JP2008277781A - Vertical wafer board - Google Patents
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- JP2008277781A JP2008277781A JP2008076240A JP2008076240A JP2008277781A JP 2008277781 A JP2008277781 A JP 2008277781A JP 2008076240 A JP2008076240 A JP 2008076240A JP 2008076240 A JP2008076240 A JP 2008076240A JP 2008277781 A JP2008277781 A JP 2008277781A
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- 230000003746 surface roughness Effects 0.000 claims abstract description 34
- 239000011248 coating agent Substances 0.000 claims abstract description 33
- 238000000576 coating method Methods 0.000 claims abstract description 33
- 238000000034 method Methods 0.000 claims abstract description 13
- 238000005498 polishing Methods 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 7
- 239000002245 particle Substances 0.000 abstract description 13
- 239000000758 substrate Substances 0.000 abstract description 9
- 238000011109 contamination Methods 0.000 abstract description 8
- 235000012431 wafers Nutrition 0.000 description 88
- 229910010271 silicon carbide Inorganic materials 0.000 description 73
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 70
- 238000005229 chemical vapour deposition Methods 0.000 description 21
- 230000000052 comparative effect Effects 0.000 description 9
- 239000013078 crystal Substances 0.000 description 9
- 239000007789 gas Substances 0.000 description 8
- 239000002994 raw material Substances 0.000 description 8
- 238000003780 insertion Methods 0.000 description 7
- 230000037431 insertion Effects 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 239000011247 coating layer Substances 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 5
- 239000012159 carrier gas Substances 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000005245 sintering Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000005055 methyl trichlorosilane Substances 0.000 description 3
- JLUFWMXJHAVVNN-UHFFFAOYSA-N methyltrichlorosilane Chemical compound C[Si](Cl)(Cl)Cl JLUFWMXJHAVVNN-UHFFFAOYSA-N 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000007872 degassing Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 150000003377 silicon compounds Chemical class 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910003902 SiCl 4 Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 150000001722 carbon compounds Chemical class 0.000 description 1
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 238000005488 sandblasting Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
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Abstract
Description
本発明は、縦型ウエハボートに関し、半導体製造プロセスで用いられる縦型ウエハボートに関する。 The present invention relates to a vertical wafer boat, and more particularly to a vertical wafer boat used in a semiconductor manufacturing process.
半導体製造プロセスのうちで加熱を伴う工程、例えば、ＬＰ−ＣＶＤ（low pressure−chemical vapor deposition：低圧ＣＶＤ）によるＳｉ3Ｎ4（窒化ケイ素）膜デポ工程において、基材表面が多結晶のＳｉＣ（炭化ケイ素）により被覆されたＳｉＣ縦型ウエハボートが用いられている。
この縦型ウエハボートは、ＳｉＣの基材表面にＣＶＤ（化学気相成長）法によるＳｉＣコーティングを施し、高純度のＳｉＣ被覆層を基材表面に形成したものである。この縦型ウエハボートにあっては、基材内部から外方への不純物の拡散を抑制することができる。
In a process involving heating in a semiconductor manufacturing process, for example, a Si 3 N 4 (silicon nitride) film deposition process by LP-CVD (low pressure-chemical vapor deposition: low pressure CVD), the substrate surface is made of polycrystalline SiC ( SiC vertical wafer boats coated with silicon carbide) are used.
This vertical wafer boat is obtained by applying a SiC coating by a CVD (chemical vapor deposition) method to the surface of a SiC substrate and forming a high-purity SiC coating layer on the surface of the substrate. In this vertical wafer boat, diffusion of impurities from the inside of the substrate to the outside can be suppressed.
しかしながら、ＳｉＣ被覆層を基材表面に形成したＳｉＣ縦型ボートにあっては、半導体ウエハへのＳｉ3Ｎ4等のＣＶＤ膜形成の際に、当該ＣＶＤ膜の剥がれによるパーティクル汚染を生じるおそれがあり、比較的頻繁にＣＶＤ膜の洗浄、除去作業を行う必要があった。
そのため、前記ＣＶＤ膜の密着強度を向上させる方法として、例えば、特許文献１のようにサンドブラスト等の表面処理でウエハボート表面を適度に粗面化する方法が提案されている。
However, in an SiC vertical boat in which a SiC coating layer is formed on the surface of a base material, there is a risk of causing particle contamination due to peeling of the CVD film when forming a CVD film such as Si 3 N 4 on a semiconductor wafer. In other words, the CVD film needs to be cleaned and removed relatively frequently.
Therefore, as a method for improving the adhesion strength of the CVD film, for example, a method for appropriately roughening the surface of the wafer boat by surface treatment such as sandblasting has been proposed as disclosed in
また、当該ＳｉＣ縦型ボートにあっては、ＳｉＣ被膜層が多結晶のＳｉＣ粒子からなりこの表面に露出するＳｉＣ粒子が大きく、鋭角であると、これに搭載されるウエハに傷やスリップが生じる虞がある。そのため、ウエハが搭載されるウエハ当接部のみ若しくはボート全体を研磨し、フラット化することで、傷やスリップ発生を防止する方法が検討されている。
ところで、前記した特許文献１において提案されているＳｉＣ縦型ウエハボートは、ＳｉＣ被覆層の研磨面に、当該研磨に伴うマイクロダメージ（マイクロクラック等）が残存するため、半導体ウエハの製造工程で受ける昇降温、また／若しくはＣＶＤ膜の除去のための酸洗浄の繰り返し等によって、ＳｉＣ被覆層が破損し、ＳｉＣ膜自体もしくはＣＶＤ膜の剥がれによるパーティクル発生やＳｉＣ基材からの不純物拡散によるウエハ汚染の虞がある。
By the way, the SiC vertical wafer boat proposed in the above-mentioned
本発明は、上記課題を解決するためになされたものであり、ウエハに傷やスリップの発生をより確実に抑制し、かつパーティクル汚染を生じさせない縦型ウエハボートを提供することを目的とするものである。 The present invention has been made to solve the above-described problems, and an object of the present invention is to provide a vertical wafer boat that more reliably suppresses the generation of scratches and slips on the wafer and does not cause particle contamination. It is.
本発明は上記目的を達成するために成されたものであり、ウエハを搭載するための棚部が形成された複数本の支柱と、前記支柱の上下端部を固定する天板及び底板とを備えた、ＳｉＣ質基材の表面にＳｉＣ被覆膜が形成された縦型ウエハボートにおいて、前記棚部におけるウエハ当接部が第１のＳｉＣ被膜形成後に研磨によるフラット化処理を行い、その上面に第２のＳｉＣ被膜が形成され、かつその表面の表面粗さＲａが０．１μｍ以上０．９μｍ以下であって、前記ウエハ当接部を除く部分が、第１のＳｉＣ被膜形成後にその上面に第２のＳｉＣ膜が形成され、かつその表面粗さＲａが１．０μｍ以上８．０μｍ以下であることを特徴としている。 The present invention has been made to achieve the above object, and includes a plurality of columns on which a shelf for mounting a wafer is formed, and a top plate and a bottom plate for fixing upper and lower ends of the columns. In a vertical wafer boat provided with a SiC coating film on the surface of a SiC substrate, the wafer abutting portion in the shelf performs a flattening process by polishing after the first SiC coating is formed, and the upper surface thereof And the surface roughness Ra of the surface is 0.1 μm or more and 0.9 μm or less, and a portion excluding the wafer contact portion is formed on the upper surface after the first SiC film is formed. The second SiC film is formed, and the surface roughness Ra is 1.0 μm or more and 8.0 μm or less.
このように、前記棚部におけるウエハ当接部が第１のＳｉＣ被膜形成後に研磨によるフラット化処理を行い、その上面に第２のＳｉＣ被膜が形成され、かつその表面の表面粗さＲａが０．１μｍ以上０．９μｍ以下であるため、表面にマイクロクラックの如きダメージが残存することがなく、また適度な表面粗さになっていることで、上述したパーティクルの発生が抑制され、ウエハの傷やスリップの発生をより確実に抑制することができると共に、ＳｉＣ膜破損による不純物汚染の虞がない。 As described above, the wafer contact portion in the shelf performs the flattening process by polishing after the first SiC film is formed, the second SiC film is formed on the upper surface, and the surface roughness Ra of the surface is 0. Since it is 1 μm or more and 0.9 μm or less, damage such as microcracks does not remain on the surface, and since the surface has an appropriate surface roughness, the generation of the above-described particles is suppressed, and the scratches on the wafer And the occurrence of slips can be more reliably suppressed, and there is no risk of impurity contamination due to SiC film breakage.
また、ウエハ当接部を除く部分が、第１のＳｉＣ被膜形成後にその上面に第２のＳｉＣ膜が形成され、かつその表面粗さＲａが１．０μｍ以上８．０μｍ以下となっている。つまり、表面粗さＲａが０．７μｍ〜７．５μｍ程度の第１のＳｉＣ被膜の表面に、更に上記第２の微細なＳｉＣ被覆膜が形成され、その表面が上記表面粗さとなっているため、ＣＶＤ膜が付着した際、アンカー効果が大きく、ＣＶＤ膜の剥離をより効果的に抑制することができる。 Further, the second SiC film is formed on the upper surface of the portion excluding the wafer contact portion after the first SiC film is formed, and the surface roughness Ra is 1.0 μm or more and 8.0 μm or less. That is, the second fine SiC coating film is further formed on the surface of the first SiC film having a surface roughness Ra of about 0.7 μm to 7.5 μm, and the surface has the surface roughness. Therefore, when the CVD film adheres, the anchor effect is large, and the peeling of the CVD film can be more effectively suppressed.
本発明によれば、ウエハに傷やスリップの発生をより確実に抑制し、かつパーティクル汚染を抑制できる縦型ウエハボートを得ることができる。 ADVANTAGE OF THE INVENTION According to this invention, the vertical wafer boat which can suppress generation | occurrence | production of the damage | wound and slip to a wafer more reliably, and can suppress particle contamination can be obtained.
以下に、本発明にかかる一実施形態について、図１乃至図３に基づいて説明する。なお、図１は本発明の一実施形態にかかる縦型ウエハボートを示す斜視図、図２は図１に示した縦型ウエハボートの要部拡大図、図３は図１に示した縦型ウエハボートの製造方法を示す図である。 An embodiment according to the present invention will be described below with reference to FIGS. 1 to 3. 1 is a perspective view showing a vertical wafer boat according to an embodiment of the present invention, FIG. 2 is an enlarged view of a main part of the vertical wafer boat shown in FIG. 1, and FIG. 3 is a vertical type shown in FIG. It is a figure which shows the manufacturing method of a wafer boat.
図１に示すように、この縦型ウエハボート１は、成膜処理されるウエハＷを搭載するための棚部２ａが形成された複数本の支柱２と、前記支柱２の上下端部を固定する天板３及び底板４とを備えている。
なお、前記ＳｉＣ質基材としては、反応焼結ＳｉＣすなわちカーボン成分を含むＳｉＣ焼成体にＳｉを含浸し、前記カーボン成分とＳｉの一部が反応し、ＳｉＣ化されたＳｉ−ＳｉＣであることが好ましく、ＳｉＣの成形体を高温で熱処理した再結晶質ＳｉＣ、焼結助剤を添加し焼結した自焼結ＳｉＣ等でもよい。
As shown in FIG. 1, the
The SiC base material is Si-SiC obtained by reacting sintered SiC, that is, a SiC fired body containing a carbon component with Si, and reacting part of the carbon component with Si to form SiC. It is preferable to use recrystallized SiC obtained by heat-treating a molded body of SiC at a high temperature, self-sintered SiC obtained by adding a sintering aid and sintering.
また、図２に示すように、前記棚部２ａの上面部２ａ１は、ウエハＷを載置するウエハ載置部である。この上面部（ウエハ載置部）２ａ１の先端部には先端面取り部２ａ２が形成され、左右側面部には、側部面取り部２ａ３が形成されている。尚、図中、この先端面取り部２ａ２、側部面取り部２ａ３は平面状に示されているが、これに限定されるものではなく、曲面状、いわゆるＲ形状に形成されていても良い。
As shown in FIG. 2, the
また、前記ウエハ載置部２ａ１と、このウエハ載置部２ａ１と連続し隣接する先端面取り部２ａ２及び側部面取り部２ａ３、更にこのウエハ載置部２ａ１と連続し隣接する、支柱２のウエハ挿入側側面２ｂの下側部２ｂ１（ウエハ載置部２ａ１上面から寸法ｔの部分）は、ウエハが接する部分あるいは接する可能性がある部分であり、これらが成膜処理等の間にウエハが当接するウエハ当接部である。
このウエハ当接部は、表面粗さがＲａが０．７μｍ〜７．５μｍの第１のＳｉＣ被膜形成後に研磨によるフラット化処理を行い、その上面に第２のＳｉＣ被膜が形成され、かつその表面の表面粗さＲａが０．１μｍ以上０．９μｍ以下に形成されている。
Further, the wafer mounting portion 2a1, the tip chamfered portion 2a2 and the side chamfered portion 2a3 that are continuous and adjacent to the wafer mounting portion 2a1, and the wafer insertion of the
The wafer contact portion is flattened by polishing after the first SiC film having a surface roughness Ra of 0.7 μm to 7.5 μm, and a second SiC film is formed on the upper surface thereof, and The surface roughness Ra of the surface is 0.1 μm or more and 0.9 μm or less.
このように、第１のＳｉＣ被膜形成後に研磨によるフラット化処理を行い、その上面に第２のＳｉＣ被膜が形成され、かつその表面の表面粗さＲａが０．１μｍ以上０．９μｍ以下に形成されているため、表面にマイクロクラックの如きダメージが残存することがなく、また適度な表面粗さになっていることで、上述したパーティクルの発生が抑制され、ウエハのスリップをより確実に抑制することができると共に、ＳｉＣ膜破損による不純物汚染の虞がない。 Thus, the flattening process by polishing is performed after the first SiC film is formed, the second SiC film is formed on the upper surface, and the surface roughness Ra of the surface is 0.1 μm or more and 0.9 μm or less. Therefore, damage such as microcracks does not remain on the surface and the surface roughness is moderate, so that the generation of the above-mentioned particles is suppressed, and the wafer slip is more reliably suppressed. In addition, there is no risk of impurity contamination due to SiC film breakage.
ここで、前記表面の表面粗さＲａが０．１μｍ未満では、ウエハ載置部２ａ１上にウエハを載置した際に、滑りが生じ、ウエハボート移動時にウエハが落下するおそれがあり、あるいは高温環境下でウエハを加熱処理した場合にウエハがボートの当接部で融着するおそれがあり好ましくなく、また表面の表面粗さＲａが０．９μｍを超える場合には、ウエハ搭載時あるいは成膜処理等を行なった際に、ウエハ裏面に傷やスリップが生じることとなり好ましくない。 Here, if the surface roughness Ra of the surface is less than 0.1 μm, slipping may occur when the wafer is placed on the wafer placement portion 2a1, and the wafer may fall when the wafer boat is moved, or the temperature may be high. If the wafer is heat-treated in an environment, the wafer may be fused at the contact portion of the boat, which is not preferable. If the surface roughness Ra exceeds 0.9 μm, the wafer is mounted or deposited. When processing or the like is performed, scratches and slips are generated on the back surface of the wafer, which is not preferable.
また、ウエハ当接部を除く部分（ウエハ載置部２ａ１と、先端面取り部２ａ２、側部面取り部２ａ３、ウエハ挿入側側面２ｂの下側部２ｂ１以外の部分）は、第１のＳｉＣ被膜形成後にその上面に第２のＳｉＣ膜が形成され、かつその表面粗さＲａが１．０μｍ以上８．０μｍ以下となっている。
つまり、表面粗さＲａが０．７μｍ〜７．５μｍの第１のＳｉＣ被膜の表面に、更に上記表面粗さＲａで０．１μｍ以上０．９μｍ以下となる第２のＳｉＣ被覆膜が形成され、その表面がＲａ１．０μｍ〜８．０μｍとなっているため、ＣＶＤ膜が付着した際、アンカー効果が大きく、ＣＶＤ膜の剥離をより効果的に抑制することができる。
Further, a portion other than the wafer contact portion (a portion other than the wafer mounting portion 2a1, the tip chamfered portion 2a2, the side chamfered portion 2a3, and the lower portion 2b1 of the wafer
That is, a second SiC coating film having a surface roughness Ra of 0.1 μm to 0.9 μm is formed on the surface of the first SiC film having a surface roughness Ra of 0.7 μm to 7.5 μm. And since the surface is Ra1.0micrometer-8.0micrometer, when a CVD film adheres, an anchor effect is large and it can suppress peeling of a CVD film more effectively.
ここで、ウエハ当接部を除く部分の表面粗さがＲａ１．０μｍ未満の場合には、ＣＶＤ膜の剥離抑制効果がなく、また表面粗さが８．０μｍを超える場合には、縦型ボートの移送あるいはセッティングの際に移送用治具等との接触によってパーティクルが発生し、好ましくない。 Here, when the surface roughness of the portion excluding the wafer contact portion is less than Ra 1.0 μm, there is no effect of suppressing the peeling of the CVD film, and when the surface roughness exceeds 8.0 μm, the vertical boat During the transfer or setting, particles are generated by contact with a transfer jig or the like, which is not preferable.
次に、本発明にかかる縦型ウエハボートの製造方法について、図３に基づいて説明する。
先ず、ＳｉＣ質基材を支柱２、天板３、底板４を所定の形状に機械加工し、またこれら基材の表面を研磨し、所定の表面粗さを有する部材を製作する。例えば支柱２には、図３（ａ）に示すように、棚部２ａが形成される。
そして、図３（ｂ）に示すように、これら部材の表面に、表面粗さＲａが概ね０．７μｍ〜７．５μｍとなるように、例えば、結晶粒径５μｍ以上３０μｍ以下のＳｉＣの結晶粒を有する第１のＳｉＣ被覆膜ＡをＣＶＤ法により形成する。
Next, the manufacturing method of the vertical wafer boat concerning this invention is demonstrated based on FIG.
First, the
Then, as shown in FIG. 3B, on the surfaces of these members, for example, SiC crystal grains having a crystal grain size of 5 μm to 30 μm so that the surface roughness Ra is approximately 0.7 μm to 7.5 μm. A first SiC coating film A having the following is formed by a CVD method.
続いて、図３（ｃ）に示すように、棚部２ａのウエハ載置部２ａ１、先端面取り部２ａ２、側部面取り部２ａ３、支柱２のウエハ挿入側面２ｂの下側部２ｂ１に形成された前記第１のＳｉＣ被覆膜Ａを、表面粗さＲａが０．１μｍ未満となるように研磨加工（フラット化処理）する。
Subsequently, as shown in FIG. 3C, the wafer mounting portion 2a1, the tip chamfered portion 2a2, the side chamfered portion 2a3 of the
更に、図３（ｄ）に示すように、これら部材の表面全域に、前記研磨面の表面粗さＲａが０．１μｍ以上０．９μｍ以下となるように、例えば、結晶粒径０．１μｍ以上５μｍ以下のＳｉＣの結晶粒を有する第２のＳｉＣ被覆膜ＢをＣＶＤ法により形成する。 Further, as shown in FIG. 3D, for example, the crystal grain size is 0.1 μm or more so that the surface roughness Ra of the polishing surface is 0.1 μm or more and 0.9 μm or less over the entire surface of these members. A second SiC coating film B having SiC crystal grains of 5 μm or less is formed by a CVD method.
その結果、棚部２ａのウエハ載置部２ａ１、先端面取り部２ａ２、側部面取り部２ａ３、支柱２のウエハ挿入側面２ｂの下側部２ｂ１の上面は、フラット化処理化された第１のＳｉＣ被覆膜Ａの表面に第２のＳｉＣ被覆膜Ｂが形成され、表面粗さＲａが０．１μｍ以上０．９μｍ以下の構造となる。
As a result, the wafer mounting portion 2a1, the tip chamfered portion 2a2, the side chamfered portion 2a3 of the
また、棚部２ａのウエハ載置部２ａ１、先端面取り部２ａ２、側部面取り部２ａ３、支柱２のウエハ挿入側面２ｂの下側部２ｂ１の上面を除いた部分には、比較的粗い表面のＳｉＣ被覆膜Ａの表面に微細な粗さとなるＳｉＣ被覆膜Ｂが形成され、表面粗さＲａが１．０μｍ以上８．０μｍ以下の構造となる。
In addition, the portion of the
なお、異なる結晶粒を有するＳｉＣ被覆膜Ａ，Ｂは、公知のＣＶＤ法において処理温度、原料ガス比、減圧程度を適宜に変えることによって、形成することができる。
結晶粒径５μｍ以上３０μｍ以下のＳｉＣの結晶粒を有するＳｉＣ被覆膜Ａを形成するには、例えば、５００ｔｏｒｒ以下に減圧脱気後、１０℃／分の昇温速度で１０００〜１４００℃まで加熱し、次いで原料化合物をキャリアガスとともに導入した後、さらに１０℃／分の昇温速度で１０００〜１４００℃の成膜温度に加熱し、圧力を０〜５００ｔｏｒｒの成膜圧力に調整する。次いで、原料化合物をキャリアガスとともに導入し、原料化合物を熱分解または化学反応させることにより、前記ＳｉＣ被覆膜を形成することができる。
The SiC coating films A and B having different crystal grains can be formed by appropriately changing the processing temperature, the raw material gas ratio, and the reduced pressure in a known CVD method.
In order to form SiC coating film A having SiC crystal grains having a crystal grain size of 5 μm or more and 30 μm or less, for example, after degassing under reduced pressure to 500 torr or less, heating to 1000 to 1400 ° C. at a heating rate of 10 ° C./min. Then, after introducing the raw material compound together with the carrier gas, it is further heated to a film forming temperature of 1000 to 1400 ° C. at a temperature rising rate of 10 ° C./min, and the pressure is adjusted to a film forming pressure of 0 to 500 torr. Next, the SiC coating film can be formed by introducing the raw material compound together with the carrier gas and thermally decomposing or reacting the raw material compound.
また、結晶粒径０．１μｍ以上５μｍ以下のＳｉＣの結晶粒を有するＳｉＣ被覆膜Ｂを形成するには、例えば、５００ｔｏｒｒ以下に減圧脱気後、１０℃／分の昇温速度で１０００〜１３００℃まで加熱し、次いで非酸化性ガスを導入した後、さらに１０℃／分の昇温速度で１０００〜１３００℃の成膜温度に加熱し、圧力を０〜５００ｔｏｒｒの成膜圧力に調整する。次いで、原料化合物をキャリアガスとともに導入し、原料化合物を熱分解または化学反応させることにより、前記ＳｉＣ被覆膜を形成することができる。 In order to form the SiC coating film B having SiC crystal grains having a crystal grain size of 0.1 μm or more and 5 μm or less, for example, after degassing under reduced pressure to 500 torr or less, the temperature is increased from 1000 to 1000 ° C. After heating to 1300 ° C. and then introducing a non-oxidizing gas, the film is further heated to a film formation temperature of 1000 to 1300 ° C. at a temperature increase rate of 10 ° C./min, and the pressure is adjusted to a film formation pressure of 0 to 500 torr. . Next, the SiC coating film can be formed by introducing the raw material compound together with the carrier gas and thermally decomposing or reacting the raw material compound.
尚、原料化合物としては、例えば、ＣＨ3ＳｉＣｌ3、ＣＨ3ＳｉＨＣｌ2などの分子内にＳｉ原子とＣ原子を含む有機ケイ素化合物が挙げられる。また、原料化合物として、ＳｉＣｌ4のようなケイ素化合物とＣＨ4などの炭素化合物とを併用してもよい。キャリアガスとしては、水素やアルゴンなどの非酸化性ガスが例示される。 As the starting compound, for example, an organic silicon compound containing Si atoms and C atom in the molecule such as CH 3 SiCl 3, CH 3 SiHCl 2. Further, as the starting compound, it may be used in combination with carbon compounds such as silicon compounds and CH 4 as SiCl 4. Examples of the carrier gas include non-oxidizing gases such as hydrogen and argon.
更に、本発明にかかる実施例について説明する。
（実施例１）
先ず、反応焼結法によってＳｉ−ＳｉＣ基材からなる３本の支柱、天板、底板を製作し、これら基材の表面を研磨し、算術平均表面粗さＲａ（ＪＩＳ Ｂ０６０１−２００１）が、２．０μｍの部材を製作した。そして、これら部材を組立て、６インチ用のボートを製作した。
更に、ＣＶＤ炉内７０ｔｏｒｒ、１２００℃の条件下で、メチルトリクロロシランとＨ2ガスを、流量比３：３０で適量導入し、前記６インチ用のボートを構成する支柱、天板、底板の表面に、厚さ５０μｍの第１のＳｉＣ被覆膜を形成した。このときのＲａは２．５μｍであった。
Furthermore, the Example concerning this invention is described.
Example 1
First, three struts, a top plate, and a bottom plate made of a Si—SiC base material are produced by a reactive sintering method, the surfaces of these base materials are polished, and an arithmetic average surface roughness Ra (JIS B0601-2001) is A 2.0 μm member was produced. These members were assembled to produce a 6-inch boat.
Furthermore, under conditions of 70 torr and 1200 ° C. in the CVD furnace, appropriate amounts of methyltrichlorosilane and H 2 gas are introduced at a flow ratio of 3:30, and the surfaces of the columns, top plate, and bottom plate constituting the 6-inch boat Then, a first SiC coating film having a thickness of 50 μm was formed. At this time, Ra was 2.5 μm.
そして、ウエハ当接部におけるＳｉＣ被覆膜をメッシュ８００のダイヤモンド砥石で研磨し、Ｒａを０．０１μｍにした。
更に、ＣＶＤ炉内５０ｔｏｒｒ、１１００℃の条件下で、メチルトリクロロシランとＨ2ガスを、流量比３：３０で適量導入し、前記６インチ用のボートを構成する支柱、天板、底板の表面に第２のＳｉＣ被覆膜を形成した。
このときのウエハ当接部の表面粗さ及びウエハ当接部以外のＲａは、表１に示すように、０．５μｍ、２．５μｍであった。
Then, the SiC coating film at the wafer contact portion was polished with a diamond whetstone of mesh 800 to make Ra 0.01 μm.
Furthermore, under conditions of 50 torr and 1100 ° C. in the CVD furnace, appropriate amounts of methyltrichlorosilane and H 2 gas are introduced at a flow ratio of 3:30, and the surfaces of the columns, top plate, and bottom plate constituting the 6-inch boat A second SiC coating film was formed.
At this time, the surface roughness of the wafer contact portion and Ra other than the wafer contact portion were 0.5 μm and 2.5 μm, as shown in Table 1.
（実施例２〜実施例５）
上記実施例１における上記ＣＶＤ法の条件のうち処理温度、原料ガス比、減圧程度を適宜に変えることにより、表１に示すようなウエハ当接部の表面粗さ及びウエハ当接部以外の表面粗さのウエハボートを得た。
(Example 2 to Example 5)
By appropriately changing the processing temperature, the raw material gas ratio, and the reduced pressure level among the conditions of the CVD method in Example 1, the surface roughness of the wafer contact portion and the surface other than the wafer contact portion as shown in Table 1 A rough wafer boat was obtained.
（比較例１）
実施例１と同様に、反応焼結法によってＳｉ−ＳｉＣ基材からなる３本の支柱、天板、底板を製作し、これら基材の表面を研磨し、算術平均表面粗さＲａ（ＪＩＳ Ｂ０６０１−２００１）が、２．０μｍの部材を製作した。そして、これら部材を組立て、６インチ用のボートを製作した。
更に、ＣＶＤ炉内７０ｔｏｒｒ、１２００℃の条件下で、メチルトリクロロシランとＨ2ガスを、流量比３：３０で適量導入し、前記６インチ用のボートを構成する支柱、天板、底板の表面に、厚さ５０μｍの第１のＳｉＣ被覆膜を形成した。このときのウエハ当接部及びそれ以外の部分のＲａは２．５μｍ、２．４μｍであった。
その後のウエハ当接部の研磨、第２のＳｉＣ被覆膜の形成を行なうことなく、比較例１とした。
(Comparative Example 1)
In the same manner as in Example 1, three struts, a top plate, and a bottom plate made of a Si—SiC substrate were manufactured by a reactive sintering method, the surfaces of these substrates were polished, and an arithmetic average surface roughness Ra (JIS B0601) was obtained. -2001) produced a 2.0 μm member. These members were assembled to produce a 6-inch boat.
Furthermore, under conditions of 70 torr and 1200 ° C. in the CVD furnace, appropriate amounts of methyltrichlorosilane and H 2 gas are introduced at a flow ratio of 3:30, and the surfaces of the columns, top plate, and bottom plate constituting the 6-inch boat Then, a first SiC coating film having a thickness of 50 μm was formed. At this time, Ra of the wafer contact portion and the other portions was 2.5 μm and 2.4 μm.
It was set as the comparative example 1 without performing grinding | polishing of a wafer contact part after that, and formation of a 2nd SiC coating film.
（比較例２）
比較例１において、第１のＳｉＣ被覆膜を形成した後、ウエハ当接部をＲａが０．０１μｍとなるように研磨を行なったものを、比較例２とした。
（比較例３〜比較例５）
比較例３〜５は、上記実施例１と同様に処理し、第２のＳｉＣ被覆膜を形成する際、上記ＣＶＤ法の条件のうち処理温度、原料ガス比、減圧程度を適宜に変えることにより、表２に示すようなウエハ当接部の表面粗さ及びウエハ当接部以外の表面粗さのウエハボートを得た。
(Comparative Example 2)
In Comparative Example 1, the first SiC coating film was formed, and then the wafer contact portion was polished so that Ra was 0.01 μm, which was referred to as Comparative Example 2.
(Comparative Example 3 to Comparative Example 5)
In Comparative Examples 3 to 5, when the same treatment as in Example 1 was performed to form the second SiC coating film, among the conditions of the CVD method, the processing temperature, the raw material gas ratio, and the reduced pressure were appropriately changed. Thus, a wafer boat having the surface roughness of the wafer contact portion and the surface roughness other than the wafer contact portion as shown in Table 2 was obtained.
そして、実施例１〜５、比較例１〜５にかかる６インチウエハボートの溝部の全てにウエハを載置し、これをＬＰ−ＣＶＤ装置内に配置し、ＳｉＮ膜を１０μｍ積層させた後、ウエハボートをＬＰ−ＣＶＤ装置から取り出し、このウエハボートの最上部、センター部、最低部に載置されていた３枚のウエハ上の０．３μｍ以上のパーティクル数をカウントし、これらのパーティクル数の１枚当たりの平均値を算出した。その結果を表３に示す。 And after mounting a wafer in all the groove parts of the 6-inch wafer boat concerning Examples 1-5 and Comparative Examples 1-5, this is arrange | positioned in LP-CVD apparatus, and 10 micrometer of SiN films were laminated | stacked, The wafer boat is taken out from the LP-CVD apparatus, and the number of particles of 0.3 μm or more on the three wafers placed on the top, center and bottom of the wafer boat is counted. The average value per sheet was calculated. The results are shown in Table 3.
表３に示されるように、実施例１〜５にかかる６インチウエハボートにあっては、パーティクル汚染を抑制できることが確認できた。また、いずれの実施例のものも、パーティクル数を測定したウエハいずれの表面にもスリップが確認されなかった。 As shown in Table 3, in the 6-inch wafer boat according to Examples 1 to 5, it was confirmed that particle contamination can be suppressed. In any of the examples, no slip was observed on the surface of any wafer whose number of particles was measured.
１ 縦型ウエハボート（縦型ウエハボート）
２ 支柱
２ａ 棚部
２ａ１ ウエハ載置部
２ａ２ 先端面取り部（隣接部）
２ａ３ 側部面取り部（隣接部）
２ｂ ウエハ挿入側側面
２ｂ１ ウエハ挿入側側面の下側部
３ 天板
４ 底板
Ａ 第１のＳｉＣ被覆膜
Ｂ 第２のＳｉＣ被覆膜
1 Vertical wafer boat (Vertical wafer boat)
2
2a3 Side chamfered part (adjacent part)
2b Wafer insertion side side surface 2b1 Lower side portion 3 of wafer insertion
Claims (1)
前記棚部におけるウエハ当接部が第１のＳｉＣ被膜形成後に研磨によるフラット化処理を行い、その上面に第２のＳｉＣ被膜が形成され、かつその表面の表面粗さＲａが０．１μｍ以上０．９μｍ以下であって、
前記ウエハ当接部を除く部分が、第１のＳｉＣ被膜形成後にその上面に第２のＳｉＣ膜が形成され、かつその表面粗さＲａが１．０μｍ以上８．０μｍ以下であることを特徴とする縦型ウエハボート。 A SiC coating film is formed on the surface of the SiC base material, which includes a plurality of pillars on which shelves for mounting a wafer are formed, and top and bottom plates for fixing upper and lower ends of the pillars. In vertical wafer boats
The wafer contact portion in the shelf performs a flattening process by polishing after the first SiC film is formed, the second SiC film is formed on the upper surface, and the surface roughness Ra of the surface is 0.1 μm or more 0 .9 μm or less,
The portion excluding the wafer contact portion has a second SiC film formed on the upper surface after the first SiC film is formed, and the surface roughness Ra is 1.0 μm or more and 8.0 μm or less. A vertical wafer boat.
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| JP7030604B2 (en) | 2018-04-19 | 2022-03-07 | 三菱電機株式会社 | Wafer boat and its manufacturing method |
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| CN116516468A (en) * | 2023-07-04 | 2023-08-01 | 苏州优晶光电科技有限公司 | Device and method for simultaneously treating multiple silicon carbide seed crystal coatings |
| CN116516468B (en) * | 2023-07-04 | 2023-10-13 | 苏州优晶光电科技有限公司 | Device and method for simultaneously treating multiple silicon carbide seed crystal coatings |
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