201039978 六、發明說明： 【發明所屬之技術領域】 本發明係有關於一種使用一具有多個可變硏磨漿或其 它流體入口之硏磨漿注入器來改善在化學機械硏磨（CMP) 中之漿液使用效率及硏磨移除率變動之方法。 【先前技術】 • 近年來，化學機械硏磨（CMP)漿液與硏磨墊及鑽石調節 盤（diamond conditioner disks)—起構成用以實施（化學機械 〇 硏磨）CMP製程之設備的重要組件。這些硏磨墊及磧石調節 盤已由數個供應商生產及銷售在市場上銷售，而達到可靠 品質及效果的標準。該漿液之功能係要持續地運送機械磨 粒及化學成分至晶圓之表面及提供從該硏磨表面移除反應 產物及晶圓碎片之手段。具有數種該項技藝所已知之不同 效果及特性的漿液。 目前，對於最常見型態之CMP工具（旋轉硏磨機），使 Q 用一簡單輸送管、噴嘴或噴管將漿液以一固定流速施加至 旋轉硏磨墊。新的漿液在重力及向心加速度之影響下從施 加點流出，與用過的漿液或在硏磨墊與晶圓間所通過且在 硏磨中之漿液混合。 除有些額外化學「耗盡」之外，舊的漿液還包含來自 晶圓、調節器及墊之碎片；如果該舊的漿液再進入晶圓與硏 磨墊間之間隙，即會使該等碎片暴露至晶圓表面及會導致 污染之增加及缺陷之增加。因此，重要的是在產生硏磨之 201039978 碎片後，藉由擴大之使用漿液快速地從硏磨墊去除硏磨之 碎片至不可能將其再引入至晶圓下方之最大程度。 結果，該墊之旋轉促使該漿液與該晶圓之前緣或一晶 圓固定環（retainingring)之前緣接觸，其中該號液在前緣處 形成一弓形波（bow wave)。某些新的獎液在此時移流至該晶 _ 圓與硏磨墊間之10至25微米的窄間隙中，以用來硏磨。 , 該間隙之存在是因爲該墊之表面係粗糙的、該晶圓之表面 係相對平滑的及該晶圓只接觸該墊表面之高點。然而，大 〇 部分新的漿液維持成該弓形波及因該硏磨頭與墊之組合旋 轉而被帶至該墊之邊緣。該漿液因而在該墊之邊緣上損失 了。因此，實際漿液的利用率（總施加漿液進入該粗糙墊表 面與該晶圓間之間隙的新施加漿液之百分比）在這樣的旋 轉CMP工具中普遍是相當低的。這是重要的問題，因爲漿 液消耗及廢料處理佔一 CMP工具之擁有及操作成本的大部 分。 Q 因爲當硏磨晶圓時，該項技藝通常藉由施加去離子水 至該墊（通常將此水施加至該墊之中心）’以清除在晶圓間 之CMP硏磨墊的用過漿液，所以產生對硏磨移除速率及均 勻性的額外影響。在移除一晶圓與以一第二晶圓來取代它 之間的時間很短，以及當該新晶圓之硏磨開始時，大量的 水總是留在該墊上。 這樣的水係不均句地分佈，且結果，它以不均勻方式 稀釋新加入之漿液，造成因該稀釋漿液而使移除率普遍降 201039978 低及因在該墊之不同部分上的漿液濃度差異而使移除 均勻。因爲此效應持續數秒時間，所以它會有晶圓硏 間的25%至50%時間對任何部位造成重大負面效應， 而導致生產效果及生產品質之顯著及代價高的降低。 要有助於該漿液移流或進入至該晶圓下方，該習 藝之從事者已在該CMP墊中使用溝槽。此可有效地確 些漿液到達墊-晶圓界面，然而仍然使大部分漿液被拋 墊而總是沒有被用到。漿液係昂貴的且在該CMP製程 f) I 須包括用以提供及移除大量漿液之裝置、設備及程序 會複雜化及妨礙該製程。 目前，沒有有效方法可用來實質減少所用漿液之 或者確保在CMP期間引入該墊之大部分漿液被實際引 該墊與該晶圓間及在被拋離該墊前如期被使用。此外 有有效方法可用以在所施加之新漿液能進入該晶圓與 間之間隙前，防止該新漿液因水、舊漿液或碎片而稀 Q 污染。並且，目前沒有方法可用以最佳化在該墊之不 分中的漿液濃度，以便使從該晶圓之移除率的變動減 最小程度。 如上所述，現今解決這些問題之方法係在該CMP 表面中配置溝槽，以在CMP硏磨期間在該晶圓下方引 漿液之某些部分。在USP 5216843(Breivogel等人’提 期：1992年9月24日）（倂提於本文俾供參考）中，「一 以硏磨一薄膜之設備」··「該裝置包括」「一墊’ 率不 磨期 此轉 知技 保某 離該 中必 ，此 數量 入至 ，沒 該墊 釋或 同部 少至 墊之 導該 出曰 種用 覆蓋 201039978 該工作台’該墊具有一上表面，在該表面中已形成有複數 個預形溝槽’該等預形溝槽藉由在該墊/基板界面上產生複 數個對應點接觸，以有助於該硏磨製程。」以及「一手段， 用以提供複數個微通道溝槽於該墊之上表面中，同時硏磨 該基板’其中該等微通道溝槽藉由在該基板與該墊間輸送 該漿液，以有助於該硏磨製程。」又在USP 7175510(Skyopec 等人’提出曰期：2005年4月19日）（倂提於本文俾供參考） 中’描述一種硏磨方法，其中「該硏磨墊具有用以在該晶 圓與硏磨墊間輸送（原文如此）漿液之溝槽及從該晶圓清除 過多的材料，以允許該晶圓之表面的有效硏磨。」甚在最 近Skyopec等人提出的同時，用以使在該墊與該晶圓間所 引入之漿液量增加至最大程度的較佳方法係該等溝槽的準 備及該項技藝之從事者的努力侷限於確保以一合適方式再 產生或維持這些「微通道」。 在US 2007 0224920(倂提於本文俾供參考）中，以在該 Q 墊中之具有適合用以最佳化在該晶圓下方所引導之漿液量 的尺寸及大小之孔來增加這些溝槽之效果。然而，上述沒 有解決因漿液積聚成弓形波所造成之新漿液的浪費問題或 移除硏磨之一致速率的問題。 此外，諾發系統公司（Novellus Systems Inc.)已提出以 軌道硏磨機（orbital polishers)( USP 6500055，倂提於本文 俾供參考）對付漿液利用率問題，其中經由該硏磨墊將該漿 液直接注入該晶圓下方（USP 5 5 54064，倂提於本文俾供參 201039978 考）。此保證高的漿液利用率，但是需要一複雜平台及訂製 的墊，以容納電漿分配系統及特殊的硏磨工具，進而利用 該注入方法。同樣地，在US 2007 0281592(倂提於本文俾 供參考）中，經由在該鑽石調節盤中之孔引入及移除漿液及 其它調節化學品，以便有助於多步驟CMP製程，但是上述 並未意圖且沒有藉由導引晶圓與CMP墊間之較大碎片來有 效地改善漿液利用率。 並且，在該習知技藝中亦有USP59644113(倂提於本文 〇 俾供參考），該美國專利教示一種用以分配漿液之裝置。這 是一種用以噴灑漿液至該墊上而不是將它泵取至墊-晶圓 界面上之特定位置之裝置，且沒有提供本發明所尋求之期 望益處。 此外，USP 6929533(倂提於本文俾供參考）教示用以提 高晶圓內CMP均勻性之方法。此專利描述使用具有多噴嘴 之漿液分配管，以在整個晶圓軌道上分配漿液，進而提高 Q 旋轉及線性硏磨機之硏磨率均勻性的方法。該等漿液分配 管位於該墊上方且沒有接觸該墊。當相較於本發明時，此 方法缺乏產生一具有相同於晶圓-墊間隙之厚度的漿液層 之有利效果，其中此有利效果實質上是爲了使大量新的漿 液在第一時間移流至該墊下方。 USP 6283840(倂提於本文俾供參考）教示一種用於化學 機械硏磨裝置中之清潔及漿液分配系統組合件。此裝置具 有一出口，用以分配漿液至封閉區域，以在該封閉區域中 201039978 形成一漿液貯存槽（reservoir of slurry)，其中該漿液藉由行 進於硏磨表面與保持件（retainer)之下表面間被分配至一未 被該保持器圍住之區域。然而，沒有教示將該漿液施加至 需要漿液之特定岸部區域（land areas)，以及事實上，大部 分漿液經由該等岸部區域間之溝槽而損失，其中該等溝槽 在晶圓與硏磨墊間之剖面面積方面通常大於該等岸部區 域。此裝置亦沒有教示或達成將流量控制成爲距硏磨墊之 中心的半徑之函數，以及沒有教示或描述使舊的廢漿液、 〇 稀釋水或硏磨廢料與最近施加的漿液分離。 該裝置所達成之主要功能係控制漿液或清潔劑噴灑不 要沉積在硏磨機上，殘餘物在硏磨機上會成爲造成缺陷污 染之來源。上述在說明書中已被提及數次。技術背景在最 後一段中提及減少漿液隨時間之消耗，但是該專利沒有教 示該裝置可完成此目的或如何確實完成此目的。 USP 5 997 392教示用於化學機械硏磨之漿液注入技 Q 術。該漿液施加方法包含在壓力下從複數個噴嘴噴灑該漿 液至該墊上，然而，此發明遭遇相同於USP 6929 5 3 3 (特此 以提及方式被倂入）的缺點，因爲該漿液之配置及成形的準 確性之欠缺實質減少它的效果。 美國專利第4,91 0,1 55號（倂提於本文俾供參考）描述基 本的 CMP製程及在硏磨墊與硏磨台周圍使用一保持牆 (retaining wall)，以在該墊上保持一灘漿液。它沒有描述一 種用以使該匯集漿液更有效地進入該墊-晶圓間隙之特別 201039978 方法。美國專利第5,403,228號（倂提於本文俾供參考）揭露 —種用以在一CMP製程中安裝多個硏磨墊至—平台上之技 術。在該等墊間之界面的周圍配置一具有不受該硏磨漿液 之化學作用的影響之材料的密封墊（seal)，以及當組裝該等 墊時，加強環（bead)受擠壓及形成一密封墊及使上墊之周圍 向上彎曲’進而產生一用以增加漿液在溢出該墊前在該墊 之表面上的駐留時間之碗狀貯存槽。 美國專利第3,342,652號（倂提於本文俾供參考）教示一 〇 種用以化學硏磨一半導體基板之製程及突然將一漿液溶液 施加至該墊之表面’以成爲一在布料與待硏磨晶圓間形成 ~液態層之液流。該溶液係由一分配瓶（dispensing bottle) 來施加且正切地被施加至晶圓·板組合件（wafer-plate assembly)，以提供該硏磨布之最大清洗，以便移除廢棄的 • 蝕刻產物。美國專利第4,549,374號.（倂提於本文俾供參考） 使用一用以硏磨半導體晶圓之特殊配製磨料漿液，其包括 ^ 在去離子水中的蒙脫土（montmorillonite clay)。 在USP 62 84092(倂提於本文俾供參考）中，CMP教示一 種漿液自動化漿液分配系統，其中「一硏磨漿液分配裝置 係配置成用以朝該墊分配該漿液成最好爲一液流或更好是 朝該墊表面之液滴及一幕狀空氣，以在該硏磨墊表面上或 附近貫穿該漿液。使用比一傳統硏磨裝置少之漿液硏磨該 晶圓，同時仍然保持該習知技藝硏磨裝置之硏磨率及硏磨 均勻性。一較佳分配器係一內部具有漿液管及空氣管之長 -10- 201039978 條形容器’每一管沿著它的縱軸具有複數個 空氣口，該管最好以放射狀來配置且至少超 直徑的一半。 最好以液滴之形式從該漿液管朝該墊之 磨漿液，以及來自該空氣管之空氣形成一空 氣幕最好在該墊表面上或稍微上方貫穿該等 使該漿液成霧狀。」 雖然此系統均勻地分配該漿液，但是它 〇 該晶圓之前緣上的漿液層之厚度爲該間隙之 這樣實施。 USP 6398627教示一種具有多個可調整 配器。在該技藝之教示中，揭露一種用於化 裝配有多個漿液分配噴嘴的漿液分配單元。 元係由一分配器本體及複數個噴嘴所構成， 本體具有一運送導管、一回送導管及一 U形 Q 流體連通方式彼此連接，以便使一漿液溶液 動；以及該複數個噴嘴以流體連通方式整合 該運送導管中之流體通道，以便分配一漿液 漿液分配噴嘴可以藉由在每一噴嘴開口上使 閥以具有一固定開口或可調整開口。此專利 及之技藝，不具有可確保在該晶圓之前緣上 度相同於該晶圓-墊間隙的特徵。 USP 6429131(倂提於本文俾供參考）係關 隔開漿液口及 過該硏磨墊之 表面引導一硏 氣幕，且該空 漿液液滴，以 無法以保證在 厚度的方式來 噴嘴之漿液分 學機械硏磨之 該漿液分配單 其中該分配器 導管，它們以 在其間不斷流 地連接至一在 溶液。該多個 用一流量控制 如同先前所提 的漿液層之厚 於CMP均勻性 201039978 及教示藉由提供漿液分配之改良控制所達成之改良CMP均 勻性。藉由例如使用一用以從複數個分配點分配漿液之漿 液分配器，以達成漿液分配之改良。在該漿液分配器與晶 圓間提供一壓桿（squeezebar)’以再分配該發液’亦可改善 該漿液分配。此本發明可在該墊上均勻地分配漿液，但是 沒有提供一均勻漿液層有該間隙之厚度。 最後，在美國專利申請案第1 2 262,5 79(倂提於本文俾 供參考）中，一種用以在該晶圓與該硏磨墊間注入漿液之方 〇 法及裝置，其包括一整體新月形注入器，使該整體新月形 注入器之凹後緣以〇至1英吋之間隙符合該硏磨頭之前緣 的尺寸及形狀，該整體新月形注入器輕倚在該墊上且它的 下表面面對該墊，經由該整體新月形注入器將CMP漿液或 其成分導引通過該注入器之頂部中的一個或多個開口，行 經一通道或貯存槽有該裝置之長度並到達該底部，在此， CMP漿液或其成分從該注入器之底部中的多個開口流出， D 並以足夠小的量沿著該晶圓之前緣在該硏磨墊之表面與該 晶圓的界面引入此CMP漿液或其成分，進而將全部或大部 分漿液引入於該晶圓與該硏磨墊之間。此解決漿液引入之 問題，亦即相對地不受進入該晶圓與該墊間之間隙中之廢 漿液、過量稀釋水或硏磨碎片的污染。 雖然溝槽及微通道之產生及維護對於CMP硏磨之操作 很重要，但是它們仍然沒有提供一在該墊與該晶圓間引入 漿液之有效手段，藉此將被引入至該墊之大部分或甚至一 -12- 201039978 實質部分的漿液引入該墊與該晶圓間。再者，雖然已設計 非常多方法來將漿液均勻地擴散至該墊上，但是至今沒有 教示一種用以準備一具有適當厚度以順利進入該墊-晶圓 間隙之漿液層的方法。大部分漿液在該晶圓之前緣以漿液 波的形式持續累積，該漿液之大部分沿著該前緣向外移動 而被拋離該墊之邊緣及被浪費掉。此外，在該晶圓下方且 受污染之用過漿液隨著該墊之旋轉返回及在該弓形波處與 該新的漿液混合，進而明顯減少在實際CMP中所使用之漿 〇 液的品質及明顯增加廢料。最後，該習知技藝之這些方法 沒有減少對材料移除及晶圓間所添加之殘留漿液清洗水的 均勻度之負面影響。再者，本發明之裝置及方法將漿液注 入該.晶圓與該墊間之間隙，但是該前述所揭露之方法沒有 有效地保證將漿液均勻地分配至該晶圓與該墊間之間隙。 此導致該晶圓之硏磨的不均勻性。 【發明內容】 〇 本發明係一種用以使用美國專利申請案第1 2 262,579 號所述之裝置在半導體晶圓之化學機械硏磨中注入漿液於 該晶圓與該墊間之方法，該裝置包括一整體新月形注入 器’使該整體新月形注入器之凹後緣以〇至1英吋之間隙 符合該硏磨頭之前緣的尺寸及形狀，它的下表面面對該 塾’該整體新月形注入器輕倚在該墊上，經由該整體新月 形注入器將CMP漿液或其成分導引通過該注入器之頂部中 的一個或多個開口’行經一通道或貯存槽有該裝置之長度 -13- 201039978 並到達該底部，在此，CMP漿 部中的多個開口流出，散佈成 著該晶圓之前緣在該硏磨墊之 CMP漿液或其成分，進而將全 圓與該硏磨墊之間，其中用於 開口被利用及安裝有用以控制 量的裝置，以及在硏磨期間或 墊之岸部區域上獲得一均勻分 〇 圓上獲得一更均勻移除率。 本發明更特別地是一種用 硏磨中注入漿液於該晶圓與該 漿液之引入的多個開口及使該 同濃度漿液或稀釋液或其它流 磨期間或之後調整這些裝置， 一均勻分佈之新漿液，轉而在 0 除率，其中使這樣的引入方法 整該等用於流量控制之裝置的 該漿液貯存槽之不同部分中之 上之漿液分佈。 【實施方式】 本發明之發明人尋求一種 效使用及一種在該墊與該晶圓 以保證使更多新漿液移流至該 液或其成分從該注入器之底 一薄膜以及以足夠小的量沿 表面與該晶圓的界面引入此 部或大部分漿液引入於該晶 漿液至該裝置之引入的多個 不同濃度漿液或稀釋液之流 之後調整這些裝置，以在該 佈之新漿液，轉而在整個晶 以在半導體晶圓之化學機械 墊間之方法，其中使用用於 多個開口安裝有用以控制不 體之流量的裝置，以及在硏 以在該墊之岸部區域上獲得 整個晶圓上獲得一更均勻移 在一回饋迴路中與一用以調 裝置結合，因此可以調整在 漿液的濃度，以改善在該墊 在CMP製程中之漿液的更有 間引入漿液之更有效方法， 晶圓下方及該漿液之分佈係 -14- 201039978 均勻的，以改善在該晶圓表面之硏磨中的均勻性。更特別 地，本發明之發明人已設計一種調整經由在美國專利申請 案第1 2 262579號中所述之注入器的頂部上之多個開口的 漿液及稀釋液流量的方法，以便可以將均勻分佈之漿液注 入至該墊上，以及甚至更特別地，設計一種用以測量該系 統以確定漿液分佈及/或硏磨係均勻的及在不是均勻情況 下快速地且有效地調整它們之感測器及回饋系統。 此裝置更特別地包括一整體新月形注入器，使該整體 〇 新月形注入器之凹後緣與設置成具有〇至1英吋之間隙的 該晶圓或硏磨頭之前緣的尺寸及形狀一致，該整體新月形 注入器輕倚在該硏磨墊上，該整體新月形注入器之面對該 硏磨墊的下表面實質上係平坦且平行於該硏磨墊之表面及 與它接觸，以及以該整體新月形注入器經由有一端裝至漿 液或漿液成分源（它可以是標準漿液供應系統）及另一端裝 至在該注入器之頂部中的入口之多個管引入CMP漿液或其 Q 成分，且此CMP漿液或其成分行經一延伸該整體新月形注 入器之長度且在該硏磨墊之被該晶圓接觸的那個部分上方 的內部分配通道或貯存槽及通過該整體新月形注入器之底 部，在此，該漿液從該注入器之底部中的多個開口流出， 以薄膜形式將此CMP漿液或其成分散佈在該硏磨墊表面， 以及以足夠小的量沿著該晶圓之前緣將此CMP漿液或其成 分引入該硏磨墊之表面與該晶圓間，以保證將全部或大部 分漿液引入該晶圓與該硏磨墊之間及引入至在該等新月形 -15- 201039978 狀置之頂部上的多條管線，特別將用以控制漿液或稀釋液 或其它流體至腔室之流量的閥（更特別地是可調整針閥）固 定至一感測器系統（特別是一觀測在該注入器之後緣與該 晶圓之前緣間的該墊之表面上的漿液濃度之系統）。 發展本發明之方法，以回應該項技藝之目前狀態，以 及特別是回應在該項技藝中尙未被用於CMP工具之目前可 用CMP漿液供應系統所完全解決之問題及需求。因此，本 發明之一總體目的係提供用以去除該習知技藝之缺點的 〇 ' CMP漿液注入方法。 此方法之目的係要允許將漿液更有效地注入該硏磨墊 與該晶圓間之空間，以及在該注入不是最佳之程度時，調 整該注入來達成最佳條件，以致於在改善移除率之均勻性 的同時，可以最佳化漿液使用。 CMP漿液應該是未經處理的（預先釋稀的），以便更能 磨掉及平坦化用於像矽晶圓或矽化合物晶圓這樣的半導體 Q 晶圓之晶圓的金屬表面，其中該等晶圓已電鍍有銅或鎢， 以及之後，平坦化半導體表面本身。原則上，當允許舊漿 液或水與新漿液大規模地混合時及允許不受控制的數量及 很多此混合物從該硏磨墊除去而沒有被使用在該晶圓下方 時，會有漿液之實質浪費及最終沒有在該晶圓下方找到出 路之漿液係完全沒有效率的。再者，漿液之不受控制的釋 稀導致硏磨速率之不均勻性。然而，在該注入器上之漿液 的特別受控釋稀會造成漿液之均勻流量，以便可使進入該 -16 · 201039978 晶圓之前緣的每一部分下方之漿液量相同或者可對其實施 調整，以適合該硏磨製程之需求。 CMP墊之製造商及使用者需要最小化漿液廢料及最大 化漿液注入效率及所施加漿液量之一致性，以獲得最大成 本效益及晶圓之高品質硏磨。此外，製造商需要儘可能在 該整個晶圓上合理獲得好的移除率之均勻性。 在該項技藝中因有漿液之均勻流量或分配的問題而知 道在CMP中對於該晶圓之不同區域的表面速率移除之不均 〇 ^ 勻性的問題已有一段時間。 除了使用供引入漿液至該裝置之多個開口及使該多個 開口安裝有用以控制不同濃度漿液或稀釋液或其它流體之 流量的裝置，以及在硏磨期間或之後調整這些裝置，以在 該硏磨墊之岸部區域上獲得一均勻分佈之新漿液，轉而在 整個晶圓上獲得一更均勻移除率之外，本發明藉由保證新 漿液儘可能最終是在該晶圓與該硏磨墊間之間隙中及不是 〇 在該晶圓之前緣前的一弓形波（在該處如果沒有大部分也 有很多新漿液因向心力而被拋離該硏磨墊之邊緣而從未被 使用）中及藉由確保將該漿液以有助於該晶圓表面之均勻 硏磨的數量及位置沿著該晶圓之前緣輸送至該晶圓，以在 該硏磨墊表面上維持用過漿液及殘留水與該新添加漿液之 實體分離，進而克服該習知技藝之問題。 經由本發明之漿液注入器的使用，可輕易達成漿液之 一致、有效及少量使用與合適分配及移除率之較大均勻 -17- 201039978 性’以改善硏磨晶圓品質。 本發明中之零件之所有尺寸根據直徑約20"至30"之墊 尺寸及直徑[8”]至[12"]間之晶圓尺寸，以及如需要的話， 能以與所使用硏磨墊及晶圓之尺寸的變化成比例方式改變 它們。絕沒有限制在此所提供之特定尺寸，而是藉由範例 來說明本發明之一有效實施例。 本發明包括一種用以在該硏磨墊與該晶圓間有效引入 漿液之方法，同時該方法大幅去除該習知技藝之CMP硏磨 〇 方法的漿液浪費之特性；允許在任何時候以可被調整至最 有利於晶圓硏磨均勻性之數量在該硏磨墊表面上使用一純 未使用及未稀釋漿液；以及額外地允許CMP硏磨設備之操 作者對於該晶圓與該硏磨墊間之漿液的引入有重要控制。 更特別地，本發明包括一種用以使用美國專利申請案 第1 2 262579號之裝置在半導體晶圓之化學機械硏磨中注 入漿液於該晶圓與該硏磨墊間之方法，該裝置包括一整體 Q 新月形注入器（10)，該整體新月形注入器（10)之凹後緣（12) 與具有〇至1英吋間之間隙（42)的該晶圓（28)之前緣（14)的 尺寸及形狀一致；該注入器（丨〇)輕倚在該硏磨墊（26)上；該注 入器（10)之下表面（16)實質上是平坦的且平行於該硏磨蟄 (26)之表面（36)上；以及以該注入器（1〇)使CMP漿液或其成 分經由裝至流量控制裝置U9)及另外裝至在該整體新月形 注入器（10)之頂部（7 6)中之入口（20)的多個管（18)或其它合 適輸送裝置引入及流經一通道或貯存槽（22)有該整體新月 -18- 201039978 形注入器（10)之長度至該通道或貯存槽（22)之底部（7 8)，在 此，CMP漿液或其成分經由在該整體新月形注入器（10)之 底部（16)中之多個開口（24)從該整體新月形注入器（10)流出） 及在該整體新月形注入器（10)之底部（16)與該硏磨墊（2 6)間 受壓、散佈成一薄膜及以足夠小的量及以一充分薄膜沿著 該晶圓（28)之前緣（14)引入該硏磨墊（2 6)之表面（36)與該晶 圓（28)之接面，最好引入至該墊中之溝槽（32)間的「岸部」 _ (30)區域上，以便將全部或大部分之漿液引入該晶圓（28) 〇 與該硏磨墊（26)間及藉此使用過的漿液以它在該整體新月 形注入器（10)之前緣（34)上的第二弓形波（4 6)中的濃度更有 效地與新注入電漿保持分離。 如果使用用於漿液或流體之多個入口（20)，這些入口 可以全部具有相同或不同尺寸、容量或配置。在本發明之 一實施例中，使用一主漿液入口及數個其它入口。該等入 口（除了該主漿液入口之外）之每一者可以攜帶漿液或它們 〇 能以任何組合或配置攜帶水或其它稀釋液或流體。在本發 明之一實施例中’該（等）主漿液入口引入漿液至該注入器 及該等剩餘入口引入水或其它稀釋液或流體至該注入器。 在此實施例中，藉由該等其它入口引入稀釋漿液或水係較 好的及水之引入係更好的。沒有特別限制這樣的額外入口 之數目及在該注入器裝配有一通道之情況中，該等額外入 口（20)可以允許直接引入漿液、稀釋漿液、水或其它稀釋 液至該通道中或者一些或全部這樣的入口可以朝該漿液注 -19- 201039978 入器（ίο)之前緣或後緣的方向繞過該通道及允許直接引入 漿液、稀釋漿液、水或其它稀釋液至該硏磨墊表面。然而’ 該注入器可裝配有一第二平行分配通道’然而’此將造成 額外複雜度，而使得漿液至該硏磨墊之施加的調整更困難 及可能降低對特別低黏性稀釋液（例如’水）之局部施加的 控制。在本發明之不同實施例中，所有入口可以直接進入 該通道，所有入口可以經由該注入器之下表面直接供應流 體至該硏磨墊之表面，或者可以使用入口之任何組合。在 使用一通道之情況下’至少一些未稀釋漿液之引入係較好 的及全部未稀釋漿液至該通道之引入係更好的。在此情況 中，能以入口經由該注入器之下表面直接引入一些或全部 稀釋液至硏磨表面。沒有特別限制這樣的入口（包括該第一 或主未稀釋漿液入口）之數目’但是1至20個入口係較好 的，3至10個入口係更好的，5至8個入口係最好的。可. 以使任何或所有入口（20)安裝有流量控制裝置（19)。沒有特 Q 別限制用以產生這樣的入口之裝置及可以使用任何合適裝 置。然而，藉由鑽穿該注入器來製備該入口（20)係較好的。 可以藉由任何合適裝置將該等管（18)及流量控制裝置（19) 裝至該入口，以及黏著劑（在適當情況下，倒鉤或用螺栓固 定）之使用係較好的。在該等流量控制裝置直接引入漿液、 稀釋漿液、水或其它稀釋漿液至該硏磨墊之表面上的情況 下，該等流量控制裝置不應從該注入器突出及接觸該硏磨 墊或本身實際介入漿液分佈。 -20- 201039978 該等流量控制裝置（19)可以被裝至電源及信號繼電器 電纜（未顯示）’該等電纜通向一資料處理中心（未顯示）。有 鑑於可將所有流量控制裝置設定成在每次維持相同流速， 根據本發明可預期該等入α (2〇)間之流速可以個別變化。 本發明之一重要且必需要素係使用流量控制裝置（19)調整 在等入口（20)上之流速，以在該硏磨墊上獲得漿液之最佳 分佈、最小化廢料及同時最佳化移除率。此調整可以藉由 在任何硏磨運轉後及在另一硏磨運轉前調整該等針閥或可 〇 以在一運轉期間實施。可以藉由讓該等流量控制裝置（1 9) 中之全部或部分打開或藉由讓該等流量控制裝置（1 9)中之 一個以上之裝置部分或全部打開來實施調整。調整可能需 要一些或所有流量控制裝置（1 9)被部分打開及它們可以全 部以相同量被打開或部分被打開。調整可以改變是否任何 或所有流量控制裝置（19)被關閉或部分或全部被打開及是 否部分被打開至什麼程度。可以在運轉或在運轉期間實施 Q 調整，以及如果在運轉期間，可以在設定時間限制內或連 續地實施調整。 此外，在該間隙上方可以懸掛一感測器或一感測器陣 列（未顯示）及該感測器或該感測器陣具有電源及繼電器電 纜，其中電源及繼電器電纜轉而通向該資料處理中心（未顯 示）。能以任何次序或配置經由任何漿液入口（20)或流量控 制裝置（1 9)引入漿液、水及其它稀釋液而沒有限制，以及 該等引入流體之成分可以是固定的或隨時間變化。 -21- 201039978 可以使用任何合適旋轉硏磨工具做爲該硏磨工具。特 別地，可以使現有旋轉硏磨工具對應於本發明之裝置來作 翻新改進。可以使用任何適用於CMP中之硏磨墊（26)。此 外，可以使用任何適用於CMP中之鑽石調節盤（未顯示）。 對於漿液，可以使用任何可應用CMP漿液，以及例如， 可以使用二氧化矽基及氧化鋁基漿液中之一或兩者。 該整體新月形注入器（10)可以是由任何適用於CMP製 程之硬材料（例如，金屬、塑膠、陶瓷或玻璃）而建構成爲 〇 一由任何合適裝置所成形之整體塊組（solid block)，其藉任 何適當手段，在適當位置上或在要連結之部分中或以層方 式形成包括入口（20)、後新月緣（12)及前新月緣（34)、開口 (24)、通道或貯存槽（22)。被切割成適當形狀以包含該內部 通道或貯存槽（22)及該前新月緣（34)及後新月緣（12)之聚碳 酸酯板層（56)的構造係較好的。這是適用的，因爲聚碳酸 酯板係具成本效益也、輕的及耐用的以及因爲聚碳酸酯之 ϋ 透明度允許操作者看到漿液在使用聚碳酸酯之該內部通道 或貯存槽（22)中的狀態。在使用層（56)之情況下，可以使用 任何包括但不限於黏著劑及螺栓（80)之合適方法，以將該 等層（56)固定在一起，且螺栓（80)較佳。 使該整體新月形注入器（10)之凹後緣（12)符合該晶圓 (28)之前緣（14)的尺寸及形狀。該整體新月形注入器（10)之 後緣（12)可以在形狀及尺寸方面與該晶圓（28)之前緣（14)配 合，或者曲線可以有變化，以避免機械干擾。一配合緣緣 -22- 201039978 較佳，特別是在該間隙（42)較小的情況下。該新.月形注入 器（10)之長度（角狀物（44)之尖端間的差距）應該足以大致覆 蓋該晶圓（2 8)之前緣（14)或者依待硏磨晶圓（28)之直徑而定 是在4至18英吋間。可以使用任何成形裝置，然而，在使 用聚碳酸酯板之情況下，以切割來達成成形較佳。201039978 VI. Description of the Invention: [Technical Field of the Invention] The present invention relates to an improvement in chemical mechanical honing (CMP) using a ramming refiner having a plurality of variable honing or other fluid inlets. The method of using slurry efficiency and changing the removal rate. [Prior Art] • In recent years, chemical mechanical honing (CMP) slurries and honing pads and diamond conditioner disks have become important components for the implementation of (chemical mechanical honing) CMP processes. These honing pads and vermiculite adjustment discs have been manufactured and sold by several suppliers and are marketed to meet the standards of reliable quality and performance. The function of the slurry is to continuously transport mechanical abrasive particles and chemical components to the surface of the wafer and to provide means for removing reaction products and wafer fragments from the honing surface. A slurry having several different effects and characteristics known to the art. Currently, for the most common type of CMP tool (rotary honing machine), Q is applied to the rotating honing pad at a fixed flow rate using a simple transfer tube, nozzle or nozzle. The new slurry flows from the application point under the influence of gravity and centripetal acceleration, and is mixed with the used slurry or the slurry that passes between the honing pad and the wafer and is honed. Except for some extra chemical "depletion", the old slurry contains fragments from wafers, regulators, and pads; if the old slurry enters the gap between the wafer and the honing pad, it will cause the debris. Exposure to the wafer surface can result in increased contamination and increased defects. Therefore, it is important to remove the honed debris from the honing pad quickly by expanding the use of the slurry after the smashed 201039978 shards are generated, to the extent that it is impossible to reintroduce it under the wafer. As a result, the rotation of the pad causes the slurry to contact the leading edge of the wafer or the leading edge of a wafer retaining ring, wherein the liquid forms a bow wave at the leading edge. Some new prize liquids are now transferred to a narrow gap of 10 to 25 microns between the crystal _ circle and the honing pad for honing. The gap exists because the surface of the pad is rough, the surface of the wafer is relatively smooth, and the wafer only contacts the high point of the pad surface. However, a portion of the new slurry is maintained in the bow and is brought to the edge of the mat by the combined rotation of the honing head and the pad. The slurry is thus lost on the edge of the mat. Therefore, the actual slurry utilization (the percentage of fresh applied slurry that always applies the slurry into the gap between the rough pad surface and the wafer) is generally quite low in such rotary CMP tools. This is an important issue because slurry consumption and waste disposal account for the majority of the cost of ownership and operation of a CMP tool. Q Because when honing a wafer, the technique typically removes the spent slurry of the CMP pad between wafers by applying deionized water to the pad (usually applying this water to the center of the pad). , so there is an additional impact on the rate and uniformity of honing removal. The time between removing a wafer and replacing it with a second wafer is very short, and when the honing of the new wafer begins, a large amount of water is always left on the mat. Such a water system is unevenly distributed, and as a result, it dilutes the newly added slurry in an uneven manner, resulting in a general decrease in the removal rate due to the dilution of the slurry, 201039978, and a concentration of the slurry on different portions of the pad. The difference is evenly removed. Since this effect lasts for a few seconds, it has a significant negative effect on any part from 25% to 50% of the time between wafer turns, resulting in significant and costly reductions in production performance and production quality. To facilitate the flow of the slurry or into the underside of the wafer, practitioners of the art have used trenches in the CMP pad. This effectively confirms that the slurry reaches the pad-wafer interface, yet still leaves most of the slurry to be padded and is never used. Slurry is expensive and the CMP process f) I must include means, equipment and procedures for providing and removing large amounts of slurry which can complicate and hinder the process. Currently, there is no effective way to substantially reduce the slurry used or to ensure that most of the slurry introduced into the pad during CMP is actually used between the pad and the wafer and before being thrown away from the pad. In addition, there are effective methods for preventing the new slurry from being contaminated by water, old slurry or debris before the applied new slurry can enter the gap between the wafer and the gap. Moreover, there is currently no method available to optimize the slurry concentration in the pad to minimize variations in the removal rate from the wafer. As noted above, the solution to these problems today is to arrange trenches in the CMP surface to introduce portions of the slurry below the wafer during CMP honing. In USP 5,216,843 (Breivogel et al., "Publication: September 24, 1992"), "for the purpose of honing a film", "The device includes" "a pad" If the rate is not grinded, this will be transferred to the technical security. This amount will be entered, and the amount will not be released or the same part will be less than the pad. The cover will cover 201039978. The workbench has an upper surface. A plurality of pre-shaped grooves have been formed in the surface. The pre-shaped grooves generate a plurality of corresponding point contacts on the pad/substrate interface to facilitate the honing process." and "a means Providing a plurality of microchannel trenches in the upper surface of the pad while honing the substrate, wherein the microchannel trenches facilitate the raft by transporting the slurry between the substrate and the pad Grinding process." In USP 7175510 (Skyopec et al., "Phase: April 19, 2005") (described herein for reference), describes a method of honing, wherein "the honing pad has Transfering the groove of the slurry between the wafer and the honing pad and from the The wafer removes excess material to allow efficient honing of the surface of the wafer.” Recently, as Skyopec et al. proposed, the amount of slurry introduced between the pad and the wafer was maximized. The preferred method is that the preparation of such trenches and the efforts of those skilled in the art are limited to ensuring that these "microchannels" are regenerated or maintained in a suitable manner. U.S. The effect. However, the above does not solve the problem of waste of new slurry caused by accumulation of the slurry into a bow wave or removal of the uniform rate of honing. In addition, Novellus Systems Inc. It has been proposed to deal with the problem of slurry utilization by orbital polishers (USP 6500055, which is incorporated herein by reference), in which the slurry is directly injected under the wafer via the honing pad (USP 5 5 54064) I am referring to this article for the 201039978 exam). This ensures high slurry utilization, but requires a complex platform and custom pad to accommodate the plasma distribution system and special honing tools to take advantage of this injection method. Similarly, in US 2007 0281592, the disclosure of which is incorporated herein by reference in its entirety in its entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire disclosure It is not intended and does not effectively improve slurry utilization by directing large pieces of debris between the wafer and the CMP pad. Also, in U.S. Patent No. 5,964, 413, the disclosure of which is incorporated herein by reference. This is a means for spraying the slurry onto the pad rather than pumping it to a specific location on the pad-wafer interface and does not provide the desired benefits sought by the present invention. In addition, U.S. Patent No. 6,929,533, the disclosure of which is incorporated herein by reference in its entirety, is incorporated by reference. This patent describes the use of a slurry distribution tube with multiple nozzles to distribute the slurry over the entire wafer track, thereby improving the honing rate uniformity of the Q-rotating and linear honing machines. The slurry distribution tubes are located above the mat and are not in contact with the mat. When compared to the present invention, this method lacks the advantageous effect of producing a slurry layer having the same thickness as the wafer-pad gap, wherein the advantageous effect is essentially to move a large amount of new slurry to the first time. Below the mat. A cleaning and slurry dispensing system assembly for use in a chemical mechanical honing device is taught by USP 6,283,840, the disclosure of which is incorporated herein by reference. The apparatus has an outlet for dispensing slurry to the enclosed area to form a reservoir of slurry in the closed area 201039978, wherein the slurry travels under the honing surface and the retainer The surfaces are assigned to an area that is not enclosed by the holder. However, there is no teaching that the slurry is applied to specific land areas where slurry is required, and in fact, most of the slurry is lost through the grooves between the land regions, where the grooves are in the wafer and honed The cross-sectional area of the mat is generally greater than the area of the shore. This device also does not teach or achieve a function of controlling the flow rate as a radius from the center of the honing pad, and does not teach or describe the separation of the old spent slurry, mash dilution water or honing waste from the most recently applied slurry. The main function achieved by the device is to control the spraying of the slurry or detergent not to deposit on the honing machine, and the residue on the honing machine becomes a source of defective contamination. The above has been mentioned several times in the specification. BACKGROUND OF THE INVENTION In the last paragraph, reference is made to reducing the consumption of slurry over time, but the patent does not teach the device to accomplish this or how to do so. USP 5 997 392 teaches slurry injection techniques for chemical mechanical honing. The slurry application method comprises spraying the slurry from a plurality of nozzles onto the mat under pressure, however, the invention suffers from the same disadvantages as USP 6929 5 3 3 (hereby incorporated by reference) because of the configuration of the slurry and The lack of accuracy in forming substantially reduces its effectiveness. U.S. Pat. Beach slurry. It does not describe a special 201039978 method for making the collected slurry more efficiently enter the pad-wafer gap. U.S. Pat. A seal having a material that is unaffected by the chemical action of the honing slurry is disposed around the interface of the mats, and the bead is extruded and formed when the mats are assembled A gasket and upwardly bending the periphery of the upper pad produces a bowl-like reservoir for increasing the residence time of the slurry on the surface of the pad prior to overflowing the pad. U.S. Patent No. 3,342,652, the disclosure of which is incorporated herein by reference in its entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire portion A liquid flow of ~ liquid layer is formed between the wafers. The solution is applied by a dispensing bottle and tangentially applied to a wafer-plate assembly to provide maximum cleaning of the honing cloth to remove discarded • etch products . U.S. Patent No. 4,549,374. (Refer to this document for reference) A special formulated abrasive slurry for honing semiconductor wafers, including montmorillonite clay in deionized water. CMP teaches a slurry automated slurry distribution system in which a "one-side refining slurry dispensing device" is configured to dispense the slurry into the pad to a flow preferably as a liquid stream, in US Pat. No. 6,84,092, the disclosure of which is incorporated herein by reference. Or better it is a droplet of the surface of the mat and a curtain of air to penetrate the slurry on or near the surface of the honing pad. The slurry is honed using less slurry than a conventional honing device while still maintaining the The honing rate and honing uniformity of a conventional honing device. A preferred dispenser has an internal length of a slurry tube and an air tube. -10- 201039978 Strip containers 'Each tube has along its longitudinal axis a plurality of air ports, preferably arranged radially and at least half of the diameter. Preferably, in the form of droplets, the slurry from the slurry tube toward the pad and the air from the air tube form an air curtain Preferably, the slurry is sprayed on or slightly above the surface of the mat to form a mist." Although the system evenly distributes the slurry, the thickness of the slurry layer on the leading edge of the wafer is such that the gap is implemented. . USP 6398627 teaches a multi-adjustable adapter. In the teachings of the art, a slurry dispensing unit for use in the assembly of a plurality of slurry dispensing nozzles is disclosed. The elementary system is composed of a dispenser body and a plurality of nozzles, the body having a transport conduit, a return conduit and a U-shaped Q fluid communication connection to each other for moving a slurry solution; and the plurality of nozzles are in fluid communication Integrating the fluid passages in the delivery conduit to dispense a slurry slurry dispensing nozzle can have a fixed opening or an adjustable opening in each nozzle opening. This patent and the art do not have features that ensure that the wafer edge is at the same level as the wafer-pad gap. U.S. Patent No. 6,429,131, the disclosure of which is incorporated herein by reference in its entirety, the entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire portion portion The slurry is dispensed from the slurry distribution unit wherein the distributor conduits are continuously connected to one of the solutions therebetween. The plurality of flow control is as thick as the CMP uniformity of the previously proposed slurry layer 201039978 and teaches improved CMP uniformity achieved by providing improved control of slurry distribution. Improvements in slurry distribution are achieved, for example, by using a slurry dispenser for dispensing slurry from a plurality of dispensing points. Providing a squeeze bar between the slurry distributor and the wafer to redistribute the hair solution can also improve the slurry distribution. This invention allows for uniform distribution of the slurry on the mat, but does not provide a uniform slurry layer with the thickness of the gap. Finally, in the U.S. Patent Application Serial No. 1 2 262,5, the entire disclosure of which is incorporated herein by reference in its entire entire entire entire entire entire entire entire content The overall crescent-shaped injector is such that the concave trailing edge of the integral crescent injector conforms to the size and shape of the leading edge of the honing head with a gap of 1 inch, and the overall crescent injector is lightly placed thereon a pad and a lower surface thereof facing the pad, the CMP slurry or a component thereof being directed through the one or more openings in the top of the injector via the integral crescent injector, the device being passed through a channel or storage tank The length reaches the bottom, where the CMP slurry or its components flow out of the plurality of openings in the bottom of the injector, D and along a front edge of the wafer on the surface of the honing pad in a sufficiently small amount The interface of the wafer introduces the CMP slurry or its components, thereby introducing all or most of the slurry between the wafer and the honing pad. This solves the problem of slurry introduction, i.e., relatively free from contamination by waste slurry, excess dilution water, or honing debris entering the gap between the wafer and the mat. Although the creation and maintenance of trenches and microchannels is important for the operation of CMP honing, they still do not provide an effective means of introducing a slurry between the pad and the wafer, whereby it will be introduced to most of the pad. Or even a -12-201039978 substantial portion of the slurry is introduced between the mat and the wafer. Moreover, although a number of methods have been devised to evenly spread the slurry onto the pad, no method has been taught to prepare a slurry layer of suitable thickness for smooth entry into the pad-wafer gap. Most of the slurry continues to accumulate in the form of a slurry wave at the leading edge of the wafer, and most of the slurry moves outward along the leading edge and is thrown away from the edge of the pad and wasted. In addition, the contaminated used slurry under the wafer returns with the rotation of the pad and mixes with the new slurry at the bow wave, thereby significantly reducing the quality of the slurry used in the actual CMP. Significantly increased waste. Finally, these methods of the prior art do not reduce the negative impact on material removal and uniformity of residual slurry wash water added between wafers. Furthermore, the apparatus and method of the present invention inject the slurry into the slurry. The gap between the wafer and the pad, but the method disclosed above does not effectively ensure that the slurry is evenly distributed to the gap between the wafer and the pad. This results in a non-uniformity in the honing of the wafer. SUMMARY OF THE INVENTION The present invention is a method for injecting slurry into a chemical mechanical honing of a semiconductor wafer between the wafer and the pad using the apparatus described in U.S. Patent Application Serial No. 2,262,579 Including an integral crescent injector "the concave edge of the integral crescent injector is 〇 to 1 inch gap conforms to the size and shape of the leading edge of the honing head, and its lower surface faces the 塾' The integral crescent injector is lightly resting on the pad, and the CMP slurry or its components are directed through the one or more openings in the top of the injector via the integral crescent injector to pass through a channel or storage tank The length of the device is -13 to 201039978 and reaches the bottom portion. Here, a plurality of openings in the CMP slurry portion flow out, and the CMP slurry or its component at the leading edge of the wafer is spread over the wafer, thereby further rounding A more uniform removal rate is obtained between the honing pad, where the opening is utilized and installed to control the amount, and a uniform splitting circle is obtained during honing or on the land portion of the pad. More particularly, the present invention relates to a plurality of openings for injecting slurry into the wafer and the slurry by honing and adjusting the devices during or after the same concentration of slurry or diluent or other flow milling, a uniform distribution The new slurry, in turn, is at a zero rate, wherein such an introduction method is used to integrate the slurry distribution over the different portions of the slurry storage tank for the flow control device. [Embodiment] The inventors of the present invention have sought an effective use and a film on the pad to ensure that more new slurry is transferred to the liquid or a component thereof from the bottom of the injector and a sufficiently small amount Adjusting the devices after the introduction of the slurry or the majority of the slurry into the interface of the surface and the wafer is introduced into the flow of the slurry to a plurality of different concentrations of slurry or diluent introduced by the device, to transfer the new slurry in the cloth. And a method in which the entire crystal is used in a chemical mechanical pad of a semiconductor wafer, wherein a device for controlling a flow rate for controlling a plurality of openings is used, and the entire wafer is obtained on a land portion of the pad Obtaining a more uniform shift in a feedback loop in combination with a conditioning device, so that the concentration of the slurry can be adjusted to improve the more efficient introduction of the slurry into the slurry during the CMP process. The distribution below the circle and the slurry is uniform from 14 to 201039978 to improve uniformity in honing of the wafer surface. More particularly, the inventors of the present invention have devised a method of adjusting the flow of slurry and diluent through a plurality of openings on the top of the injector described in U.S. Patent Application Serial No. 1,262,579, The distributed slurry is injected onto the mat, and even more particularly, a sensor is designed to measure the system to determine the distribution of the slurry and/or the honing system is uniform and to adjust them quickly and efficiently without uniformity. And feedback system. The device more particularly includes an integral crescent shaped injector such that the concave trailing edge of the unitary crescent shaped injector is dimensioned with a leading edge of the wafer or honing head disposed to have a gap of 1 to 1 inch Consistently in shape, the integral crescent injector is lightly resting on the honing pad, the lower surface of the integral crescent injector facing the honing pad being substantially flat and parallel to the surface of the honing pad and Contacting it, and a plurality of tubes with the integral crescent injector attached to the source of the slurry or slurry component (which may be a standard slurry supply system) and the other end to the inlet in the top of the injector Introducing a CMP slurry or a Q component thereof, and the CMP slurry or component thereof passes through an internal distribution channel or storage tank extending the length of the integral crescent injector and over the portion of the honing pad that is contacted by the wafer And passing through the bottom of the integral crescent injector, where the slurry flows out of the plurality of openings in the bottom of the injector, dispersing the CMP slurry or its dispersion on the surface of the honing pad in the form of a film, and Small enough A quantity of the CMP slurry or a component thereof is introduced between the surface of the honing pad and the wafer along the leading edge of the wafer to ensure that all or most of the slurry is introduced between the wafer and the honing pad and introduced to A plurality of lines on top of the crescents -15-201039978, in particular valves (more particularly adjustable needle valves) for controlling the flow of slurry or diluent or other fluid to the chamber To a sensor system (particularly a system for observing the concentration of slurry on the surface of the pad between the trailing edge of the injector and the leading edge of the wafer). The method of the present invention has been developed in response to the current state of the art and, in particular, to the problems and needs fully addressed by the currently available CMP slurry supply systems that are not used in CMP tools in the art. Accordingly, it is a general object of the present invention to provide a 〇 ' CMP slurry injection method for removing the disadvantages of the prior art. The purpose of this method is to allow the slurry to be injected more efficiently into the space between the honing pad and the wafer, and to adjust the injection to achieve optimal conditions when the implantation is not optimal, so that the movement is improved. In addition to the uniformity of the rate, the use of the slurry can be optimized. The CMP slurry should be untreated (pre-released) to better ground and planarize the metal surface of the wafer used for semiconductor Q wafers such as germanium wafers or germanium compound wafers. The wafer has been plated with copper or tungsten and, afterwards, planarizes the semiconductor surface itself. In principle, when the old slurry or water is allowed to be mixed with the new slurry on a large scale and an uncontrolled amount and a large amount of this mixture are removed from the honing pad and not used under the wafer, there is a substantial essence of the slurry. Waste and ultimately no slurry found below the wafer is completely inefficient. Moreover, the uncontrolled release of the slurry results in non-uniformity in the rate of honing. However, the particularly controlled release of the slurry on the injector results in a uniform flow of slurry so that the amount of slurry below each portion of the leading edge of the wafer can be adjusted or adjusted. To suit the needs of the honing process. Manufacturers and users of CMP pads need to minimize the consistency of slurry waste and maximum slurry injection efficiency and the amount of slurry applied to achieve maximum cost benefits and wafer quality. In addition, manufacturers need to achieve reasonable uniformity of removal rates on the entire wafer as much as possible. In the art, the problem of unevenness in surface rate removal for different regions of the wafer in CMP has been known for some time due to the problem of uniform flow or distribution of slurry. In addition to using a plurality of openings for introducing slurry to the device and for installing the plurality of openings to control the flow of different concentrations of slurry or diluent or other fluid, and adjusting the devices during or after honing to In addition to obtaining a uniform distribution of new slurry on the shore area of the honing pad, which in turn achieves a more uniform removal rate across the wafer, the present invention ensures that the new slurry is ultimately in the wafer and the raft The gap between the pads is not a bow wave before the front edge of the wafer (if there is not much, there is a lot of new slurry that has never been used because of the centripetal force being thrown away from the edge of the pad) Neutralizing and maintaining the slurry to the wafer along the leading edge of the wafer in a quantity and position that facilitates uniform honing of the wafer surface to maintain the used slurry on the surface of the honing pad and The residual water is separated from the entity of the newly added slurry to overcome the problems of the prior art. Through the use of the slurry injector of the present invention, consistent, efficient, and small-scale use of the slurry with a large uniformity of proper distribution and removal rates can be easily achieved to improve the quality of the honed wafer. All dimensions of the parts of the present invention are based on wafer sizes between diameters from 20" to 30" and diameters between [8"] and [12", and, if desired, The variations in the dimensions of the wafers change them in a proportional manner. There is no limitation to the particular dimensions provided herein, but rather an exemplary embodiment of the invention is illustrated by way of example. The invention includes a method for The method of effectively introducing a slurry between the wafers, and at the same time, the method substantially removes the waste of the slurry of the conventional CMP honing method; allowing at any time to be adjusted to the optimum for wafer honing uniformity. The amount uses a pure unused and undiluted slurry on the surface of the honing pad; and additionally allows the operator of the CMP honing device to have significant control over the introduction of slurry between the wafer and the honing pad. More specifically The present invention includes a method for injecting slurry into a chemical mechanical honing of a semiconductor wafer between the wafer and the honing pad using the apparatus of U.S. Patent Application Serial No. 2,262,579, which is incorporated herein by reference. Including an integral Q crescent injector (10), the concave trailing edge (12) of the integral crescent injector (10) and the wafer (28) having a gap (42) between 〇 and 1 inch The front edge (14) is uniform in size and shape; the injector (丨〇) is lightly resting on the honing pad (26); the lower surface (16) of the injector (10) is substantially flat and parallel to The surface of the ram (26) is immersed on the surface (36); and the CMP slurry or a component thereof is loaded to the flow control device U9 by the injector (1) and additionally attached to the integral crescent injector ( 10) The plurality of tubes (18) of the inlet (20) in the top (76) or other suitable conveying device are introduced and flow through a passage or storage tank (22) having the overall new moon -18-201039978 shaped injector (10) the length to the bottom of the channel or storage tank (22) (78), where the CMP slurry or its constituents are passed through a plurality of bottoms (16) of the integral crescent injector (10) The opening (24) flows from the integral crescent injector (10) and is compressed and spread into a film between the bottom (16) of the integral crescent injector (10) and the honing pad (26) Preferably, the surface (36) of the honing pad (26) is joined to the wafer (28) by a sufficient amount and along a leading edge (14) of the wafer (28). Introduced into the "shore" _ (30) region between the grooves (32) in the pad to introduce all or most of the slurry into the wafer (28) and between the honing pad (26) The used slurry is more effectively separated from the newly injected plasma by its concentration in the second bow wave (46) on the leading edge (34) of the integral crescent injector (10). If multiple inlets (20) for the slurry or fluid are used, these inlets may all have the same or different sizes, capacities or configurations. In one embodiment of the invention, a primary slurry inlet and a plurality of other inlets are used. Each of the inlets (other than the main slurry inlet) can carry a slurry or they can carry water or other diluent or fluid in any combination or configuration. In one embodiment of the invention, the (or) main slurry inlet introduces slurry to the injector and the remaining inlets introduce water or other diluent or fluid to the injector. In this embodiment, it is preferred to introduce a dilute slurry or a water system and a water introduction system by means of the other inlets. The number of such additional inlets is not particularly limited and in the case where the injector is fitted with a passage, the additional inlets (20) may allow direct introduction of slurry, dilution of slurry, water or other diluent into the passage or some or all of Such an inlet may bypass the passage toward the leading or trailing edge of the slurry -19-201039978 and allow direct introduction of slurry, dilute slurry, water or other diluent to the surface of the honing pad. However, the injector can be fitted with a second parallel distribution channel 'however' this will create additional complexity, making adjustment of the application of the slurry to the honing pad more difficult and possibly reducing the viscosity of the particularly low viscosity (eg ' Locally applied control of water). In various embodiments of the invention, all inlets may directly enter the passage, all inlets may directly supply fluid to the surface of the honing pad via the lower surface of the injector, or any combination of inlets may be used. In the case of using one channel, the introduction of at least some of the undiluted slurry is better and the introduction of all of the undiluted slurry to the channel is better. In this case, some or all of the diluent can be introduced directly into the honing surface via the inlet below the injector. The number of such inlets (including the first or main undiluted slurry inlet) is not particularly limited 'but 1 to 20 inlets are better, 3 to 10 inlets are better, and 5 to 8 inlets are best. of. can. So that any or all of the inlets (20) are fitted with flow control devices (19). There is no special restriction on the means for producing such an inlet and any suitable means can be used. However, it is preferred to prepare the inlet (20) by drilling through the injector. The tubes (18) and flow control devices (19) can be attached to the inlet by any suitable means, and the use of an adhesive (and, where appropriate, barbs or bolts) is preferred. Where the flow control devices directly introduce slurry, dilute slurry, water or other dilute slurry onto the surface of the honing pad, the flow control devices should not protrude from the injector and contact the honing pad or itself. Involved in the distribution of the slurry. -20- 201039978 These flow control devices (19) can be mounted to power and signal relay cables (not shown) that lead to a data processing center (not shown). In view of the fact that all flow control devices can be set to maintain the same flow rate each time, it is contemplated in accordance with the present invention that the flow rates between the inputs (α) can vary individually. An important and essential element of the present invention is the use of a flow control device (19) to adjust the flow rate at the equal inlet (20) to achieve optimum slurry distribution, minimize waste, and simultaneously optimize removal on the honing pad. rate. This adjustment can be performed during an operation period by adjusting the needle valves after any honing operation and before another honing operation. Adjustments may be made by having all or part of the flow control devices (1 9) open or by having one or more of the flow control devices (1 9) partially or fully open. Adjustments may require some or all of the flow control devices (19) to be partially opened and they may all be opened or partially opened in the same amount. Adjustments can change to what extent any or all of the flow control device (19) is turned off or partially or fully turned on and partially opened. Q adjustments can be implemented during operation or during operation, and if during operation, adjustments can be implemented within set time limits or continuously. In addition, a sensor or a sensor array (not shown) may be suspended above the gap and the sensor or the sensor array has a power supply and a relay cable, wherein the power supply and the relay cable are turned to the data. Processing center (not shown). Slurry, water, and other diluents can be introduced via any slurry inlet (20) or flow control device (19) in any order or configuration without limitation, and the components of the introduced fluid can be fixed or varied over time. -21- 201039978 Any suitable rotary honing tool can be used as the honing tool. In particular, existing rotary honing tools can be retrofitted to correspond to the apparatus of the present invention. Any honing pad (26) suitable for use in CMP can be used. In addition, any diamond adjustment disc (not shown) suitable for use in CMP can be used. For the slurry, any applicable CMP slurry can be used, and for example, one or both of a ceria-based and alumina-based slurry can be used. The integral crescent injector (10) may be constructed of any hard material suitable for use in a CMP process (eg, metal, plastic, ceramic, or glass) as a monolithic block formed by any suitable device (solid block) ), by any suitable means, in the appropriate position or in the part to be joined or in a layered manner including the inlet (20), the rear new moon edge (12) and the former new moon edge (34), the opening (24) , channel or storage tank (22). The structure of the polycarbonate sheet layer (56) which is cut into a suitable shape to include the inner passage or storage tank (22) and the front crescent edge (34) and the rear crescent edge (12) is preferred. This is applicable because the polycarbonate sheet is cost effective, light and durable, and because the transparency of the polycarbonate allows the operator to see the internal passage or reservoir of the slurry in the polycarbonate (22) The state in . Where a layer (56) is used, any suitable means including, but not limited to, an adhesive and a bolt (80) may be used to secure the layers (56) together, and the bolts (80) are preferred. The concave trailing edge (12) of the integral crescent injector (10) conforms to the size and shape of the leading edge (14) of the wafer (28). The trailing edge (12) of the overall crescent injector (10) can be matched in shape and size to the leading edge (14) of the wafer (28), or the curve can be varied to avoid mechanical interference. A mating edge -22- 201039978 is preferred, especially if the gap (42) is small. The new. The length of the moon injector (10) (the difference between the tips of the horns (44)) should be sufficient to substantially cover the leading edge (14) of the wafer (28) or the diameter of the wafer (28) to be honed. It is between 4 and 18 miles. Any forming device can be used, however, in the case of using a polycarbonate plate, it is preferable to achieve the forming by cutting.
該晶圓（28)與該整體新月形注入器（1〇)之後緣（12)間之 距離在最寬點上應該高達1英吋。該整體新月形注入器（10) 之前緣（34)可以是新月形或矩形形狀或可以是任何對CMP 〇 製程有最低限度干擾之其它合適形狀，同時允許在使用聚 碳酸酯之該漿液通道或貯存槽（2 2)中有充分容量，以及產 生一適當第二弓形波（46)，以在與新的未使用漿液混合前 從該硏磨墊（2 6)移除用過的漿液。 該整體新月形注入器（10)倚靠在該硏磨墊（26)上之負 荷係在1至10英磅間或更大及通常足以施加充分壓力，以 致於該整體新月形注入器（10)之下表面（16)與該硏磨墊（26) Q 間之平均間隙（42)在一小的倍數內可相比於該晶圓（28)與 該墊（26)間之平均間隙（42)。後者常常經測量在10至25微 米間，但是較大或較小間隙（8 2)亦是可能的。 雖然依據需要而定，該整體新月形注入器（10)面對該 硏磨墊（26)之下表面（16)可以具有特定結構的、開槽的或成 形的，但是它係平坦的且平滑的。雖然在需要的情況下， 可使螺距（pitch)或傾斜（bank)變動，但是該下表面（16)實質 平行於該硏磨墊（26)之表面（36)。可藉由該整體新月形注入 -23- 201039978 器（10)之下表面（16)的平坦化調整該間隙（82)。經由在其頂 部（76)中之一個或多個開口（52)將該CMP漿液或其成分引 入至該整體新月形注入器（10)。沒有限制在該下表面（16) 中之開口（24)的數目及尺寸，但是0.01至0.125英吋間之 直徑係較好的及40至160個開口（24)較佳。較佳是，該 等開口（24)在位置及數目方面對應於該硏磨墊（3 6)上之「岸 部」（30)區域，以及更佳的是，在每一「岸部」（30)區域上 方放置一開口（24)。沒有限制該等開口（24)之線性配置，但 〇 是它們沿著直線或曲線來配置較佳。該等開口（24)應該放 置在任何位置上及彼此之分開距離對於它們而言適合於直 接在該硏磨墊（36)之岸部（30)上方。 沒有特別限制將漿液、水及其它稀釋液或流體引入該 整體新月形注入器（10)之裝置，但是一連接至該CMP工具 之漿液或水或其它稀釋液供應系統的管（18)較佳。可以藉 由任何合適裝置將該（等）管（18)裝至該整體新月形注入器 Q (10)，但是一速接聯結器（54)較佳。對於在該整體新月形 注入器（10)之頂部中的主漿液入口（20)之定位，可以使用任 何定位或樣式，但是一符合該半徑（該硏磨墊（26)在該半徑 處之點在該晶圓（28)下方具有最長過渡時間）之位置較佳。 沒有特別限制本發明之流量控制裝置（1 9)。可以使用任何 適用以控制在一包括泵及閥的管中之漿液的流量之裝置。 一用於一些或所有管（18)之針閥的使用較佳。該針閥之位 置沒有被限制及可以在該等管（1 8)之任何位置上，但是在 -24- 201039978 該管（18)與該漿液入口（20)內部間固定該針閥之一端較 佳。如在此所述，該等針閥或其它流量控制裝置之位置可 以是進入該通道或直接穿過該注入器至該硏磨墊。沒有特 別限制該等流量控制裝置或針閥沿著該注入器之分佈，但 是如在此所述，較佳係它們能以任何樣式來均勻地隔開或 分佈及一均勻隔開分佈。可以藉任何合理裝置來控制該針 閥，且操作者可以手工地或機械地控制它們或者機械地受 機器人或電腦控制。 〇 當定位該（等）入口（20)時，應該考量該通道或貯存槽 (2 2)之尺寸及是否它是一窄的通道或貯存槽（2 2)。 該整體新月形注入器（10)可以藉由任何合適手段來製 成，但是可以由一方法來製成，藉此該整體新月形注入器 (10)係由3層（56)成形或切割硬材料所構成，以及藉由任何 合適手段而連結在一起之3個聚碳酸酯板較佳。該等層（5 6) 可以是相同或不同厚度及任何厚度，該厚度沒有薄到會導 Q 致整體新月形注入器（10)太弱而無法忍受CMP硏磨之嚴厲 考驗或沒有厚到笨重及不適用的程度，以及一均勻層（56) 具有每一層0.17英吋厚較佳。 在使用該等層（5 6)之情況中，它們可以是均勻厚度， 或它們可以是斜面的（特別是中間層）（如果使用一通道或貯 存槽（22))，以期望在此情況中產生一具有不同厚度之通道 或貯存槽（22)。具有均勻厚度之層（56)較佳。用以引入漿 液至該注入器之下表面的管線或通道（22)可以是一穿過該 -25- 201039978 注入器之直接通道、可以是分支的或可以包括一特別是藉 由去除在該3層情況中之中間層（8 6)的更大範圍部分所產 生之通道或貯存槽（22)。在使用這樣的通道或貯存槽（22) 之情況中，該通道或貯存槽（22)之形狀可以相同於該整體 新月形注入器（10)之基本形狀或者它可以是一卵形物或卵 形體或一簡單通道或任何其它合適均勻形狀。該通道或貯 存槽（22)在任何一端上應該具有放氣閥（88)，以在引入漿液 時去除空氣。 最好在進入該整體新月形注入器（10)前，可以加入一 流量計或其它合適感測器，以監控漿液流量。 在使用一通道或貯存槽（2 2)之情況下，一在該注入器 之中心上具有一實質卵形的貯存槽或一具有離該整體新月 形注入器之外側界面（14)(34)爲固定距離之側面界面（90)的 通道或貯存槽（22)較佳。 該通道或貯存槽（22)之上表面（60)及下表面（62)可以是 Q 平行的且平坦的、相對於彼此可以具有一微小面間夾角或 可以是輕微圓形的。該通道或貯存槽（2 2)之平行且平滑上 表面（60)及下表面（62)較佳。 在該整體新月形注入器（10)之下表面（16)中的開口 (24)(漿液經由該等開口（24)離開該整體新月形注入器（10)) 可以是任何形狀及尺寸，然而圓形或卵形形狀較佳，且圓 形更佳。該等出口（24)之直徑可以是任何直徑，但是對於 在該整體新月形注入器（10)上之總共68個開口（24)而言， -26- 201039978 約0.0625英吋之直徑較佳。可以使等開口（24)垂直於該下 表面（16)或成某一角度。該等開口（24)可以藉由任何合適手 段所製成，但是鑽孔較佳。可以使用任何定位及樣式，但 是對應於岸部（30)區域之半徑及沿著該整體新月形注入器 (10)之後緣（12)的曲線且在該曲線前有約1/4英吋之開口 (24)的曲線間隔較佳。 關於該（等）入口（20)離該硏磨墊（26)之中心的徑向距 離，經由該整體新月形注入器（10)之漿液的流速受該（等） f) I 入口（20)之位置的影響。結果，可以調整該（等）入口（20)之 位置以及該等入口（24)之尺寸、形狀、入射角及密度樣式， 以最佳化流量狀況。藉由重力流或藉由泵取可以將漿液引 入該整體新月形注入器（10)中之通道或貯存槽（22)。如果藉 由泵取來引入，則沒有限制速率，但是對於68個開口（24) 有約50ml/min或以上或者每一開口（24)有約〇.73ml/min或 以上之速度較佳。 Q 藉由任何合適裝置可在該硏磨墊（26)上維持該整體新 月形注入器（10)位置，但是具有桿（66)的樑（64)較佳，其 中該整體新月形注入器（10)裝至該桿（66)。該樑（64)或桿（66) 應該足夠強固’以禁得起該CMP製程之嚴格考驗，以及應 該具有0.25英吋至0.75英吋間之直徑或厚度。不銹鋼做爲 它們的成分材料較佳。該整體新月形注入器（10)應該可從 該桿（66)拆除’以便在磨損時，可清洗或取代該整體新月 形注入器（10)。上述亦允許具有對應於不同硏磨墊（36)溝槽 -27- 201039978 幾何之不同孔樣式的整體新月形注入器（ίο)之轉接。 在本發明中該整體新月形注入器（10)與該桿（66)或其 它支撐裝置間之接觸點係萬向連接的（68)，以便可以稍微 調整或移動該整體新月形注入器（10)之螺距及傾斜。可以 藉由任何合適裝置（例如，固定螺釘（74))將該桿（66)之上 端固定至該CMP工具之支撐機構。在旋緊該桿（66)用之固 定螺釘（74)前，可以使用一組合彈簧（70)與軸環（72)施加固 定之負荷，或者在旋緊該固定螺釘（74)前，可以在該整體 〇 新月形注入器（10)之上表面（76)上配置重錘（50)，以施加荷 負。該軸環（72)係藉一個別固定螺釘（73)固定至該桿（66)。 可以裝上一合適負荷感測器，以在操作期間確定該負荷。 當泵取漿液（或根據情況可以是水或其它稀釋液或流 體）至該整體新月形注入器（10)時，可以使用任何合適流 速，例如，能以每分鐘30-300cc之速率泵取.紫液或水或其 它稀釋液或流體。 Q 在該整體新月形注入器（10)與該桿（66)間之連接點上 的萬向接頭裝置（68)可以是任何允許該螺距及傾斜角之調 整而不允許以該桿（66)之軸爲中心旋轉的合適萬向接頭裝 置（6 8)。上述可以是一固定調節器或可以允許該整體新月 形注入器（10)自然地調整，以致於它可以平放在該硏磨墊 (26)表面（3 6)上。此萬向接頭（68)特徵允許操作者產下非常 薄漿液膜，且如此做亦可有效地分離在該整體新月形注入 器（10)之前緣的弓形波（46)中的用過漿液，而在該整體新月 • 28 - 201039978 形注入器（10)位於該硏磨墊（2 6)上或上方時’不會失去該整 體新月形注入器（10)之底部（16)的平面定向。 在本發明中所使用之感測器或感測器陣列（25)可以是 能在硏磨期間即時準確地觀測及記述各岸部（30)上漿液量 之任何感測器或感測器陣列。可觀測較新漿液之較低溫度 的紅外線感測器較佳。 本發明之方法可以是任何方法，藉此可以調整在該等 管（18)上之流量控制裝置（19)，以最佳化或否則操作該墊 〇 (3 0)之前緣前該墊之岸部（10)上的漿液濃度，以便最佳化漿 液耗損及最大化移除率之均勻性。沒有特別限制用以決定 漿液輸出之最佳化及移除率之均勻性的最大化之手段，然 而，可以使用目視檢查及感測器檢査及感測器檢查對於漿 液觀測係較好的及一反射計之使用對於移除率之測量係較 好的。操作者決定要調整該等流量控制裝置有多少或可以 由一軟體常式來自動決定。一軟體常式較佳。沒有特別限 Q 制該實際調整及該實際調整可以是自動的或人工的及自動 較佳。 當硏磨開始及漿液注入開始時，該等流量控制裝置（1 9) 之初始設定可以根據經由該等管（18)之稀釋液的等流速或 者一些其它剩餘設定可以根據經驗或計算。該等流量控制 裝置（19)之調整可以是連續的或同時的或其組合（例如，同 時所調整之被選流量控制裝置的群組）及可以是連續的、間 隔的或在該運轉完成後及在下一運轉前。藉由在該資料處 -29- 201039978 理單元上記錄該等調整及反應，可以累積針對某些晶圓、 漿液及條件之大量資料體。 雖然可以使用以水或某些其它水溶液或單純水或某些 其它合適流體稀釋之漿液，但是沒有限制本發明之稀釋液 的明確成分。應該可看到在使用多個漿液入口（20)或具有 額外流量控制裝置（19)之漿液入口（20)的情況下，可以經由 多個漿液入口（20)或流量控制裝置（19)施加在CMP中所通 常使用之相同濃度的相同漿液。這樣的多入口（20)及流量 f) 控制裝置（1 9)具有一 ·個以上之效果。除了允許使用可能改 變該漿液之黏性或化學成分或活性之稀釋液的使用之外， 它們亦用以允許漿液注入該注入器之遠離該主漿液入口之 部件，以及甚至當沒有使用稀釋液及漿液之濃度在整個該 注入器通道係相同的及因而黏性係相同的時候，此對流經 該注入器之不同部件的漿液會有顯著衝擊。在該替代中， 當在該注入器之整個本身上放置這些額外入口時’雖然在 Q 該通道本身中之漿液的移動或濃度不再受影響，但是改變 在該墊之表面上漿液之濃度，轉而選擇性地改變在該墊上 之漿液的活性及造成移除率之改變。在此情況中’雖然沒 有影響通過該注入器通道之不同部件的漿液量’但是響 在輸送後之漿液濃度。重要的是，可控制在該墊上之漿液 濃度及因而控制移除率。此實施例所期望的是’允許對接 觸該墊之一特定區域的水、稀釋漿液或其它稀釋液之數量 的更準確控制，此允許在某些情況中之移除率的更具體調 -30- 201039978 整。 範例 參考下面實施範例來說明本發明之實施而沒有受限。 對於下面實施範例，將一Rohm及Haas IC-10-A2 CMP 墊安裝至一 Araca有限公司APD-500 200nm CMP硏磨工具 以及亦安裝 一 Mitsubishi Materials Corporation TRD 調節調 節盤。將一具有約6.5英吋長度及0.3125英吋直徑之不銹 鋼軸滑入在一被鉗緊至該CMP工具之支撐機構的可調樑中 〇 ' 的孔中。沿著該桿在該軸環與該支撐機構間放置一彈簧， 使該彈簧壓縮，以及以一固定螺釘將該軸環安裝至該桿。 此具有將力從該彈簧經由該注入器傳送至該墊之表面的效 果。然後，使用一在該可調樑中之用於該桿的個別固定螺 釘，以安裝該桿至該支撐機構，進而固定該負荷及防止該 桿以它本身之軸爲中心轉動。 使用一手鋸一起切割3個透明聚碳酸酯板（GE Plastics Q XL10，0.17英吋厚），以產生從角至角有約10英吋且具有 —對應於一硏磨頭（直徑：11.125英吋；寬度：1英吋）之後緣 半徑的3個相同新月形狀[第1圖]，進而製成該注入器。 在靠近該等形狀之凸（前）緣的側上以約2英吋之間隔鑽出4 個螺栓孔且該等螺栓孔在中間具有約4英吋之分離，以及 在這些板中之一（下面）中，以3/8英吋直徑使該等孔凹陷至 約0.1英吋之深度，以容納壓合螺紋鋁螺帽。以穿過其它 兩個板（上面及中間）及穿過該下面板一半之方式鑽出一具 -31 - 201039978 有1/2英吋直徑之孔，以容納該萬向接頭機構。在該中間 板中，在該中間板之凹後緣前以約1/4英吋之等距在該等 角狀部之1/4英吋範圍內完全切割該板之長度，以形成一 長分配通道。該通道具有1/8英吋之寬度。 使用一以一硏磨墊之協助所構成之個別模板，以所需 可變間隔沿著該通道之路徑穿過該下層來鑽出68個孔 (1/16英吋直徑），以使該等孔與在該墊上之岸部區域對齊。 最後，在該上板中鑽出一具有3/8英吋直徑之入口，以及 〇 _ 使該入口安裝有一鋁入口管、一 4英吋剖面管子及一適用 以連接至用於該硏磨機之該管子的快速連接器。在比該通 道之前緣更靠近該注入器之前緣約1/8英吋的位置上以一 致間隔鑽出整個穿過該漿液注入器之7個具有0.089英吋 直徑之額外孔，以便它們可旁通及因而不妨礙或影響經由 該內部通道之漿液流量。在一平行於該內部通道之曲線的 約中間點上放置第4個孔。在少於平行該內部通道之內及 Q 外端的相同線之約半英吋處放置第1孔及第7孔。在這些 孔之每一者中，放置一具有相同於在出口側上之一倒刺 (barb)或唇狀物（lip)之直徑的 Airtol model NV-30-3-K 針 閥，該倒刺或唇狀物係被插入時用以快速夾住該等針閥之 部件。在該等實施範例之開始時關閉所有的這些閥及如表 1所示打開這些閥。當沒有全部關閉該等閥時，全部打開 它們及在這些測試中沒有使用部分關閉之閥。 將該等板固定在一起，以致於邊緣彼此係一致的，以 -32- 201039978 及放置螺帽於該下板中之凹洞中來用螺栓栓緊該等板，進 而製作該注入器。在組裝前，將從防水玻璃纖維強化雙面 黏著布（3M)所切割之墊圈附著至該中間板之上面及下面。 將一用以允許螺距（Pitch)或傾斜（bank)之自由調整而沒有 以該桿之軸的中心旋轉之萬向接頭機構放置在該注入器之 頂部上的該半吋孔中、以一金屬針固定該萬向接頭機構及 安裝至該桿。將該漿液輸送管安裝至該上板之入口管，以 及將具有0.175吋外徑之塑膠管子安裝至該7個針閥，以 〇 及將這7支管全部連接至一配水歧管，該配水歧管轉而連 接至一供水系統。藉由使用一蠕動泵做爲該供水歧管之去 離子水源來決定經過這些管及針閥的水流速。調整該注入 器之後緣，使離該硏磨頭之前緣有約0.5英吋，以及進一 步調整位置，使在該注入器之底部上之孔與在該墊上之「岸 部」區域對齊。 範例1-13。在使用50至200cc/min間之水流速及10 Q 至80RPM間之平台旋轉速率成功地初步測試該注入器之整 體性及穩定性後，如下執行一硏磨測試。使用「最熟知方 法（調節掃掠）」，以去離子水及在一 Araca有限公司 APD-500硏磨機上之一新3M A 1 65 100磨料調節調節盤調 節一新Rohm及HaasIC-10-A2墊有1小時，其中該方法係 設計成用以在該墊之壽命期間最佳化該墊表面之平坦度。 然後，使用Fujimi PL4072煙燻二氧化矽漿液，以55RPM 之平台旋轉速率及53RPM之載具旋轉速度，在4PSI下硏磨 -33- 201039978 具有一由四乙氧矽烷源所沉積之二氧化矽層的200毫米直 徑晶圓（稱爲TEOS晶圓）1分鐘，同時實施原地調節（在硏磨 時，同時實施調節）。在晶圓間沒有使用清洗。 在硏磨用以測量移除率之晶圓（「速率晶圓」）前’處 理一用過（「仿真j )TEOS晶圓數分鐘及然後’對一連串的 11個仿真晶圓之每一者實施1分鐘硏磨’直到平均磨擦係 數（COF)穩定爲止。在沒有水流量及90cc/min漿液流量下運 轉一速率晶圓，以提供一基線、COF、剪力變量、移除率。 在表1中計算及記述絕對不均勻性及百分比不均勻性。記 錄使用一反射計根據在每分鐘經由該等針閥之每一者（（同 時關閉其它閥））的30ml水流速下所處理之該兩個速率晶圓 的每一者之兩次直徑掃描所測量的平均移除率及在經由閥 2之每分鐘40ml和每分鐘50ml之流速下及在經由閥4之每 分鐘40ml和每分鐘50ml之流速下所測量的平均移除率’ 以及在表1中計算及記述COF、剪力變量、絕對不均勻性 及百分比均勻性，以當作範例1 - π。然後，再次在沒有水 流量及90cc/min獎液流量下運轉一速率晶圓，以提供一基 線、COF、剪力變量、移除率。在表1中計算及記述絕對 不均勻性及百分比不均勻性。接著，打開閥3、4及5及使 50ml/min總水流量同時經過該3個閥（範例12)以及打開閥 3、4及5及使75ml/min總水流量同時經過該3個閥（範例 13)以及在表1中記錄結果。 -34- 201039978The distance between the wafer (28) and the trailing edge (12) of the integral crescent injector (1) should be as high as 1 inch at the widest point. The leading edge (34) of the overall crescent injector (10) may be crescent or rectangular in shape or may be any other suitable shape that minimizes interference with the CMP process while allowing the slurry to be used in polycarbonate. There is sufficient capacity in the channel or storage tank (22) and a suitable second bow wave (46) is generated to remove the used slurry from the honing pad (26) prior to mixing with the new unused slurry. . The load of the integral crescent injector (10) resting on the honing pad (26) is between 1 and 10 pounds or more and is generally sufficient to apply sufficient pressure so that the overall crescent injector ( 10) The average gap (42) between the lower surface (16) and the honing pad (26) Q can be compared to the average gap between the wafer (28) and the pad (26) in a small multiple. (42). The latter is often measured between 10 and 25 microns, but larger or smaller gaps (82) are also possible. Although the integral crescent injector (10) may have a particular configuration, slotted or formed surface facing the underlying surface (16) of the honing pad (26), as desired, it is flat and Smooth. Although the pitch or bank can be varied if desired, the lower surface (16) is substantially parallel to the surface (36) of the honing pad (26). The gap (82) can be adjusted by planarization of the surface (16) below the overall crescent injection -23-201039978. The CMP slurry or its components are introduced into the overall crescent injector (10) via one or more openings (52) in its top portion (76). The number and size of the openings (24) in the lower surface (16) are not limited, but a diameter between 0.01 and 0.125 inches is preferred and 40 to 160 openings (24) are preferred. Preferably, the openings (24) correspond in position and number to the "shore" (30) region of the honing pad (36), and more preferably, at each "shore" (30) An opening (24) is placed over the area. There is no limit to the linear configuration of the openings (24), but 〇 they are preferably arranged along a straight line or curve. The openings (24) should be placed at any position and separated from one another for their purpose to be directly above the shore (30) of the honing pad (36). There is no particular limitation on the means for introducing slurry, water and other diluents or fluids into the overall crescent injector (10), but a tube (18) connected to the slurry or water or other diluent supply system of the CMP tool good. The tube (18) can be attached to the integral crescent injector Q (10) by any suitable means, but the first speed coupling (54) is preferred. For positioning of the main slurry inlet (20) in the top of the overall crescent injector (10), any orientation or pattern can be used, but one conforms to the radius (the honing pad (26) is at the radius Preferably, the location of the dot having the longest transition time under the wafer (28) is preferred. The flow control device (1 9) of the present invention is not particularly limited. Any means suitable for controlling the flow of slurry in a tube including a pump and a valve can be used. A needle valve for some or all of the tubes (18) is preferred for use. The position of the needle valve is not limited and can be at any position of the tubes (18), but at the end of the tube (18) and the slurry inlet (20) at -24-201039978 good. As noted herein, the needle or other flow control device can be positioned to access the passage or directly through the injector to the honing pad. The distribution of the flow control devices or needle valves along the injector is not particularly limited, but as described herein, preferably they can be evenly spaced or distributed in any pattern and evenly spaced apart. The needle valve can be controlled by any reasonable means and the operator can control them manually or mechanically or mechanically by a robot or computer. 〇 When positioning the (etc.) inlet (20), the size of the channel or storage tank (2 2) should be considered and whether it is a narrow channel or storage tank (2 2). The integral crescent injector (10) can be made by any suitable means, but can be made by a method whereby the integral crescent injector (10) is formed from 3 layers (56) or It is preferred to form the hard material and to cut the three polycarbonate sheets joined together by any suitable means. The layers (56) may be of the same or different thickness and any thickness which is not so thin that the overall crescent injector (10) is too weak to withstand the rigor of CMP or is not thick enough The degree of bulkiness and inapplicability, as well as a uniform layer (56) having a thickness of 0.17 inch per layer is preferred. In the case of using the layers (56), they may be of uniform thickness, or they may be beveled (especially the intermediate layer) (if a channel or storage tank (22) is used) in the hope that in this case A channel or storage tank (22) having a different thickness is produced. A layer (56) having a uniform thickness is preferred. The line or passage (22) for introducing the slurry to the lower surface of the injector may be a direct passage through the injector of the -25-39,939,978, may be branched or may include a removal, in particular by A channel or storage tank (22) produced by a larger portion of the intermediate layer (86) in the layer case. Where such a channel or reservoir (22) is used, the channel or reservoir (22) may be shaped to be identical to the basic shape of the integral crescent injector (10) or it may be an oval or Oval or a simple channel or any other suitable uniform shape. The passage or reservoir (22) should have a bleed valve (88) on either end to remove air upon introduction of the slurry. Preferably, a flow meter or other suitable sensor can be added to monitor the slurry flow prior to entering the integral crescent injector (10). Where a channel or reservoir (2 2) is used, a reservoir having a substantially oval shape at the center of the injector or an outer interface (14) from the integral crescent injector (34) Preferably, the channel or storage slot (22) for the side interface (90) of a fixed distance is preferred. The upper surface (60) and the lower surface (62) of the channel or reservoir (22) may be Q parallel and flat, may have a slight interfacial angle with respect to each other or may be slightly rounded. The parallel and smooth upper surface (60) and lower surface (62) of the channel or reservoir (22) are preferred. An opening (24) in the lower surface (16) of the integral crescent injector (10) (the slurry exits the integral crescent injector (10) via the openings (24)) can be any shape and size However, the circular or oval shape is preferred, and the circular shape is better. The diameter of the outlets (24) can be any diameter, but for a total of 68 openings (24) on the overall crescent injector (10), -26-201039978 is preferably about 0.0625 inches in diameter. . The equal opening (24) can be made perpendicular to the lower surface (16) or at an angle. The openings (24) can be made by any suitable means, but drilling is preferred. Any positioning and pattern can be used, but corresponds to the radius of the land (30) region and the curve along the trailing edge (12) of the overall crescent injector (10) and is approximately 1/4 inch in front of the curve. The curve spacing of the openings (24) is preferred. Regarding the radial distance of the inlet (20) from the center of the honing pad (26), the flow rate of the slurry through the integral crescent injector (10) is affected by the (etc.) f) I inlet (20) The impact of the location. As a result, the position of the (etc.) inlet (20) and the size, shape, angle of incidence, and density pattern of the inlets (24) can be adjusted to optimize flow conditions. The slurry can be introduced into the passage or storage tank (22) in the integral crescent injector (10) by gravity flow or by pumping. If introduced by pumping, there is no rate limit, but a speed of about 50 ml/min or more for 68 openings (24) or about 7.3 ml/min or more for each opening (24) is preferred. Q The position of the integral crescent injector (10) can be maintained on the honing pad (26) by any suitable means, but the beam (64) having the stem (66) is preferred, wherein the overall crescent injection The device (10) is attached to the rod (66). The beam (64) or rod (66) should be sufficiently strong to withstand the rigorous testing of the CMP process and should have a diameter or thickness between 0.25 and 0.75 inches. Stainless steel is preferred as the component material. The integral crescent injector (10) should be removable from the rod (66) so that the integral crescent injector (10) can be cleaned or replaced when worn. The above also allows for the transfer of integral crescent injectors having different hole patterns corresponding to the geometry of the different honing pads (36) grooves -27- 201039978. In the present invention, the contact point between the integral crescent injector (10) and the rod (66) or other support means is universally connected (68) so that the overall crescent injector can be slightly adjusted or moved. (10) Pitch and tilt. The upper end of the rod (66) can be secured to the support mechanism of the CMP tool by any suitable means (e.g., set screws (74)). A fixed spring (70) can be used to apply a fixed load to the collar (72) before tightening the set screw (74) for the rod (66), or before tightening the set screw (74), A weight (50) is placed on the upper surface (76) of the unitary crescent shaped injector (10) to apply a load. The collar (72) is secured to the rod (66) by a different set screw (73). A suitable load sensor can be fitted to determine the load during operation. When pumping a slurry (or water or other diluent or fluid, as the case may be) to the overall crescent injector (10), any suitable flow rate can be used, for example, pumping at a rate of 30-300 cc per minute. Violet or water or other diluent or fluid. Q. The universal joint device (68) at the point of connection between the integral crescent injector (10) and the rod (66) can be any adjustment that allows the pitch and tilt angle to be disabled without the rod (66). The shaft of the shaft is a suitable universal joint device (6 8). The above may be a fixed adjuster or may allow the integral crescent injector (10) to be naturally adjusted such that it can lie flat on the surface (36) of the honing pad (26). This universal joint (68) feature allows the operator to produce a very thin slurry film and, in doing so, effectively separates the spent slurry in the bow wave (46) at the leading edge of the integral crescent injector (10). And while the overall new moon • 28 - 201039978 shaped injector (10) is located on or above the honing pad (26), 'will not lose the bottom (16) of the overall crescent shaped injector (10) Plane orientation. The sensor or sensor array (25) used in the present invention may be any sensor or sensor array capable of accurately and accurately observing and recording the amount of slurry on each bank (30) during honing. An infrared sensor that can observe the lower temperature of the newer slurry is preferred. The method of the present invention can be any method whereby the flow control device (19) on the tubes (18) can be adjusted to optimize or otherwise operate the shore of the mat before the leading edge of the mat (30) The slurry concentration on (10) to optimize slurry loss and maximize uniformity of removal. There is no particular limitation on the means for determining the optimization of the slurry output and the uniformity of the removal rate. However, visual inspection and sensor inspection and sensor inspection can be used for the slurry observation system. The use of a reflectometer is better for the measurement of the removal rate. The operator decides how much to adjust the flow control devices or can be automatically determined by a software routine. A software routine is preferred. There is no particular limitation on the actual adjustment and the actual adjustment may be automatic or manual and automatic. When the honing starts and the slurry injection begins, the initial settings of the flow control devices (1 9) may be based on experience or calculations based on the equal flow rate of the diluent via the tubes (18) or some other remaining settings. The adjustments of the flow control devices (19) may be continuous or simultaneous or a combination thereof (eg, a group of selected flow control devices that are simultaneously adjusted) and may be continuous, spaced, or after the operation is completed. And before the next run. By recording these adjustments and reactions on the Information Unit at -29-201039978, a large number of data volumes for certain wafers, slurries and conditions can be accumulated. While a slurry diluted with water or some other aqueous solution or simple water or some other suitable fluid may be used, it does not limit the definite ingredients of the diluent of the present invention. It should be noted that where multiple slurry inlets (20) or slurry inlets (20) with additional flow control devices (19) are used, they may be applied via multiple slurry inlets (20) or flow control devices (19). The same slurry of the same concentration is usually used in CMP. Such multiple inlets (20) and flow rate f) control devices (19) have more than one effect. In addition to allowing the use of diluents that may alter the viscosity or chemical composition or activity of the slurry, they are also used to allow the slurry to be injected into the injector away from the main slurry inlet, and even when no diluent is used and The concentration of the slurry will have a significant impact on the slurry flowing through the different parts of the injector as the entire injector channel is the same and thus the viscosity is the same. In this alternative, when these additional inlets are placed on the entire injector itself, 'although the movement or concentration of the slurry in the channel itself is no longer affected, but the concentration of the slurry on the surface of the pad is changed, In turn, the activity of the slurry on the pad is selectively altered and a change in removal rate is caused. In this case, 'the amount of slurry that does not affect the different components passing through the injector channel' is reflected in the slurry concentration after delivery. It is important to control the slurry concentration on the pad and thus the removal rate. What is desired in this embodiment is 'allows more accurate control of the amount of water, dilute slurry or other diluent that contacts a particular area of the pad, which allows for a more specific adjustment of the removal rate in some cases. - 201039978 Entire. EXAMPLES The following examples are given to illustrate the practice of the invention without limitation. For the following example, a Rohm and Haas IC-10-A2 CMP pad was mounted to an Araca Co. APD-500 200 nm CMP Honing Tool and a Mitsubishi Materials Corporation TRD Adjusting Tray was also installed. A stainless steel shaft having a length of about 6.5 inches and a diameter of 0.3125 inches is slid into a hole in the adjustable beam 〇 ' that is clamped to the support mechanism of the CMP tool. A spring is placed along the rod between the collar and the support mechanism to compress the spring and to mount the collar to the rod with a set screw. This has the effect of transferring force from the spring through the injector to the surface of the pad. Then, a separate fixing screw for the rod in the adjustable beam is used to mount the rod to the support mechanism, thereby fixing the load and preventing the rod from rotating about its own axis. Three transparent polycarbonate sheets (GE Plastics Q XL10, 0.17 inch thick) were cut together using a hand saw to produce about 10 inches from the corner to the corner with - corresponding to a honing head (diameter: 11.125 inches) ; Width: 1 inch) 3 identical crescent shapes of the trailing edge radius [Fig. 1], and the injector is further fabricated. Four bolt holes are drilled at a distance of about 2 inches from the side of the convex (front) edge of the shapes and the bolt holes have a separation of about 4 inches in the middle, and one of the plates ( In the following), the holes are recessed to a depth of about 0.1 inch at a diameter of 3/8 inch to accommodate the press-fit threaded aluminum nut. A -31 - 201039978 hole having a diameter of 1/2 inch is drilled through the other two plates (above and in the middle) and through the half of the lower plate to accommodate the universal joint mechanism. In the intermediate plate, the length of the plate is completely cut at a quarter of an inch of the equiangular portion at an interval of about 1/4 inch before the concave trailing edge of the intermediate plate to form a length. Assign channels. The channel has a width of 1/8 inch. Using a single template constructed with the aid of a honing pad, 68 holes (1/16 inch diameter) are drilled through the lower layer along the path of the channel at the desired variable spacing to enable such The holes are aligned with the land area on the pad. Finally, an inlet having a diameter of 3/8 inch is drilled into the upper plate, and 〇_ is mounted with an aluminum inlet tube, a 4-inch cross-section tube, and a suitable for connection to the honing machine. The quick connector of the tube. 7 additional holes having a diameter of 0.089 inches through the slurry injector are drilled at uniform intervals at a position approximately 1/8 inch closer to the leading edge of the injector than the leading edge of the channel so that they can be next to each other The flow of slurry through the internal passage is thus not impeded or affected. A fourth hole is placed at approximately the middle point of the curve parallel to the internal passage. The first hole and the seventh hole are placed at less than a half inch of the same line parallel to the inner channel and the outer end of the Q. In each of these holes, an Airtol model NV-30-3-K needle valve having the same diameter as one of the barbs or lips on the outlet side is placed, the barb Or the lip is used to quickly clamp the components of the needle valve when inserted. All of these valves were closed at the beginning of the examples and the valves were opened as shown in Table 1. When not all of the valves were closed, they were all opened and no partially closed valves were used in these tests. The plates are fixed together so that the edges are in line with each other, and the plates are made by bolting the plates to the holes in the lower plate at -32-201039978, thereby making the injector. Prior to assembly, a gasket cut from a waterproof glass fiber reinforced double-sided adhesive cloth (3M) is attached to the top and bottom of the intermediate plate. A universal joint mechanism for allowing free adjustment of the pitch or bank without rotating the center of the shaft of the rod is placed in the semi-boring hole on the top of the injector, with a metal The universal joint mechanism is fixed by the needle and mounted to the rod. Mounting the slurry delivery tube to the inlet tube of the upper plate, and installing a plastic tube having an outer diameter of 0.175 inch to the seven needle valves to connect and connect all of the seven tubes to a water distribution manifold The tube is in turn connected to a water supply system. The water flow rate through the tubes and needles is determined by using a peristaltic pump as the source of deionized water for the water supply manifold. The trailing edge of the injector is adjusted to be about 0.5 inch from the leading edge of the honing head, and the position is further adjusted so that the hole in the bottom of the injector is aligned with the "shore" area on the pad. Example 1-13. After successfully testing the integrity and stability of the injector using a water flow rate between 50 and 200 cc/min and a platform rotation rate between 10 Q and 80 RPM, a honing test was performed as follows. Use the "best known method (adjust sweep)" to adjust a new Rohm and HaasIC-10- with deionized water and a new 3M A 1 65 100 abrasive adjustment dial on an Araca APD-500 honing machine The A2 pad has 1 hour, wherein the method is designed to optimize the flatness of the pad surface during the life of the pad. Then, using Fujimi PL4072 smoked cerium oxide slurry, with a platform rotation rate of 55 RPM and a rotation speed of 53 RPM, honing at -3 PSI -33-201039978 with a cerium oxide layer deposited from a tetraethoxy decane source A 200 mm diameter wafer (called a TEOS wafer) was used for 1 minute while performing in-situ adjustment (adjustment was performed while honing). No cleaning is used between wafers. Before honing the wafer used to measure the removal rate ("rate wafer"), 'process one used ("simulation j" TEOS wafer for a few minutes and then 'for each of a series of 11 simulated wafers Perform a 1 minute honing ' until the average coefficient of friction (COF) is stable. Run a rate wafer at no water flow and 90 cc/min slurry flow to provide a baseline, COF, shear force, removal rate. Absolute inhomogeneity and percent non-uniformity are calculated and accounted for in 1. The recording is processed using a reflectometer based on a flow rate of 30 ml per minute through each of the needle valves (while closing other valves) The average removal rate measured by two diameter scans of each of the two rate wafers and at a flow rate of 40 ml per minute via valve 2 and 50 ml per minute and 40 ml per minute via valve 4 and 50 ml per minute The average removal rate measured at the flow rate' and the COF, shear force variable, absolute inhomogeneity and percent uniformity are calculated and described in Table 1 as an example 1 - π. Then, again in the absence of water flow and Run at 90cc/min prize flow rate Rate wafers to provide a baseline, COF, shear force, removal rate. Absolute inhomogeneity and percent non-uniformity are calculated and accounted in Table 1. Next, valves 3, 4, and 5 are opened and 50 ml/min is applied The total water flow simultaneously passes through the three valves (Example 12) and opens valves 3, 4 and 5 and causes 75 ml/min total water flow to pass simultaneously through the three valves (Example 13) and the results recorded in Table 1. -34- 201039978
表1 晶圓 範例 cc/mil晶圓 &閥編號 COF 剪力變量 (lbf2) 移除率 A/min 絕對 NUA 百分比 NU 1 基線 0 0.331 11.41 2525 607 24.08% 2 1 30閥1 0.344 14.85 2178 610 27.99% 3 2 30閥2 0.341 15.44 2159 412 19.07% 4 3 30閥3 0.340 15.59 2205 475 21.52% 5 4 30閥4 0.338 15.11 2245 535 23.84% 6 5 30閥5 0.335 12.32 2205 502 22.79% 7 6 30閥6 0.334 12.61 2302 670 29.08% 8 7 30閥7 0.329 10.96 2374 546 23.11% 9 8 40閥2 0.337 16.36 2096 471 22.51% 10 9 50閥2 0.340 14.49 2009 501 24.96% 11 10 40閥4 0.334 12.85 2162 425 19.72% 12 11 50閥4 0.336 12.55 2094 444 21.25% 13 基線 0 0.324 8.14 2436 568 23.42% 14 12 50 閥 3+4+5 0.338 12.09 2002 357 17.79% 15 13 75 閥 3+4+5 0.341 12.74 1880 327 17.46% 本發明之效果 本發明特別係一種使用一注入器及多個用於漿液或其 它流體，特別是稀釋液之入口來改善晶圓之CMP的移除率 之方法。當該等範例顯示添加7個水閥至該具有一單漿液 入否的標準注入器之情況下，如表1所示，依那個或那些 -35- 201039978 閥被打開而定，可看到相較於只以引入該注入器之漿液來 硏磨的晶圓之移除率的實質變化。然而，移除率之單純改 變沒有告知操作員任何有關均勻性之事，以及上述係由在 硏磨之完成時圓盤面之反射計所決定。根據第4、5及6圖， 可輕易觀察到藉由改變閥的配置，可明確獲得在晶圓之兩 個垂直定向上所測得在整個晶圓直徑上有更均勻的移除 率。在表1中包含不均勻性及百分比不均勻性之數字。藉 由在一系列硏磨測試及反射計觀測中調整該等針閥，應該 〇 可針對在某一速率下所引入之某一漿液決定最佳閥設定及 實質校正該注入器，以提供最佳移除率效能。此因素與漿 液浪費之固有減少及未經加工漿液之浪費的減少一起使本 發明相較於該習知技藝有實質改善。 另外像機械化回饋迴路之加入及稀釋液之濃度及成分 的較大彈性的改變產生最佳化或改善CMP性能之額外手 段。應該強調提供最佳性能之特別設定因情況而有所不同 及因而不是重要的。製程可用以在一係重要且爲本發明之 0 元件中之一的特別系統中發現它們。 【圖式簡單說明】 第1圖係該注入器之上視圖。 第2圖係在該墊上方之該注入器的剖面側視圖。 第3圖係該回饋系統之圖。 第4圖係在一具有90ml/min漿液流量而沒有水之基線 流中橫跨該晶圓之移除率的曲線圖。 第5圖係使用90ml/min發液流量及在30cc/min水流量 -36- 201039978 下打開之針閥3之移除率的曲線圖。 第6圖係使用90ml/min漿液流量及在50cc/min水流量 下打開之針閥3、4及5之移除率的曲線圖。 【主要元件符號說明】 10 整體新月形注入器 12 整體新月形注入器10之凹後緣 14 晶圓 16 整體新月形注入器10之下表面Table 1 Wafer Example cc/mil Wafer & Valve Number COF Shear Force Variable (lbf2) Removal Rate A/min Absolute NUA Percentage NU 1 Baseline 0 0.331 11.41 2525 607 24.08% 2 1 30 Valve 1 0.344 14.85 2178 610 27.99 % 3 2 30Valve 2 0.341 15.44 2159 412 19.07% 4 3 30 Valve 3 0.340 15.59 2205 475 21.52% 5 4 30 Valve 4 0.338 15.11 2245 535 23.84% 6 5 30 Valve 5 0.335 12.32 2205 502 22.79% 7 6 30 Valve 6 0.334 12.61 2302 670 29.08% 8 7 30 Valve 7 0.329 10.96 2374 546 23.11% 9 8 40 Valve 2 0.337 16.36 2096 471 22.51% 10 9 50 Valve 2 0.340 14.49 2009 501 24.96% 11 10 40 Valve 4 0.334 12.85 2162 425 19.72% 12 11 50 Valve 4 0.336 12.55 2094 444 21.25% 13 Baseline 0 0.324 8.14 2436 568 23.42% 14 12 50 Valve 3+4+5 0.338 12.09 2002 357 17.79% 15 13 75 Valve 3+4+5 0.341 12.74 1880 327 17.46% EFFECTS OF THE INVENTION The present invention is particularly directed to a method of using an injector and a plurality of inlets for slurry or other fluids, particularly diluents, to improve the CMP removal rate of the wafer. When these examples show the addition of 7 water valves to the standard injector with a single slurry entry, as shown in Table 1, depending on which or those -35-201039978 valves are opened, the phase can be seen A substantial change in the removal rate of the wafer honed only by the slurry introduced into the injector. However, the mere change in removal rate does not inform the operator of any uniformity, and the above is determined by the reflectometer of the disk surface at the completion of the honing. According to Figures 4, 5 and 6, it can be easily observed that by varying the valve configuration, it is clear that a more uniform removal rate across the wafer diameter is measured in the two vertical orientations of the wafer. The numbers of inhomogeneities and percentage inhomogeneities are included in Table 1. By adjusting the needle valves in a series of honing tests and reflectometer observations, it is desirable to determine the optimal valve settings and substantially correct the injector for a particular slurry introduced at a rate to provide optimum Removal rate performance. This factor, together with the inherent reduction in slurry waste and the reduction in waste of the unprocessed slurry, provides a substantial improvement over the present invention over the prior art. In addition, changes such as the addition of a mechanized feedback loop and the greater flexibility of the concentration and composition of the diluent result in an additional means of optimizing or improving CMP performance. It should be emphasized that the special settings that provide the best performance vary from case to case and are therefore not important. The process can be found in a particular system that is important in one of the 0 components of the present invention. [Simple description of the diagram] Figure 1 is a top view of the injector. Figure 2 is a cross-sectional side view of the injector above the pad. Figure 3 is a diagram of the feedback system. Figure 4 is a graph of the removal rate across the wafer in a baseline flow with 90 ml/min slurry flow without water. Figure 5 is a graph showing the removal rate of the needle valve 3 using a flow rate of 90 ml/min and a water flow rate of -36-201039978 at 30 cc/min. Figure 6 is a graph showing the removal rate of needle valves 3, 4 and 5 using a 90 ml/min slurry flow rate and a flow rate of 50 cc/min. [Main component symbol description] 10 Overall crescent injector 12 The concave trailing edge of the overall crescent injector 10 Wafer 16 The lower surface of the overall crescent injector 10
18 漿液供應管 19 流量控制裝置 2〇 整體新月形注入器10之頂部中的漿液入口 21 流量控制裝置用之管子 22 在整體新月形注入器10中之用以引導漿液的 通道或貯存槽。因爲在本實施例中整體新月形 注入器1 0之本體係由透明聚碳酸酯板所製 成，所以它係可看見的。 23 水或漿液或稀釋供應歧管 24 在整體新月形注入器10之下表面16中的開口 26 硏磨墊 2 8 晶圓之前緣 30 在硏磨塾之上表面上的岸部區域 32 岸部區域30間之溝槽 34 整體新月形注入器之前緣 36 硏磨墊26之上表面 -37- 201039978 40 用以將整體新月形注入器10夾在一起之螺栓 42 晶圓26之前緣14與整體新月形注入器10之 後緣1 2間之間隙 44 整體新月形注入器10之末端上的角狀物 46 在整體新月形注入器10之前緣34前的第二弓 形波（注意到本發明有效地去除通常在間隙42 中所形成之第二弓形波。） 52 高以容許漿液至整體新月形注入器10的入口18 slurry supply pipe 19 flow control device 2 slurry inlet 21 in the top of the overall crescent injector 10 pipe 22 for the flow control device channel or storage tank for guiding the slurry in the overall crescent injector 10 . Since the present system of the entire crescent injector 10 in this embodiment is made of a transparent polycarbonate sheet, it is visible. 23 Water or slurry or diluted supply manifold 24 in the opening 16 in the lower surface 16 of the overall crescent injector 10 honing pad 2 8 wafer leading edge 30 in the land area on the upper surface of the honing wheel 32 shore area 30 grooves 34 Overall crescent injector front edge 36 Honing pad 26 upper surface -37- 201039978 40 Bolt 42 for clamping the overall crescent injector 10 together Wafer 26 leading edge 14 with The gap between the trailing edge 1 of the integral crescent injector 10 44 the lobes 46 on the end of the overall crescent injector 10 the second bow wave before the leading edge 34 of the overall crescent injector 10 (notice The present invention effectively removes the second arcuate wave typically formed in the gap 42.) 52 high to allow the slurry to enter the entrance of the overall crescent injector 10
54 用以連接管18至漿液源（未顯示）之速接聯結器 56 用以構成本實施例之整體新月形注入器10的層 60 通道或貯存槽22之上表面 62 通道或貯存槽22之下表面 64 用以支撐注入器之來自硏磨工具（未顯示）的棟 66 用以支撐整體新月形注入器10之桿 68 被安裝至內部裝有桿66之整體新月形注入器 10的萬向接頭裝置 70 用以設置負荷在整個整體新月形注入器1〇上 之彈簧 72 用以在桿66上支撐彈簧70之軸環 73 在軸環72上之固定螺釘 7 4 用以固住桿66至樑64的固定螺釘 76 整體新月形注入器10之上表面 -38-54 A quick coupler 56 for connecting the tube 18 to a slurry source (not shown) for forming the layer 60 channel of the overall crescent injector 10 of the present embodiment or the upper surface 62 of the reservoir 22 or the reservoir 22 Lower surface 64 is used to support the injector from the honing tool (not shown) 66 for supporting the overall crescent injector 10 rod 68 is mounted to the inner crescent injector 10 with the inner rod 66 The universal joint device 70 is used to set a spring 72 for loading the entire crescent-shaped injector 1 to support the collar 73 of the spring 70 on the rod 66. The fixing screw 7 4 on the collar 72 is used for fixing Fixing screw 76 for rod 66 to beam 64 Overall upper surface of crescent injector 10 -38-