TW201043574A - Optoelectronic semiconductor composed of multicomponent high-entropy alloy oxide and preparing method thereof - Google Patents

Optoelectronic semiconductor composed of multicomponent high-entropy alloy oxide and preparing method thereof Download PDF

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Publication number
TW201043574A
TW201043574A TW98119188A TW98119188A TW201043574A TW 201043574 A TW201043574 A TW 201043574A TW 98119188 A TW98119188 A TW 98119188A TW 98119188 A TW98119188 A TW 98119188A TW 201043574 A TW201043574 A TW 201043574A
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Taiwan
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alloy
oxygen
oxide
atomic percentage
alloy oxide
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TW98119188A
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Chinese (zh)
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TWI378899B (https=
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fu-sheng Xue
Rui-Song You
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Nat Univ Chung Hsing
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TW98119188A 2009-06-09 2009-06-09 Optoelectronic semiconductor composed of multicomponent high-entropy alloy oxide and preparing method thereof TW201043574A (en)

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TW98119188A TW201043574A (en) 2009-06-09 2009-06-09 Optoelectronic semiconductor composed of multicomponent high-entropy alloy oxide and preparing method thereof

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TW98119188A TW201043574A (en) 2009-06-09 2009-06-09 Optoelectronic semiconductor composed of multicomponent high-entropy alloy oxide and preparing method thereof

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TW201043574A true TW201043574A (en) 2010-12-16
TWI378899B TWI378899B (https=) 2012-12-11

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104946912A (zh) * 2015-07-14 2015-09-30 太原理工大学 密排六方结构的稀土高熵合金
CN108359939A (zh) * 2018-03-06 2018-08-03 大连理工大学 一种可变带隙的AlCoCrFeNi高熵合金氧化物半导体薄膜及其制备方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104946912A (zh) * 2015-07-14 2015-09-30 太原理工大学 密排六方结构的稀土高熵合金
CN104946912B (zh) * 2015-07-14 2017-04-26 太原理工大学 密排六方结构的稀土高熵合金
CN108359939A (zh) * 2018-03-06 2018-08-03 大连理工大学 一种可变带隙的AlCoCrFeNi高熵合金氧化物半导体薄膜及其制备方法
CN108359939B (zh) * 2018-03-06 2020-10-13 大连理工大学 一种可变带隙的AlCoCrFeNi高熵合金氧化物半导体薄膜及其制备方法

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