201024029 六、發明說明： 【發明所屬之技術領域】 • 本發明主要係關於一種修整或調整一化學機械拋光 • (CMP)墊的方法。因此，本發明涉及化學和材料技術領域。 【先前技術】 化學機械拋光（CM P )是有效的平整化製程，其係用 於製造陶瓷、矽、玻璃、石英及金屬之晶圓的半導體產業， 包括層間介電層（inter-level dielectric，丨LD)和鎮嵌金屬 e 化（Damascene metallization)的製程。這種抛光製程通常 需要將晶圓抵靠在由耐久性有機物質諸如聚胺基甲酸酯 (polyurethane)的旋轉拋光墊上。含有能夠破碎晶圓物質之 化學品的研磨漿被引入拋光墊上，該研磨漿額外還包括能 以物理性方式侵蝕晶圓表面的研磨顆粒。該研磨漿持續地 施加於旋轉的CMP拋光墊，可同時施加化學和機械力的雙 重作用施加在晶圓上，使得晶圓能以想要的方式被拋光。 研磨顆粒在整個拋光墊表面上的分佈情形是達成研磨 ❹品質之重要因素。拋光塾之頂部通常藉由如纖維或小孔所 提供的摩擦力機制來容納該等顆粒，該等纖維或小孔能提 供摩擦力，其足以防止該等顆粒因拋光墊旋轉運動所產生 的離心力而被甩出該拋光墊。因此，盡可能保持拋光墊之 頂部的彈性與可直立起纖維的狀態，且確保有足夠的開孔 以容納新的研磨顆粒皆是相當重要的。 由於來自工作件與研磨漿的碎屑累加情形，使得維持 拋光墊頂部狀態成為一個難題，因為這種累加會使拋光墊 頂部變得光滑（glazing)或硬化（hardenjng)，因此使該抛光 201024029 墊不太能夠自流動的研磨漿流中容納新的研磨顆粒，此情 形嚴重地減少抛光墊整髏的抛光效果，因此會藉由各種不 • 同的裝置進行梳理（combing)或切削（cutting)拋光墊頂部以 • 試圖恢復拋光塾頂部’此步驟即為CMP拋光墊的修整 (dressing)或調整（conditioning);且為此目的，許多形態 的裝置與方法已被使用’其中一種裝置是一具複數個結合 於一表面或基座之超研磨顆粒（如鑽石）的圓盤。 新的修整盤具有尖銳且可切割該CMP拋光墊表面的超 Ο 研磨顆粒’使該CMp拋光墊表面具有密集且深的表面粗糙 度。該研磨漿有效地被保留於這些深的表面粗縫度，使晶 圓有相當高的撤光速率。然而，持續使用後，在修整盤中 的該等超研磨顆粒開始磨損，且其尖端開始逐漸鈍化；該 鈍化的超研磨顆粒便無法深入地進入CMP拋光墊表面智所 需的深度’且當超研磨顆粒尖端受磨損後，會使切割槽變 得更寬。此磨損效應造成寬、稀疏且淺的表面粗糙度，使 用此種修整盤調整的CMP拋光墊無法有效地保留研磨漿， 〇 因此降低了晶圓的拋光速率。在修整盤上的超研磨顆粒會 持續磨損，直到它們被壓入拋光墊中，而非切割；並且切 割效率低的修整盤所會產生碎屑，且集結在CMp拋光墊表 面上’產生不均勻的拋光，且增加晶圓的刮痕。 有鑑於此，目前仍在尋找用於建構cMP拋光墊修整器 盤的方法，以達到最大的效能及使用壽命。 【發明内容】 因此，本發明提供一種延長用於修整化學機械拋光墊 之化學機械拋光修整器之有效使用壽命的方法，該修整器 201024029 具有一基座以及複數設置於該基座上的超研磨顆粒，這種 方法可包括利用該修整器修整該化學機械拋光墊；藉由量 測該拋光墊、修整器或其組合的機械性質而測定超研磨顆 粒之磨損（wear);藉由改變該拋光墊和修整器之間與超研 磨顆粒之磨損有關的壓力和機體轉速（RPM)而回應該機械 性質量測值，以延長修整器壽命。 在另一實施例中，該方法可包括以該修整器修整該化 學機械抛光墊；以一實質上平行於該拋光墊之工作表面的 ❹方向振動選自於抛光塾、修整器、被該抛光塾拋光之晶圓 或任何其組合的元件，以使在拋光墊、修整器、晶圓或其 組合上的機械應力最小化；以及改變該拋光墊和修整器之 間的壓力和機體轉速（RPM)，包括當修整器在使用時隨著 時間以非線性的方式逐漸增加該拋光墊和修整器之間的壓 力和RPM，以延長修整器壽命，其中當化學機械拋光墊表 面出現磨損，該壓力和RPM係增加的。 因此，現在本發明僅描述一個初步、廣大的概念以及 ❿較重要的特色，因此在接下來的詳細說明中可更進一步地 理解，並且在本領，域所做的貢獻可能會有更佳的領會，而 本發明的其他特徵將會從接下來的詳細說明及其附圖和申 請專利範圍中變得更為清晰，也可能在實行本發明時得知。 【實施方式】 在本發明被揭露和敘述之前，必須了解的是以下所敘 述及揭露的發明並無意限制本發明製作步驟和材料，而β 延伸至所屬技術領域令具有通常知識者所能推想到的等效 製作步驟及材料，而以下說明中使用專有名詞的目的係在 201024029 敘述特定實施例，亦非對本發明有任何的限制。 值得注意的是在本說明書及其申請專利範圍所使用的 單數型態字眼如「一」、「該」和「其」，皆僅為先行詞， 除非在上下文中清楚明白的指示為單數，不然這些單數型 態的先行詞亦包括複數對象，因此，舉例來說，如一「研 磨顆粒」或資「拋光墊」包括一或多個這種研磨顆粒或拋 光墊。 定義 〇 以下是在本發明的說明及專利範圍中所出現之專有名 詞的定義。 在此所述的「超研磨顆粒（superabrasive partic丨e)」、 及「研磨顆粒（abrasive particle)」、「微粒（grit)」或類似 用語係指超硬晶體或多晶物質或物質的混合物，包括但不 限制在鑽石、多晶鑽石（PCD)、立方氮化硼（cBN)以及多 晶立方氮化棚（PcBN)。再者，「超研磨顆粒（superabrasive particle)」、「研磨顆粒（abrasive particle)」、「微粒（grit)」、 ® 「鑽石」、「多晶鑽石」、「立方氮化硼」和「多晶立方 氮化硼」之用語能夠互換使用。 「超硬(superhard)」與「超研磨(superabrasive)」可互換使用， 且係指具有大約4000 Kg/mm2或更大之維氏硬度(Vicker’ s hardness) 的、-〇 re或夕日日材料，或此等材料之混合物。此等材料可包括但不限制 在鑽石及立方氤化硼（CBN),以及於所屬技術領域中具有通常知識 者已知的其他材料。雖然超研磨材料呈現強烈的惰性，因此難以與其 形成化學鍵，但是已知如鉻及鈦之特定反應元素能夠在相當的溫度下 與超研磨材料起化學反應。 201024029 在此所述的「基座（substrate)」係指具有可讓研磨顆 粒結合之表面的CMP拋光墊修整器的基本部分（曲沾 portion)，該基本部分可為任何形狀、厚度或材料，其包括 但不限制在金屬、合金、陶瓷及其混合物。 在此所述的「工作表面（wo「king su「face)」係指一 cMp 拋光墊修整器的表面，其係在操作時面對或接觸CMp拋光 塾0 在此所述的「引導邊緣（leading edge)」係指cMP拋 e 光墊修整器的邊緣，其基於cmp拋光墊移動的方向、拋光 墊移動的方向或以上二者的前側邊緣。值得注意的是在一 些情形中，該引導邊緣可考慮不僅包圍修整器邊緣之具體 區域’還可包括從實際邊緣些微向内延伸的部分修整器。 在一態樣中，該引導邊緣可能位於沿著CMP拋光墊修整器 的外側邊緣。在另一態樣中，該CMP拋光墊修整器可能配 置以具有研磨顆粒的圖案，該研磨顆粒係提供在CMP拋光 墊修整器工作表面之中央或内部的至少一有效引導邊緣， ⑩換句話說，該修整器的中央或内部可被配置以提供與該修 整器外側邊緣之引導邊緣一樣的功能性結果σ 在此所述的「尖端部J係指任何晶艘會形成的狹窄部 份，其係包括但不限制在角落、脊部、邊緣、方尖區（obensk) 以及任何凸部。 在此所述的「壓力（pressure)」係指施加在一 CMP拋 光塾修整器和_ CMp拋光墊之間的力，因此關於增加或減 少壓力係指施加在修整器和拋光墊之間力的不同而導致壓 力的增加或減少。 201024029 在此所述的「機體轉速（RPM)」係指在修整操作中，CMp 拋光塾和CMP拋光塾修整器之間相對運動所量測之每分鐘 旋轉次數。所以一或多個在運動的拋光塾以及修整器皆可 被考慮在内。因此關於增加或減少RPM係指施加在修整器 和拋光墊之間力的不同而導致RPM的增加或減少。 在此所述的「修整操作（dressjng 〇peratl〇n)」係指當 修整器施壓且自動修整抛光塾的期間。 在此所述的「振動（vibrate)」係指以實質上水平地以 ❹前後或從一側至另一側迅速移動的方式震盈一物體。振動 可依照振動程式而為連績性、間歇式、持續性變化等。因 此’- CMP拋光塾、一 CMp拋光塾修整器、晶圓或一具 超研磨顆粒的CMP抛光塾修整器的能约以想要的頻率振動 以獲得最適化的拋光效能β 在此所述的「超音波（ultras〇m_c)」係指能夠以高於人 耳可聽到之頻率而振動的任何能量。例如，這種頻率係高 :約15,0〇〇赫兹（Hz)’或換句話說是高於每秒鐘約15 〇〇〇 © 的循環（cycle)。 在此所述的R實質上地（sub$tantia丨丨y)」，當使用在關 ;材料的量或數量或其特定的特性時係指足以提供意欲提 供之材料或特性之效果的數量。可允許之誤差的實際程度 在一些情形中必須依照特定内容來判斷。 在此所述的「大約（ab〇ut)」係可在邊界值「高一些」 或「低一些」的數值，以用於提供一數值範圍之邊界值的 彈性。 這裡所述的複數個物品、結構元件、組成元素和/或材 201024029 料’基於方便可出現在一 一般的常見列舉中，然而這些列舉201024029 VI. Description of the Invention: TECHNICAL FIELD OF THE INVENTION The present invention relates generally to a method of trimming or adjusting a chemical mechanical polishing (CMP) pad. Accordingly, the present invention relates to the field of chemistry and materials technology. [Prior Art] Chemical mechanical polishing (CM P ) is an effective planarization process for the semiconductor industry for the fabrication of ceramic, germanium, glass, quartz and metal wafers, including inter-level dielectrics.丨LD) and the process of damascene metallization. This polishing process typically requires the wafer to be placed against a rotating polishing pad made of a durable organic material such as polyurethane. A slurry containing a chemical capable of breaking the wafer material is introduced into the polishing pad, which additionally includes abrasive particles that physically erode the surface of the wafer. The slurry is continuously applied to the rotating CMP pad to simultaneously apply a dual action of chemical and mechanical forces to the wafer so that the wafer can be polished in a desired manner. The distribution of the abrasive particles across the surface of the polishing pad is an important factor in achieving the quality of the abrasive. The top of the polished crucible is typically held by a frictional mechanism such as that provided by fibers or apertures that provide friction sufficient to prevent centrifugal forces generated by the rotation of the polishing pad. The polishing pad was pulled out. Therefore, it is important to maintain the elasticity of the top of the polishing pad as much as possible and the state in which the fibers can be erected, and to ensure that there are sufficient openings to accommodate the new abrasive particles. Maintaining the top state of the polishing pad becomes a problem due to the accumulation of debris from the workpiece and the slurry, because this accumulation causes the top of the polishing pad to become glazing or harden, thus making the polishing 201024029 pad The inability to self-flow the slurry stream to accommodate new abrasive particles, which severely reduces the polishing effect of the polishing pad, so combing or cutting is performed by various non-identical devices. The top of the pad is used to try to restore the top of the polished enamel'. This step is the dressing or conditioning of the CMP pad; and for this purpose, many forms of devices and methods have been used. 'One of the devices is a plural A disc of superabrasive particles (such as diamonds) bonded to a surface or pedestal. The new conditioning disc has ultra-fine abrasive particles that are sharp and can cut the surface of the CMP polishing pad, giving the CMp polishing pad surface a dense and deep surface roughness. The slurry is effectively retained on these deep surface rough seams to provide a relatively high rate of light removal from the crystal. However, after continuous use, the superabrasive particles in the conditioning disk begin to wear and their tips begin to passivate gradually; the passivated superabrasive particles cannot penetrate deep into the depth required for the surface of the CMP pad. When the tip of the abrasive particles is worn, the cutting groove becomes wider. This wear effect results in a wide, sparse and shallow surface roughness, and the CMP pad used with such a conditioning disc does not effectively retain the slurry, thus reducing the polishing rate of the wafer. The superabrasive particles on the conditioning disc will continue to wear until they are pressed into the polishing pad, rather than being cut; and the cutting disc with low cutting efficiency will produce debris and build up on the surface of the CMp polishing pad to produce unevenness. Polishing and increasing scratches on the wafer. In view of this, methods for constructing cMP polishing pad dressing discs are still being sought for maximum performance and service life. SUMMARY OF THE INVENTION Accordingly, the present invention provides a method of extending the useful life of a chemical mechanical polishing dresser for conditioning a chemical mechanical polishing pad, the dresser 201024029 having a base and a plurality of superabrasives disposed on the base Particles, the method may comprise trimming the chemical mechanical polishing pad with the dresser; determining the wear of the superabrasive particles by measuring the mechanical properties of the polishing pad, the dresser or a combination thereof; by changing the polishing The pressure and body speed (RPM) associated with the wear of the superabrasive particles between the pad and the dresser are returned to the mechanical quality measurement to extend the life of the dresser. In another embodiment, the method can include trimming the chemical mechanical polishing pad with the trimmer; vibrating in a direction substantially parallel to the working surface of the polishing pad selected from the group consisting of a polishing pad, a trimmer, and the polishing塾 Polished wafer or any combination of components to minimize mechanical stress on the polishing pad, trimmer, wafer or combination thereof; and change the pressure and body speed between the polishing pad and the dresser (RPM ), including increasing the pressure and RPM between the polishing pad and the dresser in a non-linear manner over time as the trimmer is in use to extend the life of the trimmer, wherein the wear occurs on the surface of the chemical mechanical polishing pad And the RPM system is added. Therefore, the present invention now only describes a preliminary, broad concept, and more important features, and thus can be further understood in the following detailed description, and in the field, the contributions made by the domain may be better understood. Other features of the present invention will become apparent from the following detailed description, the appended claims and claims. [Embodiment] Before the present invention is disclosed and described, it is to be understood that the invention described and disclosed herein is not intended to limit the invention. The equivalent production steps and materials, and the use of proper nouns in the following descriptions are intended to describe specific embodiments in 201024029, and are not intended to limit the invention. It is to be understood that the singular forms " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " The antecedent of these singular forms also includes plural objects, such as, for example, "abrasive particles" or "polishing pads" including one or more such abrasive particles or polishing pads. DEFINITIONS 〇 The following are definitions of proprietary terms that appear in the description and patent scope of the present invention. As used herein, "superabrasive partic", and "abrasive particle", "grit" or the like refers to a mixture of superhard crystals or polycrystalline materials or substances. These include, but are not limited to, diamonds, polycrystalline diamonds (PCD), cubic boron nitride (cBN), and polycrystalline cubic nitride sheds (PcBN). Furthermore, "superabrasive particle", "abrasive particle", "grit", "diamond", "polycrystalline diamond", "cubic boron nitride" and "polycrystalline" The term "cubic boron nitride" can be used interchangeably. "Superhard" is used interchangeably with "superabrasive" and refers to -〇re or eve material having a Vicker's hardness of approximately 4000 Kg/mm2 or greater. , or a mixture of such materials. Such materials may include, but are not limited to, diamonds and cubic boron nitride (CBN), as well as other materials known to those of ordinary skill in the art. Although superabrasive materials exhibit strong inertness, it is difficult to form chemical bonds with them, but it is known that specific reaction elements such as chromium and titanium are capable of chemically reacting with superabrasive materials at comparable temperatures. 201024029 "Substrate" as used herein refers to a substantial portion of a CMP pad dresser having a surface that allows abrasive particles to be bonded, which may be of any shape, thickness or material. It includes, but is not limited to, metals, alloys, ceramics, and mixtures thereof. As used herein, "women's "king su"face" means the surface of a cMp polishing pad conditioner that faces or contacts the CMp polishing 塾0 during operation. Leading edge) refers to the edge of a cMP polishing pad that is based on the direction in which the cmp pad moves, the direction in which the pad moves, or the front edge of both. It is noted that in some cases, the leading edge may take into account not only the specific area surrounding the edge of the trimmer, but may also include a partial trimmer that extends slightly inward from the actual edge. In one aspect, the leading edge may be located along the outer edge of the CMP pad dresser. In another aspect, the CMP pad dresser may be configured to have a pattern of abrasive particles that provide at least one effective leading edge in the center or interior of the CMP pad dresser working surface, in other words The center or interior of the dresser can be configured to provide the same functional result as the leading edge of the outer edge of the dresser. σ "The tip portion J refers to a narrow portion formed by any crystal boat. This includes, but is not limited to, corners, ridges, edges, obensks, and any protrusions. "Pressure" as used herein refers to application to a CMP polishing 塾 dresser and _ CMp polishing pad. The force between them, therefore with respect to increasing or decreasing the pressure, refers to the difference in force exerted between the dresser and the polishing pad resulting in an increase or decrease in pressure. 201024029 The term "body speed (RPM)" as used herein refers to the number of revolutions per minute measured during relative motion between the CMp polishing cartridge and the CMP polishing cartridge trimmer during the trimming operation. Therefore, one or more polishing rafts and trimmers in motion can be taken into account. Thus increasing or decreasing RPM refers to the difference in force applied between the dresser and the polishing pad resulting in an increase or decrease in RPM. The "dressing operation (dressjng 〇peratl〇n)" as used herein refers to the period during which the dresser is pressed and the polishing burr is automatically trimmed. As used herein, "vibrate" means vibrating an object in such a manner as to move substantially horizontally forward or backward, or from side to side. Vibration can be continuous, intermittent, continuous, etc. depending on the vibration program. Therefore, the '- CMP polishing crucible, a CMp polishing crucible conditioner, wafer or a superabrasive CMP polishing reticle can vibrate at a desired frequency to obtain an optimum polishing performance β. "ultras 〇m_c" means any energy that can vibrate at a higher frequency than the human ear can hear. For example, this frequency is high: about 15,0 Hz (in degrees) or in other words, a cycle of about 15 〇〇〇 © per second. R, as used herein, is used substantially when referring to the amount or amount of material or its particular characteristics, to an amount sufficient to provide the effect of the material or property desired to be provided. The actual degree of allowable error must be judged in accordance with specific content in some cases. As used herein, "ab〇ut" is a value that is "higher" or "lower" in the boundary value to provide flexibility in the boundary value of a range of values. The plurality of articles, structural elements, constituent elements and/or materials described herein may be present in a general list based on convenience, however these enumerations
濃度、數量以及其他數值冑料可是以範圍的形 來加以呈現或表示，而需 僅基於方便性以及簡潔， 而需要瞭解的是這種範圍形式的使用 潔’因此在解釋時，應具有相當的彈 〇性，不僅包括在範圍中明確顯示出來以作為限制之數值， 同時亦可包含所有個別的數值以及在數值範圍中的次範 圍，如同每一個數值以及次範圍被明確地引述出來一般。 例如一個數值範圍「約1到約5」應該解釋成不僅僅包括 明確引述出來的大約1到大約5,同時還包括在此指定範 圍内的每一個數值以及次範圍，因此，包含在此一數值範 圍中的每一個數值’例如2、3及4，或例如1 -3、2-4以 及3-5等的次範圍等 © 此相同原則適用在僅有引述一數值的範圍中，再者， 這樣的:闡明應該能應用在無論是一範圍的幅度或所述'的特 徵中^ 本發明 如同先前所述，CMP拋光墊修整器係用於修整CMP 拋光墊，以移除髒污或碎屑，並且恢復拋光墊表面的粗糙 度。表面粗韃度對於CMP樾光墊的功能很重要，它們能保 留研磨漿並且將其導向（channel)要被拋光之材料，當CMP 具有深且密的表面粗糙度以保留研磨漿時，會達到較高的 201024029 拋光速率。如第一圖所示，尖銳的超研磨顆粒（如鑽石）能夠 在CMP拋光墊上切割出這種理想的表面粗糙度，其可使研 磨衆的保留度最大化，且因此提供高速拋光。當使用修整 器時’埋設的超研磨顆粒開始因時間磨損，且其尖端和邊 緣如第二圖所示會變鈍且圓滑（rounded)。磨損的超研磨顆 粒較不能有效率地切割該CMP拋光墊，使得在拋光墊表面 所產生的表面粗糙度變淺、更寬且稀疏。第三圖為示意圖， 描述超研磨顆粒的磨損和在CMP拋光墊上之切割圖案的後 〇 續影響’當超研磨顆粒磨損，修整器的切割圖案會改變， 夹銳的超研磨顆粒（10)在該CMP拋光墊（14)表面切割深的 表面粗糙度（12);當超研磨顆粒開始磨損，適當深度的 表面粗糙度（18)被切割至該Cmp拋光墊表面（14);當超研 磨顆粒開始嚴重磨損（20)，會切割出非常淺的表面粗糙度 (22);該超研磨顆粒最後變得磨損以致於其無法在切割和/ 或凊裡’而僅能與抛光墊表面摩擦。該拋光些的表面變硬 且有碎屑覆蓋，會增加刮蝕以及晶圓或其他工作表面損耗 〇 的速率，因此，當超研磨顆粒磨損，該CMP拋光墊的拋光 速率會隨晻間而下降。如第四圖所示，當讓€；|^|3拋光墊修 整器的使用時間越長，拋光速率（3〇)會下降，而缺陷數量（32) 則增加（第四圖）。 本發明人發現依照修整器之超研磨顆粒磨損之程度而 改變CMP拋光墊修整器施加在該CMp拋光墊的力量，該 修整器的使用壽命會延長。例如，在超研磨顆粒磨損時増 加CMP拋光墊修整器以及CMp拋光墊之間的力量會增加 該修整器的使用壽命；藉由增加壓力和/或RPM，超研磨顆 201024029 粒會壓传更深入抛光塾中’因此增加切割效率。除此之外， 這種壓力和/或RPM的增加也能夠讓超研磨顆粒接觸拋光 塾表面的部分更大’不會太突出修整器表面的超研磨顆粒 在增加壓力和/或RPM時接觸並修整該拋光墊，當嚴重磨 損的超研磨顆粒將有助於損壞晶圓時·，能考慮在該等超研 磨顆粒完全磨損之前增加壓力和/或RP|V^因此，在一態樣 中，係提供用於修整一 CMP拋光墊，且延長一具有基座和 複數設置於該基座上之超研磨顆粒的CMP拋光墊修整器之 ❹使用壽命的方法’該方法可尚包括藉由該修整器修整該化 學機械抛光墊；藉由量測該拋光墊、修整器或其組合的機 械性質而測定超研磨顆粒之磨損（wear);藉由改變該拋光 墊和修整器之間與超研磨顆粒之磨損有關的壓力和機體轉 速（RPM)而回應該機械性質量測值，以延長修整器壽命。 目前的實務傾向於提供對於該CMP拋光墊具有固定壓 力以及RPM的修整器’通常壓力在修整器的整個使用壽命 中約為10 lbs。同樣地，目前修整的機器只能施加固定的 ❹壓力，且要求該機器必須停止運轉，以重新設定壓力。而 相反的是，本發明之態樣中由於涉及超研磨顆粒實際或預 期之磨損’所以考慮增加CMP.拋光墊和修整器之間的壓力 和/或RPM，藉由增加所施加的壓力，該等超研磨顆粒之尖 端會更深入地切入該CMP拋光墊表面，而仍然保持在切割 的狀態。並無特定結合任何理論，相信增加與超研磨顆粒 磨損有關之壓力和/或RPM能增加工具的使用壽命，因為 增加的壓力和/或RPM能夠抵銷（offset)這種磨損。值得注 意的是，無論所施加之壓力的多募，若能在超研磨顆粒變 11 201024029 的太鈍以致於無法穿進拋光墊之前完成施加力量的增加是 最有效的。壓力和/或PRPM或應力之增加程度能藉由檢驗 切割圖案、檢驗超研磨顆粒、估計超研磨顆粒的磨損等， 輕易地由所屬技術領域中具有通常知識者所決定。所施應 力的量也會依照修整器的尺寸、修整器的機械特性以及所 執行之拋光的種類而決定’雖然有了這些變數，但該壓力 和/或RPM究竟要調整多少仍無法得知而付諸實現，但是 於所屬技術領域中具有通常知識者一旦得知本發明揭露的 © 内容後就能為了特定的拋光製程而快速地測定壓力和/或 RPM所需的變數。但是在一特定態樣中，在CMp拋光墊 和CMP抛光墊修整器之間的壓力和/或rPm會增加約1% 至約100% ;在另一特定態樣中’該壓力和/或rPM會增加 約1 %至約50% ;於又一特定態樣中，該壓力和/或rpm會 增加約1%至約20%;於再一特定態樣中，該壓力和/或RPM 會增加約1 %至約1 〇〇/〇;再於另一特定態樣中，該壓力和/ 或RPM的增加會小於約5〇/〇 ;又於一特定態樣中，該壓力 ® 和/或RPM的增加會大於約1〇〇〇/。。 應該了解的是’改變該壓力和/或:RPM也包括降低該 壓力和/或RPM，特，別是那些具有幾乎沒有或完全沒有磨損 之超研磨顆粒的修整器。尖銳的超研磨顆粒常常切進CMP 拋光墊的深度比所需要保持研磨裂的深度還深，這種「過 分修整（overdressing)」使得超研磨顆粒磨損的太快。當超 研磨顆粒太尖銳時，藉由降低拋光墊和修整器之間的壓力 和/或RPM，讓該等顆粒的整體磨損降低，以使得修整器的 壽命更加延長。 12 201024029 CMP椒光墊修整器和CMP拋光墊之間壓力和/或rpm 増加的時機和程度可幫助測定超研磨顆粒的磨損程度。各 種測定超研磨顆粒磨損程度的方法皆能考慮，而其皆被視 為在本發明之範疇内，這種測定可為實際的測定或是基於 計算或假設磨損的圖案而估計的。因此，當超研磨顆粒的 磨損正在發生或已經發生而被測定，則可據此改變在C Μ P 抛光墊修整器和CMP拋光墊之間所施的應力或壓力和/或 RPM’以在該CMP拋光墊表面保持更適當的表面粗糖度型 〇 態（如深度、寬度、密度等）。 在本發明之一態樣中，測定超研磨顆粒磨損的範圍可 包括檢驗一已修整的CM P拋光墊表面，切入該CMP拋光 塾表面的深度、寬度、密度等能提供所屬技術領域中具有 通常知識者對於該等超研磨顆粒磨損程度的一些指示。此 檢驗方法的一個優點就是不用將修整器從拋光裝置移除就 能估計超研磨顆粒的磨損，這種檢驗可人為地以肉眼觀察 而可伴隨著放大裝置或其他能夠清楚表現出該CMP拋光墊 ❹表面結構的方式，也可不需要這些即可完成；檢驗也可自 動化地透過視覺影像或機械量測方法完成。 如上:所述，在本發明之另一態樣甲，測定超研磨顆粒 的磨損能藉由量測該拋光墊、修整器或其組合的機械性質 而執行，所量測的機械性質係選自於由以下所組成之群組.： 摩擦力、聲波放射性（acoustjc emiSSjon)、溫度、拋光墊反 射性〜拋光墊撓曲性⑴拉比丨丨丨以厂拋光墊彈性㈤㈣丨…幻以 及其組合。因此，在一態樣中，所量測的機械性質為摩擦 力；在另一態樣中，所量測的機械性質為聲波放射性。又 13 201024029 於另一態樣中，所量測的機械性質為溫度；在又一態樣中， 所量測的機械性質為拋光墊反射性；尚於一態樣中，所量 測的機械性質為拋光墊撓曲性；再於一態樣中，所量測的 機械性質為拋光墊彈性。 實際上表面粗糙度之圖案的任何態樣能用以評估該超 研磨顆粒磨損的程度，並促使壓力和/或RPM的改變。藉 由改變切割壓力和/或RPM以改進至少一表面粗糙度之圖 案的特性’研磨漿能更有效地保持在該CMP拋光墊的表 〇 面，且更均勻地分布’也可促進拋光速度，並增加修整器 的使用壽命。在一態樣中’當該CMP拋光墊表面之平均表 面粗糙度密度降低時，該壓力和/或rPM就會增加，而這 種降低之密度係起因於寬度增加、長度縮短等因素，其也 可能會導致超研磨顆粒無法有效切割。鈍的超研磨顆粒只 能間歇式地切割該CMP拋光墊表面，致使其上的表面粗糖 度降低》 在另一態樣中，當該CMP拋光墊表面呈現降低之平均 ® 表面粗糙度深度時，則該壓力和/或RPM會增加。當該等 、超研磨顆粒開始變鈍，其不再具有能夠切割深、的表面粗糙 度的尖銳尖端以及邊緣。藉由增加切割壓力和/或RPM，該 等超研磨親粒會更朝該CMP抛光塾表面壓入，且更均勻的 分布，因此能夠切割較深的表面粗糖度以保留更多研磨漿。 在又一態樣中，當該CMP拋光墊表面之平均表面粗糙 度寬度減少時，該壓力和/或RPM就會增加。如上所述， 當該等超研磨顆粒磨損，其尖端和邊緣變的圓滑且平順， 而當尖端和邊緣逐漸磨損而消失，這些顆粒開始切割較寬 201024029 的表面粗糙度，而反映為目前磨損的表面。雖然增加該壓 力和/或RPM無法將寬度縮小至鈍化前之表面粗糙度寬度 的程度，但其能夠切割出更深的表面粗糙度，因此在拋光 時可保留住更大量的研磨漿。 再於一態樣中，當該CMP拋光墊表面呈現降低之平均 表面粗糙度長度時，則該壓力和/或RPM會增加。當該等 超研磨顆粒的尖端和邊緣磨損時，其傾向於使該CMp拋光 墊表面局部變形，而非在其上切割出表面粗糙度，因此， © 磨損的超研磨顆粒傾向於間歇性切割以及彎曲（deflect)該 表面，而發生平均長度的表面粗糙度減少的情況。藉由增 加超研磨顆粒下壓的壓力和/或RPM，延伸其切割深度，而 增加在拋光墊表面之表面粗糙度的平均長度。 除此之外’若該CMP拋光塾表面的表面粗糙度更深、 更寬、更長或更密集，即所需要用來保留研磨漿的特徵， 降低該拋光墊和修整器之間的壓力和/或RPM可減諼超研 磨顆粒的磨損程度，並因此延長該修整器的使用壽命。 ® 另一測定超研磨顆粒磨損程度的方法可包括檢測至少 一部分設置在修整器表面的超研磨顆粒。雖然直接檢測超 研磨顆粒的情況必須將修整器從該.CMP拋光墊表面移開， 但這種檢測可提供修整器表面比只:有觀察工具之切割圖案 更精確的評估。在此評估之後，該修整器施加在該CMp拋 光墊表面的壓力和/或RPM能夠對應於所觀察之超研磨顆 粒的磨損量而改變。 在測定超研磨顆粒磨損程度的另一種方法包括基於修 整器的使用而估計超研磨顆粒磨的磨損。隨著時間，所屬 15 201024029 技術領域中具有通常知識者能夠基於先前CMP拋光墊修整 器的磨損圖案而估計超研磨顆粒磨損的圖案，在很多情形 中樣的估计方法由於其具成本效益的特性所以證實是 有幫助的·》藉由估計超研磨顆粒磨損圖案而改變該CMp拋 光墊修整器和該拋光墊表面的壓力和广或RpM，能避免因應 停止拋光程序的要求就能檢測該CMP拋光墊表面或在修整 器中的超研磨顆粒的情形。 各種改變CMP抛光墊修整器和拋光墊表面之壓力和/ ©或RPM 6^法都能考慮、，且所有方法皆應視為在本發明之 範疇内。例如，在一態樣中，改變該壓力和/或RpM包括 手動調整。當在修整器上之超研磨顆粒已被測定為磨損， 則該壓力和/或RPM就能考慮以手動方式改變，因此抵銷 這種磨損的情形，這種手動改變會發生在觀察該拋光墊表 面的表面粗糙度、檢測在修整器上超研磨顆粒的狀況或根 據修整器的使用而估計磨損量之後。 也能考慮自動化改變在該CMP拋光墊修整器和該拋光 ® 墊表面的壓力和/或RPM。各種自動化改變的方法都可行， 包括依照超研磨顆粒磨摒之觀察結果、超研磨顆粒磨損的 估計 '超研磨顆粒磨損.的預測等而自動改變，此可包括在 自動增加之後超研磨顆粒所觀測之磨損情形的通知；或者，Concentrations, quantities, and other numerical data can be presented or represented in a range of shapes, but only based on convenience and simplicity, and it is necessary to understand that the use of such a range of forms is so clear that it should be equivalent when interpreted. The implied nature includes not only the numerical values explicitly indicated in the range, but also all individual values and sub-ranges in the numerical range, as each numerical value and sub-range are explicitly recited. For example, a range of values "about 1 to about 5" should be interpreted to include not only about 1 to about 5 that are explicitly recited, but also every value and sub-range within the specified range, and therefore, Each value in the range 'eg 2, 3, and 4, or a sub-range such as 1-3, 2-4, and 3-5, etc. © This same principle applies to a range in which only one value is quoted, and further, Such: clarification should be applicable to either a range of amplitudes or the characteristics of the present invention. As previously described, a CMP pad dresser is used to trim a CMP pad to remove dirt or debris. And restore the roughness of the polishing pad surface. Surface roughness is important for the function of CMP calender pads, which retain the slurry and channel it to the material to be polished. When CMP has a deep and dense surface roughness to retain the slurry, it will Higher 201024029 polishing rate. As shown in the first figure, sharp superabrasive particles (such as diamonds) are able to cut this desired surface roughness on a CMP pad, which maximizes the retention of the abrasive population and thus provides high speed polishing. When the dresser is used, the embedded superabrasive particles begin to wear out over time, and their tips and edges become dull and rounded as shown in the second figure. The worn superabrasive particles are less efficient in cutting the CMP pad, resulting in a shallower, wider and sparse surface roughness on the surface of the pad. The third figure is a schematic diagram depicting the wear of the superabrasive particles and the subsequent effects of the cutting pattern on the CMP pad. When the superabrasive particles are worn, the cutting pattern of the dresser changes, and the sharp superabrasive particles (10) are The surface of the CMP pad (14) is cut to a deep surface roughness (12); when the superabrasive particles begin to wear, a suitable depth of surface roughness (18) is cut to the surface of the Cmp pad (14); when superabrasive particles Severe wear (20) begins, and a very shallow surface roughness (22) is cut; the superabrasive particles eventually become so worn that they cannot be cut and/or rubbed and can only rub against the surface of the polishing pad. The polished surface is hardened and covered with debris, which increases the rate of scratching and loss of defects on the wafer or other working surface. Therefore, when the superabrasive particles are worn, the polishing rate of the CMP pad decreases with the darkness. . As shown in the fourth figure, the longer the polishing time of the €;|^|3 polishing pad conditioner, the lower the polishing rate (3〇) and the number of defects (32) (fourth image). The inventors have found that varying the force exerted by the CMP pad dresser on the CMp pad in accordance with the degree of wear of the superabrasive particles of the dresser, the life of the dresser can be extended. For example, adding super-abrasive particles to the CMP pad dresser and the force between the CMp pad will increase the life of the dresser; by increasing the pressure and/or RPM, the ultra-abrasive 201024029 will pass deeper. Polished in the crucible' thus increasing the cutting efficiency. In addition, this increase in pressure and/or RPM can also allow the superabrasive particles to contact the polished enamel surface with a larger portion of the 'abrasive particles that do not protrude too much from the surface of the dresser when exposed to increased pressure and/or RPM and Trimming the polishing pad, when severely worn superabrasive particles will help damage the wafer, it is possible to consider increasing the pressure and/or RP|V^ before the superabrasive particles are completely worn, thus, in one aspect, Providing a method for trimming a CMP pad and extending the life of a CMP pad dresser having a pedestal and a plurality of superabrasive particles disposed on the pedestal. The method may further include Trimming the chemical mechanical polishing pad; determining the wear of the superabrasive particles by measuring the mechanical properties of the polishing pad, the trimmer, or a combination thereof; by changing the polishing pad and the dresser to the superabrasive particles The wear-related pressure and body speed (RPM) are returned to the mechanical quality measurement to extend the life of the dresser. Current practice tends to provide a trimmer with a fixed pressure and RPM for the CMP pad typically with a pressure of about 10 lbs over the life of the dresser. Similarly, currently trimmed machines can only apply a fixed helium pressure and require the machine to be shut down to reset the pressure. Conversely, in the aspect of the invention, due to the actual or expected wear of the superabrasive particles, it is contemplated to increase the pressure and/or RPM between the polishing pad and the dresser by increasing the applied pressure. The tip of the superabrasive particle will cut deeper into the surface of the CMP pad while still remaining in the cut state. Without specifically incorporating any theory, it is believed that increasing the pressure and/or RPM associated with wear of the superabrasive particles can increase the useful life of the tool as the increased pressure and/or RPM can offset such wear. It is noteworthy that no matter how much pressure is applied, it is most effective to complete the increase in applied force before the superabrasive particles become too blunt to pass through the polishing pad. The degree of increase in pressure and/or PRPM or stress can be readily determined by one of ordinary skill in the art by inspection of the cut pattern, inspection of the superabrasive particles, estimation of wear of the superabrasive particles, and the like. The amount of stress applied will also depend on the size of the dresser, the mechanical characteristics of the dresser, and the type of polishing performed. 'Although these variables are available, it is still unclear how much the pressure and/or RPM should be adjusted. It is put into practice, but those skilled in the art will be able to quickly determine the variables required for pressure and/or RPM for a particular polishing process once they have learned the contents of the present disclosure. However, in a particular aspect, the pressure and/or rPm between the CMp polishing pad and the CMP pad dresser may increase by about 1% to about 100%; in another particular aspect, the pressure and/or rPM Will increase by about 1% to about 50%; in yet another particular aspect, the pressure and/or rpm will increase by about 1% to about 20%; in yet another particular aspect, the pressure and/or RPM will increase. From about 1% to about 1 〇〇 / 〇; in another particular aspect, the increase in pressure and / or RPM will be less than about 5 〇 / 〇; and in a particular aspect, the pressure ® and / or The increase in RPM will be greater than about 1 〇〇〇 /. . It should be understood that 'changing the pressure and/or: RPM also includes reducing the pressure and/or RPM, especially those that have ultra-abrasive particles with little or no wear. Sharp superabrasive particles are often cut into the CMP pad to a depth deeper than the depth required to maintain the crack. This "overdressing" causes the superabrasive particles to wear too quickly. When the superabrasive particles are too sharp, the overall wear of the particles is reduced by reducing the pressure and/or RPM between the polishing pad and the dresser to extend the life of the dresser. 12 201024029 The timing and extent of pressure and/or rpm between the CMP pepper pad conditioner and the CMP pad can help determine the degree of wear of the superabrasive particles. Various methods for determining the degree of wear of the superabrasive particles are contemplated, and are considered to be within the scope of the present invention, and such measurements can be estimated for actual measurements or based on calculated or assumed wear patterns. Therefore, when the wear of the superabrasive particles is occurring or has occurred and is determined, the stress or pressure and/or RPM' applied between the C Μ P pad conditioner and the CMP pad can be changed accordingly. The CMP pad surface maintains a more appropriate surface roughness state (eg, depth, width, density, etc.). In one aspect of the invention, determining the extent of wear of the superabrasive particles can include testing a surface of a CM P polishing pad that has been trimmed, and the depth, width, density, etc. of the surface of the CMP polishing pad can be provided to provide a typical Some indication of the extent to which the knowledgeer wears the superabrasive particles. One advantage of this test method is that the wear of the superabrasive particles can be estimated without removing the dresser from the polishing apparatus. This test can be visually observed with the naked eye and can be accompanied by an amplifying device or other device that clearly shows the CMP pad. The way the surface structure is formed can also be done without this; the inspection can also be done automatically by visual imaging or mechanical measurement. As described above, in another aspect of the present invention, determining the wear energy of the superabrasive particles is performed by measuring the mechanical properties of the polishing pad, the dresser or a combination thereof, and the measured mechanical properties are selected from In the group consisting of: friction, acoustic radiation (acoustjc emiSSjon), temperature, polishing pad reflectivity ~ polishing pad flexibility (1) Rabbi 丨丨丨 factory polishing pad elasticity (5) (four) 丨 ... illusion and combinations . Thus, in one aspect, the measured mechanical properties are frictional; in another aspect, the measured mechanical properties are acoustic radiation. 13 201024029 In another aspect, the measured mechanical property is temperature; in yet another aspect, the measured mechanical property is polishing pad reflectivity; in one aspect, the measured mechanical The property is the polishing pad flexibility; in one aspect, the measured mechanical properties are the polishing pad elasticity. In fact, any aspect of the pattern of surface roughness can be used to assess the extent of wear of the superabrasive particles and to promote changes in pressure and/or RPM. The polishing speed can be promoted by changing the cutting pressure and/or RPM to improve the characteristics of the pattern of at least one surface roughness. The slurry can be more effectively retained on the surface of the CMP pad and more uniformly distributed. And increase the life of the dresser. In one aspect, when the average surface roughness density of the surface of the CMP pad is lowered, the pressure and/or rPM is increased, and the density of the decrease is due to factors such as an increase in width and a decrease in length. It may cause the superabrasive particles to not cut efficiently. The blunt superabrasive particles can only intermittently cut the surface of the CMP pad such that the surface roughness is reduced. In another aspect, when the CMP pad surface exhibits a reduced average® surface roughness depth, Then the pressure and / or RPM will increase. When the superabrasive particles begin to become dull, they no longer have sharp tips and edges that are capable of cutting deep, surface roughness. By increasing the cutting pressure and/or RPM, the superabrasive granules are more pressed into the CMP polished enamel surface and more evenly distributed, thereby enabling the deeper surface roughness to be cut to retain more slurry. In yet another aspect, the pressure and/or RPM increases as the average surface roughness width of the CMP pad surface decreases. As described above, when the superabrasive particles are worn, their tips and edges become smooth and smooth, and as the tips and edges gradually wear out and disappear, the particles begin to cut the surface roughness of the wider 201024029, which is reflected in the current wear. surface. Although increasing the pressure and/or RPM does not reduce the width to the extent of the surface roughness width before passivation, it is capable of cutting deeper surface roughness, thus retaining a larger amount of slurry during polishing. In still another aspect, the pressure and/or RPM may increase as the CMP pad surface exhibits a reduced average surface roughness length. When the tips and edges of the superabrasive particles wear, they tend to locally deform the surface of the CMp polishing pad rather than cutting the surface roughness thereon, and therefore, the worn superabrasive particles tend to be intermittently cut and The surface is deflected, and the surface roughness of the average length is reduced. The average depth of the surface roughness on the surface of the polishing pad is increased by increasing the depth of the cut by increasing the pressure and/or RPM of the superabrasive particles. In addition, if the surface roughness of the CMP polished surface is deeper, wider, longer or denser, that is, it is required to retain the characteristics of the slurry, reduce the pressure between the polishing pad and the dresser and / Or RPM can reduce the degree of wear of the superabrasive particles and thus extend the life of the dresser. ® Another method of determining the degree of wear of the superabrasive particles can include detecting at least a portion of the superabrasive particles disposed on the surface of the dresser. While direct inspection of the superabrasive particles necessitates removal of the dresser from the surface of the .CMP polishing pad, this inspection provides a more accurate assessment of the dresser surface than the cutting pattern with only the viewing tool. After this evaluation, the pressure and/or RPM applied by the dresser to the surface of the CMp polishing pad can be varied corresponding to the amount of wear of the observed superabrasive particles. Another method for determining the degree of wear of the superabrasive particles includes estimating the wear of the superabrasive particle mill based on the use of the trimmer. Over time, a person of ordinary skill in the art in the field of 2010 20102929 is able to estimate the pattern of wear of the superabrasive particles based on the wear pattern of the previous CMP pad dresser, which in many cases is due to its cost-effective nature. It has been found to be helpful to change the pressure and width or RpM of the CMp pad conditioner and the surface of the pad by estimating the superabrasive grain wear pattern, thereby avoiding the need to detect the CMP pad by stopping the polishing process. The case of superabrasive particles on the surface or in the dresser. Various changes to the pressure of the CMP pad dresser and the pad surface and/or RPM 6 can be considered, and all methods are considered to be within the scope of the present invention. For example, in one aspect, changing the pressure and/or RpM includes manual adjustment. When the superabrasive particles on the dresser have been determined to be worn, the pressure and/or RPM can be considered to be changed manually, thus offsetting this wear condition, which can occur when viewing the polishing pad. Surface roughness of the surface, detection of the condition of superabrasive particles on the dresser or after estimating the amount of wear based on the use of the dresser. It is also possible to consider automated changes in the pressure and/or RPM of the CMP pad dresser and the polishing pad surface. Various methods of automated modification are possible, including automatic observations based on observations of superabrasive particle honing, prediction of superabrasive particle wear, prediction of superabrasive particle wear, etc., which may include observation of superabrasive particles after automatic addition. Notice of wear and tear; or,
當所使用之修整器達到超研磨顆粒磨損的估計程度準點， 則可增加該壓力和/或RPM。在一態樣中，能利用電腦自動 控制改變該壓力和/或RPM，此電腦控制可容許增高的壓力 和/或RPM被施加在大量且須被拋光的晶圓上，因此，在 一態樣中，當該等超研磨顆粒尖銳時，該壓力和/或RPM 16 .201024029 在開始時能藉由非常小的增加量而増加，並在其開始純化 後逐漸藉由較大的量來增加。例如，該壓力和/或在 最初500片晶圓被拋光時增加約1〇/〇，再於接下來的5〇〇 片晶圓被拋光時增加5%，又於接下來的5〇〇片晶圓被拋光 時增加10%等。在另-態樣中，電腦控制能為各個接續的 晶圓增加該壓力和/或RPM,以更有效地延長該拋光墊的使 用壽命。 其他壓力和/或RPM的增加方法可包括增加該壓力和/ φ 或RpM而無關實際或估計磨損的情形。在一態樣中，當修 整器在使用時，在該拋光墊和修整器之間的壓力和/或RpM 可依時間而逐漸增加，例如，在一態樣中，在該拋光墊和 修整器之間的壓力和/或RPM是隨修整操作而增加。在一 些情形中，當該拋光墊正在修整晶圓時，且修整器係間歇 性修整該抛光塾，則該壓力和/或RPM是於正在進行拋光 之一或多個修整操作之後增加；該壓力和/或RPM也能在 修整器之各修整操作後增加；在另一態樣中，該壓力和/或 ® RPM可在修整操作時增加。如此則能致使在修整器正接觸 並主動修整該拋光墊時，增加該拋光墊和修整器之間的壓 力和/或RPM。又於另一態樣中，於拋光墊和修整器之間的 壓力和/或RPM會在一晶圓拋光完成後增加。該壓力和/或 RPM可在一组數量的晶圓拋光之後增加，或可在拋光各晶 圓之後增加。 逐漸增加該壓力和/或RPM之各種非限制性的範例包 括線性增加、非線性增加、指數或對數增加、階梯式増加 等。該方法提供無需要求檢測或估計步驟以確認超研磨顆 17 201024029 粒之磨損的優點，除此之外，壓力和/或RPM能夠預先在 磨損情形之前增加。在此情況下’能藉由預先改變而增加 一 CMP抛光墊修整器的使用壽命，而非依照超研磨顆粒磨 損的結果改變壓力和/或RPM。 各種改'變壓力和/或RPM的方法也可包括自動偵測現 象’如上所述可為超研磨顆粒磨損的特定標準。例如，當 在修整器上的超研磨顆粒開始變得鈍且圓滑時，在修整器 與拋光墊之間的摩擦力會增加。在一態樣中，這種因為超 〇 研磨顆粒變鈍而導致的磨擦力增加可被偵測，且在拋光墊 和修整器之間的壓力和/或RPM會為了補償而增加。 在另一實施例中，延長一用於修整化學機械拋光墊且 具有一基座和複數設置於其上的超研磨顆粒之化學機械拋 光塾修整器的方法包括藉由該修整器修整該化學機械拋光 墊，其中抛光墊、修整器、被該抛光墊拋光之晶圓或任何 其組合的元以一實質上平行於該拋光墊之工作表面的方向 振動，以使拋光墊:、修整器、晶圓或其組合上的機械應力 © 最小化；以及改變在拋光墊和修整器之間的壓力和/或 RPM ’包括當修整:器在使用時隨著時間以非線性的方式逐 漸增加該拋光墊和修整器之間的壓力和rPM ,以延長修整 器壽命，其中當化學機械拋光墊表面出現磨損時:，該壓力 和：RPM係增加的》 除了改變壓力和/或RPM之外，本發明人已經發現在 規律的調整周期中給予一 CMP拋光墊修整器之研磨顆粒相 當的振動能減少賦予超研磨顆粒的拖曳係數（d「ag coefficient) ’進而能帶給CMP拋光墊和修整器本身許多好 18 201024029 處。例如，減少之拖曳係數可產生具有實質上高度一致的This pressure and/or RPM can be increased when the trimmer used achieves an on-time estimate of the wear of the superabrasive particles. In one aspect, the pressure and/or RPM can be changed using computer automatic control, which allows for increased pressure and/or RPM to be applied to a large number of wafers to be polished, thus, in one aspect In the case where the superabrasive particles are sharp, the pressure and/or RPM 16 .201024029 can be initially increased by a very small increase and gradually increased by a larger amount after it begins to be purified. For example, the pressure and/or an increase of about 1 〇/〇 when the first 500 wafers are polished, and then 5% when the next 5 wafers are polished, and the next 5 〇〇 The wafer is increased by 10% when polished. In another aspect, computer control can add this pressure and/or RPM to each successive wafer to more effectively extend the life of the polishing pad. Other methods of increasing pressure and/or RPM may include increasing the pressure and /φ or RpM regardless of actual or estimated wear. In one aspect, when the dresser is in use, the pressure and/or RpM between the polishing pad and the dresser may gradually increase over time, for example, in one aspect, in the polishing pad and dresser The pressure and/or RPM between them increases with the trimming operation. In some cases, when the polishing pad is trimming the wafer and the trimmer intermittently trims the polishing flaw, the pressure and/or RPM is increased after one or more trimming operations are being performed; And/or the RPM can also be added after each trimming operation of the dresser; in another aspect, the pressure and/or RPM can be increased during the trimming operation. This can result in increased pressure and/or RPM between the polishing pad and the dresser as the dresser is in contact and actively trimming the polishing pad. In yet another aspect, the pressure and/or RPM between the polishing pad and the dresser will increase after polishing of the wafer. The pressure and/or RPM can be increased after a set of wafers is polished, or can be increased after polishing each wafer. Various non-limiting examples of gradually increasing the pressure and/or RPM include linear increases, non-linear increases, exponential or logarithmic increases, stepwise additions, and the like. This method provides the advantage of not requiring a test or estimation step to confirm the wear of the superabrasive particles, and in addition, the pressure and/or RPM can be increased before the wear condition. In this case, the life of a CMP pad conditioner can be increased by pre-changing, rather than changing the pressure and/or RPM as a result of wear of the superabrasive particles. Various methods of modifying the pressure and/or RPM may also include the automatic detection of the phenomenon' as described above, which may be a specific criterion for wear of the superabrasive particles. For example, as the superabrasive particles on the dresser begin to become dull and smooth, the friction between the dresser and the polishing pad will increase. In one aspect, this increase in friction due to the bluntness of the super-abrasive particles can be detected and the pressure and/or RPM between the polishing pad and the dresser will increase for compensation. In another embodiment, a method of extending a chemical mechanical polishing 塾 trimmer for conditioning a chemical mechanical polishing pad and having a pedestal and a plurality of superabrasive particles disposed thereon includes trimming the chemical mechanical device by the trimmer a polishing pad, wherein the polishing pad, the trimmer, the wafer polished by the polishing pad, or any combination thereof is vibrated in a direction substantially parallel to the working surface of the polishing pad to cause the polishing pad:, trimmer, crystal The mechanical stress on the circle or combination thereof is minimized; and the pressure and/or RPM between the polishing pad and the dresser is changed. Included when the dressing is used, the polishing pad is gradually increased in a non-linear manner over time. Pressure and rPM between the dresser and the trimmer to extend the life of the dresser, where wear occurs on the surface of the chemical mechanical polishing pad: the pressure and: RPM is increased. In addition to changing the pressure and/or RPM, the inventor It has been found that the equivalent vibration of the abrasive particles imparted to a CMP pad dresser during a regular adjustment cycle reduces the drag coefficient (d "ag coefficient" of the superabrasive particles. Bring CMP pad dresser itself and at much better 18201024029. For example, to reduce the coefficient of drag can be produced having a substantially uniform height
CMP拋光墊表面粗糙度以及具有實質上深度一致的cmP 拋光墊之槽或溝。除此之外，本發明人發現具有這種性質 的CMP拋光墊有更可預期的拋光速率，並且能促進更高品 質之被修整的晶圓。其他來自減少之拖曳係數的優點是Cmp 拋光墊能具有延長之使用壽命以及減少該等超研磨顆粒的 磨損。 振動該CM P裝置（包括任何部分的〇ΜΡ拋光墊、CM P ❹拋光墊修整器或晶圓）也減少材料的滯滑（stick_Slip)效應， 也就是說振動彼此相互接觸的拋光墊、修整器和/或晶圓能 減少可能有害的接觸。通常材料會傾向於彼此貼附（源於磨 擦力的因素）之後再鬆脫，在大多數移動的應用中，此效應 並非不利、具損害性或甚至是個妨礙，然而，在處理具有 适種對於厚度和表面變異性有高度耐受性的材料時這些 滯滑效應會非常不利。包括更為有效地拋光和修整，而振 動的CMP且在兩個製程中能夠因為減少之滯滑而皆會有較 ® 少的撕裂和變形，更能藉著振動讓研磨漿（若完全使用時)消 耗減少而增加此製程的效能，該振動能讓研磨漿顆粒在被 移除前被使用更多次’並減少滯滑效應的結果。 已經發現該等顆粒的振動式移動能有效促進該等顆粒 的磨損’也促進一 CMP拋光墊的復原性質，就功能上來說， 振動能降低拋光墊材料的量以及與該等超研磨顆粒接觸的 頻率。當該等超研磨顆粒以超音速振動並切割至該Cmp拋 光塾中’材料一致的部份會在該等超研磨顆粒的兩側被取 代’因此產生均勻的表面粗糙度高度，以促進晶圓的均勻 201024029 拋光。此外’最小化的拖曳係數能藉由在一修飾（gr〇〇mjng) 程序中限制與該CMP拋光墊材料接觸的量而降低磨損，並 延長該等超研磨顆粒的使用壽命。 因此，降低CMP拋光墊顆粒上的拖曳係數的方法，能 使CMP拋光墊表面粗糙度產生具有實質上均勻高度和具有 均勻深度之槽。均勻的高度和深度能藉由施加與修整器顆 粒特定的振動而產生。特別地是，該等顆粒能以橫向、圓 形、橢圓形或其他隨機且實質上平行於該CMP拋光墊之工 〇 作表面的運行而振動。在本發明之一態樣中，該等顆粒為 橫向振動’即邊對邊（side to side)，使得拖曳情形因著與 拋光墊接觸量的減少而能夠減少。已知當顆粒實質上平行 於該CMP拋光墊之工作表面振動，而非垂直地振動或垂直 於該拋光墊之工作表面，更能使拖曳量明顯地減少，因此， 能夠獲得很多CMP拋光墊以及修整器的優點，使得表面粗 糙度尺寸均勻化和最小化。 振動器或振動來源可放置在CMP裝置的各種位置，該 © 振動器可接合在CMP拋光塾的任何位置，以一實質上平行 : '於該CMP拋光墊工作表面的方向產生振動。例如包括結合 或麵接於該CMP拋光墊的側邊或周圍、結合至該〇ΜΡ抛 光墊底面的任何部分（即於工作表面反向側的拋光墊基座）、 結合至該C Μ P拋光墊的側邊’包括以任何型態結合至該 CMP拋光墊（即桿體、襯裡（backing))等。同樣地結合至 該CMP拋光墊修整器可結合至該基座的側邊、該工作表面 的周圍、該修整器的底面、在桿體或其他包裝物等。結合 至晶圓可以藉由裝置（如護環）結合至晶圓，或藉由任何於所 20 .201024029 屬技術領域熟知的技術直接結合至晶圓。 在本發明中’該CMP拋光墊修整器或CMP拋光墊至 少有一輕接於該修整器的振動器，其係設置在能夠以一實 質上平行於與該CMP拋光墊修整器接合之CMP拋光墊工 作表面的方向振動該修整器。雖然需要複數振動器讓超研 磨顆粒得到適當的振動，但也可僅以一振動器能耦接於該 CMP拋光墊修整器.伴隨振動器的使用，該振動器能在該 CMP拋光墊修整器之超研磨顆粒上產生振動，而後減少拖 ® 曳係數。該振動器可為任何能夠產生在此所述有益之振動 的類型。可使用任何電子/機械式驅動系統以產生想要的振 動，根據本發明之一態樣，該振動器可為具有壓電材料的 變送器（transducer)，或者，該振動器可為具有導電電線之 線圈的螺線管（solenoid)，這些實施例並無特別的限制，其 他振動器型態皆能使用。在其他實施例中，複數振動器（如 超音波變送器、螺線管或其組合）能耦接於該修整器位於以 實質上平行於該CMP拋光墊工作表面的方向振動該修整器 〇和顆粒的位置。該振動可為方向性集中或擴散。除此之外， 能藉由放大器而放太振動或藉由阻:尼板（如壓克力板）而減弱 振動。在一些態樣中，該振動可被方向性地控制，包括能 夠使用前後方向τ圓形、正方形、八邊形、矩形、三角形 或其他簡單或複雜之方向性振動運動（m〇vement)與圖案。 可用多於一個的振動器。在一實施例中，該等振動器 可設計而產生對稱的振動，而達到共振。在另一實施例中， 從複數振動源來的振動為非對稱的，因此產生的變化性可 跨越該拋光墊和/或晶圓。一部分的抛光墊有最小消耗量是 21 201024029 有利的，因此該等振動在此區域中會被加強，使得該拋光 墊外觀有平坦的效果。這種設計能平衡拋光墊的使用，且 有助於使晶圓呈現更均勻的厚度或更平坦的表面。 本發明所使用的頻率範圍約從1 KHz至約1 〇〇〇 KHz ; 功率範圍可從約1 W至約1000 w。如先前所述，賦予該CMP 拋光墊修整器之超研磨顆粒的振動來自於振動器或振動方 式（如壓電變送器）’在使用時，除了先前所述的方向之外， 該CMP拋光墊修整器或CMP拋光墊能夠以實質上平行於 Ο 該CMP拋光墊之工作表面進行橫向、圓形、橢圓形或隨意 動作的振動；或者’該振動可完全以平行該CMP拋光墊之 工作表面的方向進行。該壓電變送器適合以大於約15 KHz 的超音波頻率振動該等顆粒，通常高於人耳所能聽到的頻 率（即高於約每秒1 5,000次）會被視為超音波。在一實施例 中’該振動器能以約20 KHz的頻率震盪該等顆粒。 在又一實施例中’該超音波振動可大大地促進在該CMP 拋光墊上分散研磨漿的程序。研磨漿顆粒（那些作為部分研 ❹ 磨漿以在CMP製程中提供幫助或那些已將要研磨之物體移 除的顆粒）傾向於反向影響該拋光製程。這些顆粒能建立在 部分的· CMP拋光塾，.並且刮蝕欲被拋光的物體（如晶.圓）。 超音波振動能分散研磨漿顆粒，並提供機械動力以更有效 地移除硬化（glazed)材料以及碎屑。 在本發明之另一實施例中，該振動器能被調整為控制 該等超研磨顆粒振動運動，以及各顆粒的拖夷係數，以獲 得最適化的拋光過程。控制或調整超音波波長的振動頻率、 振幅或二者能改變所使用之CMP拋光墊修整器的拋光效 22 -201024029 能，特別的是，較高的頻率能產生具有較高突起和/或較深 之槽的表面粗糙度；或者增加該超音波振動的振幅也會影 響表面粗糙度的尺寸，而能產生讓更多研磨漿進入該拋光 墊表面的表面粗糙度’因此增加系統整體的拋光效能。實 際上，控制該振動頻率以及振幅會改變各修飾（gr〇〇ming) 之超研磨顆粒的拖^係數，進而改變各表面粗糖度的尺寸， 能實施這種實施例而使各種應用獲得最理想的拋光效能。 例如’對於易碎之晶圓表面的氧化層最理想的拋光需要增 加頻率以及減少振幅；另一方面，降低振動頻率與增加振 幅能更有效地拋光晶圓上的金屬層（如銅電路）。再者，當其 他聚氨酯型材料使用於形成一 CMP拋光墊，且其在拋光墊 修整程序中呈現不同反應時，控制振動特性是必須的。 在一實施.例中，該振動能為持續性的或間歇式的。除 此之外，該振動能作為複數步驟中的一部分而被執行，或 者作為一個在拋光程序中的特定時間選擇不同振動參數的 程序（program)，該等振動參數包括但不限制在頻率、振幅 和來源；通常大的振幅能產生較快的移除速度，但伴隨著 較大的損壞可.能性’而高頻率低振幅能夠較慢地拋光，且 伴隨著較佳的研磨效果。因此，能夠合理得知一個抛光程 序開始於大的振幅，而後改轡*古艏 雯馬两頻率低振福的振動能有 助於在較快的時間内產生已描去以 反王匕拋先材枓，且比使用一組振動 參數具有較佳的研磨效果。該程庆能 邊程序能夠持績性地改變，如 從大的振幅隨著時間改變為、的接 馬小的振幅’或者能夠隨著相異 及不同的階段而改變，如從女挺 從大振幅立即改變為小振幅，而 在此改變進行中可有或無暫停時間。 23 201024029 舉例來說’在移除銅的情況下，能控制該CMP程序於 一開始銅表面還很粗糖的時候以高振幅低頻率快速地移 除，而後當端點接近則立即（ramped down)轉換至高頻率低 振幅，例如當在銅層下的氮化组屏障層暴露出來的時候。 再者’該等振動參數能夠依照特定條件的協調性而修飾， 例如研磨漿的添加、研磨漿的黏度、新的晶圓、不同的晶 圓類型、新的或不同的拋光墊調整器或修整器、以及其他 能夠反應影響抛光塾情況的變數。在另·—態樣中，該等振 〇 動可產生至少部分CMP拋光墊的溫度增加至少約5» C; 在另一實施例中，溫度增加至少20。C。除此之外，當本 發明使用各種壓力、RPM以及振動的方法能在延長化學機 械拋光墊修整器的使用壽命方面產生協同效應。 需要瞭解的是以上所述之組成以及方法皆僅是在描述 本發明的較佳實施例，許多改變及不同的排列亦可以在不 脫離本發明之精神和範圍的情況下被於本領域具通常知識 者所設想出來，而申請範圍也涵蓋上述的修飾和排列。 ® 【圖式簡單說明】 第一圖係超研磨顆粒顯示幾乎無磨損的照片。 第二圖係超研磨顆粒顯示些徽磨損的照片。. 第三圖係描述本發明一實施例的超研磨顆粒，並描述 該等超研磨顆粒產生之可能的（potential)切割圖案。 第四圖係描述本發明一實施例隨時間的研磨速率和缺 陷計數的範例。 【主要元件符號說明】 24 201024029 (10) 超研磨顆粒 (12) 表面粗度 (14) CMP拋光墊 (16) 磨損 (18) 表面粗链度 (20) 嚴重磨損 (22) 表面粗縫度 (30) 拋光速率 (32) 缺陷數量 25CMP pad surface roughness and grooves or grooves of a cmP pad with substantially uniform depth. In addition, the inventors have found that CMP pads having this property have a more predictable polishing rate and can promote higher quality wafers to be trimmed. Other advantages from reduced drag coefficients are the ability of the Cmp polishing pad to have an extended life and reduce the wear of such superabrasive particles. Vibrating the CM P device (including any part of the 〇ΜΡ polishing pad, CM P ❹ polishing pad conditioner or wafer) also reduces the stick_Slip effect of the material, ie the polishing pad, the trimmer that vibrates in contact with each other And/or wafers can reduce potentially harmful contact. Usually materials tend to stick to each other (derived from frictional forces) and then loosen. In most mobile applications, this effect is not unfavorable, damaging or even a hindrance, however, These slip-slip effects can be very detrimental when the thickness and surface variability are highly tolerant materials. Including more efficient polishing and finishing, and vibrating CMP and in the two processes can reduce tear and deformation due to reduced slip, and can make the slurry by vibration (if fully used) The reduction in consumption increases the effectiveness of the process, which allows the slurry particles to be used more times before being removed and reduces the hysteresis effect. It has been found that the vibratory movement of the particles effectively promotes the wear of the particles' also promotes the resilience properties of a CMP pad which, functionally, reduces the amount of polishing pad material and the contact with the superabrasive particles. frequency. When the superabrasive particles vibrate at supersonic speed and cut into the Cmp polishing crucible, the 'material-consistent portion will be replaced on both sides of the superabrasive particles', thus producing a uniform surface roughness height to promote the wafer Uniform 201024029 polished. In addition, the minimized drag coefficient can reduce wear and extend the useful life of the superabrasive particles by limiting the amount of contact with the CMP pad material in a modified (gr〇〇mjng) procedure. Therefore, the method of reducing the drag coefficient on the CMP pad particles enables the surface roughness of the CMP pad to produce grooves having a substantially uniform height and a uniform depth. Uniform height and depth can be created by applying specific vibrations to the trimmer particles. In particular, the particles can vibrate in a lateral, circular, elliptical or other manner that is random and substantially parallel to the surface of the CMP pad. In one aspect of the invention, the particles are laterally vibrating, i.e., side to side, such that the drag condition can be reduced due to a reduction in contact with the polishing pad. It is known that when the particles vibrate substantially parallel to the working surface of the CMP pad, rather than vibrating perpendicularly or perpendicular to the working surface of the pad, the amount of drag can be significantly reduced, thus, many CMP pads can be obtained and The advantages of the dresser are to make the surface roughness size uniform and minimize. The vibrator or source of vibration can be placed at various locations on the CMP device that can be engaged anywhere in the CMP polishing pad to be substantially parallel: 'Vibrate in the direction of the CMP pad working surface. For example, including any portion that is bonded or surfaced to the side or periphery of the CMP pad, bonded to the bottom surface of the crucible polishing pad (ie, the polishing pad base on the opposite side of the working surface), bonded to the C Μ P polished The side edges of the pad include bonding to the CMP pad (i.e., the body, backing), etc., in any pattern. Also incorporated into the CMP pad dresser can be bonded to the side of the base, around the work surface, to the bottom of the dresser, to the body or other wrapper, and the like. Bonding to the wafer can be coupled to the wafer by means of a device such as a guard ring or directly to the wafer by any of the techniques well known in the art. In the present invention, the CMP pad dresser or CMP pad has at least one vibrator that is lightly attached to the dresser, and is disposed in a CMP pad that is substantially parallel to the CMP pad dresser. The dresser is vibrated in the direction of the work surface. Although a plurality of vibrators are required to allow the superabrasive particles to be properly vibrated, only a vibrator can be coupled to the CMP pad dresser. With the use of a vibrator, the vibrator can be used in the CMP pad dresser. The super-abrasive particles generate vibrations and then reduce the drag coefficient. The vibrator can be of any type capable of producing the beneficial vibrations described herein. Any electronic/mechanical drive system can be used to generate the desired vibration. According to one aspect of the invention, the vibrator can be a transducer having a piezoelectric material, or the vibrator can be electrically conductive. The solenoid of the coil of the electric wire is not particularly limited in these embodiments, and other vibrator types can be used. In other embodiments, a plurality of vibrators (such as ultrasonic transducers, solenoids, or a combination thereof) can be coupled to the trimmer to vibrate the trimmer in a direction substantially parallel to the working surface of the CMP pad. And the location of the particles. This vibration can be directional or concentrated. In addition to this, the vibration can be attenuated by the amplifier or by a resist: a plate (such as an acrylic plate). In some aspects, the vibration can be directionally controlled, including the ability to use front and rear directions τ circular, square, octagonal, rectangular, triangular, or other simple or complex directional vibrational motions and patterns. . More than one vibrator can be used. In one embodiment, the vibrators can be designed to produce symmetrical vibrations to achieve resonance. In another embodiment, the vibration from the plurality of vibration sources is asymmetrical, and the resulting variability can span the polishing pad and/or wafer. A portion of the polishing pad has a minimum consumption of 21 201024029, so the vibrations are reinforced in this area, giving the polishing pad a flat appearance. This design balances the use of the polishing pad and helps to present a more uniform thickness or flatter surface to the wafer. The frequency range used in the present invention ranges from about 1 KHz to about 1 〇〇〇 KHz; the power range can range from about 1 W to about 1000 W. As previously described, the vibration of the superabrasive particles imparted to the CMP pad dresser comes from a vibrator or a vibratory mode (e.g., a piezoelectric transducer) that, in use, is CMP polished in addition to the directions previously described. The pad conditioner or CMP pad can perform lateral, circular, elliptical or random motion vibrations substantially parallel to the working surface of the CMP pad; or 'the vibration can be completely parallel to the working surface of the CMP pad The direction is proceeding. The piezoelectric transducer is adapted to vibrate the particles at an ultrasonic frequency greater than about 15 KHz, which is generally higher than the frequency that can be heard by the human ear (i.e., above about 5,000 times per second). In one embodiment, the vibrator can oscillate the particles at a frequency of about 20 KHz. In yet another embodiment, the ultrasonic vibration can greatly facilitate the process of dispersing the slurry on the CMP pad. Slurry particles (those that are part of the mortar refining to aid in the CMP process or those that have been removed) tend to adversely affect the polishing process. These particles can be built up in part of the CMP polishing flaw, and the objects to be polished (such as crystals and circles) are scraped. Ultrasonic vibration disperses the slurry particles and provides mechanical power to more effectively remove the glazed material as well as debris. In another embodiment of the invention, the vibrator can be adjusted to control the vibrational motion of the superabrasive particles, as well as the drag coefficient of each particle, to achieve an optimized polishing process. Controlling or adjusting the vibration frequency, amplitude, or both of the ultrasonic wavelengths can change the polishing effect of the CMP pad dresser used. 22-201024029 can, in particular, produce higher protrusions with higher frequencies and/or The surface roughness of the deep groove; or increasing the amplitude of the ultrasonic vibration will also affect the size of the surface roughness, and can produce a surface roughness that allows more slurry to enter the surface of the polishing pad', thus increasing the overall polishing performance of the system. . In fact, controlling the vibration frequency and amplitude changes the drag coefficient of the super-abrasive particles of each modification, thereby changing the size of the coarseness of each surface, and the embodiment can be implemented to achieve optimal application. Polishing performance. For example, the ideal polishing of the oxide layer on the surface of a fragile wafer requires increased frequency and reduced amplitude; on the other hand, lowering the vibration frequency and increasing the amplitude can more effectively polish the metal layer on the wafer (such as copper circuitry). Furthermore, when other polyurethane type materials are used to form a CMP polishing pad and it exhibits different reactions in the polishing pad finishing process, it is necessary to control the vibration characteristics. In one embodiment, the vibrational energy is continuous or intermittent. In addition to this, the vibration can be performed as part of a plurality of steps, or as a program for selecting different vibration parameters at a particular time in the polishing process, including but not limited to frequency and amplitude. And source; usually a large amplitude can produce a faster removal speed, but with a large damage can be 'energy' and high frequency and low amplitude can be polished more slowly, with a better grinding effect. Therefore, it can be reasonably known that a polishing process starts at a large amplitude, and then the vibration of the two frequencies of low frequency vibrations can be improved in a faster time. And has a better grinding effect than using a set of vibration parameters. The program can be changed programmatically, such as from a large amplitude change with time to a small amplitude of the horse's or can change with different and different stages, such as from the female quite large amplitude immediately Change to a small amplitude, with or without a pause time while the change is in progress. 23 201024029 For example, in the case of copper removal, the CMP program can be controlled to be quickly removed at high amplitude and low frequency when the copper surface is still very coarse, and then immediately ramped down when the endpoint is close. Switching to high frequency and low amplitude, for example when the nitrided barrier layer under the copper layer is exposed. Furthermore, these vibration parameters can be modified according to the coordination of specific conditions, such as the addition of slurry, the viscosity of the slurry, new wafers, different wafer types, new or different polishing pad conditioners or trimming. And other variables that can react to the condition of the polished enamel. In another aspect, the isolating motion can produce an increase in temperature of at least a portion of the CMP pad by at least about 5»C; in another embodiment, the temperature is increased by at least 20. C. In addition, the present invention uses a variety of pressure, RPM, and vibration methods to create synergistic effects in extending the life of chemical mechanical polishing pad conditioners. It is to be understood that the above-described embodiments and methods of the present invention are intended to be illustrative of the preferred embodiments of the present invention, and many variations and different arrangements may be practiced in the field without departing from the spirit and scope of the invention. The knowledge is conceived, and the scope of the application also covers the above modifications and permutations. ® [Simple description of the diagram] The first picture shows superabrasive particles showing almost wear-free photos. The second picture shows super-abrasive particles showing photos of the emblem wear. The third figure depicts superabrasive particles in accordance with an embodiment of the present invention and describes the potential cutting patterns produced by the superabrasive particles. The fourth figure depicts an example of the polishing rate and defect count over time in an embodiment of the present invention. [Main component symbol description] 24 201024029 (10) Superabrasive particles (12) Surface roughness (14) CMP polishing pad (16) Wear (18) Surface thick chain (20) Severe wear (22) Surface roughness ( 30) Polishing rate (32) Number of defects 25