200945539 九、發明說明： 【發明所屬之技術領域】 本發明是有關於一種感應裝置封裝件，且特別是有關 於一種導通靜電之感應裝置封裝件。 【先前技術】 靜電放電（Electrostatic Discharge, ESD)在短時 間内形成大電流，可能在數個奈秒（ns)内就有幾安培的 ❿電流產生，因此會容易造成積體電路晶片的永久損壞。 所以需要有適當的保護裝置來提供放電路徑以保護晶 片。 感應裝置封裝件係被廣泛地應用在許多電子裝置 上，例如筆記型電腦上之指紋辨識器。感應裝置封裝件 經4因使用者的碰觸或是與其它物體摩擦而產生靜電， 若靜電累積過多造成電壓上升至產生靜電放電現象時， 就會發生上述提及的晶片及電路損害。BACKGROUND OF THE INVENTION 1. Field of the Invention This invention relates to an inductive device package, and more particularly to an inductive device package that conducts static electricity. [Prior Art] Electrostatic discharge (ESD) generates a large current in a short period of time, and may generate a few amperes of erbium current in a few nanoseconds (ns), which may easily cause permanent damage of the integrated circuit chip. . Therefore, it is necessary to have a suitable protection device to provide a discharge path to protect the wafer. Inductive device packages are widely used in many electronic devices, such as fingerprint readers on notebook computers. The sensing device package generates static electricity due to the user's touch or friction with other objects. If the voltage is increased due to excessive static electricity to cause electrostatic discharge, the above-mentioned wafer and circuit damage may occur.
® 目前的技術中，大多數消除靜電的方法，都是以IC 佈局的6又δ*}*來改善，亦即使用增加靜電放電的設計來保 護電路。或者，在感應晶片的鄰近處設置錫球，錫球並 與接地端電性連接，在待感應物接觸或滑過感應晶片時， 使得因摩擦產生的靜電能有效地被錫球導通至接地端。 然而’無論是以1C佈局的方式或製作錫球的方式 來導通靜電，都需要多道較繁複的半導體製程，因此導 致成本上升，且製程變得較複雜。 5 200945539 【發明内容】 有鑑於此，本發明就是在提供一種導通靜電之感 置封裝件，設置-導電條’其位置係鄰近於一感應晶^， 使付-待感應物上之靜電藉由導電條導通至接地端， 止瞬間大電流損害感晶片及其它電路。本發明具有製程 易，成本低廉之優點。 根據本發明之-方面，提出一種感應裝置封裝件，包 ❹括一基板、一感應晶片及一第一導電條。感應晶片係盘基 板電性連接。第-導電條係鄰近於感應晶片並與基板電二 連接。 為讓本發明之上述内容能更明顯易懂，下文特舉一較 佳實施例，並配合所附圖式，作詳細說明如下： 【實施方式】 本發明提出一種導通靜電之感應裝置封裝件。感應裝 置封裝件包括-基板、一感應晶片及一導電條。感應晶片 係與基板電性連接。導電條係鄰近於感應晶片並與基板電 性，接。當-待感應物接近感應晶片日寺，待感應物上之靜 電藉由導電條導通至接地端，以防止瞬間大電流損害感晶 片及其它電路。以下係舉出一較佳實施例做詳細說明然 此實施例僅為本發明之發明精神下的幾種實施方式之 ，其說明之文字與圖示並不會對本發明之欲保護範圍進 行限縮。 6 200945539 請參照第1圖，其緣示依照本發明較佳實施例之感應 裝置封裝件之上視圖。感應裝置封褒件1〇〇包括一基板 102、-感應晶片1Q4及—第—導電條1()6。感應晶片ι〇4 係與基板102 t性連接’錢晶#1〇4並具有一主動區 105。第-導電條iG6係鄰近於感應晶片⑽並與基板1〇2 電性連接。另外，第-導電條1〇6之延伸方向係實質上平 行於感應晶片1G4之延伸方向。且感應晶片1()4與基板1〇2 係藉由至少-第一金線⑽電性連接，在本實施例中感 ®應晶片104之兩端皆藉由第一金線1〇8與基板ι〇2電性連 接。此外，第-導電條106與基板1〇2係藉由一第二金線 110電性連接。 當待感應物接觸或滑過感應晶片1G4時，待感應物上 之靜電會由第-導電條⑽被導通至接地端。如此，避免 靜電對感應裝置封裝件⑽内部之電路或是感應晶片1〇4 放電而造成損害。 另外’感應裝置封裝件100更包括一第二導電條 第¥電條106及第二導電條112係'分別配置於感 應^ H)4之兩側。同樣地’第二導電條112與基板1〇2 二=第二金線114電性連接。由於兩條導電條的設 置，提供了更大的靜電導通範圍。 舉例來說，如第i圖所示，第一導電條1〇6之一端係 :感應晶片104之一端實質上切齊，第二導電條ιΐ2之一 =與感應晶104之另-端實f上切齊，如此，使得第 一導電條⑽靠左，而第二導電條112靠右，因此可以進 7 200945539 一步地擴大靜電導通範圍。而且’第一導電條之長度 及第二導電條112之長度係大於感應晶片1〇4之長度之 半。如此，當待感應物在進行感應時，可以接觸到第一導 電條106與第二導電條Π2至少其中一者，使得待感應物 上的靜電都能被導通至接地端而不會被遺漏掉。 請參照第2圖，其繪示第1圖中之第一導電條之沿著 D1方向之前視圖。第一導電條1 〇6較佳地包括一晶圓切條 116及一金屬層Π8，金屬層118係配置於晶圓切條116 ❹之上表面，金屬層118與基板102係藉由第二金線11〇電 性連接（第二金線110繪示於第1圖中）。同樣，第二導電 條112也包括了晶圓切條及金屬層’且第二導電條112之 金屬層與基板102係藉由第三金線丨^(第三金線114繪示 於第1圖中）電性連接。較佳地，金屬層之材質係為導電 性較佳的鋁。 由於晶圓切條的來源取得容易，即使是報廢的晶圓都 可以拿來製成晶圓切條，然後再將金屬層形成於晶圓切條 參之上表面。並且，形成金屬層的方法可以是各種表面處理 ，術，例如是電鍍或塗層。而晶圓製程本身係具有尺寸精 密的特性，故每一製成的晶圓切條的尺寸差異性甚小。因 此，在將第一導電條及第二導電條設置於感應裝置封裝件 上時，製程的控制相當容易。所以，製作第一導電條與第 二導電條並不需要進行複雜的半導體製程，只要以一般晶 圓切割技術就可以製作晶圓切條，使得整體的製程簡化: 多0 8 200945539 請參照第3圖並同時參照第i圖，第3圖緣示第i圖 之感應裝置封裝件之沿著耵方向之前視圖。感應裝置封 裝件1〇〇更包括一封膠120,覆蓋住至少一第一金線1〇8、 第一金線110、第二金線114、部分之感應晶片1〇4、一部 分之第-導電條106及一部分之第二導電條112，並露出 感應晶片104之主動區105，較佳地只露出主動區1〇5， 並且露出另-部份之第一導電條1〇6與另一部份之第二導 電條112，此另一部份之第一導電條1〇6與另一部份之第 ⑩二導電條112係鄰近於感應晶片1〇4之主動區1〇5之一 側。當然地，主動區105、第一導電條1〇6及第二導電條 U2所露出的範圍大小’視感應晶片1〇4所提供的功能及 待感應物的大小而定，較佳地實質上為待感應物之大小。 例如，感應晶片104為-指紋感應晶片1〇4時，待感應物 則為-手指122之指端，所以主動區1〇5、第一導電條⑽ 及第二導電條112中露出於封膠12G之範圍大約是手指 122之指端的面積’如第4圖所示，其繪示手指接受本實 響施例之感應裝置封裝件感應時之示意圖。 另外，請再參照第3圖，紐1〇2之底面係具有複數 個錫球124，用以與外部之一電路板（未繪示）電性連接， =錫球124至少-者係與電路板之接地端電性連接。也 就疋說’來自於待感應物之靜電可藉由基板與電路板的電 性連接而被導通至與電路板電性連接之接地端。 在本實施例中，第一導電條106與第二導電條112之 長度大於感應晶片104之長度之半。然於其它實施例中， 9 200945539 第-導電條與第二導電條的長度並不受第i圖緣製的第一 導電條與第二導電條的長度所限制。請參照第5圖，其繪 示另一實施例之感應裝置封裝件之上視圖。感應晶片2〇〇 包括-第-導電條202與一第二導電條2〇4，第一導電條 202與第二導電條2〇4之長度實質上等於感應晶片之長度。 或者可以不用兩條導電條，只要一條導電條也可以 達到本實施例之導通靜電之效果。例如，請參照第6圖， 其繪示再一實施例之感應裝置封裝件之上視圖。於此實施 •例中’感應裝置封襄件3〇〇只配置有一條導電條，即一第 =導電條3 G1 °然只要封膠3 〇 2露出-感應晶片3 〇 4及第 導電條3G1的部份能使待感應物碰觸的到，就能使待感 應物亡之靜電被導通至接地端。又例如請參照第7圖， 其繪示第6圖中更—實施例之感應裝置封裝件之上視圖。 ^此實施例中’第—導電條備之長度實質上等於一感應 晶片404之長度’同樣地，只要封膠4〇6露出感應晶片4〇4 及第導電條402的部份能使待感應物碰觸的到，就能使 待感應物上之靜電被導通至接地端。 在第1圖中，雖然第一導電條106位於感應晶片1〇4 之上側，而第二導電條112位於感應晶片1〇4之下侧，然 而，在其它實施例中，只要封膠露出感應晶片、第一導電 條及第二導電條的部份能使待感應物碰觸的到即可，第一 導，，與第二導電條的位置並不受第1圖緣製的所限制。 也就疋說’第1圖中第一導電條與第二導電條的位置可以 對調。相同地，在第6圖中第-導電條301與及第7圖中 200945539 第一導電條402之位置也可以在感應晶片的下側。 本發明上述實施例所揭露之導通靜電之感應裝置封 裝件，藉由使用長條形之導電條，本發明具有容易製造， 製程簡單快速，成本低廉之優點。特別地，當利用取得容 易的晶圓來製成晶圓切條，然後再利用簡單的表面處理技 術製作金屬層於晶圓切條上時，本發明更具有導電條設置 於感應裝置封裝件上的配置精度高、製程控制容易之優 點。並且，導電條之完成不需要進行複雜的半導體製程， ❿ 只要以一般晶圓切割技術就可以製成晶圓切條，使得整體 的製程更簡化許多。 綜上所述，雖然本發明已以一較佳實施例揭露如上， 然其並非用以限定本發明。本發明所屬技術領域中具有通 常知識者，在不脫離本發明之精神和範圍内，當可作各種 之更動與潤飾。因此，本發明之保護範圍當視後附之申請 專利範圍所界定者為準。 200945539 , * *» ~Τ-/ ^ va. j & 【圖式簡單說明】 第1圖繪示依照本發日她佳實_之錢裝置封裝 件之上視圖。 第2圖繪示第1圖中之第一導電條之沿著D1方向之 前視圖。 第3圖繪示第1圖之感應裝置封裝件之沿著Di方向 之前視圖。 第4圖繪示手指接受本實施例之感應裝置封裝件感 • 應時之示意圖。 第5圖繪示另一實施例之感應裝置封裝件之上視圖。 第6圖繪示再一實施例之感應裝置封裝件之上視圖。 第7圖繪示第6圖中更一實施例之感應裝置封裝件之 上視圖。 【主要元件符號說明】 100、200、300、400 :感應晶片封裝件 102 :基板 104、304 :感應晶片 105 :主動區 106、202、402、301 :第一導電條 108 :第一金線 110 :第二金線 112、204、404 :第二導電條 114 :第三金線 200945539 116 .晶圓切條 118 :金屬層 120、302、406 :封膠 122 :手指 D1 :方向® In the current technology, most of the methods to eliminate static electricity are improved by the 6 δ*}* of the IC layout, that is, the design that increases the electrostatic discharge is used to protect the circuit. Alternatively, a solder ball is disposed adjacent to the sensing wafer, and the solder ball is electrically connected to the ground end, so that the static electricity generated by the friction can be effectively conducted to the ground by the solder ball when the object to be inductive contacts or slides over the sensing wafer. . However, whether the static electricity is turned on in a 1C layout or in the form of a solder ball requires a complicated semiconductor process, which leads to an increase in cost and a complicated process. 5 200945539 SUMMARY OF THE INVENTION In view of the above, the present invention is to provide a sensing device for conducting static electricity, and the arrangement of the conductive strips is adjacent to an inductive crystal, so that the static electricity on the anti-inductive object is used. The conductive strips are conducted to the ground, and the high current damage to the wafer and other circuits is instantaneous. The invention has the advantages of easy process and low cost. According to an aspect of the invention, an inductive device package is provided, comprising a substrate, a sensing wafer and a first conductive strip. The inductive chip tether base is electrically connected. The first conductive strip is adjacent to the sensing wafer and is electrically connected to the substrate. In order to make the above-mentioned contents of the present invention more comprehensible, a preferred embodiment will be described below in conjunction with the accompanying drawings, and the following description will be made in detail: [Embodiment] The present invention provides an inductive device package for conducting static electricity. The inductive device package includes a substrate, a sensing wafer, and a conductive strip. The sensing chip is electrically connected to the substrate. The conductive strip is adjacent to the sensing wafer and electrically connected to the substrate. When the -to-be inductive object approaches the induction wafer, the static electricity on the object to be sensed is conducted to the ground through the conductive strip to prevent an instantaneous large current from damaging the sensor and other circuits. The following is a detailed description of the preferred embodiments. However, the embodiments are merely illustrative of the embodiments of the present invention, and the description and illustrations are not intended to limit the scope of the present invention. . 6 200945539 Please refer to FIG. 1 for a top view of an inductive device package in accordance with a preferred embodiment of the present invention. The sensing device package 1 includes a substrate 102, an inductive wafer 1Q4, and a first conductive strip 1 () 6. The sensing wafer ι 4 is t-connected to the substrate 102 ’ 晶晶#1〇4 and has an active region 105. The first conductive strip iG6 is adjacent to the sensing wafer (10) and electrically connected to the substrate 1〇2. Further, the extending direction of the first conductive strips 1?6 is substantially parallel to the extending direction of the sensing wafer 1G4. And the sensing chip 1() 4 and the substrate 1〇2 are electrically connected by at least the first gold wire (10). In the embodiment, the sensing chip should be both ends of the wafer 104 by the first gold wire 1〇8 and The substrate 〇2 is electrically connected. In addition, the first conductive strip 106 and the substrate 1〇2 are electrically connected by a second gold wire 110. When the object to be inductively contacts or slides over the sensing wafer 1G4, the static electricity on the object to be sensed is conducted to the ground by the first conductive strip (10). In this way, the static electricity is prevented from being damaged by the discharge of the circuit inside the sensing device package (10) or the sensing wafer 1〇4. In addition, the sensing device package 100 further includes a second conductive strip, and the second conductive strips 106 and the second conductive strips 112 are disposed on opposite sides of the sensing layer H, respectively. Similarly, the second conductive strip 112 is electrically connected to the substrate 1〇2=the second gold line 114. Due to the arrangement of the two conductive strips, a greater electrostatic conduction range is provided. For example, as shown in FIG. 1 , one end of the first conductive strip 1 〇 6 is: one end of the sensing wafer 104 is substantially aligned, and one of the second conductive strips ι 2 is opposite to the other end of the sensing crystal 104 The upper alignment is such that the first conductive strip (10) is to the left and the second conductive strip 112 is to the right, so that the electrostatic conduction range can be expanded step by step in the manner of 7 200945539. Moreover, the length of the first conductive strip and the length of the second conductive strip 112 are greater than half the length of the sensing wafer 1〇4. In this way, when the object to be inductive is inductive, at least one of the first conductive strip 106 and the second conductive strip 2 can be contacted, so that the static electricity on the object to be sensed can be turned on to the ground without being missed. . Please refer to FIG. 2, which is a front view of the first conductive strip in FIG. 1 along the direction D1. The first conductive strip 1 〇6 preferably includes a wafer strip 116 and a metal layer ,8. The metal layer 118 is disposed on the upper surface of the wafer strip 116, and the metal layer 118 and the substrate 102 are second. The gold wire 11 is electrically connected (the second gold wire 110 is shown in Fig. 1). Similarly, the second conductive strip 112 also includes a wafer strip and a metal layer ' and the metal layer of the second conductive strip 112 and the substrate 102 are formed by the third gold line ( ^ (the third gold line 114 is shown in the first In the figure) electrical connection. Preferably, the material of the metal layer is aluminum which is preferably electrically conductive. Since the source of the wafer strip is easy to obtain, even a scrapped wafer can be used to form a wafer strip, and then a metal layer is formed on the upper surface of the wafer strip. Also, the method of forming the metal layer may be various surface treatments such as electroplating or coating. The wafer process itself is characterized by its compact size, so the size of the wafer strips produced is very small. Therefore, when the first conductive strip and the second conductive strip are disposed on the sensing device package, the control of the process is relatively easy. Therefore, the fabrication of the first conductive strip and the second conductive strip does not require a complicated semiconductor process, as long as the wafer cutting process can be performed by the general wafer cutting technique, so that the overall process is simplified: more 0 8 200945539 Please refer to the 3rd Referring to Figure ii at the same time, Figure 3 shows a front view of the sensing device package of Figure i along the 耵 direction. The sensing device package 1 further includes an adhesive 120 covering at least one first gold wire 1〇8, a first gold wire 110, a second gold wire 114, a portion of the sensing wafer 1〇4, a part of the first- The conductive strip 106 and a portion of the second conductive strip 112 expose the active region 105 of the sensing wafer 104, preferably only the active region 1〇5, and expose the other portion of the first conductive strip 1〇6 and another a portion of the second conductive strip 112, the other portion of the first conductive strip 1〇6 and the other portion of the 10th conductive strip 112 are adjacent to one of the active regions 1〇5 of the sensing wafer 1〇4 side. Of course, the extent of the active area 105, the first conductive strips 1〇6, and the second conductive strips U2 is determined by the function provided by the sensing chip 1〇4 and the size of the object to be sensed, preferably substantially It is the size of the object to be sensed. For example, when the sensing chip 104 is a fingerprint sensing chip 1〇4, the object to be inductive is the finger end of the finger 122, so the active area 1〇5, the first conductive strip (10) and the second conductive strip 112 are exposed in the sealing material. The range of 12G is approximately the area of the finger end of the finger 122, as shown in Fig. 4, which is a schematic diagram showing the sensing of the sensing device package of the finger receiving the embodiment. In addition, please refer to FIG. 3 again. The bottom surface of the button 1 has a plurality of solder balls 124 for electrically connecting with an external circuit board (not shown), and the solder ball 124 is at least a circuit and a circuit. The ground terminal of the board is electrically connected. It is also said that the static electricity from the object to be sensed can be electrically connected to the ground end electrically connected to the circuit board by the electrical connection between the substrate and the circuit board. In this embodiment, the length of the first conductive strip 106 and the second conductive strip 112 is greater than half the length of the sensing wafer 104. However, in other embodiments, the length of the first conductive strip and the second conductive strip of 9 200945539 is not limited by the length of the first conductive strip and the second conductive strip made by the i-th image. Referring to Figure 5, there is shown a top view of another embodiment of the sensing device package. The sensing chip 2A includes a -first conductive strip 202 and a second conductive strip 2〇4, and the lengths of the first conductive strip 202 and the second conductive strip 2〇4 are substantially equal to the length of the sensing wafer. Alternatively, two conductive strips may be omitted, as long as one conductive strip can also achieve the effect of conducting static electricity in this embodiment. For example, please refer to FIG. 6 , which illustrates a top view of the sensing device package of still another embodiment. In this embodiment, the 'inductive device sealing member 3 〇〇 is only provided with one conductive strip, that is, one = conductive strip 3 G1 ° as long as the sealant 3 〇 2 is exposed - the sensing chip 3 〇 4 and the first conductive strip 3G1 The part that allows the inductive object to touch can cause the static electricity to be sensed to be conducted to the ground. For another example, please refer to FIG. 7 , which illustrates a top view of the sensing device package of the embodiment of FIG. 6 . In this embodiment, the length of the first conductive strip is substantially equal to the length of the sensing wafer 404. Similarly, as long as the sealing material 4〇6 exposes the sensing chip 4〇4 and the portion of the conductive strip 402, the portion to be sensed can be sensed. When the object touches, the static electricity on the object to be sensed can be turned on to the ground. In Fig. 1, although the first conductive strip 106 is located on the upper side of the sensing wafer 1?4, and the second conductive strip 112 is located on the lower side of the sensing wafer 1?4, in other embodiments, as long as the sealing is exposed The portion of the wafer, the first conductive strip and the second conductive strip can make the object to be inductive touched, and the positions of the first conductive strip and the second conductive strip are not limited by the first image. That is to say, the position of the first conductive strip and the second conductive strip in Fig. 1 can be reversed. Similarly, the position of the first conductive strip 301 in Fig. 6 and the first conductive strip 402 in 200945539 in Fig. 7 may also be on the lower side of the sensing wafer. The inductive device package for conducting static electricity disclosed in the above embodiments of the present invention has the advantages of easy manufacture, simple and rapid process, and low cost by using a strip-shaped conductive strip. In particular, when the wafer strip is made by taking an easy wafer, and then the metal layer is formed on the wafer strip by a simple surface treatment technique, the present invention further has a conductive strip disposed on the sensing device package. The configuration has high precision and easy process control. Moreover, the completion of the conductive strip does not require a complicated semiconductor process, and the wafer can be made into a wafer by a general wafer cutting technique, which simplifies the overall process. In view of the above, the present invention has been disclosed in a preferred embodiment, and is not intended to limit the present invention. It will be apparent to those skilled in the art that various changes and modifications can be made without departing from the spirit and scope of the invention. Therefore, the scope of the invention is defined by the scope of the appended claims. 200945539 , * *» ~Τ-/ ^ va. j & [Simple description of the diagram] Figure 1 shows the top view of the device package according to her date. Figure 2 is a front elevational view of the first conductive strip of Figure 1 taken along the direction D1. Figure 3 is a front elevational view of the sensing device package of Figure 1 taken along the Di direction. Fig. 4 is a schematic view showing the time when the finger receives the sensing device package of the embodiment. FIG. 5 is a top view of the sensing device package of another embodiment. FIG. 6 is a top view of the sensing device package of still another embodiment. Figure 7 is a top plan view of the sensing device package of a further embodiment of Figure 6. [Main component symbol description] 100, 200, 300, 400: Inductive chip package 102: Substrate 104, 304: Inductive wafer 105: Active region 106, 202, 402, 301: First conductive strip 108: First gold wire 110 : second gold wire 112, 204, 404: second conductive strip 114: third gold wire 200945539 116. wafer slit 118: metal layer 120, 302, 406: sealant 122: finger D1: direction