TW200951717A - Memory system - Google Patents

Memory system

Info

Publication number
TW200951717A
TW200951717A TW98105523A TW98105523A TW200951717A TW 200951717 A TW200951717 A TW 200951717A TW 98105523 A TW98105523 A TW 98105523A TW 98105523 A TW98105523 A TW 98105523A TW 200951717 A TW200951717 A TW 200951717A
Authority
TW
Taiwan
Prior art keywords
management information
storing unit
storage position
pointer
memory system
Prior art date
Application number
TW98105523A
Other languages
English (en)
Other versions
TWI418983B (zh
Inventor
Junji Yano
Hidenori Matsuzaki
Kosuke Hatsuda
Shigehiro Asano
Shinichi Kanno
Toshikatsu Hida
Original Assignee
Toshiba Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2008051267A external-priority patent/JP2009211188A/ja
Priority claimed from JP2008051378A external-priority patent/JP2009211202A/ja
Application filed by Toshiba Kk filed Critical Toshiba Kk
Publication of TW200951717A publication Critical patent/TW200951717A/zh
Application granted granted Critical
Publication of TWI418983B publication Critical patent/TWI418983B/zh

Links

Classifications

    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02—Addressing or allocation; Relocation
    • G06F12/0223—User address space allocation, e.g. contiguous or non contiguous base addressing
    • G06F12/023—Free address space management
    • G06F12/0238—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory
    • G06F12/0246—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory in block erasable memory, e.g. flash memory
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/14—Error detection or correction of the data by redundancy in operation
    • G06F11/1402—Saving, restoring, recovering or retrying
    • G06F11/1446—Point-in-time backing up or restoration of persistent data
    • G06F11/1448—Management of the data involved in backup or backup restore
    • G06F11/1451—Management of the data involved in backup or backup restore by selection of backup contents
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02—Addressing or allocation; Relocation
    • G06F12/06—Addressing a physical block of locations, e.g. base addressing, module addressing, memory dedication
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F13/00—Interconnection of, or transfer of information or other signals between, memories, input/output devices or central processing units
    • G06F13/14—Handling requests for interconnection or transfer
    • G06F13/16—Handling requests for interconnection or transfer for access to memory bus
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5628—Programming or writing circuits; Data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/102—External programming circuits, e.g. EPROM programmers; In-circuit programming or reprogramming; EPROM emulators
    • G11C16/105—Circuits or methods for updating contents of nonvolatile memory, especially with 'security' features to ensure reliable replacement, i.e. preventing that old data is lost before new data is reliably written
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/20—Memory cell initialisation circuits, e.g. when powering up or down, memory clear, latent image memory
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/14—Error detection or correction of the data by redundancy in operation
    • G06F11/1402—Saving, restoring, recovering or retrying
    • G06F11/1471—Saving, restoring, recovering or retrying involving logging of persistent data for recovery
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
    • G06F2212/72—Details relating to flash memory management
    • G06F2212/7207—Details relating to flash memory management management of metadata or control data

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Computer Security & Cryptography (AREA)
  • Quality & Reliability (AREA)
  • Human Computer Interaction (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Read Only Memory (AREA)
  • Information Retrieval, Db Structures And Fs Structures Therefor (AREA)
TW98105523A 2008-02-29 2009-02-20 記憶體系統及控制記憶體系統之方法 TWI418983B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2008051267A JP2009211188A (ja) 2008-02-29 2008-02-29 メモリシステム
JP2008051378A JP2009211202A (ja) 2008-02-29 2008-02-29 メモリシステム

Publications (2)

Publication Number Publication Date
TW200951717A true TW200951717A (en) 2009-12-16
TWI418983B TWI418983B (zh) 2013-12-11

Family

ID=41602091

Family Applications (1)

Application Number Title Priority Date Filing Date
TW98105523A TWI418983B (zh) 2008-02-29 2009-02-20 記憶體系統及控制記憶體系統之方法

Country Status (6)

Country Link
US (3) US8438343B2 (zh)
EP (2) EP2111583A4 (zh)
KR (1) KR101103110B1 (zh)
CN (1) CN101681313A (zh)
TW (1) TWI418983B (zh)
WO (1) WO2009107506A1 (zh)

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* Cited by examiner, † Cited by third party
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JP2009211215A (ja) * 2008-03-01 2009-09-17 Toshiba Corp メモリシステム
US8219781B2 (en) 2008-11-06 2012-07-10 Silicon Motion Inc. Method for managing a memory apparatus, and associated memory apparatus thereof
CN101887461A (zh) * 2010-06-29 2010-11-17 苏州佳世达电通有限公司 档案存取方法及其电子装置
JP2012128643A (ja) 2010-12-15 2012-07-05 Toshiba Corp メモリシステム
JP2012128816A (ja) 2010-12-17 2012-07-05 Toshiba Corp メモリシステム
US9092486B2 (en) * 2014-01-02 2015-07-28 Advanced Micro Devices, Inc. Extensible I/O activity logs
US10430092B1 (en) * 2014-07-28 2019-10-01 Rambus Inc. Memory controller systems with nonvolatile memory for storing operating parameters
EP3385846B1 (en) * 2015-12-30 2020-02-12 Huawei Technologies Co., Ltd. Method and device for processing access request, and computer system
CN108431783B (zh) 2015-12-30 2020-09-18 华为技术有限公司 访问请求处理方法、装置及计算机系统
CN106897338A (zh) 2016-07-04 2017-06-27 阿里巴巴集团控股有限公司 一种针对数据库的数据修改请求处理方法及装置
KR20180030319A (ko) * 2016-09-13 2018-03-22 에스케이하이닉스 주식회사 메모리 시스템 및 메모리 시스템의 동작방법
KR20180030329A (ko) * 2016-09-13 2018-03-22 에스케이하이닉스 주식회사 메모리 시스템 및 메모리 시스템의 동작방법
KR20190004094A (ko) * 2017-07-03 2019-01-11 에스케이하이닉스 주식회사 메모리 시스템 및 메모리 시스템의 동작방법
CN108376121B (zh) * 2018-03-01 2021-10-22 曲阜师范大学 一种Flash存储器的数据存储方法
CN111181874B (zh) * 2018-11-09 2023-10-10 深圳市中兴微电子技术有限公司 一种报文处理方法、装置及存储介质
CN114442958B (zh) * 2022-01-28 2023-08-11 苏州浪潮智能科技有限公司 一种分布式存储系统的存储优化方法及装置

Family Cites Families (17)

* Cited by examiner, † Cited by third party
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JP2778786B2 (ja) * 1990-03-02 1998-07-23 富士通株式会社 データ更新・復元処理方式
US5404485A (en) * 1993-03-08 1995-04-04 M-Systems Flash Disk Pioneers Ltd. Flash file system
JP3072722B2 (ja) 1997-06-20 2000-08-07 ソニー株式会社 フラッシュメモリを用いるデータ管理装置及びデータ管理方法並びにフラッシュメモリを用いる記憶媒体
JPH11203191A (ja) * 1997-11-13 1999-07-30 Seiko Epson Corp 不揮発性記憶装置、不揮発性記憶装置の制御方法、および、不揮発性記憶装置を制御するプログラムを記録した情報記録媒体
JP4085478B2 (ja) * 1998-07-28 2008-05-14 ソニー株式会社 記憶媒体及び電子機器システム
US6377500B1 (en) * 1999-11-11 2002-04-23 Kabushiki Kaisha Toshiba Memory system with a non-volatile memory, having address translating function
JP2003280825A (ja) 2002-03-22 2003-10-02 Fujitsu Ltd ストレージシステム
JP3935139B2 (ja) 2002-11-29 2007-06-20 株式会社東芝 半導体記憶装置
US7440966B2 (en) * 2004-02-12 2008-10-21 International Business Machines Corporation Method and apparatus for file system snapshot persistence
JP2006285600A (ja) * 2005-03-31 2006-10-19 Tokyo Electron Device Ltd 記憶装置、メモリ管理装置、メモリ管理方法及びプログラム
US7814057B2 (en) 2005-04-05 2010-10-12 Microsoft Corporation Page recovery using volume snapshots and logs
US8244958B2 (en) * 2005-05-09 2012-08-14 Sandisk Il Ltd. Method and system for facilitating fast wake-up of a flash memory system
US7509474B2 (en) * 2005-06-08 2009-03-24 Micron Technology, Inc. Robust index storage for non-volatile memory
US8055833B2 (en) * 2006-10-05 2011-11-08 Google Inc. System and method for increasing capacity, performance, and flexibility of flash storage
US7366887B2 (en) * 2005-07-11 2008-04-29 Lenovo (Singapore) Pte. Ltd. System and method for loading programs from HDD independent of operating system
JP5076411B2 (ja) * 2005-11-30 2012-11-21 ソニー株式会社 記憶装置、コンピュータシステム
US7761740B2 (en) * 2007-12-13 2010-07-20 Spansion Llc Power safe translation table operation in flash memory

Also Published As

Publication number Publication date
TWI418983B (zh) 2013-12-11
US20130290659A1 (en) 2013-10-31
US20140208013A1 (en) 2014-07-24
KR20090117926A (ko) 2009-11-16
EP2111583A1 (en) 2009-10-28
US8438343B2 (en) 2013-05-07
WO2009107506A1 (en) 2009-09-03
US8738867B2 (en) 2014-05-27
US9043564B2 (en) 2015-05-26
KR101103110B1 (ko) 2012-01-04
US20110185107A1 (en) 2011-07-28
CN101681313A (zh) 2010-03-24
EP2111583A4 (en) 2010-06-02
EP2309392A1 (en) 2011-04-13

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Legal Events

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MM4A Annulment or lapse of patent due to non-payment of fees