TW201033737A - Radiation-sensitive resin composition, interlayer insulating film and the preparation method thereof - Google Patents

Radiation-sensitive resin composition, interlayer insulating film and the preparation method thereof Download PDF

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TW201033737A
TW201033737A TW99102202A TW99102202A TW201033737A TW 201033737 A TW201033737 A TW 201033737A TW 99102202 A TW99102202 A TW 99102202A TW 99102202 A TW99102202 A TW 99102202A TW 201033737 A TW201033737 A TW 201033737A
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compound
copolymer
resin composition
mass
group
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TW99102202A
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Chinese (zh)
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TWI524148B (en
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Masaaki Hanamura
Katsuya Nagaya
Hiroyuki Maruyama
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Jsr Corp
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  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Epoxy Resins (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)

Abstract

This invention provides a radiation-sensitive resin composition which can show excellent evenness of film thickness even if using silt coating method as a coating method, and an interlayer insulating film having high radiation-sensitivity, and having development margin capable of forming good pattern sharp even exceeding the most preferable developing time; and an interlayer insulating film having various performances such as high heat resistance, high solvent resistance, high transparency and low dielectric constant, and the like. A laminated isolation film formed by the said resin composition is also provided. The radiation-sensitive resin composition for forming a laminated isolation film comprises: (A) alkali soluble resin; (B) 1, 2-quinonediazide compound, and (C) the specific polymer having silicone chain. The laminated isolation film is formed by the radiation-sensitive resin composition for forming a laminated isolation film.

Description

201033737 ' 六、發明說明: 【發明所屬之技術領域】 本發明係關於感放射線性樹脂組成物以及層間絕緣膜 及其製造方法。 【先前技術】 薄膜電晶體(以下稱爲“TFT”)型液晶顯示元件及磁頭 元件、積體電路元件、固態圖像感測器元件等電子元件, 通常爲了在層狀佈置的佈線之間進行絕緣’設置層間絕緣 ❹ 膜。由於作爲形成層間絕緣膜的材料,較佳爲獲得必要圖 案形狀所需的步驟少、且具有高度平坦性的材料,因而感 放射線性樹脂組成物被廣泛地使用(參見專利文獻1和專利 文獻2)。 上述電子元件中,例如TFT型液晶顯示元件,由於要 經過在上述層間絕緣膜上形成透明電極膜,再在其上形成 液晶取向膜的步驟而製造,因而層間絕緣膜在透明電極膜 ^ 形成步驟中要經受髙溫條件,並且要經受電極圖案形成時 所使用的抗蝕層剝離液,因此,對其必須具有足夠好的耐 受性。 如此製得的層間絕緣膜,在其形成時的顯影步驟中, 即使顯影時間僅稍微超出最佳時間,在圖案與基板之間也 很容易發生顯影液滲透而導致脫落,因此,必須嚴格控制 顯影時間,並且製品的成品率方面很成問題。 近年來,在TFT型液晶顯示元件領域,正處於大螢幕 化、高亮度化、高精細化、快速回應化、薄型化等的趨勢, 201033737 作爲其所用的層間絕緣膜形成用組成物’要求具有高'敏感 度,並且所形成的層間絕緣膜’要求具有比以往更優越的 低介電常數、高透光率等高性能。 這樣,在由感放射線性樹脂組成物形成層間絕緣膜 時,作爲組成物’要求具有高敏感度’並且’要求在形成 步驟中的顯影步驟中,即使當顯影時間超出所定時間時’ 也不會發生圖案的脫落,而顯示良好的黏合性’且由其形 成的層間絕緣膜具有高耐熱性、高耐溶劑性、低介電常數、 © 高透光率等。但是,滿足這種要求的感放射線性樹脂組成 物迄今還是未知的。 而且,隨著近年來大螢幕電視的趨勢和生產成本降低 的要求,帶有彩色濾光片的基板的製造中所用的基板玻璃 尺寸正處於大型化的勢頭。因此,在基板上形成層間絕緣 膜時所進行的感放射線性樹脂組成物的塗布步驟中,採用 以前廣泛使用的旋塗法已經很困難,塗布方法替換爲由狹 槽狀噴嘴噴出組成物而進行塗布的所謂的縫模塗布法。這 胃 種縫模塗布法,與旋塗法相比,既具有能夠減少塗布所需 的組成物的量的優點,也有利於降低液晶顯示元件的生產 成本。但是,在這種縫模塗布法中,在真空吸附基板的吸 附狀態下,以一定的方向掃掠塗布噴嘴而進行塗布,然後, 保持在真空吸附用的空穴中的支撐銷升起而將基板頂起, 將其從塗布台移送到下一步驟。因此,在一連串的步驟中, 會出現塗膜上產生由真空吸附用的空穴引起的斑痕、支撐 銷引起的斑痕、塗布嘴掃掠方向上呈現的條狀斑痕等的情 201033737 形,從而成爲實現如上所述的高度平坦性的障礙。 技術文獻 專利文獻 專利文獻1:日本特開2001—354822號公報 專利文獻2 :日本特開200 1 - 343 743號公報 【發明内容】 發明槪要 發明欲解決的問題 ® 本發明是鑒於上述情況而作出的,其目的是提供—種 感放射線性樹脂組成物,即使採用縫模塗布法作爲塗布方 法,也能顯示出優良的膜厚均一性,並且具有高的射線敏 感度,在顯影步驟中,具有即使超出最佳顯影時間仍能夠 形成良好的圖案形狀的顯影裕度,以及提供高耐熱性、高 耐溶劑性、高透光率、低介電常數等各種性能優良的層間 絕緣膜及其製造方法。 本發明的上述目的和優點,第一,由一種感放射線性 ^ 樹脂組成物達成,其含有: (A)鹼可溶性樹脂; (Β)1,2·醌二叠氮化合物(以下稱爲“化合物(B)”);以及 (C)含有(cl)下述式(1°)表示的化合物(以下稱爲“化合 物(cl)”)、(c2)下述通式(2°)表示的化合物(以下稱爲“化合 物(c2)”)和(c3)具有下述通式(3)表示的基團的聚合性不飽 和化合物(以下稱爲“化合物(c3)”)的聚合性不飽和化合物 的共聚物(以下稱爲“共聚物(C)”)。 201033737 CH2 = CRiCOO-CaH2«-CpF2P + i (l〇) (式(1°)中,R1爲氫原子或甲基,a爲0〜6的整數,β 爲1~20的整數)。 CH2 = CR2COO-(CyH2Y-〇)a-R3 (2°) (式(2°)中,R2爲氫原子或甲基,R3爲碳原子數爲1~12 的烷基,γ爲2或3, a爲重複單元數,其平均數値爲1〜3 0)。201033737'. TECHNICAL FIELD OF THE INVENTION The present invention relates to a radiation sensitive resin composition, an interlayer insulating film, and a method of manufacturing the same. [Prior Art] Electronic components such as a thin film transistor (hereinafter referred to as "TFT") type liquid crystal display element and a magnetic head element, an integrated circuit element, and a solid-state image sensor element are usually used for wiring between layers arranged in a layer. Insulation 'Set the interlayer insulation ❹ film. The radiation-sensitive resin composition is widely used as a material for forming the interlayer insulating film, and a material having a small number of steps and a high flatness is required for obtaining a necessary pattern shape (see Patent Document 1 and Patent Document 2). ). In the above-mentioned electronic component, for example, a TFT-type liquid crystal display device is manufactured by a step of forming a transparent electrode film on the interlayer insulating film and forming a liquid crystal alignment film thereon, and thus the interlayer insulating film is formed in the transparent electrode film. It is subjected to the temperature conditions and is subjected to the resist stripping liquid used in the formation of the electrode pattern, and therefore, it must have sufficiently good resistance thereto. The interlayer insulating film thus obtained, in the developing step at the time of its formation, even if the development time is only slightly more than the optimum time, the developer permeates easily between the pattern and the substrate to cause detachment, and therefore, development must be strictly controlled. Time, and the yield of the product is very problematic. In recent years, in the field of TFT-type liquid crystal display devices, there is a trend of large-screening, high-brightness, high-definition, rapid response, and thinning. 201033737 is required as a composition for forming an interlayer insulating film. The high 'sensitivity and the formed interlayer insulating film' require high performance such as low dielectric constant and high light transmittance which are superior to the prior art. Thus, when the interlayer insulating film is formed of the radiation sensitive resin composition, it is required to have high sensitivity as the composition 'and 'requires that in the developing step in the forming step, even when the developing time exceeds the predetermined time' The pattern is detached, and the good adhesion is exhibited, and the interlayer insulating film formed therefrom has high heat resistance, high solvent resistance, low dielectric constant, high transmittance, and the like. However, the radiation sensitive resin composition satisfying this requirement has hitherto been unknown. Moreover, with the trend of large-screen televisions and the reduction in production cost in recent years, the size of substrate glass used in the manufacture of substrates with color filters is increasing in size. Therefore, in the coating step of the radiation sensitive resin composition which is performed when the interlayer insulating film is formed on the substrate, it has been difficult to employ the spin coating method which has been widely used in the past, and the coating method is replaced by spraying the composition by the slit nozzle. So-called slot die coating method of coating. This gastric seed coating method has an advantage of being able to reduce the amount of the composition required for coating as compared with the spin coating method, and is also advantageous for reducing the production cost of the liquid crystal display element. However, in the slit die coating method, the coating nozzle is swept in a certain direction in the adsorption state of the vacuum adsorption substrate, and then the support pin held in the cavity for vacuum adsorption is lifted. The substrate is lifted up and transferred from the coating station to the next step. Therefore, in a series of steps, there are cases in which a mark caused by holes for vacuum adsorption, a mark caused by a support pin, and a strip-like spot appearing in the direction of the coating nozzle are formed, thereby becoming a shape. A barrier to high flatness as described above is achieved. CITATION LIST Patent Literature Patent Literature 1: JP-A-2001-354822 (Patent Document 2) Japanese Laid-Open Patent Publication No. JP-A No. Hei No. Hei No. Hei. The purpose of the invention is to provide a radiation-sensitive resin composition which exhibits excellent film thickness uniformity and high ray sensitivity even in the development step, even if the slit coating method is used as the coating method. It has a development margin capable of forming a good pattern shape even beyond an optimum development time, and an interlayer insulating film excellent in various properties such as high heat resistance, high solvent resistance, high light transmittance, low dielectric constant, and the like method. The above objects and advantages of the present invention, first, are achieved by a radiation sensitive resin composition comprising: (A) an alkali-soluble resin; (Β) 1,2·醌diazide compound (hereinafter referred to as "a compound" (B) "); and (C) a compound represented by the following formula (1) by (cl) (hereinafter referred to as "compound (cl)"), (c2) a compound represented by the following formula (2) (hereinafter referred to as "compound (c2)") and (c3) a polymerizable unsaturated compound having a group represented by the following formula (3) (hereinafter referred to as "compound (c3)")) Copolymer (hereinafter referred to as "copolymer (C)"). 201033737 CH2 = CRiCOO-CaH2«-CpF2P + i (l〇) (In the formula (1°), R1 is a hydrogen atom or a methyl group, a is an integer of 0 to 6, and β is an integer of 1 to 20). CH2 = CR2COO-(CyH2Y-〇)a-R3 (2°) (In the formula (2°), R2 is a hydrogen atom or a methyl group, R3 is an alkyl group having 1 to 12 carbon atoms, and γ is 2 or 3 , a is the number of repeating units, and the average number 値 is 1~3 0).

R7R7

II

Si—— (3) R8 (式(3)中,R4、R5、R6、R7和R8各自獨立地爲碳原子 數爲1~20的烷基、苯基或下述通式(4)表示的基團,b爲 〇~3的整數)。 ❹ Π10 \ R9 Si 〇4 —Si—〇—— (4) \ R11 / :R11Si—(3) R8 (In the formula (3), R4, R5, R6, R7 and R8 are each independently an alkyl group having 1 to 20 carbon atoms, a phenyl group or a formula represented by the following formula (4) The group, b is an integer from 〇~3). ❹ Π10 \ R9 Si 〇4 —Si—〇—— (4) \ R11 / :R11

(式(4)中,R9、R1G 和 R &自獨立地爲碳原子數爲 的烷基或苯基,c爲0~3的整數) 由用上述感放射線 本發明的上述目的和優點,第_ 性樹脂組成物形成的層間絕綠_ 嗎逢成。 201033737 本發明的上述目的和優點,第三,由按照以下順序包 括以下步驟的層間絕緣膜的形成方法達成, (1) 將上述感放射線性樹脂組成物塗布在基板上形成 塗膜的步驟, (2) 對該塗膜的至少一部分照射放射線的步驟, (3) 顯影步驟,和 (4) 加熱步驟。 本發明的上述目的和優點,第四,由採用上述方法形 ® 成的層間絕緣膜達成。 若採用本發明,則可以提供一種感放射線性樹脂組成 物,即使採用縫模塗布法作爲塗布方法,也能顯示出優良 的膜厚均一性,並且具有高的射線敏感度,在顯影步驟中, 具有即使超出最佳顯影時間仍能夠形成良好的圖案形狀的 顯影裕度,並能提供高耐熱性、高耐溶劑性、高透光率、 低介電常數等各種性能優良的層間絕緣膜及其製造方法。 【實施方式】 ❹ W 實施發明用之形態 以下,對本發明進行具體的說明。 <(A)鹼可溶性樹脂> 作爲本發明感放射線性樹脂組成物中所含的(A)鹼可 溶性樹脂,只要是對於下述的顯影步驟中所用的顯影液(較 佳爲鹼顯影液)具有可溶性的鹼可溶性樹脂,則沒有特別的 限制。作爲這種(A)鹼可溶性樹脂,較佳具有選自羧基和羧 酸酐基構成的群組中的至少一種的鹼可溶性樹脂,可適合 201033737 使用例如含有(al)選自不飽和羧酸和不飽和羧酸酐構成的 群組中的至少一種(以下稱爲“化合物(a 1),’)和(a2)具有環氧 基的聚合性不飽和化合物(以下稱爲“化合物(a2)’’)的單體 的共聚物(以下稱爲“共聚物(A)”)。 共聚物(A)可以是由上述化合物(ai)和化合物(a2)組成 的單體的共聚物’或者也可以是除了上述化合物(al)和化 合物(a2)以外還含有(a3)它們以外的聚合性不飽和化合物 (以下稱爲“化合物a3”)的單體的共聚物,而較佳爲後者。 共聚物(A)可以通過將如上所述的單體較佳在溶劑 中,較佳在聚合引發劑的存在下進行自由基聚合而製備。 [化合物(al)] 本發明中使用的共聚物(A)中,基於由化合物(al)、(a2) 和(a3)衍生的重複單元的合計量,較佳含有5〜40質量%, 特佳含有5~25質量%由化合物(al)衍生的構成單元。當該 構成單元的比率爲5〜40質量%時,可以獲得射線敏感度、 顯影性和保存穩定性等各種性能更高水準地均衡的感放射 線性樹脂組成物。 化合物(a 1)是選自不飽和羧酸和不飽和羧酸酐構成的 群組中的至少一種,可以列舉例如單羧酸、二羧酸、二羧 酸的酸酐、多元羧酸的單[(甲基)丙烯醯氧基烷基]酯、兩末 端具有羧基和羥基的聚合物的單(甲基)丙烯酸酯、具有羧 基的多環式化合物及其酸酐等。 作爲其具體例子,單羧酸可以列舉例如丙烯酸、甲基 丙烯酸、巴豆酸等; 201033737 二羧酸可以列舉例如馬來酸、富馬酸、檸康酸、中康 酸、衣康酸等; 二羧酸的酸酐可以列舉例如作爲上述二羧酸而例示的 化合物的酸酐等; 多元羧酸的單[(甲基)丙烯醯氧基烷基]酯可以列舉例 如琥珀酸單[2-(甲基)丙烯醯氧基乙基]酯、鄰苯二甲酸單 [2-(甲基)丙烯醯氧基乙基]酯等; 兩末端具有羧基和羥基的聚合物的單(甲基)丙烯酸酯 © 可以列舉例如ω-羧基聚己內酯的單(甲基)丙烯酸酯等; 具有羧基的多環式化合物及其酸酐可以列舉例如5-羧 基二環[2.2.1]庚-2-烯、5,6-二羧基二環[2.2.1]庚-2-烯、5-羧基-5-甲基二環[2.2.1]庚-2-烯、5-羧基-5-乙基二環[2.2.1] 庚-2-烯、5-羧基-6-甲基二環[2·2·1]庚-2-烯、5-羧基-6-乙 基二環[2.2.1]庚-2-烯、5,6-二羧基二環[2.2.1]庚-2-烯酸酐 等。 它們當中,較佳使用單羧酸、二羧酸的酸酐,從共聚 W 合反應性、對於鹼水溶液的溶解性和容易獲得性方面考 慮,特佳使用丙烯酸、甲基丙烯酸、馬來酸酐。這些化合 物(al)可以單獨或組合使用。 (化合物(a2)) 本發明中使用的共聚物(A),基於由化合物(al)、(a2) 和(a3)衍生的重複單元的合計量,較佳含有10〜80質量%, 特佳含有30〜80質量%由化合物(a2)衍生的構成單元。當該 構成單元的比率爲10~80質量%時,可以獲得層間絕緣膜 -10- 201033737 的耐熱性和耐溶劑性以及感放射線性樹脂組成物的保 定性更高水準地均衡的感放射線性樹脂組成物。 化合物(a2)是具有環氧基的聚合性不飽和化合物 裏,作爲環氧基,可以列舉環氧乙基(具有1,2-環氧 構)、氧雜環丁基(具有1,3-環氧基結構)等。 作爲具有環氧乙基的聚合性不飽和化合物,可以 例如丙烯酸縮水甘油酯、甲基丙烯酸縮水甘油酯、α-丙烯酸縮水甘油酯、α-正丙基丙烯酸縮水甘油酯、α-® 基丙烯酸縮水甘油酯、丙烯酸3,4-環氧基丁基酯、甲 烯酸3,4-環氧基丁基酯、丙烯酸6,7-環氧基庚基酯、 丙烯酸6,7-環氧基庚基酯、α-乙基丙烯酸6,7-環氧基 酯、鄰乙烯基苄基縮水甘油基醚、間乙烯基苄基縮水 基醚、對乙烯基苄基縮水甘油基醚、甲基丙烯酸- 3,4· 基環己基酯等。其中,較佳爲甲基丙烯酸縮水甘油酯 基丙烯酸6,7-環氧基庚基酯、鄰乙烯基苄基縮水甘 醚、間乙烯基苄基縮水甘油基醚、對乙烯基苄基縮水 基醚、甲基丙烯酸3,4-環氧基環己基酯等; 作爲具有氧雜環丁基的不飽和化合物,可以列舉 3-(丙烯醯氧基甲基)氧雜環丁烷、3-(丙烯醯氧基甲3 甲基氧雜環丁烷、3-(丙烯醯氧基甲基)-3-乙基氧雜 烷、3-(丙烯醯氧基甲基)-2-苯基氧雜環丁烷、3-(2-丙 氧基乙基)氧雜環丁烷、3-(2-丙烯醯氧基乙基)-2-乙基 環丁烷、3-(2-丙烯醯氧基乙基)-3-乙基氧雜環丁烷、 丙烯醯氧基乙基)-2-苯基氧雜環丁烷、3-(甲基丙烯酿 存穩 。這 基結 列舉 乙基 正丁 基丙 甲基 庚基 甘油 環氧 、甲 油基 甘油 例如 g )-2- 環丁 烯醯 氧雜 3-(2- 氧基(In the formula (4), R9, R1G and R & from independently an alkyl group or a phenyl group having a carbon number, and c is an integer of 0 to 3) The above objects and advantages of the present invention are obtained by using the above-described radiation. The inter-layer green _ formed by the _ resin composition is a good result. 201033737 The above objects and advantages of the present invention are, in a third, achieved by a method of forming an interlayer insulating film comprising the following steps, (1) a step of applying the above-described radiation sensitive resin composition onto a substrate to form a coating film, ( 2) a step of irradiating at least a portion of the coating film with radiation, (3) a developing step, and (4) a heating step. The above objects and advantages of the present invention, and fourthly, are achieved by an interlayer insulating film formed by the above method. According to the present invention, it is possible to provide a radiation sensitive resin composition which exhibits excellent film thickness uniformity even with a slit die coating method as a coating method, and has high ray sensitivity in the developing step. It has a development margin capable of forming a good pattern shape even if the optimum development time is exceeded, and can provide an interlayer insulating film excellent in various properties such as high heat resistance, high solvent resistance, high light transmittance, and low dielectric constant. Production method. [Embodiment] 形态W Mode for Carrying Out the Invention Hereinafter, the present invention will be specifically described. <(A) Alkali-soluble resin> The (A) alkali-soluble resin contained in the radiation-sensitive resin composition of the present invention is used as long as it is a developing solution (preferably an alkali developing solution) used in the development step described below. There is no particular limitation on the soluble alkali-soluble resin. As such (A) alkali-soluble resin, an alkali-soluble resin having at least one selected from the group consisting of a carboxyl group and a carboxylic anhydride group is preferable, and it is suitable for use in 201033737, for example, containing (al) selected from unsaturated carboxylic acids and not At least one of the group consisting of saturated carboxylic anhydrides (hereinafter referred to as "compound (a 1), ') and (a2) a polymerizable unsaturated compound having an epoxy group (hereinafter referred to as "compound (a2)'') A copolymer of a monomer (hereinafter referred to as "copolymer (A)"). The copolymer (A) may be a copolymer of a monomer composed of the above compound (ai) and the compound (a2) or may contain (a3) other than the above compound (al) and compound (a2). A copolymer of a monomer of a polymerizable unsaturated compound (hereinafter referred to as "compound a3"), and the latter is preferable. The copolymer (A) can be produced by subjecting the monomer as described above to a radical polymerization in a solvent, preferably in the presence of a polymerization initiator. [Compound (al)] The copolymer (A) used in the present invention preferably contains 5 to 40% by mass based on the total of the repeating units derived from the compounds (al), (a2) and (a3). It is preferable to contain 5 to 25% by mass of a constituent unit derived from the compound (al). When the ratio of the constituent unit is 5 to 40% by mass, various radiation-sensitive linear resin compositions having higher levels of performance such as radiation sensitivity, developability, and storage stability can be obtained. The compound (a1) is at least one selected from the group consisting of unsaturated carboxylic acids and unsaturated carboxylic anhydrides, and examples thereof include monocarboxylic acids, dicarboxylic acids, acid anhydrides of dicarboxylic acids, and monocarboxylic acids of polycarboxylic acids. A methyl (meth) decyloxyalkyl] ester, a mono(meth) acrylate of a polymer having a carboxyl group and a hydroxyl group at both terminals, a polycyclic compound having a carboxyl group, an acid anhydride thereof, and the like. As a specific example, the monocarboxylic acid may, for example, be acrylic acid, methacrylic acid, crotonic acid or the like; and the 201033737 dicarboxylic acid may, for example, be maleic acid, fumaric acid, citraconic acid, mesaconic acid, itaconic acid or the like; Examples of the acid anhydride of the carboxylic acid include an acid anhydride of a compound exemplified as the above dicarboxylic acid; and a mono[(meth)acryloxyalkylalkyl] ester of a polyvalent carboxylic acid, for example, succinic acid mono [2-(methyl) a propylene oxyethyl ester, a mono [2-(methyl) propylene methoxyethyl] phthalate, etc.; a mono(meth) acrylate of a polymer having a carboxyl group and a hydroxyl group at both ends © For example, a mono(meth)acrylate of ω-carboxypolycaprolactone or the like; a polycyclic compound having a carboxyl group and an acid anhydride thereof may, for example, be 5-carboxybicyclo[2.2.1]hept-2-ene, 5 , 6-dicarboxybicyclo[2.2.1]hept-2-ene, 5-carboxy-5-methylbicyclo[2.2.1]hept-2-ene, 5-carboxy-5-ethylbicyclo[ 2.2.1] Hept-2-ene, 5-carboxy-6-methylbicyclo[2·2·1]hept-2-ene, 5-carboxy-6-ethylbicyclo[2.2.1]g- 2-ene, 5,6-dicarboxybicyclo[2.2.1]hept-2-ene anhydride, and the like. Among them, an acid anhydride of a monocarboxylic acid or a dicarboxylic acid is preferably used, and acrylic acid, methacrylic acid, and maleic anhydride are particularly preferably used in terms of copolymerization reactivity, solubility in an aqueous alkali solution, and easy availability. These compounds (al) can be used singly or in combination. (Compound (a2)) The copolymer (A) used in the present invention preferably contains 10 to 80% by mass based on the total amount of the repeating units derived from the compounds (al), (a2) and (a3). It contains 30 to 80% by mass of a constituent unit derived from the compound (a2). When the ratio of the constituent unit is 10 to 80% by mass, heat resistance and solvent resistance of the interlayer insulating film-10-201033737 and radiation sensitivity of the radiation-sensitive resin composition can be obtained at a higher level. Composition. The compound (a2) is a polymerizable unsaturated compound having an epoxy group, and examples of the epoxy group include an epoxy group (having a 1,2-epoxy structure) and an oxetanyl group (having 1,3-). Epoxy structure) and the like. As the polymerizable unsaturated compound having an epoxy group, for example, glycidyl acrylate, glycidyl methacrylate, α-glycidyl acrylate, α-n-propyl acrylate glycidyl ester, α-® acrylonitrile shrinkage can be used. Glyceride, 3,4-epoxybutyl acrylate, 3,4-epoxybutyl methacrylate, 6,7-epoxyheptyl acrylate, 6,7-epoxyglycol acrylate Base ester, 6,7-epoxy ester of α-ethyl acrylate, o-vinylbenzyl glycidyl ether, m-vinylbenzyl glycidyl ether, p-vinylbenzyl glycidyl ether, methacrylic acid- 3,4· Cyclohexyl ester and the like. Among them, preferred is glycidyl methacrylate 6,7-epoxyheptyl acrylate, o-vinyl benzyl glycidyl ether, m-vinylbenzyl glycidyl ether, p-vinylbenzyl condensed base. Ether, 3,4-epoxycyclohexyl methacrylate, etc.; as the unsaturated compound having an oxetanyl group, 3-(acryloxymethyl)oxetane, 3-( Propylene methoxymethyl 3 methyl oxetane, 3-(acryloxymethyl)-3-ethyloxacyclo, 3-(acryloxymethyl)-2-phenyl oxa Cyclobutane, 3-(2-propoxyethyl)oxetane, 3-(2-propenyloxyethyl)-2-ethylcyclobutane, 3-(2-propenyloxy) Ethyl ethyl)-3-ethyloxetane, propylene methoxyethyl)-2-phenyl oxetane, 3-(methyl propylene styrene stable. Butyl propyl methyl heptyl glycerol epoxy, methyl glycerin such as g)-2-cyclobutenoxa oxa 3-(2-oxyl

201033737 甲基)氧雜環丁烷、3-(甲基丙烯醯氧基甲基)-2-甲基拳 丁烷、3-(甲基丙烯醯氧基甲基)-3-乙基氧雜環丁烷、 基丙烯醯氧基甲基)-2-苯基氧雜環丁烷、3-(2-甲基丙 氧基乙基)氧雜環丁烷、3-(2-甲基丙烯醯氧基乙基)-2 氧雜環丁烷、3-(2-甲基丙烯醯氧基乙基)-3-乙基氧雜 烷、3-(2-甲基丙烯醯氧基乙基)-2-苯基氧雜環丁烷等 這些化合物(a2)可以單獨或組合使用。 [化合物(a3)] 本發明中使用的共聚物(A),基於由化合物(a 1) 和(a3)衍生的重複單元的合計量,較佳含有1~50質j 特佳含有5〜50質量%由化合物(a3)衍生的構成單元。 構成單元的比率爲1〜50質量%時,可以獲得所形成纪 絕緣膜的耐熱性和耐溶劑性以及感放射線性樹脂組拭 於鹼水溶液的顯影性更高水準地均衡的感放射線性植 成物。 化合物(a3)只要是具有自由基聚合性的不飽和 物,則對其沒有特別的限制。作爲化合物(a3),可以 例如甲基丙烯酸烷基酯、丙烯酸烷基酯、甲基丙烯酵 基酯、具有羥基的甲基丙烯酸酯、丙烯酸環烷基酯、 丙烯酸芳基酯、丙烯酸芳基酯、不飽和二羧酸二酯、 不飽和化合物、馬來醯亞胺化合物、不飽和芳香族化1 共軛二烯; 具有下述式(I)表示的酚性羥基的不飽和化合物; 具有四氫呋喃骨架、呋喃骨架、四氫吡喃骨架、 ,雜環 3-(甲 烯醯 -乙基 :環丁 (a2) %, 當該 層間 物對 脂組 化合 列舉 環烷 甲基 二環 -物、 吡喃 -12- 201033737 骨架或下述式(II)表示的骨架的不飽和化合物;以及其他不 飽和化合物。201033737 Methyl)oxetane, 3-(methacryloxymethyl)-2-methylbutane, 3-(methacryloxymethyl)-3-ethyloxa Cyclobutane, propylene oxymethyl)-2-phenyl oxetane, 3-(2-methylpropoxyethyl) oxetane, 3-(2-methylpropene Oxyloxyethyl)-2oxetane, 3-(2-methylpropenyloxyethyl)-3-ethyloxaline, 3-(2-methylpropenyloxyethyl) These compounds (a2) such as 2-phenyloxetane may be used singly or in combination. [Compound (a3)] The copolymer (A) used in the present invention preferably contains 1 to 50 masses, particularly preferably 5 to 50, based on the total amount of the repeating units derived from the compounds (a 1) and (a3). The mass % is a constituent unit derived from the compound (a3). When the ratio of the constituent unit is from 1 to 50% by mass, the heat resistance and solvent resistance of the formed insulating film and the radiolucent sensitization of the radioactive resin group wiped in the alkali aqueous solution at a higher level can be obtained. Things. The compound (a3) is not particularly limited as long as it is a radical polymerizable unsaturated material. As the compound (a3), for example, an alkyl methacrylate, an alkyl acrylate, a methacrylyl ester, a methacrylate having a hydroxyl group, a cycloalkyl acrylate, an aryl acrylate, an aryl acrylate can be used. , an unsaturated dicarboxylic acid diester, an unsaturated compound, a maleimide compound, an unsaturated aromatic 1 conjugated diene; an unsaturated compound having a phenolic hydroxyl group represented by the following formula (I); having tetrahydrofuran a skeleton, a furan skeleton, a tetrahydropyran skeleton, a heterocyclic 3-(methene-ethyl:cyclobutane (a2)%, when the interlayer is a lipid group, a cycloalkylmethylbicyclic-substrate, pyridyl Iso-12-201033737 Skeleton or an unsaturated compound of the skeleton represented by the following formula (II); and other unsaturated compounds.

(式(I)中,RI爲氫原子或碳原子數爲1~4的烷基, R11〜RVI相同或不同,爲氫原子、羥基或碳原子數爲1〜4的 烷基’ B爲單鍵、-C00-、或- CONH-,m爲〇~3的整數, 其中’ RU〜RVI中至少一者爲羥基。(In the formula (I), RI is a hydrogen atom or an alkyl group having 1 to 4 carbon atoms, and R11 to RVI are the same or different, and are a hydrogen atom, a hydroxyl group or an alkyl group having 1 to 4 carbon atoms. The bond, -C00-, or -CONH-, m is an integer of 〇~3, wherein at least one of 'RU~RVI is a hydroxyl group.

(II) 參 作爲它們的具體例子,作爲甲基丙烯酸烷基酯,可以 列舉例如甲基丙烯酸甲酯、甲基丙烯酸乙酯、甲基丙烯酵 正丁基酯、甲基丙烯酸仲丁基酯、甲基丙烯酸叔丁基酯、 甲基丙烯酸2-乙基己基酯、甲基丙烯酸異癸基酯、甲基朽 -13- 201033737 烯酸正十二烷基酯、甲基丙烯酸十三烷基酯、甲基丙烯酸 正十八烷基酯等; 作爲丙烯酸烷基酯,可以列舉例如丙烯酸甲酯、丙烯 酸異丙酯等; 作爲甲基丙烯酸環烷基酯,可以列舉例如甲基丙烯酸 環己基酯、甲基丙烯酸2_甲基環己基酯、甲基丙烯酸三環 [5.2.1.02’6]癸烷-8-基酯、甲基丙烯酸三環[5.2.1.02’6]癸烷 -8-基氧基乙基酯、甲基丙烯酸異冰片基酯等; © 作爲具有羥基的甲基丙烯酸酯,可以列舉例如甲基丙 烯酸羥基甲酯、甲基丙烯酸2-羥基乙酯、甲基丙烯酸3-羥 基丙酯、甲基丙烯酸4-羥基丁酯、二甘醇單甲基丙烯酸酯、 甲基丙烯酸2,3-二羥基丙酯、2 -甲基丙烯醯氧基乙基糖 苷、甲基丙烯酸4-羥基苯基酯等; 作爲丙烯酸環烷基酯,可以列舉.例如丙烯酸環己基 酯、丙烯酸2-甲基環己基酯、丙烯酸三環[5.2.1.02’6]癸烷 -8-基酯、丙烯酸三環[5.2.1.02’6]癸烷-8-基氧基乙基酯、丙 ® 烯酸異冰片基酯等; 作爲甲基丙烯酸芳基酯,可以列舉例如甲基丙烯酸苯 基酯、甲基丙烯酸苄基酯等; 作爲丙烯酸芳基酯,可以列舉例如丙烯酸苯基酯、丙 烯酸苄基酯等: 作爲不飽和二羧酸二酯,可以列舉例如馬來酸二乙 酯、富馬酸二乙酯、衣康酸二乙酯等; 作爲二環不飽和化合物,可以列舉例如二環[2.2.1]庚 -14- 201033737 -2-烯、5_ 甲基二環[2.2.1]庚-2_ 烯、5_ 乙基二環[2.2.1]庚·2- 稀、5-甲氧基二環[2 2丨]庚2烯、5_乙氧基二環[2 2丨]庚 -2-嫌、5,6-二甲氧基二環[2 2丨]庚-2_烯等; 作爲馬來醯亞胺化合物,可以列舉例如N_苯基馬來醯 亞胺、N-環己基馬來醯亞胺、N_苄基馬來醯亞胺、N-(4-羥 基苯基)馬來醯亞胺、N-(4-羥基苄基)馬來醯亞胺、N-琥珀 醯亞胺基-3-馬來醯亞胺基苯甲酸酯、N-琥珀醯亞胺基-4-馬來醯亞胺基丁酸酯、N-琥珀醯亞胺基-6_馬來醯亞胺基己 ^ 酸酯、N-琥珀醯亞胺基-3-馬來醯亞胺基丙酸酯、N-(9-吖啶 基)馬.來醯亞胺等; 作爲不飽和芳香族化合物’可以列舉例如苯乙嫌、α · 甲基苯乙烯、間甲基苯乙烯、對甲基苯乙烯、乙烯基甲苯、 對甲氧基苯乙烯等; 作爲共轭二烯’可以列舉例如丨,3-丁二嫌、異戊二稀、 2,3-二甲基-1,3-丁二嫌等; 作爲具有上述式(I)表示的酚性骨架的不飽和化合物’ ® 可以列舉例如下述式(I— D〜(1 一 5)各自表示的化合物等; -15- 201033737(II) As a specific example thereof, examples of the alkyl methacrylate include methyl methacrylate, ethyl methacrylate, methacrylic acid n-butyl ester, and sec-butyl methacrylate. Tert-butyl methacrylate, 2-ethylhexyl methacrylate, isodecyl methacrylate, methyl -13 - 201033737 n-dodecyl enoate, tridecyl methacrylate And n-octadecyl methacrylate or the like; examples of the alkyl acrylate include methyl acrylate and isopropyl acrylate; and examples of the cycloalkyl methacrylate include cyclohexyl methacrylate. 2-methylcyclohexyl methacrylate, tricyclo[5.2.1.0''6]nonane-8-yl methacrylate, tricyclo[5.2.1.0''6]nonane-8-yloxy methacrylate Ethyl ethyl ester, isobornyl methacrylate, etc.; as a methacrylate having a hydroxyl group, for example, hydroxymethyl methacrylate, 2-hydroxyethyl methacrylate, 3-hydroxypropyl methacrylate Ester, 4-hydroxybutyl methacrylate, diethylene glycol monomethyl Acrylate, 2,3-dihydroxypropyl methacrylate, 2-methylpropenyloxyethyl glycoside, 4-hydroxyphenyl methacrylate, etc.; as a cycloalkyl acrylate, for example, acrylic acid Cyclohexyl ester, 2-methylcyclohexyl acrylate, tricyclo[5.2.1.02'6]nonane-8-yl acrylate, tricyclo[5.2.1.0''6]nonane-8-yloxy B Examples of the aryl methacrylate include phenyl methacrylate and benzyl methacrylate; and the aryl acrylate may, for example, be benzo acrylate. a base ester, a benzyl acrylate or the like: Examples of the unsaturated dicarboxylic acid diester include diethyl maleate, diethyl fumarate, diethyl itaconate, and the like; as a bicyclic unsaturated compound, For example, a bicyclo[2.2.1]heptane-14-201033737-2-ene, a 5-methylbicyclo[2.2.1]hept-2-ene, a 5-ethylbicyclo[2.2.1]heptan-2-diene 5-methoxybicyclo[2 2丨]heptane 2,ethoxy 5-cyclo[2 2丨]hept-2-pyrene, 5,6-dimethoxybicyclo[2 2丨] Geng-2_ene, etc.; as Malay The amine compound may, for example, be N-phenylmaleimide, N-cyclohexylmaleimide, N-benzylmaleimide, N-(4-hydroxyphenyl)maleimide. , N-(4-hydroxybenzyl)maleimide, N-succinimide-3-maleimidobenzoate, N-ammonium imino-4-malay Iminobutyrate, N-succinimide-6-maleimidohexanoate, N-succinimide-3-maleimidopropionate, N- (9-Aridinyl), quinone, etc.; as the unsaturated aromatic compound, for example, phenethyl styrene, α-methyl styrene, m-methyl styrene, p-methyl styrene, vinyl Toluene, p-methoxystyrene, etc.; as a conjugated diene, for example, fluorene, 3-butane, isoprene, 2,3-dimethyl-1,3-butane, etc.; The unsaturated compound ' ® having a phenolic skeleton represented by the above formula (I) may, for example, be a compound represented by the following formula (I-D to (1 to 5); -15-201033737

(I-l) (1-2) -16- 201033737(I-l) (1-2) -16- 201033737

R1 ΟR1 Ο

»11 R1 (1-4)»11 R1 (1-4)

(1-5) -17- 201033737 (式(I 一 1)和式(I— 3)中的η各自爲1~3的整數,式(I — 5)中的 R1、R11、Riii、Riv、rv 和 Rvi 的定義,各 自與上述式(I)中相同)。 作爲具有四氫呋喃骨架的不飽和化合物,可以列舉例 如^甲基)丙烯酸四氫糠基酯、2-(甲基)丙烯醯氧基-丙酸四 氫糠基酯、3-(甲基)丙烯醯氧基四氫呋喃-2-酮等; 作爲具有呋喃骨架的不飽和化合物,可以列舉例如2-甲基-5-(3-呋喃基)-1-戊烯-3-酮、(甲基)丙烯酸糠基酯、1-呋喃-2-丁基-3-烯-2-酮、1·呋喃-2-丁基-3-甲氧基-3-烯- 2-酮、6-(2-呋喃基)-2-甲基-1·己烯-3-酮、6-呋喃-2-基-己-1-烯-3-酮、(甲基)丙烯酸2-呋喃-2-基-1-甲基-乙基酯、6-(2-呋喃基)-6-甲基-1-庚烯-3-酮等; 作爲具有四氫吡喃骨架的不飽和化合物,可以列舉例 如(甲基)丙烯酸(四氫吡喃-2-基)甲基酯、2,6-二甲基-8-(四 氫吡喃-2-基氧基)-辛-1-烯-3-酮、2-(甲基)丙烯酸四氫吡喃 -2-基酯、1-(四氫吡喃-2-氧基)-丁基-3-烯-2-酮等;作爲具 有吡喃骨架的不飽和化合物,可以列舉例如4-(1,4-二氧雜 -5-氧代-6-庚烯基)-6-甲基-2-吡喃酮' 4-(1,5-二氧雜-6-氧 代-7-辛烯基)-6-甲基-2-耻喃酮等; 作爲具有上述式(II)表示的骨架的不飽和化合物’可以 列舉例如聚合度爲2〜10的聚乙二醇單(甲基)丙烯酸酯、聚 合度爲2〜10的聚丙二醇單(甲基)丙烯酸酯等; 作爲其他不飽和化合物’可以列舉例如丙烯腈、甲基 丙烯腈、丙烯醯胺、甲基丙烯醯胺等。 -18- 201033737 它們當中,較佳使用甲基丙烯酸烷基酯、甲基丙嫌酸環 烷基酯、丙烯酸環烷基酯、馬來醯亞胺化合物、不飽和芳 香族化合物、具有上述式(I)表示的酚性羥基的不飽和化合 物、具有四氫呋喃骨架、呋喃骨架、四氫吡喃骨架、卩比喃 骨架或上述式(II)表示的骨架的不飽和化合物,從共聚反應 性和對於鹼水溶液的溶解性方面考慮,特佳使用選自苯乙 烯、甲基丙烯酸叔丁基酯、甲基丙烯酸三環[5.2.1.〇2,6]癸 烷-8-基酯、對甲氧基苯乙烯、丙烯酸2-甲基環己基酯、N_ ® 苯基馬來醯亞胺、N-環己基馬來醯亞胺、(甲基)丙烯酸四 氫糠基酯、聚乙二醇(η =2~ 10)單(甲基)丙烯酸酯、3_(甲基 )丙烯醯氧基四氫呋喃-2-酮、(甲基)丙烯酸4-羥基苄基酯、 (甲基)丙烯酸4-羥基苯基酯、鄰羥基苯乙烯、對羥基苯乙 烯、α-甲基·對羥基苯乙烯構成的群組中的至少—種。 這些化合物(a3)可以單獨或組合使用。 作爲本發明中使用的共聚物(A)的較佳具體例子,可以 列舉例如甲基丙烯酸/甲基丙烯酸三環[5.2.1.02’6]癸烷-8_ 基酯/丙烯酸2-甲基環己基酯/甲基丙烯酸縮水甘油酯/苯乙 烯共聚物、甲基丙烯酸/甲基丙烯酸四氫糠基酯/甲基丙烯 酸縮水甘油酯/N-環己基馬來醯亞胺/甲基丙烯酸十二烷基 酯/α-甲基-對-羥基苯乙烯共聚物、苯乙烯/甲基丙烯酸/甲 基丙烯酸縮水甘油酯/甲基丙烯酸(3 -乙基氧雜環丁烷-3-基 酯)/甲基丙烯酸三環[5.2.1.02,6]癸烷-8-基酯共聚物等。 對本發明中使用的共聚物(Α)採用凝膠滲透色譜測定 的聚苯乙烯換算的重量平均分子量(以下稱爲“ M w”)較佳爲 -19- 201033737 2xl〇3〜lxl〇5,更較佳爲5xl03〜5xl04。如果Mw不足2χ 則會出現顯影裕度不夠好的情況,從而出現所得塗膜 膜率等下降,且所得層間絕緣膜的圖案形狀、耐熱性 差的情況。另一方面,若超過lxlO5,則會出現敏感度1 從而圖案形狀變差的情況。另外,分子量分佈(以下 “Mw/Mn”,其中上述Μη是對共聚物(A)用凝膠滲透色 定的聚苯乙烯換算的數均分子量)較佳爲5.0以下, 爲3.0以下。如果Mw/Mn超過5.0,則會出現所得層 ^ 緣膜的圖案形狀變差的情況。 含有如上所述的共聚物(A)的感放射線性樹脂 物,在顯影時不會產生顯影殘留,能夠容易地形成預 圖案形狀。 作爲共聚物(A)的製備中所用的溶劑,可以列舉例 甘醇二烷基醚、丙二醇烷基醚乙酸酯、丙二醇烷基醚 酯、酮、烷氧基丙酸酯等。 Ο 作爲其具體的例子,作爲二甘醇二烷基醚,可以 例如二甘醇二甲醚、二甘醇二乙醚、二甘醇乙基甲基酸 作爲丙二醇烷基醚乙酸酯,可以列舉例如丙二醇 乙酸酯、丙二醇乙醚乙酸酯、丙二醇丙醚乙酸酯等; 作爲烷氧基丙酸酯,可以列舉例如3-甲氧基丙酸 等。 其中,較佳爲二甘醇二烷基醚、丙二醇烷基醚乙® 烷氧基丙酸酯,特別優選使用二甘醇二甲醚、二甘醇 甲基醚、丙二醇乙醚乙酸酯、丙二醇甲醚乙酸酯、3· 1 03, 的殘 等變 :降, 稱爲 譜測 更佳 間絕 組成 定的 如二 丙酸 列舉 ;等: 甲醚 甲酯 ?酯、 乙基 -甲氧 •20- 201033737 基丙酸甲酯。 作爲共聚物(A)的製備中所用的聚合引發劑,可以使用 通常已知作爲自由基聚合引發劑的聚合引發劑。可以列舉 例如2,2’-偶氮二異丁腈、2,2’-偶氮二-(2,4-二甲基戊腈)、 2,2’-偶氮二- (4-甲氧基-2,4·二甲基戊腈)等偶氮化合物。 在共聚物(A)的製備中,還可以使用調節分子量用的分 子量調節劑。作爲其具體例子,可以列舉正己硫醇、正辛 硫醇、正十二烷硫醇、第三十二烷硫醇、锍基乙酸等硫醇; 二甲基咕噸酮硫化物、二異丙基咕噸酮二硫化物等咕噸 酮;萜品油烯、α-甲基苯乙烯二聚物等。 <化合物(Β)> 本發明中所用的化合物(Β)是通過照射射線能夠產生 羧酸的1,2-醌二叠氮化合物,可以使用酚性化合物或醇性 化合物(以下稱爲“母核”)與1,2-萘醌二疊氮磺醯鹵的縮合 物。 作爲上述母核,可以列舉例如三羥基二苯酮、四羥基 二苯酮、五羥基二苯酮、六羥基二苯酮、(多羥基苯基)烷 等。 作爲其具體例子,作爲三羥基二苯酮,可以列舉例如 2,3,4-三羥基二苯酮、2,4,6-三羥基二苯酮等; 作爲四羥基二苯酮,可以列舉2,2’,4,4’-四羥基二苯 酮、2,3,4,3’-四羥基二苯酮、2,3,4,4’-四羥基二苯酮、 2,3,4,2’-四羥基-4’-甲基二苯酮、2,3,4,4’-四羥基-3’-甲氧 基二苯酮等; -21- 201033737 作爲五羥基二苯酮,可以列舉例如2,3,4,2’,6’-五羥基 二苯酮等; 作爲六羥基二苯酮,可以列舉例如2,4,6,3’,4’,5’-六羥 基二苯酮、3,4,5,3’,4’,5’-六羥基二苯酮等; 作爲(多羥基苯基)烷,可以列舉例如二(2,4-二羥基苯 基)甲烷、二(對羥基苯基)甲烷、三(對羥基苯基)甲烷、1,1,1· 三(對羥基苯基)乙烷、二(2,3,4-三羥基苯基)甲烷、2,2-二 (2,3,4·三羥基苯基)丙烷、1,1,3-三(2,5-二甲基-4-羥基苯 基)-3-苯基丙烷、4,4’-[1-[4-[1-[4-羥基苯基]-1-甲基乙基] 苯基]亞乙基]雙酚、二(2,5-二甲基-4-羥基苯基)-2-羥基苯 基甲烷、3,3,3’,3’-四甲基-1,1’-螺雙茚 _5,6,7,5’,6’,7’-六 醇、2,2,4-三甲基-7,2’,4’-三羥基黃烷等; 除此以外,還可以適當地使用將以上例示的母核的酯 鍵改爲醯胺鍵後的1,2-萘醌二叠氮磺醯胺類,例如2,3,4-三羥基二苯酮-1,2-萘醌二叠氮-4-磺醯胺等。 這些母核中,較佳爲 2,3,4,4’-四羥基二苯酮、 4,4’-[1-[4-[1-[4-羥基苯基]-1-甲基乙基]苯基]亞乙基]雙 酚。 作爲1,2-萘醌二疊氮磺醯鹵,較佳爲1,2-萘醌二疊氮 磺醯氯。作爲其具體例子,可以列舉1,2-萘醌二疊氮-4_碌 醯氯和1,2-萘酷二疊氮-5-磺酿氯。其中,優選使用丨,2萘 醌二疊氮-5-磺醯氯。 在縮合反應中,相對於母核中的羥基數,可使用較佳 相當於30〜85莫耳%、更佳相當於50~7〇莫耳%的丨,2萘醌 -22- 201033737 二疊氮磺醯鹵。 縮合反應可以採用已知的方法進行。 這些化合物(B)可以單獨或者2種以上組合使用。 化合物(B)的使用比率,相對於1〇〇質量份(A)鹼可溶 性樹脂,較佳爲5〜100質量份,更佳爲1〇~50質量份。當 該比率爲5~100質量份時’照射射線的部分與未照射部分 對於作爲顯影液的鹼水溶液的溶解度的差値大,從而使圖 案良好,並且,所得層間絕緣膜的耐熱性和耐溶劑性也良(1-5) -17- 201033737 (wherein η in the formula (I-1) and the formula (I-3) is an integer of 1 to 3, and R1, R11, Riii, Riv in the formula (I-5), The definitions of rv and Rvi are the same as in the above formula (I). Examples of the unsaturated compound having a tetrahydrofuran skeleton include tetramethyl decyl methacrylate, 2-(meth) propylene methoxy-tetrahydro decyl propionate, and 3-(methyl) propylene hydride. Oxytetrahydrofuran-2-one or the like; as the unsaturated compound having a furan skeleton, for example, 2-methyl-5-(3-furyl)-1-penten-3-one, cesium (meth)acrylate Base ester, 1-furan-2-butyl-3-en-2-one, 1·furan-2-butyl-3-methoxy-3-ene-2-one, 6-(2-furanyl) -2-methyl-1·hexen-3-one, 6-furan-2-yl-hex-1-en-3-one, 2-furan-2-yl-1-yl (meth)acrylate a base-ethyl ester, 6-(2-furyl)-6-methyl-1-hepten-3-one, etc.; as the unsaturated compound having a tetrahydropyran skeleton, for example, (meth)acrylic acid (tetrahydropyran-2-yl)methyl ester, 2,6-dimethyl-8-(tetrahydropyran-2-yloxy)-oct-1-en-3-one, 2-( Tetrahydropyran-2-yl methacrylate, 1-(tetrahydropyran-2-yloxy)-butyl-3-en-2-one, etc.; as an unsaturated compound having a pyran skeleton, For example, 4-(1,4-dioxa-5- can be cited Generation-6-heptenyl)-6-methyl-2-pyrone' 4-(1,5-dioxa-6-oxo-7-octenyl)-6-methyl-2- Examples of the unsaturated compound which has a skeleton represented by the above formula (II) include, for example, polyethylene glycol mono(meth)acrylate having a polymerization degree of 2 to 10, and a polymerization degree of 2 to 10 Propylene glycol mono(meth)acrylate or the like; Examples of the other unsaturated compound include acrylonitrile, methacrylonitrile, acrylamide, methacrylamide, and the like. -18- 201033737 Among them, alkyl methacrylate, methacrylic acid cycloalkyl ester, cycloalkyl acrylate, maleic imine compound, unsaturated aromatic compound, and the above formula are preferably used. An unsaturated compound of a phenolic hydroxyl group represented by I), an unsaturated compound having a tetrahydrofuran skeleton, a furan skeleton, a tetrahydropyran skeleton, a ruthenium skeleton or a skeleton represented by the above formula (II), from copolymerization reactivity and alkali In terms of solubility of the aqueous solution, it is particularly preferred to use styrene, tert-butyl methacrylate, tricyclo[5.2.1.〇2,6]decane-8-yl ester, p-methoxy group. Styrene, 2-methylcyclohexyl acrylate, N_ ® phenyl maleimide, N-cyclohexylmaleimide, tetrahydrofurfuryl (meth) acrylate, polyethylene glycol (η = 2~10) mono(meth)acrylate, 3-(meth)acryloxytetrahydrofuran-2-one, 4-hydroxybenzyl (meth)acrylate, 4-hydroxyphenyl (meth)acrylate In the group consisting of o-hydroxystyrene, p-hydroxystyrene, and α-methyl-p-hydroxystyrene Less - kind. These compounds (a3) can be used singly or in combination. As a preferable specific example of the copolymer (A) used in the present invention, for example, methacrylic acid/trimethyl methacrylate [5.2.1.0''6] decane-8-yl ester / 2-methylcyclohexyl acrylate can be cited. Ester/glycidyl methacrylate/styrene copolymer, methacrylic acid/tetrahydrofurfuryl methacrylate/glycidyl methacrylate/N-cyclohexylmaleimide/dodecyl methacrylate Base ester / α-methyl-p-hydroxystyrene copolymer, styrene / methacrylic acid / glycidyl methacrylate / methacrylic acid (3-ethyloxetan-3-yl ester) / a tricyclo[5.2.1.02,6]decane-8-yl ester copolymer of methacrylic acid or the like. The polystyrene-equivalent weight average molecular weight (hereinafter referred to as "M w") measured by gel permeation chromatography of the copolymer (Α) used in the present invention is preferably -19-201033737 2xl 〇 3 to lxl 〇 5, more It is preferably 5xl03~5xl04. If the Mw is less than 2 Å, the development margin may be insufficient, and the resulting coating film ratio may be lowered, and the pattern shape and heat resistance of the obtained interlayer insulating film may be poor. On the other hand, if it exceeds lxlO5, the sensitivity 1 will appear and the pattern shape will deteriorate. Further, the molecular weight distribution (hereinafter, "Mw/Mn", wherein the Μη is a polystyrene-equivalent number average molecular weight for gel permeation of the copolymer (A)) is preferably 5.0 or less, and is 3.0 or less. If Mw/Mn exceeds 5.0, the pattern shape of the obtained layer film may be deteriorated. The radiation-sensitive resin containing the copolymer (A) as described above does not cause development residue during development, and the pre-pattern shape can be easily formed. The solvent to be used in the preparation of the copolymer (A) may, for example, be a glycol dialkyl ether, a propylene glycol alkyl ether acetate, a propylene glycol alkyl ether ester, a ketone or an alkoxy propionate. Ο As a specific example thereof, as the diethylene glycol dialkyl ether, for example, diglyme, diethylene glycol diethyl ether, or diethylene glycol ethyl methyl acid may be used as the propylene glycol alkyl ether acetate. For example, propylene glycol acetate, propylene glycol diethyl ether acetate, propylene glycol propyl ether acetate, and the like; and examples of the alkoxypropion acid ester include 3-methoxypropionic acid. Among them, preferred are diethylene glycol dialkyl ether, propylene glycol alkyl ether ethyl acetate alkoxy propionate, and particularly preferably diethylene glycol dimethyl ether, diethylene glycol methyl ether, propylene glycol diethyl ether acetate, propylene glycol. Methyl ether acetate, 3·1 03, the residual change: lower, called the better spectral composition, such as dipropionic acid enumeration; etc.: methyl ether methyl ester, ethyl - methoxy 20- 201033737 Methyl propionate. As the polymerization initiator used in the preparation of the copolymer (A), a polymerization initiator which is generally known as a radical polymerization initiator can be used. For example, 2,2'-azobisisobutyronitrile, 2,2'-azobis-(2,4-dimethylvaleronitrile), 2,2'-azobis-(4-methoxy) An azo compound such as benzyl-2,4·dimethylvaleronitrile. In the preparation of the copolymer (A), a molecular weight regulator for adjusting the molecular weight can also be used. Specific examples thereof include mercaptan such as n-hexyl mercaptan, n-octyl mercaptan, n-dodecyl mercaptan, tridodecyl mercaptan, and mercaptoacetic acid; dimethyl xanthone sulfide; diisopropyl Xanthene ketones such as ketone ketone disulfide; terpinolene, α-methyl styrene dimer, and the like. <Compound (Β)> The compound (Β) used in the present invention is a 1,2-quinonediazide compound capable of generating a carboxylic acid by irradiation with a ray, and a phenolic compound or an alcoholic compound (hereinafter referred to as " A condensate of a parent core ") with 1,2-naphthoquinonediazide sulfonium halide. Examples of the mother nucleus include trihydroxybenzophenone, tetrahydroxybenzophenone, pentahydroxybenzophenone, hexahydroxybenzophenone, and (polyhydroxyphenyl)alkane. Specific examples of the trihydroxybenzophenone include 2,3,4-trihydroxybenzophenone and 2,4,6-trihydroxybenzophenone; and tetrahydroxybenzophenone includes 2 , 2',4,4'-tetrahydroxybenzophenone, 2,3,4,3'-tetrahydroxybenzophenone, 2,3,4,4'-tetrahydroxybenzophenone, 2,3,4 , 2'-tetrahydroxy-4'-methylbenzophenone, 2,3,4,4'-tetrahydroxy-3'-methoxybenzophenone, etc.; -21- 201033737 as pentahydroxybenzophenone, For example, 2,3,4,2',6'-pentahydroxybenzophenone or the like can be mentioned; as the hexahydroxybenzophenone, for example, 2,4,6,3',4',5'-hexahydroxydi can be mentioned. Benzophenone, 3,4,5,3',4',5'-hexahydroxybenzophenone, etc.; (polyhydroxyphenyl) alkane, for example, bis(2,4-dihydroxyphenyl)methane, Di(p-hydroxyphenyl)methane, tris(p-hydroxyphenyl)methane, 1,1,1·tris(p-hydroxyphenyl)ethane, bis(2,3,4-trihydroxyphenyl)methane, 2 ,2-bis(2,3,4·trihydroxyphenyl)propane, 1,1,3-tris(2,5-dimethyl-4-hydroxyphenyl)-3-phenylpropane, 4,4 '-[1-[4-[1-[4-Hydroxyphenyl]-1- Ethylethyl]phenyl]ethylidene]bisphenol, bis(2,5-dimethyl-4-hydroxyphenyl)-2-hydroxyphenylmethane, 3,3,3',3'-tetra Base-1,1'-spirobisindole_5,6,7,5',6',7'-hexaol, 2,2,4-trimethyl-7,2',4'-trihydroxy yellow In addition to the above, a 1,2-naphthoquinonediazidesulfonamide such as 2,3,4-tri3, which is obtained by changing the ester bond of the parent core exemplified above to a guanamine bond, may be suitably used. Hydroxybenzophenone-1,2-naphthoquinonediazide-4-sulfonamide and the like. Among these cores, 2,3,4,4'-tetrahydroxybenzophenone, 4,4'-[1-[4-[1-[4-hydroxyphenyl]-1-methyl-B is preferred Phenyl]ethylidene]bisphenol. As the 1,2-naphthoquinonediazidesulfonium halide, 1,2-naphthoquinonediazidesulfonium chloride is preferred. As a specific example thereof, 1,2-naphthoquinonediazide-4- chlorobenzene and 1,2-naphthoquinone-5-sulfonyl chloride can be cited. Among them, hydrazine, 2 naphthoquinonediazide-5-sulfonyl chloride is preferably used. In the condensation reaction, a ruthenium equivalent to 30 to 85 mol%, more preferably 50 to 7 mol%, and 2 naphthoquinone-22-201033737 may be used with respect to the number of hydroxyl groups in the mother nucleus. Nitrosulfuronium halide. The condensation reaction can be carried out by a known method. These compounds (B) may be used alone or in combination of two or more. The use ratio of the compound (B) is preferably 5 to 100 parts by mass, more preferably 1 to 50 parts by mass, per part by mass of the (A) alkali-soluble resin. When the ratio is 5 to 100 parts by mass, the difference between the solubility of the irradiated portion and the unirradiated portion with respect to the aqueous alkali solution as the developing solution is large, so that the pattern is good, and the heat resistance and solvent resistance of the obtained interlayer insulating film are obtained. Good sex

<共聚物(C)> 本發明中的共聚物(C),是含有上述化合物(cl)、化合 物(c2)和化合物(c3)的聚合性不飽和化合物的共聚物,在本 發明的層間絕緣膜形成用的樹脂組成物中,作爲表面張力 降低性能高的表面活性劑而發揮作用,即使以小的比率使 用,也可以提髙塗膜的表面平滑性,因而’可以顯著提高 所形成的層間絕緣膜的膜厚均一性。 共聚物(C),較佳除了上述化合物(cl)、化合物(c2)和 化合物(c3)以外還含有(c4)具有碳原子數爲1〜8的院基的 聚合性不飽和化合物(以下稱爲“化合物(c4)”)的聚合性不 飽和化合物的共聚物,更佳爲除了上述化合物(c1)、化合 物(c2)、化合物(c3)和化合物(c4)以外還含有(c5)一分子中 具有兩個以上不飽和鍵的聚合性不飽和化合物(以下稱爲 “化合物(c 5),,)的聚合性不飽和化合物的共聚物’特佳爲由 上述化合物(cl)、化合物(c2)、化合物(c3)、化合物(c4)和 -23- 201033737 化合物(c5)組成的聚合物性不飽和化合物的共聚物。 上述式(1°)中的基團- CaH2tt-爲亞甲基、烷基亞甲基或 者直鏈狀或支鏈狀亞烷基,當基團- CaH2a•左右不對稱時, 其結合方向無所謂。基團-C„H2a-的碳原子數a較佳爲2〜4。 作爲基團-CaH2a-的具體例子,可以列舉例如1,2-伸乙基、 1,2-伸丙基、1,3-伸丙基、1,4-伸丁基等,其中較佳爲1,2-伸乙基或1,3-伸丙基,特佳爲1,2-伸乙基。 上述式(1°)中的基團CPF2P+1爲直鏈狀或支鏈狀氟代伸 W 烷基,其碳原子數β爲1〜2 0,較佳爲4~12,特佳爲8。基 團CPF2P+1較佳爲直鏈狀氟代亞烷基。 作爲本發明中的化合物(cl),較佳爲下述式(1)表示的 化合物, CH2 = CR1COO-CH2CH2C8Fi7 (1) (‘式(1)中,R1與上述式(1°)中定義相同)。 作爲其具體例子,可以列舉下述式(cl 一 1)和(Cl — 2) 各自表示的化合物。 參 CH2 = CHCO〇CH2CH2(CF2)7CF3 (cl - 1) CH2 = C(CH3)COOCH2CH2(CF2)7CF3 (cl - 2) 上述式(2°)中的基團-(:γΗ2γ-爲直鏈狀或支鏈狀的伸烷 基。當基團-ϋγΗ2γ•左右不對稱時,其結合方向無所謂。作 爲基團-(:γΗ2γ-的具體例子,可以列舉例如1,2-伸乙基和 1,2-伸丙基,較佳爲1,2-伸乙基。 化合物(c2)可以使用上述通式(2°)中重複單元數a的値 不同的化合物的混合物。a的平均數値爲1~30,較佳爲 -24- 201033737 2~20,特佳爲4~12。該a的値可以由對化合物(c2)採用凝 膠滲透色譜測定的聚苯乙烯換算的數均分子量通過計算而 求出。 作爲本發明中的化合物(c2),較佳爲下述式(2)表示的 化合物。 CH2 = CR2C00-(C2H40)aR3 (2) 式(2)中,R2和R3分別與上述式(2°)中的定義相同,重 複單元數a的平均數値爲4~12。 Φ 作爲這種化合物(c2),可以應用市售品,作爲其例子, 可以列舉例如新中村化學工業(股)生產的NK— ester Μ — 40G、Μ - 90G、AM — 90G ;日油(股)生產的 B lemmer — PME 一 200、PME - 400、PME- 5 5 0 等。 在上述通式(3)中,當R5和R6各自存在多個時,各R5 可以相同’也可以不同,各R6可以相同,也可以不同。另 外’在上述通式(4)中,當Ri〇和Rii各自存在多個時,各 R1Q可以相同’也可以不同,各R11可以相同,也可以不同。 作爲上述化合物(c3),較佳爲上述式(3)中的R4、R5和 R6各自爲碳原子數爲1〜20的烷基或苯基,且…和R8各自 具有上述式(4)表示的基團的聚合性不飽和化合物。作爲化 合物(c3),較佳爲下述通式((;3 — 1}表示的化合物。<Copolymer (C)> The copolymer (C) in the present invention is a copolymer of a polymerizable unsaturated compound containing the above compound (cl), compound (c2) and compound (c3), and is in the present invention. The resin composition for forming an interlayer insulating film functions as a surfactant having a high surface tension reducing performance, and even if used at a small ratio, the surface smoothness of the coating film can be improved, so that the formation can be remarkably improved. The film thickness uniformity of the interlayer insulating film. The copolymer (C) preferably contains (c4) a polymerizable unsaturated compound having a group having 1 to 8 carbon atoms in addition to the above compound (cl), compound (c2) and compound (c3) (hereinafter referred to as More preferably, the copolymer of the polymerizable unsaturated compound of the "compound (c4)") contains (c5) a molecule in addition to the above compound (c1), compound (c2), compound (c3) and compound (c4). A copolymer of a polymerizable unsaturated compound having two or more unsaturated bonds (hereinafter referred to as "compound (c 5),)) is particularly preferably a compound (cl) or a compound (c2) a copolymer of a polymerizable unsaturated compound composed of the compound (c3), the compound (c4), and -23-201033737 compound (c5). The group in the above formula (1°) - CaH2tt- is a methylene group or an alkane a methylidene group or a linear or branched alkylene group, when the group -CaH2a• is asymmetric, the bonding direction does not matter. The number of carbon atoms a of the group -C„H2a- is preferably 2 to 4 . Specific examples of the group -CaH2a- include, for example, 1,2-extended ethyl group, 1,2-propanyl group, 1,3-propanyl group, 1,4-tert-butyl group, and the like. 1,2-extended ethyl or 1,3-propanyl, particularly preferably 1,2-extended ethyl. The group CPF2P+1 in the above formula (1°) is a linear or branched fluoro-extension W alkyl group having a carbon number β of from 1 to 2 0, preferably from 4 to 12, particularly preferably 8 . The group CPF2P+1 is preferably a linear fluoroalkylene group. The compound (cl) in the present invention is preferably a compound represented by the following formula (1), CH2 = CR1COO-CH2CH2C8Fi7 (1) (In the formula (1), R1 is the same as defined in the above formula (1°) ). Specific examples thereof include compounds represented by the following formulas (cl-1) and (Cl-2). Reference CH2 = CHCO〇CH2CH2(CF2)7CF3 (cl - 1) CH2 = C(CH3)COOCH2CH2(CF2)7CF3 (cl - 2) The group in the above formula (2°)-(:γΗ2γ- is linear Or a branched alkyl group. When the group -ϋγΗ2γ• is asymmetric, the direction of bonding does not matter. As a specific example of the group -(:γΗ2γ-, for example, 1,2-extended ethyl and 1, 2-propyl group, preferably 1,2-extended ethyl group. The compound (c2) may be a mixture of compounds having a repeating number of units a in the above formula (2°). The average number of a is 1 ~30, preferably -24-201033737 2~20, particularly preferably 4~12. The enthalpy of a can be calculated by calculating the polystyrene-equivalent number average molecular weight of the compound (c2) by gel permeation chromatography. The compound (c2) in the present invention is preferably a compound represented by the following formula (2): CH2 = CR2C00-(C2H40)aR3 (2) In the formula (2), R2 and R3 are respectively the above formula The definition in (2°) is the same, and the average number 重复 of the number of repeating units a is 4 to 12. Φ As such a compound (c2), a commercially available product can be applied, and as an example thereof, for example, Shin-Nakamura NK-ester Μ - 40G, Μ - 90G, AM - 90G produced by Industrial Co., Ltd.; B lemmer - PME-200, PME-400, PME- 5 5 0, etc. produced by Nippon Oil Co., Ltd. In the formula (3), when R5 and R6 are each present in plurality, each R5 may be the same 'may be different, and each R6 may be the same or different. In addition, in the above formula (4), when Ri and Rii When there are a plurality of R1Q, each R1Q may be the same 'may be different', and each R11 may be the same or different. As the compound (c3), it is preferred that each of R4, R5 and R6 in the above formula (3) is a carbon atom. A polymerizable unsaturated compound having an alkyl group or a phenyl group of 1 to 20, and each of which has a group represented by the above formula (4), and R8 is preferably a compound of the following formula (c; Compound represented by 3 — 1}.

Rsi 2)d Η (c c=o ο R12 I C=CH2 (C3-1 ) -25- 201033737 (式(c3-l)中,RSi爲上述通式(3)表示的基團,R12爲 氫原子或甲基,d爲1〜3的整數。作爲化合物(C3)的更具體 的例子,可以列舉下述通式(c3 — 1-1)〜(c3 — 1-3)各自表 示的化合物,Rsi 2)d Η (cc=o ο R12 IC=CH2 (C3-1 ) -25- 201033737 (In the formula (c3-l), RSi is a group represented by the above formula (3), and R12 is a hydrogen atom or The methyl group, d is an integer of 1 to 3. Specific examples of the compound (C3) include compounds represented by the following general formulae (c3 to 1-1) to (c3 to 1-3).

-26- 201033737-26- 201033737

ΗΗ

I C—C=CH〇I C—C=CH〇

II o (C3-1-2 )II o (C3-1-2)

(上式中,Me爲甲基,Ph爲苯基,r、s和t各自爲0~3 的整數)。 作爲上述化合物(c4),可以列舉例如具有碳原子數爲 1〜8的烷基的(甲基)丙烯酸烷基酯,具體地,可以列舉例如 甲基丙烯酸甲酯、丙烯酸2 -乙基己基酯等。作爲上述化合 物(c5)的具體例子,可以列舉例如丁二醇的兩末端進行甲 -27- 201033737(In the above formula, Me is a methyl group, Ph is a phenyl group, and r, s, and t are each an integer of 0 to 3). The compound (c4) may, for example, be an alkyl (meth)acrylate having an alkyl group having 1 to 8 carbon atoms, and specific examples thereof include methyl methacrylate and 2-ethylhexyl acrylate. Wait. Specific examples of the above compound (c5) include, for example, both ends of butanediol for carrying out A-27-201033737

基丙烯酸酯化的化合物,可以列舉聚合度爲1〜20的聚乙二 醇、聚合度爲1〜20的聚丙二醇等。作爲上述化合物(c5), 可以應用市售品’作爲其具體例子’可以列舉例如新中村 化學工業(股)社生產的 NK ester 1G、NK ester 2G、NK ester 3G、NK ester 4G、NK ester 9G、NK ester 14G、NK ester 23G 等。 本發明中的共聚物(C)爲含有如上所述的化合物(cl)、 化合物(c2)和化合物(c3)的聚合性不飽和化合物的共聚 © 物。這裏,相對於聚合性不飽和化合物的總量,各化合物 的使用比率,對於化合物(cl),爲10〜55重量% ’對於化合 物(c2),爲10-50重量%,對於化合物(c3),爲.5〜45重量%。 共聚物(C)較佳爲除了化合物(cl)、化合物(c2)和化合 物(c3)以外還含有化合物(c4)的聚合性不飽和化合物的共 聚物。此時,相對於聚合性不飽和化合物的總量’各化合 物的使用比率,對於化合物(cl),爲20〜50重量%’對於化 合物(c2),爲15〜4 0重量%,對於化合物(c3)’爲10〜30重 ® 量%,對於化合物(c4)’爲20〜35重量%。共聚物(C)’更佳 爲除了化合物(cl)、化合物(c2)、化合物(c3)、化合物(c4) 以外還含有化合物(c5)的聚合性不飽和化合物的共聚物’ 特佳爲由化合物(cl)、化合物(c2)、化合物(c3)、化合物(c4) 和化合物(c5)組成的聚合性不飽和化合物的共聚物。此 時,相對於聚合性不飽和化合物的總量,各化合物的使用 比率,對於化合物(cl),爲25~35重量%,對於化合物(c2) ’ 爲20〜30重量%,對於化合物(c3),爲15〜20重量%,對於 -28- 201033737 化合物(c4),爲25〜35重量%,並且對於化合物(C5),爲1~5 重量%。 共聚物(C)的重量平均分子量(Mw)較佳爲 5 000〜25000,更佳爲 1 0000〜25 000,特佳爲 1 5000〜25 000。 共聚物(C)的分子量分佈Mw/Mn較佳爲1〜10,更佳爲2~4。 關於這種共聚物(C)的製備方法,沒有特別的限制,可 以根據已知的方法例如自由基聚合法、陽離子聚合法、陰 離子聚合法等的聚合機制,採用溶液聚合法、本體聚合法、 © 乳液聚合法等進行製備,而溶液中自由基聚合法由於簡 便,因而在工業上是較佳的。 作爲製備共聚物(C)時所用的聚合引發劑,可以列舉例 如過氧化苯甲醯、過氧化二醯等過氧化物;偶氮二異丁腈、 苯基偶氮三苯基甲烷等偶氮化合物等。 共聚物(C)的製備,可以在溶劑存在或不存在的任一條 件下進行,從操作性角度出發,較佳在溶劑的存在下進行。 作爲上述溶劑,可以列舉例如醇、酮、酯、單羧酸的烷基 Φ 酯、極性溶劑、醚、丙二醇及其酯、鹵代烴、芳香族烴、 氟化惰性液體等。作爲上述醇,可以列舉例如乙醇、異丙 醇、正丁醇、異丁醇、第三丁醇等; 作爲上述酮,可以列舉例如丙酮、甲基乙基酮、甲基 異丁基酮、甲基氨基酮等;作爲上述酯,可以列舉例如乙 酸甲酯、乙酸乙酯、乙酸丁酯、乳酸甲酯、乳酸乙酯、乳 酸丁酯等; 作爲上述單羧酸的烷基酯,可以列舉例如2 -羥基丙酸 -29- 201033737 甲酯、2-羥基丙酸乙酯、2-羥基丙酸丙酯、2-羥基丙酸丁酯、 2-甲氧基丙酸甲酯、2-甲氧基丙酸乙酯、2-甲氧基丙酸丙 酯、2-甲氧基丙酸丁酯等; 作爲上述極性溶劑,可以列舉例如二甲基甲醯胺、二 甲基亞颯、N-甲基吡咯烷酮等; 作爲上述醚,可以列舉例如甲基溶纖劑、溶纖劑、丁 基溶纖劑、丁基卡必醇、乙基溶纖劑乙酸酯、四氫呋喃、 二氧六環等;作爲上述丙二醇及其酯,可以列舉例如丙二 ® 醇、丙二醇單甲醚、丙二醇單甲醚乙酸酯、丙二醇單乙醚 乙酸酯、丙二醇單丁醚乙酸酯等; 作爲上述鹵代烴,可以列舉例如1,1,1 -三氯乙烷、氯 仿等; 作爲上述芳香族烴,可以列舉例如苯、甲苯、二甲苯 等;作爲上述氟化惰性液體,可以列舉例如全氟辛烷、全 氟三正丁基胺等,使用它們當中的任一者均可。 在製備共聚物(C)時,還可以進一步根據需要,使用十 Φ 二烷硫醇、2-锍基乙醇、锍基乙酸乙酯、锍基乙酸辛酯等 鏈轉移劑。 本發明感放射線性樹脂組成物中,共聚物(C)的使用比 率,相對於100質量份(A)鹼可溶性樹脂,較佳爲0.01〜3 質量份,更佳爲0.05 ~2質量份。這裏,若共聚物(C)的使 用比率爲0.01〜3質量份,則採用縫模塗布法進行塗布而形 成的塗膜的模厚均一性良好。若該値超過3質量份,會出 現塗膜容易發生膜龜裂的情況,並且會出現所形成的層間 -30- 201033737 絕緣膜的膜厚均一性受損害的情況。 <其他成分> 本發明的感放射線性樹脂組成物含有如上所述的共聚 物(A)、化合物(B)和共聚物(C)作爲必需成分,而根據需 要,還可以進一步含有(D)熱敏性產酸化合物、(E)含有至 少1個乙烯性不飽和雙鍵的聚合性化合物(以下稱爲“(E)成 分”)、(F)共聚物(A)以外的環氧樹脂(以下稱爲“(F)成分”)、 (G)黏合助劑、(H)自由基捕獲劑等。 m [(D)熱敏性產酸化合物] 上述(D)熱敏性産酸化合物是通過加熱產生酸的化合 物,其可以是爲了提高耐熱性和硬度而含於本發明感放射 線性樹脂組成物中。作爲其具體例子,可以列舉鏑鹽、苯 并噻唑鑰鹽、銨鹽、鱗鹽等鑰鹽。 作爲上述毓鹽的具體例子,可以列舉烷基毓鹽、苄基 锍鹽、二苄基锍鹽、取代的苄基锍鹽等。 _ 其中,較佳使用锍鹽和苯并唾唑鑰鹽,特別優選使用 4-乙醯氧基苯基二甲基鏑六氟砷酸鹽、苄基-4-羥基苯基甲 基鏑六氟磷酸鹽、苄基-4-羥基苯基甲基锍六氟銻酸鹽、4- 乙醯氧基苯基苄基甲基鏑六氟銻酸鹽、二苄基-4-羥基苯基 0 锍六氟銻酸鹽、4-乙醯氧基苯基苄基锍六氟銻酸鹽、3-苄 基苯并噻唑鑰六氟銻酸鹽。 作爲它們的市售品’可以列舉SunaidSI— L85、Sunaid SI—L110、SunaidSI — L145、SunaidSI — L150、SunaidSI —L160(三新化學工業(股)生產)等》 -31- 201033737 (D)熱敏性產酸化合物的使用比率,相對於100質量份 (A)鹼可溶性樹脂,較佳爲0.1~10質量份,更佳爲〇.5~5 質量份。當該用量爲〇.1~1〇質量份時,在塗膜形成步驟中 不會析出析出物,能夠形成具有良好硬度的層間絕緣膜。 [(E)成分] 作爲上述(E)成分的具有至少一個乙烯性不飽和雙鍵 的聚合性化合物,可以使用例如單官能(甲基)丙烯酸酯、 雙官能(甲基)丙烯酸酯、三官能以上的(甲基)丙烯酸酯等。 ^ 作爲上述單官能(甲基)丙烯酸酯,可以列舉例如2-(甲 基)丙烯醯氧基乙基-2-羥基丙基丁酸酯等。作爲其市售品, 可以列舉例如 Aronix M — 101、Aronix M — 111、Aronix Μ —114(以上由東亞合成(股)生產);KAYARAD TC — 110S、 KAY ARAD TC - 120S(以上由日本化藥(股)生產);Viscoat 158、Viscoat 23 1 1(以上由大阪有機化學工業(股)生產)等。 作爲上述雙官能(甲基)丙烯酸酯,可以列舉例如乙二 ©醇二(甲基)丙烯酸酯、1,6-己二醇二(甲基)丙烯酸酯、1,9· 壬二醇二(甲基)丙烯酸酯、聚丙二醇二(甲基)丙烯酸酯、四 甘醇二(甲基)丙烯酸酯、雙(苯氧基乙醇)芴二(甲基)丙烯酸 醋等。作爲它們的市售品,可以列舉例如Aronix Μ - 210、 Aronix Μ — 240、Aronix Μ - 6200(以上由東亞合成(股)生 產);KAYARAD HDDA、KAYARAD HX— 220、KAYARAD R 一 604(以上由日本化藥(股)生產);Viscoat 260、Viscoat 3 12、Viscoat 3 3 5 HP(以上由大阪有機化學工業(股)生產)等。 作爲上述三官能以上的(甲基)丙烯酸酯,可以列舉例 -32- 201033737 如三羥甲基丙烷三(甲基)丙烯酸酯、季戊四醇三(甲基)丙烯 酸酯、三((甲基)丙烯醯氧基乙基)膦酸酯、季戊四醇四(甲 基)丙烯酸酯、二季戊四醇五(甲基)丙烯酸酯、二季戊四醇 六(甲基)丙烯酸酯等。作爲其市售品,可以列舉例如Aronix Μ — 309、Aronix Μ — 400、Aronix Μ — 405、Aronix Μ — 450、 Aronix Μ— 7100、Aronix Μ— 8030、Aronix Μ— 8060、(以 上由東亞合成(股)生產);KAYARAD TMPTA、KAYARAD DPHA、KAYARAD DPCA- 20、KAYARAD DPCA- 30、 KAYARAD DPCA— 60、KAYARAD DPCA- 120(以上由日本 化藥(股)生產);Viscoat 295、Viscoat 300、Viscoat 3 60、 Viscoat GPT、Viscoat 3PA、Viscoat 400(以上由大阪有機 化學工業(股)生產)等。 它們當中,較佳使用3官能以上的(甲基)丙烯酸酯, 其中特佳爲三羥甲基丙烷三(甲基)丙烯酸酯、季戊四醇四 (甲基)丙烯酸酯、二季戊四醇六(甲基)丙烯酸酯。 這些單官能、雙官能或3官能以上的(甲基)丙烯酸酯 可以單獨或組合使用。(E)成分的使用比率,相對於100質 量份(A)鹼可溶性樹脂,較佳爲50質量份以下,更佳爲1〜50 質量份,再更佳爲3~30質量份。當(E)成分的使用比率爲 1~50質量份時,可以進一步提高所得層間絕緣膜的耐熱性 和表面硬度等。 [(F)成分] 作爲上述(F)成分的共聚物(A)以外的環氧樹脂,是具 有環氧基(較佳爲環氧乙基)的樹脂,並且只要其對本發明 -33- 201033737 感放射線性樹脂組成物中所含的其他成分的相容性沒有影 響’則沒有限制。作爲較佳的(F)成分,可以列舉例如雙酚 A型環氧樹脂、苯酚酚醛型環氧樹脂、甲酚酚醛型環氧樹 脂、環狀脂肪族環氧樹脂、縮水甘油酯型環氧樹脂、縮水 甘油基胺型環氧樹脂、雜環式環氧樹脂、與甲基丙烯酸縮 水甘油酯(共)聚合而得的樹脂等。其中,特佳爲雙酚A型 環氧樹脂、甲酚酚醛型環氧樹脂、縮水甘油酯型環氧樹脂 等。 (F)成分的使用比率,相對於100質量份(A)鹼可溶性 樹脂,較佳爲30質量份以下,更佳爲1~30質量份。通過 以1〜3 0質量份的比率含有(F)成分,可以進一步提高層間 絕緣膜的耐熱性和表面硬度等。 另外,共聚物(A)也可以稱鳥“環氧樹脂”,但是共聚物 (A)在具有鹼可溶性方面與(F)成分不同。(F)成分爲鹼不溶 性的。 [(G)黏合助劑] 在本發明的感放射線性樹脂組成物中,爲了進一步提 高與基板的黏合性,還可以使用(G)黏合助劑。作爲這種(G) 黏合助劑,較佳使用官能性矽烷偶合劑,可以列舉例如具 有羧基、甲基丙烯醯基、異氰酸酯基、環氧基(較佳爲環氧 乙基)等反應性取代基的官能性矽烷偶合劑。具體地’可以 列舉例如三甲氧基矽烷基苯甲酸、γ-甲基丙烯醯氧基丙基 三甲氧基矽烷、乙烯基三乙醯氧基矽烷、乙烯基三甲氧基 矽烷、γ-異氰酸酯丙基三乙氧基矽烷、γ-環氧丙氧基丙基 -34- 201033737 二甲氧基砂院、β-(3,4-環氧環己基)乙基三甲氧基砍院等。 這種(G)黏合助劑,相對於1〇〇質量份(a)鹼可溶性樹 脂’較佳以20質量份以下,更較佳ido質量份、進一步 優選3~ 15質量份的量進行使用。當(G)黏合助劑的使用比 率爲1〜2 0質量份時,與基板的黏合性最好。 [(H)自由基捕獲劑] 上述(H)自由基捕獲劑,可以是爲了進—步提高所得感 放射線性樹脂組成物的保存穩定性,同時使所形成的層間 Ο 絕緣膜的膜厚更加均一的目的而使用。作爲這種(H)自由基 捕獲劑,可以使用例如受阻酚化合物、受阻胺化合物、烷 基膦酸酯、含硫原子化合物(其中烷基膦酸酯化合物除外) 等。 作爲其具體例子,作爲上述受阻酚化合物,可以列舉 例如季戊四醇四[3-(3,5-二第三丁基-4-羥基苯基)丙酸 酯]、硫二伸乙基二[3-(3,5-二第三丁基-4-羥基苯基)丙酸 酯]、十八烷基-3-(3,5-二第三丁基-4-羥基苯基)丙酸酯、 Ο W 1,3,5-三甲基-2,4,6-三(3,5-二第三丁基-4-羥基苄基)苯、 1:^-己烷-1,6-二基二[3-(3,5-二-第三丁基-4-羥基苯基丙 酸醯胺)]、3,3’,3’’,5’,5’’-五第三丁基-(»,〇1’,(1’’-(均三甲苯 -2,4-三基)三對甲酚、4,6-二(辛硫基甲基)-鄰甲酚、4,6-二 (十二烷硫基甲基)-鄰甲酚、伸乙基二(氧伸乙基)二[3-(5-第三丁基-4-羥基-間甲苯基)丙酸酯]、伸己基二[3-(3,5-二 第三丁基-4-經基苯基)丙酸酯]、1,3,5 -三(3,5 -二第三丁基 -4-羥基苄基)-1,3,5-三阱-2,4,6-(1Η,3Η,5Η)-三酮、1,3,5-三 -35- 201033737 • .The acrylated compound may, for example, be a polyethylene glycol having a polymerization degree of from 1 to 20, a polypropylene glycol having a polymerization degree of from 1 to 20, or the like. As the above-mentioned compound (c5), a commercially available product 'as a specific example thereof' can be used, for example, NK ester 1G, NK ester 2G, NK ester 3G, NK ester 4G, NK ester 9G produced by Shin-Nakamura Chemical Industry Co., Ltd. , NK ester 14G, NK ester 23G, etc. The copolymer (C) in the present invention is a copolymerized product of a polymerizable unsaturated compound containing the compound (cl), the compound (c2) and the compound (c3) as described above. Here, the use ratio of each compound with respect to the total amount of the polymerizable unsaturated compound is 10 to 55 wt% for the compound (cl) and 10 to 50 wt% for the compound (c2), for the compound (c3) , is .5 to 45 wt%. The copolymer (C) is preferably a copolymer of a polymerizable unsaturated compound containing the compound (c4) in addition to the compound (cl), the compound (c2) and the compound (c3). In this case, the use ratio of each compound with respect to the total amount of the polymerizable unsaturated compound is 20 to 50% by weight for the compound (cl) and 15 to 40% by weight for the compound (c2), for the compound ( C3) 'is 10 to 30% by weight, and for compound (c4)' is 20 to 35% by weight. The copolymer (C)' is more preferably a copolymer of a polymerizable unsaturated compound containing a compound (c5) in addition to the compound (cl), the compound (c2), the compound (c3), and the compound (c4). A copolymer of a polymerizable unsaturated compound composed of a compound (cl), a compound (c2), a compound (c3), a compound (c4) and a compound (c5). In this case, the use ratio of each compound is 25 to 35 wt% with respect to the compound (cl) and 20 to 30 wt% with respect to the compound (c2) with respect to the total amount of the polymerizable unsaturated compound, for the compound (c3) It is 15 to 20% by weight, 25 to 35% by weight for the compound (c4) of -28 to 201033737, and 1 to 5% by weight for the compound (C5). The weight average molecular weight (Mw) of the copolymer (C) is preferably from 5,000 to 25,000, more preferably from 1,000,000 to 25,000, particularly preferably from 15,000 to 25,000. The molecular weight distribution Mw/Mn of the copolymer (C) is preferably from 1 to 10, more preferably from 2 to 4. The preparation method of such a copolymer (C) is not particularly limited, and a solution polymerization method, a bulk polymerization method, or the like can be employed according to a known polymerization method such as a radical polymerization method, a cationic polymerization method, an anionic polymerization method, or the like. The preparation is carried out by an emulsion polymerization method or the like, and the radical polymerization method in the solution is industrially preferable because of its simplicity. The polymerization initiator to be used in the preparation of the copolymer (C) may, for example, be a peroxide such as benzamidine peroxide or bismuth peroxide; or an azo such as azobisisobutyronitrile or phenylazotriphenylmethane. Compounds, etc. The preparation of the copolymer (C) can be carried out in any of the presence or absence of a solvent, and is preferably carried out in the presence of a solvent from the viewpoint of workability. Examples of the solvent include an alcohol, a ketone, an ester, an alkyl Φ ester of a monocarboxylic acid, a polar solvent, an ether, propylene glycol and an ester thereof, a halogenated hydrocarbon, an aromatic hydrocarbon, and a fluorinated inert liquid. Examples of the alcohol include ethanol, isopropanol, n-butanol, isobutanol, and third butanol. Examples of the ketone include acetone, methyl ethyl ketone, methyl isobutyl ketone, and methyl alcohol. Examples of the ester include methyl acetate, ethyl acetate, butyl acetate, methyl lactate, ethyl lactate, and butyl lactate. Examples of the alkyl ester of the monocarboxylic acid include, for example, alkyl esters. 2-hydroxypropionic acid -29- 201033737 Methyl ester, ethyl 2-hydroxypropionate, propyl 2-hydroxypropionate, butyl 2-hydroxypropionate, methyl 2-methoxypropionate, 2-methoxy Ethyl propyl propionate, propyl 2-methoxypropionate, butyl 2-methoxypropionate, etc.; as the above polar solvent, for example, dimethylformamide, dimethyl hydrazine, N- Methylpyrrolidone or the like; examples of the ether include methyl cellosolve, cellosolve, butyl cellosolve, butyl carbitol, ethyl cellosolve acetate, tetrahydrofuran, dioxane, and the like; Examples of the propylene glycol and the ester thereof include, for example, propylene glycol, propylene glycol monomethyl ether, and propylene glycol monomethyl ether acetate. The ester, propylene glycol monoethyl ether acetate, propylene glycol monobutyl ether acetate, etc., and the halogenated hydrocarbon may, for example, be 1,1,1-trichloroethane or chloroform; and the aromatic hydrocarbon may, for example, be mentioned. Benzene, toluene, xylene, etc., and examples of the fluorinated inert liquid include perfluorooctane and perfluorotri-n-butylamine, and any of them may be used. In the preparation of the copolymer (C), a chain transfer agent such as decanedithiol, 2-mercaptoethanol, ethyl decylacetate or octyl thioglycolate may be further used as needed. In the radiation sensitive resin composition of the present invention, the use ratio of the copolymer (C) is preferably 0.01 to 3 parts by mass, more preferably 0.05 to 2 parts by mass, per 100 parts by mass of the (A) alkali-soluble resin. Here, when the copolymer (C) is used in a ratio of 0.01 to 3 parts by mass, the coating film formed by the slit die coating method has a good mold thickness uniformity. If the cerium exceeds 3 parts by mass, a film crack is likely to occur in the coating film, and the film thickness uniformity of the formed interlayer -30-201033737 may be impaired. <Other components> The radiation sensitive resin composition of the present invention contains the copolymer (A), the compound (B) and the copolymer (C) as described above as essential components, and may further contain (D if necessary) a heat-sensitive acid generating compound, (E) a polymerizable compound containing at least one ethylenically unsaturated double bond (hereinafter referred to as "(E) component"), and (F) an epoxy resin other than the copolymer (A) (hereinafter) It is called "(F) component"), (G) adhesion aid, (H) radical trapping agent, etc. m [(D) heat-sensitive acid generating compound] The (D) heat-sensitive acid generating compound is a compound which generates an acid by heating, and may be contained in the radiation sensitive resin composition of the present invention in order to improve heat resistance and hardness. Specific examples thereof include key salts such as an onium salt, a benzothiazole key salt, an ammonium salt, and a scale salt. Specific examples of the onium salt include an alkyl phosphonium salt, a benzyl phosphonium salt, a dibenzyl phosphonium salt, and a substituted benzyl phosphonium salt. Among them, an onium salt and a benzoxadiazole salt are preferably used, and 4-ethyloxyphenyl dimethyl hexafluoroarsenate, benzyl-4-hydroxyphenylmethyl hexafluorophosphate is particularly preferably used. Phosphate, benzyl-4-hydroxyphenylmethylphosphonium hexafluoroantimonate, 4-ethoxycarbonylphenylbenzylmethylphosphonium hexafluoroantimonate, dibenzyl-4-hydroxyphenyl 0 oxime Hexafluoroantimonate, 4-acetoxyphenylbenzyl hexafluoroantimonate, 3-benzylbenzothiazole hexafluoroantimonate. As their commercial products, 'SunaidSI-L85, Sunaid SI-L110, SunaidSI-L145, SunaidSI-L150, SunaidSI-L160 (Sanxin Chemical Industry Co., Ltd.), etc. - 31-201033737 (D) heat-sensitive production The use ratio of the acid compound is preferably 0.1 to 10 parts by mass, more preferably 5 to 5 parts by mass, per 100 parts by mass of the (A) alkali-soluble resin. When the amount is in the range of 0.1 to 1 part by mass, precipitates are not precipitated in the coating film forming step, and an interlayer insulating film having good hardness can be formed. [Component (E)] As the polymerizable compound having at least one ethylenically unsaturated double bond as the component (E), for example, a monofunctional (meth) acrylate, a difunctional (meth) acrylate, or a trifunctional group can be used. The above (meth) acrylate or the like. ^ The above-mentioned monofunctional (meth) acrylate may, for example, be 2-(methyl)propenyloxyethyl-2-hydroxypropylbutyrate or the like. As a commercial product thereof, for example, Aronix M-101, Aronix M-111, Aronix®-114 (above produced by East Asia Synthetic Co., Ltd.); KAYARAD TC-110S, KAY ARAD TC-120S (above by Japanese chemical) (Stock) production); Viscoat 158, Viscoat 23 1 1 (above produced by Osaka Organic Chemical Industry Co., Ltd.), etc. Examples of the above difunctional (meth) acrylate include ethylene bisphenol (meth) acrylate, 1,6-hexane diol di(meth) acrylate, and 1,9 decylene diol ( Methyl) acrylate, polypropylene glycol di(meth) acrylate, tetraethylene glycol di(meth) acrylate, bis(phenoxyethanol) quinone di(meth) acrylate vinegar, and the like. As their commercial products, for example, Aronix®-210, Aronix®-240, Aronix®-6200 (above produced by East Asia Synthetic Co., Ltd.); KAYARAD HDDA, KAYARAD HX-220, KAYARAD R-604 (above) Nissan Chemical Co., Ltd.); Viscoat 260, Viscoat 3 12, Viscoat 3 3 5 HP (above produced by Osaka Organic Chemical Industry Co., Ltd.), etc. Examples of the above trifunctional or higher (meth) acrylate include -32-201033737 such as trimethylolpropane tri(meth)acrylate, pentaerythritol tri(meth)acrylate, and tris((meth)propene).醯 oxyethyl) phosphonate, pentaerythritol tetra (meth) acrylate, dipentaerythritol penta (meth) acrylate, dipentaerythritol hexa (meth) acrylate, and the like. As its commercial products, for example, Aronix®-309, Aronix®-400, Aronix®-405, Aronix®-450, Aronix®-7100, Aronix®-8030, Aronix®-8060, (the above is synthesized by East Asia) (production)); KAYARAD TMPTA, KAYARAD DPHA, KAYARAD DPCA-20, KAYARAD DPCA-30, KAYARAD DPCA-60, KAYARAD DPCA-120 (above produced by Nippon Kayaku Co., Ltd.); Viscoat 295, Viscoat 300, Viscoat 3 60, Viscoat GPT, Viscoat 3PA, Viscoat 400 (above produced by Osaka Organic Chemical Industry Co., Ltd.). Among them, a trifunctional or higher (meth) acrylate is preferably used, and among them, trimethylolpropane tri(meth)acrylate, pentaerythritol tetra(meth)acrylate, dipentaerythritol hexa(methyl) are particularly preferred. Acrylate. These monofunctional, difunctional or trifunctional or higher (meth) acrylates may be used singly or in combination. The use ratio of the component (E) is preferably 50 parts by mass or less, more preferably 1 to 50 parts by mass, still more preferably 3 to 30 parts by mass, per 100 parts by mass of the (A) alkali-soluble resin. When the use ratio of the component (E) is from 1 to 50 parts by mass, the heat resistance, surface hardness and the like of the obtained interlayer insulating film can be further improved. [Component (F)] The epoxy resin other than the copolymer (A) as the component (F) is a resin having an epoxy group (preferably an epoxy group), and as long as it is to the present invention -33 - 201033737 There is no limitation on the compatibility of the other components contained in the radiation sensitive resin composition. Preferred examples of the component (F) include bisphenol A epoxy resin, phenol novolak epoxy resin, cresol novolac epoxy resin, cyclic aliphatic epoxy resin, and glycidyl ester epoxy resin. A glycidylamine type epoxy resin, a heterocyclic epoxy resin, a resin obtained by (co)polymerization with glycidyl methacrylate, and the like. Among them, a bisphenol A type epoxy resin, a cresol novolac type epoxy resin, a glycidyl ester type epoxy resin, and the like are particularly preferable. The use ratio of the component (F) is preferably 30 parts by mass or less, more preferably 1 to 30 parts by mass, per 100 parts by mass of the (A) alkali-soluble resin. By containing the component (F) in a ratio of 1 to 30 parts by mass, the heat resistance and surface hardness of the interlayer insulating film can be further improved. Further, the copolymer (A) may also be referred to as a bird "epoxy resin", but the copolymer (A) is different from the component (F) in terms of alkali solubility. The component (F) is alkali-insoluble. [(G) Adhesive Aid] In the radiation sensitive resin composition of the present invention, in order to further improve the adhesion to the substrate, (G) an adhesion aid may be used. As such a (G) binder, a functional decane coupling agent is preferably used, and examples thereof include a reactive substituent such as a carboxyl group, a methacryl group, an isocyanate group or an epoxy group (preferably an epoxy group). a functional decane coupling agent. Specifically, for example, trimethoxydecyl benzoic acid, γ-methyl propylene methoxy propyl trimethoxy decane, vinyl triethoxy decane, vinyl trimethoxy decane, γ-isocyanate propyl may be mentioned. Triethoxy decane, γ-glycidoxypropyl-34-201033737 dimethoxy sand, β-(3,4-epoxycyclohexyl)ethyltrimethoxy chopping, etc. The (G) adhesion aid is preferably used in an amount of 20 parts by mass or less, more preferably ido parts by mass, still more preferably 3 to 15 parts by mass, per part by mass of the (a) alkali-soluble resin. When the ratio of use of the (G) adhesion aid is from 1 to 20 parts by mass, the adhesion to the substrate is the best. [(H) radical scavenger] The (H) radical scavenger may be used to further improve the storage stability of the resulting radiation-sensitive resin composition and to increase the film thickness of the interlayer insulating film formed. Used for uniform purposes. As such a (H) radical scavenger, for example, a hindered phenol compound, a hindered amine compound, an alkylphosphonate, a sulfur atom-containing compound (excluding an alkylphosphonate compound), or the like can be used. As a specific example thereof, as the hindered phenol compound, for example, pentaerythritol tetrakis[3-(3,5-di-t-butyl-4-hydroxyphenyl)propionate], thiodiethylidene 2-[3- (3,5-di-t-butyl-4-hydroxyphenyl)propionate], octadecyl-3-(3,5-di-t-butyl-4-hydroxyphenyl)propionate, Ο W 1,3,5-trimethyl-2,4,6-tris(3,5-di-t-butyl-4-hydroxybenzyl)benzene, 1:^-hexane-1,6-di Bis[3-(3,5-di-t-butyl-4-hydroxyphenylpropionate decylamine)], 3,3',3'',5',5''-penta-t-butyl -(»,〇1',(1''-(mesitylene-2,4-triyl)tri-p-cresol, 4,6-di(octylthiomethyl)-o-cresol, 4,6 - bis(dodecylthiomethyl)-o-cresol, ethyl bis(oxyethyl) bis[3-(5-t-butyl-4-hydroxy-m-tolyl)propionate] , hexyl bis[3-(3,5-di-t-butyl-4-phenylphenyl)propionate], 1,3,5-tris(3,5-di-t-butyl-4- Hydroxybenzyl)-1,3,5-tritrap-2,4,6-(1Η,3Η,5Η)-trione, 1,3,5-tri-35- 201033737 • .

[(4-第三丁基-3 -羥基-2,6-二甲苯基)甲基]-1,3,5 -三阱 -2,4,6-(1Η,3Η,5Η)-三酮、2,6-二叔丁基-4-(4,6_二(辛硫 基)-1,3,5-三-2-基胺)苯酚、1,3,5-三(3’,5,-二第三丁基-4’- 羥基苄基)異氰尿酸等。[(4-Tertibutyl-3-hydroxy-2,6-dimethylphenyl)methyl]-1,3,5-tri-trap-2,4,6-(1Η,3Η,5Η)-trione 2,6-di-tert-butyl-4-(4,6-di(octylthio)-1,3,5-tri-2-ylamine)phenol, 1,3,5-tris (3', 5,-Di-tert-butyl-4'-hydroxybenzyl)isocyanuric acid and the like.

作爲其市售品,可以列舉例如ADK STAB AO — 20、ADK STAB AO- 30、ADK STAB AO- 40、ADK STAB AO- 50、As a commercial item thereof, for example, ADK STAB AO-20, ADK STAB AO-30, ADK STAB AO-40, ADK STAB AO-50,

ADK STAB AO- 60、ADK STAB AO- 70、ADK STAB AO —80、ADK STAB AO — 3 3 0(以上由 ADEKA(股)生產); f| sumilizer GM ' sumilizer GS ' sumilizer MDP— S ' sumilizer BBM — S、sumilizer WX — R、sumilizer GA — 80(以上由住 友化學(股)生產);IRGANOX 1010、IRGANOX 1 03 5、 IRGANOX 1 076、 IRGANOX 1 098、 IRGANOX 1135、 IRGANOX 1 3 3 0、IRGANOX 1 726、IRGANOX 1 425WL > IRGANOX 1 520L 'IRGANOX 245 'IRGANOX 259 'IRGANOX 3114、IRGANOX 565、IRGAMOD 295(以上由 Ciba Japan (股) 生產);Yoshinox BHT、Yoshinox BB、Yoshinox 2246G、 ◎ADK STAB AO- 60, ADK STAB AO- 70, ADK STAB AO — 80, ADK STAB AO — 3 3 0 (above produced by ADEKA); f| sumilizer GM ' sumilizer GS ' sumilizer MDP — S ' sumilizer BBM — S, sumilizer WX — R, sumilizer GA — 80 (above produced by Sumitomo Chemical Co., Ltd.); IRGANOX 1010, IRGANOX 1 03 5, IRGANOX 1 076, IRGANOX 1 098, IRGANOX 1135, IRGANOX 1 3 3 0, IRGANOX 1 726, IRGANOX 1 425WL > IRGANOX 1 520L 'IRGANOX 245 'IRGANOX 259 'IRGANOX 3114, IRGANOX 565, IRGAMOD 295 (above produced by Ciba Japan); Yoshinox BHT, Yoshinox BB, Yoshinox 2246G, ◎

Yoshinox 425、Yoshinox 250 'Yoshinox 93 0 'Yoshinox SS、 Yoshinox TT、Yoshinox 917、Yoshinox 314(以上由 API(股) 生產)等。Yoshinox 425, Yoshinox 250 'Yoshinox 93 0 'Yoshinox SS, Yoshinox TT, Yoshinox 917, Yoshinox 314 (above produced by API).

作爲上述受阻胺化合物,可以列舉例如四(2,2,6,6-四 甲基-4-呱啶基)1,2,3,4- 丁烷四羧酸酯、二(1-辛氧基 -2,2,6,6-四甲基-4-呱啶基)癸二酸酯、二(1,2,2,6,6-五甲基 -4-呱啶基)[[3, 5-二(1,1-二甲基乙基)-4-羥基苯基]甲基]丁 基丙二酸酯等,作爲其市售品,可以列舉例如ADK STAB LA -36- 201033737 -52、ADK STAB LA- 57、ADK STAB LA- 62、ADK STAB LA - 67、ADK STAB LA — 63P、ADK STAB LA - 68LD、ADK STAB LA - 77、ADK STAB LA - 82、ADK STAB LA — 87(以 上由 ADEKA(股)生產);sumilizer 9A(由住友化學(股)生 產); CHIMASSORB 119FL 、 CHIMASSORB 2020FDL 、 CHIMASSORB 944FDL、TINUVIN 622LD、TINUVIN 123、 TINUVIN 144、TINUVIN 765、TINUVIN 770DF(以上由 Ciba specialty chemicals 公司生產)等。 作爲上述烷基膦酸酯化合物,可以列舉例如亞丁基二 {2-第三丁基-5-甲基-對伸苯基}-?,?,?,?-四-十三烷基二 (膦)、二(十八烷基)季戊四醇二亞磷酸酯、2,2’-亞甲基二 (4,6-二-第三丁基-1-苯基氧基)(2-乙基己氧基)磷、三(2,4-二-第三丁基苯基)亞磷酸酯、3,9-二(2,6-二第三丁基-4-甲 基苯氧基)-2,4,8,10-四氧雜-3,9·二磷雜螺[5.5]十一烷等, 作爲其市售品,可以列舉例如ADK STAB PEP— 4C、ADK STAB PEP- 8、ADK STAB PEP- 8W、ADK STAB PEP- 24G、 ADK STAB PEP - 36、ADK STAB HP - 10、ADK STAB 2112、 ADK STAB 260、ADK STAB 522A、ADK STAB 1178、ADK STAB 1 5 00、ADK STAB C、ADK STAB 1 3 5 A ' ADK STAB 3010、ADK STAB TPP(以上由 ADEKA(股)生產);IRGAFOS 168(以上由 Ciba specialty chemicals 生產)等。 作爲上述含硫原子的化合物,可以列舉例如季戊四醇 四(3-十二烷基硫代丙酸酯)、二(丙酸-正十三烷基)硫醚、 -37- 201033737 硫二亞乙基二[3-(3,5-二叔丁基·4-羥基苯基)丙酸酯]等,除 此以外,還可以使用硫醚。作爲硫醚的市售品,可以列舉 例如 ADK STAB AO - 412S ' ADK STAB AO— 503(以上由 ADEKA(股)生產);sumilizer TPL — R、sumilizer TPM、 sumilizer TPS、sumilizer TP — D、sumilizer MB(以上由住 友化學(股)生產);IRGANOX PS 800FD、IRGANOX PS802FD、IRGANOX 1035(以上由 Ciba specialty chemicals 生產);DLTP、DSTP、DMTP、DTTP(以上由 API(股)生產) © 等。 這種(H)自由基捕獲劑可以單獨或兩種以上組合使用。 (Η)自由基捕獲劑,可以相對於100質量份(Α)鹼可溶 性樹脂,以1 5重量份以下的比率使用,通過以0.0 1 ~ 1 5質 量份的範圍,進而以1〜10質量份的範圍使用,在可以不損 害所得感放射線性樹脂組成物的射線敏感性的情況下,有 效地發揮(Η)自由基捕獲劑的效果,因此是較佳的。 <感放射線性樹脂組成物> ❹ 本發明的感放射線性樹脂組成物可以通過將上述(Α) 鹼可溶性樹脂、化合物(Β)和共聚物(C),或者(Α)鹼可溶性 樹脂、化合物(Β)和共聚物(C)以及如上所述的其他成分均 勻地混合而調製。本發明的感放射線性樹脂組成物,較佳 以溶於適當的溶劑中的溶液狀態使用。例如,通過將(Α) 鹼可溶性樹脂、化合物(Β)和共聚物(C)以及任選添加的其 他成分以一定的比率進行混合,可調製出溶液狀態的感放 射線性樹脂組成物。 -38- 201033737 作爲本發明感放射線性樹脂組成物的調製中可以使用 的溶劑,使用能夠均勻地溶解(A)鹼可溶性樹脂、化合物(B) 和共聚物(C)以及任選混合的其他成分中的各成分,並且不 與各成分反應的溶劑。 作爲這樣的溶劑,可以列舉與作爲可以用於製備上述 共聚物(A)的溶劑而例示的相同溶劑。 在這種溶劑中,從各成分的溶解性、與各成分的反應 性、形成塗膜的容易性等角度考慮,較佳使用醇、乙二醇 ® 醚、乙二醇烷基醚乙酸酯、酯和二甘醇。其中,可特佳使 用苄醇、2-苯基乙醇、3-苯基-1-丙醇、乙二醇單丁基醚乙 酸酯、二甘醇單乙基醚乙酸酯、二甘醇二乙醚、二甘醇乙 基甲基醚、二甘醇二甲醚、丙二醇單甲基醚、丙二醇單甲 基醚乙酸酯、甲氧基丙酸甲酯、乙氧基丙酸乙酯。 爲了提髙膜厚的面內均勻性,還可以與上述溶劑一起 倂用高沸點溶劑。作爲可以倂用的髙沸點溶劑,可以列舉 0 例如N-甲基甲醯胺、N,N-二甲基甲醯胺、N_甲基甲醯苯 胺、N-甲基乙醯胺、N,N-二甲基乙醯胺、N-甲基吡咯烷酮、 —甲基亞颯、节基乙基酸、二己基醚、丙酮基丙酮、異佛 爾酮、己酸、辛酸、1-辛醇、1-壬醇、乙酸节醋、苯甲酸 乙醋、草酸二乙酯、馬來酸二乙酯、γ -丁內酯、碳酸乙二 酯、碳酸丙二酯、苯基溶纖劑乙酸酯等。其中,較佳爲Ν_ 甲基吡咯烷酮、γ-丁內酯、Ν,Ν-二甲基乙醯胺。 作爲本發明感放射線性樹脂組成物的溶劑,當倂用高 沸點溶劑時,其用量相對於全部溶劑,可較佳爲1〜4〇質量 -39- 201033737 %,更佳爲3~30質量%。當高沸點溶劑的用量爲i-40質量 %時,塗膜的膜厚均一性爲良,並且圖案也良好。 當將本發明的感放射線性樹脂組成物配製成溶液狀態 時,溶液中除溶劑以.外的成分(即(A)鹼可溶性樹脂、化合 物(B)和共聚物(C)以及任選添加的其他成分的合計量)所占 的比率,可以根據使用目的和所需膜厚値等任意地設定, 較佳爲5〜50質量%,更佳爲10~40質量%,再更佳爲15〜35 質量%。 如此配製的組成物溶液還可以用孔徑爲〇·2μιη左右的 微孔濾器等過濾後再供給使用。 <層間絕緣膜的形成方法> 接著,對用本發明感放射線性樹脂組成物形成層間絕 緣膜的方法進行說明。本發明的層間絕緣膜的形成方法特 徵在於按照以下順序包括以下步驟。 (1) 在基板上形成本發明的感放射線性樹脂組成物塗 膜的步驟, (2) 對該塗膜的至少一部分照射射線的步驟, (3 )顯影步驟,和 (4)加熱步驟。 [(1)在基板上形成本發明的感放射線性樹脂組成物塗 膜的步驟] 在上述(1)的步驟中,將本發明的感放射線性樹脂組成 物塗布於基板表面’較佳優選通過進行預烘焙除去溶劑而 形成塗膜’再通過進行後烘焙而使塗膜固化。 -40- 201033737 作爲可以在層間絕緣膜的形成中使用的基板的種類, 可以列舉例如玻璃基板、矽片以及在它們表面上形成各種 金屬的基板。 作爲樹脂組成物溶液的塗布方法,對其沒有特別的限 制,可以採用例如噴塗法、輥塗法、旋轉塗布法(旋塗法)、 縫模塗布法、棒塗法、噴墨法等適當的方法,特佳使用旋 塗法、縫模塗布法。特別是當採用縫模塗布法時,可以最 大限度地發揮本發明的有利效果,因此是較佳的。 ❹The hindered amine compound may, for example, be tetrakis(2,2,6,6-tetramethyl-4-acridinyl) 1,2,3,4-butanetetracarboxylate or di(1-octyloxy). Base-2,2,6,6-tetramethyl-4-acridinyl) sebacate, bis(1,2,2,6,6-pentamethyl-4-acridinyl)[[3 , 5-bis(1,1-dimethylethyl)-4-hydroxyphenyl]methyl]butyl malonate, etc., as a commercial product thereof, for example, ADK STAB LA-36-201033737 - 52, ADK STAB LA-57, ADK STAB LA-62, ADK STAB LA-67, ADK STAB LA-63P, ADK STAB LA-68LD, ADK STAB LA-77, ADK STAB LA-82, ADK STAB LA-87 ( The above is produced by ADEKA (share); sumilizer 9A (produced by Sumitomo Chemical Co., Ltd.); CHIMASSORB 119FL, CHIMASSORB 2020FDL, CHIMASSORB 944FDL, TINUVIN 622LD, TINUVIN 123, TINUVIN 144, TINUVIN 765, TINUVIN 770DF (above by Ciba specialty chemicals Company production) and so on. As the above alkylphosphonate compound, for example, butylenebis {2-t-butyl-5-methyl-p-phenylene}-? ,? ,? -tetra-tridecyl bis(phosphine), di(octadecyl)pentaerythritol diphosphite, 2,2'-methylenebis(4,6-di-t-butyl-1-phenyl Oxy)(2-ethylhexyloxy)phosphorus, tris(2,4-di-t-butylphenyl)phosphite, 3,9-di(2,6-di-t-butyl-4 -Methylphenoxy)-2,4,8,10-tetraoxa-3,9-diphosphaspiro[5.5]undecane, etc., as a commercial product thereof, for example, ADK STAB PEP-4C , ADK STAB PEP-8, ADK STAB PEP-8W, ADK STAB PEP-24G, ADK STAB PEP-36, ADK STAB HP-10, ADK STAB 2112, ADK STAB 260, ADK STAB 522A, ADK STAB 1178, ADK STAB 1 5 00, ADK STAB C, ADK STAB 1 3 5 A ' ADK STAB 3010, ADK STAB TPP (above produced by ADEKA); IRGAFOS 168 (produced by Ciba specialty chemicals) and the like. Examples of the sulfur atom-containing compound include pentaerythritol tetrakis(3-dodecylthiopropionate), bis(propionate-n-tridecyl) sulfide, and -37-201033737 thiodiethylene. In addition to bis[3-(3,5-di-tert-butyl-4-hydroxyphenyl)propionate], a thioether can also be used. As a commercial item of the thioether, for example, ADK STAB AO - 412S ' ADK STAB AO - 503 (above produced by ADEKA); sumilizer TPL - R, sumilizer TPM, sumilizer TPS, sumilizer TP - D, sumilizer MB can be cited. (The above is produced by Sumitomo Chemical Co., Ltd.); IRGANOX PS 800FD, IRGANOX PS802FD, IRGANOX 1035 (produced by Ciba specialty chemicals); DLTP, DSTP, DMTP, DTTP (produced by API) ©etc. Such (H) radical scavengers may be used singly or in combination of two or more. The (Η) radical scavenger may be used in a ratio of 15 parts by weight or less based on 100 parts by mass of the alkali-soluble resin, and may be in the range of 0.01 to 15 parts by mass, and further preferably 1 to 10 parts by mass. The use of the range is effective in that the effect of the (Η) radical scavenger can be effectively exhibited without impairing the radiation sensitivity of the obtained radiation sensitive resin composition. <Radiation-sensitive linear resin composition> ❹ The radiation-sensitive resin composition of the present invention may be obtained by using the above-mentioned (Α) alkali-soluble resin, compound (Β) and copolymer (C), or (Α) alkali-soluble resin, The compound (Β) and the copolymer (C) and the other components as described above are uniformly mixed and prepared. The radiation sensitive resin composition of the present invention is preferably used in the form of a solution dissolved in a suitable solvent. For example, by mixing the (Α) alkali-soluble resin, the compound (Β) and the copolymer (C), and optionally other components at a certain ratio, a radiation-sensitive resin composition in a solution state can be prepared. -38- 201033737 As a solvent which can be used for preparation of the radiation sensitive resin composition of the present invention, it is possible to uniformly dissolve (A) an alkali-soluble resin, a compound (B) and a copolymer (C), and optionally other components. a solvent in which each component is not reacted with each component. As such a solvent, the same solvent as exemplified as the solvent which can be used for the preparation of the above copolymer (A) can be mentioned. In such a solvent, alcohol, ethylene glycol® ether, ethylene glycol alkyl ether acetate is preferably used from the viewpoints of solubility of each component, reactivity with each component, easiness of formation of a coating film, and the like. , esters and diethylene glycol. Among them, benzyl alcohol, 2-phenylethanol, 3-phenyl-1-propanol, ethylene glycol monobutyl ether acetate, diethylene glycol monoethyl ether acetate, diethylene glycol can be preferably used. Diethyl ether, diethylene glycol ethyl methyl ether, diglyme, propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, methyl methoxypropionate, ethyl ethoxy propionate. In order to improve the in-plane uniformity of the film thickness, it is also possible to use a high boiling point solvent together with the above solvent. Examples of the hydrazine boiling point solvent which can be used include 0, for example, N-methylformamide, N,N-dimethylformamide, N-methylformamide, N-methylacetamide, N, N-dimethylacetamide, N-methylpyrrolidone, methylmeridene, benzylidene acid, dihexyl ether, acetone acetone, isophorone, hexanoic acid, octanoic acid, 1-octanol, 1-nonanol, acetic acid vinegar, ethyl benzoate, diethyl oxalate, diethyl maleate, γ-butyrolactone, ethylene carbonate, propylene carbonate, phenyl cellosolve acetate Wait. Among them, preferred are Ν_methylpyrrolidone, γ-butyrolactone, hydrazine, hydrazine-dimethylacetamide. As the solvent of the radiation sensitive resin composition of the present invention, when a high boiling point solvent is used, the amount thereof is preferably from 1 to 4 Å by mass to 39 to 201033737%, more preferably from 3 to 30% by mass based on the total of the solvent. . When the amount of the high boiling point solvent is i-40% by mass, the film thickness uniformity of the coating film is good, and the pattern is also good. When the radiation sensitive resin composition of the present invention is formulated into a solution state, components other than the solvent (ie, (A) alkali-soluble resin, compound (B), and copolymer (C) and optionally added are added to the solution. The ratio of the total amount of other components may be arbitrarily set depending on the purpose of use and the desired film thickness, etc., preferably 5 to 50% by mass, more preferably 10 to 40% by mass, still more preferably 15 ~35 mass%. The composition solution thus prepared can also be filtered by a micropore filter having a pore size of about 2 μm or the like and then supplied. <Method of Forming Interlayer Insulating Film> Next, a method of forming an interlayer insulating film using the radiation sensitive resin composition of the present invention will be described. The method of forming the interlayer insulating film of the present invention is characterized in that the following steps are included in the following order. (1) a step of forming a coating film of the radiation sensitive resin composition of the present invention on a substrate, (2) a step of irradiating at least a part of the coating film, (3) a developing step, and (4) a heating step. [(1) Step of Forming Coating Film of Radiation-Sensitive Resin Composition of the Present Invention on Substrate] In the step (1), the radiation-sensitive resin composition of the present invention is applied to the surface of the substrate. The solvent is removed by prebaking to form a coating film, and the coating film is cured by post-baking. -40-201033737 The type of the substrate which can be used for the formation of the interlayer insulating film is, for example, a glass substrate, a tantalum sheet, and a substrate on which various metals are formed on the surface. The coating method of the resin composition solution is not particularly limited, and may be, for example, a spray coating method, a roll coating method, a spin coating method (spin coating method), a slit die coating method, a bar coating method, an inkjet method, or the like. The method is particularly preferably a spin coating method or a slit die coating method. In particular, when the slit die coating method is employed, the advantageous effects of the present invention can be exerted to the utmost extent, and therefore it is preferable. ❹

作爲預烘焙和後烘焙的條件,分別根據各成分的種 類、使用比率等而適當地設定。預烘焙可以在例如70〜90°C 下進行例如1〜15分鐘左右的條件下進行。後烘焙可以採用 加熱板、潔淨烘箱等適當的加熱裝置進行。作爲後烘焙的 溫度,較佳爲120〜25 0°C。作爲後烘焙時間,當使用加熱 板作爲加熱裝置時,較佳進行5〜30分鐘,當採用潔淨烘箱 作爲加熱裝置時,較佳進行30~90分鐘。 如此形成的塗膜的厚度,較佳爲0.1~8μιη,更佳爲 0.1~6μιη’ 再更佳爲 〇.·ι 〜4μηι。 [(2)對該塗膜的至少一部分照射射線的步驟] 在上述(2)的步驟中,對所形成的塗膜,借助具有規定 圖案的掩模照射射線。作爲此時可以使用的射線,可以列 舉例如紫外線、遠紫外線等。 作爲上述紫外線,可以列舉例如g線(波長43 6nm)、i 線(波長3 6 511111)等。作爲遠紫外線,可以列舉例如KrF準 分子鐳射等。它們當中,較佳爲紫外線,其中特佳含有選 -41- 201033737 自g線和i線構成的群組中的至少一種亮線的射線。 作爲射線的照射量,較佳爲1 5 00-3 000 J/m2。另外, 若使用本發明的感放射線性樹脂組成物,則具有即使當該 射線照射量爲2000J/m2以下時,也可以形成所需的圖案, 甚至即使當該値爲1 700 J/m2以下時,也可以形成所需的圖 案的優點。 [(3)顯影步驟] 然後在(3)的步驟中,通過採用顯影液對上述照射射線 ® 後的塗膜進行顯影,除去射線照射部分,形成圖案。 作爲顯影步驟中使用的顯影液,可以使用例如氫氧化 鈉、氫氧化鉀、碳酸鈉、氫氧化四甲基銨、氫氧化四乙基 銨等鹼(鹼性化合物)的水溶液。此外,還可以將在上述鹼 水溶液中添加適量的甲醇、乙醇等水溶性有機溶劑或表面 活性劑的水溶液,或者溶解本發明組成物的各種有機溶劑 作爲顯影液使用。 作爲顯影方法,可以採用例如流動展開塗布法、浸漬 法、震盪浸漬法、沖洗法等適當的方法。顯影時間,根據 感放射線性樹脂組成物的組成而不同,可以爲例如30〜120 秒。 另外,以前已知的感放射線性樹脂組成物,如果顯影 時間比最佳値超過20〜25秒的程度,則由於形成的圖案會 發生脫落,因而必須嚴格控制顯影時間,而對於本發明的 感放射線性樹脂組成物的情況,即使比最佳顯影時間超出 的時間達到3 0秒以上,也可以形成良好的圖案,在製品成 -42- 201033737 品率方面存在優勢。 在(3)顯影步驟後,較佳進行例如流水清洗的沖洗處理 ,並且較佳通過採用高壓汞燈等對圖案化的塗膜整面進行 射線照射(後曝光),對圖案化的塗膜中殘留的(B)l,2-醌二 疊氮化合物進行分解處理。該後曝光步驟中的射線照射量 ,較佳爲2000~5 000 J/m2左右。 [(4)加熱步驟] 最後在(4)的步驟中,通過用加熱板、供箱等加熱裝置 ® 進行加熱處理(後烘焙處理),對圖案化的塗膜進行固化處 理。該(4)的步驟中的加熱溫度爲例如120〜250°C。加熱時 間根據加熱機器的種類而不同,例如,當在加熱板上進行 加熱處理時,可以爲5〜3 0分鐘,當在烘箱中進行加熱處理 時,可以爲3 0-90分鐘。此時,還可以採用進行2次以上 加熱步驟的分步烘焙法等。 這樣,即可在基板表面上形成對應於目的層間絕緣膜 的圖案狀薄膜。 <層間絕緣膜> 由下述的實施例可知,如上形成的層間絕緣膜,對基 板的黏合性良好,耐熱性、耐溶劑性和透明性等優良,並 且介電常數低。因此,可適合作爲各種電子產品的層間絕 緣膜使用。 [實施例] 以下通過實施例對本發明進行更具體的說明,但是本 發明並不局限於這些實施例》另外,以下,聚合物的重量 -43- 201033737 平均分子量(Mw)和數均分子量(Μη)通過採用以下條件的 凝膠滲透色譜(GPC)測定。 測定裝置:Τ 〇 s 〇 h (股)製造的“ H L C 8 2 2 0系統” 分離柱:4根Tosoh(股)製造的TSK gel GMHhr—N串 聯連接而使用The conditions for prebaking and post-baking are appropriately set depending on the type of each component, the use ratio, and the like. The prebaking can be carried out, for example, at 70 to 90 ° C for about 1 to 15 minutes. The post-baking can be carried out by using a suitable heating means such as a hot plate or a clean oven. The temperature for post-baking is preferably from 120 to 25 °C. As the post-baking time, when a heating plate is used as the heating means, it is preferably carried out for 5 to 30 minutes, and when a clean oven is used as the heating means, it is preferably carried out for 30 to 90 minutes. The thickness of the coating film thus formed is preferably from 0.1 to 8 μm, more preferably from 0.1 to 6 μm, and even more preferably from 〇.·ι to 4 μηι. [(2) Step of irradiating at least a part of the coating film] In the step (2), the formed coating film is irradiated with a ray by a mask having a predetermined pattern. As the rays which can be used at this time, for example, ultraviolet rays, far ultraviolet rays, and the like can be listed. Examples of the ultraviolet rays include a g line (wavelength of 4 6 nm), an i line (wavelength of 3 6 511111), and the like. Examples of the far ultraviolet rays include KrF quasi-molecular lasers and the like. Among them, ultraviolet rays are preferred, and particularly preferably, rays of at least one bright line selected from the group consisting of g-line and i-line are selected from -41 to 201033737. The irradiation amount of the rays is preferably from 1 5 00 to 3 000 J/m 2 . Further, when the radiation sensitive resin composition of the present invention is used, even when the irradiation amount of the radiation is 2000 J/m 2 or less, a desired pattern can be formed even when the enthalpy is 1 700 J/m 2 or less. It is also possible to form the advantages of the desired pattern. [(3) Developing Step] Then, in the step (3), the coating film after the irradiation ray ® is developed by using a developing solution, and the irradiated portion is removed to form a pattern. As the developing solution used in the developing step, for example, an aqueous solution of a base (basic compound) such as sodium hydroxide, potassium hydroxide, sodium carbonate, tetramethylammonium hydroxide or tetraethylammonium hydroxide can be used. Further, an aqueous solution of a water-soluble organic solvent such as methanol or ethanol or a surfactant, or various organic solvents in which the composition of the present invention is dissolved may be added to the aqueous alkali solution as a developing solution. As the developing method, for example, a suitable method such as a flow spread coating method, a dipping method, a shaking dipping method, or a rinsing method can be employed. The development time varies depending on the composition of the radiation sensitive resin composition, and may be, for example, 30 to 120 seconds. Further, in the previously known radiation sensitive resin composition, if the development time exceeds the optimum enthalpy by more than 20 to 25 seconds, the formed pattern may fall off, so that the development time must be strictly controlled, and the feeling of the present invention is In the case of the radiation-linear resin composition, even if the time exceeding the optimum development time reaches 30 seconds or more, a good pattern can be formed, and there is an advantage in the product yield of -42-201033737. After the (3) development step, a rinsing treatment such as running water washing is preferably performed, and it is preferred to irradiate (post-exposure) the entire surface of the patterned coating film by using a high-pressure mercury lamp or the like in the patterned coating film. The residual (B) 1,2-quinonediazide compound is subjected to decomposition treatment. The amount of radiation exposure in the post-exposure step is preferably about 2,000 to 5,000 J/m2. [(4) Heating step] Finally, in the step (4), the patterned coating film is subjected to a curing treatment by heat treatment (post-baking treatment) using a heating device such as a hot plate or a supply box. The heating temperature in the step (4) is, for example, 120 to 250 °C. The heating time varies depending on the type of the heating machine. For example, it may be 5 to 30 minutes when heat-treated on a hot plate, and may be 30 to 90 minutes when heat-treated in an oven. In this case, a stepwise baking method or the like which performs two or more heating steps may be employed. Thus, a pattern-like film corresponding to the target interlayer insulating film can be formed on the surface of the substrate. <Interlayer insulating film> It is understood from the following examples that the interlayer insulating film formed as described above is excellent in adhesion to a substrate, excellent in heat resistance, solvent resistance, transparency, and the like, and has a low dielectric constant. Therefore, it can be suitably used as an interlayer insulating film of various electronic products. [Examples] Hereinafter, the present invention will be more specifically described by way of Examples, but the present invention is not limited to these Examples. In addition, the weight of the polymer - 43 - 201033737, the average molecular weight (Mw) and the number average molecular weight (Μη) ) was determined by gel permeation chromatography (GPC) using the following conditions. Measuring device: "H L C 8 2 2 0 system" manufactured by Τ 〇 s 〇 h (share) Separation column: TSK gel GMHhr-N manufactured by Tosoh (strand) is connected in series

管柱溫度:4 0 °C 洗脫溶劑:四氫呋喃(和光純藥工業(股)生產) 流速:1.0ml/分鐘 ® 樣品濃度:1.0質量% 樣品注入量:ΙΟΟμιη 檢測器:差示折射儀 標準物質:單分散聚苯乙烯 另外,感放射線性樹脂組成物的溶液黏度,採用東京 計器(股)製造的Ε型黏度計在30°C下測定》 <共聚物(A)的合成> 合成例1 ❹ 向裝有冷卻管和攪拌器的燒瓶中,加入7重量份2,2’-偶氮二(2,4-二甲基戊腈)、200重量份二甘醇乙基甲基醚。 繼續加入16重量份甲基丙烯酸、16重量份甲基丙烯酸三 環[5.2.1.02’6]癸烷-8-基酯、20重量份丙烯酸2-甲基環己基 酯、40重量份甲基丙烯酸縮水甘油酯、1〇重量份苯乙烯和 3重量份α -甲基苯乙烯二聚物,用氮氣置換後,開始緩慢 攪拌。使溶液的溫度升至70°C,保持該溫度4小時,得到 含共聚物(A_ 1)的聚合物溶液。 -44 - 201033737 共聚物(A — 1)的聚苯乙烯換算的重量平均·分子量(M w) 爲8 000,分子量分佈(Μw/Mn)爲2.3。另外,這裏製得的聚 合物溶液的固體含量濃度(是指聚合物溶液中所含的聚合 物的重量占聚合物溶液的總重量的比率,下同。)爲34.4 重量%。 合成例2 向裝有冷卻管和攪拌器的燒瓶中’加入8重量份2,2’-偶氮二(2,4-二甲基戊腈)和 220重量份二甘醇乙基甲基 © 醚。繼續加入11重量份甲基丙烯酸、12重量份甲基丙烯 酸四氫糠基酯、40重量份甲基丙烯酸縮水甘油酯、15重量 份N_環己基馬來醯亞胺、10重量份甲基丙烯酸十二烷基 酯、10重量份α-甲基-對羥基苯乙烯和3重量份α-甲基苯 乙烯二聚物,用氮氣置換後,開始緩慢攪拌。使溶液的溫 度升至70 °C,保持該溫度5小時,得到含共聚物(Α- 2)的 聚合物溶液。 共聚物(A-2)的聚苯乙烯換算的重量平均分子量(Mw) 爲8000,分子量分佈(M w/Mn)爲2.3。另外,這裏製得的聚 合物溶液的固體含量濃度爲31.9重量%» <共聚物(C)的合成> 合成例3 向裝有攪拌裝置、冷凝器和溫度計的玻璃燒瓶中,加 入作爲(cl)化合物的上述式(cl 一 1)表示的化合物28.4質量 份、作爲(c2)化合物的NK— esterM— 90G(商品名,新中村 化學(股)生產)20.7質量份、作爲(c3)化合物的下述式(c3 — -45- 201033737 1—1— 1)表示的化合物18.1質量份、作爲(c4)化合物的甲 基丙烯酸甲酯5.9質量份和丙烯酸2-乙基己基酯23.5質量 份、作爲(c5)化合物的丁二醇兩末端被甲基丙烯酸酯化的 化合物3·4質量份、作爲溶劑的異丙醇414質量份,在氮 氣流中,在回流下,加入作爲聚合引發劑的2,2,-偶氮二異 丁腈0.7質量份和作爲鏈轉移劑的十二烷基硫醇4質量份 後’在75 °C下回流8小時進行共聚,得到含有共聚物(c — 1)的溶液。然後,用蒸發器在7〇。(:的加熱條件下除去溶劑, ® 分離出共聚物(C— 1)。 所得共聚物(C-1)的數均分子量Mn爲2800,重量平 均分子量Mw爲53 00,分子量分佈(Mw/Mn)爲1.9。Column temperature: 40 °C Elution solvent: tetrahydrofuran (produced by Wako Pure Chemical Industries, Ltd.) Flow rate: 1.0 ml/min® Sample concentration: 1.0% by mass Sample injection amount: ΙΟΟμιη Detector: Differential refractometer standard substance : Monodisperse polystyrene In addition, the solution viscosity of the radiation sensitive resin composition was measured at 30 ° C using a Ε-type viscometer manufactured by Tokyo Keiki Co., Ltd. <Synthesis of Copolymer (A)> Synthesis Example 1 ❹ To a flask equipped with a cooling tube and a stirrer, 7 parts by weight of 2,2'-azobis(2,4-dimethylvaleronitrile) and 200 parts by weight of diethylene glycol ethyl methyl ether were added. Continue to add 16 parts by weight of methacrylic acid, 16 parts by weight of tricyclo[5.2.1.0''6]nonane-8-yl methacrylate, 20 parts by weight of 2-methylcyclohexyl acrylate, 40 parts by weight of methacrylic acid Glycidyl ester, 1 part by weight of styrene and 3 parts by weight of α-methylstyrene dimer were slowly stirred after replacement with nitrogen. The temperature of the solution was raised to 70 ° C, and the temperature was maintained for 4 hours to obtain a polymer solution containing the copolymer (A-1). -44 - 201033737 The copolymer (A-1) had a polystyrene-equivalent weight average molecular weight (Mw) of 8,000 and a molecular weight distribution (Μw/Mn) of 2.3. Further, the solid content concentration of the polymer solution prepared here (the ratio of the weight of the polymer contained in the polymer solution to the total weight of the polymer solution, the same hereinafter) was 34.4% by weight. Synthesis Example 2 '8 parts by weight of 2,2'-azobis(2,4-dimethylvaleronitrile) and 220 parts by weight of diethylene glycol ethylmethyl group were added to a flask equipped with a cooling tube and a stirrer ether. Continue to add 11 parts by weight of methacrylic acid, 12 parts by weight of tetrahydrofurfuryl methacrylate, 40 parts by weight of glycidyl methacrylate, 15 parts by weight of N-cyclohexylmaleimide, 10 parts by weight of methacrylic acid The dodecyl ester, 10 parts by weight of α-methyl-p-hydroxystyrene, and 3 parts by weight of the α-methylstyrene dimer were slowly stirred after replacement with nitrogen. The temperature of the solution was raised to 70 ° C, and the temperature was maintained for 5 hours to obtain a polymer solution containing a copolymer (Α-2). The copolymer (A-2) had a polystyrene-equivalent weight average molecular weight (Mw) of 8,000 and a molecular weight distribution (Mw/Mn) of 2.3. Further, the solid content concentration of the polymer solution prepared here was 31.9% by weight»<Synthesis of Copolymer (C)> Synthesis Example 3 Into a glass flask equipped with a stirring device, a condenser and a thermometer, it was added as ( Cl) 28.4 parts by mass of the compound represented by the above formula (cl-1), 20.7 parts by mass of NK-esterM-90G (trade name, manufactured by Shin-Nakamura Chemical Co., Ltd.) as the compound (c2), as the compound (c3) 18.1 parts by mass of the compound represented by the following formula (c3 - -45 - 201033737 1-1 - 1), 5.9 parts by mass of methyl methacrylate as the compound (c4), and 23.5 parts by mass of 2-ethylhexyl acrylate, 3.4 parts by mass of a compound in which both ends of butanediol of the compound (c5) were methacrylated, and 414 parts by mass of isopropanol as a solvent were added as a polymerization initiator under reflux in a nitrogen stream. 0.7 parts by mass of 2,2,-azobisisobutyronitrile and 4 parts by mass of dodecylmercaptan as a chain transfer agent were copolymerized at 75 ° C for 8 hours to obtain a copolymer (c-1). )The solution. Then, use an evaporator at 7 〇. (: The solvent was removed under heating, ® was used to separate the copolymer (C-1). The obtained copolymer (C-1) had a number average molecular weight Mn of 2,800, a weight average molecular weight Mw of 50,000, and a molecular weight distribution (Mw/Mn). ) is 1.9.

Me·Me·

MeMe

•Si—Ο•Si—Ο

Me I o—c—c=ch2II o (C3-1-1-1 )Me I o—c—c=ch2II o (C3-1-1-1 )

Me (上式中,Me爲甲基)。 -46 201033737 合成例4 在上述合成例3中,除了使作爲鏈轉移劑的十二烷基 硫醇的添加量爲1質量份以外,與合成例3同樣地操作, 得到共聚物(C— 2)。 所得共聚物(C— 2)的數均分子量Μη爲4700,重量平 均分子量Mw爲11〇〇〇,分子量分佈(M w/M η)爲2.3。 合成例5 在上述合成例3中,不使用作爲鏈轉移劑的十二烷基 ® 硫醇,並使共聚溫度和時間分別爲73 °C和1 〇小時,除此 以外,與合成例3同樣地操作,得到共聚物(C - 3)。 所得共聚物(C— 3)的數均分子量Μη爲5600,重量平 均分子量Mw爲21000,分子量分佈(Mw/Mn)爲3.8。 合成例6 向裝有攪拌裝置、冷凝器和溫度計的玻璃燒瓶中,加 入作爲(cl)化合物的上述式(cl 一 1)表示的化合物39.4質量 / 份、作爲(c2)化合物的NK-esterM-90G(新中村化學(股) 生產)31.6質量份、作爲(c3)化合物的上述式(c3— 1一 1一 1) 表示的化合物29.0質量份、作爲溶劑的異丙醇414質量 份,在氮氣流中,在回流下’加入作爲聚合引發劑的偶氮 二異丁腈0.7質量份、作爲鏈轉移劑的十二烷基硫醇4質 量份後,在7 5 °C下回流8小時進行共聚,得到含有共聚物 (C - 4)的溶液。然後,用蒸發器在70 °C的加熱條件下脫去 溶劑,分離出共聚物(C 一 4)。 所得共聚物(C— 4)的分子量,數均分子量爲3000’重 -47- 201033737 量平均分子量爲6000。另外,分子量分佈(Μ w/Mn)爲2.0。 合成例7 向裝有攪拌裝置、冷凝器和溫度計的玻璃燒瓶中’加 入作爲(cl)化合物的上述式(cl 一 1)表示的化合物28.4質量 份、作爲(c2)化合物的NK—esterM—90G(新中村化學(股) 生產)20.7質量份、作爲(c3)化合物的上述式(c3— 1 一 1— 1) 表示的化合物21.5質量份、作爲(c4)化合物的甲基丙烯酸 甲酯5.9質量份和丙烯酸2-乙基己基酯23.5質量份、以及 W 作爲溶劑的異丙醇4 1 4質量份,在氮氣流中,在回流下’ 加入作爲聚合引發劑的2,2’-偶氮二異丁腈0.7質量份、作 爲鏈轉移劑的十二烷基硫醇4質量份後,在75 °C下回流8 小時進行共聚,得到含有共聚物(C - 5)的溶液。然後’用 蒸發器在7〇°C的加熱條件下脫去溶劑,分離出共聚物(C -5) » 所得共聚物(C— 5)的數均分子量Μη爲2600,重量平 均分子量Mw爲5000,另外,分子量分佈(Mw/Mn)爲1.9。 ❹ 實施例1 [感放射線性樹脂組成物的調製] 將相當於100質量份(固含量)共聚物(A — 1)的量的、 作爲(A)共聚物的上述合成例1中合成的含共聚物(A 一 1)的 溶液,30質量份作爲(B)化合物的4,4’-[1-[4-[1-[4 -羥基苯 基]-卜甲基乙基]苯基]亞乙基]雙酚(1.0莫耳)與12-萘醌二 疊氮-5-磺醯氯(2.0莫耳)的縮合物(B — 1),以及〇.5質量份 作爲(C)共聚物的上述合成例3中製得的共聚物(c — υ進行 -48- 201033737 混合,再加入作爲溶劑的二甘醇甲基乙基醚後,用孔徑爲 0.2 μιη的薄膜濾器進行過濾,調製出感放射線性樹脂組成 物(S- 1)。 [作爲層間絕緣膜的性能評價] (1) 塗膜的外觀評價 在550x650 mm的形成了鉻膜的玻璃上,採用縫模塗布 器(東京應化工業(股)製造,型號“TR6321 05 — CL”)塗布以 上調製的感放射線性樹脂組成物(S-1),設定達到的壓力 ® 爲lOOPa,在真空下除去溶劑後,再在90°C下預烘焙2分 鐘,形成膜厚爲Ι.Ομιη的塗膜。 在鈉燈下對該塗膜進行目測観察外觀。此時,將塗膜 整體產生的煙霧狀斑痕稱作爲“煙霧斑”,源於預烘焙爐內 的接近銷(proximate pin)的斑痕稱作爲“銷斑”,調查其外貌 狀況。當這些斑痕基本上都不能看見時,評價爲“良好”, 當稍許能夠看見這些斑痕中的任一種時,評價爲“稍稍不合 格”,當能夠清晰地看見時,評價爲“不合格”。評價結果列 麕 於表1。 (2) 敏感度的評價 通過在550x650mm的形成了鉻膜的玻璃上,塗布六甲 基二矽氮烷(HMDS),再在60°C下加熱1分鐘,對其進行 HMDS處理。 在該HMDS處理後的形成了鉻膜的玻璃上,採用縫模 塗布器(“TR63 2 1 0 5 — CL”塗布以上調製的感放射線性樹脂 組成物(S — 1),設定達到的壓力爲lOOPa,在真空下除去溶 -49- 201033737 劑後,再在90 °C下預烘焙2分鐘,形成膜厚爲3.0 μιη的塗 膜。 採用Canon(股)製造的MPA- 600FA曝光機,通過具 有3.0 μιη的線條和間隙(1〇對1)圖案的掩模,以曝光量作 爲變數,對所得塗膜照射射線後,採用表1中所示濃度的 氫氧化四甲基銨水溶液,採用流動展開塗布法在25 °C下進 行顯影。這裏顯影時間,當採用氫氧化四甲基銨濃度爲0.4 質量%的顯影液時,爲80秒,當採用2.38質量。/。的顯影液 ^ 時,爲50秒。接下來,用超純水進行1分鐘流水沖洗,然 後使其乾燥,在用HMDS處理後的形成了鉻膜的玻璃基板 上形成圖案。 此時,調査使3. Ομιη線條和間隙(10對1)的間隙·圖案 完全溶解所需的曝光量。以該値作爲敏感度列於表1。當 該値爲2000J/m2以下時,敏感度可認定爲良好,當爲1700 J/m2以下時,敏感度.可認定爲非常優異。 (3)顯影裕度的評價 e 與上述“(2)敏感度的評價”同樣地對形成了鉻膜的玻 璃進行HMDS處理。在該HMDS處理後的形成了鉻膜的玻 璃上,採用縫模塗布器(“TR632105-CL”塗布以上調製的感 放射線性樹脂組成物(S- 1),設定達到的壓力爲i〇〇pa,在 真空乾燥下除去溶劑後,再在90°C下預烘焙2分鐘,形成 膜厚爲3.0μιη的塗膜。 採用Canon(股)製造的ΜΡ Α — 600FA曝光機,通過具 有3 · 0 μιη的線條和間隙(1 0對1)圖案的掩模,以相當於上 -50- 201033737 述“(2)敏感度評價”中測定的敏感度値的曝光量 膜進行曝光,然後,採用表1中所示濃度的氫 v 銨水溶液,以顯影時間作爲變數,採用流動展 25 t下進行顯影。接下來,用超純水進行1分鐘 然後使其乾燥,在用HMDS處理後的形成了鉻 形成圖案。 此時,以使線條的線寬爲3.0 μιη所需的顯 佳顯影時間列於表1。並且,在從該最佳顯影 Ο 步繼續顯影時,測定直到3.Ομπι線條·圖案脫落 將該時間作爲顯影裕度列於表1。當該値爲30 顯影裕度可認定爲良好。 (4)耐溶劑性的評價 在550x650 mm的形成了鉻膜的玻璃上,採 器(東京應化工業(股)製造,型號“TR632105-上調製的感放射線性樹脂組成物(S - 1 ),設定 爲lOOPa,在真空下除去溶劑後,再在90°C下 鐘,形成塗膜。採用Canon(股)製造的MPA-機,以累積照射量爲9000 J/m2對該塗膜進行曝 潔淨烘箱中於2 2 0 °C下加熱1小時,在形成了 上形成膜厚爲3.0 μιη的固化膜。 這裏,測定所得固化膜的膜厚(Τ1)。然後 該固化膜的鉻膜玻璃基板在溫度控制在7〇°C的 浸漬20分鐘後,再次測定固化膜的膜厚(tl), 導致的膜厚變化率{|tl-Tl|/Tl}xl00 [%]。該 ,對所得塗 氧化四甲基 開塗布法在 :流水沖洗, 膜的玻璃上 影時間爲最 時間起進一 時的時間, 秒以上時, 用縫模塗布 CL”)塗布以 達到的壓力 預烘焙2分 600FA曝光 光,然後在 鉻膜的玻璃 ,將形成了 二甲亞楓中 算出由浸漬 結果列於表 -51- 201033737 1。當該値爲5 %以下時,耐溶劑性可認定爲良好。 (5) 耐熱性的評價 與上述“(4)耐溶劑性的評價”中同樣地在形成了鉻膜 的玻璃上形成膜厚爲3.Ομιη的固化膜。 測定這裏所得的固化膜的膜厚(Τ2)。然後,將形成了 該固化膜的鉻膜玻璃基板置於潔淨烘箱中’在240°C下追 加加熱1小時後,再次測定固化膜的厚度(t2),計算由追加 加熱導致的膜厚變化率{|t2— Τ2|/Τ2}χ100 [%]。該結果列 ❹ 於表1 »當該値爲5%以下時,耐熱性可認定爲良好。 (6) 透明性的評價 在上述“(4)耐溶劑性的評價”中,除了採用5 5 0 x 650mm 的玻璃基板“NA35(NH Techno Glass(股)公司製造)”代替形 成了鉻膜的玻璃基板以外,同樣地進行操作,在玻璃基板 上形成固化膜。採用分光光度計“150— 20型雙光束(日立製 作所(股)製造以沒有保護膜的玻璃玻璃基板作爲參照 品,在400〜800nm波長範圍內測定具有該固化膜的玻璃基 ❹ 板的透光率。此時的最低透光率値列於表1。當該値爲90% 以上時,透明性可認定爲良好。 (7) 膜厚均一性的評價 與上述“(6)透明性的評價”同樣地在玻璃基板上形成 固化膜。對該固化膜,在20個的測定點處測定膜厚,按照 下式求出膜厚均一性。 膜厚均一性(%)=(塗布膜厚的最大値一最小 値)χ100/((20個點的塗膜厚度平均値)χ2) -52- 201033737 若這樣求得的塗膜厚度均一性爲1 %以下,則均一性可 認定爲良好。 另外,上述20個測定點,如下確定。即,扣除從基板 (550x650mm)的長邊和短邊的各邊緣向內50mm的範圍,以 內側區域(4 5 Ox 5 5 0mm)作爲測定區域,在該區域內,在長邊 方向和短邊方向的直線上,分別每隔40 mm各確定10個點 (合計20個點),以其作爲測定點。 (8)相對介電常數的評價 在通過劍麻拋光輪(麻拋光輪)進行拋光使表面平坦化 的SUS 304製基板上,採用旋塗法塗布以上調製的感放射 線性樹脂組成物(S - 1),設定達到的壓力爲1 OOPa,在真空 下除去溶劑後,再在90°C下預烘焙2分鐘,形成膜厚爲 3·0μιη的塗膜。採用Canon(股)製造的MPA— 600FA曝光 機,以累積照射量爲9000 J/m2對所得塗膜進行曝光,將該 基板在潔淨烘箱中於220 °C下加熱1小時,在SUS基板上 形成固化膜。採用蒸鍍法在該固化膜上形成Pt/Pd電極圖 案,製作出介電常數測定用的樣品。 對具有該電極圖案的基板,採用橫河·Hewlett-Packard Company(股)製造的HP 1 645 1 B電極和HP4284A精密LCR 儀,通過CV法,以10 kHz的頻率測定其相對介電常數。 測定結果列於表1。當該値爲3.9以下時,介電常數可認定 爲良好。 實施例2〜7、比較例1〜3 [感放射線性樹脂組成物的調製] -53- 201033737 在實施例1中,除了感放射線性樹脂組成物的各成分 的種類和用量分別如表1中所示以外,與實施例1同樣地 調製感放射線性樹脂組成物(S - 2)〜(S - 7)和(s - 1)~(S-3)。 採用這些組成物進行評價。 在這些實施例和比較例中使用的作爲化合物(B)的B — 1爲4,4’-[1-[4-[1-[4-羥基苯基]-1-甲基乙基]苯基]亞乙基] 雙酚(1 ·〇莫耳)與1,2-萘醌二疊氮-5-磺醯氯(2.0莫耳)的縮 合物。 在比較例1和2中,採用以下表面活性劑代替共聚物 (C) » c — 1 (比較例 1):聚矽氧烷類表面活性劑(由 Dow Coming Toray Co.,Ltd(股)生產的商品名:SH — 193)。 c— 2(比較例2):氟類表面活性劑(ΝΕΟ S (股)生產,商 品名:FTERGENT 222F) 另外,在比較例3中,共聚物(C)和表面活性劑均沒有 響使用。 [作爲層間絕緣膜的性能評價] 在實施例1中,除了分別使用以上調製的感放射線性樹 脂組成物(S — 2)~(S - 7)和(s - 1)〜(s - 3)代替感放射線性樹 脂組成物(S - 1)以外,與實施例1同樣地進行各種評價。 評價結果列於表1。 -54 - 201033737Me (Me is a methyl group in the above formula). -46 201033737 Synthesis Example 4 In the above Synthesis Example 3, a copolymer (C-2) was obtained in the same manner as in Synthesis Example 3 except that the amount of dodecyl mercaptan as a chain transfer agent was changed to 1 part by mass. ). The obtained copolymer (C-2) had a number average molecular weight Μη of 4,700, a weight average molecular weight Mw of 11 Å, and a molecular weight distribution (Mw/M η) of 2.3. Synthesis Example 5 In the same manner as in Synthesis Example 3, in the above-mentioned Synthesis Example 3, the dodecyl-based mercaptan as the chain transfer agent was not used, and the copolymerization temperature and time were 73 ° C and 1 Torr, respectively. The operation was carried out to obtain a copolymer (C-3). The obtained copolymer (C-3) had a number average molecular weight Μη of 5,600, a weight average molecular weight Mw of 21,000, and a molecular weight distribution (Mw/Mn) of 3.8. Synthesis Example 6 To a glass flask equipped with a stirring device, a condenser and a thermometer, 39.4 parts by mass of a compound represented by the above formula (cl-1) as a compound of (cl), and NK-esterM- as a compound of (c2) were added. 303.6 (manufactured by Shin-Nakamura Chemical Co., Ltd.) 31.6 parts by mass, 29.0 parts by mass of the compound represented by the above formula (c3-1 to 1-1) as the compound (c3), and 414 parts by mass of isopropanol as a solvent in nitrogen In the stream, 0.7 parts by mass of azobisisobutyronitrile as a polymerization initiator and 4 parts by mass of dodecylmercaptan as a chain transfer agent were added under reflux, and then refluxed at 75 ° C for 8 hours to carry out copolymerization. A solution containing the copolymer (C-4) was obtained. Then, the solvent was removed by heating at 70 ° C with an evaporator to separate the copolymer (C-4). The molecular weight of the obtained copolymer (C-4) having a number average molecular weight of 3,000 Å -47 - 201033737 and an average molecular weight of 6,000. Further, the molecular weight distribution (Μ w/Mn) was 2.0. Synthesis Example 7 28.4 parts by mass of a compound represented by the above formula (cl-1) as a compound of (cl) was added to a glass flask equipped with a stirring device, a condenser and a thermometer, and NK-ester M-90G as a compound of (c2) (manufactured by Shin-Nakamura Chemical Co., Ltd.) 20.7 parts by mass, 21.5 parts by mass of the compound represented by the above formula (c3 - 1 - 1 - 1) as the compound (c3), and methyl methacrylate 5.9 as the compound (c4) 2 parts by mass of 2-ethylhexyl acrylate and 4 14 parts by mass of isopropanol as a solvent, and 2,2'-azo two as a polymerization initiator were added under reflux in a nitrogen stream. 0.7 parts by mass of isobutyronitrile and 4 parts by mass of dodecylmercaptan as a chain transfer agent were copolymerized at 75 ° C for 8 hours to obtain a solution containing the copolymer (C - 5 ). Then, the solvent was removed by heating at 7 ° C with an evaporator to separate the copolymer (C -5) » The obtained copolymer (C-5) had a number average molecular weight Μη of 2,600 and a weight average molecular weight Mw of 5000. Further, the molecular weight distribution (Mw/Mn) was 1.9.实施 Example 1 [Preparation of a radiation-sensitive resin composition] The content of the copolymer (A-1) corresponding to 100 parts by mass (solid content) of the copolymer (A) was synthesized in the above Synthesis Example 1. a solution of the copolymer (A-1), 30 parts by mass of 4,4'-[1-[4-[1-[4-hydroxyphenyl]-methylethyl]phenyl]phenylene as a compound of (B) a condensate of bisphenol (1.0 mol) with 12-naphthoquinonediazide-5-sulfonyl chloride (2.0 mol) (B-1), and 5 parts by mass of (C) copolymer The copolymer obtained in the above Synthesis Example 3 (c-indole was mixed with -48-201033737, and after adding diethylene glycol methyl ethyl ether as a solvent, it was filtered with a membrane filter having a pore size of 0.2 μm to prepare a feeling. Radiation-linear resin composition (S-1) [Evaluation of performance as interlayer insulating film] (1) Appearance evaluation of coating film On a 550x650 mm chrome-plated glass, a slot die coater (Tokyo Chemical Industry Co., Ltd.) was used. (manufactured by the company), model "TR6321 05 - CL") coated with the above-mentioned radiation-sensitive resin composition (S-1), set to a pressure of 1000 Pa, at After removing the solvent under vacuum, it was prebaked at 90 ° C for 2 minutes to form a coating film having a film thickness of Ι.Ομιη. The coating film was visually observed under a sodium lamp to observe the appearance. At this time, the entire film was smoked. The smudges are called "smoke spots", and the plaques originating from the proximate pins in the pre-baking furnace are called "pins", and their appearance is investigated. When these plaques are basically not visible, the evaluation is "good". When any of these marks can be seen slightly, the evaluation is “slightly unqualified”, and when it can be clearly seen, the evaluation is “failed.” The evaluation results are listed in Table 1. (2) Sensitivity Evaluation was carried out by coating hexamethyldioxane (HMDS) on a 550 x 650 mm chrome-plated glass and heating it at 60 ° C for 1 minute to form HMDS. After the HMDS treatment, chromium was formed. On the glass of the film, the above-mentioned radiation-sensitive resin composition (S-1) was applied by a slot die coater ("TR63 2 1 0 5 - CL", and the pressure reached was set to 100 Pa, and the solution was removed under vacuum. - 201033737 after the agent, Prebaking at 90 ° C for 2 minutes to form a film having a film thickness of 3.0 μm. Using a MPA-600FA exposure machine manufactured by Canon, masking with a line of 3.0 μm and a gap (1〇 to 1) The mold was irradiated with radiation as a variable, and the developed film was irradiated with a tetramethylammonium hydroxide aqueous solution having a concentration shown in Table 1, and developed by a flow spread coating method at 25 ° C. When a developer having a tetramethylammonium hydroxide concentration of 0.4% by mass was used, it was 80 seconds, and when it was 2.38 mass. /. The developer ^ is 50 seconds. Next, it was rinsed with ultrapure water for 1 minute, and then dried to form a pattern on a glass substrate on which a chromium film was formed by HMDS treatment. At this time, the amount of exposure required to completely dissolve the gap and pattern of the 3. Ομιη line and the gap (10 to 1) was investigated. The sensitivity is listed in Table 1. When the enthalpy is 2000 J/m2 or less, the sensitivity can be considered to be good, and when it is 1700 J/m2 or less, the sensitivity can be considered to be excellent. (3) Evaluation of development margin e The glass in which the chromium film was formed was subjected to HMDS treatment in the same manner as in the above "(2) Evaluation of sensitivity". On the glass on which the chrome film was formed after the HMDS treatment, the above-mentioned radiation-sensitive resin composition (S-1) was applied by a slit die coater ("TR632105-CL"), and the pressure reached was set to i〇〇pa. After removing the solvent under vacuum drying, it was prebaked at 90 ° C for 2 minutes to form a coating film having a film thickness of 3.0 μm. The ΜΡ Α — 600 FA exposure machine manufactured by Canon was passed through with 3 · 0 μm The line and gap (10 to 1) pattern of the mask is exposed to the exposure film corresponding to the sensitivity 测定 measured in "(2) Sensitivity Evaluation" on -50-201033737, and then, using Table 1 The hydrogen v-ammonium aqueous solution of the indicated concentration was developed with a development time as a variable, and developed under a flow spread of 25 t. Next, it was subjected to ultrapure water for 1 minute and then dried, and chromium formation was formed after treatment with HMDS. At this time, the preferred development time required to make the line width of the line 3.0 μη is listed in Table 1. And, when the development is continued from the optimum development, the measurement is continued until the 3. Ομπι line/pattern is peeled off. This time is listed as the development margin 1. When the 値 is 30, the development margin can be considered as good. (4) Evaluation of solvent resistance on a 550x650 mm chrome-plated glass, produced by Tokyo Chemical Industry Co., Ltd., model number TR632105 - The above-prepared radiation sensitive resin composition (S - 1 ) was set to 100 Pa, and the solvent was removed under vacuum, and then at 90 ° C to form a coating film. Using an MPA machine manufactured by Canon, The coating film was heated at 2200 ° C for 1 hour at a cumulative irradiation amount of 9000 J/m 2 to form a cured film having a film thickness of 3.0 μm formed thereon. Here, the obtained cured film was measured. Film thickness (Τ1). Then, the chrome film glass substrate of the cured film was immersed at a temperature of 7 ° C for 20 minutes, and the film thickness (t1) of the cured film was measured again, resulting in a film thickness change rate {|tl- Tl|/Tl}xl00 [%]. The coating oxidized tetramethyl coating method is applied in: running water, the filming time of the film is the time of the most time, and when the film is over, the coating is applied by the slit die. CL") coated with a pressure of pre-baked 2 points 600FA exposure light, then glass in the chrome film The immersion results will be calculated from the immersion results listed in Table-51-201033737. 1. When the enthalpy is 5% or less, the solvent resistance can be considered to be good. (5) Evaluation of heat resistance and the above "( 4) Evaluation of Solvent Resistance In the same manner, a cured film having a film thickness of 3.Ομη was formed on the glass on which the chromium film was formed. The film thickness (Τ2) of the cured film obtained here was measured. Then, the curing was formed. The chrome-plated glass substrate of the film was placed in a clean oven. After additional heating at 240 ° C for 1 hour, the thickness (t2) of the cured film was measured again, and the film thickness change rate caused by additional heating was calculated {|t2 - Τ 2| / Τ2}χ100 [%]. The results are shown in Table 1. When the enthalpy is 5% or less, the heat resistance can be considered to be good. (6) Evaluation of transparency In the above "(4) Evaluation of solvent resistance", a glass substrate "NA35 (manufactured by NH Techno Glass Co., Ltd.)" of 550 x 650 mm was used instead of the chromium film. The same operation was carried out except for the glass substrate to form a cured film on the glass substrate. Using a spectrophotometer "150-20 type double beam (manufactured by Hitachi, Ltd.), a glass-glass substrate having no protective film was used as a reference, and the light transmittance of the glass-based raft having the cured film was measured in the wavelength range of 400 to 800 nm. The lowest transmittance at this time is shown in Table 1. When the enthalpy is 90% or more, the transparency can be considered to be good. (7) Evaluation of film thickness uniformity and the above "(6) Evaluation of transparency Similarly, a cured film was formed on the glass substrate. The film thickness was measured at 20 measurement points of the cured film, and film thickness uniformity was obtained according to the following formula. Film thickness uniformity (%) = (coating film thickness) The maximum uniformity is 値100/((the average thickness of the coating film at 20 points) χ2) -52- 201033737 If the uniformity of the coating film thickness obtained in this way is 1% or less, the uniformity can be considered to be good. The above 20 measurement points are determined as follows: that is, the range from the long side and the short side of the substrate (550 x 650 mm) is inwardly 50 mm, and the inner area (4 5 Ox 5 50 mm) is used as the measurement area. In the area, on the straight line in the long side direction and the short side direction, Do not determine 10 points (20 points in total) every 40 mm, and use it as a measurement point. (8) Evaluation of relative dielectric constant The surface is flattened by polishing with a sisal polishing wheel (hemp polishing wheel) On the SUS 304 substrate, the above-mentioned radiation-sensitive resin composition (S-1) was applied by a spin coating method, and the pressure reached was set to 100 Pa, and the solvent was removed under vacuum, followed by prebaking at 90 °C. In minutes, a coating film having a film thickness of 3.0 μm was formed. The resulting coating film was exposed to a cumulative irradiation amount of 9000 J/m 2 using an MPA-600FA exposure machine manufactured by Canon, and the substrate was placed in a clean oven. After heating at 220 ° C for 1 hour, a cured film was formed on the SUS substrate, and a Pt/Pd electrode pattern was formed on the cured film by a vapor deposition method to prepare a sample for measuring a dielectric constant. The relative dielectric constants of the HP 1 645 1 B electrode and the HP 4284A precision LCR meter manufactured by Yokogawa Hewlett-Packard Company were measured by the CV method at a frequency of 10 kHz. The results are shown in Table 1. When the 値 is 3.9 or less, the dielectric constant can be determined Examples 2 to 7 and Comparative Examples 1 to 3 [Preparation of Radiation-sensitive Resin Composition] -53- 201033737 In Example 1, the types and amounts of the respective components other than the radiation-sensitive resin composition were respectively The radiation sensitive resin compositions (S - 2) to (S - 7) and (s - 1) to (S-3) were prepared in the same manner as in Example 1 except as shown in Table 1. Evaluation was carried out using these compositions. B-1 as compound (B) used in these examples and comparative examples is 4,4'-[1-[4-[1-[4-hydroxyphenyl]-1-methylethyl] A condensate of phenyl]ethylene]bisphenol (1·〇mol) and 1,2-naphthoquinonediazide-5-sulfonyl chloride (2.0 mol). In Comparative Examples 1 and 2, the following surfactant was used in place of the copolymer (C) » c-1 (Comparative Example 1): Polyoxyalkylene surfactant (produced by Dow Coming Toray Co., Ltd.) Trade name: SH — 193). C-2 (Comparative Example 2): Fluorine-based surfactant (ΝΕΟ S (manufacturing), trade name: FTERGENT 222F) Further, in Comparative Example 3, the copolymer (C) and the surfactant were not used. [Evaluation of Performance as Interlayer Insulating Film] In Example 1, except that the above-described radiation-sensitive resin compositions (S-2) to (S-7) and (s-1) to (s-3) were respectively used. Various evaluations were carried out in the same manner as in Example 1 except that the radiation sensitive resin composition (S-1) was used. The evaluation results are shown in Table 1. -54 - 201033737

實施例7 •( 1 < 8 4 Β — 1 1 〇 0.50 1 〇 良好 0.40 1650 Ο CS CN ON 0.58 〇S 實施例6 1—Η 1 < 8 Γ·Η Β-1 寸 1 U 0.50 1 〇 良好 0.40 1680 § VJl CS CN) Os un ΓΟ 實施例5 Α—2 8 1 Η Β —1 r—Η 1 u 0.50 1 〇 良好 :2.38 1_ 1680 Ο CS (N w-» as 0.60 \〇 實施例4 1 < 8 τ—1 Β-1 ! • Η ί U 0.30 1 〇 良好 ί 0.40 1680 § Ο CS CN v〇 ON οο ^Γί ο VO 實施例3 1 <: s ι Η Β — 1 C-3 0.50 1 〇 良好 0.40 1690 g Ο <N 05 ON ί 0.73 vy-> cn 實施例2 1 < 8 r-H Β-1 C-2 0.50 1 〇 良好 0.40 1650 g ο CN CS V-) ON ι—Η VO 實施例1 1—Η t C 8 »—Η Β —1 产Η 1 U 0.50 1 〇 良好 1 ! 0.40 1腦 g CN CnJ as 0.62 un 魅 W 用量(質量份) 駿 P 用量價量份) 職 0w]| m 用量(質量份) Μ P 用量(質量份) 顯影液濃度(質量%) 最佳顯影時間(秒) i顯影裕度(秒) 丨麟變化率W mmmimc%) 1- 透明性(%) 膜厚均一性(%) 相對介電常數 擊 Ite 擊 Ifc 顯 擊 擊 ti 紲 m 铝 & 1 ιϋηπΐ ιρτ fQ ύ S m m m 5Γ <- M ¥ I m m 齡 跡 嵌 胆 m I m 鼴 m is m m ΦΚ m 胆 - cn' S in' ΚΟ bo 201033737 表2 Ο Ο 比較例1 比較例2 比較例3 共聚物(A) 麵 A-1 A— 1 A—1 用量慣量份) 100 100 100 化潍(B) 麵 B-1 B-1 B-1 用量(質量份) 30 30 30 共聚物(C) 画 — — — 用量(質量份) 0 0 0 表面活性劑 麵 c-1 c-2 — 用量(質量份) 0.30 0.30 0 ⑴塗膜的外觀評價 稍稍不合格 不合格 不合格 ⑵敏感度評價 顯影液澳度(質量%) 0.40 0.40 0.40 敏感度(J/m2) 1740 1740 1710 ⑶顯影裕度評價 最佳顯影時間(秒) 80 80 80 ⑷瞧劑性評價 膜厚變化率(%) 2 2 3 (5)耐熱性評價 2 2 2 ⑹透明性而 透明性(%) 95 95 95 (7)膜厚均H4評價 膜厚均一性(%) 1.33 2.50 4.86 ⑻相對介電常數的評價 相對介電常數 3.5 3.5 3.5 實施例8~10 在實施例1中,在將(Α)共聚物、(Β)化合物和(C)共聚 物混合後,添加溶劑之前,相對於1 00質量份共聚物(A), 分別在實施例8進一步添加2質量份1,3,5-三(3’ ,5’ -二Example 7 • (1 < 8 4 Β - 1 1 〇 0.50 1 〇 good 0.40 1650 Ο CS CN ON 0.58 〇S Example 6 1 - Η 1 < 8 Γ · Η Β - 1 inch 1 U 0.50 1 〇 Good 0.40 1680 § VJl CS CN) Os un 实施 Example 5 Α—2 8 1 Η Β —1 r—Η 1 u 0.50 1 〇 Good: 2.38 1_ 1680 Ο CS (N w-» as 0.60 〇Example 4 1 < 8 τ -1 Β-1 ! • Η ί U 0.30 1 〇good ί 0.40 1680 § Ο CS CN v〇ON οο ^Γί ο VO Example 3 1 <: s ι Η Β — 1 C-3 0.50 1 〇 good 0.40 1690 g Ο <N 05 ON ί 0.73 vy-> cn Example 2 1 < 8 rH Β-1 C-2 0.50 1 〇 Good 0.40 1650 g ο CN CS V-) ON ι— VO VO Example 1 1—Η t C 8 »—Η Β —1 Calving 1 U 0.50 1 〇Good 1 ! 0.40 1 Brain g CN CnJ as 0.62 un Charging W Usage (mass) Jun P Price and Quantity) Job 0w]| m Dosage (parts by mass) Μ P Dosage (parts by mass) Developer concentration (% by mass) Optimum development time (seconds) i Development margin (seconds) Kirin change rate W mmmimc%) 1- Transparency (%) film thickness uniformity (%) relative dielectric constant Click on Ife to strike ti 绁m Aluminum & 1 ιϋηπΐ ιρτ fQ ύ S mmm 5Γ <- M ¥ I mm Age intrusion m I m 鼹m is mm ΦΚ m 胆- cn' S in' ΚΟ bo 201033737 Table 2 Ο Ο Comparative Example 1 Comparative Example 2 Comparative Example 3 Copolymer (A) Surface A-1 A-1 A-1 The amount of inertia is 100 100 100 潍 (B) Surface B-1 B-1 B- 1 Dosage (part by mass) 30 30 30 Copolymer (C) Draw — — — Dosage (part by mass) 0 0 0 Surfactant face c-1 c-2 — Dosage (part by mass) 0.30 0.30 0 (1) Appearance of the film Evaluation is slightly unqualified, unqualified, unqualified (2) Sensitivity evaluation Developer's degree (% by mass) 0.40 0.40 0.40 Sensitivity (J/m2) 1740 1740 1710 (3) Development margin evaluation Best development time (seconds) 80 80 80 (4)瞧Formulation evaluation film thickness change rate (%) 2 2 3 (5) Heat resistance evaluation 2 2 2 (6) Transparency and transparency (%) 95 95 95 (7) Film thickness average H4 Evaluation film thickness uniformity (%) 1.33 2.50 4.86 (8) Relative dielectric Evaluation of Constant Relative Dielectric Constant 3.5 3.5 3.5 Examples 8 to 10 In Example 1, after mixing the (Α) copolymer, the (Β) compound, and the (C) copolymer, before adding the solvent, relative to 100 A part by mass of the copolymer (A), and further added 2 parts by mass of 1,3,5-tris (3', 5'-di in Example 8

第三丁基-4’ -羥基苄基)異氰尿酸(商品名“ADK STAB AO — 20” ,由ADEKA(股)生產),在實施例9中進一步添加2 -56- 201033737 質量份1,3,5-三甲基-2,4,6-三(3,5-二第三丁基-4-羥基苄基) 苯(商品名 “ADK STAB AO — 330” ,由 ADEKA(股)生產), 在實施例10進一步添加2質量份二(十八烷基)季戊四醇二 亞磷酸酯(商品名“ ADK STAB PEP — 8” ’由ADEKA(股)生 產)。除此以外,與實施例1同樣地調製感放射線性樹脂組 成物(S - 8)~(S — 10),並進行評價。 結果,在所有實施例8〜10中,塗膜的外觀均爲“良好 ”,敏感度、顯影裕度、耐溶劑性、耐熱性、透明性和相 對介電常數均顯示與實施例1相同的値。並且,膜厚均一 性,在實施例8中爲0.4 5 %,實施例9中爲0.4 8 %,實施例 1 0 中爲 0.4 3 %。 【圓式簡單說明】 無。 【主要元件符號說明】 無。Tert-butyl-4'-hydroxybenzyl)isocyanuric acid (trade name "ADK STAB AO-20", produced by ADEKA Co., Ltd.), further added in Example 9 to 2-56-201033737 parts by mass 1, 3,5-trimethyl-2,4,6-tris(3,5-di-t-butyl-4-hydroxybenzyl)benzene (trade name "ADK STAB AO-330", produced by ADEKA) Further, 2 parts by mass of di(octadecyl)pentaerythritol diphosphite (trade name "ADK STAB PEP-8" 'produced by ADEKA Co., Ltd.) was further added to Example 10. In the same manner as in Example 1, the radiation sensitive resin compositions (S-8) to (S-10) were prepared and evaluated. As a result, in all of Examples 8 to 10, the appearance of the coating film was "good", and the sensitivity, development margin, solvent resistance, heat resistance, transparency, and relative dielectric constant were all the same as in Example 1. value. Further, the film thickness uniformity was 0.45% in Example 8, 0.48% in Example 9, and 0.43% in Example 10. [Circular Simple Description] None. [Main component symbol description] None.

-57--57-

Claims (1)

201033737 ' 七、申請專利範圍: 1. 一種感放射線性樹脂組成物,其特徵在於含有: (A) 鹼可溶性樹脂; (B) l,2-醌二疊氮化合物;以及 (C) 含有(cl)下述式(1°)表示的化合物、 (〇2)下述通式(2°)表示的化合物和 (c 3)具有下述通式(3)表示的基團的聚合性不飽和化合物 的聚合性不飽和化合物的共聚物, CH2 = CR1COO-CaH2a-CpF2p + 1 (1°) (式(1°)中,R1爲氫原子或甲基,a爲0〜6的整數,β 爲1〜20的整數), CH2 = CR2COO-(CrH2y-〇)a-R3 (2°) (式(2°)中,R2爲氫原子或甲基,R3爲碳原子數爲1~12 的烷基,γ爲2或3, a爲重複單元數,其平均數値爲1〜30),201033737 ' VII. Patent application scope: 1. A radiation sensitive resin composition characterized by: (A) an alkali-soluble resin; (B) 1,2-quinonediazide compound; and (C) containing (cl) a compound represented by the following formula (1°), (〇2) a compound represented by the following formula (2°), and (c3) a polymerizable unsaturated compound having a group represented by the following formula (3); Copolymer of a polymerizable unsaturated compound, CH2 = CR1COO-CaH2a-CpF2p + 1 (1°) (In the formula (1°), R1 is a hydrogen atom or a methyl group, a is an integer of 0 to 6, and β is 1 An integer of -20, CH2 = CR2COO-(CrH2y-〇)a-R3 (2°) (In the formula (2°), R2 is a hydrogen atom or a methyl group, and R3 is an alkyl group having 1 to 12 carbon atoms. , γ is 2 or 3, a is the number of repeating units, and the average number 値 is 1 to 30), R4R4 Ο Λ R5 1 R7 I 1 Si 0— 1 Si (3) R6 R8 (式(3)中,R4、R5、R6、R7和R8各自獨立地爲碳原子 數爲1〜2 0的烷基、苯基或下述通式(4)表示的基團,b爲 0〜3的整數), -58- 201033737 / R10 \ R10 h \ i R9-f-i;i—Ο—]—Si一O- (4) \ R11 Λ R11 (式(4)中,R9、R1G和R11各自獨立地爲碳原子數爲 1~2〇的烷基或苯基,c爲0~3的整數)。 2 .如申請專利範圍第1項之感放射線性樹脂組成物,其中 上述(C)共聚物是除了上述化合物(cl)、化合物(c2)和化 〇 合物(c3)以外還含有(c4)具有碳原子數爲1~8的烷基的聚 合性不飽和化合物的聚合性不飽和化合物的共聚物。 3 .如申請專利範圍第2項感放射線性樹脂組成物,其中上 述(C)共聚物是除了上述化合物(cl)、化合物(c2)、化合 物(e3)和化合物(c4)以外還含有(c5)—分子中具有2個以 上不飽和鍵的聚合性不飽和化合物的聚合性不飽和化合 物的共聚物。 φ 4 ·如申請專利範圍第3項之感放射線性樹脂組成物’其中 上述化合物(cl)爲下述式(1)表示的化合物’上述化合物 (c2)爲下述通式(2)表示的化合物,且(C)共聚物是由 25〜35質量%化合物(cl)、20~30質量%化合物(c2)、15〜2〇 質量%化合物(c3)、25〜35質量%化合物(c4)和1 ~5質量% 化合物(c 5)組成的聚合性不飽和化合物的共聚物’ CH2 = CR1COO-CH2CH2C8Fi7 ⑴ 式(1)中,R1與上述式(1°)中定義相同, -59- 201033737 CH2 = CR2C00-(C2H40)aR3 (2) (式(2)中,R2和R3分別與上述式(2。)中的定義相同, 重複單元數a的平均數値爲4〜12)。 5. 如申請專利範圍第1至4項中任一項之感放射線性樹脂 組成物,其中(A)鹼可溶性樹脂是含有(ai)選自不飽和羧 酸和不飽和羧酸酐構成的群組中的至少一種和(a2)具有 環氧基的聚合性不飽和化合物的單體的共聚物。 6. —種層間絕緣膜’其特徵在於由如申請專利範圍第1至5 〇 中任一項之感放射線性樹脂組成物形成。 7. —種層間絕緣膜的形成方法,其特徵在於按照以下順序 包括以下步驟: (1) 將如申請專利範圍第項之1至5任一項所述的感放射 線性樹脂組成物塗布在基板上形成塗膜的步驟, (2) 對該塗膜的至少一部分照射射線的步驟, (3) 顯影步驟,和 (4) 加熱步驟。 8. 一種層間絕緣膜,其特徵在於由如申請專利範圍第7項 之方法形成》 -60- 201033737 四、指定代表圖: (一) 本案指定代表圖為:無。 (二) 本代表圖之元件符號簡單說明: 〇 以、、 ❹ 五、本案若有化學式時,請揭示最能顯示發明特徵的化學式: 姐〇 參Ο Λ R5 1 R7 I 1 Si 0— 1 Si (3) R6 R8 (In the formula (3), R 4 , R 5 , R 6 , R 7 and R 8 are each independently an alkyl group having 1 to 20 carbon atoms, and benzene. Or a group represented by the following formula (4), b is an integer of 0 to 3), -58- 201033737 / R10 \ R10 h \ i R9-fi; i - Ο -] - Si - O - (4 \ R11 Λ R11 (In the formula (4), R9, R1G and R11 are each independently an alkyl group or a phenyl group having 1 to 2 carbon atoms, and c is an integer of 0 to 3). 2. The radiation sensitive resin composition according to claim 1, wherein the (C) copolymer contains (c4) in addition to the above compound (cl), compound (c2) and chemical complex (c3). A copolymer of a polymerizable unsaturated compound having a polymerizable unsaturated compound having an alkyl group having 1 to 8 carbon atoms. 3. The radiation sensitive linear resin composition according to claim 2, wherein the (C) copolymer is contained in addition to the above compound (cl), compound (c2), compound (e3) and compound (c4) (c5) a copolymer of a polymerizable unsaturated compound having a polymerizable unsaturated compound having two or more unsaturated bonds in a molecule. Φ 4 The radiation-sensitive resin composition of the third aspect of the invention is in which the compound (cl) is a compound represented by the following formula (1): the compound (c2) is represented by the following formula (2) The compound, and the (C) copolymer is composed of 25 to 35 mass% of the compound (cl), 20 to 30 mass% of the compound (c2), 15 to 2 mass% of the compound (c3), and 25 to 35 mass% of the compound (c4). And a copolymer of a polymerizable unsaturated compound composed of 1 to 5 mass% of the compound (c 5) 'CH2 = CR1COO-CH2CH2C8Fi7 (1) In the formula (1), R1 is the same as defined in the above formula (1°), -59- 201033737 CH2 = CR2C00-(C2H40)aR3 (2) (In the formula (2), R2 and R3 are the same as defined in the above formula (2), and the average number of repeating units a is 4 to 12). 5. The radiation sensitive resin composition according to any one of claims 1 to 4, wherein (A) the alkali-soluble resin is a group comprising (ai) selected from the group consisting of unsaturated carboxylic acids and unsaturated carboxylic anhydrides. A copolymer of at least one of (a2) a monomer having a polymerizable unsaturated compound having an epoxy group. 6. An interlayer insulating film' characterized by being formed of a radiation-sensitive resin composition according to any one of claims 1 to 5 of the patent application. 7. A method of forming an interlayer insulating film, comprising the steps of: (1) coating a radiation sensitive resin composition according to any one of claims 1 to 5 on a substrate a step of forming a coating film, (2) a step of irradiating at least a portion of the coating film, (3) a developing step, and (4) a heating step. 8. An interlayer insulating film which is characterized by the method of claim 7 of the patent application. -60-201033737 IV. Designation of representative drawings: (1) The representative representative of the case is: None. (2) A brief description of the symbol of the representative figure: 〇, , ❹ 5. If there is a chemical formula in this case, please reveal the chemical formula that best shows the characteristics of the invention:
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