TW201013606A - Active matrix substrate, display panel, display device and method for manufacturing active matrix substrate - Google Patents

Abstract

An active matrix substrate (101A) of the present invention includes a transparent substrate (10), transparent wirings (LG, LD, LP, L1, L2 and the like) formed on the transparent substrate, a transparent semiconductor layer (44) covering at least one part of the transparent wirings, and transparent insulation films (40, 50) covering at least one part of the wirings and the transparent semiconductor layer (44). The wirings contains main wirings (one part of 41 and the like) extending such that they intersects mutually in row and column directions, and sub-wirings (one part of 41, 42, 43 and the like) bifurcating from the main wirings and being connected to elements in each pixel (101a). These wirings are formed of, for example, a conductive material such as ZTO and ITO.

Description

201013606 VI. Description of the Invention: [Technical Field] The present invention relates to an active matrix substrate, a display panel, a display device, and a method for fabricating an active matrix substrate, and relates to a method comprising a transistor (especially a thin film electric solar body) An active matrix substrate, a display panel, a display device, and a method of manufacturing an active matrix substrate of a thin-f i lm transistor (TFT) device. [Prior Art] At the end of the year, it is a flat display represented by a liquid crystal display (LCD) device or an organic EL (Electro luminescence) display device, such as low power consumption, low driving voltage, and space saving. The development of Flat Panel Display devices is prevailing. In the FPD device, for example, a driving method such as a liquid crystal display device or an organic germanium display device is roughly classified into a static-moving method and a dynamic driving method, wherein the active-array driving method in which the skin is classified into the dynamic driving method is reduced. The crosstalk between the elements, and the clearer image reproduction, has attracted attention. When the active matrix driving method is implemented, it is generally used as a circuit board called a matrix board in which each of the books has one or more switching elements and capacitor elements. In the present description, the circuit substrate is referred to as a driving moment substrate. In the case of, for example, a liquid crystal display device, a liquid crystal element is provided between the active matrix substrate and the substrate. Here, the light emitted from the light source in the device passes through the active matrix substrate, the liquid crystal element, and the opposite substrate, but at this time, by applying an appropriate voltage to the liquid crystal element and controlling the molecules of the liquid crystal element Arranged as a color tone, a color scale, and the like. Further, in the case of, for example, an organic EL display device, an organic light-emitting diode of each pixel is provided on one of the principal faces of the active matrix substrate. Here, the light from the organic light emitting diode is recognized by the active matrix substrate (back light emitting type/bottom emission type), or is not reflected by the active matrix substrate (upper light emitting type/top emission type), but this is At the time of controlling the amount of current flowing through the fluorescent diode, the color tone, gradation, and the like of the image appear. From the above configuration, the active matrix substrate determines an important factor of the thickness of the panel portion of the FPD such as a liquid crystal display device or an organic EL display device. Therefore, the switching element of the active matrix substrate is generally a thin film element such as a TFT element, particularly a TFT element, in consideration of the thinning of the panel portion. In the development of an electrode material, a semiconductor material, or an insulating film material, a transparent TFT can be formed (see, for example, Non-Patent Document 1 shown below). II (Prior Art Paper) Non-Patent Document 1: Shinya Rif, et al., "Design of Amorphous Oxide Semiconductors and Formation of Room Temperature for High-Performance Flexible Films," 19th Advanced Technology Awards (online), Searched on April 9, 2008], Internet <URL. http://www.fbi~~award.jp/serrtan/;jusyou/2500/toko_canon. pdf > [Summary] (The invention wants to solve [Problem] Here, as a factor for determining a liquid crystal display device, an organic EL display device, or the like, there is an aperture ratio of the active matrix substrate. The f-port ratio is higher density or higher to correct the brightness of the material. The larger the aperture ratio, the higher the integration, high contrast, or high brightness. However, in the prior art, although the transparency of the transistor element in the active matrix substrate can be achieved, the transparency of the wiring portion cannot be achieved. The wiring system is required to be useful for realizing a large sectional area such as a power consumption of a liquid crystal display device or an organic display device or a reduction in driving voltage. Therefore, the non-transparent wiring portion limits the increase in the aperture ratio of the conventional active matrix substrate. Accordingly, the present invention has been made in view of the above problems, and an object thereof is to provide an active matrix substrate, a display panel, a display device, and a method of manufacturing an active matrix substrate which can increase an aperture ratio. In order to achieve the above object, according to the present invention, (1) an active matrix substrate comprising a plurality of transistor elements, comprising: a substrate for transmitting visible light; and wiring formed on the substrate And being transparent to visible light; the semiconductor layer is at least partially overlapped with the wiring as viewed from a thickness direction of the substrate, and is transparent to light, and an insulating film covering at least a portion of the wiring and the semiconductor layer, And can be used for visible light penetration. (2) The active matrix substrate according to the above aspect, wherein the wiring includes a main wiring, and a sub wiring that is branched from the main wiring and that is connected to the main wiring and the transistor. (3) The active matrix substrate according to (1) or (2) above, wherein the wiring of the 321390 6 201013606 is composed of an inorganic oxide conductor material. (4) In the active matrix panel according to any one of the above (1) to (3), the semiconductor layer is composed of an inorganic oxide semiconductor material (5) as in the above (1) to (4) In any of the active devices, the wiring system is composed of a tin oxide or a salt-containing oxide, and the semiconductor layer is composed of a carrier concentration. The active matrix substrate according to any one of the above (1) to (5), wherein the active matrix substrate according to any one of the above (1) to (5) is

One of the aforementioned wirings functions as an electrode of the above-described transistor element. The active matrix substrate according to any one of (1) to (6), wherein a part of the wiring is used as a gate electrode, a source electrode, and a drain electrode of the transistor element. It is a function that one of the insulating films functions as a gate insulating film of the transistor element. (8) The active matrix substrate according to any one of the above-mentioned (1) to (7), wherein the first and second transistors and the capacitor are provided with at least a portion of the scanning line of the wiring system. At least a part of the data line of at least the 曰P blade and the one or more drive lines, the control terminal of the first electric circuit is connected to the scanning line, and the input terminal is connected to the 曰^ line' and the second transistor The control terminal is connected to the input terminal of the jth electrical output terminal, and the input terminal is connected to the drive line. The capacitor side electrode is connected to the drive line, and the other terminal is connected to a control terminal of the second transistor. (9) The above-mentioned (1) to (7) towel--------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------- And at least one part of the capacitance line above the strip, and at least a part of the terminal is connected to the scan line, and the control of the wheeled body: the capacitor-sub-system is connected to the above == φ The first electrode and the second electrode are formed on the organic film by a & money film on the active matrix substrate. The second electric device is electrically conductive. (11) The display panel according to (10) above, wherein the electrode is transparent to visible light. (12) The display panel according to (a) above, wherein the auxiliary electrode is connected to the second electrode. The auxiliary electric device (13) is the display panel according to the above (12), wherein the electrode is transparent to visible light. The display panel according to any one of the above-mentioned (1), wherein the filter film formed on either or both of the upper layer and the lower layer with respect to the organic film is provided. (15) A display panel comprising: the active matrix substrate according to any one of (1) to (7), wherein the opposite substrate is transparent to visible light; and the liquid crystal element includes a liquid crystal layer And an aligning electrode and a common electrode sandwiching the liquid crystal layer and the laminated body comprising the laminate of the liquid crystal layer and the two alignment films; wherein the halogen electrode and the common current are 321390 8 201013606 The polar system is capable of penetrating visible light. The aforementioned halogen electrode system is electrically connected to the wiring of the active matrix substrate. The liquid crystal element is sandwiched between the active matrix substrate and the counter substrate. (16) The display panel according to the above aspect (15), comprising: two polarizing plates that sandwich the laminated body of the active matrix substrate, the liquid crystal element, and the counter substrate. The display panel according to the above aspect (15), wherein the light-shielding film formed on the common electrode and the filter formed on at least the common electrode and penetrating a wavelength of a predetermined frequency band are provided. membrane. (18) A display panel comprising the display panel according to any one of (1) to (17) above. (19) A method for manufacturing an active matrix substrate, comprising: a first wiring forming step 胄 for visible light penetration! The wiring is formed on the substrate through which the visible light can pass through, and the portion of the first wiring includes an electrode constituting the transistor element; and the first insulating film forming step forms the first insulating film on the substrate, and the first insulating film is formed on the substrate 1 insulation film is used to cover the above! At least the knives of the wiring and the division include the insulating film constituting the transistor element for transmitting visible light, and the second wiring forming step of forming the second wiring θ for allowing visible light to pass through! On the insulating film, a part thereof includes an electrode constituting the transistor element; and a semiconductor layer forming step of forming a semi-conductive layer for covering at least a part of the second wiring and allowing visible light to pass through the ith insulating layer And a second insulating film forming a second insulating film for covering at least a part of the semiconductor layer and the second wiring and allowing visible light to pass through the film, and formed on the insulating film of the aforementioned 32390 9 201013606 1 . (20) The method of producing an active matrix substrate according to (19) above, wherein the second wiring is formed using an inorganic oxide conductor material. (21) The method for producing an active substrate according to the above (10) or (2G), wherein the active matrix substrate according to any one of the items (10) to (2) of the semiconductor (10) is formed using an inorganic oxide semiconductor material. a manufacturing method in which 'the use of a zinc-tin oxide or an indium-containing oxide 2 conductive material _ into the aforementioned second wiring, and using a zinc tin oxide or a steel oxide-containing material which can lower the carrier concentration than the aforementioned wiring The foregoing semiconductor layer is formed. The manufacturing method according to any one of the preceding claims, wherein the semiconductor layer in which the second wiring is formed in the semiconductor layer is formed as described above:

The second wiring is not exposed to the front of the semiconductor layer. In the above-described (10) to (2)), the method for producing a semiconductor film, wherein the first wiring forming step is a film forming step, and the second portion is formed. The step and the second insulating film forming step are as follows: the first method, the method, to form two:: step: absolutely = (four), _ second turn, the front material phase, the second (the effect of the invention) 321390 10 201013606 The team is put in a %, and the field is made to be transparent in the active moment. Therefore, the opening of the silk substrate can be improved for the visible light, for the same reason, according to the present invention. The active matrix substrate is then upgraded. Moreover, the borrowing & aperture ratio is the base of the duck, and the active matrix of the large-sized tree can be realized. [Embodiment] A board and a display device. The following is a detailed explanation of the present invention with reference to the formula. The present invention is not limited to the following embodiments, and the drawings are only for the understanding of the content (4) of the present invention = the following description, size and positional relationship, and thus the shape of the present invention is not shown, Size and location relationship. In addition, each part is clearly clarified in each figure, and a part of the hatching of the section is omitted. The numerical values constituting the exemplifications are only preferred in the present invention: they are exemplified in the following description. The present invention is not limited to the embodiment (Embodiment 1). First, the display device of the first embodiment of the present invention will be described by taking an organic EL display crack as an example. Figure 1 is a block diagram showing the outline of an organic rainbow display. Further, in the present embodiment, a series of so-called back-illuminated type (bottom-emission type) organic materials are used to display a plurality of light-emitting elements (for example, the organic light-emitting diodes in FIG. 4). The light of the Μ) is output from the lower surface of the substrate (for example, the lower surface 1〇〇a in FIG. 4) to the outside via the element substrate (for example, the active matrix substrate 1〇u in FIG. 4). (Overall Configuration) As shown in Fig. 1, the organic EL display device 100 includes a display panel ιοί including a matrix of 321390 11 201013606 two-dimensionally arranged in a matrix, and is connected to the display panel 101. The scan driving unit 103, the data driving unit 104, the capacitance line driving unit 1 and the driving signal generating unit 1 〇β, and the signal control unit 102 for controlling each unit. Further, the display panel 1〇1 is provided with pixels 1〇la of three primary colors of red, green (G) and blue (B). Here, the display panel 101 includes scan lines LG1, 1G2, ..., Lgn connected to the scan driving unit and transmitting the scan number (hereinafter, any scan line is set to L<〇; connected to the data drive unit) 1〇4, and the data lines u, u, u, ..., Lm of the data signal are respectively transmitted (hereinafter, the line is set to Ld); connected to the capacitor line driving unit 1〇5, and respectively transmit the capacitance line driving signal The capacitance lines Lel, Le2, Le3, "., LeM (hereinafter any arbitrary capacitance line is set to Le); the drive lines Ln, LP2, U, ... which are connected to the drive signal generating portion (10) and respectively transmit drive signals Lpm (hereinafter, any scanning line is set to Lp). Each of the scanning lines LC1 to 1^ extends in a substantially column direction in the drawing, and each of the data lines 1 to LDM extends in a substantially vertical direction in the drawing. LG, to [, the poor material line Ldu is crossed in a two-dimensional matrix. Each element 101a is placed in the intersection of the two-dimensional matrix, and connected to the sweeping of the friction: and the data line Ld. The capacitance lines to the L(3) system are connected to the data line So in a book arranged at each intersection. (4) θ f ^ system and capital (4) 1 ^ to "substantially + 仃 extended, and connected to each intersection 101a. In the present embodiment, G, mD, capacitance lines will be in each other in each of the denier LC and the drive line 1^ The way of crossing is toward the row and column direction 321390 12 201013606 The extension part of the wiring is set to the Wei line, which will be divergent and connected to the switching transistor in the element 1〇la or the driving transistor Q2 or the electric 0 ^ ^ for example 2 The wiring portion of the element such as Fig.) is set as the sub wiring. The wiring (U, L2, etc.) between the 70 pieces is connected to the sub wiring. The nickname control unit 102 is based on the input from the outer wheel B and the display for controlling the display thereof, the plum number R, the G, the 绿 green deficiency H, the 旒 (the data enable signal DE, the water ❹ 产 production 4 This + direct synchronization signal ~ (3), the main clock ruler, etc.), generate scan control with read image reproduction = signal CONT2, capacitance line control signal pnMTq & Bessie control and video data signal DAT. ,, light control signal C0NT4

103. := = control signal (4) 1 is input to the scan drive unit W control W〇) NT1 includes a vertical synchronization start signal for indicating the start of the output of P 2:; and a gate clock signal for the output timing of the voltage V°n And to control the gate _ output period _ lose the new energy. In addition, in the ink = also useful for people to make the switch of the electric element included in each element of the ma is touching. Scan drive Γ 导 导 导 v v v 及 及 及 v v v v v v v v 扫描 扫描 扫描 扫描 扫描 扫描 扫描 扫描 扫描 扫描 扫描 扫描 扫描 扫描 扫描 扫描 扫描 扫描 扫描 扫描 扫描 扫描 扫描 扫描 扫描A signal 'and the scan into 5 ^, the data mother _ · 2 and the culvert (four) money DAT is attached to a drive unit 104. The data control signal C0NT2 includes a horizontal synchronization start signal for starting the input of the data # neck... or a load signal for the dog, the dog, the line, and the line Ld. The data driving unit _ 32139 〇 13 201013606 latches the received video data signal DAT according to the data control signal C0NT2, appropriately generates a data signal corresponding to the video data signal DAT, and inputs the data signal to the data line Ld. Further, the capacitance line control signal C0NT3 is input to the capacitance line driving unit 105. The capacitance line control signal C0NT3 is a signal for generating a capacitance line driving signal for driving the capacitance line Lc. The capacitance line driving unit 105 generates a capacitance line driving signal for driving the capacitance line Lc based on the capacitance line control signal C0NT3, and inputs the capacitance line driving signal to the capacitance line Lc. Further, the light emission control signal CONT4 is input to the drive signal generation unit ® 106. The light emission control signal C0NT4 is used to generate a signal for driving a driving signal for the organic light emitting diode D1 (refer to Fig. 2). The drive signal generating unit 106 is configured to generate a drive signal for causing the organic light-emitting diode D1 to emit light or not according to the light-emission control signal C0NT4, and input the drive signal to the drive line Lp. Further, the drive signal is input to the anode of the organic light-emitting diode D1 to be described later. Moreover, a common voltage is input to the cathode of the organic light emitting diode D1.

Vcom (see Figure 2). Therefore, in the present embodiment, the voltage level of the drive signal during the period in which the organic light-emitting diode D1 emits light is set to be higher than the voltage of the common voltage Vcom, and the voltage level of the drive signal in the period other than the above is set. The light-emitting/non-light-emitting of the organic light-emitting diode D1 is controlled to be the same as or lower than the common voltage Vcom. Here, the common voltage Vcom can be set to, for example, a ground potential. Furthermore, a power cord can be used instead of the drive line Lp. At this time, the drive signal generating unit 106 is omitted, and a power supply voltage is applied to the power supply line. 14 321390 201013606 (Nuclear composition) _· Next, the schematic configuration of each element 101a and its operation will be described using FIG. In addition, in the following description, the same is true for any of the elements 101a of R, G, and B. Fig. 2 is a schematic view showing the schematic circuit configuration of the halogen 101a. As shown in Fig. 2, the halogen 101a includes a switching transistor Q1, a driving transistor Q2, a capacitor C1, and an organic light-emitting diode D1. The switching transistor Q1 is, for example, an n-type TFT whose source S is connected to, for example, a sub-wiring in which the main wiring of the data line Ld is branched from the node N1, and the drain D is connected to the driving electric power via the wiring L1 including the node N1. Gate G of crystal Q2. Further, the gate G of the switching transistor Q1 is connected to, for example, a sub-wiring in which the main wiring of the scanning line Lg is diverged from the node N3. Therefore, the switching transistor Q1 turns on or off the data line Ld and the node N1 according to the voltage level Vg (scanning control voltage) of the scanning signal. In the wiring L1, one terminal of the capacitor C1 is connected via a wiring portion which is branched in, for example, the node N1 (this @ portion is also included in the wiring L1). The other terminal of the capacitor C1 is connected to, for example, a sub-wiring in which the main wiring of the capacitor line Lc is branched from the node N5. A capacitance line drive signal is applied to the capacitance line Lc from the capacitance line driving unit 105. The voltage level Vc (capacitor line drive voltage) of the capacitance line drive signal can be set to, for example, a ground potential. In other words, the capacitor line Lc can be set as a ground line. At this time, the capacitance line driving unit 105 can be omitted. Here, when the voltage level Vg (scanning control voltage) of the scan signal input to the scanning line Lg becomes a high level, the switching transistor Q1 is turned on, and the voltage level of the corresponding data signal is 15 via the switching transistor Q1. 321390 201013606 vd (= __ charge injection drive crystallization _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ The voltage level of the scanning line Lg is low and the switching transistor Q1 is completely turned into the _ state, and then the lower level = the level Vg becomes a high level and the switching transistor Qi becomes turned on: the period until the next data signal is entered. The function of the potential of the wheel 10 。, that is, the capacitor (4) is input to the data line ^ during the predetermined period. e threshold, the moving crystal Q2 is, for example, η-type m, and the nucleus is like a defect. In the N6, the sub-distribution from the main wiring of the drive line is connected to the anode of the organic hair #_S, + the Gunuyo male machine first-polar body D1 via the node N2. In addition, the risk of the organic light-emitting diode D1炻炻Μ... The pole has a common voltage Vcom ( For example, when the driving power 曰 曰斟 κ κ 田 田 罨 罨 罨 Q Q Q Q Q Q Q Q , , , , , , , , , , , , , , , , , , , , Q Q Q Q Q Q Q Q Q Q Q Q Luminance luminescence of the amount of current flowing to the organic hairpin. 2 = Electrical system: When the current is 1 state, (4) H-moving UQ2 is turned off to emit light. To the organic light-emitting diode D1, the layout structure and the W-map are not included. The details of each element 101a and the layer structure are described in detail. The 苐3 diagram is used to illustrate the schematic plan view of the layout structure of the active test=1_parameter_as shown in Fig. 4 to explain the layer structure of the pixel. A schematic cross-sectional view. On the other hand, in the third drawing, the configuration of the insulating films 40 and 50 between the transparent substrate 10 and the layers 321390 16 201013606 is omitted for the purpose of the current day (see, for example, Fig. 4). Fig. 4 is a schematic view showing the outline of the element 101a of the cut end surface of A-A' in Fig. 3 continuously. In the following description, for the clarification of the description, the same type of film of the same layer is denoted by the same reference numeral. As shown in FIG. 3 or FIG. 4, the halogen 101a includes an active matrix substrate 101A as an array substrate (see, for example, FIG. 4); and an organic light-emitting diode D1 on the active matrix substrate 101A (see, for example, 4 picture). The active matrix substrate 101A includes, for example, a scanning line L·, a data line Ld, a capacitance line ® Lc, a driving line Lp, wirings L1 and L2, a switching transistor Q1, a driving transistor Q2, and a capacitor C1. The organic light-emitting diode D1 includes an organic film 62 interposed between the anode electrode 61 and the cathode electrode 63, and is connected to the source electrode 24s of the driving transistor Q2 via, for example, the wiring L2. Further, the color filter may be disposed on the lead-out side of the light with respect to the organic light-emitting diode D1. In Fig. 4, the direction of light emission (direction of light emission) is indicated by a reverse white arrow. The scanning line Lg is composed of, for example, the first wiring layer 41 on the transparent substrate 10 (see, for example, Fig. 3). The data line Ld, the capacitance line Lc, and the driving line Lp are respectively made of, for example, the first wiring layer 41 on the transparent substrate 10, the second wiring layer 43 on the interlayer insulating film 40, and the contact formed in the contact of the interlayer insulating film 40. The in-part wiring 42 and the three-dimensional wiring RC formed by the in-contact wiring 42 and the second wiring layer 43 for connecting the first wiring layer 41 between the adjacent cells 101a. Each of the wirings L1 and L2 is composed of, for example, the first wiring layer 41 on the transparent substrate 10, the second wiring layer 43 on the interlayer insulating film 40, and the contact inner wiring 42 formed in the contact hole of the interlayer insulating film 40. . Furthermore, the wiring L2 also includes, for example, a contact plug 51, which is used to electrically connect the wiring layer 41 connected to the source electrode 24S of the driving transistor Q2 to the organic light emitting diode. The anode electrode 61 of the polar body D1. Further, each of the nodes Nb, N4, N5 and N6 shown in Fig. 2 can be defined at each position shown in Fig. 3, for example.

In the first wiring layer 41, the portions extending in the substantially column direction or the substantially row direction correspond to the recording line portions of the scanning line Lg, the data line 匕, the capacitance line, or the driving line Lp, respectively. Further, it corresponds to a sub-wiring portion in which the belly wiring is divided and the main wiring and the elements (9), Q2, and the like in the respective elements 1G1 are connected.

The contact inner wiring 42 and the second wiring layer 43 are wiring for guiding, for example, the data line Ld, the capacitance line Lc or the driving line Lp to the interlayer insulating film 4, or the wiring and the wiring (1^ The scanning line LG extending in the substantially vertical direction is a three-dimensional wiring RC for electrically connecting the main wirings of the respective wirings (1, Lc, Lp, etc.). In the present embodiment, the portions of the contact inner wiring 42 and the second wiring layer 43 that lead the respective wirings (1, , , , , , , , , , , , , , , , , , , In part, the portion for crossing the scanning line Lg is included in the main wiring. In this manner, the first wiring layer 41 under the interlayer insulating film 40 and the second wiring layer 43 on the interlayer insulating film 40 are electrically connected by the contact inner wiring 42 formed in the interlayer insulating film 4 (see, for example, FIG. 4). By connecting, each of the 4 Lun lines (Lg, Ld, Lc, Lp, etc.) can be three-dimensionally intersected. Thereby, a plurality of regions of each of the wirings (Lg, Ld, Lc, Lp, etc.) can be formed in a single layer (in the present embodiment, a layer on the transparent substrate 10). Therefore, the active matrix substrate 1〇1Α can be realized. The simplification of the layer structure or the clarification of the wiring layout, etc., and the flatness of the upper surface of the film formed on the upper layer can be improved by 18 321390 201013606. Further, on the transparent substrate 10, for example, in the region where various wirings (Lg, 'Ld, Lc, Lp, LI, L2, etc.) and various elements (Q1, Q2, Cl, etc.) are not formed, for example, the first portion is formed. The redundant wiring 41a (see, for example, FIG. 3), which is partially redundant in the wiring layer 41, improves the flatness of the upper surface of the layer formed on the transparent substrate 10. The switching transistor Q1 is a thin film transistor (TF7) of a so-called bottom gate structure, for example, a gate electrode 11 on the transparent substrate 10, a gate insulating film 12 covering the gate electrode 11, The source electrode 14s on the gate insulating film 12 and the drain electrode 14d and the transparent semiconductor layer 13 on the gate insulating film 12 between the source electrode 14s and the drain electrode 14d are formed (see, for example, Fig. 4). For the gate electrode 11, for example, a part of the first wiring layer 41 constituting the scanning line Lg can be used. As the gate insulating film 12, for example, a part of the interlayer insulating film 40 can be used. The transparent semiconductor layer 13 can use, for example, a portion of the transparent semiconductor layer ❿ 44. For the source electrode 14s, for example, one of the second wiring layers 43 constituting a part of the data line Ld can be used. For the gate electrode 14d, for example, a part of the second wiring layer 43 constituting a part of the wiring L1 can be used. However, the present invention is not limited thereto, and for example, a portion of the second wiring layer 43 may be used for the gate electrode 11, and a so-called top portion of the first wiring layer 41 may be used for each of the source electrode 14s and the drain electrode 14d. Thin film transistor (TFT) of the gate structure. Similarly, the driving transistor Q2 is a dance film transistor (TFT) of a so-called bottom gate structure, which is composed of, for example, a gate 19 321390 201013606 on the transparent substrate 10, an electrode 21, and a gate covering the gate electrode 21. The pole insulating film 22, the source electrode 24s on the gate insulating film 22, the drain electrode 24d, and the transparent semiconductor layer 23 on the gate insulating film 22 between the source electrode 24s and the wide-boil electrode 24d (refer to For example, Figure 4). For the gate electrode 21, for example, a part of the first wiring layer 41 constituting the wiring L1 can be used. As the gate insulating film 22, for example, a part of the interlayer insulating film 40 can be used. The transparent semiconductor layer 23 can use, for example, a portion of the transparent semiconductor layer 44. For the gate electrode 24d, for example, one of the second wiring layers 43 constituting a part of the drive line Lp can be used. The source electrode 14s can be used, for example, as a part of the second wiring layer 43 constituting a part of the wiring L2. However, the present invention is not limited thereto, and for example, a portion of the second wiring layer 43 may be used for the gate electrode 21, and a so-called top portion of the first wiring layer 41 may be used for each of the drain electrode 24d and the source electrode 14s. Thin film transistor (TFT) of the gate structure. Further, the active matrix substrate 101A of the present embodiment has a so-called array substrate as a TFT of a transistor element. The capacitor C1 is composed of, for example, the lower electrode 31 on the transparent substrate 10, the upper electrode 33 on the lower electrode 31, and the capacitor insulating film 32 between the lower electrode 31 and the upper electrode 33 (see, for example, Fig. 4). For the lower electrode 31, for example, a part of the first wiring layer 41 constituting one of the capacitance lines L· can be used. As the capacitor insulating film 32, for example, a part of the interlayer insulating film 40 can be used. For the upper electrode 33, for example, one of the second wiring layers 43 constituting the drive line Lp can be used. Furthermore, the organic light-emitting diode D1 on the active matrix substrate 101A 20 321390 201013606 can be made, for example, from the anode electric handle ^^ bl, the organic film 62 on the anode electrode 61, and the cathode on the organic film bZ. It is configured (see, for example, Fig. 4). Further, 'a -10, E, and the layer on the side where the organic light-emitting diode D1 is led out from the light' is disposed in a color conversion film such as a color filter or a wavelength converter. Between the adjacent Chadong ^ . ^ C1 Sis 101a, it is useful to divide the anode electrodes 61 and 1 in each pixel. The partition wall 7 of the machine film 62 is referred to (see, for example, Fig. 4). Interlayer insulation 祺50 t- β n

— A passivation film 8G for protecting each element of the organic light-emitting diode D1 and the lower layer and each wiring is formed on the crucible (see, for example, Fig. 4). ^ A glass substrate can be used for the transparent substrate 10 here. However, it is not limited thereto, and various transparent and sturdy substrates such as a glass substrate, a quartz substrate, or a plastic substrate may be used. Further, by using the flexible substrate as the moon-permeable substrate 10, a flexible organic EL display device 1 can be realized. In the present invention, transparent means that the light of at least the wavelength included in the frequency band of visible light is transparent or translucent. The first wiring layer 41, the contact inner wiring 42 and the second wiring layer 43, the contact and the contact plug 51 are formed of a conductive material mainly composed of zinc tin oxide (ZTO). However, the present invention is not limited thereto, and for example, an indium oxide (Indiura Tin 〇xide WT 〇, indiuin zinc oxide, ΙΖ0, etc.) or other inorganic oxide conductor material, or an organic material or the like can be used to obtain transparent conductivity. The conductive material of the film is formed. Further, the ζτο material can be used as a conductor by, for example, making the amount of (mole) more than ζη (10) such as a molar ratio of 1:2, etc.). In addition, the IT_In:Snq ear set is often 〇9: 〇.1 or so, as the conductor material 120 of 111: the molar ratio is usually 321390 21 201013606 is 0. 9 : 0. 1 or so . In particular, since the ZTO conductive film can be formed as an amorphous film, it has the advantage that the flexible first wiring layer 41, the second wiring layer 43, and the contact wiring 42 and the contact plug 51 can be realized. Further, since the amorphous 导电0 conductive film can be formed at a low temperature, it is also advantageous in that a substrate having low temperature resistance such as a plastic substrate can be easily formed as the transparent substrate 10 even if it is used. Thus, the method of forming the first wiring layer 41, the second wiring layer 43, the contact inner wiring 42 and the contact plug 51 by using the 导电0 conductive film can be applied to the flexible organic EL display device 100. . For the interlayer insulating films 40 and 50, for example, a lanthanum-based insulator such as SOG (Spin ON Glass), cerium oxide (Si〇2) or tantalum nitride (SiNx), or an aluminum oxide such as alumina (Al 2 〇 3) can be used. Or a ruthenium oxide such as ruthenium oxide (Hf〇2) or ruthenium oxide such as ruthenium oxide (Y2〇3) or a ruthenium oxide such as La2〇3, or a transparent photosensitive resin or the like can be formed by a coating process. A transparent insulating single layer film composed of an insulator or a transparent insulating multilayer film including one or more of the insulating single layer films. In the present embodiment, the interlayer insulating film 40 is formed of a film having a multilayer structure including, for example, an oxidized aluminum (Al 2 〇 3) film and a hafnium oxide (Hf 〇 2) film, and is composed of, for example, a photosensitive resin. The interlayer insulating film 50 is formed by an insulating film of a single layer structure. In the present embodiment, the interlayer insulating films 40 and 50 can function as a planarizing film for ensuring the flatness of each layer, in addition to functioning as an insulating film for insulating the respective layers. The transparent semiconductor layer 44 is formed on the interlayer insulating film 40 so as to cover the second wiring layer 43 and the interconnect wiring 42. The transparent semiconductor layer 22 321390 201013606 * ❹ 44 is used as a process for reducing the process of the second wiring layer 43 located in the lower layer and the wiring 42 in the contact, for example, in the manufacturing step to be described later. The function of the protective film. In the present embodiment, as an example of the transparent semiconductor layer 44, a semiconductor material having a lower carrier concentration than the conductive material (the ITO conductive material or the indium-containing oxide conductive material) is used. The semiconductor consists of ΖΤ0 or an indium oxide:: a f-transparent semiconductor layer. Furthermore, the coffee material two sn (10) zn:sn has a molar ratio of 2:1, etc., and can be used as a conductor. Further, when the filming of the semiconductor layer is performed, the oxygen concentration of the ambient gas or the like can be increased, and the concentration of the carrier can be adjusted. Furthermore, the above-mentioned second reduced semiconductor layer of the semiconductor layer can be applied to form a flexible organic EL display material, or can be used to form a thickened semiconductor or Various transparent semiconductor materials such as tetrabenzoporphyrin precursors are formed. In the present embodiment, the main component of the conductor material forming the transparent semiconductor layer 44 and the main component of the conductor material forming the percussion portion in each element make the electrocardiogram: The electrode electrode 14s, the drain electrode 14d, and the source line layer 43 are formed of a 导电0 conductive film which is formed into a knives. The transparent semiconductor layer 44 is mainly composed of 321390 23 201013606 ΖΤ0 and has a carrier concentration ratio second wiring. The yttrium semiconductor film of the layer 43 having a low carrier concentration is formed. Thus, since both of the same kind of material are formed, for example, the source electrode 14s or the drain electrode 14d of the switching transistor Q1 can be in ohmic contact with the transparent semiconductor layer 13. Similarly, the source electrode 24s or the drain electrode 24d of the driving transistor Q2 can be brought into contact with the transparent semiconductor layer 23. As a result, the resistance components of the TFT elements (Q1, Q2, etc.) are reduced, so that the driving power of each TFT element can be reduced, and as a result, the power consumption of the organic EL display device 100 can be reduced. The partition wall 70 can be formed of an insulating film of a single layer structure ® made of, for example, a photosensitive resin. However, it is not limited thereto, and for example, S0G,

矽-based insulator such as Si〇2 or SiNx, aluminum oxide such as Ah〇3, yttrium oxide such as Hf〇2 or yttrium oxide such as Y2〇3 or lanthanum oxide such as La2〇3, or transparent photosensitive A transparent insulating single-layer film made of an insulating material which can be formed by a coating process such as a resin or a transparent insulating multilayer film containing one or more of these insulating single-layer films. Further, since the switching transistor Q1, the driving transistor Q2, and the capacitor C1 are formed using one of the first wiring layer 41, the second wiring layer 43, and the interlayer insulating film 40, the material can be used in the same manner as described above. By. However, a transparent conductive film or the like for lowering the resistance may be formed on each of the electrodes and appropriately deformed. Further, in the organic light-emitting diode D1, the organic film 62 includes a multilayer structure including a hole injection layer, a hole transport layer, an organic light-emitting layer, an electron transport layer, an electron injection layer, and a hole barrier layer. membrane. In the organic film 62, the main material of the organic light-emitting layer may be a polydene and a derivative thereof, and a total of 24 321 390 201013606 polymer, a poly-arylene group and derivatives and copolymers thereof, a poly-arylene hydrocarbon-extended ethylene and Combinations of derivatives and copolymers, polymer materials such as polyarylamines and their derivatives and copolymers, and other molecular luminescent materials or polymer materials of other fluorescent materials, etc. Various luminescent materials are used for the target wavelength. The anode electrode 61 of the first one can be used by an oxide such as ΖΤ0 or ΙΤ0, or a metal material such as silver (Ag) or aluminum (A1). When the multilayer structure including the transparent single-layer film penetrates into a core material for light penetration, the layer containing the layer is used as a ruthenium film of ffl 7ΤΠ/Ασ/7ΤΠ. In the present embodiment, a series of films in which ZT0/Ag/ZT0 is used to form a film from (3) and a film for light penetration is formed as an example. Further, the cathode electrode 63 is obtained by using, for example, silver (Ag), a metal such as a metal, or an alloy (%), which has high conductivity and reflectance, and is obtained by using % and Ag materials. In the present embodiment, the case of the 系/alloy film is taken as an example. It is formed by a multilayer film such as a SiO 2 film and a siNX film which are formed by, for example, a CVD method. +丄 ^ ^ ςι·Μ Ά In the present embodiment, a case where the Si〇2 film and the S1NX film are used in the series is taken as an example. According to the above description, the organic EL display device 100 of the present embodiment is formed such that the opposite 膘62 is located on the wrist side of the lower surface of the light-extracting side, and is formed by a smear or semi-transparent film. A so-called full-open type organic EL display device that is a full-area opening of the garment-like surface 100a under the light-extracting surface is realized. Month (Manufacturing Method) 25 321390 201013606 Next, a method of manufacturing the organic EL display device 100 of the present embodiment will be described in detail with reference to the drawings. Figs. 5-1 to 5-10 are process cross-sectional views showing a method of manufacturing the display panel ι 01 of the organic EL display device of the present invention. In Figs. 5-1 to 5-10, the continuous end faces cut by A-A' shown in Fig. 3 are shown. In the present manufacturing method, first, a transparent substrate 1 is prepared, and ZTO is deposited and deposited by, for example, a sputtering method, a CVD (Chemical Vapor Deposition) method, a vacuum vapor deposition method, or the like. A transparent amorphous ζτ〇 conductive film is formed on one of the two main faces of the surface in the thickness direction of the substrate (the direction perpendicular to the substrate) on one of the two main faces (hereinafter referred to as the upper surface). Next, the ζτ〇 conductive film is patterned by, for example, photolithography (in the present specification, the "photolithography method" includes a patterning step such as an etching step), whereby As shown in FIG. 1, the gate electrodes 11 and 21, the lower electrode 31, the first wiring layer 41, and the redundant wiring 41a (see FIG. 3) are formed on the transparent substrate 10 (first wiring forming step). However, the present invention is not limited thereto, and the gate electrodes u and 21, the lower electrode 31, and the first wiring layer 41 may be formed by a coating process or the like using a printing technique such as a gel/sol method or an inkjet printing technique. Long wiring 41a, etc. Then, an oxide junction (Ah〇3) film and hafnium oxide (Hf〇2) are sequentially deposited by a sputtering method, a CVD method, a vacuum deposition method, or the like, and each electrode and wiring (11, 21, 31, On the upper surface of the transparent substrate 10 of 41, 41a, etc., an interlayer insulating film 4A made of a transparent insulating laminated film is formed (the first interlayer insulating film forming step). Next, the interlayer insulating film 40 is patterned by, for example, photolithography. As shown in FIG. 5-2, the contact holes apl and ap2 are exposed between the interlayers 321390 26 201013606, the insulating film 4G (4) the first layer _41. . However, the present invention is not limited thereto, and the interlayer insulating film 4B having the contact holes aP1 & ap2 may be formed by, for example, the above-described coating process technique. Further, in the interlayer insulating film 4 formed in this step, at least the interlayer insulating film 4 on the closed electrode 11 functions as the insulating film 12 between the switching transistors qi, at least on the gate electrode 21. The interlayer insulating film 40 functions as a gate insulating film of the driving transistor Q2, and at least the interlayer insulating film on the P electrode 31 functions as the capacitor insulating film 32 of the capacitor [I. Further, the contact hole aP2 is a contact hole for forming a portion of the contact plug which is electrically connected to the first wiring layer 41 in the subsequent step. Then, ζτ〇 is deposited on the interlayer insulating film on which the contact holes apl and ap2 are formed by, for example, a sputtering method, a CVD method, a vacuum deposition method, or the like, thereby forming a transparent amorphous ZT0 conductive film. At this time, a ζτ〇 conductive film may be formed in the contact hole 叩2. Next, the ruthenium conductive film is patterned by, for example, photolithography, and as shown in FIGS. 5-3, the source electrode 14s, the drain electrode Ud, and the source electrode 24s are formed on the interlayer insulating film 40. In the contact hole apl of the interlayer insulating film 40, the contact inner wiring 42 electrically connected to the i-th wiring layer 41 is formed in the contact hole apl of the interlayer insulating film 40 (the second wiring) Forming step). However, the present invention is not limited thereto, and the source electrode 14s and the drain electrode 14d, the source electrode 24s, the drain electrode 24d, the upper electrode 33, the contact inner wiring 42 and the first portion may be formed by, for example, the above-described coating process technique. 2 wiring layer 43. In addition, in this step, the ζτ〇 conductive 321390 27 201013606 film in the contact hole ap2 may not be completely removed. Then, the ruthenium is deposited on the interlayer insulating film 40 on which the electrodes and the wirings (14s, 14d, 24d, 24s, 33, 42, 43 and the like) are formed by, for example, a sputtering method, a CVD method, or a vacuum deposition method. Thereby, a 膜τ semiconductor film having a carrier concentration lower than that of the ZTO conductive film is formed (semiconductor layer forming step). At this time, a ζτ〇 semiconductor film may be formed in the contact hole ap2. Further, by controlling the molar ratio of Ζn to Sn as described above, the ΖΤ0 semiconductor film can be made to have a transparent semiconductor film having a carrier concentration lower than that of the conductive layer constituting the first wiring layer 41 or the second wiring layer 43. . Next, the ζτο semiconductor film is patterned by, for example, photomicro-shading, and as shown in FIG. 5-4, the interlayer insulating film 40 is formed to cover the electrodes and wiring (14s, 14d, 24d'24s, 33). , 42, 43, etc.) of the transparent semiconductor layer 44. At this time, it is preferable to overetch to the extent that the semiconductor film in the contact hole ap2 is completely removed. Further, among the transparent semiconductor layers 44 formed, at least the transparent semiconductor layer between the source electrode (4) and the drain electrode 14d functions as the transparent semiconductor layer 13 of the channel forming layer of the switching transistor Q1, at least the gate electrode The transparent semiconductor layer 44 between the 24d and the source electrode 24s functions as a transparent semiconductor layer 23 that drives the channel formation layer of the transistor Q2. In the present embodiment, since the transparent semiconductor layer 44, the second wiring layer 43, and the contact inner wiring 42 are formed using the same material, it is difficult to obtain appropriate selection of the transparent semiconductor layer 44, the second wiring layer 43, and the like. ratio. (4) In the present embodiment, the patterned second transparent layer 321390 28 201013606 4 44 is formed so as to cover the wiring 42 in the contact layer so as to cover the second wiring layer, and the second wiring layer 43 and the contact inner wiring 42 are formed. Since it is not exposed to the etching environment during etching, the transparent semiconductor layer 44 can be patterned without considering the selection ratio of the second wiring layer 43 or the like. However, it is not limited thereto, and the transparent semiconductor layer 44 may be formed by, for example, the above-described coating process technique. At this time, since the formed transparent semiconductor layer is not patterned by etching or the like, the transparent semiconductor layer 44 does not necessarily have to cover the second wiring layer 43 and the contact inner wiring 42. When the transparent semiconductor layer (13, 23, 44, etc.) is formed as described above, then, for example, a photosensitive resist liquid is spin-coated on the interlayer insulating film 4 of the transparent semiconductor layer (13, 23, 44, etc.), and By exposing and developing the resist liquid, as shown in FIGS. 5 to 5, a contact hole ap3 having a contact hole ap2 continuous with the interlayer insulating film 4 is formed, and two layers of insulating resin are formed of a transparent photosensitive resin. Film 50 (second interlayer insulating film forming step). However, it is not limited thereto, and the interlayer insulating film 5 具 having the contact hole ap3 may be formed by, for example, the above-described coating process technique. © Next, the ζτ〇 is deposited on the interlayer insulating film 5 of the contact hole ap3 by, for example, a sputtering method, a CVD method, or a vacuum vapor deposition method, thereby forming at least an interlayer insulating film as shown in FIG. 5-6. A transparent amorphous contact plug 5 electrically connected to the first wiring layer 41 is formed in the contact hole ap3 of the contact hole ap3 of 50 and the contact hole ap2 of the interlayer insulating film 4, and the interlayer insulating film 5 formed at this time is further formed. The unnecessary zTQ conductive film of 0 is removed by a technique such as (4), and the like, and is not limited thereto, and may be formed in the interlayer insulating films 4G and 5 () by, for example, the above-described coating process technique. The plug 5 is subjected to the above-described steps. In the present embodiment, the so-called 29 321390 201013606 is used as the active matrix substrate 1A1A of the array substrate. Then, ZT0, Ag, and ΖΤ0 are sequentially deposited on the active matrix substrate 1〇1 by using, for example, a bribe method, a (four) method, or a vacuum steaming method, thereby forming an eight-part "contact plug 51 electrically connected contact point. Transparent ZT()/Ag/zT〇, layer film...,: After 'Zero 影/Ag/ZT 〇 层 film is patterned by light lithography, as shown in Figure 5-7, in interlayer insulation The anode electrode 6 electrically connected to the contact plug 51 is formed on the film stack. However, the present invention is not limited thereto, and the shaft anode electrode 61 coated as described above may be used.

Next, on the active substrate substrate on which the anode electrode 61 is formed, spin coating, for example, a sense resistor, and exposing and developing the ship, thereby as shown in FIG. 5-8, on the active matrix substrate 1〇1 A partition wall 70 made of a transparent photosensitive resin is formed in a region where each person divides each of the deniers. However, the partition wall 70 may be formed by, for example, the above-described coating process technique or the like.

Next, a hole injection layer, a hole transport layer, an organic light-emitting layer, an electron transport layer, an electron injection layer, and a hole barrier layer are formed on at least the anode electrode e-sequence layer by, for example, an existing tantalum-forming technique, such as the fifth The organic film 62 is formed on the anode electrode 61 partitioned by the partition wall 70, and in the organic film 62, for example, a hole injection layer, a hole transport layer, a feed layer, and an electron injection layer. The hole barrier layer can be formed by a coating process such as a printing technique of a high-concentration polymer solution or an inkjet printing technique. However, it is not limited thereto, and a laser thermal transfer method (LITI method) represented by, for example, a shadow mask vapor deposition method or a transfer method represented by a vacuum evaporation method, or a laser can be used. The vapor deposition method (RIST method, Lips method 321390 30 201013606 *, etc. sequentially forms a hole injection layer, a hole transport layer, an organic light-emitting layer, an electron transport layer, an electron injection layer, and a hole barrier layer to form a film, Further, an organic film 62 corresponding to the element 101a is formed. Further, an inorganic oxide conductive film such as ιτο/ PED0TC3, 4-extended ethyldioxythiophene: Pss (polystyrenesulfonate), and conductivity are used for the anode electrode 61. In the case of the laminated film of the polymer film, the organic film 62 can be a laminated film of, for example, a hole injection layer/organic light-emitting layer/electron injection layer from the lower layer. Next, the alloy material of % and ^ is deposited on the entire active matrix substrate 101A on which the organic film 62 and the partition walls 7 are formed by, for example, a vacuum shovel method to form a conductive alloy film. At this time, the shadow mask method prevents the excess alloy film from being vapor-deposited outside the desired region, and the cathode electrode 63 is integrally formed in the arrangement region of at least the pixel (lGla) as shown in Figs. However, the present invention is not limited thereto, and the cathode electrode 63 may be formed by, for example, the above-described coating process technique. Then, a multilayer film of Si〇2 and siNx is formed on the anode electrode 61 partitioned by the tantalum partition wall 70 and the organic light-emitting diode M formed of the organic film 62 and the cathode electrode 63 by CVD, a method, or the like. The entire upper surface of the active matrix substrate 101A is formed with a passivation film 8 用以 for protecting the respective elements (qi, Q2, (Π, D1, etc.) and wirings (Lg, Ld, Lp, L1, L2, etc.) of the lower layer. A substrate is attached to the opposite side of the substrate 1 to 1A to be sealed, or a film is formed by a sputtering method, a Cvd method, or the like to perform sealing. After the above steps, the device shown in FIG. 4 is manufactured. The display panel 1〇1 of the layer structure includes the pixel 101a. In this case, the substrate on the side opposite to the substrate 1〇u is a transparent polymer film represented by ruthenium or PET, and is 31 321390 201013606. Or the GVD material is used to increase the sealing film of the thin translucent shirt and the inorganic film, etc. 9 Money then 'by the display panel 1〇1 manufactured as above, the signal control unit 102 and the scanning drive unit 1〇3 are mounted. , data drive unit 1〇2 capacitor line drive unit 1G5, drive In the organic EL display device 1 of the present embodiment, the organic light-emitting device 1 of the present embodiment is manufactured. In the above manufacturing steps, the steps of cleaning the substrate are appropriately included, but for the sake of explanation. The above steps are omitted, and as described above, the organic germanium display device of the present embodiment is provided with a film for light penetration with respect to the organic film 62 on the side of the lower surface of the light-extracting side. Since it is formed, it is possible to realize a so-called full-open back-light-emitting organic EL display device 1 of all the light-extracting surfaces. In addition, as described above, all the openings of the light-extracting surface are formed, and the light-emitting element can be realized. In the configuration, the arrangement of the organic light-emitting diode D1) is freely designed. Therefore, an organic EL display device having a large degree of freedom in design can be realized. Further, in the manufacturing method of the present embodiment, since Since the transparent semiconductor layer 44 covers the contact inner wiring 42 and the second wiring layer 43, the wiring (42, 43, and the like) of the etching step and the like described later can be reduced. In the above embodiment, each layer of the organic EL display device 1 can be formed of a flexible material. Further, in the embodiment of the present invention, a light-emitting layer is collectively used (in the present embodiment) The organic film 62) is an organic EL display device formed of an organic material. However, the present invention is not limited thereto, and may be, for example, 321390 32 201013606. For example, the luminescent layer is an inorganic material formed of an inorganic material. £. * (Embodiment 2)

Next, an organic EL display device will be taken as an example to explain the display device according to the second embodiment of the present invention. In the present embodiment, the upper surface of the panel 1 〇1 of the light-emitting element (4), such as the organic light-emitting diode (6) of the 6th (for example, the upper surface 2_ and the lower surface in FIG. 6) The surface of the surface (for example, the lower surface 100a in FIG. 6) is rotated to the external organic display device. That is, the organic rainbow display device of the present embodiment has both the upper emission type (top emission type) and the back surface. A two-sided light-emitting type organic EL display device (10) of the two types of light-emitting type. In the figure f6, the light-emitting direction (light-extracting direction) is indicated by a reverse white arrow. Further, in the following description, the first embodiment of the present invention The same components are denoted by the same reference numerals, and the detailed description thereof will be omitted. The functional configuration of the organic EL display device of the present embodiment and the organic EL display device 100 shown in the drawings are the same. The schematic functional blocks are the same. However, in the present embodiment, the pixels 101a of the second figure are replaced by pixels 2〇ia, and the schematic circuit configuration of the pixel 201a and the pixel shown in Fig. 2 are shown. Summary circuit composition of 101a However, in the present embodiment, the organic light-emitting diode D1 of the second embodiment is replaced by the organic light-emitting diode D2. (Formula structure) Next, the layout structure and layer of each element 201a will be described in detail. The layout structure 33 321390 201013606 of the active matrix substrate 1 α α 画 201 201 201 201 201 201 201 201 201 201 201 201 201 201 101 101 101 101 101 101 101 101 101 101 101 101 101 101 101 101 101 101 101 101 101 101 101 101 101 101 101 101 The schematic layer structure is shown in Fig. 6. Moreover, Fig. 6 shows that the pixel 2〇1& is displayed as a continuous cut at the same position as AA of Fig. 3, similarly to Fig. 4. The cross-sectional view of the end face is the same as that of the organic ELil display device of the organic EL display embodiment of the present embodiment. The cathode electrode 65 formed of a transparent electrode material is substituted for the cathode. The electrode 63 (see, for example, Fig. 4), and the auxiliary electrode 66 for reducing the resistance value of the cathode of the organic light-emitting diode D2 at the cathode electrode. The cathode electrode 65 can be used for visible light as well as the anode electrode 61, for example. Penetrating electrode material The electrode material can be formed by using an oxide conductor material such as ΖΤ0 or ΙΤ0, or a porous layer film made of a metal material such as silver (10) or shovel (1), or a transparent structure of a transparent monolayer film of a money-containing material. Laminated film. Further, when a metal material is used, the layer including the above film is a thin semi-transmissive film to the extent that light is transmitted. In the present embodiment, a case in which a film formed of a film of a film having a degree of light penetration of Mg/Ag < alloy film is used is taken as an example. Thus, in addition to the bottom emission type structure according to the first embodiment of the present invention, by forming the cathode electrode 65 with a transparent electrode, the lower surface l〇〇a and the upper surface 200a of the display panel m can be realized. The so-called two-sided luminescent organic EL display device that emits light from both sides. Further, the auxiliary electrode on the cathode electrode 65 is formed, for example, in the region of each pixel 201a of the active matrix substrate 101A (e.g., above the spacer 34 321390 201013606 70). The auxiliary electrode material machine oxide conductor material, or ', for example, a single layer film such as ZT0, IT〇, or a metal such as S3 film' (10), however, as in the present embodiment, the second layer Constructed an intentional laminate film. In each of the regions, the auxiliary electrode 66 is disposed in each of the pixels I to form ' or may be formed by, for example, A1: 极村〇. In the present embodiment, a series of thin electrodes 66 are formed by using a conductive material and a single layer film to form a drain electrode 66. The cathode of the conductive light-emitting diode D2 is configured to reduce the driving of the electrode body D2. The voltage 'results can be reduced: power consumption. In addition, since the material of the auxiliary electric material is: a one-pole material, it is possible to realize an organic display of the so-called two-sided full-open type of the opening of the upper surface a (four) opening, and the manufacturing method) The manufacturing method of the organic EL display device of the embodiment is the same as the manufacturing method of the organic EL_device according to the embodiment of the present invention. The manufacturing method of the cathode electrode 63 shown in the fifth embodiment is transparent. The step of forming the cathode electrode 65 and the step of forming the auxiliary electrode 66 on the cathode electrode 65 are added. Further, the other manufacturing steps are the same as those described in the first embodiment of the present invention in the first to fifth and fourth drawings, and therefore detailed description thereof will be omitted. In the step of forming the cathode electrode 65, an alloy thin film of 1 Mg and Ag is deposited on the active matrix substrate 101A using the fifth to fourth sheets to form a cathode electrode by using, for example, a vacuum deposition method. . At this 35 321 390 201013606, the cathode electrode 65 is formed in the desired overall region by the shadow mask method. < Further, in the step of forming the auxiliary electrode 66, after the step of forming the cathode electrode 65 as described above, ΖΤ0 or ΙΤ0 is performed by a sputtering method using a shadow mask method, a CVD method, a vacuum evaporation method, or the like. The oxide conductive material or a low-resistivity metal such as Ag, Al, Cu or the like is deposited on at least the cathode electrode 65, whereby the auxiliary electrode 66 is formed in a region above the partition wall 70 on the upper surface of the cathode electrode 65, for example. Then, in the same manner as in the first embodiment of the present invention, after the passivation film 138 is formed, the display panel 101 manufactured as described above is mounted on the signal control unit 102, the scan driving unit 103, the data driving unit 104, and the capacitor. The organic EL display device of the present embodiment is manufactured by the wire drive unit 105, the drive signal generating unit 106, and the casing of another component. Further, in the above manufacturing steps, the steps of cleaning the substrate and the like are appropriately included, but for the sake of simplification of the description, the steps are omitted. As described above, in the organic EL display device of the present embodiment, all of the layers on the light-derived side upper surface 200a side and the lower surface 100a side of the organic film 62 are formed by a film for light penetration, and thus can be formed. A so-called full-open two-sided light-emitting organic EL display device having all the openings of the solid light-derived surface. Further, since all the openings of the light-extracting surface are formed as described above, the arrangement of the light-emitting elements (the organic light-emitting diode D2 in the present embodiment) can be freely designed. Therefore, an organic EL display device having a large degree of freedom in design can be realized. Further, since the organic EL display device of the present embodiment includes the auxiliary electrode 66 for reducing the resistance value of the cathode electrode 65, the driving voltage of the organic light-emitting diode 36 can be reduced, and as a result, the organic EL display can be reduced. Device consumption, electricity. Further, the organic EL display device of the present embodiment can be used as, for example, a display that is attached to a transparent surface such as a window of a vehicle, a glass window, or a glass water tank, and can be used for various purposes. In the manufacturing method of the present embodiment, in the same manner as in the first embodiment of the present invention, the contact inner wiring 42 and the second wiring layer 43 are covered with the transparent semiconductor layer 44 during the manufacturing process, so that the etching described later can be reduced. The process of the wiring (42, 43, etc.) of the steps and the like is damaged. Further, in the above-described embodiment, the layers constituting the organic EL display device 100 may be formed using a flexible material in the same manner as in the first embodiment of the present invention. In the first embodiment, the inorganic EL display device formed of an inorganic material can be used as the light-emitting layer, for example, in the same manner as in the first embodiment of the present invention. In the present embodiment, by providing, for example, a reflection film (reflector) on one of the upper and lower sides of the light-extracting side belonging to one side,

有机 A top-illuminated or back-illuminated organic EL display device with improved brightness or the like is realized. (Embodiment 3) Next, a display device according to Embodiment 3 of the present invention will be described by taking a liquid crystal display device 3 as an example. Fig. 7 is a block diagram showing a schematic configuration of a liquid crystal display device 3. In the present embodiment, the series is referred to as a light source called a backlight (see, for example, the light source 35A in the first drawing) and a liquid crystal element (see, for example, the liquid crystal element E31 in Fig. 10). The liquid 37 321390 201013606 = ', and the device 300 is not provided with the element substrate (see, for example, the active matrix substrate 3〇1A in Fig. 10). In the present embodiment, the same components as those in the present invention 1 - 4 & 2 are denoted by the same reference numerals, and the detailed description thereof will be omitted. * (Overall configuration) As shown in Fig. 7, the liquid crystal display device 3 includes a display panel 301 including a pixel (PX) 301a arranged in a matrix of two, and is connected to the display TfC surface. The scanning drive unit 103, the data driving unit 104, the capacitance line drive 卩105, and the signal control unit ι2 for controlling each unit. Further, the display unit and the panel 3〇1 are provided with three primary color book elements 30la of red (R), green (G) and blue (Β). The configuration of the signal control unit 102, the scan drive unit 1〇3, and the data drive unit_line drive unit 105 is the same as that of the first embodiment of the present invention. Further, the scan control signal CONT1, the data control signal C0NT2, the electric control signal c〇NT3, and the video data signal DAT are also appropriately generated as the signals of the driving mode of the night-yang element. However, in the present embodiment, the line LP, the drive signal generating unit 106, and the light emission control signal are slightly driven. ^Electric office=, the display panel 301 is connected to the scanning line ", the data line Ld, LC. In the present embodiment, each scanning line ^, data line u, and: 'W' extend in a manner of crossing each other The wiring portion is set as the main crystal, and the wiring of the switching electric power 1 or the storage capacitor (3) (see, for example, FIG. 8) which is connected to the main wiring 301a is divided into two; The wiring portion is a sub-wiring. The configuration is the same as that of the present invention. Therefore, the detailed description of 38 321 390 201013606 is omitted here. (The composition of the elements is 3). =. The following description shows a schematic diagram of the schematic circuit configuration of any of R, G, and B, and the schematic circuit of the element 301a. The book aa, such as the eighth-to-normal 301a, includes the switching transistor Q31. , accumulation and liquid crystal element E31. The switch C31 Ο switch transistor Q31 is, for example, n-type m, and its source is connected to, for example, the node N34 from the main line of the data line u. • Point leg line L31. In addition, ^ Crystal coffee open G system is connected to, for example, node N33 In the middle of the sweep ^ = ^ wiring divergence wiring. Therefore, the switching transistor Q31 is based on the voltage level of the sweep # (sweep control voltage) to make the data line Ld and node N1 conduction or open. In the wiring L31 'via For example, in the wiring portion 分歧 which is branched in the node N31 (this portion is also included in the wiring L31), one terminal of the storage capacitor C31 is connected. The other terminal of the storage capacitor C31 is connected to, for example, the main wiring of the capacitor line Lc in the node N1. In the same manner as in the first embodiment of the present invention, a capacitance line drive signal is applied from the capacitance line drive unit 105 to the capacitance line Lc. The voltage level Vc (capacitor line drive voltage) of the capacitance line drive signal can be set, for example. The ground potential is, for example, connected to the GND (Vcom) terminal belonging to the common electrode in the same manner as the liquid crystal element Cpx (E31). In other words, the capacitance line Lc can be set as a ground line. In this case, the capacitance line driving unit 1〇5 can be omitted. Further, the other side of the liquid crystal element E31 is also connected to the wiring L31. The other is 39 321390 201013606 (for example, the book Φ _ _ square electrode common electrode in FIG. 10 (for example, 'the other one of the H7^31, the liquid The crystal element E31 functions as the electric two electrode 313). As shown in Fig. 7, the so-called liquid crystal capacitor Fig. 8 does not, and the common electrode 313 applies c; i: the two voltage V_. According to the connection relationship, the storage capacitor functions as a load capacitor of 2 = 2 in the switching transistor (10) in parallel with the device. In addition, the common current (4) (10) can be set to, for example, the ground potential GND. The voltage level vg of the scan signal from the input to the scan n*5 (sweep!: ^ EMI becomes high level on time) The switch transistor is turned on, and the charge is injected into the liquid crystal element by the __ crystal Q3i. Electrode 311 (see, for example, Fig. 1G). As a result, the voltage of the pixel electrical signal is such that the liquid crystal element becomes a storage capacitor (3) in the common electrode 313 (the change of the molecular arrangement of the ginseng gamma. ν_)' is in the (four) level of the scanning red (v) level; After the switching transistor Q1 is completely turned off, it is maintained to maintain the pixel electrode '(4) during the period until the lower voltage level is high and the transistor Q31: := is turned off. That is, the accumulation capacitor (3) is the data signal Sd from the financial period to the data line L>. In addition, in the present embodiment, for example, the polarity of the lean signal in which Ld is turned in and the potential input to the capacitance line ^j, ·, may be reversed in each predetermined period. Drive signal to drive mode. In the case of the reverse drive 321390 40 201013606, although the reverse drive mode or the line reverse drive mode is used, etc., any of the reverse drive modes can be used. • Next, the layout structure and layer structure of each element 3〇la will be described in detail using FIG. 9 and FIG. Fig. 9 is a schematic plan view showing the layout structure of the active matrix substrate 301A (see, for example, Fig. 1) of the halogen element 301a. Fig. 10 is a schematic cross-sectional view for explaining the layer structure of the halogen element 301a. In the ninth figure, for the sake of simplification of the description, the configuration of the transparent substrate 1 and the interlayer insulating films 40 and 50 and the counter substrate 302A is omitted (see, for example, Fig. 10). Fig. 10 is a view showing a schematic layer structure of a pixel 301a corresponding to the continuous end face of A-A of Fig. 9. As shown in FIG. 9 or FIG. 1 , the halogen matrix 3A includes an active matrix substrate 301A as an array substrate (see, for example, a first drawing); and the active matrix substrate 301A faces the opposite substrate 302A. (See, for example, FIG. 10); and a liquid crystal element E31 disposed between the active matrix substrate 301A and the counter substrate 3A2A (see, for example, a first drawing). The active matrix substrate 3 〇 系 includes, for example, a scanning line Lg, a data line Ld, a capacitance line Lc, a wiring L31, a switching transistor Q3, and an accumulation capacitor C31. The counter substrate 3A2A includes a light shielding film 321 as a black matrix for preventing unnecessary light leakage, and a color filter 61 for the wavelength of the appropriate frequency band to pass through the substrate 301a. The liquid crystal element E31 includes a pixel electrode that sandwiches the liquid crystal layer 312; 311 and the common electrode 313; and an alignment film 314 and 315 that further sandwiches the pixel electrode 311 and the common electrode 313, and is connected to the switching electrode via, for example, the wiring L31. The crystal Q31 and the storage capacitor C31 are disposed on the active matrix substrate 3〇1A. Further, the counter substrate 302A is disposed so as to sandwich the liquid crystal element E31 together with the active matrix substrate 3〇1A 321390 41 201013606. Further, the laminated structure formed by the active matrix substrate 301A, the liquid crystal element E31, and the counter substrate 302A is sandwiched by polarizing plates 330 and 340 which are only allowed to pass through light which is vibrated in a predetermined direction. In the same manner as in the first embodiment of the present invention, the scanning line L, the data line Ld, the capacitance line Lc, and the wiring line L3i are, for example, the first wiring layer 41, the contact inner wiring 42, the second wiring layer 43, and the contact plug 51, respectively. At least part of it is formed. The switching transistor Q31 is a gate electrode 15 belonging to a part of the first wiring layer 41 constituting the scanning line LG, a gate insulating film 16 which is a part of the interlayer insulating film 40, and a part constituting one of the data lines. The source electrode 18s of one of the wiring layers 43 and the drain electrode 18d which is a part of the second wiring layer 43 which constitutes a part of the wiring L31, and the transparent semiconductor layer 17 which is a part of the transparent semiconductor layer 44 are formed. In addition, the storage capacitor C31 is a lower electrode 35 belonging to a part of the first wiring layer 41 constituting the wiring L31, a capacitor insulating film 36 belonging to one portion of the interlayer insulating film 40, and a second wiring layer 43 constituting the capacitance line Lc. The upper electrode 37 of one of the q portions is formed. Further, each of the nodes N31, N33 to N35 shown in Fig. 8 can be defined at each position shown in Fig. 3, for example. In the same manner as the switching transistor Q1 of the first embodiment of the present invention, the switching transistor Q31 of the present embodiment is a TFT having a bottom gate structure. However, the present invention is not limited thereto, and may be, for example, a top gate structure. TFT. The active matrix substrate 301A of the present embodiment is similar to the active matrix substrate 101A of the first embodiment of the present invention and is referred to as a so-called array substrate. 42 321390 201013606 Furthermore, on the transparent substrate ι, various wirings (Lg,

In the region of Ld, Lc, L31, and the like, and the regions of the various elements (Q31, C31, and the like), as in the first embodiment of the present invention, for example, a redundant wiring in which one of the first interconnect layers 4 is partially redundant (see, for example, FIG. 9) is formed. Thereby, the flatness of the upper surface of the layer formed on the transparent substrate 10 is improved. Further, in the present embodiment, the transparent semiconductor layer 44 functions not only as a channel layer of each element (for example, the switching transistor Q31) but also as a wiring layer 42 for reducing the second wiring layer 43 or the contact portion located in the lower layer. It functions as a protective film that is damaged by the process. Further, the liquid crystal element E31 on the active matrix substrate 301A having the above configuration is composed of, for example, a halogen electrode 311, a liquid crystal layer 312 on the pixel electrode 311, a common electrode 313 on the liquid crystal layer 312, and a liquid crystal layer sandwiched from above and below. The alignment films 314 and 315 of 312 are formed (see, for example, the first drawing). Further, in the liquid crystal element E31, a substantially triangular dielectric protrusion 316 may be provided on the upper portion of the liquid crystal layer 312 (see, for example, a first drawing). Further, a color conversion film such as a black matrix, a color filter or a wavelength converter for preventing unnecessary light leakage from the light source 350 may be disposed on the side opposite to the light emitted from the liquid crystal element E31. In the present embodiment, a case where the light-shielding film 321 and the color filter 64 as the black matrix are disposed between the common electrode 313 and the opposite substrate 302A is exemplified. Further, polarizing plates 330 and 340 which sandwich the active matrix substrate 301A and the opposite substrate 302A are provided on the outer side of the active matrix substrate 301A and the opposite substrate 302A. Further, the light source 350 is disposed under, for example, the active matrix substrate 301A. Therefore, the light from the light source 350 passes through the polarizing plates 330, 43 321390 201013606, the active matrix substrate 301A, the liquid crystal element E31, the color filter 64, the opposite substrate 302A, and the polarizing plate 340, and is subordinate to the light-extracting surface of the display panel 301: The surface 300a is output to the outside. In Fig. 10, the light direction (light direction of light extraction) is indicated by a reverse white arrow. Here, the first wiring layer 41, the interlayer insulating film 40, the transparent semiconductor layer 44, and the second wiring layer 43 are formed using the same material as in the first embodiment of the present invention. Therefore, the switching transistor Q31 and the storage capacitor C31 can be formed using the same material as described above. Further, the transparent substrate, the contact inner wiring 42, the contact plug 51, and the interlayer insulating film 50 may be formed using the same material as that of the first embodiment. The color filter 64 can be formed by using various kinds of filter materials such as a photosensitive resin in which a predetermined pigment is mixed in such a manner that the wavelengths of the appropriate frequency bands are penetrated by the respective elements 301a of R, G, and B. In the present embodiment, a case in which a photosensitive resin in which a predetermined pigment is mixed with each element 301a is used is exemplified as an example. In the liquid crystal element E 31 on the active matrix substrate 301A, the base material of the liquid crystal layer 312 can be, for example, an ester system, a biphenyl system, a benzene cyclohexane system, a ring@hexa Burn system, or a phenyl 11 diebone system. Or various materials such as dioxane-based materials. The liquid crystal layer 312 is formed by mixing the above-mentioned base material with a material for a corresponding purpose. As the halogen electrode 311, an oxide conductive material such as ZT0 or IT0 can be used. In the present embodiment, a case where a transparent conductive film of ZT0 is used in series will be described as an example. Further, the common electrode is also the same as the pixel electrode 311, and an oxide conductive material such as ZT0 or IT0 can be used. In the present embodiment, the case of using a transparent conductive film of ZT0 is exemplified by an example of 44 321 390 201013606 4 . • The alignment films 314 and 315 are respectively formed such that the molecules of the liquid crystal layer 312 are aligned in a certain direction. The material is preferably formed of a material such as polyimide or the like depending on the material used in the liquid crystal layer 312. The dielectric protrusions 316 are used to control the alignment direction of the liquid crystal molecules when a bias voltage is applied to the liquid crystal layer 312, so as to face the liquid crystal layer 312 with respect to the central portion of the pixel electrode 311 via the liquid crystal layer 312. The surface protrudes toward the inside. The dielectric protrusions 316 can be formed using a dielectric material such as a photosensitive resin. As the light-shielding film 312, for example, a metal film such as chromium (Cr) or a photosensitive resist film in which a black resist of a light-shielding dispersion pigment represented by carbon black is dispersed can be used. In the present embodiment, a case in which a series is used and used is taken as an example. The spacer 317 is a member for securing a space in which a liquid crystal is sealed between the active matrix substrate 3〇1 and the opposite substrate 302A, and can be formed using, for example, a photosensitive resin. However, ' is not limited to this. Further, the polarizing plate and the 340 are films which are perpendicular to the traveling direction of light and are used for light which is strongly vibrated in a specific direction, and for example, polyvinyl alcohol which adsorbs iodine (I) (Polyvinyl Alc〇) can be used. H〇1, PVA) is formed by a film. However, it is not limited to this. Further, the counter substrate 302A is composed of, for example, a transparent substrate 32A. As the transparent substrate 320, for example, a glass substrate, a quartz substrate, or a plastic substrate 4 can be used as various transparent insulating substrates. Further, a flexible substrate may be used as the transparent substrate 320. (Manufacturing method) 321390 45 201013606 f: The wide-film type describes the liquid crystal display device manufacturing method of the present embodiment in detail. Fig. 1 and Fig. 2, Fig. 12-! to 12-6 and Fig. 13 are process diagrams showing a method of manufacturing the display panel 301 of the liquid crystal display device 300 according to the embodiment of the present invention. In the 11th to 1st and 1st, 2nd to 12th, and 13th, the continuous end faces cut by Β_Β' shown in Fig. 9 are shown. * In the present manufacturing method, first, the switching transistor (10) and the storage capacitor (3) are manufactured by the same steps as those described in the fifth to fifth embodiments of the present invention. The active matrix substrate is then sequentially formed on the movable matrix substrate 301A by, for example, a sputtering method, a CVD method, or the like, thereby forming a transparent ITO film having a contact electrically connected to the contact plug. Then, the film is patterned by, for example, photolithography, and as shown in Fig. 1, a halogen electrode 311 which is electrically connected to the barrier 51 is formed on the interlayer insulating film 50. However, it is not limited to this. It is also possible to form a pixel electrode 3 ιι using a printing technique such as a gel/sol method or a stenciling technique such as a mouth ink printing technique. Next, a solution of, for example, a polyimide solution is applied to the active matrix substrate 3形成1Α on which the halogen electrode 311 is formed, and the solution is dried and solidified to rub the polyimide film by, for example, rubbing. As shown in FIG. 11-2, an alignment film 314 for covering the halogen electrode 311 is formed on the active matrix substrate 3G1A. However, the present invention is not limited thereto, and the alignment film 314 may be formed by a coating process technique or the like as described, and the alignment film 314 may be treated by a rubbing method or the like. 321390 46 201013606 Then, a sealing material for preventing the outflow of the liquid crystal material is formed around the arrangement region of the halogen 301a of the active matrix substrate 301A. Further, various steps such as applying a conductive paste may be performed as needed. Further, in the present manufacturing method, the transparent substrate 320 for the counter substrate 3A2A is prepared, and Cr is deposited on a surface perpendicular to the thickness direction of the substrate by, for example, a sputtering method, a CVD method, a vacuum deposition method, or the like. A chrome film having a light-shielding property is formed on one of the two main faces, and the surface (hereinafter referred to as the upper surface). The chrome film is patterned by, for example, photolithography, whereby, as shown in the second drawing, the region on the active matrix substrate 3〇1A is formed as a region in which each element is hidden. A light-shielding light-shielding film 321 of a black matrix. However, limited to this, it is also possible to use a black resist and a photolithography film 32, and then, in the formation of the light shielding film 321 < the opposite substrate, the rotation, and the like, for example, R, G, B mixing There is a photosensitive resistant liquid for the predetermined pigment, and it is repeated as shown in the 钱 钱 钱 钱 钱 , , , , , 依 依 依 依 依 依 依 依 依 依 依 依 依 依 依 依 依 依 依 依 依 依 依 依 依 依 依 依 依 依The band is dip, * long penetrating filter, color H 64. However, the coating process technique, etc., which is described in the above description, is described in R, G, and B. Further, the color filter light-shielding film 321 is formed at the interface between the adjacent color filters 64. The underarm is disposed, for example, by using, for example, a dummy method, (10) 64 of the opposite substrate, thereby forming a transparent film to form a film, and then removing the film by photolithography. The heart of the figure is at least with one heart: two: = 321390 47 201013606 Forming /, through electrode 313. However, the present invention is not limited thereto, and the common electrode 313 may be formed by, for example, the above-described coating process technique. Next, on the counter substrate 3A2A on which the common electrode 313 is formed, by spin coating a solution such as a polyimide solution and drying the solution, the polyimide film is rubbed by, for example, a rubbing method, such as As shown in Fig. 12-4, an alignment film 315 is formed. However, the present invention is not limited thereto, and the alignment film 315 may be formed by, for example, the above-described coating process technique, and the alignment film 315 may be treated with a single material.

Next, on the opposite substrate 3〇2A on which the alignment film 315 is formed, the photosensitive photoresist is rotated and the toner is turned and developed after the toner is turned on, for example, after being lifted, the baking temperature is as shown in the 12th. As shown in Fig. 5, the corner portion of the shaped film of the y tree is formed on the alignment film 315 to form a triangular dielectric 316. However, the present invention is not limited thereto, and the dielectric f projections 316 having a predetermined shape may be formed by, for example, the above-described application, or the pattern may be three-dimensionally processed by a halftone mask by the light shirt method.

Next, on the opposite substrate on which the dielectric protrusions 316 are formed, (for example, a photosensitive resist liquid is applied, and the resist liquid is exposed and displayed as shown in FIG. 12-6, on the opposite substrate The division of the job is at least partially formed by the photosensitive door resin. However, the configuration is not limited thereto, and the spacer 317 may be formed by, for example, the above-described coating technique. Alternatively, the spacer may be used to ensure that the liquid crystal layer is sealed in a space-like manner. The photoreceptor electrode 31 is formed on the alignment film 314 array substrate 3, and the light shielding film 32 is formed. 64, 321390 48 201013606 The common substrate 313, the alignment film 315, the dielectric protrusion 316, and the spacer 317 are opposed to the substrate 302A, and then the liquid crystal is filled in the opposite substrate 302A surrounded by the sealing material. Thereafter, as shown in FIG. 13, the liquid crystal layer 312 is sealed between the active matrix substrate 301A and the opposite substrate 302A by bonding the active matrix substrate 301A and the opposite substrate 302A. Then, polarizing plates 330 and 340 to which polyvinyl alcohol (PVA) such as iodine (I) is adsorbed are prepared, and the active matrix substrate 301A and the opposite substrate for sealing the liquid crystal layer 312 are sandwiched by the polarizing plates 330 and 340. The way of 302A® fits on each other. Thereby, the display panel 301 including the element 301a having the layer structure shown in Fig. 10 was produced. Then, the display panel 101 manufactured as described above is mounted on a housing on which the signal control unit 102, the scan driving unit 103, the data driving unit 104, the capacitance line driving unit 1 and other components are mounted, thereby manufacturing the present embodiment. The liquid crystal display device 300. Further, in the above manufacturing steps, the step of cleaning the substrate is appropriately included, but the steps are omitted here for the sake of simplification of the description. As described above, the liquid crystal display device 300 of the present embodiment is configured such that all of the layers other than the light-shielding film 321 as the black matrix are formed by the film through which the light is transmitted. Therefore, the display panel 3 of the liquid crystal display device 3 can be greatly improved. The aperture ratio of 1. Further, since the light shielding film 321 is appropriately formed as needed, a full-open type display panel can be realized in a liquid crystal display device which does not require a black matrix. Further, in the configuration in which the aperture ratio is increased as described above, the degree of freedom in the arrangement of the liquid crystal element E31 or the light source 350 can be improved, so that the liquid crystal display device 300 having a large degree of freedom of designing a 321390390 201013606 can be realized. In the manufacturing method of the present embodiment, in the same manner as in the first or second embodiment of the present invention, the contact inner wiring 42 and the second wiring layer 43 are covered with a transparent semiconductor layer during the manufacturing process. Process damage to each of the wirings (42, 43, etc.) in the etching step and the like described later can be reduced. It is to be noted that the above-described embodiments are merely examples for carrying out the invention, and the present invention is not limited to the above-described embodiments, and various modifications based on specifications and the like are within the scope of the present invention. Various other embodiments are possible within the scope of the invention. _ [Simple description of the drawings] Fig. 1 shows an embodiment of the present invention! A block diagram of a schematic configuration of an organic EL display device. Fig. 2 shows an embodiment of the present invention! A schematic diagram of the schematic circuit of each element. Fig. 3 is a schematic plan view showing the layout structure of the active matrix substrates of the respective elements of the embodiment of the present invention. Fig. 4 is a schematic cross-sectional view showing the layer structure of each element of the first embodiment of the present invention. Fig. 5-1 is a cross-sectional view showing the process of the method for producing a panel of the organic germanium display device according to the first embodiment of the present invention. Fig. 5-2 is a cross-sectional view showing the process of manufacturing the display panel of the organic germanium display device according to the embodiment of the present invention (the second). Fig. 5-3 is a cross-sectional view showing the process of manufacturing the display panel of the organic germanium display device according to the first embodiment of the present invention (the third). 321390 50 201013606 Fig. 5-4 γ 争 ^5 — » -^ ^ t ', the organic EL display device of the first embodiment of the present invention is not the manufacturing method of the panel or the process section of the process ). Fig. 5 is a cross-sectional view showing the process of manufacturing a display panel of the organic display device according to the first embodiment of the present invention (the fifth). Fig. 5 is a cross-sectional view showing the process of manufacturing the display panel of the organic display device according to the embodiment of the present invention (the sixth). Fig. 5 is a cross-sectional view showing the process of the method for manufacturing a non-panel of the organic EL display device according to the first embodiment of the present invention (the seventh). Fig. 5 is a cross-sectional view showing a process of manufacturing a display panel of the organic EL display device according to the first embodiment of the present invention (the eighth). Fig. 5-9 is a cross-sectional view showing the process of manufacturing the display panel of the organic EL display device of the first embodiment of the present invention (ninth). Fig. 5-10 is a cross-sectional view showing the process of manufacturing the display panel of the organic germanium display device of the embodiment j of the present invention (the tenth). Fig. 6 is a schematic cross-sectional view showing the layer structure of each element of the embodiment 2 of the present invention. Figure 7 is a block diagram showing a schematic configuration of a liquid crystal display device of Embodiment 3 of the present invention. Fig. 8 is a view showing the schematic circuit configuration of each element of the third embodiment of the present invention. Fig. 9 is a schematic plan view showing the layout structure of the active matrix substrate of each pixel in the third embodiment of the present invention. Fig. 10 is a schematic cross-sectional view showing the layer structure of each pixel in the third embodiment of the present invention. 321390 51 2〇l〇13606 Fig. 11-1 is a process sectional view (part 1) showing a method of manufacturing a liquid crystal display panel according to a third embodiment of the present invention. Fig. 11-2 is a cross-sectional view showing the process of manufacturing a liquid crystal display panel according to Embodiment 3 of the present invention (Part 2). Further, Fig. 12-1 is a cross-sectional view showing a process of manufacturing a liquid crystal display panel according to Embodiment 3 of the present invention (Part 3). Fig. 12-2 is a cross-sectional view showing the process of manufacturing the liquid crystal display panel of the third embodiment of the present invention (fourth). Fig. 12-3 is a cross-sectional view showing the process of the liquid crystal display panel manufacturing method according to the third embodiment of the present invention (the fifth). Fig. 12-4 is a cross-sectional view showing the process of the liquid crystal display panel manufacturing method according to the third embodiment of the present invention (the sixth). Fig. 12-5 is a cross-sectional view showing the process of manufacturing the liquid crystal display panel of the third embodiment of the present invention (the seventh). Fig. 12-6 is a cross-sectional view showing the process of manufacturing the liquid crystal display panel of the third embodiment of the present invention (the eighth). Fig. 13 is a cross-sectional view showing the process of manufacturing a liquid crystal panel according to a third embodiment of the present invention (ninth). ,,, [Description of main component symbols] U, 15, 21 gate electrode 10, 320 transparent substrate U '16, 22 gate insulating film 13, 17, 23, 44 transparent semiconductor layer =, n_^14d, 18d, 24d_ ^, 35 lower electrode 32, 36 capacitor insulation 臈 321390 52 201013606

33, 37 upper electrode 40, 50 interlayer insulating film 41 first wiring layer 41a redundant wiring 42 contact inner wiring 43 second wiring layer 51 contact plug 61 13⁄4' pole electrode 62 organic film 63, 65 cathode electrode 64 color filter 66 auxiliary electrode 70 partition wall 80 passivation film 100 organic EL display device 100a lower surface 101' 301 display panel 101A, ^ 301A active matrix substrate 101a, 201a, 301a pixel 102 signal control portion 103 scan driving portion 104 data driving portion 105 capacitance Line driving unit 106 driving signal generating unit 200a, 300a upper surface 300 liquid crystal display device 302A opposite substrate 311 pixel electrode 312 liquid crystal layer 313 common electrode 314, 315 alignment film 316 dielectric protrusion 317 spacer 321 light shielding film 330, 340 Polarizer 350 Light source apl, ap2, ap3 Contact hole Cl Capacitor C31 Accumulator capacitor CONTI Scan control signal CONT2 Data control signal C0NT3 Capacitor line control signal CONT4 Illumination control signal D1 ' D2 Organic light-emitting diode DAT Video data signal DE data enable signal E31 liquid crystal element Hsync horizontal sync signal 53 321390 2010136 06

Lc Capacitor line Ld Data line Lg Scan line Lp Drive line LI, L2, L31 Wiring MCLK Main clock Q1, Q31 Switching transistor Q2 Driving transistor RC Stereo wiring Vcom Common voltage Von Turn-on voltage VDD Supply voltage Voff Gate turn-off voltage Vsync Vertical sync signal

54 321390

Claims (1)

201013606 4 VII. Patent application scope: An active matrix substrate, which is provided with a plurality of transistor components, the main: the dynamic matrix substrate has: the substrate 'is available for visible light to pass through; the wiring is formed on the substrate and is available The visible light penetrates; the semiconductor layer overlaps at least a portion of the wiring from the thickness direction of the substrate and is transparent to visible light; and the insulating film covers at least one of the wiring and the semiconductor layer, and For visible light penetration. 2. The active matrix substrate according to claim 1, wherein the wiring includes a main wiring, and a sub wiring that is branched from the main wiring and that connects the main wiring and the transistor. 3. The active matrix substrate of claim 1, wherein the wiring is formed of an inorganic oxide conductor material. 4. The active matrix substrate according to claim 1, wherein the semi-Q conductor layer is composed of an inorganic oxide semiconductor material. 5. The active matrix substrate according to claim 1, wherein the wiring is formed of a conductive material made of zinc tin oxide or an indium oxide, and the semiconductor layer is lower in carrier concentration than the wiring. It is composed of a semiconductor material made of tin oxide or a fragrance-containing emulsion. 6. The active matrix substrate according to claim 1, wherein one of the wiring lines functions as an electrode of the transistor element. 7. The active matrix substrate according to claim 1, wherein one of the aforementioned lines 321390 55 201013606 functions as a gate electrode, a source electrode and a gate electrode of the transistor element, and the insulating film A part functions as a gate insulating film of the above-described transistor element. 8. The active matrix substrate according to claim 1, wherein the first and second transistors and the capacitor are provided, and the wiring constitutes at least a part of one or more scanning lines and at least a part of one or more data lines. And at least a part of one or more drive lines, wherein a control terminal of the first transistor is connected to the scan line, an input terminal is connected to the data line, and a control terminal of the second transistor is connected to the first transistor The output terminal is connected to the drive line, and one of the capacitors is connected to the drive line, and the other terminal is connected to the control terminal of the second transistor. 9. The active matrix substrate according to claim 1, wherein the first transistor and the capacitor are provided, and the wiring system constitutes at least a part of one or more scanning lines, at least a part of one or more data lines, and 1 At least a part of the capacitor line or more, the control terminal of the first transistor is connected to the scanning line, and an input terminal thereof is connected to the data line, and one of the capacitor terminals is connected to an output terminal of the transistor. 10. The display panel is provided with: 201013606 The active matrix substrate described in claim 1; * The first electrode is formed on the active matrix substrate, and is available for: seeing light penetration; organic film forming The first electrode is formed on the first electrode, and the second electrode is formed on the organic film. 11. The display panel of claim 10, wherein the second electrode is transparent to visible light. 12. The display panel of claim </RTI> wherein the auxiliary electrode is electrically connected to the second electrode. 13. The display panel of claim 12, wherein the auxiliary electrode is transparent to visible light. 14. The display panel of claim 10, comprising a filter film formed on one or both of the upper layer and the lower layer with respect to the organic film. 15. A display panel comprising: Q: an active matrix substrate according to claim 1; a counter substrate for visible light penetration; and a liquid crystal element comprising a liquid crystal layer and two alignment films covering the liquid crystal layer And a buffer electrode and a common electrode of the laminate formed by the liquid crystal layer and the two alignment films; wherein the halogen electrode and the common electrode are transparent to light, and the halogen electrode is The wiring of the active matrix substrate is electrically connected. 57 321 390 201013606 The liquid crystal element is sandwiched between the active matrix substrate and the counter substrate. 16. The display panel of the fifteenth aspect of the invention, comprising: two polarizing plates comprising a laminate of the active matrix substrate, the liquid crystal element, and the counter substrate. 17. The panel of claim 15 which has a light-shielding film formed on the common electrode i and (4) a filter film which is formed on at least the common-electrode and penetrates a wavelength of a predetermined frequency band. 18. A type of display device is provided with a display panel as described in item iq of the patent scope. 19. A method of manufacturing an active matrix substrate, comprising: a first wiring forming step of forming a second wiring through which visible light is transmitted is formed on a substrate through which visible light can pass, and a portion of the first wiring includes a composition The electrode of the transistor element; the first insulating film forming step of forming the second insulating film on the substrate, wherein the first insulating film covers at least the knives of the first wiring, and a part of the insulating film is formed to constitute the transistor The insulating film of the element is permeable to visible light; the second wiring forming step forms a second wiring through which visible light is transmitted, on the first insulating film, and a part of the second wiring includes the transistor element a semiconductor layer forming step of forming a semiconductor layer for covering at least a portion of the second wiring and allowing visible light to pass through the first insulating film; and 58 321390 201013606 a second insulating film forming step for use Forming the first insulating layer on the second 'insulating film' covering the semiconductor layer and at least a part of the second wiring and allowing visible light to pass through On. 20. The method of manufacturing an active matrix substrate according to claim 19, wherein the second wiring is formed using an inorganic oxide conductor material. 21. The method of manufacturing an active matrix substrate according to claim 19, wherein the inorganic oxide semiconductor material is used to form the semiconductor layer. The method of manufacturing an active matrix substrate according to claim 19, wherein the second wiring is formed using a conductive material made of zinc lanthanum oxide or an indium oxide, and the carrier concentration ratio can be used. The semiconductor layer formed of the zinc tin oxide or the good indium oxide having a low wiring is formed to form the semiconductor layer. 23. The method of manufacturing an active matrix substrate according to claim 19, wherein in the semiconductor layer forming step, a semiconductor film covering the second wiring is formed on the first insulating film so that the first The semiconductor film is etched so that the wiring is not exposed, thereby forming the semiconductor layer. The manufacturing method of the active matrix substrate according to claim 19, wherein the first wiring forming step, the second insulating layer forming step, the second wiring forming step, and the semiconductor layer forming step f are described In at least one of the steps of forming the insulating film, the second wiring, the first 321390 59 201013606 insulating film, the second wiring, the semiconductor layer, or the second portion is formed by a printing method or an inkjet printing method. Insulating film. 60 321390