TW201109279A - Composition for forming doped or non-doped zinc oxide thin film, and method for producing zinc oxide thin film using same - Google Patents

Composition for forming doped or non-doped zinc oxide thin film, and method for producing zinc oxide thin film using same Download PDF

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TW201109279A
TW201109279A TW99112530A TW99112530A TW201109279A TW 201109279 A TW201109279 A TW 201109279A TW 99112530 A TW99112530 A TW 99112530A TW 99112530 A TW99112530 A TW 99112530A TW 201109279 A TW201109279 A TW 201109279A
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compound
composition
organic
group
film
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TW99112530A
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Chinese (zh)
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TWI465401B (en
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Koichiro Inaba
Kouji Toyota
Kenichi Haga
Kouichi Tokudome
Yujin Takemoto
Kenji Yoshino
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Tosoh Finechem Corp
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Priority claimed from JP2009102544A external-priority patent/JP5546154B2/en
Priority claimed from JP2009115111A external-priority patent/JP5515144B2/en
Priority claimed from JP2009197052A external-priority patent/JP5641717B2/en
Priority claimed from JP2010030914A external-priority patent/JP5688225B2/en
Priority claimed from JP2010030916A external-priority patent/JP5674186B2/en
Application filed by Tosoh Finechem Corp filed Critical Tosoh Finechem Corp
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Abstract

Disclosed is a composition for forming a zinc oxide thin film, which contains an organic zinc compound as a starting material, is not ignitable, and can be easily handled. The composition for forming a zinc oxide thin film is capable of forming a transparent zinc oxide thin film which is not doped or doped with a group 3B element by being heated at 300 DEG C or less. Also disclosed is a method for obtaining a transparent zinc oxide thin film, which is not doped or doped with a group 3B element, using the composition. Specifically, the composition for forming a zinc oxide thin film contains a product which is obtained by partially hydrolyzing an organic zinc compound by adding water to the organic zinc compound or a solution of the organic zinc compound and a group 3B element compound. In cases when a group 3B element compound is contained, the molar ratio of the group 3B element compound to the organic zinc compound is within the range of 0.005-0.3. The composition is applied to a substrate surface and then heated, thereby forming a zinc oxide thin film which is doped with the group 3B element.

Description

201109279 六、發明說明: 【發明所屬之技術領域】 本發明之第!態樣係關於一種以有機鋅化合物為原料而 製備、無著火性且操作容易之氧化辞薄膜製造用组合物、 -錢用其之氧化辞薄膜之製造方法1収,本發明係關 .力一種藉由纟大氣壓左右之壓力τ、且3〇代以下之溫度 下進行加熱,而可形成對可見光具有高透射率之透明氧化 辞薄膜的氧化辞薄膜製造用組合物、及使用該組合物之氧 0 化鋅薄膜之製造方法。 進而本發明之第2,喊樣係關於一種以有機鋅化合物為 原料而製備、無著火性且操作容易之接雜有3Β族元素之氧 化辞薄膜製造用組合物、及使用其之摻雜有3Β族元素之氧 化鋅薄膜之製造方法。特別是,本發明係關於一種藉由在 大氣壓左右之壓力下、且3〇m之溫度下進行加熱, 而可形成對可見光具有高透射率之透明氧化鋅薄膜的摻雜 有3B族元素之氧化辞薄膜製造用組合物、及使用該組合物 Ο 之摻雜有3B族元素之氧化鋅薄膜之製造方法。 此外,本發明之第3態樣係關於一種可製備對可見光具 有80%以上之平均透射率,且具有可用於抗靜電薄膜、紫 外線截斷薄臈、透明電極薄膜等之程度之低體積電阻率之 氧化鋅薄膜的氧化鋅薄膜製造用組合物。本發明之氧化鋅 薄膜製造用組合物係以有機辞化合物為原料而製備,無著 火性且操作容易,進而在用作旋塗、浸塗塗佈原料時,可 提供具有體積電阻率未達8xl〇-2 之特性的氧化鋅薄 147876.doc 201109279 膜,在用作噴霧熱分解塗佈原料時,可提供具有體積電阻 率未達lxio-3 特性的氧化鋅薄膜。 本發明之第4態樣係關於—種對可見光具有8〇%以上之 平均透射率’且具有可用於抗靜電薄膜、紫外線截斷薄 膜、透明電極薄膜等之程度之低體積電阻率之氧化鋅薄膜 的製造方法’進而係關於一種使用該製造方法而製作之抗 靜電薄膜、紫外線截斷薄膜、透明電極薄膜。 根據本發明之第4態樣之製造方法,於旋塗、浸淹時, 可獲得具有體積電阻率未達8xl〇-2〜m之特性的氧化辞薄 膜,用噴霧熱分解時,可獲得具有體積電阻率未達 1x10 3 n.cm之特性的氧化鋅薄膜。 本發明之第5態樣係關於一種摻雜氧化鋅薄膜形成用組 合物及摻雜氧化鋅薄膜之製造方法。更詳細而言,本發明 之第5態樣係關於-種摻雜有3B族元素之氧化辞薄膜形成 用組合物、及使用其之摻雜有3B族元素之氧化辞薄膜之製 造方法。 【先前技術】 對可見光具有高透射性之摻雜有3B族元素或無摻雜之透 明氧化鋅薄膜可用於光觸媒膜、紫外線截斷膜、紅外線反 射膜、cIGS(copper Indium Ganium Se⑹^,銅銦嫁磁) 太陽電池之緩衝層、色素增感太陽電池之電極膜、抗靜電 膜、化合物半導體發光元件、薄膜電晶體等,具有廣泛的 用途。 作為摻雜或無摻雜之透明氧化鋅薄膜之製造方法,已知 147876.doc 201109279 有各種方法(非專利文獻1 ),作為將有機辞化合物用作原料 之代表性方法,有化學氣相沈積(CVD,chemicai V邛的 deposition)法(非專利文獻2)、以及喷霧熱分解法(非專利 文獻3)、旋塗法(專利文獻丨)、浸塗法(非專利文獻句等塗 佈法。 •然而,於化學氣相沈積(CVD)法中,存在以下問題等: 必需使用大型真空容器,且製膜速度非常慢,因而製造成 ,提高,又,由於可根據真空容器之大小而形成的氧化辞 〇 薄膜之大小受到限制,因而無法形成大型者。 與上述化學氣相沈積(CVD)法相比,上述塗佈法具有以 下優點:由於裝置簡便且膜形成速度快,因此生產性高且 製造成本亦低。又,由於無需使用真空容器而不會受到真 空容器之制約,因此亦可製作較大之氧化辞薄膜。 於上述噴霧熱分解法中,於喷塗之同時進行溶劑乾燥, 繼而將基板溫度加熱至3 6 01以上而獲得氧化鋅薄膜塗 膜。 〇 於上述旋塗法、浸塗法中,於旋塗、浸塗後將溶劑乾 燥,繼而將基板溫度加熱至400t以上,藉此獲得氧化辞 薄膜塗膜。 [先前技術文獻] [專利文獻] [專利文獻1]曰本專利特開平7_182939號公報 [非專利文獻] [非專利文獻1]日本學術振興會透明氧化物《電子材料第 147876.doc 201109279 166委員會編、透明導電膜之技術修訂2版(2006)、 pl65〜173 [非專利文獻 2] K. Sorab,et al· Appl_ Phys. Lett., 37(5),1 September 1980 [非專利文獻 3] J. Aranovich,et al. J. Vac. Sci. Technol., 16(4),July/August 1979 [非專利文獻 4] Y. Ohya,et al. J. Mater· Sci.,4099(29),1994 【發明内容】 [發明所欲解決之問題] 摻雜或無摻雜之透明氧化鋅薄膜係使用塑膠基板作為基 板。因此,透明氧化鋅薄膜形成時所應用之加熱必需於塑 膠基板之耐熱溫度以下實施。然而,上述非專利文獻3所 。己载之喷霧熱分解法、專利文獻丨所記載之旋塗法及非專 利文獻4所記載之浸塗法中,無法以塑膠基板之耐敎溫度 以下之加熱獲得透明氧化鋅薄膜。若考慮到塑膠基板之耐 熱溫度以及加熱所需之成本等,則製膜時所需之加熱期望 是3 0 0 °C以下。 根據本發明者等人之研& 寺之研九,即便使用非專利文獻3所記 &乙酸辞之水溶液、專利文獻1 所。己載之旋塗法中所用沾4 溶液、或非專利文獻4”\=機鋅化合物與有機溶劑之 鋅化合物與有機、、容劑之、二浸塗法中所用的包含有機 獲ml 於職以下製膜,亦益法 =透明之氧化鋅薄膜,而僅獲得不透明膜 專利文獻1中亦記載有 乳化㈣膜。 有使用—乙基鋅之己院溶液之方法’ 147876.doc 201109279 使用該溶液嘗試了在300t以下製膜,但仍無法獲得透明 之氧化辞薄膜。 士又,二乙基鋅係於大氣中具有著火性,在保管、及使用 才必須非常注意的化合物。因此,於實際應用中,難以於 不對二乙基辞進行稀釋等、而通常大多在水存在之環境中 $行的嘴霧熱分解法'旋塗法等中加以使用。二乙基辞於 冷解於有機溶劑之狀態下,可降低著火性等危險性,但如 Ο ❹ 專利文獻1所5己載般’於使用一面反應一面溶解於醇系有 機溶劑=二乙基鋅的氧化辞薄膜之製膜時,必需於彻。c 以上之焉溫下進行加熱。 本發明之目的在於提供如下氧化辞薄膜製造用組合物, 其係以有機辞化合物為原料而製備,但無著火性且操作容 易’並且即便需要加熱亦可以3〇〇t以下之加熱而形成摻 雜有3B族元素或無摻雜之透明氧化辞薄膜。進而,本發明 ^目的在於提供如下方法’即’使用該組合物,考慮到塑 膠基板之耐熱溫度以及力献所带 及加熱所而之成本等,製膜時無需加 ^或者即便加熱亦可以3〇〇t以下之加熱而獲得換雜有 3B鉍tl素或無摻雜之透明氧化辞薄獏。 [解決問題之技術手段] 本:明之第i側面係關於一種氧化辞薄膜製造用組合 含在溶液81或溶液82中添加水,至少將下述有機 部分水解而得之產物·,上述溶⑽係將下述 2⑴所示之有機辞化合物溶解於供電子性有機溶劑中而 成者’上述溶液82係將下述通式⑴所示之有機辞化合 147876.doc 201109279 物、以及下述通式(2)或下述通式(3)所示之3B族元素化合 物的至少1種溶解於供電子性有機溶劑中而成者: R^Zn-R1 ⑴ (式中’ R1為碳數1〜7之直鏈或支鏈烧基)201109279 VI. Description of the Invention: [Technical Field] The present invention relates to a composition for producing an oxidized film which is prepared by using an organic zinc compound as a raw material, which is non-flammable and easy to handle, and is used for money. The invention relates to a method for producing an oxidized film, which is capable of forming a transparent oxidation having high transmittance to visible light by heating at a temperature τ of about 纟 atmospheric pressure and at a temperature of 3 以下 or less. A composition for producing an oxide film of a film and a method for producing a zinc oxide film using the composition. Further, the second aspect of the present invention relates to a composition for producing an oxidized film which is prepared by using an organic zinc compound as a raw material, is non-flammable, and is easy to handle, and is doped with A method for producing a zinc oxide film of a steroid element. In particular, the present invention relates to an oxidation of a Group 3B-doped element of a transparent zinc oxide film having a high transmittance for visible light by heating at a pressure of about 3 Torr and a temperature of about 3 Torr. A composition for producing a film and a method for producing a zinc oxide film doped with a Group 3B element using the composition Ο. Further, the third aspect of the present invention relates to a low volume resistivity which can produce an average transmittance of 80% or more for visible light and has a degree of use for an antistatic film, an ultraviolet cut thin film, a transparent electrode film, or the like. A composition for producing a zinc oxide thin film of a zinc oxide film. The composition for producing a zinc oxide thin film of the present invention is prepared by using an organic compound as a raw material, has no ignitability and is easy to handle, and can be provided with a volume resistivity of less than 8xl when used as a spin coating or dip coating raw material.氧化-2 Characteristics of Zinc Oxide Thin Film 147876.doc 201109279 Membrane, when used as a spray pyrolysis coating material, provides a zinc oxide film having a volume resistivity of less than lxio-3. The fourth aspect of the present invention relates to a zinc oxide film having a low volume resistivity of an extent of having an average transmittance of 8% or more for visible light and having an antistatic film, an ultraviolet cut film, a transparent electrode film, or the like. The manufacturing method is further related to an antistatic film, an ultraviolet cut film, and a transparent electrode film produced by using the production method. According to the manufacturing method of the fourth aspect of the present invention, in the case of spin coating or immersion, an oxidized film having a volume resistivity of less than 8 x 1 〇 - 2 〜 m can be obtained, and when it is decomposed by spray heat, it can be obtained. A zinc oxide film having a volume resistivity of less than 1 x 10 3 n.cm. A fifth aspect of the invention relates to a composition for doping a zinc oxide thin film and a method for producing a doped zinc oxide thin film. More specifically, the fifth aspect of the present invention relates to a composition for forming a oxidized film which is doped with a Group 3B element, and a method for producing an oxidized film doped with a Group 3B element. [Prior Art] A transparent zinc oxide film doped with a 3B element or an undoped film having high transmittance for visible light can be used for a photocatalytic film, an ultraviolet cut film, an infrared reflective film, cIGS (copper Indium Ganium Se(6)^, copper indium Magnetic) The buffer layer of a solar cell, an electrode film of a dye-sensitized solar cell, an antistatic film, a compound semiconductor light-emitting element, a thin film transistor, etc., has a wide range of uses. As a method for producing a doped or undoped transparent zinc oxide thin film, various methods (Non-Patent Document 1) are known as 147876.doc 201109279, and as a representative method for using an organic compound as a raw material, there is chemical vapor deposition. (CVD, chemicai V邛deposition) method (Non-Patent Document 2), spray pyrolysis method (Non-Patent Document 3), spin coating method (patent document 丨), dip coating method (non-patent literature sentence coating, etc.) • However, in the chemical vapor deposition (CVD) method, there are the following problems: It is necessary to use a large vacuum container, and the film formation speed is very slow, so that it is manufactured, improved, and, because of the size of the vacuum container. The size of the formed oxidized ruthenium film is limited, and thus it is impossible to form a large one. Compared with the above chemical vapor deposition (CVD) method, the above coating method has the following advantages: high productivity due to simple device and high film formation speed Moreover, the manufacturing cost is also low. Moreover, since it is not necessary to use a vacuum container and is not restricted by the vacuum container, a larger oxidized film can also be produced. In the thermal decomposition method, the solvent is dried while spraying, and then the substrate temperature is heated to 3 6 01 or more to obtain a zinc oxide film coating film. In the above spin coating method or dip coating method, spin coating or dip coating After the solvent is dried, the substrate temperature is heated to 400 t or more, whereby the oxidized film coating film is obtained. [Prior Art Document] [Patent Document] [Patent Document 1] Japanese Patent Laid-Open Publication No. Hei 7-182939 [Non-Patent Document] [Non-Patent Document 1] Japanese Society for the Promotion of Science, Transparent Oxide, Electronic Materials, No. 147876.doc 201109279 166 Committee, Technical Revision of Transparent Conductive Films, 2nd Edition (2006), pl65~173 [Non-Patent Document 2] K. Sorab, Et al. Appl_ Phys. Lett., 37(5), 1 September 1980 [Non-Patent Document 3] J. Aranovich, et al. J. Vac. Sci. Technol., 16(4), July/August 1979 [Non Patent Document 4] Y. Ohya, et al. J. Mater Sci., 4099 (29), 1994 [Disclosure] [The problem to be solved by the invention] Doped or undoped transparent zinc oxide film uses plastic The substrate serves as a substrate. Therefore, the transparent zinc oxide film is used in formation. The heating is carried out at a temperature lower than the heat-resistant temperature of the plastic substrate. However, the above-mentioned non-patent document 3 includes a spray pyrolysis method, a spin coating method described in the patent document, and a dip coating method described in Non-Patent Document 4. The transparent zinc oxide film cannot be obtained by heating below the temperature resistance of the plastic substrate. If the heat resistance temperature of the plastic substrate and the cost required for heating are taken into consideration, the heating required for film formation is desirably below 300 °C. . According to the researcher of the present inventors, the research and development of the temple, and the use of the non-patent document 3, the aqueous solution of acetic acid, and the patent document 1. The dip 4 solution used in the spin coating method, or the non-patent literature 4"\= zinc compound and organic solvent zinc compound and organic, solvent, dip coating method, including organically obtained ml In the following film formation, the method is as follows: a transparent zinc oxide film is obtained, and only an opaque film is obtained. Patent Document 1 also discloses an emulsified (tetra) film. There is a method of using a solution of ethyl zinc in a hospital solution 147876.doc 201109279 Using the solution I tried to make a film below 300t, but I still can't get a transparent oxidized film. In addition, the diethylzinc is a compound that is flammable in the atmosphere and must be paid attention to during storage and use. Therefore, in practical applications. In addition, it is difficult to dilute the diethylation, etc., and it is often used in the environment of the presence of water, which is often used in the hot melt decomposition method of the nozzle, the spin coating method, etc. The diethyl group is used for cold solution in an organic solvent. In this case, it is necessary to reduce the risk of ignitability, etc., but it is necessary to form a film of an oxidized film in which an alcohol-based organic solvent = diethylzinc is dissolved while using a reaction as described in Patent Document 1 Yu Che c. Heating at a temperature higher than the above temperature. It is an object of the present invention to provide a composition for producing an oxidized film which is prepared by using an organic compound as a raw material, but which is ignitable and easy to handle, and can be heated even if heating is required. The transparent oxide film doped with a group 3B element or undoped is formed by heating below 〇〇t. Further, the present invention is to provide a method of using the composition in consideration of the heat resistant temperature of the plastic substrate and The cost of carrying and heating, etc., it is not necessary to add ^ or to heat up to 3 〇〇 t or less to obtain a transparent oxidized thin yttrium. [Technical means for solving the problem] The first aspect of the invention relates to a product for producing a oxidized film, comprising adding water to the solution 81 or the solution 82, and at least hydrolyzing the following organic portion, and the above-mentioned solution (10) The above-mentioned solution 82 is obtained by dissolving the organic compound represented by the following 2 (1) in an electron-donating organic solvent. The organic compound represented by the following formula (1) is 147876.doc 201109279 At least one of the compound and the group 3B element compound represented by the following formula (2) or the following formula (3) is dissolved in an electron-donating organic solvent: R^Zn-R1 (1) (wherein 'R1 is a linear or branched alkyl group with a carbon number of 1 to 7)

McXd.aHaO (2) (式中,Μ為3B族元素,X為鹵素原子、硝酸或硫酸,於χ 為函素原子或硝酸時,仁為丨、4為3,於χ為硫酸時,cA 2、d為3、a為〇〜9之整數) R2™M-R3 (式中,Μ為3B族元素,R2、R3、R4獨立為氫、碳數卜7之 直鏈或支鏈烷基、碳數1〜7之直鏈或支鏈烷氧基、羧酸 基、或乙醯丙酮基,進而L為含有氮、氧或碟之配位性有 機化合物,η為0〜9之整數)。 本發明之第1側面大致分為3個態樣。 第1態樣係無掺雜之氧化辞薄膜製造用組合物及使用該 組合物之氧化鋅薄膜之製造方法。fl態樣係使用上述溶 液S1,亚且於溶液S1中以相對於有機辞化合物之莫耳比成 為〇錢9之範圍之方式添加水而獲得之、含有將上述有機 辞化合物至少部分水解而得之產物的組合物。第i態樣之 組合物記載於以下,糾態樣之製造方法如以下b 8〜1-9所記載。 [1-1] -種氧化鋅薄膜製造用組合物,其包含藉由以下方式而 147876.doc 201109279 製造之產物,即於將下述通式⑴所示之有機鋅化合物溶解 於供電子性有機溶劍而成之溶液中,以相對於有機辞化合 物之莫耳比成為0.6〜〇.9之範圍之方式添加水,而將上述有 機辞化合物至少部分水解: R^Zn-R1 (1) (式中,R1為碳數丨〜7之直鏈或支鏈烷基卜 [1-2] 如Π】]之組合物’其包含將自上述有機溶劑分離之上述 〇 H解於與上述供電子性有機溶劑不同的薄膜形成用有 機溶劑中而得之溶液。 [1-3] 如[丨2]之組合物,其中上述產物之濃度為3〜12質量%之 範圍。 [1-4] 如[1-1]至[1-3]中任一項之組合物,其中上述有機辞化合McXd.aHaO (2) (wherein, Μ is a Group 3B element, X is a halogen atom, nitric acid or sulfuric acid, and when χ is a functional atom or nitric acid, the lanthanum is 丨, 4 is 3, and when χ is sulfuric acid, cA 2, d is 3, a is an integer of 〇~9) R2TMM-R3 (wherein, Μ is a group 3B element, and R2, R3, and R4 are independently hydrogen or a straight or branched alkyl group of carbon number 7 a linear or branched alkoxy group having a carbon number of 1 to 7, a carboxylic acid group or an acetoacetone group, and further L is a coordinating organic compound containing nitrogen, oxygen or a dish, and η is an integer of 0 to 9) . The first aspect of the present invention is roughly divided into three aspects. The first aspect is a composition for producing an undoped oxidized film and a method for producing a zinc oxide film using the composition. The fl state is obtained by adding the above solution S1, and adding water to the solution S1 in such a manner that the molar ratio of the organic compound is in the range of the money 9 and containing at least partially hydrolyzing the above organic compound. A composition of the product. The composition of the i-th aspect is described below, and the manufacturing method of the correction state is as described in the following b 8 to 1-9. [1-1] A composition for producing a zinc oxide thin film comprising a product produced by the following method 147876.doc 201109279, that is, an organic zinc compound represented by the following formula (1) is dissolved in an electron-donating organic compound In the solution obtained by dissolving the sword, water is added in such a manner that the molar ratio of the organic compound is 0.6 to 〇.9, and the above organic compound is at least partially hydrolyzed: R^Zn-R1 (1) ( Wherein R1 is a linear or branched alkyl group having a carbon number of 丨7 to 7; [1-2] a composition comprising the above-mentioned oxime H separated from the above organic solvent and the above-mentioned electron donating The film having a different organic solvent forms a solution obtained by using an organic solvent. [1-3] The composition of [丨2] wherein the concentration of the above product is in the range of 3 to 12% by mass. [1-1] The composition according to any one of [1-3], wherein the above organic compounding

物係R1為碳數1、2、3、4、5、或6之烷基的化合物。 [1-5] 如[1-1]至[1-4]中任一項之組合物,其中上述有機辞化合 物為二乙基鋅。 [1-6] 如[1-1]至[1-5]中任—項之組合物,其中上述供電子性有 機溶劑為四氫η夫喃。 [1-7] 如[1-2]至[1-6]中任一項之組合物,其中上述薄膜形成用 147876.doc 201109279 有機溶劑為1,4-二嘮烷。 [1-8] 一種氧化辞薄膜之製造方法,其包括:將如[1_1]至[1_7] 中任一項之組合物塗佈於基板表面,繼而將所得之塗佈膜 於300 C以下之溫度下進行加熱而形成氧化鋅薄膜。 [1-9] 如[1-8]之製造方法,其中上述氧化鋅薄膜對可見光具有 80%以上之平均透射率。 第2態樣係一種摻雜有3B族元素之氧化辞薄膜製造用組 合物及使用該組合物之氧化辞薄膜之製造方法。第2態樣 係包含以下產物之組合物,該產物係使用上述溶液Μ且溶 液S2中观元素化合物之添加比例以相對於上述有機辞化 合物之莫耳比計為0.005〜〇·3之範圍,且將有機辞化合物至 上部分水解而得。第2態樣之組合物記載於以下2_丨〜2_ 1 2 ’第2態樣之製造方法如以下2-1 3〜2-14所記載。 [2-1] —種摻雜氧化辞薄膜製造用組合物,其包含在將下述通 式⑴所有機鋅化合物、與下料式⑺或下述通式(3) 所不之3Β族元素化合物之至少1種溶解於供電子性有機溶 ,而成之溶液中添加水,而至少將上述有機鋅化合物至少 部分水解而得的產物,且上述3Β族元素化合物相對於上述 有機辞化合物之莫耳比為〇 〇〇5〜0 3之比例: R 丨-Zn-Ri ⑴ (式中’ R〗為碳數丨〜7之直鏈或支鏈烷基) 147876.doc •10· 201109279The compound R1 is a compound having an alkyl group having 1, 2, 3, 4, 5, or 6 carbon atoms. [1-5] The composition according to any one of [1-1] to [1-4] wherein the above organic compound is diethyl zinc. [1-6] The composition according to any one of [1-1] to [1-5], wherein the electron-donating organic solvent is tetrahydronaphthol. [1-7] The composition according to any one of [1-2] to [1-6] wherein the above film is formed using 147876.doc 201109279 The organic solvent is 1,4-dioxane. [1-8] A method for producing an oxidized film, comprising: applying a composition according to any one of [1_1] to [1-7] to a surface of a substrate, and then applying the obtained coating film to 300 C or less Heating is performed at a temperature to form a zinc oxide film. [1-9] The production method according to [1-8], wherein the zinc oxide film has an average transmittance of 80% or more for visible light. The second aspect is a composition for producing an oxidized film doped with a Group 3B element, and a method for producing an oxidized film using the composition. The second aspect is a composition comprising the above product, wherein the addition ratio of the elemental compound in the solution S2 is in the range of 0.005 to 〇·3 with respect to the molar ratio of the above organic compound. And the organic compound is obtained by hydrolysis to the upper part. The composition of the second aspect is described in the following 2_丨~2_1 2 'the second aspect of the production method as described in the following 2-1 3 to 2-14. [2-1] A composition for the production of a doped oxidized film, which comprises a zinc compound of the following formula (1), and a steroid element of the following formula (7) or the following formula (3) At least one of the compounds is dissolved in an electron-donating organic solvent, and water is added to the solution to at least partially hydrolyze the organozinc compound, and the above-mentioned 3 lanthanum compound is relative to the organic compound. The ratio of the ear to 〇〇〇5 to 0 3 is: R 丨-Zn-Ri (1) (wherein R is a linear or branched alkyl group having a carbon number of 77) 147876.doc •10· 201109279

McXd*aH20 (2) (式中,M為3B族元素,X為鹵素原子、硝酸或硫酸,於X 為鹵素原子或硝酸時,c為1、d為3,於X為硫酸時,c為 2、d為3、a為0~9之整數)McXd*aH20 (2) (wherein M is a Group 3B element, X is a halogen atom, nitric acid or sulfuric acid. When X is a halogen atom or nitric acid, c is 1, d is 3, and when X is sulfuric acid, c is 2, d is 3, a is an integer from 0 to 9)

I R4 〇 (式中,M為3B族元素,R2、R3、R4獨立為氫、碳數1〜7之 直鏈或支鏈烷基、碳數1〜7之直鏈或支鏈烷氧基、羧酸 基、或乙醢丙酮基’進而L為含有氮、氧或磷之配位性有 機化合物,η為0~9之整數)。 [2-2] 如[2-1]之組合物,其中上述產物包含上述邛族元素化 合物之水解物。 [2-3] 、如[2-1]或[2-2]之組合物,其中上述水之添加量相對於上 〇 (3)I R4 〇 (wherein M is a Group 3B element, R 2 , R 3 , and R 4 are independently hydrogen, a linear or branched alkyl group having 1 to 7 carbon atoms, or a linear or branched alkoxy group having 1 to 7 carbon atoms; And a carboxylic acid group or an acetoacetone group and further L is a coordinating organic compound containing nitrogen, oxygen or phosphorus, and η is an integer of 0 to 9). [2-2] The composition according to [2-1], wherein the above product contains the hydrolyzate of the above steroid element compound. [2-3] The composition of [2-1] or [2-2], wherein the amount of water added is relative to the upper layer (3)

CD 述有機辞化合物及3Β族元素化合物之合計量之 〇.4〜0.9之範圍。 、斗比為 [2-4] 一種摻雜氧化鋅薄膜製造用組合物,其包含 式而得之產物,即於將通式⑴所示之有機辞方 供電子性有機溶劑而成之溶液中添加’合解於 合物至少部分水解後,以相對於上述有=機鋅化 比成為〇〜〇·3之比例之方式添加通式:5物之莫耳 之3Β族元素化合物之至少1種: )或通式(3)所示 147876.doc (i) 201109279 R丨-Zn-R丨 (式中,R1為碳數1〜7之直鏈或支鏈烷基)The range of 〇.4 to 0.9 in the total amount of the organic compound and the three steroidal compound. [2] A composition for the production of a doped zinc oxide film, which comprises a product of the formula, that is, a solution obtained by supplying an organic solvent to the organic organic solvent represented by the formula (1) After the addition of the complex solution to at least partial hydrolysis of the compound, at least one of the 3 steroid element compounds of the general formula: 5 is added so as to be in a ratio of 〇 to 〇·3 with respect to the above-mentioned machine-zincification ratio. : ) or 147876.doc (i) 201109279 R丨-Zn-R丨 represented by the formula (3) (wherein R1 is a linear or branched alkyl group having 1 to 7 carbon atoms)

McXd.aH20 (2) (式中,Μ為3B族元素’ X為鹵素原子、硝酸或硫酸,於X 為鹵素原子或确酸時’ c為1、d為3,於X為硫酸時,c為 2、d為3、a為0〜9之整數) R8-M-R3 I * (L) n (3) R4 (式中,Μ為3B族元素’ R2、R3、R4獨立為氫、碳數卜7之 直鏈或支鏈烷基、碳數1〜7之直鏈或支鏈烷氧基、羧酸 基、或乙醯丙酮基,進而L為含有氮、氧或磷之配位性有 機化合物’ η為0〜9之整數)。 [2-5] 如[2-4]之組合物’其中上述產物實質上不含上述族 元素化合物之水解物。 [2-6] 量係相對於 如U-4]或[2_5]之組合物,其中上述水之添加 上述有機鋅化合物之莫耳比為〇 4〜Q.9之 。 [2-7] 如[2 1]至[2-6]中任一項之組合物 戎Μ、叱- 丹甲上4組合与 不之有機鋅化合物之含量為〇 5質量% [2-8] 卜。 [1]至[2-7]中任一項之組合物,其包 解於與上述彳致雷 、上述i 電子性有機溶劑不同的薄膜形成用有表 I47876.doc •12· 201109279 中而得之溶液。 [2-9] 如[2-1]至[2-8]中任一項之組合物,其中上述產物之濃度 為1〜30質量%之範圍。 [2-10] 如[2-1]至[2-9]中任一項之組合物,其中上述有機鋅化合 物係R1為碳數1、2、3、4、5、或6之烧基的化合物。 [2-11]McXd.aH20 (2) (wherein Μ is a group 3B element 'X is a halogen atom, nitric acid or sulfuric acid, when X is a halogen atom or a certain acid, 'c is 1, d is 3, when X is sulfuric acid, c 2, d is 3, a is an integer of 0 to 9) R8-M-R3 I * (L) n (3) R4 (wherein Μ is a group 3B element 'R2, R3, R4 are independently hydrogen, carbon a linear or branched alkyl group of 7 or a straight or branched alkoxy group having a carbon number of 1 to 7, a carboxylic acid group or an acetoacetone group, and further L is a complex containing nitrogen, oxygen or phosphorus. The organic compound 'η is an integer from 0 to 9). [2-5] The composition of [2-4] wherein the above product is substantially free of the hydrolyzate of the above-mentioned group element compound. [2-6] The amount is relative to a composition such as U-4] or [2_5], wherein the addition of the above water to the organic zinc compound has a molar ratio of 〇 4 to Q.9. [2-7] The composition of any one of [2 1] to [2-6], 叱, 叱-丹甲上4, and the content of the organic zinc compound is 〇5 mass% [2-8] ] Bu. The composition according to any one of [1] to [2-7], which is obtained by forming a film different from the above-mentioned i-electron organic solvent, and is formed in Table I47876.doc •12·201109279 Solution. [2-9] The composition according to any one of [2-1] to [2-8] wherein the concentration of the above product is in the range of 1 to 30% by mass. [2] The composition according to any one of [2-1] to [2-9] wherein the above-mentioned organozinc compound R1 is a carbon group having 1, 2, 3, 4, 5 or 6 carbon atoms. compound of. [2-11]

如[2-1]至[2-1〇]中任一項之組合物,其中上述有機辞化 合物為二乙基鋅。 [2-12] 如[2-1 ]至[2-11 ]中任一項之組合物,其中上述供電子性 有機溶劑為1,4-二崎烧。 [2-13] —種摻雜氧化鋅薄膜之製造方法,其包括:將如至 [2-12]中任一項之組合物塗佈於基板表面,繼而將所得之 塗佈膜於以下之溫度下進行加熱而形成摻雜有则 元素之氧化鋅薄膜。 [2-14] 光具有80%以上之平均透射率 第3態樣係摻雜有3Β族元素 乳化鮮溥膜製造用組合 包含以下產物之組合物,該產物係使用沸 點為110 C U上之供電子性有機溶The composition of any one of [2-1] to [2-1], wherein the above organic compound is diethyl zinc. [2] The composition according to any one of [2-1] to [2-11] wherein the electron-donating organic solvent is 1,4-bisaki. [2-13] A method for producing a doped zinc oxide film, comprising: applying a composition according to any one of [2-12] to a surface of a substrate, and then applying the obtained coating film to the following Heating is performed at a temperature to form a zinc oxide thin film doped with an element. [2-14] Light has an average transmittance of 80% or more. The third aspect is doped with a composition of 3 lanthanide emulsified fresh ruthenium film. The composition comprising the following products is a product having a boiling point of 110 CU. Electronic organic solvent

A 3有沸點為1 l〇°C 147876.doc -13- 201109279 以上之供 作為供電 而獲得。 [3-1]A 3 has a boiling point of 1 l 〇 ° C 147876.doc -13- 201109279 The above supply is obtained as power supply. [3-1]

電子性有機溶劑作A 子性有機溶劑,並將有混合有機溶劑’來 第 有機鋅化合物至少部分水解 装之組合物如以下3-1〜3-10所記載。 下述二 其包含以如下方式所得之產物,即,於將 之供:二)所不之有機鋅化合物溶解於沸點為110。。以上 性有機溶彿點為⑽以上之供電子 範圍之濃度的、、:^ &有機溶劑而成4〜12質量%之 合液中,以相對於上述有機鋅化合物之莫耳 〇.4〜0.8之範圍之方式添加水,而至少將上述有 化合物部分水解:The electronic organic solvent is used as the A-organic organic solvent, and the mixed organic solvent is used to at least partially hydrolyze the organozinc compound. The composition is as described in the following 3-1 to 3-10. The following two products contain a product obtained by dissolving: b) an organic zinc compound having a boiling point of 110. . The above organic solvent point is a concentration of (10) or more in the range of the electron donating range, and the organic solvent is formed in a liquid mixture of 4 to 12% by mass, based on the above-mentioned organic zinc compound. Water is added in a manner of a range of 0.8, and at least the above-mentioned compound is partially hydrolyzed:

Rl;Zn-R, (1) (式中,R為碳數1〜7之直鏈或支鏈烧基)。 [3-2] 一種組合物,其係於如[3 —丨]之組合物中,以相對於上述 有機鋅化合物之莫耳比成為0.005〜〇· 1之比例之方式添加下 述通式(2)所示之有機3B族元素化合物而獲得: R2—M —R3 ί * (L) n ¢2) R4 (式中,Μ為3B族元素,R2、R3、R4獨立為氫、碳數1〜7之 直鏈或支鏈烷基、碳數卜7之直鏈或支鏈烷氧基、羧酸、 或乙醯丙酮基,L為含有氮、氧、或磷之配位性有機化合 物’ η為〇〜9之整數)。 [3-3] J47876.doc -14- 201109279 一種組合物,其包含以如下方式所得之產物,即,於將 下述通式(1)所示之有機鋅化合物、Rl; Zn-R, (1) (wherein R is a linear or branched alkyl group having a carbon number of 1 to 7). [3-2] A composition in which the following formula is added in a composition such as [3 - oxime] in such a manner that the molar ratio of the above organozinc compound becomes 0.005 to 〇·1 ( 2) The organic group 3B element compound is obtained: R2—M—R3 ί * (L) n ¢2) R4 (wherein, Μ is a group 3B element, and R2, R3, and R4 are independently hydrogen, carbon number 1 a straight or branched alkyl group of ~7, a linear or branched alkoxy group of carbon number 7, a carboxylic acid, or an acetoacetone group, and L is a coordinating organic compound containing nitrogen, oxygen, or phosphorus. η is an integer of 〇~9). [3-3] J47876.doc -14- 201109279 A composition comprising a product obtained by the following method, that is, an organozinc compound represented by the following formula (1),

Ri-Zn-R1 ⑴ (式中,R1為碳數1〜7之直鏈或支鏈烷基) 相對於上述有機鋅化合物之莫耳比為0.005〜0.09之比例 的下述通式(2)或(3)所示之有機3B族元素化合物Ri-Zn-R1 (1) (wherein, R1 is a linear or branched alkyl group having 1 to 7 carbon atoms), and the following formula (2) is a ratio of the molar ratio of 0.003 to 0.09 with respect to the above organozinc compound. Or the organic 3B group compound shown in (3)

—M—R 3 (L5 η ⑵ Ο—M—R 3 (L5 η (2) Ο

(式中,Μ為3Β族元素,R2、R3、r4獨立為氫、碳數卜7之 直鏈或支鏈烷基、碳數1〜7之直鏈或支鏈烷氧基、羧酸、 或乙酿丙酮基,L為含有氮、氧、或罐之配位性有機化合 物,η為〇〜9之整數)(wherein, Μ is a 3 steroid element, R 2 , R 3 , and r 4 are independently hydrogen, a linear or branched alkyl group of carbon number 7, a linear or branched alkoxy group having 1 to 7 carbon atoms, a carboxylic acid, Or a acetonyl group, L is a coordinating organic compound containing nitrogen, oxygen, or a can, and η is an integer of 〇~9)

McXd-aH2〇 (3) (式中,Μ為3B族元素,X為鹵素原子、石肖酸或硫酸,於χ 為南素原子或石肖酸時,c為i、d為3,於乂為硫酸時,以 2、d為3、a為〇〜9之整數)。 溶解於沸點為llGt以上之供電子性有機溶劑、或含有 彿點為⑽以上之供電子性有機溶劑作為主成分之混合 =機溶劑而成上述有機辞化合物與有機戦元素化合物之 合計濃度為4〜12質量%之範圍的溶液中,以相對於 :鋅化合物之莫耳比成狀4〜G.8之範圍之方式添加水,而 至J將上述有機辞化合物部分水解。 [3-4] 其中上述供電子性有 如[3 -1 ]至[3-3]中任一項之組合物 147876.doc -15- 201109279 機溶劑係沸點為230¾以下。 [3-5] [1 ]至[3 4]中任—項之组合物,其中上述有機辞化合 物為二乙基辞。 [3-6] 如[3-2]至[3_5]中任—項之組合物,其中上述通式⑺之 有機3B族元素化合物為三甲基銦。 [3-7] [2]至[3 5]中任一項之組合物,其中上述通式(2)之 有機3B族兀素化合物為三乙醯丙酮鋁、三乙醯丙酮鎵、三 乙S&丙§同錄j。 [3-8] 如[3-2]至[3_5]中任—項之組合物,其中上述有機戰 70素化合物為氣化鋁、氯化鎵、氯化銦。 [3-9] 如[3-1]至[3-8]中任一項之組合物,其中上述供電子性有 機溶劑為1,2-二乙氧基乙烷。 [3-10] ’其中上述混合有機溶 混合溶劑。 如[3-1]至[3-8]中任一項之組合物 Μ為1,2 - 一乙氧基乙院與四氫α夫喊之 本發明之第2側面係作為本發明之第4態樣的氧化辞薄膜 之製造方法。本發明之第2側面(第4態樣)之氧化鋅薄獏之 製造方法中使用上述本發明之第"則面之第3態樣的組合 物。本發明之第2側面(第4態樣)之製造方法如以下4 ^ : 147876.doc 16- 201109279 ι〇所記载。 [4-1] 有戰以上之方法,該氧化鋅薄膜對可見光具 該製造方法包:i二積電阻率未達8χι°·2 一McXd-aH2〇(3) (wherein, Μ is a Group 3B element, X is a halogen atom, a sulphuric acid or a sulfuric acid, and when χ is a Nansin atom or a sulphuric acid, c is i and d is 3, in 乂In the case of sulfuric acid, 2, d is 3, and a is an integer of 〇~9). The total concentration of the organic compound and the organic lanthanum compound is 4, which is dissolved in an electron-donating organic solvent having a boiling point of llGt or more or a mixed-electrolyte solvent containing an electron-donating organic solvent having a point of (10) or more as a main component. In the solution in the range of ~12% by mass, water is added in a range of 4 to G.8 with respect to the molar ratio of the zinc compound, and the organic compound is partially hydrolyzed to J. [3-4] The composition having the above electron donating property as in any one of [3-1] to [3-3] 147876.doc -15- 201109279 The solvent of the solvent is 2303⁄4 or less. [3-5] The composition of any one of [1] to [3, wherein the above organic compound is diethyl. [3-6] The composition of any one of [3-2] to [3_5], wherein the organic Group 3B element compound of the above formula (7) is trimethylindium. [3] The composition according to any one of [2] to [3] wherein the organic 3B group halogen compound of the above formula (2) is aluminum triacetate, gallium triacetate, triethyl S& [3-8] The composition according to any one of [3-2] to [3_5], wherein the organic warfare 70 compound is gasified aluminum, gallium chloride or indium chloride. [3-9] The composition according to any one of [3-1] to [3-8] wherein the electron-donating organic solvent is 1,2-diethoxyethane. [3-10] wherein the above mixed organic solvent is mixed. The composition of any one of [3-1] to [3-8] is 1,2-ethoxylated and tetrahydro-alpha, and the second aspect of the invention is the first aspect of the present invention. A method for producing a 4-state oxide film. In the method for producing a zinc oxide thin crucible according to the second aspect (fourth aspect) of the present invention, the composition of the third aspect of the invention described above is used. The manufacturing method of the second aspect (fourth aspect) of the present invention is as described in 4^: 147876.doc 16-201109279 ι. [4-1] In the above method, the zinc oxide film is visible to the visible light. The manufacturing method includes: i the second resistivity is less than 8 χι°·2

BiC於睹以下操作:將下述組合物八、 B或C於惰性氣體環 塗佈膜進行加熱;U於基板表面對所得之 組合物A :The BiC is operated in the following manner: The following composition of the composition of the eighth, B or C is heated on the inert gas ring coating film; U is applied to the surface of the substrate to obtain the composition A:

该組合物包含以如下方式所得之產物,#,於將下述通 ()所不之有機辞化合物溶解於沸點為110。(:以上之供電 ::有機溶劑、或含有沸點為H〇°C以上之供電子性有機 六知丨作為主成分之混合有機溶劑而成4〜12質量%之範圍之 又的/谷液中,以相對於上述有機鋅化合物之莫耳比成為 〇.4 0’8之相之方式添加水,而至少將上述有機辞化合物 部分水解,The composition contained the product obtained in the following manner, and was dissolved in a boiling point of 110 by the following organic compound. (: The above-mentioned power supply: an organic solvent or a mixed organic solvent containing an electron-donating organic hexaphyrin having a boiling point of H 〇 ° C or more as a main component, and further in the range of 4 to 12% by mass Adding water in such a manner that the molar ratio of the above organozinc compound becomes 〇.40'8, and at least partially hydrolyzing the above organic compound,

Rl-Zn~Rl (1) (式中,R為碳數1〜7之直鏈或支鏈烧基); 組合物B : 5亥組合物係於上述組合物A中,以相對於上述有機鋅化 &物之莫耳比成為0.005〜0.1之比例之方式添加下述通式 (2)所示之有機38族元素化合物而獲得, * (L) η (2) R4 (式中’ Μ為3B族元素,R2、R3、R4獨立為氫、碳數^7之 147876.doc -17- 201109279 直鏈或支鏈烷基、碳數丨〜7之直鏈或支鏈烷氧基、羧酸、 或乙醯丙酮基,L為含有氮、氧、或磷之配位性有機化合 物’ η為〇〜9之整數); 組合物C : 該組合物包含以如下方式所得之產物,即,於將下述通 式(1)所示之有機鋅化合物、 R 丨-Zn-Ri ⑴ (式中,R1為碳數1〜7之直鏈或支鏈烷基) 相對於上述有機鋅化合物之莫耳比為〇 〇〇5〜〇 〇9之比例 的下述通式(2)或(3)所示之有機3B族元素化合物 M—R3 (式中,Μ為3B族7C素,R2、R3、R4獨立為氫、碳數卜7之 直鏈或支鏈烷基、碳數丨〜7之直鏈或支鏈烷氧基 '羧酸、 或乙醯丙酮基’ L為含有氮、氧、或鱗之配位性有機化合 物,η為〇〜9之整數)Rl-Zn~Rl (1) (wherein R is a linear or branched alkyl group having 1 to 7 carbon atoms); Composition B: 5H composition is in the above composition A to be relative to the above organic The organic group 38 element compound represented by the following formula (2) is added in such a manner that the molar ratio of the zincation & substance is 0.005 to 0.1, and *(L) η (2) R4 (wherein Μ Is a group 3B element, R2, R3, and R4 are independently hydrogen, and the number of carbons is 147876.doc -17- 201109279 linear or branched alkyl group, linear or branched alkoxy group having a carbon number of 77, carboxyl Acid, or acetamyl acetonate, L is a coordinating organic compound containing nitrogen, oxygen, or phosphorus 'n is an integer of 〇~9); Composition C: The composition comprises a product obtained in the following manner, ie, An organozinc compound represented by the following formula (1), R 丨-Zn-Ri (1) (wherein R 1 is a linear or branched alkyl group having 1 to 7 carbon atoms), relative to the above organozinc compound The organic 3B group compound M-R3 represented by the following formula (2) or (3) in which the molar ratio is 〇〇〇5 to 〇〇9 (wherein Μ is a 3B group 7C, R2 R3 and R4 are independently hydrogen or carbon number 7 straight chain or a branched alkyl group, a linear or branched alkoxy 'carboxylic acid having a carbon number of 丨7 or a acetylacetone group 'L is a coordinating organic compound containing nitrogen, oxygen, or scales, and η is 〇~9 Integer)

McXd*aH20 ⑺ 、硝酸或硫酸,於X 於X為硫酸時,C為 (式中,Μ為3B族元素,X為鹵素原子 為鹵素原子或硝酸時,c為1、d為3, 2、d為3、a為0〜9之整數)。 溶解於沸點為⑽以上之供電子性有機溶劑、或含有 ’弗點為un:以上之供電子性有機溶劑作為主成分之混合 有機溶劑而成上述有機鋅化合物與有機戰元素化合物之 合計濃度為4〜12質量%之範圍的溶液中,以相對於上述有 147876.doc -18- 201109279 機鋅化合物之莫耳比成為0.448之範圍之方式添加水,而 至少將上述有機鋅化合物部分水解。 [4-2] 其中上述惰性氣體環 如[4-1]之氧化鋅薄膜之製造方法 境含有水蒸氣。 [4-3] 氣體環境係 如[4-2]之製造方法,其中含有水蒸氣之惰性 相對濕度為2〜1 5%之範圍。McXd*aH20 (7), nitric acid or sulfuric acid, when X is sulfuric acid for X, C is (wherein, Μ is a group 3B element, and X is a halogen atom or a nitric acid, c is 1, d is 3, 2, d is 3, a is an integer from 0 to 9). The total concentration of the organic zinc compound and the organic warfare element compound is determined by being dissolved in an electron-donating organic solvent having a boiling point of (10) or more, or a mixed organic solvent containing an electron-donating organic solvent having an atomic point of not more than the above. In the solution in the range of 4 to 12% by mass, water is added in such a manner that the molar ratio of the zinc compound of 147876.doc -18 to 201109279 is 0.448, and at least the above organozinc compound is partially hydrolyzed. [4-2] The above-mentioned inert gas ring, such as the zinc oxide film of [4-1], contains water vapor. [4-3] The gas environment is a manufacturing method according to [4-2], wherein the inert humidity of the water vapor is in the range of 2 to 1.5%.

[4-4] 種氧化辞薄膜之製造方法,該氧化辞薄膜對可見光具 有嶋以上之平均透射率且體積電阻率未達1x10.3 n.cm, :製造方法包括:將組合物A、8或。於含有水蒸氣之惰性 氣體環境下,喷塗於經加熱之基板表面; 組合物A : 該组合物包含以如下方式所得之產物,W,於將下述通 式(1)所示之有機辞化合物溶解於沸點為1UTC以上之供電 :性有機溶劑、或含有濟點為11G°C以上之供電子性有機 /谷劑作為主成分之混合有機溶劑而成4〜12質量%之範圍之 X的溶液中,以相對於上述有機辞化合物之莫耳比成為 〇.4〜0.8之範圍之方式添加水,而至少將上述有機鋅化合物 部分水解, R^Zn-R1 ⑴ (式中,R1為碳數〗〜7之直鏈或支鏈烷基); 組合物B : 147876.doc •19- 201109279 該組合物係於上述組合物A中,以相對於上述有機鋅化 合物之莫耳比成為〇 〇〇5〜〇1之比例之方式添加下述通式 (2)所示之有機3B族元素化合物而獲得, R2—M~R;[4-4] A method for producing an oxidized film, the oxidized film having an average transmittance of more than 嶋 for visible light and a volume resistivity of less than 1×10.3 n.cm, the method of manufacturing comprising: combining the compositions A and 8 or. Spraying on the surface of the heated substrate in an inert gas atmosphere containing water vapor; Composition A: The composition contains the product obtained in the following manner, and is expressed in the following formula (1) The compound is dissolved in a power supply having a boiling point of 1 UTC or more: an organic solvent, or a mixed organic solvent containing an electron-donating organic/grain agent having a point of 11 G ° C or more as a main component, and is in the range of 4 to 12% by mass. In the solution, water is added in such a manner that the molar ratio of the above organic compound is in the range of 〇.4 to 0.8, and at least the above organozinc compound is partially hydrolyzed, R^Zn-R1 (1) (wherein R1 is carbon a linear or branched alkyl group of ~7; Composition B: 147876.doc • 19-201109279 The composition is in the above composition A, and becomes 〇〇 with respect to the molar ratio of the above organozinc compound. Adding the ratio of 〇5 to 〇1 as an organic 3B group compound represented by the following formula (2), and obtaining R2 to M~R;

R (L) η ¢2) (式中,Μ為3Β族元素,r2、R3、R4獨立為氫、碳數丨〜7之 直鏈或支鏈烷基、碳數丨〜7之直鏈或支鏈烷氧基、羧酸、 或乙醯丙酮基,L為含有氮、氧、或磷之配位性有機化合 物,η為〇〜9之整數); 組合物C : 該組合物包含以如下方式所得之產物即,於將下述通 式(1)所示之有機辞化合物、 R'-Zn-R1 、 ⑴ (式中,R1為碳數1〜7之直鏈或支鏈烷基) 相對於上述有機辞化合物之莫耳比為〇 〇〇5〜〇 〇9之比例 的下述通式(2)或(3)所示之有機3B族元素化合物 (2)R (L) η ¢2) (wherein, Μ is a 3 steroid element, r2, R3, and R4 are independently hydrogen, a linear or branched alkyl group having a carbon number of 丨7, a linear chain having a carbon number of 丨7 or a branched alkoxy group, a carboxylic acid, or an acetoacetone group, L is a coordinating organic compound containing nitrogen, oxygen, or phosphorus, and η is an integer of 〇~9); Composition C: The composition is as follows The product obtained by the method is an organic compound represented by the following formula (1), R'-Zn-R1, (1) (wherein R1 is a linear or branched alkyl group having 1 to 7 carbon atoms) An organic 3B group compound (2) represented by the following formula (2) or (3) in which the molar ratio of the above organic compound is 〇〇〇5 to 〇〇9

R (L) η (式中’ Μ為3Β族元素,r2、r3、立為氮、碳數η二 直鏈或支鏈烧基、碳數卜7之直鏈或支鏈炫氧基、叛酸 3、酿丙酮S L為含有氮、氧、或碌之配位性有機化< 物’ η為〇〜9之整數)R (L) η (wherein 'Μ is a 3 Β element, r2, r3, is a nitrogen, a carbon number η is a straight or branched chain alkyl group, a carbon number is 7 straight or branched chain oxy, rebellion Acid 3, brewing acetone SL is a complex organic compound containing nitrogen, oxygen, or a mixture. The substance 'η is an integer of 〇~9)

McXd*aH2〇 (,, > (3) "’ Μ為3B族元素,χ為鹵素原子、硝酸或硫酸,於: 147876.d〇c •20- 201109279 為鹵素原子或硝酸時’ C為1、d生 2、dh . d為3,於X為硫酸時,c為 2 d為3、a為〇〜9之整數)。 溶解於沸點為1HTC以上之供電 、* 电卞性有機溶劑、或合右 彿點為11 〇°C以上之供電子性有 士 w 有機溶劑作為主成分之混人 有機溶劑而成上述有機辞化合物盘 ° 人呌、* # a /、有機3丑族兀素化合物之 5计浪度為4〜12質量%之範圍的溶液中,以 機辞化合物之莫耳比成為〇.4〜〇 乂 „ Nu, 、 ·8之範圍之方式添加水,而 Ο Ο 至乂將上述有機辞化合物部分水解。 [4-5] 二:]之氧化辞薄膜之製造方法,其中含有水蒸氣之惰 矣氧體被境係藉由在大氣麼或加璧下將水蒸氣供給 表面附近而形成。 攸 [4-6] 如隊氧化鋅薄臈之製造方 溫度為40(TC以下。 ^板表面之加熱 [4-7] 如[4·5]或[4·6]之氧化鋅薄 寻犋之製造方法,其中上述水菽 氣之供給係以水相對於所祉 … 耵於所供給之上述組合物中之鋅的 比成為0.1〜5之範圍之方式來進行。 、 [4-8] 如[4 1]至[4·7]中任—項之氧化鋅薄膜之製造方法,苴中 上述供電子性有機溶劑係滞點為23代以下。 八 [4-9] 如[4-1]至[4-8]中杯—τ5 項之組合物,其中上述有機辞化合 147876.doc •21· 201109279 物為二乙基辞。 [4-1〇] 如[4-1]至[4-9]中任一 上述通式(2)之有機3B族 [4-11] 項之氧化鋅薄膜之製造方法,其中 元素化合物為三甲基銦。 上 如[4-Π至[4-9]中任一項之氧化辞薄膜 述通式(2)之有機3B族元素化合物為 乙醯丙酮鎵、三乙醯丙酮銦。 [4-12] 之製造方法,其中 三乙醯丙酮銘、三 士 [4 1]至[4-9]中任—項之氧化鋅薄膜之製造方法, 上述有機3B族元素化合物為氣化|g、氣化鎵、氯化姻^ [4-13] 如[4-!]至[4_12]中任—項之氧化鋅薄膜之製造方法,^ 中上述供電子性有機溶劑為U二乙氧基乙烧。 人 [4-14] 如[4-1]至[4-12]中任一項 中上述混合有機溶劑為丨,2_ 合溶劑。 之氧化鋅薄膜之製造方法,其 二乙氧基乙烷與四氫呋喃之混 [4-15] 任一項 ,靜電薄膜,其包含使用如[叫至[心14]中 之製造方法而製造之氧化鋅薄膜。 [4-16] 一種紫外線截㈣膜,其包含使用如叫]印, 項之製造方法而製造之氧化鋅薄膜。 I47876.doc -22· 201109279 [4-17] 一種透明電極薄膜,其包含使用 /、I 3 1定用如[44]至[414]中任一 項之製造方法而製造之氧化鋅薄膜。 本發明之第3側面係作為本發明之楚 , S 3之第5態樣的氧化鋅薄膜 形成用組合物及摻雜有3B族元素之# 畜之虱化鋅薄膜之製造方 法。本發明之第3側面(第5態樣)之氧化鋅薄膜形成用組合 物及摻雜有3Β族元素之氧化鋅薄膜之製造方法如以下% 1〜5-11所記載。 Ο [5-1] 一種氧化辞薄膜形成用組合物,其特徵在於:在具有供 電子性之有機溶劑中含有下述通式⑴所示之有機鋅化合物 以及下述通式(20)所示之有機3Β族元素化合物,且上述有 機3Β族元素化合物相對於上述有機鋅化合物之莫耳比 0.001〜0.3之範圍; … R^Zn-R1 ⑴McXd*aH2〇(,, > (3) "' Μ is a 3B group element, χ is a halogen atom, nitric acid or sulfuric acid, at: 147876.d〇c •20- 201109279 when it is a halogen atom or nitric acid, 'C is 1, d, 2, dh. d is 3, when X is sulfuric acid, c is 2 d is 3, a is an integer of 〇~9). The above-mentioned organic compound is dissolved in a power supply having a boiling point of 1 HTC or more, a *electrolytic organic solvent, or a mixed organic solvent containing an electron-donating organic solvent as a main component at a concentration of 11 〇 ° C or higher. In the solution of the range of 4 to 12% by mass of the human body, * # a /, organic 3 ugly compound, the molar ratio of the compound is 〇.4~〇乂„ Water is added in a manner of Nu, , and 8, and the above organic compound is partially hydrolyzed by Ο 乂 to 。. [4-5] A method for producing an oxidized film containing water vapor and an inert gas containing water vapor The environment is formed by supplying water vapor to the vicinity of the surface in the atmosphere or under the enthalpy. 攸[4-6] The temperature of the manufacturing of the zinc oxide thin layer is 40 (TC or less. ^The heating of the surface of the board [4 -7] a method for producing a zinc oxide thin smear according to [4·5] or [4·6], wherein the supply of the water sputum gas is based on the supplied water in the above composition The ratio of zinc is in the range of 0.1 to 5. [4-8] As in [4 1] to [4·7], the zinc oxide thin In the production method, the electron-donating organic solvent has a hysteresis of 23 or less. [8-9] The composition of the cup-τ5 in [4-1] to [4-8], wherein the organic辞合合147876.doc •21· 201109279 The substance is diethyl. [4-1〇] The organic 3B group of any of the above formula (2) [4-1] to [4-9] [4- 11) The method for producing a zinc oxide film, wherein the elemental compound is trimethyl indium. The organic 3B group of the general formula (2) of the oxidized film of any one of [4-Π to [4-9] The elemental compound is gallium acetyl acetonate or indium acetoacetate. The method for producing the zinc oxide film of any of the three items: The method for producing the above-mentioned organic group 3B element compound is a method for producing a zinc oxide film of gasification|g, gallium hydride, or galvanic acid [4-13], such as [4-!] to [4_12] The above-mentioned electron-donating organic solvent is U-diethoxyethane. Human [4-14] The mixed organic solvent in any one of [4-1] to [4-12] is hydrazine, 2- Solvent. Method for producing zinc oxide film, diethoxyethane and tetrahydrofuran Any one of [4-15], an electrostatic film comprising a zinc oxide film produced by using the manufacturing method of [Call to [14]. [4-16] An ultraviolet (C) film comprising A zinc oxide film produced by the method of manufacturing the article, i.S., pp. -22, 201109279 [4-17] A transparent electrode film comprising the use of /, I 3 1 such as [44] to [414 A zinc oxide film produced by the manufacturing method of any one of the methods. The third aspect of the present invention is a method for producing a zinc oxide thin film forming composition according to the fifth aspect of the present invention, and a zinc-based zinc thin film doped with a 3B group element. The zinc oxide thin film-forming composition of the third aspect (the fifth aspect) of the present invention and the method for producing a zinc oxide thin film doped with a three-lane element are as described in the following % 1 to 5-11. 5-1 [5-1] A composition for forming an oxidized film, which comprises an organozinc compound represented by the following formula (1) and a formula (20) represented by the following formula (20) in an organic solvent having electron-donating properties. An organic 3 steroid element compound, and the molar ratio of the above organic 3 lanthanum element compound to the above organozinc compound is 0.001 to 0.3; R^Zn-R1 (1)

(式中’R1為碳數1〜7之直鏈或支鏈炫基)(wherein 'R1 is a linear or branched thio group having 1 to 7 carbon atoms)

Rzo-M-R30 (2 0)Rzo-M-R30 (2 0)

I R40 (式中,Μ為3B族元素,r2〇、r3〇&r4〇獨立為氳' 或碳數 1〜7之直鏈或支鏈烷基)。 [5-2] 如[5-1]之組合物,其中上述3]3族元素為B、A卜仏或 In 〇 [5-3] 147876.doc -23- 201109279 如[5-1]或[5-2]之組合物,其中上述有機鋅化合物中,… 為乙基’上述有機3B族元素化合物中,μ為鋁,R2〇、r30 及R40均為乙基。 [5-4] 如[5-1]或[5-2]之組合物’其中上述有機鋅化合物中,^ 為乙基’上述有機3B族元素化合物中,M為鎵,r2〇、r3〇 及R40均為甲基。 [5-5] 如[5-^15-2]之組合物,其中上述有機辞化合物中,^ 為乙基,上述有機3B族元素化合物中,M為銦,r2〇 及R40均為甲基。 [5-6] ,其中上述有機鋅化合 15質量。/。以下。 如[5-1]至[5-5]中任一項之組合物 物與有機3B族化合物之合計濃度為 [5-7] 項之組合物, 如[5-1]至[5-6]中任一 一異丙_。 其中上述有機溶劑為 [5-8] 薄膜之製造方法,其特徵 一種摻雜有3B族元素之氧化鋅 在於:在大氣壓或加壓下、於I R40 (wherein Μ is a Group 3B element, r2〇, r3〇&r4〇 is independently a 氲' or a linear or branched alkyl group having a carbon number of 1 to 7). [5-2] The composition of [5-1], wherein the above 3] group 3 element is B, A 仏 or In 〇 [5-3] 147876.doc -23- 201109279, such as [5-1] or [5-2] The composition of the above-mentioned organozinc compound, wherein is an ethyl group, the compound of the above organic group 3B element, wherein μ is aluminum, and R 2 〇, r30 and R40 are each an ethyl group. [5-4] The composition of [5-1] or [5-2] wherein, in the above organozinc compound, ^ is ethyl', the above organic group 3B element compound, M is gallium, r2〇, r3〇 And R40 is a methyl group. [5-5] The composition of [5-^15-2] wherein, in the above organic compound, ^ is an ethyl group, and in the above organic group 3B element compound, M is indium, and r2〇 and R40 are both methyl groups. . [5-6] wherein the above organic zinc compound is 15 mass. /. the following. The composition of the combination of any one of [5-1] to [5-5] and the organic Group 3B compound in a concentration of [5-7], such as [5-1] to [5-6 Any one of isopropyl _. Wherein the above organic solvent is a method for producing a film of [5-8], characterized in that a zinc oxide doped with a Group 3B element is: under atmospheric pressure or under pressure,

以下之美柘、、《庳nr 予隹之衩土兄下、且30(TC 卜之基板皿度下’將如[ 於其&主工 肀任一項之組合物喷塗 於基板表面,而形成摻雜有 物嗔堂 [5.9] $几常之#U匕鋅薄膜。 如[5_8]之製造方法,其 、上述組合物之噴塗係將組合物 147876.doc -24- 201109279 自噴霧嘴以液滴大小成為1〜30 μιη之範圍之方气嘴出 將喷霧嘴與基板之距離設為50 cm以内來進行。 [5-10] 如[5-8]或[5-9]之製造方法,其中進行嘴塗之環境溫度為 40°C以下。 [5-11] 如[5_8]至[5-10]中任一項之製造方、本 ^ $表&万法,其中上述氧化辞 薄膜對可見光具有80%以上之平均透射 Ο 处町手,且表面電阻為 Ιχίο5 Ω/□以下。 [發明之效果] 本發明之第1態樣之氧化鋅薄膜製造心合物係無著火 性、操作容易,且若使用本發明之氧化辞薄膜製造用組合 物,則即便於300°C以下之、、田声下制时〜 ▲ 卜之皿度下製膜亦可製造透明氧化 辞薄膜。 本發明之第2態樣之摻雜有職元素之氧化鋅薄膜製造 用組合物係無著火性、操作容易,且若使用本發明之摻雜 有3B族兀素之氧化鋅薄膜製The following beauty, "庳nr 隹 隹 衩 衩 、 、 且 且 且 且 且 且 且 且 且 且 且 且 且 且 且 且 且 TC TC TC TC TC TC TC TC TC TC TC TC TC TC TC TC TC TC TC TC TC TC TC TC TC TC Forming a doped material 5.9堂 [5.9] $常常之#U匕 zinc film. As in [5_8] manufacturing method, the coating composition of the above composition will be 147876.doc -24- 201109279 from the spray nozzle When the droplet size is in the range of 1 to 30 μm, the distance between the spray nozzle and the substrate is set to be within 50 cm. [5-10] Manufactured as [5-8] or [5-9] The method wherein the ambient temperature of the mouth coating is 40 ° C or less. [5-11] The manufacturing method of any one of [5_8] to [5-10], the table & The film has an average transmission of 80% or more for visible light, and has a surface resistance of Ιχίο5 Ω/□ or less. [Effect of the Invention] The zinc oxide film of the first aspect of the present invention is free from ignitability. It is easy to handle, and if the composition for producing a oxidized film of the present invention is used, the film can be formed at a temperature of 300 ° C or less and under the sound of ▲ 。 A transparent oxide film can be produced. The composition for producing a zinc oxide film doped with a working element of the second aspect of the present invention is non-flammable, easy to handle, and is oxidized by using the 3B group halogen of the present invention. Zinc film system

寻联展&用組合物,則即便於300〇C 辞薄膜。 透明之摻雜有3Β族元素之氧化 右使用本發明之第3態樣之氧化鋅薄膜製造用組合物, 則於旋塗法、浸塗法中, 了裏以對可見光具有80%以上之 平均透射率且具有I#兹_ Φ I、土 積電阻率未達8χ1〇-2 Ω·ειη之特性的氧 化辞薄膜。又,若估田士 發明之氧化辞薄膜製造用組合 物,則於喷霧熱分解法中,制、皮 中 了製化對可見光具有80%以上 I47876.doc -25· 201109279 斤平句透射率且具有體積電阻率未達卜W_3之特性的 氧化鋅薄膜。 、f本A明之第4態樣之氧化鋅薄膜製造方法,於旋塗 法β塗法中,可製造對可見光具有祕以上之平均透射 率且具有體積電阻率未達8χΐ〇_2 一之特性的氧化鋅薄 、、I據本發明之氧化鋅薄膜製造方法,於喷霧熱分 解法中’可製造對可見光具有8〇%以上之平均透射率且呈 有體積電阻率未達lxl0-3n.cm之特性的氧化辞薄膜。進 、ι所衣1^之乳化鋅薄膜具有如上所述般優異之透明性盥 ¥電性,因此可應用於抗靜電薄膜、紫外線截斷薄膜、透 明電極薄膜等。 發明者等人嘗試了使用如τ方法之製膜:專利文獻 包含3B族元素化合物與有機鋅化合物之溶液的 ==丨非專利文獻2所記載之使用包含有機辞化合物與 ^㈣之溶㈣浸塗法、以及非專利文獻3、4所 ^用包㈣族元素化合物與乙酸辞之溶液时霧熱分解 A1。^,於使用旋塗法、浸塗法時僅可獲得體積電阻率 :二广以上之氧化鋅薄膜,於嘴霧熱分解法中亦僅 可獲付體積電阻率為…〜喊上之氧化鋅薄: 法獲得電阻較其更低之氧化辞薄膜。 、… 進而,於噴霧熱分解法中,#製 —下時,僅可獲得體積電阻率為二 之:化:薄膜’:無法獲得電阻較其更低之氧化辞薄:广 發月者等人嘗試利用使用將二乙基辞部分水解而 147876.doc -26 - 201109279 成之组合物、或將3Β族元素化合 成之組合物之溶液的旋塗法進行製媒::::::::: :嶋以上之平均透射率的氧化鋅薄膜(第2態樣2能 :之實施例中所得之氧化辞薄膜的體積電阻率為lxl0: cm以上’為了獲得電阻更低之氧化鋅薄膜,藉 高於第2態樣之有機溶劑之有機溶劑中實施二乙基 =有機鋅化合物之部分水解而製備之含有部分水解物的 ΟLooking for a joint exhibition & use composition, even at 300 〇C to resign the film. The composition of the zinc oxide film for the third aspect of the present invention is oxidized by a transparent doping element, and the composition for producing a zinc oxide film according to the third aspect of the present invention has an average of 80% or more for visible light in the spin coating method or the dip coating method. The oxidized film having a transmittance of I# _ Φ I and a soil resistivity of less than 8χ1〇-2 Ω·ειη. In addition, if the composition for the production of the oxidized film produced by Estonia is used in the spray pyrolysis method, the transmittance of the film is 80% or more for the visible light, and the transmittance of the sentence is 80% or more. And a zinc oxide film having a volume resistivity not exceeding the characteristics of W_3. The method for producing a zinc oxide film according to the fourth aspect of the present invention can produce an average transmittance of visible light and a volume resistivity of less than 8 χΐ〇 2 in the spin coating method. The zinc oxide thin film according to the present invention, in the spray pyrolysis method, can produce an average transmittance of more than 8% by weight for visible light and has a volume resistivity of less than lxl0-3n. Oxidation film of the characteristics of cm. The emulsified zinc film of ITO and ITO is excellent in transparency as described above, and can be applied to an antistatic film, an ultraviolet cut film, a transparent electrode film, and the like. The inventors have attempted to use a film such as a τ method: the patent document contains a solution of a compound of a group 3B element and an organic zinc compound == 丨 Non-patent document 2 contains a solution containing an organic compound and a solution of (4) The coating method and the non-patent documents 3 and 4 use the compound of the group (qua) group element and the solution of acetic acid to thermally decompose A1. ^, when using the spin coating method, dip coating method, only the volume resistivity can be obtained: the zinc oxide film of the second or wider, and only the volume resistivity can be obtained in the nozzle thermal decomposition method. Thin: The method obtains a thin film of oxidation with a lower resistance. Further, in the spray pyrolysis method, when the system is produced, only the volume resistivity is two: the film: the oxidation resistance is lower than the lower resistance: Attempts have been made to prepare media using a spin coating method using a solution in which a diethylation is partially hydrolyzed to a composition of 147876.doc -26 - 201109279 or a composition of a 3 steroidal elemental synthesis:::::::: : : A zinc oxide film having an average transmittance above 嶋 (Second aspect 2: The volume resistivity of the oxidized film obtained in the examples is lx10: cm or more 'in order to obtain a zinc oxide film having a lower electric resistance, A hydrazine containing a partial hydrolyzate prepared by partial hydrolysis of diethyl = organozinc compound in an organic solvent higher than the organic solvent of the second aspect

、·且&物,而可獲得對可見光具有8〇%以上之平均透射率、 =及可用於抗靜電薄膜等之程度之低體積電阻率的氧化辞 溥膜》 根據本發明之第5態樣,可提供-種可獲得如下摻雜有 3Β族疋素之氧化鋅薄膜的摻雜氧化鋅薄膜形成用組合物, 该摻雜有3Β族元素之氧化鋅薄膜具有對可見光之平均透射 率為8〇%以上的透明性以及表面電阻為1XU)5 Ω/□以下的低 電阻性。進而根據本發明’可提供如下方法十使㈣ 組合物,製膜時無需加熱、或即便加熱亦可以赠以下 之加熱而製造具有上述透明性與低電阻性之摻雜有3Β族元 素之氧化辞薄膜。 【實施方式】 [氧化鋅薄膜製造用組合物(第1態樣)] 發明之氧化鋅薄膜製造用組合物係包含藉由以下方式 $造之產物(以下,有時稱為部分水解物)的氧化鋅薄膜製 k用2 D ’即於將τ述通式⑴所示之有機鋅化合物溶解 於供電子性有機溶•成之溶訓中,以相對於有機辞化 147876.doc -27- 201109279 合物之莫耳比成為〇·6〜〇 9之範圍之方式添加水,而將上述 有機鋅化合物至少部分水解: ,And , and an oxidized sputum film having an average transmittance of 8% or more for visible light, and a low volume resistivity which can be used for an antistatic film or the like, according to the fifth aspect of the present invention. For example, a doped zinc oxide thin film forming composition capable of obtaining a zinc oxide thin film doped with a 3 lanthanum halogen having a mean transmittance to visible light can be provided. 8透明% or more of transparency and surface resistance of 1XU) 5 Ω/□ or less. Further, according to the present invention, the following method can be provided. The composition can be obtained by the following method: no heating is required for film formation, or heating can be carried out by heating to produce an oxidation word of a doped 3 lanthanum element having the above transparency and low electrical resistance. film. [Examples] [The composition for producing a zinc oxide thin film (first aspect)] The composition for producing a zinc oxide thin film of the present invention contains a product (hereinafter sometimes referred to as a partially hydrolyzed product) which is produced by the following method. The zinc oxide film is made of 2D', and the organozinc compound represented by the general formula (1) is dissolved in the electron-distributing organic solvent, in order to reversal with respect to organic 147876.doc -27- 201109279 The organic zinc compound is at least partially hydrolyzed by adding water in such a manner that the molar ratio of the compound becomes 〇·6 to 〇9:

Rl'Zn-Rl (1) (式中,R1為碳數1〜7之直鏈或支鏈烷基)。 關於通式⑴所示之有機辞化合物,例如石森岐洋、武 田信之、鹤田福1工化964〇66),1967、日本專利特 日㈣-細99、日本專利㈣㈣·66辦中記載有將其用: %氧丙烧之聚合觸媒。於用作環氧丙烧之聚合觸媒時,以 相對於有機鋅化合物之莫耳比成為1〇以上之方式對 有機鋅組合物添加水,而形成部分水解物。 但:,上述文獻中’關於藉由使用以相對於有機辞化人 之莫耳比成為0.6〜〇·9之範圍之方式添加水而得之 ^解物之反應產物’而在縦〇以下之溫度之加轨下; ,成透明之乳化辞薄膜’既未記載亦未暗示。本發明者 等人研究之結果可明確:只要水相對於有機辞化 加莫耳比為0.6〜0.9之範圍,則所得之包含部分讀2 ^產物在赋以下之溫度之加熱下亦可形 : 辞溥膜。藉由使莫耳比為〇.6以 之軋化 辞為基準以㈣以上之高產梓得^可以原料中所含之 π»座半獍侍有機鋅組合物, 制未反應之原料即通式⑴之有機辞化合物之殘存旦、可抑 精由使莫耳比為〇·9以下而可抑制反應中產生凝膠里又’ 供電子性有機溶劑只要為對通 物及水具有溶解性者即可,作為例子,η不之有機辞化合 二正丙驗、二異丙_、二丁醚、四氫二列:号:乙醚、 147876.doc -28- 201109279 醇一:醚、二乙二醇二甲醚、三乙二醇二甲醚等醚系溶 劑,二甲基胺、三乙基胺、三苯基胺等胺系溶劑等。作為 具有供電子性之溶劑,較好的是四氫呋喃。 作為上述通式(1)所示之化合物的Rl所表示之烷基之具 體例,可列舉:甲基、乙基、丙基、異丙基、丁基:異; 基、第二丁基、第三丁基、戊基、異戊基、新戊基、第三 戊基、己基、異己基、第二己基、第三己基、2_己基、及 ΟRl'Zn-Rl (1) (wherein R1 is a linear or branched alkyl group having 1 to 7 carbon atoms). The organic compound represented by the formula (1), for example, Shisen Mianyang, Takeda Shingen, Tsuruta Fu 1 Gonghua 964〇66), 1967, Japanese Patent Special Day (4)-fine 99, Japanese Patent (4) (4)·66 Office Use it: % oxypropylene burning polymerization catalyst. When used as a polymerization catalyst for epoxidizing, the organic zinc composition is added with water to form a partial hydrolyzate so that the molar ratio of the organozinc compound is 1 Torr or more. However, in the above document, 'the reaction product of the compound obtained by adding water in such a manner that the molar ratio of the organic morphing person becomes 0.6 to 〇·9 is less than 縦〇 Under the addition of temperature; the transparent emulsified film 'is neither documented nor implied. As a result of research by the inventors et al., it is clear that as long as the water is in the range of 0.6 to 0.9 with respect to the organic rheme and the molar ratio, the obtained partially-read 2^ product can be shaped under the heating of the following temperature: Word film. By making the molar ratio 〇.6 based on the rolling word, the high-yield (4) or higher can be used to form the π»-semi-organic organozinc composition contained in the raw material, and the unreacted raw material is a general formula. (1) The residue of the organic compound can be inhibited by making the molar ratio 〇·9 or less and suppressing the generation of gel in the reaction. The electron-donating organic solvent is soluble in the organic substance and water. Yes, as an example, η 不 的 辞 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二An ether solvent such as dimethyl ether or triethylene glycol dimethyl ether; an amine solvent such as dimethylamine, triethylamine or triphenylamine. As the solvent having electron donating property, tetrahydrofuran is preferred. Specific examples of the alkyl group represented by R1 of the compound represented by the above formula (1) include a methyl group, an ethyl group, a propyl group, an isopropyl group, and a butyl group; a base group; a second butyl group; Third butyl, pentyl, isopentyl, neopentyl, third pentyl, hexyl, isohexyl, second hexyl, third hexyl, 2-hexyl, and anthracene

G 庚基。通式⑴所示之化合物較好的是r1之碳數為卜2、 V4、5、或6之化合物。通式⑴所示之化合物特別好的是 一乙基辞。 本發明之組合物包含藉由以下方式製造之部分水解物, 即於通式⑴所示之化合物與供電子性有機溶劑之溶液中, 添加上述莫耳出夕A,, . 旲斗比之水而將上述化合物至少部分水解。通 式⑴所示之化合物與供電子性有機溶劑之溶液中通式 二丁之化口物之濃度係考慮於溶劑中之溶解性等而適當確 疋,例如適當的是2〜50質量%之範圍。 將!=之添加,可不將水與其他溶劑混合而進行,亦可 模水其他溶劑混合後而進行。水之添加亦 模,例如可歷時6〇秒〜10小時 反應規 之產率良好之觀點而言,較Ί订。就產物 通式⑴之有機鋅化合物中;的;^由在作為原料之上述 通式⑴所示之化合物& τ不對 (靜置之狀離~ 生有機溶劑之溶液進行攪拌 飞者—面攪拌一面實施。添加時 之/皿度可選擇_90〜15(rc 才 Ί之任意溫度。就水與有機鋅 I47876.doc •29· 201109279 合物之反應性的觀點而言,較好的是-15〜5t。 於水之添加後,為了進行水與通式⑴所示之化合物之 反應’例如残拌(靜置之狀態下)而放置ι分鐘,、時或 進行授拌。關於反應溫度,可於.15(rc間之任意溫度 y反應。。就以高產率獲得部分水解物之觀點而言,較好的 是5〜80°C。反應壓力並無限制。關於水與通式⑴所示之 化合物之反應的進行’視需要可對反應 藉由纖(一 核磁共=:(紅 外先。曰對樣品進行分析,或藉由對所產生之氣體進行 取樣而進行監控。 上述有機溶劑、作為原料之上述通式⑴之有機辞化人 物、以及水可根據所有慣用之方法導入,亦彳以與溶劑之 混合物的形式導入。該等之反應步驟可為批次操作式Υ半 批次操作式、連續操作式中任意一種,並無特別限制,較 理想的是批次操作式。 藉由上述反應,上述通式(1)之有機鋅化合物藉由水而 至少部分水解,而獲得包含部分水解物之產物。通式之 有機辞化合物為二乙基鋅時,對藉由與水之反應而得之產 物的分析自很早開始就一直進行,但結果因報告不同而不 同,並未明確確定產物之組成。又,產物之組成亦可因水 之添加莫耳比或反應時間等而變化。推測本發明中,產物 之主成刀係下述通式(2)所示之化合物中瓜不同之化入物的 1〜數種之混合物: (2) R^-Zn-CO-ZnJm-R1 147876.doc •30- 201109279 (式中R與通式⑴中之Rl相同,m為2~20之整數)。 、=應結束後,例如藉由㈣、濃縮、萃取、管柱層析等 、爷之方法%可將上述產物之__部分或全部加以回收及 純化。於反應產物中殘存作為原料之通式⑴之有機辞化合 物2亦可藉由上述方法進行回收,較好的是進行回收。 猎由上述方法自供電子性有機溶劑分離而回收之组合物 亦可溶解於與反應中所使用之供電子性有機溶劑不同的薄 ΟG heptyl. The compound represented by the formula (1) is preferably a compound wherein the carbon number of r1 is 2, V4, 5 or 6. The compound represented by the formula (1) is particularly preferably an ethyl group. The composition of the present invention comprises a partial hydrolyzate produced by the following method, that is, a solution of the compound represented by the formula (1) and an electron-donating organic solvent, and the above-mentioned molars are added. The above compound is at least partially hydrolyzed. The concentration of the chemical compound of the formula (1) and the solution of the compound of the formula (1) in the solution of the electron-donating organic solvent is appropriately determined in consideration of the solubility in the solvent, etc., for example, suitably 2 to 50% by mass. range. will! The addition of = can be carried out without mixing water with other solvents, or by mixing other solvents in the mold water. The addition of water can also be carried out, for example, from the viewpoint of a good yield of 6 sec to 10 hours. In the case of the organozinc compound of the formula (1); the compound & τ represented by the above formula (1) as a raw material is not used (stirring of the solution of the organic solvent in a standing state) It can be carried out on one side. When adding, the degree of dish can be selected from _90 to 15 (arc. Any temperature.) From the viewpoint of the reactivity of water with organozinc I47876.doc •29·201109279, it is preferable that - 15~5t. After the addition of water, in order to carry out the reaction between water and the compound represented by the formula (1), for example, in the case of residual mixing (in a state of standing), it is left for 1 minute, or when it is mixed. It can be reacted at any temperature ≤ between rc. From the viewpoint of obtaining a partial hydrolyzate in a high yield, it is preferably 5 to 80 ° C. The reaction pressure is not limited. Regarding water and the formula (1) The reaction of the illustrated compound can be carried out as needed by the reaction of the fiber (one nucleus magnetic resonance:: infrared spectroscopy, or by sampling the generated gas. The above organic solvent, An organic reincarnation person of the above formula (1) as a raw material, And the water can be introduced according to all conventional methods, and is also introduced as a mixture with a solvent. The reaction steps can be any one of a batch operation type, a semi-batch operation type, and a continuous operation type, and are not particularly limited. Preferably, the batch operation formula is obtained by the above reaction, wherein the organozinc compound of the above formula (1) is at least partially hydrolyzed by water to obtain a product comprising a partial hydrolyzate. In the case of ethyl zinc, the analysis of the product obtained by the reaction with water has been carried out since the beginning, but the results vary from report to report, and the composition of the product is not clearly determined. The addition of the water to the molar ratio, the reaction time, etc., is presumed to be a mixture of 1 to several of the compounds of the compound represented by the following formula (2) in the present invention: (2) R^-Zn-CO-ZnJm-R1 147876.doc •30- 201109279 (wherein R is the same as R1 in the general formula (1), m is an integer from 2 to 20). From (4), concentration, extraction, column chromatography, etc. % can be partially recovered or purified from the above-mentioned product. The organic compound 2 of the formula (1) remaining as a raw material in the reaction product can also be recovered by the above method, preferably by recovery. The composition recovered by the above method from the electron-donating organic solvent can also be dissolved in a thin layer different from the electron-donating organic solvent used in the reaction.

G 膜形成用有機溶劑而製成塗佈用溶液。又,亦可不對供電 子性有機溶劑進行分雜&脸G由, 將反應生成混合物直接或適當調 整;辰度而製成塗佈用溶液。 所谓與反應中所使用之供 电于性有機溶劑不同的薄膜形 ^有機溶劑,例如較好的是彿點為机以上之溶劑。其 ^在於:由於彿點相對較高,因此揮發性低,從而可避 、佈作業中溶劑蒸發而塗膜變得乾燥所致之作業性惡 化0 作為上述薄膜形成用右她、办令丨 有機洛知彳之例,可列舉:戊烷、己 二庚烷、辛燒、石油趟等脂肪族煙系溶劑,苯、甲苯、 甲本等方香族經系溶劑’二乙鱗、二異丙輕、乙 一醇二γ醚、二乙二 一 甲醚、二乙二醇二甲醚、二崎 烷 '四氫呋喃等醚系溶劑,= 脸笠盼么 —甲基胺、三乙基胺、三苯基 2 η專不僅可單獨使用,而且亦可將 上加以混合而使用。 ^ ^ ^ ^ ^ Α 右考慮到包含上述反應產物所 3之有機辞化合物之部分 有Hu 卩刀水解物的反應產物之溶解性、及 有機洛劑自身之揮發性 等則作為薄膜形成用有機溶劑, I47876.doc 201109279 較好的是1,4-二哼烷、甲基單乙二醇二曱醚、乙基單乙二 醇一甲喊'甲基二乙二醇二甲鰱。 氧化鋅薄膜形成用組合物之固形物成分濃度可任意選擇 1〜30質量%之範圍。濃度越高則能以越少之塗佈次數製造 薄膜’若考慮到包含有機辞化合物之部分水解物的反應產 物之溶解度、及透明氧化鋅薄膜之形成之容易度,則較好 的是3〜12質量%。 [氧化鋅薄膜之製造方法(第1態樣)]G film formation is performed with an organic solvent to prepare a coating solution. Further, it is also possible to form a coating solution by directly or appropriately adjusting the reaction mixture to the mixture of the power supply organic solvent without using the surface. The film-like organic solvent which is different from the organic solvent to be used in the reaction is, for example, preferably a solvent of the above. The reason is that since the Buddha's point is relatively high, the volatility is low, so that the solvent can be evaporated during the cloth operation, and the coating film becomes dry, which deteriorates the workability. Examples of Luozhizhi include aliphatic pentane solvents such as pentane, hexanehexane, octane, and petroleum hydrazine, and benzene, toluene, and aristocracy. Light, ethyl alcohol di- gamma ether, diethylene dimethyl ether, diethylene glycol dimethyl ether, diazane 'tetrahydrofuran and other ether solvents, = face look - methylamine, triethylamine, triphenyl The base 2 η can be used alone or in combination. ^ ^ ^ ^ ^ Α Right, considering the solubility of the reaction product of the Hu boring hydrolyzate in the portion containing the above-mentioned reaction product 3, and the volatility of the organic granule itself, as an organic solvent for film formation I47876.doc 201109279 Preferred is 1,4-dioxane, methyl monoethylene glycol dioxime ether, ethyl monoethylene glycol monomethyl ketone 'methyl diethylene glycol dimethyl hydrazine. The solid content concentration of the composition for forming a zinc oxide thin film can be arbitrarily selected in the range of 1 to 30% by mass. The higher the concentration, the smaller the number of times the coating can be produced. If the solubility of the reaction product containing the partial hydrolyzate of the organic compound and the ease of formation of the transparent zinc oxide film are considered, it is preferably 3~ 12% by mass. [Method for Producing Zinc Oxide Thin Film (First Aspect)]

本發明係關於氧化辞薄膜之製造方法。該製造方法包 括·將上述本發明之氧化鋅薄膜形成用組合物塗佈於基板 表面,繼而將所得之塗佈膜於3〇〇(>c以下之溫度下進行加 熱而形成氧化辞薄膜。 ,—,入土 /A ^ ^ /¾ . 貝粉恐 法喷墨法 '網版印刷法等慣用方法來實施。喷霧熱 系可Φ加熱基板_面進行塗佈之方法因此可在 之同時將溶劑乾燥,根攄 ^ 很據條件,亦存在無需塗佈後之 乾無;谷劑之加熱的情开>。&The present invention relates to a method of producing an oxidized film. This production method includes applying the composition for forming a zinc oxide thin film of the present invention to the surface of a substrate, and then heating the obtained coating film to a temperature of 3 Torr (>c or less to form an oxidized film. , -, in the soil / A ^ ^ / 3⁄4. Shell powder method of inkjet method 'screen printing method and other conventional methods to implement. Spray heat can Φ heating the substrate _ surface coating method can therefore be at the same time The solvent is dried, and the root 摅 is very conditional, and there is also no need to dry after coating; the heating of the granules is >&

&、 形進而,根據條件,亦存在除 燥以外,還至少部分推/_ 士 仃有機鋅化合物之部分水解物 化辞之反應的情形。因 m m ^ 1亦存在更容易進行後步驟 用特定溫度下之加熱 &S ^ φ 7成氧化鋅薄臈之情形。噴霧 解法中之基板之加埶溫 柳 細人榀於复4 又例如可為5〇〜250°C之範圍。 、且s物於基板表面 空氣環境下、含有大.^ 氮氣㈣性氣體環境, 置水蒸氣之相對 下、氧氣等氧化氣體環境下 u、、度^之工^ 風乳荨還原氣體環境下 147876.do< -32- 201109279 該等之混合氣體環境下等之任—環境下、且於大氣壓或加 壓下實施。本發明之組合物所含之產物會與環境中之水分 反應而緩慢分解’因此較好的是於不含水分之惰性氣體環 境下進行。再者,本發明之方法中之塗佈亦可於減壓下實 施,但於大氣壓下實施就裝置方面而言亦較簡便,故而較 好。 於基板表面塗佈塗佈液後,視需要將基板設定為特定溫And, depending on the conditions, there is also a case where, in addition to drying, at least part of the reaction of the partial hydrolyzate of the organozinc compound is pushed. Since m m ^ 1 is also easier to carry out the post-step heating with a specific temperature & S ^ φ 7 into a thin film of zinc oxide. The twisting temperature of the substrate in the spray solution is also in the range of 5 〇 to 250 ° C, for example. And s things in the air environment of the substrate surface, containing a large nitrogen gas (four) gas environment, the relative humidity of the water vapor, oxygen and other oxidizing gas environment u,, the degree of work ^ wind 荨 荨 reducing gas environment 147,876 .do<-32- 201109279 These are mixed gas environments, etc., under ambient conditions and at atmospheric pressure or under pressure. The product of the composition of the present invention reacts slowly with the moisture in the environment and is therefore preferably decomposed in an inert gas atmosphere free of moisture. Further, the coating in the method of the present invention can also be carried out under reduced pressure, but it is also simpler in terms of equipment at atmospheric pressure, and thus is preferable. After coating the coating liquid on the surface of the substrate, set the substrate to a specific temperature as needed.

度,亚將溶劑乾燥,然後於特定溫度下進行加熱,藉此而 形成氧化鋅薄膜。 將溶劑乾燥之溫度例如可為2G〜細。c之範圍,可根據共 存之有機溶劑的種類而適時設定。溶劑乾燥後之用以形: 乳化辞之加熱溫度例如為20〜扇。C之範圍,較好的是 50〜25〇C之範圍,更好的是10〇〜200。。之範圍。亦可使溶 劑乾燥溫度與其後用以形成氧化辞之加熱溫度相同,而同 時進行溶劑乾燥與氧化鋅形成。 =要’亦可進而藉由在氧氣等氧化氣體環境下、氯氣 =還原氣體環境下、氫、氬、氧等電㈣境下進行上述加 ;:促進氧化鋅形成、或提高結晶性。氧化鋅薄膜之膜 據本路日特職制,貫用上較好的是〇·05〜2㈣之範圍。根 次以卜月之製w方法,可藉由將上述塗佈(乾燥)加熱重複1 ^ 而適當製造上述範圍之膜厚的薄膜。 ::本發明之製造方法而形成之氧化辞薄膜較好的是對 且有85^有嶋以上之平均透射率者,更好的是對可見光 -^上之平均透射率。所謂「對可見光之平均透射 147876.doc -33· 201109279 率」’係以如下方式加以定義並進行測定。所謂對可見光 之平均透射率,係指380〜780 nm之範圍之光線的透射率之 平均,可藉由紫外可見分光光度計而測定。再者,對可見 光之平均透射率亦可藉由提示5 5〇 nm之可見光的透射率而 表現。由於對可見光之透射率會根據因喷塗時、或塗佈後 之加熱所致之氧化鋅的生成程度而變化(增大),因此較好 的是考慮使薄膜對可見光之透射率成為8〇%以上而設定噴 塗時、或塗佈後之加熱條件(溫度及時間)。 本發明之第1態樣中可用作基板的例如可為透明基材 膜,透明基材膜可為塑膠膜。形成塑膠膜之聚合物可例 示:聚酯(例如聚對苯二甲酸乙二酯(pET)、聚萘二甲酸乙 二酯(PEN)、聚(甲基)丙浠酸酯(例如聚曱基丙烯酸甲酯 (PMMA))、聚碳酸酯(PC)、聚苯乙烯、聚乙烯醇、聚氣乙 烯、聚偏二氯乙烯、聚乙烯、環狀聚烯烴(c〇p)、乙烯·乙 酸乙烯酯共聚物、聚胺基甲酸酯、三乙酸酯、賽璐凡。該 等之中,較好的是PET、PEN、Pc、PMMA。透明基材膜 根據聚合物之種類可為無延伸膜,亦可為延伸膜。例如, 1 Θθ膜例如PET膜通常為雙軸延伸膜,又,卩匚膜、=乙酉Λ 酯膜、賽璐凡膜等通常為無延伸膜。 [摻雜有3Β族元素之氧化鋅薄膜製造用組合物(第2態樣 本發明之摻雜有3職it素之氧化鋅薄膜製造用組合物包 含:⑴於將下述通式⑴所示之有機辞化合物、與下述通 式⑺或⑺所示之3B族元素化合物之至少丨種溶解於供電子 性有機溶劑而成之溶液82中’添加水而至少將上述有機辞 l47S76.doc -34- 201109279 化合物至少部分水解而獲得之產物(以下有時稱為部分水 解物1);或(ii)於將上述通式(1)所示之有機辞化合物溶解 於供電子性有機溶#丨而成之溶液巾,添加水而將上述有機 鋅化合物至少部分水解後,添加上述通式(2)或(3)所示之 3B族元素化合物之至少丨種而獲得的產物(以下有時稱為部 分水解物2): R^Zn-R1 ⑴ Ο 〇 (式中,R為碳數1〜7之直鏈或支鏈燒基)The solvent is dried and then heated at a specific temperature to form a zinc oxide film. The temperature at which the solvent is dried may be, for example, 2 G to fine. The range of c can be set as appropriate according to the type of organic solvent that is present. After the solvent is dried, it is used for the shape: the heating temperature of the emulsification is, for example, 20 to fan. The range of C is preferably in the range of 50 to 25 〇C, more preferably 10 〇 to 200. . The scope. It is also possible to make the solvent drying temperature the same as the heating temperature for forming the oxidized word, while performing solvent drying and zinc oxide formation. If necessary, the above addition may be carried out by using an oxidizing gas such as oxygen, a chlorine gas = a reducing gas atmosphere, hydrogen, argon, oxygen or the like (4): promoting zinc oxide formation or improving crystallinity. The film of zinc oxide film According to the special system of the road, it is better to use the range of 〇·05~2(4). The film of the film thickness in the above range can be suitably produced by repeating the above coating (drying) heating by 1 ^. The oxidized film formed by the production method of the present invention preferably has an average transmittance of more than 85 Å, more preferably an average transmittance of visible light. The "average transmission of visible light 147876.doc -33·201109279 rate" is defined and measured as follows. The average transmittance for visible light refers to the average transmittance of light in the range of 380 to 780 nm, which can be measured by an ultraviolet-visible spectrophotometer. Furthermore, the average transmittance of visible light can also be expressed by the transmittance of visible light of 5 5 〇 nm. Since the transmittance to visible light varies (increases) depending on the degree of formation of zinc oxide due to heating during spraying or after coating, it is preferable to make the transmittance of the film to visible light 8 〇. The heating conditions (temperature and time) at the time of spraying or after coating are set at % or more. In the first aspect of the present invention, for example, a substrate can be used as a transparent substrate film, and the transparent substrate film can be a plastic film. The polymer forming the plastic film can be exemplified by polyester (for example, polyethylene terephthalate (pET), polyethylene naphthalate (PEN), poly(methyl) propionate (for example, polydecyl). Methyl acrylate (PMMA), polycarbonate (PC), polystyrene, polyvinyl alcohol, polyethylene, polyvinylidene chloride, polyethylene, cyclic polyolefin (c〇p), ethylene vinyl acetate Ester copolymer, polyurethane, triacetate, celecoxime. Among them, PET, PEN, Pc, PMMA are preferred. The transparent substrate film may be non-extended depending on the type of polymer. The film may also be a stretched film. For example, a 1 Θ θ film such as a PET film is usually a biaxially stretched film, and a ruthenium film, a acetamidine film, a cellophane film or the like is usually a non-stretched film. (3) A composition for producing a zinc oxide thin film of a ternary element, wherein the composition for producing a zinc oxide thin film doped with a three-dimensional element of the second aspect of the invention includes: (1) an organic compound represented by the following formula (1), a solution 82 in which at least one of the compounds of the Group 3B element represented by the following formula (7) or (7) is dissolved in an electron-donating organic solvent a product obtained by at least partially hydrolyzing the above-mentioned organic compound l47S76.doc-34-201109279 (hereinafter sometimes referred to as partial hydrolyzate 1); or (ii) by using the above formula (1) The organic compound compound is dissolved in a solution towel made of an electron-donating organic solvent, and the organic zinc compound is at least partially hydrolyzed by adding water, and then the group 3B element represented by the above formula (2) or (3) is added. A product obtained by at least a compound of the compound (hereinafter sometimes referred to as a partial hydrolyzate 2): R^Zn-R1 (1) Ο 〇 (wherein, R is a linear or branched alkyl group having 1 to 7 carbon atoms)

McXd.aH20 ⑺ (弋中Μ為3 B知元素,X為卤素原子、确酸或硫酸,於X 為南素原子或硝酸時,(:為1、(1為3,於χ為硫酸時,£為 2、d為3 ' a為0〜9之整數) H2~M~R3 ' *(L) b ⑻ (式中,Μ為3B族元素,R2、R3、R4獨立為氫、碳數卜7之 直鏈或支鏈烷基、碳數丨〜7之直鏈或支鏈烷氧基、羧酸 基、或乙醯丙酮基,進而[為含有氮、氧、磷之任一種的 配位性有機化合物,b為〇〜9之整數)。 於部分水解物1之情形時,由於係在有機鋅化合物與3b 族兀素化合物之混合溶液中添加水,因此上述產物通常包 含上述3B族元素化合物之水解物。3B族元素化合物之水 解物取決於水之添加量等,可為部分水解物。又,於部分 水解物2之情形時,係於有機鋅化合物中添加水後添加3B 族元素化合物,因此其取決於水之添加量等,而於所添加 147876.doc •35- 201109279 之水被有機辞化合物之水解消耗後添加3B族元素化合物 情形時,上述產物通常不含上述3B族元辛# ^ 之 力兀常化合物之水解 物。3B族元素化合物亦存在以下可能 ^ 不進行水解而以 原料之狀態含有’或者成為3B族元辛 I化合物之有機基(配 位子)與有機鋅化合物之部分水解物所具有之有機基進疒 交換(配位子交換)而成者。 土 仃 關於上述水之添加量’於部分水解^之情形時,係將 其相對於上述有機鋅化合物與化族元素化合物之合計量的 莫耳比設為。.4〜。.9之範圍。又,於部分水解物;二二; 時,上述水之添加量係將其相對於上述有機辞化合物 耳比設為0.4〜0.9之範圍。 、 較好的是將水相對於有機辞化合物與有機3β族元素化人 物之合計量、或有機鋅化合物的添加莫耳比限定在“二 之範圍。藉由使莫耳比為0.4以上,而可以原料中所含之 鋅為基準以90%以上之高產率獲得包含將有機辞化合物部 分水解而成之產物的有機鋅組合物。又,於部分水解… 之情形時’ 3 B族元素化人物介、奋θ a I化口物亦適置部分水解。藉由使莫耳 比為0.4以上’於部分水解物 E 解物1之晴形時,可抑制未反應之 原料即有機鋅化合物盘故 物/、3B私兀素化合物之殘存量,於部分 水解物2之情形時,可永备丨古 有機鋅化合物之殘存量,其结 果可獲得可安全操作具、、 《有機鋅組合物。又,藉由使莫耳比 為0.9以下,而可拍j告,丨士 l 抑制水解反應中產生凝膠。若於水解反 應中產生凝膠,則存在溶 黏度上升’而其後之操作變困 難之情形。水之添加莫耳 斗比較好的是〇.6〜0.8之範圍,更好 147876.doc -36- 201109279 的是0.6〜0.75之範圍。 么、電子f生有機溶劑只要為對通式⑴所示之有機辞化合 :、通式⑺或⑺所^3B族元素化合物及水具有溶解性 即可’作為例子,可列舉:二乙醚、二正丙醚、二異丙 峻:二丁ϋ、四氫吱鳴、二号烧、乙二醇二甲轉、二乙二 醇一甲醚、二乙二醇二甲謎等鍵系溶劑,三甲基胺、三乙 基胺、三苯基胺等胺系溶劑等。作為具有供電子性之溶 劑,較好的是四氫咬喊、二ρ号炫。 Ο Ο 上述通式(1)所示之有機鋅化合物與上述本發明之第工熊 樣中所說明者相同。 μ 作為上述通式(2)所示之3職元素化合物中⑽所表示之 金屬之具體例’可列舉B' .Ga、In。又作衫所表 示之鹽之具體例,可列舉說、氯、溴、碘、硝酸、硫酸、 鱗酸。通式(2)所示之3B族元素化合物特別是可列舉:氯 化硼、氯化鋁六水合物、硝酸鋁九水合物、氯化鎵、硝酸 鎵水合物、氯化銦四水合物、硝酸銦五水合物。 上述通式(3)所示之3B族元素化合物中的M所表示之金屬 之具體例,可列舉B、A卜Ga、In。又,R2、Rs、及尺4較 好的是氫。或者R2、R3、及尺4亦較好的是烷 之具體例’可列舉:甲基、乙基、丙基、異丙基 異丁基、第二丁基、第三丁基、戊基、異戊基、新戊基、 第三戊基、己基、異己基、第二己基、第三己基、2_己 基、及庚基。亦較好的是R2、R3、及尺4之至少為氫, 其餘為烧基。作為L所表示之配位子,可列舉:二甲美 147876.doc -37- 201109279 胺、三乙基胺、三苯基胺、η比咬、咪琳、N,N_二甲基笨 胺、N,N-二乙基苯胺、三苯基膦、二曱基硫、二乙醚、四 虱吱喃。通式(3)所示之3B族元素化合物特別是可列舉: 二棚烧、棚烧-四氫咬喃錯合物、硼烧_三甲基胺錯合物、 爛烧-三乙基胺錯合物、三乙基硼烷、三丁基硼烷、氫化 紹-三甲基胺錯合物、氫化鋁-三乙基胺錯合物、三甲基 鋁、氫化二甲基鋁、三異丁基鋁、氫化二異丁基鋁、三甲 基鎵、三乙基鎵、三甲基銦、三乙基銦。就價格便宜且容 易獲得之方面而言,特別好的是三乙基鋁、三異丁基鋁、 三甲基鎵、三甲基銦。 於本發明之組合物中,添加上述通式(1)所示之有機辞 化合物、與上述通式(2)或所示之3B族元素化合物,以 使上述通式⑺或(3)所k3B族元素化合物相對於有機辞 化合物之莫耳比為〇.005〜〇 3之比例。若3B族元素化合物 之添加量過多,則存在其作為雜質使膜特性劣化之傾向, 因此較好的是之比例。其t於部分水解物i之情 /夺於以上述莫耳比含有有機辞化合物與扣族&素化合 物之溶液巾添加水而獲得部分水解物。又,於部分水㈣ ^情形時,於含有有機鋅化合物之溶液中添加水而獲得 P刀水解物,並且以上述莫耳比添加扣族元素化合物。 :上述通式⑴所示之化合物與上述通式⑺或(3)所示之 中、^化合物溶解於上述供電子性有機溶劑而成之溶液 3B族元^式⑴所示之化合物與上述通式(2)或(3)所示之 族-素化合物之合計量的濃度係考慮於溶 147876.doc -38· 201109279 等〜決定’例如適當的是。㈣質 於將上述通式⑴之有機鋅化合物至少圍。 加上述通式⑺或⑺之3B7t素化合物之情^水解後,添 所示之化合物溶解於上述供電子性有機:= 液中,上诚诵?1、π - W而成之溶 、、-解㈣ 不之化合物之濃度係考慮於溶劑中之 圍。 適田的疋0.1〜50質量%之範 關於水之添加,可不將^这 Ο 〇 J不將水與其他溶劑混合 :水與其他溶劑混合後而進行。水之添加亦取決:反:: 模,例如可歷時60秒〜10小時之間之時間來進行。、就^ 之產率良好之觀點而言,較好 、“⑴士, 季乂好的疋猎由在作為原料的上述 、式()之有機辞化合物中滴加水而添加。水之添加可不對 與供電子性有機溶劑之溶液進㈣拌 Λ )實施,或者一面授拌-面實施。添加時 =皿又可選擇.Hot間之任意溫度。就水與有機辞化 &物之反應性的觀點而言,較好的是_丨5〜3〇亡。 於水之添加後,為了進行水與通式⑴所示之化合物以 及通式⑺或(3)所示之化合物、或水與通式⑴所示之化八 物之反應,例如不攪拌(靜置之狀態下)而放置i分鐘〜48 = 時或進行攪拌。關於反應溫度,可於_9〇〜15〇^間之任意 溫度下反應。就以高產率獲得部分水解物之觀點而言,較 好的是5〜80°C。反應壓力並無限制。通常可於常壓(大氣 壓)下實施。關於水與通式(1)所示之化合物之反應之= 行,視需要可對反應混合物進行取樣,藉*NMl^iiR等對 147876.doc •39· 201109279 樣品進行分析 控。 或藉由對所產生之氣體進行取樣而進行監 上述有機溶劑、作氧语立叶 ^ 作4原枓之上《式⑴之有機鋅化人 物、以及水可根據所有慣 σ ,力I員用之方法導入至反應容器中, 可以與溶劑之混合物的彡 耶 ㈣式¥人。該等之反應步驟可為批 久操作式、半批次择作+ 'φ ΛΛ, ,σ . 人徕作式、連續操作式中任意一種, 特別限制,較理想的是批次操作式。 並… 藉由上述反應,上述通式⑴之有機鋅化合物與上述通 式(2)或(3)之3Β族元素化a铷 江通 化人物Ιέά > ° 或者上述通式(1)之有機鋅 化&物精由水而至少部分水解,而獲得包含部分水解物之 產物。通式⑴之有機辞化合物為二乙基辞時,對藉由與水 之反應而得之產物的分析自很早開始就—直進行,但結 因報告不同而不同,並未明.破 木吶確確疋產物之組成。又,產物 之組成亦可因水之添加莫耳比或反應時間等而變化。於本 發明中1於部分水解物卜產物之主成分係下述通式⑷ 及(5)所不之結構單元與下述通式⑹所示之結構單元組合 而成之化合物'或叫同的複數種化合物之混合物: 、 (4) (5) m為2〜20之整數) (6) -[0-Zn]m- (式中’R與通式(1)中之ri相同 -[Ο-Μ]-McXd.aH20 (7) (弋中Μ is 3 B known element, X is a halogen atom, acid or sulfuric acid, when X is a south atom or nitric acid, (: is 1, (1 is 3, when χ is sulfuric acid, £ is 2, d is 3 ' a is an integer from 0 to 9) H2~M~R3 ' *(L) b (8) (wherein, Μ is a 3B group element, and R2, R3, and R4 are independently hydrogen and carbon number a linear or branched alkyl group of 7 or a linear or branched alkoxy group having a carbon number of 丨7, a carboxylic acid group, or an acetoacetone group, and further [coordination containing any one of nitrogen, oxygen, and phosphorus The organic compound, b is an integer of 〇~9.) In the case of the partial hydrolyzate 1, since the water is added to the mixed solution of the organozinc compound and the 3b-based halogen compound, the above product usually contains the above-mentioned Group 3B element. a hydrolyzate of the compound. The hydrolyzate of the compound of the 3B group element may be a partial hydrolyzate depending on the amount of addition of water, etc. Further, in the case of the partial hydrolyzate 2, a 3B group element is added after adding water to the organozinc compound. a compound, so it depends on the amount of water added, etc., and the water added by 147876.doc •35- 201109279 is hydrolyzed by the organic compound In the case where a compound of a 3B group element is added later, the above product usually does not contain the hydrolyzate of the above-mentioned 3B group octyl compound. The 3B group element compound may also have the following possibility: without the hydrolysis, it may be contained in the state of the raw material. The organic group (coordination) of the 3B group octyl I compound and the organic hydrazine exchange (coordination exchange) of the partial hydrolyzate of the organozinc compound. In the case of partial hydrolysis, the molar ratio of the above-mentioned organic zinc compound to the compound of the compound is set to be in the range of .4 to .9. Further, in the partial hydrolyzate; When the amount of the water added is in the range of 0.4 to 0.9 with respect to the organic compound compound, it is preferred to combine the water with respect to the organic compound and the organic 3β group element. Or the molar ratio of the addition of the organozinc compound is limited to "the range of two. By setting the molar ratio to 0.4 or more, the zinc contained in the raw material can be obtained in a high yield of 90% or more based on the zinc contained in the raw material. The organic zinc composition of the product obtained by partial hydrolysis of the compound. Further, in the case of partial hydrolysis, the '3 B group elemental character, the θθ a I mouth is also partially hydrolyzed. When the ratio is 0.4 or more, when the partial hydrolyzate E is dissolved in a clear form, the residual amount of the unreacted raw material, that is, the organic zinc compound, and the 3B private compound can be suppressed, and in the case of the partial hydrolyzate 2 The residual amount of the organic zinc compound can be permanently preserved, and as a result, a safely operable tool, an "organic zinc composition" can be obtained. Further, by making the molar ratio 0.9 or less, it is possible to shoot a report, and the gentleman l The gel is inhibited in the hydrolysis reaction. If a gel is produced in the hydrolysis reaction, there is a case where the solubility rises and the subsequent operation becomes difficult. The addition of water to the molars is better in the range of 〇.6~0.8, and better 147876.doc -36- 201109279 is the range of 0.6~0.75. The organic solvent is an organic compound represented by the formula (1): a compound of the formula (7) or (7), a compound of the group 3B and water, and is exemplified by diethyl ether and N-propyl ether, diisopropyl sulphate: dibutyl hydrazine, tetrahydro hydrazine, second burning, ethylene glycol dimethyl diene, diethylene glycol monomethyl ether, diethylene glycol dimethyl mystery and other key solvent, three An amine solvent such as methylamine, triethylamine or triphenylamine. As the solvent having electron donating property, tetrahydrogenated biting and two punctures are preferred.有机 有机 The organozinc compound represented by the above formula (1) is the same as those described in the above-mentioned work-bearing bear of the present invention. μ As a specific example of the metal represented by (10) in the compound of the third element represented by the above formula (2), B'.Ga, In can be mentioned. Specific examples of the salt represented by the shirt include chlorine, bromine, iodine, nitric acid, sulfuric acid, and scaly acid. Specific examples of the Group 3B element compound represented by the formula (2) include boron chloride, aluminum chloride hexahydrate, aluminum nitrate nonahydrate, gallium chloride, gallium nitrate hydrate, and indium chloride tetrahydrate. Indium nitrate pentahydrate. Specific examples of the metal represented by M in the group 3B element compound represented by the above formula (3) include B, A, Ga, and In. Further, R2, Rs, and Rule 4 are preferably hydrogen. Or R2, R3, and the ruler 4 are also preferably a specific example of the alkane, which may be exemplified by methyl, ethyl, propyl, isopropylisobutyl, t-butyl, tert-butyl, pentyl, Isoamyl, neopentyl, third amyl, hexyl, isohexyl, second hexyl, third hexyl, 2-hexyl, and heptyl. It is also preferred that at least R 2 , R 3 , and 4 are hydrogen, and the rest are alkyl. As a ligand represented by L, there can be mentioned: dimethyl 147876.doc -37- 201109279 amine, triethylamine, triphenylamine, η than bite, imiline, N, N-dimethylamine , N,N-diethylaniline, triphenylphosphine, dimercaptosulfur, diethyl ether, tetrafuran. The compound of the Group 3B element represented by the formula (3) is particularly exemplified by: a sinter, a sinter-tetrahydrocarbamate complex, a borax-trimethylamine complex, and a roast-triethylamine. Complex, triethylborane, tributylborane, hydrogenated-trimethylamine complex, aluminum hydride-triethylamine complex, trimethylaluminum, hydrogenated dimethylaluminum, three Isobutyl aluminum, diisobutyl aluminum hydride, trimethyl gallium, triethyl gallium, trimethyl indium, triethyl indium. Particularly preferred in terms of being inexpensive and readily available are triethyl aluminum, triisobutyl aluminum, trimethyl gallium, and trimethyl indium. In the composition of the present invention, the organic compound represented by the above formula (1) and the compound of the above formula (2) or the group 3B are added to the k3B of the above formula (7) or (3). The molar ratio of the group element compound to the organic compound is 〇.005~〇3. When the amount of the Group 3B element compound added is too large, the film properties tend to be deteriorated as an impurity, and therefore the ratio is preferably a ratio. The partial hydrolyzate is obtained by adding water to the solution containing the organic compound and the cyclamate compound. Further, in the case of a part of water (4), water is added to a solution containing an organozinc compound to obtain a P-knife hydrolyzate, and a decarbamate compound is added in the above molar ratio. a compound represented by the above formula (1) and a compound represented by the above formula (7) or (3) in which the compound is dissolved in the electron-donating organic solvent, and the compound represented by the formula 3B is represented by the formula (1) The total concentration of the group-primary compounds represented by the formula (2) or (3) is determined by the dissolution of 147876.doc-38·201109279, etc., as appropriate. (4) The composition is at least surrounded by the organozinc compound of the above formula (1). After the hydrolysis of the 3B7t compound of the above formula (7) or (7) is carried out, the compound shown is dissolved in the above-mentioned electron-donating organic: = liquid, and sincerely? 1. π - W is dissolved, and - solution (4) The concentration of the compound is not considered in the solvent.适 0.1 50 0.1 to 50% by mass of the 关于 About the addition of water, can not ^ This Ο 〇 J does not mix water with other solvents: water and other solvents mixed. The addition of water also depends on: the inverse:: mode, for example, can take between 60 seconds and 10 hours. In view of the fact that the yield of the product is good, it is preferable that "(1), a good squid is added by adding water to the organic compound of the above formula () as a raw material. The addition of water may be incorrect. It is carried out with a solution of an electron-donating organic solvent (four), or it can be carried out while mixing. When adding, the dish can be selected at any temperature between .Hot. The reactivity of water with organic chemistry & In view of the above, it is preferred that _丨5~3 is dying. After the addition of water, in order to carry out water and the compound represented by the formula (1) and the compound represented by the formula (7) or (3), or water and The reaction of the chemical substance represented by the formula (1), for example, is left without stirring (in a state of standing) for i minutes to 48 = or stirring. The reaction temperature may be any temperature between _9 〇 and 15 〇. The reaction is preferably from 5 to 80 ° C in terms of obtaining a partial hydrolyzate in a high yield. The reaction pressure is not limited. It can be usually carried out under normal pressure (atmospheric pressure). About water and formula (1) The reaction of the indicated compound = row, the reaction mixture can be sampled if necessary, by *N Ml^iiR et al. 147876.doc •39· 201109279 samples were analyzed and controlled. Or by sampling the generated gas, the organic solvent was supervised, and the oxygen was used to make the above formula (1). The organic zincified person and the water can be introduced into the reaction vessel according to all the conventional sigma and the method used by the force member, and the mixture of the solvent and the solvent can be used as a batch operation method. The semi-batch is selected as + 'φ ΛΛ, , σ . Any one of the man-made and continuous operation modes, and is particularly limited, and is preferably a batch operation type. And... By the above reaction, the organic compound of the above formula (1) The zinc compound and the steroidal element of the above formula (2) or (3) a 铷 通 通 通 Ιέά 或者 或者 或者 或者 或者 或 或 或 或 或 或 或 或 或 或 或 或 或 或 或 或 或 或 或 或 或 或Obtaining a product containing a partial hydrolyzate. When the organic compound of the formula (1) is a diethyl group, the analysis of the product obtained by the reaction with water starts from a very early stage, but the cause report is different. Different, not clear. The group of broken hibiscus products Further, the composition of the product may also vary depending on the molar ratio of water added to the molar ratio, the reaction time, etc. In the present invention, the main component of the partially hydrolyzed product is the following general formulae (4) and (5). A mixture of a structural unit and a structural unit represented by the following formula (6): or a mixture of a plurality of compounds: (4) (5) m is an integer of 2 to 20) (6) - [0 -Zn]m- (wherein 'R is the same as ri in the general formula (1) - [Ο-Μ]-

II

QQ

(式中, 之X、R M與通式(2)或(3)中之μ相 、R3、R4之任一個相同, 同’ Q與通式(2)或(3)中 m為2〜20之整數)。 147876.doc -40- 201109279 關於部分水解物2,推測產物之主成分為下述通式(8)所 示之化合物、或m不同的複數種化合物之混合物。 R1-Zn-[〇-Zn]p-R,(8) (式中,R1與通式(1)中之Ri相同,卩為2〜2〇之整數)。 於上述有機鋅化合物水解時不共存上述3B族元素化合物 之h瓜時,於反應結束後,添加上述通式(2)或(3)之3B族 化合物,藉此而製造組合物。上述3B族元素化合物之添加 量相對於上述有機辞化合物之投入量為〇〇〇5〜〇 3。就可確 〇 冑地獲得3B族元素化合物之添加效果之觀點而言,以及若 添加量變多則存在其作為雜質而使膜特性劣化之傾向故 特別好的是0.005〜0.1。 水解反應結束後,例如藉由過濾、濃縮、萃取、管柱層 析等通常之方法,而可將上述產物之一部分或全部加以回 收及純化。又,於水解反應結束後添加38族元素化合物之 情形時,可藉由過濾將上述產物之一部分或全部加以回收 Q 及純化。於反應產物中殘存作為原料的通式(1)之有機鋅化 合物時,亦可藉由上述方法進行回收,較好的是進行回 收。藉由該等方法將殘存之原料回收後的反應產物較好的 是不含通式(1)所示之有機鋅化合物者,例如較好的是通式 (1)所示之有機辞化合物之含量為〇 5質量%以下。本發明 之組合物於製成塗佈液使用時,就形成均勻之膜的觀點而 吕,較好的是不含未反應而殘存之通式(1)所示之有機鋅化 合物者。 藉由上述方法自供電子性有機溶劑分離而回收之組合物 147876.doc -41 - 201109279 亦可/合解於與反應中所 膜形成用右攄w 《供電子性有機溶劑不同的薄 料成用有機溶㈣製成塗佈用溶液。又 子性有機溶劑進行分離 ’、不對供電 ^ ^ •反應生成混合物直接或適 整濃度而製成塗佈用溶液。 ㉟飞週田調 所謂與反應中所佶 成用有機a#丨 之仪藏子性有機溶劑不同的薄獏形 成用有機洛劑,例如較好 眉 弗^為85 c以上之溶劑。其 原因在於:由於沸點相丄 、 印點相對較向,因此揮 免塗佈作業中溶劍γ欢、 评知注低從而可避 化。 、 4而塗膜變得乾燥所致之作業性惡 作為上述薄膜形成用有 ’機,合劑之例,可列舉·· 、 ’:二庚烷、辛烷、石油越等脂肪族烴系溶劑,苯、甲苯、 :^二甲苯等芳香族煙系溶劑,二乙驗、二異丙趟、乙 —甲醚、二乙二醇二甲醚、三乙二醇二甲醚、二啰 坑、四氫呋喃等醚系溶劑,二 __ _ ^ τ基胺、二乙基胺、三苯基 胺·#胺系溶劑等。又,社μ 寻不僅可單獨使用,而且亦可將 2種以上加以混合而佶田 ^ . 人今士 使用。右考慮到包含上述反應產物所 二機鋅化合物之部分水解物的反應產物之溶解性、及 機岭^自身之揮發性等’則作為薄膜形成用有機溶劑, 又好的是μ·二号院、甲基單乙m乙基單乙二 醇二甲醚、▼基二乙二醇二曱醚。 乳^辞薄膜形成用組合物之固形物成分濃度可任意選擇 * *貝量/〇之範圍。遭度越高則能以越少之塗佈次數製造 薄膜右考慮到包含有機鋅化合物之部分水解物的反應產 物之溶解度、透明氧化鋅薄膜之形成之容易度,則較㈣ 147876.doc •42- 201109279 是3〜12質量%。 [氧化鋅薄膜之製造方法(第2態樣乃 本發明係關於氧化鋅薄媒之製造方法。該製造方法包 括:將上述本發明之氧化鋅薄膜形成用組合物塗佈於基板 表面,繼而將所得之塗佈膜於3〇(rc以下之溫度下進行加 熱而形成氧化鋅薄膜。 Ο 〇 於基板表面之塗佈可藉由浸塗法、旋塗法、喷霧熱分解 法、喷墨法、網版印刷法等慣用方法來實施。喷霧熱分解 法係可-面加熱基板-面進行塗佈之方法,因此,可在塗 佈之同時將溶劑乾燥,根據條件,亦存在無需塗佈後之用 以乾燥溶劑之加熱的情形H根據條件,亦存在除了 乾燥以外,還至少部分進行有機鋅化合物之部分水解物向 氧化辞之反應的情形。因此’亦存在更容易進行後步驟即 利用特定溫度下之加熱而形成氧化鋅薄膜之情形。喷霧熱 分解法中之基板之加熱溫度例如可為5〇〜25(rc之範圍。 組合物於基板表面之塗佈可於氮氣等惰性氣體環境下、 空氣環境下、含有大量水蒸氣之相對濕度較高之空氣環境 下、氧氣等氧化氣體環境下、氫氣等還原氣體環境下、或 該等之混合氣體環境下等之任一環境下、且於大氣壓或加 壓下實施。本發明之組合物所含之產物會與環境中之水分 反應而缓慢分解,因此較好的是於不含水分之惰性氣體環 境下進行。再者,本發明之方法中之塗佈亦可於減壓下實 施,但於大氣壓下實施就裝置方面而言亦較簡便,故而較 好。 147876.doc •43- 201109279 、板表面塗佈塗佈液後,視需要將基板設定為特定溫 &並將洛劑乾燥,然後於特定溫度下進行加熱,藉此而 形成氧化辞薄臈。 將’谷劑乾燥之溫度例如可為2〇〜2〇〇。。之範圍,可根據共 有機岭A的種類而適時設定。溶劑乾燥後之用以形成 氧化鋅之加熱溫度例如為20〜贿之範圍,較好的是 〇 250 C之乾圍,更好的是100〜200°C之範圍。亦可使溶 劑乾燥溫度與其後用以形成氧化鋅之加熱溫度相同,而同 時進行溶劑乾燥與氧化鋅形成。 ★視需要,亦可進而藉由在氧氣等氧化氣體環境下、氫氣 等還原體% k下、氫、氬、氧等電㈣境下進行上述加 熱:而促進氧化鋅形成、或提高結晶性。氧化鋅薄膜之膜 厚並無特別限制’實用上較好的是G.G5〜2叫之範圍。根 :本發明之製造方法,可藉由將上述塗佈(乾燥)加熱重複丨 人以上,而適當製造上述範圍之膜厚的薄膜。 藉由本發明之製造方法而形成之氧化鋅薄膜較好的是對 可見光具有80%以上之平均透射率者,更好的是對可見光 二有85%以上之平均透射率。所謂「對可見光之平均透射 率」’係以如下方式加以定義並進行測定。所謂對可見光 之平均透射率’係、指38〇〜 nm之範圍之光線的透射率之 平均’可藉由紫外▼見分光光度計而測定。#者對可見 光之平均透射率亦可藉由提示55G 之可見光的透射率而 表現由於對可見光之透射率會根據因喷塗時、或塗佈後 之加熱所致之氧化鋅的生成程度而變化(增大),因此較好 J47876.doc -44 - 201109279 的是考慮使薄膜對可見光之透射率成為8〇%以上而設定噴 塗時、或塗佈後之加熱條件(溫度及時間)。 進而,藉由本發明之製造方法而形成之氧化辞薄膜係摻 雜有3B族元素者,因此藉由進一步研究成膜方法,而使獲 得低電阻膜之可能性變高。 本發明之第2態樣中可用作基板的係與本發明之第丨態樣 中所例示之基板相同。 [氧化辞薄膜製造用組合物(第3態樣 本發明之第3態樣之氧化鋅薄膜製造用組合物包含以下3 個態樣: ⑴於將上述通式(1)所示之有機辞化合物溶解於供電子性 有機溶劑而成之溶液S1中’添加水而將上述有機辞化合物 至少部分水解而獲得之產物(以下有時稱為部分水解物U ; (ii) 於將上述通式(1)所示之有機辞化合物溶解於供電子性 有機溶劑而成之溶液81中,添加水而將上述有機鋅化合物 至少部分水解後,添加上述通式(2)或(3)所示之3b族元素 化合物的至少丨種而獲得之產物(以下有時稱為部分水解物 2); (iii) 於將下述通式(1)所示之有機辞化合物、與下述通式 或(3)所示之3B族元素化合物的至少!種溶解於供電子性有 機溶劑而成之溶液S2中,添加水而至少將上述有機鋅化人 物至少部分水解而獲得之產物(以下有時稱為部分水解^ 3 ), Ο) W-Zn-R1 147876.doc •45- 201109279 (式中,R1為碳數1〜7之直鏈或支鏈烷基) ¢2) CD b (式中’ Μ為3B族元素,r2、R3、R4獨立為氫、碳數卜7之 直鏈或支鏈烷基、碳數1〜7之直鏈或支鏈烷氧基、羧酸 基、或乙醯丙酮基,進而L為含有氮、氧、磷之任一種的 配位性有機化合物,b為〇〜9之整數)(wherein X, RM are the same as any of the μ phase, R3, and R4 in the formula (2) or (3), and the same as in the Q and the formula (2) or (3), m is 2 to 20 The integer). 147876.doc -40- 201109279 With respect to the partial hydrolyzate 2, it is presumed that the main component of the product is a mixture of a compound represented by the following formula (8) or a plurality of compounds different in m. R1-Zn-[〇-Zn]p-R, (8) (wherein R1 is the same as Ri in the formula (1), and 卩 is an integer of 2 to 2 Å). When the above-mentioned organometallic compound is hydrolyzed, the above-mentioned Group 3B element compound does not coexist, and after the completion of the reaction, the compound of Group 3B of the above formula (2) or (3) is added to thereby produce a composition. The amount of the above-mentioned Group 3B element compound to be added is 〇〇〇5 to 〇3 with respect to the above-mentioned organic compound. In view of the fact that the addition effect of the compound of the 3B group element is obtained in abundance, and the amount of addition is large, the film property tends to deteriorate as an impurity, and it is particularly preferably 0.005 to 0.1. After completion of the hydrolysis reaction, part or all of the above product may be recovered and purified by a usual method such as filtration, concentration, extraction, column chromatography or the like. Further, when a group 38 element compound is added after completion of the hydrolysis reaction, part or all of the above product may be recovered by filtration and purified by filtration. When the organozinc compound of the formula (1) as a raw material remains in the reaction product, it can be recovered by the above method, and it is preferred to carry out the recovery. The reaction product obtained by recovering the remaining raw material by these methods is preferably one which does not contain the organozinc compound represented by the formula (1), and is preferably, for example, an organic compound represented by the formula (1). The content is 〇5% by mass or less. When the composition of the present invention is used as a coating liquid, a uniform film is formed, and it is preferred that the composition is not contained in the organozinc compound represented by the formula (1) which remains unreacted. The composition recovered by the above method from the separation of the electron-donating organic solvent 147876.doc -41 - 201109279 can also be combined with the right-handed w for forming a film in the reaction, "a thin material different from the electron-donating organic solvent" The organic solution (4) is made into a coating solution. Further, the organic solvent is separated, and the mixture is not directly supplied to the reaction mixture to form a coating solution directly or at a suitable concentration. 35 Fei Zhoutian adjustment The so-called organic organic solvent which is different from the organic solvent used in the reaction is a solvent for the formation of an organic binder, for example, a good eyebrow is 85 c or more. The reason is that since the boiling point is opposite to each other and the printing dots are relatively oriented, the squeezing of the squeezing sword in the coating operation can be avoided, and the evaluation can be avoided. (4) The work-like dysfunction caused by the drying of the coating film is an example of a mixture of the above-mentioned film formations, and examples thereof include: -: an aliphatic hydrocarbon solvent such as diheptane, octane or petroleum. Aromatic flue-curing solvents such as benzene, toluene, and xylene, diacetyl, diisopropyl hydrazine, ethyl methyl ether, diethylene glycol dimethyl ether, triethylene glycol dimethyl ether, diterpene pit, tetrahydrofuran An ether solvent, bis-_^^-t-amine, diethylamine, triphenylamine, #amine-based solvent, and the like. In addition, the company can be used alone or in combination with two or more types. On the right, considering the solubility of the reaction product containing the partial hydrolyzate of the zinc compound of the above reaction product, and the volatility of the machine itself, it is used as an organic solvent for film formation, and it is also good that , methyl monoethyl m ethyl monoethylene glycol dimethyl ether, ▼ diethylene glycol dioxime ether. The concentration of the solid content of the composition for forming a film of the emulsion can be arbitrarily selected. * * The range of the amount of bar/〇. The higher the degree of the coating, the smaller the number of times the coating can be made. The solubility of the reaction product containing the partial hydrolyzate of the organozinc compound and the ease of formation of the transparent zinc oxide film are compared with (4) 147876.doc • 42 - 201109279 is 3 to 12% by mass. [Method for Producing Zinc Oxide Thin Film (Second Aspect) The present invention relates to a method for producing a zinc oxide thin film. The production method comprises applying the composition for forming a zinc oxide thin film of the present invention to a surface of a substrate, and then The obtained coating film is heated at a temperature of rc or less to form a zinc oxide film. The coating on the surface of the substrate can be applied by dip coating, spin coating, spray pyrolysis, or ink jet method. It is carried out by a conventional method such as a screen printing method. The spray pyrolysis method is a method in which the substrate-surface is coated by a surface-heating method. Therefore, the solvent can be dried while being applied, and there is no need to apply depending on the conditions. In the case of heating for drying the solvent in the following, depending on the conditions, in addition to drying, at least part of the reaction of the partial hydrolyzate of the organozinc compound to the oxidation is carried out. Therefore, it is easier to use the latter step. A case where a zinc oxide film is formed by heating at a specific temperature. The heating temperature of the substrate in the spray pyrolysis method may be, for example, in the range of 5 Å to 25 (rc). The composition is coated on the surface of the substrate. It can be used in an inert gas atmosphere such as nitrogen, in an air environment, in an air environment containing a relatively large amount of water vapor, in an oxidizing gas atmosphere such as oxygen, in a reducing gas atmosphere such as hydrogen, or in a mixed gas atmosphere. In any of the environments, and under atmospheric pressure or under pressure, the product contained in the composition of the present invention reacts slowly with water in the environment to decompose slowly, and therefore is preferably carried out in an inert gas atmosphere containing no moisture. Furthermore, the coating in the method of the present invention can also be carried out under reduced pressure, but it is also simpler in terms of equipment at atmospheric pressure, so it is preferable. 147876.doc •43- 201109279, plate surface coating After the coating liquid, the substrate is set to a specific temperature & and the agent is dried, and then heated at a specific temperature, thereby forming an oxidized thin sputum. The temperature at which the granule is dried may be, for example, 2 〇. The range of ~2 〇〇 can be set according to the type of the common organic ridge A. The heating temperature for forming zinc oxide after the solvent is dried is, for example, a range of 20 to bribe, preferably 〇 The dry circumference of 250 C is more preferably in the range of 100 to 200 ° C. The drying temperature of the solvent may be the same as the heating temperature for forming zinc oxide, and the solvent drying and zinc oxide formation are simultaneously performed. Further, the heating may be carried out in an oxidizing gas atmosphere such as oxygen, a reducing body % under hydrogen or the like, hydrogen, argon, oxygen or the like (4) to promote the formation of zinc oxide or to improve crystallinity. The thickness of the film is not particularly limited. It is preferably a range in which G.G5 to 2 is practically used. Root: The production method of the present invention can be suitably produced by heating the above coating (drying) repeatedly or more. A film having a film thickness of a range. The zinc oxide film formed by the production method of the present invention preferably has an average transmittance of 80% or more for visible light, and more preferably 85% or more for visible light. . The "average transmittance to visible light" is defined and measured as follows. The average transmittance of visible light in terms of visible light and the average transmittance of light in the range of 38 〇 to nm can be measured by ultraviolet light-sensing spectrophotometer. The average transmittance of #人的光光 can also be expressed by the transmittance of visible light of 55G. The transmittance of visible light varies according to the degree of zinc oxide generated by spraying or heating after coating. In addition, it is preferable to set the heating conditions (temperature and time) at the time of spraying or after coating in consideration of the transmittance of the film to visible light of 8 〇% or more in consideration of J47876.doc -44 - 201109279. Further, since the oxidized film formed by the production method of the present invention is doped with a Group 3B element, the possibility of obtaining a low-resistance film is further increased by further investigating the film formation method. The system which can be used as the substrate in the second aspect of the present invention is the same as the substrate exemplified in the first aspect of the invention. [The composition for the production of the oxidized film] The composition for producing a zinc oxide film according to the third aspect of the third aspect of the invention includes the following three aspects: (1) Dissolving the organic compound represented by the above formula (1) a product obtained by at least partially hydrolyzing the above organic compound in a solution S1 in which an electron-donating organic solvent is added (hereinafter sometimes referred to as a partial hydrolyzate U; (ii) in the above formula (1) The organic compound shown in the above is dissolved in a solution 81 containing an electron-donating organic solvent, and water is added to at least partially hydrolyze the organozinc compound, and then the group 3b element represented by the above formula (2) or (3) is added. a product obtained by at least seeding of the compound (hereinafter sometimes referred to as a partial hydrolyzate 2); (iii) an organic compound represented by the following formula (1), and a formula or (3) a product obtained by dissolving at least a kind of a compound of a Group 3B element in a solution S2 in which an electron-donating organic solvent is added, and at least partially hydrolyzing the above-mentioned organic zincified person (hereinafter sometimes referred to as partial hydrolysis) 3), Ο) W-Zn-R1 147876.d Oc •45- 201109279 (wherein R1 is a linear or branched alkyl group having a carbon number of 1 to 7) ¢2) CD b (wherein Μ is a group 3B element, and r2, R3, and R4 are independently hydrogen and carbon a straight or branched alkyl group having a number of 7 or a linear or branched alkoxy group having a carbon number of 1 to 7, a carboxylic acid group or an acetoacetone group, and further L is a nitrogen, oxygen or phosphorus. a complex organic compound, b is an integer from 〇 to 9)

McXd.aH20 (3) (式中,Μ為3B族元素,X為鹵素原子、确酸或硫酸,於χ 為函素原子或石肖酸時,c為1、d為3,於X為硫酸時,4 2、d為3、a為〇〜9之整數)。 本發明中,作為上述供電子性有機溶劑,係使用沸點為 C 乂上之供电子性有機溶劑、或含有沸點為U〇。〇:以上 之供電子性有機溶劑作為主成分的混合有機溶劑。本發明 者等人么;見’藉由使用此種溶劑,可形成具有贈。以上之 射率、且具有體積電阻率未達8x10-2〜cm之特性的 氧化辞薄膜。 專利文獻2之實施例中係祛田 ^McXd.aH20 (3) (wherein, Μ is a Group 3B element, X is a halogen atom, a sulphuric acid or a sulphuric acid, and when χ is a radiant element or a sulphuric acid, c is 1, d is 3, and X is sulfuric acid. When 4, d is 3, a is an integer of 〇~9). In the present invention, the electron-donating organic solvent is an electron-donating organic solvent having a boiling point of C 、 or a boiling point of U 〇. 〇: A mixed organic solvent containing the above-mentioned electron-donating organic solvent as a main component. The present inventors et al; see 'by using such a solvent, can be formed with a gift. The oxidized film having the above-mentioned rate and having a volume resistivity of less than 8 x 10-2 cm. In the embodiment of Patent Document 2, it is 祛田 ^

、 只肥1幻甲係使用四氫呋喃(沸點66t )作A 邛为水解用之有機溶劑, ”’、 一 „ J文獻3之實施例中係使用1 4 一 3烷(沸點lout)作為部分 , 形均可獲得透明之氧化辞二:用之有機溶劑’任1 率未達8x10-2 、—無法獲侍具有體積電阻 二10 之低電阻率的氧化鋅薄膜。使 喃或1,4-二崎拉夕柿| # Μ &amp; 4 0夫 解時☆ 係〜為:於使用該等溶劑時,於水 解時谷易抑制凝膠之生成'水 對。卩分水解物之生成較為_ 147876.doc •46- 201109279 利仁χ反覆4驗後結果發現,即便使用沸點為1听 以上之供電子性有機溶劑,亦不會於水解時生成凝膠,而 可生成部分水解物。 ㈣上述供電子性有機_,若考㈣其後塗佈步驟中 &lt;刼作性、特別是乾燥性等’則較好的是彿點為11(rc以 上之i、電子性有機溶劑。供電子性有機溶劑只要為除了彿 為述feSUx外,還對通式⑴所示之有機辞化合物及水 具有溶解性者即可,你兔7 了作為例子,可列舉:二正丁醚(沸點 〇 142_4。〇、二己 W弗點 226.2。〇、苯甲㈤沸點 153 8。〇、 苯乙醚(沸點172。〇、丁苯即弗點21〇3。〇、戍苯謎(沸點 214 C)、甲氧基甲苯(彿點⑺抑)、苄基乙醚(沸點 !89°C)、二笨醚(沸點乃8.3^、#蘆醚(ve_〇㈣沸點 2〇6.7。〇、三号院(彿點1145。〇、以及u二乙氧基乙烷 (沸點121。〇、1&gt;2_二丁氧基乙烷(沸點2〇3 3。〇等乙二醇二 甲醚又,雙(2-甲氧基乙基)醚(沸點162。〇)、雙(2_乙氧基 ◎ 乙土)醚G弗點188.4 C )、雙(2-丁氧基乙基)縫(沸點254 6。〇 ) 等=乙=醇二甲_、進而1&gt;2_雙(2_甲氧基乙氧基)乙烧(沸 點216 C )雙[2-(2-甲氧基乙氧基乙基⑽(彿點275。〇)等 三乙二醇二曱醚等醚系溶劑,三正丙基胺(沸點 )~正戊基胺('/弗點130°C ) ' N,N-二甲基苯胺 (彿點193°C)、N,N_二乙基苯胺(彿點217。〇…比啶(彿點 H5.3°C)等胺系溶劑等。作為供電子性有機溶劑,就組合 物衣備時之凝膠抑制以及溶劑自身之揮發性的兩方面之觀 點而言,較好的是作為乙二醇二曱醚之一種的1,2-二乙氧 147876.doc •47- 201109279 基乙烧(彿點121。〇。供電子性有機溶劑 特別限定,就塗佈所得之組合物後將 ^上限並無 時的乾燥時間相對變短之觀點而:除而形成塗膜 下。 。較好的是23(TC以 有弗點為11〇 c以上之供電子性有機溶劑作 的混&amp;有機溶劑只要為在混合狀態下對通式⑴所:^ 辞化合物及水具有溶解性者即可,作為例子,^斤^有機 r (^r(5$rC ^ ^^66〇C} ^ ^ =壬灿弗點150.8。〇與四氣。夫喃、壬燒與】,4-二^ *坑G弗點174.1。〇與四氫咬喃、癸燒與α二 ^ 院與四氫咳喃、十,W 、:二:十- 脱以與四氫^南、十二燒與μ 十—院(彿點 喊)與四氨咳L苯與,,4…号,甲本(彿點 138〜145。〇與四氣咬喃、二甲笨鱼二::二,苯(满點 136.2。〇與四氫Μ、乙笨—&quot;炫、乙苯«點 ⑽〜啊)與四氯“、丁二=、丁苯(沸點 窗㈠與四氣咬喃、戊苯與心,-二、戊苯(沸點 ⑹.η;)與四氣。夫喃、均苯二可坑、均三甲苯(沸點 點與四氯咬喃、二乙苯盘&quot;二-乙蝴 慮到所形成之氧化鋅薄膜的體積’:=: = 分為四氫呋喃。7 午剌較好的是副成 是作為副成分的四到製膜時之作業性,則較好的 風°夫味或1 4 -二σ号僚相料 量比為0_05〜0.45。 可烷相對於主成分之重 將上述通式(1 ) 一 )所不之化合物溶解於上述供電子性有機 147876.doc -48- 201109279 溶劑或含有上述供電子性有機 溶液中,上述通式( 此口有機溶剤而成之 、八(!)所不之化合物 質量°/〇之範圍。其原 , /又較好的是4〜;12 之濃度未達4質量、%、、刀^,當上述通式(〗)所示之化合物 以上之供電^性右超過12質量%時,即便使用沸點為 需透明性與導電性之4溶劑,亦存在難以形成具有所 溶劑…2通=膜的傾向™ ㈠〇質量%之範圍()所示之化合物的濃度較好的是, only fertilizer 1 phantom system using tetrahydrofuran (boiling point 66t) as A 邛 is the organic solvent for hydrolysis, "', a „ J document 3 in the example using 14 4 alkane (boiling point lout) as a part, shape It is possible to obtain a transparent oxidized word 2: the organic solvent used has a rate of less than 8x10-2, and a zinc oxide film having a low resistivity of a volume resistance of 2 is not obtained.喃 or 1,4-二崎拉夕柿 | # Μ &amp; 4 0 Fu Jie ☆ ~~: When using these solvents, it is easy to inhibit the formation of gels during the hydrolysis.卩 水解 水解 水解 水解 147 147 147 147 147 147 147 147 147 147 147 147 147 147 147 147 147 147 147 147 147 χ χ χ χ χ χ χ χ χ χ χ χ χ χ χ χ χ χ χ χ χ χ χ χ χ χ χ χ χ A partial hydrolyzate is formed. (4) The above-mentioned electron-donating organic _, if it is (4) in the subsequent coating step, < 刼 刼 、 、 刼 刼 刼 刼 刼 刼 ' 较好 较好 rc rc rc rc rc rc rc rc rc rc rc rc rc rc rc rc rc rc The electronic organic solvent may be one which is soluble in the organic compound represented by the general formula (1) and water in addition to the feSUx, and the rabbit 7 is exemplified by di-n-butyl ether (boiling point 〇). 142_4. 〇, 二己W弗点226.2. 〇, benzene (5) boiling point 153 8. 〇, phenyl ether (boiling point 172. 〇, butyl benzene is the point 21 〇 3. 〇, 戍 谜 ( (boiling point 214 C), Methoxytoluene (Buddha (7)), benzyl ether (boiling point: 89 ° C), diphenyl ether (boiling point 8.3 ^, # 芦 ether (ve_〇 (4) boiling point 2 〇 6.7. 〇, No. 3 ( Buddhism point 1145. 〇, and u diethoxyethane (boiling point 121. 〇, 1 &gt; 2 - dibutoxy ethane (boiling point 2 〇 3 3 〇 〇 etc. ethylene glycol dimethyl ether, double (2 -Methoxyethyl)ether (boiling point 162. 〇), bis(2-ethoxy ethane) ether G (188.4 C), bis(2-butoxyethyl) slit (boiling point 254 6). 〇) etc. = B = alcohol _, into And 1 &gt; 2 bis (2 - methoxyethoxy) Ethylene (boiling point 216 C) bis [2- (2-methoxyethoxyethyl (10) (Buddha 275. 〇) and other three ethylene two An ether solvent such as an alcohol diterpene ether, tri-n-propylamine (boiling point) ~ n-pentylamine ('/Fo 130 ° C) 'N,N-dimethylaniline (Buddha 193 ° C), N, An amine-based solvent such as N-diethylaniline (Buddhist point 217. 〇...bipyridine (Buddha point H5.3 °C). As an electron-donating organic solvent, the gel inhibition of the composition and the solvent itself From the viewpoint of the two aspects of volatility, it is preferred that 1,2-diethoxy 147876.doc as a kind of ethylene glycol diterpene ether. 47- 201109279 base ethylene burning (Buddha 121. 〇. For The electronic organic solvent is particularly limited, and the coating composition is applied, and the drying time of the upper limit is relatively short. The coating film is formed under the coating film. Preferably, 23 (TC is used as a coating point). The organic solvent which is an electron-donating organic solvent of 11 〇c or more may be a compound which is soluble in the compound of the formula (1) and water in a mixed state, and as an example, (^r(5$rC ^ ^^66〇C } ^ ^ =壬灿弗点150.8.〇和四气。夫喃,壬烧和】,4-二^*坑G弗点174.1.〇和四氢咬,癸烧和α二^院和四Hydrogen cough, ten, W,: two: ten - with and with tetrahydrogen ^, twelve burning and μ ten - hospital (Buddha shouting) and four ammonia cough L benzene with, 4, No. Buddha points 138~145. 〇 and four gas gnaw, dimethyl stupid fish two:: two, benzene (full point 136.2. 〇 and tetrahydroanthracene, B stupid - &quot; Hyun, ethylbenzene «point (10) ~ ah) and tetrachlorine, Ding II =, butyl benzene (boiling point window (a) and four gas gnaw, pentylene and heart, - two, Pentylbenzene (boiling point (6). η;) and tetragas. Furu, homobenzene dike, mesitylene (boiling point and tetrachloromethane, diethylbenzene disc), two-ethyl bromide to form the oxidation The volume of the zinc film is divided into tetrahydrofuran. 7 It is better that the by-product is the workability of the four-to-film film as a by-component, and the wind is better or the 14-two sigma. The amount of the ruthenium phase material is from 0.05 to 0.45. The compound of the above formula (1) a) is dissolved in the above-mentioned electron donating organic 147876.doc -48-201109279 solvent or contains the above with respect to the weight of the main component. In the electron-donating organic solution, the above formula (the organic solvent-soluble, eight (!) compound compound ° / 〇 range. The original, / is preferably 4 ~; 12 concentration is not When the power supply of the compound represented by the above formula (〖) is more than 12% by mass, the boiling point is required to be transparent and guided. The electroactive 4 solvent also has a tendency to form a solvent having a solvent (2 pass = film). The concentration of the compound represented by the range (%) is preferably

關於上述水之添加量,於部分水解物卜2之 其相對於上述有機鋅化合 ^ -,字 口似心旲斗比设為〇 4〜 於部分水解物3之情形時 0.8之範圍, 與3B族元素化合物之上述有機鋅化合物 圍。藉由使水之添設為〇·4〜〇.8之範 置為該粑圍,而於旋塗法、浸塗法之 情形時’所得之包含部分水解物之反應產物可形成具有體 積電阻率未達8Χΐ〇·2Ω•叫特性的氧化鋅薄膜,於噴霧敎 分解法之情形時’可形成具有體積電阻率未f3 ω 之特性的氧化辞薄膜。 進而,藉由使莫耳比為〇.4以上,而可以原料中所含之 鋅為基準謂%以上之高產率獲得包含將有機辞化合物部 分水解而成之產物的有機鋅組合物。又,於部分水解物3 之凊形日年,3 Β族元素化合物亦適量部分水解。藉由使莫耳 比為0.4以上,而於部分水解物丨、2之情形時,可抑制未 反應之原料即有機鋅化合物之殘量,於部分水解物3之情 形時,可抑制有機鋅化合物與3B族元素化合物之殘存量, 147876.doc -49· 201109279 其結果可獲得可安全操作之有機鋅組合物。又,藉由使莫 耳比為0.8以T,而可抑制水解反應中產生凝膠。若水解 反應中產生凝膠,則存在溶液黏度上升,而其後之操作變 困難之情形。就上述觀點而言,水之添加莫耳比較好的是 0.6〜0.8之範圍,更好的是〇 6〜〇 75之範圍。 …水解物2之情形時,由於係於有機鋅化合物中添 加水後添加3B族元素化合物,因此其取決於水之添加量 等,而於所添加之水被有機鋅化合物之水解消耗後添加 族元素化合物之情形時,上述產物通常不含上述族元素 化合物之水解物。3B族元素化合物亦存在以下可能性.不 進行水解而以原料之狀態含有,或者成為3b族元素化合物 ^機基(配位子)與有機鋅化合物之部分水解物所具有之 开有Π行交換(配位子交換)而成者。於部分水解物3之情 由於係在有機鋅化合物與则以化合物之混 液中添加水,因此上述產铷 之水解物㈣ 有上述3B族元素化合物 Μ解物1族元素化合物之水解 等,可為部分水解物。 、於尺之添加夏 行關:水之添加,可不將水與其他溶劑混合而僅於水中進 使用將水與其他溶劑混合而得之混合溶劑來進 :::抑制進行局部性水解之觀點而言,較好的是使^ ::劑,混合溶劑中之水的含有率例如可^〜50= 耗圍,較好的是2〜2〇質量%。血 〇質以之 溶劑例如可為上述供電子性右德昆5〉谷劑中可使用之 性有機溶劑,可為進而,作為供電子 』為11〇CU上之有機溶劑,亦可為 147876.doc -50- 201109279 、济點未達110°c之有機溶劑。但就需要對二乙基辞表現為 惰性且水之溶解性較高之觀點而言,較好的是彿點未達 110°c之有機溶劑。 ❹With respect to the above-mentioned amount of water added, in the case where the partial hydrolyzate 2 is relative to the above-mentioned organic zinc compound, the ratio of the mouth-like heart-like bucket is set to 〇4 to the partial hydrolyzate 3, and the range of 0.8, and 3B The above-mentioned organozinc compound of the group element compound. By setting the addition of water to 〇·4~〇.8, the reaction product containing the partial hydrolyzate can be formed to have volume resistance in the case of spin coating or dip coating. A zinc oxide film having a rate of less than 8 Χΐ〇·2 Ω, which is a characteristic of the spray enthalpy decomposition method, can form an oxidized film having a characteristic of a volume resistivity of not f3 ω. Further, by setting the molar ratio to 〇.4 or more, an organic zinc composition containing a product obtained by partially hydrolyzing an organic compound can be obtained in a high yield of more than or equal to the zinc contained in the raw material. Further, in the case of the partial hydrolyzate 3, the compound of the 3 steroid element is also partially hydrolyzed. When the molar ratio is 0.4 or more, in the case of the partial hydrolyzate 丨, 2, the residual amount of the unreacted raw material, that is, the organozinc compound can be suppressed, and in the case of the partial hydrolyzate 3, the organozinc compound can be suppressed. Residual amount of compound with a Group 3B element, 147876.doc -49· 201109279 The result is a safely operable organozinc composition. Further, by setting the molar ratio to 0.8 at T, gelation in the hydrolysis reaction can be suppressed. If a gel is formed in the hydrolysis reaction, there is a case where the viscosity of the solution rises and the subsequent operation becomes difficult. From the above point of view, the addition of water to the water is preferably in the range of 0.6 to 0.8, more preferably in the range of 〇 6 to 〇 75. In the case of the hydrolyzate 2, since the compound of the 3B group element is added after adding water to the organozinc compound, it depends on the amount of water added, etc., and the added water is added after the hydrolysis of the organic zinc compound is consumed. In the case of an elemental compound, the above product usually does not contain a hydrolyzate of the above-mentioned group element compound. The 3B group element compound also has the possibility of being contained in the state of the raw material without being hydrolyzed, or having the compound of the group 3b element compound (coordination) and the partial hydrolyzate of the organozinc compound. (With seat exchange). In the case of the partial hydrolyzate 3, since the organic zinc compound is added to the compound, the hydrolyzate (4) is hydrolyzed by the above-mentioned group 3B element compound disintegrator compound, and the like. Partially hydrolyzed. Adding Xia Xing Guan to the ruler: Adding water, you can mix water with other solvents and use only mixed solvent obtained by mixing water with other solvents in the water::: suppressing the viewpoint of local hydrolysis In other words, it is preferred that the content of water in the mixed solvent is, for example, 50 to 50%, preferably 2 to 2% by mass. The solvent for the blood enamel may be, for example, an organic solvent that can be used in the above-mentioned electron donating dextran, and may be an organic solvent on the 11 〇 CU, or may be 147,876. Doc -50- 201109279 Organic solvent with a temperature of less than 110 °C. However, in view of the fact that the diethylation is inert and the solubility of water is high, it is preferred that the organic solvent is not as high as 110 °C. ❹

G 水之添加亦取決於反應規模,例如可歷時⑼秒〜叫時 之間之時間來進行。就產物之產率良好之觀點而言,較好 的是藉由在作為原料的上述通式⑴之有機辞化合物中滴加 水或與水之混合溶劑而添加。水之添加可不對通式⑴所示 之化合物與供電子性有機㈣丨之溶液輯㈣(靜置之狀 態下)而實施,或者一面授拌一面實施。添加時之温度可 k擇90 1 50 C間之任意溫度。就水與有機辞化合物之反 應性的觀點而言,較好的是_15〜30&lt;t。 於水之添加後,為了進行水與通式⑴所示之化合物以 及通式(2)或(3)所^之化合物、或水與通式⑴所示之化合 物之反應,例如不授拌(靜置之狀態下)而放置i分鐘〜叫 時或進行授拌。關於反應溫度,可於肩〜靴間之任音 溫度下反應。就以高產率獲得部分水解物之觀點而言,較 好的疋5〜80C之範圍。反應壓力並無限制。通常可於常壓 U竭下實施。關於水與通式⑴所示之化合物之反應的 進^視需要可對反應混合物進行取樣,藉由職核等 ^樣⑽進仃”析’或藉由對所產生之氣體進行取樣而進行 監控。 j 上述通式⑴所示之有機鋅化合物與上 樣中所說明者相同。 月之第1態 上述通式(2)所示之3β族元素化合物及上述通式⑺所示 147876.doc -51 · 201109279 之3B族元素化合物分 者相同。其中本發明之第二ψ明之第2態樣中所說明 化人物#上、+4 通式(2)所示之3Β族元素 發明之第2態樣中通式⑺所示之-族元素 物:上述本^ 3態樣中通式(3)所示之3Β族元素化合 物。、 曰月之弟2態樣中通式(2)所示之3Β族元素化合 於本發明之組合物之部分水 3Β族元素之添加效果適度表現 月^就獲付 較為適當的是添加上述通式⑴所_2賴的觀點而言, 述通式⑽⑽機鋅化合物、與上 ,_ 化合物,以使上述通式(2) =示之3B族元素化合物相對於有機鋅化合物之莫耳 於人· 5 〇.09之比例。其中,於部分水解物2之情形時, 並:有有機鋅化合物之溶液中添加水而獲得部分 並且,以上述莫耳比添加3B族元素化合物。又,於部 於以上述莫耳比含有有機辞化合物與3B 族兀素化合物之溶射添加水而獲得部分水解物。 上述有機溶劑、作為原料之上述通式⑴之有機辞化合 物、及水或與水之混合溶劑可根據所有慣用之方法而導入 ,反應容器中。該等之反應步驟可為批次操作式、半批次 操作式、連續操作式中任意—種,並無特別 的是批次操作式。 想 =由上述反應,上述通式⑴之有機鋅化合物與 式⑺或(3)之3BM純合物、或者上述 化合物藉由水而部分水解’而獲得包含部分水解物之: 147876.doc -52- 201109279 物。通式(1)之有機鋅化合物為二乙基鋅時,對p 巧精由與水之 反應而得的產物之分析自很早開始就一直進并 订,但結果因 報告不同而不同,並未明確確定產物之組成。v X ’產物之 組成亦可因水之添加莫耳比或反應時間等而變化。 關於部分水解物1、2,推測其為下述通式(4)所示之化 合物、或m不同的複數種化合物之混合物: R^Zn-tO-Znlp-R1 (4) (式中,R1與通式(1)中之R1相同,p為2〜20之整數)。The addition of G water also depends on the scale of the reaction, for example, the time between (9) seconds and the time of the call. In view of the fact that the yield of the product is good, it is preferred to add it by dropwise adding water or a mixed solvent with water to the organic compound of the above formula (1) as a raw material. The addition of water may be carried out without adding the compound represented by the formula (1) to the solution (4) of the electron-donating organic (tetra) oxime (in the state of standing). The temperature at the time of addition can be selected at any temperature between 90 1 50 C. From the viewpoint of the reactivity of water and organic compound, it is preferably _15 to 30 &lt; t. After the addition of water, in order to carry out the reaction of water with a compound represented by the formula (1) and a compound of the formula (2) or (3), or a compound of the formula (1) with water, for example, without mixing ( In the state of standing, place it for 1 minute~ call or mix. Regarding the reaction temperature, it can be reacted at the tone temperature between the shoulder and the boot. From the viewpoint of obtaining a partial hydrolyzate in a high yield, it is preferably in the range of 5 to 80C. There is no limit to the reaction pressure. It can usually be carried out under normal pressure. Regarding the reaction of water with the compound of the formula (1), it is necessary to sample the reaction mixture, and monitor it by means of a nuclear or the like (10) or by sampling the generated gas. j The organozinc compound represented by the above formula (1) is the same as those described in the above-mentioned sample. The first phase of the month is a compound of the 3β group element represented by the above formula (2) and 147876.doc of the above formula (7). 51 · 201109279 The Group 3B element compound is the same. In the second aspect of the second aspect of the present invention, the second aspect of the invention is described in the character #1, +4 (3) a group element of the formula (7): a compound of the group 3 element represented by the formula (3) in the above-mentioned embodiment, and a formula of the formula (2) The addition effect of the 3 lanthanum element in the composition of the composition of the present invention is a modest performance of the scorpion element. It is more appropriate to add the above formula (1) to the viewpoint of the addition of the above formula (10) (10) machine zinc. a compound, and a compound of the above, such that the compound of the above formula (2) = 3B element is relative to The proportion of the zinc compound of the machine is 5 〇.09, wherein, in the case of the partial hydrolyzate 2, and the addition of water to the solution of the organic zinc compound, a portion is obtained and 3B is added with the above molar ratio. Further, a partial hydrolyzate is obtained by the addition of water containing the organic compound and the 3B halogen compound in the above molar ratio. The organic solvent, the organic compound of the above formula (1) as a raw material, And the mixed solvent of water or water can be introduced into the reaction vessel according to all the conventional methods. The reaction steps can be any of batch operation mode, semi-batch operation mode and continuous operation type, and there is no special It is a batch operation formula. In the above reaction, the organozinc compound of the above formula (1) and the 3BM complex of the formula (7) or (3), or the above compound are partially hydrolyzed by water to obtain a partial hydrolyzate. 147876.doc -52- 201109279. When the organozinc compound of the formula (1) is diethylzinc, the analysis of the product obtained from the reaction with water has been carried out since the early days. Order, but the results vary from report to report, and the composition of the product is not clearly defined. The composition of the product may also vary depending on the molar ratio of water added to the reaction time or the reaction time, etc. Regarding the partial hydrolyzate 1, 2, it is speculated A mixture of a compound represented by the following formula (4) or a plurality of compounds different in m: R^Zn-tO-Znlp-R1 (4) (wherein R1 is the same as R1 in the formula (1) , p is an integer from 2 to 20).

於本發明中,關於部分水解物3,推測產物之主成分為 下述通式(5)及(6)所示之結構單元與下述通式(7)所示之結 構單元組合而成之化合物、或m不同的複數種化合物之混 合物: (5) (6) ’ m為2〜20之整數) (Ri-Zn)- -[〇-Zn]m- (式中’ R1與通式(1)中之Ri相同In the present invention, the partial hydrolyzate 3 is a combination of a structural unit represented by the following general formulae (5) and (6) and a structural unit represented by the following general formula (7). a compound or a mixture of a plurality of compounds different in m: (5) (6) 'm is an integer of 2 to 20) (Ri-Zn)--[〇-Zn]m- (wherein R1 and formula ( 1) The same Ri in the middle

⑺ (式中,Μ與通式(2)或(3)中之Μ相同,Q與通式(2)或(3)中 之X R、R、之任一個相同,瓜為2〜2〇之整數)。 於上述有機鋅化合物水解時上述3B族元素化合物不共存 的部分水解物2之情形時,於反應結束後 ’添加上述通式 (2)或(3)之3B族化合物,藉此而製造組合物。上述3B族元 素化合物之添加量如上所述’相對於上述有機鋅化合物之 147876.doc -53- 201109279 投入量適當的是0.005〜0.09。 欠解反應束後,例如藉由過濾、濃縮、萃取 析等通常的方牛,而叮# 往層 方法而可將上述產物之-部分或全部加以回 收及純化。又’於水解反應結束後添加3B族元素化合物之 情形時,可藉由過遽將上述產物之—部分或全部加以回收 於反應產物中殘存作為原料的通式⑴之有機辞化 …’亦可藉由上述方法進行回收,較好的是進行回 ^藉由該等方法將殘存之原料回收後的反應產物較好的 解物1〜3广任一情形均不含通式⑴所示之有機鋅 口 ,例如較好的是通式⑴所示之有機辞化合物之含 :為肖量%以下。本發明之組合物於製成塗佈液使用 二均勻之膜的觀點而言’較好的是不含未反應而 戔子之通式(1)所示之有機鋅化合物者。 述方法而製備之溶液可直接用作氧化鋅薄膜形成 牛:用溶液。或亦可進行適當稀釋或濃縮,就可簡化 之觀點而言,較好的是藉由上述方法而製備之溶 y直接用作氧化鋅薄膜形成用之塗佈用溶液的濃度。 [氧化辞薄膜之製造方法] 使用本發明之第3態樣之氧化鋅薄膜形成用組合物的氧 製造方法,於下述本發明之第4態樣之氧化辞 溥膜之製造方法中進行說明。 [氧化鋅薄膜之製造方法(第4態樣)] 之第4態樣之製造方法中所用的氧化辞薄膜製造 “物包含以下3個態樣、組合物A〜c '组合物Α與第3 147876.doc 201109279 態樣之氧化辞薄膜製造用組合物⑴相同,組合物B與第3態 樣之氧化辞薄膜製造用組合物(ii)相同,組合物c與第3態 樣之氧化辞薄膜製造用組合物(iii)相同。 (組合物A)係以下產物(以下有時稱為部分水解物”,該 產物係於將上述通式(1)所示之有機鋅化合物溶解於供電子 性有機溶劑而成之溶液中,添加水而將上述有機鋅化合物 至少部分水解而獲得; (組合物B)係以下產物(以下有時稱為部分水解物幻該 〇 產物係於將上述通式(1)所示之有機鋅化合物溶解於供電子 性有機溶劑而成之溶液中,添加水而將上述有機鋅化合物 至少部分水解後,添加上述通式(2)或(3)所示之3B族元素 化合物的至少1種而獲得; (組合物C)係以下產物(以下有時稱為部分水解物3),該 產物係於將下述通式(1)所示之有機鋅化合物、與下述通式 (2)或(3)所示之3B族元素化合物的至少丨種溶解於供電子性 ◎ 有機,谷劑而成之溶液中,添加水而至少將上述有機辞化合 物至少部分水解而獲得: R'-Zn-R1 ⑴ (式令,R1為碳數1〜7之直鏈或支鏈烷基)(7) (wherein, Μ is the same as Μ in the formula (2) or (3), Q is the same as any of XR, R, in the formula (2) or (3), and the melon is 2 to 2 Integer). In the case of the partial hydrolyzate 2 in which the above-mentioned Group 3B element compound does not coexist when the organozinc compound is hydrolyzed, the composition of the Group 3B of the above formula (2) or (3) is added after the completion of the reaction, thereby producing a composition. . The amount of the above-mentioned Group 3B element compound to be added is as described above. Between 147876.doc -53 and 201109279, the amount of the organic zinc compound is appropriately 0.005 to 0.09. After the reaction beam is not decomposed, for example, by filtering, concentrating, extracting, and the like, a conventional square ox, and the 往# layering method, part or all of the above product may be recovered and purified. Further, in the case where a compound of a 3B group element is added after completion of the hydrolysis reaction, it is also possible to recover part or all of the above-mentioned product by over-twisting, and to reproduce the organic reversion of the general formula (1) as a raw material in the reaction product. It is preferred to carry out the recovery by the above method, and it is preferred to carry out the reaction product obtained by recovering the remaining raw materials by these methods, and the preferred product is 1 to 3, and the organic compound represented by the general formula (1) is not contained in any case. For the zinc port, for example, it is preferred that the content of the organic compound represented by the formula (1) is not more than 5% by volume. The composition of the present invention is preferably an organic zinc compound represented by the formula (1) which does not contain an unreacted oxime from the viewpoint of using a film which is uniform in the coating liquid. The solution prepared by the method can be directly used as a zinc oxide film to form a bovine: solution. Alternatively, it may be appropriately diluted or concentrated. From the viewpoint of simplification, it is preferred that the solution prepared by the above method is used as the concentration of the coating solution for forming a zinc oxide film. [Manufacturing method of the oxidized ruthenium film] The oxygen production method of the composition for forming a zinc oxide thin film according to the third aspect of the present invention is described in the following method for producing the oxidized sputum film according to the fourth aspect of the present invention. . [Manufacturing Method of the Zinc Oxide Film (Fourth Aspect)] The oxidized film produced in the fourth aspect of the production method includes "the following three aspects, the composition A to c' composition Α and the third 147876.doc 201109279 The composition (1) is the same as the composition for the production of the oxidized film, and the composition B is the same as the composition (ii) for the production of the oxidized film of the third aspect, and the composition c and the oxidized film of the third aspect. The composition for manufacture (iii) is the same. (Composition A) is a product (hereinafter sometimes referred to as a partial hydrolyzate) which is obtained by dissolving an organozinc compound represented by the above formula (1) in electron donating property. In the solution obtained from the organic solvent, water is added to at least partially hydrolyze the above-mentioned organozinc compound; (composition B) is the following product (hereinafter sometimes referred to as a partial hydrolyzate), which is based on the above formula ( 1) The organozinc compound shown is dissolved in a solution containing an electron-donating organic solvent, and after adding at least partial hydrolysis of the above-mentioned organozinc compound by adding water, the 3B group represented by the above formula (2) or (3) is added. Obtained from at least one of elemental compounds; (Composition C) is a product (hereinafter sometimes referred to as partial hydrolyzate 3) which is an organozinc compound represented by the following formula (1), and the following formula (2) or (3) At least one of the group 3B element compounds shown in the above is dissolved in a solution of an electron donating ◎ organic, gluten, and water is added to at least partially hydrolyze the above organic compound: R'-Zn-R1 (1) (Order, R1 is a linear or branched alkyl group having a carbon number of 1 to 7)

McXd.aH20 ⑺ (式中,Μ為3B族το素,X為齒素原子、確酸或硫酸,於χ 為齒素原子或補酸時’ c為卜d為3,於又為硫酸時,。為 2、d為3、a為0〜9之整數) 147876.doc -55- 201109279 R2-M-R3 ί *(L) b (3) R4 (式中,M為3B族元素,R2' R3、R4獨立為氫、碳數卜7之 直鏈或支鏈烷基、碳數丨〜7之直鏈或支鏈烷氧基 '羧酸 基、或乙醯丙酮基,進而,^為含有氤、氧、磷中任一種 的配位性有機化合物,b為〇〜9之整數)。 [製造方法] 本發明之第4態樣係關於氧化辞薄膜之製造方法。該製 造方法係將上述氧化鋅薄膜形成用組合物塗佈於基板表 面,繼而將所得之塗佈膜進行加熱而獲得氧化鋅薄膜之方 法。例如藉由旋塗法、浸塗法進行塗佈時,可獲得具有 80%以上之平均透射率且具有體積電阻率未達8χΐ〇_2 之特性的氧化鋅薄膜。例如藉由喷霧熱分解法進行塗佈 時可形成對可見光具有80%以上之平均透射率且具有體 積電阻率未達lxlG_3仏⑽之特性的氧化辞薄膜。 於基板表面之塗佈可藉由浸塗法、旋塗法、喷霧熱分解 法、噴墨法、網版印刷法等慣用方法來實施。 組合物於基板表面之塗佈可於氮氣等惰性氣體環境下、 二氣%境下、含有大量水蒸氣之相對濕度較高之空氣環境 下、氧乳等氧化氣體環境下、氫氣等還原氣體環境下、或 該等之混合氣體環境下等之任一環境下、且於大氣壓或加 壓下實施。 於旋塗法、浸塗法中,可於惰性氣體環境下形成,進而 亦可於藉由使惰性氣體與水蒸氣現合而成之相對濕度為 147876.doc * 56 - 201109279 2〜15%之環境下進行。 噴霧熱π解法係可-面加熱基板—面進行塗佈之 因此’可在塗佈之同時將溶劑乾燥,根據條件 &amp; 需用以乾燥溶劑之加熱的情形。進而,根據條 * Τ乾燥W外’還至少部分進行有機鋅化合物之部分水解 物向氧化辞之反應的情形。因此,亦存在更容易= Ο Ο 鄉即利用特定溫度下之加熱而形成氧化鋅薄膜之情形。λ 板之加熱溫度例如可為50〜550它之範圍。 土 圖17表示本發明之噴霧熱分解法中可使用之噴霧製膜震 置。圖中表示填充有塗佈液之喷霧瓶、2表示基板固持 :莫3表示喷霧嘴、4表示壓縮機、5表示基板、6表示水赛 乳導入用管。關於喷塗,係將基板設置於基板固持“ t ’視需要使用加熱器將其加熱至特定溫度,㈣於特定 辰境中,自配置於基板上方之喷霧嘴3同時供給經壓縮之 ‘隋性氣體與塗佈液,使塗佈液霧化而進行喷霧,藉此可於 基板上形成氧化鋅薄膜。氧化鋅薄膜係藉由進行噴塗而無 需追加之加熱等而形成。 ,關於塗佈液之喷塗’就可製造具有良好膜特性之氧化辞 薄膜之觀點而言,較好的是將塗佈液自噴霧嘴以液滴大小 成為1〜15 μΐη之範圍之方式喷出,且將喷霧嘴與基板之距 離設為5〇 cm以内來進行。 右考慮到對基板之附著性、溶劑蒸發之容易性等,則關 於自噴霧嘴喷出之液滴大小,較好的是所有液滴大小處於 1〜3〇 之範圍。液滴大小更好的是處於3〜2〇 之範圍。 147876.doc -57- 201109279 若考慮到自噴霧嘴起至到達基板之前 液滴大小減小等,則較好的 分蒸發而使 ⑽以内。就可良好地形成氧化 離為 盥Λ柘之re M 、之觀點而言,喷霧嘴 與基板之距離較好的是2〜40cm之範圍。 於噴霧熱分解法中,就形成體 ± 電阻率更低之氧化辞薄 用\6導/的是於惰性氣體環境下自水蒸氣導入 I 洛乳而促進組合物之分解。例如水基氣之導 =相對於所供給之上述組合物中之辞的莫耳’比計較好 ::·1:5,就獲得體積電阻率更低之氧化辞薄膜之觀點 ::’更好的是。.3〜2。若水蒸氣之導入量以上述莫耳比 〜2之範圍,則可形成具有體積電阻率未達lxl0-3 之更加良好之膜特性的氧化辞薄膜。 關於水蒸氣之導人方法,可根據所有㈣之方法而導入 乳化鋅薄膜製造容器中。較好的是水蒸氣與組合物於經 加熱之基板附近反應’例如可列舉:利用管 對水進行起泡而製作之含有水蒸氣之㈣氣 ^ 熱之基板附近。 於基板表面塗佈塗佈液後’視需要將基板設定為特定溫 度,並將溶劑乾燥,然後於特定溫度下進行加熱,藉此Z 形成氧化辞薄膜。 將溶劑乾燥之溫度例如可為20〜20〇r之範圍,可根據共 存之有機溶劑的種類而適時設定。溶劑乾燥後之用以形成 氧化鋅之加熱溫度例如為50〜55(rc之範圍,較好的是 50〜50(TC之範圍。亦可使溶劑乾燥溫度與其後用以形成氧 147876.doc -58- 201109279 化辞之加熱溫度相同,而一 成。 、進仃洛劑乾燥與氧化辞形 視需要,亦可推# 等還原氣體環境下、::氧=化!體環境下、氫氣 熱’而促進氧化鋅形成 …漿核境下進行上述加 ' #並無特別限制,實用上^同”曰曰性。氧化辞薄膜之膜 藉由將上述t 於嘴霧熱分解法以外之情形時,可 精由將上述塗佈(乾燥)加孰 Ο 範圍之膜厚的薄模。'' ^上’而適當製造上述 藉由本發明之贺# 士、丄π /, 方法形成之氧化辞薄膜會根據塗佈 積電阻率者,更好的是具有未達 阻可葬·Γ之體積電阻率。體積電阻率係每單位體積之電 ^ 將表面電阻與膜厚相乘而求得。表面電阻例如 錯四探針法而測定,膜厚例如藉由随(scan— ❹j二一cn5scope ’掃描電子顯微鏡)測定、觸針式輪廓 ,、旱。由於體積電阻率會根據因噴塗時或塗佈 後之加熱所致之氧化鋅的生成程度而變化(增大),因此較 好的是考慮使薄膜之體積電阻率成為8xl0_2n.cm而設定噴 塗時或塗佈後之加熱條件(溫度及時間)。 藉由本發明之製造方法而形成之氧化辞薄膜較好的是對 可見光具有80%以上之平均透射率者,更好的是對可見光 具有85%以上之平均透射率。所謂「對可見光之平均透射 率」係以如下方式加以定義並進行測定。所謂對可見光 147876.doc •59- 201109279 之平均透射率,係指380〜780 nm之範圍之光線的透射率之 平均’可藉由紫外可見分光光度計而測定。再者,對可見 光之平均透射率亦可藉由提示550 nm之可見光的透射率而 表現。由於對可見光之透射率會根據因噴塗時或塗佈後之 加熱所致之氧化鋅的生成程度而變化(增大),因此較好的 是考慮使薄膜對可見光之透射率成為80%以上而設定噴塗 時或塗佈後之加熱條件(溫度及時間)。 於本發明之第3態樣及第4態樣中可用作基板的係與本發 明之第1態樣中所例示之基板相同。可用作基板的例如可 為鹼玻璃、無驗玻璃、透明基材膜,透明基材膜可為塑膠 膜。但並非旨在限定於該等例示之材料。 [氧化辞薄膜之用途] 错由上述方法而製作&lt;氧化鋅薄膜由於具有I異之透明 性^導電性’因此可用作抗靜電膜、紫外線截斷膜、透明 導電膜等。抗靜電膜例如可用於固體電場電容器、化學增 幅系抗㈣卜窗玻璃等建材等領域。紫外線截斷膜例如; 用於圖像顯示裝置之前面遽光片、行車記錄器⑴加 —Μ等攝像裝置、高壓放電燈等照明器具、鐘錶用蓋 玻璃、窗玻璃等達叔·笼 _等錢。進而透明導電膜例如可用於 rD(flat panel display » 4c - aa \ 志 及電容式觸控面板、U 式觸控面板McXd.aH20 (7) (wherein, Μ is a 3B group of τ, Z is a dentate atom, a sulphuric acid or a sulphuric acid, and when χ is a dentate atom or a supplemental acid, 'c is a d is 3, and when it is sulfuric acid, 2, d is 3, a is an integer from 0 to 9) 147876.doc -55- 201109279 R2-M-R3 ί *(L) b (3) R4 (where M is a 3B group element, R2' R3 and R4 are independently a hydrogen or a straight or branched alkyl group of carbon number 7, a linear or branched alkoxy 'carboxylic acid group having a carbon number of 丨7, or an acetoacetone group, and further, A coordinating organic compound of any of hydrazine, oxygen, and phosphorus, and b is an integer of 〇~9). [Production Method] The fourth aspect of the present invention relates to a method for producing an oxidized film. This production method is a method in which the composition for forming a zinc oxide thin film is applied onto a surface of a substrate, and then the obtained coating film is heated to obtain a zinc oxide thin film. For example, when it is applied by a spin coating method or a dip coating method, a zinc oxide thin film having an average transmittance of 80% or more and having a volume resistivity of less than 8 χΐ〇 2 can be obtained. For example, when applied by spray pyrolysis, an oxidized film having an average transmittance of 80% or more for visible light and having a bulk resistivity of less than lxlG_3 仏 (10) can be formed. The application to the surface of the substrate can be carried out by a conventional method such as dip coating, spin coating, spray pyrolysis, ink jet or screen printing. The coating of the composition on the surface of the substrate can be carried out under an inert gas atmosphere such as nitrogen, a two-gas atmosphere, an air environment containing a relatively large amount of water vapor, a oxidizing gas atmosphere such as oxygen emulsion, and a reducing gas atmosphere such as hydrogen. It is carried out under any atmosphere, such as under a mixed gas atmosphere, under atmospheric pressure or under pressure. In the spin coating method or the dip coating method, it can be formed under an inert gas atmosphere, and the relative humidity by bringing the inert gas into contact with water vapor is 147876.doc * 56 - 201109279 2~15% Under the environment. The spray thermal π solution is a surface-heatable substrate-surface coating. Therefore, the solvent can be dried at the same time as the coating, depending on the conditions &amp; Further, the reaction of the partial hydrolyzate of the organozinc compound to the oxidation is carried out at least partially according to the strip * Τ dry W. Therefore, there is also a case where it is easier to form a zinc oxide film by heating at a specific temperature. The heating temperature of the λ plate may be, for example, in the range of 50 to 550. Soil Figure 17 shows the spray film formation shock that can be used in the spray pyrolysis method of the present invention. The figure shows a spray bottle filled with a coating liquid, and 2 denotes a substrate holding: Mo 3 indicates a spray nozzle, 4 indicates a compressor, 5 indicates a substrate, and 6 indicates a water emulsion introduction tube. Regarding spraying, the substrate is placed on the substrate to hold "t" as needed to heat it to a specific temperature, and (4) in a specific environment, the spray nozzle 3 disposed above the substrate is simultaneously supplied with a compressed '隋The gas and the coating liquid are atomized and sprayed, whereby a zinc oxide thin film can be formed on the substrate. The zinc oxide thin film is formed by spraying without additional heating or the like. From the viewpoint of producing a oxidized film having good film characteristics, it is preferred that the coating liquid is ejected from the spray nozzle in such a manner that the droplet size becomes 1 to 15 μΐη, and The distance between the spray nozzle and the substrate is set to be within 5 〇cm. The right is considered to be adhesion to the substrate, easiness of evaporation of the solvent, etc., and it is preferable that the liquid droplets ejected from the spray nozzle are all liquids. The droplet size is in the range of 1 to 3 Å. The droplet size is preferably in the range of 3 to 2 。. 147876.doc -57- 201109279 If the droplet size is reduced from the time of the spray nozzle to the arrival of the substrate, Better partial evaporation Within the range of (10), the distance between the spray nozzle and the substrate is preferably in the range of 2 to 40 cm from the viewpoint of good formation of re-oxidation to re-M. In the spray pyrolysis method, the formation is performed. ± The lower resistivity of the oxidized thinner is guided by the introduction of I milk from water vapor in an inert atmosphere to promote the decomposition of the composition. For example, the guidance of water-based gas = relative to the above-mentioned composition supplied The Moer's in the middle of the word is better::·1:5, the viewpoint of obtaining a thin film with a lower volume resistivity:: 'Better is. 3~2. If the amount of water vapor introduced is the above In the range of molar ratio ~2, an oxide film having a volume resistivity of less than lxl0-3 can be formed. For the introduction method of water vapor, an emulsified zinc film can be introduced according to all the methods (4). In the production container, it is preferred that the water vapor reacts with the composition in the vicinity of the heated substrate. For example, the vicinity of the substrate containing water vapor (4) which is formed by bubbling water with a tube is used. After coating the coating solution, 'set the substrate as needed At a specific temperature, the solvent is dried and then heated at a specific temperature to form a oxidized film. The temperature at which the solvent is dried can be, for example, in the range of 20 to 20 Torr, and can be timely according to the type of the organic solvent coexisting. The heating temperature for forming zinc oxide after the solvent is dried is, for example, 50 to 55 (the range of rc, preferably 50 to 50 (the range of TC. The solvent drying temperature may also be used to form oxygen 147876. Doc -58- 201109279 The heating temperature of the word is the same, and the temperature is 10%. The drying and oxidation of the sputum agent can be used as needed, and can also be pushed under the reducing gas environment:: oxygen = chemical environment, hydrogen Heat's to promote the formation of zinc oxide... The above-mentioned addition of the slurry core is not particularly limited, and it is practically similar. The film of the oxidized film can be obtained by applying the above-mentioned coating (drying) to a thin film having a film thickness in the range of 雾 。. The above-mentioned oxidized film formed by the method of the present invention is suitably manufactured according to the method of coating the resistivity of the coating, and it is more preferable to have a volume which is not damped and can be buried. Resistivity. The volume resistivity is obtained per unit volume of electricity ^ by multiplying the surface resistance by the film thickness. The surface resistance is measured by, for example, a four-probe method. The film thickness is measured, for example, by (scan- 二j cn5scope ′ scanning electron microscope), stylus-type profile, and drought. Since the volume resistivity changes (increases) depending on the degree of formation of zinc oxide due to heating at the time of spraying or after coating, it is preferable to set the volume resistivity of the film to 8×10 −2 n·cm and set the spraying time. Or heating conditions (temperature and time) after coating. The oxidized film formed by the production method of the present invention preferably has an average transmittance of 80% or more for visible light, and more preferably 85% or more for visible light. The "average transmittance to visible light" is defined and measured as follows. The average transmittance for visible light 147876.doc •59- 201109279 means that the average transmittance of light in the range of 380 to 780 nm can be determined by an ultraviolet-visible spectrophotometer. Furthermore, the average transmittance of visible light can also be expressed by the transmittance of visible light at 550 nm. Since the transmittance to visible light changes (increases) depending on the degree of formation of zinc oxide due to heating at the time of spraying or after application, it is preferable to make the transmittance of the film to visible light 80% or more. Set the heating conditions (temperature and time) at the time of spraying or after coating. The substrate which can be used as the substrate in the third aspect and the fourth aspect of the present invention is the same as the substrate exemplified in the first aspect of the present invention. For example, the substrate may be an alkali glass, a non-glass, or a transparent substrate film, and the transparent substrate film may be a plastic film. However, it is not intended to be limited to such exemplified materials. [Use of Oxidation Film] The zinc oxide film is made of the above method. The zinc oxide film can be used as an antistatic film, an ultraviolet cut film, a transparent conductive film or the like because of its transparency. The antistatic film can be used, for example, in the fields of solid electric field capacitors, chemical amplification systems, (four) window glass, and the like. Ultraviolet cut-off film, for example; used in front of image display device, such as calendering film, driving recorder (1), camera device such as Μ, high-pressure discharge lamp, lighting device for watch, cover glass for clock, window glass, etc. . Further, the transparent conductive film can be used, for example, for rD (flat panel display » 4c - aa \ and capacitive touch panel, U-type touch panel

板/專膜矽太陽電池及化合物(CdT CIS)系薄膜太陽電池、色素增感太陽電池 陽電池等領域。但並非旨在限定於該等領域。專膜太 雖重複,但藉由上述方法而製作之氧化辞薄膜係對可見 147876.doc •60- 201109279 光具有高透射性、透明Η且古耕 ^ 遗月且具有體積電阻率未達8X10-2 Q.cm .性者,其可用於卿(平板顯示器)之電極,電阻膜式 觸控面板及電玄 人扳及电合式觸控面板之電極,薄膜石夕太陽電池及化 ㈣,(碼化銅鋼))系薄膜太陽電池、色素增感太 ;有機系薄臈太陽電池之上部電極’紫外線截斷 膜,抗靜《,紅外線反射膜等,而具有廣泛的用途。 [氧化辞薄膜形成用組合物(第5態樣)] Ο Ο ,本fx明之第5態樣之摻雜氧化鋅薄膜形成用組合物之特 徵在於:於具有供電子性之有機溶劑中含有下述通式⑴所 不之有機鋅化合物與下述通式(2〇)所示之有機戰元素化 合物,上述有機3B族元素化合物相對於上述有機鋅化合物 之莫耳比為0.001〜〇·3之範圍: R^Zn-R1 (!) (式中,R1為碳數1〜7之直鏈或支鏈烷基) r20-™m-rsq I (2 0) R40 (式中,Μ為3B族元素,r20、r30及r40獨立為氯或碳數卜7 之直鏈或支鏈烷基)。 作為通式(1)所示之有機鋅化合物中之Rl所表示的院基 之具體例,可列舉:甲基、乙基、丙基、異丙基、丁基、 異丁基、第二了基、第三丁基、戊基、異戊基、新戊基、 第三戊基、己基、#己基、第二己基、第三己基、2-己 基、及庚基。通式所示之化合物較好的是R1之碳數為 1、2、3、4、5、或6之化合物。通式⑴所示之化合物特別 I47876.doc -61- 201109279 好的是R1為乙基之二乙基鋅。 作為通式(20)所示之有機3B族元素化合物中之μ所表示 的3Β族元素’可列舉β、a卜Ga、In、Τ1。又,作為R20、 R30、及R40所表示之烷基的具體例,可列舉··甲基、乙 基、丙基、異丙基、丁基、異丁基、第二丁基、第三丁 基、戊基、異戊基、新戊基、第三戊基、己基、異己基、 第二己基、第三己基、2_己基、及庚基。通式(2〇)所示之 化合物較好的是]V[為B、Al、Ga或In,且R2。、r3q、及r4〇 獨立為氫、或其碳數為丨、2、3、4、5、或6之化合物。通 式(20)所示之化合物特別好的是硼烷、氫化鋁三乙基胺、 二甲基姻、三乙基細。 二乙基鋁、三甲基鎵、三乙基鎵、 上述有機3B族元素化 R3°及R40均為乙基的 就價格便宜且容易獲得之觀點而言, 合物特別理想的是:Μ為鋁、且r2〇、 三乙基I呂;Μ為鎵、 鎵;Μ為銦、且R20、 且R20、R30及R40均為甲基的三甲基 R及R40均為甲基的三曱基銦。 通式_示之有機3Β族元素化合物相對於通式⑴所示 之有機鋅化合物的莫耳比較好的是G.GOi〜〇.3,更好的是 0.0 1 〜〇 · 1 〇 作為具有供電子性之溶劑的例子, 一 J丁 J列舉:三甲基胺、 二乙基胺、三苯基胺等胺系溶劑, 蜒、二正丙醚、二 異丙醚、二丁醚、四氫呋喃、二 _ 几 乙二醇二甲醚、二 乙-知一甲喊、三乙二醇二甲醚等驗系溶劑等。作為具 供電子性之溶劑’特別好的是二異丙醚。 ‘、 於本發明中,就製造透明的氧化辞薄膜之觀點而言,較 147876.doc -62· 201109279 好的是上述有機鋅化合物與有機38族化合物之合計濃度為 15質量%以下。上述有機鋅化合物與有機3B族化合物之合 計濃度較好的是1〜10質量%,更好的是3〜1〇質量%。上述 有機鋅化合物與有機3B族化合物之合計濃度對著火等氧化 鋅薄膜製造時之危險性有影響,藉由設為上述範圍,可不 用特別小心而安全地製造良好透明性之氧化辞薄膜。上述 組合物之有機3B族元素化合物之濃度係考慮有機3b族元 素化合物相對於上述有機鋅化合物之莫耳比而適當決定。Plate/special film solar cells and compounds (CdT CIS) are thin-film solar cells, dye-sensitized solar cells, and other fields. However, it is not intended to be limited to such fields. Although the film is too repetitive, the oxidized film produced by the above method has high transmittance, transparent Η and ancient glory, and has a volume resistivity of less than 8X10- visible 147876.doc •60-201109279 2 Q.cm. Sexuality, which can be used for the electrode of Qing (flat panel display), the electrode of resistive film type touch panel and the electrode of electro-optical and electro-optical touch panel, and the thin film of solar cell solar cell (4), (coded) Copper steel)) is a thin-film solar cell, and the dye is sensitized too much; the organic thin-film solar cell upper electrode 'UV cut-off film, anti-static, infrared reflective film, etc., has a wide range of uses. [The composition for forming an oxidized film (the fifth aspect)] Ο Ο The composition for forming a doped zinc oxide thin film according to the fifth aspect of the present invention is characterized in that it is contained in an organic solvent having electron donating properties. The organozinc compound represented by the formula (1) and the organic warfare element compound represented by the following formula (2), wherein the molar ratio of the organic group 3B element compound to the organozinc compound is 0.001 to 〇·3 Range: R^Zn-R1 (!) (wherein, R1 is a linear or branched alkyl group having a carbon number of 1 to 7) r20-TMm-rsq I (2 0) R40 (wherein, Μ is a 3B group The elements, r20, r30 and r40 are independently a linear or branched alkyl group of chlorine or carbon number. Specific examples of the hospital base represented by R1 in the organozinc compound represented by the formula (1) include a methyl group, an ethyl group, a propyl group, an isopropyl group, a butyl group, an isobutyl group, and a second one. Base, tert-butyl, pentyl, isopentyl, neopentyl, third amyl, hexyl, #hexyl, second hexyl, third hexyl, 2-hexyl, and heptyl. The compound of the formula is preferably a compound wherein R1 has a carbon number of 1, 2, 3, 4, 5 or 6. The compound represented by the formula (1) is particularly preferable. I47876.doc -61- 201109279 It is preferred that R1 is diethylzinc of ethyl. Examples of the 3 steroid element represented by μ in the organic Group 3B element compound represented by the formula (20) include β, a, Ga, In, and Τ1. Further, specific examples of the alkyl group represented by R20, R30, and R40 include a methyl group, an ethyl group, a propyl group, an isopropyl group, a butyl group, an isobutyl group, a second butyl group, and a third butyl group. Base, pentyl, isopentyl, neopentyl, third amyl, hexyl, isohexyl, second hexyl, third hexyl, 2-hexyl, and heptyl. The compound represented by the formula (2〇) is preferably]V [ is B, Al, Ga or In, and R2. And r3q, and r4〇 are independently hydrogen, or a compound having a carbon number of 丨, 2, 3, 4, 5, or 6. Particularly preferred compounds of the formula (20) are borane, aluminum triethyl hydride, dimethyl sulphate, and triethyl succinimide. Diethylaluminum, trimethylgallium, triethylgallium, and the above-mentioned organic 3B group elemental R3° and R40 are all ethyl groups. From the viewpoint of being inexpensive and easily available, the compound is particularly desirable: Aluminum, and r2〇, triethyl Ilu; lanthanum is gallium, gallium; lanthanum is indium, and R20, and R20, R30 and R40 are all methyl, trimethyl R and R40 are methyl indium. The compound of the formula 3 is preferably a G.GOi~〇.3, more preferably 0.01 to 〇·1 相对 as the organic molybdenum compound represented by the formula (1). An example of an electronic solvent, an amine solvent such as trimethylamine, diethylamine or triphenylamine, hydrazine, di-n-propyl ether, diisopropyl ether, dibutyl ether, tetrahydrofuran, Two _ diglycidyl dimethyl ether, two ethyl - Zhiyijia shout, triethylene glycol dimethyl ether and other laboratory solvents. Particularly preferred as the solvent for electron supply is diisopropyl ether. In the present invention, from the viewpoint of producing a transparent oxidized film, the total concentration of the above organozinc compound and the organic group 38 compound is preferably 15% by mass or less as compared with 147876.doc-62·201109279. The total concentration of the above organozinc compound and the organic 3B group compound is preferably from 1 to 10% by mass, more preferably from 3 to 1% by mass. The total concentration of the above-mentioned organozinc compound and the organic group 3B compound affects the risk of the production of the zinc oxide film such as fire, and by setting it as the above range, it is possible to produce a good transparency of the oxidized film without special care. The concentration of the organic Group 3B element compound of the above composition is appropriately determined in consideration of the molar ratio of the organic Group 3b element compound to the above organozinc compound.

本發明之組合物可藉由將上述通式⑴之有機辞化合物 與上述通式(2)之有機3B化合物溶解於具有供電子性之有 機溶劑中而製造。 上述通式(1)之化合物與上述通式(2)之化合物可根據所 有慣用之方法使其溶解,即便使與溶劑之混合物彼此溶解 亦可製造。上述通式⑴之化合物與上述通式⑺之化合物 可按任意順序溶解。 [摻雜有3B族元素之氧化辞薄膜之製造方法(第縐· 本發明之摻雜有職元素之氧化辞薄膜之製造方法的特 徵在於:於大氣壓或加壓下'The composition of the present invention can be produced by dissolving the organic compound of the above formula (1) and the organic 3B compound of the above formula (2) in an organic solvent having electron donating properties. The compound of the above formula (1) and the compound of the above formula (2) can be dissolved by any conventional method, and can be produced by dissolving a mixture with a solvent. The compound of the above formula (1) and the compound of the above formula (7) can be dissolved in any order. [Manufacturing method of an oxidized film doped with a Group 3B element (The second method of producing a oxidized film doped with a working element of the present invention is characterized in that it is under atmospheric pressure or under pressure]

Γ不孖在之%境下、且300〇C 以下之基板溫度下’將上述本發明之細人札a 赞Η之組合物噴塗於基板表 面,而形成摻雜有3Β族元素之氧化辞薄膜。 本發明之製造方法係使用噴塗法。 或加壓下、於氧化鋅薄膜 所謂加壓下,例如係壓力 。但並不旨在限定於此。 於基板表面之喷塗係於大氣壓 之氧源即水存在之環境下進行。 為101.3〜202.6 kPa之範圍的情形 147876.doc •63- 201109279 實:I:之方法中之嘴塗亦可於減逐下實施,但於減 ',、、優點,而於大氣壓下實施於裝 簡便,因而較好。 回|季乂為 所謂於基板表面之喷塗…水存在之環境」,例如可 為相對濕度為20〜90%之含水空氣環境。亦可於使氮氣盥 水混合而成之混合氣體環境下進行來代替於空氣環境下進 仃。就氧化鋅薄膜之生成較平穩之觀點而言,相對濕度更 好的是30〜70%之範圍。 於基板表面之噴塗可於3〇〇t以下之基板溫度下進行。 更具體而言’較好的是將進行喷塗之環境溫度設為⑽以 下’且將基板溫度設為3G(rc以下。就氧化鋅薄膜之生成 較平穩之觀點而言,進行噴塗之環境溫度較好的是 1〇〜3〇°C之範圍,基板溫度較好的是10〜20〇t,更好的是 20〜1〇〇。(:之範圍。 疋 圖23係表示本發明中可使用之喷霧製膜裝置。圖中,i 表示填充有塗佈用組合物之噴霧瓶、2表示基板固持器、3 表示噴霧嘴、4表示壓縮機、5表示基板。關於噴塗,係將 基板設置於基板固持器2上,視需要使用加熱器將其加熱 至300°C以下之特定溫度,然後於大氣中(大氣壓下、空氣 中),自配置於基板上方之喷霧嘴3同時供給經壓縮之惰性 氣體與塗佈用組合物,使塗佈用組合物霧化而進行噴霧, 藉此可於基板上形成氧化辞薄膜。摻雜有3B族元素之氧化 鋅薄膜係藉由進行喷塗而無需追加之加熱等而形成。 關於塗佈用組合物之噴塗,就可製造良好透明性之氧化 147876.doc -64 - 201109279 辞薄膜之觀點而言,較好的是將塗佈用組合物自喷霧嘴以 液滴大小成為卜30 μΐη之範圍之方式喷出,且將噴霧嘴與 基板之距離設為50 em以内來進行。進而,就熱對基板之 影響以及能量成本之觀點而言,較好的是進行喷塗之環境 溫度為4〇t以下,且基板之溫度為3〇〇它以下。 ’若考慮到對基板之附著性、溶劑蒸發之容易性等,則關 於自噴霧嘴喷出之液滴大小,較好的是所有液滴大小處於 1〜3〇μΓΠ之範圍。液滴大小更好的是處於3~2〇叫之範圍。 0 若考慮到自噴霧料至到達基板之前溶劑部分蒸發而使 液滴大小減小等,則較好的是使喷霧嘴與基板之距離為5〇 m以内京尤可良好地形成氧化鋅薄膜之觀點而言’噴霧嘴 與基板之距離較好的是2〜40 cm之範圍。 進而,即便不對基板及環境溫度進行加熱,而僅自配置 於基板上方之噴霧嘴3同時供給經壓縮之惰性氣體與塗佈 用組合物,使塗佈用組合物霧化而進行喷霧,亦可根據條 #(液滴大小、組合物之組成(濃度)、喷霧嘴與基板之距離 等)而於基板上形成透明性高之摻雜有3B族元素之氧化 鋅薄膜。 #由本發明之製造方法而形成之摻雜有3B族元素之氧化 .㈣膜係於氧化鋅中以氧化物之形式含有3B族元素者。 3B族元素之氧化物係固溶於氧化鋅中、或3B族元素氧化 物與氧化鋅分開混合存在、或該兩者共存。 藉由本發明之製造方法而形成之摻雜有3B族元素之氧化 辞薄膜的膜厚並無特別限制。例如可於⑽〜2_ nm之範 147876.doc -65- 201109279 圍内適當調整。氧化鋅薄膜之 塗佈用组人物”# 了猎由調整喷塗所用之 亦可八2/ 4、喷塗時間而適當調整。又,視需要 丌了刀2次以上進行噴塗操作。 鋅製造方法而形成之摻雜有3B族元素之氧化 更好^ 可見光具有_以上之平均透射率者, 古胃「對^可見光具有85%以上之平均透射率。再者,所 見光之平均透射率」,係以如下方式加以定義並 ^則疋。所謂對可見光之平均透射率,係指彻〜78〇⑽ ,之光線的透射率之平均,可藉由紫外可見分光光度 計而測定。 進而ϋ由本發明之製造方法而形成之推雜有π族元素 之,化辞薄膜較好的是表面電阻為1ΧΗ)5 Ω/□以下。更好 的疋表面電阻為5χ1〇4 Ω/口以下,尤其好的是表面電阻為 1χ1〇4 Ω/□以下。 於本&amp;明中可用作基板的例如可為透明基材膜,透明基 材膜可為塑膠膜。形成塑膠膜之聚合物可例示:聚醋(例 如聚對苯二甲酸乙二酯(PET)、聚萘二甲酸乙二酯 (PEN))、聚(甲基)丙烯酸酯(例如聚甲基丙烯酸甲酯 (二A))、聚碳酸醋(PC)、聚苯乙烯、聚乙烯醇、聚氣乙 烯丰偏—氯乙烯、聚乙烯、環狀聚烯烴(c〇p)、乙烯-乙 酸乙烯酯共聚物、聚胺基甲酸酯、三乙酸酯、賽璐凡。該 等中,較好的是PET、PC、PMMA。透明基材膜根據聚合 物之種類可為無延伸膜,亦可為延伸膜。例如,聚酿膜例 如PET膜通常為雙軸延伸膜,又,pc膜、三乙酸醋膜、賽 147876.doc -66 - 201109279 璐凡膜等通常為無延伸膜。 [實施例] 之說明,但本發The composition of the present invention is sprayed onto the surface of the substrate to form a oxidized film doped with a 3 lanthanum element. . The manufacturing method of the present invention uses a spray coating method. Or under pressure, under the so-called pressure of zinc oxide film, for example, pressure. However, it is not intended to be limited thereto. The spraying on the surface of the substrate is carried out in the presence of an oxygen source of atmospheric pressure, i.e., water. The case of the range of 101.3 to 202.6 kPa 147876.doc •63- 201109279 Actual: The nozzle of the method of I: can also be implemented under reduced pressure, but the effect is reduced, and the pressure is applied at atmospheric pressure. It is simple and therefore better. Back|Season is the so-called "spraying on the surface of the substrate...the environment in which water exists", for example, an aqueous air environment having a relative humidity of 20 to 90%. It can also be used in a mixed gas atmosphere in which nitrogen and water are mixed to replace the air. From the standpoint that the formation of the zinc oxide film is relatively stable, the relative humidity is preferably in the range of 30 to 70%. Spraying on the surface of the substrate can be carried out at a substrate temperature of 3 Torr or less. More specifically, it is preferable that the ambient temperature at which the spraying is performed is (10) or less and the substrate temperature is set to 3 G (rc or less.) The ambient temperature at which the zinc oxide film is formed is relatively stable from the viewpoint of smooth formation of the zinc oxide film. Preferably, the range of 1 〇 to 3 〇 ° C, the substrate temperature is preferably 10 to 20 〇 t, more preferably 20 〜 1 〇〇. (: the range. 疋 Figure 23 shows the present invention A spray film forming apparatus used, in which i denotes a spray bottle filled with a coating composition, 2 denotes a substrate holder, 3 denotes a spray nozzle, 4 denotes a compressor, and 5 denotes a substrate. It is disposed on the substrate holder 2, and is heated to a specific temperature of 300 ° C or lower by using a heater as needed, and then simultaneously supplied to the spray nozzle 3 disposed above the substrate in the atmosphere (at atmospheric pressure, in air). The compressed inert gas and the coating composition are sprayed by atomizing the coating composition, whereby an oxide film can be formed on the substrate. The zinc oxide film doped with the 3B group element is sprayed. It does not require additional heating or the like. The coating of the composition of the cloth can be used to produce a good transparency of the oxidation. 147876.doc -64 - 201109279 From the viewpoint of the film, it is preferred to apply the coating composition from the spray nozzle to the droplet size. The range of μΐη is ejected, and the distance between the spray nozzle and the substrate is set to be within 50 em. Further, from the viewpoint of the influence of heat on the substrate and the energy cost, it is preferable to carry out the ambient temperature of the spray. It is 4 〇t or less, and the temperature of the substrate is 3 〇〇 or less. 'If the adhesion to the substrate, the easiness of evaporation of the solvent, etc. are taken into consideration, the droplet size ejected from the spray nozzle is preferably All droplet sizes are in the range of 1~3〇μΓΠ. The droplet size is better in the range of 3~2 〇. 0 If the solvent is partially evaporated from the spray material until it reaches the substrate, the droplet size is reduced. Etc., it is preferred that the distance between the spray nozzle and the substrate is within 5 〇m. From the viewpoint of forming a zinc oxide film well, the distance between the spray nozzle and the substrate is preferably in the range of 2 to 40 cm. Furthermore, even if it is not on the substrate and the environment Heating is performed, and only the compressed inert gas and the coating composition are supplied from the spray nozzle 3 disposed above the substrate, and the coating composition is atomized and sprayed, or may be according to the strip # The size, the composition of the composition (concentration), the distance between the spray nozzle and the substrate, etc.) form a zinc oxide film doped with a group 3B element having high transparency on the substrate. #Doping formed by the manufacturing method of the present invention Oxidation of Group 3B elements. (4) Membrane is contained in zinc oxide in the form of oxides containing Group 3B elements. The oxides of Group 3B elements are solid-dissolved in zinc oxide, or the oxides of Group 3B elements are separated from zinc oxide. The film thickness of the oxidized film doped with the Group 3B element formed by the production method of the present invention is not particularly limited. For example, it can be adjusted within the range of (10)~2_ nm 147876.doc -65- 201109279. The coating group for the zinc oxide film is “#] The hunting can be adjusted by the adjustment of the spraying, and the spraying time can be appropriately adjusted. In addition, the knife is rubbed twice or more as needed to perform the spraying operation. The formed doping with the 3B group element is better oxidized. If the visible light has an average transmittance of _ or more, the ancient stomach "has an average transmittance of more than 85% for the visible light. Furthermore, the average transmittance of the light seen", It is defined as follows and then 疋. The average transmittance for visible light refers to the average of the transmittance of light of ~78〇(10), which can be measured by an ultraviolet-visible spectrophotometer. Further, the π-group element is formed by the production method of the present invention, and the surface resistance is preferably 1 ΧΗ) 5 Ω/□ or less. A better surface resistance is 5 χ 1 〇 4 Ω / port or less, and particularly preferably a surface resistance of 1 χ 1 〇 4 Ω / □ or less. For example, the substrate can be a transparent substrate film, and the transparent substrate film can be a plastic film. The polymer forming the plastic film can be exemplified by polyacetal (for example, polyethylene terephthalate (PET), polyethylene naphthalate (PEN)), poly (meth) acrylate (for example, polymethacrylic acid). Methyl ester (IIA)), polycarbonate (PC), polystyrene, polyvinyl alcohol, polyethylene ethylene, vinylidene chloride, polyethylene, cyclic polyolefin (c〇p), ethylene-vinyl acetate Copolymers, polyurethanes, triacetates, celecoxime. Among these, PET, PC, and PMMA are preferred. The transparent substrate film may be a non-stretched film or a stretched film depending on the kind of the polymer. For example, a polypropylene film such as a PET film is usually a biaxially stretched film, and a pc film, a triacetate film, and a 147876.doc-66 - 201109279 film are generally non-stretched films. [Examples], but the present invention

以下,藉由實施例對本發明進行更詳細 明並不限定於該等實施例。所有包含源白 下進行,溶劑係全部進行脫水及脫氣而使用。實施例卜 1〜1-4係第i態樣之實施例,實施例2_i〜2_8係第2態樣之實 施例,實施例3-1〜3-17係第3及4態樣之實施例,實施例4_ 〇 1〜4-6係第5態樣之實施例。 表面電阻值之測定方法 表面電阻係藉由依據JIS K 7 194之四探針法,使用三菱 化學製造之Loresta-GP進行測定。 [實施例1-1] 於四氫呋喃165.0 g中添加二乙基辞41.66 g。充分授掉 後,冷卻至-10t。將含有5_0%水之四氫呋喃溶液以水相 對於一乙基鋅之莫耳比成為0 · 6之方式進行滴加。然後, 〇 於室溫(22°C)下反應18小時後,將溶劑、未反應之二乙基 辞真空餾去而獲得包含部分水解物之產物33〇2 g。藉由 ' NMR(THF-d8,ppm)測定而獲得圖1之光错。藉由 . ICP(Inductively Coupled Plasma,感應麵合電漿_)測定,測 出鋅含有率為57.8%。辞基之產率為91%。 使以如上方式而得之包含部分水解物的產物僅以濃度成 為1 5%之量溶解於1,4-二哼烷後,將微量殘存之不溶物過 濾,藉此獲得包含部分水解物之含產物塗佈液。藉由烏式 147876.doc • 67- 201109279 黏度計(Ubbelohde viscometer)測定塗佈液之黏度,結果為 1.07 mPa.s。 將以如上方式而得之包含部分水解物的含產物塗佈液, 藉由旋塗法塗佈於l8mm見方之康寧(c〇rning) i 737玻璃基 板表面上。然後,藉由將基板K12(rc下加熱4分鐘而使溶 劑乾燥’同時形成氧化鋅。it而將以上操作重複i次。所 形成之薄膜的膜厚為0.25 μιη,如圖3所示般,藉由 XRD(X-ray diffraction,X射線繞射)確認為氧化鋅。又, 550 nm之可見光透射率為83%,可獲得透射率為8〇%以上 之透明氧化辞薄膜。 [實施例1-2] 於塗佈後,將基板於12(TC下加熱2分鐘而使溶劑乾燥, 進而於200°C下加熱2分鐘,除此以外,以與實施例丨^相 同之方式實施。所形成之薄膜的膜厚為〇 21 μηι ^ 55〇 nm 之可見光透射率為80%,可獲得透射率為8〇%以上之透明 氧化鋅薄膜。 [實施例1-3] 於四氫呋喃165.0 g中添加二乙基鋅4166 g。充分攪拌 後,冷卻至-HTC。將含有5.0%水之四氯咬喃溶液以水相 對於二乙基鋅之莫耳比成為0.8之方式進行滴加。然後, 於室溫下反應18小時後,將溶劑、未反應之二乙基鋅真空 餾去而獲得包含部分水解物之產物。藉*NMR(THF_d8 ,Hereinafter, the present invention will be more specifically described by way of examples without limitation to the examples. All sources are included in the white, and the solvent is all dehydrated and degassed. Embodiments 1 to 1-4 are examples of the i-th aspect, and examples 2_i to 2_8 are the second embodiment, and the examples 3-1 to 3-17 are the third and fourth embodiments. Example 4_ 〇1 to 4-6 are examples of the fifth aspect. Method for Measuring Surface Resistance Value The surface resistance was measured by using a Loresta-GP manufactured by Mitsubishi Chemical in accordance with the probe method of JIS K 7 194. [Example 1-1] To a solution of 165.0 g of tetrahydrofuran, diethyl group 41.66 g was added. After fully approving, cool to -10t. The tetrahydrofuran solution containing 5_0% of water was added dropwise in such a manner that the molar ratio of the aqueous phase to monoethylzinc was 0.6. Then, after reacting at room temperature (22 ° C) for 18 hours, the solvent and unreacted diethyl ether were distilled off in vacuo to obtain 33 〇 2 g of a product containing a partial hydrolyzate. The optical error of Fig. 1 was obtained by 'NMR (THF-d8, ppm) measurement. The zinc content was determined to be 57.8% as measured by ICP (Inductively Coupled Plasma). The yield of the radical is 91%. The product containing the partial hydrolyzate obtained as described above is dissolved in 1,4-dioxane only in an amount of 15% by weight, and a trace amount of the insoluble matter is filtered, thereby obtaining a portion containing the hydrolyzate. Product coating solution. The viscosity of the coating liquid was measured by a Ukbel 147876.doc • 67-201109279 viscometer (Ubbelohde viscometer) and found to be 1.07 mPa.s. The product-containing coating liquid containing the partial hydrolyzate obtained in the above manner was applied by spin coating on the surface of a l8 mm square Corning i 737 glass substrate. Then, the above operation was repeated i times by forming the substrate K12 (heating the solvent under rc for 4 minutes while forming zinc oxide.) The formed film had a film thickness of 0.25 μm, as shown in FIG. It was confirmed to be zinc oxide by XRD (X-ray diffraction), and the visible light transmittance at 550 nm was 83%, and a transparent oxide film having a transmittance of 8 % by or more was obtained. -2] After coating, the substrate was heated in the same manner as in Example 1 except that the substrate was heated at 12 ° C for 2 minutes to dry the solvent and further heated at 200 ° C for 2 minutes. The film thickness of the film is 80% of visible light transmittance of 〇21 μηι ^ 55 〇nm, and a transparent zinc oxide film having a transmittance of 8 〇% or more is obtained. [Example 1-3] Two hexanhydrofuran 165.0 g was added. 4166 g of ethyl zinc. After thorough stirring, it was cooled to -HTC. The tetrachlorocarbamate solution containing 5.0% water was added dropwise in such a manner that the molar ratio of water to diethylzinc was 0.8. Then, in the room After reacting for 18 hours at a temperature, the solvent and unreacted diethyl zinc were vacuum distilled off to obtain a package. a product containing a partial hydrolyzate. By *NMR (THF_d8,

Ppm)測定而獲得圖2之光譜。藉由ICP測定,測出辞含有率 為57.3%。鋅基之產率為90%。 147876.doc -68- 201109279 使以如上方式而得之包含部分水解物的產物僅以濃度成 為12%之量溶解於丨,4_二嘮烷後,將微量殘存之不溶物過 濾,藉此獲得包含部分水解物之含產物塗佈液。藉由烏式 黏度計測定塗佈液之黏度,結果為117 mPa,s。 ΟPpm) was measured to obtain the spectrum of Figure 2. The content of the word was determined to be 57.3% by ICP measurement. The yield of the zinc base is 90%. 147876.doc -68- 201109279 The product containing the partial hydrolyzate obtained in the above manner is dissolved in ruthenium and 4-dioxane in an amount of only 12%, and a small amount of residual insoluble matter is filtered, thereby obtaining A product-containing coating liquid containing a partial hydrolyzate. The viscosity of the coating liquid was measured by a Ubum viscometer and found to be 117 mPa, s. Ο

將以如上方式而得之包含部分水解物的含產物塗佈液, 藉由旋塗法塗佈於18 mm見方之康寧1737玻璃基板表面 上。然後,藉由將基板於12(rc下加熱4分鐘而使溶劑乾 燥,同時形成氧化鋅。進而將以上操作重複丨次。所形成 之薄膜的膜厚為〇·27 μιη ’如圖5所示般,藉由XRD確認為 氧化辞。又,550 nm之可見光透射率為81%,可獲得透射 率為80°/。以上之透明氧化鋅薄膜。 [實施例1-4] 於堃佈後,將基板於12〇t下加熱2分鐘而使溶劑乾燥, 進而於2GG°C下加熱2分鐘,除此以外,以與實施例1-3相 同之方式實施。所形成之薄膜的膜厚為〇23陶,如圖6所 550 nm之可見光透射 之透明氧化鋅薄膜。 示般’藉由XRD確認為氧化鋅。又, 率為95%,可獲得透射率為80%以上 [參考例1-1] 於四氫呋喃165.0 g中添加二乙基辞4166 g。充分攪拌 後’冷卻至·ΐη:。將含有通水之四氫。夫喃溶液以水相 對於二乙基鋅之莫耳比成為丨‘…之方式進行滴加。然後, 於至溫下反應18小時,結果產生大量凝膠,所產生之凝膠 不溶於任何有機溶劑,因此無法製備塗佈液。 [比較例1-1] 147876.doc -69- 201109279 於2-曱氧基乙酵48.24 g中添加乙酸鋅二水合物8.50 g、 以及作為助劑之乙醇胺2.39 g,進行充分攪拌,藉此獲得 塗佈液。 除了使用以如上方式而得之塗佈液以外’實施與實施例 1-1相同之操作而獲得薄膜。550 nm之可見光透射率為 27% ’僅可獲得透射率為80%以下之不透明薄膜。進而, 膜不均勻,藉由XRD未確認到源自氧化辞之波峰(未圖 示)。 [比較例1-2] 於塗佈後,將基板於12〇。(:下加熱2分鐘而使溶劑乾燥, 進而於2001:下加熱2分鐘,除此以外,實施與比較例j 】 相同之操作。550 nm之可見光透射率為31%,僅可獲得透 射率為8〇%以下之不透明薄膜。進而,膜不均勻,藉由 XRD未確認到源自氧化鋅之波峰(未圖示)。 [實施例2-1] 於 1,4-二啰烷 30_0 g 中添 7 ^ Ω1 &gt;、 st艰加一乙基鋅丨9丨g。充分搜拌 後,冷卻至12°C。將含有5 0%士 # τ ^ ^ 3令).υ/〇水之丨,4-二气烷溶液以水相 對於二乙基辞之莫耳比成為〇 取两υ.ί&gt;之方式進仃滴加。然後, 升溫至室溫(22。〇錢室溫下反應18小時後,以相對於所 投入之二乙基鋅而以莫耳比計成為0.G2之方式添加三乙基 銘。將以如上方式而得之、、突+ /合液以薄膜過濾器進行過濾, 此獲得含有鋁之部分水解铷、.六、六,、曲^ 鮮物/合液(》辰度5_6質量%)32.1 g。 藉由利用真空乾燥將溶劑耸 d寻去除後之NMR(丁HF_d8, 測定而獲得圖8之光譜。 ’ 147876.doc -70. 201109279 將以如上方式而得之包含部分水解物的含產物塗佈液, 藉由旋塗法塗佈於18mm見方之康寧1737玻璃基板表面 然後藉Φ將基板於UO C下加熱4分鐘而使溶劑乾 ',同時形成氧化辞。進而將以上操作重複2次。所形成 之薄膜的膜厚為0.15 μιη,如圖9所示般,藉由獅確認為 . 氧化鋅。又’ 550 nm之可見光透射率為87%,可獲得透射 率為80%以上之透明氧化鋅薄膜。 [實施例2-2] 〇 &amp; 了將三乙基鋁變更為三甲基鎵以外,以與實施例2」 相同之方式獲知含有嫁之部分水解物溶液(濃度5.5質量 %)31.5 g。藉由利用真空乾燥將溶劑等去除後之 NMR(THF-d8,ppm)測定而獲得圖1〇之光譜。 以與實施例2-1相同之方式塗佈以如上方式而得之包含 部分水解物的含產物塗佈液。所形成之薄膜的膜厚為〇.i4 μιη,如圖11所示般,藉由XRD確認為氧化辞。又,55〇打瓜 之可見光透射率為84%,可獲得透射率為8〇%以上之透明 〇 氧化鋅薄膜。 [實施例2-3] 除了將三乙基鋁變更為三甲基銦以外,以與實施例 相同之方式獲得含有銦之部分水解物溶液(濃度55質量 °/〇)32.3 g。藉由利用真空乾燥將溶劑等去除後之 NMR(THF-d8,ppm)測定而獲得圖12之光譜。 除了將基板加熱溫度變更為15〇°c以外,以與實施例2_ 1 相同之方式,塗佈以如上方式而得之包含部分水解物的含 147876.doc 201109279 產物塗佈液。所形成之薄膜的膜厚為0丨4 μη1,如圖i 3所 示般,藉由XRD確認為氧化鋅。又,wo nm之可見光透射 率為89% ’可獲得透射率為8〇%以上之透明氧化鋅薄膜。 [比較例2-1 ] 於2_甲氧基乙醇24.12 g中添加乙酸鋅二水合物123 g以 及作為助劑之乙醇胺0.34 g,進而相對於乙酸鋅二水合物 而以莫耳比0.02之比例添加三乙醯丙酮鋁,並充分授拌, 藉此獲得含有鋁之塗佈液。 除了於空氣中使用以如上方式而得之塗佈液以外,實施 nm之可見光透 與實施例2-1相同之操作而獲得薄膜。55〇 射率為75%,僅可獲得透射率為8〇%以下之不透明薄膜。 進而,膜不均勻,藉由XRD未確認到源自氧化鋅之波峰 (未圖示)。 [比較例2-2] 除了將三乙醯丙酮鋁變更為氯化鎵以外,以與比較例i 相同之方式獲得含有鎵之塗佈液。 對以如上方式而得之塗佈液實施與比較例1相同之操作 而獲得薄膜。又,5 5 0 nm之可見光透射率為66%,僅可獲The product-containing coating liquid containing the partial hydrolyzate obtained in the above manner was applied onto the surface of a Corning 1737 glass substrate of 18 mm square by spin coating. Then, the substrate was dried by heating the substrate at 12 rc for 4 minutes to form zinc oxide. The above operation was repeated one time. The film thickness of the formed film was 〇·27 μιη' as shown in FIG. In general, it is confirmed by XRD to be an oxidized word. Further, the visible light transmittance at 550 nm is 81%, and a transparent zinc oxide film having a transmittance of 80°/. or more is obtained. [Example 1-4] The film was formed in the same manner as in Example 1-3 except that the substrate was heated at 12 ° C for 2 minutes to dry the solvent and further heated at 2 GG ° C for 2 minutes. 23 pottery, as shown in Fig. 6, is a transparent zinc oxide film of 550 nm visible light transmission. It is confirmed to be zinc oxide by XRD. Further, the rate is 95%, and the transmittance is 80% or more [Reference Example 1-1] Adding 4166 g of diethyl ether to 165.0 g of tetrahydrofuran. After thorough stirring, 'cooling to · ΐ η: will contain tetrahydrogen in water. The solution of water is compared with the molar ratio of water to diethyl zinc. In the manner of ..., the reaction was carried out, and then, the reaction was carried out for 18 hours at a temperature, and a large amount of gel was produced. The resulting gel was insoluble in any organic solvent, so that a coating liquid could not be prepared. [Comparative Example 1-1] 147876.doc -69- 201109279 Zinc acetate dihydrate 8.50 g was added to 2-methoxyacetate 48.24 g. And 2.39 g of ethanolamine as an auxiliary agent, and the mixture was sufficiently stirred to obtain a coating liquid. A film was obtained by the same operation as in Example 1-1 except that the coating liquid obtained in the above manner was used. The visible light transmittance was 27%. Only an opaque film having a transmittance of 80% or less was obtained. Further, the film was not uniform, and a peak derived from an oxidation word (not shown) was not confirmed by XRD. [Comparative Example 1-2 After the application, the substrate was subjected to the same operation as in Comparative Example j except that the substrate was heated at 2 Torr for 2 minutes to dry the solvent, and further heated at 2001: for 2 minutes. The transmittance was 31%, and only an opaque film having a transmittance of 8% by mass or less was obtained. Further, the film was uneven, and a peak derived from zinc oxide (not shown) was not confirmed by XRD. [Example 2-1] Add 7 ^ Ω1 &gt; in 1,4-dioxane 30_0 g, st hard One ethyl zinc lanthanum 9 丨 g. After thorough mixing, cool to 12 ° C. Will contain 50% ± # τ ^ ^ 3 order). υ / 〇 water 丨, 4- di-halane solution relative to water In the case of diethyl ether, the molar ratio is obtained by taking two υ. ί&gt; and then adding it to the room temperature (22. After the reaction at room temperature for 18 hours, the relative amount is Ethylzinc was added to add triethylamine in a molar ratio of 0.G2. The membrane was filtered in the above manner, and the mixture was filtered through a membrane filter to obtain a partially hydrolyzed cerium containing aluminum. , six, six, and song ^ fresh / liquid ("Chen degree 5_6 mass%) 32.1 g. The spectrum of Fig. 8 was obtained by NMR (but HF_d8, measured by vacuum drying) by vacuum drying. '147876.doc -70. 201109279 The product containing the partial hydrolyzate obtained in the above manner was coated. The solution was applied to the surface of a Corning 1737 glass substrate of 18 mm square by spin coating, and then the substrate was heated at UO C for 4 minutes by Φ to dry the solvent, and an oxidation term was formed. The above operation was repeated twice. The film formed has a film thickness of 0.15 μm, as shown in Fig. 9, which is confirmed by the lion as zinc oxide, and a visible light transmittance of 87% at 550 nm, and a transparent zinc oxide having a transmittance of 80% or more is obtained. [Example 2-2] A solution containing a partially hydrolyzed solution (concentration: 5.5% by mass) 31.5 was obtained in the same manner as in Example 2 except that triethylaluminum was changed to trimethylgallium. g. The spectrum of Fig. 1A was obtained by measuring NMR (THF-d8, ppm) after removal of a solvent or the like by vacuum drying. The coating portion obtained in the above manner was applied in the same manner as in Example 2-1. a product-containing coating liquid of a hydrolyzate. The thickness is 〇.i4 μιη, as shown in Fig. 11, it is confirmed by XRD as an oxidation word. In addition, the visible light transmittance of 55 〇 melon is 84%, and a transparent bismuth zinc oxide having a transmittance of 8 〇% or more can be obtained. [Example 2-3] A solution of a partial hydrolyzate containing indium (concentration: 55 mass/〇) was obtained in the same manner as in the Example except that triethylaluminum was changed to trimethylindium. The spectrum of Fig. 12 was obtained by measuring NMR (THF-d8, ppm) after removal of a solvent or the like by vacuum drying. The coating was applied in the same manner as in Example 2-1 except that the substrate heating temperature was changed to 15 °C. The film was coated with a 147876.doc 201109279 product containing a partial hydrolyzate as described above. The formed film had a film thickness of 0丨4 μη1, which was confirmed to be zinc oxide by XRD as shown in FIG. Moreover, the visible light transmittance of wo nm is 89%', and a transparent zinc oxide film having a transmittance of 8〇% or more can be obtained. [Comparative Example 2-1] Zinc acetate dihydrate is added to 2_methoxyethanol 24.12 g. 123 g and 0.34 g of ethanolamine as an auxiliary, and thus relative to zinc acetate dihydrate Adding aluminum triacetate azide in a ratio of molar ratio of 0.02, and sufficiently mixing, thereby obtaining a coating liquid containing aluminum. In addition to using the coating liquid obtained in the above manner in air, the visible light transmittance of nm is performed. A film was obtained in the same manner as in Example 2-1, and the radiance of the film was 75%, and only an opaque film having a transmittance of 8 % by or less was obtained. Further, the film was uneven, and zinc oxide was not confirmed to be derived from zinc oxide by XRD. The peak (not shown). [Comparative Example 2-2] A coating liquid containing gallium was obtained in the same manner as in Comparative Example i except that aluminum triacetate was changed to gallium chloride. The same operation as in Comparative Example 1 was carried out on the coating liquid obtained in the above manner to obtain a film. Moreover, the visible light transmittance of 550 nm is 66%, only available

[比較例2-3] 四水合物以外,以盘 除了將三乙醯丙酮鋁變更為氣化銦四 比較例1相同之操作 比較例1相同之方式獲得含有銦之塗佈液 對以如上方式而得之塗佈液實施與比 147876.doc -72- 201109279 而獲得薄膜。又,550 nm之可見光透射率為71 %,僅可獲 得透射率為80%以下之不透明薄膜。進而,膜不均勻,藉 由XRD未確認到源自氧化鋅之波峰(未圖示)。 [實施例2-4] 於雙(2-甲氧基乙基)醚3〇.〇 g中添加二乙基鋅2.62 g。充 分授拌後’冷卻至-12。(:。將含有5.0%水之四氫呋畴溶液 以水相對於一乙基辞之莫耳比成為〇 6之方式進行滴加。 然後,升溫至室溫(22。〇並於室溫下反應18小時。將以如 〇 上方式而得之溶液以薄膜過濾器進行過濾,藉此獲得部分 水解物溶液(濃度7.8質量%)33·1 g。藉由利用真空乾燥將 溶劑等去除後之NMR(THF-d8,ppm)測定而獲得圖14之光 譜。[Comparative Example 2-3] A coating liquid solution containing indium was obtained in the same manner as in Comparative Example 1 except that the aluminum triethyl sulfonate aluminum was changed to the indium sulfide fourth comparative example 1 except for the tetrahydrate. The resulting coating liquid was obtained by a ratio of 147876.doc -72 to 201109279 to obtain a film. Further, the visible light transmittance at 550 nm was 71%, and only an opaque film having a transmittance of 80% or less was obtained. Further, the film was not uniform, and a peak derived from zinc oxide (not shown) was not confirmed by XRD. [Example 2-4] 2.62 g of diethyl zinc was added to bis(2-methoxyethyl)ether 3 〇.〇 g. After fully mixing, 'cool down to -12. (: The tetrahydrofuran domain solution containing 5.0% water was added dropwise in such a manner that water was compared with the monoethyl molar ratio of hexamethylene. Then, the temperature was raised to room temperature (22. 〇 and at room temperature) The reaction was carried out for 18 hours, and the solution obtained by the method of ruthenium was filtered through a membrane filter to obtain a partial hydrolyzate solution (concentration: 7.8% by mass) of 33·1 g. The solvent was removed by vacuum drying. The spectrum of Fig. 14 was obtained by NMR (THF-d8, ppm).

將以如上方式而得之包含部分水解物的含產物塗佈液, 藉由旋塗法塗佈於18 mm見方之康寧1737玻璃基板表面 上。然後,藉由將基板於12〇。(:下加熱4分鐘而使溶劑乾 燥,同時形成氧化鋅。進而將以上操作重複5次。所形成 之薄膜的臈厚為0·36 μηι,藉由XRD確認為氧化鋅。又, 550 nm之可見光透射率為93%,可獲得透射率為_以上 之透明氧化辞薄膜。 [實施例2-5] 於實施例2-4中所製備之二乙基鋅之部分水解物溶液 中,以相對於所投入之二乙基辞而以莫耳比計成為〇〇ι之 方式添加三辛基紹’藉此獲得含有銦之部分水解物溶液 33.2 g。 147876.doc -73- 201109279 將以如上方式而得之包含部分水解物的含產物塗佈液, 藉由奴塗法塗佈於18 mm見方之康寧1737玻璃基板表面 上。然後,藉由將基板M12(rc下加熱4分鐘而使溶劑乾 燥’同時形成氧化辞。$而將以上操作重複5次。所形成 之薄膜的膜厚為〇.33 μιη ’藉由XRD確認為氧化辞。又, 550 之可見光透射率為93%,可獲得透射率為80%以上 之透明氧化辞薄膜。 [實施例2-6] 於實施例2 - 4中戶斤製備t二乙基辞之部分水解物溶液 中’以相對於所投人之二乙基辞而以莫耳比計成為⑽之 方式&quot;“ 口—甲基鎵’藉此獲得含有銦之部分水解物溶液 33.0 g。 將以如上方式而得之包含部分水解物的含產物塗佈液, 藉由旋塗法塗佈於18 mm見方之康寧1737玻璃基板表面 上。然後,藉由將基板於丨机下加熱4分鐘而使溶劑乾 燥1時形成氧化鋅。進而將以上操作重複5次。所形成 之薄膜的膜厚為G.35 μ„ι ’藉由XRD確認為氧化辞。又, 別之可見光透射率為94%,可獲得透射率為峨以上 之透明氧化辞薄膜。 [實施例2-7] 於實施例2-4中所製備之二乙基辞之部分水解物溶液 中,以相於所投人之:乙基辞而以莫耳 方式添加三甲基銦,藉此獲得含有銦之部分水解物= 32.8 g。 147876.doc -74· 201109279 將以如上方式而得之包含部分水解物的含產物塗佈液, 藉由旋塗法塗佈於18 mm見方之康寧1737玻璃基板表面 上。然後,藉由將基板於12(rc下加熱4分鐘而使溶劑乾 燥,同時形成氧化辞。進而將以上操作重複5次。所形成 之薄膜的膜厚為0.32 μιη,藉由XRD確認為氧化鋅。又, 550 nm之可見光透射率為94%,可獲得透射率為8〇%以上 之透明氧化鋅薄膜。 [實施例2-8] ◎ 於丨,2_二乙氧基乙烷3〇.〇 g中添加二乙基辞1.97 g。充分 攪拌後,冷卻至-12。(:。使用如圖15之裝置間歇地導入含 有5.0%水之四氫呋喃溶液,藉此以水相對於二乙基鋅之莫 耳比成為0_8之方式進行滴加.然後,升温至室溫(22。〇並 於室溫下反應18小時。將以如上方式而得之溶液以薄膜過 濾器進行過濾,藉此獲得部分水解物溶液(濃度7.8質量〇/〇) 3 3 · 1 g。藉由利用真空乾燥將溶劑等去除後之 d8 ’ ppm)測定而獲得圖16之光譜。 〇 [實施例3-1] 於1,2-二乙氧基乙烷(沸點12rc)39 9 §中添加二乙基辞 3.49 g(相當於8.7質量%)。充分攪拌後,冷卻至—^艺。將 含有5.0%水之1,4_二,号烷(沸點1〇1丨。(:)溶液以水相對於二 乙基辞之莫耳比成為0.6之方式進行滴加(添加總量:6〇2 g)。然後,升溫至室溫(24。〇並於室溫下反應18小時,以 薄膜過濾器進行過濾’藉此獲得部分水解物溶液(濃度6.5 質量°/〇)48.1 g。藉由利用真空乾燥將溶劑等去除後之 147876.doc •75- 201109279 NMR(THF-d8 ’ ppm)測定而獲得圖15之光譜。 將以如上方式而得之包含部分水解物的含產物塗佈液, 藉由旋塗法塗佈於18 mm見方之康寧1737玻璃基板表面 上。然後,藉由將基板於500。(:下加熱4分鐘而使溶劑乾 燥,同時形成氧化鋅。進而將以上操作重複5次。所形成 之薄膜的表面電阻為1300 Ω/□、膜厚為〇 35 μιη、體積電 阻率為4.6ΧΗ)·2 Q.em。進而’藉由XRD(參照圖16)確認為 氧化鋅。又,550 nm之可見光透射率為9〇%,可獲得透射 率為80%以上之透明氧化鋅薄膜。 [實施例3-2] 於實施例3-1中所製備之二乙基鋅的部分水解物溶液 中,以相對於所投入之二乙基鋅而以莫耳比計成為㈣之 方式添加三甲基銦,藉此而獲得含有姻之部分水解物溶液 488.1 g ° 將以如上方式而得之包含部分水解物的含產物塗佈液, 藉由旋塗法塗佈於18 mm見方之康寧1737玻璃基板表面 上。然後,藉由將基板於別代下加熱4分鐘而使溶劑乾 燥,同時形成氧化鋅。進而將以上操作重複5次。所形成 之薄膜的表面電阻為587 Ω/口、膜厚為0.37 _、體積電阻 率為2.2Χ10-2〜cm。進而,藉由勘確認為氧化辞。又, 別⑽之可見光透射率為91%,可獲得透射率為8〇%以上 之透明氧化鋅薄膜。 [實施例3-3] 將如實施例3销所得之包含部分水解物的含產物塗佈 147876.doc -76- 201109279 液,藉由旋塗法塗佈於18職見方之康寧i737玻璃基板表 面上然後’錯由將基板於500&lt;t下加熱4分鐘而使溶劑乾 燥丄同時形成氧化鋅。進而將以上操作重複3G次。所形成 之:專膜的表面電阻為55 Ω/□、膜厚為i7i叫、體積電阻 率為9,4χ10·3 Ω,。進而,藉由咖確認為氧化鋅。又, 550 nm之可見光透射率為咖,可獲得透射率為祕以上 之透明氧化鋅薄膜。 [實施例3-4]The product-containing coating liquid containing the partial hydrolyzate obtained in the above manner was applied onto the surface of a Corning 1737 glass substrate of 18 mm square by spin coating. Then, by placing the substrate at 12 Torr. (: heating was carried out for 4 minutes to dry the solvent, and zinc oxide was formed at the same time. The above operation was repeated 5 times. The thickness of the formed film was 0·36 μηι, which was confirmed to be zinc oxide by XRD. Further, 550 nm The visible light transmittance was 93%, and a transparent oxidized film having a transmittance of _ or more was obtained. [Example 2-5] In the partial hydrolyzate solution of diethylzinc prepared in Example 2-4, Adding trioctylsole in the manner of the molar ratio of the ethylene added to the molar ratio of the mixture, thereby obtaining a partial hydrolyzate solution containing indium 33.2 g. 147876.doc -73- 201109279 will be as above The product-containing coating liquid containing a part of the hydrolyzate was coated on the surface of a Corning 1737 glass substrate of 18 mm square by a slave coating method, and then the solvent was dried by heating the substrate M12 (rc for 4 minutes). 'The oxidation operation was simultaneously formed. The above operation was repeated 5 times. The film thickness of the formed film was 〇.33 μιη', which was confirmed to be an oxidation word by XRD. Further, the visible light transmittance of 550 was 93%, and transmission was obtained. A transparent oxide film with a rate of 80% or more. Example 2-6] In the example 2 - 4, in the partial hydrolyzate solution of the t-diethyl group, the method of "10" in terms of molar ratio with respect to the diethyl of the person to be cast is &quot; "Mouth-methylgallium" thereby obtaining a solution of a partial hydrolyzate containing indium 33.0 g. The product-containing coating liquid containing the partial hydrolyzate obtained in the above manner was applied by spin coating to 18 mm square. On the surface of Corning 1737 glass substrate. Then, zinc oxide was formed by drying the substrate under a downdraft for 4 minutes to form a zinc oxide. The above operation was repeated 5 times. The film thickness of the formed film was G.35 μ. „ι' was confirmed to be an oxidized word by XRD. Further, the visible light transmittance was 94%, and a transparent oxidized film having a transmittance of 峨 or more was obtained. [Example 2-7] In Example 2-4 In the prepared partial hydrolyzate solution of the diethyl group, trimethylindium was added in a molar manner in the form of an ethyl group, thereby obtaining a partial hydrolyzate containing indium = 32.8 g. Doc -74· 201109279 The product-containing coating liquid containing a partial hydrolyzate obtained in the above manner, It was applied by spin coating on the surface of a Corning 1737 glass substrate of 18 mm square. Then, the solvent was dried by heating the substrate at 12 (rc for 4 minutes), and an oxidation term was formed. The above operation was repeated 5 times. The thickness of the formed film was 0.32 μm, which was confirmed to be zinc oxide by XRD, and the visible light transmittance at 550 nm was 94%, and a transparent zinc oxide film having a transmittance of 8 % by or more was obtained. -8] ◎ Indole, 2_diethoxyethane 3〇.〇g was added with diethyl 1.97 g. After stirring well, cool to -12. (: A solution of 5.0% water in tetrahydrofuran was intermittently introduced using the apparatus shown in Fig. 15, whereby the molar ratio of water to diethylzinc was 0 to 8. The temperature was raised to room temperature (22). The mixture was reacted at room temperature for 18 hours, and the solution obtained as above was filtered through a membrane filter, thereby obtaining a partial hydrolyzate solution (concentration: 7.8 mass 〇/〇) 3 3 · 1 g. The spectrum of Fig. 16 was obtained by vacuum drying after d8 'ppm) after removing the solvent, etc. 〇 [Example 3-1] Adding diethyl 2 to 1,2-diethoxyethane (boiling point 12 rc) 39 9 § Base letter 3.49 g (corresponding to 8.7% by mass). After thorough stirring, cool to -^ art. Will contain 5.0% water of 1,4_di, alkane (boiling point 1〇1丨. (:) solution relative to water The addition was carried out by adding dropwise (the total amount: 6 〇 2 g) to the molar ratio of ethylene to 0.6. Then, the temperature was raised to room temperature (24 〇 and reacted at room temperature for 18 hours to obtain a membrane filter). Filtration was carried out to thereby obtain a partial hydrolyzate solution (concentration 6.5 mass ° / 〇) 48.1 g. The solvent was removed by vacuum drying. 147876.doc • 75- 201109279 NMR (THF-d8 'ppm) measurement to obtain the spectrum of Fig. 15. The product-containing coating liquid containing the partial hydrolyzate obtained in the above manner was coated by spin coating. On the surface of Corning 1737 glass substrate of 18 mm square, the solvent was dried by heating the substrate at 500 ° for 4 minutes, and zinc oxide was formed at the same time. The above operation was repeated 5 times. The surface resistance was 1300 Ω/□, the film thickness was 〇35 μm, and the volume resistivity was 4.6 ΧΗ)·2 Q.em. Further, it was confirmed to be zinc oxide by XRD (refer to Fig. 16). Further, visible light transmission at 550 nm The rate was 9% by mass, and a transparent zinc oxide film having a transmittance of 80% or more was obtained. [Example 3-2] In the partial hydrolyzate solution of diethylzinc prepared in Example 3-1, Adding trimethylindium in the form of (4) in terms of molar ratio to the diethylzinc charged, thereby obtaining a partial hydrolyzate solution containing 488.1 g of the solution containing the partial hydrolyzate as described above. Coating solution containing product, coated by spin coating on 18 mm square Corning 1737 On the surface of the glass substrate, the solvent was then dried by heating the substrate for 4 minutes, and zinc oxide was formed at the same time. The above operation was repeated 5 times. The surface resistance of the formed film was 587 Ω/□, film. The thickness is 0.37 _, and the volume resistivity is 2.2 Χ 10-2 〜 cm. Further, it is confirmed to be an oxidized word by investigation. Further, the visible light transmittance of (10) is 91%, and transparent oxidation having a transmittance of 8 〇 % or more can be obtained. Zinc film. [Example 3-3] A product containing a partial hydrolyzate obtained as a pin of Example 3 was coated with a solution of 147876.doc -76-201109279, which was applied by spin coating to Corning i737 of 18th position. On the surface of the glass substrate, then the substrate was heated at 500 ° t for 4 minutes to dry the solvent while forming zinc oxide. The above operation was repeated 3G times. The surface resistance of the film is 55 Ω/□, the film thickness is i7i, and the volume resistivity is 9,4χ10·3 Ω. Further, it was confirmed to be zinc oxide by coffee. Further, the visible light transmittance at 550 nm is a transparent zinc oxide film having a transmittance higher than that. [Example 3-4]

於1’2-二乙氧基乙燒(沸點12Γ〇扇3 §中添加二乙基辞 二5 g(相當於8.7f量%)。充分攪拌後冷卻至饥。 將含有5舰水之四氫咬味(彿點崎)溶液以水相對於二乙 基鋅之莫耳比成為〇.6之方式進行滴加(添加總量:30·1 幻然後,升溫至室溫(24t)並於室溫下反應以小時以 薄J過濾器進行過濾,藉此獲得部分水解物溶液(濃度6.4 質里。)245.2 g。於该部分水解物溶液中,以相對於所投入 之二乙基辞㈣莫耳比計成狀Q1之方式添加三f基姻, 藉此而獲得含有銦之部分水解物溶液245.3 g。 將以如上方式而得之塗佈液填充至圖14之噴霧製膜裝置 中之T霧瓶内。將18 mm見方之康寧1737玻璃基板設置於 广板口持@上。於氮氣環境下,將玻璃基板加熱至40(TC 後二利用水蒸氣導入用管6,將對抑之水以每分鐘Μ L 進仃起泡的氮氣導入至基板附近,藉此導入水。然後,自 喷霧嘴,將塗佈液以4 ml/min噴霧16分鐘。自噴霧嘴喷出 之液滴大小為3〜20 μπι之範圍,且將噴霧嘴與基板之距離 147876.doc •77· 201109279 設為3〇⑽而進行。所形成之薄膜的表面電阻為15Ω/口、 膜厚為0.49 、體積雷阳变 ®槓電阻率為7.4χ1〇-4〜咖。 由XRD(參照圖17)確認為氧化鋅q a Μ Μ Α δ·3〇/ 550 nm之可見光透 射车為83% ’可獲得透射 膜。 半為8〇/°以上之透明氧化辞薄 [實施例3-5] 禮5忍了貫施例3-1〜3-4 Φ晰π々与 4中所侍之氧化鋅薄臈具有抗靜電 功月^而可用作抗靜電薄膜。進而,確認了實施例^〜^Add 1 2 - diethoxyethane (boiling point 12 Γ〇 fan 3 § to add diethyl 5 g (equivalent to 8.7 f%). Stir well and cool to hunger. Will contain 5 ships of water The hydrogen bite (Buddha) solution was added dropwise in such a manner that the molar ratio of water to diethylzinc was 〇.6 (addition amount: 30·1 phantom, then warmed to room temperature (24t) and The reaction was filtered at room temperature with a thin J filter for one hour, thereby obtaining a partial hydrolyzate solution (concentration 6.4 mass.) 245.2 g. In the partial hydrolyzate solution, in relation to the input diethyl ether (four) The molar ratio is added to the form of Q1 to add a triff group, thereby obtaining 245.3 g of a partial hydrolyzate solution containing indium. The coating liquid obtained in the above manner is filled into the spray film forming apparatus of FIG. In the T-fog bottle, place the 18 mm square Corning 1737 glass substrate on the wide plate holder @. In a nitrogen atmosphere, heat the glass substrate to 40 (the second use of the water vapor introduction tube 6 after the TC) Water is introduced into the vicinity of the substrate at a rate of Μ L per minute into the substrate, thereby introducing water. Then, from the spray nozzle, the coating liquid is Spray at 4 ml/min for 16 minutes. The droplet size from the spray nozzle is in the range of 3~20 μπι, and the distance between the spray nozzle and the substrate is 147876.doc •77· 201109279 is set to 3〇(10). The surface resistance of the film is 15 Ω/□, the film thickness is 0.49, and the volume resistivity is 7.4χ1〇-4~coffee. It is confirmed by XRD (refer to Fig. 17) as zinc oxide qa Μ Μ Α δ·3 〇 / 550 nm visible light transmission vehicle is 83% 'a transmission film is available. Half a transparent oxidized thinning of 8 〇 / ° [Example 3-5] Gift 5 endures the application 3-1 ~ 3-4 Φ 々 々 々 々 氧化 氧化 氧化 氧化 氧化 氧化 氧化 氧化 氧化 臈 臈 臈 臈 臈 臈 臈 臈 臈 臈 氧化 臈 氧化 氧化 氧化 氧化 氧化 氧化 氧化 氧化 氧化 氧化

4中所仵之虱化鋅薄膜具有紫外線截斷功能,而可 外線截斷薄膜。 IThe zinc telluride film deposited in 4 has an ultraviolet cut-off function, and the film can be cut off by an external line. I

[實施例3-6] 確s忍了貫施例3_4中戶斤媒夕备&amp; 〒所仔之乳化辞薄膜形成為透明電 極,而確認其可用作透明導電薄膜。 [參考例3-1] 於1,2-二乙氧基乙烧4〇 〇 g中添加二乙基辞】% g(相當 於3.15質量%)。充分授拌後’冷卻至]η:。將含有5.0% 水之容液以水相對於二乙基辞之莫耳比成為〇6 之方式進行滴加(添加總量:2_〇6 g)。然後,升溫至室溫 =4 C)亚於室溫下反應18小時,以薄膜過渡器進行過滤, 藉此獲得部分水解物溶液(濃度2 7質量%)43丨呂。 將以如上方式而得之包含部分水解物的含產物塗佈液, 藉由旋塗法塗佈於18 mm見方之康寧1737玻璃基板表面 上。然後,藉由將基板於50(TC下加熱4分鐘而使溶劑乾 燥。進而將以上操作重複5次。然而,所形成之薄膜的表 147876.doc -78· 201109279 面電阻大於107 〇/□(測定範圍外)、550 nm之可見光透射率 為16% ’僅可獲得透射率為80%以下之不透明且高電阻之 薄膜。 [參考例3-2] 於1,2-二乙氧基乙烷39 9 g中添加二乙基鋅6 53 g(相當 • 於16.4質量%)。充分攪拌後,冷卻至-12。(:。將含有5.0% 水之1,4_二P号烷溶液以水相對於二乙基辞之莫耳比成為0.6 之方式進行滴加(添加總量:9.83 g)。然後,升溫至室溫 〇 (24 C )並於室溫下反應18小時,以薄膜過濾器進行過濾, 藉此獲得部分水解物溶液(濃度12 5質量%)83 5 g。 將以如上方式而得之包含部分水解物的含產物塗佈液, 藉由旋塗法塗佈於18 mm見方之康寧1737玻璃基板表面 上。然後,藉由將基板於50trc下加熱4分鐘而使溶劑乾 燥。進而將以上操作重複5次。然而,所形成之薄膜的表 面電阻大於1〇7 Ω/口(測定範圍外)、550 nm之可見光透射率 為88%,僅可獲得高電阻之薄膜。 〇 [參考例3-3] 於四氣咬嚼(滞點66。〇39.9 g中添加二乙基辞35〇 g(相 - 當於8.7質量%)。充分擾拌後,冷卻至·i2〇c。將含有5 〇% • 水之四氫°夫喃溶液以水相對於二乙基辞之莫耳比成為0.6 之方式進行滴加(添加總量·· 6.01 g)。然後,升溫至室溫 (24 C)並於至溫下反應18小時’以薄膜過濾器進行過濾, 藉此獲得部 &gt; 水解物溶液(濃度6.6質量%)43.9g。 將以如 F女-V、 而件之包含部分水解物的含產物塗佈液, 147876.doc -79- 201109279 藉由旋塗法塗佈於18 mm見方之康寧1737玻璃基板表面 上。然後’藉由將基板於50(rc下加熱4分鐘而使溶劑乾 燥,同時形成氧化辞。進而將以上操作重複2次。所形成 之薄膜的表面電阻為2.2χ105 Ω/α、55〇 nm之可見光透射率 為4%,僅可獲得不透明之薄膜。如圖18所示般,藉由 XRD除了確認到氧化鋅外,還確認到形成了鋅。[Examples 3 to 6] It was confirmed that the emulsified film of the sputum of the exemplified application of the exemplification of the exemplification of the exemplified method of the invention was formed as a transparent electrode, and it was confirmed that it could be used as a transparent conductive film. [Reference Example 3-1] To the 1,2-diethoxyethyl bromide 4〇 〇 g, diethyl ether was added]% g (corresponding to 3.15 mass%). After fully mixing, 'cooling to η:. The liquid solution containing 5.0% of water was added dropwise in such a manner that the molar ratio of water to diethyl ether was 〇6 (addition amount: 2_〇6 g). Then, the temperature was raised to room temperature = 4 C), and the reaction was carried out at room temperature for 18 hours, and filtration was carried out by a membrane transition apparatus, whereby a partial hydrolyzate solution (concentration of 27% by mass) was obtained. The product-containing coating liquid containing the partial hydrolyzate obtained in the above manner was applied onto the surface of a Corning 1737 glass substrate of 18 mm square by spin coating. Then, the solvent was dried by heating the substrate at 50 °C for 4 minutes. The above operation was repeated 5 times. However, the surface resistance of the formed film was 147876.doc -78·201109279, and the sheet resistance was more than 107 〇/□ ( Outside the measurement range, the visible light transmittance at 550 nm is 16% 'only an opaque and high-resistance film with a transmittance of 80% or less is obtained. [Reference Example 3-2] On 1,2-diethoxyethane Add 39 g of diethyl zinc to 39 9 g (equivalent to 16.4% by mass). After stirring well, cool to -12. (:. I. The mixture was added dropwise (total amount: 9.83 g) in such a manner that the molar ratio of diethyl ether was 0.6. Then, the temperature was raised to room temperature (24 C) and allowed to react at room temperature for 18 hours to obtain a membrane filter. Filtration was carried out, whereby a partial hydrolyzate solution (concentration: 125% by mass) of 83 5 g was obtained. The product-containing coating liquid containing the partial hydrolyzate obtained in the above manner was applied by spin coating to 18 mm square. On the surface of Corning 1737 glass substrate, the solvent was then dried by heating the substrate at 50 trc for 4 minutes. The above operation was repeated 5 times. However, the surface resistance of the formed film was larger than 1 〇 7 Ω/□ (outside the measurement range), and the visible light transmittance at 550 nm was 88%, and only a film having high resistance was obtained. 〇 [Reference Example 3-3] Add 4g of 35〇g (phase - as at 8.7% by mass) to the gas-trapping (stagnation point 66. 〇39.9 g). After full scramble, cool to ·i2〇c. 5 〇% • The tetrahydrogen solution of water is added dropwise in such a manner that the molar ratio of water to diethyl ether is 0.6 (total amount··6.01 g). Then, the temperature is raised to room temperature (24 C). And reacting at a temperature for 18 hours to filter with a membrane filter, thereby obtaining a portion of the hydrolyzate solution (concentration: 6.6% by mass) of 43.9 g, which will contain a partial hydrolyzate such as F-V. The product-containing coating solution, 147876.doc -79- 201109279 was applied by spin coating on the surface of a Corning 1737 glass substrate of 18 mm square. Then the solvent was made by heating the substrate at 50 rc for 4 minutes. Drying and simultaneously forming an oxidation word. The above operation was repeated twice. The surface resistance of the formed film was 2.2 χ 105 Ω/α. 55〇 nm visible light transmittance of 4%, the opaque film is only obtained. As shown in FIG. 18, in addition to confirmation by XRD to zinc oxide, also confirmed the formation of zinc.

[參考例3-4J 將以如上方式而得之塗佈液填充至圖14之喷霧製膜裝置 中之喷霧瓶内。將18 mm見方之康寧1737玻璃基板設置於 基板固持器上。於氮氣環境下,將玻璃基板加熱至 400 C。然後’不導入水蒸氣而自噴霧嘴將塗佈液以4 d/rnin喷霧16分鐘。所形成之薄膜的表面電阻為Μ% Ω/口二膜厚為〇.31㈣、55〇⑽之可見光透射率為,僅 可獲得不透明且高電阻之薄膜。[Reference Example 3-4J The coating liquid obtained in the above manner was filled in the spray bottle in the spray film forming apparatus of Fig. 14. A 18 mm square Corning 1737 glass substrate was placed on the substrate holder. The glass substrate was heated to 400 C under a nitrogen atmosphere. Then, the coating liquid was sprayed from the spray nozzle at 4 d/rnin for 16 minutes without introducing water vapor. The surface resistance of the formed film was Μ% Ω / the thickness of the two films was 可见光.31 (four), 55 〇 (10), and only the opaque and high-resistance film was obtained.

[參考例3 - 5 J 於y二料(滞點lGl.lt: ).() §中添加二乙基辞43 5 g(相當於8.0質量%)。充分授拌後,冷卻至_饥。將含有 5.0。/。水之K二吟烧(彿點1〇1 溶液以水相料二乙美 鋅之莫耳比成為0.6之方式進行滴加(添加總量:Μ / 然後’升溫至室溫(24。〇並於室溫下反應18小時以薄膜 過慮器進行過渡,藉此獲得部分水解物溶液(濃度_量 %)616.8g。於該部分水解物溶液中以相對於所投入之二 乙基鋅而以莫耳比計成為〇.〇1之方式添加三甲基銦,藉此 而獲得含有銦之部分水解物溶液617 2 g。 147876.doc -80· 201109279 將以如上方式而得之包含部分水解物的含產物塗佈液, 藉由旋塗法塗佈於18 mm見方之康寧1737玻璃基板表面 上。然後,藉由將基板於50(rc下加熱4分鐘而使溶劑乾 燥。進而將以上操作重複2次。然而,所形成之薄膜的表 面電阻為……Ω/□、膜厚為〇 37哗、體積電阻率為 4.8XUT1 55〇 nm之可見光透射率為%%,僅可獲得 高電阻之薄膜。 [參考例3-6] 將如參考例5般而得之包含部分水解物的含產物塗佈 液,藉由旋塗法塗佈於18 mm見方之康寧1737玻璃基板表 面上。然後,藉由將基板於5〇〇°C下加熱4分鐘而使溶劑乾 燥。進而將以上操作重複5次。然而,所形成之薄膜的表 面電阻為9·3χΐ〇 Ω/□、膜厚為0.35 μηι、體積電阻率為 3-2ΧΚΤ1 Ωπηι。55〇 nm之可見光透射率為67%,僅可獲得 南電阻且不透明之薄膜。 [實施例3-7] 於1,2-二乙氧基乙烷(沸點i21t)39 9 g中添加二乙基鋅 3.49 g(相當於8.7質量%)。充分攪拌後,冷卻至-12它。將 含有5·0%水之四氫呋喃(沸點66.0°C )溶液以水相對於二乙 基鋅之莫耳比成為〇_6之方式進行滴加(添加總量:611 g)。然後’升溫至室溫(24t:)並於室溫下反應18小時,以 薄膜過濾器進行過濾,藉此獲得部分水解物溶液(濃度6.5 質量。/。)48.0 g。藉由利用真空乾燥將溶劑等去除後之 NMR(THF_d8,Ppm)測定而獲得圖22之光譜。 147876.doc -81 - 201109279 將以如上方式而得之包含部分水解物的含產物塗佈液, 藉由旋塗法塗佈於18 mm見方之康寧1737玻璃基板表面 上。然後,藉由將基板於500°C下加熱4分鐘而使溶劑乾 燥’同時形成氧化鋅。it而將以上操作重複5次。所形成 之薄膜的表面電阻為1050 Ω/□、膜厚為〇 35 、體積電 阻率為3.7Χ10-2 Q.cm。進而,藉由XRD確認為氧化辞。 又,550 nm之可見光透射率為89%,可獲得透射率為㈣% 以上之透明氧化鋅薄膜。 [實施例3-8] 於實施例3-7中所製備之二乙基辞的部分水解物溶液 中,以相對於所投入之二乙基辞而以莫耳比計成為⑽之 方式添加三甲基鎵’藉此而獲得含有銦之部分水解物溶液 48.7 g 〇 — 一口〜々个浒物的含產物塗佈液, 猎由旋塗法塗佈於18 mm見方之康寧1737破璃 上。然後,藉由將基板於50(rc下加熱4 燥,同時形成氧化辞。進而將以上操作重複5次 之薄膜的表面電阻為420 Ω/ο、膜厚為 ^ 率Al6x〗(V2n 、“ ^ 體積電I® 550 ? m。進而,藉由XRD確認為氧化鋅。又, 550 rnn之可見光透射率為% 又 之透明氧化辞薄膜。 了 ^透射率為_以上[Reference Example 3 - 5 J In the y second material (stagnation point lGl.lt: ). () § Add diethyl 53.5 g (corresponding to 8.0% by mass). After fully mixing, cool to _ hunger. Will contain 5.0. /. Water K 吟 吟 ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( The reaction was carried out at room temperature for 18 hours to carry out a transition with a membrane filter, thereby obtaining a partial hydrolyzate solution (concentration_% by mass) of 616.8 g. In the partial hydrolyzate solution, it was compared with the diethylzinc charged. The ear ratio meter is added to trimethyl indium in the manner of 〇. 6171, thereby obtaining a partial hydrolyzate solution containing indium 617 2 g. 147876.doc -80· 201109279 will be partially hydrolyzed as described above. The product-containing coating solution was applied by spin coating on the surface of a Corning 1737 glass substrate of 18 mm square. Then, the substrate was dried by heating the substrate at 50 rc for 4 minutes. However, the surface resistance of the formed film was Ω/□, the film thickness was 〇37 哗, and the visible light transmittance of the volume resistivity of 4.8×UT1 55 〇nm was %%, and only a film having high resistance was obtained. [Reference Example 3-6] A partial hydrolyzate containing the same as Reference Example 5 The product coating solution was applied onto the surface of a Cornish 1737 glass substrate of 18 mm square by spin coating. Then, the solvent was dried by heating the substrate at 5 ° C for 4 minutes. 5 times. However, the formed film had a surface resistance of 9·3 χΐ〇Ω/□, a film thickness of 0.35 μηι, and a volume resistivity of 3-2ΧΚΤ1 Ωπηι. The visible light transmittance of 55〇nm was 67%, which was only available. A film having a south resistance and being opaque. [Example 3-7] 3.39 g (corresponding to 8.7% by mass) of diethyl zinc was added to 39 9 g of 1,2-diethoxyethane (boiling point i21t). Thereafter, it was cooled to -12. A solution containing 4,000% water in tetrahydrofuran (boiling point 66.0 ° C) was added dropwise in such a manner that the molar ratio of water to diethyl zinc became 〇_6 (addition amount: 611 g). Then, the temperature was raised to room temperature (24 t:) and allowed to react at room temperature for 18 hours, and filtered through a membrane filter, thereby obtaining a partial hydrolyzate solution (concentration: 6.5 mass %) of 48.0 g. The spectrum of Fig. 22 was obtained by measuring NMR (THF_d8, Ppm) after removing the solvent or the like by vacuum drying. 6.doc -81 - 201109279 The product-containing coating liquid containing the partial hydrolyzate obtained in the above manner was applied by spin coating on the surface of a Corning 1737 glass substrate of 18 mm square. Then, by using a substrate The film was dried by heating at 500 ° C for 4 minutes to form a zinc oxide. The above operation was repeated 5 times. The surface resistance of the formed film was 1050 Ω / □, the film thickness was 〇 35 , and the volume resistivity was 3.7Χ10-2 Q.cm. Further, it was confirmed to be an oxidized word by XRD. Further, the visible light transmittance at 550 nm was 89%, and a transparent zinc oxide film having a transmittance of (four)% or more was obtained. [Example 3-8] In the partial hydrolyzate solution of the diethyl group prepared in Example 3-7, three were added in a manner of (10) in terms of molar ratio with respect to the charged diethyl group. Methyl gallium was used to obtain a product-containing coating solution containing 48.7 g of a partial hydrolyzate solution of indium - one to one sputum, and was applied by spin coating on a Corning 1737 glass of 18 mm square. Then, by heating the substrate at 50 (rc), the oxidation resistance is formed at the same time. The surface resistance of the film which is repeated five times in the above operation is 420 Ω/ο, and the film thickness is Al6x (V2n, "^ The volumetric electric I® is 550 μm. Further, it is confirmed to be zinc oxide by XRD. In addition, the visible light transmittance of 550 rnn is transparent and transparent oxide film.

[實施例3-9J 於實施例3-7中所製備之二乙 卜以相對於所投人之-乙㈣而^分水解物溶液 -乙基辞而以莫耳比計成為〇〇ι之 147876.doc -82· 201109279 方式添加三辛基鋁,藉此獲得含有鋁之部分水解物溶液 48.7 g。 將以如上方式而得之包含部分水解物的含產物塗佈液, 藉由旋塗法塗佈於18 mm見方之康寧1737玻璃基板表面 上。然後,藉由將基板於50(TC下加熱4分鐘而使溶劑乾 燥,同時形成氧化鋅。進而將以上操作重複29次。所形成 之薄膜的表面電阻為44 Ω/□、膜厚為191 μιη、體積電阻 率為8.4Χ10·3 n.cm。進而,藉由XRD確認為氧化辞。又, 〇 550 nm之可見光透射率為84%,可獲得透射率為8〇%以上 之透明氧化鋅薄膜。 [實施例3-10] 於實施例3-7中所製備之二乙基辞的部分水解物溶液 中,以相對於所投入之二乙基鋅而以莫耳比計成為〇〇ι之 方式添加0.5 Μ之氫化紹•三乙基胺錯合物甲苯溶液,藉此 獲得含有鋁之部分水解物溶液48 4 g。 〇 將以如上方式而得之包含部分水解物的含產物塗佈液, 藉由旋塗法塗佈於18職見方之康寧1737玻璃基板表面 。然後,藉由將基板於5〇〇t下加熱4分鐘而使溶劑乾 燥,同時形成氧化鋅。進而將以上操作重複29次。所形成 之薄膜的表面電阻為57 Ω/口、膜厚為】86㈣、體積電阻 率為i.ixio-2 n.cm。進而,藉由XRD確認為氧化辞。又, 550 nm之可見光透射率為84%,可獲得透射率為㈣以上 之透明氧化辞薄膜。 [實施例3-11] 147876.doc -83- 201109279 於實施例3-7中所 中’以相對於所投入 方式添加三曱基鎵, 4 8 · 5 g。 製備之二乙基辞的部分水解物溶液 之二乙基鋅而以莫耳比計成為0.03之 藉此獲得含有鎵之部分水解物溶液 ’以如上方式而得之包含部分水解物的含產物塗佈液, 精由旋塗法塗佈於18 mm見方之康寧1737玻璃基板表面 然後,藉由將基板於500t:下加熱4分鐘而使溶劑乾 煉,同時形成氧化鋅。進而將以上操作重複㈣。所形成 之薄膜的表面電阻為62 Ω/□、膜厚為&quot;4 _、體積電阻 率為l.lxio-2 〜cm。進而,藉由XRD確認為氧化辞。又, 550 nm之可見光透射率為91%,可獲得透射率為80%以上 之透明氧化辞薄膜。 [實施例3-12] ;實知例3-7中所製備之二乙基鋅的部分水解物溶液 中’以相對於所投入之二乙基鋅而以莫耳比計成為〇·的之 方式添加三乙基鎵,藉此獲得含有鎵之部分水解 48.2 g。 朴將以如上方式而得之包含部分水解物的含產物塗佈液, 藉由紅塗法塗佈於18 mm見方之康寧1737玻璃基板表面 十。然後’藉由將基板於500t下加熱4分鐘而使溶劑乾 煉’同時形成氧化辞。進而將以上操作重複29次。所形成 之薄膜的表面電阻為40 Ω/口、膜厚為⑽_、體積電阻 率為6.6XW仏⑽。進而,藉由卿確認為氧化辞。又, 55〇 rnn之可見光透射率為92% ’可獲得透射率為以上 147876.doc _ 84 · 201109279 之透明氧化辞薄膜。 [實施例3-13] 於實施例3-7中所製備之二乙基辞的部分水解物溶液 中’以相對於所投入之二乙基鋅而以莫耳比計成為〇〇3之 方式添加氯化鎵,藉此獲得含有鎵之部分水解物溶液偏 g °[Examples 3-9J The two kinds of bismuth prepared in Examples 3-7 were obtained as 〇〇ι in terms of molar ratio with respect to the person-B (four) and the hydrolyzate solution-ethyl group. 147876.doc -82· 201109279 By adding trioctyl aluminum, a solution of 48.7 g of a partial hydrolyzate containing aluminum was obtained. The product-containing coating liquid containing the partial hydrolyzate obtained in the above manner was applied onto the surface of a Corning 1737 glass substrate of 18 mm square by spin coating. Then, the substrate was heated at 50 °C for 4 minutes to dry the solvent while forming zinc oxide. The above operation was repeated 29 times. The surface film formed had a surface resistance of 44 Ω/□ and a film thickness of 191 μm. The volume resistivity is 8.4 Χ10·3 n.cm. Further, it is confirmed to be an oxidized word by XRD. Further, the visible light transmittance of 〇550 nm is 84%, and a transparent zinc oxide film having a transmittance of 8 〇% or more can be obtained. [Examples 3 to 10] In the partial hydrolyzate solution of the diethyl group prepared in Example 3-7, the molar ratio was measured in terms of molar ratio with respect to the charged diethyl zinc. By adding 0.5 hydrazine of a hydrogenated succinyl-triethylamine complex toluene solution, thereby obtaining 48 4 g of a partial hydrolyzate solution containing aluminum. 〇 A product-containing coating liquid containing a partial hydrolyzate obtained in the above manner It was applied by spin coating to the surface of a Corning 1737 glass substrate of the 18th position. Then, the solvent was dried by heating the substrate at 5 Torr for 4 minutes, and zinc oxide was formed at the same time. The surface resistance of the formed film is 57 Ω/□, The thickness is 86 (four), and the volume resistivity is i.ixio-2 n.cm. Further, it is confirmed by XRD as an oxidation word. Further, the visible light transmittance at 550 nm is 84%, and transparent oxidation having a transmittance of (four) or more can be obtained. [Examples 3-11] 147876.doc -83- 201109279 In Example 3-7, 'triethyl gallium, 4 8 · 5 g was added relative to the input mode. Preparation of diethyl a part of the hydrolyzate solution of diethylzinc and a molar ratio of 0.03 to obtain a partial hydrolyzate solution containing gallium. The product-containing coating liquid containing the partial hydrolyzate obtained in the above manner, The spin coating method was applied to the surface of a Corning 1737 glass substrate of 18 mm square, and then the solvent was dried by heating the substrate at 500 t: for 4 minutes to form zinc oxide. The above operation was repeated (4). The surface resistance is 62 Ω/□, the film thickness is &quot;4 _, and the volume resistivity is l.lxio-2 〜 cm. Further, it is confirmed to be an oxidized word by XRD. Further, the visible light transmittance at 550 nm is 91%. A transparent oxide film having a transmittance of 80% or more can be obtained. [Examples 3-12]; It is known that triethyl gallium is added in a partial hydrolyzate solution of diethylzinc prepared in Examples 3-7 in such a manner that it is 〇· in terms of molar ratio with respect to the charged diethyl zinc. This obtained a partial hydrolysis of gallium containing 48.2 g. The product-containing coating liquid containing the partial hydrolyzate obtained in the above manner was applied by red coating on the surface of a Cornish 1737 glass substrate of 18 mm square. The solvent was dried by heating the substrate at 500 t for 4 minutes while forming an oxidized word. The above operation was repeated 29 times. The formed film had a surface resistance of 40 Ω/□, a film thickness of (10) _, and a volume resistivity of 6.6×W 仏 (10). Furthermore, it was confirmed by the Qing as an oxidation word. Further, the visible light transmittance of 55 〇 rnn was 92%', and a transparent oxidized film having a transmittance of 147876.doc _ 84 · 201109279 was obtained. [Examples 3-13] In the partial hydrolyzate solution of the diethyl group prepared in Examples 3-7, 'in the form of 〇〇3 in terms of molar ratio with respect to the input diethyl zinc Adding gallium chloride, thereby obtaining a partial hydrolyzate solution containing gallium

#將以如上方式而得之包含部分水解物的含產物塗佈液, 猎由旋塗法塗佈於18 _見方之康寧1737玻璃棊板表面 。然後,藉由將基板於50(TC下加熱4分鐘而使溶劑乾 燥’同時形成氧化辞。進而將以上操作重複29次。所形成 之薄膜的表面電阻為38 Ω/□、膜厚為i “叫、體積電阻 率為“xW〜m。進而’藉由卿確認為氧化辞。又, 550 nm之可見光透射率為90% 可獲得透射率為8〇%以上 之透明氧化鋅薄膜。 [實施例3-14] ;實施例3-7中所製備之二乙基鋅的部分水解物溶液 中,以相對於所投入之二乙基鋅而以莫耳比計成為〇〇3之 方式添加氯化銦,藉此獲得含有鎵之部分水解物溶液… 將以如上方式而得之 藉由旋塗法塗佈於1 8 包含部分水解物的含產物塗佈液, mm見方之康寧1737玻璃基板表面 。然後’藉由將基板於5〇〇。(:下加熱4分鐘而使溶劑乾 餘,同時形成氧化辞。進而將以上操作重複29次。所形成 之溥膜的表面電阻為35…口、膜厚為&quot;6 _、體積電阻 147876.doc -85- 201109279 率為6·6χ1() 3 Q.em °進而,藉由XRD確認為氧化鋅。又, 550 nm之可見光透射率為92%,可獲得透射率為以上 之透明氧化辞薄膜。# The product-containing coating liquid containing the partial hydrolyzate obtained in the above manner was applied by spin coating to the surface of a Corning 1737 glass raft on 18 _ square. Then, the substrate was dried by heating the solvent at 50 (TC for 4 minutes) to form an oxidation term. The above operation was repeated 29 times. The surface resistance of the formed film was 38 Ω/□, and the film thickness was i” The volume resistivity is "xW~m. Further," it is confirmed by oxidation as a oxidized word. Further, a visible light transmittance of 550 nm is 90%, and a transparent zinc oxide film having a transmittance of 8% or more can be obtained. 3-14]; in the partial hydrolyzate solution of diethylzinc prepared in Examples 3-7, chlorination is added in such a manner that it becomes 〇〇3 in terms of molar ratio with respect to the charged diethyl zinc. Indium, thereby obtaining a partial hydrolyzate solution containing gallium... It is applied by spin coating to a surface containing product containing a partial hydrolyzate, as described above, on the surface of a Corning 1737 glass substrate. Then, 'the substrate was heated at 5 Torr. Thickness is &quot;6 _, volume resistance 147876.doc -85- 201109279 rate is 6 6χ1 () 3 Q.em ° Further, as confirmed by XRD zinc oxide. Yet, 550 nm of the visible light transmittance was 92% or more of transmittance of the obtained transparent oxide film speech.

[實施例3-1 5J 於κ知例3-7中所製備之二乙基鋅的部分水解物溶液 中乂相對於所杈入之二乙基鋅而以莫耳比計成為〇的之 方式添加乙醯丙酮鎵,藉此獲得含有鎵之部分水解物溶液 48.4 g。 將以如上方式而得之包含部分水解物的含產物塗佈液, 藉由鉍塗法塗佈於18 mm見方之康寧1737玻璃基板表面 上。然後,藉由將基板於5〇(rc下加熱4分鐘而使溶劑乾 燥,同時形成氧化鋅。進而將以上操作重㈣次。所形成 之薄膜的表面電阻為41 Ω/□、膜厚為1.63 _、體積電阻 率為6.7x10、.cm。進而,藉由XRD確認為氧化鋅… 550 nm之可見光透射率為91%,可獲得透射率為咖以上 之透明氧化辞薄膜。 [實施例3-16] 於實施例3-7中所製備之二乙基辞的部分水解物溶液 中,以相對於所投入之二乙基鋅而以莫耳比計成為0.03之 方式添加乙醯㈣銦’藉此獲得含有鎵之部分水解物溶液 48.2 g。 肿以如上方式 广山 口丨刀求解物列言座物塗佈液 藉由旋塗法塗佈於18 mm見方之康寧1737玻璃基板表 上。然後,藉由將基板於爾下加熱4分鐘而使溶劑 147876.doc -86 - 201109279 燥,同時形成氧化鋅。進而將以 .^ ^ ^ * 刼作重複29次。所形成 之溥膜的表面電阻為42 Ω/口、 、厚為 1 μΠ1、體積電阻 率為6.8&gt;&lt;1〇_3仏(^。進 猎由XRD確認為氧化辞。又, 550 nm之可見光透射率為94%, 』獲侍透射率為80%以上 之透明氧化鋅薄膜。 [實施例3-1 7] 於實施例3-7中所製備之― 一基辞的部分水解物溶液 中,以相對於所投入之-r其拉二 ^ ❹ ❹ 又八之一乙基鋅而以莫耳比計成為〇.03之 方式添加乙酸鋼,藉士卜遽 ^圼人士 错此獲仔含有鎵之部分水解物溶液48.5 g ° 將以如上方式而得之包含部分水解物的含產物塗佈液, 藉由旋塗法塗佈於18mm見方之康寧1737玻璃基板表面 上。然後’藉由將基板於500t下加熱4分鐘而使溶劑乾 燥:同時形成氧化鋅。進而將以上操作重複仏欠。所形成 之薄膜的表面電阻為38 Ω/□、膜厚為! 6 率為進而,_電阻 逛甸镨由XRD確認為氧化鋅。又, 550 nm之可見光透射率為92%,可獲得透射率為嶋以上 之透明氧化辞薄膜。 [實施例4-1] 塗佈用組合物之製備係於氮氣環境下進行,溶劑係全部 進行脫水及脫氣而使用。於二異丙❸(KM g中添加二乙基 辞1〇·54 g’並相對於二乙基鋅而添加1〇则1%(〇11幻之 二乙基IS。充㈣拌後進行過遽而獲得塗佈用組合物。 將以如上方式而得之塗佈用組合物填充至圖23之嘴霧製 147876.doc •87· 201109279 膜裝置中之噴霧瓶内。將載玻片基板設置於基板固持器 上。將玻璃基板加熱至100乞後,於大氣壓下、25t:、以 60 /〇之相對濕度存在水之空氣中,自喷霧嘴,將塗佈用組 。物以3 ml/min噴霧1〇分鐘。自噴霧嘴噴出之液滴大小為 3〜20 μηι之範圍,且將噴霧嘴與基板之距離設為4〇 而進 行。形成於基板上之薄膜的膜厚係藉由SEM測定而求得, 約為240 nm。形成於基板上之薄膜如圖24所示般,藉由 XRD確認為氧化鋅。又,可見光之平均透射率為、且 表面電阻為4·2χ1〇4 Ω/□,可獲得透射率為8〇%以上之透 月且表面電阻為1χ1〇5 Ω/□以下之低電阻的氧化鋅薄 膜。 [實施例4-2] 除了將三乙基鋁變更為三甲基鎵以外,全部以與實施例 1相同之方式進行。形成於基板上之薄膜的膜厚係藉由 SEM測定而求得,約為21G _。形成於基板上之薄膜如圖 25所不般,藉由XRD確認為氧化辞。又,可見光之平均透 射率為86%、表面電阻為4·3χ1〇4…口,可獲得透射率為 80%以上之透明、且低電阻之氧化辞薄膜。 [實施例4-3] 除了將三乙基鋁變更為三甲基銦以外,全部以與實施例 1相同之方式進行。形成於基板上之薄膜的膜厚係藉由 SEM測定而求得,約為15〇 nm。形成於基板上之薄膜如圖 26所示般,藉由XRD確認為氧化鋅。又,可見光之平均^ 射率為83%、表面電阻為6.7xl〇3 〇/口,可獲得透射率為 147876.doc -88 - 201109279 80%以上之透明、且低電阻之氧化鋅薄膜。 [實施例4-4] 除了將玻璃基板加熱至戰以外,以與實施例i相同之 方式進行。形成於基板上之薄膜㈣厚係藉由囊測定而 求得,約為300 nm。形成於美柘μ 兮 風於基扳上之薄膜如圖27所示般, 精由XRD確s忍為氧化鋅。又,可目止 Τ見光之平均透射率為 82%、且表面電阻為ι.7χ1〇4 Ω/ U i2/口可獲得透射率為80%以 上之透明、且低電阻之氧化辞薄膜。 Ο[Example 3-1 5J] The manner in which the hydrazine in the partial hydrolyzate solution of diethylzinc prepared in κ3 to 3-7 was oxime in terms of molar ratio with respect to the diethylzinc which was incorporated. Ethyl gallium acetonate was added, whereby 48.4 g of a partial hydrolyzate solution containing gallium was obtained. The product-containing coating liquid containing the partial hydrolyzate obtained in the above manner was applied by coating onto a surface of a Corning 1737 glass substrate of 18 mm square. Then, the substrate was heated at 5 Torr (rc for 4 minutes to dry the solvent while zinc oxide was formed. The above operation was repeated (four times). The surface film formed had a surface resistance of 41 Ω/□ and a film thickness of 1.63. _, volume resistivity is 6.7x10, .cm. Further, it is confirmed by XRD that zinc oxide... The visible light transmittance at 550 nm is 91%, and a transparent oxidized film having a transmittance of not more than coffee can be obtained. 16] In the partial hydrolyzate solution of the diethyl group prepared in Example 3-7, acetonitrile (tetra) indium was added in a manner of 0.03 in terms of molar ratio with respect to the charged diethyl zinc. This obtained 48.2 g of a partial hydrolyzate solution containing gallium. The swelling was applied to the surface of a Corning 1737 glass substrate of 18 mm square by a spin coating method in the above manner. The solvent 147876.doc -86 - 201109279 was dried by heating the substrate for 4 minutes, and zinc oxide was formed at the same time. Further, the film was repeated 29 times with .^ ^ ^ * 。. The surface resistance of the formed ruthenium film was 42 Ω/□, , 1 μΠ thick, volume resistivity 6.8&gt;&lt;1 〇_3仏(^. The hunting was confirmed by XRD as an oxidation word. In addition, the visible light transmittance at 550 nm was 94%, and the transparent zinc oxide film having a transmittance of 80% or more was obtained. [Example 3-1 7 In the partial hydrolyzate solution of the radicals prepared in Examples 3-7, it is measured in a molar ratio with respect to the -r ❹ ❹ Adding acetic acid steel in the manner of 〇.03, by the person who is a person who has obtained a partial hydrolyzate solution containing gallium, 48.5 g ° The spin coating method was applied to the surface of a Corning 1737 glass substrate of 18 mm square. Then, the solvent was dried by heating the substrate at 500 t for 4 minutes: zinc oxide was simultaneously formed. Further, the above operation was repeated. The surface resistance is 38 Ω/□, and the film thickness is! 6 The rate is further determined by XRD as zinc oxide. Further, the visible light transmittance at 550 nm is 92%, and the transmittance is above 嶋. Transparent oxidized film. [Example 4-1] Preparation of coating composition was carried out in a nitrogen atmosphere The solvent was all dehydrated and degassed. In diisopropyl hydrazine (addition of diethyl quinone 1 〇 54 g' to KM g and 1 添加 with respect to diethylzinc was 1% (〇 11 phantom diethyl IS. After filling (4), the coating composition was obtained by hydrating. The coating composition obtained as above was filled into the mouth of the nozzle of Fig. 23 147876.doc •87· 201109279 In the spray bottle in the membrane device, the slide substrate is placed on the substrate holder. After heating the glass substrate to 100 Torr, the coating group was applied from the spray nozzle under atmospheric pressure at 25 t: in the presence of water at a relative humidity of 60 Torr. The spray was sprayed at 3 ml/min for 1 minute. The droplet size ejected from the spray nozzle was in the range of 3 to 20 μm, and the distance between the spray nozzle and the substrate was set to 4 Torr. The film thickness of the film formed on the substrate was determined by SEM measurement and was about 240 nm. The film formed on the substrate was confirmed to be zinc oxide by XRD as shown in Fig. 24 . Further, the average transmittance of visible light and the surface resistance are 4·2χ1〇4 Ω/□, and a low-resistance oxidation having a transmittance of 8〇% or more and a surface resistance of 1χ1〇5 Ω/□ or less can be obtained. Zinc film. [Example 4-2] All were carried out in the same manner as in Example 1 except that triethylaluminum was changed to trimethylgallium. The film thickness of the film formed on the substrate was determined by SEM measurement and was about 21 G _. The film formed on the substrate was confirmed to be an oxidized word by XRD as shown in Fig. 25. Further, the average transmittance of visible light was 86%, and the surface resistance was 4·3 χ 1 〇 4..., and a transparent, low-resistance oxidized film having a transmittance of 80% or more was obtained. [Example 4-3] All were carried out in the same manner as in Example 1 except that triethylaluminum was changed to trimethylindium. The film thickness of the film formed on the substrate was determined by SEM measurement and was about 15 Å nm. The film formed on the substrate was confirmed to be zinc oxide by XRD as shown in Fig. 26 . Further, the average visible light transmittance was 83%, and the surface resistance was 6.7 x 10 〇 3 〇 / □, and a transparent, low-resistance zinc oxide film having a transmittance of 147876.doc -88 - 201109279 80% or more was obtained. [Example 4-4] The same procedure as in Example i was carried out except that the glass substrate was heated to war. The thickness of the film (4) formed on the substrate was determined by capsule measurement and was about 300 nm. The film formed on the 柘μ 兮 wind on the base plate is as shown in Fig. 27, and it is determined by XRD that it is zinc oxide. Further, it is possible to obtain a transparent, low-resistance oxidized film having a transmittance of 80% or more and an average surface transmittance of 82% and a surface resistance of ι.7 χ 1 〇 4 Ω / U i2 / port. Ο

[實施例4-5] 以與實施例2相同之 除了將玻璃基板加熱至2〇〇°c以外 方式進行。形成於基板上之薄膜的膜厚係藉由刪測定而 求得,約為250 nm。形成於基板上之薄膜如圖顺示般, 藉由XRD確認為氧化鋅。又,可見光之平均透射率為 86%、表面電阻為8.0XH)3 Ω/□,可獲得透射率為8〇%以上 之透明 '且低電阻之氧化鋅薄膜。 [實施例4-6] 除了將玻璃基板加熱至200t以外,以與實施例3相同之 方式進行。形成於基板上之薄膜的膜厚係藉由SEM測定而 求得,約為280 nm。形成於基板上之薄膜如圖29所示般, 藉由XRD確認為氧化鋅。又,可見光之平均透射率為 890/。、表面電阻為3·6χ ΙΟ3 Ω/□,可獲得透射率為8〇%以上 之透明、且低電阻之氧化鋅薄膜。 以下之比較例1〜3係基於非專利文獻1中第i 68頁之表之 第17條(文獻編號199)之技術而實施者。但是,所得之結果 147876.doc •89· 201109279 而是如以下比較例所 並非上述文獻之表中所記載之特性 示之非常差之值。 [比較例4-1J 卞〜肢償比馬·&quot; : 1的混合溶劑200.3 g中添加ζ 酸鋅二水合物10.54 g’並相對於乙酸鋅二水合物而添也 M)moi%(〇.〇9g)之氯化銘六水合物,充分授掉進行過 獲得塗佈用組合物。 w 將以如上方式而得之塗你用^日人札丨古士 ^ 邯用組合物填充至圖Μ之喷霧製 膜裝置中之喷霧瓶内。將载玻片基板設置於基板固持器 上。將玻璃基板加熱至⑽。〇後,自喷嘴將塗佈用电人 物以3 mi/min喷霧1G分鐘。藉由趣未確認到源自氧㈣ 之波峰(未圖示)。又,可目本 了見先之平均透射率為1 0%、表面 電阻大於ι.〇χίο7 測定r阁^ (叫疋範圍外),僅可獲得不透明、且 高電阻之薄膜。 [比較例4-2] -了將氯化!呂&quot;水合物變更為氯化鎵以外,全部以與比 較m相同之方式進行。藉由xrd未確認到源自氧化辞之[Example 4-5] The same procedure as in Example 2 was carried out except that the glass substrate was heated to 2 °C. The film thickness of the thin film formed on the substrate was determined by subtractive measurement and was about 250 nm. The film formed on the substrate was confirmed to be zinc oxide by XRD as shown. Further, the average transmittance of visible light was 86%, and the surface resistance was 8.0 XH) 3 Ω/□, and a transparent 'and low-resistance zinc oxide thin film having a transmittance of 8 % or more was obtained. [Example 4-6] The same procedure as in Example 3 was carried out except that the glass substrate was heated to 200 t. The film thickness of the film formed on the substrate was determined by SEM measurement and was about 280 nm. The film formed on the substrate was confirmed to be zinc oxide by XRD as shown in Fig. 29 . Moreover, the average transmittance of visible light is 890/. The surface resistance is 3·6 χ 3 Ω/□, and a transparent, low-resistance zinc oxide film having a transmittance of 8〇% or more can be obtained. The following Comparative Examples 1 to 3 were carried out based on the technique of Article 17 (Document No. 199) of the table on page i68 of Non-Patent Document 1. However, the result obtained is 147876.doc •89·201109279, but is a very poor value as shown by the following comparative examples. [Comparative Example 4-1J 卞 肢 肢 肢 肢 · 肢 肢 肢 肢 肢 肢 肢 肢 肢 肢 肢 : : : : 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 The chlorinated hexahydrate of 〇9g) was sufficiently discarded to obtain a coating composition. w Apply the above method to the spray bottle in the spray film making device of the Μ 丨 丨 丨 丨 丨 。 。 。. The slide substrate is placed on the substrate holder. The glass substrate is heated to (10). After the crucible, the coated electric object was sprayed at 3 mi/min for 1 G minutes from the nozzle. The peak derived from oxygen (4) was not confirmed by interest (not shown). Further, it can be seen that the average transmittance is 10%, and the surface resistance is larger than ι.〇χίο7, which is an opaque and high-resistance film. [Comparative Example 4-2] - Chlorination will be carried out! All of the hydrates were changed to gallium chloride, and all were carried out in the same manner as in comparison with m. Unrecognized by xrd

波峰(未圖示)。又,可見本+ T J見九之平均透射率為9%、表面電阻 大於1 ·0X 1 〇7 Ω/□(測定筋囹々k、 V』疋乾圍外),僅可獲得不透明、且高電 阻之薄膜。 [比較例4-3] 除了將氣化銘六水人物戀s &amp; 艰口物變更為氣化銦四水合物以外,全 op以與比較例1相因夕古^ ^ 相门之方式進行。藉由XRD未確認到源自 氧化辞之波峰(未圖示)。 ^ 147876.doc -90. 201109279 /〇表面電阻大於1,〇χ1〇7 Ω/α(測定範圍外),僅可獲得 不透明、且高電阻之薄膜。 [產業上之可利用性] 本發月可用於摻雜及無摻雜之氧化鋅薄膜之製造領域。 【圖式簡單說明】 圖1係實施例1-1中所犋夕女地Μ ,人 汀传之有機鋅組合物之NMR光譜; 、 所件之有機鋅組合物之NMR光譜; ΟWave crest (not shown). In addition, it can be seen that the average transmittance of the +TJ see nine is 9%, the surface resistance is greater than 1 · 0X 1 〇 7 Ω / □ (measured tendons k, V 疋 dry circumference), only opaque and high can be obtained A film of resistance. [Comparative Example 4-3] In addition to changing the gasification of Mingliushui people's love s &amp; masculine to gasified indium tetrahydrate, the whole op was carried out in the same manner as in Comparative Example 1 . The peak derived from the oxidation word (not shown) was not confirmed by XRD. ^ 147876.doc -90. 201109279 /〇The surface resistance is greater than 1, 〇χ1〇7 Ω/α (outside the measurement range), only opaque, high-resistance films are available. [Industrial Applicability] This month's month can be used in the field of manufacturing of doped and undoped zinc oxide thin films. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is an NMR spectrum of an organozinc composition of the 女 女 Μ Μ 人 人 人 实施 实施 实施 实施 ; ; ; ; ; ; ; ; ; NMR NMR 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机

圖3係實施例卜3中所得之氧化鋅薄膜之鳩光譜; 圖4係實施例W中所得之氧化鋅薄膜之則光譜 圖5係實施例1 -5中所得夕畜儿 吓侍之氧化鋅薄膜之XRD光譜 圖6係實施例1 -6中所得夕儿 W侍之軋化鋅薄膜之XRD光譜 圖7係二乙基鋅之NMR光譜(參照圖); 圖8係實施例2_ 1中所得之細 之、,且s物之真空乾燥後之NMR光 譜; 圖9係實施例2 -1中所得 譜; 圖10係實施例2 - 2中所得 光譜; 圖11係實施例2-2中所得 譜; 之銘摻雜氧化辞薄膜之XRD光 之細·合物之真空乾燥後之NMR 之録摻雜氧化鋅薄膜之XRD光 圖12係實施例2 - 3中所得 光譜; 圖13係實施例2-3中所得 譜; 之組合物之真空乾燥後之NMR 之鋼摻雜氧化辞薄膜之XRD光 147876.doc -91 - 201109279 圖14係實施例2_4中所得Figure 3 is a spectrum of the zinc oxide film obtained in Example 3; Figure 4 is a spectrum of the zinc oxide film obtained in Example W. Figure 5 is a zinc oxide obtained in Example 1-5. XRD spectrum of the film FIG. 6 is an XRD spectrum of the zinc-zinc film obtained in Example 1 -6. FIG. 7 is an NMR spectrum of diethylzinc (see FIG.); FIG. 8 is obtained in Example 2-1. NMR spectrum after vacuum drying of s; Figure 9 is the spectrum obtained in Example 2-1; Figure 10 is the spectrum obtained in Example 2-2; Figure 11 is the result obtained in Example 2-2 The XRD pattern of the NMR-doped zinc oxide film after vacuum drying of the XRD light of the oxidized film of the oxidized film is the spectrum obtained in Example 2 - 3; Figure 13 is an example The spectrum obtained in 2-3; the XRD light of the NMR steel doped oxidation film after vacuum drying of the composition 147876.doc -91 - 201109279 Figure 14 is obtained in Example 2_4

光譜; 、,且D物之真空乾燥後之NMR 圖15係實施例2_8中所 圖⑽〜 中所使用之裝置的說明圖; 圖16係貫施例2-8中所得NMR FIG. 15 is an explanatory diagram of the apparatus used in the drawing (10) to (2) in Example 2-8; FIG. 16 is the result obtained in Example 2-8.

光譜; ,·且s物之真空乾燥後之NMR 圖17係表示喷霧製膜裝置之圖; 圖18係實施例中所得NMR; and NMR of the s object after vacuum drying FIG. 17 is a view showing a spray film forming apparatus; FIG. 18 is an example obtained in the embodiment.

光古普· 、,且5物之真空乾燥後之NMR 圖19係實施例3-1中所得 门 ^ 、之乳化鋅薄膜之XRD光譜; 圖2 0係實施例3 - 4中所值+ &amp; 之氣化鋅薄膜之XRD光譜; 圖21係參考例3_3中所撂 , 厅侍之乳化鋅薄膜之XRD光譜; 圖2 2係實施例3 - 7中所抵々&amp;人NMR FIG. 19 is the XRD spectrum of the emulsified zinc film obtained in Example 3-1; FIG. 2 is the value of Example 3 - 4 + &amp; The XRD spectrum of the zinc-vaporized film; FIG. 21 is the XRD spectrum of the emulsified zinc film of the room 参考 参考 参考 ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; 乳化 乳化 乳化 乳化 乳化

、之、·且&amp;物之真空乾燥後之NMR 光譜; 圖23係表示噴霧製膜裝置之圖; 圖24係實施例4-1中所棵夕&amp; 丫所件之乳化辞薄膜之XRD光譜; 圖25係實施例4-2中所桿夕与 听件之虱化鋅薄膜之XRD光譜; 圖2 6係貫施例4 - 3中所措夕&amp; T所传之軋化鋅薄膜之xrd光譜; 圖27係實施例4-4中所得夕汽 ^件之乳化鋅薄膜之XRD光譜; 圖28係實施例4-5中所得 件之乳化鋅溥膜之XRD光譜;及 圖29係實施例4_6中所得 ^付之虱化鋅薄膜之XRD光譜。 【主要元件符號說明】 喷霧瓶 2 3 〇FIG. 23 is a view showing a spray film forming apparatus; FIG. 24 is an XRD of the emulsified film of the eve &amp; Figure 25 is the XRD spectrum of the zinc telluride film of the rod and the hearing piece in Example 4-2; Figure 2 is the zinc film rolled by the film &amp; T in Example 4-3 Figure 27 is an XRD spectrum of the emulsified zinc film obtained in Example 4-4; Figure 28 is an XRD spectrum of the emulsified zinc ruthenium film obtained in Example 4-5; and Figure 29 is The XRD spectrum of the zinc telluride film obtained in Example 4-6. [Main component symbol description] Spray bottle 2 3 〇

CJ 基板固持器(附加熱器) 喷霧嘴 147876.doc -92- 201109279 4 壓縮機 5 無驗玻璃基板 6 水蒸氣導入用管CJ substrate holder (with heater) Spray nozzle 147876.doc -92- 201109279 4 Compressor 5 No glass substrate 6 Water vapor introduction tube

147876.doc -93-147876.doc -93-

Claims (1)

201109279 七 1. Ο 、申請專利範圍: -種氧化鋅薄膜製造用 S2中添加水,至少將下、十?其包含在溶液S1或溶液 得之產物.μ + 述有機鋅化合物至少部分水解而 付之產物,上述溶液81係 _ 入物.、容解;,下述通式(1)所示之有機鋅化 解於供電子性有機 u. ,, .a .. , π奋則中而成者,上述溶液S2係 將下述通式(1)所示之有 m、s々, 機辞化合物、以及下述通式(2) 或下述通式(3)所示之邛族 、素化合物的至少1種溶解於 供電子性有機溶劑中而成者: R^Zn-R1 (1) (式中,Rl為碳數1〜7之直鏈或支鏈燒基) McXd.aH2〇 ⑺ (式中Μ為3B族凡素’ χ為齒素原子、頌酸或硫酸,於 Χ為齒素原子或石肖酸時,⑷、d為3,於X為硫酸時,'c 為2、d為3、a為〇〜9之整數) r8-~m~r3 * ㈤ η (3) 〇 (式中,MWB族元素,R2、R3、R4獨立為氫、碳數W 之直鏈或支鏈烷基、碳數1〜7之直鏈或支鏈烷氧基、綾 酸基、或乙醯丙酮基,進而L為含有氮、氧或磷之配位 性有機化合物,η為0〜9之整數)。 2.如請求項1之組合物,其中上述溶液81係以相對於有機 鋅化合物之莫耳比成為0.6〜0.9之範圍之方式添加水。 叫求項2之組合物’其包含將自上述有機溶劑分離之 上述產物溶解於與上述供電子性有機溶劑不同的薄獏形 147876.doc 201109279 成用有機溶劑中而得之溶液。 4. 12質量% 如請求項3之組合物’其中上述產物之濃度為3 之範圍。 5. 6· 如請求項2至4中任一項之組合物 機溶劑為四氫吱喃。 如請求項3至5中任—項之組合物 有機溶劑為1,4-二号烧。 其中上述供電子性有 其中上述薄膜形成用 明求項1之組合物,其係用以製造摻雜氧化辞薄膜 者’其中上述溶液以中’上述3職元素化合物相對於上 述有機辞化合物之莫耳比為0.005〜0.3之比例。 8. 如請求項7之組合物’其中上述產物包含上述3b族元素 化合物之水解物。 9·如请求項7或8之組合物,其中上述水之添加量相對於上 述有機辞化合物及3B族元素化合物之合計量之莫耳比為 〇,4〜0.9之範圍。 9· 一種摻雜氧化辞薄膜製造用組合物,其包含藉由於將水 外、加至上述溶液S 2中而得之如請求項1至5中任一項之組 合物中’以相對於上述有機鋅化合物之莫耳比成為 〇·〇〇5〜0.3之比例之方式添加通式(2)或通式(3)所示之3B 族元素化合物之至少1種而得之產物, McXd.aH20 (2) (式中,Μ為3 B族素’ X為鹵素原子、石肖酸或硫酸,於 χ為鹵素原子或硝酸時,C為1、d為3,於X為硫酸時,C 為2、d為3、a為0~9之整數) 147876.doc 201109279 R玄—〜ϊ?容 I *(L)a ⑻ R4 (式中’ M為3B族元素’ R2、R3、R4獨立為氫、碳數1〜7 之直鏈或支鏈烧基、碳數1〜7之直鏈或支鏈院氧基、緩 酸基、或乙醯丙酮基,進而L為含有氮、氧或磷之配位 性有機化合物,η為0〜9之整數)。 如明求項9之組合物,其中上述產物實質上不含上述3Β 族元素化合物之水解物。 G Η.如請求項9或10之組合物,其中上述溶㈣中水之添加 量係相對於上述有機辞化合物之莫耳比為〇 4〜〇 9之範 圍。 12.如請求項7至丨】中任 組甘物,其中上述組合物 通式⑴所示之有機鋅化合物之含量為0·5質量%以下。 13. 如請求項7至12中任—項之組合物,其包含將上述產物 〇 :=上述供電子性有機溶劑不同的薄膜形成用有機 /夺劑而传之溶液。 14. :請求項7至13中任一項之組合物,其 度為1〜30質量%之範圍。 。座物之濃 15. 如請求項1之組合物,立 點為_以上之供電= 生;1 有機溶劑係滞 赋以上含μ點為 上之i、電子性有機溶劑作為 :劑’上述溶液si係於上述溶劑中溶解通式有機 機::::而成™之範圍之c有 量相對於上述有—莫耳比計為 147876.doc 201109279 0.4〜0.8之範圍。 16. 17. 18. 19. 20. 一種組合物,其係於如請求項15之組合物中,以相對於 上述有機鋅化合物之莫耳比成為0.005〜〇丨之比例之方式 添加下述通式(2)所示之有機3B族元素化合物而獲得: Ra-M-R3 I ♦ (L) n (2) R4 (式中’ Μ為3B族元素’ R2、r3、R4獨立為氫、碳數卜? 之直鏈或支鏈烷基、碳數1〜7之直鏈或支鏈烷氧基、羧 酸、或乙醯丙酮基,L為含有氮、氧、或磷之配位性有 機化合物,η為0〜9之整數)。 如請求項1之組合物,其中上述供電子性有機溶劑係沸 點為110°C以上之供電子性有機溶劑、或含有沸點為 110 °c以上之供電子性有機溶劑作為主成分之混合有機 溶劑; 上述溶液S2係溶解有機鋅化合物與有機3B族元素化人 物而成合計濃度為4〜12質量%之範圍的溶液; 水之添加量相對於上述有機辞化合物以莫耳比計為 〇_4〜0.8之範圍。 如請求項15至17中任一項之組合物,其中上述供電子性 有機溶劑係沸點為23(TC以下。 如晴求項1至18中任一項之組合物,其中上述有機鋅化 合物係Rl為碳數1、2、3、4、5、或6之烷基的化合物。 如請求項1至19中任一項之組合物,其中上述有機鋅 &amp;物為二乙基辞。 147876.doc 201109279 21.如4求項1至14中任一項之組合物,其中上述供電子性 有機溶劑為1,4-二号烧。 22·如請求項16至21中任一項之組合物,其中上述通式之 有機3B族元素化合物為三曱基銦。 23.如請求項16至21中任一項之組合物,其中上述通式(?)之 有機3B族元素化合物為三乙醯丙酮鋁、三乙醯丙_鎵、 -乙酿丙綱鋼。 〇 〇 24.如請求項16至21中任一項之 70素化合物為氯化鋁、氯化鎵、氯化銦 25·如請求項16至21中任一項之組合物,其中上述供電子性 有機洛劑為1,2-二乙氧基乙烧。 26. ^睛求項15至24中任—項之組合物,其中上述混合有機 溶劑為1,2-二乙氧基乙烷與四氫呋喃之混合溶劑。 27· -種氧化鋅薄膜之製造方法,其包括:將如請求^至 14中任—項之組合物塗佈於基板表面,繼而將所得之塗 佈膜於WC以下之溫度下進行加熱而形成氧化辞薄膜 或摻雜有3B族元素之氧化辞薄膜。 28·如請求項27之製造方法,盆 r上江乳化辞薄膜對可見光 具有80%以上之平均透射率。 29. —種氧化鋅薄膜之製造方法, 飞氧化鋅溥膜對可見光具 有80/ό以上之平均透射率且辦接4 τ半且體積電阻率未達8χΐ〇_2 該製造方法包括進行至少!次以下操作:將下述 組合物A、MC於惰性氣體環境下塗伟於基板表面,繼 而對所得之塗佈膜進行加熱; 147876.doc 201109279 組合物A : ::合物包含以如下方式所得之產物:於將下述通式 之有機辞化合物溶解於沸點為11 (TC以上之供雷 子=有機溶劑、或含有彿點為⑽以上之供電子性 2 :作為主成分之混合有機溶劑而成4〜12質量。/。之範 之/度的溶液中,以相對於上述有機鋅化合物之莫 二成為0.4〜0.8之範圍之方式添加水,而至少將上述有 辞化合物部分水解, W-Zn-Ri ⑴ (式中,R為碳數卜7之直鏈或支鏈烷基广 組合物B : 該組合物係於上述組合物A中以相對於上述有機辞 化合物之莫耳比成為〇〇〇5〜〇」之比例之方式添加下述通 式(2)所示之有機3B族元素化合物而獲得, R3 ^4 · (U η (2) (式中,Μ為3Β族元素,r2、r3、^獨立為氯、碳數w 之直鏈或支鏈烷基、碳數1〜7之直鏈或支鏈烷氧基、羧 酸、或乙酿丙剩基,L為含有氮、氧、或碟之配位性有 機化合物,η為〇〜9之整數); 組合物C : 該組合物包含以如下方式所得之產物·於將下述通式 (1)所示之有機鋅化合物、 W-Zn-R1 (1) 147876.doc 201109279 (式中’ R1為碳數卜7之直鏈或支鏈燒基) 相對於上述有機辞化合物之莫耳^為〇 〇〇5〜〇 〇9之比 例的下述通式(2)或⑺所示之有機❿族元素化合物 R2~M*~ R3 R4 (L) (2) (式中’ Μ為3B族元素,R2、R3、尺4獨立為氯、碳數卜7 之直鏈或支鏈烧基、碳數i〜7之直鏈或支㈣氧基1 Ο Ο 酸、或乙醯丙酮基,L為含有氮、氧、或麟之配位性有 機化合物,η為0〜9之整數) McXd«aH20 (3) (式中’ Μ為3B族元素’ X為幽素原子、石肖酸或硫酸,於 X為南素原子或硕酸時’…、呜3’於χ為硫酸時,c 為2、d為3、a為〇〜9之整數) 溶解於沸點為11〇t以上之供電子性有機溶劑、或含 有沸點為UOt以上之供電子性有機溶劑作為主成分之 混合有機溶劑而成上述有機鋅化合物與有機把族元素化 合物之合計濃度為4〜12質量%之範圍的溶液中,以相對 於上述有機辞化合物之莫耳比成為〇.4〜0.8之範圍之方式 添加水,而至少將上述有機辞化合物部分水解。 3〇·=求項29之氧化鋅薄膜之製造方法,其中上述惰性氣 體每境含有水蒸氣。 求項3〇之製造方法,其中含有水蒸氣之惰性氣體環 兄糸相對濕度為2〜15%之範圍。 32. 一種I化辞薄膜之製造方法,該氧化鋅薄臈對可見光具 147876.doc 201109279 有80%以上之平 射率且體積電 率 小⑽,該製造方法包括 午木運1X10 产 將組合物A、B或C於含; 氣之惰性氣體環境下 有水蒸 組合物A: 噴塗於經加熱之基板表面; :組合t包含以如下方式所得之產物:㈣下述通式 二::之有機辞化合物溶解於彿點為⑽以上之j 性有機溶劑、或含有沸點為⑽以上之供電子性有 機溶劑作為主成分 有 珉刀之混合有機溶劑而成4〜12質 圍之濃度的溶液中,以相斟认L + '之軏 從T U相對於上述有機辞化合物之莫耳 比成為0.4〜0.8之範圍之太斗、 靶1^之方式添加水,而至少將上述有機 鋅化合物部分水解, R丨-Zn-R丨(1) (式中,R1為碳數i〜7之直鏈或支鏈烷基); 組合物B : 該組合物係於上述組合物A中,以相對於上述有機鋅 化合物之莫耳比成為0.005〜〇」之比例之方式添加下述通 式(2)所示之有機3B族元素化合物而獲得, R3 I * (L) η (2) R4 (式中,]VI為3B族元素,R2、R3、R4獨立為氫、碳數1〜7 之直鏈或支鏈烷基、碳數1〜7之直鏈或支鏈烷氧基、缓 酸、或乙醯丙酮基’ L為含有氮、氧、或磷之配位性有 機化合物,η為0~9之整數); 組合物C : 147876.doc 201109279 該組合物包含以如下方式所得之產物:於將下述通式 (1)所示之有機鋅化合物、 R^Zn-R^l) (式中,R1為碳數1〜7之直鏈或支鏈烷基) 相對於上述有機辞化合物之莫耳比為〇 〇〇5〜〇 〇9之比 例的下述通式(2)或(3)所示之有機3B族元素化合物 I, * α) η ⑵ (式中,Μ為3Β族元素,R2、R3、R4獨立為氫、碳數丨〜了 之直鏈或支鏈烷基、碳數丨〜7之直鏈或支鏈烷氧基、羧 酸、或乙醯丙酉同基,L為含有氮、氧、或麟之配位性有 機化合物,η為0〜9之整數) McXd.aH20 (3) (式中’ Μ為3B族元素,X為鹵素原子、頌酸或硫酸,於 〇 Χ為函素原子或硝酸時,c為l、d為3,於Χ為硫酸時,'c 為2、d為3、a為0〜9之整數) 溶解於滞點為not以上之供電子性有機溶劑、或含 有沸點為uot以上之供電子性有機溶劑作為主成分之 混合有機溶劑而成上述有機鋅化合物與有機3雜元素化 合物之合計濃度為4〜12質量%之範圍的溶液中,以相對 於上述有機鋅化合物之莫耳比成為〇 4〜〇 8之範圍之方式 添加水,而至少將上述有機鋅化合物部分水解。 ^ 33. 如請求項32之氧化鋅薄膜之製造方法,其中含有水装氣 之惰性氣體環境係藉由在大氣壓或加壓下將水蒸氣供給 147876.doc 201109279 至基板表面附近而形成。 34.如請求項32之氧化鋅薄膜之製造方法,其中基板表面之 加熱溫度為400。(:以下。 35·如請求項33或34之氧化辞薄膜之製造方法,其中上述水 蒸氣之供給係以水相對於所供給之上述組合物中之鋅的 莫耳比成為0.1〜5之範圍之方式來進行。 其 36. 如請求項29至35中任一瑁少气儿从“ 、之乳化辞溥膜之製造方法, 中上述供電子性有機溶劑係彿點為23〇t以下。 其 37. 如請求項29至36中任-項之氧化辞薄膜之製造方法, 中上述有機鋅化合物為二乙基辞。 其 38. 如請求項29至37中任—項之1化鋅薄膜之製造方法, 中上述通式(2)之有機3B族元素化合物為三甲基姻。 其 39_如請求項29至37中任一瑁夕汽儿从一 項之氧化辞溥膜之製造方法, 中上述通式(2)之有機3B族元辛化人私炎一 __ 凡京化合物為三乙醯丙酮鋁、 三乙醯丙酮鎵、三乙醯丙_銦。 40. 如請求項29至37中任—j苜少好 員之礼化辞薄膜之製造方法,其 中上述有機3Β族元素化人队法〆 匕σ物為氣化鋁、氯化鎵、氯化 姻。 41. 如請求項29至40中任_珀令与 項之氧化鋅薄膜之製造方法,其 中上述供電子性有機溶劑為 W馬1,2-二乙氧基乙烷。 42_如請求項29至40中任—馆+ &amp; 項之#1化鋅薄膜之製造方法,其 中上述混合有機溶劑為1。 Μ馬1,2-二乙氧基乙烷與四氫呋喃之 混合溶劑。 43_ 一種抗靜電薄膜,其包含 I 3使用如請求項29至42中任一項 147876.doc -10· 201109279 之製造方法而製造之氧化鋅薄膜。 44· 一種紫外線截斷薄膜,其包含使用如請求項29至42中任 一項之製造方法而製造之氧化辞薄膜。 仏-種透明電極薄膜’其包含使用如請求項29至42中任一 項之製造方法而製造之氧化鋅薄膜。 46. -種氧化鋅薄膜形成用組合物,其特徵在於:在具有供 電子性之有機溶劑中含有下述通式⑴所示之有機辞化合 Ο Ο 物以及下述通式(2〇)所示之有機職元素化合物,且上 述有機3Β族元素化合物相對於上述有機辞化合物之莫耳 比為0.001〜0·3之範圍; R^Zn-R^l) (式中,R為碳數1〜7之直鏈或支鏈烷基) (20) R20 - ^i—R30 4 0 R (式中,Μ為3B族元素,r2、r3g及獨立為氫或碳數 1〜7之直鏈或支鏈烷基;)。 47.如請求項46之組合物,其中上述汕族元素為b、八卜^ 或In。 48. 如1請求項46或47之組合物,其中上述有機辞化合物中, R1為乙基,上述有機3B族元素化合物中,M為鋁,r2〇、 R30及R4G均為乙基。 49. 如請求項45或46之組合物,其中上述有機鋅化合物中, R為乙基,上述有機3B族元素化合物中,μ為鎵,r2〇、 R30及R40均為甲基。 147876.doc -11 - 201109279 50.如請求項46或47之4a八榀甘士 L A 。物,其中上述有機辞化合物中 R為乙基,上述有機 中, R3〇;Sd4〇^ 孩兀素化合物中,Μ為銦,r20 R及R40均為甲基。 K 、 其中上述有機鋅化 15質量%以下。 其中上述有機溶劑 51.如請求項46至50中任-項之組合物, 合物與有機3B族化合物之合計濃度為 52·如請求項50至51中任—項之組合物, 為二異丙驗。 53. 一種掺雜有3B族元素之氧化鋅薄膜之製造方法,其 在於:在大氣壓或加壓下、於水存在之環境下 3〇〇t以下之基板溫度下’將如請求項5〇至52中任—項 之組合物錄於基板表面,㈣成摻財3b 、 化鋅薄膜。 之虱 54. 如請求項53之製造方法,其中上述組合物之喷塗係將组 合物自噴霧嘴以液滴大小成為卜3〇 μηι之範圍之方式噴 出’且將喷霧嘴與基板之距離設為5〇 cm以内來進行。 55. 如請求項53或54之製造方法,其中進行喷塗之環境溫度 為40°C以下。 56.如請求項53至55中任一項之製造方法,其中上述氧化鋅 薄膜對可見光具有80%以上之平均透射率,且表面電阻 為Ιχίο5 Ω/□以下。 147876.doc •12-201109279 VII 1. 、, the scope of application for patents: - for the production of zinc oxide film, add water to S2, at least the next, ten? It comprises the product obtained in the solution S1 or the solution. The compound of the organic zinc compound is at least partially hydrolyzed and the product is obtained. The above solution 81 is a substance, a solution, and an organic zinc represented by the following formula (1). The solution S2 is obtained by the following general formula (1), m, s々, phonological compound, and At least one of the steroid and the steroid compound represented by the above formula (2) or the following formula (3) is dissolved in an electron-donating organic solvent: R^Zn-R1 (1) (wherein Rl is a linear or branched alkyl group having a carbon number of 1 to 7) McXd.aH2〇(7) (wherein Μ is a 3B group of genus' χ is a dentate atom, citric acid or sulfuric acid, and is a dentate atom or stone. In the case of erythric acid, (4) and d are 3, when X is sulfuric acid, 'c is 2, d is 3, and a is an integer of 〇~9. r8-~m~r3 * (5) η (3) 〇 (where, The MWB group element, R2, R3, and R4 are independently hydrogen, a linear or branched alkyl group having a carbon number W, a linear or branched alkoxy group having a carbon number of 1 to 7, a decanoic acid group, or an acetoacetone group. Further, L is a coordinating organic compound containing nitrogen, oxygen or phosphorus, and η is 0~ 9 integer). 2. The composition of claim 1, wherein the solution 81 is added in such a manner that the molar ratio of the organozinc compound is in the range of 0.6 to 0.9. The composition of claim 2, which comprises a solution obtained by dissolving the above-mentioned product separated from the above organic solvent in a thin 貘 147876.doc 201109279 organic solvent which is different from the above-mentioned electron-donating organic solvent. 4. 12% by mass of the composition of claim 3 wherein the concentration of the above product is in the range of 3. 5. The composition solvent of any one of claims 2 to 4 is tetrahydrofuran. The composition of any one of claims 3 to 5 is an organic solvent of 1,4-second. Wherein the above-mentioned electron donating property has the composition of the above-mentioned film forming claim 1, which is used for the production of a doped oxidized film, wherein the above-mentioned solution is in the middle of the above-mentioned three-element compound relative to the above-mentioned organic compound compound. The ear ratio is a ratio of 0.005 to 0.3. 8. The composition of claim 7 wherein the product comprises a hydrolysate of the above compound of the group 3b. 9. The composition of claim 7 or 8, wherein the molar ratio of the water added to the total of the organic compound and the 3B element compound is in the range of 〇, 4 to 0.9. A composition for the production of a doped oxidized film, which comprises the composition according to any one of claims 1 to 5, which is obtained by adding water to the solution S 2 as described above. A product obtained by adding at least one compound of the group 3B element represented by the formula (2) or the formula (3) in such a manner that the molar ratio of the organozinc compound is 〇·〇〇5 to 0.3, McXd.aH20 (2) (In the formula, Μ is a 3 B group' X is a halogen atom, a sulphuric acid or a sulfuric acid. When χ is a halogen atom or nitric acid, C is 1, d is 3, and when X is sulfuric acid, C is 2, d is 3, a is an integer from 0 to 9) 147876.doc 201109279 R Xuan~~ϊ?容I *(L)a (8) R4 (where M is a 3B element 'R2, R3, R4 are independent a hydrogen or a linear or branched alkyl group having a carbon number of 1 to 7, a linear or branched alkoxy group having a carbon number of 1 to 7, a buffered acid group, or an ethyl acetonide group, and further L is a nitrogen, oxygen or phosphorus. The coordinating organic compound, η is an integer from 0 to 9). The composition of claim 9, wherein the product is substantially free of the hydrolyzate of the above-mentioned compound of the 3 steroid element. The composition of claim 9 or 10, wherein the amount of water added to the above solution (4) is in the range of 〇 4 to 〇 9 with respect to the molar ratio of the above organic compound. The content of the organozinc compound represented by the formula (1) in the above composition, wherein the content of the organozinc compound represented by the formula (1) is 0.5% by mass or less. 13. The composition according to any one of claims 7 to 12, which comprises a solution which is obtained by using the above-mentioned product 〇: = the above-mentioned electron-donating organic solvent to form a film-forming organic/encapitant. 14. The composition of any one of claims 7 to 13, which has a degree of from 1 to 30% by mass. . Concentration of the seat 15. According to the composition of claim 1, the power supply of the above is _ above = raw; 1 the organic solvent is more than the above, the μ point is i, the electronic organic solvent is used as the agent: the above solution si The amount of c dissolved in the above-mentioned solvent in the range of the general organic machine:::: TM is relative to the above-mentioned molar ratio of 147876.doc 201109279 0.4 to 0.8. 16. 17. 18. 19. 20. A composition according to the composition of claim 15 which is added in a ratio of 0.005 to 〇丨 with respect to the molar ratio of the above organozinc compound. Obtained as an organic Group 3B element compound represented by formula (2): Ra-M-R3 I ♦ (L) n (2) R4 (wherein Μ is a group 3B element' R2, r3, and R4 are independently hydrogen and carbon a straight or branched alkyl group, a linear or branched alkoxy group having a carbon number of 1 to 7, a carboxylic acid, or an acetoacetone group, and L is a coordinating organic group containing nitrogen, oxygen, or phosphorus. The compound, η is an integer from 0 to 9). The composition of claim 1, wherein the electron-donating organic solvent is an electron-donating organic solvent having a boiling point of 110 ° C or higher, or a mixed organic solvent containing an electron-donating organic solvent having a boiling point of 110 ° C or more as a main component. The solution S2 is a solution in which the organic zinc compound and the organic 3B group element are dissolved in a total concentration of 4 to 12% by mass; the amount of water added is 〇4 in terms of the molar ratio with respect to the above organic compound. ~0.8 range. The composition of any one of Claims 15 to 17, wherein the above-mentioned electron-donating organic solvent is a composition having a boiling point of 23 or less. The compound of any one of claims 1 to 19, wherein the above-mentioned organic zinc &amp; The composition of any one of claims 1 to 14, wherein the electron-donating organic solvent is 1,4-second. 22. The combination of any one of claims 16 to 21 The composition of the organic group 3B element of the above formula (III) is a composition of any one of claims 16 to 21, wherein the organic group 3B element compound of the above formula (?) is triethyl醯Aluminum acetonide, triethyl hydrazine propyl gallium, gamma gallium, and urethane. 〇〇 24. The 70-mer compound of any one of claims 16 to 21 is aluminum chloride, gallium chloride, indium chloride 25· The composition of any one of claims 16 to 21, wherein the electron donating organic agent is 1,2-diethoxyethane. The composition of any one of 5 to 24, wherein the mixed organic solvent is a mixed solvent of 1,2-diethoxyethane and tetrahydrofuran. 27. A method for producing a zinc oxide film, comprising: The composition of the above-mentioned item is applied to the surface of the substrate, and then the obtained coating film is heated at a temperature of WC or lower to form an oxidized film or an oxidized film doped with a group 3B element. According to the manufacturing method of claim 27, the emulsified film of the basin has an average transmittance of 80% or more for visible light. 29. A method for producing a zinc oxide film, the flying zinc oxide film has a light transmittance of 80/ό or more. The average transmittance is 4 τ and the volume resistivity is less than 8 χΐ〇 2. The manufacturing method includes performing at least the following operations: applying the following compositions A and MC to the surface of the substrate under an inert gas atmosphere, and then The obtained coating film is heated; 147876.doc 201109279 Composition A: The following compound comprises a product obtained by dissolving an organic compound of the following formula at a boiling point of 11 (TC or higher) = organic solvent, or an electron-donating material having a point of (10) or more; a mixed organic solvent as a main component is formed in a solution of 4 to 12 mass% in a solution of the above-mentioned organozinc compound. Adding water in such a manner as to be in the range of 0.4 to 0.8, and at least partially hydrolyzing the above-mentioned compound, W-Zn-Ri (1) (wherein R is a linear or branched alkyl wide composition B of carbon number 7 The composition is added to the above-mentioned composition A, and the organic 3B group compound represented by the following formula (2) is added in such a manner that the molar ratio of the organic compound is 〇〇〇5 to 〇". And R3 ^4 · (U η (2) (wherein, Μ is a 3 steroid element, r2, r3, ^ are independently chlorine, a straight or branched alkyl group having a carbon number w, and a carbon number of 1 to 7 a linear or branched alkoxy group, a carboxylic acid, or a propyl group, L is a coordinating organic compound containing nitrogen, oxygen, or a dish, and η is an integer of 〇~9; Composition C: This combination The product contains the product obtained in the following manner: an organozinc compound represented by the following formula (1), W-Zn-R1 (1) 147876.doc 201109 279 (wherein R1 is a linear or branched alkyl group of carbon number 7), and the following formula (2) is a ratio of 莫5 to 〇〇9 of the above organic compound; (7) The organic steroidal compound R2~M*~ R3 R4 (L) (2) (wherein Μ is a group 3B element, R2, R3, and ruler 4 are independent of chlorine, carbon number 7 or a branched alkyl group, a linear or branched (tetra)oxy group 1 Ο Ο acid or an acetoacetone group, and L is a coordinating organic compound containing nitrogen, oxygen, or lin, and η is 0 to 9 Integer) McXd«aH20 (3) (In the formula, 'Μ is a 3B element' X is a crypto-atom, a sulphuric acid or a sulphuric acid, when X is a sulphate atom or a sour acid '..., 呜 3' In the case of sulfuric acid, c is 2, d is 3, and a is an integer of 〇~9.) It is dissolved in an electron-donating organic solvent having a boiling point of 11 〇t or more, or an electron-donating organic solvent having a boiling point of UOt or more as a main component. Mixing an organic solvent to form a solution having a total concentration of the above organozinc compound and an organic grouping compound in a range of 4 to 12% by mass, relative to the above-mentioned organic compound Water becomes 〇.4~0.8 scope of the embodiment, the speech of the organic compound at least partially hydrolyzed. A method for producing a zinc oxide film according to claim 29, wherein the inert gas contains water vapor per site. The method for producing the product of the invention, wherein the inert gas containing water vapor has a relative humidity of 2 to 15%. 32. A method for producing a chemical film, wherein the zinc oxide thin film has a flat transmittance of 80% or more and a small volumetric electric power rate (10) for a visible light device 147876.doc 201109279, and the manufacturing method comprises a composition of a composition of A1. , B or C in the gas; in the inert gas atmosphere of the steamed composition A: sprayed on the surface of the heated substrate; : combination t contains the product obtained as follows: (d) the following two formula: The compound is dissolved in a solution having a concentration of 4 to 12 or a mixture of a solvent having a boiling point of (10) or more, or a mixed organic solvent having a boiling point of (10) or more and an electron-donating organic solvent as a main component;斟 斟 L L + ' 軏 軏 相对 相对 相对 相对 相对 相对 相对 相对 相对 相对 相对 相对 相对 相对 相对 相对 相对 相对 相对 相对 相对 相对 相对 相对 相对 相对 相对 相对 相对 相对 相对 相对 相对 相对 相对 相对 相对 相对 相对 相对 相对 相对 相对-Zn-R丨(1) (wherein R1 is a linear or branched alkyl group having a carbon number of i to 7); Composition B: The composition is in the above composition A in relation to the above-mentioned organic zinc The molar ratio of the compound becomes 0.005~〇 The ratio of the organic group 3B element compound represented by the following formula (2) is added in a ratio of R3 I * (L) η (2) R4 (wherein, VI) is a group 3B element, R2, R3, R4 a linear or branched alkyl group independently of hydrogen, having a carbon number of 1 to 7, a linear or branched alkoxy group having a carbon number of 1 to 7, a buffered acid, or an acetonitrile acetone group 'L containing nitrogen, oxygen, or a coordinating organic compound of phosphorus, η is an integer of 0 to 9); Composition C: 147876.doc 201109279 The composition contains a product obtained by: an organic zinc represented by the following general formula (1) a compound, R^Zn-R^l) (wherein R1 is a linear or branched alkyl group having 1 to 7 carbon atoms), and the molar ratio of the above organic compound is 〇〇〇5 to 〇〇9 In the proportion of the organic group 3B element compound I, * α) η (2) represented by the following formula (2) or (3) (wherein, Μ is a 3 steroid element, and R 2 , R 3 , and R 4 are independently hydrogen and carbon number 丨a straight or branched alkyl group, a linear or branched alkoxy group having a carbon number of 丨7, a carboxylic acid, or an acetamidine group, and L is a ligand containing nitrogen, oxygen, or arsenic. Organic compound, η is an integer from 0 to 9 McXd.aH20 (3) (wherein Μ is a Group 3B element, X is a halogen atom, citric acid or sulfuric acid, and when 〇Χ is a functional atom or nitric acid, c is l, d is 3, when hydrazine is sulfuric acid , 'c is 2, d is 3, and a is an integer of 0 to 9.) An organic solvent which is dissolved in a stagnation point of not more than or more, or a mixed organic compound containing an electron-donating organic solvent having a boiling point of uot or more as a main component The solvent is added to the solution in which the total concentration of the organic zinc compound and the organic trihetero compound is in the range of 4 to 12% by mass, and is added so as to be in the range of 〇4 to 〇8 with respect to the molar ratio of the organic zinc compound. Water, at least partially hydrolyzed the above organozinc compound. ^ 33. The method of producing a zinc oxide film according to claim 32, wherein the inert gas atmosphere containing water is formed by supplying water vapor at 147876.doc 201109279 to the vicinity of the surface of the substrate under atmospheric pressure or pressure. 34. The method of producing a zinc oxide film according to claim 32, wherein the substrate surface has a heating temperature of 400. The method of producing the oxidized film according to claim 33 or 34, wherein the supply of the water vapor is in a range of 0.1 to 5 with respect to the molar ratio of zinc in the supplied composition. 36. According to any one of claims 29 to 35, the method for producing an emulsified sputum film of the above-mentioned emulsified sputum film is 23 〇t or less. 37. The method for producing a oxidized film according to any one of claims 29 to 36, wherein the organozinc compound is diethyl. 38. The zinc film according to any one of claims 29 to 37. In the production method, the organic group 3B element compound of the above formula (2) is a trimethyl group. 39_ The method for producing an oxidized word film according to any one of claims 29 to 37, The organic 3B group of the above formula (2) is a compound of acetylated human inflammatory __ 凡 京 三 三 化合物 化合物 化合物 40 40 40 40 40 40 40 40 40 40 40 40 40 40 40 40 40 40 40 40 40 40 40 37中任—J制造 苜 好 好 之 之 之 薄膜 薄膜 , , , , , , , , The squadron of the squadron is vaporized aluminum, gallium chloride or chlorinated. 41. The method for producing a zinc oxide film according to any of claims 29 to 40, wherein the above-mentioned electron-donating organic solvent The method for producing a #1 zinc film according to any one of claims 29 to 40, wherein the mixed organic solvent is 1. A mixed solvent of 1,2-diethoxyethane and tetrahydrofuran. 43_ An antistatic film comprising I 3 manufactured by the method of manufacturing according to any one of claims 29 to 42 147876.doc -10·201109279 A zinc oxide film. 44. An ultraviolet cut film comprising a oxidized film produced by the method of any one of claims 29 to 42. 仏-type transparent electrode film comprising use as claimed in claims 29 to 42 A zinc oxide thin film produced by the method of any one of the inventions, wherein the composition for forming a zinc oxide thin film contains an organic word represented by the following general formula (1) in an organic solvent having electron donating properties. Compound Ο 以及 and the following formula ( 2)) the organic element compound shown, and the molar ratio of the above organic 3 lanthanum element compound to the above organic compound is in the range of 0.001 to 0.3; R^Zn-R^l) (wherein, R a linear or branched alkyl group having a carbon number of 1 to 7) (20) R20 - ^i - R30 4 0 R (wherein Μ is a Group 3B element, r2, r3g and independently hydrogen or a carbon number of 1 to 7) A linear or branched alkyl group;). The composition of claim 46, wherein the steroid element is b, VIII or In. The composition of claim 46 or 47, wherein, in the above organic compound, R1 is an ethyl group, and in the above organic group 3B element compound, M is aluminum, and r2〇, R30 and R4G are all ethyl groups. 49. The composition of claim 45 or 46, wherein, in the above organozinc compound, R is an ethyl group, and in the above organic group 3B element compound, μ is gallium, and r2〇, R30 and R40 are each a methyl group. 147876.doc -11 - 201109279 50. As requested in item 46 or 47 of 4a gossip L A. In the above organic compound, R is an ethyl group, and in the above organic compound, R3〇; in the Sd4〇^, a compound, the ruthenium is indium, and the r20 R and R40 are each a methyl group. K, wherein the above organic zincation is 15% by mass or less. Wherein the above-mentioned organic solvent is 51. The total concentration of the composition of any of the claims 46 to 50 and the organic 3B compound is 52. The composition of any one of claims 50 to 51 is two different. C. 53. A method for producing a zinc oxide film doped with a Group 3B element, which is to be subjected to a substrate temperature of 3 〇〇t or less under atmospheric pressure or under pressure in the presence of water. The composition of the item 52 is recorded on the surface of the substrate, and (4) is a film of the doped 3b and zinc. The method of claim 53, wherein the spraying of the composition ejects the composition from the spray nozzle in a range of droplet size to the range of the droplets and the distance between the spray nozzle and the substrate Set to within 5 〇cm. 55. The method of manufacturing of claim 53 or 54, wherein the ambient temperature at which the spraying is performed is 40 ° C or less. The manufacturing method according to any one of claims 53 to 55, wherein the zinc oxide film has an average transmittance of 80% or more for visible light and a surface resistance of Ιχίο5 Ω/□ or less. 147876.doc •12-
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JP2009197052A JP5641717B2 (en) 2009-08-27 2009-08-27 Composition for producing doped zinc oxide thin film and method for producing doped zinc oxide thin film using the same
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