TW201034849A - Multilayer body, method for producing same, electronic device member, and electronic device - Google Patents

Abstract

Disclosed is a multilayer body which comprises at least a conductor layer and a gas barrier layer that is configured from a material containing oxygen atoms, carbon atoms and silicon atoms. The multilayer body is characterized in that the present ratio of oxygen atoms in the gas barrier layer gradually decreases from the surface of the gas barrier layer to the depth direction, while the present ratio of carbon atoms gradually increases. Also disclosed are a method for producing the multilayer body, an electronic device member which is composed of the multilayer body, and an electronic device which comprises the electronic device member. The multilayer body exhibits excellent gas barrier properties and excellent interlayer adhesion, while comprising a conductor layer with high surface smoothness. Since the multilayer body can be flexible and light-weighted, the multilayer body is suitable for use as an electronic device member for an organic EL display, a solar cell and the like. In addition, since the multilayer body can be produced by a roll-to-roll mass production process, the multilayer body can be produced at low cost.

Description

201034849 6. TECHNOLOGICAL FIELD OF THE INVENTION [Technical Field] The present invention relates to a laminate having excellent gas barrier properties and excellent interlayer adhesion, a gas barrier layer and a conductor layer, and a method for producing the same, thereby laminating The electronic device is made up of a body, and an electronic device including the structure for the electronic device.先前 〇 [Prior Art] In the past, in order to achieve thinness, light weight, flexibility, etc., it has been used as a substrate with jade. However, compared with glass, plastic film is easily transmitted through water vapor or oxygen, which is liable to cause problems inside the display. In the case of the inferiority of the heart, and the problem of low surface smoothness, 2 solve the problem. [Patent Document 2, etc. proposes the surface layer smoothing layer and the inorganic barrier (4), and the conductive electrode base of the electrode layer. material. The conductive energy is not:" and: the gas barrier properties of the conductive electrode substrate described in these documents are sufficiently satisfactory, and the improvement is required. Further, the layer and the inorganic layer are required. The barrier layer 'these layers and the electrode (the conductive electrode is in contact with each other, so a functional film must be provided for the bonding between the layers (2) in each layer, the process becomes cumbersome, and there is a problem that the filming is violated. In connection with the present invention, in Patent Document 3, it is recorded on a surface of a plastic film of 3, 2010, 34, 849, by using at least a rare gas, hydrogen, a kind of scorpion, and aa ι. The plasma ion injection of the gas from the source of the source is injected into the shore, and the ion layer formed by the 彤Jie female is opened/formed with a gas barrier layer and a transparent film. θ Conductive gas barrier Previous technical literature Patent literature [Patent Literature [Patent Document 2] Japanese Laid-Open Patent Publication No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. Excellent in view of the above prior art Gas, and excellent interlayer adhesion = laminated body of conductor layer, potted layer and sub-protection of Fan Tianyi 1 method, the electricity formed by the layered body " each and including the structure of the electronic device The inventors of the present invention conducted an intensive review for understanding, ash, society, and phase 4', and found that it is composed of materials containing at least oxygen, 'anode and cesium atoms. In the direction of the surface, the ratio of the presence of cesium atoms to the salty degree, the presence of carbon atoms, the gradual increase of the layer (gas barrier layer), and the conductance. The present invention has been found to have excellent gas barrier properties and interlayer adhesion. Further, the inventors of the present invention have found that the above-mentioned polyorganism-containing stone has a molded article of a layer containing a compound of polyorganisms in the surface portion. The invention is finally completed by implanting ions into the surface of the layer of the oxygen-based compound 201034849, and the gas barrier layer can be formed simply and efficiently. Thus, according to the first aspect of the present invention, the following is provided. Said (1) ~ (7) a laminate comprising a laminate of a gas barrier layer and a conductor layer composed of a material containing at least an oxygen atom and a carbon atom of a carbon atom, the powder being derived from the gas barrier layer The surface of the surface is oriented toward the depth direction m 存在 The proportion of oxygen atoms in the ruthenium layer is gradually reduced, and the proportion of carbon atoms is gradually increased. () as in (1). The layered body contained in the surface layer of the gas barrier layer In the corpse, the ratio of the existence of the atom to the oxygen atom, the cesium atom, and the (tetra) atom is i. ~70%, the ratio of the presence of the carbon atom is . 5 to 3 5 %. (3) The laminate described in (1), T just described in the X-ray photoelectron enthalpy of the surface layer of the gas barrier layer, the 2ρ electron domain of the germanium atom The peak position of the bond energy is 102~i〇4eV. (4) As in (1) the laminated body of the plant, the nail has an inorganic compound layer. (5) The layered body according to (1), wherein the gas barrier layer is in a layer containing a polyorganosiloxane compound, and is a layer obtained by "injecting ions" into the layer. (6) (5): a laminated body in which the aforementioned ion system is composed of nitrogen, oxygen,

The to-A type of milk selected by the % group consisting of argon and helium is ionized. (7) If the laminate of (5) c is planted, the compound is a compound of the polyorganotazoline, and the polyorganism of the repeating unit is not included.

(8)

Each of which independently represents a hydrogen atom, an unsubstituted or alkenyl group having a mute substitution or a substituent, an unsubstituted or a formula, an alkyl group of a Rx, a substituent, an aryl group having a substituent, etc., Hydrolyzable group. Still, the plural of formula (a)

Rx, the plural of the formula (b) & y are the same or different. However, none of the Rx systems of the above formula (a) are hydrogen atoms. (11) The laminated body according to the second aspect of the present invention provides (8) a manufacturing method. (8) A method for producing a laminate having a gas barrier layer and a conductor layer, which has a molded article having a layer containing a polyorganosiloxane compound at a surface portion The step (I) of injecting ions into the layer containing the polyorganosiloxane compound to form the gas barrier layer. The gas of at least one of the methods for producing a laminate according to the above (1), (9), wherein the gas is selected from the group consisting of nitrogen, oxygen, argon and helium, is ionized and injected. 201034849 (1 0) The manufacturing method described in (8), and the step (I) of the sequel to the sequel is the ion implantation. (1) The production method according to the above (8), wherein the step (1) is carried out by transporting a long strip-shaped molded article having a layer containing a polyorgano compound in a surface in a predetermined direction, and is mixed with a compound; The step of ion-implanting into the layer containing the polyorganosiloxane compound. According to a third aspect of the present invention, there is provided a structure for an electronic device according to (2) (12), a structure for an electronic device, and a laminate according to the item (1) to (7) Made into. According to a fourth aspect of the present invention, there is provided an electronic device (13) according to the above (13), which is characterized in that the electronic device has the structure effect of the invention, and the electronic device according to the invention has the invention described in (12) The laminate has a different ρ and the gas layer 盥 leads the 岔 a θ 岔 ( (the adhesion between the conductor layers). Further, the conductor layer of the laminate of the present invention has high surface smoothness. According to the manufacturing method of the present invention, it is possible to form a high volume.千 千 千 千 千 千 千 千 千 千 千 千 千 千 千 千 千 千 千 千 千 千 千 千 千 千 千 千 千 千 千 千 千 千 千 千 千 千 千 千 千 千 千 千 千 千 千 千 千In addition, since an electronic device such as a w+ battery is used in a roll-to-roll method to form a large number of k-systems, it is possible to reduce the cost of 201034849. Since the structure for an electronic device of the present invention is formed of the laminate of the present invention and has excellent gas barrier properties and interlayer adhesion, it can be applied to an electronic device such as a display solar cell. [Embodiment] The following sub-items describe the present invention in detail by (1) a laminate, a method for producing the same, (2) a structure for an electronic device, and (3) an electronic device. (1) Laminate and method for producing the same The laminated system of the present invention has a laminate of a gas barrier layer and a conductor layer composed of a material containing at least an oxygen atom, a carbon atom and a ruthenium atom, and is characterized in that The surface of the gas barrier layer is oriented in the depth direction, and the ratio of the presence of the milk atoms in the gas barrier layer is gradually decreased, and the ratio of the presence of carbon atoms is gradually increased. Further, the force "the surface of the gas barrier layer" also includes an interface with another layer such as a conductor layer in the gas barrier layer (gas barrier layer). The gas barrier layer of the laminate of the present invention (hereinafter also referred to as "A layer" """,", "Eight-day" consists of a material having an oxygen atom, a carbon atom, and a helium atom. From the surface of the layer toward the depth direction, the ratio of oxygen atoms in the layer is: The proportion of atoms present is gradually increasing. To the villain ^ ^ ^ 3 materials with milk atoms, carbon atoms and broken atoms, if the limit of ': atoms, carbon atoms and cesium atoms of the polymer, shell has no special appearance / play more excellent gas barrier In the surface layer portion of the gas barrier layer, the total amount of the oxygen atom (the total amount of the atomic atoms of the oxygen atom, the total amount of the germanium atom and the germanium atom) is regarded as 201034849 100%. The ratio of the existence of the s atom is preferably ,, the ratio of the presence of the carbon atom is preferably 10 to 7 〇%. The ratio of the presence of 1 atom is preferably 5 _ _ = the ratio of the existence of the atom is preferably i 5 〜 (4), The proportion of carbon atoms present is 1655%. The proportion of ruthenium atoms is preferably from 10 to 30%. The ratio of the existence of the oxygen atom & atom and the stone atom was determined by the method described in the examples.

The ratio of the presence of oxygen atoms gradually decreases from the surface toward the depth direction, and the region where the ratio of the presence of the I atoms gradually increases is a thickness of the region corresponding to the gas barrier layer, which is usually 5 to 1 nm. ~5〇·. As such a gas barrier layer, for example, as will be described later, a layer obtained by injecting ions into a layer containing a polyorganosiloxane compound (hereinafter also referred to as a "injection layer") may be used, or a polyorganism may be included. The layer of the oxoxane compound is subjected to a plasma treatment to obtain a layer, and the gas barrier layer is in the XPS measurement of the surface layer portion of the gas barrier layer, and the 2ρ electronic domain of the ruthenium atom The peak position of the bond energy is preferably 102 to 104 eV. For example, the layer of 'polydimethyloxane' is 101.5 eV in the X-ray photoelectron spectroscopy (XPS) 相对 relative to the bond energy of the 2p electron domain of the ruthenium atom. In the ion implantation layer (gas barrier layer) obtained by ion implantation of argon in the layer, in the surface layer of the ray photoelectron spectroscopy, the peak position of the bond energy of the 2 p electron domain of the Shi Xi atom is about 1 03 eV. . This value is approximately the same as the large peak position of the bond energy of the 2p electron orbital of the ruthenium atom contained in the conventional gas barrier ruthenium-containing polymer such as glass or ruthenium dioxide film (X-ray photoelectron spectroscopy (xps) In the measurement of 9 201034849: the peak position of the bond energy of the sub-orbital domain, in the case of Boma, about 'in the case of 虱 虱 矽 约 约 about 103eV). Therefore, in the surface layer portion, the original layer of 9 + barrier Shield ~ ', the key position of the spoon 4 electronic rail has a peak position of 102 〇 4 eV of the layer of the invention, the film phase bucket W < laminate, due to It is estimated that the gas barrier performance is excellent with the structure of glass or cerium oxide = __. Further, the measurement of the peak position of the bond energy of the second orbital domain of Shi Xiyuan was carried out by the method exemplified in the examples. The gas barrier layer of the laminate of the present invention has a depth of 表面 π 表面 表面 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 Further, the vehicle is preferably 5 (10) to 100 nm, more preferably 3 〇 to 5 〇 (10). Further, the laminated system of the present invention has a gas barrier layer and a body, and the aforementioned gas barrier layered or t granules are laminated compounds. The surface of the layer has a layer obtained by the step (I) comprising a polyorgano-incorporated ion implanted in the polyorganosystem and a layered ion containing the (tetra)oxygen-based compound. The polyorganosiloxane-containing compound is easily used. A gas barrier layer is formed which is formed of at least an oxygen atom, a carbon atom, and a di-substrate, and which has a surface from the surface of the layer toward the depth direction, and has a gradually decreasing ratio of the existence ratio of the carbon atoms. ADDITIONAL STRUCTURE The structure of the polyorganooxygen chain used in the laminate of the present invention is not limited, and the main character of the s object is, for example, the former, the f-ji, the dragon, or the dragon. The linear main chain structure is described, and the structure shown can be constructed as a ladder-like main chain structure. For the following formula U) configuration 'as a main chain structure like Tiffany, exemplified Kb) FIG sense formula (c) worthy 201,034,849 made as shown.

S—ο

(8)

In the formula C, hydrazine, Ky, and fluorene each independently represent a non-hydrolysis of a hydrogen atom, an unsubstituted or substituted alkyl group, an unsubstituted or substituted alkenyl group, an unsubstituted or substituted aryl group, and the like. Further, Rx of the plural of the formula u), Ry of the plural of the formula (b) and Rz of the plural of the formula (c) may be the same or different, but the Rx of the above formula (a) is not two Is a hydrogen atom). 201034849 is an alkyl group of a substituted, substituted or substituted alkyl group, such as methyl 'ethyl, n-n-propyl, isopropyl, n-butyl, isobutyl, second butyl, second butyl A group having a carbon number of 1 to 10, such as a group, a n-pentyl group, an isopentyl group, a neopentyl group, a n-hexyl group, a group or an n-octyl group. Examples of the fluorenyl group include an alkenyl group having 2 to 1 Å carbon atoms such as a vinyl group, a propylene group, a 2-dimercapto-1-butenyl group, a 2-butenyl group or a 3-butenyl group. Examples of the substituent of the alkenyl group include a fluorine atom, a chlorine atom, a molybdenum atom, a thiol atom, a mercapto group, a thiol group, an epoxy group, a glycidoxy group, and a (meth) acetonium group. An oxy group; an unsubstituted or substituted aryl group such as a phenyl group or a 4-methyl group; As the aryl group of the unsubstituted or substituted aryl group, an aryl group having a carbon number of 6 to 1 G such as a decyl group, a 1-naphthyl group or a 2-naphthyl group. 'The substituent of the above-mentioned aryl group' may be a fluorine atom, a chlorine atom, a 9 atom or a ruthenium atom, etc. The carbon number of the methyl group, the ethyl group, etc. Alkoxy group having a carbon number of 1 to 6; nitro; #土歹基, thiol group; epoxy group; glycidoxydioxy group; phenyl group, 4-methyl group n. [Methyl) propylene And an aryl group such as a methyl group or a 4-fluorenylphenyl group, etc., a substituent or a group having an R of 1 ' RX, R" RZ each independently preferably an unsubstituted or a C ash It is preferably a methyl group, a ethyl group, a 3-glycidoxypropyl group or a phenyl group. The soil of the present invention, as a polyorganic formula (a) - λλ ± ± in the compound 'preferably the first (a) of the linear compound or the former (b) of the ladder-like compound 201034849 From the viewpoint of obtaining the barrier property and forming an injection layer having excellent gas barrier properties, it is particularly preferable to be a linear compound of two fluorenyl groups or a phenyl group in the above formula (a), and the above formula ( Two Ry-based ladder compounds of methyl, propyl, 3-glycidoxypropyl or phenyl. The polyorgano-oxygen compound can be obtained by a known production method in which a decane compound having a hydrolyzable functional group is polycondensed. The Shixiyuan compound used can be selected according to the purpose of the structure of the polyorganisms of the organic radix. Preferred examples thereof include dimethyl dimethoxy oxy shi xiyuan, dimercapto diethoxy oxysalicum, diethyl dimethoxy sec., and two f -7 ^ a 2-functional decane compound such as ethionyl decane; methoxy methoxy shi xiyuan, methyl triethoxy zephyr, ethyl trimethoxy sulfonate, ethyl triethoxy decane, n-propyl trimethoxy矽, n-butyltriethyl sulphate, 3-glycidoxypropyltrimethoxy sulphur, phenyltrimethoxydi:*yl-ethyllacyl decane, phenyldiethoxymethoxy矽 等 等 石 ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; Butanoxymorph, tetrazole-^, dimethyl-gas A-butadiene-based decane, methoxytriethoxy decane can be used to devise ethoxyl money, trimethoxy ethoxy money, etc. The agent and the secondary compound are commercially available as a release agent and are then commercially available. The mouth is used as it is. 31 organic oxane system, or a layer of the human right, except for polyorganisms. Further, it may be a hardener, another polymer, an anti-aging agent 13 201034849, a light stabilizer, a flame retardant, or the like, as an additional component which does not inhibit the object of the present invention. Further, it is preferable that the "inorganic compound containing a polyorganosiloxane compound has a polyorganophthalocene in the #% s", and the injection layer which is superior in gas barrier properties is preferably formed from the viewpoint of being excellent in formation. 50% by weight or more, f is up to, and particularly preferably 9% by weight or more. Is 7. The weight % or more is particularly limited as a method for forming a polyorganism-containing compound, and a method such as l ® does not include, for example, at least one compound containing a polyorgano p, a sulfonium-based compound, A method of forming other desired components and solvents, coating a suitable substrate, and heat of a solution for forming a ruthenium.钇 , , , , , 特别 特别 特别 特别 特别 特别 特别 特别 特别 特别 特别 特别 特别 特别 特别 特别 特别 特别 特别 特别 特别 特别 特别 特别 特别 特别 特别 特别 特别 特别 特别 特别 特别 特别 特别 特别 特别 特别 特别 特别 特别 特别 特别The best is 50nm to ΙΟΟμιη; the main intrusion layer is composed of polyorganismite ions. The amount of the implanted ions in the layer of the compound can be appropriately determined in accordance with the purpose of use (wei, phase, etc.) of the laminate having the necessary gas barrier properties. Examples of the ions to be implanted include &amp; rare gases; fluorocarbons, hydroquinones: cesium, krypton, xenon, krypton, etc., ionic oxygen such as sulfur, carbon dioxide, gas, fluorine, and gold, silver, Copper, palladium, deduction, ruthenium, 笙AA, #, palladium, chromium, titanium, molybdenum, - ion material electrical metal ion f. Among them, from the point of view of the injection layer which can be more easily injected and transparent, it is possible to obtain a gas barrier property and a group consisting of a fluorocarbon compound, a argon, a rare gas, and a milk emulsion. And the ions selected from the group to the small group of ^ 耵 夕 夕 种 特 特 , 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 The method of injecting ions is limited to a polyorganism-containing, and a temple, and the like, for example, in the layer of the open-organic oxane-based compound of the organic sulfonamide compound of the form '3, etc. . In the present invention, the method of accumulating the plasma in the plasma to accelerate the ions in the electric field (in the present invention, the method of 'sending from the simple one'), etc., in particular, Ο佳 佳 is the plasma ion implantation method of the latter. In fact, compared with the plasma ion implantation system, the plasma generated by the emulsion can be generated by the plasma generated in the gas-containing environment. The poly layer containing a negative high electric pulsed lactane compound is applied to the surface of the plasma containing the polyorgano compound (% ion). The enthalpy can be carried out by using x-ray photoelectrons. The spectroscopic (XPS) VIII <conductor layer> was confirmed by measurement analysis. The laminate of the present invention is more conductive. There is a conductor layer (hereinafter also referred to as "B layer" as a material constituting the B layer, and it can be mentioned as a material, a conductive compound, or a mixture of these: genus =, metal oxide oxidized tin oxide (AT0); For example, a raw metal emulsion such as zinc telluride (zinc telluride, indium oxide, oxidized surface tin π conductive metal negative ruthenium (such as & zinc di-n-indium telluride) can be added. , silver, chrome, and guide 枓 厘 厘 厘 # # # # # # # # 1 1 1 1 1 1 1 1 1 混合物 混合物 混合物 混合物 混合物 混合物 混合物 混合物 混合物 混合物 混合物 混合物 混合物 混合物 混合物 混合物 混合物 混合物 混合物 混合物 混合物 混合物 混合物 混合物 混合物 混合物 混合物 混合物 混合物The stomach 'poly" ^ (4), the organic conductive material 15 such as H, etc. 201034849 materials, etc. B, may be a layer formed by a plurality of layers formed by such materials, and the layer B may be It is transparent or opaque, and when the β layer is a bright one, a laminate having excellent transparency can be obtained. From the viewpoint of transparency, the material forming the b layer is preferably a conductive metal oxide, and particularly preferably η. Examples of the method for forming the layer B include a steaming forging method, a de-bonding method, an ion-money method, a thermal CVD method, a «method, and the like. In the case of forming the B layer in a simple manner, in the present invention, the plating method is preferably used. The plating method introduces a discharge gas (argon or the like) in a vacuum chamber, and the substrate and the substrate (in the present invention, A layer 曰 1% plus The discharge frequency is plasmad by the commercial frequency voltage or the direct current voltage, and the target material is splashed by the electric charge and the target material is splashed, and the film is attached to the substrate to obtain the film a. The left side is used as a target. The thickness of the layer of the layer can be suitably selected according to the description of the composition, etc., usually 10 (10) to 50 Å, preferably 2 〇 nm to 2 〇 _. The surface resistance of the obtained conductor layer The rate is usually 1 000 Ω / □ or less. For the formed conductor layer, Η - can also be patterned. As a method of patterning, chemical etching, such as lithography, etc.笤 A physical etching, etc., using a straight mask of the ray to the temple (Iift, two-coating or sputtering, detachment, printing, etc. 啷 (layered body) layer of the invention The product system has Yuma η, and there are people who say the layer and the layer, which can only be eight

The layer and the layer B are also composed of only A ^ . $ and then layer. Other layers may be layered, or may be of the same or different types of layers. Τ is early 201034849 As another layer, a base material layer, an inorganic compound layer, etc. are mentioned. The laminate of the present invention preferably contains a substrate layer from Μ@交. In view of the nature of the wood, the material constituting the base material layer is the same as the base material used in the formation of the layer containing the polymerized mouth material. When the laminate includes a base material layer, the barrier layer is provided with a ruthenium layer on the substrate, and since the surface layer is smoother than the surface layer of the base material layer to form the b layer, the b 〇 The smoothness of the surface of the B5 layer of the T5J. The laminate of the present invention may further contain an inorganic compound layer. No: the layer of the compound is composed of one or two of the inorganic compounds, and has a gas barrier property. The inorganic compound of the helmet of the layer can be generally made into a film and has a barrier to fall down! There are milky people such as cerium oxide, aluminum oxide, magnesium oxide, indium oxide, cerium oxide, oxidation, emulsification, Inorganic oxides such as titanium oxide, boron oxide, oxidized cerium oxide; inorganic nitrides such as nitrogen α _ ^ 'rats, IL, and magnesium; carbonized velvet; inorganic carbides such as ceram; inorganic sulfide Things, such complexes, etc. as a dream complex, Examples of the inorganic oxynitride, the inorganic oxidized carbide, the helmet, the carburetor, the inorganic oxycarbide carbide, and the like. Among the above, the ruthenium is an inorganic oxide. The inorganic nitride, the inorganic oxynitride, the inorganic nitrogen emulsified bismuth compound, and the inorganic oxynitride carbide are more preferably inorganic nitrides. The inorganic nitride may be a metal represented by the formula: MNy. In the formula, Μ represents a metal element, and the value of the range of y is · 1 to 1 · 3. 201034849 Among these, from the viewpoint of excellent transparency and the like, Μ is preferably Si Xi (Si), Aluminum (A1), bismuth (Ti), tin (Sn) nitride, M is more preferably yttrium nitride. Further, as the value of y, if Μ is Shi Xi (Sl), y = 〇i~i3 If it is aluminum (A1), π0.1~丨.1, if it is titanium (Ti), y=0.1~1.3 'If it is tin (Sn), then y = 0. 1~I 3 is preferable. The method for forming the compound layer is not particularly limited, and examples thereof include a vapor deposition method, a ruthenium plating method, an ion plating method, a thermal CVD method, and a radio frequency (10) method, and preferably an age plating method. More preferably, it is a magnetron sputtering method. The thickness of the inorganic compound layer is usually from 1 〇 nm to 1 〇〇〇 nm, preferably from 〜500 _ 'more preferably from 2 〇 to 1 〇〇 ηιη. The body is preferably a laminate of the above A layer and the bismuth direct layer. Here, "direct lamination" means that the surface side surimi layer of the enamel layer is directly laminated without passing through other layers. The laminated system in which the layer A and the layer B are directly layered is excellent in gas barrier properties and interlayer adhesion. Further, when the laminate of the present invention has an inorganic compound layer, the arrangement position of the probiotic compound layer is not particularly limited, and from the viewpoint of obtaining a laminate having excellent adhesion and gas barrier properties, it is preferred. It is located between the B floors. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 shows an example of a preferred constitution of a laminate of the present invention. However, the laminate of the present invention is not limited thereto. In Fig. 1, S denotes a substrate layer, and Al and A2 respectively sound. - Λ a indicates A layer, B1, knives indicate B layer 'C indicates inorganic compound layer. Fig. 1(4) shows a two-layer laminate formed by layer A-B, and Fig. 1 is not represented by substrate layer-A The layered body of the three layers formed by the layer-B layer, Table Kc) Table 18 201034849 The layered body of the four layers which is not formed by the layer of the layer of the base layer - the layer of the base layer - the layer of the layer of tantalum The layered body of the five layers formed by the gangrene layer of the base material layer, Figure Ue) shows the four-layered product of the base layer-Α layer-inorganic compound layer-β layer, which is represented by 1(1) A layered layer of a layer of a layer of a layer of an inorganic compound. The thickness of the layered body of the present invention is suitably determined without the use of an electronic device that is particularly conspicuous. The production method of the integrated body is not particularly limited. For example, a method of forming a layer of a layer on the layer may be formed by ",", ": Manufacturing A film-like laminate of the strip is preferred. For example, a layered system in which the tantalum layer is a gas barrier layer obtained from a layer containing a flat organic compound of the earth is prepared as follows. First, the layer containing the polyorgano-oxygen compound in the long-length base film as the base material layer, for example, transporting the long-length base film in the direction of the material, the material is A coating device comprising a polyorganic two: phase-coated surface, an optional other component and a solvent; at least - formed by using a knife coating concave =:, etc. as a coating device It can be: a well-known device such as a machine, a gravure roll coater, etc. The second polymer layer is implanted with the above-mentioned plasma ion implantation. The water engraving is applied to the left side of the drawing, and the outline of the sub-injection device is shown. The continuous plasma of the device is separated from the 19 201034849. In Figure 2(a), the Ua system, the 2〇a series turbomolecular pump, the tanning system sends out the film before the ion injection, and the 5a system will pass through The ion-implanted laminated film ib is wound into a parent-shaped take-up roll, and the 2a is a high-voltage application rotary can (can ) '10a gas inlet, 7 series high-voltage pulsed power supply, 4 series electrode for plasma discharge (external electric field). Circle 2 (b) is a squint circle of the high-power Weijia rotary can 2a, high voltage introduction Terminal (feedthrough). ...闯4 corpse/]·No continuous power ^ 1 矸朕ia is kept in the mountain, and is carried by the take-up roll 3a to the arrow in Fig. 2, and the rotating can 2a is applied by high voltage. The rubber is replaced by the right winding c on the take-up roller 53. The winding method of the film ia or the method of transporting the film la is not particularly limited, and there is a special limitation in the form, in the form, by祙 估 于 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本Further, the rotation of the rotating can 2a is applied from the two ^ ^ pressures, and the central axis 13 of the high-electric feeder terminal 15 is rotated by the motor to perform the transfer. &quot;Two:? The terminal 15 and the thin terminal are connected to the plurality of contacts for the feeding of the insulator. For example, the surface of the oxidized material is formed by coating the resin of the polytetrafluoroethylene 4. Further, the voltage of the ancient human is applied to the Korean wire 9. For example, the transfer can 2a is formed of stainless steel or the like. The transfer speed of the film is suitable for the transfer of the film la to the winding by the take-up roll 3a. The time between the injection layer of the film 13 and the implantation of the film 13 is not as long as it can ensure the formation of the desired ion linear velocity. The winding speed of the film lb (2 is preferably 2. 2~〇7一. ...(M~ 百先' is connected by the rotating nr knife to the pump 2〇a, the chamber Ua 201034849 is exhausted, minus The pressure is usually lxl〇-4Pa~1Pa, preferably lxl (T3Pa~lxl (T2Pa. Next, a gas for ion implantation is introduced into the chamber Ua via the gas introduction port 1〇a (hereinafter also referred to as " The gas for ion introduction ") is used to make the inside of the chamber lu a gas environment for decompressed ion implantation. The gas for ion implantation is also a plasma generating gas. Next, the plasma discharge electrode 4 (external electric field) is used to generate plasma Ο. As a method for generating plasma, microwave or RF may be used. A well-known method such as a high-frequency power source, etc. The surface and the cymbal are introduced into the terminal Ϊ5 by the same voltage, and the high-voltage gyro-g is connected to the high-voltage side of the gyrotron 2a. If the material is &amp; Adding a negative high-voltage pulse to generate electricity in the cluster; the canister 2 "also adds a negative high-voltage house pulse, then the surface of the induced (4), the main inlet _ applies the surface of the film around the rotating can 2a (Figure 2 ( a) Medium arrow γ). The laminated film lb of the human layer is transferred to the second V which forms a layer on the substrate layer, and the laminated film _ A layer (formed with ion implantation by sputtering) Form B. The B layer can be formed, for example, by using a sputtering device as shown in Fig. 3 in Fig. 3. In the continuous sputtering device of eight pounds, the molecular fruit, 3b hiccup + is a Ub room of 1 , 20b series turbine na 糸k out laminated film 1 b of the torn tread layer thin layer _ le M h W heart '5b system will be formed into a roll of roll , βκ〆 oxygen source introduction port. Roller 6b is a roller for delivery, 1〇b 2b is a rotating can, 8 layers of thin 膣! Κ ^ T difficult to plate loose target. To hi ο ' imitation, by making the rotating can 2b In the rotation of Fig. 3, the arrow Y+% turns, and is conveyed by the winding roller in the direction of breaking, and winding b 21 201034849 - firstly, in the same manner as the electric ion ion implantation device shown in Fig. 2, a film is placed in Ub. 1b' to form the B layer on the A layer, and exhaust the chamber llb by the turbol genus 9nk connected to the rotary pump. In this case, the gas is guided by 〇 〒 在 in the lib, for example, while introducing iL and oxygen, the plasmon is applied to the target to apply the directional electric power to discharge the plasma. In this case, the argon and oxygen H pushes into the ionization and collides with the target. The ruthenium 构成 构成 构成 构成 ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ 溅射 溅射 溅射 溅射 溅射 溅射 溅射 溅射 溅射 溅射 溅射 溅射 溅射 溅射 溅射 溅射 溅射 溅射 溅射 溅射 溅射 溅射 溅射 溅射 溅射 溅射 溅射As described above, a laminated film lc (layered body of the present invention) in which μ is formed on the layer A of the laminated thin layer lb can be obtained. A layered body having an inorganic compound layer on the layer A and having a layer b on the layer A can be formed by layer A of the laminated film η which is served by the above-mentioned same medium/upper river sample. On the surface of the ion-implanted layer, for example, after forming an inorganic compound layer using a magnetron-exchanging device, a B layer is formed on the formed inorganic compound layer in the same manner as described above. In this case, when the laminated film lb is also elongated, the four-layer film lb can be transferred in a certain/direction, and the inorganic compound layer is continuously formed by using magnetron sputtering I, and then - A laminated film with an inorganic compound layer is conveyed in a predetermined direction, and a B layer is continuously formed on the surface of the inorganic compound layer in the same manner as described above. According to the method for producing a layer member of the present invention, the laminate of (1) to (7) can be easily produced. The laminate body of the present invention obtained as above has excellent gas barrier properties and adhesion. The laminate of the present invention has excellent gas barrier properties, and this can be confirmed by a small transmittance of a gas such as water vapor in the laminate of the invention of 2010. The water vapor transmission rate of the laminate of the present invention is preferably 1. 〇g/W.day or less, more preferably 〇. 6g/(m2 · day) or less, particularly preferably 〇. Ig/On2. day) the following. The transmittance of water vapor or the like of the laminate can be measured using a well-known gas permeability measuring device. The layered system of the present invention is excellent in adhesion between layers, and for example, it can be adhered according to JIS - Η 8 5 4 4, which is an adhesive tape, which is a tape transfer, and a (4) old test, which is evaluated as ❹ 良好 good. confirm. The conductor layer of the laminate of the present invention is excellent in surface smoothness. The surface roughness (Ra) of the conductor layer of the laminate of the present invention is usually 2, preferably I' or less, and more preferably 〇 5 nm or less. The surface roughness of the conductor layer can be measured using an atomic force microscope (then). (2) Structure for electronic device and electronic device. The structure for an electronic device of the invention is characterized by the layered body of the present invention. Therefore, the structure for the electronic device of the present invention has conductivity, gas barrier property and interlayer adhesion. 'It is ribbed, and it can be used as a member of a liquid crystal display, a dedicated display, or a solar cell, etc., for example, an electronic device including an electrode substrate system includes the present invention. The structure of the electronic device. It has a liquid crystal display, an organic EL display, an inorganic germanium display, a paper, a solar cell, and the like. The electric electronic device 'has excellent gas barrier properties because it includes a structure for an electronic device formed by the laminate of the present invention. [Examples] Hereinafter, the present invention will be described in more detail by way of examples, but the present invention is not limited by the following examples. Plasma ion implantation apparatus, X-ray photoelectron spectroscopy apparatus (XPS), measurement conditions, measurement method of surface roughness (Ra) of a conductor layer, and water vapor transmission rate for measuring water vapor transmission rate of a molded object The apparatus, the measurement conditions, the apparatus for measuring the surface resistivity of the conductor layer, the visible light transmittance measuring apparatus, and the method of the adhesion test are as follows. Still, the plasma ion implantation apparatus used is an apparatus for performing ion implantation using an external electric field. (plasma ion implantation device) RF power supply: model "RF56000", high voltage pulse power supply manufactured by JEOL Ltd.: "PV-3-HSHV-0835", manufactured by Kurida Co., Ltd. (X-ray photoelectron spectroscopy device) Measuring device: " PHI Quantera SXM" Ulvac-Phi company X-ray beam diameter: 1 〇〇 μιη Power value: 25W Voltage: 15 Κ ν Take-out angle: 45. The measurement described below was carried out under the measurement conditions. The ratio of the presence of oxygen atoms, carbon atoms, and lithium atoms, and the peak position of the bond energy of the electron domains of the ruthenium atom were measured. The plasma ion implantation surface of the molded body obtained in Example 15 was compared with 201034849: column 1 The oxygen atom on the surface of the polydimethylsiloxane-containing layer of the formed body, the ratio of the presence of the carbon atom to the cleavage atom, and the peak position of the bond energy of the 2p electron domain of the fragmented atom. Then, for the respective molded bodies, the surface of the plasma ion implantation surface (Example (5), the surface of the layer containing polydimethyl oxalate (Comparative Example 1) was oriented in the depth direction, and argon gas was used for ruthenium plating. The operation of repeating the ratio of the presence of the surface exposed by the sputtering is measured to determine the ratio of the presence of atoms in the depth direction and the two-peak position of the 2p electronic domain of the Shixia atom.

In the above measurement, the applied voltage of the argon sputtering is Mb,! The secondary deactivation time was 12 seconds, and the (10) rate was 1 〇〇nm/min in Example 6, Example u 15 and Comparative Example 1, in the examples? 8 is a minute, and in Example 9, 1 〇 is 3 〇 nm / min. (Measurement of Surface Roughness of Conductor Layer) The surface roughness of the conductor layer was measured using an atomic force microscope (AFM) ("spA3〇〇HV" manufactured by SII Nanotechnology Co., Ltd.). (Adhesion test) Perform a peeling and cross cutting to complete a 1 mm 2 mm adhesion test in accordance with JIS-H8504 adhesive tape cutting test. In the test system, a square of the slit was introduced into the layer B in advance, and the shape of the layer B was visually observed and evaluated in six levels. The evaluation is based on the classification of the K56 () () _5-6 (Table) test results (measurement of water vapor transmission rate). The water permeability is based on the transmittance tester ("L80-5_" manufactured by Lyssy). 'Measurement under the conditions of relative humidity 9 ()%, 4 () t 25 201034849. (Measurement of surface resistivity of conductor layer) 1:1 Surface resistivity of bulk layer using surface resistivity measuring device (1) (Loresta GP) made by Ryoko Koji. (Measurement of visible light transmittance) Visible light transmittance (full light penetration, sundial - Zhuangban, no setting, thousand M糸 using visible light transmittance to measure clothing (曰本电色工业工制J ^ Hazemeter NDH2000") to measure 疋. Furthermore, the shaped body (4) is treated as::=::, in the embodiment 1~ having a layer containing polydimethyl siloxane The formed body is made of (polyethylene terephthalate) PETS8T ^on ± _ ethyl ester film ("PET38T-300", manufactured by Toray Industries, Inc.).

On the film J), the use of Meiya corpse 38_) (hereinafter referred to as "the PET material with poly-methyl, the upper cloth as a polyorgano oxy-oxygenated compound with polymethyl methoxide as the main stone" The oxygen stripping agent "KS835 j is used as a gas resin (1) (poly heating for 2 minutes to form a thickness (10) (10) to obtain a molded product. Next, a layer of the::::::::: The electro-polyion implantation apparatus of the present invention produces a surface of the layer of the formed body i, and ions are implanted into the plasma to indicate the conditions of plasma ion implantation. • Plasma generated gas: N2 • Duty ratio: 0.5% • Repeat frequency: l〇〇〇Hz 26 201034849

• Applied voltage: -1 OkV .RF power supply: Frequency 13.56MHz, plus power 1〇〇 (4) • Indoor pressure: 0. 2Pa • Pulse width: 5μ sec. Processing time (ion injection time): 5 minutes • Transfer speed: 0.4 m/min—Secondly, an IT〇m having a thickness of 50 nm as a conductor layer is formed by magnetron sputtering on the ion-implanted polyorganosiloxane-based layer of the formed body 1 A layered body 1 having a layer structure of a base material layer (PET film) H (a polyorganosiloxane containing a gas ion-implanted layer) and a layer B film (10) was produced. The conditions for sputtering are shown below. • Plasma generated gas: argon, oxygen, gas flow: argon l00sccm, oxygen 5sccin • Power value: 1 500W 室内 • Indoor pressure: 0. 2Pa • Line speed: 0. 2m/min • Sputter target: IT〇 ( Example 2) A molded article 2 was produced in the same manner as in Example 1 except that argon (Ar) was used as the plasma generating gas.

Then, in the same manner as in Example 1, an IT0 film having a thickness of 5 〇 nm as a conductor layer was formed on the ion-implanted organic oxy-oxygen compound layer of the formed body 2 by magnetron sputtering. To make a substrate layer (PET 27 201034849

A layer 2 composed of a layer of a gas system compound layer)-B film)-A layer (a polyorganism layer of a polyorganismite layered with argon ions). (Example 3) A molded article 3 was produced in the same manner except that helium (He) was used as the plasma generating gas. Example 1 Next, in the same manner as in Example 1, on the layer of the ion-implanted compound of the molded body 3, the shoe was made by magnetron sputtering. , forming a thickness of 5 〇ηιη as a conductor layer

... . a ^ , 乂 a layer composed of a layer of a substrate layer (PET ruthenium film)-A layer (a layer of a κ-negative decane-based compound which is implanted by argon ion implantation) _b layer (ΙΤ0 film) Integral 3. (Example 4) A molded article 4 was produced in the same manner as in Example 1 except that oxygen (?2) was used as a plasma-generating body. Next, in the same manner as in the first embodiment, J π ^ is formed on the ion-implanted polyorganosiloxane compound layer of the formed body 4, and the thickness of the conductor layer is formed by the magnetron control method. The film was formed into a laminate 4 having a layer of a substrate layer (linking film)-A layer (a group of oxygen-incorporated (tetra)oxygen, compound layer)-β layer (I TO film). (Example 5) On the same pET film as that used in Example 1, a UH bar was coated with a polyorganosiloxane having a structure in which a part of a methyl group having polydimethyl methoxy alkane was substituted with benzene. The compound is a main component of polyoxynium tree (B) (trade name "X62-920 1 B", manufactured by Shin-Etsu Chemical Co., Ltd.), and has a benzene at a thickness of 100 nm at 12 rc...2 knives. A layer of a polyorganophthalocyanine 28 201034849 alkane was obtained to obtain a molded product. Then, 'on the surface of the layer containing the polyoxyxylene resin (B), 'the same as in the first embodiment' was plasma ion-implanted with nitrogen to obtain a molded article. Next, in the same manner as in the first embodiment, on the ion-implanted polyorganosiloxane compound layer of the molded body 5, by magnetron sputtering, an IT0 having a thickness of 50 nm as a conductor layer was formed. 'Layer 5 made of a layer having a base layer (pET film)-A layer (a polyorganosiloxane containing compound layer implanted with nitrogen ions) layer (ΙΤ0 film). 〇 (Example 6) A molded body 6 was produced in the same manner as in Example 5 except that argon (Ar) was used as the plasma generating gas. In the same manner as in the first embodiment, an IT0 film having a thickness of 50 nm as a conductor layer was formed on the ion-implanted polyorganosiloxane compound layer on the ion-implanted polyorganosiloxane compound layer of the molded body 6 to prepare a base. A layer (pet film)-A layer (polyorganic ion-implanted polyorganic; ε oxime compound layer)-b ◎ layer (ΙΤ0 film) layered laminate 6. (Example 7) Mix 3 29 g (20 mmol) of n-propyltrimethoxy decane (manufactured by Tokyo Chemical Industry Co., Ltd.), 4.73 g (20 mmol) of 3-glycidoxypropyltrimethoxydecane (manufactured by Tokyo Chemical Industry Co., Ltd.), 20 ml of toluene, distilled water of i〇mi, and 0.1 g of (lmmol) phosphoric acid (manufactured by Kanto Chemical Co., Ltd.), and the reaction was allowed to proceed for 24 hours at room temperature. After the reaction was completed, a saturated aqueous solution of sodium hydrogencarbonate was added to the reaction mixture. 1 〇〇ml of ethyl acetate was added thereto, and liquid separation was carried out to obtain an organic layer. The organic layer was washed twice with distilled water, and then dried with anhydrous sulfur 29 201034849 _ to separate the sulfuric acid town. Drop to the big =: burned to make the temple. By decanting N-hexyl appearance after leaving the sink was years Los solution in tetrahydrofuran (THF),

~ 仃 收 收 收 收 收 收 收 收 收 收 的 的 的 的 的 的 的 的 的 的 的 的 的 的 的 的 的 的 的 的 的 的 的 的 的 的 的 的 的 的 的 的 的 的 的 的 的 的 的 的 的 的 的 的 的 的 的 的 的 的 的 的 的 的 的 的 的 的 的 的 的 的 的 的 的 的 的 的 的 的 的 的). This material has a weight average molecular weight of 2, 〇〇〇. Next, the obtained poly-half-stone oxidized solution was dissolved in a scorpion, and the obtained solution (solid content concentration: 2% by mass) was applied onto the same ruthenium film as that used in Example 1 using a Meyer rod. Heating at 125 t for 6 hours to harden 'to obtain a shaped article having a layer of polyoxo oxide having a thickness of 1 QGnm. On the surface of the layer of the double-cut oxygen-fired layer after the hardening, the plasma ionization device was used. In the same manner as in the example i, the plasma was ion-implanted with nitrogen to form the body 7. Further, the weight average molecular weight is a value in terms of polystyrene measured by gel permeation chromatography. Further, the water vapor transmission rate of the molded article before plasma ion implantation was 12.1 (g/(m2.day)), and the total light was transmitted through 89.10%. Then, in the same manner as in Example 1, the ion in the molded body 7 was passed. The injected polyorgano-oxygen compound layer 1 is formed by a magnetron sputtering method to form an ITG film having a thickness of 5 (11111) as a conductor layer to form a film having a substrate layer (10)-A layer. A layered body 7 composed of a layer of a nitrogen-implanted polyorganosiloxane compound-B layer (IT0 film). (Example 8) Example 7 was used except that argon (Ar) was used as the plasma generating gas. Similarly, the molded body 8 was produced. 30 201034849 Next, in the same manner as in the first embodiment, 'on the ion-implanted polyorgano-oxygen compound layer of the molded body 8', a magnetically controlled sputtering method was used to form a conductive layer. A film of a thickness of 50 nm in the bulk layer is formed to form a laminate of a layer having a base layer (ρΕτ film)-Α layer (a polyorganosiloxane containing compound layer of argon ion implantation)_β layer (I TO film). 8. (Example 9) 〇〇 mixed with 7.94 g of UOnrnol) phenyl trimethoxy decane (Tokyo Chemicals Co., Ltd.) Corporation), 20ml of toluene, and distilled water i〇mi g (lmmol) phosphoric acid (Kanto Chemical Co., Ltd.), so at room temperature for 24 hours. After completion of the reaction, a saturated aqueous solution of sodium hydrogencarbonate was added to the mixture, and ethyl acetate (100 ml) was added to the mixture, and the organic layer was separated. After washing the organic layer twice with steamed water, it was dried with anhydrous sulfuric acid, and magnesium sulfate was separated by filtration. The resulting filtrate was dropped into a large amount of n-hexane to make it sink. After the separation was completed by decantation, the precipitate was dissolved in THF and recovered. The thf was distilled off under reduced pressure by an evaporator, and vacuum-dried was carried out to obtain a polyepitazepine (polyorgano-oxygen: compound) having a ladder-like structure. This material had a weight average molecular weight of 16 Å. Next, using the Meiya rod, the obtained solution of the polyp-semiconductor 6 'sampling/recombining in the sputum (solid content concentration: 2% by mass) was applied to the sinus sinus. On the PET film, 'at 12 5 C plus 6 small iv ... b] is known to harden, and a layer of polytetramethylene oxide having a thickness of 1 〇〇 nm is obtained. After hardening The surface of the layer of polysilsesquioxane was separated from the left-input device by using a plasma. In the same manner as in Example 1, the plasma was ion-implanted with nitrogen, and the formed body 9 was made from the top. Further, before plasma ion implantation 05%。 The formation of the water 蒗 蒗 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、

Then, in the same manner as in the first embodiment, a 〇0 film having a thickness of 5 〇 is formed as a conductor layer on the ion-implanted polyorganosiloxane compound layer of the molded body 9 by a magnetron sputtering method. A laminate 9 having a layer of a base layer (pET film)-A layer (a polyorganosiloxane containing compound layer of nitrogen ion implantation) _b layer (I TO film) was produced. (Example 10) A molded article 1 was produced in the same manner as in Example 9 except that argon (Ar) was used as the plasma generating gas.

Then, in the same manner as in the example 1, a 〇0 film having a thickness of 5 〇 nm as a conductor layer was formed on the ion-implanted I-organo-oxygen compound layer of the formed body 10 by magnetron sputtering. A laminate having a layer of a base layer (pET thin layer)-A layer (polyorganosiloxane containing compound layer of argon ion implantation)_b layer (ITO film) was produced. (Example 1 1 ) On a polyethylene terephthalate film ("PET38T 300", thickness 38/zm) (hereinafter referred to as "pET film") manufactured by Mitsubishi Plastics Co., Ltd. The alkane-based compound (a polyoxyxylene resin having a polydimethyl methoxy oxane as a main component, "KS835") manufactured by Shin-Etsu Chemical Co., Ltd., has a coating film of 120. . A layer of polydidecyloxyne having a thickness of 100 nrn (hereinafter referred to as "polyorganosiloxane compound layer") was formed on the pET film by adding #2 minutes. Next, ammonia was ion-implanted on the surface of the polyorgano-oxygen compound layer using an electro-polyion implantation apparatus. The conditions for ion implantation are shown below. 32 201034849 • Plasma generated gas: argon • Duty ratio: 1%

• Repeat frequency: 1 00 0Hz • Applied voltage ···l〇kV RF power supply · Frequency ΐ3· 56MHz, plus power 1 • • Indoor pressure: 0. 2Pa • Pulse width: 5 μ sec • Processing time: 5 Minutes, speed, and 0.2 m / min. Next, on the ion-implanted polyorganosiloxane compound layer, in the same manner as in the case of the example 1, the thickness of the conductor layer was formed by the magnetron sputtering method. Membrane, the layer of your layer is composed of a substrate layer (PET film) _α layer (poly-organic shim ρ prepared by rat ion implantation) Β layer (ΙΤ0 film) layer composition The layered body 11 is. The conditions for sputtering are shown below. ❹ • Plasma generated gas: argon, oxygen, gas flow; argon lOOsccm, oxygen 5sccm • power value; 1500W • Indoor pressure: 0. 2Pa • Line speed: 0. 2m/min • Sputter target: IT0 (Example 12) The plasma generating gas 11 used for the same was prepared in the same manner as in Example 11, except that the ion implantation was changed from argon gas to nitrogen gas, and Example 33 201034849 material layer (PET film)-A layer (via A layered body 12 composed of a layer of a nitrogen-ion-implanted polyorganosiloxane derivative layer)-B layer (ΙΤ0 film). In the same manner as in Example ,, the organic layer of the laminate 11 produced in Example 11 was thinly formed on the surface side of the non-polyorganosiloxane compound layer. A siloxane-based compound layer is ion-implanted to the polyorganosiloxane-based person to produce an A layer (polyorganofluorene 2 bis compound layer argon ion-implanted)-substrate layer (PET film)_A Layer (layer of argon ion-implanted = organooxane-based compound layer) - layer of layer B (1 ruthenium film), j 2 \ &lt; arm assembly (Example 14) Except in Example 11, The sputtering target was aluminum, and the plasma generation gas in the sputtering was argon (100 sccm), and the same operation as in Example u was performed, instead of the ITO film, to form an aluminum film having a thickness of 50 nm to prepare a substrate layer (PET). A laminate 14 composed of a layer of a film A layer (a layer of a polyorganic oxide system ion-implanted with an argon plasma ion) and a layer B (aluminum film). (Example 1 5) A polyorganosiloxane compound layer was formed on a PET film in the same manner as in Example 11, and argon was ion-implanted. On the ion-implanted polyorganosiloxane compound layer, a tantalum nitride film having a thickness of 50 nm as an inorganic compound layer was formed by magnetron sputtering. The conditions for sputtering are shown below. • Plasma generated gas: argon, nitrogen • Gas flow: argon lOOsccm, nitrogen 60sccm

• Power value: 2500W 34 201034849 • Indoor pressure: 0. 2Pa • Line speed: 0. 2m/mi η • Sputtered dry: S i Next, on the surface of the formed nitride film, the same as in the eleventh embodiment To form a 1 忉 layer having a thickness of 50 nm by magnetron sputtering to form a substrate layer (PET film)-A layer (polyorganic oxy-oxygen layer by argon ion implantation)-inorganic compound layer-B A laminate 15 composed of a layer of a layer (ITO film). (Comparative Example 1) 形成 A shaped body was produced in the same manner as in Example Ο except that ion implantation was not performed. That is, a layer containing polydiindenyl alkane is formed on the PET film to form a molded body 16. A 50 nm-thick ΙΤ0 film was formed as a conductive layer by a magnetron sputtering method to fabricate a substrate layer (a PET film containing a layer-B layer (I T0 film) of a polydimethyl sulfoxide compound). The layered body 16 was laminated. (Comparative Example 2) On the PET film used in Example 11, a film of 50 mm thick as a conductor layer was formed by magnetron sputtering to prepare a substrate. Layer (PET film) - layered body π composed of layers of layer B (I TO film). The conditions of sputtering were the same as in Example 11. (Comparative Example 3) In addition to Example 11, on PET film The same procedure as in Example 11 was carried out except that a polyorganismite compound layer was not formed, and a nitride film having a thickness of 5 〇 nm was formed by magnetron sputtering to prepare a substrate (PET film). A layered body 18 composed of a layer of an inorganic compound layer (yttrium nitride film)-B layer (IT0 film). The sputtering conditions in the formation of a tantalum nitride film are shown below. 35 201034849 • Plasma generating gas: argon, nitrogen • Gas flow rate: argon 1 OOsccm 'nitrogen 60sccm • Power value: 25〇〇f • Indoor pressure: 〇. 2pa • Line speed, Q. 2m/mi π • Splashing clock dry: S i Fig. 4 to 14 + shows the oxygen atom carbon atom and germanium atom determined by elemental analysis of XPS of the molded article 1 to 1 of the example and the comparative example In the case of ～14, the vertical axis represents the existence ratio of atoms when the total amount of oxygen atoms, carbon atoms, and helium atoms # is (10), and the horizontal axis represents the cumulative time of (four) cumulative time (sputterTime, minutes). Since the velocity of the ore deposit is fixed, the cumulative time of sputtering is corresponding to the depth. Figure 4: The ratio of the presence of 'a carbon atoms' in 'B' is the ratio of the existence of oxygen atoms' c dream As shown in Fig. 4 to Fig. 3, the surface is oriented in the depth direction, and the existence ratio of the sub-section is gradually increased by 14 as shown in Comparative Example J. 'In the molded body 1 to 1〇, it is confirmed that The ratio of the presence of oxygen atoms is gradually reduced, and the area of the carbon atoms (gas barrier layer). On the other hand, in the molded body 1 as shown in the figure, the above-mentioned region is not β, but it is in the form of 'a ^ 7| ^ 1 i 〜1. ψ ,; Same as the molded body 1 to 1 0, 'definitely &lt; From the surface toward the depth direction, the existence ratio of the atoms gradually decreases, and the domain in which the proportion of anatomical atoms gradually increases (gas barrier layer) exists. 36 201034849 The molded bodies of Examples 1 to 1 are not shown in Table 1. a gas barrier layer (a region in which the presence of oxygen atoms in the layer gradually decreases from the surface toward the depth direction, and the proportion of carbon atoms gradually increases), the proportion of oxygen atoms, carbon atoms, and germanium atoms in the surface layer portion, and germanium atoms The result of the peak position of the bond amount of the 2ρ electronic domain.

Further, the surface of the gas barrier layer of the molded body of the molded article of Example 1 to 1 is subjected to the plasma ion implantation surface, and the surface of the plasma ion implanted surface is measured by the above method, and the oxygen atom of the surface layer of the gas barrier layer is The ratio of the existence of carbon atoms and helium atoms, and the peak position of the bond amount of the two electrons of the helium atom. Further, the ratio of the atomic existence is a value obtained by measuring the total area of the peaks of the obtained oxygen atom, the sulfonium atom, and the cerium atom of the cerium atom.

[Table 1]

37 201034849 According to Table 1, the peak position of the bond energy of the 2p electron domain of the germanium atom on the surface of the gas barrier layer of the molded bodies 1 to 10 is 1〇29eV to l〇33eV. Further, Fig. 15 shows the results of measuring the bond energy of the 2p electron domain of the Shixia atom by the xps analysis of the molded body 2 produced in the second embodiment. In Fig. 15, the vertical axis represents the peak intensity and the horizontal axis represents the bond energy (eV). According to Fig. 15, the peak position of the bond energy (B) of the 2p electron domain of the germanium atom of the molded body 2 is 103·3 eV. The peak position of the bond energy of the 2p electron region of the bismuth atom of the molded body 2 is 1〇1.5" before the ion implantation, and the strain is shifted to 丨〇3. 3eV after the ion implantation. Next, the laminates 1 to 18 obtained in Examples 1 to 15 and Comparative Examples 丨 to 3 were measured for surface roughness Ra (nm), water vapor transmission rate, surface resistivity, and visible light transmittance. The adhesion test was carried out. The measurement results and evaluation results are shown in Table 2. [Table 2] Laminated body Ra (nm) Water vapor transmission rate [g/(mz*day)] Surface resistivity · (Ω/ Π) __Example 1 1 1 0.31 0.08 83.5 Example 2 ------ 2 0.28 0.06 82.8 Example 3 3 0. 33 0.51 81.4 One Example 4 4 0.25 0.09 82.1 5 5 0.41 0.28 81.1 Column 6 6 0.38 0.21 83.2 _^Example 7 7 0.29 0.12 83.4 __^ Example 8 8 0.31 &lt; 0. 01 83.2 Example 9 9 0.42 &lt; 0.01 81.1 Adhesion test (good 0 to 5 difference) 38 201034849 81.5 78.2 0 82.7 75.0 0 83.5 74.6 0 83.7 68.9 0 5. 5 0 0 84.0 82.0 1 85.2 82.7 0 75.0 80.4 0 A _ 84.3 78.1 0 _

❹ 〇 L ^ 1 , N, called the limit [0.01gAm, day) j. According to Table 1, the laminated system of Examples 1 to 1 ^s n 5 is excellent in gas barrier properties (the value of the water vapor transmission rate is small), and it is excellent in the release of the moon (except for the laminate 14). Further, in the first to fifth embodiments, the layer of the electric layer is smooth, and the electric conductivity is excellent, and the electroconductivity is also excellent - a simple structure of the laminated structure of the laminate. Plasma ion implantation apparatus used in the drawings Fig. 1 (a) to (f) show the present invention. Fig. 2 (a) and (b) are views showing a schematic configuration of the present invention. Fig. 1 is a schematic view showing a schematic diagram of a sputtering apparatus used in the drawing of the present invention. "The ratio (%) of oxygen atomic carbon atoms and germanium atoms in the gas barrier layer of the molded body i of the example i is shown. Fig. 5 is a view showing the ratio (%) of the oxygen atomic carbon atoms and the cerium atoms in the gas barrier layer of the molded article 2 of Example 2. Fig. 6 is a view showing the formation of the molded body 3 of Example 3. Fig. 7 is a graph showing the ratio of the presence of oxygen atoms 'carbon atoms and germanium atoms in the gas barrier layer of the molded body 4 of Example 4 in the gas layer. Fig. 8 is a view showing the ratio (%) of the gas barrier layer H 1 milk atom, the carboniferous atom and the ruthenium atom of the molded article 5 of the fifth embodiment. Fig. 9 shows the formation of the embodiment 6. A graph showing the ratio (%) of oxygen atoms, carbon atoms, and ruthenium atoms in the gas barrier layer of the body 6. Fig. 1 shows that the oxygen atom of the molded body 7 of the seventh embodiment has an oxygen atom Fig. 11 is a view showing the oxygen generation in the gas barrier layer of the molded body 8 of Example 8. Fig. 12 is a view showing the ratio (%) of the atomic atoms of the oxygen atom and the presence of the cerium atom in the gas barrier layer of the molded article 9 of the ninth embodiment. Fig. 13 is a view showing the ratio (%) of oxygen atoms, carbon atoms, and germanium atoms in the gas barrier layer of the molded article of Example i. Fig. 14 is a view showing a molded body of Comparative Example i. The gas barrier j, 2: Hawthorn 7 W Τ ΐ 之 之 图 图 图 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 Diagram of bond energy distribution of 2p electronic rail domain [Description of main component symbols] 1 Film-like laminate 2a, 2b Rotating tanks 3a, 3b rolled out of Yukun 40 201034849 4 Electrode discharge electrodes 5 a, 5 b Pro 6a, 6b send roller 7 pulse power supply 8 standard dry 9 Nandian Fort 10a, 10b gas inlet 11a, lib room

41

Claims (1)

201034849 Qi Shenming Patent Range: I-layered laminate having a gas barrier layer and a conductor layer composed of a material containing at least an oxygen source +, a broken atom and a stone atom, characterized in that: &amp; The surface is oriented in the depth direction, the proportion of oxygen atoms in the gas barrier layer is gradually reduced, and the proportion of carbon atoms is gradually increased. For example, the layered body of the i-th aspect of the patent scope is included in the gas barrier. In the surface layer, the amount of oxygen atoms, carbon atoms, and Shixia atoms is present. The ratio of the presence of oxygen atoms is 1q to 7q%, and the presence of carbon atoms 歹·'·, 10~70% '矽 atoms The ratio of existence is 5 to 35%. Please patent scope! a layered body in which the aforementioned gas barrier layer is in the surface of the gas barrier layer of the Ο 邱 γ γ γ γ γ γ γ γ γ γ γ γ 测定 测定 测定 测定 测定 测定 测定 测定 测定 测定 测定 测定 测定 石 石 石 石 石 石 石 石 石 石 石Department 1〇2~ 4. Apply for patent scope! The layer of the compound layer. A, more inorganic. 5. For example, the scope of patent application! The layered body of the term is composed of a polyorganic helium gas ρ /, and a gas barrier layer. In the layer of the compound of the oxygen-oxygen system, the layer is implanted with ions. The laminate of the fifth aspect of the patent application is composed of nitrogen, helium, and &gt;, T, and ions #虱, 虱. The group selected by the group to the ', child. The gas is separated from the #7., as in the layered body of the fifth item of the patent application scope, the compound of the shixi oxygen-burning compound is distributed to the right, and the repeating is shown in (4) or (8). Single 42 201034849 Poly Organic Stone Oxygen ^&gt; · /Rx \ 一-S ^ τ , κ χ Ry each independently an alkyl group of a spear substituent, an I substituted u, an i atom, an unsubstituted or an alkenyl group having a right enemy or a substituent, an aryl group substituted with an or substituted group, and the like In addition, the Rx system of the plural of the formula (4) is not a hydrogen atom. The η or the difference, except the above formula (a) 8. A method of manufacturing a laminate, a method for producing a laminate, wherein the layer of the ancient "hole layer" conductor layer is formed by opening a layer; the layer is formed by injecting ions into a layer having a polyorganic compound at the surface portion. Step (I) of the method for producing a gas barrier layer according to the eighth aspect of the patent application, wherein the step (I) is carried out by nitrogen, wherein The group consisting of milk, sputum and sputum is selected from a small number of gas ionization and injection steps. Selected to 10. The manufacturing method of claim 8 of the patent scope (o plasma ion implantation. r quote) Step 43 201034849 11. The manufacturing method of claim 8, wherein the aforementioned step (I) A step of transferring ions into a layer containing the polyorgano-oxygen-based compound while carrying a long strip-shaped molded article having a layer containing a polyorganosiloxane compound in a certain direction. 12. A structure for an electronic device, which is formed by a laminate of any one of claims 1 to 7. 13. An electronic device comprising the structure for an electronic device of claim 12 of the patent application.