TW200939373A - Pre-heating system and method for silicon dies - Google Patents

Pre-heating system and method for silicon dies Download PDF

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TW200939373A
TW200939373A TW097145880A TW97145880A TW200939373A TW 200939373 A TW200939373 A TW 200939373A TW 097145880 A TW097145880 A TW 097145880A TW 97145880 A TW97145880 A TW 97145880A TW 200939373 A TW200939373 A TW 200939373A
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preheaters
die
dies
temperature
bonding
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TW097145880A
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Chinese (zh)
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TWI451508B (en
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Amlan Sen
Chin Guan Khaw
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Orion Systems Integration Pte Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/75Apparatus for connecting with bump connectors or layer connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/7525Means for applying energy, e.g. heating means
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01006Carbon [C]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01033Arsenic [As]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01076Osmium [Os]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01079Gold [Au]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01082Lead [Pb]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/102Material of the semiconductor or solid state bodies
    • H01L2924/1025Semiconducting materials
    • H01L2924/10251Elemental semiconductors, i.e. Group IV
    • H01L2924/10253Silicon [Si]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/14Integrated circuits
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/14Integrated circuits
    • H01L2924/143Digital devices
    • H01L2924/1433Application-specific integrated circuit [ASIC]

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)
  • Die Bonding (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)

Abstract

Aspects of the present invention provide a system and method for pre-heating dies and bonding the pre-heated dies to various media. The system includes a plurality of pre-heaters for preheating a plurality of dies from a base temperature to a desired temperature, the plurality of pre-heaters capable of incrementally heating each of the plurality of dies at a desired average rate until a desired temperature is reached; a die holder containing a plurality of die stations, each die station configured to receive one of the plurality of dies; and means for indexing each of the plurality of dies with respect to each of the plurality of pre-heaters until the desired temperature is reached.

Description

200939373 六、發明說明: 【發明所屬之技術領域】 本發明係關於用於將多個晶粒接合(bonding)至各種 電介質之晶粒預加熱器’以及該晶粒預加熱器的使用方法。 【先前技術】 覆晶微電子尊己件係利用晶片接合墊(bond pad)上的導 電凸塊(conductive bump)進行面朝下的(face_d〇wn)直接 電氣連接’例如,將電子零件“翻轉(flipped),,覆蓋於基 © 板、電路板或載體(carrier)上。在傳統的覆晶接合中,是 在完成沾附助焊劑(fluxing)與晶片擺置(placement)之 後,接著將該晶片移至回焊爐,讓引線的焊錫尖端熔化並 且與電路板的接塾接合。在熱壓接合(thennal compression bonding)中,晶片擺置與回焊係同時進行。 在擺置過程中’對晶粒以及基板加熱以熔化焊接凸塊,該 等焊接凸塊在電路上形成談等凸塊與該等接合墊之間的多 q 個焊接接合點(solder joint)。 與現今的覆晶配件技術有關的一個問題係矽晶粒容易 受到熱震(thermal shock)的影響。具有低介電常數的晶粒 在突然曝露於高温的情況下會發生電路疲勞(circuitry fatigue) 〇 熱壓縮過程中需要將晶粒自室溫加熱至焊錫的熔化溫 度,該焊錫熔化溫度可高達24〇r。為了降低發生熱震的 可能性,升降率(ramprate)必須為1〇deg/sec或更低。在 現存的熱接合機(bonder),接合工具本身利用一系列的預 94552 3 200939373 先程式化的溫度步驟將晶粒預先加熱。為了達到所需的升 降率,接合工具在開始接合製程前必須等待超過2〇秒。此 延遲動作造成現存系統的生產率相當低。 另一個問題係晶粒與基板的熱膨脹係數之間的失配 (mismatch)。第1A圖與第1B圖係描述此問題。第1A圖顯 示典型組裝之系統10的一部份。該系統10包含連接至基 板14的零件12。在以下所示的建構中,零件12與基板14 的熱膨脹係數(coefficient of thermal expansion; CTE) 可假設為不相同。熱失配△u係由以下方程式1所給定: 〇 Δ t/= Δ exLx Δ Τ ⑴ 其中,Ae =材料之間的熱膨脹係數差; L =零件的最長尺寸(通常為對角線);以及 △ T =溫度變化 第1B圖描述系統1〇的三個例子,假設基板14的熱膨脹係 數大於零件12的熱膨脹係數。在第一個例子2〇中,該系 統10係處於熱平衡狀態。在第二個例子22中,該等零件 0 係處於冷卻狀態,造成該基板14相對於該零件12的收縮。 在第二個例子24中’該等零件係處於加熱狀態,造成該基 板14相對於該零件12的膨脹。 【發明内容】 本發明的基本態樣提供一種系統,包含:複數個預加 熱器’用於將複數個晶粒自基礎溫度(base temperature) 預加熱至期望的溫度,該複數個預加熱器能夠以期望的平 均速率漸增地加熱該複數個晶粒中的每一個,直到達到期 94552 200939373 望的溫度;晶粒座(die holder),含有複數個晶粒架(die station),每一個晶粒架均被組構以接收該複數個晶粒的 其中一者;以及用具,用於將複數個晶粒的每一個指引 (indexing)至相應的預加熱器的每一個,直到達到期望的 溫度。 本發明的實施例可進一步包含能夠收回被預加熱的晶 粒並將該晶粒接合至基板的接合工具配件。該複數個預加 熱器可包含至少2個預加熱器。在其他實施例中,該複數 個預加熱器包含6個預加熱器。該指引用具可包含能夠旋 轉指引(rotary indexing)與線性指引(iinear indexing) 的裝置。該晶粒座可包含轉臺(turret)而該指引用具也可 包括驅動該轉臺的伺服電動機。 該複數個晶粒的每一個均可循序地被指引至每一個預 加熱器持續一段期望的時間’以達到期望的平均速率。所 期望的指引時間可為3秒。該複數個晶粒的每一個均可循 ❹序地位在距離每一個預加熱器〇.2mm處。該平均速率可為 每秒10°C。 在某些實施例中’該等指引用具可相應於預加熱器移 動晶粒。或者’該等指引用具可相應於晶粒移動預加熱器。 接合配件可使用覆晶接合將晶粒附接至基板。該晶粒 可具有凸塊結構,該凸塊結構為選自由柱凸塊(pillar bump)、焊錫凸塊(solder bump)、標準助焊劑(standard flux) ' p-coat助焊劑(p-coat flux)以及不流動的底部填 充劑(no-flow underfill)所構成的群組。 5 94552 200939373 該系統也可包含電腦控制系統,該電腦控制系統能夠 獨立地控制期望的溫度、平均速率、指引時間、各預加熱 器的溫度以及接合加熱器的溫度。 ❹ 本發明的替代態樣提供一種將晶粒從基礎溫度預加熱 至期望的溫度之方法,以後續將該晶粒附接至該基板,該 方法包含下列步驟:提供複數個預加熱器用以將複數個晶 粒自基礎溫度預加熱至期朗溫度,該複數細加熱器能 夠以,望的速率漸增地加熱該等晶粒,直到達到期望的溫 又提供3有複數個晶粒架的晶粒座,每一個晶粒架均被 由,乂接枚該複數個晶粒的其中—者;以及將複數個晶粒 中母-個均指引至每一個預加熱器,直到達到期望的溫度。 法中,該複數個預加熱器可包含θ個預加熱 而該等晶粒的溫度能夠以每秒lot:的平均速率上升。 移動步驟包含相應於該等預加熱器之每—者循序地 相應“複t日粒之每—者。或者’該等指引步驟可包含 ◎ 器=料數個晶粒之每—者循序地移動該複數個預加熱 〈母者。 以及中’該複數個預加熱器之每—者的溫度 知引率均可由電腦控制。 基板包含使用接合加熱11將預加熱的晶粒結合至 接合=明一種用於將晶粒接合至基板的 數個預力,器用:將複;個晶:=== 94552 6 200939373 的溫度’該複數個預加熱器能夠以期望的速率漸增地加執 該等晶粒,直到達到期望的溫度;含有複數個晶粒架的晶 粒座,每-個晶粒架均被組構以接收該複數個晶粒的其中 一者;以及用於將複數個晶粒中每—個均指引至每一個預 加熱器,直到達到期望的溫度之用具;以及能狗收回預加 熱的晶粒並將麵加熱的晶粒接合至基板的接合工具配 件。 豸晶粒座可包含轉臺。該郎用具也可包含驅動該轉 ^ 臺的伺服電動機。 該複數個預加熱器可包含6個預加熱器。複數個晶粒 中的每一者均可循序地指引至每一個預加熱器持續一段期 望的時間,以達到期望的平均速率。 該接σ工具配件可使用覆晶接合將該晶粒附接至該基 板。該晶粒可包含凸塊結構,該凸塊結構為選自由柱凸塊、 焊錫凸塊、標準助焊劑、Ρ—贈助焊劑以及不流動的底部 ❹填充劑所構成的群組。 該接合系統也可包含能夠將個別晶粒拾起並將該晶粒 放入該晶粒架内的晶粒拾取工具(diepickup tool)。該晶 粒座可包含轉臺。該指引用具也可包含驅動該轉臺的祠服 電動機。該複數個晶粒中的每一者均可循序地指引至每一 個預加熱器持續一段期望的時間,以達到期望的平均速 率。所期望的指引時間可為3秒。該複數個晶粒的每一個 均可循序地位於距離每一個預加熱器0 2mm處。該平均速 率可為每秒10°c。 94552 7 200939373 該接合系統也可包含電腦,用以控制該指引時間、該 期望的溫度、該平均速率以及該接合工具配件的溫度。 【實施方式】 本發明的一個態樣提供能夠克服以上所述之限制的晶 粒預加熱器。該晶粒預加熱器允許晶粒之溫度在該晶粒被 接合至基板之前由例如:室溫,漸漸地上升至期望的預加 熱溫度。如上所述,如果該晶粒之溫度上升太快,則能含 有許多電機/電子電路系統的晶粒可能會發生疲勞的現象。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a crystal grain preheater for bonding a plurality of crystal grains to various dielectrics and a method of using the crystal grain preheater. [Prior Art] Flip-chip microelectronics use a conductive bump on a bond pad for face-to-face direct electrical connection. For example, flipping an electronic part (flipped), overlying the substrate, circuit board or carrier. In conventional flip chip bonding, after the fluxing and wafer placement is completed, the The wafer is moved to the reflow oven, and the solder tip of the lead is melted and bonded to the interface of the board. In the case of the "thennal compression bonding", the wafer is placed at the same time as the reflow system. The die and the substrate are heated to melt the solder bumps, the solder bumps forming a plurality of solder joints between the bumps and the bond pads on the circuit. A related problem is that the crystal grains are susceptible to thermal shock. Circuitry with low dielectric constant will experience circuit fatigue in case of sudden exposure to high temperature. During the compression process, the crystal grains need to be heated from room temperature to the melting temperature of the solder, and the solder melting temperature can be as high as 24 〇r. In order to reduce the possibility of thermal shock, the ramp rate must be 1 〇 deg / sec or lower. In existing bonders, the bonding tool itself preheats the die using a series of pre-programmed temperature steps of 94552 3 200939373. In order to achieve the desired lift rate, the bonding tool must be before starting the bonding process. Waiting for more than 2 sec. This delay action causes the productivity of the existing system to be quite low. Another problem is the mismatch between the thermal expansion coefficients of the die and the substrate. Figures 1A and 1B depict this problem. 1A shows a portion of a typical assembled system 10. The system 10 includes a component 12 that is coupled to a substrate 14. In the construction shown below, the coefficient of thermal expansion (CTE) of the component 12 and the substrate 14 can be The assumption is not the same. The thermal mismatch Δu is given by Equation 1 below: 〇Δ t/= Δ exLx Δ Τ (1) where Ae = difference in thermal expansion coefficient between materials; L = zero The longest dimension (usually diagonal); and ΔT = temperature change. Figure 1B depicts three examples of the system 1〇, assuming that the thermal expansion coefficient of the substrate 14 is greater than the thermal expansion coefficient of the part 12. In the first example 2〇 The system 10 is in thermal equilibrium. In the second example 22, the parts 0 are in a cooled state, causing the substrate 14 to contract relative to the part 12. In the second example 24, the parts are in a heated state, causing expansion of the substrate 14 relative to the part 12. SUMMARY OF THE INVENTION A basic aspect of the present invention provides a system comprising: a plurality of preheaters 'for preheating a plurality of grains from a base temperature to a desired temperature, the plurality of preheaters capable of Increasingly heating each of the plurality of grains at a desired average rate until a temperature of 94525 200939373 is reached; a die holder containing a plurality of die stations, each crystal The granules are each configured to receive one of the plurality of dies; and an appliance for indexing each of the plurality of dies to each of the respective preheaters until a desired temperature is reached . Embodiments of the invention may further include a bonding tool fitting capable of retracting the preheated crystal grains and bonding the die to the substrate. The plurality of preheaters may comprise at least 2 preheaters. In other embodiments, the plurality of pre-heaters comprises six pre-heaters. The indexing device can include means capable of rotary indexing and iinear indexing. The die pad may include a turret and the indexing device may also include a servo motor that drives the turntable. Each of the plurality of dies may be sequentially directed to each preheater for a desired period of time' to achieve a desired average rate. The desired lead time can be 3 seconds. Each of the plurality of dies may be in the order of 2.2 mm from each preheater. The average rate can be 10 ° C per second. In some embodiments, the indexing implements can move the dies corresponding to the pre-heaters. Alternatively, the indexing means may move the preheater corresponding to the die. The bond pad can attach the die to the substrate using flip chip bonding. The die may have a bump structure selected from the group consisting of pillar bumps, solder bumps, standard flux 'p-coat flux' (p-coat flux) And a group of no-flow underfills. 5 94552 200939373 The system can also include a computer control system that independently controls the desired temperature, average rate, pilot time, temperature of each preheater, and temperature of the coupled heater. ALTERAROUND OF THE INVENTION An alternative aspect of the present invention provides a method of preheating a die from a base temperature to a desired temperature for subsequent attachment of the die to the substrate, the method comprising the steps of: providing a plurality of preheaters for The plurality of grains are preheated from the base temperature to the period temperature, and the plurality of fine heaters can gradually heat the grains at a desired rate until the desired temperature is reached to provide 3 crystals having a plurality of crystal shelves. A granule, each of which is spliced by one of the plurality of dies; and a plurality of dies are directed to each of the preheaters until a desired temperature is reached. In the method, the plurality of preheaters may comprise θ preheating and the temperature of the grains may increase at an average rate of lot: per second. The moving step includes sequentially corresponding to each of the preheaters, or each of the steps of the plurality of grains may be sequentially moved. The temperature pre-heating of the plurality of preheatings (the mother and the middle of the plurality of preheaters) can be controlled by a computer. The substrate comprises bonding the preheated grains to the joint using the joint heating 11 For a plurality of pre-forces for bonding the die to the substrate, the device uses: a temperature of: a === 94552 6 200939373 'The plurality of preheaters can incrementally add the grains at a desired rate Until the desired temperature is reached; a die pad having a plurality of die shelves, each of the die shelves being configured to receive one of the plurality of grains; and for each of the plurality of grains a tool that guides each preheater until the desired temperature is reached; and a bonding tool fitting that allows the dog to retract the preheated die and bond the surface heated die to the substrate. The die pad can include a turn Taiwan. The lang equipment can also contain The servo motor of the turntable. The plurality of preheaters may include six preheaters. Each of the plurality of dies may be sequentially directed to each of the preheaters for a desired period of time to achieve The desired average rate. The sigma tool assembly can attach the die to the substrate using flip chip bonding. The die can include a bump structure selected from the group consisting of stud bumps, solder bumps, and standards a group of flux, bismuth-free flux, and no-flow bottom enthalpy filler. The bonding system can also include dies that can pick up individual dies and place the dies into the dies a diepickup tool. The die pad may include a turntable. The indexing device may also include a servo motor that drives the turntable. Each of the plurality of diets may be sequentially directed to each of the presets. The heater is held for a desired period of time to achieve the desired average rate. The desired lead time can be 3 seconds. Each of the plurality of grains can be sequentially located at a distance of 0 mm from each preheater. rate It is 10 ° C per second. 94552 7 200939373 The joint system may also include a computer for controlling the lead time, the desired temperature, the average rate, and the temperature of the joint tool fitting. [Embodiment] One aspect of the present invention A die preheater capable of overcoming the limitations described above is provided. The die preheater allows the temperature of the die to gradually rise to a desired preheating by, for example, room temperature before the die is bonded to the substrate. Temperature As described above, if the temperature of the crystal grains rises too fast, the crystal grains which can contain many motor/electronic circuit systems may be fatigued.

第2圖描述根據本發明之預加熱器(以元件符號^表 〇 示)的分解透視圖。第3圖描述組裝後之晶粒預加熱器J 之透視圖。該晶粒預加熱器1〇〇可包含藉由轉臺座1〇6 (turret holder)來驅動轉臺1〇4之伺服電動機1〇2。該轉 0 臺104可含有複數個晶粒架ι〇5,用以在晶粒被接合至基 板之前預加熱該等晶粒。該轉臺1〇4係晶粒座的一個例 子,能夠用以托住複數個晶粒並與該晶粒預加埶器1〇〇 一 同使用。可了解到,端視所使用的晶粒類型而定,可使用 不同的晶粒預加熱器組構。該晶粒預加熱器⑽也可包含 能夠托住複數個預加熱器⑴的加熱器座⑽。精巧致動 器(compact actuator)U2可附接至該伺服電動機⑽。如 果預加熱程序被中斷,則該精巧致動器112將 100移離該等晶粒,以擗争堝许A总斗汾 … 以避免過度加熱該等晶粒。舉例而言, 如果機器故障而閒置一段時間,咬 及者因任何原因而被操作 者所中斷,則該精巧致動器112係 等晶粒的過度加熱。 係自動地運作,以避免該 94552 8 200939373 第2圖與第3圖所示之實施例描述6個預加熱器no。 然而’應了解到可使用較多或較少數量的預加熱器11 〇。 舉例而言,可使用多達15個預加熱器110,端視被加熱的 晶粒之需求,以及所要達到的升降率而定。類似地,第2 圖與第3圖所示之該預加熱器110藉由,例如:輻射,以 加熱該等晶粒,亦即,該等晶粒放置得相當接近該等預加 熱器110。然而,可了解到,熱對流(例如:利用送風馬達) 或者熱傳導(該預加熱器110與該等晶粒實體接觸)也皆可 0使用。 複數個托架可用於連接該預加熱器100的多個具有不 同功能的部分,並且用於將該預加熱器100連接至接合 機。此部份將於之後關於第4圖的討論中詳述。可了解到, 本說明書所示之具體托架僅供例示之用。可利用多種不同 的托架或座系統來連接該預加熱器1〇〇的多個具有不同功 能的部分。 ❹ 在第2圖與第3圖所示之實施例中,該預加熱器1〇〇 可包含左邊與右邊接置托架114a、U4b與轉臺馬達托架 116以及一個或多個預加熱器接置托架118a、n8b。包含 接合加熱器132、絕緣體134以及接合加熱器接置牦架136 的接合工具配件130也顯示於圖中。如以下之詳細討論所 描述,該接合工具配件130並未附接於該預加熱器配件 100。 該伺服馬達102、預加熱器11〇、接合工具配件13〇以 及接合加熱器132可包含複數個提供運作之電氣連接(未 94552 9 200939373 圖示y。在某些實施例中,這些零件的運作可由電腦控偏 提供特㈣預加熱時間,進而確保接合過程的效率 會犧牲品質控制。 + 該伺服馬達102可為能夠控制該轉臺1〇4之任何類型 馬達。在某些實施例中,該·馬達可為卿以以祕咖 词服馬達(如型號HFKP43K者),㈣在程式化期間指引該 預加熱轉I: 104。應了解到,也可㈣其他_的馬達/Fig. 2 is an exploded perspective view showing a preheater (indicated by a symbol) in accordance with the present invention. Figure 3 depicts a perspective view of the assembled die preheater J. The die preheater 1〇〇 may include a servo motor 1〇2 that drives the turntable 1〇4 by a turret holder. The turret 104 can include a plurality of dies 5 for preheating the dies before they are bonded to the substrate. An example of the turntable 1 〇 4 series die pad can be used to hold a plurality of dies and be used together with the die pre-twist. It can be appreciated that depending on the type of die used, different die preheater configurations can be used. The die preheater (10) may also include a heater block (10) capable of holding a plurality of preheaters (1). A compact actuator U2 can be attached to the servo motor (10). If the preheating procedure is interrupted, the delicate actuator 112 moves 100 away from the dies to contend for the A total hopper ... to avoid overheating the dies. For example, if the machine is idle for a period of time and the bite is interrupted by the operator for any reason, the delicate actuator 112 is overheated by the die. The system operates automatically to avoid the description of the six preheaters no in the embodiment shown in Figures 2 and 3 of the 94552 8 200939373. However, it should be understood that a greater or lesser number of preheaters can be used. For example, up to 15 pre-heaters 110 can be used, depending on the demand for the heated die and the rate of lift to be achieved. Similarly, the preheater 110 shown in Figures 2 and 3 is heated, for example, by radiation to maintain the grains, i.e., the dies are placed relatively close to the preheaters 110. However, it will be appreciated that thermal convection (e.g., by means of a blower motor) or thermal conduction (the preheater 110 is in contact with the die entities) can also be used. A plurality of brackets can be used to connect the plurality of portions of the preheater 100 having different functions and to connect the preheater 100 to the bonding machine. This section will be detailed later in the discussion of Figure 4. It will be appreciated that the specific brackets shown in this specification are for illustrative purposes only. A plurality of different bracket or seat systems can be utilized to connect the plurality of portions of the preheater 1 that have different functions. ❹ In the embodiments shown in Figures 2 and 3, the pre-heater 1〇〇 can include left and right attachment brackets 114a, U4b and turret motor bracket 116 and one or more pre-heaters The brackets 118a, n8b are attached. A joint tool fitting 130 including a joint heater 132, an insulator 134, and a joint heater attachment yoke 136 is also shown. The joint tool fitting 130 is not attached to the pre-heater fitting 100 as described in the detailed discussion below. The servo motor 102, the preheater 11〇, the bonding tool fitting 13〇, and the splicing heater 132 can include a plurality of electrical connections that provide operation (not shown in the example of the 94552 9 200939373 y. In some embodiments, the operation of these components The (4) preheating time can be provided by computer bias to ensure that the efficiency of the bonding process sacrifices quality control. + The servo motor 102 can be any type of motor capable of controlling the turntable 1〇4. In some embodiments, · The motor can be used to sing the motor (such as the model HFKP43K), (4) to guide the preheating during the stylization to I: 104. It should be understood that (4) other _ motor /

在第2圖與第3圖所示之實施例中,該晶粒預加熱器 110可為ULTRAMIC 600先進陶瓷加熱器 (Part#CER-l-〇l-〇〇130)。此模型係 24 伏特,72 瓦,最言 温度400 C的加熱器。同樣地’該接合加熱器132可為° ULTRAMIC 600 先進陶瓷加熱器(part#cER-l-〇l-〇〇i29)。 此模型係240伏特,750瓦,最高溫度40(rc的加熱器。可 了解到,具有不同電氣性質與加熱特性的不同模型及/或類 型的預加熱器與加熱器也皆可使用。In the embodiment shown in Figures 2 and 3, the die preheater 110 can be a ULTRAMIC 600 advanced ceramic heater (Part #CER-l-〇l-〇〇130). This model is a 24 volt, 72 watt, most commonly 400 C heater. Similarly, the joint heater 132 can be a ULTRAMIC 600 advanced ceramic heater (part#cER-l-〇l-〇〇i29). This model is 240 volts, 750 watts, and has a maximum temperature of 40 (rc heaters. It is known that different models and/or types of preheaters and heaters with different electrical and heating characteristics can also be used.

第4圖描述可與該預加熱器1〇〇—同使用以將預加熱 的晶粒組裝至基板之接合機(以元件符號200標示)的—個 實施例。該接合機200可包含(僅為舉例而非限制)供給晶 圓張力器(wafer tensioner)204的晶圓底匣(wafer magazine)202。該晶圓底匣係用以供給複數個晶圓片(未圖 示),每一個晶圓片含有複數個將在稍後步驟中被接合至基 板的晶粒。在某些實施例中,該等晶圓片的一側上可包含 厚度20至30微米的薄膠帶(藍色膠帶)。該等晶圓片可接 著被預先鑛成(pre-sawn)個別之晶粒。該晶圓張力器係接 10 94552 200939373 著用以拉緊該等被預先鋸開的晶圓片以鬆開個別晶粒使晶 粒拾取工具216能夠將晶粒拾起。 托盤緩衝器(tray buffer) 206可置放於該晶圓張力器 204的旁邊。基板供給器支架(substrate feeder gantry) 208與晶粒供給器支架2l〇提供正在被組裝的基板與晶 粒。該晶粒拾取工具216可被接置於該晶粒供給器支架210 上以從該晶圓張力器204拾取晶粒並將該等晶粒放入該等 晶粒架105。定位(orientation)與凸塊高度檢查可在此步 驟中實施。該等晶粒接著將如下所述地被預加熱。一旦被 預加熱之後,該等晶粒被傳送到該接合工具配件1別。同 時,基板/印刷電路板可被拾起並檢查印刷助焊劑(print Πιιχ)與基板高度,而該基板係被裝載於加熱板上用以預加 熱如下所述,實把視覺對準與校正(visi〇n al匕⑽印丨and correction)步驟’且該接合工具配件13〇接著被用以將該 等晶粒接合至該基板。在某些實施例中,該視覺對準係完 ❹全由電腦600(如第7圖)所完成。此程序係為已知技術而 不進一步贅述。 至少-個晶粒預加熱器_被置放於該接合機2〇 内。該晶粒預加熱II 100可利用例如:該左邊與右邊接】 1架114a、114b而被予以附接。該接合㈣0也可包含^ 腦600(如第7圖)’用以控制該接合機料多不同工 =者’可使用外部電腦。在這些實施例中,該電腦6。 分職綱等預加熱料溫度、以丨托盤上的言 等B曰粒與該等預加熱器的距離、將被接合之該基板之3 94552 11 200939373 度、接合工具之溫度…等。應了解到,控制參數具有許多 不同變化可供使用,端視所接合之特定材料及/或所實施的 接合類型而定。在某些實施例中,多個預加熱器1〇〇與接 合工具配件130可被用以提升接合速率。舉例而言,利用 兩個預加熱器100以及接合工具配件130,該接合機2〇〇 能進行每小時2400個接合。 第5圖描述該預加熱器100的一部分的局部透視圖。 如前所述,該轉臺104包含複數個晶粒架1〇5用以接收該 等晶粒。可了解到,該等晶粒架1〇5可具有許多不同的形 ❹ 狀與尺寸,端視所使用的晶粒類型而定。一系列的晶粒架 105係以循序的元件符號151至159所標示,以代表位置i 到9。第5圖也顯示含有複數個預加熱器11〇之加熱器座 108與接合工具配件130。 將晶粒自基礎溫度預加熱至期望的溫度用以後續將該 晶粒附接至基底之-财㈣描述於第6圖,並以元件符 〇 號500標示。該方法5〇〇可包含提供複數個預加熱器用以 將複數個晶粒自基礎溫度預加熱至期望的溫度的第一步驟 (元件符號502),該複數個預加熱器絲以期望的速率漸 增地加熱該等晶粒’直喝到期望的溫度;提供含有複數 個晶粒架的晶粒座之第二步驟(元件符號5〇4),每一個晶 粒架均被組構以接收該複數询晶粒的其中一者;以及用於 將複數個晶粒之每—個均至每一個預加熱器,直到達 到期望:溫度之最後步驟(元件符號506)。於以下内容中 進一步詳述。 94552 12 200939373 >閱第2圖至第6圖,現將描述安 令的該晶粒預加熱器100。妙& 、巧接合機200 100的使用並不受限於所心胜:了解到’該預加熱器 器可被使用於任何類型㈣合二m〇〇°該預加熱 晶粒在進行接合前經歷期望的溫度變^。需要 加熱器100可用於單一接人 卜’夕個預 於本發明實施例之範嘴内y 。所有此等應用均視為落 ❹ 該晶粒拾取工具216將S鈿罢也从7 當該健馬達_心=:置=處。每 於位置1(151)處。當與該接合機_配合使用Si置放 == 逮率預加熱至期望的溫度,該預器了: 轉以循序地相對於該預加熱器 粒,故此種指引形式係為已知的旋轉指引。 等日日 ο ^ 了咖起見,在本專卿概狀設備與 語指引,,盥,,脸 4t ?丨,, m 加則㈣I 係意指循序地相對於複數個預 加”、、器移動曰曰粒,進而在接合前將該晶粒提升到期望的溫 度。匕雖然上述的例子提供將晶粒相對於預加熱器110而旋 轉扣引至]基板(也就是說,該等晶粒係相應於該預加熱器 110移動),但可了解到也可使用其他的指引方法。舉例而 s,可使用線性指引,其中該等晶粒相對於該等加熱器直 線移動。同樣地’指引方式與本發明中該等晶粒相應於該 等預加熱器移動之目的並不相關。也可能係該預加熱器相 對於該等晶粒移動。可了解到,所有此等指引方法均視為 13 94552 200939373 落於本發明實施例之範疇内。 隨著該轉臺104的指引持續進行,晶粒便循序地移動 至預加熱位置3至8(153至158)。該指引步驟結束於位置 8 ’該等晶粒係加熱至所期望的溫度。在下一個指引步驟之 後,該等晶粒係於位置9(159)處被該接合工具配件13〇所 拾取。該接合工具配件130接著利用接合加熱器132提升 該晶粒的溫度’並接著將該晶粒接合至基板。 就上述實施例而言,該轉臺移動所需的實際時間係〇. 2 秒,以及預加熱該晶粒的2. 8秒延遲。新的晶粒接著被放 ◎ 置於位置1(151)處,也就是說,每三秒指引一個晶粒。在 此實施例中,該專預加熱器110中每一者均被設定在固定 溫度223°c。然後,該晶粒溫度在秒内從2〇。〇上升至 200 C。此加熱過程提供該等晶粒每秒1〇它的平均升降率。 類似地,該接合加熱器132的溫度係設定在260°C以有效 地實施該晶粒與該基板之間的接合步驟。 就此實施例而言,碎晶粒係1 〇mm乘1 〇mm且具有厚度 0· 75mm。該等晶粒係置放於該等預加熱器11〇下方〇. 2随 〇 處。在某些實施例中,指引時間、預加熱器11〇與接合加 熱器132的溫度、晶粒置放…等可由電腦輸入所控制。此 部份詳述於第7圖。應了解到,本發明並不受限於所述之 實施例。也可使用不同的晶粒尺寸、不同的預加熱器11() 與接合加熱器132溫度、不同的指引時間與不同的晶粒置 放,端視所應用的特定參數而定。對於個別元件的所有此 等改變均視為落於本發明實施例之範疇内。 94552 14 200939373 該接合機200與晶粒預加熱器100可用以實施多種不 同類型的接合。僅為舉例而非限制,該接合機能夠對於細 微間距紙引線架(paper leadframe)、記憶體模組、基板上 之咼接腳數晶粒、玻璃晶片、以及晶片堆疊(chip on chip) 製程實施熱壓接合(thermo-compression bonding)。該接 Ο ❹ 合機200能夠藉由精確的高度控制與壓縮-收縮技術產生 最佳強度的波紋管(bellow)狀接合點。該接合機2〇〇也可 支援不同凸塊結構,如(但不限制於)柱凸塊、焊锡凸壤、 標準助_、p_eQat助焊劑以及不流動之底部填充劑。 上述某些部份係根據演算法以及電腦記憶體内資 性或符號性表示法來明示或暗示地提出。這些演 赏性的描述以及功能性或符號性表示法屬: 中具有通常知識者用❹㈣ '、在所屬技術領域 以最有效地傳達其運作: 5的機器與程序以及用 般係認為是導致期望: = : = ^ 順序。該等步驟係需要對物理量進行物:1Stent)步驟 物理量如能被儲存、傳送、組合^理控制的步驟,該 電力、磁力或光學信號。 較,以及或者控制的 除非明確指出,以及如下列顯 在本說明書全文中㈣論到_ 應了解到, “取代,’、“產生,,、“初始化,,、‘=,,、“決定”、 指的是電腦系統或類似的電子裝似者’ 作與程序賴電㈣㈣衫 ^序,該等動 轉換成為該電腦系續哩量的資料予以控制並 統或其他纽儲存裝置、傳輸或顯示裝 94552 15 200939373 置内其他表示為類似物理量的資料。此種資料可輸出 · 氣信號用以控制上述製造程序的多種不同態樣。僅為舉例 而非限制,此種輸出信號可用以控制該預加熱器110的溫 度、該接合加熱器132的溫度、該指引時間、以及該晶粒 與預加熱器之間的距離或間隙(因此控制該晶粒的升降 , 率)…等。 本說明書也揭露了用於實施上述該等方法之運作的設 備。此種設備係基於所需之目的而特地建構,或包括一般 用途之電腦或其他藉由儲雜電腦巾的電腦程切選縣 Ο 地激活或重新組構的裝置。在此提出之演算法與顯示不一 定與特定電腦或其他特定設備有關。許多一般用途之機器 均可根據本說明書所教示者而與程式配合使用。或者,適 當建構更專業的設備以實施期望的方法步驟。傳統一般用 途電腦的結構將出現於以下說明内容中。 此外,本說明書隱含地揭露一種電腦程式,對所屬技 術領域中具有通常知識者而言,本發明說明書中所述㈣ 〇 法與製造程序之個別步驟能夠藉由計算機碼而生效係顯而 易見的。該電腦程式並不限於任何特定的程式語言或其實 現方式。可體會到的是許多不同的程式語言以及其編竭方 式均可用於實現本說明書所揭露之教示内容。此外,該電 腦程式並不限於任何特定的控制流程。該電腦程式的其他 許多變化能夠使用不同的控制流程而不背離本發明之精神 與範_。 再者,該電腦程式的一個或多個步驟可平行而不必循 94552 16 200939373 取:=式可儲存於任何電腦可_體。該 = 裳置(如磁碟或光碟、記憶體晶 片或八他適σ與-般料電腦連結之儲存 =體佈線⑽~)媒體,如網際: 路糸統’或者無線媒體,如GSM行動電話系統。當被載入 或執行於此種一般用途電腦時’電腦程式 實現較佳方法的設備。Figure 4 depicts an embodiment of an bonder (indicated by reference numeral 200) that can be used with the preheater to assemble preheated die to the substrate. The bonding machine 200 can include, by way of example only and not limitation, a wafer magazine 202 that is supplied to a wafer tensioner 204. The wafer bottom is used to supply a plurality of wafers (not shown), each wafer containing a plurality of dies that will be bonded to the substrate in a later step. In some embodiments, a thin tape (blue tape) having a thickness of 20 to 30 microns may be included on one side of the wafer. The wafers can be pre-sawned into individual dies. The wafer tensioner is attached to 10 94552 200939373 to tension the pre-sawed wafers to loosen individual dies to enable the wafer picking tool 216 to pick up the dies. A tray buffer 206 can be placed next to the wafer tensioner 204. A substrate feeder rig 208 and a die feeder holder 21 provide the substrates and crystal grains being assembled. The die pick tool 216 can be attached to the die feeder holder 210 to pick up the die from the wafer tensioner 204 and place the die into the die shelves 105. The orientation and bump height check can be implemented in this step. The grains are then preheated as described below. Once preheated, the dies are transferred to the bonding tool fitting 1 . At the same time, the substrate/printed circuit board can be picked up and inspected for print flux (print Πιιχ) and substrate height, and the substrate is loaded on the hot plate for preheating as described below to visually align and correct ( The visi〇n al匕(10) stamp and correction step 'and the bonding tool assembly 13' are then used to bond the dies to the substrate. In some embodiments, the visual alignment is accomplished entirely by computer 600 (as in Figure 7). This program is a known technique and will not be further described. At least one die preheater _ is placed in the bonding machine 2A. The die preheating II 100 can be attached using, for example, the left and right sides of the first 114a, 114b. The joint (4) 0 may also include a brain 600 (as shown in Fig. 7) to control the bonding machine. In these embodiments, the computer 6. The temperature of the preheating material such as the sub-sector, the distance between the B-grain and the pre-heater on the crucible tray, the temperature of the substrate to be joined, the temperature of the bonding tool, and the like. It will be appreciated that a number of different variations of the control parameters are available, depending on the particular material being joined and/or the type of joint being implemented. In some embodiments, a plurality of pre-heater 〇〇 and coupling tool fittings 130 can be used to increase the engagement rate. For example, using two pre-heaters 100 and bonding tool fittings 130, the bonding machine 2 can perform 2,400 engagements per hour. Figure 5 depicts a partial perspective view of a portion of the preheater 100. As previously mentioned, the turret 104 includes a plurality of dies 1 〇 5 for receiving the dies. It will be appreciated that the die shelves 1〇5 can have a number of different shapes and sizes depending on the type of die used. A series of die shelves 105 are labeled with sequential component symbols 151 through 159 to represent positions i through 9. Figure 5 also shows the heater block 108 and the bonding tool fitting 130 containing a plurality of preheaters 11 turns. Preheating the die from the base temperature to the desired temperature for subsequent attachment of the die to the substrate is described in Figure 6 and is designated by the symbol number 500. The method 5A can include a first step (element symbol 502) of providing a plurality of preheaters for preheating a plurality of grains from a base temperature to a desired temperature, the plurality of preheater wires being gradually at a desired rate Additional heating of the grains 'sufficiently to the desired temperature; providing a second step (element symbol 5〇4) of the die pads containing a plurality of die shelves, each die frame being configured to receive the One of the plurality of dies; and for each of the plurality of dies to each preheater until the desired: temperature final step (element symbol 506) is reached. It is further detailed in the following. 94552 12 200939373 > Referring to Figures 2 through 6, the crystal grain preheater 100 of the actuator will now be described. The use of the smart & splicing machine 200 100 is not limited to the win: it is understood that 'the preheater can be used in any type (four) combined with two 〇〇 before the preheated die is engaged Experience the desired temperature change ^. It is required that the heater 100 can be used for a single access to the present invention. All such applications are considered to be falling. The die picking tool 216 will also take S from 7 when the motor _ heart =: set =. Every position 1 (151). When pre-heating to the desired temperature using the Si placement == capture rate with the bonding machine, the pre-conditioner is: sequentially relative to the pre-heater particles, so this form of guidance is known as the rotation guide . Waiting for the day ο ^ The coffee is in sight, in this special briefing device and language guide, 盥,, face 4t 丨,, m 加 (4) The granules are moved to lift the granules to a desired temperature prior to joining. Although the above examples provide for the rotation of the dies relative to the preheater 110 to the substrate (ie, the dies) Corresponding to the pre-heater 110 movement, it is understood that other guidance methods can be used. For example, s, linear guidance can be used in which the dies move linearly relative to the heaters. The manner is not related to the purpose of the dies in the present invention corresponding to the movement of the preheaters. It is also possible that the preheaters are moved relative to the dies. It is understood that all such guidelines are considered 13 94552 200939373 falls within the scope of embodiments of the present invention. As the guidance of the turntable 104 continues, the die sequentially moves to the preheating positions 3 to 8 (153 to 158). The directing step ends at position 8. 'These crystallites are heated to the desired stage After the next directing step, the die is picked up by the bonding tool fitting 13 at position 9 (159). The bonding tool fitting 130 then uses the bonding heater 132 to raise the temperature of the die' and The die is then bonded to the substrate. For the above embodiment, the actual time required for the turret to move is 〇. 2 seconds, and the 2.8 second delay of preheating the die. The new die is then The ◎ is placed at position 1 (151), that is, one die is directed every three seconds. In this embodiment, each of the dedicated preheaters 110 is set at a fixed temperature of 223 ° C. Then The grain temperature rises from 2 Torr to 200 C in seconds. This heating process provides an average rate of rise and fall of the grains of 1 Å per second. Similarly, the temperature of the bonding heater 132 is set at 260. °C is effective to carry out the bonding step between the die and the substrate. For this embodiment, the chip is 1 〇mm by 1 〇mm and has a thickness of 0·75 mm. The preheaters 11 are below the bottom. 2 in some embodiments, in the case of guidance The temperature of the preheater 11 and the junction heater 132, the placement of the die, etc. can be controlled by computer input. This section is detailed in Fig. 7. It should be understood that the present invention is not limited to the above. Embodiments. Different grain sizes, different preheater 11() and junction heater 132 temperatures, different lead times, and different die placements may also be used, depending on the particular parameters applied. All such variations of individual components are considered to fall within the scope of embodiments of the present invention. 94552 14 200939373 The bonding machine 200 and die preheater 100 can be used to implement a variety of different types of bonding. By way of example and not limitation, The bonding machine is capable of performing thermocompression bonding on a fine pitch paper leadframe, a memory module, a number of die pads on a substrate, a glass wafer, and a chip on chip process. Bonding). The splicing machine 200 is capable of producing a bellows-like joint of optimum strength by precise height control and compression-contraction techniques. The bonding machine 2 can also support different bump structures such as, but not limited to, stud bumps, solder bumps, standard auxiliaries, p_eQat fluxes, and no-flow underfills. Some of the above are presented explicitly or implicitly in terms of algorithms and computer memory in vivo or symbolic representation. These deductive descriptions and functional or symbolic representations are: those with ordinary knowledge use (4) ', in their technical field to best convey their operation: 5 machines and procedures and use of the system is considered to cause expectations : = : = ^ order. These steps are required to perform physical quantities: 1 Stent) The physical quantities, such as the steps of being able to be stored, transferred, combined, controlled, electrical, magnetic or optical. , and/or control, unless explicitly stated, and as indicated below in the full text of this specification (4) _ should be understood, "replace, ', "produce,", "initialize,,," =,,, "decision" , refers to the computer system or similar electronic device-like program and program (4) (four) shirts, such conversions become the computer system to continue to control the amount of data to control and other storage devices, transmission or display Installed 94452 15 200939373 Other data indicating similar physical quantities. This data can be output to control the various different aspects of the above manufacturing process. For example and not limitation, such output signal can be used to control the pre-control The temperature of the heater 110, the temperature of the junction heater 132, the lead time, and the distance or gap between the die and the preheater (thus controlling the rise and fall of the die), etc. This specification also discloses Equipment for carrying out the operation of the above methods. Such equipment is specially constructed for the purpose required, or includes general purpose computers or others by means of storage. The computerized path of the brains is selected to activate or reorganize the device. The algorithms and displays presented here are not necessarily related to a particular computer or other specific device. Many general purpose machines can be taught according to this specification. And use with the program. Or, properly construct more professional equipment to implement the desired method steps. The structure of the traditional general-purpose computer will appear in the following description. In addition, this specification implicitly discloses a computer program, the technology It will be apparent to those skilled in the art that the individual steps of the method described in the present specification and the manufacturing process can be effected by computer code. The computer program is not limited to any particular programming language or its implementation. It can be appreciated that many different programming languages and their methods of editing can be used to implement the teachings disclosed in this specification. Moreover, the computer program is not limited to any particular control flow. Many other variations of the computer program can Use different control processes without departing from the spirit and scope of the present invention _. Furthermore, one or more steps of the computer program can be parallel without having to follow 94552 16 200939373: = can be stored in any computer can be _ body. This = skirt (such as disk or CD, memory chip or Eight his sigma and the storage of the computer connection = body wiring (10) ~) media, such as the Internet: Lucy's or wireless media, such as GSM mobile phone system. When loaded or executed in this general purpose computer 'Computer program to implement the preferred method of the device.

製造程序的電腦控制也可以硬體模組來實現。更具 來說,以硬體的角度來思考,模組係—種設計用以配:复 他零件或模組使用的功能性硬體單元。舉例而言,模 利用離散的電子科㈣現,或麵祕體電子電路的— 部分’如㈣應㈣體電路⑽c;)。科,還存在許多可 能的實現方式。在所賴術領域巾具有通常知識者將體會 到該系統能夠以硬體與軟體模組的組合來實現。 -不範實施例之方法與系統可實施於電腦系統6()()(概略 ❿顯示於第7圖)。該方法與㈣可以軟體方式實現(如執行 於該電腦系統600之電腦程式)並下達指令給該電腦系统 600以控制該加熱器1〇〇與晶粒接合機2〇〇的許多不同零 件。舉例而言,該電腦可用以獨立地控制該等預加熱器ΐι〇 的溫度、該接合加熱器132、控制該轉臺1〇4之伺服馬達 102的指引時間以及該等晶粒與該等預加熱器11〇之間的 距離。 該電腦系統600包括電腦模組602、輪入模組(如鍵盤 6〇4與滑鼠606)、複數個輸出裝置(如顯示器6〇8以及印表 94552 17 200939373 機610 )。該電腦模組602係經由適當之收發器裝置614 (transceiver device)連接至電腦網路612,進而能夠存 取例如:網際網路或其他網路系統(如區域網路(L〇cal Area Network,LAN)或廣域網路(Wide Area Netw〇rk, WAN)) 〇 在此示範實施例中,該電腦模組6〇2包含處理器618、 隨機存取記憶體(RAM)620以及唯讀記憶體(R〇M)622。該電 腦模組602也包含一些輸入/輸出(I^ut/〇utput,1/〇)介 面,例如:連接該顯示器608的I/O介面624以及連接該 鍵盤604的I/O介面626。該電腦模組6〇2的該等零件傳 統上係經由互連匯流排628並且以在所屬技術領域中具有 通常知識者所習知之方法互相通訊。 應用程式可被編碼於資料儲存媒體,如或快閃 記憶體載體,從而提供給該電腦系統〇之使用者,並且 利用對應於資料儲存裝置630的資料儲存媒體驅動器來讀 取。該處理器618以執行該應用程式來讀取和控制該應用 程式。程式資料的中間儲存可能利用RAM 620來達成。 上述該晶粒預加熱器100提供數種超越先前技術的優 點。由於不再使用該接合加熱器來預加熱,所以製造接合 至基板之晶粒所需的時間週期可大幅縮短。舉例而言,在 使用單一預加熱器的實驗測試中,每三秒鐘可製造一個組 裝好的晶粒/基板。亦如上所述,可在單一晶粒接合機加入 多個預加熱器’以增進晶粒接合程序的效率。 在所屬技術領域中具有通常知識者可體會到,本發明 200939373 :1==:施:=化及—背 為說明之,的而非為二J本發明/明之所有實施例皆僅The computer control of the manufacturing program can also be implemented by a hardware module. More specifically, from a hardware perspective, the modular system is designed to be equipped with functional hardware units for use in complex parts or modules. For example, the mode utilizes discrete electronics (4), or the part of the electronic circuit of the facet, such as (4) should (four) body circuit (10) c;). There are many possible implementations. Those of ordinary skill in the art field will appreciate that the system can be implemented in a combination of hardware and software modules. - The method and system of the exemplary embodiment can be implemented in computer system 6()() (shown generally in Figure 7). The method and (4) can be implemented in a software manner (e.g., executing a computer program of the computer system 600) and issuing instructions to the computer system 600 to control the heater 1 and the die bonder 2 . For example, the computer can be used to independently control the temperature of the preheater 、ι〇, the bonding heater 132, the steering time of the servo motor 102 that controls the turret 1 以及 4, and the dies and the pre The distance between the heaters 11〇. The computer system 600 includes a computer module 602, a wheel-in module (such as a keyboard 6〇4 and a mouse 606), and a plurality of output devices (such as a display 6〇8 and a printer 94552 17 200939373 machine 610). The computer module 602 is connected to the computer network 612 via a suitable transceiver device 614 to enable access to, for example, the Internet or other network systems (eg, a local area network (L〇cal Area Network, LAN) or Wide Area Netw〇rk (WAN)) In the exemplary embodiment, the computer module 6〇2 includes a processor 618, a random access memory (RAM) 620, and a read-only memory ( R〇M) 622. The computer module 602 also includes input/output (I/O) interfaces, such as an I/O interface 624 that connects the display 608 and an I/O interface 626 that connects the keyboard 604. The parts of the computer module 6〇2 are traditionally communicated via the interconnect bus 628 and in a manner known to those of ordinary skill in the art. The application can be encoded on a data storage medium, such as a flash memory carrier, for presentation to a user of the computer system and read by a data storage media drive corresponding to data storage device 630. The processor 618 executes the application to read and control the application. The intermediate storage of program data may be achieved using RAM 620. The die preheater 100 described above provides several advantages over the prior art. Since the bonding heater is no longer used for preheating, the time period required to manufacture the die bonded to the substrate can be greatly shortened. For example, in an experimental test using a single preheater, one assembled die/substrate can be fabricated every three seconds. As also noted above, multiple preheaters can be added to a single die bonder to enhance the efficiency of the die bonding process. It will be appreciated by those of ordinary skill in the art that the present invention is intended to be illustrative only, and not all of the embodiments of the present invention.

【圖式簡單說明J 藉由參考附加圖式使在技 者對本發明可有較佳的了解,域中具有通常知識 第1Α圖虚第iR 月瞭/、許多特色與優點。 之 ❹ 間的_服係數::=電氣系”多種^ 分解2圖圖係根據本發明的晶粒預加熱器的一個實施例之 第3圖係插述第 視圖; Sxa日粒預加熱器的組裝後之透 第4圖係插述可與第2圖*第 -同使用之晶粒接人機 =®之該S曰粒預加熱器 钱口機的一個實施例; ο 圖係描述第2圖鱼第3圖 部分之局部分解圖;一第d圖之該晶粒預加熱器的一 第6圖係描述利用第 以預加熱晶粒的 /、圖之該晶粒預加熱器 妁万法之一個實施例;以及 弟7圖係描述可用以控制第 器以及第4圖'、 圖之該預加熱 接合機的電腦系統。 L主要70件符號說明】 10配件系統、系統12零件 14 基板 9(] N 99 100 θ 〇» ' 22、24 例子 預加熱器⑽舰電動機 94552 19 200939373 104 轉臺 105 晶粒架 106 轉臺座 108 加熱器座 110 預加熱器 112 致動器 114a 、114b 接置托架 118a、118b 預加熱器接置托架 116 轉臺馬達托架 130 接合工具配件 132 接合加熱器 134 絕緣體 136 接合加熱器接置托架 151 ' 152 、 153 、 155 、 156 、 157 、158、159 晶粒架 200 接合機 202 晶圓底匿 204 晶圓張力器 206 托盤緩衝器 208 基板供給器支架 210 晶粒供給器支架 216 晶粒拾取工具 500 方法 502、 504、506 步驟 600 先進陶瓷加熱器 602 電腦模組 604 鍵盤 606 滑鼠 608 顯示器 610 印表機 612 電腦網路 614 收發器裝置 618 處理器 620 隨機存取記憶體 622 唯讀記憶體 626 I/O介面 628 互連匯流排 630 資料儲存裝置 20 94552[Simple description of the drawing By referring to the additional drawings, the skilled artisan can have a better understanding of the invention, and the domain has the usual knowledge, the first figure, the iRR, and many features and advantages. _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ The assembled Fig. 4 is an embodiment of the S-grain pre-heater machine that can be used with the die-connector of the second figure*. A partial exploded view of the portion of the figure 3 of the fish; a figure 6 of the die preheater of Fig. d depicts the use of the preheated die/Fig. One embodiment; and the brother 7 diagram describes a computer system that can be used to control the device and the preheating bonding machine of Fig. 4, Fig. L main 70 symbol description] 10 accessory system, system 12 parts 14 substrate 9 (] N 99 100 θ 〇» ' 22, 24 Example pre-heater (10) ship motor 94452 19 200939373 104 turntable 105 die holder 106 turntable 108 heater base 110 pre-heater 112 actuators 114a, 114b Brackets 118a, 118b Pre-heater attachment bracket 116 Turntable motor bracket 130 Engagement tool fitting 132 Heater 134 Insulator 136 Bonding Heater Mounting Brackets 151 ' 152 , 153 , 155 , 156 , 157 , 158 , 159 Die Holder 200 Bonding Machine 202 Wafer Socket 204 Wafer Tensioner 206 Tray Buffer 208 Substrate Supply Holder 210 Die Feeder Bracket 216 Die Pick Tool 500 Method 502, 504, 506 Step 600 Advanced Ceramic Heater 602 Computer Module 604 Keyboard 606 Mouse 608 Display 610 Printer 612 Computer Network 614 Transceiver Device 618 Processor 620 Random Access Memory 622 Read Only Memory 626 I/O Interface 628 Interconnect Bus 630 Data Storage Device 20 94552

Claims (1)

200939373 七、申請專利範圍: 1. 一種系統,包括: 複數個預加熱器,用以將複數個晶粒自基礎溫度預 加熱至期望的温度,該複數個預加熱器能夠以期望的平 均速率漸增地加熱該複數個晶粒的每一個,直到達到期 望的溫度; 晶粒座,含有複數個晶粒架,每一個晶粒架均被組 構以接收該複數個晶粒的其中一者;以及 ❹ 用具,用以將該複數個晶粒的每一個指引至相應的 該複數個預加熱器的每一個,直到達到該期望的溫度。 2. 如申請專利範圍第1項之系統,復包括接合工具配件, 能夠收回預加熱的晶粒’並且將該晶粒接合至基板。 3. 如申請專利範圍第1項或第2項之系統,其中,該複數 個預加熱器包括至少2個預加熱器。 4. 如上述申請專利範圍之任一項之系統,其中,該複數個 0 預加熱器包括6個預加熱器。 5. 如上述申請專利範圍之任一項之系統,其中,該指引用 具包括能夠旋轉指引或線性指引的裝置。 6. 如上述申請專利範圍之任一項之系統,其中,該晶粒座 包括轉臺,且該指引用具包括驅動該轉臺的伺服電動 機。 7. 如申請專利範圍第6項之系統,其中,該複數個晶粒的 每一個均循序地指引至相應的該等預加熱器的每一個 持續一段期望的時間,以達到該期望的平均速率。 21 94552 200939373 8. 如申請專利範圍第7項之系統,| 間係3秒,該複數個晶粒的每 ' 該期望的指引時 複數個加熱器的每-個0.2mm處,:循序地位於距離該 秒1〇χ。 <並且該平均速率係每 其中’該指引用 9. 如上述申請專利範圍之任一項之系统 具相應於該等預加熱器移動該晶教。 10·如申請專利範圍第1項至第8 中,該指引用具相應於該晶粒移叙任"'項之系統’其 11·如申請專利範圍第2項至第1Q2等預加熱器。 中’該接合工具配件使用覆晶接者之系統’其 板,且其中該晶粒包括凸塊結樽,#日粒附接至該基 柱凸塊、焊錫凸塊、標準助烊劑、、凸塊結構係選自由 不流動的底部填充劑所構成的鮮級P C〇at助焊劑以及 12·如申請專利範圍第7項至第u 器 包括電腦控制系統,該電腦控制之任一項之系統,復 期望的溫度、該平均速率、該指%統能夠獨立地控制該 的每-個的溫度以及該接合加熱丄時:、該等預加熱 13·-種將晶粒自基礎溫度預加熱至=溫度。 以 後續將該晶粒附接至基板,該方 的溫度之方法, 提供複數個預加熱器,用以將包括下列步驟·· 度預加熱至期望的溫度,該複數個二數個晶粒自基礎溫 的速率漸增地加熱該等晶粒,加熱器能夠以期望 提供含有複數個晶粒架的晶粒7望,度; 被經構以接收該複數個晶粒的其中一者母·^晶粒架均 94552 22 200939373 將該複數個晶粒的每一個指引至相應的該複數個 預加熱器的每一個,直到達到該期望的溫度。 14. 如申請專利範圍第13項之方法,其中,該複數個預加 熱器包括6個預加熱器。 15. 如申請專利範圍第13項和第14項之其中一項之方法, 其中,該等晶粒的該温度係以每秒10°C的平均速率增 加。 16. 如申請專利範圍第13項至第15項之任一項之方法,其 中,該指引步驟包括相應於該等預加熱器的每一個循序 地移動該複數個晶粒的每一個。 17. 如申請專利範圍第13項至第15項之任一項之方法,其 中,該指引步驟包括相應於該複數個晶粒的每一個循序 地移動該複數個預加熱器的每一個。 18. 如申請專利範圍第13項至第17項之任一項之方法,其 中,該複數個預加熱器的每一個的溫度以及該指引速率 係由電腦控制。 19. 如申請專利範圍第13項至第18項之任一項之方法,復 包括使用接合加熱器將該預加熱的晶粒結合至基板的 步驟。 20. —種用於將晶粒接合至基板的接合系統,該接合系統包 括: 晶粒預加熱器系統,包括: 複數個預加熱器,用以將複數個晶粒自基礎溫度預 加熱至期望的溫度,該複數個預加熱器能夠以期望的平 23 94552 1 200939373 •‘ 均速率漸增地加熱該複數個晶粒的每一個,直到達到期 望的溫度; 晶粒座,含有複數個晶粒架,每一個晶粒架均被組 構以接收該複數個晶粒的其中一者;以及 用具,用以將該複數個晶粒的每一個指引至相應的 該複數個預加熱器的每一個,直到達到該期望的溫度; 以及 接合工具配件,能夠收回該預加熱的晶粒,並且將 該晶粒接合至該基板。 ο 21. 如申請專利範圍第20項之接合系統,其中,該晶粒座 包括轉臺,且該指引用具包括驅動該轉臺的伺服電動 機。 22. 如申請專利範圍第20項或第21項之接合系統,其中, 該複數個預加熱器包括6個預加熱器,且其中該複數個 晶粒的每一個均循序地指引至相應的該等預加熱器的 每一個持續一段期望的時間,以達到該期望的平均速 q 率。 23. 如申請專利範圍第20項至第22項之任一項之接合系 統,其中,該接合工具配件使用覆晶接合將該晶粒附接 至該基板,且其中該晶粒包括凸塊結構,該凸塊結構選 自由柱凸塊、焊錫凸塊、標準助焊劑、p-coat助焊劑 以及不流動的底部填充劑所構成的群組。 24. 如申請專利範圍第20項至第23項之任一項之接合系 統,復包括晶粒拾取工具,能夠將個別的晶粒拾起,並 24 94552 200939373 且將該晶粒放入該晶粒架中。 25. 如申請專利範圍第20項至第24項之任一項之接合系 統,其中,該晶粒座包括轉臺,且該指引用具包括驅動 該轉臺的伺服電動機。 26. 如申請專利範圍第25項之接合系統,其中,該複數個 晶粒的每一個均循序地指引至相應的該等預加熱器的 每一個持續一段期望的時間,以達到該期望的平均速 率。 ® 27.如申請專利範圍第26項之接合系統,其中,該期望的 指引時間係3秒,該複數個晶粒的每一個均循序地位於 距離該複數個加熱器的每一個0. 2mm處,且該平均速率 係每秒10°C〇 28.如申請專利範圍第27項之接合系統,復包括電腦,用 以控制該指引時間、該期望的溫度、該平均速率以及該 接合工具配件的温度。 ❹ 25 94552200939373 VII. Patent Application Range: 1. A system comprising: a plurality of preheaters for preheating a plurality of dies from a base temperature to a desired temperature, the plurality of preheaters being capable of fading at a desired average rate Heating the ground each of the plurality of grains until a desired temperature is reached; the die pad, comprising a plurality of die shelves, each die frame being configured to receive one of the plurality of grains; And means for directing each of the plurality of dies to each of the respective plurality of preheaters until the desired temperature is reached. 2. The system of claim 1, wherein the system includes a bonding tool fitting that is capable of retracting the preheated die' and bonding the die to the substrate. 3. The system of claim 1 or 2, wherein the plurality of preheaters comprises at least 2 preheaters. 4. The system of any of the preceding claims, wherein the plurality of zero preheaters comprises six preheaters. 5. The system of any of the preceding claims, wherein the guiding device comprises means capable of rotary or linear guidance. 6. The system of any of the preceding claims, wherein the die pad comprises a turntable and the indexing device comprises a servo motor that drives the turntable. 7. The system of claim 6 wherein each of the plurality of dies is sequentially directed to each of the respective preheaters for a desired period of time to achieve the desired average rate. . 21 94552 200939373 8. As in the system of claim 7th, the system is 3 seconds, and each of the plurality of dies is 0.2mm each of the plurality of heaters in the desired direction: sequentially 1 second from the second. <and the average rate is per one of the guidelines. 9. The system of any of the above-mentioned patent claims moves the crystal in response to the preheaters. 10. In the first to eighth patent application scopes, the indexing device corresponds to the grain re-rendering system of the "' item' 11. The preheater such as the second to the first Q2 of the patent application range. The 'the joint tool fitting uses a system of a flip-chip connector', and wherein the die includes a bump knot, #日particle attached to the base pillar bump, solder bump, standard auxiliary agent, The bump structure is selected from the group consisting of a fresh-grade PC〇at flux composed of a non-flowing underfill agent and 12. The system of any one of the computer controls, including the computer control system, as in the scope of the patent application, the seventh to the uth The desired temperature, the average rate, the index can independently control the temperature of each of the joints and the heating of the joint: the preheating 13· preheating the crystal grains from the base temperature to = temperature. Providing a plurality of preheaters for subsequently attaching the die to the substrate at a temperature of the square for preheating to a desired temperature, the plurality of two grains from The rate of the base temperature is gradually increased by heating the grains, and the heater is capable of providing a plurality of crystal grains containing a plurality of crystal grains, and is configured to receive one of the plurality of crystal grains. Each of the plurality of dies is directed to each of the respective plurality of preheaters until the desired temperature is reached. 14. The method of claim 13, wherein the plurality of preheaters comprises six preheaters. 15. The method of any one of claims 13 and 14, wherein the temperature of the grains is increased at an average rate of 10 ° C per second. 16. The method of any one of clauses 13 to 15, wherein the directing step comprises sequentially moving each of the plurality of dies corresponding to each of the preheaters. 17. The method of any one of clauses 13 to 15, wherein the directing step comprises sequentially moving each of the plurality of preheaters corresponding to each of the plurality of dies. 18. The method of any one of clauses 13 to 17, wherein the temperature of each of the plurality of preheaters and the rate of the pilot are controlled by a computer. 19. The method of any one of claims 13 to 18, further comprising the step of bonding the preheated grains to the substrate using a bonding heater. 20. A bonding system for bonding a die to a substrate, the bonding system comprising: a grain preheater system comprising: a plurality of preheaters for preheating a plurality of grains from a base temperature to a desired The temperature of the plurality of preheaters can incrementally heat each of the plurality of grains at a desired average rate until a desired temperature is reached; the die pad, comprising a plurality of grains And each of the die shelves is configured to receive one of the plurality of dies; and means for directing each of the plurality of dies to each of the respective plurality of preheaters Until the desired temperature is reached; and bonding the tool fitting, the preheated die can be withdrawn and bonded to the substrate. The joining system of claim 20, wherein the die pad comprises a turntable, and the indexing device comprises a servo motor that drives the turntable. 22. The joining system of claim 20 or 21, wherein the plurality of preheaters comprises 6 preheaters, and wherein each of the plurality of dies is sequentially directed to the corresponding one Each of the preheaters is continued for a desired period of time to achieve the desired average speed q rate. The joining system of any one of clauses 20 to 22, wherein the joining tool fitting attaches the die to the substrate using flip chip bonding, and wherein the die comprises a bump structure The bump structure is selected from the group consisting of stud bumps, solder bumps, standard flux, p-coat flux, and no-flow underfill. 24. A joining system according to any one of claims 20 to 23, comprising a die picking tool capable of picking up individual dies and placing them in the crystal 24 94552 200939373 In the grain rack. The joint system of any one of clauses 20 to 24, wherein the die pad includes a turntable, and the indexing device includes a servo motor that drives the turntable. 26. The joining system of claim 25, wherein each of the plurality of dies is sequentially directed to each of the respective preheaters for a desired period of time to achieve the desired average rate. 2毫米处。 Each of the plurality of heaters is located at a distance of 0. 2mm from each of the plurality of heaters, each of which is sequentially located at a distance of 0. 2mm from each of the plurality of heaters. And the average rate is 10 ° C per second 〇 28. The bonding system of claim 27, further comprising a computer for controlling the guiding time, the desired temperature, the average rate, and the bonding tool accessory temperature. ❹ 25 94552
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CN110211899A (en) * 2019-05-09 2019-09-06 四川九州光电子技术有限公司 A kind of preheating of chip and welding system
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CN110170720A (en) * 2019-05-31 2019-08-27 广东瑞谷光网通信股份有限公司 A kind of positioning warm table
CN111524842A (en) * 2020-07-06 2020-08-11 宁波润华全芯微电子设备有限公司 Progressive baking and heating device
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US5259545A (en) * 1991-12-20 1993-11-09 Vlsi Technology, Inc. Apparatus for bonding a semiconductor die to a package using a gold/silicon preform and cooling the die and package through a monotonically decreasing temperature sequence
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