1232503 五、發明說明（1) 〔發明所屬之技術領域〕 本案為一種栅極裝置，尤指設於濺鍍系統之濺鍍槍和 被鍍物之間，且電連接至可變電壓源而具有電壓準位，可 減緩通過栅極裝置之帶電離子速度之金屬網。 〔先前技術〕 薄膜沈積為一種可應用於半導體元件之表面處理方 法’其製程係在晶圓基板表面上成長一層同質或異質材料 薄膜，以獲得美觀、耐磨、耐熱及耐蝕等特性。 薄膜沈積依據沈積過程中，以是否含有化學反應機制，分 為物理氣相沈積（PVD，Physical Vapor Deposition)及化 學氣相沈積（CVD，Chemical Vapor Deposition)。在半導 體製私發展中’主要的py D技術有蒸鑛（E v a p 〇 r a t i 〇 n )及濺 鍵（Sputtering)兩種。其中，濺鍍法係於真空中充入氬氣 (Ar)之類的反應氣體，施以高電壓（約300〜1000 V)產生 輝光放電形成電漿（Plasma)，並驅使電漿之氬氣正離子 (Ar)轟擊陰極之無材（Target，作為鍍膜之材料）表面， f得數材之原子或分子射出沉積在被鍍物上。 第 圖為習知之賤鍍系統（S p u 11 e r )的示意圖。如圖所 不’賤鑛系統主要包含真空腔體n(Chamber)、濺鍍槍 (Sputtering Gun)、靶材 13 (Target)、電源供應器 14 (Power Supply)和被鍍物μ。真空腔體丨丨係用來進行濺鍍 之腔體。濺錢系統運作時，於真空腔體丨丨内注入氬氣（Ar) 作為反應氣體’而在濺鍍槍丨2的外殼1 2丨及靶材丨3之間，1232503 V. Description of the invention (1) [Technical field to which the invention belongs] This case is a gate device, especially a sputtering device provided between the sputtering gun and the object to be plated of the sputtering system, and is electrically connected to a variable voltage source. The voltage level slows down the metal mesh of the charged ions passing through the gate device. [Previous Technology] Thin film deposition is a surface treatment method that can be applied to semiconductor devices. The process is to grow a thin film of a homogeneous or heterogeneous material on the surface of a wafer substrate to obtain characteristics such as beauty, abrasion resistance, heat resistance, and corrosion resistance. Thin film deposition is divided into physical vapor deposition (PVD, Physical Vapor Deposition) and chemical vapor deposition (CVD, Chemical Vapor Deposition) based on whether it contains a chemical reaction mechanism during the deposition process. In the private development of the semiconductor system, the main py D technologies include two types: steam mining (E v a p ota r i t) and sputtering (sputtering). Among them, the sputtering method is to fill a vacuum with a reactive gas such as argon (Ar), apply a high voltage (about 300 ~ 1000 V) to generate a glow discharge to form a plasma, and drive the plasma's argon gas. Positive ions (Ar) bombarded the surface of the cathode (Target, as the material of the coating), and several atoms or molecules of f were ejected and deposited on the object to be plated. The figure is a schematic diagram of a conventional base plating system (S p u 11 e r). As shown in the figure, the base mine system mainly includes a vacuum cavity n (Chamber), a sputtering gun, a target 13 (Target), a power supply 14 (Power Supply), and a plated object μ. The vacuum chamber is used for sputtering. When the money sputtering system is in operation, argon (Ar) is injected into the vacuum chamber 丨 丨 as a reaction gas' between the shell 1 2 丨 of the sputtering gun 丨 2 and the target 丨 3,
第4頁 1232503 五、發明說明（2) =利用電源供應器14施加3〇〇〜1〇〇〇¥之高電壓（靶材 ^體時使用直流電；為絕緣體時用射頻交流電源），為 ，，場將氬氣（Ar)解離為氬氣正離子（Ar+)形成電漿。產 得高能量之氬氣正離子(Ar+)，將會爲ΐΙ 巧南電壓陰極之乾材13，藉由動量之轉換，除了合擊電 ί二電子外，亦會將靶材13的原子轟擊出來，而濺；在 日日囡基板等被鍍物1 5上形成鑛膜。 在 第:圖中的永久磁鐵122係用以產生磁場123。由於濺鍍 程中’約有七成左右的能量係轉換為熱能耗損#，而只有 兩成能置才係用於濺鍍上。因此，習知之濺鍍系統會加入 組磁鐵，即水久磁鐵丨22，使電場與磁場丨23相互作用， 讓游離電子以螺旋狀之路徑朝陽極（電連至高電壓陽極之 外殼12丨）前進，增加游離電子與氬氣原子（Ar)撞擊的機 會，促使氣Λϋ子Ur+)生成機率提高，進而使得氬氣正 離子（Ar+)#擊輕材13的數量倍增’可提高濺鍍率。 擊 然而，f 2爻過程中，氬氣正離子（Ar+)除了受到電場 加速而轟擊13外，也會因為輻射效應而撞擊被鍍物 ，。如第-圖所示’被鑛物15受到氬氣正離子（Ar+)之撞 〆將會導致^物15表面受#，使得被鑛物说鍛膜效 果大打折扣…對於帶電離子所造成之輕射傷害有必要 加以防止。 本案目的〕 為因應上述需求，本案乃構思—種栅極裝置，將其設 第5頁 1232503 五、發明說明（3) 置於濺鍍系統之濺鍍搶和被鍍物之間，且電連接至可變電 壓源，藉以在柵極裝置上產生與反應氣體正離子（如氬氣 正離子）等γ電離子相同極性之電壓準位，以便使得帶電 離子在通過栅極裝置後尚未撞擊被鍍物前，即因栅極裝置 的相同極f生電位所產生之排斥力而減緩速度，達到防止被 鍍物遭帶電離子撞擊而受損之目的。 〔發明内容〕 /為達上述目的，本案提出一種栅極裝置，係設於一濺 鍍系統之一濺鍍搶（Sputter )與一被鍍物之間，其特徵在 於該栅極裝置係電連接至一電壓源而具有一電壓準位'且 允許一帶電離子通過，並藉以調整該帶電 物之速度。 π電離子撞擊该被鍍 統 如所述之柵極裝置，係為一金屬網。 如所述之栅極裝置，其中該濺鍍系統為 一磁控濺鍍系 如所述之柵極裝置， 如所述之栅極裝置， 之可變電壓源。 如所述之栅極裝置， 出正電壓。 如所述之柵極裝置， 出負電麈。 如所述之栅極裝置， 其中該被鍍物^ 其中該電壓源係、 其中該可變電jg 其中該可變電 一晶圓基板。 為一電壓可調整 源可以被調整輸 源、可以被調整輸 之極性與該帶電 其中該電壓準值Page 4 12325203 V. Description of the invention (2) = High voltage of 300 ~ 100 000 ¥ is applied by the power supply 14 (DC power is used for the target material; RF AC power is used for the insulator), as follows: The field dissociates argon (Ar) into positive argon ions (Ar +) to form a plasma. The high energy argon positive ion (Ar +) produced will be the dry material 13 of the Qiaonan voltage cathode. Through the conversion of momentum, in addition to colliding the electric two electrons, the atoms of the target 13 will also be bombarded out. And splashing; a mineral film is formed on the substrate 15 such as the sun-dial substrate. The permanent magnet 122 in the figure is used to generate a magnetic field 123. In the sputtering process, about 70% of the energy system is converted into thermal energy loss, and only 20% of the energy system is used for sputtering. Therefore, the conventional sputtering system will add a group of magnets, that is, a long-term magnet, 22, which makes the electric field interact with the magnetic field, 23, so that the free electrons advance in a spiral path toward the anode (the shell 12 electrically connected to the high voltage anode). To increase the chance of the collision of free electrons with argon atoms (Ar), and to increase the probability of the formation of gas Λϋ (Ur +), the number of argon positive ions (Ar +) # hitting light material 13 can be doubled, which can increase the sputtering rate. However, in the process of f 2 爻, in addition to the argon positive ions (Ar +) being accelerated by the electric field and bombarding 13, they will also hit the plated object due to the radiation effect. As shown in the figure-the collision of the mineral 15 by the positive argon ions (Ar +) will cause the surface of the object 15 to be affected by #, which will greatly reduce the effect of the forged film by the mineral ... For light shots caused by charged ions It is necessary to prevent it. Purpose of this case] In order to meet the above requirements, this case is a concept of a gate device, which is set on page 5 12325203. V. Description of the invention (3) It is placed between the sputtering system and the object to be plated, and is electrically connected To a variable voltage source to generate a voltage level on the grid device with the same polarity as the γ electric ions such as positive gas ions (such as argon positive ions), so that the charged ions have not hit the plating after passing through the grid device. In front of the object, the speed is slowed down due to the repulsive force generated by the same electrode potential of the gate device, so as to prevent the object to be plated from being damaged by the impact of charged ions. [Summary of the Invention] / In order to achieve the above-mentioned object, the present invention proposes a gate device, which is located between a sputtering device (Sputter) and a substrate to be plated, and is characterized in that the gate device is electrically connected. It has a voltage level to a voltage source and allows a charged ion to pass through to adjust the speed of the charged object. The π-electron impacts the gate device as described, which is a metal mesh. The gate device as described, wherein the sputtering system is a variable voltage source of the magnetron sputtering system as described above, as described above. The gate device described above produces a positive voltage. The gate device described above generates a negative voltage. As described in the gate device, wherein the object to be plated ^ is the voltage source system, wherein the variable current is jg, and the variable current is a wafer substrate. A voltage-adjustable source can be adjusted the source, the polarity of the input can be adjusted and the charging
l2325〇3 五子%目同時，可減緩該帶電離子之速度。 離如所述之拇極裝置，其中該電壓準位之極性與該帶電 離子相反時’可增加該帶電離子之速度。 如所述之柵極裝置，其中該帶電離子為該濺鍍系統之 /反應氣體正離子。 如所述之柵極裝置，其中該反應氣體為氬氣（Ar)。 如所述之柵極裝置，其中該反應氣體正離子為氬氣正 離手（Ar+h 如所述之柵極裝置，其中該帶電離子為一游離電子。 如所述之柵極裝置，其中該帶電離子為一二次電子。 〔實施方式〕 請參見第二圖’為本案較佳實施例之栅極裝置的示意 圖。如圖所示，本案較佳實施例中係以金屬網2 1作為柵極 裝置。金屬網2 1電連接至可變電壓源2 2，而可變電壓源2 2 之電壓準位可調整，且調整範圍可以從正電壓至負電壓。 第三圖所示為柵極裝置在濺鍍系統中之動作示意圖。 作為柵極裝置的金屬網2 1係設於濺鍍槍1 2和被鍍物1 5 (如 晶圓基板）之間，且電連接至可變電壓源2 2。由於本案之 目的，乃係為了避免第三圖中，氬氣正離子（Ar+)等帶電離 子，因輻射撞擊被鍍物1 5而導致被鍍物1 5之損傷。因此， 可以調整可變電壓源2 2提供正電壓給金屬網2 1，使其具有 正電壓準位，讓通過金屬網2 1而射向被鍍物1 5的氩氣正離 子（A r +)，受到金屬網2 1之正電壓準位的排斥而減緩速度，At the same time, the rate of the charged ions can be slowed down. The thumb pole device as described above, wherein when the polarity of the voltage level is opposite to the charged ion ', the speed of the charged ion can be increased. The gate device as described above, wherein the charged ions are positive ions of the sputtering system / reactive gas. The gate device as described above, wherein the reaction gas is argon (Ar). The gate device as described above, wherein the positive ion of the reaction gas is argon positive off-hand (Ar + h) The gate device as described above, wherein the charged ion is a free electron. The gate device as described above, wherein The charged ions are primary and secondary electrons. [Embodiment] Please refer to the second figure 'a schematic diagram of a gate device according to a preferred embodiment of the present invention. As shown in the figure, a metal mesh 21 is used as the preferred embodiment of the present invention. Gate device. The metal grid 2 1 is electrically connected to the variable voltage source 22, and the voltage level of the variable voltage source 2 2 can be adjusted, and the adjustment range can be from positive voltage to negative voltage. The third figure shows the gate Schematic diagram of the electrode device in a sputtering system. A metal mesh 21 as a gate device is located between the sputtering gun 12 and the substrate 15 (such as a wafer substrate) and is electrically connected to a variable voltage. Source 2 2. Because the purpose of this case is to avoid the third figure, the charged ions such as argon positive ions (Ar +) caused damage to the plated material 15 due to the impact of radiation on the plated material 15. Therefore, you can Adjust the variable voltage source 2 2 to provide a positive voltage to the metal net 2 1 so that it has a positive voltage Level, so that the positive argon ions (A r +) of the argon gas which are directed to the plated object 15 through the metal mesh 21 are repelled by the positive voltage level of the metal mesh 21 and the speed is slowed down,
第7頁 1232503 五、發明說明（5) 進而減低被鍍物1 5遭受氬氣正離子（Ar +)撞擊之損傷。另 外，如欲減緩帶負電之電子（如游離電子、二次電子等） 撞擊被鍍物1 5的速度，則需調整可變電壓源2 2提供負電壓 給金屬網2 1，使其具有負電壓準位，讓通過金屬網2 1之電 子，受到金屬網2 1之負電壓準位的排斥而減緩速度。 綜上所述，本案係針對習用技術提出改善。為因應濺 鍍系統在濺鍍過程中，反應氣體正離子（如氬氣正離子） 等帶電離子，因為輻射效應而撞擊被鍍物1 5所造成之損 害，本案乃於濺鍍槍和被鍍物之間，設置了柵極裝置（如 金屬網），再將柵極裝置電連接至可變電壓源。而本案之 進步性在於，藉由在柵極裝置上產生與反應氣體正離子 (如氬氣正離子）等帶電離子相同極性之電壓準位，可以 讓帶電離子在通過柵極裝置後尚未撞擊被鍍物前，即因柵 極裝置的相同極性電位所產生之排斥力而減緩速度，進而 減少被鑛物受損之機會。 本案所揭露之技術，得由熟習本技術人士據以實施， 而其前所未有之作法亦具備專利性，爰依法提出專利之申 請。惟上述之實施例尚不足以涵蓋本案所欲保護之專利範 圍，因此，提出申請專利範圍如附。Page 7 1232503 V. Description of the invention (5) Further reduce the damage of the plated material 15 from the impact of argon positive ions (Ar +). In addition, if you want to slow down the speed of negatively charged electrons (such as free electrons, secondary electrons, etc.), it is necessary to adjust the variable voltage source 2 2 to provide a negative voltage to the metal net 21 to make it negative. The voltage level allows electrons passing through the metal net 21 to be repelled by the negative voltage level of the metal net 21 to slow down the speed. To sum up, this case is to improve the conventional technology. In order to respond to the damage caused by the radiation effect when the sputter system is charged with reactive ions (such as argon positive ions) and other charged ions, they are caused by the impact of the radiation on the plated objects. Between the objects, a gate device (such as a metal mesh) is provided, and the gate device is electrically connected to a variable voltage source. The progress of this case is that by generating a voltage level on the grid device with the same polarity as the charged ions such as positive gas ions (such as positive argon ions), the charged ions can pass through the grid device without being hit. Before plating, the repulsive force caused by the same polarity potential of the gate device slows down the speed, thereby reducing the chance of being damaged by the mineral. The technology disclosed in this case may be implemented by those skilled in the art, and its unprecedented approach is also patentable, and it is necessary to file a patent application in accordance with the law. However, the above embodiments are not enough to cover the scope of patents to be protected in this case. Therefore, the scope of application for patents is attached as follows.
1232503 圖式簡單說明 本案得藉由下列圖示及詳細說明，俾得一更深入之瞭 解： 第一圖：習知之濺鍍系統的示意圖 第二圖：本案較佳實施例之栅極裝置的示意圖 第三圖：栅極裝置在濺鍍系統中之動作示意圖 圖示主要元件之圖號如下： 1 1 :真空腔體（Chamber) 12:錢鍵槍（Sputtering Gun) 1 2 1 :外殼 1 2 2 :永久磁鐵 123:磁場 13 :靶材（Target) 14 : 電源供應 器（Power Supply) 15 ： 被鍵物 21 : 金屬網 2 2 :可變電壓源，1232503 Schematic illustrations This case can be obtained through the following diagrams and detailed descriptions to gain a deeper understanding: First picture: a schematic diagram of a conventional sputtering system Second picture: a schematic diagram of a gate device in a preferred embodiment of the case Figure 3: Schematic diagram of the action of the gate device in the sputtering system The drawing numbers of the main components are as follows: 1 1: Vacuum chamber 12: Sputtering Gun 1 2 1: Shell 1 2 2 : Permanent magnet 123: Magnetic field 13: Target 14: Power Supply 15: Key 21: Metal net 2 2: Variable voltage source,