TW200943562A - Thin film type solar cell and method for manufacturing the same - Google Patents
Thin film type solar cell and method for manufacturing the sameInfo
- Publication number
- TW200943562A TW200943562A TW098109244A TW98109244A TW200943562A TW 200943562 A TW200943562 A TW 200943562A TW 098109244 A TW098109244 A TW 098109244A TW 98109244 A TW98109244 A TW 98109244A TW 200943562 A TW200943562 A TW 200943562A
- Authority
- TW
- Taiwan
- Prior art keywords
- thin film
- solar cell
- film type
- type solar
- electrodes
- Prior art date
Links
- 239000010409 thin film Substances 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 238000000034 method Methods 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Electromagnetism (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Sustainable Energy (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020080028187A KR101079612B1 (ko) | 2008-03-27 | 2008-03-27 | 박막형 태양전지 및 그 제조방법 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW200943562A true TW200943562A (en) | 2009-10-16 |
Family
ID=41115295
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW098109244A TW200943562A (en) | 2008-03-27 | 2009-03-20 | Thin film type solar cell and method for manufacturing the same |
Country Status (4)
Country | Link |
---|---|
US (1) | US20090242025A1 (zh) |
KR (1) | KR101079612B1 (zh) |
CN (1) | CN101546786B (zh) |
TW (1) | TW200943562A (zh) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8119901B2 (en) | 2009-11-03 | 2012-02-21 | Lg Electronics Inc. | Solar cell module having a conductive pattern part |
KR101661766B1 (ko) * | 2010-07-20 | 2016-09-30 | 엘지전자 주식회사 | 태양전지 패널 |
US9140429B2 (en) * | 2010-10-14 | 2015-09-22 | Cree, Inc. | Optical element edge treatment for lighting device |
KR101168810B1 (ko) * | 2010-10-29 | 2012-07-25 | 엘지이노텍 주식회사 | 태양광 발전장치 및 이의 제조방법 |
JP2019054166A (ja) * | 2017-09-15 | 2019-04-04 | ソーラーフロンティア株式会社 | 光電変換モジュールの製造方法 |
CN107887457A (zh) * | 2017-12-14 | 2018-04-06 | 北京铂阳顶荣光伏科技有限公司 | 一种透光太阳能电池及其制备方法 |
CN109244188A (zh) * | 2018-09-26 | 2019-01-18 | 北京铂阳顶荣光伏科技有限公司 | 一种光伏芯片的制作方法及光伏组件 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4749454A (en) * | 1986-11-17 | 1988-06-07 | Solarex Corporation | Method of removing electrical shorts and shunts from a thin-film semiconductor device |
US6265652B1 (en) * | 1995-06-15 | 2001-07-24 | Kanegafuchi Kagaku Kogyo Kabushiki Kabushiki Kaisha | Integrated thin-film solar battery and method of manufacturing the same |
JP3017422B2 (ja) * | 1995-09-11 | 2000-03-06 | キヤノン株式会社 | 光起電力素子アレー及びその製造方法 |
JP3584750B2 (ja) | 1998-09-22 | 2004-11-04 | 富士電機ホールディングス株式会社 | 薄膜太陽電池およびその製造方法 |
JP2001267618A (ja) | 2000-03-17 | 2001-09-28 | Kanegafuchi Chem Ind Co Ltd | 集積型薄膜光電変換装置の製造方法 |
JP4786010B2 (ja) | 2000-03-23 | 2011-10-05 | 株式会社カネカ | 集積型ハイブリッド薄膜太陽電池の製造方法 |
EP1320892A2 (en) * | 2000-07-06 | 2003-06-25 | BP Corporation North America Inc. | Partially transparent photovoltaic modules |
US6632993B2 (en) * | 2000-10-05 | 2003-10-14 | Kaneka Corporation | Photovoltaic module |
EP1443527A4 (en) * | 2001-10-19 | 2007-09-12 | Asahi Glass Co Ltd | SUBSTRATE WITH TRANSPARENT CONDUCTIVE OXIDE FILM AND METHOD OF MANUFACTURING THEREOF AND PHOTOELECTRIC IMPLEMENTATION ELEMENT |
JP4162516B2 (ja) * | 2003-03-14 | 2008-10-08 | 三洋電機株式会社 | 光起電力装置 |
DE602004032509D1 (de) * | 2004-01-13 | 2011-06-16 | Sanyo Electric Co | Photovoltaisches Bauelement |
JP2006332453A (ja) * | 2005-05-27 | 2006-12-07 | Sharp Corp | 薄膜太陽電池の製造方法および薄膜太陽電池 |
JP2007088280A (ja) | 2005-09-22 | 2007-04-05 | Msk Corp | 透過型太陽電池モジュール |
-
2008
- 2008-03-27 KR KR1020080028187A patent/KR101079612B1/ko active IP Right Grant
-
2009
- 2009-03-20 TW TW098109244A patent/TW200943562A/zh unknown
- 2009-03-26 US US12/383,642 patent/US20090242025A1/en not_active Abandoned
- 2009-03-27 CN CN200910131920.6A patent/CN101546786B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
CN101546786A (zh) | 2009-09-30 |
US20090242025A1 (en) | 2009-10-01 |
CN101546786B (zh) | 2012-09-26 |
KR20090102921A (ko) | 2009-10-01 |
KR101079612B1 (ko) | 2011-11-03 |
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