TW201011913A - Lateral diffused metal oxide semiconductor device - Google Patents

Abstract

A lateral diffused metal oxide semiconductor (LDMOS) device is provided. The LDMOS device includes a substrate having a first conductive type, a deep well region having a second conductive type in the substrate, a buffer region in the deep well, a body region having the first conductive type in the buffer region, a source region having the second conductive type in the body region, a contact region having the first conductive type in the body region, a first lightly doped region having the second conductive type in the deep well region, a drain region having the second conductive type in the first lightly doped region, a channel region in a portion of the body region between the source region and the drain region, a gate structure covering the channel region and a portion of the buffer region and the second lightly doped region having the second conductive type between the source region and the channel region.

Description

〇 16 ltwf.doc/n 201011913 IX. Description of the Invention: TECHNICAL FIELD The present invention relates to a semiconductor element, and more particularly to a laterally diffused MOS device. [Prior Art] The lateral diffused metal oxide ❹ semiconductor (LDMOS) transistor has a high breakdown voltage and a low turn-on resistance (〇n_state resistance; Ron) during operation. Therefore, LDMOS transistors play an extremely important role in either a typical power supply integrated circuit or on a smart power integrated circuit. Early LDMOS transistors, due to their extremely high electric field and high and extreme currents, formed more hot electrons with higher energy to break through the gate dielectric, often resulting in loss of transistor lifetime. In order to improve the life of the transistor, a field oxide layer is usually formed between the drain and the gate to reduce the influence of the electric field. The formation of the field oxide layer causes an increase in the on-resistance and a decrease in the saturation current. Although increasing the dopant concentration of the drift region between the non-polar region and the channel region can reduce the on-resistance of the device, it can make the drift region not completely depleted, resulting in a drop in breakdown voltage. In order to overcome the above problems, an LDMOS transistor called a double reduced surface field (RESURF) structure has been developed, and the related content is referred to u s 卩舡 % 6, 〇 87, 232. Due to the lateral diffusion of the face-structure, the MOS semiconductor crystal 5 〇i61twf.doc/n 201011913 can make the deep well region where the source region and the bungee region are completely depleted during operation, so that the source region and the bungee region are between Forming a uniform electric field, the breakdown voltage of the component can be improved accordingly. Therefore, the LDM 〇s transistor of the RESURF structure has become the mainstream of the current LDMOS transistor. However, in addition to the LDM 〇s transistor of the RESURF structure, it is necessary to develop more kinds of MOSFETs to reduce the body electric field _k fidd) and the surface electric field, and to increase the breakdown voltage, so that the component has a surface electric field of a uniform sentence. Widely used laterally diffused gold-gas semiconductor components. SUMMARY OF THE INVENTION Embodiments of the present invention provide a laterally diffused MOS device and a method of fabricating the same. In accordance with an embodiment of the invention, a laterally diffused oxy-oxide semiconductor read is presented. The component includes a substrate having a first conductivity type, a deep well region of a second conductivity & a buffer region, a substrate region having a first conductivity type, a source region having a first conductivity type, and a contact having a first conductivity type a region, a conductivity-type first-hetero-depletion region, a second conductivity-type drain region, a channel region, a gate structure, and a second lightly doped region having a second conductivity type. Deep wells stand in the basement. The buffer zone is located in the deep well area. Base is located in the middle. The source region is located in the base region. The contact zone is located in the base zone. The doped zone cake is in the deep well zone. The secret zone is located in the first light-doped zone. The channel area is located in the source area and the secret area of the county. _ ^ area and partial buffer. The second lightly doped region is located in the source region and the channel 6 201011913 5i6ltwf.doc/n - in accordance with the present invention, a method of manufacturing a "hybrid body" is proposed. First, in the first lightly doped region having the first conductivity type second conductivity type. Formed with zones. Then, a first gate structure is formed in the buffer region, and a body gate region covered by the _ ς e is defined as a channel region. Then, in the base region, the shape is 1; the second light doping with the J-first conductivity type, and the second light doping after the bar, and the first and the second (four) are divided into the !==; Thereafter, a laterally diffused MOS device having the first embodiment of the present invention is formed in the substrate region, which reduces the body electric field and the surface electric field when the device is turned off, and raises the element (4) breakdown voltage. [Embodiment] ❹Transversely diffused gold gas conductor opening member Fig. 1 is a cross-sectional view and a partial top view of a laterally diffused MOS device as shown in the recording (four)-embodiment. Referring to FIG. 1, a laterally diffused MOS device includes a substrate 100 having a first conductivity type, a deep well region 2 having a second conductivity type, a gate structure 150, and a source region 142 having a second conductivity type. a drain region 144 having a second conductivity type, a contact region 146 having a first conductivity type, a lightly doped region 118 having a second conductivity type, a buffer region 124, and a substrate having a first conductivity type 7 6i61twf.doc/ n 201011913 region 134, lightly doped region 136 having a second conductivity type, and channel region 148. The first conductivity type may be a P type or an N type, and when the first conductivity type is a p type, the second conductivity type is an N type. When the first conductivity type is an N type, the second conductivity type is a P type. For convenience of explanation, the first conductivity type is denoted by P type and the second conductivity type by N type.

The P-type substrate 100 can be a germanium substrate or other semiconductor substrate. The N-type deep well region 102 is located in the P-type substrate 1〇〇. The buffer zone is located in the depth of 1〇2. The P-type base region 134 is located in the buffer region 124. The N-type source region 142 is located in the P-type base region 134_. P-type contact region 146 is located in substrate region 134. The N-type lightly doped region 118 is located in the deep well region 102. The n-type drain region M4 is located in the N-type lightly doped region 118. Channel region 148 is located in a portion of base region 134 between source region 142 and/or pole region 144. The gate structure bo covers the channel region 148 and a portion of the buffer region 124. The N lightly doped region 136 is located between the source region 142 and the channel region 148. The aforementioned buffer zone 124 is disposed between the junction of the P-type base region 134 and the 1^-type deep well region 102. In other words, the buffer region 124 is disposed in the n-type deep region 102 with the p-type base region 134 located therein. The buffer region 124 may be all undoped regions (for example, may be so-called i-layers), P-type ultra-dilute doped regions (··π(6) or N-type ultra-dark regions (so-called v-layers). The ultra-light doped zone refers to the doping concentration of the n-type n-type matrix region m and the n-type deep well region, and the range of * can be between 0 and 1X1017W. The undoped region may be such that the N-type smear in the region is exactly equal to the concentration of the P-type dopant, and the N-type doped f#p-type ς ς ς 8 61 twf.doc/n 201011913 It is undoped. When the buffer region 124 is a p-type super-dilute doped region, its p-type dopant concentration is substantially lower than the dopant concentration of the p-type matrix region 丨34. When the buffer region 124 is N-type super-diffusion In the heterogeneous zone, the doping concentration is substantially lower than the doping concentration of 1〇2 in the N-type deep well zone. The presence of the buffer zone 124 can make the width of the depletion zone formed during the operation of the component. 48+ simple area m) wider than the conventional (no buffer 124) gap between the P-type base area 134 and the N-type deep well area 1〇2

The width of ^. In this way, the surface electric field and the electric field can be reduced, so that the breakdown voltage of the element is greatly increased. — u 疋坌 Shao is an undoped region, P-type ultra-diffused super-dilute doped region, or can be an undoped region,? A combination of ultra-light doped areas or N-type super-light-mixed ships. Referring to FIG. 2 'in another embodiment, the buffer region 124 is composed of a plurality of p = lightly doped regions 124a and a plurality of pre-type super-returns - implicitly arranged mb ship-like regions ma and respective N-wet-doped regions are torn. The direction of extension is the same as the length L of the channel 148. In the buffer region 124, the P-type super-dilute doping region 2 region m of the doped coffee type super-dilute doping region = the mass density is lower than the doping concentration of the Ν-type deep well region 102.穋 = according to Figure 3 'in another embodiment: except ~ ^ type super-dilute doped area _: === body area gin concentration is between P-type ultra-dilute doped area and " 〇161twf.doc/ n 201011913 The lateral diffusion gold = punching area 124 shown in the embodiment of FIG. 2 and FIG. 3, except that the element can be operated, the == outer ' can also pass through the alternately disposed p-type super-dilute areas ma and N. The light is purely doped (10) to make the distribution of the electric field more uniform. Thus, the breakdown voltage of the element can be greatly and uniformly increased. Referring again to FIGS. 1 to 3, the laterally diffused MOS device can include the isolation structure 110a. , _ and 11Ge, used to define the active area. The isolation structure ll 〇 a covers part of the deep well area 1 () 2, the base area m, the buffer area 124 and the substrate 100. Isolation structure! Survey part of the deep well area 1 〇 2 The dummy structure 118. The isolation structure 110c covers a part of the deep well area 1, 2, and the base area (10) and the base layer. The area between the isolation structure 11() a and the isolation structure is defined as the active area 112a; The area between the 11Gb and the isolation structure is defined as the active area 112b. In addition to the active area, the isolation structure 11Gb can also be reduced. Effect ㊣144 material, lifting element

FIG. 4A to FIG. 4G are schematic cross-sectional views showing a process of manufacturing a laterally diffused MOS device according to an embodiment of the present invention. Referring to FIG. 4A, a deep well region 1〇2 is formed in the substrate 1〇〇. The substrate 1〇〇 is, for example, a P-type substrate; the deep well region 1〇2 is, for example, a deep well region. The deep well region 102 can be formed by an ion implantation process, such as implanting ions such as phosphorus; the implant dose is, for example, lx10i2 to 4xl〇12/cm2; and the implantation energy is, for example, 150 to 180 KeV. Next, a mask layer 1〇4 is formed on the substrate 100 to expose a predetermined shape. 6ltwf.d〇c/n

Thereafter, referring to FIG. 4C, the photoresist layer 114 is removed. Then, another layer of the photoresist layer 12G is formed, and the opening 122 is formed by the process. The opening 122 exposes a portion of the active area 112a. Then, an ion implantation process is performed to form a buffer 124 in the active core of the opening 122. The ion implanted in the ion implantation process is p-type, for example, deleted; the implantation energy is, for example, 160 to 200 KeV. The implant dose is related to the conductivity type of the buffer 124. When the buffer 124 to be formed is an undoped region, the implanted p-type ion must be substantially equivalent to the N-type ionic age implanted in the N-type deep well region 1,2, Qian Chiren The p _ sub-time fully compensates for the N-type ions of the deep well region 102 there, so that the final buffer 124 is undoped. 201011913 The area of 冓. The mask layer is, for example, composed of a layer of tantalum nitride 108. /, then 'please refer to FIG. 4B to perform a local thermal oxidation process to remove the mask layer 1G4 after forming the isolation structures u〇a, u〇b, u〇c in the exposed area of the mask layer. The active region 112a between the isolation structures UGA, lU)b and the active region (10) between the isolation structures η%, 11〇c. Next, light _114 is formed, and the lithography process forms an opening 16' to expose the active region U2b. Then, an ion implantation process is performed to form an N-type dimming region 118 in the active region 112b exposed by the opening 116. The ion implanted in the ion implantation process is, for example, a lin; the implantation dose is, for example, 2x1012 to lxl 〇 13/cm 2 ; and the implantation energy is, for example, 200 to 250 keV. When the buffer 124 to be formed is a p-type super-dilute doped region, the dose of the implanted P-type ions must be slightly larger than the dose of 1〇2 in the deep well region, so that the implanted The incoming P-type ions completely compensate for the ^^-type ions in the deep well area of the place, and leave a small amount of uncompensated P-type ions, so that the most line-punching area 124 exhibits P-type ultra-light doping. The implant dose is, for example, 2 <1〇12~8xl〇12/cm2 〇 Conversely, when the buffer 124 is an N-type super-dilute doped region, the dose of the implanted P-type ions must be less than >1 a dose of 1〇2 in the deep well zone such that some of the \-type ions in the deep well zone 102 are compensated by the implanted p-type ions, and still leave a small amount of uncompensated N-type ions, so that the final Buffer 124 exhibits an N-type ultra-light doping. The buffer 124 formed by Lu Ruo is formed by a plurality of P-type super-dilute doped regions and a plurality of N-type super-dilute doped regions alternately arranged as shown in FIG. 2, which may be regarded as The method, the pattern of the healthy level and the change of the ion implantation conditions can be formed. More specifically, a first photoresist layer (not shown) may be formed on the substrate ι〇〇j. The first photoresist layer has a plurality of first openings, and the exposed regions are formed to form a P-type ultra-dilute doped region 12, such as a region, to form a P-type super-dilute doped region, and the method is used to make the flaws completely And formed by a p-type separation process slightly larger than the implantation dose of the 1〇2iN type ion in the deep well area. Thereafter, the first photoresist layer is removed, and a second photoresist layer (not shown) is further removed. The second photoresist layer has a plurality of second openings exposing a region where the N-type super-dilute doping region 124b is formed, and the second method of forming the N-type super-dark doped region is used, and the method is slightly smaller than The p-type ion implantation mileage of the N-type implant implanted in the area is formed. 12 «16ltwf.doc/n 201011913 - When the diffused MOS device further includes the first (Fig. 3), after the photoresist layer 12 is removed, the patterned dielectric layer is formed before the gate dielectric layer 126 is formed. The photoresist layer I is made of micro-f彡. Next, the rider is implanted in the buffer m to form a third ultra-light doped region 125. The ion implantation ion is p-type, for example, rotten; the implantation energy is, for example, 12 〇 to (10) KeV, and the implantation dose is, for example, 8 x l 〇 u 〜 2 x l 〇 U / cm 2 . after that,

The patterned photoresist layer 127 is removed. Thereafter, the photoresist layer 12 is removed by referring to FIG. 4D. A gate dielectric layer 126 and a gate 128 of the entire layer are then formed over the substrate. The material of the gate dielectric layer 126 is, for example, a gas-cutting method. For example, the method of thermal oxidation: the gate, 128 is made of, for example, doped poly. The method of formation is, for example, chemical vapor deposition. Thereafter, a photoresist layer 13 is formed on the gate 128, and an opening σ 132 is formed by a lithography process to expose a portion of the gate 128 of the upper portion of the buffer m. Next, the gate 128 exposed by the opening 132 is returned by, for example, a last name, and the gate oxide layer 126 is removed from the bottom of the impurity. Next, an ion implantation process is performed, followed by tempering to form a P-type body region 134 in the buffer region 124. The ions implanted in the ion implantation process are p-type, for example, boron; the implantation energy is, for example, 11 〇 15 15 〇 KeV; and the implantation dose is, for example, lxlO13~6xl〇13/em2. Thereafter, referring to Fig. 4, the residual photoresist layer 13 is removed, and the entire gate 丨 28 is again patterned by another micro-shirt and rhyme process to form the idler 128. The n-type ion implantation 13 201011913 - process is then performed with the gate mg as a mask to form an N-type lightly doped region 136 in the P-type body region 134. The ions implanted in the N-type ion implantation process are, for example, filled or otherwise; the implantation energy is, for example, 30 to 60 KeV; and the implantation dose is, for example, 2 x 1 〇 i 2 to 8 x 1 〇 i 2 / cm 2 .

Thereafter, referring to FIG. 4F, a spacer 138 is formed on the sidewall of the gate 128. The spacer 138 is formed by, for example, forming a layer of spacer material first, and then performing an anisotropic etching process. The gate dielectric layer 128 that is not covered by the gate 128 and the spacers 138 will be removed during the anisotropic etching process, or subsequent cleaning process. Then, a photoresist layer 14A is formed over the substrate 1A. Next, an N-type ion implanted county is performed to form an N-type source region 142 in the p-type base region 134, and an N-type non-polar region 144 is formed in the N-type doped region 118. The ions implanted in the N-type ion implantation process are, for example, scales or gods; the implantation energy is, for example, 50 to 65 KeV; and the implantation dose is, for example, 2 x l 〇 5 to 5 χ 1 〇 = / cm 2 . Thereafter, referring to FIG. 4G, the photoresist layer 14 is removed, and then a P-type contact region is formed in the p-type base region I34. The method of forming a p-type contact region can form a method of forming a doped region, which is not described above. In the above embodiment, LDNM〇s is used for explanation. However, this method does not This is limited. The present invention can also be applied to LDpM〇s, and it is only necessary to change the above-mentioned conductivity type. Moreover, it is said that LDmos only needs to change the conductivity type of the above (3) leg (10) into a type of impurity region, a lightly doped region, and a super-diffusion pure change to a conductivity type of p-sub-region, light-doped region, and neo-doped region; The conductivity type is p-type, 7 is lightly doped, and 11 is super-returned. The county is N-type heterogeneous 14 u i61twf.doc/n 201011913 area, lightly doped area, ultra-lightly doped area.

In summary, the method for fabricating the laterally diffused gold-oxygen semiconductor device according to the embodiment of the present invention is simple and can be integrated with existing processes. In addition, the laterally diffused MOS device according to the embodiment of the present invention can reduce the body electric field and the surface electric field at the same time, and improve the breakdown electric power. In addition, the laterally diffused MOS device according to the embodiment of the present invention may also have a uniform surface electric field during operation to uniformly distribute the potential to increase the breakdown voltage. Since the lateral diffusion of the laterally diffused MOS device of the present invention has a large increase in the breakdown voltage of the achievable component, it can be used as a high voltage component. Although the present invention has been disclosed in the above embodiments, it is not intended to limit the skill of the present invention. Without departing from the spirit of the present invention, Fan Dongtian may make some changes and refinements. This is subject to the definition of the scope of the patent application attached. BRIEF DESCRIPTION OF THE DRAWINGS The oxygen half is = the present invention - the implementation - the lateral cross-diffusion gold conductor 70 section and partial top view. Whole oxygen: 2 is a cross-sectional view and a partial top view of a laterally diffused gold oxide + conductor according to another embodiment of the invention. Gold Oxygen Show - Seed _^

Bi61twf.doc/n 201011913 [Description of main component symbols] 100: Substrate 124b: N-type super-dilute doping region 102: deep well region 126 Gate dielectric layer 104: mask layer 128 Gate 106: pad oxide layer 134 substrate region 108 : tantalum nitride layer 136 lightly doped regions 110a, 110b, 110c: isolation structure 138 spacers 112a, 112b: active region 142 source regions 114, 127, 130, 140: photoresist layer 144 non-polar regions 116, 122, m, 132: opening 146 contact region 118: lightly doped region 150: gate structure 124: buffer region 124a, 125: P-type super-damp-doped region

16

Claims (1)

161twf.doc/n 201011913 Patent Application Range: 1. A laterally diffused money semiconductor component comprising: a substrate having a first conductivity type; a deep well region of a second U-v type, located in the substrate; , in the deep well region; having the first conductivity type - the main and base regions are located in the buffer; having the second conductivity type _,, β + ί: Ι _ φ ❹, the source region Located in the base region; a 4 Λ Ag r-contact region having the first conductivity type is located in the base region; and a first lightly doped region having the second conductivity type 筮r- is located in the deep well The region has the second conductivity type-secret region, and is located in the first-light doped 9-base region, the middle channel region, the portion of the gambling, the polar region, and the new (four) 1 - the gate structure covers the channel region and the portion a job area; and a second lightly doped region having the second conductivity type and the channel region < 2· The special recording of the 丨 围 横向 横向 横向 横向 横向 横向 横向 横向 横向 横向 横向 横向 横向 横向 横向 横向 横向 横向 横向 横向 横向3. The lateral diffuser element according to claim i, wherein the towel is a doped region having the first conductivity type, and the dopant concentration is lower than the dopant concentration of the substrate region. / Canine 4. * Towels please refer to the lateral diffusion gold oxide 7L piece mentioned in the third item, wherein the buffer zone has one of the second conductivity types, Le Yi Chao 17 -»161twf.doc/n 201011913 The doped region has a dopant concentration lower than the dopant concentration of the deep well region. 5. The laterally diffused oxy-half half element of claim 1, wherein the buffer zone comprises a plurality of first, lightly doped regions having the first conductivity type and having the second conductivity type The plurality of second ultra-light doped regions are alternately arranged to form a direction in which the first-super-dilute doped regions and the second ultra-dark regions extend substantially parallel to the extending direction of the length of the channel. " m ―6· as disclosed in claim 5, the laterally diffused gold oxide element 'where the first ultra-light doped region has a higher concentration of the dopant than the dopant concentration of the region' The dopant concentration of the second ultra-light doped region is lower than the dopant concentration of the well region. _ Ice 7· % f Please use the lateral diffusion gold described in item 6 of Weiwei to include a third-lightly doped region having a first conductivity type: between the substrate region and the buffer zone. 8. The lateral body of claim 7, wherein the dopant concentration of the third ultra-light doped region is between the dopant concentration of the hetero region and the dopant concentration of the substrate region. The younger than the yuan ^ towel material job 帛 1 item of the touch of gold and oxygen semi-conducting conductive county, the second conductivity type is n-type. ^^Occupation of gold oxide semi-conducting u: The two-conductor type is the p-type body element of the second conductivity type, and further includes the lateral diffusion material of the = structure = a first part, covering Part of the deep well area is partly ugly; and I "money and 18 »i61twf.doc/n 201011913 are not one, still connected to the 汲 nuclear well area and part of the first - lightly doped area. ° ° side' The cover portion is deep 12. As claimed in the patent scope, the conductor member, wherein the isolation junction, the lateral diffusion of the gold oxide half =: between the source regions is overlying the doped region. Part of the _ body element, the lateral diffusion MOS and the deep well === _ between the body elements of the miscellaneous area, the lion diffusion metal oxy-transductor described in the first item The doping of the base region is lower than the dopant of the source region: a manufacturing method of 5' laterally diffused MOS devices, a inclusion region; and one of the first conductivity types of the electric well region Forming a second guide in the base; forming a buffer-forming medium in the deep well region having the second conductivity type formed in the deep well region; a base region having the first conductivity type is formed in the punching zone; a portion of the base region and the buffer region form a gate structure, and the gate covered by the gate structure is a quaint (four) 4 channel region; · a miscellaneous region, 1 Forming, in the base region, a second light doping of the second conductivity type, °°, /, wherein the second lightly doped region is adjacent to the channel region; 19 201011913. I61twf.doc/n in the base region a light-doped region in which a source-dipole region and a drain region are respectively formed; and wherein the layer is formed in the substrate region and has a cross-section as described in claim 15 of the first conductivity type 1 body=piece manufacturing method, wherein the well region and the buffer oxygen half first ion implantation process and the second ion implantation process are made:, to - 17. as claimed in claim 16 The manufacturing method of the conductor element, the towel, the "degree expansion of the gold oxide semi-conducting type ion, the agent = two-off = the process implant has the process implanted with the first-guided Lei Xiang Xiang Tian in 5 Haidi An ion implanted in the buffer is a dose that is free of ionic ions, making the final 18. If applying for a patent A method of fabricating a range of conductor elements, wherein the reading of the gold, the ion implanted with the second conductive fission implanted in the conductive type is substantially inclusive of the dopant concentration of the region. ... ζ π Μ is lower than the buffer of the base ΐ 2 2, the buffer has a low dopant concentration, and the transverse diffusion oxy-semi-wei method described in item 16 of the conductor range The process implant has a dose implanted with the first ion implanted with the first ion implanted to form a first buffer zone, and the dopant concentration of the region is lower than the deep well region 20