201104880 . 六、發明說明： 【發明所屬之技術領域】 本發明係有關太陽能電池結構’尤其是該太陽能電池結構中的 後透明導電氧化(Back TC0)層或介面層具有一粗糙上表面，有助 於光的散射並可增加光的吸收率。 【先前技術】 一般薄膜太陽能電池具有一基板、一背電極、一主要吸收 φ層以及一前電極。目前產業界使用之前電極材料通常具有表面201104880 . VI. Description of the Invention: [Technical Field] The present invention relates to a solar cell structure, in particular, a back transparent conductive oxide (Back TC0) layer or interface layer in the solar cell structure having a rough upper surface, which is helpful Scattering of light and increasing the absorption of light. [Prior Art] A general thin film solar cell has a substrate, a back electrode, a main absorption φ layer, and a front electrode. Electrode materials usually have a surface before use in the industry.
突起結構，並配合高反射之金屬背電極，增加光在主要吸收層 中之光補獲路徑。 S 參閱弟一圖’習知太陽能電池結構示意圖，其中該太陽能 電池1係由下而上包括一基板50、一第一反射金屬層55、一 透明導電層60、一第二反射金屬層65、一半導體薄膜層7〇 以及一前電極75，其中該第一反射金屬層55以及第二反射金 屬層65皆具有不平滑上表面，而該第一反射金屬層55、透明 • 導電層60以及第二反射金屬層65可共組成一背電極。 一光線L射入s亥太陽能電池1後可經由該第一反射金屬層 55或弟一反射金屬層65將光線L都反射至該半導體薄膜層 70， 、曰 以提升該半導體薄膜層70的光能轉換率。 參閱第二圖，習知太陽能電池結構之另一示意圖，其中該 太陽能電池2係由下而上包括一背基板98、一反應單元 (active body)90、—陶金屬層（cermet layer)84、—透明導 電薄膜82以及一透明基板8〇，其中該反應單元9〇包含一第 一吸收單元92、一穿透接面94以及一第二吸收單元96❶該太 201104880 利用第及收單元92與第二吸收單元96串聯堆 且Q9二」接面。94為陶金材料（Cermet)來形成第一吸收單 兀”-吸收單凡96之間的光路徑，以增加光能轉換率。 【發明内容】 明之主要目的在提供一種太陽能電池結構，該太陽能 麻…、下而上包括一基板、—前透明導電氧化伽价τ⑼ 二主吸收層、—背透明導電氧化_ack_以及一金屬 賴:，其中該背透明導電氧化層具有一粗链上表面。 ί明之目的在提供—種太陽能電池結構，該太陽能 糸下而上包括—基板、—前透明導電氧化層、至少-第 一及收層、至少-介面層、至少_第二吸收層、—背透明導電 氧化層以及-金屬難層，其巾該介面層具有—粗链上表面。 在本毛明的太陽能電池結構中，由於背透明導電氧化層或 ;ι面層上具有祕上表面，該祕上表面有祕光的散射並 可增加光的吸鮮’提較馳電池效率。 【實施方式】 以下配合圖式及兀件符麟本發明之實施方式做更詳細 的說明，俾使熟習該項技藝者在研讀本說明書後能據以實施。 參閱第二®，本發明第—實施例之太陽能電池結構示意 圖，並參閱第四圖，本發明之粗财面示意圖，該太陽能電池 3係包括-基板10、-前透明導電氧化層15、一主吸收層2〇、 一月透明導電氧化層25以及-金屬薄膜層35，而該基板1〇、 前透明導電氧化層15、主吸收層2G、背透明導電氧化層25 係依序由下往上堆4 ’其中对翻料氧化層25具有一粗 201104880 、糖上表面30 ’該粗糙上表面3G可經由乾飯刻（忉池⑽處 理來形成，絲紅表面3G具有複數個凸起施在該等凸 起30a的最高點之間皆具有一間距d，該等凸起_中兩相鄰 f起30a之間的最低點與該等凸起施中兩相鄰凸起的最 高點相連線形成-夾角Θ，其中該間距d42〇〇nm以下以及該 夹角θ為30度〜150度，而該金屬薄膜層35則堆疊於該粗縫上 表面30上。 該主吸收層係包括至少—吸收層，而該至少—吸收層（圖 φ中未顯示）可為串疊型（Tandem)太陽能電池、三接面 (Triple-junction)太陽能電池以及多接面（Multi_juncti〇n) 太陽能電池的其中之一。 該前透明導電氧化層15以及背透明導電氧化層25可為氧 化鋅基(ZnO-based)之材料，該基板可為玻璃基板，該乾蝕刻 處理可為一氫電漿(¾ piasma)處理，以及該金屬薄膜層35可 為銀。 參閱第五圖，本發明第二實施例之太陽能電池結構示意 0 圖，該太陽能電池9係包括一基板1〇、一前透明導電氧化層 15、至少一第一吸收層（如圖中元件符號22)、至少一介面層 (如圖中元件符號23)、至少一第二吸收層（如圖中元件符號 24)、一背透明導電氧化層25以及一金屬薄膜層35。 要注意的事，第一吸收層、介面層以及第二吸收層皆可為 一層或一層以上，然而在本實施例以及第五圖中為了方便說明 僅列出一層第一吸收層、一層介面層以及一層第二吸收層。 該基板10、前透明導電氧化層15、第一吸收層22以及介 面層23係依序由下往上堆疊，其中該介面層23具有一粗链上 表面32，該粗糖上表面32可經由乾餘刻（dry ething)處理來 201104880 =起3糙ft %具有複數個凸起（圖中未顯示），抑 專凸起的最尚點之間皆具有一間距（圖中未 ^ 兩=凸起之間的最低點與該等凸起中兩相鄰凸起的起令 及該央軸㈣度，細錄絲^^下: 上堆疊該第二吸收層24、背透明導 Z依序由下而 層35。 4叫電梳層25以及金屬薄膜 純導電氧化層15以及背透明導電氧化層25可為氧 ^匕鋅fZn〇-based)之材料，該基板可為破璃基板該乾餘刻 處理為-虱電漿(H2piasma)處理，以及該金·膜層35 銀。 该第-吸收層22以及第二吸收層24皆可為卜Ιπ_νι族化合 物、非晶矽(a-Si)、非晶矽鍺(SiGe)4結晶矽(uc_Si)，該 i-iii-vi族化合物包括鋼銦鎵g(CIGS)、銅銦硒(CGS)、銅鎵 石西（CIS)以及銀铜錄砸(AIGS)吸收層的其中之一。 在本發明的太陽能電池結構中，係以在背透明導電氧化層 或介面層上形成一粗糙上表面，該粗糙上表面有助於光的散射 並可增加光的吸收率，提升太陽能電池效率。 201104880 . 【圖式簡單說明】 第一圖為習知太陽能電池結構示意圖。 第'一圖為習知太陽能電池結構之另一示意圖。 第三圖為本發明第一實施例之太陽能電池結構示意圖。 第四圖為本發明之粗縫表面示意圖。 第五圖為本發明第二實施例之太陽能電池結構示意圖。 【主要元件符號說明】 1太陽能電池 籲2太陽能電池 3太陽能電池 9太陽能電池 10基板 15前透明導電氧化層 20主吸收層 22第一吸收層 23介面層 • 24第二吸收層 25背透明導電氧化層 30粗糙上表面 30a凸起 32粗糙;上表面 35金屬薄臈層 50基板 55第—反射金屬層 60透明導電層 201104880 65第二反射金屬層 70半導體薄膜層 75前電極 80透明基板 82透明導電薄膜 84陶金屬層 86第一接線 90反應單元 92第一吸收單元 94穿透接面 96第二吸收單元 98背基板 99第二接線 L光線 L1光線 d間距 θ角度The raised structure, coupled with a highly reflective metal back electrode, increases the light-recovering path of light in the primary absorber layer. S. Referring to FIG. 1 is a schematic view of a conventional solar cell structure, wherein the solar cell 1 includes a substrate 50, a first reflective metal layer 55, a transparent conductive layer 60, and a second reflective metal layer 65 from bottom to top. a semiconductor thin film layer 7A and a front electrode 75, wherein the first reflective metal layer 55 and the second reflective metal layer 65 both have a non-smooth upper surface, and the first reflective metal layer 55, the transparent conductive layer 60, and the first The two reflective metal layers 65 may collectively form a back electrode. After the light L is incident on the solar cell 1 , the light L can be reflected to the semiconductor film layer 70 via the first reflective metal layer 55 or the reflective metal layer 65 to enhance the light of the semiconductor thin film layer 70. Can convert rate. Referring to the second figure, another schematic diagram of a conventional solar cell structure, wherein the solar cell 2 includes a back substrate 98, an active body 90, and a cermet layer 84 from bottom to top. a transparent conductive film 82 and a transparent substrate 8A, wherein the reaction unit 9A includes a first absorption unit 92, a penetration surface 94, and a second absorption unit 96. The 201104880 utilizes the first and second receiving units 92 and The two absorption units 96 are connected in series and the Q9 is connected. 94 is a ceramic material (Cermet) to form a light path between the first absorption unit and the absorption unit 96 to increase the light energy conversion rate. SUMMARY OF THE INVENTION The main purpose of the invention is to provide a solar cell structure, the solar energy The bottom surface includes a substrate, a front transparent conductive oxide gamma τ (9) two main absorption layer, a back transparent conductive oxide _ack_, and a metal ray: wherein the back transparent conductive oxide layer has a thick upper surface The purpose of the invention is to provide a solar cell structure comprising: a substrate, a front transparent conductive oxide layer, at least a first and a first layer, a at least an interface layer, at least a second absorption layer, a back transparent conductive oxide layer and a metal hard layer, wherein the interface layer has a thick upper surface. In the present solar cell structure, the back transparent conductive oxide layer or the top layer has a secret surface. The secret surface has the scattering of secret light and can increase the light absorption of the light to improve the battery efficiency. [Embodiment] The following is a more detailed description of the embodiment of the present invention with the drawings and the components of the present invention.熟 熟 该项 该项 该项 该项 该项 该项 该项 该项 该项 该项 该项 该项 该项 该项 该项 该项 该项 该项 该项The battery 3 includes a substrate 10, a front transparent conductive oxide layer 15, a main absorption layer 2, a January transparent conductive oxide layer 25, and a metal thin film layer 35, and the substrate 1 and the front transparent conductive oxide layer 15, The main absorption layer 2G and the back transparent conductive oxide layer 25 are sequentially stacked from bottom to top 4', wherein the reverse oxide layer 25 has a thick 201104880 and a sugar upper surface 30'. The rough upper surface 3G can be dried (Dianchi) (10) processing to form, the silk red surface 3G having a plurality of protrusions applied between the highest points of the protrusions 30a has a spacing d, and the lowest point between the two adjacent f's 30a of the protrusions The highest point connecting lines of the two adjacent protrusions of the protrusions form an angle Θ, wherein the spacing d42〇〇nm and the angle θ is 30 degrees to 150 degrees, and the metal film layer 35 is stacked On the rough upper surface 30. The main absorbent layer includes An absorbing layer, and the at least absorbing layer (not shown in FIG. φ) may be a Tandem solar cell, a triple-junction solar cell, and a multi-junction solar cell. The front transparent conductive oxide layer 15 and the back transparent conductive oxide layer 25 may be a ZnO-based material, the substrate may be a glass substrate, and the dry etching process may be a hydrogen plasma (3⁄4). The piasma treatment, and the metal thin film layer 35 may be silver. Referring to the fifth embodiment, the solar cell structure of the second embodiment of the present invention is shown in FIG. 0, the solar cell 9 includes a substrate 1 and a front transparent conductive oxide layer. 15. At least one first absorbing layer (e.g., component symbol 22 in the figure), at least one interface layer (e.g., component symbol 23 in the figure), at least one second absorbing layer (e.g., component symbol 24 in the figure), and a back transparent conductive oxidation Layer 25 and a metal film layer 35. It should be noted that the first absorption layer, the interface layer and the second absorption layer may each be one layer or more. However, in the present embodiment and the fifth figure, only one layer of the first absorption layer and one layer of the interface layer are listed for convenience of description. And a second absorption layer. The substrate 10, the front transparent conductive oxide layer 15, the first absorbing layer 22 and the interface layer 23 are sequentially stacked from bottom to top, wherein the interface layer 23 has a thick chain upper surface 32, and the raw sugar upper surface 32 can be dried. Dry ething processing to 201104880 = 3 rough ft % has a plurality of bulges (not shown), and there is a spacing between the most prominent points of the special bulge (not ^ 2 = bulge in the figure) The lowest point between the two points and the two adjacent protrusions of the protrusions and the central axis (four degrees), the fine recording wire ^^: the upper second absorption layer 24, the back transparent guide Z are sequentially arranged The layer 35. 4 is called the electric comb layer 25 and the metal film pure conductive oxide layer 15 and the back transparent conductive oxide layer 25 may be a material of oxy-zinc-zinc-based, the substrate may be a glass substrate. The treatment was treated with H2piasma, and the gold film layer 35 silver. The first absorption layer 22 and the second absorption layer 24 may each be a di-ππν group compound, an amorphous germanium (a-Si), an amorphous germanium (SiGe) 4 crystal germanium (uc_Si), the i-iii-vi family. The compound includes one of steel indium gallium chloride (CIGS), copper indium selenide (CGS), copper gallium sulphate (CIS), and silver-copper-recorded (AIGS) absorber layers. In the solar cell structure of the present invention, a rough upper surface is formed on the back transparent conductive oxide layer or the interface layer, the rough upper surface contributes to light scattering and increases light absorption rate, and improves solar cell efficiency. 201104880 . [Simple description of the diagram] The first figure is a schematic diagram of the structure of a conventional solar cell. The first figure is another schematic diagram of a conventional solar cell structure. The third figure is a schematic structural view of a solar cell according to a first embodiment of the present invention. The fourth figure is a schematic view of the rough surface of the present invention. Figure 5 is a schematic view showing the structure of a solar cell according to a second embodiment of the present invention. [Main component symbol description] 1 solar cell 2 solar cell 3 solar cell 9 solar cell 10 substrate 15 front transparent conductive oxide layer 20 main absorption layer 22 first absorption layer 23 interface layer 24 24 second absorption layer 25 back transparent conductive oxidation Layer 30 rough upper surface 30a protrusion 32 rough; upper surface 35 metal thin layer 50 substrate 55 first - reflective metal layer 60 transparent conductive layer 201104880 65 second reflective metal layer 70 semiconductor thin film layer 75 front electrode 80 transparent substrate 82 transparent conductive Film 84 ceramic layer 86 first wiring 90 reaction unit 92 first absorption unit 94 penetration junction 96 second absorption unit 98 back substrate 99 second wiring L light L1 light d spacing θ angle