201002499 九、發明說明： 【發明所屬之技術領域】 ' 本發明涉及一種模仁及其製作方法，尤其涉及一種用 • 於成型微型光學元件之模仁及其製作方法。 【先前技術】 目前應用於手機鏡頭模組中之光學元件，例如透鏡等 大都採用射出成型方式來製作。而手機設計均以輕薄短小 為設計目標，其要求手機鏡頭模組中之各光學元件之厚度 降低，整體厚度及尺寸大小要求亦越來越苛刻。微形光學 元件亦逐漸進入奈米尺度，具體可參見Jian Jim Wang於the 14th Annual Wireless and Optical Communications Conference (April 22-23，2005)上發表之 “Redefine Optical Device ’ s Integration and Manufacturing through Nano-Engineering” 一文。 然而當微形光學元件逐漸趨向奈米尺度時，製作尺寸 匹配之模具變得越來越困難。雖然業界亦發展出一些替代 性技術來製作微形透鏡，例如，光阻熱回流法，灰度光罩 法等。然而這些方法效率遠不能達到實用階段，且其成本 亦居rfj不下。 【發明内容】 以下將以實施例說明一種可用於成型微形光學元件且 易於加工之模仁及其製作方法。 6 201002499 種权仁’其包括：-層基材，複數分佈於該基材一 表面且相互離之觸媒層圖形，該觸媒層圖形具有預定形 狀之外表面’ _媒層外表面以無電敎方法形成有其外 表面與該魏層外表面形狀相同之成型部，該觸媒層對該 成型部之無電鍍步驟具有催化作用。 一種製作模仁之方法，其包括：提供-層基材；於該 基材上形成-層觸制；圖案化該觸媒層以形成複數相互 分離之觸㈣圖形；於該觸媒層圖形上形成預定形狀之外 表面；及制無電鑛之方法於該複數具有預定形狀外表面 上生長金屬層以得到模仁。 該模仁及其製作方法中，首先得到具有預定形狀外表 面之觸媒層’接著於觸媒層外表面上採用無電艘之方法生 長金屬層以得到具有預定形狀之模仁，其可充分利用微影 法之高解析度以及無電鑛製程之低本，可快速、精確製作 適用於微型光學元件成型之模仁。 【實施方式】 請參閱圖1與圖2,本技術方案提供之模仁製作方法包 括以下步驟： 。步驟1，提供一基材10。本實施例中基材10選用矽晶 圓’其厚度可介於20微米到500微米之間，直徑'介於1〇〇 釐米至300釐米之間。基材1〇之材質並無特殊限制，其對 相應之無電鑛不具有催化作用且可經受無電鍍溶液之腐敍 即可。例如’如果要製作鎳材質之模仁，基材1〇對鎳之無 7 201002499 電鍍溶液不具有催化作用且不與該無電鍍溶液反應，因此 當基材忉置於鎳之無電鍍溶液中時基材10表面沒有鎳層 沉積。 為提高製程良率及最終所得模仁之品質，矽晶圓一般 要經過清洗製程。例如採用各種高純度之化學溶液進行^ f化學清洗（Wet Chemical cieaning)，當然各種更加先進之 清洗製程技術，如乾洗製程技術（Dry Clean)，氣相清洗製 程技術（Vapor Cleaning Process)等均可用於清洗矽晶圓。 步驟2,於基材10之一表面上形成觸媒層2〇。觸媒層 2〇之厚度可介於〇.5微米到1〇微米之間。本實施例中，^ 媒層20為錄鑛層，其厚度為1微米，觸媒層20可採用電 子束蒸鍍之方法形成。為了提高觸媒層2〇與基材ι〇之間 之結合力，於形成觸媒層2〇之前，還可於基材1〇表面蒸 鍍-層中間層22,中間層22可為鉻制，其厚度可介= 〇.1微米到5微米之間，本實施例中其厚度為〇 2微米。可 理解，通過靶材之切換，鉻鍍層22與觸媒層2〇可於同— 蒸鍍裝置_生長，即首先遮蔽生長觸媒層20之靶材以沉積 中間層22,接下來遮蔽生長中間層22之靶材以於 U上沉積觸媒層2G。除了電子束錢，其他合適之製^ 術例如濺鍍同樣可用來生長中間層22與觸媒層2〇。 步=3，圖案化觸媒層2〇以形成複數觸媒層圖形μ。 ^本實施例中，觸媒層圖形24採用微影法製作。請參閱 圖2，百先，於觸媒層2〇表面塗佈光阻層3〇。光阻層 可採用刷塗或者旋塗之方法形成於觸媒層20表面。為θ了加 8 201002499 速光阻層30中之溶劑揮發，於塗佈完成後還可進行一軟 步驟。具體地，可將基材1〇放於9〇到1〇〇攝氏度之力^熱 板上或烤箱中加熱1分鐘左右。 其次，採用光罩40對光阻層30進行曝光處理。光罩 40中形成有複數通孔42。為了提高曝光之解析度，曝光時 可採用波長較短之紫外光。紫外光穿過光罩4〇中之通孔C 而使光阻層30中相應之部分發生光致化學反應而分解（對 應於正光阻）或交聯（對應於負光阻）。 曝光之後對光阻層30進行顯影處理，本實施例中採用 之是正光阻’因此被紫外光照射之部分被移除從而形成圖 案化之光阻層32。 顯影之後，對圖案化之光阻層32進行硬烤（取比 Baking)以增加光阻層32之厚度以及抗腐蝕能力，從而有 利於後續之蝕刻製程。具體地，可將基材1〇置於12〇攝氏 度之加熱板（Hot Plate)上或烤箱中加熱2分鐘左右。經 過硬烤後，光阻層32中之樹脂成份完全硬化。 接著分別採用不同之蝕刻液先後蝕刻觸媒層2〇與中間 層22’觸媒層20以及中間層22中被光阻層32保護之部分 保留下來而其餘之部分被侧掉。本實施例中，觸媒層加 對過蝕刻之後形成複數觸媒層圖形2〇a，中間層經過蝕刻之 後形成複數中間層圖形22a。 蝕刻之後採用一溶劑例如丙酮將光阻層32去除。去除 光阻層32後’保留下來圖案化之觸媒層20以及中間層22, 且圖案化觸媒層20與中間層22圖案相互對應。 9 201002499 狀之媒:圖形2〇3以形成具有預定之形 最终所要彳㈣之模Ί㈣形施之外表面形狀與 二 =!圖形1同樣需要具有球形之外表面％。 最終要付到非球面模仁 之外表面26。旦媒層㈣施需要具有非球面 光束直寫m古卜表面26於製作技術上可採用鐳射 法。鐳射光克亩宜寫、離子束直寫、或者灰階光罩微影 射光走曰雷早击 電子束直寫、離子束直分別指採用鐳 電子束、離子束攻擊觸媒層圖形2g 二擊之部分蒸發，由於錯射光束、電子束、離子束可:; 皮 =置因：可直接形成所想要之圖案。灰階光罩微影法利 里用先罩之通光量於不同位置上之變化’使得於經過光學投 衫糸統之曝光後塗佈於觸媒層圖形上之光阻得到曝光強度 :不同位置上之分佈，因此於光阻中之光活性化合物— C°mp°und ’ PAC)之濃度將產生對應光強度分佈之濃 度分佈，再經過顯影後’觸媒層圖形2〇a上之光阻就會依 PAC濃度之分佈而產生灰階之光阻圖案’定影後以活性離 子之非等向性蝕刻即可蝕刻出灰階之結構。 步驟5、以無電鍍之方法於該觸媒層圖形2〇a表面上生 長金屬層以形成相應之成型部50。本實施例中，該無電鍍 可選用鎳無電鑛。於無電鍍過程中’由於觸媒層圖形2〇: 之自催化作用，鎳金屬粒子不斷之於觸媒層圖形表面 析出並沉積於觸媒層圖形20a之外表面而最終形成成型部 5〇。由於基材10不具有催化作用’金屬粒子僅沉積於觸媒 201002499 層圖形2〇a之外表面而不沉積於基材1〇上因此只要無電 鍵之時間控制得當，成型部5〇之間是相互分離之。一般來 飞由於無電鑛之金屬沉積過程是各向同性地，因此觸媒 層圖形2Ga外表面之形狀會決定成型部％之最終形狀，例 如’如果觸媒層㈣2〇a為球面，則最終會得到半球形之 成型部50;如果觸媒層圖形施為非球面，則最終會得到 非球面之成型部5〇。 為了提南成型部50之耐久性，還可進一步於成型部％ 表面形成-層硬膜’例如Sic膜層或類金剛石膜。該硬膜 可採用濺鍍之方法形成於成型部50之表面。 、 本實施例中，對中間層22同樣進行了㈣，然而可理 解’還可㈣刻觸媒層2G，而不對中間層22進行姓刻。如 ，則最終得到之成型部部分會與中間層22之上表面接觸， 成型部5G與基材1G之間之結構力得以提高。 、t^f、付到之杈仁包括一層基材1〇 ’其-表面上分佈有 圖形24,每個觸媒層圖形24表面包覆有相應之 σ 。每個成型部50覆蓋-個相應之觸媒層圖形24 一：互之間分離。可選地，每個成型部如之表面還可形成 層硬膜，例如SiC膜層或類金剛石膜。 製作方法可採用微影法以及無電鍍之方法批量 :/、、複數成型部50之模仁’纟於微影法之高效率、 以及低成本’使得製作適宜於成型微型光學元件 U加容易，相應之加卫微型光學元件之 本得以提高。 千 11 201002499 不上所述，本發明確已符合發明專利之要件，遂依法 提出專利申請。惟’以上所述者僅為本㈣之較佳實施方 式，自不能以此限制本案之申請專利範圍 =士，發明之精神所作之等效變:本J 應涵盍於以下申請專利範圍内。 燹亿白 【圖式簡單說明】 圖1係本技術方案提供 圖2係圖1之方法各步 之模仁製作方法流程圖 驟示意圖。 【主要元件符號說明】 基材 觸媒層 中間層 光阻層 光罩 通孔 觸媒層圖形 中間層圖形 外表面 成型部 10 20 22 30、32 40 42 20a 22a 26 50 12201002499 IX. Description of the invention: [Technical field to which the invention pertains] The present invention relates to a mold core and a method of fabricating the same, and more particularly to a mold core for forming a micro-optical element and a method of fabricating the same. [Prior Art] Optical components currently used in mobile phone lens modules, such as lenses, are mostly produced by injection molding. The design of mobile phones is designed to be light, thin and short. It requires the thickness of each optical component in the lens module of the mobile phone to be reduced, and the overall thickness and size requirements are becoming more and more demanding. Micro-optical components are also gradually entering the nanometer scale. For details, see "Redefine Optical Device's Integration and Manufacturing through Nano-Engineering" by Jian Jim Wang at the 14th Annual Wireless and Optical Communications Conference (April 22-23, 2005). " One article. However, as micro-optical elements gradually move toward the nanometer scale, it becomes increasingly difficult to make dimensionally matched molds. Although the industry has also developed alternative technologies for making microlenses, such as photoresist thermal reflow, gray masking, and the like. However, the efficiency of these methods is far from being practical, and the cost is not enough. SUMMARY OF THE INVENTION A mold core which can be used for molding a micro-shaped optical element and which is easy to process, and a method of manufacturing the same will be described below by way of examples. 6 201002499 种权仁' includes: a layer substrate, a plurality of patterns distributed on a surface of the substrate and separated from each other, the catalyst layer pattern having a predetermined shape outside the surface of the substrate layer The crucible method forms a shaped portion having an outer surface having the same shape as the outer surface of the weir layer, and the catalyst layer has a catalytic effect on the electroless plating step of the shaped portion. A method of making a mold, comprising: providing a layer substrate; forming a layer touch on the substrate; patterning the catalyst layer to form a plurality of mutually separated touch (four) patterns; forming on the catalyst layer pattern The outer surface of the predetermined shape; and the method of producing an electroless ore is to grow a metal layer on the outer surface having a predetermined shape to obtain a mold core. In the mold core and the manufacturing method thereof, a catalyst layer having an outer surface having a predetermined shape is first obtained, and then a metal layer is grown on the outer surface of the catalyst layer by using an electroless ship to obtain a mold having a predetermined shape, which can be fully utilized. The high resolution of the lithography method and the low cost of the non-electrical process make it possible to quickly and accurately produce molds suitable for molding micro-optical components. [Embodiment] Referring to FIG. 1 and FIG. 2, the method for manufacturing the mold provided by the technical solution includes the following steps: In step 1, a substrate 10 is provided. In the present embodiment, the substrate 10 is selected from a twin crystal circle having a thickness of between 20 μm and 500 μm and a diameter of between 1 cm and 300 cm. The material of the substrate 1 is not particularly limited, and it does not have a catalytic effect on the corresponding electroless ore and can withstand the rot of the electroless plating solution. For example, if a nickel-based mold is to be produced, the substrate 1〇 does not have a catalytic effect on the nickel plating solution and does not react with the electroless plating solution, so when the substrate is placed in the electroless plating solution of nickel There is no nickel layer deposition on the surface of the substrate 10. In order to improve the process yield and the quality of the final mold, the wafer is generally subjected to a cleaning process. For example, Wet Chemical cieaning is used in various high-purity chemical solutions. Of course, various more advanced cleaning process technologies, such as Dry Clean and Vapor Cleaning Process, are available. For cleaning the wafer. In step 2, a catalyst layer 2 is formed on one surface of the substrate 10. The thickness of the catalyst layer 2 can range from 〇.5 microns to 1 〇 microns. In this embodiment, the dielectric layer 20 is a recording layer having a thickness of 1 μm, and the catalyst layer 20 can be formed by electron beam evaporation. In order to improve the bonding force between the catalyst layer 2 and the substrate ι, the intermediate layer 22 may be vapor-deposited on the surface of the substrate 1 before the formation of the catalyst layer 2, and the intermediate layer 22 may be made of chrome. The thickness can be between 1.1 μm and 5 μm, and the thickness in this embodiment is 〇2 μm. It can be understood that, by the switching of the target, the chrome plating layer 22 and the catalyst layer 2 can be grown in the same vapor deposition apparatus, that is, the target of the growth catalyst layer 20 is first shielded to deposit the intermediate layer 22, and then the middle of the shielding layer is grown. The target of layer 22 is such that a catalyst layer 2G is deposited on U. In addition to electron beaming, other suitable processes such as sputtering can also be used to grow the intermediate layer 22 and the catalyst layer 2〇. Step = 3, patterning the catalyst layer 2 to form a plurality of catalyst layer patterns μ. In the present embodiment, the catalyst layer pattern 24 is fabricated by a lithography method. Referring to FIG. 2, the photoresist layer 3 is coated on the surface of the catalyst layer 2 . The photoresist layer may be formed on the surface of the catalyst layer 20 by brushing or spin coating. For θ plus 8 201002499, the solvent in the fast photoresist layer 30 is volatilized, and a soft step can be performed after the coating is completed. Specifically, the substrate 1 can be placed on a hot plate of 9 Torr to 1 Torr or heated in an oven for about 1 minute. Next, the photoresist layer 30 is exposed to light using the photomask 40. A plurality of through holes 42 are formed in the photomask 40. In order to increase the resolution of the exposure, ultraviolet light of a shorter wavelength can be used for the exposure. The ultraviolet light passes through the through holes C in the mask 4 to cause photochemical reaction of the corresponding portion of the photoresist layer 30 to be decomposed (corresponding to positive photoresist) or crosslinked (corresponding to negative photoresist). After the exposure, the photoresist layer 30 is subjected to development processing, and in this embodiment, a positive photoresist is used, and thus the portion irradiated with ultraviolet light is removed to form a patterned photoresist layer 32. After development, the patterned photoresist layer 32 is hard baked (to Baking) to increase the thickness of the photoresist layer 32 and corrosion resistance, thereby facilitating subsequent etching processes. Specifically, the substrate 1 can be placed on a Hot Plate of 12 ° C or heated in an oven for about 2 minutes. After hard baking, the resin component in the photoresist layer 32 is completely hardened. Then, the catalyst layer 2 and the intermediate layer 22' of the dielectric layer 20 and the portion of the intermediate layer 22 protected by the photoresist layer 32 are successively etched by using different etching liquids, respectively, and the remaining portions are laterally removed. In this embodiment, the catalyst layer is over-etched to form a plurality of catalyst layer patterns 2a, and the intermediate layer is etched to form a plurality of intermediate layer patterns 22a. After the etching, the photoresist layer 32 is removed using a solvent such as acetone. After the photoresist layer 32 is removed, the patterned catalyst layer 20 and the intermediate layer 22 are retained, and the patterned catalyst layer 20 and the intermediate layer 22 pattern correspond to each other. 9 201002499 Shaped medium: Figure 2〇3 to form a shape with a predetermined shape (4) The shape of the outer surface (4) is the same as that of the second =! Figure 1 also requires a spherical outer surface %. Eventually, the outer surface 26 of the aspherical mold is applied. The dielectric layer (4) needs to have an aspherical beam direct writing m Gub surface 26 in the production technology can use laser method. Laser light gram should be written, ion beam direct writing, or gray-scale reticle lithography light ray ray lightning strike early electron beam direct writing, ion beam straight refers to the use of radium electron beam, ion beam attack catalyst layer graphics 2g two strikes Part of the evaporation, due to the wrong beam, electron beam, ion beam can be:; skin = cause: can directly form the desired pattern. The gray-scale reticle lithography method uses the change of the amount of light passing through the hood to different positions to make the exposure of the photoresist coated on the catalyst layer pattern after exposure by the optical shirting system to obtain the exposure intensity: different positions The distribution above, so the concentration of the photoactive compound in the photoresist - C °mp °und ' PAC) will produce a concentration distribution corresponding to the light intensity distribution, and after development, the photoresist on the catalyst layer pattern 2〇a A gray-scale resist pattern is generated according to the distribution of the PAC concentration. After fixing, the structure of the gray scale can be etched by anisotropic etching of the active ions. Step 5. A metal layer is grown on the surface of the catalyst layer pattern 2A by electroless plating to form a corresponding molded portion 50. In this embodiment, the electroless plating may be selected from nickel electroless ore. In the electroless plating process, the nickel metal particles are continuously deposited on the surface of the catalyst layer pattern and deposited on the outer surface of the catalyst layer pattern 20a due to the autocatalytic action of the catalyst layer pattern 2 to finally form the molded portion. Since the substrate 10 does not have a catalytic effect, the metal particles are deposited only on the outer surface of the catalyst layer 201002499 layer 2〇a and are not deposited on the substrate 1〇, so as long as the time without the electric bond is properly controlled, between the molding portions 5〇 Separated from each other. Generally, since the metal deposition process of the electroless ore is isotropic, the shape of the outer surface of the catalyst layer pattern 2Ga determines the final shape of the molded portion, for example, if the catalyst layer (4) 2〇a is a spherical surface, it will eventually The hemispherical shaped portion 50 is obtained; if the catalyst layer pattern is applied to the aspherical surface, the aspherical shaped portion 5〇 is finally obtained. In order to improve the durability of the molded portion 50, a -layer hard film such as a Sic film layer or a diamond-like film may be further formed on the surface of the molded portion. The hard film can be formed on the surface of the molding portion 50 by sputtering. In the present embodiment, the intermediate layer 22 is similarly subjected to (4), however, it is understood that the dielectric layer 2G can also be (4) without the surname of the intermediate layer 22. For example, the finally obtained molded portion portion comes into contact with the upper surface of the intermediate layer 22, and the structural force between the molded portion 5G and the substrate 1G is improved. The t-f, the paid coix seed comprises a layer of substrate 1 ’ 'the surface of which is distributed with a pattern 24, and each of the catalyst layer patterns 24 is coated with a corresponding σ. Each of the molding portions 50 covers a corresponding one of the catalyst layer patterns 24: separated from each other. Alternatively, a layer of a hard film such as a SiC film layer or a diamond-like film may be formed on each of the molded portions such as the surface. The manufacturing method can adopt the lithography method and the electroless plating method in batches: /, the mold portion of the plurality of molding portions 50, the high efficiency of the lithography method, and the low cost, making it easy to fabricate the micro-optical element U. The corresponding enhancement of the micro-optical components has been improved. Thousands 11 201002499 Not mentioned above, the present invention has indeed met the requirements of the invention patent, and has filed a patent application according to law. However, the above is only the preferred implementation of this (4). It is not possible to limit the scope of the patent application in this case. = The equivalent of the spirit of the invention: This J should be included in the scope of the following patent application.燹亿白 [A brief description of the drawings] Figure 1 is a technical solution provided in Figure 2 is a flow chart of the method of making the molds in each step of the method of Figure 1. [Main component symbol description] Substrate Catalyst layer Intermediate layer Photoresist layer Photomask Through hole Catalyst layer pattern Intermediate layer pattern Outer surface Molded part 10 20 22 30, 32 40 42 20a 22a 26 50 12