TW201032340A - A silicon quantum dot near-infrared phototransistor detector - Google Patents
A silicon quantum dot near-infrared phototransistor detector Download PDFInfo
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- TW201032340A TW201032340A TW098106085A TW98106085A TW201032340A TW 201032340 A TW201032340 A TW 201032340A TW 098106085 A TW098106085 A TW 098106085A TW 98106085 A TW98106085 A TW 98106085A TW 201032340 A TW201032340 A TW 201032340A
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
- H01L31/113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor
- H01L31/1136—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor the device being a metal-insulator-semiconductor field-effect transistor
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035236—Superlattices; Multiple quantum well structures
- H01L31/035254—Superlattices; Multiple quantum well structures including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System, e.g. Si-SiGe superlattices
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/773—Nanoparticle, i.e. structure having three dimensions of 100 nm or less
- Y10S977/774—Exhibiting three-dimensional carrier confinement, e.g. quantum dots
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/902—Specified use of nanostructure
- Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/902—Specified use of nanostructure
- Y10S977/962—Specified use of nanostructure for carrying or transporting
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- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Description
201032340 六、發明說明： 【發明所屬之技術領域】 本發明係有關於-财量子點近紅外光電晶體彳貞測器尤 指-種製程低溫且快速’能與目前半導體工業相容亦可同時表 現出極佳之近紅外光光電響應特性之純梦且具梦量子點超晶 格結構（Si-QDSL，0r„c_Si/MS)之近紅外光電晶體偵測器。 【先前技術】 © 祕地球上最豐富之元素，且辨導體工雜長久之發展 已成為一巨大且完整而獨立之技術領域，因此矽基 (Silicon-Base)材料在非傳統應用領域中，如近來極受褐目之 光電，尤以石夕基奈米材料，包括有奈米多孔梦（p_s s出咖） 及由二氧化矽（Si02)薄膜、氧化矽（si0x<2 〇)薄膜與非晶 矽（a_Sl:H )薄膜鑲嵌或覆蓋之矽奈米晶粒（Silicon Nan〇CiySta〇 ’以及矽奈米量子點（Qu_mD〇t)等而奈米 孔洞二氧化矽（Mesop〇_ Silica，MS)則係近年來從極引人 注目之眾多奈米材料中，由於具有75%之高孔隙率 (Porosity)、極大之表面積（〜1〇〇〇m2/g)及可調之孔洞尺寸 大小（2〜lOnm)，可利用其奈米尺寸之規則排列孔道組裝生 成量子點及量子線（Quantum Wire)。目前已有許多研究團隊 朝此方向研究’期望能獲得新之光與電效應等物理特性，更希 望能以此矽基奈米材料取代HI _V族半導體材料而達到節省資 源及降低成本之目的。 雖然矽奈米結構新奇之光學性質吸引了許多目光集中在 201032340 其能帶間（Interband)性質，唯其能帶内（Intra_Band)光學 性質幾乎被忽視。近年來，量子點之能帶内吸收（Intra_Band Absorption)由於係發生在紅外光譜範圍中，可非常適合發展 紅外光偵測器（IPs)，因此吸引了相當大地注意；再者，量子 點紅外光偵測器亦可以克服量子井紅外光備測器一個主要缺 點，即其在一般入射光源照射下並不靈敏之缺點；然而，能帶 内之量子躍遷之研究目前幾乎僅限於瓜_v族系統，由於瓜_v 型紅外光偵測器長久以來存在著製程相容性之問題，即其所使 〇 用之材料對矽半導體製程易產生污染問題，不僅成本高且無法 相容於矽半導體工業。此外，量子井或其他如矽/錯量子點產 生方式多需搭配精密之微影、餘刻或其他高溫且耗時之製程技 術，而在經歷如此繁複製程後亦仍然無法產生控制良好、高密 度與三維分佈之量子點。 目前近紅外波段（1.3〜1.5μιη)光偵測器發展普遍應用在 火炎監測、污染分析、醫學儀器、天文觀測、光通訊甚至軍事 上等領域’其中尤以能與矽積體線路整合之矽鍺光偵測器最受 Ο 人嘱目。有鑑於此，史丹佛（Stanford)大學提出了一種新之 金氧半場效電晶體（Metal-Oxide-Semiconductor Field-Effect
Tiransistoi·，MOSFET)光電開關。該裝置即係利用鍺為閘極， 因鍺具有0.8電子伏特（eV)能隙，當照射13〜丨5μπι之近 紅外光波段時，並在外加電壓下，即可造成能帶彎曲且光激發 產生電子電洞對於鍺閘極中，使正電荷累積在Ge_Si〇2介面而 吸引電子靠近二氧化梦-碎界面，以增高源、汲極間之導通性， 進而可放大光電流於汲極輸出。由此可知，基於錯之能階在 0.8eV，所以能吸收i.55pm光，因此可實現光通訊電晶體光偵 4 201032340 測器。然而，由於鍺材料不若矽基材料般製程技術成熟、成本 低、製程簡單且應用性高，其相對地較為昂貴且與許多介電材 料或矽之介面特性較差，因此整合成電晶體光偵測器較為困 難。另外’雖有施敏教授等人利用多孔矽製作1.55pm紅外波 段之光偵測器’並於2001在OPTICS LETTERS上發表了相關 論文，然而其紅外光波段量測到也只有〇·1安培/瓦（A/W)左 右之光電流響應’同時其也含有不易整合於元件之缺點。 ❺
由於紅外光偵測器已經為成熟且需求量極大之產品，目前 已廣泛地應用在生物醫學至光儲存等方面都有所貢獻。雖然矽 材料在晶片之製作等領域非常成功，唯其能隙型態為116¥大 小之間接能隙’因此至今仍無法在光電轉換之領域上有元件程 度之應用。在奈米尺度下，雖然矽材料之電子能階與其粒子大 小之相關性可使其極有可誠為下健代之光電元件；然而， 目前應用最廣泛之細器材料仍為^々族半導體，並且將其 製備成ιπ·ν^外光侧器尚具錢程_及成本高之缺 點°故’-般㈣者縣法符合使用者於實際使料之所需。 【發明内容】 繼她 =明格結構（鄉SL，OTne.s_)之私外光電刪 伯^連Γ上之目的’本發明係一物量子點近紅外光電1 偵測器’細制可調之奈纽洞二氣切 5 201032340 溫、快速以及肢面積製造之脈賊高密度電_助原子層沉 積法(Plasma Assistant Atomie Uyet Chemied Vapor Deposition, PAALD) ’使用奈米結構化石夕基薄膜為閘極介電質作為紅外光 吸收材料，成為三端奈米結構化矽氧閘極電晶體，其包括有一 基板；一設置於該基板上之類羞晶石夕層（Epi_likeSi)，且該類 蟲晶矽層部分區域上係分別具有一源極及一汲極；以及一設置 於該類磊晶矽層上之閘極介電質，其中，該閘極介電質係包括 有兩緩衝層及一夾於該兩緩衝層中間之具矽量子點奈米孔洞 ❹ 二氧化矽層（Si Nanocrystal / Mesoporous Silica，nc-Si/MS )，並 在該閘極介電質上設有一閘極。藉此，利用矽薄膜奈米技術製 造之純珍且具石夕量子點超晶格結構（Si_QD SL，or nc-Si/MS ) 之近紅外光電晶體偵測器，除了具有製程低溫、快速以及可與 目刚半導體工業相容外，亦具備優越之近紅外通訊波段增益光 電響應。 【實施方式】 ® 請參閱『第1圖〜第3圖』所示，係分別為本發明矽量子 點紅外光一極體偵測器一實施例之剖面示意圖、本發明石夕量子 點紅外光偵測器對紫外-近紅外波段光之響應頻譜示意圖、及 本發明矽奈米孔洞二氧化矽層之能階示意圖。如圖所示：本發 明首先係將此具有矽奈米孔洞二氧化矽作為一矽量子點紅外 光二極體偵測器。其係利用孔徑可調且分佈均勻之奈米孔洞二 氧化矽作為模板，搭配脈衝式高密度電漿輔助原子層沉積法 (Plasma Assistant Atomic Layer Chemical Vapor Deposition, PAALD) ’於小於4〇0°C之低溫下且於數分鐘内，在此奈米孔 201032340 /同-氧化碎模板中形成二維分佈且界面良好之高密度奈米量 子點陣列，且該奈米量子點陣列係具有極佳之石夕量子點/二氧 切界面、大量之電偶_表_，同時具有册載子穿遂之 極薄二氧化石夕孔壁，因此可在不需使用非發，例如錄（Ge)， 或係瓜々族半導體材料之條件下，即可於近紅外光波段有極 佳之光響應。 ❹ 於-較佳實施例中’可將上述所構成之含梦量子點超晶格 、、。構材料作為歧收層之錢半（Metal_Gxide Sem⑹响麵 M^s)二端光細元件，如第1 ®所示，以本發贿米孔洞 :氧，石夕為模板製作之梦量子點紅外光二極體偵測器丄，此結 糸石夕基板11、-形成於該發基板工工上之具石夕量子點 超晶格結構（Si-QD SL，or㈣祕）工2、以及一形成於該 2量子點超晶格結構i 2上之氧化銦錫層（lndium τώ 層1^〇) 13所構成’且該P型石夕基板11與該氧化銦錫 層13表面上可分別設置一電性連接點丄4、丄 ^^以穿透式電子麵齡析料子_晶格結構工 之尺=，4如?!圖所示，由左下角内嵌圖顯示此奈米量子點 寸為4〜U (nm)，城以三維 維分佈，其密度可達2.5xl_em3。 ^呈&二 —由此含梦量子點超晶格結構材料作為光吸之 =與三端光偵測元件’其係可表現出極佳之近紅外光光電泣 一般二極體侧器之對照曲線2，作為不： 以太故其於近紅外光波段無光電響應；而其中 =作為錢半二端光制元件而言，由響 曲線〜可知’在320〜1900 nm波段皆可觀察到有 7 201032340 流’並在420、560及770 nm之矽量子點紅外光二極體偵測器 其元件之光響應曲線2a可知分別為〇 4、〇.7及0.9安培/瓦 (A/W)，其最高光電轉換效率更可高達16〇%，且反應速度快 於10奈秒（ns)。更值得注意的是，9〇〇〜i 1〇〇nm處有相當明 顯之光電流響應，尤其係在波長為940nm處更高達6 。 而在1300〜1500nm波段’也量測到高達〇2A/w之光電流響 應；而以本材料作為金氧半三端光偵測元件而言，由其所得之 光響應曲線2b (此光響應曲線由曲線6a，Vg=1.2V，Vd= © 3.0V所獲得）亦同樣可知，於近紅外光通訊波段處也可觀察 到有極優異之辨應。因此’本發㈣奈米賴化$基薄膜作 為閘極介電質，藉由其中埋藏直徑為4〜5nm量子點121， 可誘發近紅外光激量子帶缝_遷效應，而錢著光通訊波 長之吸收，以產生明顯光電流效應，並達到純矽近紅外光偵測 器由於本發明之量子點1 2 ;[尺度極小，所以可建立近紅夕卜 波段之量子帶内此隙（Quantum_E任ect Intra Band Transiti〇n )， 使職H遠超過-般量子點光細㈣其内之量子點較大而 〇 僅能應用於粒外光偵測之限制。因此在155〇腦波段中，金 -氧-半三端電晶體光偵測器係可有高達28A/W之響應，不僅 對光儲存、光通訊及光伏特元件有重大助益，且亦明顯優於文 獻報導之鍺量子點光侧器之光電流響應為讀心/w。 此外’該⑦量子點近紅外光工鋪伽⑵i元件在紫外光 照條件下也可展示此元件對紫外光極佳之增益響應。當此石夕量 子點紅外光二極體細器i操作在逆偏屬時，由於該石夕基板i ^形成反轉層’其上之具梦量子點超晶格結構工2會捕獲正電 荷而增強載子由反轉層注入到4極，最終形成該具發量子點 8 201032340 超晶格結構12中產生之光激電流被放大之效應。 ❹ 在此研究中’經由第1圖構成之元件對紫外_近紅外波段 光之響應頻谱，可發現頻譜中1200〜1300nm之波段並沒有明 顯之響應’因此可推斷在1300nm以上之近紅外光響應並不係 由帶尾能態（Band-Tail States)之光學響應所引起。且由第2 圖頻譜中420nm與560nm波段之矽量子點紅外光二極體偵測 器其元件之光響應曲線2a為明顯之偵測峰值，其各自對應之 光子能態能量分別為3.0與2.2電子伏特（eV)，其能差為 〇.8eV，由此對應到之光子釋放波長係約在155〇nm近紅外光 之頻譜範圍左右。因此’係可推斷此近紅外波段光之響應應為 量子帶内能隙效應所造成之，如第3圖所示。 凊參閱第4A圖及第4 B圖』所示，係分別為本發明矽 量子點近紅外光電晶體偵測器一實施例之剖面示意圖、及本發 明石夕量子點近紅外光電晶雜啦-實施例之tem照片圖。 如圖所示：本發明係一種發量子點近紅外光電晶體侧器由 =上述奈綠構化絲光魏層具有好冑· ，故將此 不米結構化德薄膜為閘極介電質作為紅外光吸收材料，成為 二端奈米結構切氧_電㈣（MetaK)xide SemieQnd_ =e_eetT_istQ1;M_T>於一較佳實施例中此石夕量 子點近紅外光電晶體_器3之通道長度為_，寬度為 美f至少包括有一石英（QUartZ)基板3 1、一設置於該 ^八之晶梦層3 2，且該_晶_ 3 2部分區域 曰石々IS :有源極3 4及一汲極3 5、以及-設置於該類磊 :兩緩衝層tm1】3 ’且該閘極介電質3 3係包括 37及一夾於該兩緩衝層36、37中間之 9 201032340 ”矽量子點超自格結構3 8，並在 ，，其中，該間極39係為多 汲極3 5之材質係為終屬。將上述 ;及該 (Transmission Electron Micro 〇 料式電子顯微鏡 4B圖所示。 卿^闕所得之橫截面如第 上述具砍量子點超晶格結構3 8係由-奈米孔洞二氧化 ❹ 該奈米孔洞二氧化㈣孔道内壁上之奈米微晶 冋密度i:子點_所構成’該絲微晶為奈麵祕，且該 具梦量子點超晶格結構3 8於魏近紅外光之丨聰〜 1900nm波絲關之杨後會產生-光電響應。
基於矽對於13GG〜155Gnm波段而言係透明之，所以發在 此段係不魏，其主魏由切量子點之絲孔輒化頻合 材料所吸收，即該具發量子點超晶格結構3 8。⑽卜來之紅外 光源則相當於一附加之閘極電壓來整流該汲極3 5端因此照 光時會造成臨界電壓（Threshold Voltage, Vtii)改變，進而可 放大光電流於該汲極3 5輸出。因此本發明之石夕量子點近紅外 光電晶體偵測器係可在近紅外波段展示極佳之光電響應，以達 到提供一純梦材料之近紅外光偵測器。 請參閱『第5圖〜第6圖』所示，係分別為本發明含發量 子點電晶體偵測器對不同波長及不同能量光線照射下其Id_Vg 特性表現比較示意圖、及本發明於1330/1550nm光源下不同問 極電壓下其Id-Vd關係比較以及光響應示意圖。如圖所示··其 係將第4 A圖之矽量子點近紅外光電晶體偵測器分別在 1550、1310及532nm雷射光照下測量各自之id_Vg特性表現 與Id-Vd關係。其中，於第5圖上層係顯示，以一無雷射光照 201032340
射之暗電流曲線4為對照組，在汲極電壓（Vd)設定為0.1 V 下，經上述三種波長以雷射功率4nW/pm2光照後，可各自量 測得光電響應電流曲線4a、4b及4c;於第5圖下層係顯示， 經1550nm波長以雷射功率4η\^/μιη2光照後所得之光電響應 電流曲線4a及以雷射功率2nW/nm2光照後所得之光電響應 電流曲線4d。而於第6圖左邊係顯示，以一無雷射光照射之 暗電流曲線5為對照組’於閘極電壓（Vg)設定為1.6及1.2V 下’經上述1550、1310及532nm波長以雷射功率4nW/nm2 〇 之光照後，可各自量測得光電響應電流曲線5a、5b及5c與 5d、5e及5f;於第6圖右邊係顯示，上述三種1550、1310 及532nm波長於Vg=1.6V及Vd=3.0V之操作電壓下，在雷射 功率為41^化1112之光照後，所得之光電響應曲線6&、615及 由上述可知，在1310nm及1550nm波長以雷射功率為 4nW&m2之光照下，會於奈米結構化矽基薄膜中產生電子電 洞對’而此奈米結構匕矽基薄膜中之矽氧介面能階會捕獲正電 荷而增強閘極電壓（+VG)於碎基底增強電子反轉層，經由電 晶體電流增益機制放大光電響應及光激電流，因此在131〇〜 1550nm光通訊波長可展示高達2.8A/W之光電響應。 藉此’本發明在近紅外波段係展示極佳之光電響應。基於 量子點之能帶内吸收係發生在近紅外光譜範圍，因此非常適合 發展近紅外光偵測器；此外，本發明量子點近紅外光偵測器亦 可克服量子井紅外光偵測器在一般入射光源照射下並不靈敏 之主要缺點。 請參閱『第7圖』所示，係本發明與其他相關研究成果之 11 201032340 比較示意圖。如圖所示：係本發明比較目前有名之紅外光偵測 器論文，可明顯發現此利用脈衝式高密度電漿辅助原子層化學 氣相沉積法’製造具高密度之發量子點超晶格（Si_QDsL)或 矽量子點/二氧化矽陣列（nC_Si/MS)之近紅外光電晶體偵測 器，其不僅可在近紅外波段展示極佳之光電響應，同時更放大 其光電響應電流，除了性能優異及可同時具備梦基紅外光_ 器與量子點型偵測器之紅外光光電響應特性優點外，更能克服 ιπ-_ν型紅外光偵測器製程不相容於矽製程技術性，而達到節 ❹ 省·及降低成本之目的。婦造上係使用與超大型積體電路 (Very Large Scale Integrated Circuit，VLSI)技術相容之旋轉塗 佈、及脈衝式高密度電漿辅助原子層沉積法等低溫、快速製 程’且完全能整合於發基材料，除了可與目前半導體工業相容 彳’聘亦絲現出極佳之近紅外光光電響麟性，因此對於 光儲存、光通訊及光伏特元件係有重大助益。 綜上所述，本發明係一種矽量子點近紅外光電晶體偵測 器’可有效改善習用之種種缺點，建構之三維奈米純石夕碎量子 ❹‘點超晶格之近紅外光電晶體偵測器，係利用低溫、快速以及易 大面積製ie之脈衝式電漿技術，使用完全與梦半導體工業相容 之材料與製程，可表現出極佳之紅外軌波段增益光電響應， 因此對於光儲存、光通訊及光雜元件係有重切益，進而使 本發明之産生能更進步、更實用、更符合使用者之所須，確已 符合發明專利申請之要件’爰依法提出專利申請。 准以上所述者，僅為本發明之較佳實施例而已，當不能以 此限疋本發明實施之範圍；故，凡依本發明申請專利範圍及發 明說明書内容所作之簡單的等效變化與修飾，皆應仍屬本發明 12 201032340 專利涵蓋之範圍内。 【圖式簡單說明】 體偵測器—實施例 第1圖，係本發明矽量子點紅外光二極 之剖面示意圖。 ’係本發:子脉外光侧器對紫外近 波段光之響應頻譜示意圖。 第2圖 第3圖，係本發明奈米孔洞二氧化销之能階示意圖。
Q
第4 A圖’係本發明矽量子點近紅外光電晶體偵測器一實 施例之剖面示意圖。 第4 B圖，係本發明矽量子點近紅外光電晶體偵測器一實 施例之TEM照片圖。 第5圖’係本發明含矽量子點電晶體偵測器對不同波長及 不同能量光線照射下其Id-Vg特性表現比較示意 圖0 第6圖，係本發明於1330/1550nm光源下不同閘極電壓下 其Id-Vd關係比較以及光響應示意圖。 第7圖，係本發明與其他相關研究成果之比較示意圖。 【主要元件符號說明】 矽量子點紅外光二極體偵測器1 矽基板1 1 具矽量子點超晶格結構12 量子點121 氧化銦錫層13 電性連接點14、15 13 201032340 對照曲線2 光響應曲線2a 矽量子點近紅外光電晶體偵測器3 石英基板31 類磊晶矽層3 2 閘極介電質3 3 源極3 4 没極3 5 〇 緩衝層3 6、3 7 具矽量子點超晶格結構3 8 閘極3 9 暗電流曲線4 光電響應電流曲線4 a〜4 d 暗電流曲線5 光電響應電流曲線5 a〜5 f 光電響應曲線6 a〜6 c 〇
Claims (1)
- 201032340 .· 七、申請專利範圍： -量子點近紅外光電晶體偵測器，係以孔洞可調之奈米 雷^作氧切作為模板’藉由絲結構切基薄膜為閘極介 =紅外光吸收材料，成為三端奈米結構化魏問極電 日日骽，其包括有： 一基板； 二類蟲晶韻，係設置於該基板上，且該晶石夕層部 为區域上係分別具有-源極及-汲極； ❹ i極介電質，係設置於該晶销上，包括有兩緩 f s. ίϊπ一夾於該兩緩衝層中間之具⑦量子點超晶格結構 W-QD SL，Gr ne德s) ’並在刻極介電質上設有一閑 極，以及 中、該具♦量子點超晶格結構係由—奈米孔洞二氧化 :成於該奈米孔洞二氧化石夕中孔道内壁上之奈米微晶 =„子點_所構成，該奈米微晶為奈米微晶梦，且 二石夕篁子點超晶格結構於吸收紫外·近紅外光之挪〜謂 不米（nm) S長細社光源後會產生 。 2·:ΠΓ範圍第1項所述之概略 ，其中，該基板係為一石英（Q崎）基板。 、則ί申利範圍第1項所述之梦量子點近紅外光電晶體偵 /、以’其中’該奈米微晶之密度係為25χ1鳴心 •=申範圍第1項所述之梦量子點近紅外光電晶蠢 籍二其中，該量子點陣列係由該料米微晶以三維方式堆 積而成。 5.依據申請專利範圍第上項所述之梦量子點近紅外光電晶體伯 15 201032340 測器’其中，該量子點之直徑為4〜5nm。 6.依據t請專利範圍第1項所述之梦量子點近紅外 測器，其中，該高密度量子點陣列係以脈衝式高密度電聚輔 助原子層化學氣相沉積法⑺asmaA Chemical Vapor Deposition，PAALD )形成。 町沈 7 ·依據申請專利範圍第丄項所述之_ ° 測器，其中，該閘極係為多晶秒。子點近紅外光電晶體偵 ❹16
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| US9030189B2 (en) * | 2011-08-28 | 2015-05-12 | Edward Hartley Sargent | Quantum dot photo-field-effect transistor |
| DE102011089759B4 (de) * | 2011-12-23 | 2014-08-07 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zur Herstellung eines Halbleiterbauelements und Halbleiterbauelement |
| GB201208793D0 (en) | 2012-05-18 | 2012-07-04 | Isis Innovation | Optoelectronic device |
| EP3029696B1 (en) | 2012-05-18 | 2018-11-14 | Oxford University Innovation Limited | Optoelectronic device comprising porous scaffold material and perovskites |
| PL2850669T3 (pl) | 2012-05-18 | 2016-08-31 | Isis Innovation | Urządzenie fotowoltaiczne zawierające Perowskity |
| KR102607292B1 (ko) | 2012-09-18 | 2023-11-29 | 옥스포드 유니버시티 이노베이션 리미티드 | 광전자 디바이스 |
| CN107003201B (zh) | 2014-12-01 | 2019-11-05 | 北陆电气工业株式会社 | 半导体压力传感器装置 |
| KR101714904B1 (ko) * | 2015-10-19 | 2017-03-09 | 경희대학교 산학협력단 | 실리카 나노입자-그래핀 양자점 하이브리드 구조를 이용한 광전자 소자 및 그 제조방법 |
| EP3419050A1 (en) | 2017-06-23 | 2018-12-26 | ams International AG | Radiation-hardened package for an electronic device and method of producing a radiation-hardened package |
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