201103693 六、發明說明： 【發明所屬之技術領域】 本發明係有關於一種精密研磨工具及其製造方法，尤 指一種具有較佳研磨特性之研磨工具及其製造方法。 【先前技術】 隨著半導體製程的發展，業已大量地應用在半導體製 造的流程中，舉例來說：由於晶圓之表面必須平滑以利後 • 續之製程的進行，因此，在半導體產業的晶圓製程中，研 磨工具係廣泛用於化學機械研磨製程（Chemical Mechanical Polishing, CMP)，以針對晶圓進行研磨及拋 光作業。在化學機械研磨製程的過程中，晶圓係藉由圓盤 封蓋且下壓在旋轉的拋光墊上，並且注入酸性或鹼性之研 磨液於該拋光墊上，藉以進行拋光及研磨之作業。 在化學機械研磨製程中，需利用一研磨工具進行拋光 $ 墊修整作業，該拋光墊修整器乃是將鑽石顆粒設於圓盤狀 或圓環狀的金屬基材上，而將該研磨工具用於拋光墊修 整，該研磨工具亦被稱為「鑽石碟（Diamond Disk)」，該 鑽石碟的功能係用來使其修整拋光墊表面，提高矽晶圓拋 光的效率及平坦化的作業品質，亦可以進行排除化學機械 . 研磨製程後的積屑問題。 . 請參閱第一圖所示，其為習知的一種研磨工具1 a之 示意圖，其藉由合金硬焊方式以將鑽石顆粒1 1 a結合於 該金屬基材1 0 a上之焊料層1 2 a中，此方式雖然可將 3 201103693 鑽石顆粒1 1 a固定於該金屬基材丄〇a上，但卻會出現 鑽石顆粒1 1 a的排列雜亂與分布不均之問題。 而另一傳統的研磨工具係將具有網目之固定網架設 於一基材上，並將鑽石顆粒依照網目的排列規則地定位於 该基材上’再藉由合金粉的燒結製程將鑽石顆粒固定於基 材上。上述的方法雖然可以達成鑽石顆粒的規則排列，但 _定網的網目大小具有一定的物理限制，因此，利用固 疋網的方式並無法適用於小尺寸的鑽石顆粒， ·再一方面， 二=程必須經過燒結製程，而燒結溫度（約 顆生碳化現象，而造成鑽石顆粒容易發生斷 裂的問碭。再者’固定網的網目排列係201103693 VI. Description of the Invention: [Technical Field] The present invention relates to a precision grinding tool and a method of manufacturing the same, and more particularly to an abrasive tool having preferred polishing characteristics and a method of manufacturing the same. [Prior Art] With the development of semiconductor processes, it has been widely used in the process of semiconductor manufacturing. For example, since the surface of the wafer must be smooth to facilitate the subsequent process, the crystal in the semiconductor industry In the round process, the grinding tool is widely used in chemical mechanical polishing (CMP) to grind and polish wafers. During the CMP process, the wafer is capped by a disk and pressed down onto a rotating polishing pad, and an acidic or alkaline grinding fluid is injected onto the polishing pad for polishing and grinding operations. In the CMP process, a polishing tool is used to perform a polishing process. The polishing pad is formed by placing diamond particles on a disk-shaped or annular metal substrate. The polishing tool is also called "Diamond Disk", which is used to trim the surface of the polishing pad to improve the efficiency of polishing the wafer and the quality of the flattened work. It is also possible to eliminate the problem of accumulated chemical after the chemical mechanical process. Referring to the first figure, it is a schematic diagram of a conventional grinding tool 1 a for bonding a diamond particle 11 a to a solder layer 1 on the metal substrate 10 a by alloy brazing. In 2 a, although this method can fix 3 201103693 diamond particles 11 1 a on the metal substrate 丄〇a, there is a problem that the arrangement and distribution of the diamond particles 1 1 a are uneven. Another conventional abrasive tool mounts a fixed mesh having a mesh on a substrate, and regularly positions the diamond particles on the substrate according to the mesh arrangement. The diamond particles are fixed by the sintering process of the alloy powder. On the substrate. Although the above method can achieve the regular arrangement of diamond particles, the mesh size of the fixed network has certain physical limitations. Therefore, the method of using the solid mesh can not be applied to small-sized diamond particles, and on the other hand, two = The process must be subjected to a sintering process, and the sintering temperature (about the phenomenon of carbonization, which causes the diamond particles to break easily.
為矩形’因此，鑽石顆粒的大小分布、排；U S布的密度均僅具有單-的形式，並無法隨著職面而 ▲緣是，本發明人有感上述缺失之可改善 °十合理且有效改善上述缺失之本發日月。。 0又 【發明内容】 本發明之主要目的，在於提供—6 製造方法，該製造方法係採用低溫製;精=:及* 高ί燒結而產生的“碳化的問題二 級）皆可料甘㈣ 又及㈣大小（可小至奈米等 較佳的研磨t 因此本發明之精密研磨工具可具有 為了達成上述之目的，本發明係提供—種精密研磨工 201103693 具之製造方法，步驟如下：步驟一：提供一基材；步驟二： 利用鑽石植入圖陣對位排列法（DIAMAP)將研磨顆粒固定 於基材表面所設計位置上；步驟三：成型一第二固定層= 該基材之表面，以披覆該第一固定基座以及該基材之^露 表面，其中該第一固定基座與該第二固定層係用以固= 磨顆粒。 鑽石植入圖陣對位排列法（DIAMAP)技術主要包含三 個步驟，步驟一：在基材表面生成容置部；步驟二：二； 當的研磨顆粒植人容置部；步驟三：成型第基座並 包覆研磨顆粒並移除容置部。 本發明更提供-種精密研紅具，包括：—基材以及 複數個規則排列於該基材之表面的研磨獅，每—個 磨顆粒與該基材的接觸位置係包覆有-第-固定基座f且 該f一固定基座上與該基材之裸露表面則成型有一第二It is a rectangle's, therefore, the size distribution and arrangement of the diamond particles; the density of the US cloth has only a single-form, and it cannot be along with the job. The inventor feels that the above-mentioned deficiency can be improved. Effectively improve the above-mentioned missing date. . 0] [Summary of the Invention] The main object of the present invention is to provide a manufacturing method of -6, which is made of a low temperature system; the "carbonization problem of the secondary" produced by the fine =: and * high sintering can be expected (4) And (4) size (small to nanometer and other preferred polishing t. Therefore, the precision grinding tool of the present invention can have the manufacturing method of the precision grinding machine 201103693, in order to achieve the above object, the steps are as follows: a: providing a substrate; step 2: using a diamond implant pattern alignment method (DIAMAP) to fix the abrasive particles at a design position on the surface of the substrate; step 3: forming a second fixed layer = the substrate a surface for covering the first fixed base and the exposed surface of the substrate, wherein the first fixed base and the second fixed layer are used for solid-grinding particles. Diamond implant pattern alignment alignment method (DIAMAP) technology mainly comprises three steps, step one: generating a receiving portion on the surface of the substrate; step two: two; when the abrasive particles implant the receiving portion; step three: forming the base and coating the abrasive particles and Remove the housing The invention further provides a precision grinding red tool, comprising: a substrate and a plurality of grinding lions regularly arranged on the surface of the substrate, each of the grinding particles and the substrate are covered with a contact position - Fixing the base f and forming a second surface on the fixed base of the f and the exposed surface of the substrate
固定層’其t該些研磨顆粒係規則地固設於該基材之表 面’以形成一研磨面。 本發明具有以下有益的效果 -—，人个.贯明從出之製造方 法，係利用鑽石植入圖陣對位排列法將研磨顆粒固定於基 材表面’制用第二㈣層㈣研磨雌與基材之間的固 …因此纟u並不利用燒結等高溫製程將研磨顆粒 口疋於基材表面上，以避免研磨顆粒易發生斷裂的問題。 本發明之方法可調整上述容置部的態樣，如分 σ大小的不同、或是將容置部以區 域的方式成型於該基材表面上，以使研磨難在形成研磨 201103693 ===:變:二粒大小的變化、或是形成 、” ' 而上述變化均是傳統製造方法所 …去達成θ此’本發明所製作的精密研磨玉具具有較佳 的研磨能力。 、為使能更進—步瞭解本發明之龍及技彳，㈣容，請參 閱乂下有關本發明之抽說明與關’然而所關式僅提 供參考與說明用，並非絲對本發明加錄制者。 【實施方式】 請參閱第二圖與第四圖，本發明係提供一種精密研磨 工，1之製造方法’該製造方法可將研磨齡2 Q規則地 固疋於基材1〇的表面’使其可用於高精密的研磨作業， 且本製造方法利純溫製程製作上述之精密研磨工具 ^ ’以避免研磨顆粒2 Q因高溫燒結所產生的劣化。該精 磨工具1之製造方法包括如下步驟(請同時參閱第三 步驟（S101 ):提供一基材i 〇。此實施例中該基材 1y係為一不銹鋼材質，但不以上述為限，例如該基材1 〇可為鋁合金、鈦合金或合金鋼等金屬材質，或是氧化物 ^瓷、碳化物陶瓷或氮化物陶瓷等陶瓷材質，或高硬度塑 膠材λ。換言之，該基材^ 〇的材質不限，但該基材工〇 *、、v員具有疋的硬度，以抵抗研磨作業時研磨物件所產生 的相對正向壓力。 接下來’利用鑽石植入圖陣對位排列法（DIAMAp)將鑽 石等磨料微粒固定於具有設計圖樣的基材1 〇的表面之 201103693 上。而上述鑽石植入圖陣對位排列法（讀）係包括步驟 (s騰）至步驟（㈣4)，請參考以下說明。步驟 (S1021):成型複數個容置部於該基材i Q之表面。在本 發明中，主要係在該基材！◦之表面形成多個規則排列之 容置部，以利後續步驟中得以將研磨顆粒置放於每一容置 部，進而達成研磨顆粒的規則排列。而在本步驟中 明之容置部可以湘半導體製程方法、微機電方法、壓 P ’’·罔印、點墨、雷射加工或放電加工方法等方式所製 該些容置部可利用—成型於該基材1Q表面 ==置部之輔助層’利用半導體方法、微機電方 法或_助層的化學物理性質成型上述之容置部。而 的該些容置部可以在該A^ η > ^ ^ ^土材1 0表面上成型為規則排 Λ ^ ° °周正、或是間距小的特點，例如每一容置 β的開口大小可根墟廡田& ^ a / 據 周整，在本發明中，該容置 不门二〇小大致上為10至500um;且該些容置部可且有 不同的開口大小。 II、, ”^1G22):將研磨顆粒2Q植人於該些容置部， 2〇Γ Γ牛置部均容設有至少一個磨料微粒（即研磨顆粒 =中=要係將研磨顆粒2 ◦規則地一 置部：=:20的大小嫩據上步驟中該容 2 0 # ^ ^ ^ ^ 在本具體實施例中，該研磨顆粒 u係為檨米（micr〇)等 粒。而上述的磨料微粒^ ^ &a等級之鑽石微 物陶mm/為鑽石、碳化物陶究粉末、氧化 mu化物喊粉末，該些研磨顆粒的粒徑範圍 201103693 係介於100奈米（nm)至500微米（μ]η)。 步驟（S1023 ):成型一第一固定基座3 〇於該些容置 部，以將研磨顆粒2 0固定於該基材i 〇之表面。由於上 一步驟中，每一容置部中均容設有至少一個研磨顆粒2 〇故本步驟主要係藉由第一固定基座3 0將上述的研磨 顆粒2 0固定於該基材1 〇之表面。在本具體實施例中， 係利用電“方法成型一鎳基座於該鑽石微粒與該基材1 0的接觸位置’利用§亥鎳基座包覆該鑽石微粒的下底部， 並使其連錢定於縣材！ Q上，* f鏟或f鑄過程中所 必須進行的電隔離步驟係為公知常識，在此不加以贅述。 但本發明並不蚊上述的方法，其他例如：化學鍍方法、 物理氣相/尤積方法（pVD)或化學氣相沈積方法（CVD)等 ^可用以實施本發明’且根據各種實際的制，該第一固 疋基座3 0可為金屬（如鈦、銅、紹等）、陶一泛、複合 料或鑽石等。 ,步驟（S1024):去除該些容置部。在此步驟中，係將 $成違些谷置部加以去除，例如直接湘化學方法去除， 但不以上述為限。 ” 步驟（S103):成型一第二固定層4 〇於該基材工〇 之表面。在此步驟中，係成型該第二时層4 0以披覆該 第：固定基座3 0以及該基材丄〇之裸露表面，而該第二 固疋層4 0的目的在於加強該些研磨顆粒2 〇與該基材 1 0之間的固接力’以使該些研磨顆粒2 〇得以抵抗研磨 作業時的剪S力；而同於第—固定基座3 Q，第二固定層 201103693 利用電鍍方法、化學鍍方法、物理氣相沈積方法 =乳相沈積方法成型，而該第二固定層40係可為-:屬：：一陶莞層、一複合材料層或一氣相成長之鑽石 '^第—固疋層4 ◦係可用於將研磨顆粒2 0穩 固地接附於基材1 0上。The fixed layer 'these abrasive particles are regularly fixed to the surface of the substrate' to form an abrasive surface. The invention has the following beneficial effects--the manufacturing method of the human beings is to fix the abrasive particles on the surface of the substrate by using the diamond implant pattern alignment method to make the second (four) layer (four) grinding the female The solid content with the substrate is therefore not used to smear the abrasive particles on the surface of the substrate by a high-temperature process such as sintering to avoid the problem that the abrasive particles are prone to breakage. The method of the present invention can adjust the aspect of the above-mentioned accommodating portion, such as the difference of the sigma size, or form the accommodating portion on the surface of the substrate in a regional manner, so that the grinding is difficult to form the grinding 201103693 === : change: the change of the size of the two particles, or the formation, "' and the above changes are the traditional manufacturing methods ... to achieve θ this 'the precision grinding jade made by the invention has better grinding ability. Further, to understand the dragon and the technology of the present invention, (4), please refer to the following description of the invention and the related description. However, the reference is only for reference and explanation, and is not intended to add a recorder to the present invention. MODES OF THE PREFERRED EMBODIMENT Referring to the second and fourth figures, the present invention provides a precision grinding machine, a manufacturing method of which can be used to fix the grinding age of 2 Q to the surface of the substrate. In the high-precision grinding operation, and the manufacturing method produces the above-mentioned precision grinding tool in a pure temperature process to avoid deterioration of the abrasive particles 2 Q due to high-temperature sintering. The manufacturing method of the refining tool 1 includes the following steps (please with Referring to the third step (S101), a substrate i is provided. In this embodiment, the substrate 1y is made of a stainless steel material, but not limited thereto, for example, the substrate 1 may be an aluminum alloy, a titanium alloy or Metal materials such as alloy steel, or ceramic materials such as oxides, ceramics, or nitride ceramics, or high-hardness plastic materials λ. In other words, the material of the substrate is not limited, but the substrate is 〇* The v member has a helium hardness to resist the relative positive pressure generated by the abrasive article during the grinding operation. Next, the diamond implant particle array (DIAMAp) is used to fix the abrasive particles such as diamond to the design pattern. The substrate 1 is on the surface of 201103693. The above-mentioned diamond implant pattern alignment method (reading) includes steps (s) to steps ((4) 4), please refer to the following description. Step (S1021): molding plural The accommodating portion is on the surface of the substrate i Q. In the present invention, a plurality of regularly arranged accommodating portions are formed mainly on the surface of the substrate ◦ to facilitate the placement of the abrasive particles in the subsequent steps. Each of the accommodating parts, thereby achieving grinding The regular arrangement of the particles, and in the present step, the accommodating portion can be made by the method of the semiconductor manufacturing process, the microelectromechanical method, the pressure P '', the ink, the laser processing or the electric discharge machining method. The portion can be formed by forming an auxiliary layer formed on the surface of the substrate 1Q == the portion using the chemical and physical properties of the semiconductor method, the microelectromechanical method or the auxiliary layer. The plurality of the receiving portions can be The A^ η > ^ ^ ^ soil material 10 is formed on the surface as a regular row Λ ^ ° ° Zhou Zheng, or a small pitch, for example, the opening size of each of the accommodated β can be rooted in Putian & ^ a / According to the whole, in the present invention, the accommodating portion is substantially 10 to 500 um; and the accommodating portions can have different opening sizes. II,, "^1G22": the abrasive particles 2Q are implanted in the accommodating portions, and the 2 〇Γ yak portions are each provided with at least one abrasive particle (ie, abrasive particles = medium = to be ground particles 2 ◦ Regularly a portion: =: 20 is the same size as in the previous step. 2 0 # ^ ^ ^ ^ In the present embodiment, the abrasive particle u is a micr 等 granule. Abrasive particles ^ ^ &a grade diamond micro-material pottery mm / for diamonds, carbide ceramic powder, oxidized mu compound shouting powder, the size range of these abrasive particles 201103693 is between 100 nanometers (nm) to 500 Micron (μ]η). Step (S1023): molding a first fixing base 3 to the receiving portions to fix the abrasive particles 20 to the surface of the substrate i. Since the previous step, At least one abrasive particle 2 is accommodated in each of the accommodating portions. Therefore, the first step of fixing the abrasive particles 20 to the surface of the substrate 1 by the first fixing base 30. In an embodiment, an electric "method is used to form a nickel pedestal in the contact position of the diamond particles with the substrate 10". The bottom of the diamond particles, and the money is fixed in the county! Q, * f shovel or f casting process must be carried out in the process of electrical isolation is common knowledge, not to repeat here. But the invention In the above method, other methods such as electroless plating, physical vapor/excessive method (pVD) or chemical vapor deposition (CVD) can be used to implement the present invention, and according to various practical systems, the first The solid foundation 30 can be a metal (such as titanium, copper, sho, etc.), a ceramic, a composite or a diamond, etc., step (S1024): removing the housings. In this step, the system will be $ It is removed from the valley portion, for example, by direct chemical method, but not limited to the above." Step (S103): Forming a second fixing layer 4 on the surface of the substrate workpiece. In this step Forming the second layer 40 to cover the first: fixed base 30 and the exposed surface of the substrate, and the second solid layer 40 is for reinforcing the abrasive particles 2 The fixing force between the substrate 10 and the substrate 10 is such that the abrasive particles 2 are resistant to the grinding operation The S-force is the same as the first-fixed base 3 Q, and the second fixed layer 201103693 is formed by an electroplating method, an electroless plating method, a physical vapor deposition method=emulsion deposition method, and the second fixed layer 40 is For -: genus:: a pottery layer, a composite layer or a vapor-grown diamond '^-solid layer 4 lanthanum can be used to firmly attach the abrasive particles 20 to the substrate 10.
本發明藉由上述步驟後，則可以得到一精密研磨工具 ’如第四圖所示，該精密研磨卫具i係包括：一基材1 〇以及複數個規則排列於該基材丄〇之表面的研磨顆粒 2 〇 ’每—個該研磨顆粒2 0與該基0的接觸位置係 包覆有一第―固^緑3 0，且該第—固定基座3〇上與 該基材1 0之裸露表面則成型有一第二固定層4〇，ι中 該些研磨顆粒2 〇係規則地固設於該基材工〇之表面'、以 形成-研磨面，以便於進行研磨作業。而該基材i 〇、研 磨顆粒2 0、第一固定基座3 〇與第二固定層4〇的材質 等具體實施態樣係同於上述說明，在此不再贅述。 二另一方面，藉由上述步驟（S1021)，本發明更可以調 整該研磨面的態樣，例如在步驟（sl〇21)中一預定的分 佈圖樣之容置部於該基材i Q上，使該基材i Q某些區1 不具有容置部，因此在步驟（Sl022 )中，研磨顆粒2 〇 即無法定位於該基材1 0上不具有容置部之區域，藉由容 置部的變化，在完成上述的步驟後，該研磨面即會包括一 研磨區2 0 1及一裸空區2 〇 2，該些研磨顆粒2 〇係規 則地固没於該研磨區2 〇 1 ’而該些裸空區2 〇 2之基材 表面上並無設有研磨顆粒2 〇 ;在研磨作業的操作中，該 201103693 些裸空區2 0 2即可用於提高研磨的排屬能力。再—方 面’同樣藉由具有複數個容置部的辅助層，可將該些容 部以不同密度的方式形成於該基材丨〇上，使該些研 粒2 =亦同樣以不同密度的方式固接於該基材】〇上。 綜上所述，本發明具有下列諸項優點： 1、由於本案所使用的製程步驟均屬於低溫製程的範田壽， 因此本發明可避免高溫燒結對磨料微 的碳化影響，進而可使本發明之精密研磨工具具 ^ 佳的研磨特性。 2、另一方面，本發明係利用鑽石植入圖陣對位排列法 OIAMAP) ’在基材表面形成具有特殊圖樣以容置磨料 微粒的容置部’因此可以根據實際的應用面製作不同 態樣的精密研磨工具，例如可調整磨料微粒之間的間 距大小、可固接尺寸較小的磨料微粒於該基材上或是 具有各種變化的磨料微粒分布，以提高研磨的能力。 3、由於本發崎於純㈣的㈣態樣及露^多寡均為 可控制’因此其研磨效率及速度均可加以準確預測； 對於量產而言，每批產出的品質也可達到有效控制。 惟以上所㈣為本發明之較佳實_，非意欲偈限本 ^明之專利保護範圍’故舉凡運用本發明說明書及圖式内 2為之等效變化，均同理皆包含於本發明之權利保護範 圍内，合予陳明。 【圖式簡單說明】 第一圖係為習知之研磨工具的示意圖。 201103693 第二圖係為本發明之精密研磨工具之製造方法的流程圖。 第一圖係為本發明第一實施例之製造方法的流程示意圖。 第四圖係為本發明第一實施例之精密研磨工具之立體示 意圖。 第四A圖係為本發明第二實施例之精密研磨工具之立體 示意圖。 【主要元件符號說明】 【習知】 la 研磨工具 10a 金屬基材 11a 鑽石顆粒 12a 焊料層After the above steps, the present invention can obtain a precision grinding tool. As shown in the fourth figure, the precision polishing fixture i includes: a substrate 1 〇 and a plurality of regularly arranged on the surface of the substrate The abrasive particles 2 〇 'each of the abrasive particles 20 and the base 0 contact position is coated with a first solid green 3 0, and the first fixed base 3 and the substrate 10 The exposed surface is formed with a second fixing layer 4, which is regularly fixed to the surface of the substrate workpiece to form a --grinding surface for the purpose of performing the grinding operation. The specific embodiments of the substrate i 〇, the grinding granules 20, the first fixed pedestal 3 〇 and the second fixed layer 4 等 are the same as those described above, and are not described herein again. On the other hand, by the above step (S1021), the present invention can further adjust the aspect of the abrasive surface, for example, a predetermined distribution pattern of the receiving portion on the substrate i Q in the step (s1〇21) In the step (S1022), the abrasive particles 2 无法 cannot be positioned on the substrate 10 without the accommodating portion, After the above steps are completed, the polishing surface includes a polishing zone 2 0 1 and a bare space 2 〇 2, and the abrasive particles 2 are regularly fixed in the polishing zone 2 〇 1 'The surface of the bare space 2 〇 2 is not provided with abrasive particles 2 〇; in the operation of the grinding operation, the 201103693 bare space 2 2 2 can be used to improve the grinding ability . In another aspect, the auxiliary portions having a plurality of accommodating portions can be formed on the substrate raft at different densities, so that the granules 2 are also at different densities. The method is fixed on the substrate. In summary, the present invention has the following advantages: 1. Since the process steps used in the present invention belong to Fan Tianshou of the low temperature process, the present invention can avoid the influence of high temperature sintering on the carbonization of the abrasive micro, and thus can make the present invention Precision grinding tools have excellent grinding characteristics. 2. On the other hand, the present invention utilizes a diamond implant pattern alignment method (OIAMAP) to form a receiving portion having a special pattern on the surface of the substrate to accommodate the abrasive particles. Therefore, it is possible to make different states according to the actual application surface. Such precision grinding tools, for example, can adjust the spacing between the abrasive particles, the smaller size of the abrasive particles can be fixed on the substrate or have various variations of the abrasive particle distribution to improve the grinding ability. 3. Because of the (four) pattern and the amount of exposure of the hair in the pure (four), the grinding efficiency and speed can be accurately predicted. For mass production, the quality of each batch can also be effective. control. However, the above (4) is a preferred embodiment of the present invention, and is not intended to be limited to the scope of the patent protection of the present invention. All the equivalents of the present invention and the equivalents in the drawings are equally included in the present invention. Within the scope of protection of rights, it is given to Chen Ming. BRIEF DESCRIPTION OF THE DRAWINGS The first figure is a schematic view of a conventional abrasive tool. 201103693 The second figure is a flow chart of the manufacturing method of the precision grinding tool of the present invention. The first figure is a schematic flow chart of the manufacturing method of the first embodiment of the present invention. The fourth figure is a perspective view of the precision grinding tool of the first embodiment of the present invention. Figure 4A is a perspective view of the precision grinding tool of the second embodiment of the present invention. [Main component symbol description] [Practical] la Grinding tool 10a Metal substrate 11a Diamond particles 12a Solder layer
【本發明】 1 精密研磨工具 10 基材 研磨區 裸空區 2 0 研磨顆粒 2 0 1 2 0 2 30 第一固定基座 40 第二固定層 S101〜S103 製作流程說明[Invention] 1 Precision grinding tool 10 Substrate Grinding area Bare empty area 2 0 Abrasive particles 2 0 1 2 0 2 30 First fixed base 40 Second fixed layer S101~S103 Production flow description