TW201027617A - Oxidation and cleaning methods for silicone wafers - Google Patents

Oxidation and cleaning methods for silicone wafers Download PDF

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Publication number
TW201027617A
TW201027617A TW98137068A TW98137068A TW201027617A TW 201027617 A TW201027617 A TW 201027617A TW 98137068 A TW98137068 A TW 98137068A TW 98137068 A TW98137068 A TW 98137068A TW 201027617 A TW201027617 A TW 201027617A
Authority
TW
Taiwan
Prior art keywords
wafer
layer
oxide layer
cleaning
solution
Prior art date
Application number
TW98137068A
Other languages
English (en)
Chinese (zh)
Inventor
Esturo-Breton Ainhoa
Keller Steffen
Original Assignee
Ct Therm Photovoltaics Technology Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ct Therm Photovoltaics Technology Gmbh filed Critical Ct Therm Photovoltaics Technology Gmbh
Publication of TW201027617A publication Critical patent/TW201027617A/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Photovoltaic Devices (AREA)
TW98137068A 2008-11-07 2009-10-30 Oxidation and cleaning methods for silicone wafers TW201027617A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE200810056455 DE102008056455B3 (de) 2008-11-07 2008-11-07 Oxidations- und Reinigungsverfahren für Siliziumscheiben

Publications (1)

Publication Number Publication Date
TW201027617A true TW201027617A (en) 2010-07-16

Family

ID=41559614

Family Applications (1)

Application Number Title Priority Date Filing Date
TW98137068A TW201027617A (en) 2008-11-07 2009-10-30 Oxidation and cleaning methods for silicone wafers

Country Status (3)

Country Link
DE (1) DE102008056455B3 (fr)
TW (1) TW201027617A (fr)
WO (1) WO2010052541A2 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110600363A (zh) * 2019-09-18 2019-12-20 武汉新芯集成电路制造有限公司 去除氧化硅的方法及半导体器件的制造方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2955707B1 (fr) * 2010-01-27 2012-03-23 Commissariat Energie Atomique Procede de realisation d'une cellule photovoltaique avec preparation de surface d'un substrat en silicium cristallin
CN102694078A (zh) * 2012-06-16 2012-09-26 成都聚合科技有限公司 一种清洗高倍聚光光伏光电转换接收器模块工艺
CN103341458A (zh) * 2013-06-15 2013-10-09 成都聚合科技有限公司 一种高倍聚光光伏光电转换接收器电路板清洗工艺
CN104384125A (zh) * 2014-10-08 2015-03-04 昆山诃德新能源科技有限公司 一种高倍聚光太阳能光电接收器模块清洗工艺
CN104384126A (zh) * 2014-10-10 2015-03-04 昆山诃德新能源科技有限公司 一种高倍聚光光伏光电转换接收器电路板清洗工艺
KR101846443B1 (ko) * 2017-02-23 2018-04-06 엘지전자 주식회사 태양전지를 위한 산화막 형성 방법
EP4238663A1 (fr) 2022-03-03 2023-09-06 Arva Greentech AG Procédé d'élimination de polluants organiques de surfaces au moyen de persulfates et de persulfonates générés in situ
CN117457549B (zh) * 2023-12-25 2024-04-12 富芯微电子有限公司 一种用于晶闸管管芯生产的表面腐蚀设备

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Publication number Priority date Publication date Assignee Title
DE1514949C3 (de) * 1966-03-26 1975-06-19 Telefunken Patentverwertungsgesellschaft Mbh, 7900 Ulm Verfahren zum Herstellen eines Halbleiterbauelementes oder einer Halbleiterschaltung
US5229334A (en) * 1990-08-24 1993-07-20 Seiko Epson Corporation Method of forming a gate insulating film involving a step of cleaning using an ammonia-peroxide solution
JPH09115869A (ja) * 1995-08-10 1997-05-02 Seiko Epson Corp 半導体装置の製造方法及び半導体装置
WO2000072366A1 (fr) * 1999-05-21 2000-11-30 Plasmasil, L.L.C. Procede d'amelioration de l'uniformite en epaisseur des plaquettes semi-conductrices
US6230720B1 (en) * 1999-08-16 2001-05-15 Memc Electronic Materials, Inc. Single-operation method of cleaning semiconductors after final polishing
DE19962136A1 (de) * 1999-12-22 2001-06-28 Merck Patent Gmbh Verfahren zur Rauhätzung von Siliziumsolarzellen
JP2004172271A (ja) * 2002-11-19 2004-06-17 Mitsubishi Electric Corp 太陽電池の製造方法及び太陽電池
US8268735B2 (en) * 2006-02-01 2012-09-18 Tohoku University Semiconductor device manufacturing method and method for reducing microroughness of semiconductor surface
DE102007004060B4 (de) * 2007-01-22 2013-03-21 Gp Solar Gmbh Verwendung einer Ätzlösung aufweisend Wasser, Salpetersäure und Schwefelsäure und Ätzverfahren
KR100931196B1 (ko) * 2007-10-10 2009-12-10 주식회사 실트론 실리콘 웨이퍼 세정 방법

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110600363A (zh) * 2019-09-18 2019-12-20 武汉新芯集成电路制造有限公司 去除氧化硅的方法及半导体器件的制造方法

Also Published As

Publication number Publication date
WO2010052541A3 (fr) 2010-10-07
DE102008056455B3 (de) 2010-04-29
WO2010052541A2 (fr) 2010-05-14

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