TW200952058A - Adhesive sheet for grinding back surface of semiconductor wafer and method for grinding back surface of semiconductor wafer using the same - Google Patents

Adhesive sheet for grinding back surface of semiconductor wafer and method for grinding back surface of semiconductor wafer using the same Download PDF

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TW200952058A
TW200952058A TW098106244A TW98106244A TW200952058A TW 200952058 A TW200952058 A TW 200952058A TW 098106244 A TW098106244 A TW 098106244A TW 98106244 A TW98106244 A TW 98106244A TW 200952058 A TW200952058 A TW 200952058A
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semiconductor wafer
adhesive sheet
adhesive
back surface
intermediate layer
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TW098106244A
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Chinese (zh)
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TWI459455B (en
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Noriyoshi Kawashima
Fumiteru Asai
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Nitto Denko Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C09J7/29—Laminated material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2423/00—Presence of polyolefin
    • C09J2423/006—Presence of polyolefin in the substrate
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2431/00—Presence of polyvinyl acetate
    • C09J2431/006—Presence of polyvinyl acetate in the substrate
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2433/00—Presence of (meth)acrylic polymer
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2433/00—Presence of (meth)acrylic polymer
    • C09J2433/006—Presence of (meth)acrylic polymer in the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/28—Web or sheet containing structurally defined element or component and having an adhesive outermost layer

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Adhesive Tapes (AREA)
  • Adhesives Or Adhesive Processes (AREA)

Abstract

The invention provides an adhesive sheet for grinding a back surface of a semiconductor wafer, which is to be adhered to a circuit forming surface of the semiconductor wafer when the back surface of the semiconductor wafer is ground, in which the adhesive sheet contains m adhesive layer, an intermediate layer and a substrate in this order from the circuit forming surface side, the intermediate layer has a JIS-A hardness of more than 55 to less than 80, and the intermediate layer has a thickness of 300 to 600 μm. Furthermore, the invention also provides a method for grinding a back surface of a semiconductor wafer, including adhering the above-mentioned adhesive sheet to a circuit forming surface of the semiconductor wafer, followed by grinding the back surface of the semiconductor wafer.

Description

200952058 六、發明說明： 【發明所屬之技術領域】 本發明係關於-種用於研磨表面上具有凹性及凸性之半 導體晶圓背面之黏著片# ’且本發明係關於—種利用該黏 著片材研磨一半導體晶圓背面之方法。 【先前技術】 當研磨表面上具有凹性及凸性之半導體晶圓f面時，必 需保護該晶圓表面以防止損壞晶圓表面上的凹性及凸性或 由晶圓的研磨塵粒或研磨水引起晶圓表面污染。此外，因 研磨後’晶圓本身薄且易碎，且晶圓表面具有凹性及凸 性，所以存在的問題係即使是輕度外力亦會輕易損壞晶 圓。 為在研磨該半導體晶圓背面期間保護該晶圓表面且防止 損壞該晶圓，已知之方法係將黏著片㈣附於該晶圓表 面。例如’ JP-A-200(M7239提出一種用於研磨一半導體晶 圓背面之黏著薄膜，其中具有1()至55之爪^硬度、且包 含-熱塑性樹脂之-中間層係提供在—基板層與一黏著層 之間。然而近年來’需要具有較薄厚度之半導體晶圓，且 同時已要求可在研磨後保持較佳之晶圓背面之平面厚度精 度。 【發明内容】 本發明之目的係提供一種用於研磨一半導體晶圓背面之 黏著片材，當研磨表面上具有凹性及凸性之半導體晶圓背 面時’該#4著片材可保護該晶圓表面上之凹性及凸性、防 138824.doc 200952058 止研磨灰塵或研磨水侵入該晶圓表面、防止研磨後損壞該 晶圓，且進一步使該晶圓背面之平面厚度精度保持良好； 及一種利用該黏著片材以研磨一半導體晶圓背面之方法。 即，本發明提供一種用於研磨一半導體晶圓背面之黏著 • 片材，s研磨該半導體晶圓背面時，該黏著片材黏附於該 . +導體晶圓之電路形成表面，其中黏著片材從-電路形成 表面侧按此順序包含一黏著層、一t間層及一基板，該令 0 間層具有大於55至小於80之JIS-Α硬度，且中間層具有3〇〇 微米至600微米之厚度。 文中使用之該中間層iJIS_A硬度係大於55至小於8〇， 較佳係大於5 8至小於8〇，且更佳係大於6〇至小於8〇，藉此 田將根據本發明之該黏著片材黏附於該半導體晶圓表面 時，該晶圓表面上的凸出可由該中間層固定，以便防止在 研磨該晶圓背面期間損壞凸出。此外，即使研磨背面後， 該黏著片材亦具有高強度，使得可牢固保持該晶圓且抑制 ❹ 該晶圓上的損壞。此外，該中間層可作為一緩衝層，且即 使當該半導體晶圓表面具有（例如）2〇〇微米至3〇〇微米之凸 ㈣，該中間層亦可在研磨期間吸收來自該晶圓背面側的 應力，《亥應力作用在該晶圓表面上之具有凸出之位置及不 具有凸出之位置’藉此可抑制平面中厚度精度的劣化。此 外，該中間層係填充在該半導體晶圓表面上的該等凸出之 門而，，、、工P曰1 U致可防止_晶圓之研磨灰塵或研磨水侵入 該晶圓表面與該黏著片材之間。在此態樣上，文中所指之 「JIS-A硬度」係、根據下述本說明書之「實例」部分中所 138824.doc 200952058 述之測定方法而定義。 此外’根據本發明之該黏著片材之中間層具有3 至600微米之厚度。 當該中間層之厚度經調整為3〇〇微米至6〇〇微米且較佳 ^彻微米至_微米時，亦可改良該黏著片材對該半導體 晶圓表面上的大型凸出的後續性質。進一步，可抑制在研 磨該晶圓背面期間發生破裂或凹痕。此外，黏附該黏著片 材所需的時間可經降低而藉此改良卫作效率。此外，當將 該黏著片材從該半㈣晶圓上剝離時，由於該黏著片材的 彎曲應力，研磨該背面後之薄晶圓可免遭損壞。 此外，鑑於晶圓保持性、與該晶圓之可剝離性該晶圓 表面之污染防止及類似物，該中間層最好包含至少一熱塑 性樹脂。 此外，根據本發明之該黏著片材之中間層較佳包含至少 一種成分，該成分係選自包括具有小於〇 89 g/cm3之密度 之低密度聚乙烯；具有30至5〇重量％之乙酸乙酯含量之乙 烯-乙酸乙醋共聚物；及具有3〇至5〇重量％之丙烯酸烷基醋 單元含量之乙烯-丙烯酸烷基酯共聚物（其中，該烷基具有j 至4個碳原子）之群組。 此外，在根據本發明之該黏著片材之黏著層中，較佳係 使用丙烯酸黏著劑。 當該黏著層包含丙烯酸黏著劑時，研磨後在從該晶圓背 面剝離該黏著片材期間，可降低由黏著劑引起之該晶圓表 面之污染。 138824.doc 200952058 卜根據本發明之該黏著片材之黏著層最好具有30微 米至60微米的厚度。 虽该黏著層之厚度調整為3()微米至6()微米，較佳係^微 米至微米且更佳係35微米至55微米時，可改良片材對 该半導體晶圓表面上凸出的後續性質，藉此可防止在研磨 違半導體晶圓背面期間産生之研磨灰塵或研磨水侵入該半 導體晶圓表面與該黏著片材之間。200952058 VI. Description of the Invention: [Technical Field] The present invention relates to an adhesive sheet for polishing a back surface of a semiconductor wafer having a concave and convex surface, and the present invention relates to the use of the adhesive A method of polishing a backside of a semiconductor wafer. [Prior Art] When grinding a f-plane of a semiconductor wafer having a concave and convex surface, it is necessary to protect the surface of the wafer to prevent damage to the concave and convexities on the surface of the wafer or to grind dust or particles from the wafer or The grinding water causes contamination of the wafer surface. In addition, since the wafer itself is thin and fragile after polishing, and the surface of the wafer is concave and convex, there is a problem that even a slight external force can easily damage the crystal. In order to protect the wafer surface during the grinding of the back side of the semiconductor wafer and to prevent damage to the wafer, a known method is to attach an adhesive sheet (4) to the wafer surface. For example, 'Jp-A-200 (M7239 proposes an adhesive film for polishing a back surface of a semiconductor wafer having a hardness of 1 () to 55 and comprising - a thermoplastic resin - an intermediate layer is provided on the substrate layer Between the adhesive layer and the adhesive layer. However, in recent years, semiconductor wafers having a relatively thin thickness have been required, and at the same time, it has been required to maintain a good planar thickness accuracy of the wafer back surface after polishing. [Invention] The object of the present invention is to provide An adhesive sheet for polishing a back surface of a semiconductor wafer. When the back surface of the semiconductor wafer having a concave and convex surface is polished, the #4 sheet can protect the concave and convex surface on the surface of the wafer. , 138824.doc 200952058 Stop grinding dust or grinding water invading the surface of the wafer, preventing damage to the wafer after grinding, and further maintaining the plane thickness accuracy of the back surface of the wafer; and using the adhesive sheet to grind one A method of backing a semiconductor wafer. That is, the present invention provides an adhesive sheet for polishing a back surface of a semiconductor wafer. When the back surface of the semiconductor wafer is polished, the adhesive sheet is adhered. The circuit of the +conductor wafer forms a surface, wherein the adhesive sheet comprises an adhesive layer, an inter-t layer and a substrate in this order from the side of the circuit-forming surface, wherein the inter-layer has a thickness of more than 55 to less than 80 JIS-Α hardness, and the intermediate layer has a thickness of 3 〇〇 micrometers to 600 μm. The intermediate layer iJIS_A hardness used herein is greater than 55 to less than 8 〇, preferably greater than 5 8 to less than 8 〇, and more preferably When the adhesive sheet according to the present invention is adhered to the surface of the semiconductor wafer, the protrusion on the surface of the wafer may be fixed by the intermediate layer to prevent the wafer from being polished. In addition, the adhesive sheet is damaged during the back surface. Further, even after the back surface is polished, the adhesive sheet has high strength, so that the wafer can be firmly held and damage on the wafer can be suppressed. Further, the intermediate layer can serve as a buffer layer. And even when the surface of the semiconductor wafer has a convex (four) of, for example, 2 Å to 3 μm, the intermediate layer can absorb the stress from the back side of the wafer during the grinding, and the stress acts on the crystal. On a round surface There is a convex position and a position where there is no protrusion', thereby suppressing deterioration of thickness precision in the plane. Further, the intermediate layer is filled with the protruding gates on the surface of the semiconductor wafer, P 曰 1 U can prevent _ wafer grinding dust or grinding water from invading between the surface of the wafer and the adhesive sheet. In this aspect, the "JIS-A hardness" referred to in the text is based on Further, the intermediate layer of the adhesive sheet according to the present invention has a thickness of from 3 to 600 μm. The thickness of the intermediate layer is adjusted as described in the "Examples" section of the specification, which is defined by the measurement method described in 138824.doc 200952058. The subsequent properties of the adhesive sheet to the large protrusions on the surface of the semiconductor wafer can also be improved from 3 Å to 6 μm and preferably from 0 μm to _μm. Further, it is possible to suppress the occurrence of cracks or dents during the grinding of the back surface of the wafer. In addition, the time required to adhere the adhesive sheet can be lowered to thereby improve the efficiency of the drapes. Further, when the adhesive sheet is peeled off from the half (four) wafer, the thin wafer after the back surface is polished can be prevented from being damaged due to the bending stress of the adhesive sheet. Further, the intermediate layer preferably contains at least one thermoplastic resin in view of wafer retention, contamination prevention of the wafer surface and the like with respect to the releasability of the wafer. Further, the intermediate layer of the adhesive sheet according to the present invention preferably comprises at least one component selected from the group consisting of low density polyethylene having a density of less than 〇89 g/cm3; and acetic acid having 30 to 5% by weight An ethylene-acetic acid ethyl acetate copolymer having an ethyl ester content; and an ethylene-alkyl acrylate copolymer having an alkyl acrylate unit content of from 3 to 5 % by weight (wherein the alkyl group has from j to 4 carbon atoms) ) group. Further, in the adhesive layer of the adhesive sheet according to the present invention, an acrylic adhesive is preferably used. When the adhesive layer contains an acrylic adhesive, the surface of the wafer caused by the adhesive can be reduced during the peeling of the adhesive sheet from the back side of the wafer after polishing. 138824.doc 200952058 The adhesive layer of the adhesive sheet according to the present invention preferably has a thickness of from 30 micrometers to 60 micrometers. Although the thickness of the adhesive layer is adjusted from 3 (micrometers) to 6 (micrometers), preferably from micrometers to micrometers, and more preferably from 35 micrometers to 55 micrometers, the sheet may be modified to protrude on the surface of the semiconductor wafer. Subsequent properties whereby abrasive dust or abrasive water generated during the grinding of the backside of the semiconductor wafer is prevented from intruding between the surface of the semiconductor wafer and the adhesive sheet.

Ο 此外，根據本發明之該黏著片材最好具有5至i5 n/25 mm之黏著力。在此態樣上，文中所指之「黏著力」係根 據下述本說明書之「實例」部分中所述之測定方法而定 義0 在此例中，該黏著力係調整為5至15 N/25 mm，較佳係了 至15 N/25 mm且更佳係9至15 N/25 mm，當在研磨該晶圓 背面後將該黏著片材從該半導體晶圓表面上剝離時可剝 離該黏著片材而不損壞該半導體晶圓表面上的凸出。此 外，可防止在研磨該半導體晶圓背面期間水侵入該黏著片 材與該半導體晶圓表面之間，且可降低在㈣該黏著片材 期間對該半導體晶圓表面上凸出的負荷。 此外，本發明亦提供一種用於研磨半導體晶圓背面之方 法，其包括將上述黏著片材黏附於該半導體晶圓之一電路 形成表面’緊接著研磨該半導體晶圓背面。 【實施方式】 參考所需圖式，下列將詳細說明本發明之一實施例。圖 1係一顯示用於研磨本發明之一半導體晶圓背面之黏著片 138824.doc 200952058 材的一實例之橫截面圖。 圖1之用於研磨一半導體晶圓背面之黏著片材4係一黏附 於：半導體晶圓6之電路形成表面5之黏著片材，且從該電 路形成表面5側按此順序包含一黏著層3、一中間層2及一 基板1。 作為組成該基板1之材料可例示為例如，諸如聚對苯二 甲酸乙二酯（PET)之聚酯；諸如聚乙烯（PE)及聚丙烯（pp)之 聚烯fe樹脂；聚醯亞胺（PI);聚二醚酮（pEEK);諸如聚氣 乙烯（PVC)之聚氣乙烯系樹脂；聚偏二氣乙烯系樹脂；聚 醯胺樹脂；聚胺酯；聚苯乙烯系樹脂；丙烯酸系樹脂；氟 系樹脂；纖維質樹脂；熱固性樹脂；金屬箔；紙；及類似 物。附帶言之’作為組成該基板1之材料，亦可使用稍後 例示為組成該中間層2之熱塑性樹脂材料之樹脂。此等材 料可單獨使用或以其中兩種或多種之組合使用。該基板1 可具有包含複數個相同或不同層之多層結構。 鑑於半導體晶圓保持性、與該晶圓之可剝離性、該晶圓 表面之污染防止及類似物，該中間層2最好包含至少一種 熱塑性樹脂。該熱塑性樹脂可單獨使用或以其中兩種或多 種之組合使用。 熱塑性樹脂之常用實例包括聚乙烯（PE);聚丁烯；乙稀 共聚物，諸如乙烯-丙烯共聚物（EPM)、乙烯-丙烯-二烯共 聚物（EPDM)、乙烯-乙基丙烯酸酯共聚物（EEA)、乙烯-丙 烯酸酯-馬來酸酐共聚物（EEAMAH)、乙烯-環氧丙基甲基 丙烯酸酯共聚物（EGMA)、乙烯-曱基丙烯酸共聚物 138824.doc 200952058 (EMAA)及乙烯-乙酸乙酯共聚物（EVA);聚烯烴共聚物； ' 熱塑性彈性體，諸如丁二烯基彈性體、乙烯-異戊二烯基 彈性體及酯基彈性體；熱塑性聚酯；聚醯胺系樹脂，諸如 聚醯胺-1 2系共聚物；聚胺酯；聚苯乙烯系樹脂；赛璐玢 (cell〇phane);丙烯酸樹脂，諸如聚丙烯酸酯及聚甲基丙烯 .酸f酯；及聚氣乙烯系樹脂，諸如氯乙烯-乙酸乙酯共聚 物。特定而言，較佳係至少一種成分選自乙烯-乙酸乙酯 φ 共聚物（乙酸乙酯含量：30至50重量％)、具有30至50重量 °/〇之丙烯酸烧基酯單元含量（其中，烧基具有1至4個碳原 子）之乙烯-丙烯酸烷基酯共聚物及具有小於〇89 g/cm3之密 度之低密度聚乙烯。 此外，只要不削弱諸如硬度之特徵，則該中間層2可包 含另一成分。此等成分包括例如增黏劑、可塑劑、柔軟 劑、填充劑、抗氧化劑及類似物。包含熱塑性樹脂之該中 間層2可由一單一層組成，但可具有包含複數個相同或不 參 同層之多層結構。 雖然只要不削弱晶圓保持性及晶圓保護性，可適當選擇 °亥中間層2之厚度，但在本發明中，該厚度可設在300微米 至600微米的範圍内且較佳係4〇〇微米至6〇〇微米。當該中 間層之厚度調整在此範圍内時，亦可改良片材對半導體晶 圓表面上大型凸出的後續性質。此外，可抑制在研磨該晶 $背面期間破裂或凹痕的發生。此外，黏附該黏著片材所 $的時間可經降低，藉此改良工作效率。在此態樣上，在 "亥中間層具有多層結構之情況下，該中間層之厚度意指該 138824.doc 200952058 複數個層的總厚度。 組成該黏著層3之黏著劑之實例包括習知的黏著劑，諸 如丙稀酸單體（丙烯酸點著劑）共聚物、♦酮系黏著劑及橡 膠系黏著劑。該等黏著劑可單獨使用或以其中兩種或多種 之混合物使用。特定而t，該黏著層3中較佳係使用丙烯 酸黏著劑。當該#著層包含丙烯酸#著劑時，可降低在研 磨後從該晶圓表面剝離該黏著片材期間由該黏著劑引起的 晶圓表面的污染。 此外，組成該黏著劑之聚合物可具有交聯結構。此一聚 合物係藉由在交聯劑存在下聚合—單體混合物而獲得該 單體混合物包含具有-官能基’諸如絲、經基、環氧基 或胺基之單體(例如丙稀酸單體)。在具有包含具有交聯結 構之聚合物之黏著層3之黏著片材中，自持性經改良，以 防止該黏著片材變形’且因此保持該黏著片材的平坦狀 態。因此’該黏著片材可藉由利用一自動化黏附裝置而準 確且輕鬆地黏附於一半導體晶圓。 此外，亦可使用紫外線·可固化黏著劑作為該黏著劑。 此-紫外線-可固化黏著劑係例如藉由在黏著劑材料中摻 雜可經紫外線照射而固化以形成低黏著材料之低聚物成分 而獲得。t該黏著層3係由該紫外線_可固化黏著劑組成 由於上述低聚物成如，塑性流動性被賦予黏著劑。因 此’易進行該黏著片材之黏附。同時，當剝離該黏著片材 時，低黏著材料係經紫外線照射而形成，_黏著片材 可輕易從該晶圓上剝離。 138824.doc -10- 200952058 組成該黏著劑之主要單體之常用實例包括丙烯酸曱酯、 曱基丙烯酸曱酯、丙烯酸乙酯、曱基丙烯酸乙酯、丙烯酸 丁酯、甲基丙烯酸丁酯、丙稀酸2_乙基己酯及甲基丙烯酸 2-乙基己酯。此等單體可單獨使用或以其中兩種或多種之 - 混合物使用。一般而言，主要單體最好係以基於所有用作 ， 黏著劑聚合物之原材料之單體總量的60至99重量°/〇之量而 包含。 φ 與主要單體共聚化且具有可與交聯劑反應之官能基之共 聚單體之實例包括丙烯酸、甲基丙烯酸、衣康酸、中康 酸、檸康酸、富馬酸、馬來酸、衣康酸單烧基醋、中康酸 單烷基酯、檸康酸單烷基酯、富馬酸單烷基酯、馬來酸單 烷基酯、丙烯酸2-羥乙酯、曱基丙烯酸2_羥乙酯、丙烯醯 胺、甲基丙烯醯胺、丙稀酸第三丁基胺基乙醋及甲基丙稀 酸第三丁基胺基乙酯。此等共聚單體之一者可與上述主要 單體共聚化，或其中兩者或多者可與上述主要單體共聚 參 一般而$ ’具有可與交聯劑反應t官能基之共聚單體 最好係以基於所有用作黏著劑聚合物之原材料之單體總量 的1至40重量％之量而包含。 該黏著層3之厚度較佳係3()微米請 ‘米至57微米，且仍更佳係'35微米至55微米。更彳係33微 在本發明之最佳實施例中’用於研磨半導體晶圓背面且 具有上述組成之黏著片材係藉由製備該基…與該中間層2 之層積體，且接著在該層積體之中間層2側上形成該黏著 138824.doc 200952058 在該層積體之中間層2侧上形成該黏著層3之方法包括. 一種將黏著劑組合物施加在脫模膜之-表面上，接著予以 乾燥以形成該黏著層3,且接著將所得黏著層3轉移至 積體的中㈣2側之方法；及__種將黏著劑組合物施加在 該層積體的中間層2側上，接著乾燥以形成該黏著層3之方 法。 v為增加該基板1與該中間層2之間的黏著力，可在其等之 間額外提供-黏著層。此外，為增加該中間層2與該黏著 層3之間的黏著力’最好在其上提供有該黏著層以中間層 2的表面上進行電暈處理、化學處理或類似處理。此外， 底塗層可提供在該中間層2與該黏著層3之間。 出於保護該黏著層3之目的’亦可使用脫模膜。脫模膜 $實例包括經矽酮處理或經氟處理之塑膠薄膜（諸如聚對 苯二曱酸乙二醋薄膜及聚丙稀薄膜）；紙；非極性材料（（尤 其係非極性聚合物）諸如聚乙烯及聚丙烯）薄膜。 實例 參考下列實例更詳細地描述本發明，但不應理解為由此 受限制。 用於研磨半導體晶圓背面之黏著片材之黏附 用於研磨半導體晶圓背面之黏著片材係在下列條件下製 備，且接著黏附於半導體晶圓之表面，該半導體晶圓具有 形成於其上之具有200微米高度之凸塊，且具有75〇微米之 厚度（不包括該凸塊）及8英寸之直徑。由Niu〇 Seiki有限公 司製造之DR-3000II係用於黏附該黏著片材。 138824.doc -12· 200952058 用於研磨半導體晶圓背面之方法 •將該黏著片材黏附於該半導體晶圓之表面，且接著利用 由DISCO公司製造之石夕晶圓研磨機研磨該晶圓背面至多為 250微米之厚度。 剝離用於研磨半導體晶圓背面之黏著片材之方法 在完成該半導體晶圓背面之研磨後，從該黏著片材側照 射460 mJ/cm2之紫外線以固化該黏著層。接著，在將用於 ❹ 剝離該黏著片材之片材黏附於該黏著片材之後，將該黏著 片材及用於剝離s亥黏著片材之片材一.起剝離。由Nitt〇 Seiki有限公司製造之HR-850011係用於剥離該黏著片材。 黏著層 將下列一種黏著劑用作為實例及對比實例之黏著片材中 使用之黏著劑。 將包含78份丙婦酸乙酯、1〇〇份丙稀酸丁酯及4〇份丙稀 酸2-羥乙酯之經混合之混合物在曱苯溶液中共聚合以獲得 ❿ 具有300,00〇數平均分子量之丙烯酸系共聚物。隨後，添 加43份異氰酸2·甲基丙烯醯氧乙酯與此共聚物反應以將碳_ 碳雙鍵引入聚合物分子的側鏈中。基於100份此聚合物， 進一步混合1份聚異氰酸酯系交聯劑及3份乙醯苯系光聚合 •引發劑’且將所得混合物施加在經脫模處理之薄膜上，藉 此製備一黏著層。 中間層之JIS-A硬度的測定 以一種形式放置原材料樹脂粒，且在120°C至160°C下加 熱以製備厚度為2 mm之加壓片材。將因此製備的測試碎片 138824.doc -13- 200952058 堆疊成14 mm之厚度。堆疊後，根據jis_k_6301-1995中指 定的方法進行測定。 黏著力之測定 除下列指定條件外’根據JIS Z-0237-1991中指定的方法 進行測定。將該黏著片材黏附於SUS 3 04-B A板的表面，且 使其靜置1小時。拋棄一部分黏著片材，且以18〇度的剝離 角及300 mm/min的剝離速度從SUS 304-BA板的表面上剝 離該片材。此時測定應力，且根據N/25 mm將其轉化成黏 著力。 實例1 使用聚對苯二甲酸乙二酯作爲用於一基板之樹脂。使用 具有60 JIS-A硬度之乙烯-乙酸乙酯共聚物樹脂作爲用於一 中間層之樹脂。由此等，藉由層疊法製得具有38微米之厚 度的基板與具有450微米之厚度的中間層之層積體。接 著，在其上提供有該黏著層之中間層之表面上進行電暈處 理，且將具有35微米之厚度的黏著層轉移至該中間層的經 電暈處理表面。轉移後，在45。(：下加熱24小時，接著冷卻 至室溫，藉此獲得用於研磨一半導體晶圓背面之黏著片 材。該黏著片材的黏著力為8.5 N/25 mm。 實例2 使用聚對苯二曱酸乙二醋作爲用於一基板之樹脂。使用 具有68 m-A硬度之乙稀·乙酸以旨共聚物樹脂作爲用於一 中間層之樹脂。由此，藉由層疊法製得具有38微米之厚度 的基板與具有500微米之厚度的中間層之層積體。接著， 138824.doc -14- 200952058 在其上提供有該黏著層之中間層之表面上進行電暈處理， 且將具有35微米之厚度的黏著層轉移至該中間層的經電晕 處理表面。轉移後’在45〇c下加熱24小時，接著冷卻至室 溫’藉此獲得用於研磨一半導體晶圓背面之黏著片材。該 黏著片材的黏著力為9.2 n/25 mm。 實例3Further, the adhesive sheet according to the present invention preferably has an adhesive force of 5 to i5 n / 25 mm. In this aspect, the term "adhesion" as used herein is defined in accordance with the measurement method described in the "Examples" section of the following specification. In this example, the adhesion is adjusted to 5 to 15 N/ 25 mm, preferably 15 N/25 mm and more preferably 9 to 15 N/25 mm, which can be peeled off when the adhesive sheet is peeled off the surface of the semiconductor wafer after grinding the back side of the wafer The sheet is adhered without damaging the protrusions on the surface of the semiconductor wafer. In addition, water can be prevented from intruding between the adhesive sheet and the surface of the semiconductor wafer during polishing of the back surface of the semiconductor wafer, and the load on the surface of the semiconductor wafer during the (4) adhesion of the semiconductor wafer can be reduced. Moreover, the present invention also provides a method for polishing a back surface of a semiconductor wafer, comprising adhering the adhesive sheet to a circuit forming surface of the semiconductor wafer and subsequently polishing the back surface of the semiconductor wafer. [Embodiment] An embodiment of the present invention will be described in detail below with reference to the drawings. BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a cross-sectional view showing an example of an adhesive sheet for polishing a back surface of a semiconductor wafer of the present invention 138824.doc 200952058. The adhesive sheet 4 for polishing the back surface of a semiconductor wafer is adhered to an adhesive sheet of the circuit forming surface 5 of the semiconductor wafer 6, and an adhesive layer is included in this order from the side of the circuit forming surface 5 3. An intermediate layer 2 and a substrate 1. The material constituting the substrate 1 can be exemplified as, for example, a polyester such as polyethylene terephthalate (PET); a polyolefin resin such as polyethylene (PE) and polypropylene (pp); polyimine (PI); polydiether ketone (pEEK); polystyrene-based resin such as polyethylene (PVC); polyvinylidene-based resin; polyamine resin; polyurethane; polystyrene resin; acrylic resin Fluorine-based resin; cellulosic resin; thermosetting resin; metal foil; paper; and the like. Incidentally, as the material constituting the substrate 1, a resin which is exemplified later as a thermoplastic resin material constituting the intermediate layer 2 can also be used. These materials may be used singly or in combination of two or more kinds thereof. The substrate 1 may have a multilayer structure comprising a plurality of identical or different layers. The intermediate layer 2 preferably contains at least one thermoplastic resin in view of semiconductor wafer retention, releasability with the wafer, contamination prevention of the wafer surface, and the like. The thermoplastic resin may be used singly or in combination of two or more kinds thereof. Common examples of the thermoplastic resin include polyethylene (PE); polybutene; ethylene copolymer such as ethylene-propylene copolymer (EPM), ethylene-propylene-diene copolymer (EPDM), ethylene-ethyl acrylate copolymerization (EEA), ethylene-acrylate-maleic anhydride copolymer (EEAMAH), ethylene-epoxypropyl methacrylate copolymer (EGMA), ethylene-mercaptoacrylic acid copolymer 138824.doc 200952058 (EMAA) and Ethylene-ethyl acetate copolymer (EVA); polyolefin copolymer; 'thermoplastic elastomer such as butadiene-based elastomer, ethylene-isoprene-based elastomer and ester-based elastomer; thermoplastic polyester; polyfluorene An amine resin such as a polyamide-1 2 copolymer; a polyurethane; a polystyrene resin; a cell 〇 e ;; an acrylic resin such as a polyacrylate and a polymethacrylic acid; A gas-gathered vinyl resin such as a vinyl chloride-ethyl acetate copolymer. In particular, it is preferred that at least one component is selected from the group consisting of ethylene-ethyl acetate φ copolymer (ethyl acetate content: 30 to 50% by weight), and an alkyl acrylate unit content of 30 to 50 wt/min (wherein An alkyl-alkyl acrylate copolymer having a calcination group of 1 to 4 carbon atoms and a low density polyethylene having a density of less than 〇89 g/cm 3 . Further, the intermediate layer 2 may contain another component as long as the characteristics such as hardness are not impaired. Such ingredients include, for example, tackifiers, plasticizers, softeners, fillers, antioxidants, and the like. The intermediate layer 2 comprising a thermoplastic resin may be composed of a single layer, but may have a multilayer structure comprising a plurality of identical or non-reference layers. Although the thickness of the intermediate layer 2 can be appropriately selected as long as the wafer retention and the wafer protection are not impaired, in the present invention, the thickness may be set in the range of 300 μm to 600 μm and preferably 4〇. 〇 microns to 6 〇〇 microns. When the thickness of the intermediate layer is adjusted within this range, the subsequent properties of the sheet to large protrusions on the surface of the semiconductor wafer can also be improved. Further, the occurrence of cracks or dents during the grinding of the back surface of the crystal can be suppressed. In addition, the time for adhering the adhesive sheet can be reduced, thereby improving work efficiency. In this aspect, in the case where the middle layer has a multi-layer structure, the thickness of the intermediate layer means the total thickness of the plurality of layers of the 138824.doc 200952058. Examples of the adhesive constituting the adhesive layer 3 include conventional adhesives such as an acrylic acid monomer (acrylic acid dot binder) copolymer, a ketone adhesive, and a rubber adhesive. These adhesives may be used singly or in combination of two or more of them. Specifically, t is preferably an acrylic adhesive in the adhesive layer 3. When the #layer contains an acrylic #-ingreding agent, contamination of the wafer surface caused by the adhesive during peeling of the adhesive sheet from the surface of the wafer after grinding can be reduced. Further, the polymer constituting the adhesive may have a crosslinked structure. The polymer is obtained by polymerizing a monomer mixture in the presence of a crosslinking agent, and the monomer mixture comprises a monomer having a -functional group such as a silk, a trans group, an epoxy group or an amine group (for example, acrylic acid). monomer). In the adhesive sheet having the adhesive layer 3 comprising the polymer having a crosslinked structure, the self-sustainability is improved to prevent the adhesive sheet from being deformed' and thus the flat state of the adhesive sheet is maintained. Therefore, the adhesive sheet can be adhered to a semiconductor wafer accurately and easily by using an automated bonding apparatus. Further, an ultraviolet curable adhesive can also be used as the adhesive. This ultraviolet-curable adhesive is obtained, for example, by doping in an adhesive material to be cured by ultraviolet irradiation to form an oligomer component of a low-adhesive material. t The adhesive layer 3 is composed of the ultraviolet-curable adhesive. The plasticity is imparted to the adhesive due to the formation of the above oligomer. Therefore, it is easy to adhere the adhesive sheet. At the same time, when the adhesive sheet is peeled off, the low-adhesive material is formed by ultraviolet irradiation, and the adhesive sheet can be easily peeled off from the wafer. 138824.doc -10- 200952058 Common examples of the main monomers constituting the adhesive include decyl acrylate, decyl methacrylate, ethyl acrylate, ethyl methacrylate, butyl acrylate, butyl methacrylate, and C. Diethyl 2-ethylhexyl ester and 2-ethylhexyl methacrylate. These monomers may be used singly or in combination of two or more of them. In general, the main monomer is preferably contained in an amount of from 60 to 99% by weight based on the total amount of the monomers used as the raw material of the adhesive polymer. Examples of comonomers of φ copolymerized with a main monomer and having a functional group reactive with a crosslinking agent include acrylic acid, methacrylic acid, itaconic acid, mesaconic acid, citraconic acid, fumaric acid, and maleic acid. , itaconic acid monoalkyl vinegar, mesaconic acid monoalkyl ester, citraconic acid monoalkyl ester, fumaric acid monoalkyl ester, maleic acid monoalkyl ester, 2-hydroxyethyl acrylate, sulfhydryl group 2-Hydroxyethyl acrylate, acrylamide, methacrylamide, tert-butylaminoethyl acrylate and tert-butylaminoethyl methacrylate. One of these comonomers may be copolymerized with the above-mentioned main monomers, or two or more of them may be copolymerized with the above-mentioned main monomers, and the comonomer having a t-functional group may be reacted with the crosslinking agent. It is preferably contained in an amount of from 1 to 40% by weight based on the total of all the monomers used as the raw material of the adhesive polymer. The thickness of the adhesive layer 3 is preferably 3 () micrometers, please be - meters to 57 micrometers, and still more preferably '35 micrometers to 55 micrometers. Further, in the preferred embodiment of the present invention, the adhesive sheet for polishing the back surface of the semiconductor wafer and having the above composition is formed by laminating the substrate and the intermediate layer 2, and then The adhesion is formed on the side of the intermediate layer 2 of the laminate. 138824.doc 200952058 The method of forming the adhesive layer 3 on the side of the intermediate layer 2 of the laminate includes: applying an adhesive composition to the release film - a surface, followed by drying to form the adhesive layer 3, and then transferring the obtained adhesive layer 3 to the middle (4) 2 side of the integrated body; and __ applying the adhesive composition to the intermediate layer 2 of the laminated body On the side, it is then dried to form the adhesive layer 3. v is to increase the adhesion between the substrate 1 and the intermediate layer 2, and an additional adhesive layer may be provided between them. Further, in order to increase the adhesion between the intermediate layer 2 and the adhesive layer 3, it is preferable to provide the adhesive layer thereon to perform corona treatment, chemical treatment or the like on the surface of the intermediate layer 2. Further, an undercoat layer may be provided between the intermediate layer 2 and the adhesive layer 3. A release film can also be used for the purpose of protecting the adhesive layer 3. Examples of the release film $ include an anthrone-treated or fluorine-treated plastic film (such as a polyethylene terephthalate film and a polypropylene film); a paper; a non-polar material (especially a non-polar polymer) such as Polyethylene and polypropylene) film. EXAMPLES The invention is described in more detail with reference to the following examples, but should not be construed as limited thereby. Adhesion of an adhesive sheet for polishing a back surface of a semiconductor wafer. An adhesive sheet for polishing a back surface of a semiconductor wafer is prepared under the following conditions and then adhered to a surface of a semiconductor wafer having a semiconductor wafer formed thereon It has a bump of 200 microns in height and has a thickness of 75 microns (excluding the bump) and a diameter of 8 inches. The DR-3000II manufactured by Niu〇 Seiki Co., Ltd. is used to adhere the adhesive sheet. 138824.doc -12· 200952058 Method for Grinding the Back Side of a Semiconductor Wafer • Adhering the adhesive sheet to the surface of the semiconductor wafer, and then grinding the back of the wafer using a Shihwa wafer grinder manufactured by DISCO Corporation Up to a thickness of 250 microns. Method of peeling off the adhesive sheet for polishing the back surface of the semiconductor wafer After the polishing of the back surface of the semiconductor wafer was completed, ultraviolet rays of 460 mJ/cm2 were irradiated from the side of the adhesive sheet to cure the adhesive layer. Next, after the sheet for peeling the adhesive sheet is adhered to the adhesive sheet, the adhesive sheet and the sheet for peeling off the adhesive sheet are peeled off. HR-850011 manufactured by Nitt〇 Seiki Co., Ltd. is used to peel off the adhesive sheet. Adhesive layer One of the following adhesives was used as an adhesive for use in an adhesive sheet of an example and a comparative example. A mixed mixture comprising 78 parts of ethyl acetoacetate, 1 part of butyl acrylate and 4 parts of 2-hydroxyethyl acrylate is copolymerized in a solution of benzene to obtain ❿ having 300,00 〇 An acrylic copolymer having a number average molecular weight. Subsequently, 43 parts of 2,methacryloyloxyethyl isocyanate was added to react with the copolymer to introduce a carbon-carbon double bond into the side chain of the polymer molecule. Based on 100 parts of the polymer, 1 part of a polyisocyanate crosslinking agent and 3 parts of an acetonitrile-based photopolymerization initiator are further mixed and the resulting mixture is applied to the release-treated film to prepare an adhesive layer. . Measurement of JIS-A hardness of the intermediate layer Raw material resin pellets were placed in one form and heated at 120 ° C to 160 ° C to prepare a pressed sheet having a thickness of 2 mm. The thus prepared test pieces 138824.doc -13 - 200952058 were stacked to a thickness of 14 mm. After stacking, the measurement was carried out according to the method specified in jis_k_6301-1995. Measurement of adhesion The measurement was carried out according to the method specified in JIS Z-0237-1991, except for the following specified conditions. The adhesive sheet was adhered to the surface of the SUS 3 04-B A plate, and allowed to stand for 1 hour. A part of the adhesive sheet was discarded, and the sheet was peeled off from the surface of the SUS 304-BA plate at a peeling angle of 18 degrees and a peeling speed of 300 mm/min. The stress was measured at this time and it was converted into adhesion according to N/25 mm. Example 1 Polyethylene terephthalate was used as a resin for a substrate. An ethylene-ethyl acetate copolymer resin having a hardness of 60 JIS-A was used as the resin for an intermediate layer. Thus, a laminate having a thickness of 38 μm and an intermediate layer having a thickness of 450 μm was obtained by a lamination method. Next, corona treatment was performed on the surface of the intermediate layer on which the adhesive layer was provided, and an adhesive layer having a thickness of 35 μm was transferred to the corona-treated surface of the intermediate layer. After the transfer, at 45. (: heating under 24 hours, followed by cooling to room temperature, thereby obtaining an adhesive sheet for polishing the back surface of a semiconductor wafer. The adhesion of the adhesive sheet was 8.5 N/25 mm. Example 2 Using Poly(p-phenylene) Ethylene phthalate citrate is used as a resin for a substrate. Ethylene acetate having a hardness of 68 mA is used as the resin for the intermediate layer, whereby a thickness of 38 μm is obtained by a lamination method. a laminate of the substrate and an intermediate layer having a thickness of 500 μm. Next, 138824.doc -14-200952058 is subjected to a corona treatment on the surface of the intermediate layer on which the adhesive layer is provided, and will have a thickness of 35 μm The thickness of the adhesive layer was transferred to the corona-treated surface of the intermediate layer. After transfer, 'heating at 45 ° C for 24 hours, followed by cooling to room temperature' thereby obtaining an adhesive sheet for polishing the back surface of a semiconductor wafer. The adhesive sheet has an adhesion of 9.2 n/25 mm.

使用聚對苯：甲酸乙：醋作爲用於—基板之樹脂。使用 ”有60 JIS-A硬度之乙稀_乙酸乙醋共聚物樹脂作爲用於一 中間層之樹脂。m由層疊法製得具有38微米之厚度 的基板與具有350微米之厚度的中間層之層積體。接著， 在其上提供有該黏著層之中間層之表面上進行電暈處理， 且將具有45微米之厚度的黏著層轉移至該中間層的經電晕 處理表面。轉移後，在45t：下加熱24小時，接著冷卻至室 溫’藉此獲得用於研磨一半導體晶圓背面之黏著片材。該 黏著片材的黏著力為6.3 N/25 mm。 實例4 使用聚對苯二甲酸乙二醋作爲用於—基板之樹脂。使用 具有72 JIS-A硬度之乙烯.乙酸乙醋共聚物樹脂作爲用於— 中間層之樹脂。由藉由層叠法製得具有38微米之厚度 的基板與具有550微米之厚度的中間層之層積體。接著= 在其上提供有該黏著層之中間層之表面上進行電暈處理， 且將具有45微米之厚度的黏著層轉移至該中間層的經電暈 處理表面1移後，在45t下加熱24小時，接著冷卻至室 溫’藉此獲得用於研磨一半導體晶圓背面之黏著片材。該 138824.doc -15- 200952058 黏著片材的黏著力為10.2 N/25 mm 對比實例1 使用聚對苯二甲酸乙二醋作爲用於—基板之樹脂。使用 具有38 JIS_A硬度之乙稀乙酸乙醋共聚物樹脂作爲用於一 中間層之樹脂°由& ’藉由層疊法製得具有38微來之厚卢 的基板與具有450微米之厚度的中間層之層積體。接著了 在其上提供有該黏著層之中間層之表面上進行電暈處理， 且將具有40微米之厚度的黏著層轉移至該中間層的經電晕 ^理表面。轉移後’在饥下加熱24小時，接著冷卻至室 溫’藉此獲得用於研磨一半導體晶圓背面之黏著片材。該 黏著片材的黏著力為7 4 n/25 mm。 對比實例2Polyparaphenylene: formic acid B: vinegar is used as the resin for the substrate. The use of "60 JIS-A hardness of ethylene-acetic acid ethyl acetate copolymer resin as a resin for an intermediate layer. m by lamination method to obtain a substrate having a thickness of 38 microns and a layer having an intermediate layer having a thickness of 350 microns. Then, a corona treatment is performed on the surface of the intermediate layer on which the adhesive layer is provided, and an adhesive layer having a thickness of 45 μm is transferred to the corona-treated surface of the intermediate layer. 45t: heating under 24 hours, followed by cooling to room temperature' thereby obtaining an adhesive sheet for grinding the back surface of a semiconductor wafer. The adhesive sheet has an adhesion of 6.3 N/25 mm. Example 4 Using Poly(p-phenylene) Ethylene formate was used as the resin for the substrate. Ethylene. Acetate copolymer resin having a hardness of 72 JIS-A was used as the resin for the intermediate layer. A substrate having a thickness of 38 μm was obtained by a lamination method. a laminate with an intermediate layer having a thickness of 550 μm. Then = corona treatment is performed on the surface of the intermediate layer on which the adhesive layer is provided, and an adhesive layer having a thickness of 45 μm is transferred to the intermediate layer Scripture After the halo treatment surface 1 was removed, it was heated at 45 t for 24 hours, and then cooled to room temperature ' thereby obtaining an adhesive sheet for polishing the back surface of a semiconductor wafer. The 138824.doc -15- 200952058 adhesion of the adhesive sheet 10.2 N/25 mm Comparative Example 1 Polyethylene terephthalate was used as the resin for the substrate. Ethylene acetate ethyl acetate copolymer resin having a hardness of 38 JIS_A was used as the resin for an intermediate layer. & 'Laminating a substrate having a thickness of 38 μm and an intermediate layer having a thickness of 450 μm by a lamination method. Corona is then performed on the surface of the intermediate layer on which the adhesive layer is provided. Processing, and transferring an adhesive layer having a thickness of 40 μm to the corona-treated surface of the intermediate layer. After transfer, 'heating under hunger for 24 hours, followed by cooling to room temperature' thereby obtaining a semiconductor crystal for grinding Adhesive sheet on the back of the circle. The adhesion of the adhesive sheet is 7 4 n/25 mm. Comparative Example 2

使用聚對苯二甲酸乙二醋作爲用於—基板之樹脂。使用 -有58 JIS-A硬度之乙稀_乙酸乙g旨共聚物樹脂作爲用於一 中間層之樹脂。由&’藉由層疊法製得具有38微米之厚度 的基板與具有280微米之厚度的中間層之層積體。接著， 在其上提供有該黏著層t中間層之表面上進行電暈處理， 且將具有25微米之厚度的黏著層轉移至該中間層的經電暈 處理表面。轉移後，在45。〇下加熱24小時，接著冷卻至室 溫’藉此獲得用於研磨一半導體晶圓背面之黏著片材。該 黏著片材的黏著力為4.8 N/25 mm。 對比實例3 使用聚對苯二曱酸乙二酯作爲用於一基板之樹脂。使用 具有38 JIS-A硬度之乙稀-乙酸乙醋共聚物樹脂作爲用於一 138824.doc -16- 200952058 中間層之樹脂。由此，藉由層疊法製得具有38微米之厚度 的基板與具有250微米之厚度的中間層之層積體。接著， 在其上提供有該黏著層之甲間層之表面上進行電暈處理， 且將具有20微米之厚度的黏著層轉移至該中間層的經電暈 處理表面。轉移後，在45°C下加熱24小時，接著冷卻至室 溫，藉此獲得用於研磨一半導體晶圓背面之黏著片材。該 黏著片材的黏著力為4.2 N/25 mm。Polyethylene terephthalate was used as the resin for the substrate. A resin having a J J-A hardness of ethylene-acetate copolymer was used as the resin for an intermediate layer. A laminate having a thickness of 38 μm and an intermediate layer having a thickness of 280 μm was obtained by a lamination method by & Next, a corona treatment was performed on the surface of the intermediate layer on which the adhesive layer t was provided, and an adhesive layer having a thickness of 25 μm was transferred to the corona-treated surface of the intermediate layer. After the transfer, at 45. The underarm was heated for 24 hours, followed by cooling to room temperature, whereby an adhesive sheet for polishing the back surface of a semiconductor wafer was obtained. The adhesive sheet has an adhesive force of 4.8 N/25 mm. Comparative Example 3 Polyethylene terephthalate was used as a resin for a substrate. A vinyl acetate-acetic acid copolymer resin having a hardness of 38 JIS-A was used as the resin for the intermediate layer of 138824.doc -16-200952058. Thus, a laminate of a substrate having a thickness of 38 μm and an intermediate layer having a thickness of 250 μm was obtained by a lamination method. Next, a corona treatment was performed on the surface of the inter-layer layer on which the adhesive layer was provided, and an adhesive layer having a thickness of 20 μm was transferred to the corona-treated surface of the intermediate layer. After the transfer, heating was carried out at 45 ° C for 24 hours, followed by cooling to room temperature, whereby an adhesive sheet for polishing the back surface of a semiconductor wafer was obtained. The adhesive sheet has an adhesion of 4.2 N/25 mm.

此等實例及對比實例中該黏著片材之組成及黏著力之測 量結果係顯示於表1中。 表1 基板薄膜 熱塑性樹脂 黏著層 材料 厚度 (微米） 材料 厚度 (微米） JIS-A 硬度 厚度 (微米） 黏著力 (N/25 mm) 實例1 PET 38 EVA 450 60 35 8.5 實例2 PET 38 EVA 500 68 35 9.2 實例3 PET 38 EVA 350 60 45 6.3 實例4 PET 38 EVA 550 72 45 10.2 對比實例1 PET 38 EVA 450 38 40 7.4 對比實例2 PET 38 EVA 280 58 25 4.8 對比實例3 PET 38 EVA 250 38 20 4.2 此外，在研磨該半導體晶圓背面後，檢驗水侵入該黏著 片材與該晶圓表面之間之存在或不存在，及由研磨該晶圓 背面引起的晶圓破裂之存在或不存在。研磨後該晶圓之最 大厚度與最小厚度之間的差值係作為平面中厚度精度。差 值為20微米或更大之情況被評估為具有實際問題。其之結 果係顯示於表2中。 138824.doc -17- 200952058 表2 研磨期間晶圓破裂 研磨期間水侵入 平面厚度精密度 (微米） 實例1 未觀察到 未觀察到水侵入 14 實例2 未觀察到 未觀察到水侵入 17 實例3 未觀察到 未觀察到水侵入 16 實例4 未觀察到 未觀察到水侵入 17 對比實例1 未觀察到 未觀察到水侵入 28 對比實例2 觀察到 觀察到水侵入 15 對比實例3 觀察到 觀察到水侵入 25 雖然已參考本發明之具體實施例詳細描述本發明，但熟 習此項技術者將顯而易見在未背離本發明範圍下可進行各 種改變及修飾。 本申請案係基於2008年2月29曰申請之日本專和申請案 第2008-049878號，該案之全文係以引用的方式併入本文 中〇 此外，文中引用的所有參考均併入其等之全文中。 【圖式簡單說明】 圖1係一顯示用於研磨本發明之一半導體晶圓背面之黏著 片材之圖，該黏著片材黏附於該半導體晶圓的電路表面。 【主要元件符號說明】 基板 中間層 黏著層 用於研磨半導體晶圓背面之黏著片材 半導體晶圓之電路表面 半導體晶圓 1 2 3 4 5 6 138824.doc -18-The measurement results of the composition and adhesion of the adhesive sheet in these examples and comparative examples are shown in Table 1. Table 1 Substrate film thermoplastic resin adhesive layer material thickness (micron) material thickness (micron) JIS-A hardness thickness (micron) adhesion (N / 25 mm) Example 1 PET 38 EVA 450 60 35 8.5 Example 2 PET 38 EVA 500 68 35 9.2 Example 3 PET 38 EVA 350 60 45 6.3 Example 4 PET 38 EVA 550 72 45 10.2 Comparative example 1 PET 38 EVA 450 38 40 7.4 Comparative example 2 PET 38 EVA 280 58 25 4.8 Comparative example 3 PET 38 EVA 250 38 20 4.2 In addition, after polishing the back surface of the semiconductor wafer, the presence or absence of water intrusion between the adhesive sheet and the surface of the wafer is examined, and the presence or absence of wafer rupture caused by polishing the back surface of the wafer. The difference between the maximum thickness and the minimum thickness of the wafer after grinding is taken as the in-plane thickness accuracy. Cases with a difference of 20 microns or more were evaluated as having practical problems. The results are shown in Table 2. 138824.doc -17- 200952058 Table 2 Water intrusion plane thickness precision (micron) during wafer rupture during grinding Example 1 No observed water intrusion was observed 14 Example 2 No observed water intrusion was observed 17 Example 3 No water intrusion was observed. 16 Example 4 No water intrusion was observed. 17 Comparative Example 1 No water intrusion was observed. 28 Comparative Example 2 Observed water intrusion was observed. Comparative Example 3 Observed water intrusion was observed. Although the present invention has been described in detail with reference to the preferred embodiments of the invention, it will be understood that The present application is based on Japanese Patent Application No. 2008-049878, filed on Feb. 29, 2008, the entire content of which is hereby incorporated by reference, inco In the full text. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a view showing an adhesive sheet for polishing a back surface of a semiconductor wafer of the present invention, the adhesive sheet being adhered to a circuit surface of the semiconductor wafer. [Main component symbol description] Substrate Intermediate layer Adhesive layer Used to polish the adhesive sheet on the back side of the semiconductor wafer. The circuit surface of the semiconductor wafer. Semiconductor wafer 1 2 3 4 5 6 138824.doc -18-

Claims (1)

200952058 七、申請專利範圍： • 1. -種用於研磨一半導體晶圓背面之黏著片材，其在研磨 該半導體晶圓背面時黏附於該半導體晶圓之—電路形成 表面； V ❹2 -中該黏著片材從该電路形成表面側按此順序包含一 黏著層、一中間層及一基板； 其中該中間層具有大於55至小於8〇2JIS_a硬度；及 其中該中間層具有300微米至6〇〇微米之厚度。 如請求項1之黏著片材，其中該中間層包括選自由以下 所組成群的至少一成分：具有小於〇 89 g/cm3之密度之 低密度聚乙烯；具有30至50重量％之乙酸乙酯含量之乙 烯-乙酸乙酯共聚物；及具有3〇至5〇重量％之丙烯酸烷基 醋單元含量之乙烯-丙烯酸烷基酯共聚物，其中，該烷基 具有1至4個碳原子。 3. 如請求項1之黏著片材’其中該黏著層包括丙烯酸系黏 Θ 4. 著劑。 如請求項1之黏著片材，其中該黏著層具有30微米至6〇 微米之厚度。 > 5. 如請求項1之黏著片材，其中該黏著片材具有5至15 n/25 mm之黏著力。 6. 一種用於研磨一半導體晶圓背面之方法，其包括將如請 求項1之黏著片材黏附於該半導體晶圓的一電路形成表 面’接著研磨該半導體晶圓背面。 138824.doc200952058 VII. Patent application scope: 1. 1. An adhesive sheet for polishing a back surface of a semiconductor wafer, which adheres to a circuit forming surface of the semiconductor wafer when grinding the back surface of the semiconductor wafer; V ❹ 2 - The adhesive sheet comprises, in this order from the circuit forming surface side, an adhesive layer, an intermediate layer and a substrate; wherein the intermediate layer has a hardness of more than 55 to less than 8 〇 2 JIS_a; and wherein the intermediate layer has 300 μm to 6 〇 〇Micron thickness. The adhesive sheet of claim 1, wherein the intermediate layer comprises at least one component selected from the group consisting of low density polyethylene having a density of less than 〇89 g/cm3; and ethyl acetate having 30 to 50% by weight An ethylene-ethyl acetate copolymer having a content; and an ethylene-alkyl acrylate copolymer having an alkyl acrylate unit content of from 3 to 5 % by weight, wherein the alkyl group has from 1 to 4 carbon atoms. 3. The adhesive sheet of claim 1, wherein the adhesive layer comprises an acrylic adhesive 4. a coating agent. The adhesive sheet of claim 1, wherein the adhesive layer has a thickness of from 30 micrometers to 6 micrometers. > 5. The adhesive sheet of claim 1, wherein the adhesive sheet has an adhesive force of 5 to 15 n/25 mm. A method for polishing a back surface of a semiconductor wafer, comprising: adhering an adhesive sheet of claim 1 to a circuit forming surface of the semiconductor wafer and subsequently grinding the back surface of the semiconductor wafer. 138824.doc
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