TW201105455A - Carrier for a silicon block - Google Patents

Carrier for a silicon block Download PDF

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Publication number
TW201105455A
TW201105455A TW99116390A TW99116390A TW201105455A TW 201105455 A TW201105455 A TW 201105455A TW 99116390 A TW99116390 A TW 99116390A TW 99116390 A TW99116390 A TW 99116390A TW 201105455 A TW201105455 A TW 201105455A
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TW
Taiwan
Prior art keywords
carrier
sectional area
cross
smaller cross
longitudinal
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TW99116390A
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Chinese (zh)
Inventor
Sven Worm
Original Assignee
Schmid Gmbh & Co Geb
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Publication of TW201105455A publication Critical patent/TW201105455A/en

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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B28WORKING CEMENT, CLAY, OR STONE
    • B28DWORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0058Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
    • B28D5/0082Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for supporting, holding, feeding, conveying or discharging work
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B28WORKING CEMENT, CLAY, OR STONE
    • B28DWORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0058Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
    • B28D5/0076Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for removing dust, e.g. by spraying liquids; for lubricating, cooling or cleaning tool or work

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)

Abstract

A carrier for a silicon block which is connected fixedly to the carrier and is moved together with the latter for machining by sawing, cleaning or the like has inside it a plurality of continuous longitudinal ducts and also a topside for fastening to a holding device for the carrier and an underside for gluing to the silicon block. The longitudinal ducts have a cross section with a larger cross-sectional region and with a smaller cross-sectional region adjoining the latter, the smaller cross-sectional region emanating from the larger cross-sectional region in the direction of the underside and having a uniform width in a predominant part of its length.

Description

201105455 六、發明說明: 【發明所屬之技術領域】 本發明係關於一種用於矽塊之載體,該矽塊係牢固地連 結於該載體且可與載體一起移動以用於進一步加工,例 如,鋸切成獨立晶圓、清洗等。 【先前技術】 此類載體本身係於先前技術中已知且亦經設計成稱為束 之形式。此等載體之一實例係描述於DE 1() 2〇〇8 〇28 213 A1中。彼文獻中,將矽塊黏合於該載體,且該載體係用於 該矽塊之改良加工,尤其係當隨後如定製般將其鋸切成難 以單獨加工之獨立的薄晶圓時,以避免損壞。此載體係由 甚至於改變的溫度之情況中具有高幾何穩.定性優勢之玻璃 所組成。 【發明内容】 本發明之目的係提供—種上述載體,藉此可避免先前技 術之問題,及特定言之,提供—種扣緊碎塊並固持或操控 該石夕塊以用於進一步加工之具優勢載體。 此目的係藉由具有技術方案!之特徵之载體實現。本發 明之具優勢及較佳實施例係其他技術方案之主要内容且更 詳細地㈣如下。藉由參照專射請範圍之措詞論述正文 之内容。 規定該載體内部具有至少—連續勒通道,較佳複數個 縱向通道,該等通道可彼此平行且等距,特佳沿载體縱向 延伸之方向或垂直於隨後切割晶圓之方向延伸。特佳地, 148170.doc 201105455 該等縱向通道僅於起端及末端敵開且於沿其等長度或載體 内部之其他位置係封閉的。該載體具有可扣緊,例如,螺 合於用於載體之固持裝置之頂側面。此外,該載體具有意 欲,特定言之,藉由本身已知且習知之黏著結合或膠合連 結於石夕塊之下側面。該至少一縱向通道具有包含較大橫截 面區域及與較大横截面區域鄰接之較小橫截面區域之橫截 面。較小橫截面區域係自較大橫截面區域向下側面方向延 伸’即,於對應區域上自較大橫截面區域沿對應方向延 伸。至少於其長度之主要部份中,較小橫截面區域具有均 -的寬度。因λ ’於此情況中,將縱向通道之形狀製成具 有所描述之至少兩橫截面區域。 、於載體内部之此等縱向通道之優勢在於,當將石夕塊鑛切 成獨立晶圓時,一般亦會切入至載體自身中少許,例如, 數毫米°若繼,續㈣直至切割至縱向通道,則可將清洗流 體’特定言之,水導入至該縱向通道中,隨後水會出現在 獨立晶圓間之連接點及所鑛入之載體處並藉此極大地改良 凊洗作用。因此,其意味較大橫截面區域具有可導入或縱 向傳導大量清洗流體之優勢。 由於具有較小橫截面區域之稍小通道,故仍留下足夠的 載體以固持獨立晶圓’進而令獨立晶圓仍黏合定位。 可自較小橫截面區域(其隨後係用作較大橫截面區域間 之連接通道及獨立晶圓間之鋸切空隙)之均一寬度獲得之 優勢係在不考慮鋸入載體或鋸切較小橫截面區域之深度 下,較小橫截面區域之流通橫戴面通常係相同的。最重要 148l70.doc 201105455 的是,此亦適用於具有複數個縱向通道之載體,其中,藉 由省知鋸切方法,沿需稍彎曲之鋸切線於載體之中間部份 鑛切鋸切比側部較小之深度。 於本發明之具優勢實施例中,較小橫截面區域具有垂直 . 於下側面之縱向方向。因此,其會沿最短路徑自較大橫截 面區域延伸至下側面,自該下側面切入載體以切入該較小 橫截面區域。 於本發明之又一實施例中,規定較小橫截面區域於沿其 長度之最大部份中具有均一寬度,特定而言,特佳,平行 的側壁。因此,其會延伸覆蓋例如其長度之至少8〇%或 90%。 雖然就本發明之原理本身而言宜於盡可能大之長度中設 有具有平行側壁之較小橫截面區域,然而,於本發明正文 中將瞭解,宜令較小橫截面區域中指向下側面之末端稱圓 化。尤其宜於下緣及向側壁之過渡處均作圓化。藉此可實 質上防止縱向通道之轉角區域或邊緣區域被經切入或鋸入 之側壁中斷。此外,所鑛過之載體材料之長度不會急劇地 變化,其有利於鋸切。如一可行性實施,可藉由一微弧形 - 令下端圓化,並設有遠大於較小橫截面區域之半寬度之半 ‘徑。因此,經圓化之末端區域不會變得過長且具有可經均 勻切入之優勢。 於本發明之另-實施例中,可規定縱向通道以其較小橫 截面區域之外側下端延伸至距下側面甚短之距離。較佳, 此距離小於20 mm,或甚至小於1〇 mm,例如約5 mm或甚 148170.doc c. 201105455 至僅1 mm至2 mm。 於本發明之再-實施例中,較小橫戴面區域於向較大橫 截面區域之過渡處具有超過其主延伸方向之寬度。於此情 況中可將過渡製成陡«或«化型。此實質上亦係視盡 可能適用於載體中之縱向通道之製造方法而定。 較佳地,較大橫截面區域具有幾何學基本形狀,特佳, 圓形或方形。此等幾何學基本形狀可相對輕易地製得且亦 有利於獲得關於縱向通道中之清洗流體之良好流通特性。 於矩形或方形之情況中,較大橫截面區域之側面應近似平 行或垂直於下側面。 於縱向通道之又一實施例中,規定較小橫截面區域之長 度(較小橫截面區域藉其向下延伸超出較大橫截面區域)係 比較大橫截面區域之高度短。因此,較大橫截面區域可具 有,例如,約8爪01至12 mm之高度,且較小橫截面區域之 長度對應地稍小。可獲得之優勢係,雖然於複數個縱向通 道之情況中,鋸入所有縱向通道,然而,同時,所銀入之 縱向通道至傳輸大部份清洗流體之較大橫截面區域之路徑 不會過長。 於本發明之又一實施例中,規定,除下部較小橫截面區 域外’可自較大橫截面區域延伸出其他橫截面區域。其原 因係,例如,改良製造。較佳地,此類進一步突出橫截面 區域亦係比或甚至遠比較大橫截面區域小^其等會,例 如,向載體之頂側面突出。 縱向通道應沿平坦且伸長的載體之縱向方向,較佳嚴格 148170.doc 201105455 地沿其縱向方向延伸。其等較佳係彼此平行並具有相同的 間隔’然而亦規定越向中間其等間隔越小,係因,甲間部 份更難以自外部將清洗流體導入經鋸切晶圓之間及因此應 於此處自内部導入更多清洗流體。同時,不應彼此過密地 設有過多縱向通道以避免過份影響載體之整體穩定性。可 設有至多10個縱向通道,較佳4至8個。 規定將較大橫截面區域之中心或縱向通道之整個橫截面 之重心配置於載體厚度之約半高度處,,亦改良該載 體之穩定性。較佳地,將载體設計成内部實心,除特佳均 為相同設計之該等縱向通道m能於載體頂側面上設 有用於將載體扣緊至所述固持裝置之伸長至人口處之凹 槽。 此及其他特徵不僅自申請專利範圍,而亦係自本文及附 圖歸納’同時獨立特徵可於其等各自情況中或分別地以子 組。形式於本發明及其他方面之—實施例中實施且可表示 由本文主張保護之具優勢及獨立的專利性方面。將本申請 案細分為獨立部份及巾間標題並不會限制Τ文所作論述之 基本有效性β 【實施方式】 本發月之7F例性實施例係示圖地描述於附圖巾並更 地詮釋如下。 圖1顯不根據本發明之载體11,其係經設計成一伸長平 板’且由虛線表*之錢15係扣緊或牢@地膠合於其下側 面13°載體u具有,例如,約600咖至8〇〇_之 148170.doc 201105455 約200 mm之寬度及約20 mm至30 mm之厚度。其可由陶究 組成,然而,此並不構成本發明原理之中心部份。其亦可 由其他適宜材料組成。 於載體11内部,設有5個縱向通道17a至17e。其等各自 以不變的橫截面通過載體之整個長度。於此情況中,其等 係筆直且彼此平行’且較佳地’但未必,亦具有彼此約相 同之間隔。於載體11之製造中,可藉由擠壓模型或模板之 相應設計藉由擠壓輕易地製造縱向通道17。亦可於頂側面 設有扣緊用之凹槽,例如内切式凹槽,作為用於容納螺紋 元件之一種鳩尾狀導軌或諸如此類者。 於圖2放大圖中所示之最左端之縱向通道17&係由上部較 大橫截面區域20a及下部較小橫截面區域21 a組成。上部較 大橫截面區域20a自身基本上呈圓形且具有約1〇 mm之直 徑。自下垂直於下側面13地加入較小橫截面區域21a,或 令兩區域彼此重疊。於此處可觀察到發生相對明顯之過渡 區域’換而言之’將具有近似直立矩形之較小橫截面區域 21a疊置於圓形較大橫截面2〇a上。較小橫截面區域2u之 寬度可為’例如’約5 mm且其高度為約8 mm至12 mm。下 緣22至下側面13之距離可於數毫米之範圍内,例如,約3 mm至 1〇 mm。 圖1亦顯示如何藉以許多不同形式平行地存在於鋸切裝 置(未更詳細顯示)上之鋸切線24將矽塊1 5切入至載體11 中。此鑛入深度係由虛線鋸切線24,描述。一方面,於此處 可觀察到鋸切線24、24’之定製之微彎曲形狀,於此情況中 148170.doc 201105455 f曲係以3夸大形式描述且可較小。此外,可觀察到由於縱 向通道17a至17e之所有較小橫截面區域2U至21e之長度, 故會切過此等較小橫截面區域整個寬度。因此,在不考慮 切入深度下,理所當然於特定範圍内,向下敞開之寬度或 縱向通道沿鋸切線24,敞開之寬度保持不變。 較小橫截面區域21a之下緣22a恰被切開且因此以類似於 兩橫截面區域間之過渡區域之方式呈現棱角或不連續。可 觀察到當切入底部處之較小橫截面區域21a時,鋸切線24 係如何首先於下緣22a之左手轉角處開始。如圖2所示,若 將此處所不之縱向通道17a近似地配置於載體丨丨中間,則 鋸切線24會約略均勻地切入下緣22a中。於此情況中,應 避免於該轉角處可能發生之陶瓷材料自載體丨丨剝落。 就此原因而言,根據圖3之縱向通道1化之形狀必具有基 本上極類似於圖2之縱向通道17a者之基本形狀。然而,於 此處較大橫截面區域20c至較小下部橫截面區域2ic之過渡 區域及較小下部橫截面區域之下緣22()均被修圓。下緣22c 至較小橫截面區域21 c側壁處之過渡區域亦係經圓化。 於此處亦可觀察到,雖然由於圓化而令有效均勻寬度延 伸超過長度稍短之較小橫截面區域21c,然而,鋸切線24 之切入深度可極大地變化,以使縱向通道1 7c分別以均勾 寬度向下切入。 縱向通道17b之較大橫截面區域20b呈方形。向下延伸之 較小橫截面區域21b呈具有筆直下緣22b之長矩形。於經稍 微修改之方案中,於此處亦可再次令轉角稍圓化。 148170.doc 201105455 當與圖3之縱向通道17c相比時’於圖1中之縱向通道i7d 具有極微彎曲之下緣22d。 就朝下}曰向式較小橫截面區域2 1 e而言,於圖1中最右側 之縱向通道17e差異甚大,其遠比其他較小橫截面區域窄 且遠比圓形較大橫截面區域2〇e之直徑窄。此外,其另具 有寬度與朝下指向式較小橫截面區域約相等但比其稍短之 朝上扎向式上橫截面區域26e。此上橫截面區域26e係用於 說明原則上亦可自較大橫截面區域2 〇 e延伸出其他橫截面 區域。此外,亦可利用該上橫截面區域以,例如,將清洗 流體等以更導向方式導入縱向通道17e中。 於圖1中可觀察到藉由特定壓力導入至縱向通道17之清 洗流體係如何沿自下鑛入之此等縱向通道向下流入鑛切間 隙及進而確實地位於自石夕塊15切成之獨立晶圓之間。可藉 此移除因鑛切而產生之稱為毁液之雜質或如例如de 1〇 2007 058 260 A1所示般於外部沖洗期間幾乎不可達到或難 以達到之自該區域以高精度沖出該雜質。 【圖式簡單說明】 、圖1顯示本發明之具有各包含不同橫截面之複數個縱向 通道之載體之截面視圖,及 圖2及3顯示標示有鋸切線路徑之高度放大之不同 截面。 w 【主要元件符號說明】 11 載體 13 下側面 148170.doc 201105455 15 矽塊 17a 縱向通道 17b 縱向通道 17c _縱向· ·通道 17d 縱向通道 17e 縱向通道 20a 較大橫截面區域 20c 較大橫截面區域 21a 較小橫截面區域 21c 較小橫截面區域 22a 下緣 22c 下緣 24 鋸切線 24, 鋸切線 26e 上部橫截面區域 148170.doc -11 -201105455 VI. Description of the Invention: [Technical Field] The present invention relates to a carrier for a block that is firmly attached to the carrier and movable with the carrier for further processing, for example, a saw Cut into individual wafers, cleaning, etc. [Prior Art] Such vectors are themselves known in the prior art and are also designed to be in the form of a bundle. An example of such a carrier is described in DE 1() 2 〇〇 8 〇 28 213 A1. In the literature, a crucible is bonded to the carrier, and the carrier is used for the improved processing of the crucible, especially when it is subsequently sawed into a separate thin wafer that is difficult to process separately. Avoid damage. This carrier consists of a glass having a high geometric stability advantage even in the case of a changed temperature. SUMMARY OF THE INVENTION It is an object of the present invention to provide such a carrier, thereby avoiding the problems of the prior art and, in particular, providing a fastening block and holding or manipulating the stone block for further processing. Advantage carrier. This object is achieved by a carrier having the features of the technical solution! Advantages and preferred embodiments of the present invention are the main content of other technical solutions and are more detailed (iv) as follows. The content of the text is discussed by reference to the wording of the scope of the special shot. It is provided that the interior of the carrier has at least a continuous channel, preferably a plurality of longitudinal channels, which may be parallel and equidistant from each other, particularly preferably extending in the longitudinal direction of the carrier or perpendicular to the direction in which the wafer is subsequently diced. Particularly preferably, 148170.doc 201105455 The longitudinal passages are only open at the ends and ends and are closed along their equal length or other locations inside the carrier. The carrier has a fastening, for example, screwed onto the top side of the holding means for the carrier. Moreover, the carrier has the intention, in particular, to be attached to the underside of the stone block by adhesive bonding or gluing known per se and conventionally known. The at least one longitudinal channel has a cross section that includes a larger cross-sectional area and a smaller cross-sectional area that abuts the larger cross-sectional area. The smaller cross-sectional area extends from the larger cross-sectional area to the lower side', i.e., extending from the larger cross-sectional area in the corresponding direction over the corresponding area. At least a major portion of its length, the smaller cross-sectional area has a width of -. Since λ' is in this case, the shape of the longitudinal passage is made into at least two cross-sectional areas as described. The advantage of such longitudinal passages in the interior of the carrier is that when the Shixi block ore is cut into individual wafers, it is generally cut into the carrier itself a little, for example, several millimeters, if continued, (four) until cutting to the longitudinal direction. In the channel, the cleaning fluid can be specifically introduced into the longitudinal channel, and then the water will appear at the connection point between the individual wafers and the carrier into which it is implanted and thereby greatly improve the rinsing action. Therefore, it means that the larger cross-sectional area has the advantage of being able to introduce or longitudinally conduct a large amount of cleaning fluid. Due to the slightly smaller vias having a smaller cross-sectional area, sufficient carrier remains to hold the individual wafers, thereby allowing the individual wafers to remain bonded. The advantage of being able to obtain a uniform width from a smaller cross-sectional area (which is then used as a connecting channel between larger cross-sectional areas and a sawing gap between individual wafers) is that the saw-in carrier or sawing is not considered At the depth of the cross-sectional area, the flow cross-surface of the smaller cross-sectional area is generally the same. The most important one is 148l70.doc 201105455, which is also applicable to a carrier having a plurality of longitudinal channels, wherein the sawing side is cut along the middle portion of the carrier by a sawing method which is slightly curved by a known sawing method. The smaller depth. In a preferred embodiment of the invention, the smaller cross-sectional area has a vertical direction to the longitudinal direction of the lower side. Therefore, it extends from the larger cross-sectional area to the lower side along the shortest path from which the carrier is cut to cut into the smaller cross-sectional area. In yet another embodiment of the invention, the smaller cross-sectional area is defined to have a uniform width, in particular, a particularly good, parallel side wall, along the largest portion of its length. Thus, it will extend to cover, for example, at least 8% or 90% of its length. Although it is preferred that the principle of the invention itself be provided with a smaller cross-sectional area having parallel side walls in as large a length as possible, it will be appreciated in the context of the present invention that the lower cross-sectional area should be directed to the lower side. The end is called rounding. It is especially preferred to round the transition between the lower edge and the side wall. Thereby, it is possible to substantially prevent the corner area or the edge area of the longitudinal passage from being interrupted by the cut-in or saw-in side wall. In addition, the length of the carrier material that has been mined does not change drastically, which is advantageous for sawing. As a feasible implementation, the lower end can be rounded by a micro-arc-shape and provided with a half-width that is much larger than the half-width of the smaller cross-sectional area. Therefore, the rounded end region does not become too long and has the advantage of being evenly cut. In a further embodiment of the invention, it may be provided that the longitudinal passage extends from the outer lower end of the smaller cross-sectional area to a very short distance from the lower side. Preferably, the distance is less than 20 mm, or even less than 1 mm, such as about 5 mm or 148170.doc c. 201105455 to only 1 mm to 2 mm. In a further embodiment of the invention, the smaller transverse surface region has a width beyond the direction of its main extension at the transition to the larger cross-sectional area. In this case, the transition can be made steep or «chemical. This is also essentially dependent on the method of manufacture that would be suitable for the longitudinal channels in the carrier. Preferably, the larger cross-sectional area has a geometric basic shape, particularly good, round or square. These geometric basic shapes can be made relatively easily and are also advantageous for obtaining good flow characteristics with respect to the cleaning fluid in the longitudinal channels. In the case of a rectangle or square, the sides of the larger cross-sectional area should be approximately parallel or perpendicular to the underside. In yet another embodiment of the longitudinal channel, the length of the smaller cross-sectional area (by which the smaller cross-sectional area extends beyond the larger cross-sectional area) is shorter than the height of the larger cross-sectional area. Thus, a larger cross-sectional area may have, for example, a height of about 8 jaws from 01 to 12 mm, and the length of the smaller cross-sectional area is correspondingly slightly smaller. The advantage available is that although in the case of a plurality of longitudinal channels, all longitudinal channels are sawed, however, at the same time, the path from the longitudinal passage of silver into the larger cross-sectional area of the majority of the cleaning fluid does not pass. long. In yet another embodiment of the invention, it is provided that other cross-sectional areas may extend from the larger cross-sectional area except for the smaller cross-sectional area of the lower portion. The reason is, for example, improved manufacturing. Preferably, such further protruding cross-sectional areas are also smaller or even smaller than the larger cross-sectional areas, for example, protruding toward the top side of the carrier. The longitudinal passages should extend in the longitudinal direction of the flat and elongated carrier, preferably in the longitudinal direction thereof, preferably 148170.doc 201105455. Preferably, they are parallel to each other and have the same spacing. However, the smaller the interval is, the smaller the interval is. The reason is that it is more difficult to introduce the cleaning fluid from the outside into the sawed wafer from the outside. Import more cleaning fluid from the inside here. At the same time, too many longitudinal channels should not be provided too densely to avoid excessively affecting the overall stability of the carrier. It can be provided with up to 10 longitudinal channels, preferably 4 to 8. It is provided that the center of gravity of the entire cross section of the larger cross-sectional area or the center of the longitudinal passage is disposed at about half the height of the carrier, and the stability of the carrier is also improved. Preferably, the carrier is designed to be internally solid, and the longitudinal channels m, which are preferably of the same design, can be provided on the top side of the carrier for fastening the carrier to the extension of the holding device to the population. groove. This and other features are not only from the scope of the patent application, but also from the text and the accompanying drawings, while the independent features may be sub-grouped in their respective cases or separately. The forms are implemented in the present invention and other aspects - and may represent advantageous and independent patent aspects as claimed herein. Subdividing the present application into separate parts and headings does not limit the basic validity of the discussion of the text. [Embodiment] The 7F exemplary embodiment of the present month is illustrated in the drawing and is more The interpretation is as follows. Figure 1 shows a carrier 11 according to the invention, which is designed as an elongate plate' and is fastened or firmly glued to its lower side by a dashed line* of the carrier 13 having, for example, about 600 Coffee to 8 〇〇 _ 148170.doc 201105455 A width of about 200 mm and a thickness of about 20 mm to 30 mm. It may be composed of ceramics, however, this does not form a central part of the principles of the invention. It can also be composed of other suitable materials. Inside the carrier 11, there are provided five longitudinal passages 17a to 17e. They each pass through the entire length of the carrier in a constant cross section. In this case, they are straight and parallel to each other 'and preferably' but not necessarily, and have approximately the same interval from each other. In the manufacture of the carrier 11, the longitudinal passages 17 can be easily fabricated by extrusion by means of a corresponding design of the extrusion die or stencil. It is also possible to provide a groove for fastening on the top side, such as an inscribed groove, as a dovetail guide for accommodating a threaded member or the like. The leftmost longitudinal channel 17& shown in the enlarged view of Fig. 2 is composed of an upper larger cross-sectional area 20a and a lower smaller cross-sectional area 21a. The upper larger cross-sectional area 20a itself is substantially circular and has a diameter of about 1 mm. The smaller cross-sectional area 21a is added from the lower side to the lower side 13 or the two areas are overlapped with each other. It can be observed here that a relatively pronounced transition zone is observed. In other words, a smaller cross-sectional area 21a having an approximately upright rectangle is superposed on the circular larger cross section 2〇a. The smaller cross-sectional area 2u may have a width of 'e.g., about 5 mm and a height of about 8 mm to 12 mm. The distance from the lower edge 22 to the lower side 13 may be in the range of a few millimeters, for example, about 3 mm to 1 mm. Figure 1 also shows how the jaws 15 are cut into the carrier 11 by means of sawing lines 24 which are present in parallel in many different forms on a sawing device (not shown in more detail). This mine entry depth is described by a dashed saw line 24. On the one hand, a custom microbend shape of the sawing lines 24, 24' can be observed here, in which case the 148170.doc 201105455 f curve is described in a 3 exaggerated form and can be smaller. Furthermore, it can be observed that the entire width of the smaller cross-sectional areas is cut due to the length of all of the smaller cross-sectional areas 2U to 21e of the longitudinal passages 17a to 17e. Therefore, without considering the plunging depth, it is a matter of course that within a certain range, the width of the downward opening or the longitudinal passage along the sawing line 24, the width of the opening remains unchanged. The lower edge 22a of the smaller cross-sectional area 21a is just cut and thus presents an edge or discontinuity in a manner similar to the transition between the two cross-sectional areas. It can be observed how the sawing line 24 begins first at the left hand corner of the lower edge 22a when cutting into the smaller cross-sectional area 21a at the bottom. As shown in Fig. 2, if the longitudinal passage 17a which is not here is disposed approximately in the middle of the carrier, the sawing line 24 is cut into the lower edge 22a approximately uniformly. In this case, the ceramic material that may occur at the corners should be prevented from peeling off from the carrier. For this reason, the shape of the longitudinal passage according to Fig. 3 must have a basic shape substantially similar to that of the longitudinal passage 17a of Fig. 2. However, here the transition region of the larger cross-sectional area 20c to the smaller lower cross-sectional area 2ic and the lower lower cross-sectional area lower edge 22() are rounded. The transition region from the lower edge 22c to the side wall of the smaller cross-sectional area 21c is also rounded. It can also be observed here that although the effective uniform width extends beyond the smaller cross-sectional area 21c of a shorter length due to the rounding, the depth of cut of the sawing line 24 can be greatly varied so that the longitudinal passages 17c are respectively Cut in with the width of the hook. The larger cross-sectional area 20b of the longitudinal passage 17b is square. The smaller cross-sectional area 21b extending downward is a long rectangle having a straight lower edge 22b. In the slightly modified scheme, the corners can be rounded again here. 148170.doc 201105455 When compared to the longitudinal passage 17c of Figure 3, the longitudinal passage i7d in Figure 1 has a very slightly curved lower edge 22d. In the case of a downwardly directed smaller cross-sectional area 2 1 e , the rightmost longitudinal channel 17e in Figure 1 differs greatly, which is much narrower than other smaller cross-sectional areas and much larger than the circular larger cross section. The area 2〇e has a narrow diameter. In addition, it has an upwardly facing upper cross-sectional area 26e having a width approximately equal to but slightly shorter than the downwardly directed smaller cross-sectional area. This upper cross-sectional area 26e is used to illustrate that in principle other cross-sectional areas can also be extended from the larger cross-sectional area 2 〇 e. Furthermore, the upper cross-sectional area can also be utilized to, for example, introduce a cleaning fluid or the like into the longitudinal passage 17e in a more directed manner. It can be seen in Figure 1 how the purge flow system introduced into the longitudinal passage 17 by a specific pressure flows downwardly into the ore-cutting gap along the longitudinal passages from the lower mine and is thus located at the self-cutting block 15 Between separate wafers. It is thereby possible to remove impurities known as septics due to ore cutting or to be almost unreachable or difficult to reach during external rinsing as indicated by, for example, de 1〇2007 058 260 A1, which is rushed out of the region with high precision Impurities. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 shows a cross-sectional view of a carrier of the present invention having a plurality of longitudinal channels each having a different cross section, and Figs. 2 and 3 show different height sections of the path of the sawing line. w [Main component symbol description] 11 Carrier 13 Lower side 148170.doc 201105455 15 Block 17a Longitudinal channel 17b Longitudinal channel 17c_Longitudinal · Channel 17d Longitudinal channel 17e Longitudinal channel 20a Larger cross-sectional area 20c Larger cross-sectional area 21a Smaller cross-sectional area 21c smaller cross-sectional area 22a lower edge 22c lower edge 24 sawing line 24, sawing line 26e upper cross-sectional area 148170.doc -11 -

Claims (1)

201105455 七、申請專利範圍: 1. 一種用於矽塊之載體’該矽塊係牢固地連結於該載體且 係與載體一起移動以用於鋸切之機械加工、清洗及諸如 此類者,該載體内部具有至少一連續的縱向通道及用於 將該載體固定於固持裝置之頂側面及用於連結該矽塊之 下側面,δ亥縱向通道具有包含一較大橫截面區域及與較 大橫截面區域鄰接之一較小橫截面區域之橫截面,該較 小橫截面區域係自較大橫截面區域向下側面之方向延伸 且至少於其長度之主要部份中具有均勻寬度。 2·如β青求項}之載體,其中該較小橫截面區域具有垂直於 下側面之縱向方向。 3. 如响求項丨之載體,其中該較小橫截面區域於其最大部 份長度上具有均勻寬度。 4. 如明求項3之載體,其中該較小橫截面區域具有平行的 側壁。 5. 如。月求項i之載體’其中該較小橫截面區域中指向該下 側面之末端係稍經圓化。 6·如明求項5之載體’其中該較小橫截面區域中指向該下 側面之末端係經由遠比該較小橫截面區域之 半徑圓化。 之載體’其中该縱向通道延伸至恰不觸及該 載體之該下側面。 士 °月求項7之載體,其中該縱向通道延伸至離該載體之 下側面少於10 mm處。 148170.doc 201105455 9. 10, 11. 12. 13. 14. 15. 16. 17. 18. 向該較大 主要部份 2 1之載體’其中該較小橫截面區域於 域之過渡區域處具有延 产 之均勻寬度。 山丹仗度 面區域至少呈近圓 5亥方形之邊係近似 如請求項1之載體,其中該較大橫截 形或方形,較佳地,於方形情況中, 平行或垂直於該下側面。 如請求項1之載體,其中向下延 之兮鲂I # # D 亥車乂大橫截面區域 之較小橫截面區域之長度係比 度短。 較大検截面區域之高 如請求項1之載體,其中, 冰★ 戰具中除该下部較小橫截面區域 卜,亦可自該較大橫截面區域延伸 t x 另一橫截面區域。 Μ求項12之載體’其中,&該下部較小橫截面區域 :,亦可自該較大橫截面區域延伸出作為另一橫截面區 域之一較小橫截面區域。 如請求項13之載體,其特徵在於該較小橫截面區域係向 該頂側面之方向突出。 汝π求項1之載體,其中該等縱向通道係沿該平坦且伸 長之載體之縱向方向延伸且僅於兩端與外部連通。 如請求項15之載體,其中該等縱向通道係沿該載體之縱 向方向或垂直於隨後切割晶圓地延伸。 如請求項15之載體,其中設有丨至10個彼此平行之縱向 通道。 如請求項15之載體’其中除該等内部通道外,該載體係 經設計成内部實心。 148170.doc201105455 VII. Scope of application: 1. A carrier for a sputum block that is firmly attached to the carrier and that moves with the carrier for machining, cleaning, and the like of the saw, the interior of the carrier Having at least one continuous longitudinal passageway for securing the carrier to the top side of the retaining device and for joining the underside of the retaining block, the δHlong longitudinal passageway has a larger cross-sectional area and a larger cross-sectional area Adjacent to a cross section of one of the smaller cross-sectional areas extending from the larger cross-sectional area to the lower side and having a uniform width in at least a major portion of its length. 2. A carrier such as a β-green term, wherein the smaller cross-sectional area has a longitudinal direction perpendicular to the lower side. 3. The carrier of the response, wherein the smaller cross-sectional area has a uniform width over its largest portion length. 4. The carrier of claim 3, wherein the smaller cross-sectional area has parallel sidewalls. 5. For example. The carrier of the month i is the case where the end of the smaller cross-sectional area pointing to the lower side is slightly rounded. 6. The carrier of claim 5 wherein the end of the smaller cross-sectional area directed toward the lower side is rounded by a radius that is much greater than the smaller cross-sectional area. The carrier 'where the longitudinal channel extends to just touch the underside of the carrier. The carrier of claim 7, wherein the longitudinal passage extends to less than 10 mm from the underside of the carrier. 148170.doc 201105455 9. 10, 11. 12. 13. 14. 15. 16. 17. 18. to the larger main part 2 1 carrier 'where the smaller cross-sectional area has at the transition zone of the domain The uniform width of the yield. The side of the Shandan 仗 degree surface is at least approximately 5 亥 square, which is approximately the carrier of claim 1, wherein the larger cross section or square shape, preferably, in the square case, parallel or perpendicular to the lower side . The carrier of claim 1, wherein the length of the smaller cross-sectional area of the large cross-sectional area of the downwardly extending #I # # D 亥 乂 is short. The larger the cross-sectional area is as high as the carrier of claim 1, wherein the ice ★ warfare may extend from the larger cross-sectional area t x another cross-sectional area except the lower cross-sectional area of the lower portion. The carrier of the item 12, wherein & the lower cross-sectional area of the lower portion, may also extend from the larger cross-sectional area as a smaller cross-sectional area of the other cross-sectional area. The carrier of claim 13, characterized in that the smaller cross-sectional area protrudes in the direction of the top side. The carrier of claim 1, wherein the longitudinal channels extend in a longitudinal direction of the flat and elongated carrier and communicate with the outside only at both ends. The carrier of claim 15 wherein the longitudinal channels extend in a longitudinal direction of the carrier or perpendicular to the subsequently diced wafer. The carrier of claim 15 wherein there are ten to ten longitudinal channels that are parallel to each other. The carrier of claim 15 wherein the carrier is designed to be internally solid except for the internal channels. 148170.doc
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* Cited by examiner, † Cited by third party
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DE102009023122A1 (en) 2009-05-22 2010-11-25 Gebr. Schmid Gmbh & Co. Support for a silicon block and manufacturing method of such a carrier
DE102009035343A1 (en) 2009-07-23 2011-01-27 Gebr. Schmid Gmbh & Co. Method and device for cleaning substrates on a support
DE102009035342A1 (en) 2009-07-23 2011-01-27 Gebr. Schmid Gmbh & Co. Device for cleaning substrates at carrier, has flexible and/or elastic cleaning device completely filling longitudinal channel in carrier and flexibly resting against walls of longitudinal channel
DE102009035341A1 (en) 2009-07-23 2011-01-27 Gebr. Schmid Gmbh & Co. Device for cleaning substrates on a support
DE102010050897B4 (en) * 2010-07-09 2014-05-22 Interpane Entwicklungs-Und Beratungsgesellschaft Mbh Carrier device and method for cutting a block of material attached to the carrier device
DE102010031364A1 (en) 2010-07-15 2012-01-19 Gebr. Schmid Gmbh & Co. Support for a silicon block, carrier arrangement with such a carrier and method for producing such a carrier arrangement
EP2711151A1 (en) 2012-09-24 2014-03-26 Meyer Burger AG Method of making wafers

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4457114A (en) * 1982-09-30 1984-07-03 Magnetic Peripherals Inc. Workpiece carrier
JPH0919921A (en) * 1995-07-07 1997-01-21 Tokyo Seimitsu Co Ltd Wire saw
JPH09207126A (en) * 1996-01-31 1997-08-12 Nippei Toyama Corp Work supporting apparatus for wire saw, method for cleaning in and the wire saw
DE29924242U1 (en) * 1999-06-18 2002-07-04 Schwäbische Werkzeugmaschinen GmbH, 78713 Schramberg Machine tool with metal components made of metal foam
JP2004106360A (en) * 2002-09-19 2004-04-08 Komatsu Electronic Metals Co Ltd Slit wafer supporting component and wafer cleaning apparatus
JP2007118354A (en) * 2005-10-27 2007-05-17 Kyocera Corp Jig for supporting ingot
DE102007058260A1 (en) 2007-11-27 2009-05-28 Gebr. Schmid Gmbh & Co. Cut wafer block cleaning method for use during manufacture of solar cell, involves turning lateral edges of wafer block and/or wafer about vertical axis, so that cleaning liquid is supplied between wafers
DE102008028213A1 (en) 2008-06-06 2009-12-10 Gebr. Schmid Gmbh & Co. Method for attaching a silicon block to a support therefor and corresponding arrangement

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