201038771 六、發明說明： 【發明所屬之技術領域】 本發明係有關可使用於 爲對鋁膜、鋁合金膜等金屬 詳細而言，係有關爲對構成 基板上設有的鋁膜或鋁合金 組成物。 Ο 【先前技術】 自過去即已知各種電子 基板等之表面上，形成配線 之方法。 首先，於基板上形成配 鋁合金膜。其次，於其表面 脂，藉由進行曝光·顯像而开 〇 然後，使用該圖案光罩 藉此可於鋁膜或鋁合金膜上 〇 然而近年來，半導體裝 型化及高性能化的要求變高 或電極等之微小化、高性能 隨之而來者係於進行多層化 ，進行蝕刻後之配線的側面 緣板或基板等）之表面形成 例如電子元件之配線形成等， 膜進行蝕刻之蝕刻液組成物， 半導體裝置及液晶表示裝置之 膜等金屬膜進行蝕刻之蝕刻液 元件，其於半導體基板或玻璃 或電極等之如下所述藉以蝕刻 線·電極材料（基材）之鋁膜或 上以光微影技術塗布感光性樹 〖成圖案光罩。 於鋁膜或鋁合金膜進行蝕刻。 形成所期望圖案之配線及電極 置及液晶表示裝置對製品的小 ，伴隨對該等裝置具備之配線 化之要求亦更趨嚴格。因此， 之技術領域中，爲對應多層化 ，與形成配線之基材（例如絕 的角度（以下該角度稱作錐度 -5- 201038771 角（taper angle))，形成未達90°之形狀（錐狀），強 烈希望控制配線之剖面形狀。 由於伴隨近年來圖案之高密度化與微細化，配線材料 需具備低電阻性等，而廣泛使用鋁或鋁合金作爲配線材料 〇 另外，進行多層配線之情況爲減少信號延遲，使用鋁 或鋁合金作爲下層配線的材料。而由於上層配線與下層配 線需絕緣，採取於下層之鋁配線或鋁合金配線上，以任一 種方法形成絕緣層之後，再於其上形成作爲上層配線之鋁 配線或鋁合金配線。 此時，下層之鋁配線或鋁合金配線，爲提高其上所形 成之絕緣層之被覆性，必須控制配線之剖面形狀爲錐狀。 此時，下層之鋁配線或鋁合金配線之剖面形狀之控制 性相當重要，於無法獲得剖面形狀爲錐狀之配線時，或配 線之錐度角0爲所期望之範圍以外之情況時，上層之鋁配 線或鋁合金配線會有斷線，及以絕緣層產生之裂縫（ Crack )爲介上層配線與下層配線出現短路之情況，降低 可信賴性等問題點。 一般藉由蝕刻形成錐狀配線之情況，會使用磷酸/硝 酸/醋酸之水溶液作爲蝕刻液，藉由於鋁膜或鋁合金膜上 進行蝕刻，可行成錐狀配線。 例如使用磷酸/硝酸/醋酸/水之容量比爲1 6 : 2〜 8 : 2 : 1之混合液，將作爲光罩之光阻進行曝光.顯像處 理形成規定的配線形狀，進行圖案化後，以可獲得使前述 -6- 201038771 光阻與金屬膜具充分密著性之光罩之烘烤溫度進行曝光後 烘烤（Post Exposure Bake )後，使用與金屬膜密著性優 異之光罩進行蝕刻之情況，可獲得配線的側面，與形成配 線之基材（例如絕緣板或基板等）之表面形成的角度（錐 度角）Θ，爲未達90°、接近90° (垂直）之配線。 然而有報告指出，光阻之烘烤溫度較適當溫度爲低時 ，金屬膜與光罩的密著性變爲不充分，光阻與金屬膜的界 〇 面侵入蝕刻液，金屬膜的蝕刻面，由於金屬膜其上面側亦 受到蝕刻，配線的側面與配線的上面形成的角度變大，形 成配線的側面爲和緩傾斜之具有單層錐狀之配線，且將蝕 刻液中之硝酸濃度進而提高時，錐度角會變小（參照專利 文件1 )。 反之，已知硝酸濃度較低之情況，會形成錐度角大之 單層錐狀形狀，而提高硝酸濃度時，光阻與金屬膜之界面 的蝕刻速率變高，會形成具備於光阻與金屬膜之界面側形 Ο 成錐度角小的單一之層，與於較單一之層更接近基板側形 成錐度角大的雙層之層此2種層之具有錐狀形狀之配線， 進而提高硝酸濃度時，會形成傾斜較小之具有1層的錐狀 形狀之配線（參照專利文件2、專利文件3 )。 然而，提高蝕刻液中之硝酸濃度時，鋁膜或鋁合金膜 的蝕刻速率也會變高，但鈾刻的控制性變低，難以獲得控 制性佳之具有錐狀形狀之配線。 另外，爲磷酸/硝酸/醋酸/水之混合溶液之蝕刻液 其硝酸濃度高之情況，會產生硝酸引起之光阻損傷，於光 201038771 阻表面可被確認出現裂痕，但有可抑制光阻表面的裂痕， 且金屬表面未被確認有蝕刻痕之報告（參照專利文件2 ) 〇 進而有蝕刻液引起的光阻收縮可限定於一定的狀況之 報告（專利文件3 )。 然而硝酸濃度高之情況，進行蝕刻後，以電子顯微鏡 (SEM )觀察光阻表面時，除了光阻表面有出現裂痕以外 ，蝕刻面的內側，亦即於未進行蝕刻之光阻與金屬膜之界 面上，確認因蝕刻液滲入而產生的蝕刻痕（以下稱作「蝕 刻液滲出」）。因此，當發生蝕刻液滲出的現象時，包覆 光阻的金屬膜表面受到蝕刻而變爲不平坦，而發生無法獲 得所期望的形狀之問題。 另外，由於半導體製程微細化的進展，針對鈾刻後的 金屬膜表面，目前正尋求可獲得金屬膜表面無凹凸不平， 且具有優異平坦性、平滑性之高品質的金屬膜之方法。作 爲於蝕刻液中加入添加劑而改善蝕刻後金屬膜表面的嘗試 ，已提案有例如於蝕刻步驟中藉由使氣泡附著於金屬膜表 面，盡可能地防止蝕刻對被保護不受蝕刻面之平滑性的損 傷，且爲可避免硝酸對金屬膜進行蝕刻時所產生的氫附著 於金屬膜表面，於以磷酸/硝酸/醋酸/水爲主成分之蝕 刻液中，添加了三烷基胺氧化物系界面活性劑之蝕刻液組 成物（例如專利文件4 )。另外爲改善蝕刻液之微細加工 性，已知有以改善濡濕性爲目的而添加界面活性劑（例如 專利文件5 )。 -8- 201038771 然而，實情是於該等專利文件4、5中’並未有特別 針對可形成具有無凹凸不平，且優異平滑性之高品質金屬 表面之錐狀形狀之金屬膜的提案。 另外，已提案有以磷酸/硝酸/醋酸/水爲主成分之 蝕刻液中，添加了烷基硫酸酯，或全氟鏈烯基苯基醚磺酸 以及該等之鹽之界面活性劑的蝕刻液（例如專利文件6) 。然而，使用該專利文件6之蝕刻液之情況，實情是雖可 〇 實現低錐度角，但有關鋁膜表面的凹凸不平，光阻滲出等 問題，並未揭示充分的解決對策。 如上所述，實情係尋求可形成具備可精確地控制錐度 角，且不產生光阻滲出，表面無凹凸不平，具有優異平坦 性、平滑性之高品質的蝕刻面，且具有錐狀形狀，同時具 有低錐度角之金屬膜之蝕刻液組成物》 [先前技術文件] Ο [專利文件] 專利文件1 :特開平7-176525號公報 專利文件2 :特開平6-122982號公報 專利文件3 :特開2001-77098號公報 專利文件4 :特表平4-506528號公報 專利文件5 :特開2003-49285號公報 專利文件6:特開2005-162893號公報 【發明內容】 * 9 - 201038771 [發明欲解決之課題] 本發明係有鑑於上述實情，爲解決上述課題而進行之 硏究’爲獲得防止於具有多層配線之半導體裝置之上層配 線的斷線或短路，成品率佳，且信賴性優異之半導體裝置 ’以提供金屬膜特別係鋁或鋁合金膜之控制性佳，且不會 產生光阻滲出而可進行蝕刻，可獲得具有適當的錐形形狀 與優異的平坦性、平滑性之金屬膜之蝕刻液組成物爲目的 [解決課題之手段] 爲解決上述課題，本發明團隊進行專心的、重複的檢 討後，使下述之蝕刻液組成物之發明達到完成。 亦即，本發明之蝕刻液組成物，其係使用爲對基板上 之金屬膜進行蝕刻之蝕刻液組成物，其特徵係含有磷酸、 硝酸、有機酸鹽及界面活性劑之水溶液。 另外，於本發明之蝕刻液組成物中，前述之有機酸鹽 係使用選自脂肪族單羧酸、脂肪族聚羧酸、脂肪族氧羧酸 '芳香族單羧酸、芳香族聚羧酸、芳香族氧羧酸所成群之 至少一種之選自銨鹽、胺鹽、第4級銨鹽、鹼金屬鹽所成 群之至少一種有機酸鹽爲佳。 本發明之蝕刻液組成物中，有機酸鹽之濃度爲0.1〜 20重量％爲佳。 前述之界面活性劑以使用陰離子性界面活性劑以及/ 或氟系界面活性劑爲佳。 -10 - 201038771 前述之陰離子性界面活性劑以使用聚苯乙烯磺酸以及 /或該等之鹽，或爲烷基硫酸酯以及/或該等之鹽爲佳。 另外，前述之氟系界面活性劑以使用全氟鏈烯基苯基 醚磺酸以及/或該等之鹽爲佳。 前述界面活性劑之濃度以0.001〜1.0重量％爲佳。 進而，本發明之蝕刻液組成物，使用於對由鋁或鋁合 金構成之金屬膜進行蝕刻之情況特佳。 0 [發明的效果] 將本發明之蝕刻液組成物使用於金屬膜蝕刻時，可控 制蝕刻速率。其結果，藉由使用本發明之蝕刻液組成物進 行金屬膜之蝕刻，可控制金屬膜蝕刻後之形狀，且可形成 具有低錐度角形狀之配線及電極。 有機酸鹽可藉由使用選自脂肪族單羧酸、脂肪族聚羧 酸、脂肪族氧羧酸、芳香族單羧酸、芳香族聚羧酸、芳香 Ο 族氧羧酸所成群之至少一種之選自銨鹽、胺鹽、第4級銨 鹽、鹼金屬鹽所成群之至少一種有機酸鹽，可控制金屬膜 蝕刻後之形狀，且可確實形成具有期望的低錐度角形狀之 配線及電極。 另外，於本發明之蝕刻液組成物中，藉由使有機酸鹽 之濃度爲0.1〜20重量％之範圍，可確實地控制金屬膜蝕 刻後之形狀，且可形成具有期望的低錐度角形狀之配線及 電極。 另外，藉由使用界面活性劑爲陰離子性界面活性劑以 -11 - 201038771 及/或氟系界面活性劑，可以極佳效率，確實地形成具有 期望的低錐度角形狀之配線及電極。 於陰離子性界面活性劑使用聚苯乙烯磺酸以及/或該 等之鹽，或烷基硫酸酯以及/或該等之鹽之情形時，可以 極佳效率，確實地形成具有期望的低錐度角形狀之配線及 電極。 另外，於氟系界面活性劑使用全氟鏈烯基苯基醚磺酸 以及/或該等之鹽之情形時，可以極佳效率，確實地形成 具有期望的低錐度角形狀之配線及電極。 另外藉由使界面活性劑之濃度爲0.0 0 1〜1.0重量％ ，可確實地進行效率佳之蝕刻，且可形成具有期望的低錐 度角形狀之配線及電極。 進而，使用本發明之蝕刻液組成物，對由鋁或鋁合金 構成之金屬膜進行蝕刻時，可更加確實地控制蝕刻速率及 進行蝕刻後之形狀。因此，其結果可獲得期望之具有低錐 度角，且具有安定的錐形形狀之配線及電極。 進而，本發明之金屬膜之蝕刻液組成物，具備有即便 硝酸濃度高，亦不會發生光阻滲出之特徵。 另外，本發明之蝕刻液組成物，即便硝酸濃度高，因 將進行蝕刻後光阻表面可見之裂痕數，與使用以往之蝕刻 液之情形相比變得較少，而可抑制，光阻的劣化。 藉由使用本發明之金屬膜之蝕刻液組成物，即便於錐 度角小之情況，仍可使金屬膜進行蝕刻後所形成之蝕刻面 ，形成表面不會凹凸不平且爲平坦的表面。 -12- 201038771 使用本發明之金屬膜之蝕刻液組成物進行蝕刻時，根 據光阻的圖案化之前處理之藥液處理溫度及處理時間，可 防止錐度角的變動。 【實施方式】 以下說明本發明之實施方式。 本發明之蝕刻液組成物中，磷酸較佳濃度爲30〜80 〇 重量％，進而以40〜70重量％更佳。 本發明之蝕刻液組成物中，硝酸較佳濃度爲1〜40重 量％，進而以5〜30重量％更佳。 本發明之蝕刻液組成物所使用之有機酸鹽可舉出脂肪 族單羧酸、脂肪族聚羧酸、脂肪族氧羧酸、芳香族單羧酸 、芳香族聚羧酸、芳香族氧羧酸等之銨鹽、胺鹽、第4級 銨鹽、鹼金屬鹽等。 構成上述有機酸鹽之有機酸具體而言可舉出蟻酸、醋 〇 酸、丙酸、酪酸、異酪酸、纈草酸、異纈草酸'三甲基醋 酸、羊油酸等脂肪族單羧酸、草酸、丙二酸、琥珀酸、麩 胺酸、己二酸、庚二酸、軟木酸、馬來酸、富馬酸、檸康 酸、衣康酸、戊烯二酸等脂肪族聚羧酸、甘醇酸、乳酸、 蘋果酸、酒石酸、檸檬酸等脂肪族氧羧酸、安息香酸、甲 基苯甲酸、萘酸等芳香族單羧酸、鄰苯二甲酸、苯三甲酸 等芳香族聚羧酸、水楊酸、沒食子酸等芳香族氧羧酸等。 另外上述之有機酸鹽具體而言可舉出上述有機酸之銨 鹽、或甲基胺、二甲基胺、三甲基胺、乙基胺、二乙基胺 -13- 201038771 、三乙基胺、丙基胺、二丙基胺、三丙基胺、丁基胺、二 丁基胺、三丁基胺、單乙醇胺、二乙醇胺、三乙醇胺、2-(2-胺基乙氧基）乙醇、N-甲基乙醇胺、N-乙基乙醇胺、 N，N-二甲基乙醇胺、N，N-二乙基乙醇胺、羥基胺、Ν,Ν-二 乙基羥基胺、乙二胺、丙二胺、1，3 -丙二胺、四甲基烯二 胺、砒硌、吡咯啉、吡咯啶、嗎啉等胺鹽、四甲基銨氫氧 化物、四乙基銨氫氧化物、三甲基（2-羥基乙基）銨氫氧 化物等四級銨鹽、鈉、鉀等鹼金屬鹽。 本發明更佳之有機酸鹽爲脂肪族單羧酸之銨鹽，可舉 出犠酸銨、醋酸銨、丙酸銨、酪酸銨、異酪酸銨、纈草酸 銨、異纈草酸銨、三甲基醋酸銨、羊油酸銨等。該等有機 酸鹽或容易取得，或爲溶解性高，易於使用。 使用於本發明之有機酸鹽之濃度，由充分控制蝕刻速 率及降低發生光阻滲出之觀點，以0.5〜30重量％之範圍 爲佳，1〜20重量％之範圍更佳。 使用於本發明之界面活性劑係陰離子性界面活性劑、 氟系界面活性劑。具體而言，陰離子性界面活性劑爲聚苯 乙烯磺酸以及/或該等之鹽，或烷基硫酸酯以及/或該等 之鹽’烷基以直鏈狀或分枝鏈狀，碳數8〜18者爲佳，碳 數12〜Η者更佳。另外聚苯乙烯磺酸鹽、烷基硫酸酯鹽 可舉出銨鹽、胺鹽、鹼金屬鹽，而自防止污染之觀點而言 以銨鹽、胺鹽特佳。 另外，氟系界面活性劑係使用全氟鏈烯基苯基醚磺酸 以及/或該等之鹽。鏈烯基以直鏈狀或分枝鏈狀，碳數3 -14- 201038771 〜12者爲佳，碳數6者更佳。 本發明之蝕刻液組成物中’界面活性劑之濃度以 0.0 0 1〜1.0重量％爲佳。由於界面活性劑之濃度未達 0.0 0 1重量％時，添加效果會變爲不充分，而界面活性劑 之濃度超過1 · 〇重量％時，會出現添加效果的飽和、發泡 等問題之情形。 本發明之蝕刻液組成物係對金屬膜進行蝕刻者，特別 〇 適合使用於鋁或鋁合金膜。 使用本發明之蝕刻液組成物之情形，一般而言，蝕刻 溫度爲30〜6(TC，蝕刻時間爲0. 1〜10分鐘左右。但鈾刻 溫度、蝕刻時間可依據鋁或鋁合金膜之厚度等而決定。 本發明之蝕刻方式以浸漬法、噴灑法、沖淋法等各種 方式進行，並未特別限定。 [實施例] 〇 以下以實施例進一步詳細說明本發明之特徵處。然本 發明並未限定於該等實施例。 〈與本發明之實施例有關之餽刻液組成物之調製〉 以如表1所示之比例，混合磷酸、硝酸、有機酸鹽、 界面活性劑及水’調製爲具備本發明要件之鈾刻液組成物 (實施例1〜6 )。 -15- 201038771 I嗽 光阻滲出 〇 〇 〇 〇 〇 〇 表面凹凸不平 〇 〇 〇 〇 〇 〇 錐度角 0 00 00 00 σ\ 蝕刻速率 (nm/min) I 326 VO 307 m 330 \ 335 1 ! 界面活性劑 (重量％) A I I 0.05 B 0.05 C 0.02 A 0.05 A 0.05 Α Ί 0.05 有機酸鹽 (重量％) 醋酸銨 3.5 醋酸銨 3.5 醋酸銨 | 3.5 醋酸銨 5.0 乳酸銨 3.5 酒石酸銨 3.5 硝酸 (重量％) 20.7 1 20.7 20.7 20.4 20.7 -1 20.7 磷酸 (重量％) I 57.0 57.0 57.0 56.2 57.0 1 57.0 實施例1 實施例2 實施例3 1 1 實施例4 -1 實施例5 實施例6 繼饀邂褰K1掛齩：V匿担瓶胆虼 (9載籲磨稍褰鶚)鍫_ _«擗«褰騮_湘：3蘅#1迪胆虼 (寸I〜<Nl脈鏟磨橄遯)顬氍懷糊遯装ϋβιιι: θ「歡趄游胆虼 -16- 201038771 另外，爲了進行比較，以如表2所示之比例，混合磷 酸 '硝酸、有機酸鹽或有機酸及水，調製爲不具備本發明 要件之比較例之蝕刻液組成物（比較例1〜9 )。 尙且’該比較例1〜9之蝕刻液組成物，如表2所示 般含有磷酸、硝酸 '有機酸鹽或有機酸及水，但未含有# 面活性劑，係本發明之範圍外之蝕刻液組成物。201038771 VI. Description of the Invention: [Technical Field] The present invention relates to an aluminum film or an aluminum alloy which is provided on a constituent substrate in detail for a metal such as an aluminum film or an aluminum alloy film. Things.先前 [Prior Art] A method of forming a wiring on the surface of various electronic substrates or the like has been known from the past. First, an aluminum alloy film is formed on a substrate. Next, the surface grease is opened by exposure and development, and then the pattern mask can be used for the aluminum film or the aluminum alloy film. However, in recent years, the requirements for semiconductor mounting and high performance have been met. When the height is increased, the thickness of the electrode or the like is increased, and the high performance is followed by the formation of a wiring such as a side edge plate or a substrate on which wiring is etched, for example, an electronic component is formed, and the film is etched. An etching liquid element for etching a metal film such as a film of a semiconductor device or a liquid crystal display device, which is an aluminum film for etching a wire/electrode material (substrate) as described below on a semiconductor substrate, glass, or an electrode. The photosensitive tree is coated with a photolithography technique to form a pattern mask. Etching is performed on an aluminum film or an aluminum alloy film. The wiring and electrode arrangement for forming the desired pattern and the liquid crystal display device are small for the product, and the wiring requirements for the devices are also becoming stricter. Therefore, in the technical field, in order to correspond to multilayering, and forming a wiring substrate (for example, an absolute angle (hereinafter referred to as a taper-5 - 201038771 taper angle), a shape of less than 90° is formed (cone) It is strongly desired to control the cross-sectional shape of the wiring. Due to the recent increase in density and miniaturization of the pattern, the wiring material needs to have low electrical resistance, etc., and aluminum or aluminum alloy is widely used as a wiring material. In order to reduce the signal delay, aluminum or aluminum alloy is used as the material of the underlying wiring. Since the upper wiring and the lower wiring are to be insulated, the aluminum wiring or the aluminum alloy wiring is applied to the lower layer, and the insulating layer is formed by any method. In this case, the aluminum wiring or the aluminum alloy wiring as the upper wiring is formed. In this case, in order to improve the coating property of the insulating layer formed thereon, it is necessary to control the cross-sectional shape of the wiring to be tapered. At the time, the controllability of the cross-sectional shape of the aluminum wiring or the aluminum alloy wiring of the lower layer is important, and the cross-sectional shape is not tapered. When the wire is used, or when the taper angle 0 of the wire is outside the desired range, the aluminum wiring or the aluminum alloy wiring of the upper layer may be broken, and the crack generated by the insulating layer may be the upper layer wiring and the lower layer wiring. In the case of a short circuit, problems such as reliability can be reduced. Generally, when a tapered wiring is formed by etching, an aqueous solution of phosphoric acid/nitric acid/acetic acid is used as an etching liquid, and etching can be performed by an aluminum film or an aluminum alloy film. For example, a mixture of phosphoric acid/nitric acid/acetic acid/water having a capacity ratio of 16:2 to 8:2:1 is used to expose the photoresist as a mask. The development process forms a predetermined wiring shape. After patterning, the post-exposure bake is performed after the baking temperature of the photomask having the photoresist of the above-mentioned -6-201038771 and the metal film is sufficiently adhered, and the adhesion to the metal film is used. When an excellent mask is etched, the side surface of the wiring can be obtained, and the angle (taper angle) 形成 formed on the surface of the substrate (for example, an insulating board or a substrate) forming the wiring is less than 90° and close to 90°. (Vertical) wiring. However, it has been reported that when the baking temperature of the photoresist is lower than the appropriate temperature, the adhesion between the metal film and the mask becomes insufficient, and the barrier film of the photoresist and the metal film invades the etching liquid. The etched surface of the metal film is etched on the upper surface side of the metal film, and the angle formed by the side surface of the wiring and the upper surface of the wiring becomes large, and the side surface on which the wiring is formed is a gently tapered single-layer tapered wiring, and the etching liquid is used. When the concentration of nitric acid is further increased, the taper angle becomes smaller (refer to Patent Document 1). Conversely, when the concentration of nitric acid is low, a single-layer tapered shape having a large taper angle is formed, and when the concentration of nitric acid is increased, light is increased. The etching rate of the interface between the barrier and the metal film becomes high, and a single layer having a taper angle at the interface side of the photoresist and the metal film is formed, and a taper angle is formed closer to the substrate side than the single layer. In the case of a two-layered layer having a tapered shape, the wiring having a tapered shape having a small inclination is formed when the concentration of nitric acid is increased (see Patent Document 2, Patent Document 3). However, when the concentration of nitric acid in the etching solution is increased, the etching rate of the aluminum film or the aluminum alloy film is also increased, but the controllability of the uranium engraving is lowered, and it is difficult to obtain a wiring having a tapered shape with good controllability. In addition, when the concentration of nitric acid is high in the etching solution of the phosphoric acid/nitric acid/acetic acid/water mixed solution, the photoresist damage caused by nitric acid may occur, and the crack may be confirmed on the resist surface of the light 201038771, but the resistive surface may be suppressed. In the case of a crack, and the metal surface is not confirmed to have an etch mark (refer to Patent Document 2), there is a report that the photoresist shrinkage due to the etching liquid can be limited to a certain condition (Patent Document 3). However, when the concentration of nitric acid is high, after etching, when the surface of the photoresist is observed by an electron microscope (SEM), in addition to the crack on the surface of the photoresist, the inside of the etched surface, that is, the photoresist and the metal film which are not etched, At the interface, an etching mark (hereinafter referred to as "etching liquid oozing") due to penetration of the etching liquid was confirmed. Therefore, when the phenomenon in which the etching liquid bleeds out occurs, the surface of the metal film covering the photoresist is etched to become uneven, and the problem that the desired shape cannot be obtained occurs. In addition, in the progress of the miniaturization of the semiconductor process, a method for obtaining a high-quality metal film having excellent flatness and smoothness on the surface of the metal film without unevenness has been sought for the surface of the metal film after uranium engraving. As an attempt to improve the surface of the metal film after etching by adding an additive to the etching liquid, it has been proposed to prevent the etching pair from being protected from the smoothness of the etching surface by, for example, adhering bubbles to the surface of the metal film in the etching step. The damage is caused by the adhesion of hydrogen generated by the nitric acid to the metal film to the surface of the metal film, and the addition of the trialkylamine oxide system to the etching solution containing phosphoric acid/nitric acid/acetic acid/water as a main component. An etchant composition of a surfactant (for example, Patent Document 4). Further, in order to improve the fine workability of the etching liquid, it is known to add a surfactant for the purpose of improving the wettability (for example, Patent Document 5). -8- 201038771 However, the fact is that in the above-mentioned Patent Documents 4 and 5, there is no proposal for a metal film which can form a tapered shape of a high-quality metal surface having no unevenness and excellent smoothness. In addition, etching of an alkyl sulphate or a perfluoroalkenyl phenyl ether sulfonic acid and a surfactant of these salts has been proposed in an etching solution containing phosphoric acid/nitric acid/acetic acid/water as a main component. Liquid (eg patent document 6). However, in the case of using the etching liquid of Patent Document 6, it is actually possible to achieve a low taper angle, but the problem of unevenness of the surface of the aluminum film and leakage of the photoresist does not reveal a sufficient solution. As described above, it has been found that a high-quality etched surface having excellent taper angle, no unevenness, no unevenness on the surface, excellent flatness and smoothness, and a tapered shape can be formed. Etched liquid composition of a metal film having a low taper angle [Previous Technical Document] Ο [Patent Document] Patent Document 1: Japanese Laid-Open Patent Publication No. Hei No. Hei 7-176825 Patent Document 2: Japanese Patent Laid-Open No. Hei 6-122982 Patent Document 3: Special JP-A-2001-77098 Patent Document 4: Japanese Patent Publication No. Hei No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. In order to solve the above-mentioned problems, the present invention has been made in view of the above-mentioned problems. In order to obtain a disconnection or short circuit for preventing the upper layer wiring of a semiconductor device having multilayer wiring, the present invention has excellent yield and excellent reliability. The semiconductor device 'is excellent in controllability for providing a metal film, particularly an aluminum or aluminum alloy film, and can be etched without causing photoresist leakage, and a suitable tapered shape can be obtained. In order to solve the above problems, the inventors of the present invention conducted an intensive and repeated review to make the following etching liquid composition inventions. Reached to completion. That is, the etching liquid composition of the present invention is an etchant composition for etching a metal film on a substrate, and is characterized by containing an aqueous solution of phosphoric acid, nitric acid, an organic acid salt, and a surfactant. Further, in the etching liquid composition of the present invention, the above organic acid salt is selected from the group consisting of an aliphatic monocarboxylic acid, an aliphatic polycarboxylic acid, an aliphatic oxycarboxylic acid 'aromatic monocarboxylic acid, and an aromatic polycarboxylic acid. Preferably, at least one of the aromatic oxycarboxylic acid groups is at least one selected from the group consisting of an ammonium salt, an amine salt, a fourth-order ammonium salt, and an alkali metal salt. In the etching liquid composition of the present invention, the concentration of the organic acid salt is preferably from 0.1 to 20% by weight. The above surfactant is preferably an anionic surfactant and/or a fluorine-based surfactant. -10 - 201038771 The aforementioned anionic surfactant is preferably a polystyrenesulfonic acid and/or a salt thereof, or an alkyl sulfate and/or a salt thereof. Further, the fluorine-based surfactant is preferably a perfluoroalkenylphenyl ethersulfonic acid and/or a salt thereof. The concentration of the aforementioned surfactant is preferably 0.001 to 1.0% by weight. Further, the etching liquid composition of the present invention is particularly preferably used for etching a metal film made of aluminum or aluminum alloy. 0 [Effects of the Invention] When the etching liquid composition of the present invention is used for metal film etching, the etching rate can be controlled. As a result, by etching the metal film using the etching liquid composition of the present invention, the shape after etching of the metal film can be controlled, and wiring and electrodes having a low taper angle shape can be formed. The organic acid salt can be grouped by using at least an aliphatic monocarboxylic acid, an aliphatic polycarboxylic acid, an aliphatic oxycarboxylic acid, an aromatic monocarboxylic acid, an aromatic polycarboxylic acid, or an aromatic quinone oxycarboxylic acid. At least one organic acid salt selected from the group consisting of an ammonium salt, an amine salt, a fourth-order ammonium salt, and an alkali metal salt, can control the shape of the metal film after etching, and can form a shape having a desired low taper angle. Wiring and electrodes. Further, in the etching liquid composition of the present invention, by setting the concentration of the organic acid salt to a range of 0.1 to 20% by weight, the shape after etching of the metal film can be surely controlled, and a desired low taper angle shape can be formed. Wiring and electrodes. Further, by using the surfactant as an anionic surfactant, -11 - 201038771 and/or a fluorine-based surfactant, it is possible to form a wiring and an electrode having a desired low taper angle shape with excellent efficiency. When the anionic surfactant is a polystyrene sulfonic acid and/or a salt thereof, or an alkyl sulfate and/or a salt thereof, the desired low taper angle can be reliably formed with excellent efficiency. Shape wiring and electrodes. Further, when perfluoroalkenyl phenyl ether sulfonic acid and/or these salts are used as the fluorine-based surfactant, wirings and electrodes having a desired low taper angle shape can be reliably formed with excellent efficiency. Further, by setting the concentration of the surfactant to 0.01 to 1.0% by weight, it is possible to surely perform efficient etching and form wirings and electrodes having a desired low taper angle shape. Further, when the metal film made of aluminum or aluminum alloy is etched by using the etching liquid composition of the present invention, the etching rate and the shape after etching can be more reliably controlled. Therefore, as a result, it is possible to obtain a wiring and an electrode which have a desired low taper angle and have a stable tapered shape. Further, the etching liquid composition of the metal film of the present invention is characterized in that no bleeding of the photoresist occurs even when the concentration of nitric acid is high. Further, in the etching liquid composition of the present invention, even if the concentration of nitric acid is high, the number of cracks visible on the surface of the photoresist after etching is less than that in the case of using a conventional etching liquid, and the photoresist can be suppressed. Deterioration. By using the etching liquid composition of the metal film of the present invention, even when the taper angle is small, the etching surface formed by etching the metal film can be formed to form a surface having no uneven surface and a flat surface. -12- 201038771 When etching is performed using the etching liquid composition of the metal film of the present invention, the fluctuation of the taper angle can be prevented according to the processing temperature and processing time of the chemical solution previously processed by the patterning of the photoresist. [Embodiment] Hereinafter, embodiments of the present invention will be described. In the etching liquid composition of the present invention, the phosphoric acid preferably has a concentration of 30 to 80% by weight, more preferably 40 to 70% by weight. In the etching liquid composition of the present invention, the concentration of nitric acid is preferably from 1 to 40% by weight, more preferably from 5 to 30% by weight. The organic acid salt used in the etching liquid composition of the present invention may, for example, be an aliphatic monocarboxylic acid, an aliphatic polycarboxylic acid, an aliphatic oxycarboxylic acid, an aromatic monocarboxylic acid, an aromatic polycarboxylic acid or an aromatic oxycarboxylic acid. An ammonium salt, an amine salt, a fourth-order ammonium salt, an alkali metal salt or the like of an acid or the like. Specific examples of the organic acid constituting the organic acid salt include aliphatic monocarboxylic acids such as formic acid, acetoic acid, propionic acid, butyric acid, isotylic acid, shikimic acid, isoxamic acid 'trimethylacetic acid, and lanolinic acid. Aliphatic polycarboxylic acids such as oxalic acid, malonic acid, succinic acid, glutamic acid, adipic acid, pimelic acid, softwood acid, maleic acid, fumaric acid, citraconic acid, itaconic acid, glutaconic acid An aromatic polycarboxylic acid such as glycolic acid, lactic acid, malic acid, tartaric acid or citric acid, aromatic monocarboxylic acid such as benzoic acid, methylbenzoic acid or naphthoic acid, phthalic acid or benzenetricarboxylic acid An aromatic oxycarboxylic acid such as a carboxylic acid, a salicylic acid or a gallic acid. Further, the above organic acid salt may specifically be an ammonium salt of the above organic acid, or a methylamine, dimethylamine, trimethylamine, ethylamine, diethylamine-13-201038771, or triethyl. Amine, propylamine, dipropylamine, tripropylamine, butylamine, dibutylamine, tributylamine, monoethanolamine, diethanolamine, triethanolamine, 2-(2-aminoethoxy) Ethanol, N-methylethanolamine, N-ethylethanolamine, N,N-dimethylethanolamine, N,N-diethylethanolamine, hydroxylamine, hydrazine, hydrazine-diethylhydroxylamine, ethylenediamine, propylene Diamine, 1,3 -propylenediamine, tetramethylenediamine, anthracene, pyrroline, pyrrolidine, morpholine and other amine salts, tetramethylammonium hydroxide, tetraethylammonium hydroxide, three a quaternary ammonium salt such as methyl (2-hydroxyethyl) ammonium hydroxide or an alkali metal salt such as sodium or potassium. More preferably, the organic acid salt of the present invention is an ammonium salt of an aliphatic monocarboxylic acid, and examples thereof include ammonium citrate, ammonium acetate, ammonium propionate, ammonium butyrate, ammonium isotinate, ammonium oxalate, ammonium isovacurate, and trimethyl. Ammonium acetate, ammonium oleate and the like. These organic acid salts are either readily available or have high solubility and are easy to use. The concentration of the organic acid salt used in the present invention is preferably in the range of 0.5 to 30% by weight, more preferably 1 to 20% by weight, from the viewpoint of sufficiently controlling the etching rate and reducing the occurrence of photoresist bleeding. The surfactant used in the present invention is an anionic surfactant or a fluorine-based surfactant. Specifically, the anionic surfactant is polystyrenesulfonic acid and/or the salt thereof, or the alkyl sulfate and/or the salt 'alkyl group is linear or branched, and the number of carbon atoms 8 to 18 are better, and carbon number 12 is better. Further, the polystyrene sulfonate and the alkyl sulfate salt may be an ammonium salt, an amine salt or an alkali metal salt, and an ammonium salt or an amine salt is particularly preferable from the viewpoint of preventing contamination. Further, as the fluorine-based surfactant, perfluoroalkenylphenyl ethersulfonic acid and/or the salts thereof are used. The alkenyl group is linear or branched, and the carbon number is from 3 to 14 to 201038771 to 12, and the carbon number is preferably 6. The concentration of the surfactant in the composition of the etching solution of the present invention is preferably from 0.001 to 1.0% by weight. When the concentration of the surfactant is less than 0.01% by weight, the effect of addition may become insufficient, and when the concentration of the surfactant exceeds 1 · 〇% by weight, problems such as saturation and foaming of the additive effect may occur. . The etching liquid composition of the present invention is used for etching a metal film, and is particularly suitable for use in an aluminum or aluminum alloy film. In the case of using the etchant composition of the present invention, the etching temperature is generally 30 to 6 (TC, and the etching time is about 0.1 to 10 minutes. However, the uranium engraving temperature and etching time may be based on aluminum or aluminum alloy film. The etching method of the present invention is not limited to a variety of methods such as a dipping method, a spraying method, and a shower method. [Examples] Hereinafter, the features of the present invention will be described in further detail with reference to examples. The invention is not limited to the examples. <Preparation of composition of feed solution relating to an embodiment of the present invention> Phosphoric acid, nitric acid, organic acid salt, surfactant, and water are mixed in a ratio as shown in Table 1. 'Modulation is a uranium engraving composition having the requirements of the present invention (Examples 1 to 6). -15- 201038771 I 嗽 Photoresist bleed out 凹凸 surface unevenness taper angle 0 00 00 00 σ\ Etch rate (nm/min) I 326 VO 307 m 330 \ 335 1 ! Surfactant (% by weight) AII 0.05 B 0.05 C 0.02 A 0.05 A 0.05 Α Ί 0.05 Organic acid salt (% by weight) Ammonium acetate 3.5 Ammonium acetate 3.5 acetic acid Ammonium | 3.5 Ammonium acetate 5.0 Ammonium lactate 3.5 Ammonium tartrate 3.5 Nitric acid (% by weight) 20.7 1 20.7 20.7 20.4 20.7 -1 20.7 Phosphoric acid (% by weight) I 57.0 57.0 57.0 56.2 57.0 1 57.0 Example 1 Example 2 Example 3 1 1 Example 4 -1 Example 5 Example 6 Following the 饀邂褰K1 齩 V: V 担 瓶 虼 9 9 9 9 9 _ _ « « « « « « « « Cholesterol (inch I~<Nl shovel shovel) 顬氍 ι ι ι ι ι ι ι ι ι ι ι ι ι ι ι - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - The phosphoric acid 'nitric acid, an organic acid salt, an organic acid, and water were prepared as an etching liquid composition of Comparative Example (Comparative Examples 1 to 9) which did not have the requirements of the present invention. Moreover, the etching liquid compositions of Comparative Examples 1 to 9 were prepared. As shown in Table 2, phosphoric acid, nitric acid 'organic acid salt or organic acid and water, but not containing # surfactant, are etchant compositions outside the scope of the present invention.
-17- 201038771-17- 201038771
光阻滲出 〇 <3 X < X X 〇 < 〇 <] 表面凹凸不平 〇 <] X 〇 <] 〇 < 侧C OiiJ 稱 〇 〇\ CS (N CN IT) 蝕刻速率 (nm/min) m 00 (N m (N (N S Os ΓΠ in m 〇 CN Ο m m 界面活性劑 | (重量％) 未添加 未添加 未添加 未添加 未添加 未添加 未添加 未添加 1 未添加 有機酸鹽或有機酸 (重量％) 醋酸銨 3.5 1_ 醋酸 3.5 醋酸 3.5 醋酸 3.5 醋酸 | 3.5 醋酸銨 5.0 醋酸 5.0 乳酸銨 5.0 乳酸 5.0 i硝酸 [(重量％) 卜 卜 卜 卜 寸 寸 卜 磷酸 (重量％) 〇 〇 〇 卜· 〇 〇* 〇 CN CN yr) 〇 〇 比較例1 比較例2 比較例3 比較例4 比較例5 比較例6 -1 比較例7 1 1 比較例8 比較例9 -18- 201038771 使用表1、2之各蝕刻液組成物，根據以下說明之方 法，進行金屬膜蝕刻的同時，針對以下之各項目進行測定 、觀察，並評價其特性。 〈鋁膜之蝕刻速率之測定〉 於基板（Si基板）上以濺鍍法，使鋁膜成膜爲膜厚 40Onm 〇 〇 其次，於形成於基板上膜厚400nm之銘膜上，塗布 光阻後形成光阻圖案。 接著，將該基板使用表1及2所示之蝕刻液組成物於 溫度40 °C之條件下，進行數分鐘（可測定蝕刻速率之時 間）之浸漬蝕刻。 蝕刻終止後，進行水洗、乾燥步驟，並於剝離光阻後 ，以探針式膜厚計測定蝕刻量，求得蝕刻速率。 〇 〈鋁膜之錐度角之測定〉 於基板（Si基板）上以濺鍍法，使鋁膜成膜爲膜厚 400nm 〇 其次，於鋁膜上，塗布光阻，進行曝光、顯像後形成 光阻圖案。 接著，將形成光阻圖案之基板，使用蝕刻液於溫度 4 0 °C之條件下，以由蝕刻速率計算出之恰當蝕刻時間的 1.1倍時間，進行浸漬處理。 其後，進行水洗、乾燥步驟，並於剝離光阻後，以電 -19- 201038771 子顯微鏡（SEM )觀察鋁膜之鈾刻狀態，測定因進行蝕刻 形成具有錐狀形狀之鋁膜之錐度角。 此處所指之錐度角係如圖1所示般，由形成於基板1 上之鋁膜2之側面2a，與形成鋁膜2之基板1之表面1 a 所構成之角度Θ。 〈鋁膜之蝕刻面的表面凹凸以及光阻滲出之觀察〉 於基板（Si基板）上以濺鎪法，使鋁膜成膜爲膜厚 4 0 0 nm 〇 其次，於鋁膜上，塗布光阻，進行曝光、顯像後形成 光阻圖案。 接著，將形成光阻圖案之基板，使用蝕刻液於溫度 40 °C之條件下，以由鈾刻速率計算出之恰當飩刻時間的 1 .1倍時間，進行浸漬處理。 其後，進行水洗、乾燥步驟，並於剝離光阻後，以電 子顯微鏡（SEM)觀察鋁膜之蝕刻面的表面凹凸以及光阻 滲出之狀態。 針對各實施例之試料（表1之實施例1〜6 )所進行 之錐度角、表面凹凸、光阻滲出之測定，觀察結果合倂示 於表1。 另外，針對同樣的比較例之試料（比較例1〜9 )所 進行之錐度角、表面凹凸、光阻滲出之測定，觀察結果合 倂示於表2。 於表1及2之表面凹凸、及光阻滲出之評價，未發現 -20- 201038771 缺陷者評〇，發現若干缺陷者評△，發現缺陷者評x，缺 陷非常顯著者評XX。 使用如表1所示般，混合了磷酸、硝酸、有機酸鹽、 界面活性劑及水之實施例1〜6之鈾刻液組成物，對鋁膜 進行蝕刻時，可得可獲得任意低錐度角，同時全無表面凹 凸及光阻滲出之平滑的蝕刻面。 且針對表1之實施例1〜6之試料的錐度角分別爲接 〇 近目標値者，可得知藉由蝕刻液組成物之組成及蝕刻條件 ’能夠獲得如計畫般之具有低錐度角之金屬膜（鋁膜）。 根據該結果，確認具備本發明要件之鈾刻液組成物， 對鋁膜等金屬膜的控制性佳，且不會產生光阻滲出而可進 行蝕刻，可獲得具有適當的錐度角形狀，與具有優異的平 坦性、平滑性之金屬膜之優異的蝕刻液組成物。 反之，如表2所示般，雖含有有機酸鹽或有機酸，但 並未混合界面活性劑，使用比較例1〜9之蝕刻液組成物 Ο 進行蝕刻時，確認有難以實現低錐度角形狀（比較例1、 6、8)、或表面產生凹凸不平（比較例2、3、4、5、7、 9 )、或發現顯著的光阻滲出（比較例5 )等各種問題點 〇 由上述實施例之試料與比較例之試料之比較，本發明 之蝕刻液組成物之意義性相當明顯，可得知藉由使用本發 明之蝕刻液組成物，可進行效率佳且精度高之蝕刻。 於上述實施例中舉金屬膜爲鋁膜之情形爲例進行說明 ，但本發明亦可適用於對銘合金膜進行蝕刻之情形。 -21 - 201038771 本發明進而於其他的觀點’亦未限定於上述之實施例 ’可於有關有機酸鹽之種類、界面活性劑之種類、或各種 成分之混合比例、溫度及時間等蝕刻條件、金屬膜之厚度 及配設方式等，於發明之範圍內，加入各種應用、變形。 [產業上的可利用性] 如上所述，藉由使用本發明之蝕刻液組成物，可進行 對金屬膜控制性佳，且可獲得如計畫般之具有低錐度角形 狀之蝕刻。 另外，可獲得蝕刻面爲無凹凸不平且爲平坦面，同時 亦可防止發生光阻滲出。 因此，本發明可廣泛適用於必須爲低電阻且具有低錐 度角形狀之配線膜及電極之多層配線等技術領域，亦即爲 圖案必須高密度化與微細化之技術領域。 【圖式簡單說明】 [圖1 ]說明使用發明之蝕刻液組成物所形成之金屬膜 (鋁膜）之錐度角之圖。 【主要元件符號說明】 1 :基板 la :基板之表面 2 :鋁膜 2a :鋁膜之側面 -22- 201038771 θ :錐度角Photoresistance 〇<3 X < XX 〇<〇<] Surface unevenness <] X 〇<] 〇< Side C OiiJ 〇〇\ CS (N CN IT) Etching rate (nm /min) m 00 (N m (N (NS Os ΓΠ in m 〇CN Ο mm surfactant | (% by weight) not added, no added, no added, no added, no added, no added, no added, no added, no added organic acid salt Or organic acid (% by weight) ammonium acetate 3.5 1_ acetic acid 3.5 acetic acid 3.5 acetic acid 3.5 acetic acid | 3.5 ammonium acetate 5.0 acetic acid 5.0 ammonium lactate 5.0 lactic acid 5.0 i nitric acid [(% by weight) 〇卜·〇〇* 〇CN CN yr) 〇〇Comparative Example 1 Comparative Example 2 Comparative Example 3 Comparative Example 4 Comparative Example 5 Comparative Example 6 -1 Comparative Example 7 1 1 Comparative Example 8 Comparative Example 9 -18- 201038771 Each of the etching liquid compositions of 1 and 2 was subjected to metal film etching, and the following items were measured and observed, and the characteristics thereof were evaluated according to the following methods. <Measurement of etching rate of aluminum film> On the substrate ( On the Si substrate), the aluminum film is formed by sputtering. The film thickness was 40 nm. Next, a photoresist pattern was formed on the film formed on the substrate with a film thickness of 400 nm by applying a photoresist. Next, the substrate was subjected to the etching liquid compositions shown in Tables 1 and 2 at a temperature of 40. Under the condition of °C, the immersion etching is performed for several minutes (the time during which the etching rate can be measured). After the etching is terminated, the water washing and drying steps are performed, and after the photoresist is removed, the etching amount is measured by a probe type film thickness meter. Etching rate: 测定 <Measurement of taper angle of aluminum film> On the substrate (Si substrate), an aluminum film was formed by sputtering to a film thickness of 400 nm, and then a photoresist was applied on the aluminum film to expose it. After the development, a photoresist pattern was formed. Next, the substrate on which the photoresist pattern was formed was subjected to an immersion treatment using an etching solution at a temperature of 40 ° C for 1.1 times the appropriate etching time calculated from the etching rate. Thereafter, a water washing and drying step was carried out, and after the photoresist was peeled off, the uranium engraved state of the aluminum film was observed by a sub-microscope (SEM) of an electric-19-201038771, and the taper angle of the aluminum film having a tapered shape by etching was measured. The taper angle referred to herein is an angle Θ formed by the side surface 2a of the aluminum film 2 formed on the substrate 1 and the surface 1a of the substrate 1 on which the aluminum film 2 is formed, as shown in Fig. 1. Observation of surface irregularities and photoresist bleed on the etched surface. On the substrate (Si substrate), the aluminum film is formed into a film thickness of 4 0 0 nm by sputtering method. Next, a photoresist is applied on the aluminum film to expose the film. After the development, a photoresist pattern is formed. Next, the substrate on which the photoresist pattern was formed was subjected to immersion treatment using an etching solution at a temperature of 40 ° C at a time of 1.1 times the appropriate etching time calculated from the uranium engraving rate. Thereafter, the steps of washing with water and drying were carried out, and after the photoresist was removed, the surface irregularities of the etched surface of the aluminum film and the state of photoresist bleed out were observed by an electron microscope (SEM). The measurement results of the taper angle, the surface unevenness, and the photoresist bleed of the samples of the respective examples (Examples 1 to 6 of Table 1) are shown in Table 1. Further, the measurement results of the taper angle, the surface unevenness, and the photoresist bleed of the samples of Comparative Example (Comparative Examples 1 to 9) are shown in Table 2. In the evaluation of surface irregularities and photoresist bleed in Tables 1 and 2, no -20-201038771 defects were found, and some defects were found, △, and the defects were found to be x, and the defects were very significant. The uranium engraving compositions of Examples 1 to 6 in which phosphoric acid, nitric acid, an organic acid salt, a surfactant, and water were mixed as shown in Table 1 were used, and when the aluminum film was etched, any low taper was obtained. Angle, at the same time, there is no smooth etched surface with surface irregularities and photoresist bleed out. Further, the taper angles of the samples of Examples 1 to 6 of Table 1 were respectively close to the target, and it was found that the composition of the etching liquid composition and the etching conditions were able to obtain a low taper angle as planned. Metal film (aluminum film). According to the results, it was confirmed that the uranium engraving composition having the requirements of the present invention has excellent controllability against a metal film such as an aluminum film, and can be etched without causing photoresist leakage, and an appropriate taper angle shape can be obtained. An excellent etching liquid composition of a metal film excellent in flatness and smoothness. On the other hand, as shown in Table 2, although an organic acid salt or an organic acid was contained, the surfactant was not mixed, and when the etching liquid composition of Comparative Examples 1 to 9 was used for etching, it was confirmed that it was difficult to achieve a low taper angle shape. (Comparative Examples 1, 6, and 8), or various problems such as unevenness on the surface (Comparative Examples 2, 3, 4, 5, 7, and 9) or significant photoresist bleed (Comparative Example 5) were observed. Comparing the samples of the examples with the samples of the comparative examples, the significance of the etching liquid composition of the present invention is quite remarkable, and it has been found that by using the etching liquid composition of the present invention, etching with high efficiency and high precision can be performed. In the above embodiment, the case where the metal film is an aluminum film will be described as an example, but the present invention is also applicable to the case where the alloy film is etched. Further, the present invention is not limited to the above-described embodiments, and the etching conditions such as the type of the organic acid salt, the type of the surfactant, the mixing ratio of the various components, the temperature and the time, and the like may be The thickness and arrangement of the metal film, etc., are added to various applications and deformations within the scope of the invention. [Industrial Applicability] As described above, by using the etching liquid composition of the present invention, it is possible to perform etching with good controllability on a metal film and to obtain a low-tapered shape like a plan. Further, it is possible to obtain an etched surface which is free from irregularities and which is a flat surface, and also prevents occurrence of photoresist bleed. Therefore, the present invention can be widely applied to a technical field such as a wiring film and an electrode multilayer wiring which are required to have a low electrical resistance and a low taper angle shape, that is, a technical field in which the pattern must be increased in density and miniaturization. BRIEF DESCRIPTION OF THE DRAWINGS [Fig. 1] A diagram showing a taper angle of a metal film (aluminum film) formed using the etching liquid composition of the invention. [Main component symbol description] 1 : Substrate la : Surface of the substrate 2 : Aluminum film 2a : Side of the aluminum film -22- 201038771 θ : Taper angle
-23-twenty three