201012959 九、發明說明： 【發明所屬之技術領域】 本發明是有關於一種磁控濺射鍍獏裝置與表面處理裝 置，且特別是有關於一種高功率脈衝磁控濺射鍍膜裝置與 表面處理裝置。 【先前技術】 目如工業上常用的.電漿鑛膜技術大致可分為電弧電聚 籲鍍膜技術以及磁控濺射鍍膜技街兩種。以電弧電漿鍍膜技 術而言，其在約l〇-3(torr)之真空環境中，以操作陰極與陽 極低壓放電（約數十伏特）的方式產生電漿。將乾材 料）置放於陰極上，則靶材會因放電加熱變成金屬離子（電 漿）’朝向工件表面沈積。特別是在大電流引弧作用下電 漿的離子化率很高，因而電弧電漿鍍膜技術的優點便在於 所生成的膜層與基材（工件)之間的附著力較強。 V 然而，電弧之局部高溫會熔蝕靶材，使得靶材產生i # 〜ΙΟμιη尺寸的微粒而沉積在工件表面上，而這會使得工件 表面粗糙，造成品質下降。儘管習知技藝有提出增加曲線 形磁通道過濾電漿中的微粒，不過這會降低沉積速率，並 且在經多次碰撞仍會有些許次微米級微粒或碎片彈射通過 磁通道而到達工件附近，並污染工件表面且降低成 以磁，濺射鍍膜技術而言，其特點在於膜質細緻， 常用=光摩膜與半導體製程。磁控濺射鍍膜技術運作方 主要疋將靶材擺在陰極，並利用陰極與陽極輝光放電的^ 6 201012959 式產生電漿，以將乾材藏射出來而沉積在加有偏壓之工件 上。 然而’由於濺射材料主要是以中性原子與原子團為 主’因此磁控錢射鑛膜技術有離化率（i0nizati0n ratio)過低 的缺點。由於離化率一般小於5 %，因此不易提昇成膜之 • 附著力。此外’工作區間很窄，且工件僅能擺置於靶材前 方約5〜10cm的距離，因此大型工件鍍臈能力不足，而大201012959 IX. Description of the Invention: [Technical Field] The present invention relates to a magnetron sputtering rhodium plating apparatus and a surface treatment apparatus, and more particularly to a high power pulse magnetron sputtering coating apparatus and surface treatment apparatus . [Prior Art] It is commonly used in the industry. The plasma film technology can be roughly divided into two types: arc electric polymerization coating technology and magnetron sputtering coating technology. In the case of arc plasma coating technology, it produces plasma in a vacuum environment of about 1 〇 -3 (torr) by operating a cathode and an anode low-voltage discharge (about several tens of volts). When the dry material is placed on the cathode, the target is heated by discharge to become metal ions (plasma) deposited toward the surface of the workpiece. Especially in the case of high current arc ignition, the ionization rate of the plasma is very high. Therefore, the arc plasma coating technology has the advantage that the adhesion between the formed film layer and the substrate (workpiece) is strong. V However, the local high temperature of the arc will erode the target, causing the target to produce particles of size i # ΙΟμιη deposited on the surface of the workpiece, which will make the surface of the workpiece rough and cause deterioration in quality. Although it has been proposed to increase the number of particles in the curved magnetic channel filter plasma, this will reduce the deposition rate, and after several collisions, there will still be some micron-sized particles or fragments ejecting through the magnetic channel to reach the vicinity of the workpiece, and Contamination of the surface of the workpiece and reduction to magnetic, sputter coating technology, characterized by fine film quality, commonly used = optical film and semiconductor process. The magnetron sputtering coating technology is mainly used to place the target at the cathode and generate plasma by means of cathode and anode glow discharge (6, 2010, 12959) to deposit the dry material and deposit it on the biased workpiece. . However, since the sputter material is mainly dominated by neutral atoms and radicals, the magnetron-controlled mineral film technology has the disadvantage that the ionization rate is too low. Since the ionization rate is generally less than 5%, it is difficult to improve the adhesion of the film. In addition, the working area is very narrow, and the workpiece can only be placed at a distance of about 5 to 10 cm in front of the target, so the large workpiece has insufficient plating capacity and large
C 多只能應用在平面鍍膜方面。 參 儘管習知技藝有提出加裝離子源的方式以輔助中性粒 子離子化’不過其效果有限’且操作條件嚴格。此外，習 知技藝之非平衡磁控濺射鍍膜技術可靠非平衡磁場以增加 離化空間部分材料，但是離化率僅有10 %〜20 %，且當磁 ， 路一旦平衡失控’則發散電子束會有燒毀工件表面的缺W點。 - 圖1為電漿操作的電壓電流示意圖，其中橫座標為電 流A ’縱座標為電壓V。請參考圖1，圖中清楚標示出電弧 β 電漿鍍膜技術與磁控濺射鍍膜技術的工作區段。以電浆技 0 術而言，電流的大小一般會與生成電漿的離化率呈正向關 係’而愈大的電流便代表愈大的離化率，以提昇成膜之附 著力。 由於電弧電漿鍍膜技術的工作區間具有較大的電流， 因此其成膜之附著力較佳。然而，前文亦提及會有微粒;冗 積在工件表面上而造成品質下降。此外，由於電弧電聚鑛 膜技術是以低壓進行操作，因此高電流乘以低電歷戶斤得__ 的功率P(P=VxA)不會過大。 反觀磁控濺射鍍膜技術的工作區間，其電流較小而使 7 201012959 得電漿的離化率過低’使得成膜附著力不佳’而研發人員 均是以提昇電流為主要目標。請再參考圖若從磁控濺 射鍍膜技術的工作區間再繼續提升電壓’則電流會與電壓 同向增加而進入高功率電漿區。儘管電流的增加可增加電 漿的離化率，但是功率P卻會因為電流與電壓的同向增加 . 而呈倍數成長，進而使得丨.電源供應器2.靶材以及3.工件 均無法持續承受如此的高功率而損壞或熔融。 高功率脈衝磁控減:射（High Power Pulse Magnetron 魯 Sputtering, HPPMS)技術是一種在1999年才開始發展的真 空鍍膜技術，其為磁控濺射的一種，且其對應的工作區間 即為圖1之高功率電衆區。高功率脈衝磁控減射的脈衝峰· 值功率是前述磁控濺射的100倍，而約在1000〜3000W/cm2 . 範圍。但是由於作用時間約在100〜150微秒，因此其平均 功率與前述之磁控藏射的功率相當。 然而，高功率脈衝磁控濺射技術仍有許多特性仍在學 * 術研究中，並僅使用在表面清潔之用。因此在鍍膜應用上， ^ 仍有技術瓶頸存在》 【發明内容】 有鑑於此，本發明之目的是提供一種磁控麟鍵膜裝 成膜脈衝磁控_技術達成高品質的賴，且其 成膜具有尚附著性與高均勻性之特點。 此外，本發明之另一目 提供一 可加速工件表面處理的效率。面處理裝置 為達上述或是其他目的，本發明提出-種磁控_鍍 201012959 體適於對工件進行鍍膜，此磁控濺射鍍膜裝置包括 源：，而：=(h〇ider)、磁控電衆源以及高功率脈衝電 是通入至 电聚源包括基座、磁控件與把材。反應氣體 真空㈣内進行作用’而承載件是配置於真空腔 而配置=工件是配置於承載件上。磁控電漿源是相對工件 材是配置_ 體、磁、丞座上。尚功率脈衝電源組是耦接該真空腔 ❿ # 電漿、原二電漿源與承載件，並輸入一高壓脈衝電源至磁控 面上二’ Μ㈣與反錢财生而賴於工件之表 =達上述或是其他目的，本發明提出一種表面處理裝 對工件進行表面處理，此表面處理裝置包括真空 机吉办載件以及高功率脈衝電源器，其中承載件是配置 二。含腔體内以承載工件，而反應氣體是通入皇真空腔體 古廠：功率脈衝電源器是純真空腔體與承載件，並輸入 衝電源至承载件，以使工件與反應氣體產生一電漿 而於工件之表面上進行表面處理。 ^本發明之—實施例中，上述之高壓脈衝電源之高功 率脈衝工作效率可小於1〇%。 ，本發明之—實施例中，上述之高功率脈衝電源組可 1 率脈衝電源器與分壓電路，其中高功率脈衝電源 功腔體與磁控電聚源’且分壓電路是耦接於高 可勺二1源與承載件之間。此外，高功率脈衝電源組亦 其二高功率脈衝電源11與第三高功率脈衝電源器， 、向功率脈衝電源器是輕接真空腔體與磁控電聚 201012959 源，且第二高功率脈衝電源器是作為該第一高功率脈衝電 源的同步分壓而耦接到承載件。 在本發明之實施例中，上述之高壓脈衝電源之波形 可為方波、弦波、高頻方波包、高頻弦波包或是正負電^ 對稱之高頻弦波包’且高壓脈衝電源之波形更可包括特高 負電壓脈衝波，而特高負電壓脈衝波之波寬例如是介於5ns 〜lps ’且該特向負電壓脈衝波之電壓值例如小於·ικγ。 在本發明之一實施例中’上述之磁控濺射鍍膜裝置更 參包括真空幫浦’且真空幫浦可為機械幫浦、魯式幫^、擴 散幫浦或渦輪分子幫浦。 、 在本發明之一實施例中，上述之承載件可為金屬失 具，而工件可為金屬、合金、半導體或非導體，且鈿 包括金屬、合金或半導體。 β 在本#明之一實施例中，上述之靶材可於工件表面形 成純金屬膜、反應性膜或透明膜，而純金屬膜之材^是選 自鈦、鉻、金、銀、鋅、錫、鎂及其組合其中之一，且反 鏐應 性 膜之材 質是選 ^C can only be used in flat coating. Although the prior art has proposed a method of adding an ion source to assist neutral particle ionization 'however, the effect is limited' and the operating conditions are strict. In addition, the unbalanced magnetron sputtering coating technology of the prior art is reliable in non-equilibrium magnetic field to increase the material of the ionization space, but the ionization rate is only 10%~20%, and when the magnetic field is out of balance, the divergence electrons The bundle will have a missing W spot that burns the surface of the workpiece. - Figure 1 is a schematic diagram of voltage and current for plasma operation, where the abscissa is the current A' ordinate as voltage V. Please refer to Figure 1, which clearly shows the working section of the arc-β plasma coating technology and the magnetron sputtering coating technology. In the case of plasma technology, the magnitude of the current is generally positively related to the ionization rate of the generated plasma. The larger the current, the greater the ionization rate, to enhance the adhesion of the film. Since the working area of the arc plasma coating technology has a large current, the adhesion of the film formation is better. However, the foregoing also mentions that there are particles; it is redundant on the surface of the workpiece and causes deterioration in quality. In addition, since the arc electroporation membrane technology operates at a low pressure, the power P (P = VxA) of the high current multiplied by the low electric power meter is not excessive. In contrast, the working range of the magnetron sputtering coating technology, the current is small, so that the ionization rate of the plasma obtained in 201012959 is too low, so that the adhesion of the film is not good, and the research and development personnel are mainly focused on the lifting current. Please refer to the figure again. From the working range of the magnetron sputtering coating technology, continue to increase the voltage', then the current will increase in the same direction as the voltage and enter the high-power plasma area. Although the increase of current can increase the ionization rate of plasma, the power P will increase in multiples due to the increase of current and voltage. Therefore, the power supply 2. target and 3. workpiece cannot be sustained. Withstanding such high power, it is damaged or melted. High Power Pulse Magnetron (Sputtering, HPPMS) technology is a vacuum coating technology that began to develop in 1999. It is a kind of magnetron sputtering, and its corresponding working range is the graph. 1 high power electric area. The pulse peak value power of the high power pulsed magnetron reduction is 100 times that of the aforementioned magnetron sputtering, and is in the range of about 1000 to 3000 W/cm 2 . However, since the action time is about 100 to 150 microseconds, the average power is equivalent to the power of the aforementioned magnetron storage. However, many of the features of high-power pulsed magnetron sputtering technology are still being studied and used only for surface cleaning. Therefore, in the coating application, there is still a technical bottleneck. [Invention] In view of the above, the object of the present invention is to provide a magnetically controlled lining membrane film-forming pulsed magnetron _ technology to achieve high quality, and its The film is characterized by adhesion and high uniformity. Further, another object of the present invention is to provide an efficiency which can accelerate the surface treatment of a workpiece. The surface treatment device is for the above or other purposes, and the invention proposes that the magnetron_plating 201012959 body is suitable for coating a workpiece, the magnetron sputtering coating device comprises a source: and: = (h〇ider), magnetic The power control source and the high-power pulse power are connected to the power source including the base, the magnetic control and the material. The reaction gas is operated in the vacuum (4) and the carrier is disposed in the vacuum chamber. The workpiece is disposed on the carrier. The magnetron plasma source is configured on the workpiece _ body, magnet, and squat. The power pulse power supply group is coupled to the vacuum chamber 电 #plasma, the original two plasma source and the carrier, and inputs a high-voltage pulse power supply to the magnetic control surface two ' Μ (four) and anti-money and wealth depends on the workpiece table For the above or other purposes, the present invention provides a surface treatment apparatus for surface treatment of a workpiece, the surface treatment apparatus comprising a vacuum machine carrier and a high power pulse power supply, wherein the carrier is configured two. The chamber is filled with a workpiece, and the reaction gas is passed into the ancient vacuum chamber. The power pulse power supply is a pure vacuum chamber and a carrier, and the power is supplied to the carrier to generate a workpiece and a reaction gas. The plasma is surface treated on the surface of the workpiece. In the embodiment of the present invention, the high power pulse power supply of the above high voltage pulse power supply may have an operating efficiency of less than 1%. In the embodiment of the present invention, the high-power pulse power supply group can be a 1-rate pulse power supply and a voltage dividing circuit, wherein the high-power pulse power supply cavity and the magnetron power source are coupled to each other and the voltage dividing circuit is coupled. Connected between the high source and the carrier. In addition, the high-power pulse power supply group also has two high-power pulse power supplies 11 and a third high-power pulse power supply device, and the power pulse power supply device is connected to the vacuum cavity body and the magnetron-controlled power supply 201012959 source, and the second high-power pulse. The power supply is coupled to the carrier as a synchronous partial pressure of the first high power pulsed power supply. In an embodiment of the invention, the waveform of the high voltage pulse power supply may be a square wave, a sine wave, a high frequency square wave packet, a high frequency sine wave packet or a positive and negative electric symmetrical high frequency sine wave packet 'and a high voltage pulse. The waveform of the power source may further include an ultra-high negative voltage pulse wave, and the wavelength of the ultra-high negative voltage pulse wave is, for example, 5 ns to lps ', and the voltage value of the special negative voltage pulse wave is, for example, less than ·ικγ. In an embodiment of the invention, the magnetron sputtering coating apparatus described above further includes a vacuum pump and the vacuum pump may be a mechanical pump, a luer, a diffusion pump or a turbo molecular pump. In an embodiment of the invention, the carrier may be a metal loss, and the workpiece may be a metal, an alloy, a semiconductor or a non-conductor, and the metal may comprise a metal, an alloy or a semiconductor. In one embodiment of the present invention, the target material may form a pure metal film, a reactive film or a transparent film on the surface of the workpiece, and the material of the pure metal film is selected from the group consisting of titanium, chromium, gold, silver, zinc, One of tin, magnesium and a combination thereof, and the material of the anti-coherent film is selected ^
TiN，TiCN，CrN，CrCN，TiAlN，TiAl，Si3N4，TiAlCN 及其組合其 中之一，又透明膜之材質是選自Ti〇2，Si〇2，iTO及其組 中之一 0 綜上所述，在本發明之磁控濺射鍍骐裝置中，可同 兼具習知電弧電讓錄膜技術以及磁控濺射鍍膜技術^優 點，並對應克服其缺點。在本發明之表面處理裝置中，口 加速表面處理的速率。 了 為讓本發明之上述和其他目的、特徵和優點能更明顯 201012959 * 易1^ 了文特舉較佳實施例，並配合賴®式，作詳細說 明如下。 【實施方式_】 立圖^為依據本發明一實施例之磁控濺射鍍膜裝置的示 w圖吻參考圖2，本發明之磁控濺射鍍膜裝置2〇〇是用 ‘於對工件50進行鑛膜，而磁控賤射鍍膜裝置200包括真空 腔體210、承载件22〇、磁控電漿源23〇以及高功率脈衝電 源組240，其中承載件220與磁控電漿源230是相對配置 於真空腔體210内’而高功率脈衝電源組24〇是麵接真空 腔體210、磁控電漿源220與承載件230。 承接上述，磁控電漿源230包括基座232、磁控件234 與靶材236 ’其中磁控件234是配置於基座232中，且靶 材236是配置於基座232上。此外，工件5〇是配置於承載 20上以與無材236相對，且反應氣，體（未繪示）是通入 • 至真空腔體210内進行反應。當高功率脈衝電源組24〇輸 魯入兩壓脈衝電源(未繪示）至磁控電漿源220，會使靶材236 與反應氣體產生電漿（未繪示）而成膜於工件50之表面上。 詳細而言，高功率脈衝電源姐240是輸入至負壓至承 栽件220與磁控電漿源23〇，並輸入正壓至真空腔體21〇。 虽向功率脈衝電源組240輸入高壓脈衝電源至磁控電漿源 230的瞬間’會於靶材236表面游離出電子，而電子會朝 向真空腔體210移動。磁控件234會使電子呈螺旋狀移動 以增加電子撞擊反應氣體的機率，而當反應氣體被游離成 正離子後，這些正離子便會撞擊靶材236而使靶材236游 201012959 ，這些電子、正離子以及游離的㈣便 =電裂’而電聚便會因為承載件220 向工 二考’圖， 工作區門《你發明在輸入高壓脈衝電源的瞬間，其 70:: 高功率電聚區，使得電漿的離化率可達 Ο 撞材‘ 大，昇成膜的附著力。此外，正離子 蓉級的『㈣過程均是原子等級的撞擊，而非電狐放電 . 』，因此不會產生微米級或是次微米等級的 微粒’而餅成_常均“具有高品質賴膜效果。 >僅s在二壓脈衝的瞬間會因為高壓高電流而產生瞬間 同功率的狀癌’但是由於高功率脈衝工作效率(⑽丫 ra⑽ 通常在1G%以下’因此平均功率會大幅降低至習知磁控賤 射鑛膜裝置的等級，而不致對姉236或是卫件5G造成損 壞。 一般而言，高功率脈衝工作效率等於開啟時間除以週 期時間，而週期時間即為開啟時間加上關閉時間’亦即為 >φ Duty ratio = on time / period time 或是 Duty ratio = on time / (on time + off time)。以高功率脈衝工作效率為5%為例， 假若瞬間功率高達1000W/cm2，但平均功率會大幅下降至 50W/cm2 ° 以實際微觀物理情況而言，在高壓脈衝的瞬間，磁控 電漿源230會產生『一團』電漿射向工件50成膜。在此同 時，由於高壓高電流之高功率影響，祀材236或是工件5〇 均會瞬間昇溫而接近熔融的狀態（此乃由詳細的實驗參數 決定，亦可將瞬間功率調低）。之後，電源便會切斷而使得 12 201012959 電壓與電流均為零，亦即功率為零。如此一來’靶材236 與工件50便會迅速降溫，立尚未成膜於工件50表面上的 電漿亦會因為自身的結合而消失。所以在到達下一次南壓 脈衝前，靶材236與工件5〇又可回復成正常工作溫度’以 面對下一次的馬壓脈衝。 詳細而言’高壓脈衝之電壓均大於陰極、陽極放電啟 動電壓。當輝光放電時，電壓越高會使得放電電流越大。 在放電初期’脈衝時間亦可以調整放電瞬間電流大小’等 參 到放電瞬間電流飽和時，脈衝時間增加亦不會增加放電電 流。過低之放電電流值表示靶材濺射量很低，相對地氣體 之離化量較高’ 一般容易產生較不純之膜質。有些反應性 膜被覆（如TiO)時，其靶表面介電層τί〇χ之功函數(work function)低，亦即表面低電壓下就容易釋放出電子，因此 其放電電流飽和值非常高，常超過電源負載，以及靶材之 介電層電荷累積過量，引發電弧放電，此時通常會用脈衝 時間來限制其放電電流❶脈衝頻率可以調整脈衝功率， 配適當脈衝時間’最佳狀態可達到乾材说及工件％能 受之溫度、電弧放電臨界值之下，其輝光放電產生之把 236離子量及離化轉達最高。此軸膜品㈣較佳。 參考圖2，本發明的⑽之—便是在於可負載 間南功率的高功率脈衝電源組240,而高功率脈衝雷 接到磁控電漿源、22()與承载件挪實、 例而S，咼功率脈衝電源組24〇 器-與第二高功率脈衝電源器2:第其;;力 衝電源器242是麵接到真空腔趙加與磁控電漿 201012959 .且第二高功率脈衝電源器244是作為第—高功率脈衝電源 器242的同步分壓而耦接到承载件23〇。如此一來，第一 高功率脈衝電源器242與第二高功率脈衝電源器2料均可 在高功率脈衝電壓輸入的瞬間正常運作，以使電漿能順利 射向工件50成膜。 • π假若第二高功率脈衝電源器244置換成普通的電源供 • j器，則在高功率脈衝電壓輸入的瞬間，普通的電源供應 态便會因為無法負载過高的功率而瞬間自動關閉（shut • down)。如此一來’承載件22〇便不會成為負壓的狀態，而 造成電漿在脈衝的瞬間不會射向工件50，並在脈衝過後自 動結合消失。 換句話說，尚功率脈衝電源組240使得把材236激發 出電子而產生電漿’且電漿射入工件5〇之電子又會再回到 而功率脈衝電源組240以形成電路循環。亦即若循環體中 的構件自動關閉或無法正常運作，便會導致電漿無法順利 成膜於工件50上，而習知研發的瓶頸亦在此處。 Μ β請再參考圖2 ’儘管本實施例之高功率脈衝電源組240 是由第一高功率脈衝電源器242與第二高功率脈衝電源器 244所構成，不過本發明並不限制高功率脈衝電源組的組 成，而圖3另繪示出依據本發明另一實施例之高功率脈衝 電源組的示意圖。請參考圖3，為求圖示簡單，本實施例 之咼功率脈衝電源組34〇僅繪示連接磁控電漿源22〇(等效 於靶材226)與承載件23〇(等效於工件5〇)，其中高功率脈 衝電源組340包括高功率脈衝電源器342與分壓電路344， 而而功率脈衝電源器342是耦接磁控電漿源220以構成電 14 201012959 、性迴路，且分壓電路344是透過高功率脈衝電源342而供 應電源至承載件230。 如此一來，分壓電路344便可構成高功率脈衝電源器 342的另外一個電性迴路，以使電槳在順利射向工件5〇 後’電子可自分壓電路344流回高功率脈衝電源器342。 . 此外’藉由簡單結構的分壓電路344以取代前述之第二高 功率脈衝電源器244，可進一步降低磁控濺射錢膜裝置2〇〇 的建置成本。附帶一提的是，儘管圖示中的分壓電路344 籲是由多個電容與可變電阻構成，但是本發明並不限制分壓 電路344的組成，熟悉此項技藝者當可依據前述說明而稍 加調整’惟其均仍屬本發明之範疇内。 圖4A與圖4B分別為依據本發明一實施例之磁控電漿 源的立體剖視圖與側視剖面圖。請參考圖4A、4B與圖2， 本實施例之磁控電漿源2^0包括基座232、磁控件234與 把材236，其中基座232是用以承載把材236，而磁控件 234乃為半環形迴路磁場構造。詳細而言，磁控件234包 參括中心磁鐵234a與導磁體234b、234c、234d，而中心磁鐵 234a與導磁體234b、234c、234d形成半環狀結構，而使磁 力線S通過靶材236的上方。亦即當靶材236因為壓差而 激發出電子後，電子便會因為磁力線s的影響而呈現螺旋 狀的路徑走向，藉此以增加碰撞反應氣體的機率。 此外，南功率脈衝電源組24〇的負極（未繪示）是耦接 到磁控電漿源230的乾材236，或是高功率脈衝電源組240 的負極先搞接到磁控電漿源230的基座232，而基座232 再耦接到乾材236。在本實施例中，高功率脈衝電源組24〇 15 201012959 =正極是直餘接到真空腔體21G以構成電性迴路。不 過’在其他實施例中，高功率脈衝電源組 =到磁控電浆源23。的基座232’而在此情 電漿源230便會增設絕緣體238以區隔陰極與 工 磁控電漿源230亦可增設水、刼極另卜’ -爯錯闇7逮乾材236冷卻。 更可實施例中，磁控濺射鐵膜裝置2⑼ 更了〇括進耽π 212與真空幫浦214，其中進21 Ο 開設於真空賴2U)科壁以通人反錢體而真空幫浦 214是用於將真空腔體21〇抽真空。h 、 為氬氣。 真此外，反應氣體例如 在本實施例中，㈣率脈衝電源組24〇 是稱接 到磁控電漿源2灣材236，而高功率脈衝電源組24〇 的，極是輕接到真空腔體21〇，並以真空幫浦214抽氣至 10論以下之真空度。當真空度達到10.5如“乂下，便從 進氣口 212充入反應氣體（氬氣）至1(r3t〇rr，並接著輸入高 . 壓脈衝電源驅動磁控電漿源230。 II 在陰極靶材326的有效磁場區，會有大量電子迴旋碰 撞而產生氬氣游離，游離之氬離子在脈衝時間内撞擊負電 壓之靶材326，濺射出靶原子。如果脈衝電源時間寬度足 夠長’則會在陰極與陽極之間會引發數百至數千安培之電 流。以傳統之之直流或脈衝電源而言，其保護裝置均會因 為瞬間的大電流而短暫切斷輸出，而本發明之高功率脈衝 電源組240可具有承受數千至數萬安培之瞬間輸出，且脈 衝時間可以調整。 在純金屬靶材236濺射時’靶材236飽和瞬間電流每 201012959 平方公分約3安培以内，脈衝時間可調範圍很大，從數十 至數萬微秒居可，只要平均功率在靶材236以及工件可 以忍受範圍内。此外，當充入.叫、〇2等氣體被覆反 應性介電膜時，金屬靶材表面容易毒化而產生電弧放電， 因此要縮短脈衝時間至幾微秒〜幾十微秒，以降低靶材236 • 瞬間電流至每平方公分3安培以内。如此即可減少異常電 • 弧放電，以提昇成膜品質。另外，當以半導體之乾材 濺鍍時’則類似被覆反應性介電膜相同的方式進行操作， • 並將脈衝電流再些許調低。 ' 再次強調的是，本發明在施加脈衝高壓時，會於陰極 與陽極之間產生瞬間大電流放電’以伴隨濺射出大量乾材 236原子，而沈積在搭配高功率偏魔電源之工件％上。由 於磁控電漿源220所產生之電漿中含有高密度（約7〇 %〜 100%)之離子，因此所沈積之膜質細緻，且膜附著力極佳。 因此本發明之脈衝艘膜乃同時具有習知磁控濺射鍍膜技術 - 與電弧電漿鍍膜技術的優點’並克服其相對應的缺點。此 *鲁外’由於尚功率脈衝工作政率通常在.10%以下，因此平均 功率會大幅降低至習知磁控賤射鍍膜裴置的等級，而不致 對靶材236或是工件50造成熔融或損壞。 圖5A與圖5B為依據本發明一實施例之多種高壓脈衝 電源的示意圖。請參考圖5A’本發明並不限定高壓脈衝電 源的波形，舉例而言，高壓脈衝電源在脈衝瞬間的波形可 為方波、弦波、高頻方波包、高頻弦波包，波後略微正電 壓之方波及弦波，以及玉負電壓對稱之高頻弦波包等等。 一般而言，相同脈衝頻率之方波、弦波較對應之波包有較 201012959 主要是因高頻波包 增加粒子碰撞促成 高之平均濺射率’但離化率後者較高 可減少電子被加速時間以及反向力^^ 離化率增加。 、 此外 -輯，电雜以負電壓輪出，以作為磁控藏射 之用，而正脈衝尚壓可驅動苴侦 氣壓環境中，有時-般脈衝性㈣。在不賴膜 選擇在圖5A之波形前再加特51發放電’此時可 示），其波寬介於5ns〜w m壓脈衝波攻如圖沾戶斤 ❶One of TiN, TiCN, CrN, CrCN, TiAlN, TiAl, Si3N4, TiAlCN and combinations thereof, and the material of the transparent film is selected from one of Ti〇2, Si〇2, iTO and its group. In the magnetron sputtering rhodium plating apparatus of the present invention, the advantages of the conventional arc electric recording film technology and the magnetron sputtering coating technology can be combined, and the disadvantages thereof are overcome. In the surface treating apparatus of the present invention, the mouth accelerates the rate of surface treatment. The above and other objects, features, and advantages of the present invention will become more apparent. The preferred embodiments of the present invention are described in the accompanying drawings. [Embodiment] FIG. 2 is a schematic diagram of a magnetron sputtering coating device according to an embodiment of the present invention. Referring to FIG. 2, the magnetron sputtering coating device 2 of the present invention is used for a workpiece 50. The magnetic film coating device 200 includes a vacuum chamber 210, a carrier 22, a magnetron source 23, and a high-power pulse power pack 240, wherein the carrier 220 and the magnetron source 230 are The high-power pulse power source group 24 is surface-connected to the vacuum chamber 210, the magnetron plasma source 220, and the carrier 230. In response to the above, the magnetron plasma source 230 includes a base 232, a magnetic control 234 and a target 236' wherein the magnetic control 234 is disposed in the base 232 and the target 236 is disposed on the base 232. In addition, the workpiece 5 is disposed on the carrier 20 to oppose the material 236, and the reaction gas, the body (not shown) is introduced into the vacuum chamber 210 for reaction. When the high-power pulse power supply unit 24 inputs the two-pulse pulse power supply (not shown) to the magnetron plasma source 220, the target 236 and the reaction gas are plasma-generated (not shown) to form a film on the workpiece 50. On the surface. In detail, the high power pulse power supply device 240 is input to the negative pressure to the carrier 220 and the magnetron plasma source 23, and inputs a positive pressure to the vacuum chamber 21A. While the high voltage pulsed power supply to the power pulsed power supply unit 240 is input to the magnetron plasma source 230, electrons are released from the surface of the target 236, and electrons move toward the vacuum chamber 210. The magnetic control 234 causes the electrons to move helically to increase the probability of electrons colliding with the reactive gas. When the reactive gas is released into positive ions, the positive ions will strike the target 236 and cause the target 236 to travel 201012959. Ions and free (four) will be ^electrocracking' and electropolymerization will be due to the bearing 220 to the second test, the work area door "You invented the high-voltage power supply at the moment of inputting high-voltage pulse power, 70:: high-power electric cluster, The ionization rate of the plasma is such that the collision material is large and the adhesion of the film is increased. In addition, the "(4) process of the positive ion-rich stage is an atomic-level impact, not an electric fox discharge." Therefore, micron- or sub-micron-sized particles are not produced, and the cake is always _" Membrane effect. > Only s at the moment of the second pressure pulse will produce instantaneous tumor of the same power due to high voltage and high current', but the average power will be greatly reduced due to the high power pulse operating efficiency ((10)丫ra(10) is usually below 1G%' To the level of the conventional magnetron sputum mining membrane device, without causing damage to the 姊236 or the Guard 5G. In general, the high power pulse working efficiency is equal to the opening time divided by the cycle time, and the cycle time is the opening time. Plus the closing time 'is φ Duty ratio = on time / period time or Duty ratio = on time / (on time + off time). Take the high power pulse operating efficiency as 5%, if the instantaneous power Up to 1000W/cm2, but the average power will drop to 50W/cm2 °. In actual microscopic physical conditions, at the moment of high-voltage pulse, the magnetron plasma source 230 will produce a "small" plasma to the workpiece 50. At the same time, due to the high power of high voltage and high current, the coffin 236 or the workpiece 5 〇 will instantly heat up and approach the molten state (this is determined by detailed experimental parameters, and the instantaneous power can also be lowered). The power supply will be cut off so that the voltage and current of 12 201012959 are zero, that is, the power is zero. Thus, the target 236 and the workpiece 50 will rapidly cool down, and the plasma that has not been formed on the surface of the workpiece 50 will be formed. It will also disappear due to its own combination. Therefore, before reaching the next south pressure pulse, the target 236 and the workpiece 5 can be restored to the normal working temperature 'to face the next horse pressure pulse. Detailedly, 'high voltage pulse The voltage is greater than the cathode and anode discharge starting voltage. When the glow is discharged, the higher the voltage, the larger the discharge current. In the initial stage of the discharge, the pulse time can also adjust the current level of the discharge, and the current is saturated when the discharge is instantaneous. The increase in time does not increase the discharge current. The value of the discharge current that is too low indicates that the amount of sputtering of the target is very low, and the amount of ionization of the gas is relatively high. Less pure film. When some reactive film is coated (such as TiO), the work surface of the target surface dielectric layer τί〇χ is low, that is, the surface is easy to emit electrons under low voltage, so the discharge current The saturation value is very high, often exceeds the power supply load, and the charge accumulation of the dielectric layer of the target is excessive, causing arc discharge. At this time, the pulse time is usually used to limit the discharge current. The pulse frequency can adjust the pulse power, with the appropriate pulse time. The best condition can reach the temperature of the dry material and the temperature of the workpiece and the critical value of the arc discharge. The glow discharge produces the highest amount of 236 ion and ionization. This shaft film product (4) is preferred. Referring to FIG. 2, (10) of the present invention is a high power pulse power supply group 240 capable of carrying a south power, and a high power pulse is connected to a magnetron source, 22 () and a carrier, for example. S, 咼 power pulse power supply group 24 - - with the second high power pulse power supply 2: the first;; rushing power supply 242 is connected to the vacuum chamber Zhao Jia and magnetic control plasma 201012959. And the second high power The pulse power supply 244 is coupled to the carrier 23A as a synchronous divided voltage of the first high power pulse power supply 242. In this way, the first high-power pulse power supply 242 and the second high-power pulse power supply 2 can operate normally at the moment of high-power pulse voltage input, so that the plasma can be smoothly shot toward the workpiece 50. • π If the second high-power pulse power supply 244 is replaced by a normal power supply, the normal power supply state will be automatically turned off instantaneously due to the inability to load excessive power at the moment of high-power pulse voltage input ( Shut • down). As a result, the carrier member 22 does not become in a negative pressure state, and the plasma is not incident on the workpiece 50 at the moment of the pulse, and the automatic bonding disappears after the pulse. In other words, the power pulsed power pack 240 causes the material 236 to excite electrons to produce a plasma' and the electrons that are injected into the workpiece 5 will return to the power pulse power pack 240 to form a circuit cycle. That is, if the components in the circulation body are automatically closed or fail to operate normally, the plasma may not be smoothly formed on the workpiece 50, and the bottleneck of the conventional development is also here. Μ β Please refer to FIG. 2 'Although the high power pulse power supply unit 240 of the present embodiment is composed of the first high power pulse power supply 242 and the second high power pulse power supply 244, the present invention does not limit the high power pulse. The composition of the power pack, and FIG. 3 further illustrates a schematic diagram of a high power pulse power pack in accordance with another embodiment of the present invention. Referring to FIG. 3, for simplicity of illustration, the power pulse power supply group 34 of the present embodiment only shows the connection of the magnetron plasma source 22 (equivalent to the target 226) and the carrier 23 (equivalent to The workpiece 5 〇), wherein the high-power pulse power supply group 340 includes a high-power pulse power supply 342 and a voltage dividing circuit 344, and the power pulse power supply 342 is coupled to the magnetron plasma source 220 to constitute an electric 14 201012959 And the voltage dividing circuit 344 supplies power to the carrier 230 through the high power pulse power source 342. In this way, the voltage dividing circuit 344 can constitute another electrical circuit of the high-power pulse power supply 342, so that the electron can flow back to the workpiece 5 ', the electronic self-dividing circuit 344 can flow back to the high-power pulse. Power supply 342. Further, by replacing the aforementioned second high-power pulse power supply 244 with a simple-divided voltage dividing circuit 344, the cost of constructing the magnetron sputtering money film device 2 can be further reduced. Incidentally, although the voltage dividing circuit 344 in the drawing is composed of a plurality of capacitors and variable resistors, the present invention does not limit the composition of the voltage dividing circuit 344, and can be relied upon by those skilled in the art. The foregoing description has been slightly modified', but they are still within the scope of the present invention. 4A and 4B are respectively a perspective cross-sectional view and a side cross-sectional view of a magnetron source according to an embodiment of the present invention. Referring to FIG. 4A, FIG. 4B and FIG. 2, the magnetron plasma source 2^0 of the embodiment includes a base 232, a magnetic control 234 and a material 236, wherein the base 232 is used to carry the material 236, and the magnetic control 234 is a semi-loop magnetic field structure. In detail, the magnetic control 234 includes the central magnet 234a and the magnets 234b, 234c, 234d, and the central magnet 234a and the magnetic conductors 234b, 234c, 234d form a semi-annular structure, and the magnetic lines of force S pass above the target 236. . That is, when the target 236 excites electrons due to the pressure difference, the electrons exhibit a spiral path due to the influence of the magnetic lines of force s, thereby increasing the probability of colliding the reaction gas. In addition, the negative pole (not shown) of the south power pulse power supply group 24 is coupled to the dry material 236 of the magnetron plasma source 230, or the negative pole of the high power pulse power supply unit 240 is first connected to the magnetron plasma source. The base 232 of the 230 is recoupled to the dry material 236. In the present embodiment, the high power pulse power supply unit 24 〇 15 201012959 = the positive electrode is directly connected to the vacuum chamber 21G to constitute an electrical circuit. However, in other embodiments, the high power pulsed power supply group = to the magnetron plasma source 23. The pedestal 232', in this case, the plasma source 230 will be provided with an insulator 238 to separate the cathode and the magnetic control plasma source 230 can also add water, bungee other '-- 爯 暗 dark 7 catch dry material 236 cooling . In a further embodiment, the magnetron sputtering iron film device 2 (9) further includes a 耽 π 212 and a vacuum pump 214, wherein the 21 Ο is opened in the vacuum 2 2U) the wall to pass the anti-money body and the vacuum pump 214 is for evacuating the vacuum chamber 21〇. h, is argon. In addition, the reaction gas is, for example, in the present embodiment, the (four) rate pulse power supply group 24 is connected to the magnetron plasma source 2 Bay material 236, and the high power pulse power source group is 24 ,, which is extremely lightly connected to the vacuum chamber. The body is 21 〇, and the vacuum pump 214 is evacuated to a vacuum of 10 or less. When the degree of vacuum reaches 10.5 such as "underarm, the reaction gas (argon) is charged from the inlet 212 to 1 (r3t〇rr, and then the input is high. The pulse pulse power source drives the magnetron plasma source 230. II at the cathode In the effective magnetic field region of the target 326, a large number of electron cyclotron collisions generate argon free, and the free argon ions strike the negative voltage target 326 during the pulse time to sputter the target atoms. If the pulse power supply has a sufficiently long time width, then A current of hundreds to thousands of amps is induced between the cathode and the anode. In the case of a conventional direct current or pulsed power supply, the protection device temporarily cuts off the output due to a large instantaneous current, and the present invention is high. The power pulse power pack 240 can have an instantaneous output that can withstand thousands to tens of thousands of amperes, and the pulse time can be adjusted. When the pure metal target 236 is sputtered, the target 236 is saturated with an instantaneous current of about 3 amps per 201012959 cm 2 , pulse The time can be adjusted in a wide range, from tens to tens of thousands of microseconds, as long as the average power is within the range of the target 236 and the workpiece can be tolerated. In addition, when the gas is filled, the gas is covered. In the case of a dielectric film, the surface of the metal target is easily poisoned to cause arc discharge, so the pulse time is shortened to several microseconds to several tens of microseconds to reduce the instantaneous current of the target 236 to 3 amps per square centimeter. It can reduce abnormal electrical arc discharge to improve film quality. In addition, when it is sputtered with dry semiconductor materials, it operates in the same way as coated reactive dielectric film, and the pulse current is slightly reduced. ' It is emphasized again that the present invention generates an instantaneous large current discharge between the cathode and the anode when a pulsed high voltage is applied to accompany the sputtering of a large amount of dry material 236 atoms, and is deposited on the workpiece with a high power partial magic power supply. Since the plasma generated by the magnetron plasma source 220 contains high density (about 7〇% to 100%) ions, the deposited film is fine and the film adhesion is excellent. Therefore, the pulse film of the present invention At the same time, it has the advantages of conventional magnetron sputtering coating technology - and the advantages of arc plasma coating technology 'and overcome its corresponding shortcomings. This * Lu Wai' due to the power pulse rate is usually at .10% Then, the average power is greatly reduced to the level of the conventional magnetron sputtering coating without causing melting or damage to the target 236 or the workpiece 50. Figures 5A and 5B show various embodiments in accordance with an embodiment of the present invention. Schematic diagram of the high voltage pulse power supply. Please refer to FIG. 5A'. The invention does not limit the waveform of the high voltage pulse power supply. For example, the waveform of the high voltage pulse power supply at the pulse instant can be a square wave, a sine wave, a high frequency square wave package, and a high frequency. Sine wave packet, square wave and sine wave with slightly positive voltage after wave, and high frequency sine wave packet with jade negative voltage symmetry, etc. Generally speaking, the square wave and sine wave of the same pulse frequency have more corresponding wave packets than 201012959 The main reason is that the high-frequency wave packet increases the particle collision to promote the high average sputtering rate', but the higher the ionization rate, the lower the electron acceleration time and the reverse force. In addition, the series is mixed with a negative voltage for magnetron storage, while the positive pulse is still driving to detect the pressure in the atmosphere, sometimes pulse-like (four). In addition to the film, select the 51-discharge before the waveform in Figure 5A, which can be shown at this time. The wave width is between 5 ns and w m. The pulse wave is attacked.
电蜃值小於-1KV，以Μ肋弓丨 發放電。另外，正常驅動磁控濺射之高功率脈衝工作效率 (Duty ratio)通常在10 %以下。 玎并双千 附帶一提的是，本發明並不限& 種類。-般而言，真空度要求: = 空幫浦214 ^ 胥承疋根據鍍膜環境需求而定 而工作氣壓可從大氣至高真空，_不等。—般大氣; !〇>rr之鑛膜需求，則真空幫冑214可為機械幫浦或魯3 幫浦’若真空度要求在氣壓在1(Γ2論以下，則真空幫》 214可為機械幫浦加上擴散幫浦，或是機械幫浦加:糾 分子幫浦抽氣等等。另外，承載件22()可為金屬夹具幻 持工件50，不過本發明並不限定承載件22〇的種類，亦^ 限定承載件220固定工件50的方式。再者’承载件22〇所 夾持的工件50可為金屬，合金、半導體或是非導體，且即 使工件50為非導體，仍具有加強鍍膜原子能量之功能。 鑛膜的種類主要可分為純金屬膜、反應性膜與透明膜 三類，其中純金屬膜可包括鈦(Ti)、鉻(Cr)、金、^、辞、' 錫或鎂等等金屬，而反應性臈可包括The electric enthalpy value is less than -1KV, and the rib arch is discharged. In addition, the high power pulse duty efficiency (normalty) of normal drive magnetron sputtering is usually less than 10%.玎和双千 Incidentally, the present invention is not limited to & In general, the vacuum requirements: = empty pump 214 ^ 胥 疋 疋 according to the needs of the coating environment and the working pressure can be from the atmosphere to the high vacuum, _.般 大气 ; ; ; ; ; ; ; ; ; 真空 真空 真空 真空 真空 真空 真空 真空 真空 真空 真空 真空 真空 真空 真空 真空 真空 真空 真空 真空 真空 真空 真空 真空 真空 真空 真空 真空 真空 真空 真空 真空 真空 真空 真空 真空 真空 真空 真空 真空 真空 真空 真空 真空 真空 真空 真空The mechanical pump plus a diffusion pump, or a mechanical pump plus: a molecular pump, etc. In addition, the carrier 22 () can be a metal fixture to hold the workpiece 50, although the invention does not limit the carrier 22 The type of the crucible also defines the manner in which the carrier 220 holds the workpiece 50. Further, the workpiece 50 held by the carrier 22 can be metal, alloy, semiconductor or non-conductor, and even if the workpiece 50 is non-conductor, Strengthening the function of coating atomic energy. The types of mineral film can be mainly divided into pure metal film, reactive film and transparent film. The pure metal film can include titanium (Ti), chromium (Cr), gold, ^, rhetoric, 'Metals such as tin or magnesium, and reactivity can include
TiN，TiCN，CrN，CrCN,TiAlN，TiAI,Si3N4，TiAlCN 等等，且透 201012959 明膜可包括Ti〇2，Si〇2，ITO。因此對應之靶材236可包括金 屬、合金或半導體類’不過本發明並不限定乾材236的種 類。 請再參考圖4A、4B，值的一提的是，本發明並不限定 磁控電漿源230的實際結構為何。舉例而言，磁控電蒙源 230之輕材236可包括平面、圓柱等乾型，且磁控電漿源 230之結構可為圓柱旋轉型及圓柱往復型，以同時具有抗 靶毒化功能，並能大幅鍍膜距離以實現大型工件50鍍膜。 ❿詳細而言，由於本發明所生成電漿的離化率可達70%以 上’因此電漿可被正極吸引而迅速移動。如此一來，本發 明即可加大或調整乾材236與工件50之間的距離，以對大 型工件50進行鍍膜。此外，本發明亦不限定磁控電漿源 230的數量，舉例而言，本發明亦可配置多個磁控電漿源 230 ’以達到多靶射出的效果。 圖6為依據本發明一實施例之磁控濺射鍍膜蔌置的實 • 驗數據圖’而從示波器直接擷取出來。請參考圖6，Chi ❹與ch2分別為靶材236的電壓與電流，且Ch3與Ch4分別 為工件50的電壓與電流，其中示波器顯示在鍍膜階段的靶 材236脈衝電壓為-550V、靶材236脈衝電流最高為50A、 工件50的脈衝偏壓可達4〇v以及工件5〇的脈衝電流最高 可達2.5A。此外，工件5〇之偏壓暫態時間比電源脈衝波 時間寬約三倍’且脈衝波後之殘留電漿仍可被工件50吸 收。 以下將以特定的實驗參數說明成膜過程。 實施例1 :高功率脈衝磁控濺射沈積TiN膜。 201012959 將真空腔體210抽氣至ixi〇-5 torr後，充入氬氣26〇 seem至氣壓維持在3 7xl〇_3t〇rr，並將工件5〇與磁控電漿 源230耦接同一高功率脈衝電源器。接著要進行工件50表 面清潔’設定高壓脈衝電源的電壓為_65〇V，開啟時間（〇n time)為 1〇〇μ8’關閉時間（〇fftime)為 19〇〇叫，頻率 5〇〇Hz。 在啟動的瞬間’靶材236與工件50之間會產生藍色鈦電 漿’其中乾材236之脈衝電流為300 A，而平均電流為7 a， 且平均功率5 KW。此時工件50脈衝偏壓與靶材236脈衝 ❹電壓同步，電壓值為-650 V，先執行離子擊轟清潔工件表 面，時間5分鐘。 接著進行後鍍純鈦膜，先調整開啟時間（on time)為 20ps，關閉時間（off time)為1980ps，頻率500 Hz，而其餘 條件不變。然後逐漸充入II氣至70 seem，氣壓保持在約 4.Ixl0_3 torr，此時電漿呈淡橘色，而鍍膜_間為1小時。 完成鍍膜後’取出工件50量測特性，工件50表面呈 金黃色TiN膜。當工件50距離靶材236為5、1〇、l5em 0處時，鍍膜速率分別為每小時平均1、0.5及〇·3μδ。此外， ' 無論工件50距離靶材230的距離大小，成膜的附著力方面 均達100Ν以上。 實施例2 :高功率脈衝磁控濺射沈積Si〇2在破璃、石夕 晶圓及PET塑膠片上。 本實施例是採用30 cm2工作面積之磁控濺射圓形靶材 236，而把材236為純度99."9 %的矽（Si)，並在乾材236 前方14 cm、23 cm處各置放一組破璃、梦晶圓及pg丁試 片（均為工件）。這些工件5〇是配置在金屬之承载件22〇 20 201012959 上’並接上一部350 KHz脈衝偏壓電源器。 將真空腔體210抽氣至lxl〇-5 t〇rr後，充入氬氣及氧 氣各130及7 seem ’以讓氣壓升至lxl〇-2 t〇rr。設定高壓 脈衝電源的電壓為-1000V ’開啟時間（〇n time)為i〇MS，關 閉時間（off time)為1000μδ。當啟動輸出時，靶材236與工 • 件50之間會產生淡白色電漿，且靶材236最高峰脈衝電流 23 Α(—般非高功率脈衝電源之電流最高峰值僅約2Α)。此 時沈積Si〇2所用平均功率為370 W，平均電流0.37 A。工 鲁件50偏壓脈衝電壓在-50 V ’頻率350 KHz，沈積時間約1 小時。 量測成膜光學特性，成膜密度及透明度皆比傳統磁控 濺射高’且Si〇2膜最厚達2μηι，在玻璃、矽晶圓及pet基 材上均未剝落，且PET基材也沒有過熱變形現象。在距離 靶材230約14 cm處的鍍膜速率可達每小時1μιη ,且成膜 截面結構經SEM觀察非常平滑，完全沒有柱狀結構，顯見 其矽電漿之離化率高，且沈積的Si02膜非常細緻。 鲁 儘管刖述說明均以電製錄膜而說明本發明的概念，作 是本發明並不僅限於電漿鍍膜，而高功率脈衝磁控濺射的 概念亦可應用在表面處理，以下將在另舉實施例說明本發 明之表面處理裝置。 圖7為依據本發明一實施例之表面處理裝置的示音 圖。請參考圖7，本發明之表面處理裝置7〇〇是用對工件 60進行表面處理，而表面處理裝置7〇〇包括真空腔體7^、 承載件720以及高功率脈衝電源器73〇，其中承載件了汕 是配置於真空腔體71G内以承載玉件6G，而高功率脈衝電 21 201012959 源器730是輕接真空腔體710舆承載件72〇。 ,此外，反應氣體（未繪示）是通入至真空腔體71〇内進 行反應。當高功率脈衝電源器73〇輪入高壓脈衝電源（未繪 示）至承載件720時，會在工件60表面附近教發出電漿、··’曰 而電漿又會射向工件60以對工件60進行表面處理。另外， • 電漿形成的細節前文均已詳述’於此便不再寶述。 • 在本實施例中’反應氣體可為氮氣以進行氤化熱處理 以增加工件60硬度，不過本發明不限定表面處理裝'置7〇〇 ❹所進行表面處理的種類。類似前述，表面處理装置7〇〇更 可包括進氣口 712與真空幫浦7M，其中進氣口 712是開 設於真空腔體710的外壁以通入反應氣體，而真空幫浦714 是用於將真空腔體710抽真空。 以下將以特定的實驗參數說明表面處理過程。 實施例3:以高功率脈衝電源器進行電漿氮化熱處理 金屬工件1小時 將真空腔體710抽氣至lxl0_5torr後，充入氫氣2，1〇〇 ❷ seem與氮氣700 seem以將氣壓維持在2 torr。將高功率脈 衝電源器730之負極稱接到工件60(等同於耦接至承載件 720)，並將高功率脈衝電源器730之正極輕接至真空腔體 710，其中工件60可為直徑1英吋SS304及SACM645鋼 棒。 設定高壓脈衝電源的電壓為-1000V，開啟時間（〇!^丨11^) 為200ps ’關閉時間（off time)為lOOOps。當啟動輸出時， 工件60附近產生粉紅色之氮氣氫氣混合電漿，而工作60 脈衝電流峰值A，平均電流1.5 A，平均功率1500 W， 22 201012959 處理時間1小時。 當電漿氮化處理結束後，取出工件60量測膜機械特 性，其SS304(原200HV)及SACM645(原300HV)鋼棒表面 硬度達830 HV及973 HV，約等同用傳統氮化直流電源處 理10小時之效果。 . 綜上所述，本發明之磁控濺射鍍膜裝置與表面處理裝 置至少具有下列優點： 一、 在輸入高壓脈衝電源的瞬間，產生電漿的工作區 ❹間是位在高功率電漿區，使得電漿的離化率可達7〇%以 上’藉此以大幅提昇成膜的附著力。 二、 本發明的工作區間並非以電弧放電為主， ， 不會產生微米級或是次微米等級的微粒，而使得成膜 父 均勻而具有vfj品質的鍛膜效果。 三、 相較於習知之表面處理裝置而言，本發明之 處理裝置具有高離化之電漿，故可加快表面處理致率面 • 迅速提升工件硬度。 ^ 參 雖然本發明已以較佳實施例揭露如上，然其並非用£ 限定本發明’任何熟習此技藝者，在不脫離本發明之於以 和範圍内，當可作些許之更動與潤飾，因此本發明之 摩色圍當視後附之申請專利範圍所界定者為準。 “ 【圖式簡單說明】 圖1為電漿操作的電壓電流示意圖。 意圖 圖2為依據本發明一實施例之磁控賤射錢祺裝置的 23 201012959 圖3為依據本發明另一實施例之高功率脈衝電源組的 示意圖。 圖4A與圖4B分別為依據本發明一實施例之磁控電漿 源的立體剖視圖與側視剖面圖。 圖5 A與圖5B為依據本發明一實施例之多種高壓脈衝 . 電源的示意圖。 圖6為依據本發明一實施例之磁控濺射鍍膜裝置的實 驗數據圖。 φ 圖7為依據本發明一實施例之表面處理装置的示意 圖。 【主要元件符號說明】 50、60 :工件 200 :磁控濺射鍍膜裝置‘ 210 :真空腔體 212 :進氣口 214 :真空幫浦 220 :承載件 230 :磁控電漿源 232 :基座 234 :磁控件 234a :中心磁鐵 234b、234c、234d :導磁體 236 :靶材 238 :絕緣體 24 201012959 239 :水冷器 240、340 :高功率脈衝電源組 242 :第一高功率脈衝電源器 244 :第二高功率脈衝電源器 342 :高功率脈衝電源器 344 :分壓電路 700 :表面處理裝置 710 :真空腔體TiN, TiCN, CrN, CrCN, TiAlN, TiAI, Si3N4, TiAlCN, etc., and the transparent film of 201012959 may include Ti〇2, Si〇2, ITO. Accordingly, the corresponding target 236 may comprise a metal, alloy or semiconductor type. However, the invention does not limit the type of dry material 236. Referring again to Figures 4A and 4B, it is noted that the present invention does not limit the actual configuration of the magnetron plasma source 230. For example, the light material 236 of the magnetron power source 230 may include a dry type such as a plane or a cylinder, and the structure of the magnetron plasma source 230 may be a cylindrical rotating type and a cylindrical reciprocating type to simultaneously have an anti-target poisoning function. And the coating distance can be greatly increased to achieve large workpiece 50 coating. In detail, since the plasma generated by the present invention has a ionization rate of 70% or more, the plasma can be attracted by the positive electrode to move rapidly. As a result, the present invention can increase or adjust the distance between the dry material 236 and the workpiece 50 to coat the large workpiece 50. In addition, the present invention also does not limit the number of magnetron plasma sources 230. For example, the present invention may also be configured with a plurality of magnetron plasma sources 230' to achieve multi-target injection. Fig. 6 is a diagram showing the actual data of a magnetron sputtering coating device according to an embodiment of the present invention taken directly from an oscilloscope. Referring to FIG. 6, Chi ❹ and ch2 are respectively the voltage and current of the target 236, and Ch3 and Ch4 are respectively the voltage and current of the workpiece 50, wherein the oscilloscope displays the target 236 pulse voltage at the coating stage is -550 V, the target The pulse current of 236 is up to 50A, the pulse bias of workpiece 50 is up to 4〇v, and the pulse current of workpiece 5〇 is up to 2.5A. In addition, the bias transient time of the workpiece 5 is about three times wider than the power pulse time and the residual plasma after the pulse wave can still be absorbed by the workpiece 50. The film formation process will be described below with specific experimental parameters. Example 1: A TiN film was deposited by high power pulsed magnetron sputtering. 201012959 After pumping the vacuum chamber 210 to the ixi〇-5 torr, it is filled with argon gas 26〇seem until the air pressure is maintained at 3 7xl〇_3t〇rr, and the workpiece 5〇 is coupled with the magnetron plasma source 230. High power pulse power supply. Next, the surface of the workpiece 50 should be cleaned. 'Set the voltage of the high-voltage pulse power supply to _65〇V, and the turn-on time (〇n time) is 1〇〇μ8' off time (〇fftime) is 19 〇〇, frequency 5〇〇Hz . At the instant of activation, a blue titanium plasma is produced between the target 236 and the workpiece 50, wherein the dry material 236 has a pulse current of 300 A, and an average current of 7 a, and an average power of 5 KW. At this time, the pulse bias of the workpiece 50 is synchronized with the pulse ❹ voltage of the target 236, and the voltage value is -650 V. The surface of the workpiece is cleaned by ion bombardment for 5 minutes. Then, the post-plated pure titanium film was first adjusted to have an on time of 20 ps, an off time of 1980 ps, and a frequency of 500 Hz, while the remaining conditions were unchanged. Then gradually fill the II gas to 70 seem, the pressure is maintained at about 4.Ixl0_3 torr, at this time the plasma is light orange, and the coating _ is 1 hour. After the coating is completed, the measurement characteristics of the workpiece 50 are taken out, and the surface of the workpiece 50 is a golden yellow TiN film. When the workpiece 50 is at a distance of 5, 1 〇, and l5em 0 from the target 236, the coating rate is 1, 0.5 and 〇·3 μδ per hour, respectively. Further, 'the adhesion of the film formation is 100 Ν or more regardless of the distance of the workpiece 50 from the target 230. Example 2: High-power pulsed magnetron sputtering was used to deposit Si〇2 on a glass, a stone wafer and a PET plastic sheet. In this embodiment, a magnetron sputtering circular target 236 having a working area of 30 cm 2 is used, and the material 236 is a purity of 99. "9 % bismuth (Si), and 14 cm, 23 cm in front of the dry material 236 Each set of broken glass, dream wafer and pg test piece (all workpieces). These workpieces 5 are disposed on the metal carrier 22 〇 20 201012959 and are connected to a 350 KHz pulse bias power supply. After evacuating the vacuum chamber 210 to lxl 〇 -5 t rrrr, argon gas and oxygen gas 130 and 7 seem were charged to raise the gas pressure to lxl 〇 -2 t rr. The voltage of the high-voltage pulse power supply is set to -1000 V. The turn-on time (〇n time) is i〇MS, and the off time is 1000 μδ. When the output is activated, a pale white plasma is produced between the target 236 and the workpiece 50, and the highest peak pulse current of the target 236 is 23 Α (the current peak of the non-high power pulse power supply is only about 2 Α). At this time, the average power used to deposit Si〇2 was 370 W, and the average current was 0.37 A. The 50-pulse voltage of the workpiece is 50 KHz at a frequency of -50 V ′ and the deposition time is about 1 hour. Measuring the optical properties of the film, the film density and transparency are higher than the conventional magnetron sputtering and the thickness of the Si〇2 film is up to 2μηι, and it is not peeled off on the glass, the germanium wafer and the pet substrate, and the PET substrate There is also no overheating deformation. The coating rate is about 1 μm per hour at a distance of about 14 cm from the target 230, and the film-forming cross-section structure is very smooth by SEM observation. There is no columnar structure at all, and the ionization rate of the tantalum plasma is high, and the deposited SiO 2 is deposited. The film is very detailed. Although the description explains the concept of the invention by electro-recording, the invention is not limited to plasma coating, and the concept of high-power pulsed magnetron sputtering can also be applied to surface treatment, and the following will be The surface treatment apparatus of the present invention will be described by way of examples. Figure 7 is a sound diagram of a surface treatment apparatus in accordance with an embodiment of the present invention. Referring to FIG. 7, the surface treatment apparatus 7 of the present invention performs surface treatment on the workpiece 60, and the surface treatment apparatus 7 includes a vacuum chamber 7^, a carrier 720, and a high-power pulse power supply 73A, wherein The carrier member is disposed in the vacuum chamber 71G to carry the jade member 6G, and the high power pulse power 21 201012959 source 730 is a vacuum chamber 710 舆 carrier 72 轻. Further, a reaction gas (not shown) is introduced into the vacuum chamber 71 to carry out a reaction. When the high-power pulse power supply 73 turns into a high-voltage pulse power source (not shown) to the carrier 720, it will teach a plasma near the surface of the workpiece 60, and the plasma will be directed to the workpiece 60 to The workpiece 60 is surface treated. In addition, • The details of plasma formation have been detailed above. • In the present embodiment, the reaction gas may be nitrogen gas for heat treatment to increase the hardness of the workpiece 60. However, the present invention does not limit the type of surface treatment performed by the surface treatment device. Similarly, the surface treatment device 7 may further include an air inlet 712 and a vacuum pump 7M, wherein the air inlet 712 is opened on the outer wall of the vacuum chamber 710 to open the reaction gas, and the vacuum pump 714 is used for The vacuum chamber 710 is evacuated. The surface treatment process will be described below with specific experimental parameters. Example 3: Plasma nitriding heat treatment of a metal workpiece with a high-power pulse power supply for 1 hour. After evacuating the vacuum chamber 710 to lxl0_5torr, hydrogen gas 2,1〇〇❷ seem and nitrogen gas 700 seem to maintain the gas pressure at 2 torr. The negative pole of the high power pulse power supply 730 is weighed to the workpiece 60 (equivalently coupled to the carrier 720), and the positive pole of the high power pulse power supply 730 is lightly connected to the vacuum chamber 710, wherein the workpiece 60 can be a diameter 1 British SS304 and SACM645 steel rods. Set the voltage of the high-voltage pulse power supply to -1000V, and the turn-on time (〇!^丨11^) to 200ps' off time is lOOOOps. When the output is started, a pink nitrogen-hydrogen mixed plasma is generated near the workpiece 60, and the 60-pulse current peak A is operated, the average current is 1.5 A, the average power is 1500 W, and the processing time is 1 hour. After the plasma nitriding treatment is completed, the mechanical properties of the workpiece 60 are taken out, and the surface hardness of the SS304 (formerly 200HV) and SACM645 (formerly 300HV) steel bars is 830 HV and 973 HV, which is equivalent to the treatment with a conventional nitrogen nitride power source. 10 hours of effect. In summary, the magnetron sputtering coating device and the surface treatment device of the present invention have at least the following advantages: 1. At the moment of inputting a high-voltage pulse power source, the working area for generating plasma is located in the high-power plasma region. So that the ionization rate of the plasma can reach 7〇% or more', thereby greatly increasing the adhesion of the film formation. 2. The working area of the present invention is not based on arc discharge, and does not generate micron-sized or sub-micron-sized particles, so that the film-forming parent is uniform and has a vfj quality forging effect. 3. Compared with the conventional surface treatment apparatus, the treatment apparatus of the present invention has a high ionization plasma, so that the surface treatment yield surface can be accelerated. • The hardness of the workpiece is rapidly increased. Although the present invention has been disclosed in the above preferred embodiments, it is not intended to limit the invention, and the invention may be modified and modified without departing from the scope of the invention. Therefore, the invention of the present invention is defined by the scope of the patent application. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic diagram of voltage and current for plasma operation. FIG. 2 is a diagram of a magnetically controlled smashing device according to an embodiment of the present invention. 23 201012959 FIG. 3 is a diagram of another embodiment of the present invention. 4A and 4B are respectively a perspective cross-sectional view and a side cross-sectional view of a magnetron source according to an embodiment of the invention. Fig. 5A and Fig. 5B are diagrams showing an embodiment of the present invention. Fig. 6 is a view showing experimental data of a magnetron sputtering coating apparatus according to an embodiment of the present invention. Fig. 7 is a schematic view showing a surface treatment apparatus according to an embodiment of the present invention. Description] 50, 60: Workpiece 200: Magnetron sputtering coating device '210: Vacuum chamber 212: Air inlet 214: Vacuum pump 220: Carrier 230: Magnetically controlled plasma source 232: Base 234: Magnetic control 234a: central magnet 234b, 234c, 234d: magnetizer 236: target 238: insulator 24 201012959 239: water cooler 240, 340: high power pulse power supply group 242: first high power pulse power supply 244: second high power pulse Electricity 342: 344 high-power pulse source: voltage dividing circuit 700: a surface treatment apparatus 710: Vacuum chamber
712 :進氣口 714 ·•真空幫浦 720 :承載件 730 :高功率脈衝電源器 S .磁力線 25712: Air inlet 714 ·• Vacuum pump 720: Carrier 730: High power pulse power supply S. Magnetic field line 25