201009897 九、發明說明： 【發明所屬之技術領域】 本發明係關於半導體晶片製造方法，特別是關於一種在爐管中沉積多 晶梦的方法。 【先前技術】 參見附圖1，在爐管中沉積多晶矽的傳統方法為：首先，在常壓和第 一溫度下用晶舟將晶片送到爐管内，然後，在一預定壓力和第二溫度下沉 • 積多晶矽薄膜，最後，在常壓和第三溫度下將晶片從爐管内拿出來。根據 製程的需要，第一溫度和第三溫度可以相同，也可以不同。這種方法產生 的問題是：當爐管在高溫、低壓的情況下沉積多晶矽薄膜的時候，由於溫 度和壓力的同時變化容易造成沉積在爐管内壁上的薄膜剝落而產生微粒 (如圖2所示），造成晶片的污染，進而影響產品的良率。 【發明内容】 針對現有技術中的缺陷，本發明的目的是提出一種在爐管中沉積多晶 φ 矽的方法，該方法能夠較佳地避免溫度和壓力同時變化造成爐管内壁上的 薄膜變脆而剝落的問題。 為了達到本發明的上述和其他目的，根據本發明的在爐管中沉積多晶 矽的方法採用包括如下步驟的技術方案：步驟一，在常壓和第一預定溫度 下將晶片送入爐管内；步驟二，在一預定壓力和上述第一預定溫度下沉積 多晶矽薄膜；步驟三，在常壓和第二預定溫度下將晶片從爐管中取出。 較佳地，上述第一預定溫度高於第二預定溫度。 201009897 較佳地’上述第一預定溫度為540-600°C，第二預定溫度為35〇_45〇〇Ce 較佳地’上述預定壓力的值為18-30帕。 採用本發明的技術方案，並未改變多晶矽薄骐沉積時的溫度、壓力和 薄膜沉積後到晶片拿出爐管前爐管内的溫度，因此可以保證多晶矽沉積時 的熱量預算和薄膜的品質不受影響；通過改變晶片在進入爐管時的溫度使 其與多晶矽薄膜沉積時的溫度相同，可以避免溫度和壓力同時變化造成的 爐管内壁上的薄膜剝落的問題，進而提高產品的良率。 【實施方式】 下面結合附圖對本發明的具體實施方式作更詳細的描述。 參見圖3，一種在爐管中沉積多晶矽的方法，包括：步驟一，在常壓和第一 預定溫度下將晶片送到爐管内；步驟二，在一預定壓力和上述第一預定溫 度下沉積多晶矽薄膜；步驟三，在常壓和第二預定溫度下將晶片從爐管中 拿出。 ® 上述步驟一與步驟二中的第一預定溫度為多晶矽薄膜的沉積溫度，該 溫度高於步驟三中的第二預定溫度，較佳地，第一預定溫度為540_600〇c， 第二預定溫度為350-450°C’最好是4〇〇。(：；步驟二中的預定壓力是指多晶 矽薄膜沉積時的壓力，該壓力的數值範圍為18_3〇帕。 娜歹丨J 1 一種在爐管中沉積多晶矽的方法，包括如下步驟：步驟一，在常壓和 540°C溫度下，用晶舟將晶片送入爐管内；步驟二，在18帕的氣壓條件和 201009897 默溫度下，沉積多晶矽薄臈;步驟三’在常壓和35〇〇c溫度下將晶片從 爐管中取出" 實施例2 -種在爐管中沉積多轉的方法，包括如下步驟：步驟―，在常跡 600°C溫度下’用晶舟將晶片送人爐管内；步驟二，在3()帕的氣壓條件和 6·溫度下’沉積多晶石夕薄膜；步驟三，在常壓和45〇〇c溫度下將晶片從 爐管中取出。 ❹ 實施例3 -種在爐管中沉積多asa⑪的方法’包括如下步驟：步驟―，在常廢和 570。(：溫度下，用晶舟將晶片送人爐管内；步驟二，在％⑽氣祕件和 570 C'皿度下’沉積多曰日碎薄膜，步驟三，在常壓和4〇〇〇c溫度下將晶片從 爐管中取出。 採用本發明的方法所產生的有益效果是：在將晶片送到爐管内時，由於使 參該狐度與多晶石夕薄膜沉積時的溫度一致，因此爐管内壁的溫度和壓力不會 在多晶妙薄膜沉積時發生變化，避免了齡内壁薄翻落的問題。 以上描述了本發明的較佳實施例及其效果，當然，本發明還可有其他 實施例’在不背離本發明之精神及實質的情況下，所屬技術領域的技術人 員當可娜本發_&各_應驗變和變形，但這些減狀變和變形 都應屬於本發明的權利要求的保護範圍。 201009897 【圖式簡單說明】 圖1為在爐管中沉積多晶矽的傳統方法的示意圖； 圖2為在爐管中使用沉積多晶矽的傳統方法產生微粒的效果示意圖 圖3為根據本發明的一種在爐管中沉積多晶矽的方法示意圖。 【主要元件符號說明】201009897 IX. Description of the Invention: TECHNICAL FIELD OF THE INVENTION The present invention relates to a method of fabricating a semiconductor wafer, and more particularly to a method of depositing a polycrystalline dream in a furnace tube. [Prior Art] Referring to Figure 1, the conventional method of depositing polycrystalline germanium in a furnace tube is as follows: first, the wafer is sent to the furnace tube at a normal pressure and a first temperature, and then, at a predetermined pressure and a second temperature. Sinking • Polycrystalline silicon film, finally, the wafer is taken out of the furnace tube at normal pressure and third temperature. The first temperature and the third temperature may be the same or different depending on the needs of the process. The problem caused by this method is that when the polycrystalline tantalum film is deposited under high temperature and low pressure, the film and the pressure on the inner wall of the furnace tube are easily peeled off to generate particles (see Figure 2). Show), causing contamination of the wafer, which in turn affects the yield of the product. SUMMARY OF THE INVENTION In view of the deficiencies in the prior art, the object of the present invention is to provide a method for depositing polycrystalline φ 在 in a furnace tube, which can preferably avoid simultaneous changes in temperature and pressure to cause film deformation on the inner wall of the furnace tube. Brittle and peeling problems. In order to achieve the above and other objects of the present invention, a method of depositing polycrystalline germanium in a furnace tube according to the present invention employs a technical solution comprising the steps of: step 1 of feeding a wafer into a furnace tube at a normal pressure and a first predetermined temperature; Second, depositing a polysilicon film at a predetermined pressure and the first predetermined temperature; and in step 3, removing the wafer from the furnace tube at a normal pressure and a second predetermined temperature. Preferably, the first predetermined temperature is higher than the second predetermined temperature. 201009897 Preferably, the first predetermined temperature is 540-600 ° C, and the second predetermined temperature is 35 〇 _45 〇〇 Ce. Preferably, the value of the predetermined pressure is 18-30 Pa. By adopting the technical scheme of the invention, the temperature, the pressure during the deposition of the polycrystalline silicon germanium and the temperature in the furnace tube before the film is taken out to the furnace tube are not changed, so that the heat budget and the quality of the film during the deposition of the polycrystalline germanium can be ensured. By changing the temperature of the wafer when entering the furnace tube to be the same as the temperature at which the polycrystalline silicon film is deposited, the problem of film peeling on the inner wall of the furnace tube caused by simultaneous changes in temperature and pressure can be avoided, thereby improving the yield of the product. [Embodiment] Hereinafter, specific embodiments of the present invention will be described in more detail with reference to the accompanying drawings. Referring to FIG. 3, a method for depositing polycrystalline germanium in a furnace tube includes the steps of: sending a wafer to a furnace tube at a normal pressure and a first predetermined temperature; and second, depositing at a predetermined pressure and the first predetermined temperature. The polycrystalline germanium film; in step three, the wafer is taken out of the furnace tube at normal pressure and a second predetermined temperature. The first predetermined temperature in the first step and the second step is the deposition temperature of the polysilicon film, which is higher than the second predetermined temperature in the third step. Preferably, the first predetermined temperature is 540_600 〇c, the second predetermined temperature. It is preferably 4 〇〇 for 350-450 °C. (:; The predetermined pressure in the second step refers to the pressure at the time of deposition of the polycrystalline silicon film, and the value of the pressure ranges from 18 to 3 kPa. Na 歹丨 J 1 A method for depositing polycrystalline germanium in a furnace tube, comprising the following steps: Step one, The wafer is fed into the furnace tube at a normal pressure and a temperature of 540 ° C; in step two, a polycrystalline tantalum crucible is deposited under a gas pressure condition of 18 Pa and a temperature of 201009897; Step 3 'at atmospheric pressure and 35 Torr. The wafer is taken out from the furnace tube at a temperature of " Example 2 - a method of depositing multiple turns in a furnace tube, comprising the following steps: Step -, at a temperature of 600 ° C, the wafer is sent by a wafer boat In the furnace tube; in step 2, the polycrystalline stone film is deposited at a pressure of 3 () Pa and at a temperature of 6 °; in step 3, the wafer is taken out from the furnace tube at a normal pressure and a temperature of 45 ° C. 实施Example 3 - A method of depositing multiple asa 11 in a furnace tube 'includes the following steps: Step --, in the usual waste and 570. (: At a temperature, the wafer is sent to the furnace tube by a boat; Step 2, at % (10) Pieces and 570 C's under the degree of 'deposited 曰 碎 薄膜, step three, in The wafer is taken out of the furnace tube at a pressure of 4 〇〇〇c. The beneficial effect produced by the method of the invention is that when the wafer is sent into the furnace tube, the fox and the polycrystalline film are formed. The temperature at the time of deposition is uniform, so the temperature and pressure of the inner wall of the furnace tube are not changed during the deposition of the polycrystalline film, and the problem of thin falling of the inner wall is avoided. The preferred embodiment of the present invention and the effects thereof are described above. Of course, the present invention may have other embodiments without departing from the spirit and scope of the invention, and those skilled in the art will recognize and change, but these variations will be changed. And the deformations are all within the scope of the claims of the present invention. 201009897 [Simplified Schematic] FIG. 1 is a schematic view of a conventional method of depositing polycrystalline germanium in a furnace tube; FIG. 2 is a conventional method for depositing polycrystalline germanium in a furnace tube. Schematic diagram of the effect of the microparticles Fig. 3 is a schematic view showing a method of depositing polycrystalline germanium in a furnace tube according to the present invention.
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