200940194 六、發明說明： 【發明所屬之技術領域】 本發明之實施例大致關於用以清潔表面的方法與設 備。尤其是，本發明之實施例提供了用以在半導體製程 期間’從基板或遮罩表面移除微粒的方法與設備。 【先前技術】 〇 隨著半導體元件尺寸的持續減小的趨勢，待從基板與 遮罩上移除的最小微粒尺寸亦隨之降低。舉例而言，超 紫外光微影技術（extrenie ultravi〇let Uth〇graphy，Euvl) 中，特徵尺寸可為65nm、45nm、32nm、或22nm，而微 粒尺寸限制通常為同特徵尺寸的〇 8倍一樣小。 可使用多種方法從基板或遮罩移除微粒。舉例而言， 於方法中，係以具有充足能量的雷射照射基板或遮 罩’以釋出微粒，同時將惰性氣體流過晶圓表面以帶走 ® 所釋放的微粒。於另一方法中，插沐县推由枝 万在中使能量傳遞媒介（典型為 -流體)介入各個待移除的微粒與表面之間。以雷射能量 照射媒介 > 而媒介级^ γ纪& 鄉η及收了足夠的能量產生爆發性蒸發 (explosive evaporati〇n)，進而逐出微粒。 然而，現今方法若非有應用上的限制，就是在施行上 過於複雜。 因此’仍待開發出從基板壶缺塁 极驭遮罩表面清潔小尺寸微粒 的方法與設備。 200940194 【發明内容】 本發明之實施例大致提供用以清潔基板或遮罩的設備 與方法。尤其是，本發明之實施例提供利用靜電力，從 基板或遮罩移除微粒的設備與方法。200940194 VI. Description of the Invention: [Technical Field of the Invention] Embodiments of the present invention generally relate to methods and apparatus for cleaning a surface. In particular, embodiments of the present invention provide methods and apparatus for removing particles from a substrate or mask surface during semiconductor processing. [Prior Art] As the size of semiconductor components continues to decrease, the minimum particle size to be removed from the substrate and the mask is also reduced. For example, in ultra-violet lithography (Euvl), the feature size can be 65 nm, 45 nm, 32 nm, or 22 nm, and the particle size limit is usually 8 times the same feature size. small. Particles can be removed from the substrate or mask using a variety of methods. For example, in a method, a substrate or mask is irradiated with a laser having sufficient energy to release particles while an inert gas flows through the surface of the wafer to carry away the particles released by the ®. In another method, the insertion of the energy transfer medium (typically - fluid) is interposed between the particles to be removed and the surface. Radiation energy is used to illuminate the medium > and the medium level γ gamma & 乡 η and receive enough energy to produce explosive evaporati (n), and then expel the particles. However, today's methods are too complicated to implement if they are not limited by application. Therefore, there is still a need to develop a method and apparatus for cleaning small-sized particles from the surface of the substrate pot. 200940194 SUMMARY OF THE INVENTION Embodiments of the present invention generally provide apparatus and methods for cleaning a substrate or mask. In particular, embodiments of the present invention provide apparatus and methods for removing particulates from a substrate or mask using electrostatic forces.
本發明的一實施例提供一種清潔基板或遮罩的設備， 其包含一基板支撐件，建構成接收與支撐該基板或遮 罩；一採集探針，其與一靜電功率源連接，其中該採集 探針係建構成利用靜電力拾起在該基板或遮罩之一表面 上的微粒；以及一引導機械裝置，其建構成提供該採集 探針與該基板支撐件間的相對移動。 本發明之另一實施例提供一種從一基板移除微粒的設 備，其包含：一基板支撐件，建構成接收與支撐該基板； 一探針組件，其建構成從該基板移除微粒。其中該探針 組件包含—臂，其具有—自由端與—固定端，其中該自 由端係可移動地設置在該基板支撐件上方；一採集探 針’安装在靠近該臂之該自由端處；以及一靜電功率源， 糕接至該採集探針，其巾該靜電功率源係建構成提供一 靜電力至該採集探針，進而該採集探針可從基板移除微 本發明之又一實施例提供—種用以清潔遮罩或基㈣ 從包含：提供一採集探針，該採集探針係建構成 從該遮罩或基板拾起微粒；施加-靜電力至該採集携 200940194 針；以及將該採集探針朝該遮罩或基板上的該些微粒移 動，以拾起該些微粒。 【實施方式】 本發明之實施例提供利用靜電力用以從基板或遮罩移 除微粒的設備與方法。於一實施例中，一採集探針係與 一靜電功率源耦接，且建構成當靠近微粒時，利用靜電 力從基板或遮罩上拾起微粒。於一實施例中，採集探針 具有一錐形末端，其直徑與標的微粒大小相近。於一實 施例中’錐形末端略大於微粒。力一實施例中，標的微 ❹An embodiment of the present invention provides an apparatus for cleaning a substrate or a mask, comprising a substrate support member configured to receive and support the substrate or the mask; an acquisition probe coupled to an electrostatic power source, wherein the collection The probe system is constructed to pick up particles on the surface of one of the substrate or the mask by electrostatic force; and a guiding mechanism is constructed to provide relative movement between the collecting probe and the substrate support. Another embodiment of the present invention provides an apparatus for removing particles from a substrate, comprising: a substrate support configured to receive and support the substrate; and a probe assembly configured to remove particles from the substrate. Wherein the probe assembly includes an arm having a free end and a fixed end, wherein the free end is movably disposed above the substrate support; an acquisition probe is mounted adjacent the free end of the arm And an electrostatic power source, the cake is connected to the collection probe, and the electrostatic power source is configured to provide an electrostatic force to the collection probe, and the collection probe can be removed from the substrate. The embodiment provides a cleaning mask or a base (4). The method comprises: providing an acquisition probe, the acquisition probe is configured to pick up particles from the mask or the substrate; applying an electrostatic force to the collection and carrying the 200940194 needle; And moving the collection probe toward the particles on the mask or substrate to pick up the particles. [Embodiment] Embodiments of the present invention provide an apparatus and method for utilizing electrostatic force to remove particles from a substrate or mask. In one embodiment, an acquisition probe is coupled to an electrostatic power source and is configured to pick up particles from the substrate or mask using electrostatic forces when in proximity to the particles. In one embodiment, the acquisition probe has a tapered end having a diameter that is similar to the target particle size. In one embodiment, the tapered end is slightly larger than the particles. In an embodiment, the target micro ❹
粒乃指該些比在正進行清潔之基板或遮罩上的特徵結構 其80%關鍵尺寸大者。本發明之實施例更提供了 一種引 導機械裝置’其建構成產生採集探針與基板或遮罩間的 相對移動，以清潔整個基板或遮罩表面。 第1圖示意地㈣依據本發明之—實施例，清潔站⑽ 的側視圖。清潔站1GG係建構成用以單獨清潔基板或遮 罩或可與其他清潔處理結合。舉例而言，清潔站100可 心在圖㈣成期間於濕式清潔之後清潔遮罩或基板。Particles are those that are 80% more critical than the features on the substrate or mask being cleaned. Embodiments of the present invention further provide a guiding mechanism that is configured to create relative movement between the acquisition probe and the substrate or mask to clean the entire substrate or mask surface. Figure 1 is a schematic side view of a cleaning station (10) in accordance with an embodiment of the present invention. The cleaning station 1GG is constructed to clean the substrate or cover separately or in combination with other cleaning processes. For example, the cleaning station 100 can clean the mask or substrate after wet cleaning during the drawing (4).
清潔站1 〇〇通常包合__ Μ I ^ a a知集組件103,其設置在建構 成將基板/料102支料其上之基板支㈣⑻的上 方。於—實施例中，採集组# 1〇3包含安褒在支臂1〇9 上的採集探針1 〇4.。採隹炉；血 採集探針1〇4具有-未與支臂109 面對基板/遮罩1G2的錐形末端105。採集探針1〇4 200940194 為導電的且搞接至靜電源1〇7。 靜電源107通常包含靜電產生器，其建構成利用摩擦 或靜電感應來聚積電荷而產生高電屋。在清潔期間，採 集探針H)4以產生靜電力的靜電電荷充電以吸引鬆散微 第2A-2B圖示意地綠示依據本發明之一實施例，在产 潔處理期間採集探針104放大視圖。如第2A圖所示，:The cleaning station 1 〇〇 usually includes a __ Μ I ^ a a collection assembly 103 disposed above the substrate support (4) (8) that is constructed to support the substrate/material 102. In the embodiment, the acquisition group #1〇3 comprises an acquisition probe 1 〇4. on the arm 1〇9. The picking furnace; the blood collecting probe 1〇4 has a tapered end 105 that does not face the arm 109 facing the substrate/mask 1G2. The acquisition probe 1〇4 200940194 is electrically conductive and is connected to the static power supply 1〇7. The static power source 107 typically includes an electrostatic generator that is constructed to utilize a friction or electrostatic induction to accumulate charge to produce a high electrical house. During cleaning, the probe H) 4 is collected to generate an electrostatic force electrostatic charge charge to attract the loose micro 2A-2B diagram schematically green. According to an embodiment of the invention, the probe 104 is enlarged during the manufacturing process. . As shown in Figure 2A,:
靜電源107對採集探# 1〇4提供靜電電荷時靜電場^ 係在採集探針104錐形末端1〇5周圍產生。如第Μ圓所 示’微粒106在靜電場n〇的影響下’可被採集探針104 拾起it而從基板/遮罩1G2的表面清除。在清潔處理期 間’採集探針104不-定要接觸基板/遮$ 1()2，因此可 避免進一歩的污染。 採集探針m可帶正電或負t。於—實施例中，施加 至採集探針104的靜電電荷可在約50伏特至約250伏特 的範圍内。在另—實施例中，施加至採集探針104的靜 電電荷可在約50伏特至約100伏特的範圍内。 在半導體製造中，待移除微粒的尺寸通常取決於特徵 結構=關鍵尺寸。舉例而言，就將用料學微影中的遮 罩而言，比0.8倍技術節點小的微粒是可容忍的乂因此， 於°特徵結構之〇.8倍關鍵尺寸大的微粒都需移除。 '實施例中，採集探針104的錐形末端105具有直徑 108，其略大於待移除微粒1〇6的尺寸1〇6&。 於實施例中，採集探針104可由導電材料製造，例 200940194 如不錄鋼與鈦。 β 、回第1圖，清潔站1 〇〇更包含一引導機械裝置， 其提供了採集探針104與基板/遮罩1〇2間的相對移動， 如箭頭111所示°相對移動能使採集探針104接近待清 潔基板/遮軍102的整個頂表面。引導機械裝置的實施例 進一步於第3與4圖中描述。 於實施例中，在清潔處理期間採集探針1〇4並未接 板/遮罩102。基板/遮罩丨〇2的頂表面與採集探針1〇4 ❹ 的錐形末端1〇5間的距離112小於約10mm。 在另一實施例中，採集探針104與基板/遮罩102可沿 著如第1圖箭頭113所示的垂直方向相對移動。沿著垂 直方向的相對移動能使採集探針1〇4靠近基板/遮罩1〇2 以進行所需清潔。於一實施例中，在清潔期間，採集探 針104可移動靠近基板/遮罩102,以與待清潔的微粒106 接觸。 第3圖示意地繪示依據本發明之一實施例，清潔站2〇〇 的立體圖。 清潔站200通常包含框架215、可移動地設置在框架 215上的採集組件203以及建構成用以將基板/遮罩2〇2 支撐於其上的基板支撐件201。 採集組件203包含安裝在支臂209上的採集探針204» 採集探針204具有一未與支臂209相接且面對基板支樓 件2〇1的錐形末端205。採集探針204為導電的且搞接 至靜電源207。靜電源207建構成用以提供靜電電壓至 200940194 採集探針204。 支臂209具有一安裝著採集探針2〇4的自由端2〇9a, =及一耦接至框架215的固定端209b。支臂2〇9為可繞 著軸211在固定端2〇9b附近處旋轉，因而自由端 與採集探針204可於基板支撐件2〇1上方移動如曲線 2U所示。於一實施例中，支臂2〇9亦可沿著如箭頭216 所示的垂直方向移動，以能調節採集探針2〇4的高度。 基板支撐件201係可繞著中央軸213旋轉。在清潔處 ® 理期間’基板支料2G1繞著t央軸213旋轉，同時支 臂209沿著曲線212移動，使得採集探針2〇4掃描過整 個基板/遮罩202的表面。 清潔站200更包含探針處理站214，其建構成用以自 採集探針204移除所收集的微粒。於一實施例中探針 處理站214可設置在框架出上。在清潔基板/遮罩之前 或之後’支臂209可朝探針處理站214旋轉，以將在採 , 集探針204上的任何微粒移除。 第4圖示意地繪示依據本發明之另一實施例清潔站 300的立體圖。 清潔站300通常包含引導座臺3〇1，其建構成可移動 地支樓基板/遮罩302於頂表面3〇lc上。引導座臺3〇ι 包含兩驅動裝置3〇la、301b，各建構成沿著一方向獨立 地移動基板/遮罩302。 凊潔站300更包含一設置在座臺3〇ι附近的採集組件 3〇3。採集組件3〇3包含安裝在支臂謝上的採集探針 9 200940194 3〇4。採集探針3〇4具有— ,Λ1 未與支臂309相接且面對座臺 301的錐形末端3 05。採隼插私，Λ ^ E 果锍針304為導電的且耦接至靜 電源3G7。靜電源3G7建槿 丧主靜 構成用以提供靜電電壓至採隼 探針304。 在清潔期間，基板/遮罩302可藉由引導座4 3〇1移 動’使得採集探針则可掃面過基板/遮罩3G2的整個表 面。軌跡312繪示了清潔處理的例示掃描路徑。When the static power source 107 supplies an electrostatic charge to the acquisition probe #1〇4, an electrostatic field is generated around the tapered end 1〇5 of the acquisition probe 104. As shown by the circle, the 'particles 106 under the influence of the electrostatic field n〇' can be picked up by the acquisition probe 104 to be removed from the surface of the substrate/mask 1G2. During the cleaning process, the acquisition probe 104 does not necessarily contact the substrate/cover 1 1 () 2, so that further contamination can be avoided. The acquisition probe m can be positively charged or negatively t. In an embodiment, the electrostatic charge applied to acquisition probe 104 can range from about 50 volts to about 250 volts. In another embodiment, the electrostatic charge applied to acquisition probe 104 can range from about 50 volts to about 100 volts. In semiconductor fabrication, the size of the particles to be removed typically depends on the feature structure = critical dimensions. For example, in the case of a mask in the lithography, particles smaller than 0.8 times the technical node are tolerable. Therefore, the characteristics of the structure are as large as 8 times the size of the particles. except. In the embodiment, the tapered end 105 of the acquisition probe 104 has a diameter 108 which is slightly larger than the size 1〇6& of the particles 1〇6 to be removed. In an embodiment, the acquisition probe 104 can be fabricated from a conductive material, such as 200940194 if steel and titanium are not recorded. β, back to Figure 1, the cleaning station 1 further includes a guiding mechanism that provides relative movement between the acquisition probe 104 and the substrate/mask 1〇2, as indicated by arrow 111. The probe 104 is near the entire top surface of the substrate/cover 102 to be cleaned. Embodiments of the guiding mechanism are further described in Figures 3 and 4. In an embodiment, the probes 1〇4 are not picked up/masked 102 during the cleaning process. The distance 112 between the top surface of the substrate/mask 丨〇 2 and the tapered end 1 〇 5 of the acquisition probe 1 〇 4 小于 is less than about 10 mm. In another embodiment, the acquisition probe 104 and the substrate/mask 102 are relatively movable in a vertical direction as indicated by arrow 113 in FIG. The relative movement in the vertical direction enables the acquisition probe 1〇4 to be close to the substrate/mask 1〇2 for the desired cleaning. In one embodiment, during cleaning, the collection probe 104 can be moved closer to the substrate/mask 102 to contact the particles 106 to be cleaned. Figure 3 is a schematic perspective view of a cleaning station 2A in accordance with an embodiment of the present invention. The cleaning station 200 generally includes a frame 215, an acquisition assembly 203 movably disposed on the frame 215, and a substrate support 201 constructed to support the substrate/mask 2〇2 thereon. The acquisition assembly 203 includes an acquisition probe 204 mounted on the arm 209. The acquisition probe 204 has a tapered end 205 that is not coupled to the arm 209 and faces the substrate support 2〇1. The acquisition probe 204 is electrically conductive and is coupled to a static power source 207. The static power source 207 is constructed to provide an electrostatic voltage to the 200940194 acquisition probe 204. The arm 209 has a free end 2〇9a on which the acquisition probe 2〇4 is mounted, and a fixed end 209b coupled to the frame 215. The arm 2〇9 is rotatable about the shaft 211 near the fixed end 2〇9b, so that the free end and the collecting probe 204 can move over the substrate support 2〇1 as shown by the curve 2U. In one embodiment, the arms 2〇9 can also be moved in a vertical direction as indicated by arrow 216 to adjust the height of the acquisition probes 2〇4. The substrate support 201 is rotatable about a central axis 213. During the cleaning process, the substrate support 2G1 rotates about the t-axis 213 while the arm 209 moves along the curve 212 so that the acquisition probe 2〇4 scans the surface of the entire substrate/mask 202. The cleaning station 200 further includes a probe processing station 214 that is configured to remove the collected particles from the acquisition probe 204. In one embodiment the probe processing station 214 can be disposed on the frame. The arms 209 can be rotated toward the probe processing station 214 before or after cleaning the substrate/mask to remove any particles on the collection probe 204. Figure 4 is a schematic perspective view of a cleaning station 300 in accordance with another embodiment of the present invention. The cleaning station 300 typically includes a guide station 3〇1 that is constructed to form a movable floor substrate/mask 302 on the top surface 3〇lc. The guiding platform 3〇 includes two driving devices 3〇, 301b, each of which is configured to independently move the substrate/mask 302 in one direction. The cleaning station 300 further includes an acquisition component 3〇3 disposed near the platform 3〇. The acquisition assembly 3〇3 contains an acquisition probe 9 200940194 3〇4 mounted on the arm. The acquisition probe 3〇4 has — — Λ1 is not attached to the arm 309 and faces the tapered end 305 of the seat 301. The 锍 ^ E 锍 pin 304 is electrically conductive and coupled to the static power supply 3G7. The static power supply 3G7 is built to provide static voltage to the pick-up probe 304. During cleaning, the substrate/mask 302 can be moved by the guide block 4 3 ' so that the acquisition probe can sweep across the entire surface of the substrate/mask 3G2. Trace 312 depicts an exemplary scan path for the cleaning process.
Ο 於一實施例中，採集探針3〇4可沿著垂直方向相對於 引導座臺301移動’以能調整採集探針3糾的高度。 於一實施例中，弓！導座臺301可移動基板/遮罩3〇2’ 使得採集探針304對準待移除的微粒3〇6◎於一實施例 中，在移除期間可降低採集探針3〇4以與微粒3〇6接觸。 第5圖為依據本發明之一實施例，顯示清潔處理4〇〇 的流程圖。冑潔處冑4〇〇可在製造光學微影之遮罩或在 基板上製造半導體元件的期間使用。 方框410綠示圖案形成處理’其中藉由在特定區域上 移除或沉積材料而在基板或遮罩上形成特徵結構。 方框420繪示濕式清潔處理，其中於基板或遮罩上來 自圖案形成處理的殘餘物係藉由清潔溶液（例如主體清 潔溶液）移除。在濕式清潔之後’基板/遮罩應十分乾淨， 僅有分離的微粒仍殘留於其上。 方框430繪示在濕式清潔之後可選的靜電清潔處理。 靜電清潔可為利用依據本發明實施例所述之靜電清潔站 的掃描清潔。 200940194 方框440燴示檢視處理，其中基板/遮罩係經檢測，以 偵測或定位任何不要的微粒。 方框450繪示方框440之檢視之後的靜電清潔處理。 靜電清潔可為利用依據本發明實施例所述之靜電清潔站 的掃描清潔或標的清潔。掃描清潔為帶靜電的採集探針 掃描基板/遮罩的整個表面以移除任何微粒的情形。標的 清潔為帶靜電的採集探針朝偵測到的微粒移動並將偵測 到的微粒拾起的情形。與方框42〇的濕式清潔處理相 ® 較，此靜電清潔處理為一細部清潔。 方框460繪示另一檢視處理。大致而言，若於此檢視 中未發現不要的微粒的話，則基板/遮罩係準備好進行後 續處理。然而，若仍有殘留微粒，可重複方框45〇、46〇 中的處理。 儘管上文已揭示本發明之實施例，本發明其他以及進 一歩的實施例亦不脫離其基本範圍，其範圍如下述申請 _ 專利範圍所界定者。 【圖式簡單說明】 面將參照附®1 士 1 .丨 ·. & 述進行更具 了本發明典 因此，為了可以詳細理解本發明實施例所述特徵，下 圍的限定，In one embodiment, the acquisition probes 3〇4 can be moved relative to the guide table 301 in the vertical direction to adjust the height of the acquisition probe 3. In one embodiment, the bow! The guide table 301 can move the substrate/mask 3〇2' such that the acquisition probe 304 is aligned with the particles to be removed 3〇6. In one embodiment, the acquisition probe 3〇4 can be lowered during removal to The particles 3〇6 are in contact. Figure 5 is a flow chart showing the cleaning process 4〇〇 in accordance with an embodiment of the present invention. The cleaning device can be used during the manufacture of a mask for optical lithography or for the fabrication of semiconductor components on a substrate. Block 410 green shows a patterning process 'where features are formed on the substrate or mask by removing or depositing material over a particular area. Block 420 depicts a wet cleaning process in which the residue from the patterning process on the substrate or mask is removed by a cleaning solution (e.g., a bulk cleaning solution). After wet cleaning, the substrate/mask should be very clean, with only the separated particles remaining on it. Block 430 illustrates an optional electrostatic cleaning process after wet cleaning. Electrostatic cleaning can be by scanning cleaning using an electrostatic cleaning station in accordance with an embodiment of the present invention. 200940194 Block 440 illustrates the viewing process in which the substrate/mask is detected to detect or locate any unwanted particles. Block 450 depicts the electrostatic cleaning process after review of block 440. The electrostatic cleaning can be a scanning cleaning or standard cleaning using an electrostatic cleaning station in accordance with an embodiment of the present invention. Scanning cleaning is the case where the electrostatically charged acquisition probe scans the entire surface of the substrate/mask to remove any particles. The target cleaning is the case where the electrostatically collected acquisition probe moves toward the detected particles and picks up the detected particles. This electrostatic cleaning process is a fine cleaning compared to the wet cleaning treatment of Box 42〇. Block 460 depicts another viewing process. In general, if no unwanted particles are found during this inspection, the substrate/mask is ready for subsequent processing. However, if there are still residual particles, the processing in blocks 45〇, 46〇 can be repeated. Although the embodiments of the present invention have been disclosed above, the other and further embodiments of the present invention are not to be construed as being limited by the scope thereof. [Simple description of the drawings] The surface will be described with reference to the accompanying drawings. In order to understand the features of the embodiments of the present invention in detail, the following limits are defined.
200940194 第1圖示意地緣禾依據本發明之一實施例清潔站的侧 視圖。 第2A-2B圖示意地繪示依據本發明之一實施例，在清 潔處理期間，採集探針的放大視圖。 第3圖示意地繪示依據本發明之一實施例清潔站的立 體圖。 第4圖示意地繪示依據本發明之另一實施例清潔站的 立體圖。 © 第5圖依據本發明之一實施例清潔處理的流程圖。 為了更易了解，所使用的相同元件符號則代表圖中相 同的元件。而於一實施例中的元件可利用於另一實施例 中，而不造成限制。 【主要元件符號說明】 100清潔站 101基板支撐件 102基板/遮罩 103採集組件 104採集探針 105錐形末端 106微粒 106a尺寸 107靜電源 108直徑 109支臂 110靜電場 111箭頭 Π2距離 113箭頭 200清潔站 201基板支撐件 202基板/遮罩 12 200940194 203採集組件 205錐形末端 209支臂 209b固定端 2 1 2曲線 214探針處理站 216箭頭 301引導座臺 〇 301b引導座臺 302基板/遮罩 304採集探針 306微粒 309支臂 400清潔處理 420方框 440方框 460方框 204採集探針 207靜電源 209a自由端 211轴 2 1 3中央軸 2 1 5框架 300清潔站 301a引導座臺 301c頂表面 303採集組件 305錐形末端 307靜電源 3 12軌跡 41 0方框 430方框 450方框 13200940194 Figure 1 is a schematic side view of a cleaning station in accordance with an embodiment of the present invention. 2A-2B is a schematic enlarged view of the acquisition probe during the cleaning process in accordance with an embodiment of the present invention. Fig. 3 is a schematic perspective view of a cleaning station in accordance with an embodiment of the present invention. Figure 4 is a schematic perspective view of a cleaning station in accordance with another embodiment of the present invention. © Figure 5 is a flow chart of a cleaning process in accordance with an embodiment of the present invention. For easier understanding, the same component symbols used represent the same components in the figures. The elements in one embodiment can be utilized in another embodiment without limitation. [Main component symbol description] 100 cleaning station 101 substrate support 102 substrate / mask 103 acquisition assembly 104 acquisition probe 105 tapered end 106 particles 106a size 107 static power supply 108 diameter 109 arm 110 electrostatic field 111 arrow Π 2 distance 113 arrow 200 cleaning station 201 substrate support 202 substrate / mask 12 200940194 203 acquisition assembly 205 tapered end 209 arm 209b fixed end 2 1 2 curve 214 probe processing station 216 arrow 301 guide the seat 〇 301b guide the base 302 substrate / Mask 304 acquisition probe 306 particles 309 arm 400 cleaning process 420 block 440 block 460 block 204 acquisition probe 207 static power supply 209a free end 211 axis 2 1 3 central axis 2 1 5 frame 300 cleaning station 301a guide seat Table 301c top surface 303 acquisition assembly 305 tapered end 307 static power supply 3 12 track 41 0 block 430 block 450 box 13