200936306 六、發明說明： 【發明所屬之技術領域】 本發明是有關於一種固定單元、具有其之拋光裝置 及應用該拋光裝置的層結構拋光方法與支撐板的製造方 法，且特別是有關於一種與拋光物體進行面接觸之固定 • 單元、具有其之拋光裝置及應用該拋光裝置的層結構拋 光方法與支撐板的製造方法。 【先前技術】 ⑩ 一般而言，在一真空處理室内，對一定位於一支揮 板上的基材（substrate)進行一系列的單元製裎以製作 半導體裝置。舉例來說，支撐板包括一應用偏壓的下部 電極（lower electrode)及一透過靜電力固定於基材的 靜電吸盤（electrostatic chuck)。 第1A圖至第1C圖繪示傳統拋光裝置中用以支撐基 材的支撐板的製造示意圖。 如第1Α圖所示，包括一金屬並具有一設置於金屬上 ⑩ 的粗胚層（raw layer) 24a，粗胚層24a係設置於傳統 拋光裝置10之一基板上。母板22上的粗胚層24a透過 抛光裝置10之一拋光頭（polishing head) 14被拋光， 以製造出包含母板22及一拋光層24的支撐板20。 由於在形成粗胚層24a的過程中會產生熱量，所以 母板22通常都會變得翹曲。此外，基板12位於一拋光 製程中處理室的底部，因此，難以透過一固定元件貫穿 基板12而使基板12與母板22互相固定在一起，故母板 22與基板12的接觸表面積不足。如此，使得母板22上 200936306 的拋光層24處在基板12與母板22部分分離的不利潰 下進行拋光。 如第1B圖所示，當支撐板2〇與拋光裝置10的基板 12分離時，支撐板20的母板22處於一翹曲狀態。斧而# 由於抛光製程使得抛光層24的上表面變得平坦，阂$ 著母板22之表面上的拋光層24具有不均勻的厚度。 如第1C圖所示，支撐板20裝設在一用以處旗 材的處理室内。當母板22完全地與處理室3〇接觸夜 拋光層24係受到毋板22變形的影響而變形。 如此，沿著母板之表面上的拋光層24的厚度及 度係不均勻且不佳的。 【發明内容】 〆 本發明之一實施例提供一種固定裝置，用以®足 支撐板至一拋光裝置。 说 ^ jJ] 本發明之一實施例提供一種包含上述固定單元’ 光裝置。 本發明之一實施例提供一種包含上述固定單元 光裝置。 乞擭 本發明之一實施例提供一種應用拋光裝置製造文 板的方法。 依據本發明之一些實施例，提供一拋光裝置之固定 單元。該拋光裝置包括一基板（base plate)、一支撐元 件及一固定元件（securing member)。基板位於一正面 (front surface)，一拋光物體設置於正面上。支撐元 件與基板之一背面進行面接觸並將基板與一底部隔開。 200936306 固定元件用以將拋光物體固定至基板，拋光物體與基板 之正面進行面接觸。 在一實施例中，固定元件包括一螺栓。螺栓用以從 基板之背面穿過基板，以將拋光物體鎖附在基板上。 依據一些實施例’提供一種拋光裝置。拋光裝置包 括一固定單元及一拋光單元。拋光裝置包括一基板、一 支撐元件及一固定元件。基板位於—正面，一抛光物體 設置於正面上。支撲元件與基板之一背面進行面接觸並 Ο 將基板與一底部隔開。固定元件用以將拋光物體固定至 基板，抛光物體與基板之正面進行面接觸。抛光單元設 置於基板及拋光物體之上方。 在一實施例中，固定元件包括一螺栓。螺栓用以從 基板之背面穿過基板，以將拋光物體鎖附在基板上。 依據一些實施例，提供一種層結構（layer)之平坦 化方法。平坦化方法包括以下步驟。設置一包含一層結 構之母板至一拋光裝置之一基板之一正面上，層結構係 ® 位於母板的上表面。以母板與基板之正面進行面接觸的 方式，固定母板至基板。以及’拋光位於拋光裝置上的 層結構。 在一實施例中，層結構包括一陶瓷材料。 根據一些實施例’提供一種支撐板之製造方法，支 撐板於一處理室内支撐一基材。製造方法包括以下步 驟。提供一具有一平坦面之母板。形成一層結構於母板 之一上表面。設置母板至一拋光裝置之一基板之一正面 上。以母板與基板之正面進行面接觸的方式’固定母板 5 200936306 泰，-▲▲矗 至基板。然後，拋光位於拋先裝置上的層結構。 在一實施例中，於形成層結構於母板之上表面之步 驟之前，製造方法更包括以下步驟。對母板之上表面進 行一表面處理象程以使母板之上表面具有一均勻的表 面粗度。 在一實施例中，於形成層結構於母板之上表面之步 驟包括以下梦鱗。形成一第一介電層至母板之上表面。 形成一電極層矣第一介電層之一部分上。然後，形成一 第二介電層產·第一介電層之其餘部分上及電極層上。 在一實施例中，第一介電層及第二介電層包含一陶 瓷材料，真電極層包含一金屬。 根據一呰實施例，一層結構可在一母板與一基板進 行面接觸迆接合的情況下進行拋光。因此，當一支撐板 裝設於處理室時拋光層可具有尚平面度。此外，沿著 支撐板之母板之表面上的平面層具有均勻厚度。 為讓本發明之上述内容能更明顯易懂，下文特舉一 較佳實施例，旅配合所附圖式’作詳細說明如下： 【實施方式】 本發明所要描述的實施例參照附加圖示下會更為完 整，本發明之實施例係繪示圖示中。然而，本發明可能 以許多不同型態實施且不應受限於所提出之實施例。更 明確地說，這些提出來的實施例使本發明更為周密且完 整，並更徹底傳達本發明的範疇給所屬技術領域之通常 知識者。圖示中所緣之元件尺寸及各元件之相對尺寸， 為了表現元件的特徵將做對應之調整以清楚說明本發 200936306 明。 需瞭解的是，當一元件係被指為在另一元件或另一 層「上」，可以代表所指元件直接位於另一元件或另一層 上，或是可能中間有別的元件或別的層。當一元件係被 ' 指為「連接至」另一元件或另一層，可以代表所指元件 * 直接連接至另一元件或另一層，或是可能中間有別的元 件或別的層。相對的，當一元件被指為「直接」位於另 一元件或另一層「上」時，中間就沒有別的元件。當一 φ 元件被指為「直接」「連接至」另一元件或另一層時，中 間就沒有別的元件。所有相同的標號皆用以表明相同之 元件。此處所使用的「及/或」包括所列出的項目其中之 一個或多個組合中的任何一種組合以及全部組合。 所需瞭解的是，雖然項次第一、第二等，在此可以 用來描述各種元件、結構、區域、範圍、層及/或部位， 這些元件、結構、區域、範圍、層及/或部位並不受限於 這些項次。項次僅用來區別元件、結構、區域、範圍、 G 層及/或部位彼此之間是不同個體。例如，第一元件、結 構、區域、範圍、層及/或部位可以編號為第二元件、結 構、區域、範圍、層及/或部位，而並不違背揭露内容之 精神。 與空間相關如「底下」、「下方」、「下面的」、「上方」、 「上面的」及相似之詞彙係用以描述圖示中一元件或特 徵與另一元件或特徵（另外多個元件或特徵）的關係。 另外，與空間相關之詞彙除了表示圖示所繪製之方位， 亦包括裝置使用中或運作中之不同方位。舉例來說，若 200936306 ‘ 翻轉圖示之裝置，則原來元件「下方」或「底下」之另 一元件或另一特徵係改變方位為元件「上方」之另〆元 件或另一特徵。因此，詞彙「下方」係可包括下方及上 方之朝向（orientation)。裝置可以其他方式朝向（捷 轉90°或面對其他方位），旅與本文中空間相關之描述語 對應說明。 在此所用的術語目的僅是為了描述特定的實施例， 而並不意圖限定本發明。此處所用的單數型態「一」及 「該」也意圖包括複數盤態’除非文中清楚指明不是。 需要進一步瞭解的是，用語「包括」使用在說明書中， 係用以具體說明存在的所述特徵、區域、整體、步雜、 操作、元件及/或成分，但並不排除一個或多個其他特徵 區域、整體、步驟、操作、元件、成分及/或其組合的存 在或添加。 本發明在此所述之實施例之剖面圖係為本發明理想 實施例的描繪示意。因此’例如因為製造技術及/或誤差 所導致形狀上的改變’是可以預期的。因此，本發明之 實施例不應被認為限定於在此描繪區域的特定形狀，而 是包括例如’生產導致的形狀。例如’一描繪或描述為 平坦之區域’具有粗糙及/或非線性的特徵。此外，描繪 之銳角可能會鈍化。因此，圖示中描緣之區域係為特性 之不意，而且並不意圖描繪出一區域的精確形狀，形狀 也不意圖用以限定本發明範缚。 除非另外定義，所有在此使用之用語〈包括技術及 科學用語）係與熟習本發明所屬之技術領域者所瞭解 200936306 通常意義相同。需要進一步瞭解的是，一般字典所定義 的用語，應被解讀為與相關領域之文章及本揭露内容一 致之意義，並不會解讀為過度理想或過度正式的形式， 除非在此有明確的定義。 以下將配合附圖詳細說明本發明。 J 第2圖繪示依照本發明之一實施例之拋光裝置的示 意圖。 如第2圖所示，依照本發明之一實施例之拋光裝置 ❹ 100包括一固定單元（fixation unit) 110及一拋光單 元（polishing unit) 120。固定單元110可包含一基板 112、一支撐元件114及一固定元件116。 在一實施例中，基板112可以是一平板（plate)， 而一支撐板20可設置在基板112的正面（front surface)。支撐板20可支撐及/或固定一處理物體，例 如是位於一預定之處理室内的半導體基材。 支撐元件114可與基板之正面相對之背面接觸並支 ⑩ 撐基板112。在本實施例中，複數個支撐元件114可沿著 基板112的周邊部位並以實質上相同的間距來設置。因 此，基板112在較高穩定性的情況下設置於支撐元件114 上。此外，基板可透過支撐元件114與一底部隔開。 在一實施例中，固定元件116可將支撐板20與基板 112固定在一起。舉例來說，固定元件116包含複數個螺 栓，其用以從基板112的背面往上鎖附，以將基板112 與支撐板20的母板22互相固定在一起。螺栓116係以 實質上相同的間距分隔開來，使母板22與基板112之間 200936306 有多處固定在一起。因此，母板22與基板122可互相緊 密地接觸在母板22的表面。即使是各種可造成母板22 變形的外部力作用在母板22上’固定元件116仍可抵抗 外部力的作用，避免母板因為受到外部力的作用而變 形。如此，母板22可穩定地固定至基板丨12，以得到高 · 平面度。 - 拋光單元120可放置於固定單元11〇的上方並用以 對一塗佈在母板22之上表面的粗胚層24進行拋光。因 為粗胚層24處於一局平面度的條件下進行抛光，所以沿 ❹ 著母板22之上表面上的拋光層具有均勻厚度，因此而具 有一高度平面性。 雖然於圖式中未緣示，拋光單元120可透過一驅動 單元（未緣示）相對拋光板20作往上及往下移動，以及 水平地移動及平行於拋光板20來移動。 第3A圖至第3E圖繪示使用第2圖所示之拋光裝置 之支撐板的製造流程示意圖。 如第3A圖所示’可提供一母板210且母板210的表 ❹ 面可以是平坦的。在一製程中，母板可用以支撐及固定 一基材（未繪示）。基材可包括一半導體裝置之半導體基 材及一液晶顯示（LCD)裝置的玻璃基材。藉由切削或研 磨製程，母板210可形成一階級圓盤（stepped c i rcu 1 ar disk)或一階級矩形板（stepped rectangular plate)。 母板可以包含一金屬，例如是銘（Al)。 然後，可對母板210之一上表面進行一喷砂（sand blasting)製程及一珠擊（shot blasting)製程。如此， 10 200936306 可使母板210的整個上表面具有一均勻的表面粗度。 如第3B圖所示，一粗胚層220a可透過一塗佈製程， 例如是一喷霧製程（spary coating process)來塗佈於 母板210的上表面。由於上表面具有均勻的表面粗度， 粗胚層220a可緊密地黏附於母板210的上表面。 • 在一實施例中’粗胚層220a可形成包含一陶瓷材料 的單層結構。陶曼材料可包含氧化紹（Al2〇3)、氧化在乙 (Y2〇3)、氧化鋁及氧化鋁的組成物、氧化銼（Zr〇2)、碳 〇 化銘（A1C)、氮化鈦（TiN)、氮化鋁（A1N)、碳化鈦（TiC)、 氧化鎂（MgO)、氧化鈣（CaO)、氧化铈（Ce〇2)、氧化鈦 (Ti〇〇、碳化硼（BxCy)、氮化硼（BN)、氧化矽（Si〇2)、 碳化矽（SiC)、釔鋁石榴石（YAG，YsAhOu)、高鋁紅柱石 (aluminosilicate，3Al2〇3 · 2Si〇3)、氟化鋁（A1F3)等。 上述材料係可單獨使用或可組合使用。基材與母板21〇 藉由粗胚層220a可彼此電性隔離。當高頻電源作用在母 板210時，一靜電力係產生在粗胚層22〇a上。 ® 在一實施例中，粗胚層220a可形成一多層結構，該 夕層結構包含數個組成層（C〇mp〇nent layer)。舉例來 說’粗胚層220a可包括一位於母板210之上表面的第一 介電層（dielectric layer)、一電極層及一第二介電層。 電極層位於第一介電層之上表面的一部分，第二介電層 位於電極層之一上表面及第一介電層之上表面的其它部 分。第一介電層及第二介電層可包括一陶瓷材料，且電 極層可包括一金屬。舉例來說’第一介電層及第二介電 層的陶瓷材料可包含氧化鋁（Al2〇3)、氧化釔（γ2〇3)、氧 11 200936306 化鋁及氧化釔的組成物、氧化锆（ZrOO、碳化鋁（A1C)、 氮化鈦（TiN)、氮化鋁（A1N)、碳化鈦（Tic)、氧化鐃 (%0)、氧化詞（ca〇)、氧化鈽（Ce〇2)、氧化鈦（Ti〇2)、 碳化硼（BxCy)、氮化硼（BN)、氧化矽（si〇2)、碳化矽 · (SiC)、紀紹石權石（yag，Υ3Α15〇ΐ2)、高銘紅柱石 (aluminosilicate, 3Al2〇3 · 2Si〇3)、氟化鋁（A1F3)等。 上述材料係可單獨使用或可組合使用。舉例來說，電極 層的金屬可以包含鎢（W)、鉬（Mo)及其合金。多層粗 胚層220a也可與基材及母板21〇電性分離。此外，當電 ⑬ 力源作用在多層粗胚層220a的電極層時，一靜電力德產 生在粗胚層220a上。因此，基材透過靜電力可固定於母 板 210。 如第3C圖所示，包括粗胚層220a的母板210町位 於拋光裝置100之基板112的正面。 固定元件116，例如是數個螺栓，可從基板112的 背面往上鎖附並且可貫穿基板112。因此，透過固定元件 ❹ 116 ’母板22可與基板112固定在一起。在切削製程、 研磨製程、表面處理製程及塗佈製程中’各種可使母板 210翹曲的外部力’例如是物理衝擊及熱量係作用在母板 210上。然而’即使在外部力的作用下，母板210及基板 112可互相緊密地接觸在母板21〇的表面上。也就是說， 固定元件116可抵抗外部力，並且·^避免母板210受到 外部力的作用而變形。因此，母板22可穩定地固定於基 板112上’以得到高平面度。 然後，拋光單元12〇可與粗胚層220a的上表面接 12 200936306 觸，並且在粗胚層220a的上表面水平地移動’以斗面化 粗胚層220a至一均勻厚度。因此’粗胚層220a <形成 一具有高平面度的平面層220 ° 如第3D圖所示，為了形成包含母板及箏面層 220的支撐板200，母板210與拋光裝置11〇的基板112 係分離的。然而，母板210及基板112係互相分離’因 此造成平面層200之平面度的降低。 ❹ 如第3E圖所示，當支撐板200裝設在一用以對基材 進行一必要製程的處理室30内時’支撐板2〇〇的母板210 可與處理室30進行面接觸並且固定於處理室go。因此， 在處理室30内，支撐板200的平面層220沿著母板21〇 的整個上表面可具有一均勻厚度並可具有一高平面度。 當平面層220形成一單層結構時，支撐板2〇〇可作 為一處理室30内的下部電極。此外，當平面層22〇形 一多層結構時，支樓板200可作為一處理室抑内 踢般。 电 依據-些實施例’-粗肱層可在一母板與一 行面接觸並接合的情況下進行抛光。因此，當支樓板 設於處理室時，拋光層可具有高平面度。此外，沿著 撐板之母板之表面上的平面層具有均勻厚户。 上述有關本發明之說明並非用以限制本發明 本發明已以-些實施例揭露如±，然其並非用卩限定^ 發明。本發明所屬技術領域中具有通常知識者在不 離本發明之精神和範_，當可作各種之 脫 因此，本發明之保護範圍當視後附 _& 與肩飾。 傻附之申凊專利範圍所界 13 200936306 定者為準。在申請專利範圍中，手段加上功能 (means-plus-function)之描述方式係用以涵蓋執行前 述功能之所有結構，且不只包括結構上之均等物，亦包 括類似之結構。因此，前述内容僅為本發明之範例說明， 並非用以將本發明之範圍限縮至此些具體實施例。再 者，各種針對上述實施例之更動以及其他實施方式，均 不脫離本發明之精神和範圍。本發明之保護範圍當視後 附之申請專利範圍極其均等物所界定者為準。 【圖式簡單說明】 第1A圖至第1C圖繪示傳統拋光裝置中用以支撐基 材的支撐板的製造示意圖。 第2圖繪示依照本發明之一實施例之拋光裝置的示 意圖。 第3A圖至第3E圖繪示使用第2圖所示之拋光裝置 之支撐板的製造流程示意圖。 【主要元件符號說明】 10、100 :拋光裝置 30 :處理室 12、112 :基板 110 :固定單元 114 :支撐元件 116 :接合元件 120 :拋光單元 220 :平面層 14 :拋光頭 20、200 :支撐板 22、210 :母板 24 :抛光層 24a、220a :粗胚層BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a fixing unit, a polishing apparatus therewith, a layer structure polishing method using the same, and a method of manufacturing a support plate, and particularly relates to a method Fixing in surface contact with a polishing object, a unit, a polishing apparatus therewith, a layer structure polishing method using the same, and a method of manufacturing a support plate. [Prior Art] 10 Generally, in a vacuum processing chamber, a series of unit processes are performed on a substrate which is necessarily located on a single slab to fabricate a semiconductor device. For example, the support plate includes a lower electrode to which a bias voltage is applied and an electrostatic chuck fixed to the substrate by an electrostatic force. Figs. 1A to 1C are views showing the manufacture of a support plate for supporting a substrate in a conventional polishing apparatus. As shown in Fig. 1, a metal layer is provided and has a rough layer 24a disposed on the metal 10, and the rough layer 24a is provided on one of the substrates of the conventional polishing apparatus 10. The rough layer 24a on the mother board 22 is polished through a polishing head 14 of a polishing apparatus 10 to produce a support sheet 20 including a mother board 22 and a polishing layer 24. Since heat is generated in the process of forming the rough layer 24a, the mother board 22 usually becomes warped. Further, since the substrate 12 is located at the bottom of the processing chamber in a polishing process, it is difficult to penetrate the substrate 12 through a fixing member to fix the substrate 12 and the mother substrate 22 to each other, so that the contact surface area of the mother substrate 22 and the substrate 12 is insufficient. Thus, the polishing layer 24 of the 200936306 on the mother board 22 is polished under the unfavorable collapse of the substrate 12 and the mother board 22. As shown in Fig. 1B, when the support plate 2 is separated from the substrate 12 of the polishing apparatus 10, the mother board 22 of the support board 20 is in a warped state. Axe # Since the upper surface of the polishing layer 24 is flattened by the polishing process, the polishing layer 24 on the surface of the mother substrate 22 has a non-uniform thickness. As shown in Fig. 1C, the support plate 20 is mounted in a processing chamber for the flag. When the mother board 22 is completely in contact with the process chamber 3, the polishing layer 24 is deformed by the deformation of the jaws 22. As such, the thickness and extent of the polishing layer 24 along the surface of the motherboard is uneven and undesirable. SUMMARY OF THE INVENTION One embodiment of the present invention provides a fixture for a foot support plate to a polishing apparatus. Said that an embodiment of the present invention provides an optical device comprising the above-described fixed unit. An embodiment of the present invention provides an optical device including the above fixed unit. An embodiment of the present invention provides a method of manufacturing a document using a polishing apparatus. According to some embodiments of the invention, a fixing unit for a polishing apparatus is provided. The polishing apparatus includes a base plate, a support member, and a securing member. The substrate is located on a front surface, and a polishing object is disposed on the front surface. The support member is in surface contact with the back side of one of the substrates and separates the substrate from a bottom. 200936306 The fixing component is used to fix the polishing object to the substrate, and the polishing object is in surface contact with the front surface of the substrate. In an embodiment, the securing element comprises a bolt. Bolts are used to pass the substrate from the back side of the substrate to lock the polishing object to the substrate. A polishing apparatus is provided in accordance with some embodiments. The polishing apparatus includes a fixing unit and a polishing unit. The polishing apparatus includes a substrate, a support member, and a fixing member. The substrate is located on the front side and a polished object is placed on the front side. The baffle element is in surface contact with one of the back sides of the substrate and 隔开 separates the substrate from a bottom. The fixing member is for fixing the polishing object to the substrate, and the polishing object is in surface contact with the front surface of the substrate. The polishing unit is placed above the substrate and the polished object. In an embodiment, the securing element comprises a bolt. Bolts are used to pass the substrate from the back side of the substrate to lock the polishing object to the substrate. In accordance with some embodiments, a planarization method of a layer is provided. The planarization method includes the following steps. A mother board comprising a layer of structure is disposed on a front side of one of the substrates of a polishing apparatus, and the layer structure is located on the upper surface of the mother board. The mother board is fixed to the substrate in such a manner that the mother board is in surface contact with the front surface of the substrate. And 'polishing the layer structure on the polishing device. In an embodiment, the layer structure comprises a ceramic material. According to some embodiments, a method of manufacturing a support plate is provided, the support plate supporting a substrate in a processing chamber. The manufacturing method includes the following steps. A mother board having a flat surface is provided. A layer of structure is formed on one of the upper surfaces of the mother board. The mother board is placed on the front side of one of the substrates of one of the polishing devices. The mother board is placed in surface contact with the front side of the substrate. 'Fixed mother board 5 200936306 Thai, -▲▲矗 to the substrate. The layer structure on the throwing device is then polished. In one embodiment, the manufacturing method further includes the following steps prior to the step of forming the layer structure on the upper surface of the motherboard. A surface treatment process is performed on the upper surface of the mother board to have a uniform surface roughness on the upper surface of the mother board. In one embodiment, the step of forming the layer structure on the upper surface of the motherboard includes the following dream scales. A first dielectric layer is formed to the upper surface of the motherboard. An electrode layer is formed on a portion of the first dielectric layer. Then, a second dielectric layer is formed on the remaining portion of the first dielectric layer and on the electrode layer. In one embodiment, the first dielectric layer and the second dielectric layer comprise a ceramic material, and the true electrode layer comprises a metal. According to an embodiment, a layer of structure can be polished with a mother board in surface contact with a substrate. Therefore, the polishing layer can have a flatness when a support plate is mounted in the processing chamber. Further, the planar layer on the surface of the mother board along the support plate has a uniform thickness. In order to make the above description of the present invention more comprehensible, a preferred embodiment of the present invention will be described in detail below with reference to the accompanying drawings: [Embodiment] The embodiments of the present invention are described with reference to the accompanying drawings. It will be more complete, and embodiments of the invention are illustrated. However, the invention may be embodied in many different forms and should not be limited to the embodiments presented. Rather, these embodiments of the present invention are intended to be thorough and complete, and the scope of the invention may be The dimensions of the components and the relative dimensions of the components in the figures will be adjusted accordingly to clearly illustrate the features of this document. It will be understood that when an element is referred to as being "on" another element or another layer, it may mean that the element is directly on the other element or another layer, or may have other elements or other layers in between. . When a component is referred to as "connected to" another element or another layer, it can mean that the component is directly connected to another component or another layer, or may have other elements or other layers in between. In contrast, when an element is referred to as being "directly on" another element or another layer, there are no other elements in the middle. When a φ component is referred to as “directly” or “connected” to another component or layer, there is no other component in the middle. All the same reference numerals are used to indicate the same elements. "and/or" as used herein includes any and all combinations of one or more of the listed items. It will be appreciated that, although the first, second, etc. items may be used herein to describe various elements, structures, regions, ranges, layers and/or parts, such elements, structures, regions, ranges, layers and/or The parts are not limited to these items. Items are only used to distinguish between elements, structures, regions, ranges, G-layers and/or parts that are different from each other. For example, a first element, a structure, a region, a range, a layer, and/or a part may be numbered as a second element, structure, region, range, layer, and/or portion, without departing from the spirit of the disclosure. Words relating to space such as "bottom", "below", "below", "above", "above" and similar words are used to describe one element or feature and another element or feature in the illustration. The relationship of components or features. In addition, spatially related terms include the orientations drawn by the illustrations, as well as the different orientations in which the device is in use or in operation. For example, if 200936306 ‘ flips the device, another element or feature of the “below” or “bottom” of the original component changes the orientation to another element or another feature of the component “above”. Therefore, the word "below" can include the orientation of the lower and upper directions. The device can be oriented in other ways (by 90° or facing other orientations), and the brigade corresponds to the space-related descriptors in this article. The terminology used herein is for the purpose of describing particular embodiments and is not intended to limit the invention. The singular forms "a" and "the" are also intended to include the plural <RTI ID=0.0> </ RTI> unless the context clearly dictates otherwise. It is to be understood that the phrase "comprising" is used in the specification, and is used in the description The presence or addition of characteristic regions, integers, steps, operations, elements, components, and/or combinations thereof. The cross-sectional views of the embodiments of the invention described herein are illustrative of the preferred embodiments of the invention. Thus, a change in shape, for example, due to manufacturing techniques and/or errors, is contemplated. Thus, embodiments of the invention should not be considered limited to the specific shapes of the regions depicted herein, but include, for example, the <RTIgt; For example, 'a region depicted or described as flat' has rough and/or non-linear features. In addition, the acute angles depicted may be passivated. Therefore, the regions of the present invention are not to be construed as limiting the scope of the invention. Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by those skilled in the art to which the invention pertains. It needs to be further understood that the terms defined by the general dictionary should be interpreted as meanings consistent with the articles in the relevant field and the contents of this disclosure, and will not be interpreted as excessively ideal or overly formal, unless there is a clear definition here. . The invention will be described in detail below with reference to the accompanying drawings. J Figure 2 is a schematic illustration of a polishing apparatus in accordance with an embodiment of the present invention. As shown in Fig. 2, a polishing apparatus 100 according to an embodiment of the present invention includes a fixing unit 110 and a polishing unit 120. The fixing unit 110 can include a substrate 112, a support member 114, and a fixing member 116. In an embodiment, the substrate 112 may be a plate, and a support plate 20 may be disposed on a front surface of the substrate 112. The support plate 20 can support and/or secure a processing object, such as a semiconductor substrate located within a predetermined processing chamber. The support member 114 can be in contact with the back surface opposite to the front surface of the substrate and support the substrate 112. In the present embodiment, a plurality of support members 114 may be disposed along the peripheral portion of the substrate 112 at substantially the same pitch. Therefore, the substrate 112 is disposed on the support member 114 with higher stability. Additionally, the substrate can be spaced apart from the bottom by the support member 114. In an embodiment, the securing member 116 can secure the support plate 20 to the substrate 112. For example, the securing member 116 includes a plurality of bolts for locking upwardly from the back of the substrate 112 to secure the substrate 112 to the motherboard 22 of the support plate 20 to each other. The bolts 116 are spaced apart at substantially the same pitch to allow multiple attachments between the motherboard 22 and the substrate 112 200936306. Therefore, the mother board 22 and the substrate 122 can be in close contact with each other on the surface of the mother board 22. Even if various external forces which may cause deformation of the mother board 22 act on the mother board 22, the fixing member 116 can resist external force and prevent the mother board from being deformed by external force. Thus, the mother board 22 can be stably fixed to the substrate 12 to obtain a high degree of flatness. - The polishing unit 120 may be placed above the fixing unit 11A and used to polish a rough layer 24 coated on the upper surface of the mother board 22. Since the rough layer 24 is polished under a flatness, the polishing layer on the upper surface of the mother substrate 22 has a uniform thickness and thus has a high degree of planarity. Although not shown in the drawings, the polishing unit 120 can be moved up and down with respect to the polishing plate 20 through a driving unit (not shown), and moved horizontally and parallel to the polishing plate 20. 3A to 3E are views showing a manufacturing flow of the support plate using the polishing apparatus shown in Fig. 2. As shown in Fig. 3A, a mother board 210 may be provided and the surface of the mother board 210 may be flat. In a process, a motherboard can be used to support and secure a substrate (not shown). The substrate may comprise a semiconductor substrate of a semiconductor device and a glass substrate of a liquid crystal display (LCD) device. The mother board 210 may form a stepped c i rcu 1 ar disk or a stepped rectangular plate by a cutting or grinding process. The motherboard may contain a metal such as Ming (Al). Then, a sand blasting process and a shot blasting process can be performed on the upper surface of one of the mother boards 210. Thus, 10 200936306 can have a uniform surface roughness of the entire upper surface of the mother board 210. As shown in Fig. 3B, a rough layer 220a can be applied to the upper surface of the mother substrate 210 through a coating process such as a spray coating process. Since the upper surface has a uniform surface roughness, the rough layer 220a can be closely adhered to the upper surface of the mother board 210. • In one embodiment, the coarse germ layer 220a can form a single layer structure comprising a ceramic material. The Tauman material may comprise a composition of Al2O3, oxidized in B (Y2〇3), alumina and alumina, yttrium oxide (Zr〇2), carbon bismuth (A1C), titanium nitride. (TiN), aluminum nitride (A1N), titanium carbide (TiC), magnesium oxide (MgO), calcium oxide (CaO), cerium oxide (Ce〇2), titanium oxide (Ti〇〇, boron carbide (BxCy), Boron nitride (BN), yttrium oxide (Si〇2), lanthanum carbide (SiC), yttrium aluminum garnet (YAG, YsAhOu), aluminosilicate (3Al2〇3 · 2Si〇3), aluminum fluoride (A1F3), etc. The above materials may be used singly or in combination. The substrate and the mother substrate 21 may be electrically isolated from each other by the rough layer 220a. When a high frequency power source acts on the mother board 210, an electrostatic force is generated. On the rough layer 22〇a. In one embodiment, the rough layer 220a can form a multi-layer structure comprising a plurality of constituent layers (C〇mp〇nent layer). For example, the coarse layer 220a The first dielectric layer, an electrode layer and a second dielectric layer may be disposed on the upper surface of the motherboard 210. The electrode layer is located on the first dielectric layer a portion of the surface, the second dielectric layer is located on an upper surface of the electrode layer and other portions of the upper surface of the first dielectric layer. The first dielectric layer and the second dielectric layer may include a ceramic material, and the electrode layer may Including a metal. For example, the ceramic materials of the first dielectric layer and the second dielectric layer may comprise aluminum oxide (Al2〇3), yttrium oxide (γ2〇3), oxygen 11 200936306 aluminum and yttrium oxide. Zirconium oxide (ZrOO, aluminum carbide (A1C), titanium nitride (TiN), aluminum nitride (A1N), titanium carbide (Tic), yttrium oxide (%0), oxidized word (ca〇), yttrium oxide ( Ce〇2), titanium oxide (Ti〇2), boron carbide (BxCy), boron nitride (BN), yttrium oxide (si〇2), tantalum carbide (SiC), Ji Shaoshiquan stone (yag, Υ3Α15〇ΐ2 ), Gaoming andalusite (aluminosilicate, 3Al2〇3 · 2Si〇3), aluminum fluoride (A1F3), etc. The above materials may be used singly or in combination. For example, the metal of the electrode layer may contain tungsten (W), Molybdenum (Mo) and its alloys. The multi-layered rough layer 220a can also be electrically separated from the substrate and the mother substrate 21. In addition, when the electricity source 13 acts on multiple layers of coarse In the electrode layer of the layer 220a, an electrostatic force is generated on the rough layer 220a. Therefore, the substrate can be fixed to the mother board 210 by electrostatic force. As shown in Fig. 3C, the mother board 210 including the rough layer 220a is polished. The front side of the substrate 112 of the device 100. The fixing member 116, for example, a plurality of bolts, can be locked upward from the back surface of the substrate 112 and can penetrate the substrate 112. Therefore, the mother board 22 can be fixed to the substrate 112 through the fixing member ❹ 116 '. In the cutting process, the polishing process, the surface treatment process, and the coating process, various external forces that cause the mother substrate 210 to warp, for example, physical shock and heat, act on the mother board 210. However, even under the action of an external force, the mother board 210 and the substrate 112 can be in close contact with each other on the surface of the mother board 21''. That is, the fixing member 116 can resist external force and prevent the mother board 210 from being deformed by the action of an external force. Therefore, the mother board 22 can be stably fixed to the substrate 112' to obtain high flatness. Then, the polishing unit 12A can be brought into contact with the upper surface of the rough germ layer 220a and moved horizontally on the upper surface of the rough germ layer 220a to squash the rough layer 220a to a uniform thickness. Therefore, the 'rough germ layer 220a' forms a flat layer 220° having a high flatness. As shown in FIG. 3D, in order to form the support plate 200 including the mother board and the kite layer 220, the mother board 210 and the substrate of the polishing apparatus 11 The 112 series is separated. However, the mother board 210 and the substrate 112 are separated from each other', thereby causing a decrease in the flatness of the plane layer 200. ❹ As shown in FIG. 3E, when the support plate 200 is mounted in a processing chamber 30 for performing a necessary process on the substrate, the mother board 210 of the support board 2 can be in surface contact with the processing chamber 30 and Fixed to the processing room go. Therefore, in the process chamber 30, the planar layer 220 of the support plate 200 may have a uniform thickness along the entire upper surface of the mother substrate 21A and may have a high flatness. When the planar layer 220 is formed into a single layer structure, the support plate 2 can serve as a lower electrode in the processing chamber 30. Further, when the planar layer 22 is formed in a multi-layered structure, the floor panel 200 can be used as a processing chamber to be kicked. Electrically, according to some embodiments, the rough layer can be polished with a mother sheet in contact with and bonded to a row of faces. Therefore, the polishing layer can have a high degree of flatness when the slab is disposed in the processing chamber. In addition, the planar layer on the surface of the mother board along the riser has a uniform thickness. The above description of the present invention is not intended to limit the invention. The present invention has been disclosed in some embodiments, and is not intended to limit the invention. It is to be understood by those skilled in the art that the present invention can be made without departing from the spirit and scope of the invention, and the scope of the present invention is attached to the _& The scope of the patent application scope of the stupid attachment 13 200936306 is subject to change. In the context of the patent application, means-plus-function descriptions are used to cover all structures that perform the aforementioned functions, and include not only structural equivalents but also similar structures. Therefore, the foregoing is only illustrative of the invention and is not intended to limit the scope of the invention to the specific embodiments. Further, various modifications and other embodiments of the above-described embodiments are possible without departing from the spirit and scope of the invention. The scope of the invention is defined by the scope of the appended claims. BRIEF DESCRIPTION OF THE DRAWINGS Figs. 1A to 1C are views showing the manufacture of a support plate for supporting a substrate in a conventional polishing apparatus. Fig. 2 is a view showing a polishing apparatus according to an embodiment of the present invention. 3A to 3E are views showing a manufacturing flow of the support plate using the polishing apparatus shown in Fig. 2. [Main component symbol description] 10, 100: polishing device 30: processing chamber 12, 112: substrate 110: fixing unit 114: supporting member 116: bonding member 120: polishing unit 220: planar layer 14: polishing head 20, 200: support Plate 22, 210: mother plate 24: polishing layer 24a, 220a: coarse germ layer