of the different types of voltage. Therefore, the voltage must be dried in the manner of the area, and the size of the surface must be shortened in the horizontal direction. There are limits. In addition, the patent document R __ forging... (4) The fuses with the resistance of the literature 5 are attached to the surface of the Ottoman insulating substrate, or the two low melting point fusible alloy fuses. The heating element of the thick film resistor is mounted together with the foot. In the dissolved filament of the electric resistance, the soluble alloy is placed between the electrodes on the substrate in the falling state of the flat plate, and the film resistance is set on the back side in the wide area. The face thus necessarily requires a large installation area, and requires a large space for the installation as a protective element. Therefore, there is a problem in application when it is applied to a portable information machine that is required to be small/thinned, and there is a problem in assembly: manufacturing. On the other hand, when a film-like resistor is formed, the yttrium oxide-based paste is printed. It is difficult to perform k-form=仵 uniform thick film resistance at a temperature of 358 〇 rc, and at the same time, a desired resistance 获得 is obtained at the characteristic surface. The trimming adjustment of the thick film resistor becomes a troublesome work, and it is difficult to reduce the cost. Further, the resistive film is small in volume and the smaller the withstand power, the more the resistive film is baked on the organic substrate. In addition, since it is formed on the back side of the lead for mounting and pulling out, it is necessary to perform insulation treatment, and it is not possible to provide a reduction in size and thickness that is satisfied by 201110180. It is difficult to achieve a streamlined and effective low profile. Therefore, the protection element is operated by the action temperature of the double-piece, and the movement temperature of the foot is ''############################################################################### Therefore, the present invention has been proposed in view of the above disadvantages, focusing on the penetration of the sputum substrate: 丨 财 财 ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' The surface of the component is mounted on the ceramic substrate on which the sample electrode is formed, and the wafer element type protection element is obtained by dividing the plurality of components into a total of s ^ ^ soil. It is an object of the present invention to provide a protective device in which a through hole of a ceramic substrate is provided with a heat-sensitive heart, a protective element having a lead-out terminal on the back side, and a battery pack using the protective element. Another object is to provide an electrode portion or a lead for arranging a bright alloy wire on one side of the ceramic wafer body, and to provide a lead-out electrode on the other surface, and to open the yam into the wafer body. The hole is equipped with a novel and improved protection element for the resistance heating element, which improves the simplification of production and the efficiency of the work, and achieves both cost reduction and miniaturization, achieving a performance improvement and effective use of the installation space. A protective element and a protective device using the same. ' (Means for Solving the Problem) According to the present invention, there is provided a protective element comprising: a plurality of through-holes, one of which is embedded with a resistance heating element, on both sides of the front and back a ceramic wafer body having a plurality of pattern electrodes; and a bright alloy wire component connected by surface mount reflow solder between surface pattern electrodes belonging to one of the ceramic layers of the ceramic film; 201110180; and a connection arrangement a plurality of lead-out pins of the back-side pattern electrode belonging to the other side of the Tauman wafer body: borrowing between the pattern electrodes on both sides of the wafer body The conduction through hole or the conduction through hole is connected, and the heat of the resistance heating element is directly or through the heat conduction of the ceramic material, and the meltable alloy and the fuse element are heated and actuated. Here, the resistance heating element is disposed 纟i a through-hole wafer resistor or a resistor filler having a resistance 。. The resistance 値 is adjusted by the selection of the resistive material filled in the hole. The soluble alloy lysate 7L on the surface side is selected The flux material which is not affected by the reflow process can be ensured to be connected to the pattern electrode on the back side without being connected to the pattern electrode on the back side, so that the wiring structure is simplified. That is, the fusible alloy fuse element = no Due to the reflow process (4), the refining process will not damage the wire, and the fuse element may be composed of two or more fuses as needed: The temperature at which the fusible alloy is blown is selected to be the same or different temperatures. Further, it is preferable that the lead for the lead is formed of a rectangular conductor and the flat surface is welded to the pattern electrode on the other surface. Specifically, the metal selected as the material of the fuse element and the fusible metal are, for example, 97Bi-仏(255.〇, 99.3BH.5Ag_0.2Cu 258 C ) > 97Bi-3Ag (262〇C ^ Bi ( 272〇C ) ^ 78Zn-22Al (275 C ), 95Zn-5Al (382 ° C), 54Ge-46Al (424 ° C), and the like. The number of people in the digital system is not alloyed (% by weight). The use of these lead-free 5 gold protective elements is resistant to #245. . The above reflow soldering can therefore be used as a surface mount component and soldered together with other devices.
S 7 201110180 此外，為了保證保護元件的平順的熔斷動作在可熔 合金表面必須要進行助熔劑塗佈，但是為了可耐上述回焊 mou上的動作溫度中亦不會由合金表面流下 而使熔斷動作更為確實，因此使用以下所示構成的高溫用 助熔劑。該助熔劑係在作為被覆劑而發揮功能的固形成 分，將耐熱性佳的色度_以上的淡色級酸改質水添松香 10〜50份、在此添加在軟化點為12〇〜19〇t之範圍内所選 擇的松香改質馬來酸樹脂或松香改質酚醛樹脂5〜30份、 作為分散改質劑的二十八酸蠟或硬脂酸胺或山蝓酸醯胺20 50份、作為防止熱鈍的促進劑的燻矽SHica) 或有機修飾燻矽〇. 5〜1(M分、作為抗氧化劑的二苯胺或二 環己胺0.5〜Η分加以加熱混合而形成為基材（在此使用另 卜添加作為活性劑之碳數4〜丨2的飽和直鏈脂肪族二羧酸 2〜10份、碳數4〜12的飽和直鏈胺基酸2〜1〇份、碳數i 3的脂肪族經基一元敌酉曼或經基二元㈣或經基三元叛 1 0伤’使其充分混練分散而成的固形助炫劑。 根據本發明之其他觀點，揭示一種保護裝置，係在具 備有.具有複數個貫穿孔的陶瓷晶片^;設在該陶瓷晶片 體的表背兩面的複數個圖案電極；焊料連接在表面之圖案 門的了炼合金熔絲元件；配置在複數個貫穿孔之中之 至夕個貫穿孔的電阻發熱元件；連接配置在陶瓷晶片體 之背面之圖案電極的複數個導出用引腳；及埋設在將表背 兩面之®帛t S間相連接之複數個f穿孔之中至少二個以 、貝穿孔的導電體’將發熱元件的發熱藉由陶瓷晶片體 8 201110180 的熱傳導’具有使可溶合金炼絲元件升溫感應而使其作動 的保護元件、及具有感測異常訊號的控制元件的非復原型 保護裝置中’控制元件係在發熱元件通上控制電流而使陶 究晶片體升溫’使安褒在其附近的熔絲元件作動。在此， 控制兀件係被使用在感測電池組用充放電控制電路之異常 狀態的過充電防止。 (發明效果） +藉由本發明’提供一種電阻發熱元件在陶究晶片體的 貫穿孔内以垂直方向予以配置形成，達成因水平方向的尺 寸短縮以致小型化與因省略 ^ 咱唂電阻膜厚以致薄型化的新穎保 護兀件。此外’在具有貫穿孔的陶瓷晶片體設置圖案電極， 在表面可財作回焊處理的可炼合金，熔絲元件、在背面設置 導出用電極部或引腳而使表背兩面的圖案電極間作貫穿孔 導通，因此，可使作為保護裝置的組入較為容易且簡化， 並且透過陶究晶片體的孰傳導 ”、、得v將發熱快迅傳至可熔合金 熔絲70件，將可熔合金的 1的落融迅迷化而使可熔合金熔絲元 件的預疋的作動更為確實。 —另一方面，在保護元件的可熔合金熔絲元件，由於選 疋不會因回焊處理而熔斷 …… 这斷在回焊處理後亦不損及熔絲功 月fc*的可嫁合金，因并古^ ^ ^ ^ ^著保護裝置的組裝所造成 的不良情形發生的減輕，達成因製造簡化所達成之作業性 的提升。將陶瓷晶片體的 - ^ ^ ^ U稭宙導電材的埋設而形成 為導通貫穿孔而將晶片體表 坪間的電極圖案相連接，可使S 7 201110180 In addition, in order to ensure a smooth fusing action of the protective element, flux coating must be applied to the surface of the fusible alloy, but it is not blown by the surface of the alloy in order to withstand the operating temperature on the reflow soldering mou. Since the operation is more reliable, the high-temperature flux having the composition shown below is used. The flux is a solid component that functions as a coating agent, and 10 to 50 parts of a light-colored acid-modified water having a heat resistance of chromaticity or higher is added, and the softening point is 12 to 19 〇. 5 to 30 parts of rosin-modified maleic acid resin or rosin-modified phenolic resin selected in the range of t, octadecanoic acid wax or stearic acid amine or decyl behenate 20 50 parts as a dispersion modifier , as a promoter to prevent heat blunt, smoked sputum SHica) or organically modified smoked sputum. 5~1 (M minutes, diphenylamine or dicyclohexylamine as an antioxidant, 0.5~ Η, heated and mixed to form a substrate (Additionally, 2 to 10 parts of a saturated linear aliphatic dicarboxylic acid having a carbon number of 4 to 丨 2 as an active agent, 2 to 1 part by weight of a saturated linear amino acid having a carbon number of 4 to 12, carbon a solid-type stimulant of a number i 3 of an aliphatic group-based unitary enantiomer or a trans-base binary (4) or a trans-group triad repelling 10' to cause it to be sufficiently kneaded and dispersed. According to other aspects of the present invention, a The protection device is provided with a ceramic wafer having a plurality of through holes; and is provided on both sides of the front and back sides of the ceramic wafer body a pattern electrode; a soldering fuse element connected to the pattern gate of the surface; a resistance heating element disposed in the plurality of through holes to the through hole; and a pattern electrode disposed on the back side of the ceramic wafer body a plurality of lead-out pins; and at least two of the plurality of f-holes connected between the two sides of the front and back sides, and the conductors of the shell-perforated heat-generating the heat-generating elements by the ceramic wafer body 8 201110180 Heat conduction 'There is a non-recoverable protection device that has a protective element that causes the soluble alloy wire-making element to heat up and actuate, and a control element that senses an abnormal signal. The control element is controlled by the heating element. The heating element is heated to cause the ampule to operate in the vicinity of the fuse element. Here, the control element is used to prevent overcharging of the abnormal state of the charge and discharge control circuit for the battery pack. + by the present invention 'providing a resistance heating element arranged in a vertical direction in the through hole of the ceramic wafer body, achieving a horizontal dimension Miniaturization and novel protection of thinning due to omitting the thickness of the resistive film. In addition, 'the patterned electrode is provided in the ceramic wafer body with the through hole, and the refinable alloy can be reflowed on the surface. The wire element is provided with a lead electrode portion or a lead on the back surface to electrically connect the pattern electrodes on both sides of the front and back sides. Therefore, it is possible to easily and simplify the assembly as a protective device, and to pass through the wafer body. Conduction", and v will pass the heat quickly to 70 pieces of fusible alloy fuse, which will make the melting of the meltable alloy 1 become more and more accurate and make the pre-twisting action of the fusible alloy fuse element more accurate. On the other hand, in the fusible alloy fuse element of the protection element, since the selection is not melted by the reflow process, the broken alloy does not damage the graftable alloy of the fuse function fc* after the reflow process. Due to the reduction of the occurrence of the malfunction caused by the assembly of the protective device, the workability achieved by the simplification of the manufacturing is achieved. By embedding the - ^ ^ ^ U-steel conductive material of the ceramic wafer body to form a through-via to connect the electrode patterns between the wafer body surfaces,
S 9 201110180 作為保護裝置的配線更為確實且容易。尤其，將發埶元件 的發熱藉由H日日片體的熱傳導傳至可炼合金料元件， 使可炼合金快迅升溫感應，因此可熔合金料元件係 到發熱元件的發熱而迅讳廡焚 •、叩処逑應答而確貫達成熔絲功能。而 且，發熱元件被埋設配置在貫穿孔内而以兩面與圖案電極 相連接，因此電阻發執违 货熟透過熱傳導良好的圖案電極或陶瓷 晶片體被傳達而使可熔合金熔絲元件溫度上升而確實且迅 速地使炫融溫度下的炫敝4隹彡七 j烙斷進仃作動。同時，達成貫穿孔内 的電阻發熱7L件加大耐電力，有利於因^有效活用以致 低背化或小型薄型化的實用效果。 【實施方式】 藉由本發明，為了將多數保護元件總括處理，預先備 安的陶瓷用生胚薄片係由複數個晶片體所構成，分別形成 有多數貫穿孔。在晶片體的兩面，係由以銀為主成分的糊 膏來形成有圖案電極。此外，在各晶片體的至少i個貫穿 孔被埋入有氧化釕系糊膏，設有所希望之電阻値的電阻發 熱體。燒結作業係在8 5 0 °C前後的溫度下進行約〇. 5小時 燒成，製作包含複數個晶片體的陶瓷製絕緣基板。該備妥 的陶瓷製絕緣基板係具備有多數個具有導通貫穿孔與電阻 發熱體的陶瓷晶片體。此外，陶瓷晶片體係包含有：形成 在兩面的複數個圖案電極、將表背的圖案電極作導通連接 的導通貫穿孔、及埋入有電阻發熱體的貫穿孔。所謂的晶 片區段’具體而言具備有配置在至少一個第1貫穿孔的電 10 201110180 阻發熱元件、及由至少二個以上的導通貫穿 2貫穿孔。在該區段安裝有料元件與導出引腳，；J 成為保護元件。 v 在陶究製絕緣基板的背面電極係經由回焊處理而被组 入有導出用引腳與熔絲元件。在眇， 在此熔絲凡件係無Pb的可 溶合金材’選定不會藉由回焊處理而炫斷，在回焊處理後 亦不會損及嫁絲功能之耐作回焊的材料，保有藉由回焊所 知之總括處理下的性能維持與安全性。具體而纟，由以下 =…金中選定…件。亦即一 (255。〇、.99.3Bl—0.5心.心（258。〇、97Bl_3Ag ( 262 C) ^Βι( 272°〇 ' Τ8Ζη-22Α1 ( 275〇C ) > 95Ζη-5Α1 (382C)、54Ge-46A1(4m：)。使用該等無錯合金的保 護元件係可料245U上的回焊焊接，因此以表面安裝 零件而言，可與其他裝置同時總括焊接。在此，各元件^ 號之前所標註的數字係表千人么 双予你录不合金的摻合率（重量％ )，元件 記號之後的括弧㈣表示溶析溫度^所被選擇的可溶合金 係形成為焊料羯狀而在表面側的圖案電 以固接。視需要，設在表〜… 口斗誶接予 在表月兩面的歿數導電性圖案 絕緣被覆，或將搭載配置在表面的可溶合金溶絲元件利用 陶瓷盍邛予以雄封。其中，蓋部所密封的覆蓋範圍係包含 陶£晶片體表面的圖案電極與可溶合金，其被覆面積係小 於陶竞晶片體全體的而接 .. 體的面積。此外，較佳為在導出用引腳係 使用平板狀銅線，藉此達成低背化，薄型化。 另一方面，為了保證可熔合金炫絲元件的平順溶斷動 11 201110180 作’在所使用的可熔合金表面設有助熔劑被膜。此時，助 熔劑材係必須可耐上述回焊溫度，而且在2 5 0。(：以上的動 作皿度中’亦不會由可熔合金表面流動而保持被覆狀態， 以使熔斷動作較為確實。為此而採用如下所示構成之高溫 用助熔劑。亦即，在作為被覆劑而發揮功能的固形成分， 將耐熱性佳的色度i 〇 〇以上的淡色級酸改質水添松香1 〇〜 5〇份、在此添加在軟化點為120〜19(rc之範圍内所選擇的 松香改質馬來酸樹脂或松香改質酚醛樹脂5〜3〇份、作為 刀散改質劑的二十八酸躐或硬脂酸胺或山崎酸醯胺2 〇〜5 〇 份、作為防止熱鈍的促進劑的燻矽（Fumed Sj丨ica )或有 機G飾燻矽〇. 5〜1 〇份、作為抗氧化劑的二笨胺或二環己 胺〇· 5〜1份加以加熱混合而形成為基材。在此使用另外添 加作為活性劑之碳數4〜12的飽和直鏈脂肪族二羧酸2〜 10份、碳數4〜12的飽和直鏈胺基酸2〜1〇份、碳數丨〜6 的脂肪族羥基一元羧酸或羥基二元羧酸或羥基三元羧酸2 1 0伤，使其充分混練分散而成的固形助溶劑。 本發明之上述保護元件係構成使用保護元件的電池組 用充放電控制裝置來作為其他實施形態的保護裝置。亦 即，為控制元件感測異常而將訊號電流通電至前述發熱元 件時，€ t阻發熱發纟而使可溶合金熔絲元件之低熔點可 熔合金熔斷的非復原型保護電路。其中，在此所使用的保 元件係由以下所構成.在上述兩面具有將複數個圖案電 極與兩面圖t電極相連接的導通用貫穿孔的陶-充晶片體； 及焊接在配置於該陶瓷晶片體表面側的圖案電極的可熔合 12 201110180 的晶片狀電阻體的發熱元 金溶絲元件及配置在貫穿孔内 件。 (實施例1) 以下’參照圖示，詳述本發明之第一實施例。本發明 之軸向引腳類型之保護凡件1()’在第^圖中以立體圖顯示 其表：側般’具備有：陶瓷晶片It 12、保護搭載在其表面 側的安裝零件的可溶合金溶絲元件或貫穿孔内的電阻發熱 元件等的封裝體的外殼蓋件14、及與背面側的圖案電極相 連接的導出⑽15〜17。在此，在陶曼晶片體12的兩面 形成有圖案電極’分別在表面側安裝可熔合金熔絲元件， 在月面側安裝導出用引腳、在晶片體貫穿孔安裝電阻發熱 元件帛2圖係在封裝體之外殼蓋件】4裝設前的狀態下顯 不立體圖，在設於陶瓷晶片體12的圖案電極21〜23上， 配置有將助熔劑被覆在纟面的彳熔合金熔絲元# 20，其兩 端與圖案電極22及23相焊接，中間點經由圖案電極21而 與電阻發熱兀件（未圖示）相連接。帛3圖係顯示第2圖 之可熔合金熔絲元件20安裝前狀態的立體圖。形成有：陶 瓷晶片體12之表面側中央的第1圖案電極21、在其兩側 有一對第2圖案電極22、23、形成在各圖案電極位置的第 1貫穿孔24、一對第2貫穿孔26、27。其中，在貫穿孔24 埋設配置有電阻發熱元件25 ’在貫穿孔26、27埋設配置 有導電素材28、29。其中，雖未圖示，但形成在該晶片體 12之背面側的3個圖案電極係與表面側圖案電極21〜23 13 201110180 相對應，與電阻發熱元件2 5及導雷I从。。 电京材28、29作電性連 接0 另一方面，裝設在背面側的導出用弓…15〜17為平角 銅線，被焊接在圖案電m日日片體12係在燒結處理前 的生胚薄片一 sheet)階段呈預定的形狀，被實施所 希望的貫穿孔的加工。在燒結處理後實施導電圖案的圖案 印刷，此外在貫穿孔内實施電阻體的填充處理。陶曼晶片、 體係同時總括形成多數預定的圖案電極或電阻體，在=定 的加工處理工程後作分離分割而形成為個別零件。陶究〇 片體若為維持良好絕緣性者，可為氧化㈣外的絕緣材曰，曰 而在該絕緣基板的各面以預定的形狀形成圖案電極。例 如，在預先決定的位置的2個貫穿孔設有導電體，使電阻 體"在於1個貝穿孔’與兩面圓案電極作電性連接。在此 所被注目的是配置在貫穿孔内的電阻體係除了在表面側並 不需要空間，而有助於小型薄型化以外，肖習知的膜電阻 體相比’可得較大的體積。因此，除了可加大耐電力以外， 可省略在膜狀電阻體中所需的烤印，而且不會產生外傷。 亦不s發生在處理上的意外或不良發生，可達長期安定化。 (實施例2) 本發月之其他貫施例係第4圖之立體圖所示的晶 f的If 7L件30。第4圖係顯示除了保護蓋件以外之 側的立體圖，在陶究晶片體32的表面裝設可熔合金熔S 9 201110180 Wiring as a protective device is more reliable and easy. In particular, the heat generation of the hairpin element is transmitted to the smeltable alloy material component by the heat conduction of the H-day film body, so that the heat-fusible alloy is rapidly heated and sensed, so that the fusible alloy material component is heated to the heat-generating component. Burning, smashing, and responding to the fuse function. Further, since the heat generating element is embedded in the through hole and connected to the pattern electrode on both sides, the resistance is transmitted through the pattern electrode or the ceramic wafer body having good heat conduction, and the temperature of the fusible alloy fuse element is increased. It is true and rapid to make the dazzling 隹彡 4隹彡7 j in the smelting temperature to break into action. At the same time, the resistance heating 7L in the through hole is increased to increase the withstand power, which is advantageous for the practical effect of reducing the thickness or reducing the thickness and thickness. [Embodiment] According to the present invention, in order to collectively process a plurality of protective elements, a ceramic green sheet for pre-preparation is composed of a plurality of wafer bodies, and a plurality of through holes are formed. On both sides of the wafer body, patterned electrodes are formed from a paste containing silver as a main component. Further, a yttrium oxide-based paste is embedded in at least one of the through holes of each wafer body, and a resistor body having a desired resistance 値 is provided. The sintering operation was carried out at a temperature of about 850 ° C for about 5 hours, and a ceramic insulating substrate including a plurality of wafer bodies was produced. The prepared ceramic insulating substrate is provided with a plurality of ceramic wafer bodies having a conductive through hole and a resistance heating body. Further, the ceramic wafer system includes a plurality of pattern electrodes formed on both sides, a conduction through hole for electrically connecting the pattern electrodes of the front and back, and a through hole in which the resistance heating body is embedded. Specifically, the wafer segment ′ includes a heat-dissipating element disposed in at least one of the first through holes, and a through-hole through at least two or more conductive through-holes. The material component and the lead-out pin are mounted in this section; J becomes a protection component. v The lead electrode of the insulating substrate made of ceramics is subjected to a reflow process to form a lead-out pin and a fuse element. In 眇, in this case, the fuse is a Pb-free soluble alloy material' selected material that will not be smashed by reflow treatment, and will not damage the grafting function after the reflow treatment. Maintain performance and safety under the collective treatment known by reflow. Specifically, ..., selected by the following =... gold. That is, one (255. 〇, .99.3Bl-0.5 heart. heart (258. 〇, 97Bl_3Ag ( 262 C) ^ Βι ( 272 ° 〇 ' Τ 8Ζη-22Α 1 ( 275〇C ) > 95Ζη-5Α1 (382C), 54Ge-46A1 (4m:). The protective element using these error-free alloys can be reflow soldered on the 245U, so that in the case of surface mount parts, it can be soldered together with other devices at the same time. The previously marked number is the number of thousands of people who are not allowed to record the alloying ratio (% by weight), and the brackets after the component symbol (4) indicate the elution temperature. The selected soluble alloy is formed into a solder braid. The pattern on the surface side is electrically fixed. If necessary, it is placed on the surface of the watch. The nozzle is attached to the conductive conductive pattern on both sides of the moon, or the soluble alloy wire is placed on the surface. The ceramic crucible is sealed, and the cover portion of the cover portion is covered with a pattern electrode and a soluble alloy on the surface of the wafer body, and the coated area is smaller than that of the entire body of the ceramic companion wafer body. In addition, it is preferable to use a flat copper wire for the lead wire for export. On the other hand, in order to ensure the smooth dissolution of the fusible alloy wire element 11 201110180, 'the flux film is provided on the surface of the fusible alloy used. At this time, the flux material It must be able to withstand the above reflow temperature, and it will not be covered by the surface of the fusible alloy and will remain in the covered state at 250 ° (the above-mentioned operating degree), so that the fusing action is more reliable. a high-temperature flux for the composition, that is, a solid component that functions as a coating agent, and a light-colored acid-modified water having a heat resistance of more than 〇〇 is added to the rosin 1 to 5 parts by weight. Here, 5 to 3 parts of rosin-modified maleic acid resin or rosin-modified phenolic resin selected in the range of softening point of 120 to 19 (rc), octadecanoate or as a knife-dispersion modifier is added or Stearic acid amine or saponin 2 〇 5 5 parts, fumed sputum (Fumed Sj丨ica) or organic G smoldering as a promoter to prevent heat blunt. 5~1 〇, as an antioxidant Diphenylamine or dicyclohexylamine 〇·5~1 parts are heated and mixed to form As a substrate, 2 to 10 parts of a saturated linear aliphatic dicarboxylic acid having 4 to 12 carbon atoms and 2 to 1 part by weight of a saturated linear amino acid having 4 to 12 carbon atoms are additionally added as an active agent. A solid co-solvent obtained by dispersing an aliphatic hydroxymonocarboxylic acid having a carbon number of 66 or a hydroxy dicarboxylic acid or a hydroxytricarboxylic acid at a temperature of 200 Å. The above protective element of the present invention is used. The battery pack of the protection device is used as a protection device of another embodiment by the charge and discharge control device. That is, when the control element senses an abnormality and energizes the signal current to the heat generating element, the heat is generated and the soluble alloy is made. A non-recoverable protection circuit for a low melting point fusible alloy fuse of a fuse element. Here, the protective element used herein is composed of a ceramic-charged wafer body having a plurality of pattern electrodes and a common through-hole connected to the t-electrode on both sides; and soldering disposed on the ceramic The heat-dissipating element of the wafer-shaped resistor of the film 12 on the surface of the wafer body 12 can be fused 12 201110180 and disposed in the through-hole inner member. (Embodiment 1) Hereinafter, a first embodiment of the present invention will be described in detail with reference to the drawings. The protection of the axial pin type of the present invention 1()' is shown in a perspective view in the figure: the side is provided with: a ceramic wafer It 12, which protects the mounting part mounted on the surface side thereof from being soluble. The outer casing cover 14 of the package of the alloy wire-dissolving element or the resistance heating element in the through hole, and the lead wires (10) 15 to 17 connected to the pattern electrode on the back side. Here, a patterned electrode is formed on both surfaces of the Tauman wafer body 12, and a fusible alloy fuse element is attached to the surface side, and a lead-out pin is attached to the lunar surface side, and a resistance heating element 安装2 is attached to the wafer body through-hole. In the state before the housing cover member 4 of the package is mounted, a perspective view is shown, and on the pattern electrodes 21 to 23 provided on the ceramic wafer body 12, a melting alloy fuse in which a flux is coated on the surface is disposed. The element #20 has its both ends welded to the pattern electrodes 22 and 23, and the intermediate point is connected to the resistance heating element (not shown) via the pattern electrode 21. Fig. 3 is a perspective view showing the state before mounting of the fusible alloy fuse element 20 of Fig. 2. The first pattern electrode 21 at the center of the front surface side of the ceramic wafer body 12, the pair of second pattern electrodes 22 and 23 on both sides thereof, the first through holes 24 formed at the positions of the pattern electrodes, and the pair of second through holes are formed. Holes 26, 27. Among these, the conductive heat-generating elements 25' are embedded in the through-holes 24, and the conductive materials 28 and 29 are buried in the through-holes 26 and 27. However, although not shown, the three pattern electrodes formed on the back side of the wafer body 12 correspond to the front side pattern electrodes 21 to 23 13 201110180, and the resistance heating elements 25 and the guide electrodes I are received. . On the other hand, the lead-out bows 15 to 17 mounted on the back side are made of flat-angle copper wires, and are soldered to the pattern electric m. The film body 12 is before the sintering process. The sheet-forming stage has a predetermined shape and is subjected to processing of a desired through-hole. Pattern printing of the conductive pattern is performed after the sintering process, and a filling process of the resistor is performed in the through hole. The Tauman wafer and the system simultaneously form a plurality of predetermined pattern electrodes or resistors, and are separated and divided into individual parts after the predetermined processing work. In order to maintain good insulation, the sheet may be formed of a predetermined shape on each side of the insulating substrate by oxidizing the insulating material other than (4). For example, a conductor is provided in two through holes at a predetermined position, and the resistor body is electrically connected to the two-sided round electrode by one beal perforation. It is noted here that the resistor system disposed in the through hole does not require a space on the surface side, and contributes to miniaturization and thinning. Therefore, in addition to the increase in the withstand voltage, the baking required in the film-like resistor can be omitted, and no trauma is caused. Nor does it happen in the handling of accidents or bad occurrences, to achieve long-term stability. (Embodiment 2) Other embodiments of this month are the If 7L members 30 of the crystal f shown in the perspective view of Fig. 4. Fig. 4 is a perspective view showing the side other than the protective cover member, and the fusible alloy is melted on the surface of the wafer body 32.
# S R ^ 4* _L. 口 & 各絲 7G 成，可作為表面安裝型晶片零件來進行處理的構 14 201110180 χ該晶片類型的保護元件3。係在陶究晶片體以的兩面 央的第1圖案電極41與端兩側分別形成第2圖案電極 42、43’背面側圖案電極直接被搭載在印刷基板上而使得 與圖案電極之間被焊接。第5圖係顯示保護蓋件及可嫁合 金溶絲元件裝設前的狀態的立體圖。在第5圖係顯示設在 陶竞晶片體32表面的圖案電極群，在中央形成有第！圖案 電極41、在端面側形成有-對第2圖案電極42、.在第 1圖案電極41形成有第空力^ 虿弟1貫穿孔44’在第2圖案電極42、 43係在基板端面以導電體溝部46、〇分別相對應的方式 形成在陶竟晶片體32。在此，在第5圖所示之與中央圖案 電極41相對應的第1貫穿孔4“系被埋設有被調整成預定 電阻値的電阻發熱元件45。此外’在陶竟晶片體Μ之電 極圖案42及43的端面側係以將兩面圖案電極作導通連接 的方式形成有導電體溝部46、仏基板中央的第i圖案電 極亦形成在兩面’透過設在貫穿孔“的電阻發熱元件 45而彼此作電性連接。 上述陶究晶片體係將在搭載安装可溶合金炼絲元件、 電阻發熱元件及保護蓋件之瞬前為止的製作工程，在彼此 以多數連結狀態下被加工處理。亦即’複數個陶究晶片體 係在連結有氧化1呂材^片的狀態下藉由總括處理予以 製造，至完成瞬前的工程，由於個別化而作分離分割。將 多數陶€晶片形成為連結狀態而進行加卫處理，藉此除了 縮小製品間的不均以外，可達成製品間的特性或性能均〆 化。因此，導電體溝部46'47對於陶究晶片體端面的形成 15 201110180 =在將導電素材埋設在形成於多數晶片連合體的貫穿孔之 :二用貫穿孔進行分離切斷來進行。如第4圖所示，在 瓷b曰片體32的表面側，將助炫劑 ^ w饭覆在低熔點可熔合+ 勺可熔合金熔絲元件35 以配置。同樣地… ㈣與圖案電極作焊接予 置门樣地’經由兩端面的導電體溝部仏、" 面側圖案電極作電性連 、 池竹等出知子焊接設在該箄 貪面側的圖案電極，經由該導出 4 ^ A ^ φ 子而構成表面安裝用配 電氣電路。亦可視需要藉由陶究蓋部或絕 材^封可炼合金料元件35，可構成封裝體。在此，被 埋。又在陶瓷晶片體32之貫穿孔 €阻體的發熱元件45 辦是晶片體32—體配置而保持熱結合狀態，因此電阻 此一 片髖被傳熱至可熔合金熔絲元 ’錯此可迅速且正杨以預定的㈣溫度進行作動。在 此各構成要素係以儘可能小且薄的方式予以形成加工。例 如’貫穿孔的直徑P係例如以G.2mm所形成。此外，發熱 疋件的電阻値係以在貫穿孔44 衣豸兩面的電極圖案間 :為所希望的電阻値、例如的方式調整電阻材料 或貫穿孔尺寸等。 上述實施例申，在陶窨黑η辦& Α & ^尤日曰片體的表背兩面係透過各自 的貫穿孔而使3個圖案電極相互連接，其中在^貫穿孔 1 里設配置有電阻發熱元件。在表面側的3個圆案電極係以 架橋狀架橋有可溶合金嫁絲元件而與3個圖案電極相炼 接’藉此形成為具有低炫點合金的第】可炼體部分盥第2 可炼體部分的雙重類型可嫁合金炼絲元件。在炫接在各圖 16 201110180 案電極的低炼點合金的可溶體部分係被著有助溶劑 可炫合金炫絲元件。視需要，包含圖案電極而以比陶究？ 片體稍小的絕緣性陶究蓋部作密閉覆蓋。其中，可溶合^ 炫絲疋件的低熔點合金可為單類型的可炼體，但是在雙重 :員型之可熔體的情形下’可將各自的可溶體的動作溫度形 成為相同者或不同去。+π 者在不同的動作溫度的雙重類型中， 以將溫度差形成在動作溫度不均的範圍内為宜。 在形成在陶麥具Η a & 片體之者面側的3個圖案電極安裝導 :用引腳或導出端子而與被保護用機器相連接。發 =置在第！貫穿孔内，與第】圖案電極相連接。保護元 件係例如額定])1 n a 2V、10A、動作溫度135t、發埶 5〇Ω，關於完成品的外· …電阻 成為極小。1中，方：、可將陶竟晶片體本體形 J 形狀陶瓷晶片體1 2係厚度〇. 4mm的氧 土板ϋ由小型化，氧化紹陶竟的所需量被大幅削減， =面了传較具經濟性的優點，並且當以網版印 =電極的形成時’由於為小基板，因此可利用】次印刷 夕°卜行多數印刷加工等在製造上亦得經濟上的效果。此 引腳構件15〜π係使用寬幅0.7〜lta、厚度〇2 0平板狀Sn鍍敷銅線，因此有助於本體部分的厚 度減低而有助於薄型化。 (實施例3)# S R ^ 4* _L. Port & 7G each wire, which can be processed as a surface mount type wafer part 14 201110180 保护 This wafer type protection element 3. The second pattern electrodes 42 and 43' are formed on the first pattern electrodes 41 and the both sides of the two sides of the wafer body, and the back side pattern electrodes are directly mounted on the printed circuit board so as to be soldered to the pattern electrodes. . Fig. 5 is a perspective view showing a state before the protective cover member and the graftable gold-soluble wire element are mounted. In Fig. 5, the pattern electrode group provided on the surface of the pottery wafer body 32 is shown, and the center is formed in the center! In the pattern electrode 41, a pair of second pattern electrodes 42 are formed on the end surface side, and a first air force is formed in the first pattern electrode 41. The first pattern electrodes 42 and 43 are electrically connected to the end faces of the substrate. The body groove portions 46 and 〇 are formed in the ceramic wafer body 32 in a corresponding manner. Here, in the first through hole 4 corresponding to the central pattern electrode 41 shown in FIG. 5, the resistance heating element 45 adjusted to a predetermined resistance 埋 is embedded. Further, the electrode of the wafer body is placed. On the end faces of the patterns 42 and 43, the conductor groove portion 46 is formed such that the two-sided pattern electrodes are electrically connected to each other, and the i-th pattern electrode at the center of the ruthenium substrate is also formed on both surfaces of the resistance heating element 45 which is provided through the through hole. Electrically connected to each other. The above-mentioned ceramic wafer system is processed in a state in which a soluble alloy wire-forming component, a resistance-heat-generating component, and a protective cover are mounted in a state in which they are connected in a plurality of states. That is to say, a plurality of ceramic wafer systems are manufactured by a collective process in a state in which an oxidized 1 ray material is connected, and the completion of the prior art is separated and divided by individualization. A plurality of ceramic wafers are formed in a joined state and subjected to a reinforcing treatment, whereby in addition to narrowing the unevenness between the products, the characteristics or performance between the products can be made uniform. Therefore, the conductor groove portion 46'47 is formed to cover the end surface of the wafer body. 15 201110180 = The conductive material is buried in the through hole formed in the plurality of wafer merging bodies: the separation hole is cut and cut. As shown in Fig. 4, on the surface side of the porcelain b-sheet 32, the lubricant is coated on a low melting point fusible + scoop fusible alloy fuse element 35. Similarly, (4) soldering the pattern electrode to the front of the door. 'The conductive groove portion 两端, " the surface pattern electrode on both end faces is used for electrical connection, and the bamboo is connected to the pattern on the side of the greedy surface. The electrode constitutes a surface mounting electrical circuit via the derived 4 ^ A ^ φ sub. It is also possible to form a package by arranging the cover material or the extrudate alloy material element 35 as needed. Here, it is buried. Further, in the heat generating component 45 of the through-hole of the ceramic wafer body 32, the wafer body 32 is disposed in a body-like manner to maintain a thermal bonding state, so that the resistance of the one piece of the hip is transferred to the fusible alloy fuse element. And Zheng Yang is operating at a predetermined (four) temperature. Each of the constituent elements is formed into a processing that is as small and thin as possible. For example, the diameter P of the through hole is formed, for example, by G. 2 mm. Further, the electric resistance of the heat generating element is adjusted between the electrode patterns on both sides of the through hole 44 by a desired resistance 値, for example, by adjusting the size of the resistive material or the through hole. In the above embodiment, the three pattern electrodes are connected to each other through the respective through holes in the front and back sides of the ceramics and the Α amp & 尤 amp amp , , , , , , , , , , , , , , , , , , There are resistance heating elements. The three round electrodes on the surface side are bridged with a soluble alloy bristle element and are welded to the three pattern electrodes, thereby forming a second part of the refinable part with a low-point alloy. A dual type of achievable part can be alloyed with an alloy wire. In the soluble part of the low-refining alloy in the electrode of each of the figures 16 201110180, it is supported by a solvent-rich alloy wire element. Include the pattern electrode as needed? The insulating ceramic cover with a slightly smaller body is closed. Wherein, the low melting point alloy of the soluble wire can be a single type of smelable body, but in the case of a double: member type meltable, the operating temperature of each soluble body can be formed to be the same Or different. In the double type of different operating temperatures, it is preferable to form the temperature difference within the range of the operating temperature unevenness. Three pattern electrode mountings are formed on the side of the surface of the ceramics Η a &sheet; and are connected to the protected machine by pins or lead terminals. Send = placed in the first! Inside the through hole, it is connected to the 】 pattern electrode. The protection element is, for example, rated]) 1 n a 2V, 10A, operating temperature 135t, and hair 埶 5〇Ω, and the resistance of the finished product is extremely small. In the first, the square: the ceramic body of the ceramic body shape of the J-shaped ceramic wafer body 1 2 system thickness 4. 4mm oxygen-soil plate ϋ by miniaturization, the amount of oxidized Shao Tao actually reduced, = face It is economical, and when it is formed by screen printing = electrode, it is economical because it is a small substrate, so it can be used for printing. Since the lead members 15 to π are plated with a thickness of 0.7 to lta and a thickness of 〇20, the Sn-plated copper wire contributes to a reduction in the thickness of the body portion and contributes to a reduction in thickness. (Example 3)
:發明之保護元件的安裝構造係可適用在二次 過充電俾々ϊ Φ % , J ^ 。在搭載於主要印刷基板的M〇SFET等主動 »：： 17 201110180 :件間，以將陶究蓋部側設為下方而嵌入的方式 如上所述將陶以片體的其中—面以㈣蓋部的封事 近接=Γ護元件係可將該部分與主動元件的感熱部 間來安#㈣用電路零件π件間的間隙空 類保轉雷、D ' ’有利於小型薄型化，成為適於使用該 …、5路的精簡的攜帶用資訊通訊機器者。此外 上的電阻發熱體m並列配置在"晶 達成對可料金料元件之均-的熱傳達 達成精度提升。此外’藉由零件的小型I在安裝上， 保護電路的控制元件間的空間，而達成有助於保 。蔓裝置全體之精簡化等的效果。 =所揭示之實施形態及實施例均僅為例示，應理解 •卜為设限者。本發明之範圍係藉由申 明所示，意指包含有與申請專利範圍均等::非 及範圍内的所有變更。 圖式簡單說明】 第1圖係本發明之實施例1之保護元件的正面立體圖。 第2圖係與組裝過程相對應之保護元件的立體圖。。 第3圖係熔絲元件安裝前之保護元件的立體圖。 圖 。第4圖係顯示實施例2之保護元件之安裝構造的立體 體圖 第5圖係實施例2之熔絲元件安裝前之保護元件的立 18 201110180 【主要元件符號說明】 10、 30 保 護元件 12、 32 陶 瓷晶片 體 14 外 殼蓋件 ( 蓋部） 15、 16' 17 導 出引腳 20、 35 可 炼合金溶 絲元件 21、 41 第 1圖案 電 極 22、 23 ' 42、 43 第2圖 1 i :電極 24、 .44 第 1貫穿 孔 25、 ‘45 電 阻發熱 元 件（晶片電阻） 26、 • 27 第 2貫穿 孔 28、 .29 導 電素材 46、 ‘47 端 面側導 電 體溝部 19The mounting structure of the inventive protective element is applicable to the secondary overcharge 俾々ϊ Φ % , J ^ . In the case of active contact: such as M〇SFET mounted on the main printed circuit board, the side of the ceramic cover is placed on the side of the cover, and the side of the cover is covered with (4) as described above. The sealing of the part is close to the contact element. The protection element can be used between the part and the thermal sensing part of the active element. (4) The space between the π parts of the circuit component is guaranteed to be transferred to the thunder, and D ' is beneficial to the small and thin type. For the use of this..., 5-way streamlined portable information communication machine. In addition, the resistance heating element m is arranged side by side in the heat transfer of the crystal to achieve the uniformity of the material of the material. In addition, by the small size of the part I is installed, the space between the control elements of the circuit is protected, and the help is achieved. The effect of the simplification of the vine device as a whole. The embodiments and examples disclosed are merely illustrative and should be understood as being limited. The scope of the present invention is intended to include all modifications within the scope of the claims and the scope of the claims. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a front perspective view of a protective element of a first embodiment of the present invention. Figure 2 is a perspective view of the protective element corresponding to the assembly process. . Figure 3 is a perspective view of the protective element before the fuse element is mounted. Figure. 4 is a perspective view showing a mounting structure of a protective element of Embodiment 2. FIG. 5 is a perspective view of a protective element before mounting a fuse element of Embodiment 2. 201110180 [Explanation of main component symbols] 10, 30 Protective component 12 32 ceramic wafer body 14 housing cover (cover) 15, 16' 17 lead pin 20, 35 smeltable alloy wire component 21, 41 first pattern electrode 22, 23 '42, 43 2 Figure 1 i: Electrode 24, .44 first through hole 25, '45 resistance heating element (wafer resistance) 26, • 27 second through hole 28, .29 conductive material 46, '47 end face side conductor groove portion 19