JP5756272B2 - Composition for producing zinc oxide thin film and composition for producing doped zinc oxide thin film - Google Patents
Composition for producing zinc oxide thin film and composition for producing doped zinc oxide thin film Download PDFInfo
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- JP5756272B2 JP5756272B2 JP2010235478A JP2010235478A JP5756272B2 JP 5756272 B2 JP5756272 B2 JP 5756272B2 JP 2010235478 A JP2010235478 A JP 2010235478A JP 2010235478 A JP2010235478 A JP 2010235478A JP 5756272 B2 JP5756272 B2 JP 5756272B2
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- Prior art keywords
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- compound
- thin film
- zinc oxide
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- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 title claims description 164
- 239000010409 thin film Substances 0.000 title claims description 87
- 239000011787 zinc oxide Substances 0.000 title claims description 82
- 239000000203 mixture Substances 0.000 title claims description 50
- 150000001875 compounds Chemical class 0.000 claims description 101
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 58
- 239000002904 solvent Substances 0.000 claims description 29
- HQWPLXHWEZZGKY-UHFFFAOYSA-N diethylzinc Chemical compound CC[Zn]CC HQWPLXHWEZZGKY-UHFFFAOYSA-N 0.000 claims description 28
- 239000003960 organic solvent Substances 0.000 claims description 28
- 150000003752 zinc compounds Chemical class 0.000 claims description 28
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical group OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 22
- 125000004432 carbon atom Chemical group C* 0.000 claims description 22
- 125000000217 alkyl group Chemical group 0.000 claims description 19
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 17
- 238000004519 manufacturing process Methods 0.000 claims description 13
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical group O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 11
- 229910017604 nitric acid Inorganic materials 0.000 claims description 11
- 125000005843 halogen group Chemical group 0.000 claims description 10
- 239000001257 hydrogen Substances 0.000 claims description 10
- 229910052739 hydrogen Inorganic materials 0.000 claims description 10
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 8
- 229910052760 oxygen Inorganic materials 0.000 claims description 8
- 239000001301 oxygen Substances 0.000 claims description 8
- 230000003301 hydrolyzing effect Effects 0.000 claims description 7
- 229910052757 nitrogen Inorganic materials 0.000 claims description 7
- 229910052698 phosphorus Inorganic materials 0.000 claims description 7
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 5
- 150000002894 organic compounds Chemical class 0.000 claims description 5
- 239000011574 phosphorus Substances 0.000 claims description 5
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 4
- 125000005595 acetylacetonate group Chemical group 0.000 claims description 4
- 125000003545 alkoxy group Chemical group 0.000 claims description 4
- 125000002843 carboxylic acid group Chemical group 0.000 claims description 4
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 2
- 239000000243 solution Substances 0.000 description 55
- 239000010408 film Substances 0.000 description 40
- 239000000758 substrate Substances 0.000 description 34
- 238000000576 coating method Methods 0.000 description 30
- 239000000047 product Substances 0.000 description 29
- 239000011248 coating agent Substances 0.000 description 25
- 238000000034 method Methods 0.000 description 22
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 20
- 238000010438 heat treatment Methods 0.000 description 20
- 239000012298 atmosphere Substances 0.000 description 19
- 238000002834 transmittance Methods 0.000 description 16
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 15
- 239000007921 spray Substances 0.000 description 14
- 239000011521 glass Substances 0.000 description 12
- 238000004528 spin coating Methods 0.000 description 12
- 230000015572 biosynthetic process Effects 0.000 description 11
- 238000006243 chemical reaction Methods 0.000 description 11
- 238000003756 stirring Methods 0.000 description 11
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 10
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 10
- 238000006460 hydrolysis reaction Methods 0.000 description 9
- -1 sec-hexyl group Chemical group 0.000 description 9
- LZDKZFUFMNSQCJ-UHFFFAOYSA-N 1,2-diethoxyethane Chemical compound CCOCCOCC LZDKZFUFMNSQCJ-UHFFFAOYSA-N 0.000 description 8
- 229910052738 indium Inorganic materials 0.000 description 8
- 238000005118 spray pyrolysis Methods 0.000 description 8
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 7
- 238000001035 drying Methods 0.000 description 7
- 230000007062 hydrolysis Effects 0.000 description 7
- 239000002994 raw material Substances 0.000 description 7
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 238000003618 dip coating Methods 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 6
- 239000012528 membrane Substances 0.000 description 6
- GETQZCLCWQTVFV-UHFFFAOYSA-N trimethylamine Chemical compound CN(C)C GETQZCLCWQTVFV-UHFFFAOYSA-N 0.000 description 6
- 239000007795 chemical reaction product Substances 0.000 description 5
- 229910001873 dinitrogen Inorganic materials 0.000 description 5
- 150000002431 hydrogen Chemical class 0.000 description 5
- 229920003023 plastic Polymers 0.000 description 5
- 239000004033 plastic Substances 0.000 description 5
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 4
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical group OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- 229960004132 diethyl ether Drugs 0.000 description 4
- 238000001914 filtration Methods 0.000 description 4
- 238000001228 spectrum Methods 0.000 description 4
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 238000005481 NMR spectroscopy Methods 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- SBZXBUIDTXKZTM-UHFFFAOYSA-N diglyme Chemical compound COCCOCCOC SBZXBUIDTXKZTM-UHFFFAOYSA-N 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 239000003446 ligand Substances 0.000 description 3
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 3
- 230000009257 reactivity Effects 0.000 description 3
- ODHXBMXNKOYIBV-UHFFFAOYSA-N triphenylamine Chemical compound C1=CC=CC=C1N(C=1C=CC=CC=1)C1=CC=CC=C1 ODHXBMXNKOYIBV-UHFFFAOYSA-N 0.000 description 3
- 238000001291 vacuum drying Methods 0.000 description 3
- 239000011701 zinc Substances 0.000 description 3
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229920000298 Cellophane Polymers 0.000 description 2
- XTHFKEDIFFGKHM-UHFFFAOYSA-N Dimethoxyethane Chemical compound COCCOC XTHFKEDIFFGKHM-UHFFFAOYSA-N 0.000 description 2
- YNQLUTRBYVCPMQ-UHFFFAOYSA-N Ethylbenzene Chemical compound CCC1=CC=CC=C1 YNQLUTRBYVCPMQ-UHFFFAOYSA-N 0.000 description 2
- JLTDJTHDQAWBAV-UHFFFAOYSA-N N,N-dimethylaniline Chemical compound CN(C)C1=CC=CC=C1 JLTDJTHDQAWBAV-UHFFFAOYSA-N 0.000 description 2
- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 description 2
- OFBQJSOFQDEBGM-UHFFFAOYSA-N Pentane Chemical compound CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 2
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 2
- 229910000147 aluminium phosphate Chemical group 0.000 description 2
- 150000001412 amines Chemical class 0.000 description 2
- 239000002585 base Substances 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- GGSUCNLOZRCGPQ-UHFFFAOYSA-N diethylaniline Chemical compound CCN(CC)C1=CC=CC=C1 GGSUCNLOZRCGPQ-UHFFFAOYSA-N 0.000 description 2
- 239000004210 ether based solvent Substances 0.000 description 2
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 2
- CHPZKNULDCNCBW-UHFFFAOYSA-N gallium nitrate Chemical compound [Ga+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O CHPZKNULDCNCBW-UHFFFAOYSA-N 0.000 description 2
- UPWPDUACHOATKO-UHFFFAOYSA-K gallium trichloride Chemical compound Cl[Ga](Cl)Cl UPWPDUACHOATKO-UHFFFAOYSA-K 0.000 description 2
- 125000003187 heptyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- UKCIUOYPDVLQFW-UHFFFAOYSA-K indium(3+);trichloride;tetrahydrate Chemical compound O.O.O.O.Cl[In](Cl)Cl UKCIUOYPDVLQFW-UHFFFAOYSA-K 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 2
- 125000004491 isohexyl group Chemical group C(CCC(C)C)* 0.000 description 2
- 125000001972 isopentyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])C([H])([H])* 0.000 description 2
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 125000001971 neopentyl group Chemical group [H]C([*])([H])C(C([H])([H])[H])(C([H])([H])[H])C([H])([H])[H] 0.000 description 2
- 125000000962 organic group Chemical group 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- WYURNTSHIVDZCO-SVYQBANQSA-N oxolane-d8 Chemical compound [2H]C1([2H])OC([2H])([2H])C([2H])([2H])C1([2H])[2H] WYURNTSHIVDZCO-SVYQBANQSA-N 0.000 description 2
- 125000001147 pentyl group Chemical group C(CCCC)* 0.000 description 2
- 239000002985 plastic film Substances 0.000 description 2
- 229920006255 plastic film Polymers 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 239000004417 polycarbonate Substances 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- 238000005070 sampling Methods 0.000 description 2
- 125000002914 sec-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 2
- 125000001973 tert-pentyl group Chemical group [H]C([H])([H])C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 2
- ILJSQTXMGCGYMG-UHFFFAOYSA-N triacetic acid Chemical compound CC(=O)CC(=O)CC(O)=O ILJSQTXMGCGYMG-UHFFFAOYSA-N 0.000 description 2
- YFNKIDBQEZZDLK-UHFFFAOYSA-N triglyme Chemical compound COCCOCCOCCOC YFNKIDBQEZZDLK-UHFFFAOYSA-N 0.000 description 2
- MCULRUJILOGHCJ-UHFFFAOYSA-N triisobutylaluminium Chemical compound CC(C)C[Al](CC(C)C)CC(C)C MCULRUJILOGHCJ-UHFFFAOYSA-N 0.000 description 2
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 2
- RIOQSEWOXXDEQQ-UHFFFAOYSA-N triphenylphosphine Chemical compound C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 RIOQSEWOXXDEQQ-UHFFFAOYSA-N 0.000 description 2
- YZYKBQUWMPUVEN-UHFFFAOYSA-N zafuleptine Chemical compound OC(=O)CCCCCC(C(C)C)NCC1=CC=C(F)C=C1 YZYKBQUWMPUVEN-UHFFFAOYSA-N 0.000 description 2
- VFRGATWKSPNXLT-UHFFFAOYSA-N 1,2-dimethoxybutane Chemical compound CCC(OC)COC VFRGATWKSPNXLT-UHFFFAOYSA-N 0.000 description 1
- LEEANUDEDHYDTG-UHFFFAOYSA-N 1,2-dimethoxypropane Chemical compound COCC(C)OC LEEANUDEDHYDTG-UHFFFAOYSA-N 0.000 description 1
- DURPTKYDGMDSBL-UHFFFAOYSA-N 1-butoxybutane Chemical compound CCCCOCCCC DURPTKYDGMDSBL-UHFFFAOYSA-N 0.000 description 1
- ZFFMLCVRJBZUDZ-UHFFFAOYSA-N 2,3-dimethylbutane Chemical group CC(C)C(C)C ZFFMLCVRJBZUDZ-UHFFFAOYSA-N 0.000 description 1
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 1
- XNDZQQSKSQTQQD-UHFFFAOYSA-N 3-methylcyclohex-2-en-1-ol Chemical compound CC1=CC(O)CCC1 XNDZQQSKSQTQQD-UHFFFAOYSA-N 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- QELRBSHFTSRRLI-UHFFFAOYSA-N CC[Zn]CC.CCCCCC Chemical compound CC[Zn]CC.CCCCCC QELRBSHFTSRRLI-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- ZAFNJMIOTHYJRJ-UHFFFAOYSA-N Diisopropyl ether Chemical compound CC(C)OC(C)C ZAFNJMIOTHYJRJ-UHFFFAOYSA-N 0.000 description 1
- QMMFVYPAHWMCMS-UHFFFAOYSA-N Dimethyl sulfide Chemical compound CSC QMMFVYPAHWMCMS-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- 229920001328 Polyvinylidene chloride Polymers 0.000 description 1
- ZOIORXHNWRGPMV-UHFFFAOYSA-N acetic acid;zinc Chemical compound [Zn].CC(O)=O.CC(O)=O ZOIORXHNWRGPMV-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 150000001338 aliphatic hydrocarbons Chemical class 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- JGDITNMASUZKPW-UHFFFAOYSA-K aluminium trichloride hexahydrate Chemical compound O.O.O.O.O.O.Cl[Al](Cl)Cl JGDITNMASUZKPW-UHFFFAOYSA-K 0.000 description 1
- 229940009861 aluminum chloride hexahydrate Drugs 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 1
- 239000012752 auxiliary agent Substances 0.000 description 1
- SIPUZPBQZHNSDW-UHFFFAOYSA-N bis(2-methylpropyl)aluminum Chemical compound CC(C)C[Al]CC(C)C SIPUZPBQZHNSDW-UHFFFAOYSA-N 0.000 description 1
- VEWFZHAHZPVQES-UHFFFAOYSA-N boron;n,n-diethylethanamine Chemical compound [B].CCN(CC)CC VEWFZHAHZPVQES-UHFFFAOYSA-N 0.000 description 1
- LRJRPHROCLHMHK-UHFFFAOYSA-N boron;n,n-dimethylmethanamine Chemical compound [B].CN(C)C LRJRPHROCLHMHK-UHFFFAOYSA-N 0.000 description 1
- UWTDFICHZKXYAC-UHFFFAOYSA-N boron;oxolane Chemical compound [B].C1CCOC1 UWTDFICHZKXYAC-UHFFFAOYSA-N 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 238000004440 column chromatography Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000018044 dehydration Effects 0.000 description 1
- 238000006297 dehydration reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- POLCUAVZOMRGSN-UHFFFAOYSA-N dipropyl ether Chemical compound CCCOCCC POLCUAVZOMRGSN-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000005038 ethylene vinyl acetate Substances 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229940044658 gallium nitrate Drugs 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- FTLHORLYDROOSU-UHFFFAOYSA-N indium(3+);trinitrate;pentahydrate Chemical compound O.O.O.O.O.[In+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O FTLHORLYDROOSU-UHFFFAOYSA-N 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical compound II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 238000000655 nuclear magnetic resonance spectrum Methods 0.000 description 1
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 239000003208 petroleum Substances 0.000 description 1
- 239000011941 photocatalyst Substances 0.000 description 1
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920006267 polyester film Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 239000011112 polyethylene naphthalate Substances 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 239000005033 polyvinylidene chloride Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 1
- 239000011541 reaction mixture Substances 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- CMHHITPYCHHOGT-UHFFFAOYSA-N tributylborane Chemical compound CCCCB(CCCC)CCCC CMHHITPYCHHOGT-UHFFFAOYSA-N 0.000 description 1
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 1
- VOITXYVAKOUIBA-UHFFFAOYSA-N triethylaluminium Chemical compound CC[Al](CC)CC VOITXYVAKOUIBA-UHFFFAOYSA-N 0.000 description 1
- LALRXNPLTWZJIJ-UHFFFAOYSA-N triethylborane Chemical compound CCB(CC)CC LALRXNPLTWZJIJ-UHFFFAOYSA-N 0.000 description 1
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 1
- OTRPZROOJRIMKW-UHFFFAOYSA-N triethylindigane Chemical compound CC[In](CC)CC OTRPZROOJRIMKW-UHFFFAOYSA-N 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- 238000000870 ultraviolet spectroscopy Methods 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
- 239000004246 zinc acetate Substances 0.000 description 1
Landscapes
- Inorganic Compounds Of Heavy Metals (AREA)
Description
大気圧付近の圧力下、かつ３００℃以下の温度で加熱することにより、可視光線に対して高い透過率を有する透明酸化亜鉛薄膜を形成することができる有機亜鉛化合物を原料として調製した、発火性がなく取扱いが容易な酸化亜鉛薄膜製造用組成物および３Ｂ族元素をドープした酸化亜鉛薄膜製造用組成物に関する。 Prepared using as raw material an organic zinc compound that can form a transparent zinc oxide thin film having a high transmittance for visible light by heating at a pressure close to atmospheric pressure and at a temperature of 300 ° C. or lower. The present invention relates to a composition for producing a zinc oxide thin film that is easy to handle and a composition for producing a zinc oxide thin film doped with a group 3B element.
可視光線に対して高い透過性を有する透明な酸化亜鉛薄膜や３Ｂ族元素がドープされた酸化亜鉛薄膜は、光触媒膜、紫外線カット膜、赤外線反射膜、ＣＩＧＳ太陽電池のバッファ層、色素増感太陽電池の電極膜、帯電防止膜等に使用され、幅広い用途を持つ。 Transparent zinc oxide thin film with high transparency to visible light and zinc oxide thin film doped with 3B group element are photocatalyst film, ultraviolet cut film, infrared reflective film, CIGS solar cell buffer layer, dye-sensitized sun Used for battery electrode films, antistatic films, etc., and has a wide range of uses.
透明な酸化亜鉛薄膜や３Ｂ族元素がドープされた酸化亜鉛薄膜の製造方法としては種々の方法が知られている（非特許文献１）。有機亜鉛化合物を原料として用いる代表的な方法としては、化学気相成長（ＣＶＤ）法（非特許文献２）と、スプレー熱分解法（非特許文献３）、スピンコート法（特許文献１）、ディップコート法（非特許文献４）等の塗布法とがある。 Various methods are known as methods for producing a transparent zinc oxide thin film or a zinc oxide thin film doped with a group 3B element (Non-patent Document 1). As a typical method using an organic zinc compound as a raw material, a chemical vapor deposition (CVD) method (Non-Patent Document 2), a spray pyrolysis method (Non-Patent Document 3), a spin coating method (Patent Document 1), There are coating methods such as a dip coating method (Non-patent Document 4).
しかしながら、化学気相成長（ＣＶＤ）法では、大型の真空容器を用いる必要があり、かつ製膜速度が非常に遅いために製造コストが高くなる。また、真空容器の大きさにより形成することのできる３Ｂ族元素がドープされた酸化亜鉛薄膜の大きさが制限される為に大型のものを形成することができない、等の問題があった。 However, the chemical vapor deposition (CVD) method requires the use of a large vacuum container and the film forming speed is very slow, resulting in an increase in manufacturing cost. Moreover, since the size of the zinc oxide thin film doped with the group 3B element, which can be formed depending on the size of the vacuum vessel, is limited, there is a problem that a large size cannot be formed.
上記塗布法は、上記化学気相成長（ＣＶＤ）法に比べて装置が簡便で膜形成速度が速い為生産性が高く製造コストも低い。また、真空容器を用いる必要がなく真空容器による制約がない為、大きな３Ｂ族元素がドープされた酸化亜鉛薄膜の作成も可能であるという利点がある。 Compared with the chemical vapor deposition (CVD) method, the coating method is simpler and has a higher film formation speed, and therefore has higher productivity and lower manufacturing costs. Moreover, since there is no need to use a vacuum vessel and there are no restrictions due to the vacuum vessel, there is an advantage that a zinc oxide thin film doped with a large group 3B element can be produced.
上記スプレー熱分解法では、スプレー塗布と同時に溶媒乾燥し、次いで基板温度を３６０℃以上に加熱することで酸化亜鉛薄膜や３Ｂ族元素がドープされた酸化亜鉛薄膜塗膜を得ている。 In the spray pyrolysis method, solvent drying is performed simultaneously with spray application, and then the substrate temperature is heated to 360 ° C. or higher to obtain a zinc oxide thin film or a zinc oxide thin film coated with a group 3B element.
上記スピンコート法およびディップコート法は、スピンコートまたはディップコート後に溶媒を乾燥し、次いで基板温度を４００℃以上に加熱することで酸化亜鉛薄膜や３Ｂ族元素がドープされた酸化亜鉛薄膜塗膜を得ている。 In the spin coating method and the dip coating method, the solvent is dried after spin coating or dip coating, and then the substrate temperature is heated to 400 ° C. or higher to form a zinc oxide thin film or a zinc oxide thin film coated with a group 3B element. It has gained.
透明な酸化亜鉛薄膜や３Ｂ族元素がドープされた酸化亜鉛薄膜は、プラスチック基板に形成されるようになってきている。そのため、透明な酸化亜鉛薄膜や３Ｂ族元素がドープされた酸化亜鉛薄膜の形成時に適用される加熱は、プラスチック基板の耐熱温度以下で実施されることが必要である。しかるに、上記非特許文献３に記載のスプレー熱分解法、特許文献１に記載のスピンコート法、および非特許文献４に記載のディップコート法では、プラスチック基板の耐熱温度(通常は、材質にもよるが約300〜400℃の範囲)以下での加熱では、透明な酸化亜鉛薄膜や３Ｂ族元素がドープされた酸化亜鉛薄膜を得ることはできない。プラスチック基板の耐熱温度と加熱に要するコスト等を考慮すると、製膜時に要する加熱は、３００℃以下であることが望まれる。 Transparent zinc oxide thin films and zinc oxide thin films doped with Group 3B elements have been formed on plastic substrates. Therefore, the heating applied when forming a transparent zinc oxide thin film or a zinc oxide thin film doped with a group 3B element needs to be performed at a temperature lower than the heat resistance temperature of the plastic substrate. However, in the spray pyrolysis method described in Non-Patent Document 3, the spin-coating method described in Patent Document 1, and the dip-coating method described in Non-Patent Document 4, the heat resistance temperature of the plastic substrate (usually, the material is also used). However, a transparent zinc oxide thin film or a zinc oxide thin film doped with a group 3B element cannot be obtained by heating at a temperature of about 300 to 400 ° C. or less. Considering the heat-resistant temperature of the plastic substrate and the cost required for heating, it is desirable that the heating required for film formation is 300 ° C. or lower.
本発明者らは、非特許文献３に記載のスプレー熱分解法で用いられている３Ｂ族元素化合物と酢酸亜鉛の水溶液、特許文献１に記載のスピンコート法で用いられている３Ｂ族元素化合物、さらには有機亜鉛化合物と有機溶媒からなる溶液や非特許文献４に記載のディップコート法で用いられている有機亜鉛化合物と有機溶媒からなる溶液を用いて３００℃以下の温度での製膜を試みた。しかし、いずれの場合も、透明な３Ｂ族元素がドープされた酸化亜鉛薄膜が得られず、不透明な酸化亜鉛薄膜しか得られなかった。特許文献１に記載のジエチル亜鉛のヘキサン溶液を用いても３００℃以下での製膜を試みた。しかし、同様に透明な３Ｂ族元素がドープされた酸化亜鉛薄膜は得られなかった。 The present inventors have prepared an aqueous solution of a group 3B element compound and zinc acetate used in the spray pyrolysis method described in Non-Patent Document 3, and a group 3B element compound used in the spin coating method described in Patent Document 1. Furthermore, a film is formed at a temperature of 300 ° C. or lower using a solution composed of an organic zinc compound and an organic solvent or a solution composed of an organic zinc compound and an organic solvent used in the dip coating method described in Non-Patent Document 4. Tried. However, in any case, a transparent zinc oxide thin film doped with a group 3B element was not obtained, and only an opaque zinc oxide thin film was obtained. Even using the diethylzinc hexane solution described in Patent Document 1, film formation at 300 ° C. or lower was attempted. However, similarly, a transparent zinc oxide thin film doped with a group 3B element was not obtained.
また、ジエチル亜鉛は大気中で発火性があり、保管、使用時に非常な注意を払わねばならない化合物である。そのため、ジエチル亜鉛を希釈等することなしに、通常、水が存在する雰囲気中で行われることの多い、スプレー熱分解法、スピンコート法等で用いることは、実用上困難である。一方、ジエチル亜鉛は、有機溶媒に溶解した状態では、発火性などの危険性を低減できる。特許文献１に記載のように、アルコール系の有機溶媒に反応させながら溶解したジエチル亜鉛を用いた酸化亜鉛薄膜の製膜では危険性は低減できるが、透明な膜の形成には、４００℃以上の高温で加熱が必要であった。 Diethyl zinc is a compound that is ignitable in the atmosphere and must be very carefully stored and used. For this reason, it is practically difficult to use it in a spray pyrolysis method, spin coating method, etc., which is often performed in an atmosphere containing water without diluting diethyl zinc. On the other hand, diethyl zinc can reduce risks such as ignition when dissolved in an organic solvent. As described in Patent Document 1, the risk can be reduced in the formation of a zinc oxide thin film using diethyl zinc dissolved while reacting with an alcohol-based organic solvent. It was necessary to heat at a high temperature.
この点を改良するため、発明者らは特許文献２のように、ジエチル亜鉛を電子供与性溶媒に溶解し、成膜方法にスプレー法を用いることで酸化亜鉛の低温成膜が可能であることを見出し、特許を出願した。この酸化亜鉛薄膜形成用の溶液をスピンコート等の塗布法で成膜を行なうと、薄膜の形成は可能であるが、有機亜鉛化合物であるジエチル亜鉛が揮発性がある、粘度が低いなどの理由から膜厚を得るための塗布回数が多くなるなどの、改良の余地がある。 In order to improve this point, the inventors are able to perform low-temperature deposition of zinc oxide by dissolving diethyl zinc in an electron-donating solvent and using a spraying method as described in Patent Document 2. And applied for a patent. When this zinc oxide thin film forming solution is deposited by spin coating or other coating methods, it is possible to form a thin film, but the reason is that diethyl zinc, an organic zinc compound, is volatile and has a low viscosity. There is room for improvement, such as an increase in the number of coatings for obtaining a film thickness.
そこで本発明の目的は、有機亜鉛化合物を原料として調製したものであるが、発火性がなく取扱いが容易であり、かつ加熱が必要であっても３００℃以下の加熱で透明な酸化亜鉛薄膜や３Ｂ族元素がドープされた酸化亜鉛薄膜を形成することができる、酸化亜鉛薄膜製造用組成物を提供することである。さらに本発明の目的は、この組成物を用いた、プラスチック基板の耐熱温度と加熱に要するコスト等を考慮して、製膜時に加熱を必要としないか、あるいは加熱しても３００℃以下の加熱で、透明な酸化亜鉛薄膜や３Ｂ族元素がドープされた酸化亜鉛薄膜を得ることができる方法を提供することにある。 Therefore, the object of the present invention is to prepare an organic zinc compound as a raw material, but it is easy to handle because it is not ignitable, and even if heating is required, a transparent zinc oxide thin film can be obtained by heating at 300 ° C. or lower. To provide a composition for producing a zinc oxide thin film capable of forming a zinc oxide thin film doped with a group 3B element. Further, the object of the present invention is to take into consideration the heat resistance temperature of plastic substrates and the cost required for heating, etc., using this composition. Then, it is providing the method of obtaining the transparent zinc oxide thin film and the zinc oxide thin film doped with the 3B group element.
上記課題を解決するための本発明は、以下のとおりである。
［１］
一般式（１）で表される有機亜鉛化合物を電子供与性有機溶媒に溶解した溶液に、水を添加して、前記有機亜鉛化合物を少なくとも部分的に加水分解することにより得られる生成物（以下、部分加水分解物１と呼ぶことがある）を含み、前記水の添加量は、前記有機亜鉛化合物に対するモル比が０．０５以上〜０．４未満の範囲である、酸化亜鉛薄膜製造用組成物。
Ｒ1−Ｚｎ−Ｒ1 （１）
（式中、Ｒ1は炭素数１〜７の直鎖または分岐したアルキル基である）
［２］
下記一般式（１）で表される有機亜鉛化合物と、下記一般式（２）または下記一般式（３）で表される３Ｂ族元素化合物の少なくとも１種とを電子供与性有機溶媒に溶解した溶液に、水を添加して、少なくとも前記有機亜鉛化合物を少なくとも部分的に加水分解して得られる生成物（以下、部分加水分解物２と呼ぶことがある）を含み、前記３Ｂ族元素化合物は、前記有機亜鉛化合物に対するモル比が０．００５〜０．３の割合であり、かつ前記水の添加量は、前記有機亜鉛化合物および３Ｂ族元素化合物の合計量に対するモル比が０．０５以上〜０．４未満の範囲である、ドープ酸化亜鉛薄膜製造用組成物。
Ｒ1−Ｚｎ−Ｒ1 （１）
（式中、Ｒ1は炭素数１〜７の直鎖または分岐したアルキル基である）
ＭcＸd・ａＨ2Ｏ （２）
（式中、Ｍは３Ｂ族元素であり、Ｘは、ハロゲン原子、硝酸または硫酸であり、Ｘがハロゲン原子または硝酸の場合、ｃは１、ｄは３、Ｘが硫酸の場合、ｃは２、ｄは３、ａは０〜９の整数である。）
（式中、Ｍは３Ｂ族元素であり、Ｒ2、Ｒ3、Ｒ4は独立に、水素、炭素数１〜７の直鎖もしくは分岐したアルキル基、炭素数１〜７の直鎖もしくは分岐したアルコキシル基、カルボン酸基、またはアセチルアセトナート基であり、さらにＬは窒素、酸素またはリンを含有した配位性有機化合物であり、ｎは０〜９の整数である。）
［３］
前記生成物は、前記３Ｂ族元素化合物の加水分解物を含む［２］に記載の組成物。
［４］
一般式（１）で表される有機亜鉛化合物を電子供与性有機溶媒に溶解した溶液に、水を添加して、前記有機亜鉛化合物を少なくとも部分的に加水分解した後、一般式（２）または一般式（３）で表される３Ｂ族元素化合物の少なくとも１種を、前記有機亜鉛化合物に対するモル比が０．００５〜０．３の割合になるよう添加することにより得られる生成物（以下、部分加水分解物３と呼ぶことがある）を含み、かつ前記水の添加量は、前記有機亜鉛化合物に対するモル比が０．０５以上〜０．４未満の範囲である、ドープ酸化亜鉛薄膜製造用組成物。
Ｒ1−Ｚｎ−Ｒ1 （１）
（式中、Ｒ1は炭素数１〜７の直鎖または分岐したアルキル基である）
ＭcＸd・ａＨ2Ｏ （２）
（式中、Ｍは３Ｂ族元素であり、Ｘは、ハロゲン原子、硝酸または硫酸であり、Ｘがハロゲン原子または硝酸の場合、ｃは１、ｄは３、Ｘが硫酸の場合、ｃは２、ｄは３、ａは０〜９の整数である。）
（式中、Ｍは３Ｂ族元素であり、Ｒ2、Ｒ3、Ｒ4は独立に、水素、炭素数１〜７の直鎖もしくは分岐したアルキル基、炭素数１〜７の直鎖もしくは分岐したアルコキシル基、カルボン酸基、またはアセチルアセトナート基であり、さらにＬは窒素、酸素またはリンを含有した配位性有機化合物であり、ｎは０〜９の整数である。）
［５］
前記生成物は、前記３Ｂ族元素化合物の加水分解物を実質的に含まない［４］に記載の組成物。
［６］
前記生成物の濃度が１〜３０質量％の範囲である［１］〜［５］のいずれかに記載の組成物。
［７］
前記有機亜鉛化合物は、Ｒ1が炭素数１、２、３、４、５、または６のアルキル基である化合物である［１］〜［６］のいずれかに記載の組成物。
［８］
前記有機亜鉛化合物がジエチル亜鉛である［１］〜［７］のいずれかに記載の組成物。
The present invention for solving the above problems is as follows.
[1]
A product obtained by adding water to a solution in which the organozinc compound represented by the general formula (1) is dissolved in an electron-donating organic solvent and hydrolyzing the organozinc compound at least partially (hereinafter referred to as the product) And the amount of water added is a composition for producing a zinc oxide thin film in which the molar ratio relative to the organozinc compound is in the range of 0.05 to less than 0.4. object.
R 1 —Zn—R 1 (1)
(In the formula, R 1 is a linear or branched alkyl group having 1 to 7 carbon atoms)
[2]
An organic zinc compound represented by the following general formula (1) and at least one of group 3B element compounds represented by the following general formula (2) or the following general formula (3) were dissolved in an electron-donating organic solvent. A solution obtained by adding water to the solution and at least partially hydrolyzing the organozinc compound (hereinafter sometimes referred to as partial hydrolyzate 2), The molar ratio with respect to the organozinc compound is 0.005 to 0.3, and the amount of water added is 0.05 to 0.3 with respect to the total amount of the organozinc compound and the group 3B element compound. A composition for producing a doped zinc oxide thin film having a range of less than 0.4.
R 1 —Zn—R 1 (1)
(In the formula, R 1 is a linear or branched alkyl group having 1 to 7 carbon atoms)
M c X d · aH 2 O (2)
(Wherein M is a group 3B element, X is a halogen atom, nitric acid or sulfuric acid, c is 1, when d is a halogen atom or nitric acid, d is 3, and when X is sulfuric acid, c is 2 D is 3, and a is an integer of 0 to 9.)
(In the formula, M is a group 3B element, R 2 , R 3 , and R 4 are independently hydrogen, a linear or branched alkyl group having 1 to 7 carbon atoms, or a linear or branched group having 1 to 7 carbon atoms. An alkoxyl group, a carboxylic acid group, or an acetylacetonate group, L is a coordinating organic compound containing nitrogen, oxygen or phosphorus, and n is an integer of 0 to 9.)
[3]
The composition according to [2], wherein the product includes a hydrolyzate of the group 3B element compound.
[4]
Water is added to a solution in which the organozinc compound represented by the general formula (1) is dissolved in an electron-donating organic solvent to hydrolyze the organozinc compound at least partially, and then the general formula (2) or A product obtained by adding at least one group 3B element compound represented by the general formula (3) such that the molar ratio to the organozinc compound is 0.005 to 0.3 (hereinafter, referred to as “a”). And may be referred to as a partial hydrolyzate 3), and the amount of water added is in the range of 0.05 to less than 0.4 in the molar ratio to the organic zinc compound. Composition.
R 1 —Zn—R 1 (1)
(In the formula, R 1 is a linear or branched alkyl group having 1 to 7 carbon atoms)
M c X d · aH 2 O (2)
(Wherein M is a group 3B element, X is a halogen atom, nitric acid or sulfuric acid, c is 1, when d is a halogen atom or nitric acid, d is 3, and when X is sulfuric acid, c is 2 D is 3, and a is an integer of 0 to 9.)
(In the formula, M is a group 3B element, R 2 , R 3 , and R 4 are independently hydrogen, a linear or branched alkyl group having 1 to 7 carbon atoms, or a linear or branched group having 1 to 7 carbon atoms. An alkoxyl group, a carboxylic acid group, or an acetylacetonate group, L is a coordinating organic compound containing nitrogen, oxygen or phosphorus, and n is an integer of 0 to 9.)
[5]
The composition according to [4], wherein the product does not substantially contain a hydrolyzate of the group 3B element compound.
[6]
The composition according to any one of [1] to [5], wherein the concentration of the product is in the range of 1 to 30% by mass.
[7]
The composition according to any one of [1] to [6], wherein the organozinc compound is a compound in which R 1 is an alkyl group having 1, 2, 3, 4, 5, or 6 carbon atoms.
[8]
The composition according to any one of [1] to [7], wherein the organozinc compound is diethyl zinc.
本発明の酸化亜鉛薄膜製造用組成物および３Ｂ族元素をドープした酸化亜鉛薄膜製造用組成物は、発火性がなく取扱いが容易であり、かつ本発明の酸化亜鉛薄膜製造用組成物および３Ｂ族元素をドープした酸化亜鉛薄膜製造用組成物を用いれば、３００℃以下の温度で製膜しても透明な酸化亜鉛薄膜および３Ｂ族元素がドープされた酸化亜鉛薄膜を製造することができる。 The composition for producing a zinc oxide thin film of the present invention and the composition for producing a zinc oxide thin film doped with a group 3B element are not ignitable and easy to handle, and the composition for producing a zinc oxide thin film of the present invention and the group 3B If a composition for producing a zinc oxide thin film doped with an element is used, a transparent zinc oxide thin film and a zinc oxide thin film doped with a group 3B element can be produced even if the composition is formed at a temperature of 300 ° C. or lower.
［酸化亜鉛薄膜製造用組成物］
本発明の酸化亜鉛薄膜製造用組成物は、下記一般式（１）で表される有機亜鉛化合物を電子供与性有機溶媒に溶解した溶液に、水を添加して、前記有機亜鉛化合物を少なくとも部分的に加水分解して得られる生成物（部分加水分解物１）を含み、前記水の添加量は、前記有機亜鉛化合物に対するモル比が０．０５以上〜０．４未満の範囲である。
Ｒ1−Ｚｎ−Ｒ1 （１）
（式中、Ｒ1は炭素数１〜７の直鎖または分岐したアルキル基である）
[Composition for zinc oxide thin film production]
In the composition for producing a zinc oxide thin film of the present invention, water is added to a solution in which an organic zinc compound represented by the following general formula (1) is dissolved in an electron-donating organic solvent, so that the organic zinc compound is at least partially The product (partial hydrolyzate 1) obtained by hydrolytic hydrolysis is included, and the amount of water added is such that the molar ratio with respect to the organozinc compound is 0.05 or more and less than 0.4.
R 1 —Zn—R 1 (1)
(In the formula, R 1 is a linear or branched alkyl group having 1 to 7 carbon atoms)
部分加水分解物１において、０．４以上に水の添加量を増やして加水分解度を進めても加水分解生成物を得ることが出来るが、未反応の反応性の高いジエチル亜鉛の残存量が少なくなり、２００℃以下などでの低温での反応性が得られなくなる可能性がある。 In the partial hydrolyzate 1, a hydrolysis product can be obtained even if the amount of water added is increased to 0.4 or more to increase the degree of hydrolysis, but the residual amount of unreacted highly reactive diethylzinc There is a possibility that reactivity at a low temperature such as 200 ° C. or less cannot be obtained.
［３Ｂ族元素をドープした酸化亜鉛薄膜製造用組成物］
本発明の３Ｂ族元素をドープした酸化亜鉛薄膜製造用組成物は、（ｉ）下記一般式（１）で表される有機亜鉛化合物と下記一般式（２）または（３）で表される３Ｂ族元素化合物の少なくとも１種とを電子供与性有機溶媒に溶解した溶液に、水を添加して、少なくとも前記有機亜鉛化合物を少なくとも部分的に加水分解して得られる生成物(部分加水分解物２)を含むか、あるいは（ｉｉ）前記一般式（１）で表される有機亜鉛化合物を電子供与性有機溶媒に溶解した溶液に、水を添加して、前記有機亜鉛化合物を少なくとも部分的に加水分解した後、前記一般式（２）または（３）で表される３Ｂ族元素化合物の少なくとも１種を添加して得られる生成物(以下、部分加水分解物３と呼ぶことがある)を含む。
Ｒ1−Ｚｎ−Ｒ1 （１）
（式中、Ｒ1は炭素数１〜７の直鎖または分岐したアルキル基である）
ＭcＸd・ａＨ2Ｏ （２）
（式中、Ｍは３Ｂ族元素であり、Ｘは、ハロゲン原子、硝酸または、硫酸、リン酸であり、Ｘがハロゲン原子または、硝酸の場合、ｃは１、ｄは３、Ｘが硫酸の場合、ｃは２、ｄは３、ａは０〜９の整数である。）
（式中、Ｍは３Ｂ族元素であり、Ｒ2、Ｒ3、Ｒ4は独立に、水素、炭素数１〜７の直鎖もしくは分岐したアルキル基、炭素数１〜７の直鎖もしくは分岐したアルコキシル基、カルボン酸基、もしくはアセチルアセトナート基であり、さらに、Ｌは窒素、酸素、リンいずれかを含有した配位性有機化合物であり、ｂは０〜９の整数である。）
[Composition for producing zinc oxide thin film doped with group 3B element]
The composition for producing a zinc oxide thin film doped with a group 3B element of the present invention comprises (i) an organozinc compound represented by the following general formula (1) and 3B represented by the following general formula (2) or (3). A product (partial hydrolyzate 2) obtained by adding water to a solution in which at least one group element compound is dissolved in an electron-donating organic solvent and at least partially hydrolyzing the organozinc compound. Or (ii) water is added to a solution in which the organozinc compound represented by the general formula (1) is dissolved in an electron-donating organic solvent, so that the organozinc compound is at least partially hydrolyzed. After decomposition, a product obtained by adding at least one group 3B element compound represented by the general formula (2) or (3) (hereinafter sometimes referred to as partial hydrolyzate 3) is included. .
R 1 —Zn—R 1 (1)
(In the formula, R 1 is a linear or branched alkyl group having 1 to 7 carbon atoms)
M c X d · aH 2 O (2)
(In the formula, M is a group 3B element, X is a halogen atom, nitric acid, sulfuric acid, or phosphoric acid. When X is a halogen atom or nitric acid, c is 1, d is 3, and X is sulfuric acid. In this case, c is 2, d is 3, and a is an integer of 0 to 9.)
(In the formula, M is a group 3B element, R 2 , R 3 , and R 4 are independently hydrogen, a linear or branched alkyl group having 1 to 7 carbon atoms, or a linear or branched group having 1 to 7 carbon atoms. And L is a coordinating organic compound containing any one of nitrogen, oxygen and phosphorus, and b is an integer of 0 to 9.)
部分加水分解物２においては、有機亜鉛化合物と３Ｂ族元素化合物の混合溶液に水を添加するので、前記生成物は、通常、前記３Ｂ族元素化合物の加水分解物を含む。３Ｂ族元素化合物の加水分解物は、水の添加量等によるが、部分加水分解物であることができる。また、部分加水分解物３においては、有機亜鉛化合物に水を添加した後に、３Ｂ族元素化合物を添加することから、水の添加量等によるが、添加した水が有機亜鉛化合物の加水分解に消費された後に３Ｂ族元素化合物へ添加される場合には、前記生成物は、通常、前記３Ｂ族元素化合物の加水分解物は含まない。３Ｂ族元素化合物は、加水分解されず、原料のままで含有されるか、あるいは、有機亜鉛化合物の部分加水分解物が有する有機基と３Ｂ族元素化合物の有機基(配位子)が交換(配位子交換)したものになる可能性もある。 In the partial hydrolyzate 2, water is added to the mixed solution of the organozinc compound and the group 3B element compound, so that the product usually contains a hydrolyzate of the group 3B element compound. The hydrolyzate of the group 3B element compound may be a partial hydrolyzate depending on the amount of water added. In the partial hydrolyzate 3, since the group 3B element compound is added after adding water to the organic zinc compound, the added water is consumed for hydrolysis of the organic zinc compound depending on the amount of water added. When the product is added to the group 3B element compound, the product usually does not contain the hydrolyzate of the group 3B element compound. The group 3B element compound is not hydrolyzed and is contained as a raw material, or the organic group of the partial hydrolyzate of the organozinc compound and the organic group (ligand) of the group 3B element compound are exchanged ( Ligand exchange) may also occur.
前記水の添加量は、部分加水分解物２においては、前記有機亜鉛化合物と３Ｂ族元素化合物の合計量に対するモル比を０．０５以上〜０．４未満の範囲とする。また、酸化亜鉛薄膜製造用組成物や部分加水分解物３においては、前記水の添加量は、前記有機亜鉛化合物に対するモル比を０．０５以上〜０．４未満の範囲とする。０．４以上に水の添加量を増やして加水分解度を進めても加水分解生成物を得ることが出来るが、未反応の反応性の高いジエチル亜鉛の残存量が少なくなり、２００℃以下などでの低温での反応性が得られなくなる可能性がある。 In the partial hydrolyzate 2, the amount of water added is such that the molar ratio to the total amount of the organozinc compound and the group 3B element compound is in the range of 0.05 to less than 0.4. Moreover, in the composition for zinc oxide thin film manufacture and the partial hydrolyzate 3, the addition amount of the water makes the molar ratio with respect to the said organic zinc compound the range of 0.05-0.4. Even if the amount of water added is increased to 0.4 or more to increase the hydrolysis degree, a hydrolysis product can be obtained, but the residual amount of unreacted highly reactive diethylzinc is reduced, such as 200 ° C. or less. There is a possibility that reactivity at a low temperature may not be obtained.
以下、部分加水分解物１〜３について合わせて説明する。
電子供与性有機溶媒は、部分加水分解物１においては、一般式（１）で表される有機亜鉛化合物および水に対して溶解性を有するものであればよく、部分加水分解物２および３においては、一般式（１）で表される有機亜鉛化合物、一般式（２）または（３）で表される３Ｂ族元素化合物および水に対して溶解性を有するものであればよい。そのような電子供与性有機溶媒の例としては、１，２−ジエトキシエタンやジエチルエーテル、ジｎ−プロピルエーテル、ジイソプロピルエーテル、ジブチルエーテル、テトラヒドロフラン、ジオキサン、グライム、ジグライム、トリグライム等のエーテル系溶媒、トリメチルアミン、トリエチルアミン、トリフェニルアミン等のアミン系溶媒等を挙げることができる。電子供与性を有する溶媒としては、１，２−ジエトキシエタン、テトラヒドロフラン、ジオキサンが好ましい。
Hereinafter, the partial hydrolysates 1 to 3 will be described together.
In the partial hydrolyzate 1, the electron-donating organic solvent only needs to have solubility in the organic zinc compound represented by the general formula (1) and water. The organic zinc compound represented by the general formula (1), the group 3B element compound represented by the general formula (2) or (3), and water may be used. Examples of such electron-donating organic solvents include ether solvents such as 1,2-diethoxyethane, diethyl ether, di-n-propyl ether, diisopropyl ether, dibutyl ether, tetrahydrofuran, dioxane, glyme, diglyme, and triglyme. And amine solvents such as trimethylamine, triethylamine, and triphenylamine. As the solvent having an electron donating property, 1,2-diethoxyethane, tetrahydrofuran, and dioxane are preferable.
前記一般式（１）で表される有機亜鉛化合物におけるＲ1として表されるアルキル基の具体例としては、メチル基、エチル基、プロピル基、イソプロピル基、ブチル基、イソブチル基、ｓｅｃ−ブチル基、ｔｅｒｔ−ブチル基、ペンチル基、イソペンチル基、ネオペンチル基、ｔｅｒｔ−ペンチル基、ヘキシル基、イソヘキシル基、ｓｅｃ−ヘキシル基、ｔｅｒｔ−ヘキシル基、２−ヘキシル基、およびヘプチル基を挙げることができる。一般式（１）で表される化合物は、Ｒ1が炭素数１、２、３、４、５、または６の化合物であることが好ましい。一般式（１）で表される化合物は、特にＲ1が炭素数２である、ジエチル亜鉛であることが好ましい。 Specific examples of the alkyl group represented by R 1 in the organozinc compound represented by the general formula (1) include a methyl group, an ethyl group, a propyl group, an isopropyl group, a butyl group, an isobutyl group, and a sec-butyl group. Tert-butyl group, pentyl group, isopentyl group, neopentyl group, tert-pentyl group, hexyl group, isohexyl group, sec-hexyl group, tert-hexyl group, 2-hexyl group, and heptyl group. In the compound represented by the general formula (1), R 1 is preferably a compound having 1, 2, 3, 4, 5, or 6 carbon atoms. The compound represented by the general formula (1) is preferably diethyl zinc, in which R 1 has 2 carbon atoms.
前記一般式（２）で表される３Ｂ族元素化合物におけるMとして表される金属の具体例としては、Ｂ、Ａｌ、Ｇａ、Ｉｎを挙げことができる。また、Ｘとして表される塩の具体例としては、フッ素、塩素、臭素、ヨウ素、硝酸、硫酸、リン酸を挙げることができる。一般式（２）で表される３Ｂ族元素化合物は、特に、塩化ホウ素、塩化アルミニウム６水和物、硝酸アルミニウム９水和物、塩化ガリウム、硝酸ガリウム水和物、塩化インジウム４水和物、硝酸インジウム５水和物を挙げることができる。 Specific examples of the metal represented by M in the group 3B element compound represented by the general formula (2) include B, Al, Ga, and In. Specific examples of the salt represented by X include fluorine, chlorine, bromine, iodine, nitric acid, sulfuric acid, and phosphoric acid. The group 3B element compound represented by the general formula (2) includes, in particular, boron chloride, aluminum chloride hexahydrate, aluminum nitrate nonahydrate, gallium chloride, gallium nitrate hydrate, indium chloride tetrahydrate, Mention may be made of indium nitrate pentahydrate.
前記一般式（３）で表される３Ｂ族元素化合物におけるMとして表される金属の具体例としては、Ｂ、Ａｌ、Ｇａ、Ｉｎを挙げことができる。また、Ｒ2、Ｒ3、及びＲ4は水素であることが好ましい。あるいは、Ｒ2、Ｒ3、及びＲ4はアルキル基であることも好ましく、アルキル基の具体例としては、メチル基、エチル基、プロピル基、イソプロピル基、ブチル基、イソブチル基、ｓｅｃ−ブチル基、ｔｅｒｔ−ブチル基、ペンチル基、イソペンチル基、ネオペンチル基、ｔｅｒｔ−ペンチル基、ヘキシル基、イソヘキシル基、ｓｅｃ−ヘキシル基、ｔｅｒｔ−ヘキシル基、２−ヘキシル基、およびヘプチル基を挙げることができる。Ｒ2、Ｒ3、及びＲ4は、少なくとも１つが水素であり、残りがアルキル基であることも好ましい。Ｌとして表される配位子は、トリメチルアミン、トリエチルアミン、トリフェニルアミン、ピリジン、モノフォリン、Ｎ，Ｎ−ジメチルアニリン、Ｎ，Ｎ−ジエチルアニリン、トリフェニルフォスフィン、ジメチル硫黄、ジエチルエーテル、テトラヒドロフランを挙げることができる。一般式（３）で表される３Ｂ族元素化合物は、特に、ジボラン、ボラン−テトラヒドロフラン錯体、ボラン−トリメチルアミン錯体、ボラン−トリエチルアミン錯体、トリエチルボラン、トリブチルボラン、アラン−トリメチルアミン錯体、アラン−トリエチルアミン錯体、トリメチルアルミニウム、ジメチルアミルニウムヒドリド、トリイソブチルアルミニウム、ジイソブチルアルミニウムヒドリド、トリメチルガリウム、トリエチルガリウム、トリメチルインジウム、トリメチルインジウム、トリエチルインジウムを挙げることができる。価格が安く入手が容易であるという点から、トリエチルアルミニウム、トリイソブチルアルミニウム、トリメチルガリウム、トリメチルインジウムが特に好ましい。 Specific examples of the metal represented by M in the group 3B element compound represented by the general formula (3) include B, Al, Ga, and In. R 2 , R 3 and R 4 are preferably hydrogen. Alternatively, R 2 , R 3 , and R 4 are preferably alkyl groups. Specific examples of the alkyl group include a methyl group, an ethyl group, a propyl group, an isopropyl group, a butyl group, an isobutyl group, and a sec-butyl group. Tert-butyl group, pentyl group, isopentyl group, neopentyl group, tert-pentyl group, hexyl group, isohexyl group, sec-hexyl group, tert-hexyl group, 2-hexyl group, and heptyl group. It is also preferred that at least one of R 2 , R 3 and R 4 is hydrogen and the rest is an alkyl group. Examples of the ligand represented by L include trimethylamine, triethylamine, triphenylamine, pyridine, monophorin, N, N-dimethylaniline, N, N-diethylaniline, triphenylphosphine, dimethylsulfur, diethyl ether, and tetrahydrofuran. be able to. The group 3B element compound represented by the general formula (3) includes, in particular, diborane, borane-tetrahydrofuran complex, borane-trimethylamine complex, borane-triethylamine complex, triethylborane, tributylborane, alane-trimethylamine complex, alane-triethylamine complex, Mention may be made of trimethylaluminum, dimethylamylnium hydride, triisobutylaluminum, diisobutylaluminum hydride, trimethylgallium, triethylgallium, trimethylindium, trimethylindium and triethylindium. Triethylaluminum, triisobutylaluminum, trimethylgallium, and trimethylindium are particularly preferable because they are inexpensive and easily available.
本発明の組成物（部分加水分解物２および３）においては、前記一般式（１）で表される有機亜鉛化合物と有機亜鉛化合物に対する前記一般式（２）または（３）で表される３Ｂ族元素化合物のモル比が０．００５〜０．３の割合で添加する。３Ｂ族元素化合物の添加量が多くなり過ぎると、不純物として膜特性を劣化させる傾向がある為、０．００５〜０．１の割合とすることが好ましい。但し、部分加水分解物２においては、上記モル比で有機亜鉛化合物と３Ｂ族元素化合物を含有する溶液に水を添加して部分加水分解物を得る。また、部分加水分解物３においては、有機亜鉛化合物を含有する溶液に水を添加して部分加水分解物を得、その上で、上記モル比で３Ｂ族元素化合物を添加する。 In the composition of the present invention (partial hydrolysates 2 and 3), the organic zinc compound represented by the general formula (1) and 3B represented by the general formula (2) or (3) with respect to the organic zinc compound. The group element compound is added at a molar ratio of 0.005 to 0.3. If the added amount of the group 3B element compound is too large, the film characteristics tend to be deteriorated as impurities, and therefore the ratio is preferably 0.005 to 0.1. However, in the partial hydrolyzate 2, water is added to the solution containing the organozinc compound and the 3B group element compound at the above molar ratio to obtain a partial hydrolyzate. Moreover, in the partial hydrolyzate 3, water is added to the solution containing an organic zinc compound, a partial hydrolyzate is obtained, and the 3B group element compound is added by the said molar ratio on it.
前記一般式（１）で表される化合物を前記電子供与性有機溶媒に溶解した溶液における、前記一般式（１）で表される化合物の濃度は、溶媒への溶解性等を考慮して適宜決定されるが、例えば、０．１〜５０質量％の範囲とすることが適当であり、１〜３０質量％の範囲が好ましい。前記一般式（１）で表される化合物と前記一般式（２）または（３）で表される３Ｂ族元素化合物を前記電子供与性有機溶媒に溶解した溶液における、前記一般式（１）で表される化合物と前記一般式（２）または（３）で表される３Ｂ族元素化合物の合計量の濃度は、溶媒への溶解性等を考慮して適宜決定されるが、例えば、０．１〜５０質量％の範囲とすることが適当である。 The concentration of the compound represented by the general formula (1) in the solution obtained by dissolving the compound represented by the general formula (1) in the electron donating organic solvent is appropriately determined in consideration of the solubility in the solvent. Although it is determined, for example, a range of 0.1 to 50% by mass is appropriate, and a range of 1 to 30% by mass is preferable. In the general formula (1) in a solution obtained by dissolving the compound represented by the general formula (1) and the group 3B element compound represented by the general formula (2) or (3) in the electron donating organic solvent. The total concentration of the compound represented by the general formula (2) or (3) and the concentration of the compound represented by the general formula (2) or (3) is appropriately determined in consideration of solubility in a solvent. The range of 1 to 50% by mass is appropriate.
前記一般式（１）の有機亜鉛化合物を少なくとも部分加水分解した後、前記一般式（２）または（３）の３Ｂ元素化合物を添加する場合（部分加水分解物３の場合）、前記一般式（１）で表される化合物を前記電子供与性有機溶媒に溶解した溶液における、前記一般式（１）で表される化合物の濃度は、溶媒への溶解性等を考慮して適宜決定されるが、例えば、０．１〜５０質量％の範囲とすることが適当である。 When at least partially hydrolyzing the organozinc compound of the general formula (1), the 3B element compound of the general formula (2) or (3) is added (in the case of the partial hydrolyzate 3), The concentration of the compound represented by the general formula (1) in the solution obtained by dissolving the compound represented by 1) in the electron donating organic solvent is appropriately determined in consideration of the solubility in the solvent. For example, it is suitable to set it as the range of 0.1-50 mass%.
水の添加は、水を他の溶媒と混合することなく行うことも、水を他の溶媒と混合した後に行うこともできる。水の添加は、反応の規模にもよるが、例えば、６０秒〜１０時間の間の時間をかけて行うことができる。生成物の収率が良好であるという観点から、原料である前記一般式（１）の有機亜鉛化合物に水を滴下することにより添加することが好ましい。水の添加は、一般式（１）で表される化合物と電子供与性有機溶媒との溶液を攪拌せずに（静置した状態で）または攪拌しながら実施することができる。添加時の温度は、−９０〜１５０℃の間の任意の温度を選択できる。−１５〜３０℃であることが水と有機亜鉛化合物の反応性という観点から好ましい。 The addition of water can be performed without mixing water with another solvent or after mixing water with another solvent. The addition of water can be performed, for example, over a time period of 60 seconds to 10 hours, depending on the scale of the reaction. From the viewpoint that the yield of the product is good, it is preferable to add it by dropping water into the organozinc compound of the general formula (1) as a raw material. The addition of water can be carried out without stirring (while standing) or stirring the solution of the compound represented by the general formula (1) and the electron donating organic solvent. The temperature at the time of addition can select arbitrary temperature between -90-150 degreeC. It is preferable that it is -15-30 degreeC from a viewpoint of the reactivity of water and an organic zinc compound.
水の添加後に、水と一般式（１）で表される化合物と一般式（２）または（３）で表される化合物、もしくは、水と一般式（１）で表される化合物との反応を進行させるために、例えば、１分から４８時間、攪拌せずに（静置した状態で）置くか、または攪拌する。反応温度については、−９０〜１５０℃の間の任意の温度で反応させることができる。５〜８０℃であることが部分加水分解物を高収率で得るという観点から好ましい。反応圧力は制限されない。通常は、常圧（大気圧）で実施できる。水と一般式（１）で表される化合物との反応の進行は、必要により、反応混合物をサンプリングし、サンプルをNMRあるいはIR等で分析、もしくは、発生するガスをサンプリングすることによりモニタリングすることができる。 Reaction of water and the compound represented by general formula (1) and the compound represented by general formula (2) or (3), or water and the compound represented by general formula (1) after addition of water For example, leave for 1 minute to 48 hours without stirring (still standing) or stir. About reaction temperature, it can be made to react at arbitrary temperature between -90-150 degreeC. It is preferable that it is 5-80 degreeC from a viewpoint of obtaining a partial hydrolyzate with a high yield. The reaction pressure is not limited. Usually, it can be carried out at normal pressure (atmospheric pressure). The progress of the reaction between water and the compound represented by the general formula (1) is monitored by sampling the reaction mixture, analyzing the sample by NMR or IR, or sampling the generated gas, if necessary. Can do.
前記の有機溶媒、原料である前記一般式（１）の有機亜鉛化合物、そして水はあらゆる慣用の方法に従って反応容器に導入することができ、溶媒との混合物としても導入することができる。これらの反応工程は回分操作式、半回分操作式、連続操作式のいずれでもよく、特に制限はないが、回分操作式が望ましい。 The organic solvent, the organic zinc compound of the general formula (1) as a raw material, and water can be introduced into the reaction vessel according to any conventional method, and can also be introduced as a mixture with the solvent. These reaction steps may be a batch operation method, a semi-batch operation method, or a continuous operation method, and are not particularly limited, but a batch operation method is desirable.
上記反応により、前記一般式（１）の有機亜鉛化合物と前記一般式（２）または（３）の３Ｂ族元素化合物、もしくは、前記一般式（１）の有機亜鉛化合物は、水により少なくとも部分的に加水分解されて、部分加水分解物を含む生成物が得られる。一般式（１）の有機亜鉛化合物がジエチル亜鉛である場合、水との反応により得られる生成物についての解析は古くから行われているが、報告により結果が異なり、生成物の組成が明確に特定されている訳ではない。また、水の添加モル比や反応時間等によっても、生成物の組成は変化し得る。本発明においては、生成物の主成分は、部分加水分解物２については、下記一般式（４）および(５)で表される構造単位と下記一般式（６）で表される構造単位を組み合わせた化合物であるか、あるいはｍが異なる複数種類の化合物の混合物である。
（R1−Ｚｎ）− （４）
−［Ｏ−Ｚｎ］m− （５）
（式中、R1は一般式（１）におけるＲ1と同じであり、ｍは２〜２０の整数である。）
（式中、Ｍは一般式（２）または（３）におけるMと同じであり、Qは一般式（２）または（３）におけるＸ、Ｒ2、Ｒ3、Ｒ4のいずれかと同じであり、ｍは２〜２０の整数である。）
By the above reaction, the organozinc compound of the general formula (1) and the group 3B element compound of the general formula (2) or (3), or the organozinc compound of the general formula (1) are at least partially in water. To obtain a product containing a partial hydrolyzate. When the organozinc compound of the general formula (1) is diethyl zinc, the analysis of the product obtained by reaction with water has been conducted for a long time, but the results differ depending on the report, and the composition of the product is clearly It is not specified. Further, the composition of the product can be changed depending on the molar ratio of water, the reaction time, and the like. In the present invention, the main component of the product includes, for the partial hydrolyzate 2, a structural unit represented by the following general formulas (4) and (5) and a structural unit represented by the following general formula (6). It is a combined compound or a mixture of a plurality of compounds with different m.
(R 1 -Zn)-(4)
-[O-Zn] m- (5)
(In the formula, R 1 is the same as R 1 in the general formula (1), m is an integer from 2 to 20.)
(In the formula, M is the same as M in the general formula (2) or (3), and Q is the same as any one of X, R 2 , R 3 and R 4 in the general formula (2) or (3). , M is an integer from 2 to 20.)
酸化亜鉛薄膜製造用組成物における部分加水分解物１や部分加水分解物３については、下記一般式（８）で表される化合物であるか、あるいは、ｍが異なる複数種類化合物の混合物であると推定される。
R1−Ｚｎ−［O−Ｚｎ］p−R1 （８）
（式中、R1は一般式（１）におけるＲ1と同じであり、ｐは２〜２０の整数である。）
About the partial hydrolyzate 1 and the partial hydrolyzate 3 in the composition for zinc oxide thin film manufacture, it is a compound represented by the following general formula (8), or a mixture of plural kinds of compounds having different m Presumed.
R 1 —Zn— [O—Zn] p —R 1 (8)
(In the formula, R 1 is the same as R 1 in the general formula (1), p is an integer from 2 to 20.)
３Ｂ族元素をドープした酸化亜鉛薄膜製造用組成物においては、前記有機亜鉛化合物の加水分解の際に、前記３Ｂ族元素化合物を共存させていない場合、反応終了後、前記一般式（２）または（３）の３Ｂ族化合物を添加することにより組成物を製造する。前記３Ｂ族元素化合物の添加量は、前記有機亜鉛化合物の仕込み量に対して０．００５〜０．３である。３Ｂ族元素化合物の添加効果を確実にえるいという観点、および添加量が多くなると不純物として膜特性を劣化させる傾向がある為、０．００５〜０．１が特に好ましい。 In the composition for producing a zinc oxide thin film doped with a group 3B element, when the group 3B element compound is not present at the time of hydrolysis of the organozinc compound, the general formula (2) or A composition is produced by adding the group 3B compound of (3). The addition amount of the 3B group element compound is 0.005 to 0.3 with respect to the charged amount of the organic zinc compound. From the viewpoint of ensuring the effect of addition of the group 3B element compound, and when the addition amount increases, the film characteristics tend to be deteriorated as impurities, so 0.005 to 0.1 is particularly preferable.
加水分解反応終了後、例えば、ろ過、濃縮、抽出、カラムクロマトグラフィー等の一般的な方法によって、上記生成物の一部または全部を回収及び精製することができる。また、加水分解反応終了後に３Ｂ族元素化合物を添加する場合には、ろ過によって、上記生成物の一部または全部を回収及び精製することができる。反応生成物中に、原料である一般式（１）の有機亜鉛化合物が残存する場合には、上記方法で回収することもでき、回収することもできる。 After completion of the hydrolysis reaction, a part or all of the product can be recovered and purified by a general method such as filtration, concentration, extraction, column chromatography and the like. Moreover, when adding a 3B group element compound after completion | finish of a hydrolysis reaction, a part or all of the said product can be collect | recovered and refine | purified by filtration. When the organozinc compound of general formula (1), which is a raw material, remains in the reaction product, it can be recovered by the above method or can be recovered.
上記方法で電子供与性有機溶媒から分離して回収した組成物は、反応に使用した電子供与性有機溶媒と異なる薄膜形成用有機溶媒に溶解して塗布用の溶液とすることもできる。また、電子供与性有機溶媒を分離することなく反応生成混合物をそのまま、あるいは適宜濃度を調整して塗布用の溶液とすることもできる。 The composition separated and recovered from the electron donating organic solvent by the above method can be dissolved in a thin film forming organic solvent different from the electron donating organic solvent used in the reaction to form a coating solution. In addition, the reaction product mixture can be used as it is or without any separation of the electron-donating organic solvent, or the concentration can be adjusted appropriately to obtain a coating solution.
前記薄膜形成用有機溶媒の例としては、ペンタン、ヘキサン、ヘプタン、オクタン、石油エーテル等の脂肪族炭化水素系溶媒、ベンゼン、トルエン、エチルベンゼン、キシレン等の芳香族炭化水素系溶媒、ジエチルエーテル、ジイソプロピルエーテル、グライム、ジグライム、トリグライム、ジオキサン、テトラヒドロフラン等のエーテル系溶媒、トリメチルアミン、トリエチルアミン、トリフェニルアミン等のアミン系溶媒等が挙げられる。また、これらは単独で使用するのみならず、２種類以上を混合して用いることも可能である。前記反応生成物に含まれる有機亜鉛化合物の部分加水分解物を含む反応生成物の溶解性、および、有機溶媒自身の揮発性等を考慮すると、薄膜形成用有機溶媒としては、１，２−ジエトキシエタン、１，４−ジオキサン、メチルモノグライム、エチルモノグライム、メチルジグライムが好ましい。 Examples of the organic solvent for forming the thin film include aliphatic hydrocarbon solvents such as pentane, hexane, heptane, octane and petroleum ether, aromatic hydrocarbon solvents such as benzene, toluene, ethylbenzene and xylene, diethyl ether and diisopropyl. Examples include ether solvents such as ether, glyme, diglyme, triglyme, dioxane and tetrahydrofuran, and amine solvents such as trimethylamine, triethylamine and triphenylamine. These can be used not only alone but also in combination of two or more. Considering the solubility of the reaction product containing the partial hydrolyzate of the organozinc compound contained in the reaction product and the volatility of the organic solvent itself, the organic solvent for forming a thin film is 1,2-diethyl. Ethoxyethane, 1,4-dioxane, methyl monoglyme, ethyl monoglyme and methyldiglyme are preferred.
酸化亜鉛薄膜形成用組成物や３Ｂ族元素をドープした酸化亜鉛薄膜製造用組成物の固形分濃度は１〜３０質量％の範囲を任意に選択できる。濃度が高ければ高いほど少ない塗布回数で薄膜を製造できるが、有機亜鉛化合物の部分加水分解物を含む反応生成物の溶解度、透明な酸化亜鉛薄膜の形成の容易さを考慮すると１〜１２質量％が好ましい。 The solid content concentration of the composition for forming a zinc oxide thin film or the composition for producing a zinc oxide thin film doped with a group 3B element can be arbitrarily selected within the range of 1 to 30% by mass. The higher the concentration, the smaller the number of coatings that can be produced, but in consideration of the solubility of the reaction product containing the partial hydrolyzate of the organozinc compound and the ease of forming a transparent zinc oxide thin film, 1-12% by mass Is preferred.
［酸化亜鉛薄膜の製造方法］
本発明の酸化亜鉛薄膜形成用組成物を用いることで、酸化亜鉛薄膜の製造することができる。この製造方法は、具体的には、前記本発明の酸化亜鉛薄膜形成用組成物を基板表面に塗布し、次いで、得られた塗布膜を３００℃以下の温度で加熱して酸化亜鉛薄膜を形成することを含む。
[Method for producing zinc oxide thin film]
By using the composition for forming a zinc oxide thin film of the present invention, a zinc oxide thin film can be produced. Specifically, in this production method, the zinc oxide thin film-forming composition of the present invention is applied to the substrate surface, and then the obtained coating film is heated at a temperature of 300 ° C. or lower to form a zinc oxide thin film. Including doing.
基板表面への塗布は、ディップコート法、スピンコート法、スプレー熱分解法、インクジェット法、スクリーン印刷法等の慣用手段により実施できる。スプレー熱分解法は、基板を加熱しながらできる方法であり、そのため、塗布と並行して溶媒を乾燥させることができ、条件によっては、の溶媒乾燥のための加熱が不要である場合もある。さらに、条件によっては、乾燥に加えて、有機亜鉛化合物の部分加水分解物の酸化亜鉛への反応も少なくとも一部、進行する場合もある。そのため、後工程である、所定の温度での加熱による酸化亜鉛薄膜形成をより容易に行える場合もある。スプレー熱分解法における基板の加熱温度は、例えば、５０〜２５０℃の範囲であることができる。 Application to the substrate surface can be carried out by conventional means such as dip coating, spin coating, spray pyrolysis, ink jet, and screen printing. The spray pyrolysis method is a method that can be performed while heating the substrate. Therefore, the solvent can be dried in parallel with the application, and depending on conditions, heating for drying the solvent may be unnecessary. Furthermore, depending on conditions, in addition to drying, the reaction of the partial hydrolyzate of the organozinc compound with zinc oxide may proceed at least partially. Therefore, the zinc oxide thin film can be formed more easily by heating at a predetermined temperature, which is a subsequent process. The heating temperature of the substrate in the spray pyrolysis method can be in the range of 50 to 250 ° C., for example.
組成物の基板表面への塗布は、窒素等の不活性ガス雰囲気下、空気雰囲気下、水蒸気を多く含有した相対湿度が高い空気雰囲気下、酸素等の酸化ガス雰囲気下、水素等の還元ガス雰囲気下、もしくは、それらの混合ガス雰囲気下等のいずれかの雰囲気下、かつ、大気圧または加圧下で実施することができる。本発明の組成物に含まれる生成物は、雰囲気中の水分と反応し徐々に分解することから、不活性ガス雰囲気下で行うことが好ましい。尚、本発明の方法における塗布は、減圧下でも実施できるが、大気圧で実施するのが装置上も簡便であり好ましい。 The composition is applied to the substrate surface under an inert gas atmosphere such as nitrogen, an air atmosphere, an air atmosphere containing a large amount of water vapor, a high relative humidity, an oxidizing gas atmosphere such as oxygen, or a reducing gas atmosphere such as hydrogen. Or under any atmosphere such as a mixed gas atmosphere thereof and at atmospheric pressure or under pressure. Since the product contained in the composition of the present invention reacts with moisture in the atmosphere and gradually decomposes, it is preferably carried out in an inert gas atmosphere. The coating in the method of the present invention can be carried out under reduced pressure, but it is preferable to carry out at atmospheric pressure because the apparatus is simple and convenient.
基板表面へ塗布液を塗布した後、必要により基板を所定の温度とし、溶媒を乾燥した後、所定の温度で加熱することにより酸化亜鉛薄膜を形成させる。 After coating the coating liquid on the substrate surface, the substrate is brought to a predetermined temperature if necessary, the solvent is dried, and then heated at the predetermined temperature to form a zinc oxide thin film.
溶媒を乾燥する温度は、例えば、２０〜２００℃の範囲であることができ、共存する有機溶媒の種類に応じて適時設定することができる。溶媒乾燥後の酸化亜鉛形成の為の加熱温度は、例えば、２０〜３００℃の範囲であり、好ましくは５０〜２５０℃の範囲であり、さらに好ましくは１００〜２００℃の範囲である。溶媒乾燥温度とその後の酸化亜鉛形成の為の加熱温度を同一にし、溶媒乾燥と酸化亜鉛形成を同時に行うことも可能である。 The temperature at which the solvent is dried can be, for example, in the range of 20 to 200 ° C., and can be set as appropriate according to the type of the organic solvent that coexists. The heating temperature for forming zinc oxide after drying the solvent is, for example, in the range of 20 to 300 ° C, preferably in the range of 50 to 250 ° C, and more preferably in the range of 100 to 200 ° C. It is also possible to perform the solvent drying and the zinc oxide formation at the same time by making the solvent drying temperature the same as the heating temperature for the subsequent zinc oxide formation.
必要に応じて、さらに、酸素等の酸化ガス雰囲気下、水素等の還元ガス雰囲気下、水素、アルゴン、酸素等のプラズマ雰囲気下で、上記加熱を行うことにより酸化亜鉛の形成を促進、または、結晶性を向上させることも可能である。酸化亜鉛薄膜の膜厚には特に制限はないが、実用的には０．０５〜２μｍの範囲であることが好ましい。本発明の製造方法によれば、上記塗布（乾燥）加熱を１回以上繰り返すことで、上記範囲の膜厚の薄膜を適宜製造することができる。 If necessary, further promote the formation of zinc oxide by performing the above heating in an oxidizing gas atmosphere such as oxygen, a reducing gas atmosphere such as hydrogen, and a plasma atmosphere such as hydrogen, argon, oxygen, or the like, or It is also possible to improve crystallinity. Although there is no restriction | limiting in particular in the film thickness of a zinc oxide thin film, It is preferable that it is the range of 0.05-2 micrometers practically. According to the production method of the present invention, a thin film having a film thickness in the above range can be appropriately produced by repeating the application (drying) heating once or more.
この製造方法により形成される酸化亜鉛薄膜は、好ましくは可視光線に対して８０％以上の平均透過率を有するものであり、より好ましくは可視光線に対して８５％以上の平均透過率を有する。「可視光線に対する平均透過率」とは、以下のように定義され、かつ測定される。可視光線に対する平均透過率とは、３８０〜７８０ｎｍの範囲の光線の透過率の平均を云い、紫外可視分光光度計により測定される。尚、可視光線に対する平均透過率は、５５０ｎｍの可視光の透過率を提示することによっても表現できる。可視光線に対する透過率は、スプレー塗布時、もしくは、塗布後の加熱による酸化亜鉛の生成の程度により変化（増大）するので、薄膜の可視光線に対する透過率が８０％以上になるよう考慮してスプレー塗布時、もしくは、塗布後の加熱条件（温度及び時間）を設定することが好ましい。 The zinc oxide thin film formed by this production method preferably has an average transmittance of 80% or more for visible light, and more preferably has an average transmittance of 85% or more for visible light. “Average transmittance for visible light” is defined and measured as follows. The average transmittance for visible light refers to the average of the transmittance of light in the range of 380 to 780 nm, and is measured by an ultraviolet-visible spectrophotometer. The average transmittance for visible light can also be expressed by presenting the visible light transmittance of 550 nm. The transmittance for visible light changes (increases) at the time of spray coating or depending on the degree of formation of zinc oxide by heating after coating, so that the transmittance of the thin film to visible light is considered to be 80% or more. It is preferable to set the heating conditions (temperature and time) at the time of application or after application.
さらにこの製造方法により形成されるドープされた酸化亜鉛薄膜は、３Ｂ族元素をドープしたものであることから、さらに成膜方法を工夫することにより、低抵抗な膜を得られる可能性が高くなる。 Furthermore, since the doped zinc oxide thin film formed by this manufacturing method is doped with a group 3B element, the possibility of obtaining a low-resistance film is increased by further devising the film forming method. .
上記製造方法において基板として用いられるのは、例えば、透明基材フィルムであることができ、透明基材フィルムは、プラスチックフィルムであることができる。プラスチックフィルムを形成するポリマーには、ポリエステル（例えば、ポリエチレンテレフタレート（Ｐ Ｅ Ｔ）、ポリエチレンナフタレート（Ｐ Ｅ Ｎ）、ポリ（メタ）アクリル（例えば、ポリメチルメタクリレート（Ｐ Ｍ Ｍ Ａ））、ポリカーボネート（Ｐ Ｃ）、ポリスチレン、ポリビニルアルコール、ポリ塩化ビニル、ポリ塩化ビニリデン、ポリエチレン、環状ポリオレフィン（Ｃ Ｏ Ｐ）、エチレン−酢酸ビニル共重合体、ポリウレタン、トリアセテート、セロファンを例示することができる。これら中、Ｐ Ｅ Ｔ、Ｐ Ｅ Ｎ、Ｐ Ｃ、Ｐ Ｍ Ｍ Ａが好ましい。透明基材フィルムはポリマーの種類によって無延伸フィルムであっても、延伸フィルムであってもよい。例えば、ポリエステルフィルム例えばＰ Ｅ Ｔ フィルムは、通常、二軸延伸フィルムであり、またＰ Ｃ フィルム、トリアセテートフィルム、セロファンフィルム等は、通常、無延伸フィルムである。 For example, a transparent base film can be used as the substrate in the manufacturing method, and the transparent base film can be a plastic film. Examples of the polymer forming the plastic film include polyester (for example, polyethylene terephthalate (PET), polyethylene naphthalate (PEN), poly (meth) acrylic (for example, polymethylmethacrylate (PMMA)), and polycarbonate. Examples thereof include (PC), polystyrene, polyvinyl alcohol, polyvinyl chloride, polyvinylidene chloride, polyethylene, cyclic polyolefin (COP), ethylene-vinyl acetate copolymer, polyurethane, triacetate, and cellophane. , P E T, P E N, P C, and P M M A. The transparent substrate film may be an unstretched film or a stretched film depending on the type of polymer, for example, a polyester film such as P ET film is usually A stretched film, also P C film, triacetate film, cellophane film, etc. is usually a non-oriented film.
以下に本発明を実施例によってさらに詳細に説明するが、これらの実施例は本発明を限定するものではない。全ての有機亜鉛化合物からの部分加水分解物を含む生成物の調製およびそれを用いた成膜は窒素ガス雰囲気下で行い、溶媒は全て脱水および脱気して使用した。 EXAMPLES The present invention will be described in more detail with reference to examples below, but these examples do not limit the present invention. Preparation of a product containing a partial hydrolyzate from all organozinc compounds and film formation using the product were performed in a nitrogen gas atmosphere, and all solvents were used after dehydration and deaeration.
［実施例１］
１，２−ジエトキシエタン３０．０ｇにジエチル亜鉛２．６０ｇを加えた。十分攪拌した後、１２℃まで冷却した。５．０％水を含有したテトラヒドロフラン溶液を、水のジエチル亜鉛に対するモル比が０．２になるように滴下した。その後、室温(２２℃)まで昇温し室温で１８時間反応させた後、トリメチルインジウムを仕込んだジエチル亜鉛に対してモル比で０．０２になるよう添加した。以上のようにして得た溶液をメンブレンフィルターでろ過することにより、インジウムを含有する部分加水分解物溶液（濃度７．９質量%）を３３．１ｇ得た。真空乾燥により溶媒等を除去した後のNMR（ＴＨＦ−ｄ８，ｐｐｍ）測定により図２のスペクトルを得た。
[Example 1]
2.60 g of diethyl zinc was added to 30.0 g of 1,2-diethoxyethane. After sufficiently stirring, it was cooled to 12 ° C. A tetrahydrofuran solution containing 5.0% water was added dropwise so that the molar ratio of water to diethylzinc was 0.2. Thereafter, the temperature was raised to room temperature (22 ° C.) and reacted at room temperature for 18 hours, and then added in a molar ratio of 0.02 with respect to diethylzinc charged with trimethylindium. The solution obtained as described above was filtered with a membrane filter to obtain 33.1 g of a partial hydrolyzate solution (concentration 7.9% by mass) containing indium. The spectrum of FIG. 2 was obtained by NMR (THF-d8, ppm) measurement after removing the solvent and the like by vacuum drying.
上述のように得た部分加水分解物を含む生成物含有塗布液をスピンコート法により１８ｍｍ角のコーニング１７３７ガラス基板表面上に塗布した。その後、基板を３５０℃、５分加熱することで溶媒を乾燥させると同時に酸化亜鉛を形成させた。以上の操作をさらに５回繰り返した。形成された薄膜は、表1のようになった。 The product-containing coating solution containing the partial hydrolyzate obtained as described above was applied onto the surface of an 18 mm square Corning 1737 glass substrate by spin coating. Thereafter, the substrate was heated at 350 ° C. for 5 minutes to dry the solvent and simultaneously form zinc oxide. The above operation was further repeated 5 times. The formed thin film was as shown in Table 1.
［実施例２］
１，２−ジエトキシエタン３０．０ｇにジエチル亜鉛２．６０ｇを加えた。十分攪拌した後、１２℃まで冷却した。５．０％水を含有したテトラヒドロフラン溶液を、水のジエチル亜鉛に対するモル比が０．３９になるように滴下した。その後、室温(２２℃)まで昇温し室温で１８時間反応させた後、トリメチルインジウムを仕込んだジエチル亜鉛に対してモル比で０．０２になるよう添加した。以上のようにして得た溶液をメンブレンフィルターでろ過することにより、インジウムを含有する部分加水分解物溶液（濃度７．９質量%）を３３．３ｇ得た。
[Example 2]
2.60 g of diethyl zinc was added to 30.0 g of 1,2-diethoxyethane. After sufficiently stirring, it was cooled to 12 ° C. A tetrahydrofuran solution containing 5.0% water was added dropwise so that the molar ratio of water to diethylzinc was 0.39. Thereafter, the temperature was raised to room temperature (22 ° C.) and reacted at room temperature for 18 hours, and then added in a molar ratio of 0.02 with respect to diethylzinc charged with trimethylindium. The solution obtained as described above was filtered with a membrane filter to obtain 33.3 g of a partial hydrolyzate solution (concentration 7.9% by mass) containing indium.
上述のように得た部分加水分解物を含む生成物含有塗布液をスピンコート法により１８ｍｍ角のコーニング１７３７ガラス基板表面上に塗布した。その後、基板を３５０℃、５分加熱することで溶媒を乾燥させると同時に酸化亜鉛を形成させた。以上の操作をさらに５回繰り返した。形成された薄膜は、表1のようになった。 The product-containing coating solution containing the partial hydrolyzate obtained as described above was applied onto the surface of an 18 mm square Corning 1737 glass substrate by spin coating. Thereafter, the substrate was heated at 350 ° C. for 5 minutes to dry the solvent and simultaneously form zinc oxide. The above operation was further repeated 5 times. The formed thin film was as shown in Table 1.
［実施例３］
実施例１のように得た部分加水分解物を含む生成物含有塗布液をスピンコート法により１８ｍｍ角のコーニング１７３７ガラス基板表面上に塗布したこと以外は、実施例４と同様の方法で酸化亜鉛を形成させた。形成された薄膜は、表1のようになった。
[Example 3]
Zinc oxide was prepared in the same manner as in Example 4 except that the product-containing coating solution containing the partial hydrolyzate obtained as in Example 1 was applied onto the surface of a 18 mm square Corning 1737 glass substrate by spin coating. Formed. The formed thin film was as shown in Table 1.
［実施例４］
実施例２のように得た部分加水分解物を含む生成物含有塗布液をスピンコート法により１８ｍｍ角のコーニング１７３７ガラス基板表面上に塗布したこと以外は、実施例４と同様の方法で酸化亜鉛を形成させた。形成された薄膜は、表1のようになった。
[Example 4]
Zinc oxide was prepared in the same manner as in Example 4 except that the product-containing coating solution containing the partial hydrolyzate obtained as in Example 2 was applied onto the surface of a 18 mm square Corning 1737 glass substrate by spin coating. Formed. The formed thin film was as shown in Table 1.
［実施例５］
１，２−ジエトキシエタン３０．０ｇにジエチル亜鉛２．６０ｇを加えた。十分攪拌した後、１２℃まで冷却した。５．０％水を含有したテトラヒドロフラン溶液を、水のジエチル亜鉛に対するモル比が０．２になるように滴下した。その後、室温(２２℃)まで昇温し室温で１８時間反応させた後、得た溶液をメンブレンフィルターでろ過することにより、部分加水分解物溶液（濃度７．９質量%）を３３．１ｇ得た。
[Example 5]
2.60 g of diethyl zinc was added to 30.0 g of 1,2-diethoxyethane. After sufficiently stirring, it was cooled to 12 ° C. A tetrahydrofuran solution containing 5.0% water was added dropwise so that the molar ratio of water to diethylzinc was 0.2. Then, after heating up to room temperature (22 degreeC) and making it react at room temperature for 18 hours, 33.1g of partial hydrolyzate solutions (concentration 7.9 mass%) were obtained by filtering the obtained solution with a membrane filter. It was.
上述のようにして得た塗布液を、図１のスプレー製膜装置中スプレーボトルに充填した。１８ｍｍ角のコーニング１７３７ガラス基板を基板ホルダに設置した。窒素ガス雰囲気下で、ガラス基板を２００℃に加熱した。その後、スプレーノズルより塗布液を４ｍｌ／ｍｉｎで８分間噴霧した。形成された薄膜は、表1のようになった。また、薄膜のＸＲＤスペクトルは図３のようになり、酸化亜鉛の形成が確認された。 The coating solution obtained as described above was filled in a spray bottle in the spray film forming apparatus of FIG. An 18 mm square Corning 1737 glass substrate was placed on the substrate holder. The glass substrate was heated to 200 ° C. in a nitrogen gas atmosphere. Thereafter, the coating solution was sprayed at 4 ml / min for 8 minutes from the spray nozzle. The formed thin film was as shown in Table 1. Further, the XRD spectrum of the thin film was as shown in FIG. 3, and the formation of zinc oxide was confirmed.
［実施例６］
１，２−ジエトキシエタン３０．０ｇにジエチル亜鉛２．６０ｇを加えた。十分攪拌した後、１２℃まで冷却した。５．０％水を含有したテトラヒドロフラン溶液を、水のジエチル亜鉛に対するモル比が０．３９になるように滴下した。その後、室温(２２℃)まで昇温し室温で１８時間反応させた後、得た溶液をメンブレンフィルターでろ過することにより、部分加水分解物溶液（濃度７．９質量%）を３３．１ｇ得た。真空乾燥により溶媒等を除去した後のNMR（ＴＨＦ−ｄ８，ｐｐｍ）測定により図２と同様のスペクトルを得た。
[Example 6]
2.60 g of diethyl zinc was added to 30.0 g of 1,2-diethoxyethane. After sufficiently stirring, it was cooled to 12 ° C. A tetrahydrofuran solution containing 5.0% water was added dropwise so that the molar ratio of water to diethylzinc was 0.39. Then, after heating up to room temperature (22 degreeC) and making it react at room temperature for 18 hours, 33.1g of partial hydrolyzate solutions (concentration 7.9 mass%) were obtained by filtering the obtained solution with a membrane filter. It was. A spectrum similar to FIG. 2 was obtained by NMR (THF-d8, ppm) measurement after removing the solvent and the like by vacuum drying.
上述のようにして得た塗布液を、図１のスプレー製膜装置中スプレーボトルに充填した。１８ｍｍ角のコーニング１７３７ガラス基板を基板ホルダに設置した。窒素ガス雰囲気下で、ガラス基板を２００℃に加熱した。その後、スプレーノズルより塗布液を４ｍｌ／ｍｉｎで８分間噴霧した。形成された薄膜は、表1のようになった。 The coating solution obtained as described above was filled in a spray bottle in the spray film forming apparatus of FIG. An 18 mm square Corning 1737 glass substrate was placed on the substrate holder. The glass substrate was heated to 200 ° C. in a nitrogen gas atmosphere. Thereafter, the coating solution was sprayed at 4 ml / min for 8 minutes from the spray nozzle. The formed thin film was as shown in Table 1.
［実施例７］
１，２−ジエトキシエタン３０．０ｇにジエチル亜鉛２．６０ｇを加えた。十分攪拌した後、１２℃まで冷却した。５．０％水を含有したテトラヒドロフラン溶液を、水のジエチル亜鉛に対するモル比が０．２になるように滴下した。その後、室温(２２℃)まで昇温し室温で１８時間反応させた後、トリメチルインジウムを仕込んだジエチル亜鉛に対してモル比で０．０２になるよう添加した。以上のようにして得た溶液をメンブレンフィルターでろ過することにより、インジウムを含有する部分加水分解物溶液（濃度７．９質量%）を３３．１ｇ得た。
[Example 7]
2.60 g of diethyl zinc was added to 30.0 g of 1,2-diethoxyethane. After sufficiently stirring, it was cooled to 12 ° C. A tetrahydrofuran solution containing 5.0% water was added dropwise so that the molar ratio of water to diethylzinc was 0.2. Thereafter, the temperature was raised to room temperature (22 ° C.) and reacted at room temperature for 18 hours, and then added in a molar ratio of 0.02 with respect to diethylzinc charged with trimethylindium. The solution obtained as described above was filtered with a membrane filter to obtain 33.1 g of a partial hydrolyzate solution (concentration 7.9% by mass) containing indium.
上述のようにして得た塗布液を、図１のスプレー製膜装置中スプレーボトルに充填した。１８ｍｍ角のコーニング１７３７ガラス基板を基板ホルダに設置した。窒素ガス雰囲気下で、ガラス基板を２００℃に加熱した。その後、スプレーノズルより塗布液を４ｍｌ／ｍｉｎで８分間噴霧した。形成された薄膜は、表1のようになった。 The coating solution obtained as described above was filled in a spray bottle in the spray film forming apparatus of FIG. An 18 mm square Corning 1737 glass substrate was placed on the substrate holder. The glass substrate was heated to 200 ° C. in a nitrogen gas atmosphere. Thereafter, the coating solution was sprayed at 4 ml / min for 8 minutes from the spray nozzle. The formed thin film was as shown in Table 1.
［実施例８］
１，２−ジエトキシエタン３０．０ｇにジエチル亜鉛２．６０ｇを加えた。十分攪拌した後、１２℃まで冷却した。５．０％水を含有したテトラヒドロフラン溶液を、水のジエチル亜鉛に対するモル比が０．３９になるように滴下した。その後、室温(２２℃)まで昇温し室温で１８時間反応させた後、トリメチルインジウムを仕込んだジエチル亜鉛に対してモル比で０．０２になるよう添加した。以上のようにして得た溶液をメンブレンフィルターでろ過することにより、インジウムを含有する部分加水分解物溶液（濃度７．９質量%）を３３．３ｇ得た。
[Example 8]
2.60 g of diethyl zinc was added to 30.0 g of 1,2-diethoxyethane. After sufficiently stirring, it was cooled to 12 ° C. A tetrahydrofuran solution containing 5.0% water was added dropwise so that the molar ratio of water to diethylzinc was 0.39. Thereafter, the temperature was raised to room temperature (22 ° C.) and reacted at room temperature for 18 hours, and then added in a molar ratio of 0.02 with respect to diethylzinc charged with trimethylindium. The solution obtained as described above was filtered with a membrane filter to obtain 33.3 g of a partial hydrolyzate solution (concentration 7.9% by mass) containing indium.
上述のようにして得た塗布液を、図１のスプレー製膜装置中スプレーボトルに充填した。１８ｍｍ角のコーニング１７３７ガラス基板を基板ホルダに設置した。窒素ガス雰囲気下で、ガラス基板を２００℃に加熱した。その後、スプレーノズルより塗布液を４ｍｌ／ｍｉｎで８分間噴霧した。形成された薄膜は、表1のようになった。また、薄膜のＸＲＤスペクトルは図４のようになり、酸化亜鉛の形成が確認された。 The coating solution obtained as described above was filled in a spray bottle in the spray film forming apparatus of FIG. An 18 mm square Corning 1737 glass substrate was placed on the substrate holder. The glass substrate was heated to 200 ° C. in a nitrogen gas atmosphere. Thereafter, the coating solution was sprayed at 4 ml / min for 8 minutes from the spray nozzle. The formed thin film was as shown in Table 1. Further, the XRD spectrum of the thin film was as shown in FIG. 4, and the formation of zinc oxide was confirmed.
［比較例１］
２−メトキシエタノール２４．１２ｇに、酢酸亜鉛二水和物１．２３ｇと助剤としてエタノールアミン０．３４ｇ、さらに、トリスアセチルアセナトアルミニウムを酢酸亜鉛二水和物に対してモル比０．０２の割合で加え、十分攪拌することでアルミニウムを含有する塗布液を得た。
[Comparative Example 1]
2-methoxyethanol (24.12 g), zinc acetate dihydrate (1.23 g), ethanolamine (0.34 g) as an auxiliary agent, and trisacetylacetonatoaluminum in a molar ratio of 0.02 to zinc acetate dihydrate The coating solution containing aluminum was obtained by adding sufficiently and stirring sufficiently.
そのように得た塗布液を空気中にて用いた以外実施例１と同様な操作を実施して薄膜を得た。５５０ｎｍの可視光透過率は７５％であり、透過率８０％以下の不透明な薄膜しか得られなかった。さらに、膜は不均一であり、XRDからは酸化亜鉛由来のピークは確認されなかった（図示せず）。 A thin film was obtained by carrying out the same operation as in Example 1 except that the coating solution thus obtained was used in the air. The visible light transmittance at 550 nm was 75%, and only an opaque thin film having a transmittance of 80% or less was obtained. Further, the film was non-uniform, and no peak derived from zinc oxide was observed from XRD (not shown).
［比較例２］
トリスアセチルアセナトアルミニウムを塩化ガリウムに変更した以外は、比較例１と同様にしてガリウムを含有する塗布液を得た。
[Comparative Example 2]
A coating solution containing gallium was obtained in the same manner as in Comparative Example 1 except that trisacetylacetonatoaluminum was changed to gallium chloride.
そのように得た塗布液を比較例１と同様な操作を実施して薄膜を得た。また、５５０ｎｍの可視光透過率は６６％であり、透過率８０％以下の不透明な薄膜しか得られなかった。さらに、膜は不均一であり、XRDからは酸化亜鉛由来のピークは確認されなかった（図示せず）。 The coating solution thus obtained was subjected to the same operation as in Comparative Example 1 to obtain a thin film. Further, the visible light transmittance at 550 nm was 66%, and only an opaque thin film having a transmittance of 80% or less was obtained. Further, the film was non-uniform, and no peak derived from zinc oxide was observed from XRD (not shown).
［比較例３］
トリスアセチルアセナトアルミニウムを塩化インジウム四水和物に変更した以外は、比較例１と同様にしてインジウムを含有する塗布液を得た。
[Comparative Example 3]
A coating solution containing indium was obtained in the same manner as in Comparative Example 1 except that trisacetylacetonatoaluminum was changed to indium chloride tetrahydrate.
そのように得た塗布液を比較例１と同様な操作を実施して薄膜を得た。また、５５０ｎｍの可視光透過率は７１％であり、透過率８０％以下の不透明な薄膜しか得られなかった。さらに、膜は不均一であり、XRDからは酸化亜鉛由来のピークは確認されなかった（図示せず）。 The coating solution thus obtained was subjected to the same operation as in Comparative Example 1 to obtain a thin film. Further, the visible light transmittance at 550 nm was 71%, and only an opaque thin film having a transmittance of 80% or less was obtained. Further, the film was non-uniform, and no peak derived from zinc oxide was observed from XRD (not shown).
本発明は、酸化亜鉛薄膜およびドープ酸化亜鉛薄膜の製造分野に有用である。 The present invention is useful in the field of manufacturing zinc oxide thin films and doped zinc oxide thin films.
Claims (8)
Ｒ1−Ｚｎ−Ｒ1 （１）
（式中、Ｒ1は炭素数１〜７の直鎖または分岐したアルキル基である） By adding water to a solution in which the organic zinc compound represented by the general formula (1) is dissolved in an electron-donating organic solvent (excluding an alcohol solvent) , and hydrolyzing the organic zinc compound at least partially. The composition for producing a zinc oxide thin film, comprising a product to be obtained, and having an amount of water added such that a molar ratio to the organozinc compound is in a range of 0.05 to less than 0.4.
R 1 —Zn—R 1 (1)
(In the formula, R 1 is a linear or branched alkyl group having 1 to 7 carbon atoms)
Ｒ1−Ｚｎ−Ｒ1 （１）
（式中、Ｒ1は炭素数１〜７の直鎖または分岐したアルキル基である）
ＭcＸd・ａＨ2Ｏ （２）
（式中、Ｍは３Ｂ族元素であり、Ｘは、ハロゲン原子、硝酸または硫酸であり、Ｘがハロゲン原子または硝酸の場合、ｃは１、ｄは３、Ｘが硫酸の場合、ｃは２、ｄは３、ａは０〜９の整数である。）
（式中、Ｍは３Ｂ族元素であり、Ｒ2、Ｒ3、Ｒ4は独立に、水素、炭素数１〜７の直鎖もしくは分岐したアルキル基、炭素数１〜７の直鎖もしくは分岐したアルコキシル基、カルボン酸基、またはアセチルアセトナート基であり、さらにＬは窒素、酸素またはリンを含有した配位性有機化合物であり、ｎは０〜９の整数である。） An electron-donating organic solvent (alcohol solvent ) containing an organozinc compound represented by the following general formula (1) and at least one group 3B element compound represented by the following general formula (2) or the following general formula (3) And a solution obtained by adding water to at least partially hydrolyzing the organozinc compound, and the group 3B element compound has a molar ratio to the organozinc compound. Is 0.005 to 0.3, and the amount of water added is such that the molar ratio to the total amount of the organozinc compound and the group 3B element compound is 0.05 to less than 0.4. A composition for producing a doped zinc oxide thin film.
R 1 —Zn—R 1 (1)
(In the formula, R 1 is a linear or branched alkyl group having 1 to 7 carbon atoms)
M c X d · aH 2 O (2)
(Wherein M is a group 3B element, X is a halogen atom, nitric acid or sulfuric acid, c is 1, when d is a halogen atom or nitric acid, d is 3, and when X is sulfuric acid, c is 2 D is 3, and a is an integer of 0 to 9.)
(In the formula, M is a group 3B element, R 2 , R 3 , and R 4 are independently hydrogen, a linear or branched alkyl group having 1 to 7 carbon atoms, or a linear or branched group having 1 to 7 carbon atoms. An alkoxyl group, a carboxylic acid group, or an acetylacetonate group, L is a coordinating organic compound containing nitrogen, oxygen or phosphorus, and n is an integer of 0 to 9.)
Ｒ1−Ｚｎ−Ｒ1 （１）
（式中、Ｒ1は炭素数１〜７の直鎖または分岐したアルキル基である）
ＭcＸd・ａＨ2Ｏ （２）
（式中、Ｍは３Ｂ族元素であり、Ｘは、ハロゲン原子、硝酸または硫酸であり、Ｘがハロゲン原子または硝酸の場合、ｃは１、ｄは３、Ｘが硫酸の場合、ｃは２、ｄは３、ａは０〜９の整数である。）
（式中、Ｍは３Ｂ族元素であり、Ｒ2、Ｒ3、Ｒ4は独立に、水素、炭素数１〜７の直鎖もしくは分岐したアルキル基、炭素数１〜７の直鎖もしくは分岐したアルコキシル基、カルボン酸基、またはアセチルアセトナート基であり、さらにＬは窒素、酸素またはリンを含有した配位性有機化合物であり、ｎは０〜９の整数である。） After adding water to a solution in which the organic zinc compound represented by the general formula (1) is dissolved in an electron-donating organic solvent (excluding an alcohol solvent) to hydrolyze the organic zinc compound at least partially, Obtained by adding at least one group 3B element compound represented by the general formula (2) or the general formula (3) so that the molar ratio to the organozinc compound is 0.005 to 0.3. The composition for manufacturing a doped zinc oxide thin film, wherein the molar amount ratio of the water to the organic zinc compound is in the range of 0.05 to less than 0.4.
R 1 —Zn—R 1 (1)
(In the formula, R 1 is a linear or branched alkyl group having 1 to 7 carbon atoms)
M c X d · aH 2 O (2)
(Wherein M is a group 3B element, X is a halogen atom, nitric acid or sulfuric acid, c is 1, when d is a halogen atom or nitric acid, d is 3, and when X is sulfuric acid, c is 2 D is 3, and a is an integer of 0 to 9.)
(In the formula, M is a group 3B element, R 2 , R 3 , and R 4 are independently hydrogen, a linear or branched alkyl group having 1 to 7 carbon atoms, or a linear or branched group having 1 to 7 carbon atoms. An alkoxyl group, a carboxylic acid group, or an acetylacetonate group, L is a coordinating organic compound containing nitrogen, oxygen or phosphorus, and n is an integer of 0 to 9.)
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| PCT/JP2011/074022 WO2012053542A1 (en) | 2010-10-20 | 2011-10-19 | Composition for production of oxide thin films and method for producing oxide thin films by using said composition |
| CN201180050611.1A CN103153865B (en) | 2010-10-20 | 2011-10-19 | The preparation method of the sull of sull preparation compositions and use said composition |
| KR1020137012716A KR101861394B1 (en) | 2010-10-20 | 2011-10-19 | Composition for production of oxide thin films and method for producing oxide thin films by using said composition |
| TW100138140A TWI543940B (en) | 2010-10-20 | 2011-10-20 | A composition for producing an oxide film, and an oxide thin film using the same |
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