TW201106024A - Color conversion filter substrate - Google Patents

Color conversion filter substrate Download PDF

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Publication number
TW201106024A
TW201106024A TW099106936A TW99106936A TW201106024A TW 201106024 A TW201106024 A TW 201106024A TW 099106936 A TW099106936 A TW 099106936A TW 99106936 A TW99106936 A TW 99106936A TW 201106024 A TW201106024 A TW 201106024A
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Taiwan
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color
substrate
bank
changing
layer
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TW099106936A
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Chinese (zh)
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TWI470283B (en
Inventor
Shinichi Nakamata
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Fuji Electric Holdings
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • H10K59/122Pixel-defining structures or layers, e.g. banks
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00Optical elements other than lenses
    • G02B5/20Filters
    • G02B5/201Filters in the form of arrays
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00Optical elements other than lenses
    • G02B5/20Filters
    • G02B5/22Absorbing filters
    • G02B5/223Absorbing filters containing organic substances, e.g. dyes, inks or pigments
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/30Organic light-emitting transistors

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

Provided is a color conversion filter substrate comprising a substrate, a plurality of color filters formed in at least an auxiliary pixel portion on the substrate and having different transmission wavelengths, banks formed in a non-auxiliary pixel portion above the substrate and made of a hardening resin, a color conversion film formed in a slit pattern in a region which is above at least some of the color filters and defined between the banks by an ink-jet method, for absorbing the light of a light source and emitting a light having a wavelength distribution different from an absorption wavelength, and a spacer formed on at least some of the banks by a photolithographic method. The bank forming the spacer is more extended in horizontal directions, as viewed in a side cross-section, than the remaining banks. The color conversion filter substrate having a high color conversion efficiency can be properly applied to the mass production of large-screen displays.

Description

201106024 六、發明說明: 【發明所屬之技術領域】 本發明係關於變色濾光片基板。更詳細地說,本發明 之變色濾光片基板,係關於變色效率高,可適合用於大畫 面顯示器的量產的變色濾光片基板。 【先前技術】 作爲使用有機EL( electroluminescent ,電致發光) 元件實現多色發光的方法之一,有變色法。變色法,係把 有機EL元件之吸收發光,進行與吸收波長不同的波長分 布的發光之變色膜配設於有機EL元件的前面表現多色的 方法,作爲變色膜有對高分子樹脂分散螢光色素者。關於 變色法,例如已揭示有以下之技術。 於專利文獻1,揭示著把(a )羅丹明(rhodamine ) 系螢光顏料、(b )於藍色區域有吸收且誘發對該羅丹明 系螢光顏料之能量移動或再吸收之螢光顏料,分散於透光 性媒體者所構成的紅色螢光變換膜。 於使用此方式的場合,來自有機EL元件的發光爲單 色即可,所以製造很容易,因此對大畫面顯示器的應用受 到積極的檢討。此外,此方式,具有可藉由組合變色膜與 彩色濾光片,而得到良好的色再現性等優點。 然而,爲了要藉由專利文獻1所揭示的變色膜,獲得 優異的變色效率,變色膜的厚度必須要厚到1 Ομιη程度。 此外,爲了於此變色膜的上面形成有機EL元件,必須要 201106024 有使變色膜的表面凹凸變得平滑的技術,及遮斷由變色膜 所產生的水分的技術等特殊的技術。要採用這些附隨的特 殊技術,形成大畫面顯示器時,會導致相當程度的成本提 高。 作爲這樣的成本提高的問題之解決策略,係於有機 EL元件的電極間以乾式製程配設具有變色功能之層的技 術,具體而言,揭示著以下的技術。 於專利文獻2,揭示著由有機化合物所構成相互被層 積的螢光體發光層及正孔輸送層被配設於陰極與陽極間的 構成之電場發光元件,且前述螢光體發光層係相互被層積 且陰極側比陽極側電氣輸送能力更大之一對螢光體薄膜所 構成的,電場發光元件。根據專利文獻2,選擇最適切的 變色材料的話,應該可以實現沒有水分發生的問題之高效 率且極薄(Ιμηι以下)之變色元件。 此外,作爲進而改良被揭示於專利文獻2的技術之技 術’被提出把變色膜之構成材料油墨化,以噴墨法圖案化 該膜之方法。 然而,藉由噴墨法,進行精密圖案化時,必須要使微 量液滴精密地吐出,所以成爲增加黏度的原因之固形物成 分比不能夠太高。有鑑於爲了確保必要的膜厚所需要的液 滴的體積必然會是大的,因此作爲形成精度佳的圖案的技 術,揭示了以下的技術。 於專利文獻3,揭示著藉由墨水吐出法對同一畫素內 至少吐出2次以上包含有機EL材料之墨水組成物而製膜 201106024 ,將墨水組成物吐出至以堤區隔的區域內,第η次(n爲 吐出次數)之吐出點徑,與堤徑相比爲相等或者更小的有 機EL元件之製造方法。 然而,形成堤的場合’不僅在特定其形狀上,在濕潤 性的控制上也是重要的。具體而言,於滴下墨水的區域, 使其壁面對墨水爲撥液性的狀態,使下底對墨水爲親液性 的狀態是重要的。關於這樣的濕潤性的技術,被揭示有以 下的技術。 於專利文獻4,揭示著在以無機材料構成的堤形成面 以有機材料形成堤,以氟系氣體爲導入氣體而在氟過多的 條件下進行電漿處理,對以堤包圍的區域塡充薄膜材料液 形成薄膜層’於具有以有機物形成的堤的基板上,進行氧 氣電漿處理後,進行氟系氣體電漿處理之薄膜形成方法。 如此般’含變色膜的基板(變色濾光片基板),有各 種技術被揭示,藉由把變色濾光片基板,與有機E L基板 貼合,可得有機EL顯不器。 例如,把變色濾光片基板使用於頂放射構造之有機 EL顯不器的場合,貼合有機EL基板(例如,含TFT兀 件的基板)與變色濾光片基板之構成係一般的。作爲貼合 方法,可以使用藉著液晶之一般的真空滴下貼合法等。 在此,於貼合時,於變色濾光片基板,形成埋住與有 機EL基板之間的間隙之間隙層。於此間隙層,一般使用 黏接劑等之固體,但亦可使用液體或氣體。 於間隙層之形成,精密地控制兩基板間的間隙的場合 201106024 ,在彩色濾光片或變色膜之上,或者在這些的周 隔件係屬已知,例如,有以下的技術被提出。 於專利文獻5,揭示著於位在有機EL層的 的透明基板上,具備與前述有機EL層對向而由 複數之著色樹脂區域所構成的有效區域,與中介 機EL層與前述透明基板之間的間隔件;前述間隔 於前述黑矩陣上,前述間隔件的頂面的面積爲^ 效區域的面積爲S的場合,A對S之比率R滿足 件:0.0 5 %各R $ 1 %之彩色濾光片。 間隔件的形成理由如下所述。亦即,於兩基 隙太寬的場合,會有光線侵入旁邊的副畫素部之 的問題,另一方面該間隙太窄的場合,會有產生 或者往發光區域之機械的接觸等問題。 此外,特別是於使用變色方式的有機EL顯 射至變色膜的光量對於變色效率影響很大,所以 間隔件來精密控制間隙。 [專利文獻1]日本專利特開平08 -2 8603 3號ί [專利文獻2]曰本專利特開平02-2 1 6790號 [專利文獻3]日本專利特開200 1 -29 1 5 83號ί [專利文獻4 ]日本專利特開2 0 0 0 - 3 5 3 5 9 4號ί [專利文獻5 ]日本專利特開2 0 0 4 - 3 1 1 3 0 5號f 【發明內容】 [發明所欲解決之課題] 圍形成間 發光方向 黑矩陣與 於前述有 件被形成 ,前述有 以下的條 板間之間 產生串訊 干涉影響 示器,入 必須根據 .報 報 .報 .報 .報 201106024 然而’於頂放射型有機EL顯示器,在前述間隙層含 有黏接劑等固體的場合,可以提高其折射率,結果可實現 優異的光取出效率。 這是因爲透明電極層,以及變色膜及彩色濾光片的折 射率爲1 . 5〜2.0程度,但相對於氮氣及非活性液體的折 射率爲1 · 〇〜1 · 3程度,環氧系黏接劑等之折射率爲1 . 5以 上。 此外’於間隙層含有黏接劑等固體的場合,可以實現 有機EL顯示器之優異的機械強度。 然而’一般而言,黏接劑等樹脂與液晶等液體相比黏 度很高’在貼合有機EL基板與變色濾光片基板時欠缺擴 展性。 特別是變色膜是藉由噴墨法形成的變色濾光片基板的 場合’爲了要精度佳地形成變色膜而在變色濾光片基板側 形成堤。因此,貼合兩基板時,雖往彩色濾光片之線方向 間隙層(樹脂)的擴展沒有被阻礙,但是對與前述方向垂 直的方向’樹脂必須要越過堤而擴展。因而,單純的滴下 貼合’因爲樹脂不會擴展至外周密封材內側之各個角落, 所以即使是2〜3英吋程度的面板,也有發生畫面之一部 分沒有以樹脂埋沒之不良的可能。 這樣的樹脂的擴展之調整,應與光學間隙調整一倂進 行’如前所述,彩色濾光片或變色膜之上,或者於其周圍 形成間隔件的技術係屬已知。間隔件,可以在堤上,用光 硬化性或光熱倂用型硬化性樹脂等以光蝕刻法形成。 -9- 201106024 通常,間隔件隊顯示部(畫素)係以10〜20%之比例 塗佈於到處存在的堤上。因此,特別是畫素尺寸變小時, 相對於堤的寬幅爲1 0〜1 5 μηι間隔件的寬幅成爲1 Ο μιη前 後,堤及間隔件的尺寸變成非常接近’有間隔件在堤上突 出等引起位置偏移之虞。在這樣的場合’間隔件的高度會 產生不均,所以有必要講究對準光罩的高的位置之精度。 作爲關於該位置對準的解決之道’有在不塗佈變色油 墨的畫素,形成由透明的樹脂材料或與堤相同的材料所構 成的埋入部,於其上形成間隔件之手段。 此處,於兩基板之貼合後,防止來自鄰接於應與變色 濾光片基板之副畫素一對一對向的有機EL基板的副畫素 之副畫素的發光,進入變色基板之上述副畫素而產生的混 色是很重要的。 然而,關於前述混色之防止,在應防止以噴墨法塗佈 的變色膜之油墨漏溢,而使堤之高度爲相當大的場合,在 黑色等之堤的著色會變得困難。因此,僅於前述埋入部使 用透明材料也是被考慮的,但於堤的形成之外進而形成埋 入部,會有招致工程量增大的結果,導致實質上的成本提 高。 亦即,被期待著變色效率高、量產性優異、安定性高 的有機EL顯示器之生產。 本發明有鑑於前述情形,目的在提供能夠實現低成本 的大畫面顯示器之量產,特別是提供變色效率高的變色媳 光片基板。 -10- 201106024 [供解決課題之手段] 本發明係關於變色濾光片基板,其係具備:基板、被 形成於前述基板上之至少副畫素部之具有不同的透過波長 的複數彩色濾光片、被形成於前述基板的上方之非副畫素 部之由硬化性樹脂所構成的堤(bank )、藉由噴墨法且以 細長條(slit )圖案形成在至少一部分之彩色濾光片之上 方區域中之被區劃於前述堤之間的區域用於吸收光源的光 而發出與吸收波長不同的波長分布的光之變色膜、及於至 少一部份之堤上藉由光蝕刻法形成的間隔件之變色濾光片 基板;其係形成前述間隔件之堤,與其他堤相比,於側面 剖視圖觀察時,在水平方向上伸出之變色濾光片基板(型 式η 。本發明之變色濾光片基板,可以作爲內藏於個人 電腦等的多色發光有機EL裝置之構成要素而利用。 於這樣的變色濾光片基板,前述硬化性樹脂,可以採 用光硬化性樹脂或光熱倂用硬化性樹脂。此外,前述堤, 可以形成於被形成在前述基板上的黑矩陣的上方。進而, 最好是前述堤之至少一部分被著色,前述著色是著黑色, 且前述提之可見區域之透過率爲10%以下爲更佳》 其次,本發明包含一種變色濾光片基板(型式2), 其特徵爲具備:基板、被形成於前述基板上之至少副畫素 部之具有不同的透過波長的複數彩色德光片、被形成於前 述基板的上方之非副畫素部之由硬化性樹脂所構成的堤( bank )、藉由噴墨法且以細長條(slit )圖案形成在至少 一部分之彩色濾光片之上方區域中之被區劃於前述堤之間 -11 - 201106024 的區域用於吸收光源的光而發出與吸收波長不同的波長分 布的光之變色膜、形成在位於前述區域中之不形成前述變 色膜之區域的兩側之堤間之由光硬化性樹脂或光熱倂用硬 化性樹脂所構成之埋入構件、及於前述埋入構件上藉由光 蝕刻法形成的間隔件;前述堤與前述埋入構件係同時被形 成的。型式2之變色濾光片基板,也與型式1之變色濾光 片基板同樣,可作爲內藏於個人電腦等的多色發光有機 EL裝置的構成要素來利用。 於這樣的變色濾光片基板,前述光硬化性樹脂或光熱 倂用硬化性樹脂之硬化後之對波長區域3 50〜500nm之光 的折射率,最好至少比1 .5更大。進而,前述埋入構件, 最好是在側方剖視時,含有1 Ομπα以上對堤上面而言爲-1 〜+ 1 μ m之平坦部。 [發明之效果] 本發明之變色濾光片基板,於前述型式1、2之任一 構成,都可以實現以低成本達成大畫面顯示器之量產,特 別是可以實現優異的變色效率。 【實施方式】 [供實施發明之最佳型態] <變色濾光片基板及其形成方法> 圖1 A〜圖1 C係顯示本發明之變色濾光片基板之一例 之圖,圖1A爲平面圖,圖1B爲圖1A之IB-IB線剖面圖 -12- 201106024 ,圖1C爲圖1A之IC-IC線剖面圖。根據這些圖所示, 變色濾光片基板1 〇a,爲具備透明基板1 2、被形成於透明 基板1 2上之除了副畫素部以外的部分(非副畫素部)之 黑矩陣1 4、以覆蓋副畫素部的方式條紋狀被形成於其上 的紅色、綠色、藍色之各彩色濾光片16R、16G、16B, 及以覆蓋黑矩陣14及彩色濾光片16(R、G、B)的方式 進而被形成於其上的親液層18、被形成於親液層18上之 非副畫素部的堤20、及被形成於非副畫素部且爲區劃出 不形成後述之變色膜的區域之堤20上的光間隔件22、被 形成於藉由親液層1 8及堤20所區劃的區域之紅色及綠色 變換膜24R、24G、以覆蓋堤20、光間隔件22、變色膜 24(R、G)、及未被形成變色膜的親液層18的部分的方 式被形成之障壁層26之構造體。 (透明基板1 2 ) 作爲透明基板1 2,可以使用玻璃、聚醯亞胺、聚碳 酸酯、聚對苯二甲酸乙二酯、聚萘二甲酸乙二酯( Polyethylene Naphthalate,PEN)、聚對苯二甲酸 丁二醋 、聚苯颯(PPSU )等高分子材料。透明基板1 2亦可爲剛 直者,亦可具有可撓性。透明基板1 2最好是對可見光具 有80%以上的透過率。 (黑矩陣1 4 ) 黑矩陣14,係以提高後述之彩色濾光片16(R、G、 -13- 201106024 B)之配設位置的對比爲目的而配設的構成要素。黑矩陣 14係把不透過可見區域的光的材料形成爲狹縫圖案。 於黑矩陣14之材料,可以使用在丙烯酸型樹脂等感 光性樹脂中混合供黑色化之用的著色劑者。此外,亦可適 用使用於液晶顯示裝置的黑矩陣材料。 黑矩陣14,可以在透明基板12上,藉由旋轉塗布法 等濕式製程之塗布手段進行塗布,加熱乾燥之後,藉由光 蝕刻法進行圖案化而形成。 又’黑矩陣14,藉由因應需要而設置,可以有效地 防止來自鄰接的畫素的光之繞入,亦即,來自鄰接的副畫 素的發光’漏入對應於旁邊的副畫素之彩色濾光片層。藉 此’可以實現高的對比。此外,黑矩陣14的形成,在減 低由於後述之各彩色濾光片16(R、G、B)的形成所產 生的階差這一點也有效。 (彩色濾光片16(R、G、B)) 彩色濾光片16(R、G、B),係藉由遮斷特定波長 而提高具有一定區域的波長的光之色純度之用的構成要素 。彩色濾光片16(R、G、B)可以在透明基板12上使用 平面面板顯示器用的材料來形成,例如,使顏料分散於光 阻之顏料分散型材料。 彩色濾光片16’ 一般爲排列透過600nm以上的波長 的光之紅色濾光片16R、透過500〜600tim的波長的光之 綠色濾光片1 6G、及透過400〜5 5 0nm的波長的光之藍色 -14- 201106024 濾光片16B之構造。彩色濾光片16(R、G、B)之形成 方法’可以使用塗布法,特別是以使用光學製程爲佳。 (親液層1 8 ) 親液層1 8,如後所述,係在變色膜24 ( R、G )係以 噴墨法形成的場合,供提高變色膜24 ( R、G )之濕潤性 之用而配設的構成要素。 於親液層1 8 ’可以因應於作爲變色膜2 4 ( R、G )使 用的油墨的極性’而使用藉由濺鍍法或化學氣相沉積法( CVD法)而形成的SiOx膜,或SiNx膜。 又,不形成親液層18的場合,藉由電漿處理等,可 以適切地控制彩色濾光片1 6 ( R、G ' B )之上面與後述 之堤20之濕潤性。 (堤 20) 堤20 ’係爲了防止起因於後述的變色膜24 ( R、G ) 之油墨流入鄰接的其他副畫素導致混色的發生而配設的構 成要素。 於圖1A〜圖1C所示之例,係以藉由噴墨法形成變色 膜24(R、G)爲前提。因此,要精密地圖案化變色膜24 (R、G ),必須要精密塗出微量液滴。因而,針對使用 於變色膜24 (R、G)之油墨,會成爲其增黏的原因之油 墨固形成分比不可以過度地大。亦即,對於必要膜厚而言 液滴的體積必然會變大,所以爲了防止往旁邊的副畫素混 -15- 201106024 色,高精度地形成各副畫素之圖案,堤20之形成是有效 的。 此外,作爲堤20的圖案形狀,有於各副畫素(約略 對應於各色的彩色濾光片16(R、G、B)支配設位置的 區域)劃分出的狹縫圖案,及於彩色濾光片16(R、G、 B)之各條線劃分出的狹縫圖案。爲了不妨礙塡充密封材 的擴展,且防止往旁邊的副畫素混色,最好是採用狹縫圖 案形狀。 此處,於圖1 A〜圖1 C所示之例,形成後述之間隔件 22之堤(於圖1C,係由右起第2個堤)與其他堤相比, 側方向剖視係往水平方向伸出的形狀。藉此,於側方向剖 視’藉由於水平方向上形成寬幅較寬的作爲底座之堤,可 以提高間隔件2 2的形狀精度。 堤20的形成,可以光及/或熱處理光硬化性或者光熱 倂用型硬化性樹脂,使產生自由基種或離子種而使其聚合 或架橋’而使其變成不溶不融。此外,該光硬化性或光熱 倂用I型硬化性樹脂,爲了進行圖案化在進行硬化之前最好 成爲對有機溶媒或鹼性溶液爲可溶性》 於圖1A〜圖1C所示之變色濾光片基板10a,可以作 胃堤20的材料使用的光硬化性或光熱倂用型硬化性樹脂 ’具體而言,可以舉出以下幾種。亦即,可以舉出(1) 光處理或熱處理複數具有烯丙基或甲基烯丙基的壓克力系 多官能基單體及寡聚體,與由光或熱聚合開始劑所構成的 組成物膜’使產生光自由基或熱自由基而聚合者,(2) -16- 201106024 藉由光或熱處理聚乙烯桂皮酸酯與增感劑所構成的組成物 使二聚化而架橋者,(3)藉由光或熱處理使鏈狀或環狀 烯烴與雙疊氮基所構成的組成物膜使產生氮烯(nitrene ) ,而與烯烴架橋者,以及(4)藉由光或熱處理具有環氧 基的單體與光氧產生劑所構成的組成物膜,使產生酸(陽 離子)而使聚合者等等。 特別是,前述(1 )之光硬化性或光熱倂用型硬化性 樹脂可進行高精細的圖案化,在耐溶劑性、耐熱性等可信 賴性的方面也較佳。 其他,也可以使用聚碳酸酯(PC)、聚對苯二甲酸 乙二酯(PET)、聚醚颯、聚乙烯醇、聚苯醚、聚醯胺、 聚醚亞醯胺、降冰片烯系樹脂、甲基丙烯酸系樹脂、異丁 烯吳水馬來酸共聚合樹脂、環狀烯烴系等之熱塑性樹脂, 環氧樹脂、苯酚樹脂、胺甲酸乙酯樹脂、丙烯酸樹脂、乙 烯基酯樹脂、醯亞胺系樹脂、胺甲酸乙酯系樹脂、尿素樹 脂、二聚氰胺〔甲醛〕樹脂等之熱固性樹脂,或者聚苯乙 烯、聚丙烯、聚碳酸酯等含有3官能基或4官能基之烷氧 基矽烷的高分子混合物等。 以上’係前述型式1的變色濾光片基板之堤2〇的型 態’在側方剖視,針對水平方向伸出的堤的部分,可作爲 與堤2 0不同的構件來形成,特別是使該伸出部延伸至鄰 接的堤’結果也可以使伸出部作爲埋入構件而形成,作爲 前述型式2的型態。 關於is樣的埋入構件的形成材料,及形成方法等各條 -17- 201106024 件’係與堤20之各條件爲相同條件或者依據此之條件, 特別是’同時形成堤20與埋入構件,從經濟性的觀點來 看是較佳的。 此外’作爲埋入構件使用的場合,光硬化性樹脂或光 熱倂用硬化性樹脂之硬化後之對波長區域3 50〜500nm之 光的折射率,最好至少比1 .5更大。如此般,藉由使用折 射率更高的材料,提高往變色濾光片基板之來自有機電致 發光元件基板的光的入射效率。 進而,埋入構件,最好是在側方剖視時,含有1 0 μπι 以上對堤上面而言爲-1〜+ 1 μιη之平坦部。這樣的場合, 於產生光飩刻導致圖案位置偏移的場合,也可以提高間隔 件22的形狀精度。 其次,前述之堤20,如在圖2Α〜圖2C所示之例那 樣,最好是著色其外周部分。亦即,圖2 Α〜圖2C係顯示 本發明之變色濾光片基板之其他例之圖,圖2A爲其平面 圖,圖2B爲圖2A之IIB-IIB線剖面圖,圖2C爲圖2A 之IIC-11C線剖面圖。道些之圖所示的變色濾光片基板 l〇b之各構成要素12〜26之使用材料及形成條件等,與 前述之未著色的場合之變色濾光片基板(l〇a)(圖1A〜 圖1C)之材料與條件是相同的。 在圖2A〜圖2C所示之例,除了圖1 A〜圖1C所示之 例的構成以外,還有堤20的側方及上方之各外周部被著 色,藉此形成堤著色部20a。 此著色,使堤20之可見區域的透過率減低,係以抑 -18- 201106024 制往鄰接的其他副畫素漏光導致的色度降低爲目的而形成 的部分。 這樣的堤著色部20a的著色,可以藉由使顏料或染料 分散於透明的堤材料’或者於堤20覆蓋被著色之膜而進 行。使顏料或染料分散於堤材料,減少製造步驟數從經濟 的觀點來看是較佳的。 例如’於前述著色,可以採用滿足使可見區域的透過 率降低而抑制色度減低之色,特別是採用黑色,使堤2 〇 之可見區域的透過率爲10 %以下爲較佳。 (光間隔件22) 一般而言·’把變色濾光片基板使用於頂放射型之有機 EL顯示器的場合,貼合有機El基板(例如,TFT基板) 與變色濾光片基板形成該顯示器。 此時,於精密控制有機EL基板與變色濾光片基板之 貼合時之間隙的場合,有在彩色濾光片或變色膜之上,或 者於其周圍設間隔件的情形。這在間隙太大的場合,光會 侵入旁邊的副畫素發生串訊的問題,另一方面,太窄的場 合,會產生干涉的影響或是發生往發光區域的機械接觸。 特別是在圖1A〜圖1C所示的變色方式之有機EL顯 示器,入射至變色膜24 ( R、G )的光量對變色效率影響 很大,所以根據間隔件22之間隙控制變得重要。 間隔件22的形狀,可以是寬幅1 Ομπι前後的圓形’ 矩形或順應這些之形狀,使其成爲不影響塡充樹脂往與堤 -19- 201106024 20直交的方向(圖1B、圖1C之水平方向)擴展的形狀 是很重要的。此外’爲了使光不侵入旁邊的副畫素產生串 訊,有必要使堤2 0與間隔件22分別之單體重疊形成的間 隙在1 Ομιη以下,而且被形成於堤20上的間隔件22的高 度最好在1〜3μηι程度。 進而,要不妨礙塡充樹脂往與堤20直交的方向擴展 ,且在顯示器的面板面內貼合使間隙確保爲一樣,最好是 在彩色濾光片16(R、G、Β)或者變色膜24(R、G)之 上,或其周圍離散地形成間隔件爲較佳。具體而言,每1 畫素(每3個副畫素)形成1個間隔件2 2的程度是較佳 的。 然而,對顯示部(畫素部)以1 0〜20%之比例離散地 形成的堤2 0上塗佈間隔件2 2的場合,特別是隨著畫素部 的精細度變高,對堤20的寬幅1〇〜Ι5μηι間隔件22的寬 幅爲1 0 μηι前後,這些的大小變得非常接近。因此,在堤 20上引起間隔件22伸出等位置偏移的場合,間隔件22 的高度會產生不均,所以有必要提高光罩的位置對準精度 〇 間隔件22的形成,可以光及/或熱處理光硬化性或者 光熱倂用型硬化性樹脂,使產生自由基種或離子種而使其 聚合或架橋,而使其變成不溶不融。此外,該光硬化性或 光熱倂用型硬化性樹脂,爲了進行圖案化在進行硬化之前 最好成爲對有機溶媒或鹼.性溶液爲可溶性。 一般而言,間隔件22係散佈玻璃珠等而形成的。在 -20- 201106024 這樣的形成態樣’通常堤2 0與彩色濾光片1 6 ( R、G、B )之高度不同’而且間隔件22係不經意地被配置於堤20 上或彩色濾光片16(R、G、B)上。因此,彩色濾光片 1 6 ( R、G、B )比堤20還要低的場合,被配置於彩色濾 光片1 6 ( R、G、B )上的間隔件22的高度變得比較小。 特別是在採用變色方式的有機EL顯示器,入射至變色膜 的光量對變色效率影響很大。因此,必須精密地根據間隔 件來控制間隙,必須要使間隔件22保持於同一高度。亦 即,作爲間隔件22,以使用能夠以光蝕刻法形成的材料 是比較好的。 於圖1A〜圖1C所示之變色濾光片基板l〇a,可以作 爲光間隔件22的材料使用的光硬化性或光熱倂用型硬化 性樹脂,具體而言,可以舉出以下幾種。亦即,可以舉出 (1) 光處理或熱處理複數具有烯丙基或甲基烯丙基的壓 克力系多官能基單體及寡聚體,與由光或熱聚合開始劑所 構成的組成物膜,使產生光自由基或熱自由基而聚合者, (2) 藉由光或熱處理聚乙烯桂皮酸酯與增感劑所構成的 組成物使二聚化而架橋者,(3)藉由光或熱處理使鏈狀 或環狀烯烴與雙疊氮基所構成的組成物膜使產生氮烯( nitrene ),而與烯烴架橋者,以及(4)藉由光或熱處理 具有環氧基的單體與光氧產生劑所構成的組成物膜,使產 生酸(陽離子)而使聚合者等等。 特別是,前述(1 )之光硬化性或光熱倂用型硬化性 樹脂可進行高精細的圖案化,在耐溶劑性、耐熱性等可信 -21 - 201106024 賴性的方面也較佳。 其他,也可以使用聚碳酸酯(PC)、聚對苯二甲酸 乙二酯(PET )、聚醚颯、聚乙烯醇、聚苯醚、聚醯胺、 聚醚亞醯胺、降冰片烯系樹脂、甲基丙烯酸系樹脂、異丁 烯吳水馬來酸共聚合樹脂、環狀烯烴系等之熱塑性楱f脂, 環氧樹脂、苯酚樹脂、胺甲酸乙酯樹脂、丙烯酸樹脂、乙 烯基酯樹脂、醯亞胺系樹脂、胺甲酸乙酯系樹脂、尿素樹 脂、三聚氰胺〔甲醛〕樹脂等之熱固性樹脂,或者聚苯乙 烯、聚丙烯、聚碳酸酯等含有3官能基或4官能基之院氧 基矽烷的高分子混合物等。 又,間隔件2 2,於其材料塗佈時,只要不會藉由堤 20而產生膜彈起及/或膜剝離的話,可以採與堤20相同的 材質,也可採不同的材質。 (變色膜24 ( R、G )) 變色膜24 ( R、G )係發揮吸收來自光源的光,而發 出不同的波長分布的螢光之功能的構成要素。 作爲可以適用於變色膜24 (R、G)的材料,可以舉 出螢光色素,如Alq3 (三(8-羥基喹啉)鋁錯體)等銘螯 合物系色素 ’ 3- ( 2-Benzothiazolyl) -7- ( diethylamino) coumarin (香豆素 6) 、3-( 2-Benzimidazolyl ) -7-( diethylamino) coumarin(香豆素 7)、香豆素 135 等香豆 素系色素,溶劑黃43、溶劑黃44之類的萘二甲亞醯胺( naphthalimide ) 系色素之類的低分子系之有機登光色素 -22- 201106024 ’聚苯撐、聚醯胺、聚芴爲代表的高分子螢光材料。 此外,因應必要也可混合複數這些色素而使用。這樣 的混合手段,係在由藍色往紅色變換時等,波長移位寬幅 很寬的場合是有效的手段。 於圖1A〜圖1C所示的變色濾光片基板之形成,變色 膜24 ( R、G )係藉由噴墨法形成。因此,圖案化時有必 要把這些螢光材料調製成油墨,具體而言係使前述的螢光 材料溶解至溶媒。 作爲溶媒,係可以溶解螢光材料者之中,可以適當選 擇適合於使用螢光材料者。例如,可以使用甲苯等非極性 有機溶媒、氯仿、醇、酮系等極性有機溶媒等。在調整油 墨的黏度、蒸氣壓、及/或溶解性的場合,最好是混合複 數種溶媒而使用。 (障壁層26 ) 障壁層26 ’係在如前所述圖案化的變色膜24 ( R、G )是由於水及/或氧氣的存在而劣化的物質的場合下,防 止水等往變色層24 ( R、G )之浸入,使其性能安定之用 而配設的構成要素。 作爲障壁層2 6的材料,可以使用對氣體及/或有機溶 劑具有障壁性,可見區域的透明性很高(在4 0 0〜7 0 0 n m 之範圍的透過率爲5 0 %以上)者。例如,可以使用S i Ο x 、SiNx、SiNxOy、ΑΙΟχ、TiOx、TaOx、ZnOx 等無機氧化 物、無機氮化物等。 -23- 201106024 作爲障壁層26的形成方法,可以使用濺鍍法、CVD 法、真空蒸鍍法等,要避免對變色膜24 (R、G)的損傷 ,以使用可在1 〇〇°C以下的低溫下實施,而且粒子所具有 的能量比較弱的CVD法較佳。 <有機EL顯示器及其製造方法> 其次,針對使用了前述變色濾光片基板10a,10b ( 不使堤20著色的場合與著了色的場合之任一)之有機EL 顯示器一倂記述。 有機EL顯示器,係貼合變色濾光片基板與有機EL 基板而形成的。 [變色濾光片基板及其製造方法] 關於變色濾光片基板及其製造方法,如前所述,例如 ,把圖1 A〜圖1C及圖2A〜圖2C所示的基板依照前述各 條件等而形成。 [有機EL基板及其製造方法] 如圖3所示,有機EL基板3 0,係於基板3 2,依序 形成開關元件34、平坦化層36、反射電極38、絕緣層40 、有機EL膜42、透明電極44、及無機障壁層46之層積 體。 以下,依該層積順序(由圖3的下側起依序)說明有 機EL基板30的各構成要素32〜46。 -24- 201106024 (基板3 2 ) 有機el顯示器,係貼合前述之變色濾光片基板1 〇a ’ l〇b、與有機EL基板者,由變色濾光片10a,1〇b側取 出光線的裝置。因此,有機E L基板之基板3 2不必要是 透明的。例如,可以使用鋁等金屬材料、玻璃、石英等非 晶質基板,及樹脂等透明或半透明材料。或者,也可以使 用Si、GaAs等結晶性基板之類的不透明材料。進而,除 了玻璃等以外,也可以使用氧化鋁等陶瓷、不銹鋼等金屬 片上施以表面氧化等之絕緣處理的材料、苯酚樹脂等熱硬 化性樹脂,及聚碳酸酯等熱塑性樹脂等》 (開關元件3 4 ) 於基板3 2上,被形成複數之開關元件、以及供使這 些連接至外部驅動電路之用的配線及外部接續端子部分。 開關元件34,例如可以爲薄膜電晶體元件(TFT元 件),係把閘極電極設於閘極絕緣膜之下的底閘極型式, 作爲主動層可以是使用多晶矽膜之構造體。具體而言,可 以使用從前的多晶矽之TFT元件。 又,TFT元件,係於各畫素之端部且爲後述的反射電 極3 8上,以可透過未圖示的配線電極來連接的方式形成 。形成方法,亦可使用習知的任何一種方法。TFT元件的 尺寸爲10〜30μηι程度較佳。亦即,畫素的尺寸,通常爲 20μηιχ20μΓη 〜300μΓηχ300μιη 程度 ° -25- 201106024 (平坦化層3 6 ) 平坦化層3 6,係以覆蓋開關元件3 4的方式形成的任 意選擇的構成要素。 平坦化層3 6,可以採用於該項技術領域已知的任意 樹脂以任意方法來形成。 (鈍化層) 於圖3雖未顯示,但爲了防止由形成平坦化層36的 樹脂產生的氣體之擴散,於平坦化層3 6上任意選擇地配 設鈍化層亦可。 鈍化層,可以是單一層,也可以是由複數之層所構成 的層積體。鈍化層,可以由無機氧化物(Si02等)、無機 氮化物(SiN等)、及無機氧氮化物(SiON等)等來形 成。鈍化層,可以藉由濺鍍法、CVD法等來形成。 又,於平坦化層3 6及鈍化層,設置供連接開關元件 34與後述之反射電極38之用的複數接觸孔是很重要的。 接觸孔的形成,可以使用乾蝕刻等方法。 (下底層)201106024 VI. Description of the Invention: [Technical Field of the Invention] The present invention relates to a color change filter substrate. More specifically, the color-changing filter substrate of the present invention is a color-changing filter substrate which is suitable for mass production of a large-screen display because of high color-changing efficiency. [Prior Art] As one of methods for realizing multicolor light emission using an organic EL (electroluminescent) element, there is a color change method. The color-changing method is a method in which a color-changing film that emits light of an organic EL element and emits light having a wavelength distribution different from the absorption wavelength is disposed on the front surface of the organic EL element, and the color-changing film is dispersed in the polymer resin as a color-changing film. Pigment. Regarding the color changing method, for example, the following techniques have been disclosed. Patent Document 1 discloses a fluorescent pigment which (a) a rhodamine-based fluorescent pigment, (b) absorbs in a blue region, and induces energy movement or resorption of the rhodamine-based fluorescent pigment. A red fluorescent conversion film composed of a light-transmissive media. When this method is used, since the light emission from the organic EL element is a single color, it is easy to manufacture, and therefore the application to the large-screen display is actively reviewed. Further, in this manner, there is an advantage that good color reproducibility can be obtained by combining a color-changing film and a color filter. However, in order to obtain excellent discoloration efficiency by the color-changing film disclosed in Patent Document 1, the thickness of the color-changing film must be as thick as 1 μm. Further, in order to form an organic EL element on the upper surface of the color-changing film, it is necessary to have a special technique such as a technique for smoothing the surface unevenness of the color-changing film and a technique for blocking moisture generated by the color-changing film. The use of these accompanying special techniques to create a large-screen display results in a considerable cost increase. As a solution to the problem of cost improvement, a technique of disposing a layer having a color-changing function in a dry process between electrodes of an organic EL element is disclosed. Specifically, the following technique is disclosed. Patent Document 2 discloses an electric field light-emitting device in which a phosphor light-emitting layer and a positive hole transport layer which are mutually laminated with an organic compound are disposed between a cathode and an anode, and the phosphor light-emitting layer is An electric field light-emitting element composed of a phosphor thin film which is laminated on each other and has a larger electrical conductivity on the cathode side than the anode side. According to Patent Document 2, when an optimum color-changing material is selected, it is possible to realize a color-changing element which is highly efficient and extremely thin (below Ιμηι) without the problem of moisture generation. In addition, as a technique for further improving the technique disclosed in Patent Document 2, a method of ink-forming a constituent material of a color-changing film and patterning the film by an inkjet method has been proposed. However, in the case of precise patterning by the ink-jet method, it is necessary to precisely discharge the fine droplets, so that the solid content ratio which is a cause of increasing the viscosity cannot be too high. In view of the fact that the volume of the droplet required to secure the necessary film thickness is inevitably large, the following technique has been disclosed as a technique for forming a pattern with high precision. Patent Document 3 discloses that an ink composition containing at least two or more organic EL materials is discharged into the same pixel by the ink discharge method to form a film 201106024, and the ink composition is discharged into a region separated by a bank. A method of manufacturing an organic EL element in which the discharge dot diameter of n times (n is the number of discharges) is equal to or smaller than the diameter of the bank. However, the case where the bank is formed is important not only in the specific shape but also in the control of the wettability. Specifically, in the region where the ink is dropped, it is important that the wall faces the ink in a liquid-repellent state, and the lower substrate is in a state of being lyophilic to the ink. Regarding such wettability techniques, the following techniques are disclosed. Patent Document 4 discloses that a bank is formed of an organic material on a bank forming surface made of an inorganic material, a plasma gas is used as an introduction gas, and a plasma treatment is performed under conditions of excessive fluorine, and a region surrounded by the bank is filled with a film. The material liquid forms a thin film layer 'on a substrate having a bank formed of an organic substance, and subjected to oxygen plasma treatment, and then subjected to a fluorine-based gas plasma treatment. As described above, a substrate containing a color-changing film (color-changing filter substrate) has been disclosed in various techniques, and an organic EL display device can be obtained by bonding a color-changing filter substrate to an organic EL substrate. For example, when the color filter substrate is used in an organic EL display of a top emission structure, a structure in which an organic EL substrate (for example, a substrate including a TFT element) and a color filter substrate are bonded together are common. As the bonding method, a general vacuum drop method or the like by liquid crystal can be used. Here, at the time of bonding, a gap layer in which a gap between the organic EL substrate and the organic EL substrate is buried is formed on the color filter substrate. As the gap layer, a solid such as an adhesive is generally used, but a liquid or a gas can also be used. In the case where the gap layer is formed to precisely control the gap between the two substrates, 201106024, on the color filter or the color-changing film, or the spacers of these are known, for example, the following techniques have been proposed. Patent Document 5 discloses that an effective region composed of a plurality of colored resin regions facing the organic EL layer is provided on a transparent substrate positioned on the organic EL layer, and the intermediate layer EL layer and the transparent substrate are In the case of the above-mentioned black matrix, when the area of the top surface of the spacer is the area of the effective area S, the ratio R of A to S satisfies: 0.0 5 % each R $ 1 % Color filter. The reason for forming the spacer is as follows. That is, in the case where the two gaps are too wide, there is a problem that light enters the adjacent sub-pixel portion. On the other hand, when the gap is too narrow, there is a problem that mechanical contact with the light-emitting region occurs. Further, in particular, the amount of light which is emitted to the color-changing film by the organic EL using the color-changing method greatly affects the color-changing efficiency, so the spacer precisely controls the gap. [Patent Document 1] Japanese Patent Laid-Open Publication No. Hei 08- 2 No. Hei. No. Hei. No. Hei. [Patent Document 4] Japanese Patent Laid-Open No. 2000- 3 5 3 5 9 4 ί [Patent Document 5] Japanese Patent Laid-Open No. 2 0 0 4 - 3 1 1 3 0 5 f [Summary of the Invention] [Invention The problem to be solved is to form a black matrix between the surrounding light-emitting directions and the above-mentioned ones, and the above-mentioned strips have a crosstalk interference effect between the boards, which must be based on the newspapers, newspapers, newspapers, newspapers. In the case of the above-mentioned gap layer containing a solid such as an adhesive, the refractive index of the organic EL display can be increased, and as a result, excellent light extraction efficiency can be achieved. This is because the transparent electrode layer, and the color changing film and the color filter have a refractive index of about 1.5 to 2.0, but the refractive index of the nitrogen gas and the inactive liquid is 1 · 〇 〜1 · 3 degree, and the epoxy system The refractive index of the adhesive or the like is 1.5 or more. Further, when the gap layer contains a solid such as an adhesive, excellent mechanical strength of the organic EL display can be achieved. However, in general, a resin such as an adhesive has a higher viscosity than a liquid such as a liquid crystal. The expansion of the organic EL substrate and the color filter substrate is lacking. In particular, when the color-changing film is a color-changing filter substrate formed by an ink-jet method, a bank is formed on the color-changing filter substrate side in order to form a color-changing film with high precision. Therefore, when the two substrates are bonded together, the expansion of the gap layer (resin) in the line direction of the color filter is not hindered, but the resin in the direction perpendicular to the above direction must extend beyond the bank. Therefore, since the resin is not spread to the respective inner sides of the outer peripheral sealing material, even if it is a panel of 2 to 3 inches, there is a possibility that a part of the screen is not buried by the resin. Such adjustment of the expansion of the resin should be carried out in conjunction with the adjustment of the optical gap. As mentioned above, the technique of forming a spacer on or around the color filter or the color changing film is known. The spacer can be formed on the bank by photolithography using a photocurable or photothermal curing resin. -9- 201106024 Normally, the spacer display unit (pixel) is applied to a bank existing everywhere at a ratio of 10 to 20%. Therefore, especially when the size of the pixel becomes small, the width of the spacer relative to the bank is 10 0 to 1 5 μηι, and the width of the spacer becomes 1 Ο μηη, and the size of the bank and the spacer becomes very close to that of the spacer having the spacer on the bank. Prominent causes the positional shift. In such a case, the height of the spacer is uneven, so it is necessary to pay attention to the accuracy of aligning the high position of the mask. As a solution to the alignment of the position, there is a pixel in which the discoloration ink is not applied, and a buried portion formed of a transparent resin material or the same material as the bank is formed, and a spacer is formed thereon. Here, after bonding the two substrates, the light emitted from the sub-pixel of the sub-pixel adjacent to the organic EL substrate which is adjacent to the pair of sub-pixels of the color-changing filter substrate is prevented from entering the color-changing substrate. The color mixture produced by the above-mentioned sub-pixels is very important. However, in the prevention of the color mixture, when the ink of the color-changing film coated by the ink-jet method is prevented from leaking and the height of the bank is relatively large, it is difficult to color the bank such as black. Therefore, it is also considered to use the transparent material only in the above-mentioned embedding portion. However, the formation of the embedding portion in addition to the formation of the bank may result in an increase in the amount of work, resulting in substantial cost increase. In other words, production of an organic EL display having high color conversion efficiency, excellent mass productivity, and high stability is expected. The present invention has been made in view of the above circumstances, and an object thereof is to provide mass production of a large-screen display capable of achieving low cost, and in particular to provide a color-changing yam substrate having high color-changing efficiency. -10-201106024 [Means for Solving the Problem] The present invention relates to a color-changing filter substrate comprising: a substrate; and a plurality of color filters having different transmission wavelengths of at least a sub-pixel portion formed on the substrate a sheet, a bank made of a curable resin formed on the non-sub-pixel portion above the substrate, and a color filter formed by at least a part of a slit pattern by an inkjet method a region in the upper region that is partitioned between the banks for absorbing light from a light source and emitting a light dispersing film having a wavelength distribution different from the absorption wavelength, and forming a photo-etching method on at least a portion of the bank a color-changing filter substrate of the spacer; the bank forming the spacer; the color-changing filter substrate extending in the horizontal direction when viewed from a side cross-sectional view (the type η of the present invention) The color-changing filter substrate can be used as a component of a multi-color light-emitting organic EL device incorporated in a personal computer or the like. In such a color-changing filter substrate, the curable resin can be used. The light curable resin or the curable resin for photothermal heat can be formed on the black matrix formed on the substrate. Further, it is preferable that at least a part of the bank is colored, and the coloring is black. And the transmittance of the visible region is preferably 10% or less. Second, the present invention includes a color filter substrate (type 2), characterized by comprising: a substrate; at least a pair formed on the substrate a plurality of color light-emitting sheets having different transmission wavelengths in the pixel portion, a bank made of a curable resin formed on the non-sub-pixel portion above the substrate, and elongated by an inkjet method a slit pattern formed in an area above the at least one portion of the color filter and partitioned between the banks -11 - 201106024 for absorbing light of the light source and emitting light having a wavelength distribution different from the absorption wavelength The color-changing film is formed of a photocurable resin or a photocurable resin for curing between the banks of the both sides of the region where the color-changing film is not formed in the region. And a spacer formed by photolithography on the embedded member; the bank and the embedded member are simultaneously formed. The color filter substrate of the type 2 is also color-changing filter of the type 1 In the same manner, the sheet substrate can be used as a component of a multi-color light-emitting organic EL device incorporated in a personal computer or the like. The color-changing filter substrate is cured by the photocurable resin or the photo-curable resin. Preferably, the refractive index of light having a wavelength region of from 3 to 500 nm is at least greater than 1.5. Further, the embedded member preferably contains 1 Ομπα or more for the bank surface in a side cross-sectional view. [Effects of the Invention] The color-changing filter substrate of the present invention can achieve mass production of a large-screen display at a low cost by any of the above-described types 1 and 2. In particular, excellent color change efficiency can be achieved. [Embodiment] [Best form for implementing the invention] <Color changing filter substrate and method of forming the same Fig. 1A to Fig. 1C shows a view of an example of the color changing filter substrate of the present invention, Fig. 1A is a plan view, and Fig. 1B is a line IB-IB of Fig. 1A Section -12-201106024, Fig. 1C is a cross-sectional view of the IC-IC line of Fig. 1A. As shown in the figure, the color filter substrate 1 〇a is a black matrix 1 including a transparent substrate 12 and a portion (non-sub-pixel unit) other than the sub-pixel portion formed on the transparent substrate 12. 4. The red, green, and blue color filters 16R, 16G, and 16B are formed in stripes so as to cover the sub-picture portion, and cover the black matrix 14 and the color filter 16 (R). The method of G, B) is further formed by the lyophilic layer 18 formed thereon, the bank 20 of the non-sub-pixel portion formed on the lyophilic layer 18, and the non-sub-pixel portion and the region The optical spacer 22 on the bank 20 in the region where the color-changing film is not formed, the red and green conversion films 24R and 24G formed in the region partitioned by the lyophilic layer 18 and the bank 20, to cover the bank 20, The structure of the barrier layer 26 in which the photo spacer 22, the color-changing film 24 (R, G), and the portion of the lyophilic layer 18 that does not form the color-changing film are formed. (Transparent Substrate 1 2 ) As the transparent substrate 1 2, glass, polyimine, polycarbonate, polyethylene terephthalate, polyethylene naphthalate (PEN), poly pair can be used. Polymer materials such as butyl phthalate and polyphenyl hydrazine (PPSU). The transparent substrate 1 2 may be rigid or flexible. The transparent substrate 1 2 preferably has a transmittance of 80% or more for visible light. (Black matrix 14) The black matrix 14 is a component that is provided for the purpose of improving the alignment of the arrangement of the color filters 16 (R, G, -13-201106024 B) to be described later. The black matrix 14 forms a material of a light that does not transmit through the visible region as a slit pattern. As the material of the black matrix 14, a coloring agent for mixing blackening with a photosensitive resin such as an acrylic resin can be used. Further, a black matrix material used for a liquid crystal display device can also be applied. The black matrix 14 can be formed by applying a coating method such as a spin coating method to a transparent substrate 12, drying it by heating, and then patterning by photolithography. Further, the 'black matrix 14' can be effectively prevented from being surrounded by light from adjacent pixels by setting it as needed, that is, the light from the adjacent sub-pixels leaks into the sub-pixel corresponding to the side. Color filter layer. By this, you can achieve high contrast. Further, the formation of the black matrix 14 is also effective in reducing the step difference caused by the formation of each of the color filters 16 (R, G, B) which will be described later. (Color Filter 16 (R, G, B)) The color filter 16 (R, G, B) is a composition for improving the color purity of light having a certain wavelength by blocking a specific wavelength. Elements. The color filter 16 (R, G, B) can be formed on the transparent substrate 12 using a material for a flat panel display, for example, a pigment dispersion type material in which a pigment is dispersed in a resist. The color filter 16' is generally a red filter 16R that transmits light having a wavelength of 600 nm or more, a green filter 16G that transmits light of a wavelength of 500 to 600 tim, and a light having a wavelength of 400 to 550 nm. Blue-14- 201106024 Filter 16B construction. The method of forming the color filter 16 (R, G, B) can be carried out by a coating method, particularly preferably by using an optical process. (Lipophilic layer 18) The lyophilic layer 18 is used to improve the wettability of the color changing film 24 (R, G) when the color changing film 24 (R, G) is formed by an inkjet method as will be described later. The components that are used for use. The lyophilic layer 18 ' can be formed by a sputtering method or a chemical vapor deposition method (CVD method) depending on the polarity of the ink used as the color changing film 24 (R, G), or SiNx film. Further, when the lyophilic layer 18 is not formed, the wettability of the upper surface of the color filter 16 (R, G ' B ) and the bank 20 to be described later can be appropriately controlled by plasma treatment or the like. (bank 20) The bank 20 is a component that is disposed to prevent the occurrence of color mixture due to the inflow of the ink of the color-changing film 24 (R, G) described later into the adjacent sub-pixels. In the example shown in Figs. 1A to 1C, the coloring film 24 (R, G) is formed by an inkjet method. Therefore, in order to precisely pattern the color-changing film 24 (R, G), it is necessary to precisely apply a small amount of droplets. Therefore, for the ink used for the color-changing film 24 (R, G), the solid content ratio of the ink which is the cause of the adhesion is not excessively large. In other words, the volume of the droplets is inevitably increased for the necessary film thickness. Therefore, in order to prevent the sub-pixels mixed to the side, the pattern of each sub-pixel is formed with high precision, and the formation of the bank 20 is Effective. Further, as the pattern shape of the bank 20, there is a slit pattern which is divided by each sub-pixel (a region corresponding to a position where the color filter 16 (R, G, B) of each color is disposed), and a color filter. A slit pattern defined by each line of the light sheet 16 (R, G, B). In order to prevent the expansion of the sealing material and prevent the sub-pixels from being mixed, it is preferable to adopt a slit pattern shape. Here, in the example shown in FIG. 1A to FIG. 1C, the bank of the spacer 22 to be described later (the second bank from the right in FIG. 1C) is formed in a side cross-sectional view as compared with the other banks. A shape that protrudes horizontally. Thereby, the shape accuracy of the spacer 22 can be improved by forming a bank having a wide width and a wide width in the horizontal direction. The formation of the bank 20 can be performed by light and/or heat treatment of a photocurable or photothermally-curable resin, so that a radical species or an ion species is generated and polymerized or bridged to become insoluble and insoluble. Further, the photocurable or photothermographic type I-curable resin is preferably soluble in an organic solvent or an alkaline solution before being hardened for patterning. The color-changing filter shown in FIGS. 1A to 1C is used. The substrate 10a is a photocurable or photothermal curing resin which can be used as a material for the stomach bank 20. Specifically, the following may be mentioned. That is, (1) photoprocessing or heat treatment of a plurality of acrylic polyfunctional monomers and oligomers having an allyl group or a methallyl group, and a light or thermal polymerization initiator The composition film 'polymerizes to generate photoradicals or thermal radicals, (2) -16- 201106024 dimerizes the bridge by light or heat-treated polyethylene cinnamate and a sensitizer (3) a film composed of a chain or cyclic olefin and a diazide group by light or heat treatment to produce a nitrene, and an olefin bridge, and (4) by light or heat treatment A film of a composition composed of a monomer having an epoxy group and a photooxygen generator causes an acid (cation) to be generated to cause an aggregator or the like. In particular, the photocurable or photothermographic curable resin of the above (1) can be patterned with high precision, and is also preferable in terms of reliability such as solvent resistance and heat resistance. Others, polycarbonate (PC), polyethylene terephthalate (PET), polyether oxime, polyvinyl alcohol, polyphenylene ether, polyamine, polyether amide, norbornene can also be used. Resin, methacrylic resin, isobutylene hydrated maleic acid copolymerized resin, thermoplastic resin such as cyclic olefin, epoxy resin, phenol resin, urethane resin, acrylic resin, vinyl ester resin, yam a thermosetting resin such as an amine resin, an urethane resin, a urea resin or a melamine resin, or a trifunctional or tetrafunctional alkoxy group such as polystyrene, polypropylene or polycarbonate. A polymer mixture of decane and the like. The above-mentioned 'the type of the bank 2' of the color-changing filter substrate of the above-described type 1 is formed in a side cross-sectional view, and the portion of the bank extending in the horizontal direction can be formed as a member different from the bank 20, in particular As a result of extending the projecting portion to the adjacent bank, the projecting portion can be formed as an embedding member as the type of the above-described type 2. Regarding the forming material of the embedded member of the is-like method, and the forming method, each of the conditions of the section -17-201106024 is the same as the conditions of the bank 20, or in accordance with the conditions, in particular, the simultaneous formation of the bank 20 and the embedded member It is better from an economic point of view. Further, when used as an embedding member, it is preferable that the refractive index of the photocurable resin or the curable resin for photothermal enthalpy after the curing of the light having a wavelength region of from 3 to 500 nm is at least 1.5. In this manner, by using a material having a higher refractive index, the incidence efficiency of light from the organic electroluminescent element substrate to the color filter substrate is increased. Further, it is preferable that the embedded member has a flat portion of 10 μm or more and -1 to + 1 μm to the bank surface in the side cross-sectional view. In such a case, the shape accuracy of the spacer 22 can be improved in the case where the position of the pattern is shifted due to the formation of the light. Next, the aforementioned bank 20, as in the case shown in Figs. 2A to 2C, preferably has its outer peripheral portion colored. 2A to 2C are diagrams showing other examples of the color-changing filter substrate of the present invention, FIG. 2A is a plan view, FIG. 2B is a cross-sectional view taken along line IIB-IIB of FIG. 2A, and FIG. 2C is a view of FIG. Section IIC-11C line diagram. The materials and formation conditions of the respective constituent elements 12 to 26 of the color-changing filter substrate 10b shown in the drawings, and the color-changing filter substrate (l〇a) in the case of the uncolored one described above (Fig. The materials and conditions of 1A to 1C) are the same. In the example shown in Figs. 2A to 2C, in addition to the configuration of the example shown in Figs. 1A to 1C, the outer peripheral portions of the side and the upper side of the bank 20 are colored, whereby the bank coloring portion 20a is formed. This coloring reduces the transmittance of the visible region of the bank 20, and is formed by the purpose of suppressing the chromaticity caused by the leakage of other adjacent sub-pixels from -18 to 201106024. The coloring of such a bank colored portion 20a can be carried out by dispersing a pigment or a dye in a transparent bank material or by covering the colored film with the bank 20. It is preferable from the viewpoint of economy to reduce the number of manufacturing steps by dispersing the pigment or dye in the bank material. For example, in the coloring described above, it is preferable to reduce the transmittance of the visible region and to suppress the decrease in chromaticity. In particular, it is preferable to use black to make the transmittance of the visible region of the bank 2 10 10% or less. (Light spacer 22) In general, when a color-changing filter substrate is used for a top-emission type organic EL display, an organic EL substrate (for example, a TFT substrate) and a color-changing filter substrate are bonded to each other to form the display. In this case, when the gap between the organic EL substrate and the color-changing filter substrate is precisely controlled, a spacer may be provided on the color filter or the color-changing film or around the color filter. In the case where the gap is too large, the light will invade the adjacent sub-pixels and the crosstalk will occur. On the other hand, if the gap is too narrow, interference will occur or mechanical contact to the light-emitting area will occur. In particular, in the organic EL display of the color change type shown in Figs. 1A to 1C, the amount of light incident on the color changing film 24 (R, G) greatly affects the color change efficiency, so that the gap control by the spacer 22 becomes important. The shape of the spacer 22 may be a circular 'rectangular shape before and after the width of 1 Ομπι or conform to these shapes, so that it does not affect the direction in which the filling resin is orthogonal to the embankment -19-201106024 20 (Fig. 1B, Fig. 1C) The horizontal direction) is very important. Further, in order to cause the crosstalk of the sub-pixels that do not intrude into the light, it is necessary to make the gap formed by overlapping the cells of the bank 20 and the spacer 22 below 1 Ομηη, and the spacer 22 formed on the bank 20. The height is preferably at a level of 1 to 3 μη. Further, it is necessary to prevent the filling resin from spreading in a direction orthogonal to the bank 20, and to fit the panel surface of the display to ensure the same gap, preferably in the color filter 16 (R, G, Β) or discoloration. It is preferred that spacers are formed discretely on or around the film 24 (R, G). Specifically, the degree of forming one spacer 2 2 per 1 pixel (every 3 sub-pixels) is preferable. However, when the spacer 2 is applied to the bank 20 which is formed by the display unit (pixel unit) at a ratio of 10 to 20%, in particular, as the fineness of the pixel portion becomes higher, the bank is The width of 20's wide 1〇~Ι5μηι spacers 22 is around 10 μηι, and these sizes become very close. Therefore, when the displacement of the spacer 22 is caused to be unevenly displaced on the bank 20, the height of the spacer 22 may be uneven. Therefore, it is necessary to improve the positional alignment accuracy of the mask and the formation of the spacer 22, and it is possible to / or heat treatment of photocurable or photothermal sclerosing type curable resin, causing the generation of radical species or ion species to polymerize or bridge, so that it becomes insoluble and insoluble. Further, the photocurable or photothermographic type curable resin is preferably soluble in an organic solvent or an alkali solution before being hardened for patterning. In general, the spacer 22 is formed by spreading glass beads or the like. In the formation form of -20-201106024, the height of the color filter 16 (R, G, B) is different from that of the color filter 1 and the spacer 22 is inadvertently placed on the bank 20 or color filtered. Slice 16 (R, G, B). Therefore, when the color filters 16 (R, G, B) are lower than the banks 20, the heights of the spacers 22 disposed on the color filters 16 (R, G, B) are compared. small. In particular, in an organic EL display using a color-changing method, the amount of light incident on the color-changing film greatly affects the color-changing efficiency. Therefore, it is necessary to precisely control the gap according to the spacer, and it is necessary to keep the spacers 22 at the same height. That is, as the spacer 22, it is preferable to use a material which can be formed by photolithography. The color-changing filter substrate 10a shown in FIG. 1A to FIG. 1C can be used as a material for the optical spacer 22 as a photocurable or photo-curable resin. Specifically, the following may be mentioned. . That is, (1) photoprocessing or heat treatment of a plurality of acrylic polyfunctional monomers and oligomers having an allyl group or a methallyl group, and a light or thermal polymerization initiator a composition film that causes photoradicals or thermal radicals to polymerize, (2) a dimerization of a composition composed of light or heat-treated polyethylene cinnamate and a sensitizer to bridge the bridge, (3) a film of a composition consisting of a chain or cyclic olefin and a diazide group by light or heat treatment to produce a nitrene, and an olefin bridge, and (4) having an epoxy group by light or heat treatment The film of the composition composed of the monomer and the photo-oxygen generator causes an acid (cation) to be generated to cause an aggregator or the like. In particular, the photocurable or photothermographic curable resin of the above (1) can be patterned with high precision, and is also preferable in terms of solvent resistance, heat resistance, and the like. Others, polycarbonate (PC), polyethylene terephthalate (PET), polyether oxime, polyvinyl alcohol, polyphenylene ether, polyamine, polyether amide, norbornene can also be used. Resin, methacrylic resin, isobutylene hydrated maleic acid copolymerized resin, thermoplastic 楱f grease such as cyclic olefin, epoxy resin, phenol resin, urethane resin, acrylic resin, vinyl ester resin, a thermosetting resin such as a quinone imine resin, an urethane resin, a urea resin or a melamine resin, or a trifunctional or 4-functional oxy group such as polystyrene, polypropylene or polycarbonate. a polymer mixture of decane, and the like. Further, the spacer 22 may be made of the same material as the bank 20 or may be made of a different material as long as it does not cause film buckling and/or film peeling by the bank 20 when the material is applied. (Color-changing film 24 (R, G)) The color-changing film 24 (R, G) is a component that functions to absorb light from a light source and emit fluorescence of a different wavelength distribution. Examples of the material which can be applied to the color-changing film 24 (R, G) include a fluorescent dye such as a chelating dye such as Alq3 (tris(8-hydroxyquinoline) aluminum complex)' 3- (2- Benzothiazolyl) -7- ( diethylamino) coumarin (coumarin 6), 3-(2-Benzimidazolyl) -7-(diethylamino) coumarin (coumarin 7), coumarin 135 and other coumarin pigments, solvent yellow 43. Naphthalimide, such as Solvent Yellow 44, a low molecular weight organic pigmentescent pigment such as a pigment-22-201106024 'Polymer represented by polyphenylene, polyamine, and polyfluorene Fluorescent material. Further, these pigments may be mixed and used as necessary. Such a means of mixing is an effective means for converting a wide range of wavelength shifts from blue to red. In the formation of the color-changing filter substrate shown in Figs. 1A to 1C, the color-changing film 24 (R, G) is formed by an ink-jet method. Therefore, it is necessary to prepare these fluorescent materials into inks during patterning, specifically, to dissolve the aforementioned fluorescent materials into a solvent. As the solvent, those which can dissolve the fluorescent material can be appropriately selected from those suitable for use in the fluorescent material. For example, a nonpolar organic solvent such as toluene, a polar organic solvent such as chloroform, an alcohol or a ketone can be used. When adjusting the viscosity, vapor pressure, and/or solubility of the ink, it is preferred to use a mixture of a plurality of solvents. (Baffle Layer 26) When the color-changing film 24 (R, G) patterned as described above is a substance which is deteriorated by the presence of water and/or oxygen, the water-repellent layer 24 is prevented from being changed to the color-changing layer 24 (R, G) immersed in the components for performance stabilization. As the material of the barrier layer 26, it is possible to use a barrier property to a gas and/or an organic solvent, and the transparency of the visible region is high (the transmittance in the range of 400 to 700 nm is 50% or more). . For example, an inorganic oxide such as S i Ο x , SiNx, SiNxOy, yttrium, TiOx, TaOx or ZnOx, an inorganic nitride or the like can be used. -23- 201106024 As a method of forming the barrier layer 26, a sputtering method, a CVD method, a vacuum evaporation method, or the like can be used, and damage to the color-changing film 24 (R, G) should be avoided, and the use can be performed at 1 〇〇 ° C. The following CVD method is carried out at a low temperature, and the energy of the particles is relatively weak. <Organic EL display and its manufacturing method> Next, an organic EL display using the color-changing filter substrates 10a and 10b (any of which is not colored when the bank 20 is colored) . The organic EL display is formed by laminating a color-changing filter substrate and an organic EL substrate. [Color-changing filter substrate and method of manufacturing the same] The color-changing filter substrate and the method of manufacturing the same are as described above, for example, the substrates shown in FIGS. 1A to 1C and 2A to 2C are subjected to the aforementioned conditions. And formed. [Organic EL substrate and its manufacturing method] As shown in FIG. 3, the organic EL substrate 30 is formed on the substrate 32, and the switching element 34, the planarization layer 36, the reflective electrode 38, the insulating layer 40, and the organic EL film are sequentially formed. 42. A laminate of a transparent electrode 44 and an inorganic barrier layer 46. Hereinafter, each of the constituent elements 32 to 46 of the organic EL substrate 30 will be described in this order of lamination (in order from the lower side of Fig. 3). -24- 201106024 (Substrate 3 2 ) The organic EL display is attached to the color-changing filter substrate 1 〇a ' l〇b and the organic EL substrate, and the light is removed from the color-changing filter 10a, 1〇b side. s installation. Therefore, the substrate 3 2 of the organic EL substrate is not necessarily transparent. For example, a metal material such as aluminum, an amorphous substrate such as glass or quartz, or a transparent or translucent material such as a resin can be used. Alternatively, an opaque material such as a crystalline substrate such as Si or GaAs may be used. Further, in addition to glass or the like, a ceramic such as alumina or a metal sheet such as stainless steel may be used as a material for insulating treatment such as surface oxidation, a thermosetting resin such as phenol resin, or a thermoplastic resin such as polycarbonate. 3 4) On the substrate 3 2, a plurality of switching elements and wirings for external connection to the external driving circuit and external connection terminal portions are formed. The switching element 34 may be, for example, a thin film transistor element (TFT element), which is a bottom gate type in which a gate electrode is provided under a gate insulating film, and an active layer may be a structure using a polysilicon film. Specifically, the TFT element of the prior polysilicon can be used. Further, the TFT element is formed on the end portion of each pixel and is a reflection electrode 38 which will be described later, and is formed so as to be connectable through a wiring electrode (not shown). The formation method can also be carried out by any of the conventional methods. The size of the TFT element is preferably from 10 to 30 μm. That is, the size of the pixel is usually 20 μηιχ20 μΓη to 300 μΓηχ300 μιη ° ° -25- 201106024 (flattening layer 3 6 ) The planarization layer 3 6 is an optional component formed to cover the switching element 34. The planarization layer 326 can be formed by any method using any resin known in the art. (Passive layer) Although not shown in Fig. 3, a passivation layer may be arbitrarily selected on the planarization layer 36 in order to prevent diffusion of gas generated by the resin forming the planarization layer 36. The passivation layer may be a single layer or a laminate composed of a plurality of layers. The passivation layer can be formed of an inorganic oxide (such as SiO 2 or the like), an inorganic nitride (SiN or the like), and an inorganic oxynitride (SiON or the like). The passivation layer can be formed by a sputtering method, a CVD method, or the like. Further, it is important to provide a plurality of contact holes for connecting the switching element 34 and the reflective electrode 38 to be described later to the planarization layer 36 and the passivation layer. For the formation of the contact holes, a method such as dry etching can be used. (lower bottom layer)

於圖3雖未圖示,但亦可配設供保證開關元件34與 反射電極38的密接性之下底層。下底層,可以使用IZO 、:ITO等導電性氧化物,藉由濺鍍法等來形成。下底層, 可以使用濕式蝕刻等方法,對構成反射電極3 8的複數之 部分電極分割爲1對1對應的複數部分而形成。 -26- 201106024 (反射電極3 8 ) 反射電極38,可以使用高反射率的金屬(Al、Ag、 Mo、W、Ni、Cr等)或者包含這些的合金,非晶質合金 (NiP、NiB、CrP、CrB等),或者是微結晶性合金( NiAl等)來形成。 反射電極3 8,可以由與複數之開關元件3 4爲1對1 對應的複數之部分電極來構成,分別之部分電極區劃出發 光部。 於圖3所示之例,構成反射電極3 8的分別的發光部 係作爲長方形的區域而被構成的。反射電極3 8,可以在 藉由平坦化層3 6與鈍化層所區劃的區域,藉由使用遮罩 的乾式製程(蒸鍍法,或濺鍍法等),來部分地形成。此 外,反射電極3 8,在平坦化層3 6的全面堆積前述材料後 藉由濕式蝕刻等方法分割爲複數之部分而形成亦可。 (間隙層) 在反射電極38與後述之有機EL層42之間,任意選 擇性地形成在圖3未圖示的間隙層亦可。間隙層,與下底 層同樣,可以使用IZ 0、IΤ Ο等導電性氧化物,藉由濺鍍 法等來形成。 間隙層,可以使用濕式蝕刻等方法,對構成反射電極 3 8的複數之部分電極分割爲1對1對應的複數部分而形 成。形成下底層與間隙層雙方的場合,以使用相同材料形 成這些層爲較佳。此外’在此場合,同時處理下底層及間 -27- 201106024 隙層而往複數的部分進行分割是比較簡便的所以更佳。 (絕緣層40 ) 爲了防止構成反射電極38的複數部分電極間之短路 ,於反射電極3 8間設置絕緣層40亦可。絕緣層40,如 圖3所示,在相當於發光部的位置以區畫出開口部的方式 形成。 絕緣層40覆蓋住反射電極38的一部份的場合,以在 反射電極3 8之未被絕緣層覆蓋的區域(由反射電極3 8往 有機EL層42進行載子注入的區域,亦即,發光部)成 爲長方形的方式來形成爲較佳。 絕緣層40,可以使用樹脂、無機氧化物(Si02等) 、無機氮化物(SiN等)、無機氧氮化物(SiON等)之 絕緣性材料來形成。絕緣層4 0的圖案化,可以使用於光 蝕刻法等之該項技術已知的任意的方法來進行。 (陰極緩衝層) 把反射電極38作爲陰極(電子注入電極)使用的場 合,亦可任意選擇地,在反射電極3 8或間隙層,與後述 之有機EL層42之間,配設供提高電子注入效率之用的 陰極緩衝層。作爲陰極緩衝層的材料,可以使用Li、Na 、K、Cs等鹼金屬、Ba、Sr等之鹼土金屬、或者包含這 些的合金、稀土類金屬、或者這些金屬的氟化物等。然而 ’並不限定於前述之材料。陰極緩衝層的膜厚,可以考慮 -28- 201106024 驅動電壓等而適宜選定,通常,以1 〇nm以下較佳。 (有機EL膜42 ) 有機EL膜42,係層積正孔注入層、正孔輸送層、有 機發光層、電子輸送層、及電子注入層等之複數之層而成 ,可以使用於基板全面開口了畫素區域的蒸鍍遮罩,藉由 真空蒸鍍法依序形成各層。以下,顯示例示之有機EL膜 42的構成,同時也顯示配置於其兩側的陽極(反射電極 38 )以及陰極(透明電極44 )。 (1)陽極/有機發光層/陰極 (2 )陽極/正孔注入層/有機發光層/陰極 (3 )陽極/有機發光層/電子注入層/陰極 (4 )陽極/正孔注入層/有機發光層/電子注入層/陰極 (5 )陽極/正孔注入層/正孔輸送層/有機發光層/電子注入 層/陰極 有機EL膜42之各層的材料,並沒有特別限定,可 以使用習知之任何材料。 於正孔注入層’可以使用鈦菁(phthalocyanine)(Although not shown in Fig. 3, an underlayer for ensuring adhesion between the switching element 34 and the reflective electrode 38 may be disposed. The lower underlayer can be formed by a sputtering method or the like using a conductive oxide such as IZO or ITO. The lower underlayer may be formed by dividing a plurality of electrodes constituting the reflective electrode 38 into a plurality of portions corresponding to one-to-one by a method such as wet etching. -26- 201106024 (Reflective electrode 3 8 ) For the reflective electrode 38, a metal having high reflectance (Al, Ag, Mo, W, Ni, Cr, etc.) or an alloy containing the same, an amorphous alloy (NiP, NiB, CrP, CrB, etc.) or a microcrystalline alloy (NiAl or the like) is formed. The reflective electrode 38 can be constituted by a plurality of partial electrodes corresponding to a plurality of switching elements 34, which are one-to-one, and each of the partial electrodes partitions the light-emitting portion. In the example shown in Fig. 3, the respective light-emitting portions constituting the reflective electrode 38 are formed as rectangular regions. The reflective electrode 38 can be partially formed by a dry process using a mask (evaporation method, sputtering method, or the like) in a region partitioned by the planarization layer 36 and the passivation layer. Further, the reflective electrode 38 may be formed by depositing the above-described material in the entire surface of the planarization layer 36, and then dividing it into a plurality of portions by a method such as wet etching. (Gap layer) The gap electrode layer (not shown) may be arbitrarily formed between the reflective electrode 38 and an organic EL layer 42 to be described later. The gap layer can be formed by a sputtering method or the like using a conductive oxide such as IZ 0 or I Τ 同样 as in the case of the lower underlayer. The gap layer can be formed by dividing a plurality of partial electrodes constituting the reflective electrode 38 into a plurality of one-to-one corresponding portions by a method such as wet etching. In the case where both the lower underlayer and the gap layer are formed, it is preferred to form the layers using the same material. Further, in this case, it is relatively simple to perform the division of the lower layer and the intermediate layer and the portion of the reciprocating number at the same time. (Insulating Layer 40) In order to prevent short-circuiting between the plurality of partial electrodes constituting the reflective electrode 38, the insulating layer 40 may be provided between the reflective electrodes 38. As shown in Fig. 3, the insulating layer 40 is formed so as to draw an opening in a region corresponding to the light-emitting portion. When the insulating layer 40 covers a portion of the reflective electrode 38, in a region where the reflective electrode 38 is not covered by the insulating layer (the region where the carrier electrode is injected from the reflective electrode 38 to the organic EL layer 42, that is, It is preferable that the light-emitting portion is formed in a rectangular shape. The insulating layer 40 can be formed using an insulating material such as a resin, an inorganic oxide (such as SiO 2 ), an inorganic nitride (SiN or the like), or an inorganic oxynitride (such as SiON). The patterning of the insulating layer 40 can be carried out by any method known in the art such as photolithography. (Cathode Buffer Layer) When the reflective electrode 38 is used as a cathode (electron injection electrode), it is also possible to arbitrarily select between the reflective electrode 38 or the gap layer and the organic EL layer 42 to be described later. A cathode buffer layer for injection efficiency. As the material of the cathode buffer layer, an alkali metal such as Li, Na, K or Cs, an alkaline earth metal such as Ba or Sr, or an alloy containing these, a rare earth metal, or a fluoride of these metals can be used. However, ' is not limited to the aforementioned materials. The film thickness of the cathode buffer layer can be appropriately selected in consideration of the driving voltage of -28 to 201106024, and is usually preferably 1 〇 nm or less. (Organic EL film 42) The organic EL film 42 is formed by laminating a plurality of layers of a positive hole injection layer, a positive hole transport layer, an organic light-emitting layer, an electron transport layer, and an electron injection layer, and can be used for a full opening of the substrate. The vapor deposition mask of the pixel region was sequentially formed by vacuum evaporation. Hereinafter, the configuration of the illustrated organic EL film 42 is shown, and the anode (reflecting electrode 38) and the cathode (transparent electrode 44) disposed on both sides thereof are also displayed. (1) anode/organic light-emitting layer/cathode (2) anode/positive hole injection layer/organic light-emitting layer/cathode (3) anode/organic light-emitting layer/electron injection layer/cathode (4) anode/positive hole injection layer/organic The material of each layer of the light-emitting layer/electron injection layer/cathode (5) anode/positive hole injection layer/normal hole transport layer/organic light-emitting layer/electron injection layer/cathode organic EL film 42 is not particularly limited, and conventionally used Any material. For the positive hole injection layer, phthalocyanine can be used (

Pc)類(包含銅鈦菁(CuPc)等)或者陰丹士林( indanthrene) 系化合物等。 於正孔輸送層’可以使用三芳香胺(trUrylamine ) 部分構造、咔唑(carbazole )部分構造、或者噁二唑( 〇XadiaZ〇le)部分構造之各材料(例如,TPD、α-NPD、 PBD m MTDATA等)。此外,也可以使用於這些之中摻 -29- 201106024 雜F4-TCNQ等路易士酸化合物之材料。 於有機發光層,可以因應所要的色調而適當選擇材料 〇 爲了得到藍色至藍綠色的發光,可以使用苯並噻唑( benzothiazole)系、苯並咪哩(Benzimidazole)系、苯並 惡唑(benzoxazole)等螢光增白劑,金屬螯合化氧正離 子(oxonium)化合物、乙嫌苯撑(styryl benzene)系化 合物、芳香族二亞甲基系化合物等。 具體而言,於宿主材料添加摻雜物,可以形成有機發 光層。 作爲宿主材料,可以使用鋁螯合物,^#’-!^“]^-dipheny 1 viny 1 ' 2,5-bis ( 5-tert-buty 1-2 ) -Benzoxazol- thiophene ( BBOT)、聯苯(DPVBi) » 作爲藍色摻雜物,可以添加o.l〜5%之茈(perylene )、2,5,8,ll-tetra ( t-butyl) -perylene ( TI3P) ' 4,4'-b i s [ 2 - ( 4- ( N , N - d i p h e n y 1 am i η o ) phenyl ) vinyl]biphenyl (DPAVBi )等。 作爲紅色摻雜物,可以添加 0.1〜5%之 4-( D i c y a η 〇 m e t h y 1 e n e ) -2-methyl-6- ( p-dimethylaminostyryl )-4H-pyran 4,4 - d i f 1 u o r o -1,3,5,7 -1 e t r ap h e n y 1 - 4 - b o r a- 3a,4a,-diaza-s-indacene (機械翻譯自日本特許廳_網站)、 propanedinitolyl ( DCJT 1 )(機械翻譯自日本特許廳網 站)、尼羅紅等。 作爲電子輸送層,可以使用Alq3 (三(8-羥基喹啉) -30- 201106024 鋁錯體),亦可於此摻雜鋰等之鹼金屬者。 作爲電子注入層,可以使用Alq3之類的鋁錯體、摻 雜鹼金屬或鹼土類金屬的鋁錯體、或者添加鹼金屬或鹼土 類金屬的二苯基二氮雜菲(Bathophenanthroline )等。 進而,也可使用氟化鋰。 (損傷緩和層) 有機EL層42與後述之透明電極44之間,任意選擇 性地配設損傷緩和層亦可。損傷緩和層,係在藉由濺鍍法 形成透明電極44時,防止或者是緩和有機EL層42受到 損傷之構成要素。損傷緩和層可以使用MgAg或Au等透 過率高的金屬藉由蒸鍍法形成。此外,爲了保證透明性, 損傷緩和層,最好是數nm〜1 Onm程度之膜厚。 (透明電極44 ) 形成於有機EL膜42上的透明電極44,例如可以藉 由蒸鍍法、濺鍍法等形成緩衝層,於其上進而形成透明電 極材料之金屬氧化物而形成之。透明電極44,被均一地 形成於顯示部全面,作爲共通電極發揮功能。 作爲緩衝層,可以使用鋰、鈉、或者鉀等鹼金屬、鈣 、鎂或者緦等鹼土類金屬,或者由這些的氟化物等所構成 的電子注入性金屬,與其他金屬的合金,或者化合物。 爲了提高電子注入性,最好使用如前述之工作函數很 小的材料。緩衝層的膜厚,可以考慮驅動電壓及透明性等 -31 - 201106024 而適宜選定,但特別以在1 0nm以下較佳》 作爲金屬氧化物,可以舉出ITO、氧化錫、氧化銦、 IZO、氧化鋅、鋅鋁氧化物、鋅鎵氧化物,或者對這些氧 化物添加F、Sb等摻雜物之導電性透明金屬氧化物。該氧 化物’可以使用濺鍍法或CVD法來形成,但以使用濺鍍 法形成較佳。 (無機障壁層46) 爲了防止有機EL層42之由於氧氣或水分導致失去 活性,如圖3所示,以覆蓋形成於基板32上的各構成要 素34〜44的方式,任意選擇性地配設無機障壁層46亦可 〇 無機障壁層46,可以是單一層,亦可係由複數之層 所構成的層積體。無機障壁層46,可以由無機氧化物( Si〇2等之SiOx)、無機氮化物(SiN等之SiNx)、及無 機氧氮化物(SiON等之SiOxNy )等來形成。無機障壁層 46,可以使用濺鍍法、CVD法等來形成。 如以上所述地進行,使用複數之開關元件34,可以 得到使用由複數之部分電極所構成的反射電極38與作爲 共通電極之一體型透明電極44的主動矩陣驅動型之有機 EL基板。此有機EL基板,如後述般,係與圖1A〜圖1 C 及圖2A〜圖2C所示的變色濾光片基板10a,10b貼合而 形成有機EL顯示器之構成要件。 對此,於本發明,替代如前所述的主動矩陣驅動型之 -32- 201106024 有機EL基板,不使用複數之開關元件,而使用延伸於第 1方向的複數條紋狀部分電極所構成的反射電極,及延伸 於第2方向之複數之條紋形狀部分電極所構成的透明電極 而構成的所謂被動矩陣驅動型之有機EL基板,作爲有機 EL顯示器的構成要素亦可。又,前述之第1方向係與第 2方向交叉的方向,較佳者爲直交的方向。 [變色濾光片基板與有機EL基板之貼合及有機EL顯示器] 如前述般形成的,使變色濾光片基板1 〇a或1 〇b,與 主動矩陣驅動型或被動矩陣驅動型有機EL基板,以障壁 層26(圖1A〜圖1C或圖2A〜圖2C)與無機障壁層46 (圖3)對向的方式重合。具體而言,在乾燥氮氣氛圍( 氧氣及水分濃度都在!〇PPm以下)之手套箱內’導入這 兩個基板。接著’使由紫外線硬化型樹脂所構成的未圖示 的密封材配至於這些基板之各端部間,得到有機EL顯示 器。 如以上所述進行而形成的有機EL顯示器,係把發揮 優異的變色效率之變色濾光片基板,適用於大畫面顯示器 者。此外,根據前述形成方法,可以進行低成本之量產。 [實施例1] 以下,在實施例1,實證堤往水平方向伸出之根據前 述型式1的變色濾光片基板之效果。 -33- 201106024 &lt;有機EL顯示器之形成&gt; [本發明例1 ] (變色濾光片基板之形成) 本發明例1之變色濾光片基板,爲圖1A〜圖1C所示 的形式之基板1 〇 a ^ 《對基板12之黑矩陣14的形成》 於玻璃(Eagle2000 :康寧公司製造)上,以光蝕刻 法形成黑矩陣(CK-7001:富士軟片公司製造)。副畫素 間的間隙爲縱方向30μιη、橫方向1〇μιη。開口的尺寸爲 3 00μιηχ 1 ΟΟμιη ·每 1 畫素間距爲 330μηι。 《彩色濾光片16(R、G、Β)的形成》 於形成黑矩陣的玻璃上,使用紅色濾光片(CR-700 1 :富士軟片公司製造)、綠色濾光片(CG-7001:富士軟 片公司製造)、藍色濾光片(CB-7 00 1:富士軟片公司製 造)’以光蝕刻法形成彩色濾光片。各層的膜厚分別爲 Ιμπι。形成的彩色濾光片的寬幅尺寸爲ι〇6μηι,各色之彩 色媳光片係形成爲條紋圖案。 《親液層18的形成》 以電漿CVD裝置,使用作爲原料氣體之單矽烷( SiH4 )、氨(ΝΗ3 )以及氮氣(Ν2 ),以電漿CVD法,形 成膜厚300μιη的氮化矽(SiN)。 -34- 201106024 《堤20的形成》 使用丙烯酸系樹脂VP A 100 (新日鐵化學製造),以 光蝕刻法於彩色濾光片的條紋圖案的兩側形成堤。堤的寬 巾虽爲ΙΟμιη'由彩色爐光片表面起算的局度爲5μΐΏ。此時 ,於藍色濾光片線下部之3 0 μιη寬幅的黑矩陣線上,側面 剖視,同時形成縱2 5 μ m X橫2 0 μ m之伸出部。 《間隔件2 2的形成》 使用丙烯酸系樹脂VP A 100 (新日鐵化學公司製造) ,以光蝕刻法以在1個畫素配設1個的方式,以3 3 0μιη 的間隔,形成平面俯視爲Φ 7 μ m之點狀圖案之間隔件。間 隔件的闻度’以由堤表面起成爲1.5μηι的方式調整旋轉塗 佈機的旋轉數,在藍色彩色濾光片線上部之3 Ομ„ι寬幅的 黑矩陣線上形成的堤伸出部之上形成間隔件。 《表面處理》 變色膜之形成前,先流以2000SCCM之Ν2氣體進行 施加電力爲〇.5kW,120秒鐘之電漿處理。其後接著於1 小時內進行後述之變色膜的形成。 《變色膜24 (R、G)的形成》 綠色變換膜,係進行如以下所述而形成。亦即,調整 甲苯1 000重量部,第1色素··香豆素6 +第2色素· DEQ50重量部(莫耳比爲香豆素6: DEQ = 48: 2)之油墨 -35- 201106024 ,使用噴墨裝置(Litrex製造之Litrexl20L),在氮氣氛 圍中製作膜厚50〇nm的綠色變換膜。油墨的乾燥,係不 破壞氮氣氛圍地使用真空乾燥爐,在真空度1.0 M 0_3Pa溫 度100°C下進行的。 紅色變換膜,係進行如以下所述而形成。亦即,調整 甲苯1 000重量部,第1色素:香豆素6 +第2色素: DCM50重量部(莫耳比爲香豆素6: DCM = 48 : 2 )之油墨 ,使用噴墨裝置.(Litrex製造之Litrexl20L),在氮氣氛 圍中製作膜厚500nm的紅色變換膜。油墨的乾燥,係不 破壞氮氣氛圍地使用真空乾燥爐,在真空度1.0 XI (Γ3 Pa溫 度l〇〇°C下進行的。 《障壁層26的形成》 不破壞真空,使用電漿CVD裝置,使用作爲原料氣 體之單矽烷(SiH4)、氨(NH3)以及氮氣(N2),以電 漿CVD法,堆積膜厚Ιμπι的氮化矽(SiN )而形成障壁 層。此處,堆積SiN時基板溫度在10(TC以下。 如以上所述地進行,得到本發明例1之變色濾光片基 板 1 0 a。 (有機EL元件基板之形成) 本發明例1之有機EL元件基板,爲圖3所示的型式 之基板3 0。 -36- 201106024 《對基板3 2之TFT元件3 4、配線、外部接續端子、平坦 化層3 6、及鈍化層之形成》 200x200mmx厚度〇.7mm之無鹼玻璃板上之相當於6 個獨立的副畫素的位置’形成TF τ元件(開關元件)、 配線及外部接續端子部分,以覆蓋這些的方式形成具有 2μιη的膜厚的平坦化層、及3 00nm膜厚的SiNx鈍化層。 此處,於平坦化層及鈍化層,形成供連接TFT元件與反 射電極之用的接觸孔。 《下底層,及反射電極3 8的形成》 其次,使用RF平面磁控管濺鍍裝置,在氬氣氛圍中 ,形成膜厚l〇〇nm的IZO膜(下底層)。 接著,以濺鍍法,形成膜厚l〇〇nm的鋁層。進而, 使用藉由光阻劑「OFRP-800」(東京應化工業(股)製 造)形成的遮罩,濕式蝕刻鋁層,形成由複數之部分構成 的反射電極。反射電極之複數部分之各個,中介著IZO膜 同時透過被設於平坦化層及鈍化層的複數接觸孔,1對1 地連接於開關元件之TFT元件。反射電極的複數部分之 分別的尺寸,爲縱方向280μιη及橫方向90μηι。 《間隙層的形成》 以濺鍍法,以覆蓋反射電極的方式,形成膜厚50nm 的IZO膜(間隙層)。接著,統括2個IZO膜藉由進行 濕式蝕刻,形成反射電極下的下底層及反射電極上之間隙Pc) (including copper phthalocyanine (CuPc) or the like) or an indanthrene compound or the like. The perforated transport layer can be made of a tri-amylamine (trUrylamine) partial structure, a carbazole partial structure, or a oxadiazole (〇XadiaZ〇le) partially constructed material (for example, TPD, α-NPD, PBD). m MTDATA, etc.). Further, it is also possible to use a material of a Lewis acid compound such as -29-201106024 hetero-F4-TCNQ. In the organic light-emitting layer, the material can be appropriately selected depending on the desired color tone. To obtain blue to blue-green light emission, a benzothiazole system, a Benzimidazole system, or a benzoxazole can be used. A fluorescent whitening agent, a metal chelated oxonium compound, a styryl benzene compound, an aromatic dimethylene compound, or the like. Specifically, an organic light-emitting layer can be formed by adding a dopant to the host material. As a host material, an aluminum chelate compound can be used, ^#'-!^"]^-dipheny 1 viny 1 ' 2,5-bis ( 5-tert-buty 1-2 ) -Benzoxazol- thiophene ( BBOT), Benzene (DPVBi) » As a blue dopant, you can add ol~5% perylene, 2,5,8,ll-tetra(t-butyl)-perylene (TI3P) ' 4,4'-bis [ 2 - ( 4- ( N , N - dipheny 1 am i η o ) phenyl ) vinyl]biphenyl (DPAVBi ), etc. As a red dopant, 0.1 to 5% of 4-( D icya η 〇methy 1 may be added Ene ) -2-methyl-6- ( p-dimethylaminostyryl )-4H-pyran 4,4 - dif 1 uoro -1,3,5,7 -1 etr ap heny 1 - 4 - bor a- 3a,4a,- Diaza-s-indacene (mechanical translation from the Japan Patent Office_website), propanedinitolyl (DCJT 1) (mechanical translation from the Japan Patent Office website), Nile Red, etc. As the electron transport layer, Alq3 (tris(8-hydroxyl) can be used) Quinoline) -30- 201106024 Aluminum complex), which may be doped with an alkali metal such as lithium. As the electron injecting layer, an aluminum complex such as Alq3 or an aluminum doped with an alkali metal or an alkaline earth metal may be used. Wrong body, or Addition of an alkali metal or an alkaline earth metal, such as a bathophenanthroline, etc. Further, lithium fluoride may be used. (damage relaxation layer) Between the organic EL layer 42 and a transparent electrode 44 to be described later, any selectivity In addition, when the transparent electrode 44 is formed by a sputtering method, the damage mitigation layer prevents or mitigates the damage of the organic EL layer 42. The damage mitigation layer can be permeable to MgAg or Au. In addition, in order to ensure transparency, the damage relaxation layer is preferably a film thickness of several nm to 1 Onm (transparent electrode 44) a transparent electrode formed on the organic EL film 42. For example, a buffer layer may be formed by a vapor deposition method, a sputtering method, or the like, and a metal oxide of a transparent electrode material may be formed thereon. The transparent electrode 44 is uniformly formed on the display portion as a common electrode. As a buffer layer, an alkali metal such as lithium, sodium, or potassium, an alkaline earth metal such as calcium, magnesium, or barium, or an electron injection composed of such a fluoride or the like can be used. Metal, an alloy with another metal, or a compound. In order to improve electron injectability, it is preferable to use a material having a small work function as described above. The film thickness of the buffer layer can be appropriately selected in consideration of -31 - 201106024, such as driving voltage and transparency. However, in particular, it is preferably 10 nm or less, and examples of the metal oxide include ITO, tin oxide, indium oxide, and IZO. Zinc oxide, zinc aluminum oxide, zinc gallium oxide, or a conductive transparent metal oxide in which a dopant such as F or Sb is added to these oxides. The oxide ' can be formed by a sputtering method or a CVD method, but it is preferably formed by sputtering. (Inorganic barrier layer 46) In order to prevent the organic EL layer 42 from being deactivated by oxygen or moisture, as shown in FIG. 3, the components 34 to 44 formed on the substrate 32 are covered so as to be selectively disposed. The inorganic barrier layer 46 may also be an inorganic barrier layer 46, and may be a single layer or a laminate composed of a plurality of layers. The inorganic barrier layer 46 may be formed of an inorganic oxide (SiOx such as Si〇2), an inorganic nitride (SiNx such as SiN), and an inorganic oxynitride (SiOxNy such as SiON). The inorganic barrier layer 46 can be formed by a sputtering method, a CVD method, or the like. As described above, by using the plurality of switching elements 34, an active matrix driving type organic EL substrate using the reflective electrode 38 composed of a plurality of partial electrodes and the bulk transparent electrode 44 as a common electrode can be obtained. The organic EL substrate is bonded to the color-changing filter substrates 10a and 10b shown in Figs. 1A to 1C and Figs. 2A to 2C to form a constituent element of the organic EL display. In contrast, in the present invention, instead of the active matrix driving type-32-201106024 organic EL substrate as described above, the reflection of the plurality of stripe-shaped partial electrodes extending in the first direction is used without using a plurality of switching elements. A so-called passive matrix drive type organic EL substrate comprising an electrode and a transparent electrode formed by a plurality of stripe-shaped partial electrodes extending in the second direction may be a constituent element of the organic EL display. Further, the direction in which the first direction intersects with the second direction is preferably an orthogonal direction. [Coating of Color-Change Filter Substrate and Organic EL Substrate and Organic EL Display] The color-changing filter substrate 1 〇a or 1 〇b is formed as described above, and active matrix drive type or passive matrix drive type organic EL The substrate is superposed on each other in such a manner that the barrier layer 26 (FIGS. 1A to 1C or 2A to 2C) opposes the inorganic barrier layer 46 (FIG. 3). Specifically, the two substrates were introduced into a glove box in a dry nitrogen atmosphere (both oxygen and water concentrations were below 〇PPm). Then, a sealing material (not shown) made of an ultraviolet curable resin was placed between the respective end portions of the substrates to obtain an organic EL display. The organic EL display formed as described above is suitable for a large-screen display device in which a color-changing filter substrate exhibiting excellent color-changing efficiency is used. Further, according to the above-described forming method, mass production at a low cost can be performed. [Embodiment 1] Hereinafter, in the first embodiment, the effect of the color filter substrate according to the above-described pattern 1 which protrudes in the horizontal direction is demonstrated. -33-201106024 &lt;Formation of Organic EL Display&gt; [Inventive Example 1] (Formation of Color Changing Filter Substrate) The color changing filter substrate of Example 1 of the present invention is in the form shown in Figs. 1A to 1C. Substrate 1 〇a ^ "Formation of the Black Matrix 14 of the Substrate 12" A black matrix (CK-7001: manufactured by Fujifilm Co., Ltd.) was formed by photolithography on glass (Eagle 2000: manufactured by Corning Incorporated). The gap between the sub-pixels is 30 μm in the longitudinal direction and 1 μμηη in the lateral direction. The size of the opening is 300 μm χ χ 1 ΟΟ μιη · The spacing per 1 pixel is 330 μm. "Formation of Color Filters 16 (R, G, Β)" On the glass forming the black matrix, a red filter (CR-700 1 : manufactured by Fujifilm Co., Ltd.) and a green filter (CG-7001: A vacuum filter (CB-7 00 1: manufactured by Fujifilm Co., Ltd.) is manufactured by Fujifilm Co., Ltd. 'Color filter is formed by photolithography. The film thickness of each layer is Ιμπι. The color filter formed has a wide size of ι〇6μηι, and the color grading sheets of the respective colors are formed into a stripe pattern. <<Formation of lyophilic layer 18>> A tantalum nitride having a film thickness of 300 μm is formed by a plasma CVD method using a plasma CVD apparatus using monodecane (SiH4), ammonia (ΝΗ3), and nitrogen (Ν2) as source gases. SiN). -34- 201106024 "Formation of the bank 20" A bank was formed on both sides of the stripe pattern of the color filter by photolithography using an acrylic resin VP A 100 (manufactured by Nippon Steel Chemical Co., Ltd.). The width of the levee is ΙΟμιη', which is 5μΐΏ from the surface of the colored furnace. At this time, on the black matrix line of 300 μm wide in the lower part of the blue filter line, the side is cut away, and a projecting portion of 2 5 μm X and 2 0 μm in width is formed at the same time. "Formation of the spacers 2 2" The acrylic resin VP A 100 (manufactured by Nippon Steel Chemical Co., Ltd.) was used to form a flat surface at intervals of 3 3 0 μm by photolithography in such a manner that one pixel was disposed in one pixel. A spacer that is viewed in a dot pattern of Φ 7 μm. The soundness of the spacer is adjusted so that the number of revolutions of the spin coater is 1.5 μm from the surface of the bank, and the bank formed on the black matrix line of 3 Ο μ „ wide on the line of the blue color filter is extended. A spacer is formed on the upper portion. "Surface treatment" Before the formation of the color-changing film, the plasma is applied with a gas of 2000 SCCM and a gas current of kW5 kW for 120 seconds, followed by a subsequent treatment within 1 hour. Formation of a color-changing film. "Formation of color-changing film 24 (R, G)" The green-transformed film was formed as follows. That is, the toluene 1 000 weight portion was adjusted, and the first coloring matter·coumarin 6+ was adjusted. Ink 2·100-201106024, using an inkjet device (Litrexl20L manufactured by Litrex), a film thickness of 50 在 in a nitrogen atmosphere using an inkjet device (Mole ratio: coumarin 6: DEQ = 48: 2) The green conversion film of nm. The drying of the ink was carried out using a vacuum drying oven without breaking the nitrogen atmosphere at a vacuum of 1.0 M 0_3 Pa at a temperature of 100 ° C. The red conversion film was formed as follows. , adjust toluene 1 000 parts by weight, first pigment: Bean 6 + second pigment: DCM 50 weight (molar ratio of coumarin 6: DCM = 48: 2) ink, using an inkjet device (Litrexl20L manufactured by Litrex), film thickness 500nm in a nitrogen atmosphere The red conversion film. The drying of the ink is carried out using a vacuum drying oven without breaking the nitrogen atmosphere at a vacuum of 1.0 XI (Γ3 Pa temperature l〇〇°C. "Formation of barrier layer 26" does not destroy the vacuum, use In a plasma CVD apparatus, a barrier layer is formed by depositing tantalum nitride (SiN) having a thickness of Ιμπι by a plasma CVD method using monodecane (SiH4), ammonia (NH3), and nitrogen (N2) as source gases. When the SiN was deposited, the temperature of the substrate was 10 (TC or less.) The color-changing filter substrate 10 of the present invention was obtained as described above. (Formation of an organic EL device substrate) The organic EL device of Example 1 of the present invention The substrate is a substrate of the type shown in Fig. 3. 3 - 36 - 201106024 "Formation of TFT element 34 of the substrate 3 2, wiring, external connection terminal, planarization layer 36, and passivation layer" 200 x 200 mm x thickness 〇 The equivalent of 6 independent sub-paints on a .7mm alkali-free glass plate The position of the element 'forms a TF τ element (switching element), a wiring, and an external connection terminal portion, and forms a planarization layer having a film thickness of 2 μm and a SiNx passivation layer having a film thickness of 300 nm so as to cover these. The planarization layer and the passivation layer form a contact hole for connecting the TFT element and the reflective electrode. "Bottom layer, and formation of the reflective electrode 38" Next, using an RF planar magnetron sputtering device in an argon atmosphere An IZO film (lower bottom layer) having a film thickness of 10 nm was formed. Next, an aluminum layer having a film thickness of 10 nm was formed by sputtering. Further, a mask formed of a photoresist "OFRP-800" (manufactured by Tokyo Ohka Kogyo Co., Ltd.) was used to wet-etch the aluminum layer to form a reflective electrode composed of a plurality of portions. Each of the plurality of portions of the reflective electrode is interposed between the IZO film and the plurality of contact holes provided in the planarization layer and the passivation layer, and is connected to the TFT element of the switching element in a one-to-one manner. The respective dimensions of the plurality of portions of the reflective electrode are 280 μm in the longitudinal direction and 90 μηη in the lateral direction. <<Formation of Gap Layer>> An IZO film (gap layer) having a film thickness of 50 nm was formed by sputtering to cover the reflective electrode. Then, the two IZO films are formed by wet etching to form a gap between the lower underlayer and the reflective electrode under the reflective electrode.

S -37- 201106024 層。下底層及間隙層,係由被形成於對應於反 數部分的位置之複數部分所構成,複數部分之 爲縱方向3 00μηι、橫方向ΙΟΟμηι。 《絕緣層40的形成》 使用濺鍍裝置,形成300nm作爲畫素分g 膜(絕緣層)。那時候的條件,作爲標靶使用 時作爲濺鍍氣體使用氬氣與氧氣之分壓比爲1 氣體,功率爲2.5kW,氣體分壓爲0.5Pa。 接著,塗佈正型光阻(東京應化工業( TFR- 1 25 0 ),使用特定圖案的遮罩,進行曝光 成光阻圖案。 進而,使用ICP電漿型乾式蝕刻裝置,流 :100SCCM、CHF3 氣體:100SCCM、Ar 氣體 ,在氣體分壓20Pa、附加電力1 5 00W的條件 。其後,在前述裝置流以〇2氣體:5 00SCCM 施加電力2kW之下,進行灰化除去光阻,在 反射電極的複數部分的間隙層以下的構造之位 方向260μιη'橫方向86μιη之具有複數開口部f 《陰極緩衝層、及有機EL層42的形成》 把如以上所述得到的層積體配置於蒸鍍裝 陰極緩衝層及有機EL層。以不破壞真空的方 成膜厚1.5nm的鋰所構成的陰極緩衝層、膜厚 射電極的複 分別的尺寸 隹膜之Si02 單晶砂,同 對1之濺鏟 设)製造: 、顯影,形 以SF6氣體 :25 0SCCM 下進行蝕刻 '在 40Pa 、 覆蓋對應於 置,得到縱 j絕緣層。 置內,層積 式,依序形 20nm之三 -38- 201106024 (8 -經基喹淋)銘(Alq3)所構成的電子輸送層 '膜厚 30nm 的 4,4’-bis ( 2,2’-diphenylvinyl ) biphenyl ( DPVBi )所構成的有機發光層、膜厚l〇nm 24,4,-bis[N-(l- naphtl ) -N-phenylamino]biphenyl ( α-NPD )所構成的正 孔輸送層,及膜厚100 nm之銅鈦菁(CuPc)所構成的正 孔注入層。於這些層之成膜時,使蒸鍍裝置內的真空槽的 內壓減壓至1 xl〇_4Pa,使分別的層以〇.lnm/s的蒸鍍速度 堆積。 《透明電極44的形成》 接著,以不破壞真空地形成有機EL層之層積體移動 至對向濺鍍裝置,使用濺鍍法形成具有15 Onm膜厚的IZO 膜,得到透明電極。 《無機障壁層46的形成》 進而,把不破壞真空形成透明電極的層積體移動至 CVD裝置,跨全面使堆積膜厚2μιη之SiN膜而形成無機 障壁層。 如以上所述進行,得到有機EL元件基板。 (變色濾光片基板10a與有機EL基板30之貼合) 使如以上所述進行而得到的變色濾光片基板與有機 EL基板’移動至內部氧濃度被控制在5ppm以及水分濃度 被控制在5Ppm以下之貼合裝置。接著,使處理面(被形 -39- 201106024 成變色濾光片膜之面)成爲上側的方式設置變色濾光片基 板,使用分配器於複數之顯示部之分別的外周,以無縫的 方式塗佈環氧系紫外線硬化黏接劑而形成年階層。接著, 於各顯數部的中央之一點,滴下黏度比黏階層用的紫外線 硬化型環氧系黏接劑更低的熱硬化型環氧樹脂黏接劑。 接著,使處理面(形成有機EL層等之面)朝下的狀 態下設置有機EL元件基板,使處理面彼此對向。在此狀 態,使貼合裝置內減壓至約1 〇Pa程度,使有機EL元件 基板及變色濾光片接近至約20μιη之間隔。使用貼合裝置 的對準機構,進行兩基板的位置對準。 接著,使貼合裝置內回到大氣壓,對兩基板,在朝這 些基板接近的方向上施加荷重。於此階段,隨著裝置內的 壓力變化兩基板更爲接近,在變色濾光片基板上之堤接觸 於有機EL基板的時間點停止接近。伴隨著兩基板的接近 ,被滴下的塡充劑朝向顯示部的周緣部移動,全方位地擴 開而塡充顯示部全體。 接著,由變色濾光片基板側僅對黏接層照射紫外線而 使黏接層暫硬化,取出至一般環境。使用自動玻璃劃線器 及破裂裝置,使所得到的貼合物,分割爲6個獨立的有機 EL顯示器。 把得到的有機EL顯示器,跨1個小時在加熱爐中加 熱至80°C,實施塡充劑的硬化、及黏接層的正式硬化。加 熱步驟結束後,把有機EL顯示器跨3 0分鐘在爐內自然 冷卻而取出。最後,把有機EL顯示器配置於乾蝕刻裝置 -40- 201106024 內,除去覆蓋外部接續端子的障壁層。 如以上所述地進行,得到本發明例1之有機EL顯示 器。 [本發明例2] 於本發明例2,變色濾光片基板爲圖2 A〜圖2C所示 的型式之基板l〇b,有機EL元件基板爲圖3所示的型式 之基板3 0。 與本發明例1同樣,進行彩色濾光片、新液層、變色 層、障壁層等的形成。此外,與本發明例1同樣也形成有 機EL基板。 又,堤的寬幅爲8μηι,由彩色濾光片表面起算的高度 爲3·5μηι。於其上以堤著色部(CK-7001:富士軟片公司 製造)進行1 · 5 μηι之覆蓋。結果,堤著色部之覆蓋後的堤 全體的寬幅成爲1 〇μπι。針對間隔件係在堤形成後,進行 塗布於堤上以成爲1·5μηι的厚度的方式形成。 如以上所述地進行’得到本發明例2之有機EL顯示 器。 [比較例1] 於比較例1 ’變色濾光片基板爲圖4 Α〜圖4C所示的 基板l〇c,有機EL元件基板爲圖3所示的型式之基板30 。亦即’與本發明例1同樣,進行彩色濾光片、新液層、 變色層、障壁層等的形成,得到變色濾光片基板,與本發 -41 - 201106024 明例1同樣也形成有機EL基板,將這些貼合’得到比較 例1之有機EL顯示器。 又,圖4A〜圖4C所示的變色濾光片基板l〇c之構成 要素12〜26,與顯示於圖1A〜圖1C的變色濾光片基板 l〇a之對應的構成要素是相同的。 但是,於比較例1之變色濾光片基板1 〇c,堤的形成 ,不形成伸出部,爲單純的條紋圖案。進而,針對間隔件 係在堤形成後,進行塗布於堤上以成爲1 . 5 μηι的厚度的方 式形成。 如以上所述地進行,得到比較例1之有機EL顯示器 &lt;評估項目&gt; (關於塡充樹脂的括開之貼合評估) 針對各本發明例1、2及比較例1之變色濾光片基板 之各個,進行關於塡充樹脂的擴開的評估。 把各例之變色濾光片基板移動至貼合裝置,使變色濾 光片基板之處理面朝上地設置,使用分配器把環氧系紫外 線硬化黏接劑無縫地塗佈,形成所謂的堤。接著,於畫面 中央附近滴下低黏度( 3 00mPa*s)的熱硬化型環氧黏接劑 。作爲滴下裝置,使用空氣壓控制加注射器(syringe )之 分配器系統。 進而,假設有機EL基板,把玻璃(Eagle2000 :康寧 )’在使變色濾光片基板與處理面彼此對向的狀態,減壓 -42- 201106024 至約l〇Pa程度後使接近至約20μηι,配合進畫素位置後回 到大氣壓而附加些許的荷重。 接著,由變色濾光片基板側僅對外周密封材黏接部照 射紫外線使其暫硬化。其後,將此放入加熱爐在95 °C加熱 1小時,在爐內自然冷卻30分鐘而取出後,評估氣泡之 混入數目以及塡充樹脂的擴展。 又,針對各例,於進行密封的各1 0基板合計60片面 板,關於熱硬化性環氧黏接劑的突出不良及發光部之氣泡 的混入之發生數的評估結果顯示於表1。 (混色評估) 針對各本發明例1、2及比較例1之有機EL顯示器 之各個,使用柯尼卡美能達製造之CS 1 000,以配合於白 色D6 5的RGB各色之色度座標之平均値進行評估。其結 果倂記於表1。 [表1] 貼合評估 混色評估;色度座標(x,y) 突出 不良 氣泡 混入 紅 綠 藍 對NTSC色 再現範圍 本發明例1 0 1 0. 5 93, 0,385 0. 2 5 2, 0.673 0. 116, 0. 1 2 5 7 2% 本發明例_2- 1 1 0. 6 3 1, 0.3 54 0. 2 4 6, 0.678 0. 115, 0. 1 2 4 8 0% 比較例1 1 1 0. 5 8 5, 0. 3 92 0. 2 5 3, 0.672 0. 117, 0. 1 2 6 7 0% -43- 201106024 根據表1,於本發明例1、2,確認了氣泡的混入,但 該混入與比較例1爲同程度,經判定本發明例1、2與比 較例1之塡充樹脂的擴展沒有差異。 此外,應該是在本發明例1,與比較例1相比藉由抑 制貼合的參差不齊(突出不良)而擴展色再現範圍,在本 發明例2,可以防止來自鄰接畫素的光的進入,進而擴展 色再現範圍。 由以上,於本發明的範圍內之本發明例1、2,於根 據噴墨法之變色濾光片基板的形成,可說是與比較例相比 實現了同等的樹脂塡充性,而且可以形成富於色再現性的 辨色濾光片基板。 [實施例2] 以下,在實施例2,針對於堤間被配設埋入構件的前 述型式2的變色濾光片基板之效果進行實證。 &lt;變色濾光片基板之形成&gt; [本發明例3] (變色濾光片基板之形成) 本發明例3之變色濾光片基板爲圖5所示的型式之基 板 1 0 d。 又,圖5所示的變色濾光片基板10d之構成要素12 〜26’與顯示於圖1A〜圖1C的變色濾光片基板10a之對 應的構成要素是相同的。又,在圖5所示之例,在藉由堤 -44 - 201106024 2〇與藍色濾光片16B所區劃的區域,被形成埋入構件28 ,進而於其上被形成間隔件22這一點,與圖1A〜圖1C 所示之例不同。又,在本例,堤2 0與埋入構件2 8係同時 以相同材料形成的,所以成爲一體的構造,於圖5,爲了 強調這些構件20、28爲不同物,而在其邊界賦予虛線。 《對基板12之黑矩陣14、彩色濾光片16(R、G、B)的 形成》 於1737玻璃上,使用黑矩陣(CK-7001:富士軟片 公司製造),紅色濾光片(CR-7001:富士軟片公司製造 )、綠色濾光片(CG-7001:富士軟片公司製造)、及藍 色濾光片(CB-7001:富士軟片公司製造),以光蝕刻法 形成彩色濾光片。各層的膜厚分別爲1 μιη。形成的彩色濾 光片之副畫素的尺寸爲3 00pm&gt;&lt;l〇〇pm,副畫素間之間係 爲縱方向30 μηι、橫方向10 μΐΏ。各色之彩色濾光片係形成 爲條紋圖案。 《親液層1 8的形成》 使用電漿CVD裝置’作爲原料氣體用單矽烷(siH4 )、氨(NH3)以及氮氣(N2),以電漿CVD法,堆積 膜厚300μπι的氮化砂(SiN)。 《堤20及埋入構件28的形成》 使用丙嫌酸系樹脂V25 9PAP5(新日鐵化學製造), -45- 201106024 以光蝕刻法於紅色濾光片(CR-700 1 :富士軟片公司製造 )、綠色濾光片(CG-700 1 :富士軟片公司製造)的兩側 ,形成條紋圖案狀之寬幅ΙΟμηι、厚度5μηι之堤。於藍色 濾光片(CB-700 1 :富士軟片公司製造)之上,與堤統括 形成埋入構件。 《光間隔件22的形成》 使用丙烯酸系樹脂V2 5 9PAP5C新日鐵化學製造), 於被形成在藍色濾光片上的埋入構件之上,以1畫素配設 1個的方式以3 00μπι的間隔,平面俯視Φ7μηι的點狀圖案 形成厚度2μπι之光間隔件。 《表面處理》 變色膜之形成前,先流以2000SCCM之Ν2氣體進行 施加電力爲〇.5kW,120秒鐘之電漿處理。其後接著於1 小時內進行變色膜的形成。 《變色膜24 (R、G)的形成》 針對綠色變色膜,調整甲苯1000重量部,第1色素 :香豆素6 +第2色素:DEQ50重量部(莫耳比爲香豆素 6 : DEQ = 4 8 :2)之油墨,使用噴墨裝置(Litrex製造之 Litrexl20L),在氮氣氛圍中形成膜厚500nm的綠色變換 膜。油墨的乾燥,係不破壞氮氣氛圍地使用真空乾燥爐, 在真空度l.〇xl(T3Pa、溫度l〇〇t下進行的。 -46 - 201106024 針對紅色變色膜’調整甲苯1 000重量部’第1 :香豆素6 +第2色素:DCM50重量部(莫耳比爲香 6: DCM = 48: 2)之油墨’使用噴墨裝置(Litrex製 Litrexl20L),在氮氣氛圍中形成膜厚50〇nm的紅色 膜。油墨的乾燥,係不破壞氮氣氛圍地使用真空乾燥 在真空度l.〇xl『3Pa、溫度100°C下進行的。 《障壁層26的形成》 不破壞真空,以電漿CVD裝置’作爲原料氣體 矽烷(SiH4)、氨(NH3)以及氮氣(N2),以電漿 法,堆積膜厚Ιμηι的氮化矽(SiN )而形成障壁層。 ,堆積SiN時基板溫度在100°C以下。 如以上所述地進行,得到本發明例3之變色濾光 板 l〇d 〇 [本發明例4] 本發明例4之變色濾光片基板爲圖6所示的型式 板 1 0 e。 又’圖6所示的變色濾光片基板i〇e之構成要^ 〜28,與顯示於圖5的變色濾光片基板l〇d之對應的 要素是相同的。又’在圖6所示之例,在藉由堤20 色彩色濾光片1 6B區劃的區域形成的埋入構件2 8, 與堤20同時被形成這一點,與圖5所示之例不同。 與本發明例3同樣進行,形成彩色濾光片及新液 色素 豆素 造之 變換 爐, 用單 C VD 此處 片基 之基 % 1 2 構成 μ m 〆、rm. 係未 層, -47- 201106024 於條紋圖案的兩側以寬幅1 Ομηι、厚度5 μηι形成堤。接著 ’於藍色濾光片之上使用丙烯酸系樹脂V259PAP5C新日 鐵化學製造),以光蝕刻法在堤間形成厚度5 μιη之埋入 構件。光間隔件,與本發明例3同樣,係以光鈾刻法在被 形成於藍色濾光片上的埋入構件上以對1畫素配設1個的 方式以3 0 0 μ m的間隔,形成平面俯視爲φ 7 μ m之點狀圖案 〇 接著,與本發明例3同樣形成變色層' 障壁層,得到 本發明例4之變色濾光片基板1 〇e。 [比較例2] 比較例2之變色濾光片基板爲圖7所示的型式之基板 1 Of。 又,圖7所示的變色濾光片基板10f之構成要素12 〜26,與顯示於圖5的變色濾光片基板1 〇d之對應的構成 要素是相同的。又,在圖7所示之例,未在藉由堤20與 藍色彩色濾光片16B區劃的區域形成埋入構件這一點,與 圖5所示之例不同。 與本發明例4同樣,形成彩色濾光片,形成新液層、 堤、變色層、障壁層》針對光間隔件,在堤形成後,於被 形成於彩色濾光片之條紋圖案間的堤上以成爲2μηι厚的 方式形成。 如以上所述地進行,得到比較例2之變色濾光片基板 1 Of 〇 -48- 201106024 &lt;評估項目&gt; (關於塡充樹脂的括開之貼合評估) 針對各本發明例3、4及比較例2之變色濾光片基板 之各個,進行關於塡充樹脂的擴開的評估。 把各例之變色濾光片基板移動至貼合裝置,使變色濾 光片基板之處理面朝上地設置,使用分配器把環氧系紫外 線硬化黏接劑無縫地塗佈,形成所謂的堤。接著,於畫面 中央附近滴下低黏度的熱硬化型環氧黏接劑。作爲滴下裝 置,使用空氣壓控制加注射器(syringe )之分配器系統。 進而,假設有機EL基板,把1 73 7玻璃,在使變色 濾光片基板與處理面彼此對向的狀態,減壓至約1 〇Pa程 度後使接近至約20μηι,配合進畫素位置後回到大氣壓而 附加些許的荷重。 接著’由變色濾光片基板側僅對外周密封材黏接部照 射紫外線使其暫硬化。其後,將此放入加熱爐在95 t加熱 1小時’在爐內自然冷卻3 0分鐘而取出後,以氣泡之混 入數目評估塡充樹脂的擴展。 又’針對各例,觀察進行密封的各1 2個面板後之結 果’確認各有1個面板有氣泡混入。因而,判斷本發明例 3、4及比較例2之塡充樹脂的擴展沒有不同。 (變色油墨漏逸評估) 變色油墨,一般吸收藍色發光,而使發出綠色、紅色 光。因此’於藍色濾光片上溢出變色油墨的場合,導致藍 -49- 201106024 色強度降低。 在此,針對本發明例3、4及比較例2,以螢光顯微 鏡觀察變色油墨塗佈後之各1 2個面板。 結果,往藍色濾光片上之變色油墨的油墨漏逸處所, 於比較例2,所有1 2000條線中有478條線發生漏逸。對 此,於本發明例3、4,因爲形成埋入構件,所以沒有發 生往藍色濾光片上之變色油墨的流入,可以抑制油墨漏逸 〇 如此般,由貼合評估及漏逸評估的結果,本發明例3 、4,與本發明例1、2同樣,可以抑制來自鄰接畫素的光 的進入,可說是可以實現優異的色再現範圍。 由以上之實施例1、2,根據本發明的話,於根據噴 墨法之變色濾光片基板的形成,可以得到不損及密封性能 ,且可實現安定的保存壽命的變色濾光片基板。藉由使用 這樣的變色濾光片基板,可以實現良好的生產性,高的可 信賴性,於使用該變色濾光片基板的有機EL顯示器,可 以實現高精細化與低成本化。 又,特別是根據前述型式2的實施型態(實施例2之 本發明例3、4 ),可以形成高水準地抑制了油墨漏逸導 致藍色發光強度的降低之變色濾光片基板。 【圖式簡單說明】 圖1 A係顯示本發明之變色濾光片蕋板之一例之平面 圖。 -50- 201106024 圖1 B係顯示本發明之變色濾光片基板之一例,係圖 1 A之IB-IB線剖面圖。 圖1 C係顯示本發明之變色濾光片基板之一例,係圖 1 A之IC -1C線剖面圖。 圖2A係顯示本發明之變色濾光片基板之一例之平面 圖。 圖2B係顯示本發明之變色濾光片基板之一例,係圖 2 A之11B -11B線剖面圖。 圖2C係顯示本發明之變色濾光片基板之一例,係圖 2A之IIC-IIC線剖面圖。 圖3係顯示與變色濾光片基板貼合的有機E L基板之 一例之剖面圖。 圖4A係顯示本發明之變色濾光片基板之一例之平面 圖。 圖4B係顯示本發明之變色濾光片基板之一例,係圖 4A之IVB-IVB線剖面圖。 圖4C係顯示本發明之變色濾光片基板之一例,係圖 4A之IVC-IVC線剖面圖。 圖5係顯示本發明之變色濾光片基板之一例之剖面圖 〇 圖6係顯示本發明之變色濾光片基板之一例之剖面圖 圖7係顯示從前的變色濾光片基板之一例之剖面圖。 201106024 【主要元件符號說明】 l〇a,10b,10d,10e:相關於本發明之變色濾光片基板 1 2 :透明基板 14 :黑矩陣 16R :紅色濾光片 16G :綠色濾光片 16B :藍色濾光片 1 8 :親液層 20 :堤 20a :堤著色部 2 2 :光間隔件 2 4 R :紅色變換膜 24G :綠色變換膜 24B :藍色變換膜 2 6 :障壁層 2 8 :埋入構件 -52-S -37- 201106024 layer. The lower layer and the gap layer are composed of a plurality of portions formed at positions corresponding to the inverse portion, and the plurality of portions are in the longitudinal direction of 300 ηηι and the lateral direction ΙΟΟμηι. <<Formation of Insulating Layer 40>> Using a sputtering apparatus, 300 nm was formed as a pixel film (insulating layer). At that time, as a target, the partial pressure ratio of argon gas to oxygen gas was 1 gas, the power was 2.5 kW, and the gas partial pressure was 0.5 Pa. Next, a positive photoresist (TFR-1250) was applied and exposed to a photoresist pattern using a mask of a specific pattern. Further, an ICP plasma type dry etching apparatus was used, and the flow was 100 SCCM. CHF3 gas: 100 SCCM, Ar gas, a partial pressure of 20 Pa, and an additional power of 1 500 W. Thereafter, under the device flow of 2 kW of 〇2 gas: 500 SCCM, ashing is performed to remove the photoresist. The bit direction 260 μm of the structure below the gap layer of the plurality of portions of the reflective electrode has a plurality of openings f. The formation of the cathode buffer layer and the organic EL layer 42. The laminate obtained as described above is disposed on the layered body. The cathode buffer layer and the organic EL layer are vapor-deposited, and the cathode buffer layer composed of lithium having a thickness of 1.5 nm without breaking the vacuum and the SiO 2 single crystal of the film thickness of the film thickness electrode are the same. 1 Splash shovel) Manufacture: Development, shape SF6 gas: etched at 25 0SCCM 'at 40Pa, the cover corresponds to the placement, and the longitudinal j insulation layer is obtained. Set inside, layered, in the order of 20nm three-38- 201106024 (8 - by the base quinoline) Ming (Alq3) composed of the electron transport layer 'film thickness of 4nm 4,4'-bis (2,2 '-diphenylvinyl ) biphenyl ( DPVBi ) consisting of an organic light-emitting layer and a film thickness of 〇nm 24,4,-bis[N-(l-naphtl ) -N-phenylamino]biphenyl (α-NPD ) A transport layer, and a positive hole injection layer composed of copper phthalocyanine (CuPc) having a thickness of 100 nm. At the time of film formation of these layers, the internal pressure of the vacuum chamber in the vapor deposition apparatus was reduced to 1 x 1 〇 4 Pa, and the respective layers were deposited at a deposition rate of 〇.lnm/s. <<Formation of Transparent Electrode 44>> Next, a laminate in which an organic EL layer was formed without breaking the vacuum was moved to a counter sputtering apparatus, and an IZO film having a film thickness of 15 Onm was formed by sputtering to obtain a transparent electrode. <<Formation of Inorganic Barrier Layer 46>> Further, a laminate in which the transparent electrode is not broken by vacuum is moved to a CVD apparatus, and an SiN film having a thickness of 2 μm is deposited over the entire surface to form an inorganic barrier layer. The organic EL element substrate was obtained as described above. (The bonding of the color-changing filter substrate 10a and the organic EL substrate 30) The color-changing filter substrate and the organic EL substrate 'obtained as described above are moved until the internal oxygen concentration is controlled to 5 ppm and the water concentration is controlled. 5Ppm or less bonding device. Next, a color-changing filter substrate is provided so that the processing surface (the surface of the color-changing filter film is formed) is used, and the dispenser is used in a separate manner on the outer periphery of the plurality of display portions. An epoxy-based ultraviolet curing adhesive is applied to form an annual hierarchy. Next, at one point in the center of each of the display portions, a thermosetting epoxy resin adhesive having a lower viscosity than the ultraviolet curable epoxy-based adhesive for the adhesive layer is dropped. Then, the organic EL element substrate is placed in a state where the processing surface (the surface on which the organic EL layer or the like is formed) faces downward, and the processing surfaces are opposed to each other. In this state, the pressure inside the bonding apparatus was reduced to about 1 〇Pa, and the organic EL element substrate and the color-changing filter were brought close to an interval of about 20 μm. The alignment of the two substrates is performed using the alignment mechanism of the bonding device. Then, the inside of the bonding apparatus is returned to the atmospheric pressure, and the load is applied to the two substrates in the direction in which the substrates are approaching. At this stage, the two substrates are closer as the pressure in the apparatus changes, and the approach is stopped when the bank on the color-changing filter substrate contacts the organic EL substrate. With the approach of the two substrates, the dropped sputum is moved toward the peripheral portion of the display portion, and is expanded in all directions to expand the entire display portion. Next, the adhesive layer is irradiated with ultraviolet rays only from the color filter substrate side, and the adhesive layer is temporarily cured, and taken out to a general environment. The resulting laminate was divided into six separate organic EL displays using an automatic glass scribe and a rupture device. The obtained organic EL display was heated to 80 ° C in a heating furnace over one hour to carry out hardening of the entangled agent and final hardening of the adhesive layer. After the heating step, the organic EL display was naturally cooled in the furnace for 30 minutes and taken out. Finally, the organic EL display is placed in the dry etching apparatus -40-201106024, and the barrier layer covering the external connection terminals is removed. The organic EL display of Example 1 of the present invention was obtained as described above. [Inventive Example 2] In the second embodiment of the present invention, the color-changing filter substrate is the substrate 10b of the type shown in Figs. 2A to 2C, and the organic EL element substrate is the substrate 30 of the type shown in Fig. 3. In the same manner as in the first embodiment of the present invention, formation of a color filter, a new liquid layer, a color-changing layer, a barrier layer, and the like was performed. Further, an organic EL substrate was formed in the same manner as in the inventive example 1. Further, the width of the bank is 8 μm, and the height from the surface of the color filter is 3·5 μm. On the other hand, the bank coloring unit (CK-7001: manufactured by Fujifilm Co., Ltd.) was covered with 1 · 5 μηι. As a result, the width of the entire bank covered by the bank coloring portion becomes 1 〇μπι. The spacer is formed so as to be applied to the bank after the bank is formed to have a thickness of 1·5 μm. The organic EL display of Example 2 of the present invention was obtained as described above. [Comparative Example 1] In Comparative Example 1, the color-changing filter substrate was the substrate 10c shown in Figs. 4 to 4C, and the organic EL element substrate was the substrate 30 of the type shown in Fig. 3. In other words, in the same manner as in the first embodiment of the present invention, a color filter, a new liquid layer, a color-changing layer, a barrier layer, and the like are formed, and a color-changing filter substrate is obtained, and an organic film is formed in the same manner as in the first example of the present invention - 41 - 201106024. The EL substrate was bonded to these to obtain the organic EL display of Comparative Example 1. Further, the constituent elements 12 to 26 of the color-changing filter substrate 10c shown in FIGS. 4A to 4C are the same as the constituent elements corresponding to the color-changing filter substrate 10a shown in FIGS. 1A to 1C. . However, in the color-changing filter substrate 1 〇c of Comparative Example 1, the bank was formed without a protruding portion, and was a simple stripe pattern. Further, the spacer is formed after the bank is formed and applied to the bank to have a thickness of 1.5 μm. The organic EL display of Comparative Example 1 was obtained as described above. [Evaluation item&gt; (Assessment of adhesion of the filling resin) The color filter of each of Inventions 1, 2 and Comparative Example 1 was obtained. Each of the sheet substrates was evaluated for the expansion of the filling resin. The color-changing filter substrate of each example is moved to a bonding apparatus, and the processing surface of the color-changing filter substrate is placed upward, and the epoxy-based ultraviolet curing adhesive is seamlessly coated by a dispenser to form a so-called embankment. Next, a low-viscosity (300 mPa*s) thermosetting epoxy adhesive was dropped near the center of the screen. As the dropping device, a dispenser system of an air pressure control plus syringe is used. Further, in the case of the organic EL substrate, the glass (Eagle 2000: Corning) is placed in a state in which the color filter substrate and the processing surface are opposed to each other, and the pressure is reduced to about 20 μm from -42 to 201106024 to about 10 ÅPa. After adding the pixel position, return to the atmospheric pressure and add a little load. Next, only the outer peripheral sealing material adhering portion is irradiated with ultraviolet rays from the color filter substrate side to be temporarily hardened. Thereafter, this was placed in a heating furnace and heated at 95 ° C for 1 hour, and after natural cooling in the furnace for 30 minutes, the number of bubbles mixed and the expansion of the filling resin were evaluated. In addition, in each of the examples, the results of the evaluation of the number of occurrences of the poor adhesion of the thermosetting epoxy adhesive and the occurrence of the incorporation of the bubbles in the light-emitting portion are shown in Table 1. (Color Mixing Evaluation) For each of the organic EL displays of Inventive Examples 1, 2 and Comparative Example 1, CS 1 000 manufactured by Konica Minolta was used to match the average of the chromatic coordinates of the RGB colors of the white D6 5 .値 Conduct an assessment. The results are summarized in Table 1. [Table 1] Evaluation evaluation color mixing evaluation; chromaticity coordinates (x, y) highlighting bad bubbles mixed into red, green and blue to NTSC color reproduction range Example 1 0 1 0. 5 93, 0,385 0. 2 5 2, 0.673 0 116, 0. 1 2 5 7 2% Inventive Example 2 - 1 1 0. 6 3 1, 0.3 54 0. 2 4 6, 0.678 0. 115, 0. 1 2 4 8 0% Comparative Example 1 1 1 0. 5 8 5, 0. 3 92 0. 2 5 3, 0.672 0. 117, 0. 1 2 6 7 0% -43- 201106024 According to Table 1, in the inventive examples 1, 2, the bubble was confirmed. Although the mixing was carried out in the same manner as in Comparative Example 1, it was judged that there was no difference in the expansion of the retanning resin of Examples 1 and 2 of the present invention and Comparative Example 1. Further, in the first example of the present invention, the color reproduction range is expanded by suppressing the unevenness (protrusion defect) of the bonding as compared with the comparative example 1, and in the second example of the present invention, the light from the adjacent pixels can be prevented. Enter, thereby expanding the color reproduction range. As described above, in the first and second inventions of the present invention within the scope of the present invention, it is possible to achieve equivalent resin replenishability as compared with the comparative example in the formation of the color-changing filter substrate according to the ink-jet method. A color discrimination filter substrate having color reproducibility is formed. [Embodiment 2] Hereinafter, in the second embodiment, the effect of the color filter substrate of the above-described type 2 in which the embedding member is disposed in the bank is demonstrated. &lt;Formation of color-changing filter substrate&gt; [Inventive Example 3] (Formation of color-changing filter substrate) The color-changing filter substrate of Example 3 of the present invention is a substrate of the type shown in Fig. 5, 10 d. Further, the constituent elements 12 to 26' of the color-changing filter substrate 10d shown in Fig. 5 are the same as the constituent elements corresponding to the color-changing filter substrate 10a shown in Figs. 1A to 1C. Further, in the example shown in Fig. 5, the buried member 28 is formed in a region partitioned by the bank-44 - 201106024 2〇 and the blue filter 16B, and the spacer 22 is formed thereon. It is different from the example shown in FIGS. 1A to 1C. Further, in this example, since the bank 20 and the embedding member 28 are formed of the same material at the same time, they are integrated, and in Fig. 5, in order to emphasize that these members 20 and 28 are different, a dotted line is provided at the boundary thereof. . "Formation of the black matrix 14 and the color filter 16 (R, G, B) of the substrate 12" on the 1737 glass, using a black matrix (CK-7001: manufactured by Fujifilm Co., Ltd.), a red filter (CR- 7001: manufactured by Fujifilm Co., Ltd., green filter (CG-7001: manufactured by Fujifilm Co., Ltd.), and blue filter (CB-7001: manufactured by Fujifilm Co., Ltd.), and a color filter is formed by photolithography. The film thickness of each layer was 1 μm. The size of the sub-pixel of the formed color filter is 300 pm &gt; l pm, and the sub-pixels are 30 μηι in the longitudinal direction and 10 μπ in the lateral direction. The color filters of the respective colors are formed in a stripe pattern. <<Formation of lyophilic layer 18>> A plasma CVD apparatus is used as a material gas to deposit a silicon nitride film having a thickness of 300 μm by a plasma CVD method using monodecane (siH4), ammonia (NH3), and nitrogen (N2). SiN). "Formation of the embankment 20 and the embedding member 28" The use of the acrylic acid resin V25 9PAP5 (manufactured by Nippon Steel Chemical Co., Ltd.), -45-201106024 by photolithography on the red filter (CR-700 1 : manufactured by Fujifilm Co., Ltd.) On both sides of the green filter (CG-700 1 : manufactured by Fujifilm Co., Ltd.), a wide ΙΟμηι in the shape of a stripe and a bank of 5 μηι in thickness are formed. On the blue filter (CB-700 1 : manufactured by Fujifilm Co., Ltd.), a buried member is formed integrally with the bank. "Formation of the optical spacer 22" is made of an acrylic resin V2 5 9PAP5C, manufactured by Nippon Steel Chemical Co., Ltd.), and is disposed on one of the embedding members formed on the blue color filter by one pixel. At a spacing of 3 00 μm, a dot pattern of Φ7μηι is planarly viewed to form a light spacer having a thickness of 2 μm. "Surface Treatment" Before the formation of the color-changing film, the first application of a gas of 2000 SCCM was applied to a plasma of 〇5 kW for 120 seconds. Thereafter, formation of a color changing film was carried out within 1 hour. <<Formation of Color Changing Film 24 (R, G)>> To the green color changing film, 1000 parts by weight of toluene was adjusted, and the first coloring matter: coumarin 6 + second coloring matter: DEQ50 weight portion (Mohr ratio is coumarin 6 : DEQ The ink of = 4 8 : 2) was formed into a green conversion film having a film thickness of 500 nm in a nitrogen atmosphere using an ink jet apparatus (Litrexl 20L manufactured by Litrex). The drying of the ink is carried out using a vacuum drying oven without damaging the nitrogen atmosphere, and the vacuum degree is 1. 〇xl (T3Pa, temperature l〇〇t. -46 - 201106024 Adjusting the toluene 1 000 weight portion for the red color changing film' 1st: Coumarin 6 + 2nd coloring matter: The ink of the weight part of DCM50 (Morbi is fragrant 6: DCM = 48: 2) 'The film thickness 50 was formed in nitrogen atmosphere using the inkjet apparatus (Litrexl20L by Litrex). The red film of 〇nm. The drying of the ink is carried out by vacuum drying at a vacuum degree of l.〇xl "3Pa, temperature 100 ° C without breaking the nitrogen atmosphere. "Formation of barrier layer 26" does not destroy the vacuum, electricity As a raw material gas silane (SiH4), ammonia (NH3), and nitrogen (N2), a slurry CVD apparatus forms a barrier layer by a plasma method by depositing a tantalum nitride (SiN) having a film thickness of ημηι. 100° C. or less. The color-changing filter of Example 3 of the present invention was obtained as described above. [Inventive Example 4] The color-changing filter substrate of Example 4 of the present invention is the type plate 1 shown in FIG. 0 e. Also, the composition of the color-changing filter substrate i〇e shown in Fig. 6 is required to be ~28, and The corresponding elements of the color-changing filter substrate 10d shown in Fig. 5 are the same. Further, in the example shown in Fig. 6, the buried structure is formed in the region defined by the bank 20 color filter 16B. The member 2 8 is formed at the same time as the bank 20, and is different from the example shown in Fig. 5. In the same manner as in the inventive example 3, a color filter and a new liquid pigment soybean conversion furnace are formed, and a single C VD is used. Here, the base of the base group 1 2 constitutes μ m 〆, rm. is an unlayered layer, -47- 201106024 forms a bank at a width of 1 Ομηι and a thickness of 5 μηι on both sides of the stripe pattern. Then 'blue filter On the top, an acrylic resin V259PAP5C (manufactured by Nippon Steel Chemical Co., Ltd.) was used, and a buried member having a thickness of 5 μm was formed between the banks by photolithography. In the same manner as in the third embodiment of the present invention, the optical spacer is provided by a photolithography method on a buried member formed on a blue color filter by arranging one pixel for one pixel to 300 μm. At the intervals, a dot pattern having a plan view of φ 7 μm was formed. Then, a color-changing layer barrier layer was formed in the same manner as in Example 3 of the present invention, and the color-changing filter substrate 1 〇e of Example 4 of the present invention was obtained. [Comparative Example 2] The color-changing filter substrate of Comparative Example 2 was a substrate 1 Of the type shown in Fig. 7 . Further, the constituent elements 12 to 26 of the color-changing filter substrate 10f shown in Fig. 7 are the same as the constituent elements corresponding to the color-changing filter substrate 1 〇d shown in Fig. 5 . Further, in the example shown in Fig. 7, the buried member is not formed in the region defined by the bank 20 and the blue color filter 16B, which is different from the example shown in Fig. 5. In the same manner as in the fourth embodiment of the present invention, a color filter is formed to form a new liquid layer, a bank, a color-changing layer, and a barrier layer. The light barrier is formed between the stripes of the color filter after the bank is formed. It is formed in such a manner as to be 2 μm thick. As described above, the color-changing filter substrate of Comparative Example 2 was obtained. Of-48-201106024 &lt;Evaluation item&gt; (Assessment of adhesion of the filling resin) For each of Invention Examples 3, 4 and each of the color-changing filter substrates of Comparative Example 2 were evaluated for the expansion of the filling resin. The color-changing filter substrate of each example is moved to a bonding apparatus, and the processing surface of the color-changing filter substrate is placed upward, and the epoxy-based ultraviolet curing adhesive is seamlessly coated by a dispenser to form a so-called embankment. Next, a low-viscosity thermosetting epoxy adhesive is dropped near the center of the screen. As the dropping device, a dispenser system of an air pressure control plus syringe is used. Further, in the case of the organic EL substrate, the 173 glass is placed in a state where the color filter substrate and the processing surface are opposed to each other, and the pressure is reduced to about 1 〇Pa to be close to about 20 μm, and the pixel is placed in the pixel position. Return to the atmospheric pressure and add a little load. Then, only the outer peripheral sealing material adhering portion is irradiated with ultraviolet rays by the color filter substrate side to be temporarily hardened. Thereafter, this was placed in a heating furnace and heated at 95 t for 1 hour, and after being naturally cooled in the furnace for 30 minutes, it was taken out, and the expansion of the filled resin was evaluated by the number of bubbles mixed. Further, for each of the examples, the results of the sealing of each of the 12 panels were observed. It was confirmed that one of the panels had air bubbles mixed therein. Therefore, it was judged that the expansion of the retanning resin of Examples 3 and 4 of the present invention and Comparative Example 2 did not differ. (Color-changing ink leakage evaluation) Color-changing ink generally absorbs blue light and emits green and red light. Therefore, when the color filter overflows on the blue filter, the color intensity of the blue-49-201106024 is lowered. Here, for each of Examples 3 and 4 and Comparative Example 2 of the present invention, each of the 12 panels after the application of the color-changing ink was observed by a fluorescent microscope. As a result, the ink leakage to the color changing ink on the blue filter, in Comparative Example 2, 478 lines out of all 1 2000 lines were leaky. On the other hand, in the inventive examples 3 and 4, since the embedding member was formed, the inflow of the color-changing ink onto the blue filter did not occur, and the ink leakage could be suppressed, and the evaluation of the fit and the evaluation of the leak were evaluated. As a result, in the inventive examples 3 and 4, similarly to the first and second embodiments of the present invention, it is possible to suppress the entry of light from the adjacent pixels, and it can be said that an excellent color reproduction range can be realized. According to the first and second embodiments, according to the present invention, in the formation of the color-changing filter substrate by the ink-jet method, it is possible to obtain a color-changing filter substrate which can achieve a stable shelf life without impairing the sealing performance. By using such a color-changing filter substrate, good productivity and high reliability can be achieved, and an organic EL display using the color-changing filter substrate can achieve high definition and low cost. Further, in particular, according to the embodiment of the above-described type 2 (Inventive Examples 3 and 4 of Example 2), it is possible to form a color-changing filter substrate which suppresses ink leakage and causes a decrease in blue light-emitting intensity at a high level. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1A is a plan view showing an example of a color filter panel of the present invention. -50-201106024 Fig. 1B shows an example of a color-changing filter substrate of the present invention, which is a cross-sectional view taken along line IB-IB of Fig. 1A. Fig. 1C shows an example of a color-changing filter substrate of the present invention, which is a cross-sectional view taken along line IC-1C of Fig. 1A. Fig. 2A is a plan view showing an example of a color-changing filter substrate of the present invention. Fig. 2B is a cross-sectional view showing an example of the color-changing filter substrate of the present invention, taken along line 11B-11B of Fig. 2A. Fig. 2C is a cross-sectional view showing a color filter substrate of the present invention, taken along line IIC-IIC of Fig. 2A. Fig. 3 is a cross-sectional view showing an example of an organic EL substrate bonded to a color-changing filter substrate. Fig. 4A is a plan view showing an example of a color-changing filter substrate of the present invention. Fig. 4B is a cross-sectional view showing an example of the color filter substrate of the present invention, taken along the line IVB-IVB of Fig. 4A. Fig. 4C is a view showing an example of the color-changing filter substrate of the present invention, which is a cross-sectional view taken along line IVC-IVC of Fig. 4A. 5 is a cross-sectional view showing an example of a color-changing filter substrate of the present invention. FIG. 6 is a cross-sectional view showing an example of a color-changing filter substrate of the present invention. FIG. 7 is a cross-sectional view showing an example of a color-changing filter substrate of the prior art. Figure. 201106024 [Description of main component symbols] l〇a, 10b, 10d, 10e: color-changing filter substrate according to the present invention 1 2: transparent substrate 14: black matrix 16R: red color filter 16G: green color filter 16B: Blue filter 18: lyophilic layer 20: bank 20a: bank coloring portion 2 2 : light spacer 2 4 R: red conversion film 24G: green conversion film 24B: blue conversion film 2 6 : barrier layer 2 8 : buried component -52-

Claims (1)

201106024 七、申請專利範圍: 1. 一種變色據光片基板’係具備: 基板、 被形成於前述基板上之至少副畫素部之具有不同 過波長的複數彩色濾光片、 被形成於前述基板的上方之非副畫素部之由硬化性樹 脂所構成的堤(bank)、 藉由噴墨法且以細長條(slit )圖案形成在至少一部 分之彩色濾光片之上方區域中之被區劃於前述堤之間的區 域用於吸收光源的光而發出與吸收波長不同的波長分布的 光之變色膜、及 於至少一部份之堤上藉由光蝕刻法形成的間隔件之變 色濾光片基板;其特徵爲: 形成前述間隔件之堤,與其他堤相比,於側面剖視圖 觀察時,在水平方向上伸出。 2 .如申請專利範圍第1項之變色濾光片基板,其中前 述硬化性樹脂係光硬化性樹脂或光熱倂用硬化性樹脂。 3 .如申請專利範圍第1項之變色濾光片基板,其中前 述堤係被形成於形成在前述基板上的黑矩陣的上方。 4 ·如申請專利範圍第1項之變色濾光片基板,其中前 述堤之至少一部份被著色。 5 ·如申請專利範圍第4項之變色濾光片基板,其中前 述著色爲黑色,且前述堤之可見光區域的透過率在10%以 下。 -53- 201106024 6. —種變色濾光片基板,其特徵爲具備: 基板、 被形成於前述基板上之至少副畫素部之具有不同的透 過波長的複數彩色濾光片、 被形成於前述基板的上方之非副畫素部之由硬化性樹 脂所構成的堤(bank)、 藉由噴墨法且以細長條(slit )圖案形成在至少一部 分之彩色濾光片之上方區域中之被區劃於前述堤之間的區 域用於吸收光源的光而發出與吸收波長不同的波長分布的 光之變色膜、 形成在位於前述區域中之不形成前述變色膜之區域的 兩側之堤間之由光硬化性樹脂或光熱倂用硬化性樹脂所構 成之埋入構件、及 於前述埋入構件上藉由光蝕刻法形成的間隔件; 前述堤與前述埋入構件係同時被形成的。 7. 如申請專利範圍第6項之變色濾光片基板,其中前 述光硬化性樹脂或光熱倂用硬化性樹脂硬化之後,對波長 範圍350〜500nm之光的折射率,至少比1.5還大。 8. 如申請專利範圍第6項之變色濾光片基板,其中前 述埋入構件,於側面剖視圖觀察時,含有1 〇μπι以上之相 對於堤上表面爲-1〜+ 1 μηι之平坦部。 -54-201106024 VII. Patent application scope: 1. A color-changing substrate according to the invention includes: a substrate; a plurality of color filters having different over-wavelengths formed on at least the sub-pixel portion formed on the substrate, formed on the substrate a bank composed of a curable resin on the upper non-sub-pixel portion, and a region formed by an inkjet method and a slit pattern formed in an upper region of at least a portion of the color filter a color changing film for absorbing light of a light source to emit light having a wavelength distribution different from the absorption wavelength, and a color filter for a spacer formed by photolithography on at least a portion of the bank a sheet substrate; characterized in that: the bank forming the spacer is protruded in a horizontal direction when viewed from a side cross-sectional view as compared with other banks. 2. The color-changing filter substrate according to the first aspect of the invention, wherein the curable resin is a photocurable resin or a curable resin for photothermal heating. 3. The color-changing filter substrate of claim 1, wherein the bank is formed above a black matrix formed on the substrate. 4. The color-changing filter substrate of claim 1, wherein at least a portion of the bank is colored. 5. The color-changing filter substrate of claim 4, wherein the coloration is black, and the transmittance of the visible light region of the bank is 10% or less. -53-201106024 6. A color-changing filter substrate comprising: a substrate; a plurality of color filters having different transmission wavelengths of at least a sub-pixel portion formed on the substrate; a bank made of a curable resin on the non-sub-pixel portion above the substrate, and a bank formed in an upper region of at least a part of the color filter by an inkjet method and a slit pattern a color-changing film that is used to absorb light of a light source and emit light having a wavelength distribution different from the absorption wavelength, and is formed in a bank between the banks on both sides of the region where the color-changing film is not formed in the region. An embedding member made of a photocurable resin or a photocurable curable resin, and a spacer formed by photolithography on the embedding member; and the bank and the embedding member are simultaneously formed. 7. The color-changing filter substrate of claim 6, wherein the photocurable resin or the photo-curable resin is cured, and the refractive index of light having a wavelength in the range of 350 to 500 nm is at least 1.5. 8. The color-changing filter substrate according to claim 6, wherein the embedded member has a flat portion of -1 to + 1 μηι on the upper surface of the bank when viewed from a side cross-sectional view. -54-
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